TWI761908B - Heat treatment method and heat treatment apparatus - Google Patents
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 92
- 239000000112 cooling gas Substances 0.000 claims abstract description 51
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000001816 cooling Methods 0.000 claims abstract description 28
- 239000001307 helium Substances 0.000 claims abstract description 18
- 229910052734 helium Inorganic materials 0.000 claims abstract description 18
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000001678 irradiating effect Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 63
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 124
- 229910052736 halogen Inorganic materials 0.000 abstract description 73
- 150000002367 halogens Chemical class 0.000 abstract description 73
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 13
- 238000005286 illumination Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 120
- 238000012546 transfer Methods 0.000 description 57
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- 238000012545 processing Methods 0.000 description 30
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 239000012535 impurity Substances 0.000 description 13
- 229910052724 xenon Inorganic materials 0.000 description 11
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- 230000007423 decrease Effects 0.000 description 2
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 241001417501 Lobotidae Species 0.000 description 1
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- 229910052743 krypton Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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Abstract
本發明提供一種可高效迅速地使腔室內冷卻之熱處理方法及熱處理裝置。 由閃光燈對藉由來自鹵素燈之光照射而預加熱之半導體晶圓之正面照射閃光。藉由照射閃光，而半導體晶圓之正面於短時間內快速升溫。閃光照射結束後，於鹵素燈熄滅之同時，向腔室內供給具有較氮氣高之熱導率之氦氣作為冷卻氣體。藉由供給具有較高冷卻能力之氦氣，可高效迅速地使包含半導體晶圓及氣密漲圈之腔室內冷卻。The present invention provides a heat treatment method and heat treatment device capable of cooling the chamber efficiently and rapidly. The front side of the semiconductor wafer preheated by illumination from the halogen lamp is irradiated with a flash by a flash. By irradiating the flash, the front side of the semiconductor wafer rapidly heats up in a short period of time. After the flash irradiation was completed, while the halogen lamp was extinguished, helium gas having a higher thermal conductivity than nitrogen gas was supplied as a cooling gas into the chamber. By supplying helium gas with high cooling capacity, the chamber containing the semiconductor wafer and the hermetic expansion ring can be cooled efficiently and rapidly.
Description
本發明係關於一種藉由對半導體晶圓等薄板狀精密電子基板(以下，簡稱為「基板」)照射閃光而加熱該基板之熱處理方法及熱處理裝置。The present invention relates to a heat treatment method and a heat treatment apparatus for heating a thin-plate precision electronic substrate (hereinafter, simply referred to as a "substrate") such as a semiconductor wafer by irradiating the substrate with flash.
於半導體元件之製造過程中，極短時間內加熱半導體晶圓之閃光燈退火(FLA)備受關注。閃光燈退火係藉由使用氙閃光燈(以下，簡單寫作「閃光燈」時即意指氙閃光燈)對半導體晶圓之正面照射閃光，而僅使半導體晶圓之正面於極短時間(幾毫秒以下)內升溫之熱處理技術。In the manufacturing process of semiconductor devices, flash lamp annealing (FLA), which heats semiconductor wafers in a very short time, has attracted much attention. Flash annealing is by using a xenon flash lamp (hereinafter, simply referred to as "flash lamp", which means xenon flash lamp) to irradiate a flash on the front side of the semiconductor wafer, and only make the front side of the semiconductor wafer flash for a very short time (less than a few milliseconds) Elevated heat treatment technology.
氙閃光燈之輻射光譜分佈為紫外區至近紅外區，波長較先前之鹵素燈短，基礎吸收帶與矽半導體晶圓大體一致。因此，由氙閃光燈對半導體晶圓照射閃光時，透過光較少，能夠使半導體晶圓快速升溫。又，亦已判明：若閃光照射僅持續幾毫秒以下之極短時間，則可選擇性地僅使半導體晶圓之正面附近升溫。The radiation spectrum of xenon flash lamp is from the ultraviolet region to the near infrared region, the wavelength is shorter than that of the previous halogen lamp, and the basic absorption band is roughly the same as that of the silicon semiconductor wafer. Therefore, when the semiconductor wafer is irradiated with flash light from the xenon flash lamp, the transmitted light is small, and the temperature of the semiconductor wafer can be rapidly increased. In addition, it has also been found that if the flash irradiation is continued for an extremely short time of several milliseconds or less, it is possible to selectively raise the temperature only in the vicinity of the front surface of the semiconductor wafer.
此種閃光燈退火被用於需要在極短時間內進行加熱之處理，例如典型而言被用於將注入至半導體晶圓之雜質活化。若由閃光燈對藉由離子注入法注入了雜質之半導體晶圓之正面照射閃光，則僅用極短時間便可使該半導體晶圓之正面升溫至活化溫度，可不使雜質較深地擴散，而僅執行雜質活化。Such flash annealing is used for processes that require heating in a very short time, such as is typically used to activate impurities implanted into semiconductor wafers. If the front surface of the semiconductor wafer into which the impurities have been implanted by the ion implantation method is irradiated with a flash lamp, the front surface of the semiconductor wafer can be heated to the activation temperature in a very short time, and the impurities can not be diffused deeply, and the Perform impurity activation only.
作為進行閃光燈退火之裝置，專利文獻1中揭示有如下裝置：於藉由來自鹵素燈之光照射進行半導體晶圓之預加熱後，由閃光燈照射閃光而將半導體晶圓之正面加熱1秒以下之極短時間。專利文獻1所揭示之閃光燈退火裝置中，於閃光加熱結束後，藉由自然冷卻使半導體晶圓之溫度降溫至特定溫度以下，然後將半導體晶圓從腔室搬出。 [先前技術文獻] [專利文獻]As an apparatus for performing flash annealing, Patent Document 1 discloses an apparatus in which, after preheating the semiconductor wafer by light irradiation from a halogen lamp, the front surface of the semiconductor wafer is heated for 1 second or less by flash light irradiation. very short time. In the flash annealing apparatus disclosed in Patent Document 1, after the flash heating is completed, the temperature of the semiconductor wafer is lowered to below a predetermined temperature by natural cooling, and then the semiconductor wafer is carried out from the chamber. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本專利特開2018-195686號公報[Patent Document 1] Japanese Patent Laid-Open No. 2018-195686
[發明所欲解決之問題][Problems to be Solved by Invention]
然而，於藉由自然冷卻使半導體晶圓降溫之情形時，半導體晶圓降溫至特定溫度以下需要相應時間，故產能提高受到阻礙。又，專利文獻1所揭示之裝置中，設置有用以向腔室內供給氣體之小徑氣密漲圈，但氣密漲圈之內壁面與正在冷卻之腔室之壁面呈分離狀態。因此，氣密漲圈本身之冷卻效率較低，還出現了來自半導體晶圓之反應產物導致氣密漲圈變色之問題。However, in the case of cooling the semiconductor wafer by natural cooling, it takes a corresponding time for the semiconductor wafer to cool down to a temperature below a certain temperature, so that the increase in productivity is hindered. In addition, in the apparatus disclosed in Patent Document 1, a small-diameter airtight expansion ring for supplying gas into the chamber is provided, but the inner wall surface of the airtight expansion ring is separated from the wall surface of the chamber being cooled. Therefore, the cooling efficiency of the airtight expansion ring itself is low, and the problem of discoloration of the airtight expansion ring caused by the reaction product from the semiconductor wafer occurs.
本發明係鑒於上述問題而完成者，其目的在於提供一種可高效迅速地使腔室內冷卻之熱處理方法及熱處理裝置。 [解決問題之技術手段]The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a heat treatment method and a heat treatment apparatus capable of cooling the chamber efficiently and rapidly. [Technical means to solve problems]
為解決上述問題，技術方案1之發明係一種熱處理方法，其係藉由對基板照射閃光而加熱該基板者，其特徵在於具備：收容步驟，其係將基板收容於腔室內；預加熱步驟，其係由連續照明燈對收容於上述腔室內之上述基板照射光而預加熱上述基板；閃光加熱步驟，其係由閃光燈對收容於上述腔室內之上述基板照射閃光而加熱上述基板；及冷卻步驟，其係向上述腔室內供給具有較氮氣高之熱導率之冷卻氣體。In order to solve the above-mentioned problem, the invention of claim 1 is a heat treatment method, which heats the substrate by irradiating a flash light on the substrate, and is characterized by comprising: an accommodating step of accommodating the substrate in a chamber; and a preheating step, The step of pre-heating the substrate by irradiating light to the substrate accommodated in the chamber by a continuous lighting lamp; the flash heating step of heating the substrate by irradiating the substrate accommodated in the chamber with a flash lamp; and the cooling step , which supplies a cooling gas with a higher thermal conductivity than nitrogen into the chamber.
又，技術方案2之發明係如技術方案1之發明之熱處理方法，其特徵在於：上述冷卻氣體為氫氣或氦氣。Furthermore, the invention of claim 2 is the heat treatment method of the invention of claim 1, wherein the cooling gas is hydrogen gas or helium gas.
又，技術方案3之發明係如技術方案1之發明之熱處理方法，其特徵在於：於對上述基板照射上述閃光之時間點以後開始供給上述冷卻氣體。In addition, the invention of
又，技術方案4之發明係如技術方案3之發明之熱處理方法，其特徵在於：於熄滅上述連續照明燈時開始供給上述冷卻氣體。Furthermore, the invention of
又，技術方案5之發明係如技術方案1至4中任一項之發明之熱處理方法，其特徵在於：於上述腔室內降溫至特定溫度時停止供給上述冷卻氣體。Furthermore, the invention of claim 5 is the heat treatment method according to any one of the inventions of claims 1 to 4, characterized in that the supply of the cooling gas is stopped when the temperature in the chamber is lowered to a specific temperature.
又，技術方案6之發明係一種熱處理裝置，其係藉由對基板照射閃光而加熱該基板者，其特徵在於具備：腔室，其收容基板；連續照明燈，其對收容於上述腔室內之上述基板照射光而預加熱上述基板；閃光燈，其對收容於上述腔室內之上述基板照射閃光而加熱上述基板；及氣體供給部，其向上述腔室內供給具有較氮氣高之熱導率之冷卻氣體。In addition, the invention of
又，技術方案7之發明係如技術方案6之發明之熱處理裝置，其特徵在於：上述冷卻氣體為氫氣或氦氣。Furthermore, the invention of
又，技術方案8之發明係如技術方案6之發明之熱處理裝置，其特徵在於：上述氣體供給部於對上述基板照射上述閃光之時間點以後開始供給上述冷卻氣體。The invention of claim 8 is the heat treatment apparatus of the invention of
又，技術方案9之發明係如技術方案8之發明之熱處理裝置，其特徵在於：上述氣體供給部於上述連續照明燈熄滅時開始供給上述冷卻氣體。Furthermore, the invention of
又，技術方案10之發明係如技術方案6至9中任一項之發明之熱處理裝置，其特徵在於：上述氣體供給部於上述腔室內降溫至特定溫度時停止供給上述冷卻氣體。
[發明之效果]The invention of
根據技術方案1至5之發明，因向腔室內供給具有較氮氣高之熱導率之冷卻氣體，故藉由具有較高冷卻能力之冷卻氣體，可高效迅速地使腔室內冷卻。According to the inventions of claims 1 to 5, since the cooling gas having a higher thermal conductivity than nitrogen is supplied into the chamber, the chamber can be cooled efficiently and rapidly by the cooling gas having a higher cooling capacity.
尤其是，根據技術方案5之發明，因於腔室內降溫至特定溫度時停止供給冷卻氣體，故可防止腔室內之構成零件過度冷卻，而使基板之溫度歷程均一。In particular, according to the invention of claim 5, the supply of the cooling gas is stopped when the temperature in the chamber is lowered to a specific temperature, so that excessive cooling of the components in the chamber can be prevented, and the temperature history of the substrate can be made uniform.
根據技術方案6至10之發明，因向腔室內供給具有較氮氣高之熱導率之冷卻氣體，故藉由具有較高冷卻能力之冷卻氣體，可高效迅速地使腔室內冷卻。According to the inventions of
尤其是，根據技術方案10之發明，因於腔室內降溫至特定溫度時停止供給冷卻氣體，故可防止腔室內之構成零件過度冷卻，而使基板之溫度歷程均一。In particular, according to the invention of
以下，參照圖式，對本發明之實施方式進行詳細說明。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
圖1係表示本發明之熱處理裝置1之構成之縱剖視圖。圖1之熱處理裝置1係閃光燈退火裝置，其藉由對作為基板之圓板形狀之半導體晶圓W進行閃光照射而加熱該半導體晶圓W。作為處理對象之半導體晶圓W之尺寸並無特別限定，例如為ϕ300 mm或ϕ450 mm(於本實施方式中為ϕ300 mm)。搬入熱處理裝置1之前之半導體晶圓W中注入有雜質，藉由利用熱處理裝置1實施加熱處理，而對所注入之雜質執行活化處理。再者，於圖1及其以後之各圖中，為了容易理解，視需要誇張或簡化地描繪各部之尺寸或數量。FIG. 1 is a longitudinal sectional view showing the structure of a heat treatment apparatus 1 of the present invention. The heat treatment apparatus 1 of FIG. 1 is a flash lamp annealing apparatus, which heats the semiconductor wafer W by flash irradiation to the semiconductor wafer W in the shape of a disk as a substrate. The size of the semiconductor wafer W to be processed is not particularly limited, but is, for example, ϕ300 mm or ϕ450 mm (ϕ300 mm in this embodiment). Impurities are implanted into the semiconductor wafer W before being transferred into the heat treatment apparatus 1 , and the implanted impurities are activated by heat treatment by the heat treatment apparatus 1 . In addition, in FIG. 1 and subsequent drawings, for easy understanding, the size or number of each part is exaggerated or simplified as necessary.
熱處理裝置1具備：腔室6，其收容半導體晶圓W；閃光加熱部5，其內置複數個閃光燈FL；及鹵素加熱部4，其內置複數個鹵素燈HL。於腔室6之上側設置有閃光加熱部5，並且於下側設置有鹵素加熱部4。又，熱處理裝置1具備：保持部7，其於腔室6之內部，將半導體晶圓W以水平姿勢保持；及移載機構10，其於保持部7與裝置外部之間進行半導體晶圓W之交接。進而，熱處理裝置1具備控制部3，上述控制部3對設置於鹵素加熱部4、閃光加熱部5及腔室6之各動作機構進行控制，使其等執行半導體晶圓W之熱處理。The thermal processing apparatus 1 includes: a
腔室6係於筒狀之腔室側部61之上下安裝石英製腔室窗而構成。腔室側部61具有上下開口之大致圓筒形狀，於上側開口安裝上側腔室窗63而將相應開口封閉，於下側開口安裝下側腔室窗64而將相應開口封閉。構成腔室6之頂壁之上側腔室窗63係由石英形成之圓板形狀構件，作為使從閃光加熱部5出射之閃光透射至腔室6內之石英窗發揮功能。又，構成腔室6之底板部之下側腔室窗64亦為由石英形成之圓板形狀構件，作為使來自鹵素加熱部4之光透射至腔室6內之石英窗發揮功能。The
又，於腔室側部61內側之壁面上部安裝有氣密漲圈90，於下部安裝有反射環69。氣密漲圈90及反射環69均形成為圓環狀。腔室6之內側空間，即由上側腔室窗63、下側腔室窗64、腔室側部61、反射環69及氣密漲圈90包圍之空間被界定為熱處理空間65。In addition, an
於腔室側部61安裝反射環69及氣密漲圈90使得腔室6之內壁面形成凹部62。即，形成由腔室側部61之內壁面中未安裝反射環69及氣密漲圈90之中央部分、反射環69之上端面、及氣密漲圈90之下端面包圍之凹部62。凹部62於腔室6之內壁面沿水平方向形成為圓環狀，圍繞保持半導體晶圓W之保持部7。The
又，於腔室側部61，形成設置有用以相對於腔室6進行半導體晶圓W之搬入及搬出之搬送開口部(爐口)66。搬送開口部66被設為能夠藉由閘閥185而開閉。搬送開口部66連通連接於凹部62之外周面。因此，當閘閥185將搬送開口部66打開時，可將半導體晶圓W從搬送開口部66通過凹部62向熱處理空間65搬入、及將半導體晶圓W從熱處理空間65搬出。又，若閘閥185將搬送開口部66閉鎖，則腔室6內之熱處理空間65成為密閉空間。Further, in the
進而，於腔室側部61，貫穿設置有貫通孔61a。於腔室側部61之外壁面中設置有貫通孔61a之部位，安裝有輻射溫度計20。貫通孔61a係用以將紅外光引導至輻射溫度計20之圓筒狀孔，上述紅外光係從後述之晶座74所保持之半導體晶圓W之下表面放射者。貫通孔61a以其貫通方向之軸與保持於晶座74之半導體晶圓W之主面相交之方式，相對於水平方向傾斜地設置。於貫通孔61a之面向熱處理空間65一側之端部，安裝有透明窗21，該透明窗21係以使輻射溫度計20所能測定之波長區域之紅外光透過之氟化鋇材料構成。Furthermore, in the
又，於腔室6之內壁上部，形成設置有向熱處理空間65供給處理氣體之氣體噴出口81。氣體噴出口81形成設置於氣密漲圈90與上側腔室窗63之間。氣體噴出口81經由氣密漲圈90之內部空間連通連接於氣體供給管83。氣體供給管83連接於處理氣體供給源85。又，於氣體供給管83之路徑中途介插有閥84。若打開閥84，則從處理氣體供給源85向氣密漲圈90輸送處理氣體。於氣密漲圈90之內部空間設置有緩衝空間及迷宮式構造。從處理氣體供給源85輸送至氣密漲圈90之處理氣體要通過氣密漲圈90之內部空間，因此其沿著腔室6之徑向及周向之流速降低，而從氣體噴出口81均勻地噴出至熱處理空間65。作為處理氣體，例如可使用氮氣(N2
)等惰性氣體、或氫氣(H2
)、氨氣(NH3
)等反應性氣體、或者混合其等而成之混合氣體(於本實施方式中為氮氣)。又，處理氣體供給源85亦可輸送氦氣(He)或氫氣作為冷卻氣體。In addition, on the upper part of the inner wall of the
另一方面，於腔室6之內壁下部，形成設置有將熱處理空間65內之氣體排出之氣體排氣孔86。氣體排氣孔86形成設置於較凹部62靠下側位置，亦可設置於反射環69。氣體排氣孔86經由呈圓環狀形成於腔室6之側壁內部之緩衝空間87而連通連接於氣體排氣管88。氣體排氣管88連接於排氣部190。又，於氣體排氣管88之路徑中途介插有閥89。若打開閥89，則熱處理空間65中之氣體從氣體排氣孔86經過緩衝空間87向氣體排氣管88排出。再者，處理氣體供給源85及排氣部190既可為設置於熱處理裝置1之機構，亦可為設置熱處理裝置1之工廠之設施。On the other hand, in the lower part of the inner wall of the
又，於搬送開口部66之前端亦連接有將熱處理空間65內之氣體排出之氣體排氣管191。氣體排氣管191經由閥192連接於排氣部190。藉由打開閥192，腔室6內之氣體經由搬送開口部66排出。Moreover, the
圖2係表示保持部7之整體外觀之立體圖。保持部7具備基台環71、連結部72及晶座74而構成。基台環71、連結部72及晶座74均由石英形成。即，保持部7之整體由石英形成。FIG. 2 is a perspective view showing the overall appearance of the holding
基台環71係自圓環形狀切除一部分而成之圓弧形狀之石英構件。該切除部分係為了防止後述移載機構10之移載臂11與基台環71之干涉而設置。基台環71載置於凹部62之底面，藉此由腔室6之壁面支持(參照圖1)。於基台環71之上表面，沿著其圓環形狀之周向豎立設置有複數個連結部72(於本實施方式中為4個)。連結部72亦為石英構件，藉由熔接固著於基台環71。The
晶座74由設置於基台環71之4個連結部72支持。圖3係晶座74之俯視圖。又，圖4係晶座74之剖視圖。晶座74具備保持板75、導引環76及複數個基板支持銷77。保持板75係由石英形成之大致圓形之平板狀構件。保持板75之直徑大於半導體晶圓W之直徑。即，保持板75具有較半導體晶圓W大之平面尺寸。The
於保持板75之上表面周緣部設置有導引環76。導引環76係具有較半導體晶圓W之直徑大之內徑的圓環形狀之構件。例如，於半導體晶圓W之直徑為ϕ300 mm之情形時，導引環76之內徑為ϕ320 mm。導引環76之內周係如從保持板75朝向上方變寬般之傾斜面。導引環76由與保持板75相同之石英形成。導引環76既可熔接於保持板75之上表面，亦可藉由另行加工之銷等固定於保持板75。或者，亦可將保持板75與導引環76加工成一體之構件。A
保持板75之上表面中較導引環76靠內側之區域被設為保持半導體晶圓W之平面狀之保持面75a。於保持板75之保持面75a，豎立設置有複數個基板支持銷77。於本實施方式中，沿著保持面75a中與外周圓(導引環76之內周圓)為同心圓之圓周上每隔30°豎立設置有共計12個基板支持銷77。配置有12個基板支持銷77之圓之直徑(相對向之基板支持銷77間之距離)小於半導體晶圓W之直徑，若半導體晶圓W之直徑為ϕ300 mm，則上述圓之直徑為ϕ270 mm～ϕ280 mm(於本實施方式中為ϕ270 mm)。各個基板支持銷77由石英形成。複數個基板支持銷77可藉由熔接而設置於保持板75之上表面，亦可與保持板75一體地加工。In the upper surface of the holding
返回圖2，豎立設置於基台環71之4個連結部72與晶座74之保持板75之周緣部藉由熔接而固著。即，晶座74與基台環71藉由連結部72固定地連結。此種保持部7之基台環71由腔室6之壁面支持，藉此保持部7安裝於腔室6。於保持部7安裝於腔室6之狀態下，晶座74之保持板75成為水平姿勢(法線與鉛直方向一致之姿勢)。即，保持板75之保持面75a成為水平面。Returning to FIG. 2 , the four connecting
搬入腔室6之半導體晶圓W係以水平姿勢載置於安裝在腔室6之保持部7之晶座74之上被保持。此時，半導體晶圓W由豎立設置於保持板75上之12個基板支持銷77支持而保持於晶座74。更嚴密而言，12個基板支持銷77之上端部接觸於半導體晶圓W之下表面而支持該半導體晶圓W。因12個基板支持銷77之高度(基板支持銷77之上端至保持板75之保持面75a之距離)均一，故可藉由12個基板支持銷77將半導體晶圓W以水平姿勢支持。The semiconductor wafer W carried into the
又，半導體晶圓W藉由複數個基板支持銷77，與保持板75之保持面75a隔開特定間隔地受到支持。導引環76之厚度大於基板支持銷77之高度。因此，可藉由導引環76來防止由複數個基板支持銷77支持之半導體晶圓W之水平方向之位置偏移。In addition, the semiconductor wafer W is supported by the plurality of substrate support pins 77 at a predetermined interval from the holding
又，如圖2及圖3所示，於晶座74之保持板75，沿上下貫通地形成有開口部78。開口部78係為了供輻射溫度計20接收從半導體晶圓W之下表面放射之放射光(紅外光)而設置。即，輻射溫度計20經由開口部78及安裝於腔室側部61之貫通孔61a之透明窗21，接收從半導體晶圓W之下表面放射之光，而測定該半導體晶圓W之溫度。進而，於晶座74之保持板75，貫穿設置有供後述移載機構10之頂起銷12貫通以交接半導體晶圓W之4個貫通孔79。Moreover, as shown in FIGS. 2 and 3 , the holding
圖5係移載機構10之俯視圖。又，圖6係移載機構10之側視圖。移載機構10具備2根移載臂11。移載臂11係如沿著大致圓環狀之凹部62般之圓弧形狀。於各個移載臂11豎立設置有2根頂起銷12。移載臂11及頂起銷12由石英形成。各移載臂11能夠藉由水平移動機構13而旋動。水平移動機構13使一對移載臂11於相對於保持部7進行半導體晶圓W之移載之移載動作位置(圖5之實線位置)、與俯視下不和保持於保持部7之半導體晶圓W重疊之退避位置(圖5之二點鏈線位置)之間水平移動。作為水平移動機構13，可為藉由個別之馬達使各移載臂11分別旋動者，亦可為使用連桿機構藉由1個馬達使一對移載臂11連動地旋動者。FIG. 5 is a top view of the
又，一對移載臂11藉由升降機構14而與水平移動機構13一起升降移動。若升降機構14使一對移載臂11於移載動作位置上升，則共計4根頂起銷12通過貫穿設置於晶座74之貫通孔79(參照圖2、3)，頂起銷12之上端從晶座74之上表面突出。另一方面，若升降機構14使一對移載臂11於移載動作位置下降而將頂起銷12從貫通孔79拔出，且水平移動機構13使一對移載臂11以打開之方式移動，則各移載臂11移動至退避位置。一對移載臂11之退避位置為保持部7之基台環71之正上方。因基台環71載置於凹部62之底面，故移載臂11之退避位置為凹部62之內側。再者，於設置有移載機構10之驅動部(水平移動機構13及升降機構14)之部位附近，亦設置有省略圖示之排氣機構，該排氣機構構成為將移載機構10之驅動部周邊之環境氣體排出至腔室6之外部。Moreover, the pair of
返回圖1，於腔室6，設置有輻射溫度計20及溫度感測器29。輻射溫度計20設置於由晶座74保持之半導體晶圓W之斜下方。輻射溫度計20接收從半導體晶圓W之下表面放射之紅外光，根據該紅外光之強度測定該下表面之溫度。另一方面，溫度感測器29係使用熱電偶構成。溫度感測器29安裝於腔室內6之內壁面。溫度感測器29測定腔室6內之環境氣體溫度。Returning to FIG. 1 , the
設置於腔室6上方之閃光加熱部5係於殼體51之內側具備光源及反射器52而構成，上述光源包含複數根(於本實施方式中為30根)氙閃光燈FL，上述反射器52以覆蓋該光源上方之方式設置。又，於閃光加熱部5之殼體51之底部安裝有燈光放射窗53。構成閃光加熱部5之底板部之燈光放射窗53係由石英形成之板狀石英窗。藉由將閃光加熱部5設置於腔室6上方，使得燈光放射窗53與上側腔室窗63相對向。閃光燈FL從腔室6上方經由燈光放射窗53及上側腔室窗63對熱處理空間65照射閃光。The flash heating unit 5 disposed above the
複數個閃光燈FL各自為具有長條之圓筒形狀之棒狀燈，以各者之長度方向沿著保持於保持部7之半導體晶圓W之主面(亦即沿著水平方向)相互平行之方式排列成平面狀。因此，藉由閃光燈FL之排列而形成之平面亦為水平面。排列有複數個閃光燈FL之區域大於半導體晶圓W之平面尺寸。Each of the plurality of flash lamps FL is a rod-shaped lamp having an elongated cylindrical shape, and the length directions of the respective flash lamps FL are parallel to each other along the main surface (ie, along the horizontal direction) of the semiconductor wafer W held by the holding
氙閃光燈FL具備：圓筒形狀之玻璃管(放電管)，其內部封入有氙氣且其兩端部配設有與電容器連接之陽極及陰極；以及觸發電極，其附設於該玻璃管之外周面上。由於氙氣為電絕緣體，故即便於電容器中儲存有電荷，於通常狀態下玻璃管內亦不會有電流過。然而，當對觸發電極施加高電壓而破壞了絕緣時，儲存於電容器中之電瞬間流至玻璃管內，藉由此時之氙原子或分子之激發而發出光。於此種氙閃光燈FL中，預先儲存於電容器中之靜電能量被轉換為0.1毫秒至100毫秒之極短光脈衝，因此與如鹵素燈HL般連續點亮之光源相比，具有能夠照射極強光之特徵。即，閃光燈FL係於未達1秒之極短時間內瞬間發光之脈衝發光燈。再者，閃光燈FL之發光時間可以藉由對閃光燈FL進行電力供給之燈電源之線圈常數來調整。The xenon flash lamp FL is provided with: a cylindrical glass tube (discharge tube) in which xenon gas is enclosed and an anode and a cathode connected to a capacitor are arranged at both ends; and a trigger electrode attached to the outer peripheral surface of the glass tube superior. Since xenon gas is an electrical insulator, even if electric charge is stored in the capacitor, no current will flow through the glass tube under normal conditions. However, when a high voltage is applied to the trigger electrode to break the insulation, the electricity stored in the capacitor flows instantaneously into the glass tube, and light is emitted by the excitation of xenon atoms or molecules at this time. In this xenon flash lamp FL, the electrostatic energy stored in the capacitor in advance is converted into extremely short light pulses of 0.1 millisecond to 100 milliseconds, so compared with a light source that is continuously lit like a halogen lamp HL, it has the ability to irradiate extremely strong. characteristics of light. That is, the flash lamp FL is a pulsed light-emitting lamp that emits light instantaneously in an extremely short period of less than 1 second. Furthermore, the light-emitting time of the flash lamp FL can be adjusted by the coil constant of the lamp power supply that supplies power to the flash lamp FL.
又，反射器52以覆蓋複數個閃光燈FL全體之方式設置於其等之上方。反射器52之基本功能係將從複數個閃光燈FL出射之閃光向熱處理空間65側反射。反射器52由鋁合金板形成，其正面(面向閃光燈FL一側之面)藉由噴砂處理實施了表面粗糙化加工。In addition, the
設置於腔室6下方之鹵素加熱部4係於殼體41內側內置有複數根(於本實施方式中為40根)鹵素燈HL。鹵素加熱部4係光照射部，其藉由複數個鹵素燈HL從腔室6下方經由下側腔室窗64對熱處理空間65進行光照射而加熱半導體晶圓W。The
圖7係表示複數個鹵素燈HL之配置之俯視圖。40根鹵素燈HL分成上下兩層配置。於距保持部7較近之上層配設有20根鹵素燈HL，並且於與上層相比距保持部7較遠之下層亦配設有20根鹵素燈HL。各鹵素燈HL係具有長條之圓筒形狀之棒狀燈。上層、下層均為，20根鹵素燈HL以各者之長度方向沿著保持於保持部7之半導體晶圓W之主面(亦即沿著水平方向)相互平行之方式排列。因此，上層、下層均為，藉由鹵素燈HL之排列而形成之平面為水平面。FIG. 7 is a plan view showing an arrangement of a plurality of halogen lamps HL. 40 halogen lamps HL are divided into upper and lower layers. Twenty halogen lamps HL are arranged on the upper layer closer to the holding
又，如圖7所示，上層、下層均為，相較於與保持於保持部7之半導體晶圓W之中央部對向之區域，與周緣部對向之區域中之鹵素燈HL之配設密度更高。即，上層及下層均為，相較於燈排列之中央部，周緣部處之鹵素燈HL之配設間距更短。因此，可對在藉由來自鹵素加熱部4之光照射進行加熱時容易發生溫度下降之半導體晶圓W之周緣部，照射更多光量。Also, as shown in FIG. 7 , the upper layer and the lower layer are matched to the halogen lamps HL in the region facing the peripheral portion, as compared with the region facing the center portion of the semiconductor wafer W held in the holding
又，包含上層之鹵素燈HL之燈群及包含下層之鹵素燈HL之燈群以呈格子狀交叉之方式排列。即，以配置於上層之20根鹵素燈HL之長度方向與配置於下層之20根鹵素燈HL之長度方向相互正交之方式，配設有共計40根鹵素燈HL。Moreover, the lamp group including the halogen lamp HL of the upper layer and the lamp group including the halogen lamp HL of the lower layer are arranged so as to cross in a lattice shape. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal direction of the 20 halogen lamps HL arranged in the upper layer and the longitudinal direction of the 20 halogen lamps HL arranged in the lower layer are orthogonal to each other.
鹵素燈HL係藉由對配設於圓筒形狀之玻璃管內部之燈絲通電而使燈絲白熾化從而發光之燈絲方式之光源。於玻璃管之內部，封入有於氮氣或氬氣等惰性氣體中導入微量鹵素元素(碘、溴等)而成之氣體。藉由導入鹵素元素，能夠抑制燈絲之折損並且將燈絲之溫度設定為高溫。因此，鹵素燈HL與通常之白熾燈泡相比，具有壽命較長且能夠連續地照射強光之特性。即，鹵素燈HL係連續地發光至少1秒以上之連續照明燈。又，因鹵素燈HL為棒狀燈，故壽命較長，藉由使鹵素燈HL沿水平方向配置，而向上方之半導體晶圓W之放射效率優異。The halogen lamp HL is a light source of a filament type that emits light by turning the filament incandescent by energizing a filament arranged inside a cylindrical glass tube. Inside the glass tube, a gas obtained by introducing a trace amount of halogen elements (iodine, bromine, etc.) into an inert gas such as nitrogen or argon is enclosed. By introducing the halogen element, the breakage of the filament can be suppressed and the temperature of the filament can be set to a high temperature. Therefore, the halogen lamp HL has the characteristics of being able to continuously irradiate strong light with a longer life than a normal incandescent light bulb. That is, the halogen lamp HL is a continuous lighting lamp which continuously emits light for at least 1 second. Moreover, since the halogen lamp HL is a rod-shaped lamp, the lifetime is long, and by arranging the halogen lamp HL in the horizontal direction, the radiation efficiency to the semiconductor wafer W upward is excellent.
又，於鹵素加熱部4之殼體41內，亦於兩層鹵素燈HL之下側設置有反射器43(圖1)。反射器43將從複數個鹵素燈HL出射之光向熱處理空間65側反射。Moreover, in the
控制部3對設置於熱處理裝置1中之上述各種動作機構進行控制。作為控制部3之硬體之構成與一般之電腦相同。即，控制部3具備：CPU(Central Processing Unit，中央處理單元)，其係進行各種運算處理之電路；ROM(Read Only Memory，唯讀記憶體)，其係記憶基本程式之讀出專用記憶體；RAM(Random Access Memory，隨機存取記憶體)，其係記憶各種資訊之自由讀寫之記憶體；及磁碟，其記憶有控制用軟體或資料等。控制部3之CPU執行特定之處理程式，藉此進行熱處理裝置1中之處理。The
除上述構成以外，熱處理裝置1亦具備各種冷卻用構造，以防止於半導體晶圓W之熱處理時因鹵素燈HL及閃光燈FL產生之熱能而導致鹵素加熱部4、閃光加熱部5及腔室6之過度之溫度上升。例如，於腔室6之壁體設置有水冷管(省略圖示)。又，鹵素加熱部4及閃光加熱部5係於內部形成氣流而排熱之空氣冷卻構造。又，對上側腔室窗63與燈光放射窗53之間隙亦供給空氣，使閃光加熱部5及上側腔室窗63冷卻。In addition to the above configuration, the heat treatment apparatus 1 is also provided with various cooling structures to prevent the
其次，對熱處理裝置1中之半導體晶圓W之處理順序進行說明。圖8係表示熱處理裝置1中之半導體晶圓W之處理順序之流程圖。此處，成為處理對象之半導體晶圓W係藉由離子注入法添加有雜質(離子)之半導體基板。該雜質之活化係藉由利用熱處理裝置1進行之閃光照射加熱處理(退火)而執行。以下所說明之熱處理裝置1之處理順序係藉由控制部3控制熱處理裝置1之各動作機構而進行。Next, the processing procedure of the semiconductor wafer W in the thermal processing apparatus 1 will be described. FIG. 8 is a flowchart showing the processing sequence of the semiconductor wafer W in the thermal processing apparatus 1 . Here, the semiconductor wafer W to be processed is a semiconductor substrate to which impurities (ions) are added by an ion implantation method. Activation of the impurity is performed by flash irradiation heat treatment (annealing) using the heat treatment apparatus 1 . The processing procedure of the heat treatment apparatus 1 described below is performed by the
首先，打開用於供氣之閥84，並且打開排氣用之閥89、192，而開始對於腔室6內之供氣及排氣。打開閥84後，從處理氣體供給源85向氣密漲圈90輸送作為處理氣體之氮氣，通過氣密漲圈90之內部空間之氮氣從氣體噴出口81噴出至熱處理空間65。又，打開閥89後，腔室6內之氣體從氣體排氣孔86排出。藉此，從腔室6內之熱處理空間65之上部供給之氮氣流向下方，從熱處理空間65之下部排出。First, the
又，藉由打開閥192，腔室6內之氣體亦從搬送開口部66排出。進而，藉由省略圖示之排氣機構，移載機構10之驅動部周邊之氣體亦被排出。Moreover, by opening the
繼而，打開閘閥185而將搬送開口部66打開，藉由裝置外部之搬送機器人，經由搬送開口部66將注入離子後之半導體晶圓W搬入腔室6內之熱處理空間65(步驟S1)。此時，有伴隨半導體晶圓W之搬入而夾帶裝置外部之環境氣體之虞，但因向腔室6中持續供給氮氣，故氮氣從搬送開口部66流出，可將此種外部環境氣體之夾帶抑制到最低限度。Next, the
藉由搬送機器人搬入之半導體晶圓W進入至保持部7之正上方位置後停止。然後，移載機構10之一對移載臂11從退避位置水平移動至移載動作位置並上升，藉此頂起銷12通過貫通孔79從晶座74之保持板75之上表面突出，接收半導體晶圓W。此時，頂起銷12上升至較基板支持銷77之上端更靠上方。The semiconductor wafer W carried in by the transfer robot enters the position just above the holding
將半導體晶圓W載置於頂起銷12之後，搬送機器人從熱處理空間65退出，藉由閘閥185將搬送開口部66閉鎖。然後，藉由使一對移載臂11下降，半導體晶圓W從移載機構10被交付至保持部7之晶座74，以水平姿勢從下方被保持。半導體晶圓W由豎立設置於保持板75上之複數個基板支持銷77支持，而保持於晶座74。又，半導體晶圓W以進行圖案形成且注入有雜質之正面作為上表面保持於保持部7。於由複數個基板支持銷77支持之半導體晶圓W之背面(與正面為相反側之主面)與保持板75之保持面75a之間形成特定之間隔。下降至晶座74下方之一對移載臂11藉由水平移動機構13退避至退避位置、即凹部62之內側。After the semiconductor wafer W is placed on the lift pins 12 , the transfer robot is withdrawn from the
圖9係表示半導體晶圓W之表面溫度變化之圖。於半導體晶圓W藉由以石英形成之保持部7之晶座74而以水平姿勢從下方被保持後之時刻t1，將鹵素加熱部4之40根鹵素燈HL同時點亮而開始預加熱(輔助加熱)(步驟S2)。從鹵素燈HL出射之鹵素光透過由石英形成之下側腔室窗64及晶座74而照射至半導體晶圓W之下表面。藉由接受來自鹵素燈HL之光照射，而半導體晶圓W被預加熱從而溫度上升。再者，移載機構10之移載臂11退避至凹部62之內側，故而不會妨礙利用鹵素燈HL進行之加熱。FIG. 9 is a graph showing changes in the surface temperature of the semiconductor wafer W. As shown in FIG. At time t1 after the semiconductor wafer W is held in a horizontal position from below by the
於利用鹵素燈HL進行預加熱時，藉由輻射溫度計20測定半導體晶圓W之溫度。即，從保持於晶座74之半導體晶圓W之下表面經由開口部78放射之紅外光通過透明窗21後由輻射溫度計20接收，從而測定升溫中之晶圓溫度。將測得之半導體晶圓W之溫度傳達至控制部3。控制部3一面監視藉由來自鹵素燈HL之光照射而升溫之半導體晶圓W之溫度是否達到特定之預加熱溫度T1，一面控制鹵素燈HL之輸出。即，控制部3基於輻射溫度計20之測定值，對鹵素燈HL之輸出進行反饋控制以使半導體晶圓W之溫度成為預加熱溫度T1。預加熱溫度T1被設為無需擔憂添加至半導體晶圓W中之雜質會因熱擴散之200℃至800℃左右，較佳為350℃至600℃左右(於本實施方式中為600℃)。During preheating with the halogen lamp HL, the temperature of the semiconductor wafer W is measured by the
於半導體晶圓W之溫度達到預加熱溫度T1後，控制部3將半導體晶圓W暫時維持在該預加熱溫度T1。具體而言，於由輻射溫度計20測得之半導體晶圓W之溫度達到預加熱溫度T1之時刻t2，控制部3調整鹵素燈HL之輸出，將半導體晶圓W之溫度大致維持在預加熱溫度T1。After the temperature of the semiconductor wafer W reaches the preheating temperature T1, the
藉由進行此種利用鹵素燈HL進行之預加熱，使半導體晶圓W整體均勻地升溫至預加熱溫度T1。於利用鹵素燈HL進行之預加熱階段中，存在更容易產生散熱之半導體晶圓W之周緣部之溫度與中央部相比下降之傾向，但鹵素加熱部4中之鹵素燈HL之配設密度係相較於與基板W之中央部對向之區域，與周緣部對向之區域更高。因此，照射至易產生散熱之半導體晶圓W之周緣部之光量較多，可使預加熱階段中之半導體晶圓W之面內溫度分佈均勻。By performing such preheating by the halogen lamp HL, the entire semiconductor wafer W is uniformly heated up to the preheating temperature T1. In the preheating stage by the halogen lamp HL, the temperature of the peripheral portion of the semiconductor wafer W, where heat dissipation is more likely to occur, tends to decrease compared to the central portion, but the arrangement density of the halogen lamps HL in the
於半導體晶圓W之溫度達到預加熱溫度T1後經過特定時間之時刻t3，閃光加熱部5之閃光燈FL對保持於晶座74之半導體晶圓W之正面進行閃光照射(步驟S3)。此時，從閃光燈FL放射之閃光之一部分直接射向腔室6內，另一部分暫時被反射器52反射之後射向腔室6內，藉由該等閃光之照射進行半導體晶圓W之閃光加熱。At time t3 when the temperature of the semiconductor wafer W reaches the preheating temperature T1, the flash lamp FL of the flash heating unit 5 flashes the front surface of the semiconductor wafer W held on the susceptor 74 (step S3). At this time, a part of the flash light emitted from the flash lamp FL is directly radiated into the
閃光加熱係藉由來自閃光燈FL之閃光(flashing light)照射而進行，因此可使半導體晶圓W之正面溫度於短時間內上升。即，從閃光燈FL照射之閃光係預先儲存於電容器中之靜電能量被轉換為極短之光脈衝、且照射時間為約0.1毫秒以上100毫秒以下之極短且強烈之閃光。並且，藉由來自閃光燈FL之閃光照射而被閃光加熱之半導體晶圓W之正面溫度瞬間上升至1000℃以上之處理溫度T2，且於注入至半導體晶圓W之雜質被活化之後，正面溫度快速下降。如此，於熱處理裝置1中，可使半導體晶圓W之正面溫度於極短時間內升降，故可一面抑制注入至半導體晶圓W中之雜質因熱擴散，一面進行雜質之活化。再者，雜質之活化所需之時間與其熱擴散所需之時間相比極短，故即便為約0.1毫秒至100毫秒之不會產生擴散之短時間，亦會完成活化。Since the flash heating is performed by the irradiation of the flashing light from the flash lamp FL, the front surface temperature of the semiconductor wafer W can be raised in a short time. That is, the flash irradiated from the flash lamp FL is an extremely short and intense flash having an irradiation time of about 0.1 milliseconds to 100 milliseconds by converting electrostatic energy previously stored in a capacitor into extremely short light pulses. In addition, the front surface temperature of the semiconductor wafer W heated by the flash light by the flash light from the flash lamp FL instantly rises to the processing temperature T2 above 1000° C., and after the impurities implanted into the semiconductor wafer W are activated, the front surface temperature is rapidly increased. decline. In this way, in the heat treatment apparatus 1, the temperature of the front surface of the semiconductor wafer W can be raised and lowered in a very short time, so that the impurity injected into the semiconductor wafer W can be inhibited from thermally diffusing, and the impurities can be activated. Furthermore, the time required for the activation of the impurity is extremely short compared to the time required for thermal diffusion, so even a short time of about 0.1 millisecond to 100 milliseconds in which diffusion does not occur, the activation is completed.
於閃光加熱處理結束後經過特定時間(例如2秒)之時刻t4，鹵素燈HL熄滅。於鹵素燈HL熄滅之同時，開始供給冷卻氣體(步驟S4)。具體而言，於鹵素燈HL熄滅之時刻t4，從處理氣體供給源85向氣密漲圈90輸送氦氣作為冷卻氣體。輸送至氣密漲圈90之氦氣從氣體噴出口81供給至腔室6內之熱處理空間65。又，亦繼續進行從氣體排氣孔86之排氣。At time t4 when a specific time (eg, 2 seconds) has elapsed after the flash heating process, the halogen lamp HL is turned off. When the halogen lamp HL is turned off, the supply of cooling gas is started (step S4). Specifically, at time t4 when the halogen lamp HL is turned off, helium gas is fed from the processing
氦氣具有較高之熱導率(0℃下約0.144 W/m·K)。因此，氦氣具有較高之冷卻能力。於鹵素燈HL熄滅之同時，向腔室6內供給氦氣，藉此剛進行閃光加熱後之相對高溫之半導體晶圓W被快速冷卻而迅速降溫。Helium has high thermal conductivity (about 0.144 W/m·K at 0°C). Therefore, helium has a higher cooling capacity. When the halogen lamp HL is turned off, helium gas is supplied into the
又，雖然腔室6之壁體藉由水冷管而冷卻，但並未充分地冷卻至與該壁體分開之氣密漲圈90之內壁面。因此，氣密漲圈90之內壁面容易因來自鹵素燈HL及閃光燈FL之光照射而變成高溫，有時會因源自升溫之半導體晶圓W之膜之反應產物而變色。於本實施方式中，於閃光加熱後將具有較高冷卻能力之氦氣供給至腔室6內，故不僅半導體晶圓W，包括氣密漲圈90在內之腔室6之構成零件亦快速冷卻。藉此，亦能防止氣密漲圈90之變色。Also, although the wall of the
藉由溫度感測器29測定腔室6內之環境氣體溫度。繼續供給氦氣，直至溫度感測器29測得之腔室6內之環境氣體溫度降溫至特定溫度(例如，200℃～250℃)(步驟S5)。並且，於溫度感測器29測得之腔室6內之環境氣體溫度降溫至特定溫度之時刻t5，從步驟S5前進至步驟S6，停止供給冷卻氣體。The ambient gas temperature in the
於停止供給冷卻氣體後，將腔室6內減壓(步驟S7)。具體而言，關閉閥84而停止對腔室6之氣體供給，並且僅執行從腔室6之排氣而將腔室6內減壓。藉由將腔室6內減壓，而將用於冷卻之氦氣從腔室6排出。After the supply of the cooling gas is stopped, the inside of the
於將腔室6內減壓至特定壓力(例如，約100 Pa)後，向腔室6內供給氮氣以將腔室6內復壓至大氣壓(步驟S8)。此時，再次打開閥84而從處理氣體供給源85輸送氮氣，從氣體噴出口81向腔室6內供給氮氣。藉此，腔室6內再次成為氮氣氛圍。After depressurizing the
其次，將冷卻後之半導體晶圓W從腔室6搬出(步驟S9)。使腔室6內成為氮氣氛圍並復壓後，移載機構10之一對移載臂11再次從退避位置水平移動至移載動作位置並上升，藉此頂起銷12從晶座74之上表面突出，而從晶座74接收冷卻後之半導體晶圓W。繼而，將藉由閘閥185閉鎖之搬送開口部66打開，藉由裝置外部之搬送機器人將載置於頂起銷12上之半導體晶圓W搬出，熱處理裝置1中之半導體晶圓W之處理完成。Next, the cooled semiconductor wafer W is carried out from the chamber 6 (step S9). After the inside of the
本實施方式中，於閃光加熱處理結束後，將具有較高冷卻能力之氦氣作為冷卻氣體供給至腔室6內。藉此，可高效迅速地使包含半導體晶圓W及氣密漲圈90之腔室6內冷卻。藉由使閃光加熱後之半導體晶圓W迅速冷卻，而與自然冷卻相比可縮短半導體晶圓W之冷卻時間，從而可提高產能。又，藉由使氣密漲圈90高效率地冷卻，能防止氣密漲圈90變色。In the present embodiment, after the flash heating treatment is completed, helium gas having a relatively high cooling capacity is supplied into the
又，本實施方式中，於腔室6內之環境氣體溫度降溫至特定溫度時，停止供給冷卻氣體。若長時間持續供給冷卻氣體，則會使腔室6之構成零件過度冷卻。這樣一來，當進行後續之新的半導體晶圓W之處理時，半導體晶圓W會由被過度冷卻之晶座74保持，而產生複數片半導體晶圓W之溫度歷程變得不均一之問題。因此，為了不使腔室6內過度冷卻，於腔室6內之環境氣體溫度降溫至特定溫度時，停止供給冷卻氣體。In addition, in this embodiment, when the temperature of the ambient gas in the
以上，對本發明之實施方式進行了說明，但本發明只要不脫離其主旨，則除了上述內容以外，能夠進行各種變更。例如，於上述實施方式中，使用氦氣作為冷卻氣體，但並不限定於此，冷卻氣體只要為具有較氮氣高之熱導率之氣體即可。即，氮氣之熱導率為0℃下約0.024 W/m·K，亦可將具有更高熱導率之氣體作為冷卻氣體供給至腔室6內。作為氦氣以外之具有較氮氣高之熱導率之氣體，例如可例示氫氣(0℃下約0.168 W/m·K)。於閃光加熱處理結束後向腔室6內供給氫氣作為冷卻氣體，亦可獲得與上述實施方式相同之效果。As mentioned above, although embodiment of this invention was described, unless this invention deviates from the summary, various changes other than the content mentioned above are possible. For example, in the above-described embodiment, helium gas is used as the cooling gas, but it is not limited to this, and the cooling gas may be a gas having higher thermal conductivity than nitrogen gas. That is, the thermal conductivity of nitrogen gas is about 0.024 W/m·K at 0° C., and a gas having a higher thermal conductivity can also be supplied into the
又，於上述實施方式中，於鹵素燈HL熄滅之同時，開始供給冷卻氣體，但冷卻氣體之供給時點並不限定於此，只要為從閃光燈FL照射閃光之時間點以後(時刻t3以後)即可。因此，例如，亦可於閃光燈FL發光之同時，開始供給冷卻氣體。但，照射閃光後之特定時間(時刻t3至時刻t4之期間)內鹵素燈HL為點亮狀態，即便於閃光燈FL發光之同時開始供給冷卻氣體，亦會變成利用鹵素燈HL進行之加熱與利用冷卻氣體進行之冷卻同時進行，而效率低下。因此，如上述實施方式，於鹵素燈HL熄滅之同時開始供給冷卻氣體更能高效率地使腔室6內冷卻。又，禁止於照射閃光之前供給冷卻氣體。其原因在於，若於照射閃光之前供給冷卻氣體，則會產生於照射閃光時半導體晶圓W之溫度較預加熱溫度T1降低之擔憂。In the above-described embodiment, the supply of the cooling gas is started at the same time as the halogen lamp HL is turned off, but the supply timing of the cooling gas is not limited to this, as long as it is after the time when the flash lamp FL radiates the flash (after the time t3) Can. Therefore, for example, the supply of the cooling gas may be started at the same time that the flash lamp FL emits light. However, the halogen lamp HL is turned on for a certain time after the flash is irradiated (the period from time t3 to time t4), and even if the supply of cooling gas starts at the same time as the flash lamp FL emits light, the heating and utilization of the halogen lamp HL will be performed. The cooling by the cooling gas is performed at the same time, and the efficiency is low. Therefore, as in the above-described embodiment, it is possible to more efficiently cool the inside of the
又，亦可藉由控制來自氣密漲圈90之冷卻氣體之供給流量及從氣體排氣孔86之排氣壓，而提高腔室6內之冷卻氣體之流速。可使冷卻氣體之供給流量為最大150公升/分鐘。藉由提高腔室6內之冷卻氣體之流速，可提高腔室6內之冷卻效率。In addition, the flow rate of the cooling gas in the
又，於上述實施方式中，使閃光加熱部5具備30根閃光燈FL，但並不限定於此，可使閃光燈FL之根數為任意數量。又，閃光燈FL並不限定於氙閃光燈，亦可為氪閃光燈。又，鹵素加熱部4所具備之鹵素燈HL之根數亦不限定於40根，可設為任意數量。In addition, in the above-described embodiment, the flash heating unit 5 is provided with 30 flash lamps FL, but the present invention is not limited to this, and the number of flash lamps FL may be any number. In addition, the flash lamp FL is not limited to a xenon flash lamp, and may be a krypton flash lamp. In addition, the number of halogen lamps HL with which the
又，於上述實施方式中，使用燈絲方式之鹵素燈HL作為連續地發光1秒以上之連續照明燈進行半導體晶圓W之預加熱，但並不限定於此，亦可代替鹵素燈HL使用放電型弧光燈(例如，氙弧燈)作為連續照明燈而進行預加熱。In the above-described embodiment, the preheating of the semiconductor wafer W is performed using the halogen lamp HL of the filament type as the continuous lighting lamp that continuously emits light for 1 second or more, but the present invention is not limited to this, and a discharge may be used instead of the halogen lamp HL. Type arc lamps (eg, xenon arc lamps) are preheated as continuous lighting.
又，成為熱處理裝置1之處理對象之基板並不限定於半導體晶圓，亦可為用於液晶顯示裝置等平板顯示器之玻璃基板或太陽電池用基板。In addition, the substrate to be processed by the heat treatment apparatus 1 is not limited to a semiconductor wafer, and may be a glass substrate or a solar cell substrate used for a flat panel display such as a liquid crystal display device.
1:熱處理裝置
3:控制部
4:鹵素加熱部
5:閃光加熱部
6:腔室
7:保持部
10:移載機構
11:移載臂
12:頂起銷
13:水平移動機構
14:升降機構
20:輻射溫度計
21:透明窗
29:溫度感測器
41:殼體
43:反射器
51:殼體
52:反射器
53:燈光放射窗
61:腔室側部
61a:貫通孔
62:凹部
63:上側腔室窗
64:下側腔室窗
65:熱處理空間
66:搬送開口部(爐口)
69:反射環
71:基台環
72:連結部
74:晶座
75:保持板
75a:保持面
76:導引環
77:基板支持銷
78:開口部
79:貫通孔
81:氣體噴出口
83:氣體供給管
84:閥
85:處理氣體供給源
86:氣體排氣孔
87:緩衝空間
88:氣體排氣管
89:閥
90:氣密漲圈
185:閘閥
190:排氣部
191:氣體排氣管
192:閥
FL:閃光燈
HL:鹵素燈
T1:預加熱溫度
T2:處理溫度
t1:時刻
t2:時刻
t3:時刻
t4:時刻
t5:時刻
W:半導體晶圓1: Heat treatment device
3: Control Department
4: Halogen heating part
5: Flash heating part
6: Chamber
7: Keeping Department
10: Transfer mechanism
11: Transfer arm
12: Jack up pins
13: Horizontal movement mechanism
14: Lifting mechanism
20: Radiation Thermometer
21: Transparent window
29: Temperature sensor
41: Shell
43: Reflector
51: Shell
52: Reflector
53: Light emission window
61:
圖1係表示本發明之熱處理裝置之構成之縱剖視圖。 圖2係表示保持部之整體外觀之立體圖。 圖3係晶座之俯視圖。 圖4係晶座之剖視圖。 圖5係移載機構之俯視圖。 圖6係移載機構之側視圖。 圖7係表示複數個鹵素燈之配置之俯視圖。 圖8係表示圖1之熱處理裝置中之半導體晶圓之處理順序之流程圖。 圖9係表示半導體晶圓之表面溫度變化之圖。Fig. 1 is a longitudinal sectional view showing the structure of the heat treatment apparatus of the present invention. FIG. 2 is a perspective view showing the overall appearance of the holding portion. FIG. 3 is a top view of the susceptor. FIG. 4 is a cross-sectional view of the susceptor. FIG. 5 is a top view of the transfer mechanism. Figure 6 is a side view of the transfer mechanism. FIG. 7 is a plan view showing an arrangement of a plurality of halogen lamps. FIG. 8 is a flow chart showing the processing sequence of the semiconductor wafer in the thermal processing apparatus of FIG. 1 . FIG. 9 is a graph showing changes in the surface temperature of a semiconductor wafer.
T1:預加熱溫度 T1: Preheating temperature
T2:處理溫度 T2: Processing temperature
t1:時刻 t1: time
t2:時刻 t2: time
t3:時刻 t3: time
t4:時刻 t4: time
t5:時刻 t5: time
Claims (8)
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05275433A (en) * | 1992-03-27 | 1993-10-22 | Rohm Co Ltd | Manufacture of semiconductor device |
| JP2003045817A (en) * | 2001-07-27 | 2003-02-14 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus for substrate |
| JP2010114207A (en) * | 2008-11-05 | 2010-05-20 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus |
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| JP4481528B2 (en) | 2001-06-22 | 2010-06-16 | 株式会社東芝 | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| KR100439276B1 (en) | 2003-11-24 | 2004-07-30 | 코닉 시스템 주식회사 | Rapid thermal process apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05275433A (en) * | 1992-03-27 | 1993-10-22 | Rohm Co Ltd | Manufacture of semiconductor device |
| JP2003045817A (en) * | 2001-07-27 | 2003-02-14 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus for substrate |
| JP2010114207A (en) * | 2008-11-05 | 2010-05-20 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus |
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