TWI774828B - processing methods - Google Patents
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- 238000003672 processing method Methods 0.000 title claims abstract description 15
- 230000011218 segmentation Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 17
- 239000010410 layer Substances 0.000 description 17
- 239000011148 porous material Substances 0.000 description 14
- 238000003754 machining Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 230000004075 alteration Effects 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
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Abstract
[課題]提供一種與習知相比,不會對被加工物造成衝撞而可將被加工物分割的加工方法。 [解決手段]本發明之加工方法由於具備有:雷射加工步驟,其係沿著分割預定線(2)對被加工物(1)施行雷射加工;及分割步驟,其係在實施雷射加工步驟之後,藉由切削被加工物(1)的厚度方向的一部分來進行分割,因此,與使用制動裝置等之習知之加工方法相比,可減小對被加工物(1)的衝撞,且可將被加工物(1)良好地分割成各個晶片。此外,在分割步驟中,係僅以切削刀(26)切削被加工物(1)的厚度方向的一部分即可,因此,與以切削刀(26)將被加工物(1)以厚度方向完全切斷的情形相比,可加快加工進給速度,晶片的生產性會提升。[Problem] To provide a processing method capable of dividing the workpiece without colliding with the workpiece as compared with the prior art. [Solution] The processing method of the present invention includes: a laser processing step of performing laser processing on the workpiece (1) along the dividing line (2); and a dividing step of performing laser processing After the processing step, the workpiece (1) is divided by cutting a part of the thickness direction, so that the impact on the workpiece (1) can be reduced compared with the conventional processing method using a braking device or the like, Furthermore, the workpiece (1) can be favorably divided into individual wafers. In addition, in the dividing step, only a part of the workpiece (1) in the thickness direction needs to be cut with the cutting blade (26). Compared with the case of cutting, the processing feed rate can be increased, and the productivity of the wafer can be improved.
Description
本發明係關於將被加工物分割成各個晶片的被加工物之加工方法。The present invention relates to a method for processing a workpiece in which the workpiece is divided into individual wafers.
晶圓等被加工物係在藉由其表面的格子狀的分割預定線予以區劃的區域分別形成有元件,沿著分割預定線進行分割,藉此被分割成具有元件的各個晶片。以將被加工物分割成各個晶片的方法而言,係採用對被加工物施行雷射加工而形成分割起點之後,對被加工物賦予外力來分割被加工物的方法。A workpiece such as a wafer is divided into wafers each having elements by forming elements in regions demarcated by grid-like planned dividing lines on the surface thereof, and dividing along the planned dividing lines. As the method of dividing the workpiece into individual wafers, a method of dividing the workpiece by applying an external force to the workpiece after forming the starting point of division by laser processing the workpiece is employed.
以雷射加工之例而言,例如有一種藉由對被加工物照射脈衝雷射光線,形成由細孔、及屏蔽細孔的非晶質所構成的潛盾隧道的加工方法(參照下述專利文獻1)。此外,以其他雷射加工之例而言,亦有一種照射對被加工物具透過性的波長的雷射束而在被加工物的內部形成改質層的加工方法(參照下述專利文獻2)。接著,對被加工物施行雷射加工之後,例如,使用制動裝置對被加工物施加外力來進行分割(參照下述專利文獻3及4)。 [先前技術文獻] [專利文獻]As an example of laser processing, for example, there is a processing method of forming a submerged shield tunnel composed of pores and amorphous materials that shield the pores by irradiating the workpiece with pulsed laser light (refer to the following). Patent Document 1). In addition, as another example of laser processing, there is also a processing method in which a modified layer is formed inside the workpiece by irradiating a laser beam having a wavelength that is transparent to the workpiece (refer to the following Patent Document 2). ). Next, after the laser processing is performed on the workpiece, for example, the workpiece is divided by applying an external force to the workpiece using a braking device (refer to the following
[專利文獻1]日本特開2014-221483號公報 [專利文獻2]日本專利第3408805號公報 [專利文獻3]日本特開2009-148982號公報 [專利文獻4]日本特開2013-38434號公報[Patent Document 1] JP 2014-221483 A
(發明所欲解決之課題)(The problem to be solved by the invention)
但是,在制動裝置中,係由被加工物的上方使刀刃(按壓構件)下降,使其衝撞被加工物而以該打擊來進行分割,因此若以不適當的條件進行制動,有使被加工物破損之虞,更加期望一種對被加工物不會造成衝撞的分割方法。However, in the braking device, the blade (pressing member) is lowered from the upper side of the workpiece to collide with the workpiece to be divided by the blow. Therefore, if the braking is performed under inappropriate conditions, the workpiece may be damaged. There is a risk of damage to the object, and a segmentation method that does not cause collision to the workpiece is more desirable.
本發明之目的在提供一種與習知相比,不會對被加工物造成衝撞而可將被加工物分割的加工方法。 (解決課題之手段)An object of the present invention is to provide a processing method capable of dividing the workpiece without colliding with the workpiece as compared with the prior art. (Means to Solve Problems)
本發明係一種加工方法,其係設定有分割預定線之被加工物之加工方法,該加工方法具備有:雷射加工步驟,其係沿著該分割預定線照射對被加工物具透過性的波長的雷射束,對被加工物施行雷射加工;及分割步驟,其係在實施該雷射加工步驟之後,以切削刀沿著該分割預定線切削被加工物的厚度方向的一部分,藉此沿著該分割預定線分割被加工物,該分割步驟係以沿著該分割預定線的伸長方向伸長的支持部支持該分割預定線的兩側,並且該分割預定線的正下方並無須支持來實施。The present invention relates to a processing method, which is a method for processing a workpiece with a predetermined dividing line set, and the processing method includes: a laser processing step of irradiating a laser beam that is transparent to the workpiece along the predetermined dividing line. A laser beam of a wavelength is used to perform laser processing on the workpiece; and a dividing step is to cut a part of the thickness direction of the workpiece along the predetermined dividing line with a cutting blade after the laser processing step is performed. The workpiece is divided along the planned dividing line, and the dividing step is to support both sides of the planned dividing line with support portions extending along the extending direction of the planned dividing line, and there is no need to support directly below the planned dividing line. to implement.
較佳為在前述分割步驟中,在具有吸引保持面的保持平台上,透過具有與被加工物為同等以上的尺寸而且具有小於該吸引保持面的尺寸的支持治具,將被加工物載置於該吸引保持面,在被加工物的被保持面係貼著有具有大於該吸引保持面的尺寸的帶件,在該保持平台上,在透過該支持治具所載置的被加工物所黏著的該帶件覆蓋該吸引保持面的狀態下,以該保持平台吸引保持被加工物。Preferably, in the aforementioned dividing step, the workpiece is placed on the holding platform having the suction and holding surface through a support jig having a size equal to or greater than that of the workpiece and having a size smaller than the suction and holding surface. On the suction and holding surface, a tape with a size larger than the suction and holding surface is attached to the held surface of the workpiece, and on the holding platform, the workpiece placed through the support jig is placed. In a state where the adhered tape covers the suction and holding surface, the workpiece is sucked and held by the holding platform.
此外,較佳為在前述分割步驟中,係以治具平台直接吸引保持被加工物,該治具平台係包含支持被加工物的支持面,形成有對應前述分割預定線的溝槽,並且在以該溝槽予以區劃的各區域形成有吸引被加工物的吸引孔。In addition, it is preferred that in the aforementioned dividing step, the workpiece is directly attracted and held by a jig platform, the jig platform includes a support surface for supporting the workpiece, a groove corresponding to the aforementioned dividing line is formed, and Suction holes for sucking the workpiece are formed in each region defined by the grooves.
較佳為上述切削刀的前端的剖面形狀係V形狀。 (發明之效果)Preferably, the cross-sectional shape of the tip of the cutting blade is a V-shape. (effect of invention)
本發明之加工方法係具備有:沿著分割預定線對被加工物施行雷射加工的雷射加工步驟;及藉由切削被加工物的厚度方向的一部分來進行分割的分割步驟,分割步驟係以沿著分割預定線的伸長方向伸長的支持部支持分割預定線的兩側,並且分割預定線的正下方並無須支持來實施,因此與習知之加工方法相比,可減小對被加工物的衝撞,可將被加工物良好地分割成各個晶片。此外,在分割步驟中,若僅以切削刀切削被加工物的厚度方向的一部分即可,因此與以切削刀將被加工物以厚度方向完全切斷的情形相比,可加快加工進給速度,晶片的生產性會提升。The processing method of the present invention includes: a laser processing step of performing laser processing on a workpiece along a line to be divided; and a dividing step of dividing the workpiece by cutting a part of the thickness direction of the workpiece, and the dividing step is a The two sides of the planned dividing line are supported by the support parts extending along the extending direction of the planned dividing line, and the support is not required directly below the planned dividing line. Therefore, compared with the conventional processing method, it is possible to reduce the impact on the workpiece. The collision can well divide the workpiece into individual wafers. In addition, in the dividing step, only a part of the workpiece in the thickness direction can be cut with the cutting blade. Therefore, compared with the case where the workpiece is completely cut in the thickness direction with the cutting blade, the machining feed rate can be increased. , the productivity of the wafer will be improved.
在上述分割步驟中,在具有吸引保持面的保持平台上,透過具有與被加工物為同等以上的尺寸而且具有小於吸引保持面的尺寸的支持治具,以保持平台吸引保持被加工物,因此可減小分割時對被加工物的衝撞,可將被加工物良好地分割成各個晶片。In the above-mentioned dividing step, on the holding platform having the suction and holding surface, the holding platform sucks and holds the workpiece through a support jig that has a size equal to or greater than that of the workpiece and has a size smaller than that of the suction and holding surface. The impact on the workpiece at the time of division can be reduced, and the workpiece can be favorably divided into individual wafers.
此外,在上述分割步驟中,係形成為以治具平台直接吸引保持被加工物的構成,該治具平台係包含支持被加工物的支持面,形成有對應上述分割預定線的溝槽,並且在以溝槽予以區劃的各區域形成有吸引被加工物的吸引孔,因此即使為未貼著有帶件的被加工物,亦可減小分割時對被加工物的衝撞,可將被加工物良好地分割成各個晶片。In addition, in the above-mentioned dividing step, the workpiece is directly sucked and held by a jig platform, and the jig platform includes a support surface for supporting the workpiece, and a groove corresponding to the above-mentioned dividing line is formed, and Suction holes for sucking the workpiece are formed in each area divided by grooves. Therefore, even if the workpiece is not attached with a tape, the impact on the workpiece during division can be reduced, and the workpiece can be processed. The object is well divided into individual wafers.
若上述切削刀的前端的剖面形狀為V形狀,在實施分割步驟時,即使以被加工物的厚度方向切入的深度淺,亦可將經雷射加工的被加工物以厚度方向效率佳地進行分割。If the cross-sectional shape of the tip of the cutting blade is a V shape, even if the depth of incision in the thickness direction of the workpiece is shallow when the dividing step is performed, the laser-processed workpiece can be efficiently processed in the thickness direction. segmentation.
1 被加工物 圖1所示之被加工物1係矩形板狀的被加工物之一例,在其上面1a係設定格子狀的分割預定線2而形成有圖案。被加工物1之與上面1a為相反側的下面係形成為例如貼附帶件(tape)4的被保持面1b。被加工物1的材質係藉由例如包含石英玻璃或硼矽酸玻璃的各種玻璃、LT/LN(鉭酸鋰/鈮酸鋰)、SiC(矽碳化物)、Si(矽)、GaN(氮化鎵)、GaAs(砷化鎵)、藍寶石、陶瓷等所形成。被加工物1亦可為圓形板狀,而非侷限於矩形板狀。1 Object to be processed The object to be processed 1 shown in FIG. 1 is an example of a rectangular plate-shaped object to be processed, and a pattern is formed on the
本實施形態所示之被加工物1係在將在中央具有開口的環狀框架3的開口閉塞而貼著的帶件4貼著被加工物1的被保持面1b,藉此透過帶件4而與框架3形成為一體予以支持。帶件4並未特別限定,使用例如在由聚烯烴或聚氯乙烯等所成之基材層積層有黏著層的2層構造的伸展薄片。本實施形態所示之被加工物1係設定有分割預定線2,但是亦可為未設定分割預定線2而未形成有圖案的被加工物。In the
2 加工方法 圖2所示之雷射加工裝置10係用以實施後述之雷射加工步驟的雷射加工裝置之一例。雷射加工裝置10係具有裝置基座100,在裝置基座100之上係具備有:保持被加工物1且可旋轉的保持平台11;將保持平台11以加工進給方向(X軸方向)進行加工進給的加工進給手段13;及將保持平台11以分級進給方向(Y軸方向)進行分級進給的分級進給手段14。2. Processing method The
保持平台11的上面係形成為保持被加工物1的保持面11a。在保持平台11的周緣係配設有複數個保持上述框架3的框架保持手段12。框架保持手段12係具備有:載置框架3的框架載置台120;及按壓被載置在框架載置台120的框架3的上面的夾具部121。The upper surface of the holding table 11 is formed as a
加工進給手段13係具備有:以X軸方向延伸的滾珠螺桿130;連接於滾珠螺桿130的一端的馬達131;與滾珠螺桿130呈平行延伸的一對導軌132;及可以X軸方向移動的X軸基座133。在X軸基座133的其中一面係支持有保持平台11,在X軸基座133的另一面係滑接一對導軌132,在形成在X軸基座133的中央部的螺帽螺合有滾珠螺桿130。藉由馬達131被驅動的滾珠螺桿130進行旋動,藉此X軸基座133可沿著導軌132以X軸方向移動,且將保持平台11以X軸方向進行加工進給。The machining feeding means 13 includes: a
分級進給手段14係具備有:以Y軸方向延伸的滾珠螺桿140;連接於滾珠螺桿140的一端的馬達141;與滾珠螺桿140呈平行延伸的一對導軌142;及可以Y軸方向移動的Y軸基座143。在Y軸基座143的其中一面係透過加工進給手段13而支持保持平台11,在Y軸基座143的另一面係滑接一對導軌142,在形成在Y軸基座143的中央部的螺帽螺合有滾珠螺桿140。藉由馬達141被驅動的滾珠螺桿140進行旋動,藉此Y軸基座143可沿著導軌142以Y軸方向移動,且將保持平台11以Y軸方向進行分級進給。The stepwise feeding means 14 includes: a
在裝置基座100的Y軸方向後部側係立設有以Z軸方向延伸的側壁101。在側壁101的前方係具備有:對被加工物1施行雷射加工的雷射束照射手段15;及使雷射束照射手段15以Z軸方向作升降的升降手段17。雷射束照射手段15係具備有:以Y軸方向延伸的殼體150;及配設在殼體150的前端的聚光器151。在殼體150的內部係收容有將對被加工物1具透過性的波長的雷射束進行振盪的振盪器。在聚光器151的內部係內置有用以將由振盪器被振盪的雷射束進行聚光的聚光透鏡(未圖示)。A
在殼體150的前端而且鄰接聚光器151的位置,係配設有檢測應照射雷射束的區域(分割預定線2)的攝像手段16。攝像手段16係例如內置CCD畫像感測器的攝影機。攝像手段16係可將被保持在保持平台11的被加工物1由上方進行攝像,且進行圖案匹配等畫像處理,藉此檢測分割預定線2。At the front end of the
升降手段17係具備有:以Z軸方向延伸的滾珠螺桿170;連接於滾珠螺桿170的一端的馬達171;與滾珠螺桿170呈平行延伸的一對導軌172;及支持雷射束照射手段15的升降板173。在升降板173的其中一面固定殼體150,在升降板173的另一面滑接一對導軌172,在形成在升降板173的中央部的螺帽螺合有滾珠螺桿170。藉由馬達171被驅動的滾珠螺桿170進行旋動,藉此升降板173可沿著導軌172以Z軸方向移動,使聚光器151上下移動,將雷射束的聚光位置調整至所希望的位置。The elevating means 17 includes: a
(雷射加工步驟的第1例) 接著,使用雷射加工裝置10,沿著分割預定線2照射對被加工物1具透過性的波長的雷射束而對被加工物1施行雷射加工。例如使用具有球面像差的聚光透鏡而在以聚光透鏡所聚光的雷射束發生縱像差的狀態下,對被加工物照射雷射束。雷射加工步驟的第1例係被設定成例如下述加工條件1予以實施。(The first example of the laser processing step) Next, the
[加工條件1] 被加工物1的材質 :石英玻璃 被加工物1的厚度 :500μm 波長 :1064nm的脈衝雷射 平均輸出 :2W 重複頻率 :10kHz 加工進給速度 :100mm/s[Processing condition 1] Material of workpiece 1: Quartz glass Thickness of workpiece 1: 500μm Wavelength: 1064nm pulsed laser Average output: 2W Repetition frequency: 10kHz Machining feed rate: 100mm/s
如圖3所示,一將貼著有帶件4的被加工物1的被保持面1b側載置在保持平台11的保持面11a,並且將框架3載置在框架載置台120,即藉由夾具部121按壓框架3的上面來進行固定。接著,藉由圖2所示之加工進給手段13,使保持平台11以X軸方向移動,藉由攝像手段16來檢測應進行雷射加工的分割預定線2。之後,藉由分級進給手段14,一進行聚光器151與分割預定線2的Y軸方向的對位,即藉由升降手段17,使聚光器151以接近被加工物1的方向下降,且以將雷射束LB的聚光點的位置以被加工物1的厚度方向延伸的方式進行定位。As shown in FIG. 3, once the held
一邊藉由圖2所示之加工進給手段13,將保持平台11以預定的加工進給速度(100mm/s)以X軸方向進行加工進給,雷射束照射手段15係一邊沿著圖1所示之分割預定線2,由被加工物1的上面1a側照射對被加工物1具透過性的波長(1064nm)的雷射束LB,沿著分割預定線2,形成複數以雷射束LB的照射方向伸長的圖4所示之細孔5。圖示之例中的細孔5係在被加工物1的被保持面1b形成開口6,形成為從上面1a朝向被保持面1b呈擴徑的微細的孔。因在被加工物1的內部形成細孔5,實施後述之分割步驟時,僅由上面1a側施加相對較小的外力,細孔5之擴徑之側(形成有開口6的被保持面1b側)變得容易壓寬,可良好分割被加工物1。While processing and feeding the holding table 11 in the X-axis direction at a predetermined processing feed speed (100 mm/s) by the processing and feeding means 13 shown in FIG. The planned dividing line 2 shown in 1 is irradiated with a laser beam LB having a wavelength (1064 nm) that is transparent to the
在細孔5的周圍,圍繞細孔5形成有變質的變質區域7。沿著分割預定線2的伸張方向,間歇反覆進行藉由照射雷射束LB所致之細孔5的形成,而形成複數細孔5。在鄰接的細孔5間係在一部分形成有裂痕。如上所示,一沿著圖1所示之全部分割預定線2形成複數由細孔5及圍繞此的變質區域7所構成的潛盾隧道,雷射加工步驟的第1例即完成。細孔5係形成為例如φ1μm,在第1例中,將被加工物1的加工進給速度設定為100mm/s、雷射束LB的重複頻率設定為10kHz,藉此以10μm間距沿著分割預定線2形成細孔3。其中,在第1例中,為方便說明起見,在圖4中以模式顯示細孔5或變質區域7而明確圖示,但是實際加工形成的細孔5或變質區域7並不清楚而不明顯。Around the
在上述雷射加工步驟的第1例中,為了在被加工物1的內部形成良好的潛盾隧道,例如圖5所示,以將聚光透鏡152的開口數(NA)除以被加工物1的折射率(N)後的值(S=NA/N)被設定在例如0.05~0.2的範圍為佳。在此,說明開口數(NA)、與折射率(N)、與將開口數(NA)除以折射率(N)後的值(S=NA/N)的關係性。通過聚光透鏡152的雷射束LB係相對光軸O具有角度θ而予以聚光,此時的sinθ為聚光透鏡的開口數(NA)(N=sinθ)。藉由聚光透鏡152被聚光的雷射束LB被照射在被加工物1時,雷射束LB係由角度θ折射成角度α而被聚光在聚光點P。相對光軸O的角度α係依被加工物1的折射率(N)而異,該折射率(N)係將sinθ除以sinα後的值(N=sinθ/sinα),因此將開口數(NA)除以折射率(N)後的值(S=NA/N)係成為sinα。因此,若將sinα設定在0.05~0.2的範圍(0.05≦sinα≦0.2)即可。In the first example of the above-mentioned laser processing step, in order to form a good shield tunnel inside the
接著,說明應使將開口數(NA)除以折射率(N)後的值(S=NA/N)設定在0.05~0.2的範圍的依據。具體而言,將厚度為500μm、由石英玻璃所成之被加工物1(折射率(N):1.45),將聚光透鏡152的開口數(NA)分別設定為例如0.05、0.1、0.15、0.2、0.25、0.3、0.35、0.4,以上述加工條件1形成潛盾隧道,來判定其良否。若開口數(N)為0.05,將開口數(NA)除以被加工物1的折射率(N)後的值(S=NA/N)成為0.035,確認出形成在被加工物1的內部的潛盾隧道為不良。此外,若開口數(N)分別設定為0.3、0.35、0.4,將開口數(NA)除以被加工物1的折射率(N)後的值(S=NA/N)成為0.207、0.241、0.276,潛盾隧道成為為不良,尤其在開口數(N)為0.35、0.4的情形下,確認出發生孔洞。另一方面,若開口數(N)分別設定為0.05、0.1、0.15、0.2、0.25,除以被加工物1的折射率(N)後的值(S=NA/N)成為0.069、0.103、0.138、0.172,確認出在被加工物1的內部形成良好的潛盾隧道。因此,若為開口數(NA)被設定為0.1~0.25的範圍的聚光透鏡152,將開口數(NA)除以折射率(N)後的值(S=NA/N)成為0.05~0.2的範圍,因此確認出可形成良好的潛盾隧道。在雷射加工步驟的第1例中,在雷射束LB產生縱像差,在雷射束LB的聚光點P以被加工物1的厚度方向延伸的狀態下,對被加工物1照射雷射束LB。每逢1脈衝的雷射束LB被照射至被加工物1,即形成1個細孔5,因此僅將保持平台11一度進行加工進給,即可形成以被加工物1的厚度方向伸長的變質區域7。其中,在第1例中,係除了如上所述使用具有球面像差的聚光透鏡152之外,亦可藉由在聚光透鏡的上游側或下游側配設透鏡而生成球面像差,亦可將自身具有預定擴散角的雷射束LB由振盪器進行振盪而在聚光透鏡聚光。Next, the reason for setting the value (S=NA/N) obtained by dividing the number of apertures (NA) by the refractive index (N) in the range of 0.05 to 0.2 will be described. Specifically, for the workpiece 1 (refractive index (N): 1.45) made of quartz glass with a thickness of 500 μm, the number of apertures (NA) of the
(雷射加工步驟的第2例) 在上述雷射加工步驟的第1例中,係在被加工物1的內部形成有潛盾隧道,但是並非侷限於該情形,亦可如圖6所示,在被加工物1A的內部形成改質層8。在形成第1例的潛盾隧道的情形下,係使用具有球面像差的聚光透鏡152,但是在第2例中,係進行在被加工物1A的內部形成改質層8的加工,因此使用不具球面像差的聚光透鏡。亦即,雷射加工步驟的第2例係使用與上述雷射加工裝置10不同的光學系的雷射加工裝置(未圖示)來進行。雷射加工步驟的第2例係被設定為例如下述加工條件2來實施。(Second example of the laser processing step) In the first example of the above-mentioned laser processing step, the shield tunnel is formed inside the
[加工條件2] 被加工物1的材質 :石英玻璃 被加工物1的厚度 :500μm 波長 :1064nm的脈衝雷射 平均輸出 :0.2W 重複頻率 :80kHz 加工進給速度 :200mm/s[Processing condition 2] Material of workpiece 1: Quartz glass Thickness of workpiece 1: 500μm Wavelength: 1064nm pulsed laser Average output: 0.2W Repetition frequency: 80kHz Processing feed rate: 200mm/s
雖未圖示,使聚光器以接近被加工物1A的方向下降,且將雷射束的聚光點的位置定位在接近被加工物1A的被保持面1b側的預定深度。一邊將保持平台以預定的加工進給速度(200mm/s)以X軸方向進行加工進給,一邊沿著分割預定線2,由被加工物1的上面1a側照射對被加工物1A具透過性的波長(1064nm)的雷射束,如圖6所示,在被加工物1A的內部,沿著分割預定線2的伸張方向形成強度降低的改質層8。由改質層8的端部,以被加工物1A的厚度方向產生裂痕9。其中,若以裂痕9至被加工物1A的被保持面1b的方式調整雷射束的輸出即可。Although not shown, the condenser is lowered in a direction close to the
形成在被加工物1A的內部的改質層8的數量並未特別限定,可為1層,亦可為2層以上。因此,若在被加工物1A的內部形成複數改質層8,使聚光器上升,將雷射束的聚光點的位置,由被加工物1A的被保持面1b側朝向上面1a側隔著均等間隔,在更為上面1a側定位雷射束的聚光點來照射雷射束,藉此在被加工物1A的內部形成2層以上的改質層8。此外,亦可將保持平台進行複數次加工進給,形成複數層的改質層8,亦可將雷射束分歧而在將聚光點的位置定位在複數部位的狀態下,將保持平台進行加工進給而形成複數層的改質層8。在被加工物1A的內部,一沿著全部分割預定線2的伸張方向形成改質層8,雷射加工步驟的第2例即完成。The number of the modified
圖7所示之切削裝置20係用以實施後述之分割步驟的切削裝置之一例。切削裝置20係具有裝置基座200,在裝置基座200之上係具備有:具有吸引保持被加工物1的吸引保持面21a且可旋轉的保持平台21;將保持平台21以X軸方向進行加工進給的加工進給手段23;對被加工物1施行切削加工的切削手段25;及將切削手段25以Y軸方向進行分級進給的分級進給手段24。在保持平台21的周緣係配設有保持框架3的框架保持手段22。The cutting
加工進給手段23係具備有:以X軸方向延伸的滾珠螺桿230;連接於滾珠螺桿230的一端的馬達231;與滾珠螺桿230呈平行延伸的一對導軌232;及可以X軸方向移動的X軸基座233。在X軸基座233的其中一面係旋轉自如地支持有保持平台21,在X軸基座233的另一面係滑接一對導軌232,在形成在X軸基座233的中央部的螺帽螺合有滾珠螺桿230。藉由馬達231被驅動的滾珠螺桿230進行旋動,藉此X軸基座233可沿著導軌232以X軸方向移動,且將保持平台21以X軸方向進行加工進給。The machining feeding means 23 includes: a
分級進給手段24係具備有:以Y軸方向延伸的滾珠螺桿240;連接於滾珠螺桿240的一端的馬達241;與滾珠螺桿240呈平行延伸的一對導軌242;及剖面大致L字形狀的可動基台243。在可動基台243的上部係透過升降手段29而支持有切削手段25。另一方面,在可動基台243的下部係滑接一對導軌242,在形成在可動基台243的中央部的螺帽螺合有滾珠螺桿240。藉由馬達241被驅動的滾珠螺桿240進行旋動,藉此可動基台243可沿著導軌242以Y軸方向移動,且將切削手段25以Y軸方向進行分級進給。The stepwise feeding means 24 includes: a
升降手段29係至少具備以Z軸方向延伸的未圖示之滾珠螺桿;及連接於滾珠螺桿的一端的馬達290,藉由馬達290進行驅動,滾珠螺桿進行旋動,可使切削手段25以Z軸方向作升降。在保持平台21的加工進給的路徑上,係配設有檢測應分割被加工物1的區域(分割預定線2)的攝像手段30。攝像手段30係例如內置CCD畫像感測器的攝影機,可將被保持在保持平台21的被加工物1由上方進行攝像,且進行圖案匹配等畫像處理,藉此檢測分割預定線2。The elevating means 29 is provided with at least a ball screw extending in the Z-axis direction, not shown; and a
切削手段25係至少具備有:具有Y軸方向的軸心的心軸250;可旋轉地支持心軸250的心軸外殼251;及具備有被裝設在心軸250的前端的環狀切刃的切削刀26。切削手段25係形成為藉由心軸250進行旋轉,使切削刀26以預定速度旋轉的構成。The cutting means 25 includes at least a
切削刀26的切刃係以樹脂或金屬等接合材結合鑽石或立方晶氮化硼等砥粒而形成,如圖8所示,其前端部分具有尖成銳角的刀尖260,前端部分的剖面形狀形成為例如V形狀。切削刀26的前端角度261係以設定為30°~60°的範圍為佳。如上所示,藉由前端部分形成為V形狀的切削刀26,形成有細孔5的被加工物1的分割性變高。亦即,使切削刀26的刀尖260沿著分割預定線2切入時,即使被加工物1的厚度方向的切入深度淺,細孔5的開口6側亦壓寬,可以厚度方向效率佳地分割被加工物1。The cutting edge of the
(分割步驟的第1例) 實施雷射加工步驟之後,在切削裝置20中,藉由切削刀26,沿著分割預定線2切削被加工物1的厚度方向的一部分,藉此分割被加工物1。分割步驟的第1例係例如一邊透過圖9所示之支持治具40,以保持平台21保持被加工物1,一邊實施。在本實施形態中,係說明將在雷射加工步驟的第1例中進行雷射加工的被加工物1進行分割的情形。(First example of the dividing step) After the laser processing step is performed, the cutting
支持治具40係形成為矩形板狀,具備有:沿著分割預定線2的伸長方向伸長,俾以支持被加工物1的分割預定線2的兩側的支持部41;及形成在對應分割預定線2的位置的溝槽42。分割預定線2的兩側係指被加工物1之中未形成有分割預定線2的部分,夾著分割預定線2的一對外側1c。The
溝槽42係未支持分割預定線2的正下方的間隙,在圖示之例中,僅以一方向伸張而形成。支持治具40係藉由例如橡膠、胺基甲酸酯等柔軟構件所構成,在被加工物1分割時,支持治具40容易相對吸引保持面21a而沈入,可使對被加工物1的衝撞緩和。在如上所示所構成的支持治具40中,係以支持部41支持被加工物1的分割預定線2的兩側(一對外側1c),並且被定位在2個支持部41間的溝槽42的分割預定線2的正下方並無須支持,即可使被加工物1保持在保持平台21。The
此外,較佳為支持治具40係具有與被加工物1為同等以上的尺寸,而且,具有小於保持平台21的吸引保持面21a的尺寸。本實施形態所示之支持治具40係形成為與被加工物1為大致同等的尺寸,可在分割時,以被加工物1不會破損的方式進行支持。其中,支持治具40的尺寸或形狀係若按照所欲分割的被加工物1的尺寸或形狀來適當變更即可。In addition, it is preferable that the
當吸引保持在保持平台21透過帶件4而與框架3形成為一體的被加工物1時,將支持治具40載置於保持平台21的吸引保持面21a之後,由被貼著在被加工物1的被保持面1b的帶件4側,載置於支持治具40之上。此時,將分割預定線2的外側1c定位在支持部41,並且將溝槽42定位在分割預定線2的正下方。When the
接著,在被貼著在被載置於支持治具40之上的被加工物1的帶件4覆蓋吸引保持面21a的狀態下,以保持平台21吸引保持被加工物1。具體而言,若未圖示之吸引源的吸引力透過吸引保持面21a而作用於支持治具40時,如圖10所示,位於支持部41間的溝槽42的正上方的帶件4藉由吸引力而由被加工物1的被保持面1b被剝下,形成為仿照溝槽42的形狀來進行黏貼的狀態。亦即,位於溝槽42的正上方的細孔5的開口6露出而被加工物1形成為未受到任何支持的狀態。帶件4亦可被貼著在被保持面1b,但是當以切削刀26切削被加工物1時,以溝槽42的正上方的部分未受到任何支持的狀態,被加工物1的分割性更加提升。夾著溝槽42的2個支持部41間的距離H係以設定為藉由分割被加工物1而形成的晶片尺寸的1/5~1/6左右為佳。Next, the
藉由圖7所示之攝像手段30來檢測分割預定線2,進行分割預定線2與切削刀26的對位。接著,一邊以加工進給手段23將保持平台21以預定的加工進給速度以X軸方向進行加工進給,一邊使切削刀26旋轉,同時藉由升降手段29,使切削刀26由被加工物1的上面1a切入預定的切入深度L,切削被加工物1的厚度方向的一部分。若切削刀26之圖8所示之前端角度261被設定為例如60°,切入深度L係以被設定為被加工物1的厚度的1/5左右(100μm左右)為合適。藉由如上所示切削被加工物1的厚度方向的一部分,細孔5之擴徑的開口6側壓寬而位於溝槽42的上方的部分朝下方按壓,變得無法承受外力的被加工物1即被分割。其中,切削刀26的前端角度261愈成為銳角,被加工物1的分割性愈為提升,但是切削刀26的磨損量愈大,因此若按照被加工物1的材質來適當調整前端角度261或切入深度L即可。The line to be divided 2 is detected by the imaging means 30 shown in FIG. 7 , and the alignment of the line to be divided 2 and the
一沿著以被加工物1的一方向伸張的分割預定線2以切削刀26切削,一度將被加工物1由支持治具40卸下而使其旋轉90°,將溝槽42定位在未切削的分割預定線2的正下方之後,將被加工物1重新載置於支持治具40之上。之後,與上述同樣地,一邊在被貼著在被載置於支持治具40之上的被加工物1的帶件4覆蓋吸引保持面21a的狀態下,以保持平台21吸引保持被加工物1,一邊沿著分割預定線2進行上述同樣的切削,將被加工物1分割成各個晶片。支持治具40的溝槽42亦可對應格子狀的分割預定線2而形成為格子狀。此時,若在沿著以被加工物1的一方向伸張的分割預定線2進行切削之後,使保持平台21旋轉90°,藉此改變未切削的分割預定線2的方向,沿著分割預定線2進行上述同樣的切削即可。After cutting with the
本實施形態所示之切削刀26係前端部分的剖面形狀為V形狀,但是並非為限定於該形狀者。例如,亦可如圖11(a)所示,使用在其中一面具有傾斜的錐狀外周面270,且前端部分的剖面形狀形成為V字之單側形狀的切削刀27,實施分割步驟。此外,亦可如圖11(b)所示,使用具有前端部分的形狀呈平坦的刀尖280的切削刀28來實施分割步驟。使用該切削刀28來實施分割步驟時的切入深度係以設定為被加工物1的厚度的1/2左右(250μm左右)為佳。The cross-sectional shape of the tip portion of the
(分割步驟的第2例) 在分割步驟中,亦可使用例如圖12所示之治具平台50來實施。治具平台50係包含支持被加工物1的支持面51,形成對應分割預定線2的溝槽52,並且在以溝槽52予以區劃的各區域形成有吸引被加工物1的吸引孔53。治具平台50係被固定在圖13所示之治具基座54之上。在治具基座54的內部係形成有連通吸引孔53的吸引路55。在吸引路55係透過閥56而連接於吸引源57。藉由打開閥56,可通過吸引孔53而使吸引力作用於支持面51。此外,在治具基座54係形成有用以吸引保持治具平台50的吸引孔58。吸引孔58係透過閥56a而連接於吸引源57a。藉由打開閥56a,可通過吸引孔58而使吸引力作用於治具基座54的上面而吸引保持治具平台50。如上所示,與治具基座54形成為一體所構成的治具平台50係作為直接吸引保持被加工物1的保持平台來發揮功能。(Second example of the dividing step) In the dividing step, for example, the
若使用治具平台50來實施分割步驟,如圖14所示,將沿著分割預定線2形成有細孔5的被加工物1,由被保持面1b側載置於治具平台50。此時,將細孔5的開口6定位在治具平台50的溝槽52的上方側。接著,打開閥56,通過吸引路55而使吸引孔53與吸引源57相連通,且使吸引力作用於治具平台50的支持面51。藉此,以治具平台50直接吸引保持被加工物1。在分割步驟的第2例中,係可以治具平台50直接吸引保持被加工物1,因此亦可不使用上述帶件4。When the dividing step is performed using the
與分割步驟的第1例同樣地,一邊使切削刀26以例如箭號A方向旋轉,一邊使切削刀26由被加工物1的上面1a以預定切入深度切入,切削被加工物1的厚度方向的一部分。細孔5之擴徑的開口6側壓寬,位於溝槽52的上方的部分朝下方被按壓,變得無法承受外力的被加工物1即被分割。接著,沿著全部分割預定線2,進行上述同樣的切削,將被加工物1分割成各個晶片。Similar to the first example of the dividing step, while rotating the
如上所示,在本發明之加工方法中,由於具備有藉由切削被加工物1的厚度方向的一部分來進行分割的分割步驟,因此與使用制動裝置等的習知的加工方法相比,可減小對被加工物1的衝撞,可將被加工物1良好地分割成各個晶片。此外,在分割步驟中,由於僅以切削刀26切削被加工物1的厚度方向的一部分即可,因此與以切削刀26將被加工物1以厚度方向完全切斷的情形相比,可加快加工進給速度,晶片的生產性會提升。 在分割步驟的第1例中,在具有吸引保持面21a的保持平台21上,透過具有與被加工物1為同等以上的尺寸而且具有小於吸引保持面21a的尺寸的支持治具40而以保持平台21吸引保持被加工物1,因此可減小分割時對被加工物1的衝撞,且可將被加工物1良好地分割成各個晶片。 此外,在分割步驟的第2例中,係形成為以治具平台50直接吸引保持未貼著有帶件4的被加工物1的構成,因此可減小分割時對被加工物1的衝撞,可將被加工物1良好地分割成各個晶片。As described above, in the machining method of the present invention, since the dividing step for dividing by cutting a part of the
1、1A‧‧‧被加工物1a‧‧‧上面1b‧‧‧被保持面1c‧‧‧外側2‧‧‧分割預定線3‧‧‧框架4‧‧‧帶件5‧‧‧細孔6‧‧‧開口7‧‧‧變質區域8‧‧‧改質層9‧‧‧裂痕10‧‧‧雷射加工裝置100‧‧‧裝置基座101‧‧‧側壁11‧‧‧保持平台11a‧‧‧保持面12‧‧‧框架保持手段120‧‧‧框架載置台121‧‧‧夾具部13‧‧‧加工進給手段130‧‧‧滾珠螺桿131‧‧‧馬達132‧‧‧導軌133‧‧‧X軸基座14‧‧‧分級進給手段140‧‧‧滾珠螺桿141‧‧‧馬達142‧‧‧導軌143‧‧‧Y軸基座15‧‧‧雷射束照射手段150‧‧‧殼體151‧‧‧聚光器152‧‧‧聚光透鏡16‧‧‧攝像手段17‧‧‧升降手段170‧‧‧滾珠螺桿171‧‧‧馬達172‧‧‧導軌173‧‧‧升降板20‧‧‧切削裝置200‧‧‧裝置基座21‧‧‧保持平台21a‧‧‧保持面22‧‧‧框架保持手段23‧‧‧加工進給手段230‧‧‧滾珠螺桿231‧‧‧馬達232‧‧‧導軌233‧‧‧X軸基座24‧‧‧分級進給手段240‧‧‧滾珠螺桿241‧‧‧馬達242‧‧‧導軌243‧‧‧可動基台25‧‧‧切削手段250‧‧‧心軸251‧‧‧外殼26、27、28‧‧‧切削刀260、280‧‧‧刀尖261‧‧‧前端角度270‧‧‧外周面29‧‧‧升降手段290‧‧‧馬達30‧‧‧攝像手段40‧‧‧支持治具41‧‧‧支持部42‧‧‧溝槽50‧‧‧治具平台51‧‧‧支持部52‧‧‧溝槽53‧‧‧吸引孔54‧‧‧治具基座55‧‧‧吸引路56、56a‧‧‧閥57、57a‧‧‧吸引源58‧‧‧吸引孔H‧‧‧距離L‧‧‧切入深度LB‧‧‧雷射束O‧‧‧光軸P‧‧‧聚光點1. 1A‧‧‧Workpiece 1a‧‧‧Top surface 1b‧‧‧Retained surface 1c‧‧‧Outside 2‧‧‧Partitioning line 3‧‧‧Frame 4‧‧‧Tape 5‧‧‧Slim hole 6‧‧‧Opening 7‧‧‧Modified area 8‧‧‧Modified layer 9‧‧‧Crack 10‧‧‧Laser processing device 100‧‧‧Device base 101‧‧‧Sidewall 11‧‧‧Holding platform 11a ‧‧‧Holding surface 12‧‧‧Frame holding means 120‧‧‧Frame mounting table 121‧‧‧Clamp part 13‧‧‧Processing feeding means 130‧‧‧Ball screw 131‧‧‧Motor 132‧‧‧Guide rail 133 ‧‧‧X axis base 14‧‧‧Grading feed means 140‧‧‧Ball screw 141‧‧‧Motor 142‧‧‧Guide rail 143‧‧‧Y axis base 15‧‧‧Laser beam irradiation means 150‧ ‧‧Housing 151‧‧‧Condenser 152‧‧‧Condenser lens 16‧‧‧Camera means 17‧‧‧Lifting means 170‧‧‧Ball screw 171‧‧‧Motor 172‧‧‧Guide rail 173‧‧‧ Lifting Plate 20‧‧‧Cutting Device 200‧‧‧Device Base 21‧‧‧Holding Platform 21a‧‧‧Holding Surface 22‧‧‧Frame Holding Means 23‧‧‧Machining Feeding Means 230‧‧‧Ball Screws 231‧ ‧‧Motor 232‧‧‧Guide rail 233‧‧‧X-axis base 24‧‧‧Grading feed method 240‧‧‧Ball screw 241‧‧‧Motor 242‧‧‧Guide rail 243‧‧‧Moveable base 25‧‧ ‧Cutting means 250‧‧‧Spindle 251‧‧‧Shell 26, 27, 28‧‧‧Cutting tools 260, 280‧‧‧Tool tip 261‧‧‧Front end angle 270‧‧‧Outer peripheral surface 29‧‧‧Lifting means 290‧‧‧Motor 30‧‧‧Camera means 40‧‧‧Supporting fixture 41‧‧‧Supporting part 42‧‧‧Groove 50‧‧‧Judge platform 51‧‧‧Supporting part 52‧‧‧Groove 53 ‧‧‧Suction hole 54‧‧‧Judge base 55‧‧‧Suction path 56, 56a‧‧‧Valve 57, 57a‧‧‧Suction source 58‧‧‧Suction hole H‧‧‧distance L‧‧‧cut Depth LB‧‧‧laser beam O‧‧‧optical axis P‧‧‧focusing point
圖1係顯示被加工物之一例的斜視圖。 圖2係顯示雷射加工裝置之一例的構成的斜視圖。 圖3係顯示雷射加工步驟的剖面圖。 圖4係實施雷射加工步驟的第1例之後的被加工物的部分放大剖面圖。 圖5係說明聚光透鏡的開口數、與被加工物的折射率、與將開口數除以折射率後的值的關係性的說明圖。 圖6係實施雷射加工步驟的第2例之後的被加工物的部分放大剖面圖。 圖7係顯示切削裝置之一例的構成的斜視圖。 圖8係顯示切削刀的構成的部分放大剖面圖。 圖9係顯示分割步驟的第1例之中,在保持平台透過支持治具來載置被加工物的狀態的斜視圖。 圖10係顯示分割步驟的第1例的部分放大剖面圖。 圖11(a)係顯示切削刀的第2例的放大剖面圖。(b)係顯示切削刀的第3例的放大剖面圖。 圖12係顯示治具平台的構成的斜視圖。 圖13係顯示固定在治具基座的狀態的治具平台的構成的剖面圖。 圖14係顯示分割步驟的第2例的剖面圖。FIG. 1 is a perspective view showing an example of a workpiece. Fig. 2 is a perspective view showing the configuration of an example of a laser processing apparatus. Figure 3 is a sectional view showing the steps of laser processing. Fig. 4 is a partial enlarged cross-sectional view of the workpiece after the first example of the laser processing step is carried out. Fig. 5 is an explanatory diagram illustrating the relationship between the number of apertures of the condenser lens, the refractive index of the workpiece, and the value obtained by dividing the number of apertures by the refractive index. Fig. 6 is a partial enlarged cross-sectional view of the workpiece after the second example of the laser processing step is carried out. Fig. 7 is a perspective view showing the configuration of an example of a cutting device. Fig. 8 is a partially enlarged cross-sectional view showing the structure of the cutting blade. Fig. 9 is a perspective view showing the state in which the workpiece is placed on the holding platform through the support jig in the first example of the dividing step. Fig. 10 is a partially enlarged cross-sectional view showing the first example of the dividing step. Fig. 11(a) is an enlarged cross-sectional view showing the second example of the cutting blade. (b) is an enlarged cross-sectional view showing the third example of the cutting blade. Fig. 12 is a perspective view showing the structure of the jig platform. Fig. 13 is a cross-sectional view showing the structure of the jig table fixed to the jig base. Fig. 14 is a sectional view showing a second example of the dividing step.
1‧‧‧被加工物 1‧‧‧Processing
1a‧‧‧上面 1a‧‧‧above
1b‧‧‧被保持面 1b‧‧‧Retained surface
4‧‧‧帶件 4‧‧‧Tape
5‧‧‧細孔 5‧‧‧pore
6‧‧‧開口 6‧‧‧Opening
7‧‧‧變質區域 7‧‧‧Deterioration area
26‧‧‧切削刀 26‧‧‧Cutting knives
40‧‧‧支持治具 40‧‧‧Support fixture
41‧‧‧支持部 41‧‧‧Support Department
42‧‧‧溝槽 42‧‧‧Groove
260‧‧‧刀尖 260‧‧‧ tip
H‧‧‧距離 H‧‧‧distance
L‧‧‧切入深度 L‧‧‧cut depth
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