TWI763298B - Manufacturing method of crystal oscillator and structure thereof - Google Patents
Manufacturing method of crystal oscillator and structure thereof Download PDFInfo
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本發明是有關於一種振盪器的製作方法與結構,特別是指一種高頻率的壓電振盪器的製作方法與結構。The present invention relates to a manufacturing method and structure of an oscillator, in particular to a manufacturing method and structure of a high-frequency piezoelectric oscillator.
石英振盪器為一種常見的壓電振盪器,是利用石英晶體本身的壓電效應來產生高振盪頻率的元件,經常配置於各種電子產品中,例如:通訊設備或是可攜式電子產品。傳統的石英振盪器大致包括一石英基板,及分別形成於該石英基板相對二表面的一頂電極及一底電極,且該底電極會自該石英基板的底面,延著側周面延伸至與該石英基板的頂面,令該頂電極及該底電極可位於同一表面,用以供對外電連接。A quartz oscillator is a common piezoelectric oscillator, which uses the piezoelectric effect of the quartz crystal itself to generate a high oscillation frequency. It is often configured in various electronic products, such as communication equipment or portable electronic products. A traditional quartz oscillator generally includes a quartz substrate, and a top electrode and a bottom electrode respectively formed on two opposite surfaces of the quartz substrate, and the bottom electrode extends from the bottom surface of the quartz substrate along the side peripheral surface to the opposite side. The top surface of the quartz substrate allows the top electrode and the bottom electrode to be located on the same surface for external electrical connection.
一般而言,石英基板的厚度越薄,能產生的振盪頻率就越高,因此,為了讓石英振盪器可應用在高頻元件,就須要薄化該石英基板,使其厚度可達到所需的高頻振盪頻率。參閱圖1,目前常見的高頻石英振盪器1的作法通常是利用將一石英基板11的中間區域111減薄以提升其振盪頻率,並讓該石英基板11的週緣維持一定的厚度使其形成一以提供足夠機械支撐力的支撐框架112。Generally speaking, the thinner the thickness of the quartz substrate, the higher the oscillation frequency that can be generated. Therefore, in order for the quartz oscillator to be applied to high-frequency components, the quartz substrate needs to be thinned so that its thickness can reach the required thickness. High frequency oscillation frequency. Referring to FIG. 1 , the current common practice of high frequency quartz oscillator 1 is to use thinning of the
然而,由於該石英基板11呈現其中間區域111較薄,週緣的支撐框架112厚度較大的結構,因此,於其頂電極12的製程中,須要將該頂電極12延伸至該支撐框架112,會因為該中間區域111與該支撐框架112之間的厚度差,造成該頂電極12的製程不易控制,此外,因為該支撐框架112厚度較大,因此,於將該底電極13延伸至該石英基板11的頂面時,也需要爬升較大的厚度。However, since the
因此,本發明的目的,即在提供一種石英振盪器的製作方法,有利於其電極的製作。Therefore, the purpose of the present invention is to provide a method for manufacturing a quartz oscillator, which is beneficial to the manufacture of its electrodes.
於是,本發明石英振盪器的製作方法,包含一第一電極部製作步驟、一貼合步驟、一薄化步驟、一第二電極製作步驟、一延伸電極製作步驟,及一框架設置步驟。Therefore, the manufacturing method of the quartz oscillator of the present invention includes a first electrode part manufacturing step, a laminating step, a thinning step, a second electrode manufacturing step, an extending electrode manufacturing step, and a frame setting step.
該第一電極部製作步驟是於一具有預定厚度的壓電基板的其中一表面形成一第一電極部,得到一第一中間物。The first electrode part fabrication step is to form a first electrode part on one surface of a piezoelectric substrate with a predetermined thickness to obtain a first intermediate.
該貼合步驟是將該第一中間物以該第一電極部朝向一暫時基板的方向貼合於該暫時基板,得到一第二中間物。In the laminating step, the first intermediate is attached to the temporary substrate in a direction in which the first electrode portion faces the temporary substrate to obtain a second intermediate.
該薄化步驟是將該第二中間物的壓電基板進行全面薄化,而得到一整體厚度小於該壓電基板的薄化壓電基板。In the thinning step, the piezoelectric substrate of the second intermediate is fully thinned to obtain a thinned piezoelectric substrate with an overall thickness smaller than that of the piezoelectric substrate.
該第二電極製作步驟是於該薄化壓電基板反向該暫時基板的表面且相應於該第一電極部的位置形成一第二電極,並令該第二電極的正投影與該第一電極部至少部分重合。In the second electrode fabrication step, a second electrode is formed on the surface of the thinned piezoelectric substrate opposite to the surface of the temporary substrate and corresponding to the position of the first electrode portion, and the orthographic projection of the second electrode is aligned with that of the first electrode. The electrode portions at least partially overlap.
該延伸電極製作步驟是形成一自該第一電極部延伸並沿著該薄化壓電基板的側周面延伸至該薄化壓電基板形成有該第二電極的表面的第一延伸電極部。The extended electrode fabrication step is to form a first extended electrode portion extending from the first electrode portion and extending along the side peripheral surface of the thinned piezoelectric substrate to the surface of the thinned piezoelectric substrate on which the second electrode is formed .
該框架設置步驟是將一具有預定厚度的中空框架貼合在該薄化壓電基板形成有該第二電極的表面,並令該中空框架框圍該第二電極。In the frame setting step, a hollow frame with a predetermined thickness is attached to the surface of the thinned piezoelectric substrate on which the second electrode is formed, and the hollow frame surrounds the second electrode.
此外,本發明的另一目的,即在提供一種由如前所述的製作方法所製得的石英振盪器。In addition, another object of the present invention is to provide a quartz oscillator manufactured by the aforementioned manufacturing method.
於是,本發明石英振盪器,包含一薄化壓電基板、一第一電極、一第二電極、一中空框架,及一黏膠層。Therefore, the quartz oscillator of the present invention includes a thinned piezoelectric substrate, a first electrode, a second electrode, a hollow frame, and an adhesive layer.
該薄化壓電基板具有相同厚度,包括彼此反向的一第一表面及一第二表面。The thinned piezoelectric substrate has the same thickness and includes a first surface and a second surface opposite to each other.
該第一電極包括一位於該薄化壓電基板的該第一表面的第一電極部,及一自該第一電極部延伸並沿著該薄化壓電基板的側周面延伸至該第二表面的延伸電極部。The first electrode includes a first electrode portion located on the first surface of the thinned piezoelectric substrate, and a first electrode portion extending from the first electrode portion and extending along the side peripheral surface of the thinned piezoelectric substrate to the first electrode portion Extended electrode portions on both surfaces.
該第二電極位於該薄化壓電基板的該第二表面,具有一與該第一電極部的正投影範圍部分疊合的第二電極部,及一自該第二電極部延伸至與該第一延伸電極部位於同側的第二延伸電極部。The second electrode is located on the second surface of the thinned piezoelectric substrate, and has a second electrode portion partially overlapping with the orthographic projection range of the first electrode portion, and a second electrode portion extending from the second electrode portion to the The first extension electrode portion is located on the same side of the second extension electrode portion.
該中空框架與該薄化壓電基板的第二表面黏接。The hollow frame is bonded to the second surface of the thinned piezoelectric substrate.
該黏膠層介於該薄化壓電基板與該中空框架之間,用於接合該薄化壓電基板與該中空框架。The adhesive layer is interposed between the thinned piezoelectric substrate and the hollow frame for bonding the thinned piezoelectric substrate and the hollow frame.
本發明的功效在於:通過先將形成有該第一電極部的該壓電基板貼合於該暫時基板,並將該壓電基板整體薄化後而形成該薄化壓電基板,再形成該第二電極,因為薄化後的該薄化壓電基板有該暫時基板支撐,因此可避免該薄化壓電基板因厚度較薄而於製程中碎裂的問題,此外,因該薄化壓電基板厚度較薄且表面平坦,因此,可更有利於電極的製作。The effect of the present invention lies in that the thinned piezoelectric substrate is formed by first bonding the piezoelectric substrate formed with the first electrode portion to the temporary substrate, and then thinning the piezoelectric substrate as a whole, and then forming the thinned piezoelectric substrate. For the second electrode, since the thinned piezoelectric substrate is supported by the temporary substrate, it can avoid the problem of the thinned piezoelectric substrate being cracked during the manufacturing process due to its thin thickness. The thickness of the electrical substrate is thin and the surface is flat, so it is more favorable for the fabrication of electrodes.
有關本發明之相關技術內容、特點與功效,在以下配合參考圖式之實施例的詳細說明中,將可清楚的呈現。此外,要說明的是,本發明圖式僅為表示元件間的結構及/或位置相對關係,與各元件的實際尺寸並不相關。The related technical content, features and effects of the present invention will be clearly presented in the following detailed description of the embodiments with reference to the drawings. In addition, it should be noted that the drawings of the present invention only show the relative structure and/or positional relationship among the elements, and are not related to the actual size of each element.
參閱圖4、圖5,本發明石英振盪器的製作方法的一實施例是用以製作如圖4與圖5所示的石英振盪器400。該石英振盪器400包含一薄化壓電基板2、一第一電極3、一第二電極4、一中空框架5,及一黏膠層6。Referring to FIGS. 4 and 5 , an embodiment of a method for manufacturing a quartz oscillator of the present invention is used to manufacture the
該薄化壓電基板2的整體具有相同厚度,包括彼此反向的一第一表面21及一第二表面22。該薄化壓電基板2由壓電材料所構成,其厚度或外型可視使用需求而有不同態樣,並無特別限制,且根據該薄化壓電基板2的厚度、晶體結構或是形狀不同,能產生相應的振盪頻率,相關的條件參數已為相關領域知悉,在此不特別描述。在本實施例中,該薄化壓電基板2為厚度不大於50μm的石英晶體,並具有良好的高頻頻率穩定度。於一些實施例中,該薄化壓電基板2的厚度不大於10μm。The entire thinned
該第一電極3位於該薄化壓電基板2的第一表面21,包括一位於該第一表面21的第一電極部31,及一自該第一電極部31延伸並沿著該薄化壓電基板2的側周面延伸至該第二表面22的第一延伸電極部32。The first electrode 3 is located on the
該第二電極4位於該薄化壓電基板2的第二表面22,包括一與該第一電極部31的正投影範圍部分疊合的第二電極部41,及一自該第二電極部41延伸至該薄化壓電基板2週緣並與該第一延伸電極部32位於同一側的第二延伸電極部42。The
在本實施例中,該第一電極部31、第二電極部41、該第一延伸電極部32,及該第二延伸電極部42的材料可各自選自金、銀或鋁,且彼此可以由相同或不同的材料構成。In this embodiment, the materials of the
該中空框架5通過該黏膠層6貼合在該薄化壓電基板2的第二表面22,並具有一預定厚度。The
詳細的說,該中空框架5會框圍該第二電極部41並與該薄化壓電基板2的邊緣成一距離間隔,而讓該第二電極部41位於該中空框架5的框圍範圍內,並令該第二表面22具有一位於該中空框架5外圍的邊緣區。該第二延伸電極部42可經由該第二表面22延伸並通過該中空框架5而位於該邊緣區;該第一延伸電極部32也同樣會自該第一表面21延伸至該第二表面22的邊緣區,而與第二延伸電極部42位於同側,藉由該第一延伸電極部32與該第二延伸電極部42將該第一電極3與該第二電極4延伸至同一表面,而可更易於對外電連接。此外,透過具有預定厚度的該中空框架5提供該薄化壓電基板2一機械支撐力,以避免製得的該石英振盪器400在後續封裝製程或使用過程中損毀,同時還能作為一供夾持或設置於其他元件的連接區域,而利於該石英振盪器400後續封裝或配置於電子產品中。Specifically, the
於一些實施例中,該中空框架5的寬度、形狀及位置可視依需求或設計而有所不同,只要可令該第一電極3的延伸電極部32與該第二電極4的延伸電極部42能露出於該薄化壓電基板2的第二表面22週緣,以供對外電連接即可,並無具體限制。In some embodiments, the width, shape and position of the
參閱圖2與圖3,前述該石英振盪器的製作方法的該實施例包含:一第一電極部製作步驟71、一貼合步驟72、一薄化步驟73、一第二電極製作步驟74、一延伸電極製作步驟75、一框架設置步驟76,及一移除步驟77。Referring to FIGS. 2 and 3 , the foregoing embodiment of the method for fabricating the quartz oscillator includes: a first electrode
該第一電極部製作步驟71是於一具有預定厚度的壓電基板20的其中一表面以沉積或印刷方式形成該第一電極部31,得到一第一中間物200。在本實施例中,該壓電基板20是由一具有原始厚度約為100μm的石英晶體構成,且該第一電極部31是以導電材料透過沉積的方式形成於該壓電基板20上且其中一側端會與該壓電基板20的側周面齊平。The first electrode
該貼合步驟72是將該第一中間物200以該第一電極部31朝向一暫時基板30的方向透過一膠材貼合於該暫時基板30,以在後續製程提供一暫時性的支撐,而得到一第二中間物300。為了易於後續該暫時基板30的移除,該膠材可選自光解黏材料或熱解黏材料。The attaching
要說明的是,該暫時基板30的寬度可等於、大於、或小於該壓電基板20的寬度。於一些實施例中,可令該暫時基板30的寬度小於該壓電基板20的寬度,而不完全遮覆該第一電極部31,以易於該第一延伸電極部31的製作。It should be noted that the width of the
該薄化步驟73是將該第二中間物300的壓電基板20進行全面薄化,而得到該薄化壓電基板2。實施時,該壓電基板20可以研磨或化學蝕刻(濕蝕刻、乾蝕刻)的方式進行全面薄化而得到該薄化壓電基板2,且令該薄化壓電基板2整體具有相同的厚度。The thinning
要說明的是,由於該壓電基板2於薄化的過程中有該暫時基板30作為支撐,因此,其厚度可薄化至極薄,而可更適用於高頻振盪。以該壓電基板20的厚度為100μm為例,該薄化壓電基板2的厚度可薄化至不大於50μm,或是不大於10μm的厚度。It should be noted that, since the
該第二電極製作步驟74是於該薄化壓電基板2反向該暫時基板30的表面且相應於該第一電極部31的位置透過沉積或印刷的方式形成該第二電極4,並令該第二電極4的正投影與該第一電極部31至少部分重合。The second
具體的說,該第二電極製作步驟74是於該薄化壓電基板2表面的中央區域以沉積或印刷方式形成與該第一電極部31的正投影範圍部分疊合的該第二電極部41,及自該第二電極部41延伸至該薄化壓電基板2週緣的該第二延伸電極部42(見圖4),而製得該第二電極2。Specifically, the second
該延伸電極製作步驟75是以印刷或鍍膜方式形成自該第一電極部31延伸並沿著該薄化壓電基板2的側周面延伸至該薄化壓電基板2形成有該第二電極4的表面的該第一延伸電極部32。在本實施例中,該第一電極3的第一延伸電極部32是以導電材料透過印刷方式形成。The extended
要說明的是,該第二電極製作步驟74與該延伸電極製作步驟75可依製程需求而有不同的實行順序。It should be noted that, the second
該框架設置步驟76是將具有預定厚度的該中空框架5利用黏膠形成的該黏膠層6貼合在該薄化壓電基板2形成有該第二電極4的表面,並令該中空框架5框圍該第二電極4的第二電極部41。其中,該中空框架5是由一絕緣材料構成的基板通過預加工形成所需的形狀、尺寸後,再利用黏膠將其貼合至該薄化壓電基板2,且該預加工可透過CNC車床、雷射裁切或是蝕刻等方式進行。The
最後,實施該移除步驟77,將該暫時基板30自該薄化壓電基板2移除,而得到該石英振盪器400。Finally, the removing
該移除步驟77可視該貼合步驟72中使用的膠材,而選擇相應的移除方式。例如,該膠材為使用光解黏材料或熱解黏材料時,該移除步驟77則可使用照光或加熱方式,移除該暫時基板30。In the removing
該石英振盪器400可透過後續封裝,而應用於電子產品。The
在本實施例的製作方法中,該薄化壓電基板2因為整體具有相同厚度,因此該第二延伸電極部42也為平面延伸,而不會如習知的高頻石英振盪器1(參圖1)的頂電極12會形成在有不同厚度差的表面,且該第一電極3的延伸電極部32只需沿著經薄化的該薄化壓電基板2的側周面延伸至該第二表面22,相較於傳統的高頻石英振盪器1的底電極13須延伸爬過較厚的該支撐框架112,本實施例的製作方法更有利於電極的製作,進而提升產品的良率。In the manufacturing method of the present embodiment, since the thinned
綜上所述,本發明石英振盪器的製作方法透過先將形成有該第一電極部31的壓電基板20貼合於該暫時基板30,再將該壓電基板20進行全面薄化,再於薄化後得到的該薄化壓電基板2表面形成該第二電極4,因為薄化後的該薄化壓電基板2有該暫時基板30支撐,因此能更有效薄化,且能避免該薄化壓電基板2因厚度較薄而於製程中碎裂的問題,此外,因為該薄化壓電基板2的表面平坦,因此,該第二延伸電極部42於延伸時也為平面延伸,而可避免習知(如圖1所示),由於該石英基板11的中間區域111與週緣的支撐框架112的厚度不同,使該頂電極12於延伸至該支撐框架112的過程需要經過該中間區域111與該支撐框架112的厚度差,而使得該頂電極12製程複雜且有良率不易控制的問題;此外,因為薄化後的該薄化壓電基板2的整體厚度極薄,因此,於製作該第一延伸電極部32時的延伸高度也大幅減小,而可更有利於該第一電極3與該第二電極4的製作。此外,通過該中空框架5增加該石英振盪器400週緣的厚度,能提高該石英振盪器400在產生高頻振盪期間的承受力,而使該石英振盪器400同時能維持良好的高頻振盪性與足夠的機械支撐力,故確實可達成本發明的目的。To sum up, the method for manufacturing a quartz oscillator of the present invention involves firstly attaching the
惟以上所述者,僅為本發明的實施例而已,當不能以此限定本發明實施的範圍,凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本發明專利涵蓋的範圍內。However, the above are only examples of the present invention, and should not limit the scope of implementation of the present invention. Any simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the contents of the patent specification are still included in the scope of the present invention. within the scope of the invention patent.
20:壓電基板 2:薄化壓電基板 21:第一表面 22:第二表面 30:暫時基板 3:第一電極 31:第一電極部 32:第一延伸電極部 4:第二電極 41:第二電極部 42:第二延伸電極部 5:中空框架 6:黏膠層 200:第一中間物 300:第二中間物 400:石英振盪器 71:第一電極部製作步驟 72:貼合步驟 73:薄化步驟 74:第二電極製作步驟 75:延伸電極製作步驟 76:框架設置步驟 77:移除步驟20: Piezoelectric substrate 2: Thin piezoelectric substrate 21: First surface 22: Second surface 30: Temporary substrate 3: The first electrode 31: The first electrode part 32: The first extension electrode part 4: The second electrode 41: Second electrode part 42: Second extension electrode part 5: Hollow frame 6: Adhesive layer 200: First Intermediate 300: Second Intermediate 400: Quartz oscillator 71: First electrode part fabrication steps 72: Fitting step 73: Thinning step 74: Second electrode fabrication steps 75: Extension electrode fabrication steps 76: Frame Setup Steps 77: Removal step
本發明的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一剖視示意圖,說明習知的一高頻石英振盪器的剖視結構; 圖2是一流程圖,說明本發明實施例的石英振盪器的製作方法; 圖3是一流程示意圖,輔助說明圖2該石英振盪器的製作方法; 圖4是一俯視圖,說明該石英振盪器的俯視結構;及 圖5是一剖視圖,輔助說明沿圖4的V-V割面線的剖視結構。Other features and effects of the present invention will be clearly shown in the embodiments with reference to the drawings, wherein: FIG. 1 is a schematic cross-sectional view illustrating the cross-sectional structure of a conventional high-frequency quartz oscillator; FIG. 2 is a A flowchart illustrating a method for manufacturing a quartz oscillator according to an embodiment of the present invention; FIG. 3 is a schematic flowchart illustrating the method for manufacturing the quartz oscillator in FIG. 2 ; FIG. 4 is a plan view illustrating a top-view structure of the quartz oscillator. and FIG. 5 is a cross-sectional view to assist in explaining the cross-sectional structure along the V-V secant line in FIG. 4 .
20:壓電基板 20: Piezoelectric substrate
2:薄化壓電基板 2: Thin piezoelectric substrate
21:第一表面 21: First surface
22:第二表面 22: Second surface
30:暫時基板 30: Temporary substrate
3:第一電極 3: The first electrode
31:第一電極部 31: The first electrode part
32:第一延伸電極部 32: The first extension electrode part
4:第二電極 4: The second electrode
41:第二電極部 41: Second electrode part
42:第二延伸電極部 42: Second extension electrode part
5:中空框架 5: Hollow frame
6:黏膠層 6: Adhesive layer
200:第一中間物 200: First Intermediate
300:第二中間物 300: Second Intermediate
400:石英振盪器 400: Quartz oscillator
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TWI479707B (en) * | 2010-03-09 | 2015-04-01 | Nihon Dempa Kogyo Co | Surface mount crystal oscillator and manufacturing method of the same |
US9413293B2 (en) * | 2013-04-22 | 2016-08-09 | Murata Manufacturing Co., Ltd. | Crystal device |
US20190109577A1 (en) * | 2016-06-23 | 2019-04-11 | Murata Manufacturing Co., Ltd. | Quartz crystal resonator and quartz crystal resonator unit |
US10511282B2 (en) * | 2014-04-24 | 2019-12-17 | Murata Manufacturing Co., Ltd. | Crystal-oscillating device and manufacturing method therefor |
WO2020202966A1 (en) * | 2019-03-29 | 2020-10-08 | 株式会社村田製作所 | Electronic device and method for manufacturing same |
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TWI479707B (en) * | 2010-03-09 | 2015-04-01 | Nihon Dempa Kogyo Co | Surface mount crystal oscillator and manufacturing method of the same |
US9413293B2 (en) * | 2013-04-22 | 2016-08-09 | Murata Manufacturing Co., Ltd. | Crystal device |
US10511282B2 (en) * | 2014-04-24 | 2019-12-17 | Murata Manufacturing Co., Ltd. | Crystal-oscillating device and manufacturing method therefor |
US20190109577A1 (en) * | 2016-06-23 | 2019-04-11 | Murata Manufacturing Co., Ltd. | Quartz crystal resonator and quartz crystal resonator unit |
WO2020202966A1 (en) * | 2019-03-29 | 2020-10-08 | 株式会社村田製作所 | Electronic device and method for manufacturing same |
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