TWI775328B - Substrate processing apparatus, manufacturing method and program of semiconductor device - Google Patents
Substrate processing apparatus, manufacturing method and program of semiconductor device Download PDFInfo
- Publication number
- TWI775328B TWI775328B TW110106856A TW110106856A TWI775328B TW I775328 B TWI775328 B TW I775328B TW 110106856 A TW110106856 A TW 110106856A TW 110106856 A TW110106856 A TW 110106856A TW I775328 B TWI775328 B TW I775328B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing
- substrate
- gas
- inert gas
- holding table
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 243
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000007789 gas Substances 0.000 claims abstract description 172
- 239000011261 inert gas Substances 0.000 claims abstract description 113
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 56
- 238000002156 mixing Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 88
- 230000008569 process Effects 0.000 claims description 86
- 230000002093 peripheral effect Effects 0.000 claims description 27
- 230000007246 mechanism Effects 0.000 description 18
- 239000001257 hydrogen Substances 0.000 description 16
- 229910052739 hydrogen Inorganic materials 0.000 description 16
- 238000000137 annealing Methods 0.000 description 13
- 238000002485 combustion reaction Methods 0.000 description 9
- 230000003028 elevating effect Effects 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
基板處理裝置係具有: 基板保持台,其係可昇降於處理容器的內部; 遮蔽壁,其係包圍上昇後的狀態的基板保持台的上面與相對於該上面的對向面之間的處理空間、及上昇後的狀態的基板保持台的外周; 處理氣體供給口,其係供給含氫氣體的處理氣體至處理空間; 惰性氣體供給口,其係供給惰性氣體至遮蔽壁與處理容器的內壁之間的空間;及 氣體混合部,其係從處理空間出去的處理氣體會與惰性氣體在處理容器的內部被混合。The substrate processing apparatus has: a substrate holding table, which can be lifted and lowered inside the processing container; a shielding wall that surrounds the processing space between the upper surface of the substrate holding table in the raised state and the facing surface with respect to the upper surface, and the outer periphery of the substrate holding table in the raised state; a processing gas supply port, which supplies the processing gas containing hydrogen gas to the processing space; an inert gas supply port for supplying an inert gas to the space between the shielding wall and the inner wall of the processing container; and In the gas mixing section, the processing gas discharged from the processing space and the inert gas are mixed inside the processing container.
Description
本案是有關基板處理裝置,半導體裝置的製造方法及程式。This case relates to a substrate processing apparatus, a manufacturing method and a program of a semiconductor device.
揭示具有可退火處理基板的處理室的基板處理裝置(參照專利文獻1)。 先前技術文獻 專利文獻A substrate processing apparatus having a processing chamber capable of annealing a substrate is disclosed (refer to Patent Document 1). prior art literature Patent Literature
專利文獻1:特開2019-169663號公報Patent Document 1: Japanese Patent Laid-Open No. 2019-169663
(發明所欲解決的課題)(The problem to be solved by the invention)
在半導體的製造工程中,有在氫氣體氣氛的各種的壓力下對於基板進行氫退火處理的情形。此時,有只使用氫的情況,或使用混合氦、氮、氬及氫的氣體的情況。In a semiconductor manufacturing process, a hydrogen annealing process may be performed on a substrate under various pressures of a hydrogen gas atmosphere. At this time, only hydrogen is used, or a gas in which helium, nitrogen, argon, and hydrogen are mixed is used.
在處理裝置中,一旦可燃氣體、助燃氣體、著火源的條件備齊,則發生著火、燃燒。在微減壓下或大氣壓下進行使用高濃度的氫氣體的處理時,某些的因素,在處理室內的氣體著火時,處理室內的氣體會膨脹而處理室內被加壓。若在減壓下,則容易應付,使在膨脹時不會超越加壓限界值,但為了在微減壓下或大氣壓下處理,需要將處理室全體設為高耐壓規格等充分的安全對策。In the processing device, ignition and combustion occur when the conditions for the combustible gas, the combustion-supporting gas, and the ignition source are satisfied. When the process using high-concentration hydrogen gas is performed under slightly reduced pressure or atmospheric pressure, when the gas in the process chamber catches fire, the gas in the process chamber expands and the process chamber is pressurized. If it is under reduced pressure, it is easy to cope so that the pressure limit value is not exceeded during expansion. However, in order to process under slightly reduced pressure or atmospheric pressure, sufficient safety measures such as setting the entire processing chamber to a high withstand pressure specification are required. .
若縮小處理室的容積,在狹窄的區域對於基板處理,則實施安全對策的範圍會變小,容易應付,但依裝置構成,有用以搬送基板的空間不夠充分、存取困難的情形。If the volume of the processing chamber is reduced and the substrate is processed in a narrow area, the scope of safety measures will be reduced and it is easy to deal with.
本案是以使在微減壓下或大氣壓下對於基板使用高濃度的氫氣體的處理容易為目的。 (用以解決課題的手段)The present invention aims to facilitate the treatment of the substrate using a high-concentration hydrogen gas under slightly reduced pressure or atmospheric pressure. (means to solve the problem)
本案的基板處理裝置,係具有: 基板保持台,其係可昇降於處理容器的內部; 遮蔽壁,其係包圍上昇後的狀態的前述基板保持台的上面與相對於該上面的對向面之間的處理空間、及上昇後的狀態的前述基板保持台的外周; 處理氣體供給口,其係供給含氫氣體的處理氣體至前述處理空間; 惰性氣體供給口,其係供給惰性氣體至前述遮蔽壁與前述處理容器的內壁之間的空間; 氣體混合部,其係從前述處理空間出去的前述處理氣體會在前述處理容器的內部與前述惰性氣體混合;及 處理氣體流路,其係被形成於上昇後的狀態的前述基板保持台的外周面與前述遮蔽壁的內周面之間,被構成為前述處理氣體會從前述處理空間往前述氣體混合部流動。 [發明的效果]The substrate processing apparatus of this case is provided with: a substrate holding table, which can be lifted and lowered inside the processing container; a shielding wall that surrounds the processing space between the upper surface of the substrate holding table in the raised state and the facing surface with respect to the upper surface, and the outer periphery of the substrate holding table in the raised state; a processing gas supply port, which supplies a processing gas containing hydrogen gas to the processing space; an inert gas supply port for supplying an inert gas to the space between the shielding wall and the inner wall of the processing container; a gas mixing unit, wherein the processing gas exiting the processing space is mixed with the inert gas inside the processing container; and The processing gas flow path is formed between the outer peripheral surface of the substrate holding table in the ascended state and the inner peripheral surface of the shielding wall, and is configured such that the processing gas flows from the processing space to the gas mixing portion . [Effect of invention]
若根據本案,則可使在微減壓下或大氣壓下對於基板使用高濃度的氫氣體的處理容易。According to this aspect, it is possible to facilitate the treatment of the substrate using a high-concentration hydrogen gas under slightly reduced pressure or atmospheric pressure.
以下,根據圖面說明有關用以實施本案的形態。在各圖面中,對於相同或等效的構成要素及部分附上相同的參照符號。又,圖面的尺寸比率是基於說明的方便起見被誇張,有與實際的比率不同的情況。又,以圖面的上方向作為上方或上部,以下方向作為下方或下部說明。又,本實施形態中記載的壓力是全部意思氣壓。Hereinafter, the form for implementing the present invention will be described with reference to the drawings. In each drawing, the same reference numerals are attached to the same or equivalent components and parts. In addition, the dimension ratio of a drawing is exaggerated for the convenience of description, and it may differ from an actual ratio. In addition, the upper direction in the drawing is referred to as upper or upper, and the following direction is referred to as lower or lower. In addition, the pressure described in this embodiment means all air pressure.
[第1實施形態]
在圖1、圖2中,本實施形態的基板處理裝置10是進行半導體裝置的製造之一工程。此基板處理裝置10是具有基板保持台12、遮蔽壁14、處理氣體供給口16、惰性氣體供給口18及氣體混合部22。[1st Embodiment]
In FIGS. 1 and 2 , the
(基板保持台)
基板保持台12是被設在處理容器24的內部亦即處理室,可在該處理容器24內昇降的例如圓板狀的基座。在此,處理容器24是被構成為例如橫剖面為圓形且扁平的密閉容器。又,處理容器24是例如藉由鋁(Al)或不鏽鋼(SUS)等的金屬材料或石英所構成。在處理容器24內是形成搬送基板30的搬送空間26。並且,在處理容器24內是如後述般,在基板保持台12的上昇時,形成處理作為基板30的矽晶圓等的處理空間32。處理容器24是以上部容器24a及下部容器24b所構成。下部容器24b的側面是設有與閘閥34鄰接的基板搬出入口24d。基板30會經由基板搬出入口24d來移送於下部容器24b內的搬送空間26與真空搬送室(未圖示)之間。在下部容器24b的底部是設有複數個昇降銷36。(Substrate Holder)
The substrate holding table 12 is, for example, a disc-shaped susceptor that is provided inside the
在基板保持台12的上面38是載置基板30的載置面38a會例如被成凹狀。在載置面38a的徑方向外側是設有不載置基板30的外側上面38b。載置面38a是在基板保持台12的上面38例如被設成凹狀。亦即,基板保持台12的上面38是具有載置面38a與外側上面38b。On the
將基板30配置於載置面38a時,外側上面38b是被構成為與基板30的上面大略面一致。藉此,外側上面38b是可使往基板30的外周側的處理氣體的供給量接近往基板30的中心側的處理氣體的供給量接近。基板保持台12的外周12b的下部是設有伸出部12c。伸出部12c是比外周12b更凸緣狀地突出至徑方向外側。When the
另外,在基板保持台12是亦可設置作為加熱部的第1加熱器41。藉由設置第1加熱器41,可加熱基板30,使被形成於基板30上的膜的品質提升。又,第1加熱器41是被構成連接至溫度控制部40,可控制溫度。溫度控制部40是構成可經由訊號線來對後述的控制器44(圖9)收發溫度資料。In addition, the substrate holding table 12 may be provided with a
在基板保持台12中,昇降銷36貫通的貫通孔12a會分別設在與昇降銷36對應的位置。又,亦可在基板保持台12設置測定被形成於基板30上的膜的膜厚的膜厚監測器(未圖示)。該情況,膜厚監測器是經由訊號線來連接至膜厚計。在膜厚計產生的膜厚值(膜厚資料)是構成可經由訊號線來對後述的控制器44(圖9)收發訊號。In the substrate holding table 12 , the through
基板保持台12是例如藉由1根的傳動軸46來支撐。傳動軸46是貫通處理容器24的底部,進一步在處理容器24的外部連接至昇降機構48。藉由使昇降機構48作動而使傳動軸46及基板保持台12昇降,可使被載置於載置面38a上的基板30昇降。另外,傳動軸46的下端部的周圍是藉由波紋管50所覆蓋,處理容器24內是被保持氣密。昇降機構48是被構成可對於後述的控制器44收發基板保持台12的高度資料。The substrate holding table 12 is supported by, for example, one
如圖1所示般,在基板30的搬送時,基板保持台12是下降為載置面38a會成為基板搬出入口24d的位置(亦即搬送位置),在基板30的處理時,如圖2所示般,基板30會上昇至處理容器24內的處理位置(亦即處理位置)。As shown in FIG. 1 , when the
具體而言,當基板保持台12下降至搬送位置時,昇降銷36的上端部從載置面38a突出而從下方頂起基板30,舉起至基板保持台12的上面38具體而言比外側上面38b更高的位置的狀態下支撐基板30。並且,在基板保持台12上昇至處理位置時,昇降銷36會從載置面38a埋沒,載置面38a會從下方支撐基板30。另外,昇降銷36是與基板30直接觸,因此最好例如以石英或礬土等的材質所形成。另外,亦可構成為在昇降銷36設置昇降機構,使基板保持台12與昇降銷36相對地移動。Specifically, when the substrate holding table 12 is lowered to the transfer position, the upper ends of the
(遮蔽壁)
在圖2、圖3中,遮蔽壁14是作為包圍上昇後的狀態的基板保持台12的上面38與相對於該上面38的對向面52之間的處理空間32、及上昇後的狀態的基板保持台12的外周12b的部位而設。實際上是在載置面38a載置基板30而處理,因此處理空間32是被形成於被載於載置面38a的基板30的上面與對向於該上面的對向面52之間。(shielding wall)
In FIGS. 2 and 3 , the
遮蔽壁14是例如一體設於後述的淋浴頭54。具體而言,遮蔽壁14是作為從淋浴頭54的徑方向外側端部往下方延伸成圓筒狀的部位而設。在基板保持台12上昇至處理位置的狀態中,包含遮蔽壁14的淋浴頭54是不接觸於基板30及基板保持台12,在被載於載置面38a的基板30的上面與對向於該上面的對向面52之間形成處理空間32。並且,在遮蔽壁14的內周面與基板保持台12的外周12b之間、及遮蔽壁14的下端與基板保持台12的伸出部12c之間是形成有處理氣體流路56。處理氣體流路56是引導被供給至處理空間32的包含氫氣體的處理氣體從該處理空間32出去而與惰性氣體合流的位置為止的流路。換言之,處理氣體流路56是使處理空間32與後述的氣體混合部22之間連通,構成從處理空間32朝向氣體混合部22流動處理氣體的流路。The shielding
又,基板保持台12是在上昇至處理位置的狀態中,基板保持台12的下端位置會上昇為比遮蔽壁14的下端更低的高度。在本實施形態中,僅伸出部12c的高度方向的寬度(厚度)及遮蔽壁14的下端與伸出部12c之間的處理氣體流路56的寬度的合計的長度,基板保持台12上昇成為基板保持台12的下端位置比遮蔽壁14的下端更低的狀態。藉由將上昇至處理位置的狀態的基板保持台12的下端與遮蔽壁的下端的位置關係設為如此,從處理氣體流路56流出的處理氣體不會滯留於遮蔽壁14的內側,可使與從後述的惰性氣體供給口18供給的惰性氣體的流動直接合流。In addition, when the substrate holding table 12 is raised to the processing position, the lower end position of the substrate holding table 12 is raised to a height lower than the lower end of the shielding
(處理氣體供給口)
在圖1~圖3中,處理氣體供給口16是供給含氫氣體的處理氣體至處理空間32的部位。處理氣體供給口16是連接作為對於處理氣體的流量控制裝置的MFC(Mass Flow Controller)58及作為開閉閥的處理氣體用閥60。藉由MFC58、處理氣體用閥60及處理氣體供給口16來構成處理氣體供給部(處理氣體供給系)。(Processing gas supply port)
In FIGS. 1 to 3 , the processing
處理空間32的處理氣體中的氫氣體的濃度為4%以上。本實施形態的處理氣體中的氫氣體的濃度亦可為100%。此情況,從惰性氣體供給口18供給至處理容器24內的惰性氣體的流量是處理氣體的24倍以上。藉此,可將在氣體混合部22的氫氣體的濃度形成未滿4%。The concentration of hydrogen gas in the processing gas in the
藉由將氣體混合部22的氫氣體的濃度設為未滿4%,即使發生氫氣體與氧的混合時,也可防止對氫氣體的著火所造成的急劇的燃燒。換言之,藉由採用本實施形態的裝置構成,即使將被供給至處理空間32的處理氣體中的氫氣體的濃度設為4%以上時,也可防止著火所造成的急劇的燃燒。將被供給至處理空間32的處理氣體中的氫氣體的濃度設為100%時,由於氫氣體的洩漏等所造成的氫氣體與氧的混合發生的可能性更高,因此本實施形態的裝置構成的採用是更合適。另外,若混合部22的氫氣體的濃度為未滿4%,則最好是儘可能低,但稀釋所必要的惰性氣體的供給可能的流量是有實質上的極限,因此設為0.1%以上的範圍為適當。By setting the concentration of hydrogen gas in the
處理氣體供給口16是被形成於延伸於上下方向的管狀的支撐軸(淋浴頭)62。支撐軸(淋浴頭)62是貫通處理容器24的頂面24e。The processing
此處理氣體供給口16是藉由被設在對向面52的單數或複數的處理氣體噴出孔54a所構成。具體而言,處理氣體供給口16是藉由淋浴頭54所構成。此淋浴頭54是被設在處理容器24內,被構成可使從處理氣體供給口16供給的處理氣體分散而供給至處理空間32。亦可將淋浴頭54改稱為「氣體分散部」。在淋浴頭54中,相對於基板保持台12的上面38的對向面52是設有複數的處理氣體噴出孔54a。處理氣體噴出孔54a是被配置於對向面52的全體。若將設有處理氣體噴出孔54a的部位稱為多孔板64,則多孔板64的下面為對向面52。The processing
淋浴頭54是具有:多孔板64、位於多孔板64的上方的蓋66、被夾於多孔板64與蓋66之間的間隔件65、及藉由多孔板64、蓋66及間隔件65所包圍的緩衝空間67。蓋66是設有用以加熱處理氣體的第2加熱器42。又,淋浴頭54是在處理容器24內離開該處理容器24的頂面24e而配置。具體而言,從處理氣體供給口16導入的處理氣體是被供給至淋浴頭54內的緩衝空間67,從該緩衝空間67通過多孔板64的複數的處理氣體噴出孔54a來廣泛分散供給至處理空間32。淋浴頭54的多孔板64是例如以石英、礬土、不鏽鋼、鋁等的材料所構成。The
另外,形成被供給的氣體的流動的氣導(未圖示)亦可設在緩衝空間67。氣導是例如被設在蓋66的下面,其形狀是以處理氣體供給口16開口於緩衝空間67的部位為中心,隨著朝向基板30的下方而擴徑的圓錐形狀。In addition, an air guide (not shown) that forms the flow of the supplied gas may be provided in the
(惰性氣體供給口)
惰性氣體供給口18是在遮蔽壁14與處理容器24的內壁24c之間的空間供給惰性氣體的部位。惰性氣體是例如可使用氮氣體。惰性氣體供給口18是連接作為對於惰性氣體的流量控制裝置的MFC68及惰性氣體用閥70。藉由MFC68、惰性氣體用閥70及惰性氣體供給口18來構成惰性氣體供給部(惰性氣體供給系)。(Inert gas supply port)
The inert
從惰性氣體供給口18供給至處理容器24內的惰性氣體的流量是被調整為氣體混合部22的氫氣體的濃度會成為例如未滿4%。The flow rate of the inert gas supplied from the inert
惰性氣體供給口18是至少被設在處理容器24的頂面24e的比淋浴頭54的外緣正上方更中央側,作為一例。具體而言,惰性氣體供給口18是在處理容器24的頂面24e的中央部的淋浴頭54的支撐軸(淋浴頭)62的外側與該支撐軸(淋浴頭)62同心狀地設置。換言之,淋浴頭54的支撐軸(淋浴頭)62是***通於惰性氣體供給口18。The inert
又,惰性氣體供給口18是在處理容器24內的遮蔽壁14的外側且內壁24c的內側,被設在遮蔽壁14的上端14a的位置或比該上端更高的位置。In addition, the inert
惰性氣體是被構成為從惰性氣體供給口18供給至淋浴頭54的上面與處理容器24的頂面24e之間,到達遮蔽壁14與處理容器24的內壁24c之間的空間。The inert gas is configured to be supplied from the inert
另外,惰性氣體供給口18的配置是不被限於圖1~圖3所示的例子。如圖4所示般,惰性氣體供給口18是亦可例如沿著處理容器24的頂面24e的淋浴頭54的外緣來設置複數個於周方向。此周方向是淋浴頭54的周方向。此複數的惰性氣體供給口18是在周方向均等地設置,或亦可在周方向不均等地設置。In addition, the arrangement|positioning of the inert
(氣體混合部)
在圖2、圖3中,氣體混合部22是從處理空間32出去的處理氣體會與惰性氣體混合的部位。含氫氣體的處理氣體是藉由與惰性氣體混合而被稀釋。具體而言,遮蔽壁14與處理容器24的內壁24c之間的空間是從惰性氣體供給口18供給的惰性氣體會從上方朝向下方流動。處理氣體是從處理空間32出去而穿過遮蔽壁14與基板保持台12之間的處理氣體流路56時,與惰性氣體合流,與該惰性氣體混合。亦即,處理容器24的內部之中,從處理氣體與惰性氣體的合流部,下方的空間會成為氣體混合部22。(Gas Mixing Section)
In FIGS. 2 and 3 , the
(排氣部)
本案的基板處理裝置10是更具有排氣部(排氣系)。此排氣部是例如設在下部容器24b。具體而言,在下部容器24b的內壁24c設有用以將處理容器24的氣氛排氣的排氣口74。從處理容器24的外側對於排氣口74連接排氣管76的上游端。在排氣管76中,例如從上游側依序設有作為壓力調整器(壓力調整部)的APC(Auto Pressure Controller)78、作為開閉閥的排氣閥80、作為真空排氣裝置的真空泵82。藉由排氣口74、排氣管76、APC78及排氣閥80來構成排氣部。又,排氣部是亦可更含有真空泵82。(exhaust part)
The
藉由控制此排氣部的APC78及處理氣體供給部的MFC58,處理空間32的壓力是被調整成為大氣壓或相對於大氣壓微減壓。微減壓的範圍是例如「220Torr以上,未滿大氣壓」。這是在燃燒上限濃度(75%)的氫氣體發生燃燒下急劇地體積膨脹時,處理空間32內的壓力有超過大氣壓的可能性的範圍。亦即,在如此的壓力範圍,本實施形態的裝置構成為了確保安全性有用。又,微減壓的範圍是例如亦可設為「300Torr以上,未滿大氣壓」。這是藉由對於被形成於基板上的金屬膜或金屬配線的氫退火處理,可取得實用性的效果的範圍。另外,亦可因應所需,將處理空間32的壓力設為比大氣壓更大。By controlling the
(控制部)
本案的基板處理裝置10是如圖5所示般,具有作為控制部的控制器44。控制器44是被構成為經由未圖示的訊號線來分別控制閘閥34、昇降機構48、APC78、真空泵82、第1加熱器41、第2加熱器42、處理氣體用閥60、惰性氣體用閥70及排氣閥80。又,在圖5中雖省略,但實際控制器44是被構成為針對圖1所示的MFC58、處理氣體用閥60、MFC68及惰性氣體用閥70也分別控制。(control unit)
As shown in FIG. 5 , the
如圖5所示般,控制部(控制手段)的控制器44是被構成為具備CPU(Central Processing Unit)84a、RAM(Random Access Memory)84b、記憶裝置84c、I/O埠84d的電腦。RAM84b、記憶裝置84c、I/O埠84d是被構成為可經由內部匯流排84e來與CPU84a交換資料。控制器44是連接被構成為例如觸控面板或顯示器等的輸出入裝置86。As shown in FIG. 5, the controller 44 of the control unit (control means) is a computer including a CPU (Central Processing Unit) 84a, a RAM (Random Access Memory) 84b, a
記憶裝置84c是例如以快閃記憶體、HDD (Hard Disk Drive)等所構成。在記憶裝置84c內是可讀出地儲存有控制基板處理裝置的動作的控制程式或記載後述的基板處理的程序或條件等的程式處方等。製程處方是被組合成可使後述的基板處理工程的各程序實行於控制器44,取得預定的結果者,作為程式機能。以下,亦將此程式處方或控制程式等總簡稱為程式。另外,在本說明書中稱程式時,有只包含程式處方單體時,只包含控制程式單體時,或包含其雙方時。又,RAM84b是被構成為暫時性地保持藉由CPU84a所讀出的程式或資料等的記憶區域(工作區域)。The
I/O埠84d是被連接至上述的閘閥34、昇降機構48、APC78、真空泵82、第1加熱器41、第2加熱器42、處理氣體用閥60、惰性氣體用閥70、排氣閥80、MFC58、處理氣體用閥60、MFC68及惰性氣體用閥70等。The I/
CPU84a是被構成為讀出來自記憶裝置84c的控制程式而實行,且按照來自輸出入裝置86的操作指令的輸入等,從記憶裝置84c讀出製程處方。而且,CPU84a是被構成為按照被讀出的製程處方的內容,經由I/O埠84d及未圖示的訊號線,控制閘閥34的開閉動作、昇降機構48的昇降動作、APC78的開度調整動作、真空泵82的起動及停止、往第1加熱器41及第2加熱器42的供給電力量調整動作(溫度調整動作)、處理氣體用閥60、惰性氣體用閥70、排氣閥80、處理氣體用閥60的開閉動作、MFC58及MFC68的各種氣體的流量調整動作等。The
控制器44是藉由將被儲存於外部記憶裝置(例如磁帶、軟碟或硬碟等的磁碟、CD或DVD等的光碟、MO等的光磁碟、USB記憶體或記憶卡等的半導體記憶體)88的上述的程式安裝於電腦而構成。記憶裝置84c或外部記憶裝置88是被構成為電腦可讀取的記錄媒體。以下,亦將該等總簡稱為記錄媒體。在本說明書中,稱記錄媒體時,有只包含記憶裝置84c單體時,只包含外部記憶裝置88單體時,或包含其雙方時。另外,用以供給程式至電腦的手段是不限於經由外部記憶裝置88來供給的情況。例如,亦可使用網路90(網際網路或專線)等的通訊手段,不經由外部記憶裝置88來供給程式。The controller 44 is stored in an external memory device (such as a magnetic tape, a magnetic disk such as a floppy disk or a hard disk, an optical disk such as a CD or a DVD, an optical disk such as a MO, a USB memory, a memory card, etc.) The above-mentioned program of the memory) 88 is installed in a computer and constituted. The
(基板處理工程)
其次,主要利用圖6來說明有關本實施形態的基板處理裝置10及使用半導體裝置的製造方法的基板處理工程。圖6是表示本實施形態的基板處理工程的流程圖。(Substrate processing process)
Next, the substrate processing process of the
在本基板處理工程中,對於在基板上所形成的金屬膜或金屬配線,在含有氫氣體氣氛下進行退火處理(氫退火處理)。In this substrate treatment process, an annealing treatment (hydrogen annealing treatment) is performed in a hydrogen-containing gas atmosphere for the metal film or metal wiring formed on the substrate.
本實施形態的半導體裝置的製造方法是具有:
將基板30搬入至基板處理裝置10的處理容器24內的基板搬入工程S110;
對基板30進行氫退火處理的處理工程S200(S120~S140);及
從處理容器24搬出基板30的基板搬出工程S150。
此基板處理工程是例如作為快閃記憶體等的半導體裝置的製造工程之一工程,藉由上述的基板處理裝置10來實施。在以下的說明中,構成基板處理裝置10的各部的動作是藉由圖5所示的控制器44控制。The manufacturing method of the semiconductor device of the present embodiment includes:
The substrate loading process S110 of loading the
(基板搬入工程S110)
首先,將作為基板30的例如晶圓搬入至處理容器24內。具體而言,昇降機構48會使基板保持台12下降至基板30的搬送位置,使昇降銷36貫通於基板保持台12的貫通孔12a。其結果,昇降銷36會成為比基板保持台12的上面38(具體而言,外側上面38b)僅預定的高度量突出的狀態。(Substrate loading process S110)
First, for example, a wafer as the
接著,開啟閘閥34,從與處理容器24鄰接的真空搬送室往處理容器24內,利用晶圓搬送機構(未圖示),通過基板搬出入口24d來搬入基板30。被搬入的基板30是以水平姿勢來被支撐於從基板保持台12的表面突出的昇降銷36上。一旦將基板30搬入至處理容器24內,則使晶圓搬送機構往處理容器24外退避,關閉閘閥34而將處理容器24內密閉。然後,藉由昇降機構48使基板保持台12上昇,基板30會被載置(支撐)於基板保持台12的上面38(具體而言,載置面38a)。並且,在基板保持台12的上面38與淋浴頭54的對向面52之間形成處理空間32。Next, the
(昇溫・真空排氣工程S120)
接著,進行被搬入至處理容器24內的基板30的昇溫。第1加熱器41是預先被加熱,藉由在埋入第1加熱器41的基板保持台12上保持基板30,將基板30加熱至例如150~750℃的範圍內的預定值。在此,基板30的溫度加熱成600℃。又,進行基板30的昇溫的期間,藉由真空泵82,經由排氣管76來將處理容器24內真空排氣,將處理容器24內的壓力設為預定的值。真空泵82是使作動至至少後述的基板搬出工程S150結束為止。(Heating and vacuum exhaust process S120)
Next, the temperature rise of the
另外,本說明書的「150~750℃」般的數值範圍的記載是意思下限值及上限值含在其範圍中。因此,例如所謂「150~750℃」是意思「150℃以上750℃以下」。有關其他的數值範圍也同樣。In addition, description of the numerical range like "150-750 degreeC" in this specification means that a lower limit and an upper limit are included in the range. Therefore, for example, "150 to 750°C" means "150°C or higher and 750°C or lower". The same applies to other numerical ranges.
(反應氣體供給工程S130)
其次,作為反應氣體,開始含氫的處理氣體的供給、及惰性氣體的供給。具體而言,開啟處理氣體用閥60,邊以MFC58控制流量,邊開始從處理氣體供給口16往處理空間32的處理氣體的供給,且開啟惰性氣體用閥70,邊以MFC68控制流量,邊開始從惰性氣體供給口18往處理容器24內的惰性氣體的供給。處理氣體是藉由淋浴頭54來分散而供給至處理空間32。此時,藉由被設在淋浴頭54的第2加熱器42,處理氣體會被加熱至預定溫度。惰性氣體是從惰性氣體供給口18進入至處理容器24內,通過處理容器24的頂面24e與淋浴頭54的蓋66之間,至淋浴頭54的外緣,通過遮蔽壁14與處理容器24的內壁24c之間,往氣體混合部22流動。(Reaction gas supply process S130)
Next, as the reaction gas, the supply of the hydrogen-containing processing gas and the supply of the inert gas are started. Specifically, the
此時,亦可將氫氣體的濃度為100%的處理氣體供給至處理空間32。處理空間32的處理氣體中的氫氣體的濃度是例如4%以上。另一方面,從惰性氣體供給口18供給至處理容器24內的惰性氣體的流量是被調整成氣體混合部22的氫氣體的濃度成為未滿4%。此時,藉由調整MFC58及APC78的開度,而控制往處理空間32的處理氣體的供給流量及處理容器24內的排氣,處理空間32的壓力會例如被調整成為大氣壓或相對於大氣壓微減壓(例如300Torr以上,未滿大氣壓)。如此,一面將處理容器24內適度地排氣,一面繼續處理氣體及惰性氣體的供給。At this time, a process gas having a hydrogen gas concentration of 100% may be supplied to the
基板30的上面是面對處理空間32,基板30上的金屬膜等會藉由含氫氣體的處理氣體來氫退火處理。如圖2、圖3所示般,處理空間32及基板保持台12的外周12b是被一體設於淋浴頭54的遮蔽壁14所包圍。並且,在遮蔽壁14與處理容器24的內壁24c之間是被供給惰性氣體。如圖3所示般,從處理空間32出去的處理氣體是通過遮蔽壁14與基板保持台12之間的處理氣體流路56,穿過該處理氣體流路56時,與惰性氣體合流,與該惰性氣體混合,到達下方的氣體混合部22。The upper surface of the
如此,在大氣壓或微減壓下的處理空間32中,即使氫氣體的濃度為4%以上,處理空間32的周圍也會以惰性氣體所淨化,不會有氧進入至處理空間32的情形,因此氫氣體的急劇的燃燒會被抑制。同樣,在被設為大氣壓或微減壓下的氣體混合部22,由於處理氣體會藉由惰性氣體所稀釋,氫氣體的濃度成為未滿4%,因此氫氣體的急劇的燃燒會被抑制。又,由於在狹窄的處理空間32進行基板的氫退火處理,因此實施安全對策的範圍會變小,容易應付。因此,可一面確保基板搬送空間(亦即搬送空間26),一面以最小的安全對策,對於微減壓下或大氣壓下的基板進行氫退火處理。In this way, in the
(真空排氣工程S140)
一旦氫退火處理完了,則停止處理氣體及惰性氣體的供給,經由排氣管76來將處理容器24內真空排氣。藉此,將處理容器24內的處理氣體、惰性氣體及氣體的反應所產生的排氣體等往處理容器24外排氣。然後,調整APC78的開度,將處理容器24內的壓力調整成與處理容器24鄰接的真空搬送室(亦即未圖示的基板30的搬出去處)相同的壓力,例如100Pa。(Vacuum Exhaust Engineering S140)
Once the hydrogen annealing process is completed, the supply of the process gas and the inert gas is stopped, and the inside of the
(基板搬出工程S150)
一旦處理容器24內成為預定的壓力,則使基板保持台12下降至基板30的搬送位置,在昇降銷36上支撐基板30。然後,開啟閘閥34,利用晶圓搬送機構,通過基板搬出入口24d,將基板30往處理容器24外搬出。藉由以上,完成本實施形態的基板處理工程。(Substrate unloading process S150)
Once the inside of the
(程式)
被用在上述的基板處理工程的程式是藉由電腦來使下列程序實行於基板處理裝置10:
將基板30搬入至處理容器24內而載置於基板保持台12上的程序;
對基板30進行氫退火處理的程序;
從處理容器24搬出基板30的程序。(program)
The program used in the above-mentioned substrate processing process is to execute the following program in the
又,若根據本實施形態,則藉由在氫氣體的燃燒發生時限制氫氣體急劇地膨脹的空間,可不用實施將裝置全體高耐壓化或防爆化的對策,減低高耐壓化或防爆化的對策所必要的成本,且容易運用,使裝置的安全性能提升。In addition, according to the present embodiment, by restricting the space where the hydrogen gas rapidly expands when the combustion of the hydrogen gas occurs, it is not necessary to take measures to increase the pressure resistance or explosion protection of the entire device, and it is possible to reduce the pressure resistance increase or explosion protection. The cost necessary for the countermeasures is reduced, and it is easy to use, which improves the safety performance of the device.
又,若根據本實施形態,則可使存在高濃度的氫氣體的處理空間32的容積藉由遮蔽壁12及昇降的基板保持台12來最小化。Furthermore, according to the present embodiment, the volume of the
又,若根據本實施形態,則藉由在氣體混合部22中迅速地稀釋從處理空間32排出的高濃度的氫氣體而形成未滿燃燒下限濃度(4%)的濃度,可將處理空間32以外的有可能發生急劇的燃燒的區域最小化。Furthermore, according to the present embodiment, by rapidly diluting the high-concentration hydrogen gas discharged from the
又,若根據本實施形態,則藉由在遮蔽壁12與處理容器24的內壁之間供給惰性氣體,可確實地防止從處理空間32往處理容器24外的氫氣體的洩漏。Moreover, according to this embodiment, by supplying the inert gas between the shielding
又,若根據本實施形態,則藉由以惰性氣體淨化淋浴頭54全體的方式構成裝置,即使從淋浴頭54洩漏的氫氣體萬一存在,也可確實地防止往處理容器24外洩漏。又,可抑制往處理空間32內的助燃性氣體的流入。Furthermore, according to the present embodiment, by configuring the apparatus so as to purify the
又,若根據本實施形態,則藉由惰性氣體供給口18設在遮蔽壁14的上端14a的位置或比該上端更高的位置,亦可取得沿著遮蔽壁14的外周而流動的惰性氣體所產生的遮蔽壁14的冷卻效果。Furthermore, according to the present embodiment, by providing the inert
(惰性氣體供給口的變形例)
如圖7所示般,亦可藉由設有複數的惰性氣體噴出孔94a的淋浴頭94來構成惰性氣體供給口18。在此構成中,從惰性氣體供給口18導入的惰性氣體是被供給至淋浴頭94內的緩衝空間97,從該緩衝空間97通過複數的惰性氣體噴出孔94a來分散供給至處理容器24內。(Variation of the inert gas supply port)
As shown in FIG. 7 , the inert
[第2實施形態]
在圖8~圖10中,本實施形態的基板處理裝置20是遮蔽壁14及惰性氣體供給口18會被設在處理容器24的頂面24e。具體而言,在處理容器24的頂面24e的中央部裝入處理氣體用的淋浴頭54。並且,在頂面24e的淋浴頭54的徑方向外側使用遮蔽壁14。遮蔽壁14是例如被形成圓筒狀,與淋浴頭54是另外被設置。惰性氣體供給口18是被設在遮蔽壁14與處理容器24的內壁24c之間。此惰性氣體供給口18是被構成為例如在周方向複數均等地配置,開口於處理容器24的頂面24e,從遮蔽壁14的上端14a朝向下端,沿著遮蔽壁14供給惰性氣體。[Second Embodiment]
In FIGS. 8 to 10 , in the
處理容器24是被區劃成配置基板保持台12的上室100及連接排氣部的下室102。上室100與下室102是以隔壁104來區劃,但隔壁104是形成有使上室100與下室102連通的連通孔104a。The
基板保持台12是例如藉由複數的傳動軸46所支撐。此傳動軸46及基保持台12是藉由昇降機構48的作動而昇降。另外,處理容器24、昇降機構48的構成是亦可與第1實施形態相同。The substrate holding table 12 is supported by, for example, a plurality of
在圖8中,本實施形態的基板處理裝置20是在使基板保持台12下降的狀態下將基板30搬入至處理容器24內。被搬入的基板30是以水平姿勢來被支撐於從基板保持台12的表面突出的昇降銷36上。如圖9所示般,藉由昇降機構48使基板保持台12上昇,基板30被支撐於基板保持台12的上面38(具體而言載置面38a)。並且,在基板保持台12的上面38與淋浴頭54的對向面52之間形成處理空間32。而且,處理空間32及基板保持台12的外周12b是被遮蔽壁14包圍。In FIG. 8 , the
如圖10所示般,在反應氣體供給工程S130 (圖6)中,處理氣體是藉由被設在處理容器24的頂面24e的淋浴頭54來分散而供給至處理空間32。惰性氣體是從例如位於遮蔽壁14的上端14a的位置或比該上端14a更高的位置的惰性氣體供給口18進入至處理容器24內,從遮蔽壁14的上端朝向下端,沿著遮蔽壁14供給。從處理空間32出去的處理氣體是通過遮蔽壁14與基板保持台12之間的處理氣體流路56,穿過該處理氣體流路56時,與惰性氣體合流,與該惰性氣體混合,到達下方的氣體混合部22。As shown in FIG. 10 , in the reaction gas supply step S130 ( FIG. 6 ), the process gas is dispersed and supplied to the
有關其他的部分是與第1實施形態同樣,因此相同或對應的部分是在圖面上附上相同的符號,省略說明。又,有關控制來自處理氣體供給口16的處理氣體的供給、及來自惰性氣體供給口18的惰性氣體的供給的MFC或閥也是圖示省,但可使用與第1實施形態同樣的構造。Since the other parts are the same as those of the first embodiment, the same or corresponding parts are denoted by the same reference numerals in the drawings, and the description thereof will be omitted. In addition, the MFC or valve for controlling the supply of the process gas from the process
[其他的實施形態] 以上、說明有關本案的實施形態之一例,但本案的實施形態是不被限於上述者,當然上述以外,可在不脫離其主旨的範圍內實施各種變形。[other embodiments] As mentioned above, although one example of the embodiment concerning this case was demonstrated, the embodiment of this case is not limited to the above-mentioned one, and it goes without saying that various deformation|transformation can be implemented in the range which does not deviate from the summary.
在基板保持台12上昇至處理位置的狀態下,基板30與對向面52的距離是被控制為例如2cm以下。藉由將此距離設為2cm以下,可將處理空間32的體積限制於可實用性地取得上述的效果的程度。並且,在此狀態下,基板30與對向面52的距離是被控制為例如0.5cm以上。藉由將此距離設為0.5cm以上,可抑制淋浴頭54的下面的溫度分佈的偏倚影響基板30的面內溫度分佈。處理空間32的容量是在基板保持台12的外周12b與遮蔽壁14重疊的範圍,藉由昇降機構48的控制來調整。In a state where the substrate holding table 12 is raised to the processing position, the distance between the
而且,在基板保持台12上昇至處理位置的狀態下,從基板保持台12的外側上面38b到遮蔽壁14的下端的上下方向的長度是例如5cm以上。藉由將此長度設為5cm以上,可防止處理氣體以外的氣體經由處理氣體流路56來流入至處理空間32內。並且,在此狀態下,基板保持台12的外周12b與遮蔽壁14的基板保持台12的徑方向的間隔是例如1cm以下。此間隔是相當於基板保持台12的徑方向剖面的處理氣體流路56的寬度。藉由將此間隔設為1cm以下,可防止處理氣體以外的氣體經由處理氣體流路56來流入至處理空間32內。又,此間隔是0.1cm以上。藉由將此間隔設為0.1cm以上,可確保處理氣體流路56的實用性的傳導(conductance)。The vertical length from the outer
又,上述是針對一片一片處理基板30的基板處理裝置10,20,但不限於此,亦可為在處理容器24內將基板30複數片排列於水平方向的分批式裝置。The
又,上述是針對半導體裝置的製造工程,但實施形態揭示的技術是在半導體裝置的製造工程以外也可適用。例如,有液晶裝置的製造工程、太陽電池的製造工程、發光裝置的製造工程、玻璃基板的處理工程、陶瓷基板的處理工程、導電性基板的處理工程等的基板處理。In addition, the above is the manufacturing process of the semiconductor device, but the technology disclosed in the embodiment is applicable to other than the manufacturing process of the semiconductor device. For example, there are substrate processing such as liquid crystal device manufacturing process, solar cell manufacturing process, light-emitting device manufacturing process, glass substrate processing process, ceramic substrate processing process, and conductive substrate processing process.
10:基板處理裝置 12:基板保持台 12a:貫通孔 12b:外周 12c:伸出部 14:遮蔽壁 14a:上端 16:處理氣體供給口 18:惰性氣體供給口 20:基板處理裝置 22:氣體混合部 24:處理容器 24a:上部容器 24b:下部容器 24c:內壁 24d:基板搬入出口 24e:頂面 26:搬送空間 30:基板 32:處理空間 34:閘閥 36:昇降銷 38:上面 38a:載置面 38b:外側上面 40:溫度控制部 41:第1加熱器 42:第2加熱器 44:控制器 46:傳動軸 48:昇降機構 50:波紋管 52:對向面 54:淋浴頭 54a:處理氣體噴出孔 56:處理氣體流路 58:MFC(Mass Flow Controller) 60:處理氣體用閥 62:支撐軸(淋浴頭) 64:多孔板 65:間隔件 66:蓋 67:緩衝空間 68:MFC 70:惰性氣體用閥 74:排氣口 76:排氣管 78:APC(Auto Pressure Controller) 80:排氣閥 82:真空泵 84a:CPU(Central Processing Unit) 84b:RAM(Random Access Memory) 84c:記憶裝置 84d:I/O埠 84e:內部匯流排 86:輸出入裝置 94:淋浴頭 94a:惰性氣體噴出孔 97:緩衝空間 100:上室 102:下室 104:隔壁 104a:連通孔10: Substrate processing device 12: Substrate holding table 12a: Through hole 12b: Peripheral 12c: Projection 14: Shelter Wall 14a: upper end 16: Process gas supply port 18: Inert gas supply port 20: Substrate processing device 22: Gas mixing section 24: Handling the container 24a: Upper container 24b: Lower container 24c: inner wall 24d: Substrate import and export 24e: top surface 26: Handling space 30: Substrate 32: Processing Space 34: Gate valve 36: Lifting pin 38: Above 38a: Mounting surface 38b: Outside top 40: Temperature Control Department 41: 1st heater 42: 2nd heater 44: Controller 46: Drive shaft 48: Lifting mechanism 50: Bellows 52: Opposite 54: Shower head 54a: Process gas ejection hole 56: Process gas flow path 58: MFC (Mass Flow Controller) 60: Valve for processing gas 62: Support shaft (shower head) 64: Multiwell Plate 65: Spacer 66: Cover 67: Buffer space 68: MFC 70: Valve for inert gas 74: exhaust port 76: Exhaust pipe 78: APC (Auto Pressure Controller) 80: Exhaust valve 82: Vacuum pump 84a: CPU (Central Processing Unit) 84b: RAM (Random Access Memory) 84c: Memory Device 84d: I/O port 84e: Internal busbar 86: Input and output device 94: shower head 94a: Inert gas ejection hole 97: Buffer space 100: Upper Room 102: Lower Room 104: Next Door 104a: Connecting hole
[圖1]是表示在第1實施形態的基板處理裝置中,基板保持台下降的狀態的剖面圖。 [圖2]是表示在第1實施形態的基板處理裝置中,基板保持台上昇後的狀態的剖面圖。 [圖3]是表示在第1實施形態的基板處理裝置中,氫退火處理時的處理氣體與惰性氣體的流動的擴大剖面圖。 [圖4]是表示在第1實施形態的基板處理裝置中,惰性氣體供給口的其他的例子的剖面圖。 [圖5]是基板處理裝置的控制器的概略構成圖。 [圖6]是基板處理工程的流程圖。 [圖7]是表示在第1實施形態的基板處理裝置中,淋浴頭的其他的例子的擴大剖面圖。 [圖8]是表示在第2實施形態的基板處理裝置中,基板保持台下降的狀態的剖面圖。 [圖9]是表示在第2實施形態的基板處理裝置中,基板保持台上昇後的狀態的剖面圖。 [圖10]是表示在第2實施形態的基板處理裝置中,氫退火處理時的處理氣體與惰性氣體的流動的擴大剖面圖。1 is a cross-sectional view showing a state in which a substrate holding table is lowered in the substrate processing apparatus according to the first embodiment. [ Fig. 2] Fig. 2 is a cross-sectional view showing a state in which the substrate holding table is raised in the substrate processing apparatus according to the first embodiment. 3 is an enlarged cross-sectional view showing the flow of the processing gas and the inert gas during the hydrogen annealing treatment in the substrate processing apparatus according to the first embodiment. 4 is a cross-sectional view showing another example of an inert gas supply port in the substrate processing apparatus according to the first embodiment. 5 is a schematic configuration diagram of a controller of the substrate processing apparatus. [ Fig. 6 ] is a flowchart of the substrate processing process. 7 is an enlarged cross-sectional view showing another example of the shower head in the substrate processing apparatus according to the first embodiment. 8 is a cross-sectional view showing a state in which the substrate holding table is lowered in the substrate processing apparatus according to the second embodiment. [ Fig. 9] Fig. 9 is a cross-sectional view showing a state in which the substrate holding table is raised in the substrate processing apparatus according to the second embodiment. 10 is an enlarged cross-sectional view showing the flow of a processing gas and an inert gas during the hydrogen annealing treatment in the substrate processing apparatus according to the second embodiment.
10:基板處理裝置 10: Substrate processing device
12:基板保持台 12: Substrate holding table
12a:貫通孔 12a: Through hole
12b:外周 12b: Peripheral
12c:伸出部 12c: Projection
14:遮蔽壁 14: Shelter Wall
14a:上端 14a: upper end
16:處理氣體供給口 16: Process gas supply port
18:惰性氣體供給口 18: Inert gas supply port
22:氣體混合部 22: Gas mixing section
24:處理容器 24: Handling the container
24a:上部容器 24a: Upper container
24b:下部容器 24b: Lower container
24c:內壁 24c: inner wall
24d:基板搬入出口 24d: Substrate import and export
24e:頂面 24e: top surface
26:搬送空間 26: Handling space
30:基板 30: Substrate
34:閘閥 34: Gate valve
36:昇降銷 36: Lifting pin
38:上面 38: Above
38a:載置面 38a: Mounting surface
38b:外側上面 38b: Outside top
40:溫度控制部 40: Temperature Control Department
41:第1加熱器 41: 1st heater
42:第2加熱器 42: 2nd heater
46:傳動軸 46: Drive shaft
48:昇降機構 48: Lifting mechanism
50:波紋管 50: Bellows
52:對向面 52: Opposite
54:淋浴頭 54: Shower head
54a:處理氣體噴出孔 54a: Process gas ejection hole
58:MFC(Mass Flow Controller) 58: MFC (Mass Flow Controller)
60:處理氣體用閥 60: Valve for processing gas
62:支撐軸(淋浴頭) 62: Support shaft (shower head)
64:多孔板 64: Multiwell Plate
65:間隔件 65: Spacer
66:蓋 66: Cover
67:緩衝空間 67: Buffer space
68:MFC 68: MFC
70:惰性氣體用閥 70: Valve for inert gas
74:排氣口 74: exhaust port
76:排氣管 76: Exhaust pipe
78:APC(Auto Pressure Controller) 78: APC (Auto Pressure Controller)
80:排氣閥 80: Exhaust valve
82:真空泵 82: Vacuum pump
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
WOPCT/JP2020/011754 | 2020-03-17 | ||
PCT/JP2020/011754 WO2021186562A1 (en) | 2020-03-17 | 2020-03-17 | Substrate treatment device, manufacturing method for semiconductor device, and program |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202205477A TW202205477A (en) | 2022-02-01 |
TWI775328B true TWI775328B (en) | 2022-08-21 |
Family
ID=77770981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110106856A TWI775328B (en) | 2020-03-17 | 2021-02-26 | Substrate processing apparatus, manufacturing method and program of semiconductor device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2021186562A1 (en) |
TW (1) | TWI775328B (en) |
WO (1) | WO2021186562A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5907188A (en) * | 1995-08-25 | 1999-05-25 | Kabushiki Kaisha Toshiba | Semiconductor device with conductive oxidation preventing film and method for manufacturing the same |
US20040052972A1 (en) * | 2002-07-03 | 2004-03-18 | Jacques Schmitt | Method and apparatus for ALD on a rotary susceptor |
TW201536951A (en) * | 2014-03-31 | 2015-10-01 | Nuflare Technology Inc | Vapor deposition device and vapor deposition method |
US20180112309A1 (en) * | 2016-10-24 | 2018-04-26 | Tokyo Electron Limited | Processing Apparatus and Cover Member |
US20190294151A1 (en) * | 2018-03-26 | 2019-09-26 | Kokusai Electric Corporation | Method of Manufacturing Semiconductor Device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3421483B2 (en) * | 1995-08-25 | 2003-06-30 | 株式会社東芝 | Method for manufacturing semiconductor device |
JP2013084895A (en) * | 2011-09-29 | 2013-05-09 | Mitsubishi Electric Corp | Substrate processing apparatus, substrate processing method and solar cell manufacturing method |
US9330939B2 (en) * | 2012-03-28 | 2016-05-03 | Applied Materials, Inc. | Method of enabling seamless cobalt gap-fill |
-
2020
- 2020-03-17 JP JP2022508665A patent/JPWO2021186562A1/ja active Pending
- 2020-03-17 WO PCT/JP2020/011754 patent/WO2021186562A1/en active Application Filing
-
2021
- 2021-02-26 TW TW110106856A patent/TWI775328B/en active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5907188A (en) * | 1995-08-25 | 1999-05-25 | Kabushiki Kaisha Toshiba | Semiconductor device with conductive oxidation preventing film and method for manufacturing the same |
US20040052972A1 (en) * | 2002-07-03 | 2004-03-18 | Jacques Schmitt | Method and apparatus for ALD on a rotary susceptor |
TW201536951A (en) * | 2014-03-31 | 2015-10-01 | Nuflare Technology Inc | Vapor deposition device and vapor deposition method |
US20180112309A1 (en) * | 2016-10-24 | 2018-04-26 | Tokyo Electron Limited | Processing Apparatus and Cover Member |
US20190294151A1 (en) * | 2018-03-26 | 2019-09-26 | Kokusai Electric Corporation | Method of Manufacturing Semiconductor Device |
Also Published As
Publication number | Publication date |
---|---|
TW202205477A (en) | 2022-02-01 |
WO2021186562A1 (en) | 2021-09-23 |
JPWO2021186562A1 (en) | 2021-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6270952B1 (en) | Substrate processing apparatus, semiconductor device manufacturing method, and recording medium. | |
KR102311459B1 (en) | Substrate processing apparatus, semiconductor device manufacturing method, and program | |
JP2020053506A (en) | Substrate processing device, method for manufacturing semiconductor device, and recording medium | |
JP6318139B2 (en) | Substrate processing apparatus, semiconductor device manufacturing method, and program | |
KR20170033773A (en) | Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium | |
KR20070082888A (en) | Heating device, heating method, coating apparatus and storage medium | |
WO2002059955A1 (en) | Method and device for heat treatment | |
TWI761758B (en) | Manufacturing method of semiconductor device, substrate processing apparatus, and recording medium | |
KR102414566B1 (en) | Apparatus and method for etching substrate | |
JP2011100968A (en) | Substrate processing apparatus, control method of substrate processing apparatus, manufacturing method of semiconductor device and apparatus state shifting method | |
TWI775328B (en) | Substrate processing apparatus, manufacturing method and program of semiconductor device | |
WO2012153591A1 (en) | Film-forming apparatus | |
CN111755359B (en) | Substrate processing apparatus, reaction tube, and method for manufacturing semiconductor device | |
WO2017134853A1 (en) | Substrate processing apparatus and method for manufacturing semiconductor device | |
KR102260845B1 (en) | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium | |
CN115732390A (en) | Substrate processing apparatus, substrate processing method, storage medium, and method for manufacturing semiconductor device | |
JP4880408B2 (en) | Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, main controller, and program | |
KR20220134439A (en) | Reaction tube, substrate processing apparatus and method of manufacturing semiconductor device | |
JP6992156B2 (en) | Manufacturing method of processing equipment, exhaust system, semiconductor equipment | |
JP2006261285A (en) | Substrate treatment equipment | |
TW202044352A (en) | Reaction tube and method of manufacturing semiconductor device | |
TWI835206B (en) | Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method and program | |
JP4015015B2 (en) | Heat treatment equipment | |
JP5006821B2 (en) | Substrate processing apparatus and semiconductor device manufacturing method | |
TW202130853A (en) | Substrate treatment device, method for producing semiconductor device, and program |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent |