TWI772727B

TWI772727B - Device for cleaning semiconductor elements

Info

Publication number: TWI772727B
Application number: TW108147769A
Authority: TW
Inventors: 蓋家駒; 黃泰源
Original assignee: 日月光半導體製造股份有限公司
Priority date: 2019-12-26
Filing date: 2019-12-26
Publication date: 2022-08-01
Also published as: TW202124060A

Abstract

The subject application relates to a cleaning device. The cleaning device includes a cleaning element and a baffle. The cleaning element is configured to inject a first fluid and a second fluid toward an object to be cleaned. The baffle surrounds the cleaning element. The baffle has an opening through which the cleaning element passes. After a cleaning operation, a density of the particles of the remainder on the object to be cleaned is equal to or less than about 12 particles/mm².

Description

半導體元件之清潔裝置 Semiconductor device cleaning device

本揭露係有關於清潔裝置，特別是有關用於半導體元件之清潔裝置。 The present disclosure relates to cleaning devices, particularly to cleaning devices for semiconductor devices.

隨著晶片封裝技術的純熟與競爭，不僅封裝之體積越來越小及晶片功能越來越多樣化，晶片封裝之相關製程亦越來越複雜，相應之人力需求也不斷地上升，尤其對於治具、載具等等之處理流程常需要耗費大量的人力。 With the sophistication and competition of chip packaging technology, not only the volume of the package is getting smaller and the function of the chip is becoming more and more diverse, but also the related process of chip packaging is becoming more and more complicated, and the corresponding manpower demand is also rising. The processing process of vehicles, vehicles, etc. often requires a lot of manpower.

半導體封裝結構常需在基板施作金屬層，用以形成電路層、遮蔽層、天線等圖案，其中常見形成金屬層之方式有電鍍、Plating、電漿輔助化學氣相沉積、濺鍍等。以電鍍為例，若欲於玻璃基板上進行電鍍，需先在該玻璃基板上形成一層種子層，再以光阻定義所欲形成之圖案。當電鍍完成後，需藉由清潔裝置(如二流體機台)將殘留之光阻進行移除，其過程可使用二流體於基板上往復沖刷，基板下方的載台會同步旋轉，藉此完成清潔。如何進行有效及快速之清洗為本領域所欲解決之問題。 Semiconductor packaging structures often require a metal layer on the substrate to form patterns such as circuit layers, shielding layers, and antennas. Common methods for forming metal layers include electroplating, plating, plasma-assisted chemical vapor deposition, and sputtering. Taking electroplating as an example, if electroplating is to be performed on a glass substrate, a seed layer needs to be formed on the glass substrate first, and then a photoresist is used to define the pattern to be formed. After the electroplating is completed, the residual photoresist needs to be removed by a cleaning device (such as a two-fluid machine). The process can use two-fluid to reciprocate on the substrate, and the stage below the substrate will rotate synchronously, thus completing the process. clean. How to perform effective and fast cleaning is a problem to be solved in the art.

本揭露之一實施例係關於一種清潔裝置。該清潔裝置包含一清潔構件及一擋板。該清潔構件經組態以朝向一待清潔物體噴射第一流體及第二流體。該擋板環繞該清潔構件。該擋板具有一開口。該清潔構件穿過該開口。該待清潔物體經該清潔裝置清洗後之殘留粒子密度小於等於12粒子/平方公釐。 An embodiment of the present disclosure relates to a cleaning device. The cleaning device contains a cleaning member and a baffle. The cleaning member is configured to spray the first fluid and the second fluid toward an object to be cleaned. The baffle surrounds the cleaning member. The baffle has an opening. The cleaning member passes through the opening. The residual particle density of the object to be cleaned after being cleaned by the cleaning device is less than or equal to 12 particles/square millimeter.

本揭露之另一實施例係關於一種用於一清潔裝置之擋板。該擋板包含一底座及一固定構件。該底座環繞該清潔裝置之一清潔構件。該底座包含分離之一第一部份及一第二部份。該第一部份及該第二部分經連接以定義一開口，俾以讓該清潔構件穿過該開口並朝向一待清潔物體噴射一第一流體及一第二流體。該固定構件置於該底座之一表面上，並凸出該底座之該表面。該固定構件經組態以連接該底座及該清潔構件。 Another embodiment of the present disclosure relates to a baffle for a cleaning device. The baffle includes a base and a fixing member. The base surrounds a cleaning member of the cleaning device. The base includes a separated first part and a second part. The first portion and the second portion are connected to define an opening for the cleaning member to pass through the opening and spray a first fluid and a second fluid toward an object to be cleaned. The fixing member is placed on a surface of the base and protrudes from the surface of the base. The securing member is configured to connect the base and the cleaning member.

1:清潔裝置 1: Cleaning device

10:腔室 10: Chamber

11:載台 11: Carrier

12:清潔構件 12: Clean the components

13:排出組件 13: Discharge components

2:清潔裝置 2: Cleaning device

22:擋板 22: Baffle

22b:底座 22b: Base

22h:開口 22h: Opening

22o:孔洞 22o: hole

22p:固定構件 22p: Fixed components

23:供液組件 23: Liquid supply components

24:供液組件 24: Liquid supply components

圖1是根據本揭露之部分實施例的一種用於半導體元件之清潔裝置之側視圖。 FIG. 1 is a side view of a cleaning apparatus for semiconductor devices according to some embodiments of the present disclosure.

圖2是根據本揭露之部分實施例的一種用於半導體元件之清潔裝置之側視圖。 2 is a side view of a cleaning apparatus for semiconductor devices according to some embodiments of the present disclosure.

圖3是根據本揭露之部分實施例的一種用於半導體元件之清潔裝置之示意圖。 3 is a schematic diagram of a cleaning apparatus for semiconductor devices according to some embodiments of the present disclosure.

圖4是根據本揭露之部分實施例的一種擋板之示意圖。 4 is a schematic diagram of a baffle according to some embodiments of the present disclosure.

圖5是根據本揭露之部分實施例的一種擋板之上視圖。 5 is a top view of a baffle according to some embodiments of the present disclosure.

圖6是根據本揭露之部分實施例的一種擋板之側視圖。 6 is a side view of a baffle according to some embodiments of the present disclosure.

圖1是根據本揭露之部分實施例的一種用於半導體元件之清潔裝置1之側視圖。該清潔裝置1包含一腔室10、一載台11、一清潔構件12、一排出組件13。 FIG. 1 is a side view of a cleaning apparatus 1 for semiconductor devices according to some embodiments of the present disclosure. The cleaning device 1 includes a chamber 10, a stage 11, a cleaning mechanism component 12 , and a discharge component 13 .

在本發明之部分實施例中，該腔室10可用以容納該載台11及該清潔構件12。該腔室10可提供一密閉空間，以在清潔過程中防止清潔劑或其他粒子外漏。 In some embodiments of the present invention, the chamber 10 can be used to accommodate the stage 11 and the cleaning member 12 . The chamber 10 can provide a closed space to prevent leakage of cleaning agents or other particles during the cleaning process.

該載台11可用於承載一待處理物體或待清潔物體。根據本發明之部分實施例，待處理物體或待清潔物體可為半導體元件(如晶片、晶條、晶圓等)。在本發明之部分實施例中，該載台11可為方形、橢圓形或其他任何適用於承載待處理之物體之任何形狀。根據本發明之部分實施例，該載台11可連接至一旋轉構件，使其可以順時鐘或逆時鐘之方向旋轉，並帶動所承載之物體旋轉。根據本揭露之部分實施例，該載台之轉速約為100rpm至1000rpm。 The carrier 11 can be used to carry an object to be processed or an object to be cleaned. According to some embodiments of the present invention, the object to be processed or the object to be cleaned may be a semiconductor element (eg, a chip, a wafer, a wafer, etc.). In some embodiments of the present invention, the stage 11 may be square, oval, or any other shape suitable for carrying the object to be processed. According to some embodiments of the present invention, the carrier 11 can be connected to a rotating member, so that it can rotate in a clockwise or counterclockwise direction, and rotate the carried object. According to some embodiments of the present disclosure, the rotational speed of the stage is about 100 rpm to 1000 rpm.

在本發明之部分實施例中，該清潔構件12可與一或多個供液組件(如圖3之供液組件23及24，其分別供應液體及氣體)連接，以自該供液組件接收流體，並經組態以將流體噴向呈載於該載台11之待清潔物體上，進行清潔。根據本發明之部分實施例，該流體可為二流體。例如：該流體可包含氣體(空氣、氮氣、壓縮乾燥空氣(CDA)等)及液體(去離子水(DIW)、異丙醇或任何適合之清潔液)或其混合物。根據本發明之部分實施例，該清潔構件12經組態以使用高速流動之氣體將液體微粒化，並將霧化水滴噴灑至待清潔物體上。該等霧化水滴可進入具不平整表面之待清潔物體，進而移除待清潔物體上之殘留物(如微塵、顆粒、化學物品、光阻等)，而不會損壞待清潔物體。根據本揭露之部分實施例，該清潔構件12所噴射之CDA流量約為500升/分鐘(L/min)。根據本揭露之部分實施例，該清潔構件12所噴射之DIW流量約為4.5L/min。根據本揭露之部分實施例，該清潔構件12所噴射之氮氣流量約為200L/min。根據本發明之部分實施例，該清潔構件12可由不銹鋼或其他合適材料所組成。 In some embodiments of the present invention, the cleaning member 12 may be connected to one or more liquid supply assemblies (such as liquid supply assemblies 23 and 24 of FIG. 3, which supply liquid and gas, respectively) for receiving therefrom. The fluid is configured to spray the fluid onto the object to be cleaned that is carried on the stage 11 for cleaning. According to some embodiments of the present invention, the fluid may be a two-fluid. For example, the fluid may comprise gas (air, nitrogen, compressed dry air (CDA), etc.) and liquid (deionized water (DIW), isopropanol, or any suitable cleaning fluid) or mixtures thereof. According to some embodiments of the present invention, the cleaning member 12 is configured to micronize the liquid using a high velocity flow of gas and spray the atomized water droplets onto the object to be cleaned. The atomized water droplets can enter the object to be cleaned with uneven surface, thereby removing residues (such as fine dust, particles, chemicals, photoresist, etc.) on the object to be cleaned without damaging the object to be cleaned. According to some embodiments of the present disclosure, the CDA flow rate sprayed by the cleaning member 12 is about 500 liters per minute (L/min). According to some embodiments of the present disclosure, the DIW flow rate sprayed by the cleaning member 12 is about 4.5 L/min. According to this According to some disclosed embodiments, the flow rate of nitrogen gas injected by the cleaning member 12 is about 200 L/min. According to some embodiments of the present invention, the cleaning member 12 may be composed of stainless steel or other suitable materials.

該排出組件13係連接至該腔室10，以將自待清潔物體上所清洗出之殘留物及流體排出。根據本發明之部分實施例，該排出組件13可將液體及氣體分離，分別以不同之通道將液體及氣體排出。 The drain assembly 13 is connected to the chamber 10 for draining the residues and fluids cleaned from the object to be cleaned. According to some embodiments of the present invention, the discharge component 13 can separate the liquid and the gas, and discharge the liquid and the gas through different channels respectively.

根據本發明之部分實施例，該腔室10之長L11及寬約為70公分、高H11約為50公分。根據本發明之部分實施例，該載台11之高度(即載台11下表面至腔室10下表面之距離)H12約為10公分。根據本發明之部分實施例，該載台11之邊緣與腔室10之側壁之距離D11約為20公分。根據本發明之部分實施例，該載台11之上表面與腔室10之上表面之距離D12約為34公分。本發明所屬領域具有通常知識者當可瞭解上述之尺寸僅為用以說明本發明之部分實施例，並非用以作為本發明之限制。 According to some embodiments of the present invention, the length L11 and width of the chamber 10 are about 70 cm, and the height H11 is about 50 cm. According to some embodiments of the present invention, the height H12 of the stage 11 (ie, the distance from the lower surface of the stage 11 to the lower surface of the chamber 10 ) is about 10 cm. According to some embodiments of the present invention, the distance D11 between the edge of the stage 11 and the side wall of the chamber 10 is about 20 cm. According to some embodiments of the present invention, the distance D12 between the upper surface of the stage 11 and the upper surface of the chamber 10 is about 34 cm. Those skilled in the art to which the present invention pertains should understand that the above dimensions are only used to illustrate some embodiments of the present invention, and are not intended to be used as limitations of the present invention.

於清潔過程中，待清潔之物體係放置於該載台11上。該載台11可以順時鐘或逆時鐘之方向旋轉。同時，該清潔構件12則以左右及/或前後之方向往復移動，將流體噴灑於待清潔物體上，進而帶走待清潔之物體上之殘留物。根據本揭露之部分實施例，清潔過程可包含以下過程：(i)載台11以約500rpm之轉速進行旋轉，清潔構件12朝向載台上之待清潔物體噴出流量約500L/min之CDA及流量約4.5L/min之DIW，持續約224秒；(ii)載台11以約100rpm之轉速進行旋轉，清潔構件12朝向載台上之待清潔物體噴出流量約500L/min之CDA及流量約4.5L/min之DIW，持續約50秒；(iii)載台11以約1000rpm之轉速進行旋轉，使待清潔物體上之殘留物或流體脫離待清潔物體，並可藉由排出組件13將殘留物或流體排出；及 (iv)載台11以約1000rpm之轉速進行旋轉，清潔構件12朝向載台上之待清潔物體噴出流量約200L/min之氮氣。本發明所屬領域具有通常知識者當可瞭解上述清潔裝置1之設定及條件僅為部分實施例，可視需求而改變，並非作為本發明之限制。 During the cleaning process, the object system to be cleaned is placed on the stage 11 . The stage 11 can be rotated clockwise or counterclockwise. At the same time, the cleaning member 12 reciprocates in the left-right and/or front-rear directions, sprays the fluid on the object to be cleaned, and then takes away the residues on the object to be cleaned. According to some embodiments of the present disclosure, the cleaning process may include the following processes: (i) the stage 11 is rotated at a speed of about 500 rpm, and the cleaning member 12 sprays CDA and a flow rate of about 500 L/min toward the object to be cleaned on the stage The DIW of about 4.5L/min lasted for about 224 seconds; (ii) the stage 11 was rotated at a speed of about 100rpm, and the cleaning member 12 sprayed CDA with a flow rate of about 500L/min and a flow rate of about 4.5 to the object to be cleaned on the stage The DIW of L/min lasts for about 50 seconds; (iii) the stage 11 rotates at a speed of about 1000 rpm, so that the residue or fluid on the object to be cleaned is separated from the object to be cleaned, and the residue can be removed by the discharge element 13 or fluid discharge; and (iv) The stage 11 is rotated at a rotational speed of about 1000 rpm, and the cleaning member 12 sprays nitrogen gas at a flow rate of about 200 L/min toward the object to be cleaned on the stage. Those skilled in the art to which the present invention pertains should understand that the settings and conditions of the cleaning device 1 described above are only partial examples, which may be changed as required, and are not intended to be limitations of the present invention.

然而，如上所述，由於該清潔構件12所噴灑之流體為高速流體，其噴射至待清潔物體之表面上容易反射噴濺至腔室10之側壁上，並將待清潔物體之殘留物亦隨之帶至腔室10之側壁上。該殘留物會凝結於腔室10之側壁上，並脫落掉至待清潔物體上，對待清潔物體造成污染。根據本揭露之部分實施例，若待清潔物體上之殘留物為液膜(Liquid Film)時，則該待清潔物體經清潔後平均殘留於該待清潔物體上之殘留物粒子密度約為39.16粒子/平方公釐。若待清潔物體上之殘留物為乾膜(Dry Film)時，則該待清潔物體經清潔後平均殘留於該待清潔物體上之殘留物粒子密度甚至高達307.33粒子/平方公釐。如此將降低清潔裝置1之效率並增加所需之清潔時間。 However, as mentioned above, since the fluid sprayed by the cleaning member 12 is a high-speed fluid, it is easy to reflect and splash on the side wall of the chamber 10 when it sprays on the surface of the object to be cleaned, and the residues of the object to be cleaned also follow brought to the side wall of the chamber 10 . The residue will condense on the side wall of the chamber 10 and fall off to the object to be cleaned, causing pollution to the object to be cleaned. According to some embodiments of the present disclosure, if the residue on the object to be cleaned is a liquid film, the average particle density of the residue remaining on the object to be cleaned after cleaning is about 39.16 particles / mm². If the residue on the object to be cleaned is a dry film, the average particle density of the residue remaining on the object to be cleaned after cleaning is even as high as 307.33 particles/mm2. This will reduce the efficiency of the cleaning device 1 and increase the required cleaning time.

圖2是根據本揭露之部分實施例的一種用於半導體元件之清潔裝置2之側視圖。圖3是根據本揭露之部分實施例的一種用於半導體元件之清潔裝置2之示意圖。清潔裝置2與圖1所示之清潔裝置1相似，其主要相異之處在於清潔裝置2另包含一擋板22。如圖3所示，該擋板22環繞該清潔構件12之周圍，以防止噴射至待清潔物體之表面上之流體及所帶出之殘留物反射噴濺至腔室10之側壁上。根據本發明之部分實施例，該擋板22可由不銹鋼或其他合適材料所組成。 FIG. 2 is a side view of a cleaning apparatus 2 for semiconductor devices according to some embodiments of the present disclosure. FIG. 3 is a schematic diagram of a cleaning apparatus 2 for semiconductor devices according to some embodiments of the present disclosure. The cleaning device 2 is similar to the cleaning device 1 shown in FIG. 1 , and the main difference is that the cleaning device 2 further includes a baffle 22 . As shown in FIG. 3 , the baffle 22 surrounds the cleaning member 12 to prevent the fluid sprayed on the surface of the object to be cleaned and the residues carried out from being reflected and sprayed on the side wall of the chamber 10 . According to some embodiments of the present invention, the baffle 22 may be composed of stainless steel or other suitable materials.

如圖4、圖5及圖6所示(其分別揭露根據本揭露之部分實施例之該擋板22之示意圖、上視圖及側視圖)，該擋板22具有一底座 22b、一固定構件22p及一開口22h。該開口22之尺寸大於等於該清潔構件12之外圍尺寸，以供該清潔構件12穿過該開口22h。根據本發明之部分實施例，該開口22h之長度D54約為70公釐、寬度D53約為65公釐。本發明所屬領域具有通常知識者當可瞭解上述之尺寸僅為用以說明本發明之部分實施例，並非用以作為本發明之限制。該開口22h之形狀及大小可根據清潔構件12之形狀及大小做相對應之變化。 As shown in FIGS. 4 , 5 and 6 (which respectively disclose a schematic view, a top view and a side view of the baffle 22 according to some embodiments of the present disclosure), the baffle 22 has a base 22b, a fixing member 22p and an opening 22h. The size of the opening 22 is greater than or equal to the peripheral size of the cleaning member 12 for the cleaning member 12 to pass through the opening 22h. According to some embodiments of the present invention, the length D54 of the opening 22h is about 70 mm, and the width D53 is about 65 mm. Those skilled in the art to which the present invention pertains should understand that the above dimensions are only used to illustrate some embodiments of the present invention, and are not intended to be used as limitations of the present invention. The shape and size of the opening 22h can be changed correspondingly according to the shape and size of the cleaning member 12 .

該底座22b環繞該清潔構件12，用以阻擋自待清潔物體反射之流體及所帶出之殘留物。根據本發明之部分實施例，該底座22b之長度D52約為140公釐、寬度D51約為130公釐、厚度D61約為5公釐。本發明所屬領域具有通常知識者當可瞭解上述之尺寸僅為用以說明本發明之部分實施例，並非用以作為本發明之限制。該底座22b之形狀及大小可根據本發明所屬領域具有通常知識者根據不同目的及應用而變化。根據本揭露之部分實施例，該底座22b可為一體成型。根據本揭露之部分實施例，該底座22b可包含兩個或兩個以上之部件，互相接合。例如，如圖5所示，該底座22b具有一「ㄇ」型部件(底座22b之上半部)及一條狀部件(底座22b之下半部)，兩部件為互相分離之部件，其互相接合以定義該開口22h。 The base 22b surrounds the cleaning member 12 for blocking the fluid reflected from the object to be cleaned and the residue carried out. According to some embodiments of the present invention, the length D52 of the base 22b is about 140 mm, the width D51 is about 130 mm, and the thickness D61 is about 5 mm. Those skilled in the art to which the present invention pertains should understand that the above dimensions are only used to illustrate some embodiments of the present invention, and are not intended to be used as limitations of the present invention. The shape and size of the base 22b can be varied for different purposes and applications according to those skilled in the art to which the present invention pertains. According to some embodiments of the present disclosure, the base 22b may be integrally formed. According to some embodiments of the present disclosure, the base 22b may include two or more components, which are joined to each other. For example, as shown in FIG. 5, the base 22b has a "ㄇ"-shaped part (the upper half of the base 22b) and a strip-shaped part (the lower half of the base 22b), and the two parts are separate parts that are joined to each other to define the opening 22h.

該固定構件22p放置於該底座22b上，並凸出於該底座22b。該固定構件22p可提供該底座22b與該清潔構件12之間之連接。例如，該固定構件22p及該底座22b具有多個孔洞22o，其可透過連接元件(如螺絲)與底座22b及該清潔構件12接合。根據本揭露之部分實施例，該固定構件22p可為L型固片。根據本發明之部分實施例，該固定構件22p之高度D62約為30公釐、直徑D63約為2公釐。本發明所屬領域具有通常知識者當可瞭解上述之尺寸僅為用以說明本發明之部分實施例，並非用以作為本發明之限制。該固定構件22p之形狀及大小可根據本發明所屬領域具有通常知識者根據不同目的及應用而變化。 The fixing member 22p is placed on the base 22b and protrudes from the base 22b. The fixing member 22p can provide the connection between the base 22b and the cleaning member 12 . For example, the fixing member 22p and the base 22b have a plurality of holes 22o, which can be engaged with the base 22b and the cleaning member 12 through connecting elements (eg, screws). According to some embodiments of the present disclosure, the fixing member 22p may be an L-shaped solid piece. According to some embodiments of the present invention, the height D62 of the fixing member 22p is about 30 mm, and the diameter D63 is about 2 mm. The field to which the present invention pertains is generally Those skilled in the art should understand that the above dimensions are only used to illustrate some embodiments of the present invention, and are not intended to be used as limitations of the present invention. The shape and size of the fixing member 22p can be varied according to different purposes and applications according to those skilled in the art to which the present invention pertains.

根據本揭露之部分實施例，該擋板22係經配置以與該載台11接近。例如，該擋板22與該載台11之距離d21(如該擋板之底座22b之下表面與該載台11之上表面之距離)約為2公分。因此，於清潔操作時，該擋板可阻擋經由待清潔物體之反射之流體及所帶出之殘留物，進而避免該流體及殘留物附著於腔室10之側壁上並脫落掉至待清潔物體上，對待清潔物體造成污染。根據本揭露之部分實施例，若待清潔物體上之殘留物為液膜時，則該待清潔物體經清潔後平均殘留於該待清潔物體上之殘留物粒子密度小於等於約30粒子/平方公釐，小於等於約20粒子/平方公釐，小於等於約12粒子/平方公釐或小於等於約11.83粒子/平方公釐。若待清潔物體上之殘留物為乾膜時，則該待清潔物體經清潔後平均殘留於該待清潔物體上之殘留物粒子密度小於等於約30粒子/平方公釐，小於等於約20粒子/平方公釐，小於等於約12粒子/平方公釐或小於等於約11.63粒子/平方公釐。如此將大幅提升清潔裝置1之效率並降低所需之清潔時間。 According to some embodiments of the present disclosure, the baffle 22 is configured to be proximate to the stage 11 . For example, the distance d21 between the baffle 22 and the stage 11 (eg, the distance between the lower surface of the base 22b of the baffle and the upper surface of the stage 11 ) is about 2 cm. Therefore, during the cleaning operation, the baffle can block the fluid reflected by the object to be cleaned and the residue carried out, thereby preventing the fluid and residue from adhering to the side wall of the chamber 10 and falling off to the object to be cleaned On, treat clean objects causing contamination. According to some embodiments of the present disclosure, if the residue on the object to be cleaned is a liquid film, the average particle density of the residue remaining on the object to be cleaned after cleaning is less than or equal to about 30 particles/square square centimeters, less than or equal to about 20 particles/mm2, less than or equal to about 12 particles/mm2 or less than or equal to about 11.83 particles/mm2. If the residue on the object to be cleaned is a dry film, the average particle density of the residue left on the object to be cleaned after cleaning is less than or equal to about 30 particles/mm2 and less than or equal to about 20 particles/mm Square mm, less than or equal to about 12 particles/mm2 or less than or equal to about 11.63 particles/mm2. This will greatly improve the efficiency of the cleaning device 1 and reduce the required cleaning time.

此外，根據本揭露之部分實施例，當清潔構件12移動至端點時，該擋板22與腔室10之側壁之距離D23大於等於2公分且該擋板22與該載台11之距離D22約為4公分，以防止該擋板22與該腔室10之側壁碰撞。 In addition, according to some embodiments of the present disclosure, when the cleaning member 12 moves to the end point, the distance D23 between the baffle 22 and the side wall of the chamber 10 is greater than or equal to 2 cm, and the distance D22 between the baffle 22 and the stage 11 is greater than or equal to 2 cm. About 4 cm to prevent the baffle 22 from colliding with the side wall of the chamber 10 .

雖然本發明之技術內容與特徵係如上所述，然於本發明之技術領域具有通常知識者仍可在不悖離本發明之教導與揭露下進行許多變化與修改。因此，本發明之範疇並非限定於已揭露之實施例而係包含不悖離本發明之其他變化與修改，其係如下列申請專利範圍所涵蓋之範疇。 Although the technical content and features of the present invention are described above, those skilled in the art of the present invention can still make many changes and modifications without departing from the teachings and disclosures of the present invention. Therefore, the scope of the present invention is not limited to the disclosed embodiments but also includes Other changes and modifications from the present invention are within the scope of the following claims.

1:清潔裝置 1: Cleaning device

10:腔室 10: Chamber

11:載台 11: Carrier

12:清潔構件 12: Clean the components

13:排出組件 13: Discharge components

22:擋板 22: Baffle

Claims

一種清潔裝置，其包含：一清潔構件，其經組態以朝向一待清潔物體噴射第一流體及第二流體；及一擋板，其環繞該清潔構件，該擋板具有一開口，該清潔構件穿過該開口，其中該擋板進一步包含：一底座，其具有該開口以讓該清潔構件穿過；及一固定構件，其置於該底座之一表面上，並凸出該底座之該表面，該固定構件經組態以連接該底座及該清潔構件，其中該待清潔物體經該清潔裝置清洗後之殘留粒子密度小於等於12粒子/平方公釐。 A cleaning device comprising: a cleaning member configured to spray a first fluid and a second fluid toward an object to be cleaned; and a baffle surrounding the cleaning member, the baffle having an opening, the cleaning The member passes through the opening, wherein the baffle further comprises: a base having the opening to allow the cleaning member to pass through; and a fixing member placed on a surface of the base and protruding from the base of the base On the surface, the fixing member is configured to connect the base and the cleaning member, wherein the residual particle density of the object to be cleaned after being cleaned by the cleaning device is less than or equal to 12 particles/mm2.

如請求項1之清潔裝置，進一步包含：一載台，用以承載該待清潔物體，並經組態以順時鐘或逆時鐘之方向旋轉；及一腔室，其用以容納該清潔構件、該擋板及該載台。 The cleaning device of claim 1, further comprising: a stage for carrying the object to be cleaned and configured to rotate in a clockwise or counterclockwise direction; and a chamber for accommodating the cleaning member, the baffle and the stage.

如請求項1之清潔裝置，其中該第一流體為氣體且該第二流體為液體。 The cleaning device of claim 1, wherein the first fluid is a gas and the second fluid is a liquid.

如請求項3之清潔裝置，其中該第一流體包含空氣、氮氣或壓縮乾燥空氣，且該第二流體包含去離子水或異丙醇。 The cleaning device of claim 3, wherein the first fluid comprises air, nitrogen or compressed dry air, and the second fluid comprises deionized water or isopropanol.

如請求項1之清潔裝置，其中該擋板之底部表面與該載台之上表面之距離約為2公分。 The cleaning device of claim 1, wherein the distance between the bottom surface of the baffle and the upper surface of the stage is about 2 cm.

如請求項1之清潔裝置，其中該清潔構件可沿平行於該待清潔物體之一表面之一方向移動。 The cleaning device of claim 1, wherein the cleaning member is movable in a direction parallel to a surface of the object to be cleaned.

如請求項6之清潔裝置，其中該擋板可隨該清潔構件沿平行於該待清潔物體之該表面之該方向移動。 The cleaning device of claim 6, wherein the baffle is movable with the cleaning member in the direction parallel to the surface of the object to be cleaned.

一種用於一清潔裝置之擋板，該擋板包含：一底座，其環繞該清潔裝置之一清潔構件，該底座包含分離之一第一部份及一第二部份，該第一部份及該第二部分經連接以定義一開口，俾以讓該清潔構件穿過該開口並可移動地朝向一待清潔物體噴射一第一流體及一第二流體；及一固定構件，其置於該底座之一表面上，並凸出該底座之該表面，該固定構件經組態以連接該底座及該清潔構件。 A baffle plate for a cleaning device, the baffle plate comprising: a base surrounding a cleaning member of the cleaning device, the base including a separate first part and a second part, the first part and the second portion is connected to define an opening for allowing the cleaning member to pass through the opening and movably spray a first fluid and a second fluid toward an object to be cleaned; and a fixing member placed in On a surface of the base and protruding from the surface of the base, the fixing member is configured to connect the base and the cleaning member.

如請求項8之擋板，其中該待清潔物體經該清潔裝置清洗後之殘留粒子密度小於等於12粒子/平方公釐。 The baffle plate of claim 8, wherein the residual particle density of the object to be cleaned after being cleaned by the cleaning device is less than or equal to 12 particles/mm2.

如請求項8之擋板，其中該第一流體為氣體且該第二流體為液體。 The baffle of claim 8, wherein the first fluid is a gas and the second fluid is a liquid.

如請求項10之擋板，其中該第一流體包含空氣、氮氣或壓縮乾燥空氣，且該第二流體包含去離子水或異丙醇。 The baffle of claim 10, wherein the first fluid comprises air, nitrogen, or compressed dry air, and the second fluid comprises deionized water or isopropanol.