TWI777288B - Plasma processing equipment and its gas baffle structure, plasma processing method - Google Patents

Plasma processing equipment and its gas baffle structure, plasma processing method Download PDF

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TWI777288B
TWI777288B TW109139228A TW109139228A TWI777288B TW I777288 B TWI777288 B TW I777288B TW 109139228 A TW109139228 A TW 109139228A TW 109139228 A TW109139228 A TW 109139228A TW I777288 B TWI777288 B TW I777288B
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gas
gas inlet
cavity
substrate
cavities
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TW202123284A (en
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魏強
興才 蘇
楊金全
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大陸商中微半導體設備（上海）股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

本發明實施例公開了一種等離子體處理設備及其氣體擋板結構、等離子體處理方法。氣體擋板結構包含第一基板和設置在第一基板第一表面的複數個間隔件。第一基板和複數個間隔件形成複數個氣體腔。複數個氣體腔包括中心腔和環繞中心腔的至少一個環形腔。至少一個環形腔包括至少兩個第一氣體腔。各第一氣體腔分別對應一個第一入氣通路。各第一入氣通路獨立控制，從而使得各第一氣體腔對應的第一入氣通路中通入的第一氣體流量獨立控制，進而在蝕刻過程中，可以基於待處理晶圓表面的蝕刻需求和蝕刻情況，單獨控制環形腔中的各第一氣體腔中通入的氣體流量，以調節距離待處理晶圓中心同一距離不同位置處的蝕刻速率，改善待處理晶圓表面距離其中心同一距離不同位置處的蝕刻不均勻現象。The embodiment of the present invention discloses a plasma processing device, a gas baffle structure thereof, and a plasma processing method. The gas baffle structure includes a first substrate and a plurality of spacers disposed on the first surface of the first substrate. The first substrate and the plurality of spacers form a plurality of gas cavities. The plurality of gas cavities include a central cavity and at least one annular cavity surrounding the central cavity. At least one annular cavity includes at least two first gas cavities. Each of the first gas chambers corresponds to a first gas inlet passage respectively. Each first gas inlet channel is independently controlled, so that the flow rate of the first gas introduced into the first gas inlet channel corresponding to each first gas chamber is independently controlled, and then during the etching process, it can be based on the etching requirements of the wafer surface to be processed. and etching conditions, individually control the gas flow rate introduced into each first gas chamber in the annular cavity to adjust the etching rate at different positions at the same distance from the center of the wafer to be processed, and improve the distance between the surface of the wafer to be processed and the center of the same distance. Etching non-uniformity at different locations.

Description

等離子體處理設備及其氣體擋板結構、等離子體處理方法Plasma processing equipment and its gas baffle structure, plasma processing method

本發明涉及等離子體處理的技術領域，尤其涉及一種氣體擋板結構、等離子體處理設備及等離子體處理方法。The present invention relates to the technical field of plasma processing, in particular to a gas baffle structure, plasma processing equipment and plasma processing method.

隨著等離子體處理技術的不斷發展，使得應用該技術的等離子體處理設備也不斷的改進，現已研發出來幾種等離子體處理設備，如電容耦合等離子體(即Capacitively Coupled Plasma，CCP)處理設備、電感耦合等離子體（Inductively Coupled Plasma，ICP）處理設備以及電子迴旋共振等離子體（Electron Cyclotron Resonance，ECR）處理設備。然而目前的等離子體處理設備在蝕刻過程中，距離待處理晶圓中心同一距離不同位置處經常會出現蝕刻不均勻的問題。With the continuous development of plasma processing technology, the plasma processing equipment applying this technology has been continuously improved. Several plasma processing equipments have been developed, such as Capacitively Coupled Plasma (CCP) processing equipment. , Inductively Coupled Plasma (ICP) processing equipment and Electron Cyclotron Resonance (ECR) processing equipment. However, during the etching process of the current plasma processing equipment, uneven etching often occurs at different positions at the same distance from the center of the wafer to be processed.

為解決上述技術問題，本發明實施例提供了一種氣體擋板結構，以降低等離子體處理設備在蝕刻過程中，提高待處理晶圓表面距離其中心同一距離不同位置處的蝕刻均勻度，改善待處理晶圓表面距離其中心同一距離不同位置處的蝕刻不均勻現象。In order to solve the above technical problems, the embodiment of the present invention provides a gas baffle structure, so as to reduce the etching process of the plasma processing equipment, improve the etching uniformity of the wafer surface to be processed at different positions at the same distance from the center, and improve the etching uniformity of the wafer to be processed. Etching non-uniformity at different positions of the wafer surface at the same distance from its center.

為解決上述問題，本發明實施例提供了如下技術方案： 一種等離子體處理設備的氣體擋板結構，包括： 第一基板和設置在所述第一基板第一表面的複數個間隔件，所述第一基板和所述複數個間隔件形成複數個氣體腔，所述複數個氣體腔包括中心腔和環繞所述中心腔的至少一個環形腔，所述至少一個環形腔中至少一個環形腔包括至少兩個第一氣體腔； 其中，所述第一基板中具有貫穿所述第一基板的至少兩個第一入氣通路，所述第一入氣通路與所述第一氣體腔一一對應，且與其對應的第一氣體腔相連通，所述第一入氣通路用於通入第一氣體，且各所述第一入氣通路獨立控制。In order to solve the above problems, the embodiments of the present invention provide the following technical solutions: A gas baffle structure for plasma processing equipment, comprising: A first substrate and a plurality of spacers disposed on the first surface of the first substrate, the first substrate and the plurality of spacers form a plurality of gas cavities, and the plurality of gas cavities include a central cavity and a surrounding at least one annular cavity of the central cavity, at least one annular cavity in the at least one annular cavity includes at least two first gas cavities; Wherein, the first substrate has at least two first gas inlet passages penetrating through the first substrate, the first gas inlet passages are in one-to-one correspondence with the first gas chambers, and the corresponding first gas The cavities are communicated with each other, the first gas inlet passage is used for introducing a first gas, and each of the first gas inlet passages is independently controlled.

較佳的，所述至少一個環形腔包括複數個環形腔，不同所述環形腔中包括的第一氣體腔的數量相同或不同。Preferably, the at least one annular cavity includes a plurality of annular cavities, and the number of the first gas cavities included in different annular cavities is the same or different.

較佳的，如果不同所述環形腔中包括的第一氣體腔的數量不同，所述複數個環形腔中至少一個環形腔包括一個第一氣體腔。Preferably, if the number of first gas cavities included in different annular cavities is different, at least one annular cavity among the plurality of annular cavities includes one first gas cavity.

較佳的，如果不同所述環形腔中包括的第一氣體腔的數量不同，所述複數個環形腔中至少兩個環形腔包括複數個第一氣體腔，且不同所述環形腔中對應的複數個第一氣體腔的數量不同。Preferably, if the number of the first gas cavities included in the different annular cavities is different, at least two annular cavities in the plurality of annular cavities include a plurality of first gas cavities, and the corresponding annular cavities are different from each other. The number of the plurality of first gas cavities is different.

較佳的，所述第一基板中還具有貫穿所述第一基板的至少兩個第二入氣通路，所述第二入氣通路與所述第一氣體腔一一對應，且與其對應的第一氣體腔相連通；其中，所述第二入氣通路用於通入所述第二氣體，所述第一氣體和所述第二氣體的成分不同。Preferably, the first substrate further has at least two second gas inlet passages penetrating through the first substrate, and the second gas inlet passages are in one-to-one correspondence with the first gas chambers, and are corresponding to the first gas chambers. The first gas chambers are connected; wherein, the second gas inlet passage is used for introducing the second gas, and the first gas and the second gas have different compositions.

較佳的，所述第一入氣通路具有至少一個第一入氣孔，並通過所述第一入氣孔與其對應的第一氣體腔相連通； 所述第二入氣通路具有至少一個第二入氣孔，並通過所述第二入氣孔與其對應的第一氣體腔相連通。Preferably, the first gas inlet passage has at least one first gas inlet hole, and is communicated with its corresponding first gas cavity through the first gas inlet hole; The second gas inlet passage has at least one second gas inlet hole, and is communicated with its corresponding first gas cavity through the second gas inlet hole.

較佳的，所述第一入氣通路具有至少兩個所述第一入氣孔，所述第二入氣通路具有至少兩個所述第二入氣孔，所述第一入氣孔與所述第二入氣孔沿所述環形腔的環形方向間隔排布。Preferably, the first air inlet passage has at least two first air inlet holes, the second air inlet passage has at least two second air inlet holes, and the first air inlet hole is connected to the second air inlet hole. The two air inlet holes are arranged at intervals along the annular direction of the annular cavity.

較佳的，所述中心腔為一個中心氣體腔，所述第一基板中還具有貫穿所述第一基板的第一中心入氣通路，所述第一中心入氣通路與所述中心氣體腔相連通，用於通入第一氣體，且所述第一中心入氣通路和所述第一入氣通路獨立控制。Preferably, the central cavity is a central gas cavity, the first substrate further has a first central gas inlet passage through the first substrate, the first central gas inlet passage and the central gas cavity are communicated with each other for introducing the first gas, and the first central gas inlet passage and the first gas inlet passage are independently controlled.

較佳的，所述第一基板中還具有貫穿所述第一基板的第二中心入氣通路，所述第二中心入氣通路與所述中心氣體腔相連通，其中，所述第二中心入氣通路用於通入所述第二氣體，且所述第二中心入氣通路與所述第二入氣通路獨立控制。Preferably, the first substrate further has a second central gas inlet passage through the first substrate, the second central gas inlet passage is communicated with the central gas cavity, wherein the second central gas inlet The gas inlet passage is used for introducing the second gas, and the second central gas inlet passage and the second gas inlet passage are independently controlled.

較佳的，還包括位於所述間隔件背離所述第一基板一側的第二基板，所述第二基板中具有複數個第一出氣孔，所述第一出氣孔與其對應的所述氣體腔相連通。Preferably, it also includes a second substrate located on the side of the spacer away from the first substrate, the second substrate has a plurality of first air outlets, and the first air outlets are corresponding to the gas. cavity is connected.

一種等離子體處理設備，其中，包括： 腔體，所述腔體具有開口； 位於所述腔體開口處的氣體擋板結構，所述氣體擋板結構與所述腔體組成的空間為等離子體處理設備的反應腔，所述氣體擋板結構為上述的氣體擋板結構； 位於所述反應腔內，且位於所述氣體擋板結構下方的氣體噴淋頭，所述氣體噴淋頭上具有複數個第二出氣孔，所述第二出氣孔用於連通所述氣體腔和所述反應腔；以及 位於所述反應腔內，與所述氣體噴淋頭相對設置的基台，所述基台用於放置晶圓； 其中，所述第一入氣通路通入的第一氣體用於對所述晶圓進行處理。A plasma processing equipment, comprising: a cavity, the cavity has an opening; a gas baffle structure located at the opening of the cavity, the space formed by the gas baffle structure and the cavity is a reaction chamber of the plasma processing equipment, and the gas baffle structure is the above-mentioned gas baffle structure; A gas shower head located in the reaction chamber and below the gas baffle structure, the gas shower head is provided with a plurality of second gas outlets, and the second gas outlets are used to communicate the gas chamber and the gas chamber. the reaction chamber; and a base located in the reaction chamber and opposite to the gas shower head, the base is used for placing wafers; Wherein, the first gas introduced into the first gas inlet passage is used for processing the wafer.

較佳的，所述等離子體處理設備還包括： 與所述第一入氣通路一一對應的第一控制元件，所述第一控制元件用於控制通過所述第一入氣通路進入所述第一氣體腔的氣體流量。Preferably, the plasma processing equipment further includes: and a first control element corresponding to the first gas inlet passage one-to-one, and the first control element is used to control the flow rate of gas entering the first gas chamber through the first gas inlet passage.

較佳的，如果所述第一基板中還具有貫穿所述第一基板的至少兩個第二入氣通路，所述等離子體處理設備還包括：與所述第二入氣通路一一對應的第二控制元件，所述第二控制元件用於控制通過所述第二入氣通路進入所述第一氣體腔的氣體流量。Preferably, if the first substrate further has at least two second gas inlet passages penetrating the first substrate, the plasma processing equipment further comprises: one-to-one correspondence with the second gas inlet passages. A second control element, the second control element is used for controlling the gas flow rate entering the first gas chamber through the second gas inlet passage.

一種等離子體處理方法，其中，應用於上述的等離子體處理設備，所述等離子體處理方法包括： 將待處理晶圓放置在基台上； 向所述第一基板中的各第一入氣通路充入第一氣體；以及 控制各所述第一入氣通路中通入的氣體流量，以控制所述晶圓第一表面的蝕刻速率； 其中，各所述第一氣體腔中通入的所述第一氣體的流量不同。A plasma processing method, wherein, applied to the above-mentioned plasma processing equipment, the plasma processing method comprises: placing the wafer to be processed on the base; Filling the first gas into each of the first gas inlet passages in the first substrate; and controlling the flow rate of gas introduced into each of the first gas inlet passages to control the etching rate of the first surface of the wafer; Wherein, the flow rate of the first gas introduced into each of the first gas chambers is different.

較佳的，如果所述第一基板中還具有貫穿所述第一基板的至少兩個第二入氣通路，該等離子體處理方法還包括： 向所述第一基板中的第二入氣通路充入所述第二氣體； 通過控制各所述第二入氣通路中的氣體流量，控制所述晶圓第一表面的蝕刻速率。Preferably, if the first substrate further has at least two second gas inlet passages penetrating the first substrate, the plasma processing method further includes: filling the second gas into the second gas inlet passage in the first substrate; By controlling the gas flow in each of the second gas inlet passages, the etching rate of the first surface of the wafer is controlled.

與習知技術相比，上述技術方案具有以下優點： 本發明實施例所提供的等離子體處理設備的氣體擋板結構中，所述至少一個環形腔中至少一個環形腔包括至少兩個第一氣體腔，各所述第一氣體腔分別對應一個第一入氣通路，且各所述第一入氣通路獨立控制，從而使得各所述第一氣體腔對應的第一入氣通路中通入的第一氣體流量獨立控制。因此，在應用於蝕刻時，基於待處理晶圓表面的蝕刻需求和蝕刻情況，單獨控制所述環形腔中的各第一氣體腔通入的氣體流量，以調節距離所述待處理晶圓中心同一距離不同位置處的蝕刻速率，使得所述待處理晶圓表面距離其中心同一距離不同位置處的蝕刻速率較為均衡，進而提高待處理晶圓表面距離其中心同一距離不同位置處的蝕刻均勻度，改善待處理晶圓表面距離其中心同一距離不同位置處的蝕刻不均勻現象。Compared with the prior art, the above technical solution has the following advantages: In the gas baffle structure of the plasma processing apparatus provided by the embodiment of the present invention, at least one annular cavity in the at least one annular cavity includes at least two first gas cavities, and each of the first gas cavities corresponds to one first gas cavity respectively. An air inlet passage is provided, and each of the first air inlet passages is independently controlled, so that the flow rate of the first gas introduced into the first air inlet passage corresponding to each of the first gas chambers is independently controlled. Therefore, when applied to etching, based on the etching requirements and etching conditions of the surface of the wafer to be processed, the gas flow rate introduced into each of the first gas chambers in the annular cavity is individually controlled to adjust the distance from the center of the wafer to be processed. The etching rates at different positions at the same distance make the etching rates at different positions at the same distance from the center of the wafer surface to be processed more balanced, thereby improving the etching uniformity at different positions at the same distance from the center of the wafer surface to be processed , to improve the uneven etching of the surface of the wafer to be processed at the same distance from its center at different positions.

下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述，顯然，所描述的實施例僅僅是本發明一部分實施例，而不是全部的實施例。基於本發明中的實施例，所屬技術領域中具有通常知識者在沒有做出具進步性的改變前提下所獲得的所有其他實施例，都屬於本發明保護的範圍。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those with ordinary knowledge in the technical field without making progressive changes shall fall within the protection scope of the present invention.

在下面的描述中闡述了很多具體細節以便於充分理解本發明，但是本發明還可以採用其他不同於在此描述的其它方式來實施，所屬技術領域中具有通常知識者可以在不違背本發明內涵的情況下做類似推廣，因此本發明不受下面公開的具體實施例的限制。Many specific details are set forth in the following description to facilitate a full understanding of the present invention, but the present invention can also be implemented in other ways different from those described herein, and those with ordinary knowledge in the art can do so without departing from the connotation of the present invention. In the case of similar promotion, the present invention is not limited by the specific embodiments disclosed below.

正如背景技術部分所述，目前的等離子體處理設備在蝕刻過程中，距離待處理晶圓中心同一距離不同位置處經常會出現蝕刻不均勻的問題。As mentioned in the Background Art, during the etching process of the current plasma processing equipment, the problem of uneven etching often occurs at different positions at the same distance from the center of the wafer to be processed.

研究發現，在蝕刻過程中，等離子體處理設備的射頻場的分佈不均勻或是噴淋頭的排氣孔噴出的氣體不均勻都會導致在蝕刻過程中整個蝕刻區域出現蝕刻不均勻的現象，例如，沿整個蝕刻區域與基台平行的Y軸或X軸會出現中間蝕刻區域的蝕刻速率高，兩邊蝕刻區域的蝕刻速率低，即蝕刻速率曲線為V型，或是中間的蝕刻速率低，兩邊的蝕刻速率高，即蝕刻速率曲線為倒V型，或是，中間和兩邊的蝕刻速率低，位於中間和兩邊中間的蝕刻速率高，即蝕刻速率曲線為M型，或是，中間和兩邊的蝕刻速率高，位於中間和兩邊之間的蝕刻速率低，即蝕刻速率曲線為W型。The study found that during the etching process, the uneven distribution of the radio frequency field of the plasma processing equipment or the uneven gas ejected from the exhaust hole of the shower head will cause uneven etching in the entire etching area during the etching process, such as , along the Y-axis or X-axis parallel to the base of the entire etching area, the etching rate of the middle etching area will be high, and the etching rate of the etching area on both sides will be low, that is, the etching rate curve is V-shaped, or the etching rate in the middle is low. The etching rate is high, that is, the etching rate curve is an inverted V-shaped, or, the etching rate in the middle and both sides is low, and the etching rate in the middle and the middle of the two sides is high, that is, the etching rate curve is M-type, or, the middle and both sides are The etching rate is high, and the etching rate between the middle and the two sides is low, that is, the etching rate curve is W-shaped.

針對上述這些情況，常將氣體擋板結構分割成中心腔和環繞所述中心腔的至少一個環形腔，每個環形腔可單獨控制其通入的製程氣體的流量。因此，在蝕刻過程中，基於待處理晶圓表面的蝕刻需求和蝕刻情況，可通過調節不同環形腔的氣體流量，以調節沿同一方向距離所述待處理晶圓中心不同距離處的蝕刻速率，進而提高所述待處理晶圓表面沿同一方向距離其中心不同距離處的蝕刻均勻度，然而這種結構無法解決距離待處理晶圓中心同一距離不同位置處經常會出現蝕刻不均勻的問題。In view of the above situations, the gas baffle structure is often divided into a central cavity and at least one annular cavity surrounding the central cavity, and each annular cavity can independently control the flow rate of the process gas introduced into it. Therefore, in the etching process, based on the etching requirements and etching conditions of the surface of the wafer to be processed, the gas flow rate of different annular cavities can be adjusted to adjust the etching rate at different distances from the center of the wafer to be processed along the same direction, Further, the etching uniformity of the surface of the wafer to be processed at different distances from the center along the same direction can be improved. However, this structure cannot solve the problem that uneven etching often occurs at different positions at the same distance from the center of the wafer to be processed.

鑒於此，本發明實施例提供了一種等離子體處理設備的氣體擋板結構，如圖1、圖2和圖3所示，該氣體擋板結構包括： 第一基板100和設置在所述第一基板100第一表面的複數個間隔件200，所述第一基板100和所述複數個間隔200件形成複數個氣體腔300，所述複數個氣體腔300包括中心腔301和環繞所述中心腔301的至少一個環形腔302，所述至少一個環形腔302中至少一個環形腔302包括至少兩個第一氣體腔3021； 其中，所述第一基板100中具有貫穿所述第一基板100的至少兩個第一入氣通路400，所述第一入氣通路400與所述第一氣體腔3021一一對應，且第一入氣通路400與其對應的第一氣體腔3021相連通，所述第一入氣通路400用於通入第一氣體，且各所述第一入氣通路400為獨立控制。In view of this, an embodiment of the present invention provides a gas baffle structure of a plasma processing apparatus, as shown in FIG. 1 , FIG. 2 and FIG. 3 , the gas baffle structure includes: The first substrate 100 and a plurality of spacers 200 disposed on the first surface of the first substrate 100, the first substrate 100 and the plurality of spacers 200 form a plurality of gas cavities 300, and the plurality of gas cavities 300 includes a central cavity 301 and at least one annular cavity 302 surrounding the central cavity 301, and at least one annular cavity 302 of the at least one annular cavity 302 includes at least two first gas cavities 3021; The first substrate 100 has at least two first gas inlet passages 400 penetrating through the first substrate 100 , the first gas inlet passages 400 correspond to the first gas chambers 3021 one-to-one, and the first gas inlet passages 400 A gas inlet passage 400 communicates with its corresponding first gas cavity 3021 , the first gas inlet passage 400 is used for introducing a first gas, and each of the first gas inlet passages 400 is controlled independently.

較佳的，在本發明實施例中，各所述第一氣體腔3021沿所述環形腔302的軸向分佈，即各所述第一氣體腔3021距離所述中心腔301的距離相同。Preferably, in the embodiment of the present invention, the first gas cavities 3021 are distributed along the axial direction of the annular cavity 302 , that is, the distances between the first gas cavities 3021 and the central cavity 301 are the same.

在上述任一實施例的基礎上，在本發明的一個實施例中，所述氣體擋板結構為鋁合金的氣體擋板結構，在本發明的其他實施例中，所述氣體擋板結構還可以為其他材質的氣體擋板結構，本發明對此不做限定，具體視情況而定。On the basis of any of the above embodiments, in one embodiment of the present invention, the gas baffle structure is an aluminum alloy gas baffle structure, and in other embodiments of the present invention, the gas baffle structure is further The gas baffle structure of other materials can be used, which is not limited in the present invention, and depends on the specific situation.

需要說明的是，繼續如圖1所示，所述間隔件200背離所述第一基板100一側上還設置有密封圈500，以防止各氣體腔300的氣體洩漏，影響各氣體腔300內氣體的含量，進而影響蝕刻速率。It should be noted that, continuing as shown in FIG. 1 , a sealing ring 500 is further provided on the side of the spacer 200 away from the first substrate 100 to prevent gas leakage in each gas cavity 300 and affect the inside of each gas cavity 300 The content of the gas, which in turn affects the etch rate.

本發明實施例所提供的等離子體處理設備的氣體擋板結構中，所述氣體擋板包括複數個氣體腔300，所述複數個氣體腔300包括中心腔301和環繞所述中心腔301的至少一個環形腔302，所述至少一個環形腔302中至少一個環形腔302包括至少兩個第一氣體腔3021，各所述第一氣體腔3021分別對應一個第一入氣通路400，各所述第一入氣通路400為獨立控制，從而使得各所述第一氣體腔3021對應的第一入氣通路400中通入的第一氣體流量獨立控制。因此，在蝕刻過程中，可以基於待處理晶圓表面的蝕刻需求和蝕刻情況，單獨控制所述環形腔302中的各第一氣體腔3021通入的氣體流量，以調節距離所述待處理晶圓中心同一距離不同位置處的蝕刻速率，使得所述待處理晶圓表面距離其中心同一距離不同位置處的蝕刻速率較為均衡，進而提高待處理晶圓表面距離其中心同一距離不同位置處的蝕刻均勻度，改善待處理晶圓表面距離其中心同一距離不同位置處的蝕刻不均勻現象。In the gas baffle structure of the plasma processing apparatus provided by the embodiment of the present invention, the gas baffle includes a plurality of gas cavities 300 , and the plurality of gas cavities 300 include a central cavity 301 and at least a plurality of gas cavities surrounding the central cavity 301 . An annular cavity 302, at least one annular cavity 302 in the at least one annular cavity 302 includes at least two first gas cavities 3021, each of the first gas cavities 3021 respectively corresponds to a first gas inlet passage 400, each of the first gas cavities 3021 An air inlet passage 400 is independently controlled, so that the flow rate of the first gas introduced into the first air inlet passage 400 corresponding to each of the first gas chambers 3021 is independently controlled. Therefore, during the etching process, the gas flow rate of each first gas cavity 3021 in the annular cavity 302 can be individually controlled based on the etching requirements and etching conditions of the surface of the wafer to be processed, so as to adjust the distance from the wafer to be processed. The etching rates at different positions at the same distance from the center of the circle make the etching rates at different positions at the same distance from the center of the wafer to be processed more balanced, thereby improving the etching rate at different positions at the same distance from the center of the wafer to be processed. Uniformity, improve the uneven etching of the wafer surface to be processed at the same distance from its center at different positions.

需要說明的是，在本發明實施例中，所述第一氣體為製程氣體，由於蝕刻物件的不同，第一氣體的種類也不相同，具體的，在本發明的一個實施例中，所述第一氣體可以為碳氟類氣體Cx Fy 、Ar、N2 、O2 、H2 和CO2 中至少一種或至少兩種的任意組合，本發明對此不做限定，具體視情況而定。It should be noted that, in the embodiment of the present invention, the first gas is a process gas, and the type of the first gas is also different due to different etching objects. Specifically, in an embodiment of the present invention, the The first gas may be at least one or any combination of at least two of the fluorocarbon gases C x F y , Ar, N 2 , O 2 , H 2 and CO 2 , which is not limited in the present invention, and depends on the situation. Certainly.

還需要說明的是，在本發明實施例中，所述氣體流量可以為氣體的品質流量，也可以為氣體的體積流量，對此本發明並不做限定，具體視情況而定。It should also be noted that, in the embodiment of the present invention, the gas flow rate may be the mass flow rate of the gas or the volume flow rate of the gas, which is not limited in the present invention, and depends on the situation.

下面以氣體流量為氣體的品質流量為例進行描述。The following description takes the gas flow as the mass flow of the gas as an example.

在上述任一實施例的基礎上，在本發明的一個實施例中，所述第一入氣通路400具有至少一個第一入氣孔401，通過所述第一入氣孔401與所述第一氣體腔3021相連通。需要說明的是，為了提高通入到所述第一氣體腔3021中不同位置處的第一氣體量的均勻度，在上述實施例的基礎上，在本發明的一個實施例中，繼續如圖2所示，所述第一入氣通路400具有至少兩個第一入氣孔401，通過所述第一入氣孔401與所述第一氣體腔3021相連通，較佳的，所述至少兩個第一入氣孔401在所述第一氣體腔3021的表面均勻分佈。需要說明的是，本發明對所述第一氣體腔3021對應的第一入氣孔401的數量並不做限定，所述第一氣體腔3021對應的第一入氣孔401的數量越多，通入到所述第一氣體腔3021中不同位置處的第一氣體量越均勻。On the basis of any of the above embodiments, in an embodiment of the present invention, the first gas inlet passage 400 has at least one first gas inlet hole 401 , through which the first gas inlet hole 401 and the first gas The cavity 3021 is communicated. It should be noted that, in order to improve the uniformity of the amount of the first gas introduced into the first gas chamber 3021 at different positions, on the basis of the above-mentioned embodiment, in an embodiment of the present invention, continue as shown in FIG. 2, the first gas inlet passage 400 has at least two first gas inlet holes 401, which are communicated with the first gas cavity 3021 through the first gas inlet holes 401. Preferably, the at least two gas inlet holes 401 communicate with the first gas cavity 3021. The first air inlet holes 401 are evenly distributed on the surface of the first air cavity 3021 . It should be noted that the present invention does not limit the number of the first air inlet holes 401 corresponding to the first gas cavity 3021. The more the number of the first air inlet holes 401 corresponding to the first gas cavity 3021 The more uniform the amount of the first gas at different positions in the first gas chamber 3021 is.

在上述任一實施例的基礎上，在本發明的一個實施例中，所述第一入氣通路400可以為直的入氣通路，即所述第一入氣通路400的氣體輸送路徑為直線；在本發明的另一實施例中，所述第一入氣通路400的還可以為彎折的入氣通路，即所述第一入氣通路400中的氣體輸送路徑為非直線，本發明對此不做限定，具體視情況而定。On the basis of any of the above embodiments, in an embodiment of the present invention, the first gas inlet passage 400 may be a straight gas inlet passage, that is, the gas conveying path of the first gas inlet passage 400 is a straight line ; In another embodiment of the present invention, the first gas inlet passage 400 can also be a bent gas inlet passage, that is, the gas conveying path in the first gas inlet passage 400 is non-linear, the present invention There is no restriction on this, and it depends on the situation.

需要說明的是，如果所述第一入氣通路400的氣體輸送路徑為直線時，則所述第一入氣通路400中遠離所述第一入氣孔401的一端位於所述第一氣體腔3021的正上方；如果所述第一入氣通路400中的氣體輸送路徑為非直線（如曲線或折線）時，則所述第一入氣通路400中遠離所述第一入氣孔401的一端可以不位於其對應的所述第一氣體腔3021的正上方，本發明對此不限定，只要保證所述第一入氣通路400能夠將製程氣體通入到其對應的第一入氣孔401即可，具體視情況而定。It should be noted that, if the gas conveying path of the first gas inlet passage 400 is a straight line, the end of the first gas inlet passage 400 away from the first gas inlet hole 401 is located in the first gas cavity 3021 Just above the gas inlet passage 400; if the gas transport path in the first gas inlet passage 400 is non-linear (such as a curve or a broken line), the end of the first gas inlet passage 400 away from the first gas inlet hole 401 can be It is not located directly above the corresponding first gas cavity 3021, which is not limited in the present invention, as long as it is ensured that the first gas inlet passage 400 can pass the process gas into its corresponding first gas inlet hole 401. , depending on the situation.

在上述任一實施例的基礎上，在本發明的一個實施例中，所述複數個氣體腔300包括中心腔和301環繞所述中心腔301的兩個環形腔302，所述兩個環形腔302中至少一個環形腔302包括至少兩個第一氣體腔3021。On the basis of any of the above embodiments, in an embodiment of the present invention, the plurality of gas cavities 300 include a central cavity and 301 two annular cavities 302 surrounding the central cavity 301. The two annular cavities 301 At least one annular cavity 302 in 302 includes at least two first gas cavities 3021 .

在本發明的另一個實施例中，所述複數個氣體腔300包括中心腔301和環繞所述中心腔301的複數個環形腔302，所述複數個環形腔302中至少兩個環形腔302包括至少兩個第一氣體腔3021，較佳地，在一個實施例中，所述複數個環形腔302中至少兩個環形腔302包括至少三個第一氣體腔3021，以進一步提高基於待處理晶圓表面的蝕刻需求和蝕刻情況，單獨控制同一環形腔302所包括的各個第一氣體腔3021通入的氣體流量，以調節距離所述待處理晶圓中心同一距離複數個不同位置處的蝕刻速率的精確度，使得所述待處理晶圓表面距離其中心同一距離複數個不同位置處的蝕刻速率更為均衡，進一步提高待處理晶圓表面距離其中心同一距離不同位置處的蝕刻均勻度。In another embodiment of the present invention, the plurality of gas cavities 300 include a central cavity 301 and a plurality of annular cavities 302 surrounding the central cavity 301, and at least two annular cavities 302 of the plurality of annular cavities 302 include At least two first gas cavities 3021, preferably, in one embodiment, at least two annular cavities 302 of the plurality of annular cavities 302 include at least three first gas cavities 3021, so as to further improve the performance of the For the etching requirements and etching conditions of the round surface, the gas flow rate of each first gas chamber 3021 included in the same annular chamber 302 is individually controlled to adjust the etching rate at a plurality of different positions at the same distance from the center of the wafer to be processed. This makes the etching rate at the same distance from the center of the wafer to be processed more balanced at a plurality of different positions, and further improves the etching uniformity of the surface of the to-be-processed wafer at the same distance from its center.

需要說明的是，在本發明的實施例中所述中心腔301在預設平面內的投影為圓形，環繞所述中心腔301的複數個環形腔302在預設平面內的投影構成圓環形，所述中心腔301在所述預設平面內的投影的圓心與環繞所述中心腔301的複數個環形腔302在所述預設平面內的投影的圓心為同一圓心，其中，所述預設平面與所述第一基板100的第一表面平行。It should be noted that, in the embodiment of the present invention, the projection of the central cavity 301 on the preset plane is a circle, and the projections of the plurality of annular cavities 302 surrounding the central cavity 301 on the preset plane form a ring The center of the projection of the central cavity 301 in the preset plane is the same as the center of the projection of the plurality of annular cavities 302 surrounding the central cavity 301 in the preset plane, wherein the The predetermined plane is parallel to the first surface of the first substrate 100 .

在上述任一實施例的基礎上，在本發明的一個實施例中，所述至少一個環形腔302包括複數個環形腔302，不同所述環形腔302中包括的第一氣體腔3021的數量相同或不同。需要說明的是，本發明一個實施例中，所述不同所述環形腔302中包括的第一氣體腔3021的數量不同包括：所述不同所述環形腔302中包括的第一氣體腔3021的數量完全不同，在本發明的另一個實施例中，所述不同所述環形腔302中包括的第一氣體腔3021的數量不同包括：所述不同所述環形腔302中包括的第一氣體腔3021的數量不完全相同，對此本發明並不做限定，具體視情況而定。On the basis of any of the above embodiments, in an embodiment of the present invention, the at least one annular cavity 302 includes a plurality of annular cavities 302 , and the number of first gas cavities 3021 included in different annular cavities 302 is the same or different. It should be noted that, in an embodiment of the present invention, the different numbers of the first gas cavities 3021 included in the different annular cavities 302 include: the number of the first gas cavities 3021 included in the different annular cavities 302 The numbers are completely different. In another embodiment of the present invention, the different numbers of the first gas cavities 3021 included in the different annular cavities 302 include: the first gas cavities included in the different annular cavities 302 The number of 3021 is not exactly the same, which is not limited in the present invention, and depends on the specific situation.

還需要說明的是，本發明實施例中所述複數個環形腔302包括至少兩個環形腔302。It should also be noted that, in the embodiment of the present invention, the plurality of annular cavities 302 include at least two annular cavities 302 .

在上述任一實施例的基礎上，在本發明的一個實施例中，如果不同所述環形腔302中包括的第一氣體腔3021的數量不同，所述複數個環形腔302中至少一個環形腔302包括一個第一氣體腔3021。On the basis of any of the above embodiments, in an embodiment of the present invention, if the number of the first gas cavities 3021 included in different annular cavities 302 is different, at least one annular cavity in the plurality of annular cavities 302 302 includes a first gas chamber 3021 .

在上述任一實施例的基礎上，在本發明的一個實施例中，如果不同所述環形腔302中包括的第一氣體腔3021的數量不同，所述複數個環形腔302中至少兩個環形腔302包括複數個第一氣體腔3021，且不同所述環形腔302中對應的複數個第一氣體腔3021的數量不同，本發明對此不做限定，具體視情況而定。On the basis of any of the above embodiments, in an embodiment of the present invention, if the number of the first gas cavities 3021 included in the annular cavities 302 is different, at least two annular cavities 302 in the plurality of annular cavities 302 The cavity 302 includes a plurality of first gas cavities 3021, and the number of the plurality of first gas cavities 3021 corresponding to different annular cavities 302 is different, which is not limited in the present invention, and depends on the situation.

具體的，繼續如圖2所示，在本發明的一個實施例中，所述複數個氣體腔包括一個中心腔301和環繞所述中心腔301的兩個環形腔302，所述兩個環形腔302中只有一個環形腔302包括複數個第一氣體腔3021，且該環形腔302包括四個第一氣體腔3021，另一個靠近中心腔301的環形腔302只包括一個第一氣體腔3021。Specifically, as shown in FIG. 2 , in an embodiment of the present invention, the plurality of gas cavities include a central cavity 301 and two annular cavities 302 surrounding the central cavity 301 . The two annular cavities Only one annular cavity 302 in 302 includes a plurality of first gas cavities 3021 , and the annular cavity 302 includes four first gas cavities 3021 , and the other annular cavity 302 close to the central cavity 301 includes only one first gas cavity 3021 .

如圖4所示，在本發明的另一個實施例中，所述複數個氣體腔300包括一個中心腔301和環繞所述中心腔301的三個環形腔302，所述三個環形腔302中有兩個環形腔302包括複數個第一氣體腔3021，且該兩個環形腔302中每個環形腔302均包括四個第一氣體腔3021。As shown in FIG. 4 , in another embodiment of the present invention, the plurality of gas cavities 300 include a central cavity 301 and three annular cavities 302 surrounding the central cavity 301 . There are two annular cavities 302 including a plurality of first gas cavities 3021 , and each annular cavity 302 of the two annular cavities 302 includes four first gas cavities 3021 .

如圖5所示，在本發明的又一個實施例中，所述複數個氣體腔300包括一個中心腔301和環繞所述中心腔301的三個環形腔302，所述三個環形腔302中三個環形腔302包括複數個第一氣體腔3021，且該兩個環形腔302中每個環形腔302包括八個第一氣體腔3021以及一個環形腔302包括四個第一氣體腔3021。As shown in FIG. 5 , in another embodiment of the present invention, the plurality of gas cavities 300 include a central cavity 301 and three annular cavities 302 surrounding the central cavity 301 . The three annular cavities 302 include a plurality of first gas cavities 3021 , and each annular cavity 302 of the two annular cavities 302 includes eight first gas cavities 3021 and one annular cavity 302 includes four first gas cavities 3021 .

在上述任一實施例的基礎上，在本發明的一個實施例中，每個環形腔302均被均勻分成複數個第一氣體腔3021，以便於單獨控制各環形腔302所在區域不同第一氣體腔3021通入的氣體流量，以調節距離所述待處理晶圓中心同一距離複數個不同位置處的蝕刻速率。On the basis of any of the above embodiments, in an embodiment of the present invention, each annular cavity 302 is evenly divided into a plurality of first gas cavities 3021, so as to individually control the different first gases in the region where each annular cavity 302 is located The flow rate of the gas introduced into the cavity 3021 is used to adjust the etching rate at a plurality of different positions at the same distance from the center of the wafer to be processed.

在上述任一實施例的基礎上，在本發明的一個實施例中，所述複數個環形腔302的寬度相同，即沿所述中心腔301至所述環形腔302方向，不同環形腔302的尺寸相同，在本發明的另一個實施例中，所述複數個環形腔302的寬度也可以不完全相同，對此本發明並不做限定，具體視情況而定。On the basis of any of the above embodiments, in an embodiment of the present invention, the widths of the plurality of annular cavities 302 are the same, that is, along the direction from the central cavity 301 to the annular cavity 302 , the widths of the annular cavities 302 are different. The dimensions are the same. In another embodiment of the present invention, the widths of the plurality of annular cavities 302 may not be exactly the same, which is not limited in the present invention, and depends on the specific situation.

在上述任一實施例的基礎上，在本發明的一個實施例中，繼續如圖1、圖2和圖3所示，所述中心腔301為一個中心氣體腔，所述第一基板100中還具有貫穿所述第一基板100的第一中心入氣通路600，所述第一中心入氣通路600與所述中心氣體腔相連通，用於通入第一氣體，且所述第一中心入氣通路600和所述第一入氣通路400為獨立控制，較佳的，在本發明的一個實施例中，所述第一中心入氣通路600具有至少一個第一中心入氣孔601，並通過所述第一中心入氣孔601與所述中心氣體腔相連通。但本發明對此並不做限定，在本發明的其他實施例中，所述中心腔301也可以包括至少兩個中心氣體腔，具體視情況而定。On the basis of any of the above embodiments, in an embodiment of the present invention, as shown in FIG. 1 , FIG. 2 and FIG. 3 , the central cavity 301 is a central gas cavity, and the first substrate 100 There is also a first central gas inlet passage 600 penetrating the first substrate 100, the first central gas inlet passage 600 is communicated with the central gas cavity, and is used for introducing a first gas, and the first central gas inlet passage 600 is connected with the central gas cavity. The air inlet passage 600 and the first air inlet passage 400 are controlled independently. Preferably, in an embodiment of the present invention, the first central air inlet passage 600 has at least one first central air inlet hole 601, and It communicates with the central gas cavity through the first central gas inlet hole 601 . However, the present invention is not limited to this. In other embodiments of the present invention, the central cavity 301 may also include at least two central gas cavities, depending on the situation.

在上述任一實施例的基礎上，在本發明的一個實施例中如圖6、圖7和圖8所示，所述第一基板100中還具有貫穿所述第一基板100的至少兩個第二入氣通路700，所述第二入氣通路700與所述第一氣體腔3021一一對應，且所述第二入氣通路700與其對應的第一氣體腔3021相連通；在本發明實施例中，所述第二入氣通路700用於通入第二氣體，所述第一氣體和所述第二氣體的成分不同，需要說明的是，在本發明的一個實施例中，所述第一氣體和所述第二氣體的成分不同包括所述第一氣體和所述第二氣體的成分不完全相同，在本發明的另一個實施例中，所述第一氣體和所述第二氣體的成分不同包括所述第一氣體和所述第二氣體的成分完全不同，對此本發明並不做限定，具體視情況而定。On the basis of any of the foregoing embodiments, in an embodiment of the present invention, as shown in FIG. 6 , FIG. 7 and FIG. 8 , the first substrate 100 further has at least two penetrating through the first substrate 100 . The second gas inlet passage 700, the second gas inlet passage 700 corresponds to the first gas cavity 3021 one-to-one, and the second gas inlet passage 700 is communicated with the corresponding first gas cavity 3021; in the present invention In the embodiment, the second gas inlet passage 700 is used to introduce a second gas, and the first gas and the second gas have different compositions. It should be noted that, in an embodiment of the present invention, the The different compositions of the first gas and the second gas include that the compositions of the first gas and the second gas are not exactly the same. In another embodiment of the present invention, the first gas and the second gas are not identical. Different compositions of the two gases include completely different compositions of the first gas and the second gas, which are not limited in the present invention, and depend on specific circumstances.

較佳的，在本發明的一個實施例中，所述第二氣體為調節氣體，所述調節氣體用於調節所述第一氣體的蝕刻速率，例如，所述第二氣體可以為碳氟類氣體Cx Fy 或O2 。具體的，在本發明的一個實施例中，所述調節氣體用於降低所述第一氣體的蝕刻速率，在本發明的另一個實施例中，所述調節氣體用於提高所述第一氣體的蝕刻速率，本發明對此不做限定，具體視情況而定。Preferably, in an embodiment of the present invention, the second gas is a regulating gas, and the regulating gas is used to regulate the etching rate of the first gas, for example, the second gas may be a fluorocarbon Gas CxFy or O2 . Specifically, in one embodiment of the present invention, the regulating gas is used to reduce the etching rate of the first gas, and in another embodiment of the present invention, the regulating gas is used to increase the first gas The etching rate is not limited in the present invention, and it depends on the specific situation.

在上述實施例的基礎上，在本發明的一個實施例中，各所述第一氣體腔3021對應的所述第二入氣通路700獨立控制，以便於靈活控制不同的第一氣體腔3021通入的第二氣體的流量，從而更好的控制各第一氣體腔3021對應的蝕刻區域的蝕刻的速率，改善各所述第一氣體腔3021所對應的蝕刻區域的均勻性。在本發明的另一個實施例中，各所述第一氣體腔3021對應的所述第二入氣通路700也可以不完全獨立控制，以使得各所述第二入氣通路700中部分第二入氣通路700中通入的第二氣體流量相同，部分第二入氣通路700中通入的第二氣體流量不同，在本發明的其他實施例中，各所述第一氣體腔3021對應的所述第二入氣通路700還可以統一控制，以使得各所述第二入氣通路700通入的第二氣體流量均相同，本發明對此並不做具體限定。On the basis of the above embodiment, in an embodiment of the present invention, the second gas inlet passages 700 corresponding to the first gas chambers 3021 are independently controlled, so as to flexibly control the passages of different first gas chambers 3021 The flow rate of the incoming second gas can be controlled, so as to better control the etching rate of the etching region corresponding to each first gas cavity 3021 and improve the uniformity of the etching region corresponding to each first gas cavity 3021 . In another embodiment of the present invention, the second gas inlet passages 700 corresponding to each of the first gas chambers 3021 may not be completely independently controlled, so that part of the second gas inlet passages 700 The flow rate of the second gas introduced into the gas inlet passage 700 is the same, and the flow rate of the second gas introduced into some of the second gas inlet passages 700 is different. In other embodiments of the present invention, the corresponding first gas chambers 3021 The second gas inlet passages 700 can also be controlled uniformly, so that the flow rates of the second gas introduced into each of the second gas inlet passages 700 are the same, which is not specifically limited in the present invention.

在本發明的一個具體實施例中，如圖7所示，所述第一入氣通路400具有至少一個第一入氣孔401，並通過第一入氣孔401與其對應的第一氣體腔3021相連通；在本發明實施例中，所述第二入氣通路700具有至少一個第二入氣孔701，並通過第二入氣孔701與其對應的第一氣體腔3021相連通。In a specific embodiment of the present invention, as shown in FIG. 7 , the first gas inlet passage 400 has at least one first gas inlet hole 401 and communicates with its corresponding first gas cavity 3021 through the first gas inlet hole 401 In the embodiment of the present invention, the second gas inlet passage 700 has at least one second gas inlet hole 701, and is communicated with its corresponding first gas cavity 3021 through the second gas inlet hole 701.

在本發明的另一具體實施例中，所述第一入氣通路400具有至少兩個第一入氣孔401，所述第二入氣通路具有至少兩個第二入氣孔701，需要說明的是，為了使得通入到所述第一氣體腔3021的所述第一氣體和所述第二氣體混合均勻，調節所述第一氣體腔3021中不同位置蝕刻的均勻性，具體的，所述第一入氣孔401與所述第二入氣孔701沿所述環形腔302的環形方向間隔排布。In another specific embodiment of the present invention, the first air inlet passage 400 has at least two first air inlet holes 401, and the second air inlet passage has at least two second air inlet holes 701. It should be noted that , in order to make the first gas and the second gas introduced into the first gas chamber 3021 evenly mixed, adjust the uniformity of etching at different positions in the first gas chamber 3021, specifically, the first gas chamber 3021 An air inlet hole 401 and the second air inlet hole 701 are arranged at intervals along the annular direction of the annular cavity 302 .

需要說明的是，為了進一步使得通入到所述第一氣體腔3021的所述第一氣體和所述第二氣體混合均勻，在上述實施例的基礎上，在本發明的一個實施例中，所述第一入氣孔401與所述第二入氣孔701沿所述環形腔302的環形方向間隔排布包括：所述第一入氣孔401與所述第二入氣孔701沿所述環形腔302的環形方向均勻間隔排布。It should be noted that, in order to further make the first gas and the second gas introduced into the first gas chamber 3021 evenly mixed, on the basis of the above embodiment, in an embodiment of the present invention, The first air inlet holes 401 and the second air inlet holes 701 are arranged at intervals along the annular direction of the annular cavity 302 including: the first air inlet holes 401 and the second air inlet holes 701 are arranged along the annular cavity 302 The circular directions are evenly spaced.

在上述任一實施例的基礎上，在本發明的一個實施例中，所述第二入氣通路700可以為直的入氣通路，即所述第二入氣通路700的氣體輸送路徑為直線；在本發明的另一實施例中，所述第二入氣通路700的還可以為彎折的入氣通路，即所述第二入氣通路700中的氣體輸送路徑為非直線，本發明對此不做限定，具體視情況而定。On the basis of any of the above embodiments, in an embodiment of the present invention, the second gas inlet passage 700 may be a straight gas inlet passage, that is, the gas conveying path of the second gas inlet passage 700 is a straight line In another embodiment of the present invention, the second gas inlet passage 700 can also be a bent gas inlet passage, that is, the gas conveying path in the second gas inlet passage 700 is non-linear, the present invention There is no restriction on this, and it depends on the situation.

需要說明的是，如果所述第二入氣通路700的氣體輸送路徑為直線時，則所述第二入氣通路700中遠離所述第二入氣孔701的一端位於其對應的所述第一氣體腔3021的正上方；如果所述第二入氣通路700中的氣體輸送路徑為非直線（如曲線或折線）時，則所述第二入氣通路700中遠離所述第二入氣孔701的一端可以不位於其對應的所述第一氣體腔3021的正上方，本發明對此並不做限定，只要保證所述第二入氣通路700能夠將調節氣體通入到其對應的第二入氣孔701即可。It should be noted that, if the gas conveying path of the second gas inlet passage 700 is a straight line, the end of the second gas inlet passage 700 away from the second gas inlet hole 701 is located at the corresponding first end of the gas inlet passage 700 . Right above the gas cavity 3021; if the gas conveying path in the second gas inlet passage 700 is non-linear (such as a curve or a broken line), the second gas inlet passage 700 is far away from the second gas inlet hole 701 One end of the gas inlet may not be located directly above the corresponding first gas cavity 3021, which is not limited in the present invention, as long as it is ensured that the second gas inlet passage 700 can pass the regulating gas into its corresponding second gas chamber 3021. The air inlet hole 701 is sufficient.

在上述任一實施例的基礎上，在本發明的一個實施例中，如果所述中心腔301為一個中心氣體腔時，所述第一基板100中還具有貫穿所述第一基板100的第二中心入氣通路（未畫出），所述第二中心入氣通路與所述中心氣體腔相連通，其中，所述第二中心入氣通路用於通入所述第二氣體，且所述第二中心入氣通路與所述第二入氣通路700獨立控制。On the basis of any of the foregoing embodiments, in an embodiment of the present invention, if the central cavity 301 is a central gas cavity, the first substrate 100 further has a first substrate 100 extending through the first substrate 100 . Two central gas inlet passages (not shown), the second central gas inlet passage is communicated with the central gas cavity, wherein the second central gas inlet passage is used for introducing the second gas, and the The second central air inlet passage and the second air inlet passage 700 are independently controlled.

在上述任一實施例的基礎上，在本發明的一個實施例中，如圖9所示，所述氣體擋板還包括位於所述間隔件200背離所述第一基板100一側的第二基板110，所述第二基板110中具有複數個第一出氣孔111，所述複數個第一出氣孔111連通反應腔與所述氣體腔300，所述第一氣體腔3021對應所述複數個第一出氣孔111中至少兩個第一出氣孔111。On the basis of any of the above embodiments, in an embodiment of the present invention, as shown in FIG. 9 , the gas baffle further includes a second spacer 200 on the side of the spacer 200 away from the first substrate 100 . The substrate 110, the second substrate 110 has a plurality of first air outlets 111, the plurality of first air outlets 111 communicate with the reaction chamber and the gas chamber 300, and the first gas chamber 3021 corresponds to the plurality of first air outlets 111 There are at least two first air outlets 111 in the first air outlet holes 111 .

由上可知，本發明上述任一實施例所提供的等離子體處理設備的氣體擋板結構在蝕刻過程中，可以基於待處理晶圓表面的蝕刻需求和蝕刻情況，單獨控制所述環形腔302中的各第一氣體腔3021通入的氣體流量，以調節距離所述待處理晶圓中心同一距離不同位置處的蝕刻速率，使得所述待處理晶圓表面距離其中心同一距離不同位置處的蝕刻速率較為均衡，進而提高待處理晶圓表面距離其中心同一距離不同位置處的蝕刻均勻度，改善待處理晶圓表面距離其中心同一距離不同位置處的蝕刻不均勻現象。As can be seen from the above, in the etching process of the gas baffle structure of the plasma processing equipment provided by any of the above embodiments of the present invention, based on the etching requirements and etching conditions of the surface of the wafer to be processed, the annular cavity 302 can be independently controlled. The gas flow rate passed into each first gas chamber 3021 to adjust the etching rate at the same distance from the center of the wafer to be processed at different positions, so that the surface of the to-be-processed wafer is at the same distance from the center of the etching at different positions. The rate is more balanced, thereby improving the etching uniformity at different positions of the same distance from the center of the wafer surface to be processed, and improving the unevenness of etching at different positions at the same distance from the center of the wafer surface to be processed.

相應的，本發明還提供了一種等離子體處理設備，如圖10所示，所述等離子體處理設備包括： 腔體1，所述腔體1具有開口； 位於所述腔體1開口處的氣體擋板結構10，所述氣體擋板結構10與所述腔體1組成的空間為等離子體處理設備的反應腔； 位於所述反應腔內，且位於所述氣體擋板結構10下方的氣體噴淋頭20，所述氣體噴淋頭20上具有複數個第二出氣孔，所述第二出氣孔用於連通所述氣體腔300和所述反應腔；以及 位於所述反應腔內，與所述氣體噴淋頭20相對設置的基台30，所述基台30用於放置晶圓； 其中，所述氣體擋板結構10為上述任一實施例中所提供的氣體擋板結構10，所述第一入氣通路400通入的第一氣體用於對所述晶圓進行處理。Correspondingly, the present invention also provides a plasma processing equipment, as shown in FIG. 10 , the plasma processing equipment includes: cavity 1, the cavity 1 has an opening; The gas baffle structure 10 located at the opening of the cavity 1, the space formed by the gas baffle structure 10 and the cavity 1 is the reaction cavity of the plasma processing equipment; A gas shower head 20 located in the reaction chamber and below the gas baffle structure 10, the gas shower head 20 has a plurality of second air outlets, and the second air outlets are used to communicate with all the gas outlets. the gas chamber 300 and the reaction chamber; and a base 30 located in the reaction chamber and opposite to the gas shower head 20, the base 30 is used for placing wafers; The gas baffle structure 10 is the gas baffle structure 10 provided in any of the above embodiments, and the first gas introduced into the first gas inlet passage 400 is used for processing the wafer.

較佳的，在本發明實施例中，各所述第一氣體腔3021沿所述環形腔302的軸向分佈，即各所述第一氣體腔3021距離所述中心腔301的距離相同。Preferably, in the embodiment of the present invention, the first gas cavities 3021 are distributed along the axial direction of the annular cavity 302 , that is, the distances between the first gas cavities 3021 and the central cavity 301 are the same.

較佳的，在本發明的一個實施例中，不同所述第一入氣通路400通入的所述第一氣體的流量不同。具體的，在本發明一個實施例中，所述不同所述第一入氣通路400通入的所述第一氣體的流量不同包括：所述不同所述第一入氣通路400通入的所述第一氣體的流量不完全相同，在本發明的另一個實施例中，所述不同所述第一入氣通路400通入的所述第一氣體的流量不同包括：所述不同所述第一入氣通路400通入的所述第一氣體的流量完全不同，本發明對此不做限定，具體視情況而定。Preferably, in an embodiment of the present invention, the flow rates of the first gas introduced into different first gas inlet passages 400 are different. Specifically, in an embodiment of the present invention, the different flow rates of the first gas introduced into the different first gas inlet passages 400 include: The flow rates of the first gas are not exactly the same. In another embodiment of the present invention, the different flow rates of the first gas introduced into the different first gas inlet passages 400 include: The flow rate of the first gas introduced into the gas inlet passage 400 is completely different, which is not limited in the present invention, and depends on the specific situation.

本發明實施例所提供的等離子體處理設備中，所述氣體擋板結構10包括中心腔301和環繞所述中心腔301的至少一個環形腔302，所述至少一個環形腔302中至少一個環形腔302包括至少兩個第一氣體腔3021，各所述第一氣體腔3021分別對應一個第一入氣通路400，且各所述第一入氣通路400獨立控制，從而使得各所述第一氣體腔3021對應的第一入氣通路400中通入的第一氣體流量獨立控制，進而使得所述氣體擋板結構10中各第一入氣通路400中通入的第一氣體經過所述氣體噴淋頭20達到待處理晶圓表面的不同區域時，可以使得待處理基板表面不同區域的等離子體濃度可以獨立控制，以調節距離所述待處理晶圓中心同一距離不同位置處的蝕刻速率，使得所述待處理晶圓表面距離其中心同一距離不同位置處的蝕刻速率較為均衡，進而提高待處理晶圓表面距離其中心同一距離不同位置處的蝕刻均勻度，改善待處理晶圓表面距離其中心同一距離不同位置處的蝕刻不均勻現象。In the plasma processing apparatus provided by the embodiment of the present invention, the gas baffle structure 10 includes a central cavity 301 and at least one annular cavity 302 surrounding the central cavity 301 , and at least one annular cavity in the at least one annular cavity 302 302 includes at least two first gas cavities 3021, each of the first gas cavities 3021 corresponds to a first gas inlet passage 400, and each of the first gas inlet passages 400 is independently controlled, so that each of the first gas The flow rate of the first gas introduced into the first gas inlet passage 400 corresponding to the cavity 3021 is independently controlled, so that the first gas introduced into each of the first gas inlet passages 400 in the gas baffle structure 10 passes through the gas injection When the shower head 20 reaches different areas of the surface of the wafer to be processed, the plasma concentrations in different areas of the surface of the substrate to be processed can be independently controlled, so as to adjust the etching rates at different positions at the same distance from the center of the wafer to be processed, so that the The etching rate of the surface of the wafer to be processed at the same distance from its center at different positions is more balanced, thereby improving the etching uniformity of the surface of the to-be-processed wafer at the same distance from its center at different positions, improving the distance between the surface of the to-be-processed wafer and its center. Etching unevenness at different locations at the same distance.

在上述實施例的基礎上，在本發明的一個實施例中，所述等離子體處理設備還包括：與所述第一入氣通路400一一對應的第一控制元件410，所述第一控制元件410用於控制通過所述第一入氣通路400進入所述第一氣體腔3021的氣體流量。On the basis of the above embodiment, in an embodiment of the present invention, the plasma processing apparatus further includes: a first control element 410 corresponding to the first gas inlet passage 400 one-to-one, the first control element 410 The element 410 is used to control the gas flow rate into the first gas chamber 3021 through the first gas inlet passage 400 .

在上述任一實施例的基礎上，在本發明的一個實施例中，如果所述第一基板100中還具有貫穿所述第一基板100的至少兩個第二入氣通路700；所述等離子體處理設備還包括：與所述第二入氣通路700一一對應的第二控制元件710，所述第二控制元件710用於控制通過所述第二入氣通路700進入所述第一氣體腔3021的氣體流量。On the basis of any of the above embodiments, in an embodiment of the present invention, if the first substrate 100 further has at least two second gas inlet passages 700 penetrating the first substrate 100; the plasma The body treatment device further includes: a second control element 710 corresponding to the second gas inlet passage 700 one-to-one, and the second control element 710 is used to control the entry of the first gas through the second gas inlet passage 700 Gas flow in cavity 3021.

在上述任一實施例的基礎上，在本發明的一個實施例中，如果所述第一基板100中還具有貫穿所述第一基板100的第一中心入氣通路600，所述等離子體處理設備還包括與所述第一中心入氣通路600對應的第一中心控制元件610，所述第一中心控制元件610用於控制通過所述第一中心入氣通路600進入所述中心氣體腔的氣體流量。On the basis of any of the above embodiments, in an embodiment of the present invention, if the first substrate 100 further has a first central gas inlet passage 600 passing through the first substrate 100, the plasma treatment The device further includes a first central control element 610 corresponding to the first central air inlet passage 600 , and the first central control element 610 is used to control the flow of gas entering the central gas chamber through the first central air inlet passage 600 . gas flow.

在上述任一實施例的基礎上，在本發明的一個實施例中，如果所述第一基板100中還具有貫穿所述第一基板100的第二中心入氣通路（未畫出），所述等離子體處理設備還包括與所述第二中心入氣通路對應的第二中心控制元件（未畫出），所述第二中心控制元件用於控制通過所述第二中心入氣通路進入所述中心氣體腔的氣體流量。On the basis of any of the above embodiments, in an embodiment of the present invention, if the first substrate 100 further has a second central air inlet passage (not shown) passing through the first substrate 100, the The plasma processing apparatus further includes a second central control element (not shown) corresponding to the second central gas inlet passage, and the second central control element is used to control the entry of the gas through the second central gas inlet passage. the gas flow in the central gas chamber.

相應的，本發明還提供了一種等離子體處理方法，應用於上述任一實施例中提供的等離子體處理設備，如圖11所示，所述等離子體處理方法包括： （S10）將待處理晶圓放置在基台30上； （S20）向所述第一基板100中的各第一入氣通路400充入第一氣體；以及 （S30）控制各所述第一入氣通路400中通入的氣體流量，以控制所述晶圓的第一表面的蝕刻速率； 其中，各所述第一氣體腔3021中通入的所述第一氣體的流量不同。Correspondingly, the present invention also provides a plasma processing method, which is applied to the plasma processing equipment provided in any of the above embodiments. As shown in FIG. 11 , the plasma processing method includes: (S10) placing the wafer to be processed on the base 30; (S20) Filling each of the first gas inlet passages 400 in the first substrate 100 with a first gas; and (S30) controlling the gas flow rate introduced into each of the first gas inlet passages 400 to control the etching rate of the first surface of the wafer; The flow rate of the first gas introduced into each of the first gas chambers 3021 is different.

需要說明的是，在本發明實施例中，所述各所述第一氣體腔3021中通入的所述第一氣體的流量不同包括：所述各所述第一氣體腔3021中通入的所述第一氣體的流量不完全相同，在本發明的另一個實施例中，所述各所述第一氣體腔3021中通入的所述第一氣體的流量不同包括：所述各所述第一氣體腔中3021通入的所述第一氣體的流量完全不同。It should be noted that, in the embodiment of the present invention, the different flow rates of the first gas introduced into the first gas cavities 3021 include: The flow rates of the first gas are not exactly the same. In another embodiment of the present invention, the flow rates of the first gas introduced into the first gas chambers 3021 are different including: The flow rates of the first gas introduced into the first gas chamber 3021 are completely different.

本發明實施例所提供的應用於上述任一實施例中提供的等離子體處理設備的等離子體處理方法，所述氣體擋板結構10包括中心腔301和環繞所述中心腔301的至少一個環形腔302，所述至少一個環形腔302中至少一個環形腔302包括至少兩個第一氣體腔3021，各所述第一氣體腔3021分別對應一個第一入氣通路400，各所述第一入氣通路400獨立控制，進而使得在向所述第一基板100中的各第一入氣通路400充入第一氣體時，可以通過單獨控制各所述第一入氣通路400控制各所述第一入氣通路400中通入的氣體流量，以調節距離所述待處理晶圓中心同一距離不同位置處的蝕刻速率，使得所述待處理晶圓表面距離其中心同一距離不同位置處的蝕刻速率較為均衡，進而提高待處理晶圓表面距離其中心同一距離不同位置處的蝕刻均勻度，改善待處理晶圓表面距離其中心同一距離不同位置處的蝕刻不均勻現象。In the plasma processing method provided by the embodiment of the present invention and applied to the plasma processing apparatus provided in any of the above embodiments, the gas baffle structure 10 includes a central cavity 301 and at least one annular cavity surrounding the central cavity 301 302. At least one annular cavity 302 in the at least one annular cavity 302 includes at least two first gas cavities 3021, each of the first gas cavities 3021 corresponds to a first gas inlet passage 400, and each of the first gas inlets 3021 corresponds to a first gas inlet passage 400. The passages 400 are independently controlled, so that when the first gas is filled into the first gas inlet passages 400 in the first substrate 100 , the first gas inlet passages 400 can be individually controlled to control the first gas inlet passages 400 . The gas flow rate introduced in the gas inlet passage 400 is to adjust the etching rate at the same distance and different positions from the center of the wafer to be processed, so that the etching rate at the same distance from the center of the to-be-processed wafer surface at different positions is relatively high. Balance, thereby improving the etching uniformity at different positions of the same distance from the center of the wafer surface to be processed, and improving the unevenness of etching at different positions at the same distance from the center of the wafer surface to be processed.

在上述任一實施例的基礎上，在本發明的一個實施例中，如果所述第一基板100中還具有貫穿所述第一基板100的至少兩個第二入氣通路700，該等離子體處理方法還包括： 向所述第一基板100中的第二入氣通路700充入所述第二氣體；以及 通過控制各所述第二入氣通路700中的氣體流量，控制所述晶圓第一表面的蝕刻速率。On the basis of any of the above embodiments, in an embodiment of the present invention, if the first substrate 100 further has at least two second gas inlet passages 700 penetrating the first substrate 100, the plasma Processing methods also include: filling the second gas into the second gas inlet passage 700 in the first substrate 100; and By controlling the gas flow in each of the second gas inlet passages 700, the etching rate of the first surface of the wafer is controlled.

具體的，在本發明中的一個實施例中，可通過調節第一氣體腔3021中的第一氣體和第二氣體的流量比，從而調節各第一氣體腔3021所對應的蝕刻速率。Specifically, in an embodiment of the present invention, the etching rate corresponding to each first gas chamber 3021 can be adjusted by adjusting the flow ratio of the first gas and the second gas in the first gas chamber 3021 .

在上述任一實施例的基礎上，在本發明的一個實施例中，如果所述第一基板100中還具有貫穿所述第一基板100的第二中心入氣通路（未畫出），該等離子體處理方法還包括： 向所述第一基板100中的第二中心入氣通路充入所述第二氣體； 通過控制所述第二中心入氣通路的氣體流量，控制所述晶圓的第一表面的蝕刻速率。On the basis of any of the above embodiments, in an embodiment of the present invention, if the first substrate 100 further has a second central air inlet passage (not shown) passing through the first substrate 100, the The plasma treatment method also includes: filling the second gas into the second central gas inlet passage in the first substrate 100; The etching rate of the first surface of the wafer is controlled by controlling the gas flow rate of the second central gas inlet passage.

需要說明的是，在本發明一個實施例中各氣體腔300都對應著用於通入第一氣體的入氣通路和通入第二氣體的入氣通路，且各氣體腔300所對應的用於通入第一氣體的入氣通路和用於通入第二氣體的入氣通路也是獨立控制的。因此，在本發明的其他實施例中，根據蝕刻情況，也可以通過調節各氣體腔的第一氣體和第二氣體的流量比，來調節各氣體腔300所對應的蝕刻速率。It should be noted that, in an embodiment of the present invention, each gas cavity 300 corresponds to an air inlet passage for introducing the first gas and a gas inlet passage for introducing the second gas, and the corresponding gas chambers 300 The gas inlet passage for introducing the first gas and the gas inlet passage for introducing the second gas are also independently controlled. Therefore, in other embodiments of the present invention, according to the etching situation, the etching rate corresponding to each gas chamber 300 can also be adjusted by adjusting the flow ratio of the first gas and the second gas in each gas chamber.

綜上可知，本發明實施例所提供的等離子體處理設備及其氣體擋板結構、等離子體處理方法中，所述氣體擋板包括複數個氣體腔，所述複數個氣體腔包括中心腔和環繞所述中心腔的至少一個環形腔，所述至少一個環形腔中至少一個環形腔包括至少兩個第一氣體腔，各所述第一氣體腔分別對應一個第一入氣通路，各所述第一入氣通路獨立控制，從而使得各所述第一氣體腔對應的第一入氣通路中通入的第一氣體流量獨立控制。因此，在蝕刻過程中，可以基於待處理晶圓表面的蝕刻需求和蝕刻情況，單獨控制所述環形腔中的各第一氣體腔通入的氣體流量，以調節距離所述待處理晶圓中心同一距離不同位置處的蝕刻速率，使得所述待處理晶圓表面距離其中心同一距離不同位置處的蝕刻速率較為均衡，進而提高待處理晶圓表面距離其中心同一距離不同位置處的蝕刻均勻度，改善待處理晶圓表面距離其中心同一距離不同位置處的蝕刻不均勻現象。To sum up, in the plasma processing apparatus, the gas baffle structure, and the plasma processing method provided by the embodiments of the present invention, the gas baffle includes a plurality of gas cavities, and the plurality of gas cavities include a central cavity and a surrounding At least one annular cavity in the central cavity, at least one annular cavity in the at least one annular cavity includes at least two first gas cavities, each of the first gas cavities corresponds to a first gas inlet passage, and each of the first gas cavities corresponds to a first gas inlet passage. An air inlet passage is independently controlled, so that the flow rate of the first gas introduced into the first air inlet passage corresponding to each of the first gas chambers is independently controlled. Therefore, in the etching process, the gas flow rate of each first gas chamber in the annular cavity can be individually controlled based on the etching requirements and etching conditions on the surface of the wafer to be processed, so as to adjust the distance from the center of the wafer to be processed. The etching rates at different positions at the same distance make the etching rates at different positions at the same distance from the center of the wafer surface to be processed more balanced, thereby improving the etching uniformity at different positions at the same distance from the center of the wafer surface to be processed , to improve the uneven etching of the surface of the wafer to be processed at the same distance from its center at different positions.

本說明書中各個部分採用並列和遞進的方式描述，每個部分重點說明的都是與其他部分的不同之處，各個部分之間相同相似部分互相參見即可。Each part in this specification is described in a juxtaposed and progressive manner, and each part focuses on the differences from other parts, and the same and similar parts among the various parts can be referred to each other.

對所公開的實施例的上述說明，使所屬技術領域中具有通常知識者能夠實現或使用本發明。對這些實施例的多種修改對所屬技術領域中具有通常知識者來說將是顯而易見的，本文中所定義的一般原理可以在不脫離本發明的精神或範圍的情況下，在其它實施例中實現。因此，本發明將不會被限制於本文所示的實施例，而是要符合與本文所公開的原理和新穎特點相一致的最寬的範圍。The above description of the disclosed embodiments enables any person of ordinary skill in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention . Thus, the present invention is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

1:腔體 10:氣體擋板結構 100:第一基板 110:第二基板 111:第一出氣孔 20:氣體噴淋頭 200:間隔件 30:基台 300:氣體腔 301:中心腔 302:環形腔 3021:第一氣體腔 400:第一入氣通路 401:第一入氣孔 410:第一控制元件 500:密封圈 600:第一中心入氣通路 601:第一中心入氣孔 610:第一中心控制元件 700:第二入氣通路 701:第二入氣孔 710:第二控制元件 S10～S30:步驟1: Cavity 10: Gas baffle structure 100: The first substrate 110: Second substrate 111: The first vent 20: Gas shower head 200: Spacer 30: Abutment 300: gas chamber 301: Central cavity 302: annular cavity 3021: First gas chamber 400: The first air inlet passage 401: The first air inlet 410: First control element 500: sealing ring 600: The first central air inlet passage 601: The first center air inlet 610: First central control element 700: Second air inlet passage 701: Second air inlet 710: Second control element S10～S30: Steps

為了更清楚地說明本發明實施例或習知技術中的技術方案，下面將對實施例或習知技術描述中所需要使用的附圖作簡單地介紹，顯而易見地，下面描述中的附圖僅僅是本發明的一些實施例，對於所屬技術領域中具有通常知識者來講，在不付出具進步性的改變的前提下，還可以根據這些附圖獲得其他的附圖。 圖1為本發明實施例提供的一種氣體擋板結構的剖面示意圖； 圖2為本發明實施例提供的一種氣體擋板結構的仰視圖； 圖3為本發明實施例提供的一種氣體擋板結構的俯視圖； 圖4為本發明實施例提供的一種氣體擋板結構中各氣體腔的劃分示圖； 圖5為本發明實施例提供的另一種氣體擋板結構中各氣體腔的劃分示意圖； 圖6為本發明實施例提供的另一種氣體擋板結構的剖面示意圖； 圖7為本發明實施例提供的另一種氣體擋板結構的仰視圖； 圖8為本發明實施例提供的另一種氣體擋板結構的俯視圖； 圖9為本發明實施例提供的又一種氣體擋板結構的剖面示意圖； 圖10為本發明實施例提供的一種等離子體處理設備的剖面示意圖；以及 圖11為本發明實施例提供的一種等離子體蝕刻方法流程示意圖。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or in the prior art, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those with ordinary knowledge in the technical field, other drawings can also be obtained from these drawings without making progressive changes. 1 is a schematic cross-sectional view of a gas baffle structure according to an embodiment of the present invention; 2 is a bottom view of a gas baffle structure provided by an embodiment of the present invention; 3 is a top view of a gas baffle structure according to an embodiment of the present invention; 4 is a diagram illustrating the division of each gas cavity in a gas baffle structure according to an embodiment of the present invention; 5 is a schematic diagram of the division of each gas cavity in another gas baffle structure provided by an embodiment of the present invention; 6 is a schematic cross-sectional view of another gas baffle structure provided by an embodiment of the present invention; 7 is a bottom view of another gas baffle structure provided by an embodiment of the present invention; 8 is a top view of another gas baffle structure provided by an embodiment of the present invention; 9 is a schematic cross-sectional view of yet another gas baffle structure provided by an embodiment of the present invention; 10 is a schematic cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention; and FIG. 11 is a schematic flowchart of a plasma etching method according to an embodiment of the present invention.

301:中心腔 301: Central cavity

302:環形腔 302: annular cavity

3021:第一氣體腔 3021: First gas chamber

401:第一入氣孔 401: The first air inlet

601:第一中心入氣孔 601: The first center air inlet

Claims (13)

一種等離子體處理設備的氣體擋板結構，其中，包括：一第一基板和設置在該第一基板的一第一表面的複數個間隔件，該第一基板和該複數個間隔件形成複數個氣體腔，該複數個氣體腔包括一中心腔和環繞該中心腔的至少一個環形腔，該至少一個環形腔中的至少一個該環形腔包括至少兩個第一氣體腔，各該第一氣體腔沿該環形腔的軸向分佈；其中，該第一基板中具有貫穿該第一基板的至少兩個第一入氣通路，該第一入氣通路與該第一氣體腔一一對應，且該第一入氣通路與其對應的該第一氣體腔相連通，該第一入氣通路用於通入一第一氣體，且各該第一入氣通路為獨立控制；其中，該第一基板中還具有貫穿該第一基板的至少兩個第二入氣通路，該第二入氣通路與該第一氣體腔一一對應，且該第二入氣通路與其對應的該第一氣體腔相連通；其中，該第二入氣通路用於通入一第二氣體，該第一氣體和該第二氣體的成分不同；其中，該第一入氣通路具有至少一個第一入氣孔，並通過該第一入氣孔與其對應的該第一氣體腔相連通；該第二入氣通路具有至少一個第二入氣孔，並通過該第二入氣孔與其對應的該第一氣體腔相連通；其中，該第一入氣孔與該第二入氣孔沿該環形腔的環形方向間隔排佈。 A gas baffle structure for plasma processing equipment, comprising: a first substrate and a plurality of spacers disposed on a first surface of the first substrate, the first substrate and the plurality of spacers form a plurality of spacers Gas chambers, the plurality of gas chambers include a central chamber and at least one annular chamber surrounding the central chamber, at least one of the at least one annular chamber includes at least two first gas chambers, each of the first gas chambers Distributed along the axial direction of the annular cavity; wherein, the first substrate has at least two first gas inlet passages penetrating the first substrate, the first gas inlet passages are in one-to-one correspondence with the first gas cavity, and the The first gas inlet passage is communicated with the corresponding first gas cavity, and the first gas inlet passage is used for introducing a first gas, and each of the first gas inlet passages is controlled independently; It also has at least two second gas inlet passages penetrating the first substrate, the second gas inlet passages are in one-to-one correspondence with the first gas cavity, and the second gas inlet passages are communicated with their corresponding first gas chambers ; Wherein, the second gas inlet passage is used for introducing a second gas, and the composition of the first gas and the second gas is different; wherein, the first gas inlet passage has at least one first gas inlet hole, and passes through the The first gas inlet is communicated with the corresponding first gas cavity; the second gas inlet passage has at least one second gas inlet, and is communicated with the corresponding first gas cavity through the second gas inlet; wherein, the The first air inlet holes and the second air inlet holes are arranged at intervals along the annular direction of the annular cavity. 根據請求項1所述的氣體擋板結構，其中，該至少一個環形腔包括複數個該環形腔，不同該環形腔中包括的該第一氣體腔的數量相同或不同。 The gas baffle structure according to claim 1, wherein the at least one annular cavity includes a plurality of annular cavities, and the number of the first gas cavities included in different annular cavities is the same or different. 根據請求項2所述的氣體擋板結構，其中，如果不同該環形腔中 包括的該第一氣體腔的數量不同，該複數個環形腔中至少一個該環形腔包括一個該第一氣體腔。 The gas baffle structure according to claim 2, wherein, if different in the annular cavity The number of the included first gas cavities is different, and at least one of the annular cavities among the plurality of annular cavities includes one of the first gas cavities. 根據請求項2所述的氣體擋板結構，其中，如果不同該環形腔中包括的該第一氣體腔的數量不同，所述複數個環形腔中至少兩個該環形腔包括複數個該第一氣體腔，且不同該環形腔中對應的複數個該第一氣體腔的數量不同。 The gas baffle structure according to claim 2, wherein if the number of the first gas cavities included in the annular cavities is different, at least two of the annular cavities in the plurality of annular cavities include a plurality of the first gas cavities A gas cavity, and the number of the plurality of corresponding first gas cavities in different annular cavities is different. 根據請求項1所述的氣體擋板結構，其中，該第一入氣通路具有至少兩個該第一入氣孔，該第二入氣通路具有至少兩個該第二入氣孔，該第一入氣孔與該第二入氣孔沿該環形腔的環形方向間隔排布。 The gas baffle structure according to claim 1, wherein the first gas inlet passage has at least two first gas inlet holes, the second gas inlet passage has at least two second gas inlet holes, and the first gas inlet passage has at least two second gas inlet holes. The air holes and the second air inlet holes are arranged at intervals along the annular direction of the annular cavity. 根據請求項1所述的氣體擋板結構，其中，該中心腔為一個中心氣體腔，該第一基板中還具有貫穿該第一基板的一第一中心入氣通路，該第一中心入氣通路與該中心氣體腔相連通，用於通入該第一氣體，且該第一中心入氣通路和該第一入氣通路為獨立控制。 The gas baffle structure according to claim 1, wherein the central cavity is a central gas cavity, the first substrate further has a first central gas inlet passage through the first substrate, and the first central gas inlet The passage is communicated with the central gas cavity and is used for introducing the first gas, and the first central gas inlet passage and the first gas inlet passage are independently controlled. 根據請求項6所述的氣體擋板結構，其中，該第一基板中還具有貫穿該第一基板的一第二中心入氣通路，該第二中心入氣通路與該中心氣體腔相連通，其中，該第二中心入氣通路用於通入一第二氣體，且該第二中心入氣通路與該第二入氣通路為獨立控制。 The gas baffle structure according to claim 6, wherein the first substrate further has a second central gas inlet passage penetrating the first substrate, and the second central gas inlet passage communicates with the central gas cavity, Wherein, the second central gas inlet passage is used for introducing a second gas, and the second central gas inlet passage and the second gas inlet passage are independently controlled. 根據請求項1所述的氣體擋板結構，其中，該氣體擋板結構還包括位於該間隔件背離該第一基板的一側的一第二基板，該第二基板中具有複數個第一出氣孔，該第一出氣孔與其對應的該氣體腔相連通。 The gas baffle structure according to claim 1, wherein the gas baffle structure further comprises a second substrate located on a side of the spacer away from the first substrate, and the second substrate has a plurality of first outlets. A gas hole, the first gas outlet is communicated with the corresponding gas cavity. 一種等離子體處理設備，其中，包括：一腔體，該腔體具有一開口；一氣體擋板結構，其位於該腔體的該開口處，該氣體擋板結構與該腔體組成的空間為該等離子體處理設備的一反應腔，該氣體擋板結構為如請 求項1-8中任一項所述的氣體擋板結構；一氣體噴淋頭，其位於該反應腔內，且位於該氣體擋板結構的下方，該氣體噴淋頭上具有複數個第二出氣孔，該第二出氣孔用於連通該氣體腔和該反應腔；以及一基台，其位於該反應腔內，與該氣體噴淋頭相對設置，該基台用於放置一晶圓；其中，該第一入氣通路通入的該第一氣體用於對該晶圓進行處理。 A plasma processing equipment, including: a cavity, the cavity has an opening; a gas baffle structure, which is located at the opening of the cavity, the space formed by the gas baffle structure and the cavity is A reaction chamber of the plasma processing equipment, the gas baffle structure is as follows The gas baffle structure described in any one of the items 1-8; a gas shower head, which is located in the reaction chamber and below the gas baffle structure, and the gas shower head has a plurality of second an air outlet, the second air outlet is used to communicate the gas chamber and the reaction chamber; and a base located in the reaction chamber and opposite to the gas shower head, and the base is used to place a wafer; Wherein, the first gas introduced into the first gas inlet passage is used for processing the wafer. 根據請求項9所述的等離子體處理設備，其中，該等離子體處理設備還包括：一第一控制元件，其與該第一入氣通路一一對應，該第一控制元件用於控制通過該第一入氣通路進入該第一氣體腔的氣體流量。 The plasma processing apparatus according to claim 9, wherein the plasma processing apparatus further comprises: a first control element corresponding to the first gas inlet passage one-to-one, and the first control element is used to control the passage of the gas through the The gas flow rate of the first gas inlet passage into the first gas chamber. 根據請求項11所述的等離子體處理設備，其中，如果該第一基板中還具有貫穿該第一基板的至少兩個第二入氣通路，該等離子體處理設備還包括：與該第二入氣通路一一對應的一第二控制元件，該第二控制元件用於控制通過該第二入氣通路進入該第一氣體腔的氣體流量。 The plasma processing apparatus according to claim 11, wherein, if the first substrate further has at least two second gas inlet passages penetrating the first substrate, the plasma processing apparatus further comprises: A second control element corresponding to the gas passages one-to-one, and the second control element is used to control the gas flow rate entering the first gas chamber through the second gas inlet passage. 一種等離子體處理方法，其中，應用於如請求項9-11中任一項所述的等離子體處理設備，該等離子體處理方法包括：將待處理的該晶圓放置在該基台上；向該第一基板中的各該第一入氣通路充入該第一氣體；以及控制各該第一入氣通路中通入的氣體流量，以控制該晶圓的一第一表面的蝕刻速率；其中，各該第一氣體腔中通入的該第一氣體的流量不同。 A plasma processing method, which is applied to the plasma processing equipment according to any one of claims 9 to 11, the plasma processing method comprising: placing the wafer to be processed on the base; Each of the first gas inlet passages in the first substrate is filled with the first gas; and the flow rate of the gas introduced into each of the first gas inlet passages is controlled to control the etching rate of a first surface of the wafer; Wherein, the flow rate of the first gas introduced into each of the first gas chambers is different. 根據請求項12所述的等離子體處理方法，其中，如果該第一基 板中還具有貫穿該第一基板的至少兩個第二入氣通路，該等離子體處理方法還包括：向該第一基板中的第二入氣通路充入第二氣體；通過控制各該第二入氣通路中的氣體流量，控制該晶圓的該第一表面的蝕刻速率。 The plasma treatment method according to claim 12, wherein if the first base The board also has at least two second gas inlet passages penetrating the first substrate, and the plasma processing method further comprises: filling the second gas inlet passages in the first substrate with a second gas; by controlling each of the second gas inlet passages The gas flow in the gas inlet channel controls the etching rate of the first surface of the wafer.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114214607B (en) * 2021-12-16 2022-10-18 四川大学 Gas shunting device and plasma processing equipment with same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0730532B1 (en) * 1993-11-17 2000-08-16 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
TW501168B (en) * 2000-03-30 2002-09-01 Tokyo Electron Ltd Method of and apparatus for tunable gas injection in a plasma processing system
CN101339895A (en) * 2008-08-22 2009-01-07 北京北方微电子基地设备工艺研究中心有限责任公司 Gas distribution device and plasma processing apparatus applying the same
TW201330090A (en) * 2011-09-27 2013-07-16 Tokyo Electron Ltd Plasma etching method and method for manufacturing semiconductor device
TW201435138A (en) * 2012-12-21 2014-09-16 Applied Materials Inc Apparatus and methods for symmetrical gas distribution with high purge efficiency
TW201435962A (en) * 2012-11-19 2014-09-16 Tokyo Electron Ltd Capacitively coupled plasma equipment with uniform plasma density
TW201830460A (en) * 2016-11-09 2018-08-16 美商蘭姆研究公司 Active showerhead

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4177192B2 (en) * 2003-08-05 2008-11-05 株式会社日立ハイテクノロジーズ Plasma etching apparatus and plasma etching method
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
JP4701776B2 (en) * 2005-03-25 2011-06-15 東京エレクトロン株式会社 Etching method and etching apparatus
JP4327804B2 (en) * 2006-02-06 2009-09-09 株式会社日立製作所 Etching apparatus and etching processing method
CN101465286B (en) * 2008-12-31 2010-09-29 中微半导体设备(上海)有限公司 Etching method capable of regulating silicon wafer surface etching velocity uniformity
CN102231360B (en) * 2011-05-27 2013-05-15 中微半导体设备(上海)有限公司 Method for regulating etching gas in plasma etching cavity
JP5902896B2 (en) * 2011-07-08 2016-04-13 東京エレクトロン株式会社 Substrate processing equipment
JP5792563B2 (en) * 2011-08-31 2015-10-14 東京エレクトロン株式会社 Plasma etching method and plasma etching apparatus
CN103219260A (en) * 2012-01-19 2013-07-24 中芯国际集成电路制造(上海)有限公司 Etching device using extreme-edge gas pipeline
CN104576279B (en) * 2013-10-22 2017-02-15 中微半导体设备(上海)有限公司 Gas adjusting device and plasma reactor employing same
CN105336563A (en) * 2014-07-24 2016-02-17 北京北方微电子基地设备工艺研究中心有限责任公司 Etching apparatus and etching method
CN109065432A (en) * 2018-08-03 2018-12-21 德淮半导体有限公司 A kind of dry etching equipment

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0730532B1 (en) * 1993-11-17 2000-08-16 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
TW501168B (en) * 2000-03-30 2002-09-01 Tokyo Electron Ltd Method of and apparatus for tunable gas injection in a plasma processing system
CN101339895A (en) * 2008-08-22 2009-01-07 北京北方微电子基地设备工艺研究中心有限责任公司 Gas distribution device and plasma processing apparatus applying the same
TW201330090A (en) * 2011-09-27 2013-07-16 Tokyo Electron Ltd Plasma etching method and method for manufacturing semiconductor device
TW201435962A (en) * 2012-11-19 2014-09-16 Tokyo Electron Ltd Capacitively coupled plasma equipment with uniform plasma density
TW201435138A (en) * 2012-12-21 2014-09-16 Applied Materials Inc Apparatus and methods for symmetrical gas distribution with high purge efficiency
TW201830460A (en) * 2016-11-09 2018-08-16 美商蘭姆研究公司 Active showerhead

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