TWI772851B - 載台與基板溫度控制方法 - Google Patents

載台與基板溫度控制方法 Download PDF

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TWI772851B
TWI772851B TW109126414A TW109126414A TWI772851B TW I772851 B TWI772851 B TW I772851B TW 109126414 A TW109126414 A TW 109126414A TW 109126414 A TW109126414 A TW 109126414A TW I772851 B TWI772851 B TW I772851B
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Taiwan
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support plate
stage
gas
shaft
chamber
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TW109126414A
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English (en)
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TW202121577A (zh
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木田直哉
巽新
關谷健二
相川尚哉
高梨雅也
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日商日本發條股份有限公司
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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Abstract

載台具備：軸、軸上的第1支撐板、配置於在第1支撐板內形成之溝槽內的加熱器，以及以配置於軸內且對第1支撐板吹拂氣體的方式構成的氣體供應管。第1支撐板亦可具有圓盤形狀，平行於第1支撐板之表面的氣體供應管的截面亦可與圓盤形狀的中心重疊。

Description

載台與基板溫度控制方法
本發明之實施型態係關於用以支撐基板的載台、具備載台的成膜裝置或膜加工裝置，以及控制基板之溫度的方法。
半導體器件搭載於幾乎所有的電子設備，對於電子設備的功能擔任重要的角色。半導體器件係利用矽等所具有之半導體特性的器件，係藉由將經圖案化之各種半導體膜或絕緣膜、導電膜堆疊於基板上來構成。此等膜層係利用蒸鍍、濺鍍法、化學氣相沉積（CVD）法或者基板之化學反應等來形成，藉由光刻製程來加工（圖案化）。
於上已述之膜層的特性大大受到形成膜層時或者將之圖案化時的條件所影響。其中之一係基板的溫度。在多數情況下，為了在整個基板維持均勻的溫度，係以用以設置基板的載置台（以下寫作載台）之溫度盡可能變得均勻的方式來控制。載台的溫度控制，係透過在加熱設置於載台內之加熱器的同時，在設置於載台內的冷媒用之流道流通冷媒來進行（參照專利文獻1、2）。
『專利文獻』 《專利文獻1》：日本專利公開第2018-056333號公報 《專利文獻2》：日本專利公開第2014-175491號公報
本發明之實施型態的課題之一係提供用以精密控制基板之溫度的載台。或者，本發明之實施型態的課題之一係提供具有此載台的成膜裝置或膜加工裝置。或者，本發明之實施型態的課題之一係提供精密控制基板之溫度的方法。
本發明之實施型態之一係載台。此載台具備：軸、軸上的第1支撐板、配置於在第1支撐板內形成之溝槽內的加熱器，以及以配置於軸內且對第1支撐板吹拂氣體的方式構成的氣體供應管。
本發明之實施型態之一係控制基板之溫度的方法。此方法包含：於具備第1支撐板與第1支撐板下之軸的載台上配置基板一事、使用配置於在第1支撐板形成之溝槽內的加熱器來加熱第1載台一事，以及自配置於軸內的氣體供應管對第1支撐板吹拂氣體一事。
以下參照圖式同時說明在本申請案中所揭露之發明的各實施型態。惟本發明可在不脫離其要旨的範圍中以各式各樣的型態實施，並非受以下示例之實施型態的記載內容所限定解釋者。
圖式為了使說明更為明確，相比於實際的態樣，會有示意表示各部分之幅寬、厚度、形狀等的情形，但終究為一例，而非限定本發明之解釋者。並且，在本說明書與各圖中，對於具備與已針對既有之圖說明者相同之功能的元件，有時會賦予相同之符號，並省略重複之說明。
於本說明書及圖式中，在將相同或者類似的多個構造概括標示時會使用相同的符號，並在將一個構造之中的多個部分各自區別標示時，會使用相同的符號進而使用連字符與字母。
（第1實施型態）
在本實施型態中，說明係為本發明之實施型態之一的載台100及係為具備載台100之膜加工裝置的蝕刻裝置200。
1.蝕刻裝置
圖1揭示了用以對各種膜層進行乾蝕刻之蝕刻裝置200的剖面示意圖作為膜加工裝置之一例。蝕刻裝置200具有腔室202，對形成於基板上的導電體、絕緣體、半導體等之膜層進行蝕刻的空間係由腔室202提供。
於腔室202連接有排氣裝置204，藉此可將腔室202內設定成減壓環境。於腔室202更設置有用以導入反應氣體的導入管206，可透過閥208對腔室內導入蝕刻用的反應氣體。作為反應氣體，可列舉例如：四氟化碳（CF4 ）、八氟環丁烷（c-C4 F8 ）、十氟環戊烷（c-C5 F10 ）、六氟丁二烯（C4 F6 ）等含氟有機化合物。
於腔室202上部可中介導波管210設置微波源212。微波源212具有用以供應微波的天線等，輸出例如2.45 GHz之微波或13.56 MHz之無線電波（RF）等高頻率之微波。在微波源212產生的微波藉由導波管210向腔室202之上部傳播，中介包含石英或陶瓷等的窗口214導向腔室202內部。藉由微波將反應氣體電漿化，並藉由電漿所包含之電子或離子、自由基來進行膜層的蝕刻。
為了設置基板，於腔室202下部設置有本發明之一實施型態相關之載台100。未圖示之基板係設置於載台100。於載台100連接有電源220，對載台100提供高頻率電力，而在相對於載台100之表面、基板表面垂直的方向形成由微波所致之電場。於腔室202的上部或側面可進一步設置磁鐵216。作為磁鐵216，可為永久磁鐵，亦可為具有電磁線圈的電磁鐵。透過磁鐵216做出平行於載台100及基板表面的磁場分量，並藉由與由微波所致之電場的協作，電漿中之電子受到勞侖茲力而共振，束縛於載台100及基板表面。其結果，可使高密度的電漿產生於基板表面。
於在蝕刻裝置200中控制基板之溫度時，係如後所述使用設置於載台100的護套型加熱器（後述）124，並且供應氣體（亦寫作冷卻用氣體）用以冷卻載台100之中心部。職是，於蝕刻裝置200設置有控制護套型加熱器124的加熱器電源222、氣體供應裝置150。雖未圖示，但亦可將用以冷卻自氣體供應裝置150供應之冷卻用氣體的冷卻裝置連接至氣體供應裝置150。於載台100亦可進一步連接用以將基板固定於載台100的靜電吸盤用電源224，或進行環流於載台100內部之液體之溫度控制的溫度控制器226、用以使載台100旋轉的旋轉控制裝置（並未圖示），作為任意構造。於腔室202內可配置搬運基板的機構。此機構並無限制，但舉例而言，可如圖1所示配置具備機器手臂的搬運機器人230。
1-2.載台
於圖2A繪示實施型態之一所相關之載台100的立體示意圖。如圖2A所示，載台100具有軸140，並於軸140上具備受到軸140支撐的第1支撐板120及第1支撐板上的第2支撐板110，作為基本之構造。在圖2A中，第1支撐板120與第2支撐板110分別具有上側面為圓的圓盤形狀，此等之形狀並無限制，亦可為適於所使用之基板之形狀的形狀。舉例而言，第1支撐板120與第2支撐板110亦可具備上側面為四邊形的長方體之形狀。
於圖2B繪示載台100的俯視示意圖。在圖2B中，第2支撐板110並未圖示。於第1支撐板120，沿其上側面設置有一個或者多個溝槽（參照圖3B）122，於各個溝槽122配置有護套型加熱器124。於護套型加熱器124的內部設置有與加熱器電源222（參照圖1）電性連接的電熱線（加熱線），透過源自加熱器電源222的電力來加熱護套型加熱器124。溝槽122係以整個第1支撐板120可受到護套型加熱器124均勻加熱的方式形成。第1支撐板120的熱傳往第2支撐板110，藉由此熱來加熱配置於第2支撐板110上的基板。雖未圖示，但亦可於第2支撐板110亦設置溝槽，並在第1支撐板120的溝槽122與第2支撐板110的溝槽內容置護套型加熱器124。或者亦可不在第1支撐板120設置溝槽122，而在第2支撐板110設置溝槽並於其中配置護套型加熱器124。
第1支撐板120與第2支撐板110包含金屬，金屬係選自具有10 W／mK以上且430 W／mK以下之熱傳導率的金屬。藉由使用具有高熱傳導率的金屬，可以高效率接收護套型加熱器124所產生的熱能。並且，金屬以具有3×10-6 ／K以上且25×10-6 ／K以下之熱膨脹率為佳。可列舉鈦或鋁、不鏽鋼等金屬作為滿足此種特性之具體的金屬。第2支撐板110所包含之金屬與第1支撐板120所包含之金屬可相同，亦可相異。在相異的情況下，可以第1支撐板120與第2支撐板110所包含之金屬之熱膨脹率的差呈250×10-6 ／K以下的方式選擇各自的金屬。藉此，可抑制因熱膨脹所致之變形，可提供可靠性高的載台100。
第2支撐板110與第1支撐板120互相接合。第1支撐板120與第2支撐板110的接合，可藉由熔接或螺絲鎖固、硬焊來進行。作為可在硬焊中使用的焊料，可列舉：包含銀、銅及鋅的合金；包含銅與鋅的合金；包含微量磷的銅；鋁或其合金；包含鈦、銅及鎳的合金；包含鈦、鋯及銅的合金；包含鈦、鋯、銅及鎳的合金等。
沿圖2B之鏈線A―A’、B―B’之截面的示意圖分別繪示於圖3A、圖3B。如圖3A所示，於軸140內具備與氣體供應裝置150連接的氣體供應管142。氣體供應管142具有中空結構，係以自氣體供應裝置150供應的冷卻用氣體流通於氣體供應管142內部，之後朝第1支撐板120之方向供應的方式來構成。氣體供應管142所包含之材料並無限制，使用：鐵或鋁、銅等金屬；不鏽鋼或黃銅等合金；或者氯乙烯或聚乙烯等乙烯聚合物；作為材料即可。亦可採用聚(四氟乙烯)等含氟高分子作為乙烯聚合物。
中介氣體供應管142而供應的冷卻用氣體，係用來冷卻第1支撐板120的中心部分，使之較外周部分要來得低溫。氣體供應管142以其中心軸穿過第1支撐板120之中心的方式設置為佳。因此，在第1支撐板120之平面形狀為圓的情況下（亦即，在第1支撐板120為圓盤形狀的情況下），以氣體供應管142之中心軸穿過圓之中心的方式設置氣體供應管142為佳。惟氣體供應管142的配置無須如此嚴密控制，只要以第1支撐板120之中心與其附近能夠冷卻的方式配置氣體供應管142即可。因此，舉例而言，亦可以平行於第1支撐板120之上側面的氣體供應管142的截面與第1支撐板120之中心重疊的方式配置氣體供應管142。
氣體供應管142之前端與第1支撐板120間的距離D（參照圖3A），可考量第1支撐板120的大小或冷卻用氣體的供應量、冷卻用氣體的溫度等適當設定，可選自例如1 mm以上且30 mm以下、5 mm以上且20 mm以下或者5 mm以上且15 mm以下之範圍。藉由將距離D設定為上述範圍，冷卻用氣體的氣流不會在與第1支撐板120接觸前大幅擴散，而可選擇性冷卻第1支撐板120的中心部分。同時在中心部分防止大的溫度梯度產生。
冷卻用氣體以腔室202內不對其開放為佳。此係由於腔室202內之氣體的組成或壓力會因冷卻用氣體而變化之故。因此，軸140或第1支撐板120以冷卻用氣體不會洩漏至腔室202內的方式構成為佳。舉例而言，第1支撐板120係以「至少不在與軸140重疊的區域設置貫通孔以屏蔽冷卻用氣體」的方式構成。再者，可如圖3A所示以「在與軸140重疊的區域中於腔室202設置一個或者多個貫通孔202a以排出冷卻用氣體」的方式構成蝕刻裝置200。藉由此種構造，如圖3A的虛線所示，朝第1支撐板120之方向供應的冷卻用氣體可與第1支撐板120的中心接觸，之後在軸140內改變方向，往腔室202的外部排出。
作為冷卻用氣體，可利用空氣、氮氣、氬氣或者此等的混合氣體等，其溫度亦可為室溫或者選自－20℃以上且30℃以下、0℃以上且25℃以下或者10℃以上且25℃以下之範圍即可。在選擇室溫以外之溫度的情況下，使用冷卻裝置控制冷卻用氣體的溫度即可。冷卻用氣體的流量亦可適當調整，選自例如10 L／min以上且1000 L／min以下、30 L／min以上且500 L／min以下或者30 L／min以上且300 L／min以下之範圍即可。
如同前述，於第1支撐板120的上側面形成有溝槽122，沿溝槽122配置有護套型加熱器124（圖3B）。護套型加熱器124的結構亦無限制，使用兩端具有端子的雙邊端子型護套型加熱器或僅單側具有兩個端子的單邊端子型護套型加熱器任一者皆可。護套型加熱器124的加熱線與佈線126連接，佈線126延伸於軸140內，中介設置於腔室202的貫通孔202a而往外部抽出，連接至加熱器電源222。
於軸140內亦可設置用以控制冷卻用氣體之排出的氣體排出管144。舉例而言，如圖4A所示，中介腔室202的貫通孔202a將一個或者多個氣體排出管144***軸140內。氣體排出管144之端部的位置係任意設定，至第1支撐板120的距離可與距離D（參照圖3A）相同，亦可較距離D還要小或還要大。氣體排出管144可以沿軸140之內壁的方式配置，或者亦可如圖4B所示以與氣體供應管142相接的方式配置。雖未圖示，但亦可於氣體排出管144連接氣體排氣裝置來吸取冷卻用氣體。藉由採用此種構造，可更精密控制冷卻用氣體的氣流。
或者亦可使用冷卻用氣體之供應能力與排出能力兼備的氣體供應／排出管。舉例而言，可如圖5A、圖5B所示，可使用具備「與氣體供應裝置150連接之氣體供應部142a」及「以包圍氣體供應部142a的方式配置且與氣體供應部142a一體化的氣體排出部144a」的氣體供應／排出管146來代替氣體供應管142與氣體排出管144。在氣體供應／排出管146中，氣體供應部142a與氣體排出部144a係以單一的隔牆分離。藉由使用此種氣體供應／排出管146，可有效活用軸140內的空間，其結果，可增加獨立控制之護套型加熱器124的數量，此事有助於更精密控制載台100的溫度。
以往之膜加工裝置或成膜裝置所配置的載台，為了均勻加熱配置於載台上的整個基板，係設計成整個支撐板呈均勻之溫度。亦即，如圖6之概念圖的直線（c）所表示，自支撐板之中心部分至外周部分呈相同之溫度的方式來決定護套型加熱器的數量或配置等。然而，在膜加工裝置或成膜裝置內無法忽視來自載台外周部分的放熱，熱會朝如圖1所示之腔室202、搬運機器人230等用以搬運基板的機構、用以沿上下方向移動基板的銷、配置於載台附近的保護治具（並未圖示）等逸散。其結果，即使將載台設計成會在無熱之逸散的情況下賦予由直線（c）表示之理想的溫度剖面（temperature profile），載台周邊部分的溫度仍會降低（虛線（a））而於基板產生溫度分布。
相對於此，在本發明之實施型態之一所相關之載台100中，係透過護套型加熱器124並中介第1支撐板120來加熱第2支撐板110，同時對第1支撐板120的中心部分供應冷卻用氣體。其結果，如虛線（b）所示，可以中心部分的溫度變得較外周部分的溫度還要低的方式控制第1支撐板120或第2支撐板110的溫度。藉由做出此種溫度剖面，與來自第1支撐板120或第2支撐板110之外周部分的熱之逸散的平衡成立，可實現由直線（c）表示之理想的溫度剖面或接近其之溫度剖面。其結果，變得能夠在將整個基板保持在均勻之溫度下就此加工基板上的膜層或者於基板上製作膜層。
1-3.變形例
載台100的結構並不受限於於上已述之結構，可採用各式各樣的結構。舉例而言，亦可如圖7A所示於第1支撐板120下側面設置用以環流流體的溝槽（流道）128。在此情況下，於載台100可設置用以覆蓋流道128的第3支撐板130，冷卻用氣體係吹拂至第3支撐板130。第3支撐板130亦可包含能夠使用在第1支撐板120或第2支撐板110的金屬。第3支撐板130係藉由熔接或螺絲鎖固、硬焊來固定於第1支撐板120。雖未圖示，但亦可不將流道128設置於第1支撐板120，而設置於第3支撐板130。藉由將溫度受到溫度控制器226（參照圖1）控制的流體流通於流道128，可更精密控制基材的溫度。媒介在將載台100冷卻的情況或將之加熱的情況下皆可使用。作為媒介，可使用水、異丙醇或乙二醇等醇、矽油、氟碳化物等氟系流體等液體的媒介。
並且，於第1支撐板120與第3支撐板130亦可設置一個或者多個用以設置溫度感測器的開口132。作為溫度感測器，可利用熱電偶等。
或者亦可如圖7B所示，設置一個或多個貫通第1支撐板120與第2支撐板110及第3支撐板130的貫通孔134。於貫通孔134，中介氣體導入管136連接有氦氣等熱傳導率高之氣體的供應源。藉此，可將具有高熱傳導率的氣體流通於第2支撐板110與基板的縫隙，可將護套型加熱器124的熱能以高效率傳往基板。此外，貫通孔134可設置成與軸140重疊，或者亦可如圖7B所示設置於不與軸140重疊的區域。藉由設置成不與軸140重疊，可防止冷卻用氣體自貫通孔134洩漏而擴散至腔室202內，並且，可在軸140內確保用以配置佈線126或氣體供應管142的寬廣空間。
或者亦可如圖7C所示將靜電吸盤160設置於第1支撐板120上，作為用以將基板固定於載台100上的機構。靜電吸盤160，舉例而言，可具有以絕緣性之膜層162包覆靜電吸盤電極164的結構。藉由自靜電吸盤用電源224（參照圖1）對靜電吸盤電極164施加高電壓（數百V至數千V），可透過「於靜電吸盤電極164產生的電荷」以及「於基板背面產生且與於靜電吸盤電極164產生之電荷相反極性的電荷」的庫侖力來固定基板。作為絕緣體，可使用氧化鋁或氮化鋁、氮化硼等陶瓷。此外，絕緣性之膜層162無須完全為絕緣性，亦可具有某種程度的導電性（例如109 Ω·cm至1012 Ω·cm數量級的電阻率）。在此情況下，膜層162可在於上已述之陶瓷摻雜氧化鈦或氧化鋯、氧化鉿等金屬氧化物。於靜電吸盤160的周邊亦可設置用以決定基板之位置的肋166。
如上所述，在本實施型態相關之載台100中，係以第1支撐板120或第2支撐板110之中心部分的溫度變得較外周部分的溫度還要低的方式，自配置於軸140內的氣體供應管142向第1支撐板120的中心部分供應冷卻用氣體。其結果，可形成來自護套型加熱器124的熱之輸入與來自外周部分的熱之逸散的良好平衡，整個第1支撐板120或第2支撐板110呈均勻之溫度，變得能夠將整個基板的溫度控制為均勻。
（第2實施型態）
在本實施型態中，使用圖8至圖10說明具有已在第1實施型態敘述之載台100的各種成膜裝置。關於與第1實施型態相同的構造，有時會勉予省略記述。
1.CVD裝置
圖8係為成膜裝置之一的CVD裝置300的示意圖。CVD裝置300具有腔室302，提供使反應氣體進行化學反應的場所。
於腔室302連接有排氣裝置304，可減低腔室302內的壓力。於腔室302進一步設置用以導入反應氣體的導入管306，透過閥308對腔室內導入成膜用的反應氣體。作為反應氣體，可取決於所要製作的膜層來使用各種氣體。氣體在常溫下亦可為液體。舉例而言，藉由使用矽烷或二氯矽烷、四乙氧基矽烷等，可形成矽、氧化矽、氮化矽等之薄膜。或者，藉由使用氟化鎢或三甲基鋁等，可形成鎢或鋁等之金屬薄膜。
如同蝕刻裝置200，於腔室302上部亦可中介導波管310設置微波源312。在微波源312產生的微波會透過導波管310導向腔室302內部。藉由微波將反應氣體電漿化，並藉由電漿所包含之各種活性物種來促進氣體的化學反應，由化學反應獲得的生成物會堆積於基板上而形成薄膜。可將用以使電漿之密度增大的磁鐵344設置於腔室302內作為任意構造。於腔室302下部設置有已在第1實施型態敘述的載台100，可在基板設置於載台100上的狀態下進行薄膜的堆積。如同蝕刻裝置200，於腔室302的側面亦可進一步設置磁鐵316、318。
於載台100亦可進一步連接有用以將高頻電力供應至載台100的電源320、控制護套型加熱器124的加熱器電源322、靜電吸盤用電源324、進行環流於載台100內部之流體之溫度控制的溫度控制器326。於CVD裝置300亦可進一步設置有用以使載台100旋轉的旋轉控制裝置（並未圖示）作為任意構造。
2.濺鍍裝置
圖9係為成膜裝置之一的濺鍍裝置400的示意圖。濺鍍裝置400具有腔室402，提供用於「高速之離子與靶材的碰撞」及「屆時產生之靶材原子的堆積」的場所。
於腔室402連接有用以將腔室402內減壓的排氣裝置404。於腔室402設置有用以將氬氣等濺鍍氣體導向腔室402的導入管406及閥408。
於腔室402下部設置有支承包含成膜之材料之靶材且發揮作為陰極之功能的靶材載台410並於其上設置靶材412。於靶材載台410連接有高頻電源414，可藉由高頻電源414於腔室402內產生電漿。
於腔室402上部可設置已在第1實施型態敘述的載台100。在此情況下，會於基板設置於載台100下的狀態下進行薄膜的形成。如同蝕刻裝置200或CVD裝置300，於載台100亦可進一步連接有用以將高頻電力供應至載台100的電源420、加熱器電源422、靜電吸盤用電源424、溫度控制器426。於濺鍍裝置400亦可進一步設置有用以使載台100旋轉的旋轉控制裝置（並未圖示）作為任意構造。
因在腔室402內產生之電漿而加速的氬離子碰撞靶材412，靶材412的原子彈出。所彈出的原子在擋板416開啟的期間，朝設置於載台100下的基板飛行而堆積。
在本實施型態中，雖示例載台100設置於腔室402之上部而靶材載台410設置於腔室402之下部的構造，但本實施型態並不受限於此構造，亦可以靶材位於載台100之上的方式構成濺鍍裝置400。或者，亦可以基板之主面相對於水平面垂直配置的方式設置載台100，並以與之相向而對的方式設置靶材載台410。
3.蒸鍍裝置
圖10係為成膜裝置之一的蒸鍍裝置500的示意圖。蒸鍍裝置500具有腔室502，提供用於「在蒸鍍源510中之材料的蒸發」以及「使蒸發的材料朝基板上堆積」的空間。
於腔室502連接有用以使腔室502內高真空化的排氣裝置504。於腔室502設置有用以將腔室502回復至大氣壓的導入管506，透過閥508將氮氣或氬氣等惰性氣體（inert gas）導入腔室502內。
於腔室502上部可設置已在第1實施型態敘述的載台100。在基板設置於載台100下的狀態下進行材料的堆積。如同蝕刻裝置200、CVD裝置300、濺鍍裝置400，於載台100亦可進一步連接有加熱器電源522、靜電吸盤用電源524、溫度控制器526。於蒸鍍裝置500亦可進一步設置有用以使載台100旋轉的旋轉控制裝置528作為任意構造。雖未圖示，但載台100亦可進一步具有用以將金屬遮罩固定於基板與蒸鍍源510之間的遮罩架。藉此，可以金屬遮罩之開口部重疊於堆積材料之區域的方式，於基板附近配置金屬遮罩。
蒸鍍源510設置於腔室的下側，蒸鍍的材料填充於蒸鍍源510。於蒸鍍源510設置有用以加熱材料的加熱器，加熱器係藉由控制裝置512來控制。使用排氣裝置504使腔室502內高真空化，並加熱蒸鍍源510以使材料氣化，藉此開始蒸鍍。藉由在蒸鍍的速度呈定值時開啟擋板514，在基板上開始材料的堆積。
如上所述，於本實施型態之CVD裝置300、濺鍍裝置400、蒸鍍裝置500等成膜裝置，可具有已在實施型態1說明的載台100。因此，可精密控制且以高響應性調整基板的溫度，變得容易控制所形成之薄膜的物性。
『實施例』
在本實施例中，闡述量測已在第1實施型態敘述之載台100的溫度剖面的結果。
在本實施例中，使用具有鋁製之第1支撐板120與第2支撐板110的載台100（參照圖2A）。如圖11所示，於第1支撐板120配置有三個護套型加熱器（第1護套型加熱器124a、第2護套型加熱器124b、第3護套型加熱器124c；各自之外徑310 mm、額定容量1200 W）。第1護套型加熱器124a與軸140重疊，以捲繞與氣體供應管142重疊之區域數次的方式設置。以圍繞第1護套型加熱器124a的方式配置纏捲成幾乎三層的第2護套型加熱器124b。第3護套型加熱器124c以呈最靠近第1支撐板120之外周部分的方式配置。第1支撐板120與第2支撐板110的總厚度為33 mm，直徑分別為322 mm。於第1支撐板120與第2支撐板110配置3個熱電偶，對護套型加熱器124通電以進行加熱。加熱係藉由以使用200V、10A之電源並透過PID控制來升溫至設定溫度的方式對各個護套型加熱器124施加電流來進行。使用室溫之空氣作為冷卻用氣體，中介氣體供應管142以100 L／min的流速朝第1支撐板120的中心部分供應。
於第2支撐板110之表面設置檔片（dummy wafer）並進行加熱，在溫度達到恆定狀態時量測17處的溫度。依據其結果將示意表示溫度分布的圖繪示於圖12A。如同由圖12A所理解般，第2支撐板110之中心部分的溫度較外周部分低。具體而言，中心部分A的溫度為145.2℃，外周部分B的溫度為155℃，其差為9.8℃。
在不供應冷卻用氣體下進行相同之實驗而獲得之溫度分布的示意圖繪示於圖12B。如同由此圖所理解般，在不供應冷卻用氣體的情況下，第2支撐板110的溫度在整體上均勻，中心部分A的溫度為152.4℃，外周部分B的溫度為155℃，其差為2.6℃。
由以上情事，已確認到：在本實施型態之一所相關之載台100中，藉由供應冷卻用氣體，可將載台100之第1支撐板120或第2支撐板110之中心部分的溫度設定得較外周部分的溫度還要低。將載台100使用在成膜裝置或膜加工裝置時由於會自外周部分發生熱之逸散，故藉由使用本實施型態之一所相關之載台100，可實現理想之溫度剖面，將整個基板控制在均勻之溫度。
作為本發明之實施型態而於上已述之各實施型態，只要不互相矛盾，即可適當組合而實施。並且，本發明所屬技術領域中具有通常知識者依據各實施型態適當進行構成元件之追加、刪除或設計變更者，只要具備本發明之要旨，即包含於本發明之範圍。
並且，即使係與由於上已述之各實施型態所促成之作用效果相異的其他作用效果，對於自本說明書之記載顯而易見者或對於本發明所屬技術領域中具有通常知識者而言得輕易預測者，理當理解為由本發明所促成者。
100:載台 110:第2支撐板 120:第1支撐板 122:溝槽 124:護套型加熱器 124a:第1護套型加熱器 124b:第2護套型加熱器 124c:第3護套型加熱器 126:佈線 128:流道 130:第3支撐板 132:開口 134:貫通孔 136:氣體導入管 140:軸 142:氣體供應管 142a:氣體供應部 144:氣體排出管 144a:氣體排出部 146:氣體供應／排出管 150:氣體供應裝置 160:靜電吸盤 162:膜層 164:靜電吸盤電極 166:肋 200:蝕刻裝置 202:腔室 202a:貫通孔 204:排氣裝置 206:導入管 208:閥 210:導波管 212:微波源 214:窗口 216:磁鐵 220:電源 222:加熱器電源 224:靜電吸盤用電源 226:溫度控制器 230:搬運機器人 300:CVD裝置 302:腔室 304:排氣裝置 306:導入管 308:閥 310:導波管 312:微波源 316:磁鐵 318:磁鐵 320:電源 322:加熱器電源 324:靜電吸盤用電源 326:溫度控制器 344:磁鐵 400:濺鍍裝置 402:腔室 404:排氣裝置 406:導入管 408:閥 410:靶材載台 412:靶材 414:高頻電源 416:擋板 420:電源 422:加熱器電源 424:靜電吸盤用電源 426:溫度控制器 500:蒸鍍裝置 502:腔室 504:排氣裝置 506:導入管 508:閥 510:蒸鍍源 512:控制裝置 514:擋板 522:加熱器電源 524:靜電吸盤用電源 526:溫度控制器 528:旋轉控制裝置
〈圖1〉本發明之實施型態相關之膜加工裝置的剖面示意圖。
〈圖2A〉本發明之實施型態相關之載台的立體示意圖。
〈圖2B〉本發明之實施型態相關之載台的俯視示意圖。
〈圖3A〉本發明之實施型態相關之載台的剖面示意圖。
〈圖3B〉本發明之實施型態相關之載台的剖面示意圖。
〈圖4A〉本發明之實施型態相關之載台的剖面示意圖。
〈圖4B〉本發明之實施型態相關之載台的剖面示意圖。
〈圖5A〉本發明之實施型態相關之載台之氣體供應管的立體示意圖。
〈圖5B〉本發明之實施型態相關之載台之氣體供應管的剖面示意圖。
〈圖6〉表示本發明之實施型態相關之載台之溫度分布的概念圖。
〈圖7A〉本發明之實施型態相關之載台的剖面示意圖。
〈圖7B〉本發明之實施型態相關之載台的剖面示意圖。
〈圖7C〉本發明之實施型態相關之載台的剖面示意圖。
〈圖8〉本發明之實施型態相關之成膜裝置的剖面示意圖。
〈圖9〉本發明之實施型態相關之成膜裝置的剖面示意圖。
〈圖10〉本發明之實施型態相關之成膜裝置的剖面示意圖。
〈圖11〉在實施例中之載台的俯視示意圖。
〈圖12A〉在實施例中之第1支撐板的溫度分布。
〈圖12B〉在比較例中之第1支撐板的溫度分布。
100:載台
110:第2支撐板
120:第1支撐板
140:軸
142:氣體供應管
150:氣體供應裝置
202:腔室
202a:貫通孔

Claims (12)

  1. 一種載台，其具備：軸、前述軸上的第1支撐板、配置於在前述第1支撐板內形成之溝槽內的加熱器，以及以配置於前述軸內的氣體供應管，前述軸與前述氣體供應管以僅對前述第1支撐板與前述軸重疊的部分吹拂氣體的方式構成，前述加熱器在垂直於前述第1支撐板之上側面且包含前述第1支撐板之中心軸的任何截面中，皆具有與供應前述氣體之空間重疊的部分與不重疊的部分。
  2. 如請求項1所述之載台，其中前述第1支撐板具有圓盤形狀，平行於前述第1支撐板之表面的前述氣體供應管的截面與前述圓盤形狀的中心重疊。
  3. 如請求項1所述之載台，其中前述第1支撐板係以屏蔽前述氣體而不對配置有前述載台的腔室內釋放前述氣體的方式構成。
  4. 如請求項1所述之載台，其中在前述第1支撐板上更具備第2支撐板。
  5. 如請求項1所述之載台，其中在前述第1支撐板下更具備第3支撐板， 前述第1支撐板具有用以循環流體的流道。
  6. 如請求項1所述之載台，其中前述第1支撐板具有不與前述軸重疊的貫通孔。
  7. 如請求項1所述之載台，其更包含包圍前述氣體供應管的多個氣體排出管。
  8. 一種基板溫度控制方法，其包含：於具備第1支撐板與前述第1支撐板下之軸的載台上配置基板一事、使用配置於在前述第1支撐板形成之溝槽內的加熱器來加熱第1載台一事，以及自配置於前述軸內的氣體供應管僅對前述第1支撐板之與前述軸重疊的部分吹拂氣體一事，前述加熱器在垂直於前述第1支撐板之上側面且包含前述第1支撐板之中心軸的任何截面中，皆具有與供應前述氣體之空間重疊的部分與不重疊的部分。
  9. 如請求項8所述之基板溫度控制方法，其中第1支撐板具有圓盤形狀，前述氣體的前述吹拂係以前述第1支撐板之中心的溫度變得低於前述第1支撐板之外周部分的溫度之方式進行。
  10. 如請求項8所述之基板溫度控制方法，其中前述第1支撐板具有圓盤形狀， 前述氣體供應管係以平行於前述第1支撐板之表面的前述氣體供應管的截面與前述圓盤之形狀的中心重疊的方式配置。
  11. 如請求項8所述之基板溫度控制方法，其更包含以不對配置有前述載台的腔室內釋放前述氣體的方式將前述氣體排出至前述腔室外一事。
  12. 如請求項8所述之基板溫度控制方法，其更包含將流體流通於在前述第1支撐板形成的流道一事。
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