TWI776224B - 負載鎖定裝置 - Google Patents
負載鎖定裝置 Download PDFInfo
- Publication number
- TWI776224B TWI776224B TW109130338A TW109130338A TWI776224B TW I776224 B TWI776224 B TW I776224B TW 109130338 A TW109130338 A TW 109130338A TW 109130338 A TW109130338 A TW 109130338A TW I776224 B TWI776224 B TW I776224B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- load lock
- holding structure
- gas
- chamber
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 210
- 238000012546 transfer Methods 0.000 claims description 51
- 238000012545 processing Methods 0.000 claims description 24
- 230000006837 decompression Effects 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 71
- 238000010586 diagram Methods 0.000 description 16
- 239000006185 dispersion Substances 0.000 description 8
- 239000011859 microparticle Substances 0.000 description 8
- 239000000470 constituent Substances 0.000 description 6
- 239000010419 fine particle Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Glass Compositions (AREA)
- Amplifiers (AREA)
- Fats And Perfumes (AREA)
- Mechanical Control Devices (AREA)
- Chairs Characterized By Structure (AREA)
- Jib Cranes (AREA)
Abstract
本發明提供的負載鎖定裝置,係具備:負載鎖定室、以及在前述負載鎖定室中用來保持基板之基板保持構造。前述基板保持構造,係具有:與前述基板相對向的對向面,並且係製作成:可讓氣體流經過前述基板與前述對向面之間的空間。在利用前述基板保持構造來保持著前述基板的狀態下,較前述對向面的外緣更位於內側位置的部分與前述基板之距離,係大於前述對向面的前述外緣與前述基板之距離。
Description
本發明係關於:負載鎖定裝置。
專利文獻1所揭示的真空處理裝置,係具有:負載鎖定室、配置在負載鎖定室中的晶圓台、以及用來使晶圓台進行昇降的機構。晶圓台則是具有凸形狀。
然而,具有專利文獻1所揭示的晶圓台之這種構造的基板保持構造,當在負載鎖定室內形成氣流時,晶圓台將會導致駐渦的生成。這種駐渦(Standing vortex),例如:將會造成微粒子從基板的下方飛揚到基板的上方,而導致微粒子附著在基板上。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開平5-140743號公報
本發明係提供:有助於防止微粒子附著到基板的技術。
本發明的其中一種面向,係關於具備:負載鎖定室、以及在前述負載鎖定室中用來保持基板之基板保持構造之負載鎖定裝置,其中,前述基板保持構造,係具有:與前述基板相對向的對向面,並且係製作成:可讓氣體流經過前述基板與前述對向面之間的空間,在利用前述基板保持構造來保持著前述基板的狀態下,較前述對向面的外緣更位於內側位置的部分與前述基板之距離,係大於前述對向面的前述外緣與前述基板之距離。
茲佐以圖面詳細說明實施方式如下。再者,以下的實施方式並不是用來限定申請專利範圍所記載的發明。在實施方式中雖然記載著複數個特徵,但這些複數個特徵並非全部都是發明的必要構件,也可以將這些複數個特徵依照實際的需要來加以組合。此外,在圖面中,針對於同一個構件或同樣的構件,都標註同一個元件符號,並且省略其重複的說明。
圖1係顯示具備本發明的第1實施方式的負載鎖定裝置100的處理裝置的構成要件之示意圖。負載鎖定裝置100係可具有:配置於裝載室30與轉送室20之間的負載鎖定室110。裝載室30內係可以被保持在大氣環境的狀態。在裝載室30內,例如:係可以從載具來提供基板S。或者,也可以從前處理裝置將基板S提供到裝載室30內。裝載室30係可在其頂棚具備濾清器32,而從頂棚通過濾清器32將氣體往下供給到裝載室30的內部空間。在裝載室30中係配置有搬運用機械人34,可以利用搬運用機械人34來搬運基板S。搬運用機械人34係可通過閥門50而將基板S從裝載室30搬運到負載鎖定室110。基板S被搬運到負載鎖定室110內之後,就將該室內充分地進行減壓。然後,配置在轉送室20內的搬運用機械人22,係可通過閥門40而將基板S從負載鎖定室110搬運到轉送室20。然後,搬運用機械人22係可通過閥門60而從轉送室20將基板S搬運到減壓處理裝置10。減壓處理裝置10,可以是例如:化學氣相沉積(CVD)裝置、物理氣相沉積(PVD)裝置、蝕刻裝置、電漿處理裝置以及電子束描繪裝置的其中一種。
負載鎖定室110,係可以具有:連接於與減壓處理裝置10相連接的轉送室20之第1搬運口111、以及連接於裝載室30之第2搬運口112。在一種例子中,第1搬運口111的高度(例如:第1搬運口111之下端的高度)係低於第2搬運口112的高度(例如:第2搬運口112之下端的高度)。第1搬運口111係可以被配置成:可通過閥門40來與轉送室20的內部空間相連通。第2搬運口112係可以被配置成:可通過閥門50來與裝載室30的內部空間相連通。
負載鎖定裝置100,係可以具備用來將氣體(例如:淨化後的乾空氣或氮氣)導入負載鎖定室110之氣體導入部160。氣體導入部160,係可以配置在例如:基板S通過第1搬運口111而被搬運到轉送室20的狀態時之基板保持構造120與轉送室20之間的通道的上方。在一種例子中,氣體導入部160係可以配置在第1搬運口111的上方。氣體導入部160,係可以包含用來將氣體分散到負載鎖定室110的內部空間之氣體分散部162。氣體分散部162之至少一部分,係可以配置在負載鎖定室110的內部。氣體分散部162,係可以配置於與第2搬運口112相對向的位置。氣體導入部160,係可以包含用來調整氣體的導入量之流量調整閥門164。氣體分散部162,係可以具有柱形狀部,負載鎖定室110的內側面,係可以包含與該柱形狀部分開且沿著該柱形狀部之彎曲面。該柱形狀部,係可以具有圓柱形狀,該彎曲面,係可以構成圓筒面的一部分。
負載鎖定裝置100,係可以具備:在負載鎖定室110中,用來保持基板S之基板保持構造120。基板保持構造120,係可以具有與基板S相對向的對向面OS,並且係被製作成:可讓氣體流經過基板S與對向面OS之間的空間。如圖10的放大圖所示般地,基板保持構造120,係可以具有:當基板S被基板保持構造120所保持的狀態下,較對向面OS的外緣EE更位於內側位置的部分PP與基板S之距離,係大於對向面OS的外緣EE與基板S的距離之構造。經過電腦模擬實驗的結果,已經確認出這種構造,係如圖10中的虛線箭頭所示般地,用於抑制:在負載鎖定室110的內部空間內的氣流中形成駐渦具有很高的效果。此處的氣流(氣體的流動),係導因於:氣體導入部160將氣體導入到負載鎖定室110的內部空間,以及/或者後述的泵浦150等將氣體從該內部空間排出而被形成的。因此,在從大氣壓起迄高真空為止之大範圍內產生壓力變化的負載鎖定室110內,一定是會形成氣流(氣體的流動)。
另外,如圖11中的虛線箭頭所示般地,如果用來保持基板S之基板保持構造SH具有會防礙氣體流動的這種壁面的話,將會在氣流中形成駐渦。這種駐渦,係會將微粒子往上飛揚而導致該微粒子附著在基板S上。此外,經過電腦模擬實驗的結果,也確認出:如圖12中的虛線箭頭所示般地,即使用來保持基板S之基板保持構造SH’係具有與基板S的下表面平行的平面之對向面OS’的情況下,也還是會在氣流中形成駐渦。這種駐渦,係會將微粒子往上飛揚而導致該微粒子附著在基板S上。
回到圖1來繼續進行說明。基板保持構造120,係可以包含:具有對向面OS之第1構件125、以及具有與第1構件125的下表面LS相對向的上表面US之第2構件126。基板保持構造120,係可以包含:與基板S進行接觸且用來支承基板S之複數個接觸部124。第2構件126,係可以用來支承第1構件125以及複數個接觸部124。第2構件126的上表面US,係可以具有:沿著第1構件125的下表面LS之形狀。這種構造,係可以形成氣體之圓滑的氣流。此處,如果在相對向的第1構件125(下表面LS)與第2構件126 (上表面US)所界定的空間,不被當成氣體流路之構造的話,換言之,例如在該空間內係被填滿固體之構造的話,則氣體的流動將會受到阻礙,而會發生駐渦。相對於此,第1構件125(下表面LS)與第2構件126(上表面US)互相對向的構造,係有助於用來抑制駐渦的發生。
負載鎖定裝置100係可以具備:驅動機構130。驅動機構130,係被配置在負載鎖定室110的下方,且用來使基板保持構造120進行昇降。驅動機構130係可經由連結構件122來連結於基板保持構造120。
負載鎖定室110,係可以具備:從負載鎖定室110的下部往側方延長之延長室140、以及被配置在延長室140的下方且經由延長室140來將負載鎖定室110內的氣體予以排出之泵浦150。延長室140,係可以具備:具有設在偏離開基板保持構造120的鉛直下方的位置處的開口142之底面144。泵浦150,係可連接於開口142。雖然沒有圖示出來,但可以在泵浦150與開口142之間,配置閥門。
泵浦150係可以包含例如:旋轉泵浦、以及被配置在該旋轉泵浦與開口142之間的渦輪分子泵浦。渦輪分子泵浦的渦輪,在作動時係進行高速旋轉。被渦輪分子泵浦所吸引過來的微粒子與渦輪發生撞擊的話,將會被渦輪彈飛出去。此外,無論泵浦150是否為渦輪分子泵浦,泵浦150本身都會產生微粒子。因此,係將泵浦150連接於:開設在從負載鎖定室110的下部往側方延長之延長室140的底面144的開口142為佳。如此一來,可以減少來自泵浦150的微粒子通過基板保持構造120的側面與負載鎖定室的內側面之間隙G而抵達基板S的上方的空間,因而附著在基板S上之情事。
配置在負載鎖定室110的第2搬運口112與裝載室30之間的閥門50,係可以連接於氣體排出管路52。位於第2搬運口112附近的空間內的氣體,係可以通過氣體排出管路52而排出到負載鎖定室110的外部空間。氣體排出管路52,係可以連接於未圖示的泵浦。
第2搬運口112之至少一部分,係可以配置在延長室140之上方(鉛直上方)。或者,延長室140之至少一部分,係可以配置在第2搬運口112與泵浦150之間。這樣的結構,係有助於縮小負載鎖定裝置100的設置面積。
裝載室30之至少一部分,係可以配置在延長室140的上方(鉛直上方)。或者,延長室140之至少一部分,係可以配置在裝載室30與泵浦150之間。這樣的結構,也有助於縮小負載鎖定裝置100的設置面積。
圖15係顯示負載鎖定室110、延長室140以及氣體分散部162的配置之平面圖。這個平面圖,係可以視為:對於配置了負載鎖定裝置100的地板面的正投影。基板保持構造120,係可以在該平面圖或該正投影中,位於氣體分散部162與延長室140之間。或者,開口142,係可以在該平面圖或該正投影中,位於氣體分散部162與延長室140之間。
基板保持構造120的側面與負載鎖定室110的內側面之間隙G的面積,係小於第2搬運口112的截面積為佳。間隙G的面積,係小於第2搬運口112的截面積的1/2、1/3或1/4更好。這樣的結構,當從裝載室30通過第2搬運口112將基板S搬運到負載鎖定室110的內部空間時,可以有助於:將從氣體分散部162導入到負載鎖定室110的內部空間內的氣體通過第2搬運口112以及氣體排出管路52而排出的氣體量,設定成大於從基板S上方的空間通過間隙G而被排出到基板保持構造120下方的空間的氣體量。如此一來,可以很有效地抑制:微粒子從裝載室30通過第2搬運口112進入到負載鎖定室110的內部空間內。
基板保持構造120的側面與負載鎖定室110的內側面之間隙G的面積,係小於設在延長室140的底面144的開口142的截面積為佳。這樣的結構,係可以有助於減少來自泵浦150的微粒子通過間隙G到達基板S上方的空間而附著在基板S上。間隙G的面積,係小於負載鎖定室110與延長室140之間的連接部分146的截面積(在鉛直面中的截面積)為佳。這樣的結構,也可以有助於減少來自泵浦150的微粒子通過間隙G到達基板S上方的空間而附著在基板S上。
圖2、圖3、圖4以及圖5係顯示圖1所示的處理裝置的作動之例子。首先,氣體是從氣體導入部160導入(供給)到負載鎖定室110的內部空間,同時又可以利用泵浦150將該內部空間的氣體排出到負載鎖定室110的外部空間。此時,係可以將從氣體導入部160導入該內部空間的氣體的導入量,設定成大於泵浦150所達成之氣體的排出量,以使得該內部空間的壓力上昇。該內部空間的壓力達到大氣壓以上的話,就如圖2所示般地,將閥門50打開,並且可以開始利用氣體排出管路52將氣體予以排出。然後,可以利用搬運用機械人34將基板S從裝載室30搬運到負載鎖定室110的內部空間的基板保持構造120。
然後,如圖3所示般地,將閥門50關閉,可以利用驅動機構130來將基板保持構造120往上方驅動。又,在氣體被從氣體導入部160導入到負載鎖定室110的內部空間的狀態下,提高利用泵浦150將氣體從該內部空間排出的氣體量,來對於該內部空間進行減壓。然後,停止從氣體導入部160對於該內部空間導入氣體,並且可以更加提高泵浦150從該內部空間排出氣體的量。
將負載鎖定室110的內部空間的壓力充分地減壓之後,就如圖4所示般地,可以利用驅動機構130將基板保持構造120往下方驅動,直到抵達可將基板S往轉送室20進行搬運的高度為止。然後,如圖5所示般地,將閥門40打開,可以利用搬運用機械人22將基板S從負載鎖定室110的內部空間搬運到轉送室20,並且再搬運到減壓處理裝置10。然後,將閥門40關閉,並且在減壓處理裝置10中對於基板S進行加工處理。
然後,將閥門40打開,如圖5所示般地,可以利用搬運用機械人22將減壓處理裝置10中的基板S搬運到負載鎖定室110的內部空間。然後,可以將閥門40關閉。
然後,從氣體導入部160將氣體導入到負載鎖定室110的內部空間,並且可以利用泵浦150將該內部空間的氣體排出到負載鎖定室110的外部空間。這個時候,係可以將從氣體導入部160導入到該內部空間的氣體量設定成大於泵浦150所排出的氣體量,以使得該內部空間的壓力上昇。該內部空間的壓力上昇到達大氣壓以上的話,就如圖2所示般地,係可以打開閥門50並且開始利用氣體排出管路52來排出氣體。然後,可以利用搬運用機械人34將基板S從負載鎖定室110的內部空間的基板保持構造120搬運到裝載室30。然後,係可以將閥門50關閉,來停止利用氣體排出管路52排出氣體。
如圖1、圖3、圖4所示,基板保持構造120,係可以將基板S保持成:讓基板S的側面(外周面)之至少一部分與負載鎖定室110的內面相對向。此處,基板保持構造120係可以將基板S保持成:使得被其所保持的基板S的側面(外周面)之該至少一部分,係沿著與基板S的表面平行的方向,與負載鎖定室110的內面相對向。
如圖1~圖5所示,基板保持構造120,係可配置在負載鎖定室110的內部空間中的複數個位置。如圖1所示,該複數個位置,係可以包含:被基板保持構造120所保持的基板S的側面的一部分面對於氣體分散部162的位置。此處,被基板保持構造120所保持的基板S的側面(外周面)的該一部分,係可以沿著與基板S的表面平行的方向,面對於氣體分散部162。
此外,亦可將基板保持構造120製作成:如圖13A的例子所示般地,在沿著基板S的表面之表面方向(與XY平面平行的方向)上的基板保持構造120的對向面OS的尺寸DH,係小於在該表面方向上的基板S的尺寸DS。如圖13A、圖13B的例子所示般地,基板保持機構120的部分PP,在水平面(XY平面)內的既定方向(Y方向)上,係可以位於較對向面OS的外緣EE更內側的位置。利用與垂直於該水平面(XY平面)的既定方向(Y方向)保持平行的複數個平面(與YZ平面平行的複數個面)來進行截斷後之對向面OS的截面,都是彼此相同的形狀。
如圖14A的例子所示般地,被基板保持構造120所保持的基板S,係可以是矩形形狀。或者,如圖14B的例子所示般地,被基板保持構造120所保持的基板S,可以是具有用來表示基準方位的缺口部NT之圓形形狀。此外,被基板保持構造120所保持的基板S,也可以是別種的形狀。
圖6係顯示具備本發明的第2實施方式的負載鎖定裝置100之處理裝置的構成要件之示意圖。在第2實施方式中並未述及的事項都是遵循第1實施方式。第2實施方式的負載鎖定裝置100,負載鎖定室110的頂棚部,係包含:與基板S之外緣的內側領域相對向的部分601、以及與基板S的外緣相對向的部分602,而且部分601與基板S的距離係大於部分602與基板S的距離。
圖7係顯示具備本發明的第3實施方式的負載鎖定裝置100之處理裝置的構成要件之示意圖。在第3實施方式中並未述及的事項都是遵循第1實施方式。第3實施方式的負載鎖定裝置100,負載鎖定室110的頂棚部,係包含:與基板S之外緣的內側領域相對向的部分601、以及與基板S的外緣相對向的部分602,而且部分601與基板S的距離係大於部分602與基板S的距離。在第3實施方式中,部分601係製作成平滑的曲面。
圖8係顯示具備本發明的第4實施方式的負載鎖定裝置100之處理裝置的構成要件之示意圖。在第4實施方式中並未述及的事項都是遵循第1實施方式。在第4實施方式中,第1構件125,係波紋彎折翼形狀。波紋彎折翼形狀,係有助於用來抑制例如:橫跨在對向面OS與基板S之間的空間內的大型的渦流。
圖9係顯示本發明的第5實施方式的負載鎖定裝置100中的第1構件125之示意平面圖。圖10係顯示本發明的第5實施方式的負載鎖定裝置100中的第1構件125之示意側面圖。在第5實施方式中並未述及的事項都是遵循第1實施方式。在第5實施方式中,在基板S被基板保持構造120所保持的狀態下,位於較對向面OS的外緣EE更內側位置的部分PP,在既定方向DIR上,係位於較對向面OS的外緣EE更內側的位置,第1構件125,在與既定方向DIR正交的方向上,係被分割成複數個部分125a、125b。
本發明並不侷限於上述實施方式,只要是不脫離本發明的精神及範圍的話,都可以做各種的變更及變形。因此,佐以請求項來將本發明的範圍予以公開。
10:減壓處理裝置
20:轉送室
22:搬運用機械人
30:裝載室
32:濾清器
34:搬運用機械人
40:閥門
50:閥門
52:氣體排出管路
60:閥門
100:負載鎖定裝置
110:負載鎖定室
111:第1搬運口
112:第2搬運口
120:基板保持構造
122:連結構件
124:接觸部
125:第1構件
126:第2構件
130:驅動機構
140:延長室
142:開口
144:底面
145:頂棚面
146:連接部分
150:泵浦
160:氣體導入部
162:氣體分散部
164:流量調整閥門
S:基板
G:間隙
OS:對向面
LS:第1構件125的下表面
US:第2構件126的上表面
PP:部分
EE:外緣
[圖1]係顯示具備本發明的第1實施方式的負載鎖定裝置之處理裝置的構成要件之示意圖。
[圖2]係顯示具備本發明的第1實施方式的負載鎖定裝置之處理裝置的動作之例示圖。
[圖3]係顯示具備本發明的第1實施方式的負載鎖定裝置之處理裝置的動作之例示圖。
[圖4]係顯示具備本發明的第1實施方式的負載鎖定裝置之處理裝置的動作之例示圖。
[圖5]係顯示具備本發明的第1實施方式的負載鎖定裝置之處理裝置的動作之例示圖。
[圖6]係顯示具備本發明的第2實施方式的負載鎖定裝置之處理裝置的構成要件之示意圖。
[圖7]係顯示具備本發明的第3實施方式的負載鎖定裝置之處理裝置的構成要件之示意圖。
[圖8]係顯示具備本發明的第4實施方式的負載鎖定裝置之處理裝置的構成要件之示意圖。
[圖9]係顯示本發明的第5實施方式的負載鎖定裝置中的第1構件之示意平面圖。
[圖10]係顯示本發明的第1、第5實施方式的負載鎖定裝置中的基板保持構造之示意放大側面圖。
[圖11]係用來說明本發明的技術課題的說明圖。
[圖12]係用來說明本發明的技術課題的說明圖。
[圖13A]係顯示基板保持構造之例示圖。
[圖13B]係顯示圖13A的基板保持構造的第1構件或對向面的形狀之例示圖。
[圖14A]係顯示基板之一例的例示圖。
[圖14B]係顯示基板之其他例子的例示圖。
[圖15]係顯示負載鎖定室、延長室以及氣體分散部的配置平面圖。
10:減壓處理裝置
20:轉送室
22:搬運用機械人
30:裝載室
32:濾清器
34:搬運用機械人
40:閥門
50:閥門
52:氣體排出管路
60:閥門
100:負載鎖定裝置
110:負載鎖定室
111:第1搬運口
112:第2搬運口
120:基板保持構造
122:連結構件
124:接觸部
125:第1構件
126:第2構件
130:驅動機構
140:延長室
142:開口
144:底面
145:頂棚面
146:連接部分
150:泵浦
160:氣體導入部
162:氣體分散部
164:流量調整閥門
S:基板
G:間隙
OS:對向面
LS:第1構件125的下表面
US:第2構件126的上表面
Claims (25)
- 一種負載鎖定裝置,其係具備:負載鎖定室、以及在前述負載鎖定室中用來保持基板之基板保持構造之負載鎖定裝置,其特徵為:前述基板保持構造,係具有:與前述基板相對向的對向面,並且係製作成:可讓氣體流經過前述基板與前述對向面之間的空間,在利用前述基板保持構造來保持著前述基板的狀態下,較前述對向面的外緣更位於內側位置的部分與前述基板之距離,係大於前述對向面的前述外緣與前述基板之距離;前述基板保持構造,係以將前述基板的側面之至少一部與前述負載鎖定室的內面相對向的方式,來保持前述基板。
- 一種負載鎖定裝置,其係具備:負載鎖定室、以及在前述負載鎖定室中用來保持基板之基板保持構造之負載鎖定裝置,其特徵為:前述基板保持構造,係具有:與前述基板相對向的對向面,並且係製作成:可讓氣體流經過前述基板與前述對向面之間的空間,在利用前述基板保持構造來保持著前述基板的狀態下,較前述對向面的外緣更位於內側位置的部分與前述基板之距離,係大於前述對向面的前述外緣與前述基板之距離; 還具備:將氣體分散到前述負載鎖定室的內部空間之氣體分散部,前述基板保持構造,係以將前述基板的側面之至少一部與前述負載鎖定室的內面相對向的方式,來保持前述基板,可以配置前述基板保持構造的位置,係包含:被前述基板保持構造所保持的前述基板的側面的一部分與前述氣體分散部相對向的位置。
- 一種負載鎖定裝置,其係具備:負載鎖定室、以及在前述負載鎖定室中用來保持基板之基板保持構造之負載鎖定裝置,其特徵為:前述基板保持構造,係具有:與前述基板相對向的對向面,並且係製作成:可讓氣體流經過前述基板與前述對向面之間的空間,在利用前述基板保持構造來保持著前述基板的狀態下,較前述對向面的外緣更位於內側位置的部分與前述基板之距離,係大於前述對向面的前述外緣與前述基板之距離;在沿著前述基板的表面之表面方向上的前述對向面的尺寸,係小於在前述表面方向上的前述基板的尺寸。
- 一種負載鎖定裝置,其係具備:負載鎖定室、以及在前述負載鎖定室中用來保持基板之基板保持構造之負載鎖定裝置,其特徵為:前述基板保持構造,係具有:與前述基板相對向的對 向面,並且係製作成:可讓氣體流經過前述基板與前述對向面之間的空間,在利用前述基板保持構造來保持著前述基板的狀態下,較前述對向面的外緣更位於內側位置的部分與前述基板之距離,係大於前述對向面的前述外緣與前述基板之距離;前述部分,在水平面內的既定方向上,係位於較前述對向面的前述外緣更內側的位置,利用與垂直於前述水平面的前述既定方向保持平行的複數個平面來進行截斷後之前述對向面的截面,都是彼此相同的形狀。
- 一種負載鎖定裝置,其係具備:負載鎖定室、以及在前述負載鎖定室中用來保持基板之基板保持構造之負載鎖定裝置,其特徵為:前述基板保持構造,係具有:與前述基板相對向的對向面,並且係製作成:可讓氣體流經過前述基板與前述對向面之間的空間,在利用前述基板保持構造來保持著前述基板的狀態下,較前述對向面的外緣更位於內側位置的部分與前述基板之距離,係大於前述對向面的前述外緣與前述基板之距離;前述負載鎖定室,係具有:連接於與減壓處理裝置相連接的轉送室之第1搬運口、和連接於裝載室的第2搬運口; 前述負載鎖定裝置,還具備:被配置在:通過前述第1搬運口來將前述基板搬運到前述轉送室的狀態時之前述基板保持構造與前述轉送室之間的路徑的上方之氣體導入部;以及被配置成:經由前述基板保持構造的下方的空間來排出氣體之氣體排出部;前述氣體導入部,係包含:用來分散氣體之氣體分散部,前述氣體分散部,係被配置在與前述第2搬送口相對向的位置;前述氣體分散部,係具有:柱形狀部,而前述負載鎖定室的內側面,係與前述柱形狀部分開,並且包含沿著前述柱形狀部之彎曲面。
- 如請求項5所述之負載鎖定裝置,其中,前述柱形狀部,係圓柱形狀,而前述彎曲面係構成圓筒面的一部分。
- 一種負載鎖定裝置,其係具備:負載鎖定室、以及在前述負載鎖定室中用來保持基板之基板保持構造之負載鎖定裝置,其特徵為:前述基板保持構造,係具有:與前述基板相對向的對向面,並且係製作成:可讓氣體流經過前述基板與前述對向面之間的空間,在利用前述基板保持構造來保持著前述基板的狀態下,較前述對向面的外緣更位於內側位置的部分與前述基 板之距離,係大於前述對向面的前述外緣與前述基板之距離;前述負載鎖定室,係具有:連接於與減壓處理裝置相連接的轉送室之第1搬運口、和連接於裝載室的第2搬運口;前述負載鎖定裝置,還具備:被配置在:通過前述第1搬運口來將前述基板搬運到前述轉送室的狀態時之前述基板保持構造與前述轉送室之間的路徑的上方之氣體導入部;以及被配置成:經由前述基板保持構造的下方的空間來排出氣體之氣體排出部;前述氣體導入部,係包含:用來分散氣體之氣體分散部,前述氣體分散部,係被配置在與前述第2搬送口相對向的位置;前述氣體導入部以及前述氣體排出部係被控制成:以被前述基板保持構造所保持的前述基板被配置於較前述氣體分散部的中心軸更高位置的狀態,來執行降低前述負載鎖定室的壓力之動作;以及以被前述基板保持構造所保持的前述基板被配置於較前述氣體分散部的中心軸更低位置的狀態,來執行降低前述負載鎖定室的壓力之動作。
- 如請求項1至7中任一項所述之負載鎖定裝置,其中,前述基板保持構造,係包含:具有前述對向面之第1構件、以及具有與前述第1構件的下表面相對向的 上表面之第2構件。
- 如請求項8所述之負載鎖定裝置,其中,前述基板保持構造,還包含:以支承前述基板的方式來與前述基板進行接觸之複數個接觸部,前述第2構件,係支承前述第1構件以及前述複數個接觸部。
- 如請求項9所述之負載鎖定裝置,其中,前述第2構件的前述上表面,係沿著前述第1構件的前述下表面之形狀。
- 如請求項9所述之負載鎖定裝置,其中,前述第1構件,係波紋彎折翼形狀。
- 如請求項9所述之負載鎖定裝置,其中,前述的部分,在既定方向上,係位於較對向面的外緣更內側的位置,前述第1構件,在與前述既定方向正交的方向上,係被分割成複數個部分。
- 如請求項1至4中任一項所述之負載鎖定裝置,其中,前述負載鎖定室,係具有:連接於與減壓處理裝置相連接的轉送室之第1搬運口、和連接於裝載室的第2搬運口;前述負載鎖定裝置,還具備被配置在:通過前述第1搬運口來將前述基板搬運到前述轉送室的狀態時之前述基板保持構造與前述轉送室之間的路徑的上方之氣體導入部;以及被配置成:經由前述基板保持構造的下方的空間來排 出氣體之氣體排出部。
- 如請求項13所述之負載鎖定裝置,其中,前述第1搬送口的高度,係低於前述第2搬送口的高度。
- 如請求項13所述之負載鎖定裝置,其中,前述氣體導入部,係包含:用來分散氣體之氣體分散部,前述氣體分散部,係被配置在與前述第2搬送口相對向的位置。
- 如請求項15所述之負載鎖定裝置,其中,前述氣體分散部,係具有:柱形狀部,而前述負載鎖定室的內側面,係與前述柱形狀部分開,並且包含沿著前述柱形狀部之彎曲面。
- 如請求項16所述之負載鎖定裝置,其中,前述柱形狀部,係圓柱形狀,而前述彎曲面係構成圓筒面的一部分。
- 如請求項15所述之負載鎖定裝置,其中,前述氣體導入部以及前述氣體排出部係被控制成:以被前述基板保持構造所保持的前述基板被配置於較前述氣體分散部的中心軸更高位置的狀態,來執行降低前述負載鎖定室的壓力之動作;以及以被前述基板保持構造所保持的前述基板被配置於較前述氣體分散部的中心軸更低位置的狀態,來執行降低前述負載鎖定室的壓力之動作。
- 如請求項13所述之負載鎖定裝置,其 中,還具備被配置成:從前述第2搬送口附近的空間將氣體予以排出之氣體排出管路。
- 如請求項5至7中任一項所述之負載鎖定裝置,其中,前述基板保持構造,係以將前述基板的側面之至少一部與前述負載鎖定室的內面相對向的方式,來保持前述基板。
- 如請求項5至7中任一項所述之負載鎖定裝置,其中,前述基板保持構造,係以將前述基板的側面之至少一部與前述負載鎖定室的內面相對向的方式,來保持前述基板,可以配置前述基板保持構造的位置,係包含:被前述基板保持構造所保持的前述基板的側面的一部分與前述氣體分散部相對向的位置。
- 如請求項5至7中任一項所述之負載鎖定裝置,其中,在沿著前述基板的表面之表面方向上的前述對向面的尺寸,係小於在前述表面方向上的前述基板的尺寸。
- 如請求項5至7中任一項所述之負載鎖定裝置,其中,前述部分,在水平面內的既定方向上,係位於較前述對向面的前述外緣更內側的位置,利用與垂直於前述水平面的前述既定方向保持平行的複數個平面來進行截斷後之前述對向面的截面,都是彼此相同的形狀。
- 如請求項1至7中任一項所述之負載鎖定 裝置,其中,被前述基板保持構造所保持的前述基板,係矩形形狀。
- 如請求項1至7中任一項所述之負載鎖定裝置,其中,被前述基板保持構造所保持的前述基板,係具有:用來表示基準方位的缺口部之圓形形狀。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
WOPCT/JP2019/035248 | 2019-09-06 | ||
PCT/JP2019/035248 WO2021044623A1 (ja) | 2019-09-06 | 2019-09-06 | ロードロック装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202117899A TW202117899A (zh) | 2021-05-01 |
TWI776224B true TWI776224B (zh) | 2022-09-01 |
Family
ID=74200175
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109130338A TWI776224B (zh) | 2019-09-06 | 2020-09-04 | 負載鎖定裝置 |
TW111128248A TWI819723B (zh) | 2019-09-06 | 2020-09-04 | 負載鎖定裝置之使用方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111128248A TWI819723B (zh) | 2019-09-06 | 2020-09-04 | 負載鎖定裝置之使用方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20220139761A1 (zh) |
EP (1) | EP4027371A4 (zh) |
JP (3) | JP6818930B1 (zh) |
KR (1) | KR20220025880A (zh) |
CN (1) | CN114175225A (zh) |
TW (2) | TWI776224B (zh) |
WO (2) | WO2021044623A1 (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004349332A (ja) * | 2003-05-20 | 2004-12-09 | Hitachi High-Technologies Corp | ロードロック装置 |
JP2010165841A (ja) * | 2009-01-15 | 2010-07-29 | Tokyo Electron Ltd | 基板冷却ステージ及び半導体製造装置 |
WO2012077547A1 (ja) * | 2010-12-09 | 2012-06-14 | 東京エレクトロン株式会社 | ロードロック装置 |
TW201814804A (zh) * | 2016-09-28 | 2018-04-16 | 日商國際電氣股份有限公司 | 基板處理裝置、半導體裝置之製造方法及記錄媒體 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3276382B2 (ja) | 1991-11-21 | 2002-04-22 | 東京エレクトロン株式会社 | 真空処理装置および真空処理方法 |
JP2000126581A (ja) | 1998-10-29 | 2000-05-09 | Kokusai Electric Co Ltd | ロードロック装置 |
JP3570930B2 (ja) * | 1999-09-02 | 2004-09-29 | 日本エー・エス・エム株式会社 | ロードロックチャンバーへのガス導入装置 |
JP2006093543A (ja) * | 2004-09-27 | 2006-04-06 | Tokyo Electron Ltd | 熱処理装置 |
US20100270004A1 (en) * | 2005-05-12 | 2010-10-28 | Landess James D | Tailored profile pedestal for thermo-elastically stable cooling or heating of substrates |
JP5291965B2 (ja) * | 2008-03-25 | 2013-09-18 | 大日本スクリーン製造株式会社 | 熱処理装置 |
US8033771B1 (en) * | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
JP5462946B2 (ja) * | 2010-06-30 | 2014-04-02 | 株式会社アルバック | 基板処理装置及び基板冷却方法 |
WO2016118285A1 (en) * | 2015-01-23 | 2016-07-28 | Applied Materials, Inc. | New susceptor design to eliminate deposition valleys in the wafer |
US10490437B2 (en) * | 2015-04-07 | 2019-11-26 | Sumco Corporation | Susceptor, vapor deposition apparatus, vapor deposition method and epitaxial silicon wafer |
US9831110B2 (en) * | 2015-07-30 | 2017-11-28 | Lam Research Corporation | Vision-based wafer notch position measurement |
JP6598242B2 (ja) | 2015-08-19 | 2019-10-30 | 芝浦メカトロニクス株式会社 | 基板処理装置、および基板処理方法 |
KR102135409B1 (ko) * | 2016-11-09 | 2020-07-17 | 주식회사 원익아이피에스 | 로드락챔버 및 이를 포함하는 기판처리장치 |
US10302976B2 (en) * | 2017-05-09 | 2019-05-28 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method and device for releasing film layer stress of array substrate |
-
2019
- 2019-09-06 WO PCT/JP2019/035248 patent/WO2021044623A1/ja active Application Filing
-
2020
- 2020-09-01 JP JP2020146982A patent/JP6818930B1/ja active Active
- 2020-09-02 WO PCT/JP2020/033161 patent/WO2021045070A1/ja unknown
- 2020-09-02 CN CN202080051124.6A patent/CN114175225A/zh active Pending
- 2020-09-02 EP EP20861168.1A patent/EP4027371A4/en active Pending
- 2020-09-02 KR KR1020227003149A patent/KR20220025880A/ko active IP Right Grant
- 2020-09-04 TW TW109130338A patent/TWI776224B/zh active
- 2020-09-04 TW TW111128248A patent/TWI819723B/zh active
- 2020-09-15 JP JP2020154842A patent/JP6842804B1/ja active Active
-
2021
- 2021-02-17 JP JP2021023675A patent/JP7473493B2/ja active Active
-
2022
- 2022-01-14 US US17/575,690 patent/US20220139761A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004349332A (ja) * | 2003-05-20 | 2004-12-09 | Hitachi High-Technologies Corp | ロードロック装置 |
JP2010165841A (ja) * | 2009-01-15 | 2010-07-29 | Tokyo Electron Ltd | 基板冷却ステージ及び半導体製造装置 |
WO2012077547A1 (ja) * | 2010-12-09 | 2012-06-14 | 東京エレクトロン株式会社 | ロードロック装置 |
TW201814804A (zh) * | 2016-09-28 | 2018-04-16 | 日商國際電氣股份有限公司 | 基板處理裝置、半導體裝置之製造方法及記錄媒體 |
Also Published As
Publication number | Publication date |
---|---|
JP7473493B2 (ja) | 2024-04-23 |
EP4027371A4 (en) | 2023-10-04 |
TW202117899A (zh) | 2021-05-01 |
EP4027371A1 (en) | 2022-07-13 |
CN114175225A (zh) | 2022-03-11 |
JP2021044551A (ja) | 2021-03-18 |
TW202249155A (zh) | 2022-12-16 |
WO2021045070A1 (ja) | 2021-03-11 |
JP6818930B1 (ja) | 2021-01-27 |
JP2021082834A (ja) | 2021-05-27 |
TWI819723B (zh) | 2023-10-21 |
JP6842804B1 (ja) | 2021-03-17 |
KR20220025880A (ko) | 2022-03-03 |
JP2021044545A (ja) | 2021-03-18 |
US20220139761A1 (en) | 2022-05-05 |
WO2021044623A1 (ja) | 2021-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108369905B (zh) | 基板清洗装置 | |
US8029227B2 (en) | Dust resistant load port apparatus and mini-environment system | |
TWI776224B (zh) | 負載鎖定裝置 | |
TWI754371B (zh) | 負載鎖定裝置 | |
US8707899B2 (en) | Plasma processing apparatus | |
KR101019843B1 (ko) | 기밀 모듈 및 상기 기밀 모듈의 배기 방법 | |
JPH02305740A (ja) | 基板搬送装置 | |
CN113113326A (zh) | 半导体制程机台 | |
TW202235674A (zh) | 用於傳遞氣體至製程腔室的設備及系統 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent |