TWI772341B - 發光二極體晶片的製造方法及發光二極體晶片 - Google Patents

發光二極體晶片的製造方法及發光二極體晶片 Download PDF

Info

Publication number: TWI772341B
Authority: TW; Taiwan
Prior art keywords: wafer; transparent substrate; transparent; light; emitting diode
Prior art date: 2017-01-16

Application number

TW106142350A

Other languages

English (en)

Chinese (zh)

Other versions

TW201828499A (zh

Inventor

岡村卓

Original Assignee

日商迪思科股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-01-16

Filing date

2017-12-04

Publication date

2022-08-01

2017-12-04 Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司

2018-08-01 Publication of TW201828499A publication Critical patent/TW201828499A/zh

2022-08-01 Application granted granted Critical

2022-08-01 Publication of TWI772341B publication Critical patent/TWI772341B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 11
235000012431 wafers Nutrition 0.000 claims abstract description 140
239000000758 substrate Substances 0.000 claims abstract description 93
238000000034 method Methods 0.000 claims abstract description 46
239000013078 crystal Substances 0.000 claims abstract description 12
239000004065 semiconductor Substances 0.000 claims abstract description 8
238000002360 preparation method Methods 0.000 claims abstract description 4
239000010980 sapphire Substances 0.000 claims description 11
229910052594 sapphire Inorganic materials 0.000 claims description 11
239000005304 optical glass Substances 0.000 claims description 4
239000011347 resin Substances 0.000 claims description 4
229920005989 resin Polymers 0.000 claims description 4
239000000919 ceramic Substances 0.000 claims description 3
239000000853 adhesive Substances 0.000 claims description 2
230000010354 integration Effects 0.000 claims description 2
238000005520 cutting process Methods 0.000 description 36
230000003287 optical effect Effects 0.000 description 8
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
238000001816 cooling Methods 0.000 description 3
238000009713 electroplating Methods 0.000 description 3
229910002601 GaN Inorganic materials 0.000 description 2
238000002679 ablation Methods 0.000 description 2
239000006061 abrasive grain Substances 0.000 description 2
229910003460 diamond Inorganic materials 0.000 description 2
239000010432 diamond Substances 0.000 description 2
230000001678 irradiating effect Effects 0.000 description 2
239000000463 material Substances 0.000 description 2
229910052759 nickel Inorganic materials 0.000 description 2
238000005488 sandblasting Methods 0.000 description 2
239000004575 stone Substances 0.000 description 2
239000004925 Acrylic resin Substances 0.000 description 1
229920000178 Acrylic resin Polymers 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
239000000969 carrier Substances 0.000 description 1
239000002173 cutting fluid Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
238000010030 laminating Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
229920005668 polycarbonate resin Polymers 0.000 description 1
239000004431 polycarbonate resin Substances 0.000 description 1
238000000926 separation method Methods 0.000 description 1
239000012780 transparent material Substances 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Led Devices (AREA)
Dicing (AREA)
Led Device Packages (AREA)

TW106142350A 2017-01-16 2017-12-04 發光二極體晶片的製造方法及發光二極體晶片 TWI772341B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2017-005160		2017-01-16
JP2017005160A JP2018116964A (ja)	2017-01-16	2017-01-16	発光ダイオードチップの製造方法及び発光ダイオードチップ

Publications (2)

Publication Number	Publication Date
TW201828499A TW201828499A (zh)	2018-08-01
TWI772341B true TWI772341B (zh)	2022-08-01

Family

ID=62892605

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW106142350A TWI772341B (zh)	2017-01-16	2017-12-04	發光二極體晶片的製造方法及發光二極體晶片

Country Status (4)

Country	Link
JP (1)	JP2018116964A (ja)
KR (1)	KR102296118B1 (ja)
CN (1)	CN108321286A (ja)
TW (1)	TWI772341B (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2011009305A (ja) *	2009-06-23	2011-01-13	Koito Mfg Co Ltd	発光モジュール
JP2012044132A (ja) *	2010-08-20	2012-03-01	Invenlux Corp	光学密度の高い材料によるコーティング基板を有する発光器具
JP2014175362A (ja) *	2013-03-06	2014-09-22	Toshiba Corp	半導体発光素子及びその製造方法
JP2014239123A (ja) *	2013-06-06	2014-12-18	株式会社ディスコ	加工方法
JP2016521463A (ja) *	2013-05-15	2016-07-21	コーニンクレッカフィリップスエヌヴェＫｏｎｉｎｋｌｉｊｋｅＰｈｉｌｉｐｓＮ．Ｖ．	基板内に散乱機構を有するｌｅｄ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4122739B2 (ja) *	2001-07-26	2008-07-23	松下電工株式会社	発光素子及びその製造方法
JP5198142B2 (ja) *	2008-05-14	2013-05-15	シャープ株式会社	電子素子モジュールの製造方法
DE102011114641B4 (de) *	2011-09-30	2021-08-12	OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung	Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
CN104160520A (zh) *	2012-02-01	2014-11-19	松下电器产业株式会社	半导体发光元件、其制造方法和光源装置
JP2014175354A (ja)	2013-03-06	2014-09-22	Disco Abrasive Syst Ltd	発光ダイオード
JP6255235B2 (ja) *	2013-12-20	2017-12-27	株式会社ディスコ	発光チップ
US20150353417A1 (en) *	2013-12-26	2015-12-10	Shin-Etsu Quartz Products Co., Ltd.	Quartz glass member for wavelength conversion and method of manufacturing the same
JP6255255B2 (ja) *	2014-01-27	2017-12-27	株式会社ディスコ	光デバイスの加工方法
JP2015192100A (ja) *	2014-03-28	2015-11-02	豊田合成株式会社	発光素子および発光素子の製造方法

2017
- 2017-01-16 JP JP2017005160A patent/JP2018116964A/ja active Pending
- 2017-12-04 TW TW106142350A patent/TWI772341B/zh active
- 2017-12-27 CN CN201711444263.1A patent/CN108321286A/zh active Pending
2018
- 2018-01-09 KR KR1020180002707A patent/KR102296118B1/ko active IP Right Grant

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2011009305A (ja) *	2009-06-23	2011-01-13	Koito Mfg Co Ltd	発光モジュール
JP2012044132A (ja) *	2010-08-20	2012-03-01	Invenlux Corp	光学密度の高い材料によるコーティング基板を有する発光器具
JP2014175362A (ja) *	2013-03-06	2014-09-22	Toshiba Corp	半導体発光素子及びその製造方法
JP2016521463A (ja) *	2013-05-15	2016-07-21	コーニンクレッカフィリップスエヌヴェＫｏｎｉｎｋｌｉｊｋｅＰｈｉｌｉｐｓＮ．Ｖ．	基板内に散乱機構を有するｌｅｄ
JP2014239123A (ja) *	2013-06-06	2014-12-18	株式会社ディスコ	加工方法

Also Published As

Publication number	Publication date
KR102296118B1 (ko)	2021-08-30
TW201828499A (zh)	2018-08-01
JP2018116964A (ja)	2018-07-26
CN108321286A (zh)	2018-07-24
KR20180084639A (ko)	2018-07-25

Publication	Publication Date	Title
KR20180038379A (ko)	2018-04-16	발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
TWI772341B (zh)	2022-08-01	發光二極體晶片的製造方法及發光二極體晶片
KR20180020095A (ko)	2018-02-27	발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102311576B1 (ko)	2021-10-08	발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102314054B1 (ko)	2021-10-15	발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102311574B1 (ko)	2021-10-08	발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
JP2018181998A (ja)	2018-11-15	発光ダイオードチップの製造方法及び発光ダイオードチップ
JP6786166B2 (ja)	2020-11-18	発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018148094A (ja)	2018-09-20	発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018181875A (ja)	2018-11-15	発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018116968A (ja)	2018-07-26	発光ダイオードチップの製造方法及び発光ダイオードチップ
KR102270094B1 (ko)	2021-06-25	발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102327105B1 (ko)	2021-11-15	발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
JP6752524B2 (ja)	2020-09-09	発光ダイオードチップの製造方法及び発光ダイオードチップ
JP6775889B2 (ja)	2020-10-28	発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018186165A (ja)	2018-11-22	発光ダイオードチップの製造方法及び発光ダイオードチップ
KR20170141600A (ko)	2017-12-26	발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
JP2018148093A (ja)	2018-09-20	発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018186169A (ja)	2018-11-22	発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018182000A (ja)	2018-11-15	発光ダイオードチップの製造方法及び発光ダイオードチップ
KR20180029858A (ko)	2018-03-21	발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR20170141601A (ko)	2017-12-26	발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
JP2018148095A (ja)	2018-09-20	発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018181876A (ja)	2018-11-15	発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018129371A (ja)	2018-08-16	発光ダイオードチップの製造方法及び発光ダイオードチップ