TWI755618B - Light-emitting device with light scatter tuning to control color shift - Google Patents

Light-emitting device with light scatter tuning to control color shift Download PDF

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TWI755618B
TWI755618B TW108127093A TW108127093A TWI755618B TW I755618 B TWI755618 B TW I755618B TW 108127093 A TW108127093 A TW 108127093A TW 108127093 A TW108127093 A TW 108127093A TW I755618 B TWI755618 B TW I755618B
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light
emitting device
light emitting
phosphor material
color temperature
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TW202021155A (en
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丹尼爾 亞斯特拉
瑪賽爾 林內 波莫
賈克伯斯 喬翰尼斯 法蘭西斯克斯 傑拉得斯 修斯
健太郎 清水
麥可 大衛 坎拉斯
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美商亮銳公司
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
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    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

A system and methods for light-emitting diode (LED) devices with a dimming feature that can tailor a color point shift in the light color temperature of a scattering/transparent layer to enlarge a dim to warm range are disclosed herein. A light-emitting device may include a wavelength converting structure configured to receive light from a light emitting semiconductor structure and an adjacent light scattering structure. The light scattering structure may comprise a plurality of scattering particles with a lower refractive index (RI) than the RI of the matrix material in which the scattering particles are disposed. The wavelength converting structure may include a red phosphor and a green phosphor such that to adjust overlap between green emission and absorption by the red phosphor to correspondingly adjust scattering and magnitude of color shift. In an embodiment, the light scattering structure may be integrated in the wavelength converting structure.

Description

具有光散射調諧之發光器件以控制色彩偏移Light-emitting devices with light scattering tuning to control color shift

本發明大體上係關於發光照明器件，且更特定而言，本發明係關於用於具有可使用一散射/透明層或結構來調適一色點偏移及色溫變化以提供一調光效應且擴大調光範圍之一調光特徵之發光二極體(LED)的系統及方法。The present invention generally relates to light emitting lighting devices, and more particularly, the present invention relates to devices having a color point shift and color temperature change that can be adjusted using a scattering/transparent layer or structure to provide a dimming effect and amplify the dimming effect. Systems and methods for light emitting diodes (LEDs) with a dimming feature for a range of light.

發光二極體(LED)用作各種應用之光源。例如，LED可用作各種應用之白光源，諸如蜂巢式電話攝影機之閃光源及白熾燈。此等LED在本文中可指稱白色LED或顯白LED。當白色LED處於一接通狀態中時，自觀看者之角度看，LED可似乎發射白光。在一些情況中，白色LED可由發射非白光之發光半導體結構及使非白光向觀看者呈現白色之波長轉換結構組成。例如，一白色LED可由一發黃光磷光體層(即，波長轉換結構)覆蓋之一發藍光半導體結構形成，且可指稱一磷光體轉換LED (pc-LED)。由發光半導體結構發射之藍光之光子可穿過發黃光磷光體層作為藍光子或可由發黃光磷光體層轉換成黃光子。最終自LED發出之藍及黃光子組合以使自LED發射之光向觀看者呈現白色。Light emitting diodes (LEDs) are used as light sources for various applications. For example, LEDs can be used as white light sources for various applications, such as flash sources for cellular telephone cameras and incandescent lamps. Such LEDs may be referred to herein as white LEDs or white LEDs. When a white LED is in an on state, from the perspective of a viewer, the LED may appear to emit white light. In some cases, white LEDs may consist of light emitting semiconductor structures that emit non-white light and wavelength converting structures that render the non-white light white to a viewer. For example, a white LED may be formed by a yellow-emitting phosphor layer (ie, wavelength converting structure) covering a blue-emitting semiconductor structure, and may be referred to as a phosphor-converted LED (pc-LED). The photons of blue light emitted by the light emitting semiconductor structure can pass through the yellow emitting phosphor layer as blue photons or can be converted into yellow photons by the yellow emitting phosphor layer. Eventually the blue and yellow photons emitted from the LED combine to make the light emitted from the LED appear white to the viewer.

本發明揭示用於具有可使用一散射/透明層或結構來調適一色點偏移及色溫變化以提供一調光效應且擴大調光範圍之一調光特徵之發光二極體(LED)器件的一系統及方法。一種發光器件可包含經組態以在一接通狀態中發射一光之一發光半導體結構。該發光器件可進一步包含一波長轉換結構，其具有相鄰於該發光半導體結構之一第一表面及與該第一表面對置之一第二表面，該波長轉換結構經組態以接收由該發光半導體結構發射之該光及自一光散射結構反射之光。該光散射結構可相鄰於該波長轉換材料之該第二表面，且可包括安置於具有一第一折射率(RI)之一第一基質材料中之複數個散射粒子。替代地，該光散射可包含於該波長轉換結構中。該複數個散射粒子之各者可包括具有低於該第一RI之一第二RI的一材料。該波長轉換結構可至少包括安置於一第二基質材料中之一第一類型之磷光體之複數個第一磷光體粒子及一第二類型之磷光體之複數個第二磷光體粒子。該第一類型之磷光體可吸收光之一第一光譜且發射該光之一第二光譜。該第二類型之磷光體可發射光之該第二光譜，使得該第一類型之磷光體之一激發(或吸收)光譜與該第二類型之磷光體之一發射光譜重疊，其中一較大重疊導致依據溫度及驅動電流而變化之自該發光器件發射之該光之一較大色點偏移。The present invention discloses a light emitting diode (LED) device having a dimming feature that can use a scattering/transparent layer or structure to accommodate a color point shift and color temperature change to provide a dimming effect and expand the dimming range A system and method. A light emitting device may include a light emitting semiconductor structure configured to emit a light in an on state. The light emitting device may further include a wavelength conversion structure having a first surface adjacent to the light emitting semiconductor structure and a second surface opposite the first surface, the wavelength conversion structure configured to receive the light from the light emitting semiconductor structure The light emitted by the light emitting semiconductor structure and the light reflected from a light scattering structure. The light scattering structure can be adjacent to the second surface of the wavelength converting material, and can include a plurality of scattering particles disposed in a first matrix material having a first refractive index (RI). Alternatively, the light scattering may be included in the wavelength converting structure. Each of the plurality of scattering particles may comprise a material having a second RI lower than the first RI. The wavelength converting structure may include at least a plurality of first phosphor particles of a first type of phosphor and a plurality of second phosphor particles of a second type of phosphor disposed in a second host material. The phosphor of the first type can absorb a first spectrum of light and emit a second spectrum of light. The second type of phosphor can emit the second spectrum of light such that an excitation (or absorption) spectrum of the first type of phosphor overlaps an emission spectrum of the second type of phosphor, with a larger one Overlap results in a larger color point shift of the light emitted from the light emitting device as a function of temperature and drive current.

相關申請案之交叉參考 本申請案主張2018年10月16日申請之歐洲專利申請案第18200747.6號及2018年7月30日申請之美國專利申請案第16/048,436號之優先權權利，該等案之各者之全文以引用的方式併入本文中。Cross-references to related applications This application claims priority rights from European Patent Application No. 18200747.6, filed on October 16, 2018, and US Patent Application No. 16/048,436, filed on July 30, 2018, the full text of each of these applications Incorporated herein by reference.

添加一調光效應至一LED (諸如一顯白LED)容許由LED發射之光之強度或色彩逐漸變動或偏移。一傳統調光器可變動施加至一標準LED之電壓或電流以調整自LED發射之光之光強度，但無法影響色溫。日光及來自白熾燈之光調至較暖色，其使使用者感到自然及舒適。若以低電流驅動LED，則用於白色LED (諸如白色pc-LED)之調光之典型機構無法導致一較暖色(即，較低相關色溫(CCT))。可使用包括多個CCT LED (例如板上晶片(COB) LED)之一光模組中之一部分較暖白色LED來達成將LED光調至較暖色，但此使驅動電子器件及光分佈變複雜且增加成本。因此，期望得到具有可調變色溫以朝向較暖色調光之一被動層或結構的一LED。Adding a dimming effect to an LED, such as a white LED, allows for a gradual change or shift in the intensity or color of the light emitted by the LED. A conventional dimmer can vary the voltage or current applied to a standard LED to adjust the light intensity of the light emitted from the LED, but cannot affect the color temperature. Daylight and light from incandescent lamps are adjusted to warmer colors, which make the user feel natural and comfortable. Typical mechanisms for dimming of white LEDs (such as white pc-LEDs) cannot result in a warmer color (ie, lower correlated color temperature (CCT)) if the LEDs are driven at low currents. Dimming the LED light to a warmer color can be achieved using a portion of the warmer white LEDs in a light module that includes multiple CCT LEDs, such as chip-on-board (COB) LEDs, but this complicates the drive electronics and light distribution and increase costs. Therefore, it would be desirable to have an LED with a passive layer or structure that can tune the color change temperature toward a warmer hue.

本文揭示LED結構，其使用一波長轉換結構中之不同磷光體之組合來控制依據一相鄰散射結構或整合結構中之光散射變化而變化之色彩偏移以藉由將光色溫自一冷白色變動至一暖白色來對自LED結構發射之光提供依據LED溫度及驅動電流而變化之一調暖效應。例如，當自LED結構發射之光係白光時，所揭示之LED結構可對光提供將光色溫自高驅動電流處之冷白色(例如約3000 K或更大之相關色溫(CCT))變動至較低驅動電流處之暖白色(例如約2000 K之CCT)的一調光效應。儘管本文中所描述之實例可參考產生白光之白色LED結構，但熟習技術者應瞭解，本文中所揭示之實施例可類似用於對產生光譜中之任何其他色彩光之LED結構提供一調光效應。Disclosed herein are LED structures that use a combination of different phosphors in a wavelength converting structure to control color shifts that vary according to changes in light scattering in an adjacent scattering structure or integrated structure by shifting the color temperature of the light from a cool white The change to a warm white color provides a warming effect on the light emitted from the LED structure that varies depending on the LED temperature and drive current. For example, when the light emitted from the LED structure is white light, the disclosed LED structure can provide light that varies the color temperature of the light from cool white at high drive currents (eg, a correlated color temperature (CCT) of about 3000 K or greater) to A dimming effect of warm whites at lower drive currents (eg CCT of about 2000 K). Although the examples described herein may refer to white LED structures that produce white light, those skilled in the art will appreciate that the embodiments disclosed herein can be similarly used to provide a dimming to LED structures that produce any other color of light in the spectrum effect.

在本文所揭示之實施例中，用於波長轉換結構中之磷光體系統包含至少一紅色磷光體(其吸收綠/藍光)及一綠色磷光體(其發射綠光)，使得該等類型之磷光體可用於調整綠光發射與紅色磷光體吸收之間的重疊以對應地調整色彩偏移之散射及量值。隨著磷光體系統中之綠光發射與紅光吸收之間的重疊增加，所得色彩偏移增大。因此，最大化磷光體系統中之綠光發射與紅光吸收之間的重疊使自LED結構發射之所得白光之色彩偏移及調光範圍最大化。In the embodiments disclosed herein, the phosphor system used in the wavelength converting structure includes at least a red phosphor (which absorbs green/blue light) and a green phosphor (which emits green light) such that these types of phosphorescence Volumes can be used to adjust the overlap between green light emission and red phosphor absorption to adjust the scattering and magnitude of color shift accordingly. The resulting color shift increases as the overlap between green emission and red absorption in the phosphor system increases. Therefore, maximizing the overlap between green light emission and red light absorption in the phosphor system maximizes the color shift and dimming range of the resulting white light emitted from the LED structure.

在以下實例中，LED器件用於係指一顯白LED (除非另有指示)且可與LED、pc-LED、LED結構、LED模組、發光器件或(白)光源互換使用，使得一LED光源或任何其他類型之光源可類似用於一發光器件中。具有光散射調諧以控制色彩偏移及色溫之一發光器件之揭示實施例可用於可調光之照明型LED模組，其通常用於(例如)旅館環境或家庭應用。LED類型之實例可包含呈一板上晶片(COB)組態之中等功率LED。In the following examples, LED device is used to refer to a white LED (unless otherwise indicated) and can be used interchangeably with LED, pc-LED, LED structure, LED module, light emitting device or (white) light source such that an LED The light source or any other type of light source can similarly be used in a light emitting device. The disclosed embodiments of a light emitting device with light scattering tuning to control color shift and color temperature can be used in dimmable lighting-type LED modules, which are typically used in, for example, hotel environments or home applications. Examples of LED types may include medium power LEDs in a chip-on-board (COB) configuration.

圖1A係包含一發光半導體結構115、一波長轉換結構110及一光散射結構105之一實例性發光器件100之一圖式。光散射結構105可為一單獨結構(如圖1A中所展示)，或替代地，可併入至波長轉換結構110中。接點120及125可直接或經由諸如一基台之另一結構來耦合至發光半導體結構115以電連接至一電路板或其他基板或器件。在一實例中，可藉由可由一介電材料填充之一間隙127來使接點120及125彼此電絕緣。發光半導體結構115可為發射光102之任何發光半導體結構，可經由一波長轉換結構110及/或光散射結構105來將光102轉換成具有一不同色點之光112 (例如包括光102及光104之一組合之一顯白光)。此一發光半導體結構115之一實例可由發射藍光(例如450 nm至495 nm之波長)或紫外(UV)光(例如400 nm或更短之波長)之III族氮化物發光半導體結構(諸如由鎵、鋁、銦及氮之二元、三元及四元合金之一或多者形成之一發光半導體結構)形成。發光半導體結構之其他實例可包含由III至V族材料、III族磷化物材料、III族砷化物材料、II至VI族材料、氧化鋅(ZnO)或矽(Si)基材料之其他群組形成之發光半導體結構。FIG. 1A is a diagram of an exemplary light emitting device 100 including a light emitting semiconductor structure 115 , a wavelength converting structure 110 , and a light scattering structure 105 . The light scattering structure 105 may be a separate structure (as shown in FIG. 1A ), or alternatively, may be incorporated into the wavelength converting structure 110 . Contacts 120 and 125 may be coupled to light emitting semiconductor structure 115 directly or via another structure such as a submount for electrical connection to a circuit board or other substrate or device. In one example, contacts 120 and 125 may be electrically isolated from each other by a gap 127 that may be filled with a dielectric material. The light emitting semiconductor structure 115 can be any light emitting semiconductor structure that emits light 102, and the light 102 can be converted into light 112 having a different color point (eg, including light 102 and light) via a wavelength conversion structure 110 and/or light scattering structure 105 One of the combinations of 104 displays white light). An example of such a light-emitting semiconductor structure 115 may be a Group III-nitride light-emitting semiconductor structure (such as made of gallium) that emits blue light (eg, wavelengths of 450 nm to 495 nm) or ultraviolet (UV) light (eg, wavelengths of 400 nm or less). , one or more of binary, ternary, and quaternary alloys of aluminum, indium, and nitrogen form a light-emitting semiconductor structure). Other examples of light emitting semiconductor structures may include those formed from other groups of III-V materials, III-phosphide materials, III-arsenide materials, II-VI materials, zinc oxide (ZnO) or silicon (Si) based materials The light-emitting semiconductor structure.

例如，發光半導體結構115可由以下各者形成：III至V族半導體，其包含(但不限於) AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb；II至VI族半導體，其包含(但不限於) ZnS、ZnSe、CdSe、CdTe；IV族半導體，其包含(但不限於) Ge、Si、SiC；及其等之混合物或合金。此等實例性半導體對其中存在該等半導體之LED之典型發射波長具有自約2.4至約4.1範圍內之折射率。例如，諸如GaN之III族氮化物半導體對500 nm具有約2.4之折射率，且諸如InGaP之III族磷化物半導體對600 nm具有約3.7之折射率。接點120及125可由諸如AuSn、AuGa、AuSi或SAC焊料之一焊料形成。 For example, the light emitting semiconductor structure 115 may be formed of: Group III to V semiconductors including, but not limited to, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb; II To Group VI semiconductors, including but not limited to ZnS, ZnSe, CdSe, CdTe; Group IV semiconductors, including but not limited to Ge, Si, SiC; and mixtures or alloys thereof. These exemplary semiconductors have refractive indices ranging from about 2.4 to about 4.1 for typical emission wavelengths of LEDs in which they are present. For example, a group III nitride semiconductor such as GaN has a refractive index of about 2.4 for 500 nm, and a group III phosphide semiconductor such as InGaP has a refractive index of about 3.7 for 600 nm. Contacts 120 and 125 may be formed of a solder such as AuSn, AuGa, AuSi or SAC solder.

圖1B係可包含於圖1A之發光器件100中之一實例性發光半導體結構115之一圖式。所繪示之實例係一覆晶結構。然而，一般技術者應瞭解，本文中所描述之實施例可應用於其他類型之LED設計，諸如垂直、橫向及多接面器件。1B is a drawing of an example light emitting semiconductor structure 115 that may be included in the light emitting device 100 of FIG. 1A. The example shown is a flip-chip structure. However, those of ordinary skill will appreciate that the embodiments described herein may be applied to other types of LED designs, such as vertical, lateral, and multi-junction devices.

在圖1B所繪示之實例中，發光半導體結構115包含安置於n型導電性之一半導體層或區域(亦指稱一n型區域) 130與p型導電性之一半導體層或區域(亦指稱一p型區域) 140之間的一發光主動區域135。接點145及150安置成與發光半導體結構115之一表面接觸且藉由可由一介電材料(諸如矽之氧化物或氮化物(即，SiO2 或Si3 N4 ))填充之一間隙155來彼此電絕緣。在所繪示之實施例中，接點145 (亦指稱一p接點)與p型區域140之一表面直接接觸，且接點150 (亦指稱一n接點)與n型區域130之一表面直接接觸。儘管圖1B中未展示，但諸如安置於間隙155中之一介電材料亦可內襯於發光主動區域135及p型區域140之側壁上以使該等區域與接點150電絕緣以防止p-n接面短路。In the example shown in FIG. 1B , the light emitting semiconductor structure 115 includes a semiconductor layer or region (also referred to as an n-type region) 130 disposed between a semiconductor layer or region of n-type conductivity and a semiconductor layer or region (also referred to as an n-type region) of p-type conductivity A light-emitting active region 135 between a p-type region) 140. Contacts 145 and 150 are disposed in contact with a surface of light emitting semiconductor structure 115 and by way of a gap 155 that may be filled by a dielectric material such as an oxide or nitride of silicon (ie, SiO 2 or Si 3 N 4 ) to be electrically isolated from each other. In the illustrated embodiment, contact 145 (also referred to as a p-contact) is in direct contact with a surface of p-type region 140 , and contact 150 (also referred to as an n-contact) is in direct contact with one of n-type regions 130 surface in direct contact. Although not shown in Figure IB, a dielectric material such as disposed in gap 155 may also be lined on the sidewalls of light emitting active region 135 and p-type region 140 to electrically insulate these regions from contact 150 to prevent pn The junction is shorted.

n型區域130可生長於一生長基板上且可包含一或多個半導體材料層。此或此等層可包含不同組合物及摻雜劑濃度，其包含(例如)製備層(諸如緩衝或成核層)及/或經設計以促進生長基板移除之層。此等層可為n型或未經有意摻雜，或可甚至為p型器件層。可根據發光區域所要之特定光學、材料或電性質來設計層以高效率發射光。如同n型區域130，p型區域140可包含不同組合物、厚度及摻雜劑濃度之多個層，其包含未經有意摻雜之層或n型層。儘管層130在本文中描述為n型區域且層140在本文中描述為p型區域，但亦可在不背離本文中所描述之實施例之範疇之情況下切換n型區域及p型區域。The n-type region 130 may be grown on a growth substrate and may include one or more layers of semiconductor material. The layer(s) may comprise different compositions and dopant concentrations, including, for example, fabrication layers (such as buffer or nucleation layers) and/or layers designed to facilitate growth substrate removal. These layers may be n-type or not intentionally doped, or may even be p-type device layers. The layers can be designed to emit light with high efficiency according to the specific optical, material or electrical properties desired in the light emitting region. Like n-type region 130, p-type region 140 may include multiple layers of different compositions, thicknesses, and dopant concentrations, including layers that are not intentionally doped or n-type layers. Although layer 130 is described herein as an n-type region and layer 140 is described herein as a p-type region, the n-type and p-type regions may also be switched without departing from the scope of the embodiments described herein.

發光主動區域135可為(例如)與p區域140及n區域135之界面相關聯之一p-n二極體接面。替代地，發光主動區域135可包含經n型或p型摻雜或未摻雜之一或多個半導體層。例如，發光主動區域135可包含一單一厚或薄發光層。此包含一同質接面、單異質結構、雙異質結構或單量子井結構。替代地，發光主動區域135可為一多量子井發光區域，其可包含由障壁層分離之多量子井發光層。Light emitting active region 135 may be, for example, a p-n diode junction associated with the interface of p region 140 and n region 135 . Alternatively, the light emitting active region 135 may include one or more semiconductor layers that are n-type or p-type doped or undoped. For example, the light emitting active region 135 may comprise a single thick or thin light emitting layer. This includes a homogenous junction, a single heterostructure, a double heterostructure or a single quantum well structure. Alternatively, the light-emitting active region 135 may be a multi-quantum-well light-emitting region, which may include multi-quantum-well light-emitting layers separated by barrier layers.

p接點145可形成於p型區域140之一表面上。p接點145可包含可防止或減少反射金屬電遷移之多個導電層，諸如一反射金屬及一防護金屬。反射金屬可為銀或任何其他適合金屬，且防護金屬可為TiW或TiWN。n接點150可形成為與一區域中n型區域130之一表面接觸，在該區域中，已移除主動區域135、n型區域140及p接點145之部分以暴露n型區域130之表面之至少一部分。暴露台面或通路之側壁可由一介電質塗覆以防止短路。接點145及150可為(例如)由包含(但不限於)以下各者之金屬形成之金屬接點：金、銀、鎳、鋁、鈦、鉻、鉑、鈀、銠、錸、釕、鎢及其等之混合物或合金。在其他實例中，一或兩個接點145及150可由諸如氧化銦錫之透明導體形成。The p-contact 145 may be formed on a surface of the p-type region 140 . The p-contact 145 may include conductive layers that prevent or reduce electromigration of reflective metals, such as a reflective metal and a shielding metal. The reflective metal can be silver or any other suitable metal, and the shield metal can be TiW or TiWN. The n-contact 150 may be formed in surface contact with a surface of the n-type region 130 in an area in which the active region 135 , the n-type region 140 , and portions of the p-contact 145 have been removed to expose the n-type region 130 at least a portion of the surface. The sidewalls of the exposed mesas or vias may be coated with a dielectric to prevent short circuits. Contacts 145 and 150 may be, for example, metal contacts formed from metals including, but not limited to, gold, silver, nickel, aluminum, titanium, chromium, platinum, palladium, rhodium, rhenium, ruthenium, Tungsten and its mixtures or alloys. In other examples, one or both contacts 145 and 150 may be formed from a transparent conductor such as indium tin oxide.

n接點150及p接點145不受限於圖1B中所繪示之配置，而是可依各種不同方式配置。在實施例中，一或多個n接點通路可形成於發光半導體結構115中以形成n接點150與n型層130之間的電接觸。替代地，n接點150及p接點145可經重佈以與此項技術中已知之一介電/金屬堆疊形成接合墊。p接點145及n接點150可直接或經由諸如一基台之另一結構來分別電連接至圖1A之接點120及125。The n-contact 150 and the p-contact 145 are not limited to the configuration shown in FIG. 1B , but may be configured in a variety of different ways. In an embodiment, one or more n-contact vias may be formed in light emitting semiconductor structure 115 to form electrical contact between n-contact 150 and n-type layer 130 . Alternatively, n-contact 150 and p-contact 145 may be redistributed to form bond pads with a dielectric/metal stack known in the art. The p-contact 145 and the n-contact 150 may be electrically connected to the contacts 120 and 125 of FIG. 1A, respectively, either directly or through another structure such as a submount.

參考圖1A，波長轉換結構110可為任何發光材料，諸如一透明或半透明黏結劑或基質(諸如聚矽氧)中之磷光體或磷光體粒子或吸收一波長之光且發射一不同波長之光的一陶瓷磷光體元件。若波長轉換材料110係一陶瓷磷光體元件，則陶瓷磷光體元件可為(例如)用於產生一色彩光之一陶瓷磷光體板(諸如(若干)磷光體薄層)或用於產生不同色彩光之一陶瓷磷光體板堆疊。陶瓷磷光體板可對由發光半導體結構115發射之波長具有1.4或更大(例如1.7或更大)之一RI。在一實例中，波長轉換結構110可預形成為一波長轉換元件且使用一黏著劑或此項技術中已知之任何其他方法或材料來附接至發光半導體結構115。Referring to FIG. 1A, the wavelength converting structure 110 can be any luminescent material, such as a transparent or translucent binder or phosphor or phosphor particles in a matrix (such as polysiloxane) or absorbing one wavelength of light and emitting a different wavelength. A ceramic phosphor element for light. If wavelength converting material 110 is a ceramic phosphor element, the ceramic phosphor element may be, for example, a ceramic phosphor plate (such as phosphor thin layer(s)) for producing a color of light or for producing different colors One of the light stacks of ceramic phosphor plates. The ceramic phosphor plate may have an RI of 1.4 or greater (eg, 1.7 or greater) for the wavelengths emitted by the light emitting semiconductor structures 115 . In one example, the wavelength converting structure 110 may be pre-formed as a wavelength converting element and attached to the light emitting semiconductor structure 115 using an adhesive or any other method or material known in the art.

在一實例中，發光半導體結構115可發射藍光102。在此等實施例中，波長轉換結構110可包含(例如)一發黃光波長轉換材料(例如黃色磷光體)或發綠光及紅光波長轉換材料(例如紅色及綠色磷光體之一組合)，其將在由各自磷光體發射之光104與由發光半導體結構115發射之藍光102組合時產生白光112。在另一實例中，發光半導體結構115可發射UV光。在此等實施例中，波長轉換結構110可包含(例如)藍色及黃色波長轉換材料或藍色、綠色及紅色波長轉換材料。可添加發射其他色彩光之波長轉換材料以調適自發光器件100發射之光112之光譜。In one example, the light emitting semiconductor structure 115 may emit blue light 102 . In these embodiments, the wavelength converting structure 110 may include, for example, a yellow emitting wavelength converting material (eg, a yellow phosphor) or a green and red emitting wavelength converting material (eg, a combination of red and green phosphors) , which will produce white light 112 when the light 104 emitted by the respective phosphors is combined with the blue light 102 emitted by the light emitting semiconductor structure 115 . In another example, the light emitting semiconductor structure 115 may emit UV light. In such embodiments, the wavelength converting structure 110 may include, for example, blue and yellow wavelength converting materials or blue, green and red wavelength converting materials. Wavelength converting materials that emit light of other colors can be added to tailor the spectrum of light 112 emitted from light emitting device 100 .

波長轉換結構110可包含磷光體粒子、有機半導體、II至VI族或III至V族半導體、II至VI族或III至V族量子點或奈米晶體、染料、聚合物或發光材料(諸如氮化鎵(GaN))。可使用之磷光體之實例包含基於石榴石、正矽酸鹽、氮化矽酸鹽及氮化鋁酸鹽磷光體之組合，諸如石榴石Y3 Al5 O12 :Ce (YAG)、Lu3 Al5 O12 :Ce (LuAG)、Y3 Al5-x Gax O12 :Ce (YGaG)、正矽酸鹽(Ba1-x Srx )2 SiO4 :Eu (BOSE)及氮化矽酸鹽磷光體(諸如(Ca,Sr)AlSiN3 :Eu (ECAS或SCASN)、(Ca,Sr,Ba)2 Si5 N8 :Eu (BSSN)及Sr(LiAl3 N4 ):Eu (SLA))。 The wavelength converting structure 110 may comprise phosphor particles, organic semiconductors, II-VI or III-V semiconductors, II-VI or III-V quantum dots or nanocrystals, dyes, polymers, or luminescent materials such as nitrogen gallium nitride (GaN)). Examples of phosphors that can be used include combinations of garnet, orthosilicate , nitride silicate, and nitride aluminate phosphors, such as garnet Y3Al5O12 :Ce(YAG), Lu3 Al 5 O 12 :Ce (LuAG), Y 3 Al 5-x Ga x O 12 :Ce (YGaG), orthosilicate (Ba 1-x Sr x ) 2 SiO 4 :Eu (BOSE) and silicon nitride Salt phosphors such as (Ca,Sr) AlSiN3 :Eu (ECAS or SCASN ), (Ca,Sr,Ba) 2Si5N8 :Eu ( BSSN ) and Sr( LiAl3N4 ) :Eu (SLA )).

在一實例中，光散射結構105可施加至發光器件100以達成一切斷狀態白色外觀，如美國專利申請案第15,722,903中所描述，該案以宛如全文闡述引用方式併入本文中。 In one example, the light scattering structure 105 may be applied to the light emitting device 100 to achieve an off-state white appearance, as described in US Patent Application No. 15,722,903, which is incorporated herein by reference as if set forth in its entirety.

圖1C係可包含於圖1A之發光器件100中之散射結構105之一實例性層之一圖式。散射結構105可由分散於一基質材料165 (其原本為一均質材料)中之複數個散射粒子160形成。例如，基質材料165可為聚矽氧或任何透明或幾乎透明材料或一耐熱及耐光基質(諸如聚矽氧基質)。基質材料165 (例如聚矽氧基質)之一性質係折射率(RI)隨溫度劇烈改變。散射粒子160由具有不同於基質材料165之一RI (例如一更低RI)的(若干)材料形成以提供散射調變。換言之，基質材料165與安置於其中之散射粒子160之間的RI差影響白光112可達成之色點偏移之量值。在一實例中，(多孔或非多孔)二氧化矽(SiO2 )及/或(多孔或非多孔)氟化鎂(MgF2 )可包含於散射粒子160之材料中。例如，可使用一多孔SiO2 或一非多孔MgF2 。在圖1A及圖1C未展示之一替代實施例中，散射粒子160可包含於波長轉換結構110中。1C is a drawing of an example layer of one of the scattering structures 105 that may be included in the light emitting device 100 of FIG. 1A. The scattering structure 105 may be formed by a plurality of scattering particles 160 dispersed in a matrix material 165, which is originally a homogeneous material. For example, the matrix material 165 can be polysiloxane or any transparent or nearly transparent material or a heat and light resistant matrix such as polysiloxane. One property of the matrix material 165 (eg, polysiloxane) is that the refractive index (RI) changes drastically with temperature. Scattering particles 160 are formed of material(s) having a different RI than matrix material 165 (eg, a lower RI) to provide scattering modulation. In other words, the RI difference between the matrix material 165 and the scattering particles 160 disposed therein affects the magnitude of the color point shift that the white light 112 can achieve. In one example, (porous or non-porous) silicon dioxide (SiO 2 ) and/or (porous or non-porous) magnesium fluoride (MgF 2 ) may be included in the material of scattering particles 160 . For example, a porous SiO2 or a non - porous MgF2 can be used. In an alternative embodiment not shown in FIGS. 1A and 1C , scattering particles 160 may be included in wavelength converting structure 110 .

隨著發光器件100之溫度因施加一較高驅動電流而升高，散射結構105中經聚矽氧填充之多孔二氧化矽材料160變得更透明，自波長轉換材料110發射之光104之散射量減少。隨著溫度及電流升高，自發光半導體結構115發射之光102之散射量亦減少以導致更多光102及更少光104包括於光112中。依據溫度而變化之此散射及光變化充當一被動色溫調諧系統，因為溫度由驅動電流判定。在此情況中，因為由散射結構105引起之散射隨著溫度升高而減少，所以色點偏移之方向隨著溫度升高而偏移至更冷色彩(更高CCT)。因此，散射結構105實現一被動調光環境，其中色點偏移由驅動電流控制且無需額外輸入，且其中所得白光112之色點在電流增大時自較暖色偏移至較冷色。在一替代實例中，不同材料可用於散射結構105中，使得光散射隨溫度增加。在一實例中，當二氧化鈦用作一基質材料165中之散射粒子160時，由散射結構105引起之光散射隨溫度增加，因為散射粒子160與聚矽氧基質材料165之間的折射率差隨溫度增大。As the temperature of the light emitting device 100 increases due to the application of a higher drive current, the polysiloxane filled porous silica material 160 in the scattering structure 105 becomes more transparent, scattering light 104 emitted from the wavelength converting material 110 amount decreased. As temperature and current increase, the amount of scattering of light 102 emitted from light emitting semiconductor structure 115 also decreases, resulting in more light 102 and less light 104 being included in light 112 . This scattering and light variation as a function of temperature acts as a passive color temperature tuning system because the temperature is determined by the drive current. In this case, since the scattering caused by the scattering structures 105 decreases with increasing temperature, the direction of the color point shift shifts to cooler colors (higher CCT) with increasing temperature. Thus, the scattering structure 105 realizes a passive dimming environment in which the color point shift is controlled by the drive current without additional input, and in which the color point of the resulting white light 112 shifts from warmer to cooler colors as the current increases. In an alternative example, different materials may be used in the scattering structure 105 such that light scattering increases with temperature. In one example, when titanium dioxide is used as scattering particles 160 in a matrix material 165, light scattering by scattering structures 105 increases with temperature because the refractive index difference between scattering particles 160 and polysiloxane matrix material 165 increases with temperature. temperature increases.

在實施例中，散射結構105可形成為具有一厚度t1 之一層或膜。在一實例中，厚度t1 可經選擇以最佳化相變材料之切換速度及/或由發光半導體結構115中之散射結構105佔用之實體空間。在一實例中，厚度t1 可介於50 µm至300 µm之間。 In an embodiment, the scattering structure 105 may be formed as a layer or film having a thickness t 1 . In one example, the thickness t 1 may be selected to optimize the switching speed of the phase change material and/or the physical space occupied by the scattering structures 105 in the light emitting semiconductor structure 115 . In one example, the thickness t 1 may be between 50 μm and 300 μm.

如上文所解釋，散射結構105對光104之散射效應之量值及因此白光112可達成之色點偏移之量值部分取決於散射粒子160之濃度及散射粒子160與基質材料165之間的RI差。 As explained above, the magnitude of the scattering effect of the scattering structures 105 on the light 104 and thus the magnitude of the color point shift achievable by the white light 112 depends in part on the concentration of the scattering particles 160 and the separation between the scattering particles 160 and the matrix material 165 . RI is poor.

判定白光112可達成之色點偏移之量值的另一態樣係用於波長轉換結構110中之磷光體之混合物。調諧波長轉換結構110中磷光體組合之吸收光譜及發射光譜用於藉由擴大散射結構105之散射範圍來控制光112之色點偏移之量值。磷光體可為由摻雜有雜質之一主晶格組成之固體無機材料。主晶格中之雜質可吸收激發光之能量且發射一不同波長之光。根據本文中之揭示內容，重疊波長轉換結構110中不同磷光體之吸收光譜及發射光譜可用於減少特定發射光譜之相對比重，同時增加特定其他發射光譜之相對比重，如下文將描述。 Another aspect of determining the magnitude of the color point shift achievable by white light 112 is for a mixture of phosphors in wavelength conversion structure 110 . The absorption and emission spectra of the phosphor combination in the tuned wavelength conversion structure 110 are used to control the magnitude of the color point shift of the light 112 by expanding the scattering range of the scattering structure 105 . Phosphors may be solid inorganic materials consisting of a host lattice doped with impurities. Impurities in the host lattice can absorb the energy of the excitation light and emit light of a different wavelength. In accordance with the disclosure herein, overlapping the absorption and emission spectra of different phosphors in wavelength conversion structure 110 can be used to reduce the relative weight of certain emission spectra while increasing the relative weight of certain other emission spectra, as will be described below.

圖1D係可包含於圖1A之發光器件100中之波長轉換結構110之一實例性層之一圖式。波長轉換結構110可形成為一基質(黏結劑)材料170中一或多個磷光體(例如兩種或三種類型之磷光體)之一混合物，基質材料170可為(例如)矽樹脂或任何透明或幾乎透明材料或一耐熱及耐光基質(諸如聚矽氧基質)。由於混合，吸收及發射不同類型之光的不同類型之磷光體粒子172、174、176安置於基質材料170中。替代地，波長轉換結構110可為與或不與介入層堆疊在一起之陶瓷磷光體之一或多個薄層。在一實例中，波長轉換結構110可包含一陶瓷磷光體及具有一或多種類型之磷光體粒子之組合的聚矽氧基質兩者。在另一實例中，波長轉換結構110可包含一第一類型之磷光體材料之一陶瓷板及具有陶瓷板之光學路徑中之磷光體粒子之一基質。1D is a diagram of an example layer of a wavelength converting structure 110 that may be included in the light emitting device 100 of FIG. 1A. The wavelength converting structure 110 may be formed as a mixture of one or more phosphors (eg, two or three types of phosphors) in a matrix (binder) material 170, which may be, for example, silicone or any Transparent or nearly transparent material or a heat and light resistant matrix such as polysiloxane. Due to mixing, different types of phosphor particles 172 , 174 , 176 that absorb and emit different types of light are disposed in the matrix material 170 . Alternatively, the wavelength converting structure 110 may be one or more thin layers of ceramic phosphors stacked with or without intervening layers. In one example, the wavelength converting structure 110 may include both a ceramic phosphor and a polysiloxane with a combination of one or more types of phosphor particles. In another example, the wavelength converting structure 110 may comprise a ceramic plate of a first type of phosphor material and a matrix of phosphor particles in an optical path with the ceramic plate.

在圖1D所展示之實例中，波長轉換結構110包含三種類型之磷光體粒子：吸收藍光及綠光且發射紅光之窄頻發紅光磷光體粒子172、吸收藍光及一些綠光(例如400 nm至580 nm之波長範圍內之光)且發射紅光(例如長於580 nm、600 nm或620 nm)之寬頻發紅光磷光體粒子174及吸收藍光及一些綠光且發射綠光之發綠光磷光體。窄頻發紅光磷光體比寬頻發紅光磷光更好地吸收自發綠光磷光體發射之綠光。 In the example shown in FIG. ID, wavelength converting structure 110 includes three types of phosphor particles: narrow-band red-emitting phosphor particles 172 that absorb blue and green light and emit red light, blue light absorbing and some green light (eg, Broadband red-emitting phosphor particles 174 that emit light in the wavelength range of 400 nm to 580 nm) and emit red light (eg, longer than 580 nm, 600 nm, or 620 nm) and light that absorbs blue light and some green light and emits green light Green phosphor. Narrowband red-emitting phosphors absorb green light emitted by spontaneous green phosphors better than broadband red-emitting phosphors.

在圖1A及圖1C未展示之一替代實施例中，散射粒子160可包含於波長轉換結構110中。在此情況中，例如，散射粒子160可在併入磷光體粒子172、174及176之相同時間併入波長轉換材料110中。 In an alternative embodiment not shown in FIGS. 1A and 1C , scattering particles 160 may be included in wavelength converting structure 110 . In this case, for example, scattering particles 160 may be incorporated into wavelength converting material 110 at the same time as phosphor particles 172, 174, and 176 are incorporated.

波長轉換結構110可施加於具有可取決於所用波長轉換材料及/或LED設計之一厚度t2 的一層中。例如，波長轉換結構110之一層可約為t2 =500 µm厚，而其他波長轉換材料可形成為薄至20 µm或厚達1000 µm之層。在其中依一COB設計實施發光器件之一實例中，厚度t2 可較大，例如在400 μm至600 μm之範圍內。在COB設計中，波長轉換結構110可呈凹形或凸形，其可導致厚度t2 之局部偏差。 The wavelength converting structure 110 may be applied in a layer having a thickness t 2 which may depend on the wavelength converting material used and/or the LED design. For example, one layer of the wavelength converting structure 110 may be approximately t 2 =500 µm thick, while other wavelength converting materials may be formed as layers as thin as 20 µm or as thick as 1000 µm. In one example in which the light emitting device is implemented in a COB design, the thickness t 2 may be large, eg, in the range of 400 μm to 600 μm. In a COB design, the wavelength converting structure 110 may be concave or convex, which may result in local deviations in thickness t2 .

圖2係三種類型之磷光體之激發(吸收將一電子激發至一較高能態)光譜及發射光譜之相對強度(其展示為以任意單位(a.u.)正規化)與波長之一光譜圖：SLA磷光體Sr(LiAl3 N4 ):Eu2+ ，其係一窄頻發紅光磷光體；寬頻紅色磷光體，諸如(Ca,Sr)AlSiN3 :Eu2+ 或(Ga,Sr,Ba)2 Si5 N8 :Eu2+ ；及綠色磷光體，諸如(Lu,Y)3 (Al,Ga)5 O12 :Ce3+ 或(Ba,Sr)2 SiO4 :Eu2+ 。如自圖2中之光譜所觀察，SLA窄頻發紅光磷光體可對藍色及綠色波長具有強吸收，其中對約450 nm至約500 nm之間的波長吸收最大(約470 nm最大)，且半峰全幅值(FWHM，作為其中函數達到其半高值之曲線上之點之間的距離之光譜曲線之寬度)約150 nm，隨著緩慢下降至約600 nm而拖尾至長波長。寬頻紅色磷光體吸收可在約435 nm之一較短波長具有一最大值且更多吸收藍色範圍及吸收更少綠色。 Figure 2 is a spectral plot of the relative intensities of the excitation (absorption excites an electron to a higher energy state) and emission spectra (which are shown normalized in arbitrary units (au)) versus wavelength for three types of phosphors: SLA phosphors Sr(LiAl 3 N 4 ):Eu 2+ , which is a narrow-band red-emitting phosphor; broadband red phosphors such as (Ca,Sr)AlSiN 3 :Eu 2+ or (Ga,Sr,Ba ) 2 Si 5 N 8 :Eu 2+ ; and green phosphors such as (Lu,Y) 3 (Al,Ga) 5 O 12 :Ce 3+ or (Ba,Sr) 2 SiO 4 :Eu 2+ . As observed from the spectra in Figure 2, SLA narrowband red-emitting phosphors can have strong absorption for blue and green wavelengths, with absorption maximum for wavelengths between about 450 nm and about 500 nm (maximum at about 470 nm) , and the full amplitude at half maximum (FWHM, the width of the spectral curve as the distance between the points on the curve where the function reaches its half maximum value) is about 150 nm, tailing to long as it slowly drops to about 600 nm wavelength. Broadband red phosphor absorption may have a maximum at a shorter wavelength of about 435 nm and absorb more of the blue range and less green.

如圖2中所見，一紅色磷光體或紅色磷光體組合可有效吸收藍色及綠色波長範圍內(例如400 nm至580 nm之間)之波長。一發光半導體結構115 (其係一藍色LED)可具有很少短於430 nm之發射，因此，可基於傳入光之波長範圍來收窄吸收範圍。紅色磷光體之發射可發生於至少長於580 nm或等於或長於600 nm或620 nm之波長上。 As seen in Figure 2, a red phosphor or combination of red phosphors can effectively absorb wavelengths in the blue and green wavelength ranges (eg, between 400 nm and 580 nm). A light emitting semiconductor structure 115, which is a blue LED, can have an emission rarely shorter than 430 nm, and thus, can narrow the absorption range based on the wavelength range of the incoming light. The emission of the red phosphor can occur at wavelengths at least longer than 580 nm or equal to or longer than 600 nm or 620 nm.

如自圖2可見，在諸多情況中，激發光譜之長波長尾部與發射光譜之短波長頭部重疊。SLA磷光體激發光譜與綠色磷光體發射光譜之間的重疊區域與由SLA磷光體吸收之綠光發射量成比例且因此與轉換成紅光之綠光量成比例。 As can be seen from Figure 2, in many cases the long wavelength tail of the excitation spectrum overlaps the short wavelength head of the emission spectrum. The area of overlap between the SLA phosphor excitation spectrum and the green phosphor emission spectrum is proportional to the amount of green light emission absorbed by the SLA phosphor and thus the amount of green light converted to red light.

因此，波長轉換結構110中磷光體之SLA磷光體激發光譜與綠色磷光體發射光譜之間較大重疊隱含：隨著散射層105之散射(透明度)(或替代地，隨著包含散射粒子之波長轉換結構110之散射)因降低發光器件100之溫度及驅動電流而增加，更多綠光發射由紅色磷光體吸收以因此提供具有一給定調光範圍之光112之色點之一更大偏移。因此，可變動磷光體混合物中不同磷光體(例如綠色、寬頻紅色及窄頻紅色磷光體)之量(比率)以獲得所要色點偏移及調光範圍。例如，具有相對較高窄頻紅色磷光體量之一磷光體混合物將產生調光範圍內之一較大色點偏移且所得光112具有一較大調暖效應。Thus, the larger overlap between the SLA phosphor excitation spectrum and the green phosphor emission spectrum of the phosphors in the wavelength conversion structure 110 implies that with the scattering (transparency) of the scattering layer 105 (or alternatively, with the scattering particles containing scattering particles) Scattering of the wavelength conversion structure 110) is increased by reducing the temperature and drive current of the light emitting device 100, more green light emission is absorbed by the red phosphor to thereby provide a greater color point of light 112 with a given dimming range offset. Thus, the amount (ratio) of the different phosphors (eg, green, broadband red, and narrowband red phosphors) in the phosphor mixture can be varied to achieve the desired color point shift and dimming range. For example, a phosphor mixture with a relatively high amount of narrowband red phosphor will produce a larger color point shift in the dimming range and the resulting light 112 will have a larger warming effect.

在以下實例中，參考圖1A，假定：例如使用上述聚矽氧基質中之多孔二氧化矽或MgF2 ，當接通發光器件100時，光散射結構105隨著發光器件100之溫度升高而變得更透明。亦假定：波長轉換結構110包含聚矽氧樹脂與三種類型之磷光體(SLA磷光體、寬頻紅色磷光體及綠色磷光體)之一混合物。發光器件100之溫度取決於流動通過發光半導體結構115之驅動電流。可(例如)選擇一適當散熱器來控制溫度及驅動電流。在一些LED應用中，期望使溫度保持儘可能低以具有一最佳LED輸出。然而，在高驅動電流處，一LED之溫度可升至等於或高於100°C之高溫。可藉由使用一較小散熱器來進一步升高溫度。若(例如)藉由將多孔二氧化矽或MgF2 粒子與磷光體粒子一起併入波長轉換層110中來將散射結構105併入波長轉換層110中，則較低操作電流及溫度處之散射及色彩轉換兩者增加以產生一較暖白光。In the following example, referring to FIG. 1A , it is assumed that, for example, using porous silica or MgF 2 in the above-described polysiloxane matrix, when the light emitting device 100 is turned on, the light scattering structure 105 increases as the temperature of the light emitting device 100 increases. become more transparent. It is also assumed that the wavelength converting structure 110 comprises a mixture of silicone and one of three types of phosphors (SLA phosphor, broadband red phosphor and green phosphor). The temperature of the light emitting device 100 depends on the drive current flowing through the light emitting semiconductor structure 115 . An appropriate heat sink can, for example, be selected to control temperature and drive current. In some LED applications, it is desirable to keep the temperature as low as possible to have an optimal LED output. However, at high drive currents, the temperature of an LED can rise to high temperatures equal to or higher than 100°C. The temperature can be further increased by using a smaller heat sink. If scattering structures 105 are incorporated into wavelength converting layer 110, for example by incorporating porous silica or MgF particles together with phosphor particles into wavelength converting layer 110, then scattering at lower operating currents and temperatures and color conversion are both increased to produce a warmer white light.

當發光器件100處於接通狀態但依一較低溫度(例如接近室溫)(例如約25°C，其中施加至發光器件100之操作電流可為約30 mA)操作時，光散射結構105係不透明/呈白色且因此對來自波長轉換結構110之組合之光104及自發光半導體結構115發射之光102具有一較高散射效應。在此情況中，光散射結構105將光102及104反射回至波長轉換結構110中，且波長轉換結構110中之窄頻紅色磷光體(例如SLA磷光體)自反射光吸收藍光及綠光同時發射紅光，其減小白光112中之藍光及綠光峰值且增大紅光峰值。此將白光112之色點改變成一較暖色調(例如2000 K至2200 K CCT或大體上1500 K至2500 K)。隨著發光結構之溫度升高(例如，至85°C，其中施加至發光器件100之操作電流可為約250 mA)，光散射結構105變得更透明且減弱發射光102及104之散射效應。因此，更少光102及104反射回至波長轉換結構110，使得SLA磷光體吸收更少反射藍光及綠光，其允許白光112中相對於紅光發射之更多藍光及綠光且將白光112之色點改變成一較冷色調(例如2700 K CCT或更高)。When the light emitting device 100 is in the on state but operating at a lower temperature (eg, near room temperature) (eg, about 25°C, where the operating current applied to the light emitting device 100 may be about 30 mA), the light scattering structure 105 is It is opaque/white and thus has a higher scattering effect on the combined light 104 from the wavelength converting structure 110 and the light 102 emitted from the light emitting semiconductor structure 115 . In this case, the light scattering structure 105 reflects the light 102 and 104 back into the wavelength conversion structure 110, and the narrowband red phosphor (eg, SLA phosphor) in the wavelength conversion structure 110 absorbs blue and green light simultaneously from the reflected light Red light is emitted, which reduces the blue and green light peaks in the white light 112 and increases the red light peak. This changes the color point of the white light 112 to a warmer tone (eg, 2000K to 2200K CCT or generally 1500K to 2500K). As the temperature of the light emitting structure increases (eg, to 85°C, where the operating current applied to the light emitting device 100 may be about 250 mA), the light scattering structure 105 becomes more transparent and reduces the scattering effect of the emitted light 102 and 104 . Thus, less light 102 and 104 is reflected back to the wavelength conversion structure 110, so that the SLA phosphor absorbs less reflected blue and green light, which allows more blue and green light in the white light 112 to be emitted relative to red light and converts the white light 112 Change the color point to a cooler tone (eg 2700 K CCT or higher).

因此，可藉由將導致溫度變化之驅動電流自低器件溫度/電流變動至高器件溫度/電流以對應地使光112色溫之色點自暖白色(較小CCT)偏移至冷白色(較大CCT)來達成自發光器件100發射之光112之一調光效應，如圖3中所繪示。可藉由增加SLA磷光體激發光譜與綠色磷光體發射光譜之間的重疊來擴大調光效應(即，色點偏移)之範圍，如上文所描述。Therefore, the color point of the color temperature of light 112 can be shifted correspondingly from warm white (smaller CCT) to cool white (larger CCT) by varying the drive current causing the temperature change from a low device temperature/current to a high device temperature/current CCT) to achieve a dimming effect of the light 112 emitted from the light emitting device 100 , as shown in FIG. 3 . The range of dimming effects (ie, color point shift) can be expanded by increasing the overlap between the SLA phosphor excitation spectrum and the green phosphor emission spectrum, as described above.

圖4係製造具有光散射調諧以控制色彩偏移之一發光器件(諸如圖1A之發光器件100)之一實例性方法400之一流程圖。實例性方法400包含產生發光半導體結構115 (405)。可(例如)藉由在一生長基板(諸如藍寶石、SiC、Si、GaN或一複合基板)上生長發光半導體結構(諸如III族氮化物半導體結構)來產生發光半導體結構。4 is a flowchart of an example method 400 of fabricating a light emitting device with light scattering tuning to control color shift, such as the light emitting device 100 of FIG. 1A. Example method 400 includes producing light emitting semiconductor structure 115 (405). A light-emitting semiconductor structure can be produced, for example, by growing a light-emitting semiconductor structure, such as a III-nitride semiconductor structure, on a growth substrate, such as sapphire, SiC, Si, GaN, or a composite substrate.

圖4中所繪示之實例性方法400進一步包含藉由在聚矽氧中產生一磷光體混合物來產生波長轉換材料(410)。如上文所描述，磷光體混合物包含至少兩種類型之磷光體，且可包含窄頻SLA磷光體、寬頻發紅光磷光體及/或綠色磷光體。The example method 400 depicted in FIG. 4 further includes producing a wavelength converting material (410) by producing a phosphor mixture in polysilicon. As described above, the phosphor mixture includes at least two types of phosphors, and may include narrow-band SLA phosphors, broadband red-emitting phosphors, and/or green phosphors.

圖4中所繪示之實例性方法400進一步包含將波長轉換材料110施加至發光半導體結構115 (415)。在一實例中，波長轉換材料110可為(例如)經噴塗沈積、旋涂、薄膜沈積(例如，藉由電泳)或模製之一層或膜。為產生波長轉換材料110，磷光體(例如窄頻紅色磷光體、寬頻紅色磷光體及/或綠色磷光體)可依一比率混合於聚矽氧中以達成一所要色點偏移。就一COB設計而言，可將波長轉換材料110施加於COB上(例如，藉由施配或噴塗)，接著進行固化。亦可使用各種磷光體之陶瓷薄層來形成波長轉換結構110。The example method 400 depicted in FIG. 4 further includes applying the wavelength converting material 110 to the light emitting semiconductor structure 115 (415). In one example, the wavelength converting material 110 may be, for example, a layer or film deposited by spray coating, spin coating, thin film deposition (eg, by electrophoresis), or molding. To create the wavelength converting material 110, phosphors (eg, narrowband red phosphors, broadband red phosphors, and/or green phosphors) can be mixed in polysilicon in a ratio to achieve a desired color point shift. For a COB design, the wavelength converting material 110 may be applied to the COB (eg, by dispensing or spraying) and then cured. The wavelength converting structure 110 can also be formed using ceramic thin layers of various phosphors.

圖4中所繪示之實例性方法400進一步包含產生散射材料105 (420)且將其施加至波長轉換材料110 (425)。此可使用此項技術中已知之任何方法(諸如混合及接著一施加技術)來完成。可藉由在具有較高RI之一基質材料165 (諸如聚矽氧基質)中混合散射粒子160 (諸如多孔二氧化矽或MgF2 )來產生散射粒子105。可將包含基質材料165及散射粒子160之散射材料105層疊至波長轉換材料110。例如，散射材料105可併入波長轉換材料110中及/或直接模製於波長轉換材料110上。在一替代實例中，產生波長轉換材料(410)及產生散射材料(420)可為其中組合材料之一組合步驟。 The example method 400 depicted in FIG. 4 further includes generating and applying scattering material 105 (420) to wavelength converting material 110 (425). This can be done using any method known in the art, such as mixing and then an application technique. Scattering particles 105 may be created by mixing scattering particles 160, such as porous silica or MgF2 , in a matrix material 165 having a higher RI, such as a polysiloxane matrix. Scattering material 105 including matrix material 165 and scattering particles 160 may be laminated to wavelength converting material 110 . For example, scattering material 105 may be incorporated into wavelength converting material 110 and/or molded directly on wavelength converting material 110 . In an alternative example, generating the wavelength converting material (410) and generating the scattering material (420) may be one of the combining steps in which the materials are combined.

儘管已詳細描述實施例，但熟習技術者應瞭解，可在不背離本發明之精神之情況下鑑於本發明來對本文中所描述之實施例作出修改。因此，本發明之範疇不意欲受限於所繪示及所描述之特定實施例。 Although the embodiments have been described in detail, those skilled in the art will appreciate that modifications may be made to the embodiments described herein in light of the present invention without departing from the spirit of the invention. Therefore, the scope of the present invention is not intended to be limited to the particular embodiments shown and described.

100:發光器件 102:光 104:光 105:光散射結構/散射層/散射材料 110:波長轉換結構/波長轉換材料/波長轉換層 112:光 115:發光半導體結構 120:接點 125:接點 127:間隙 130:n型區域/n型層 135:發光主動區域 140:p型區域 145:p接點 150:n接點 155:間隙 160:散射粒子 165:基質材料 170:基質材料 172:磷光體粒子 174:磷光體粒子 176:磷光體粒子 400:方法 405:產生發光半導體結構 410:藉由在聚矽氧中產生磷光體混合物來產生波長轉換材料 415:將波長轉換材料施加至發光半導體結構 420:產生散射材料 425:將散射材料施加至波長轉換材料 t1:厚度 t2:厚度100: light emitting device 102: light 104: light 105: light scattering structure/scattering layer/scattering material 110: wavelength conversion structure/wavelength conversion material/wavelength conversion layer 112: light 115: light emitting semiconductor structure 120: contact point 125: contact point 127: gap 130: n-type region/n-type layer 135: light-emitting active region 140: p-type region 145: p-contact 150: n-contact 155: gap 160: scattering particles 165: host material 170: host material 172: phosphorescence Bulk Particles 174: Phosphor Particles 176: Phosphor Particles 400: Method 405: Creating Light Emitting Semiconductor Structures 410: Creating Wavelength Converting Materials by Creating Phosphor Mixtures in Polysilicon 415: Applying Wavelength Converting Materials to Light Emitting Semiconductor Structures 420: Generate scattering material 425: Apply scattering material to wavelength converting material t 1 : Thickness t 2 : Thickness

圖1A係包含一發光半導體結構、一波長轉換結構及一光散射結構之一實例性發光器件之一圖式；1A is a diagram of an exemplary light emitting device including a light emitting semiconductor structure, a wavelength converting structure, and a light scattering structure;

圖1B係可包含於圖1A之發光器件中之一實例性發光半導體結構115之一圖式；FIG. 1B is a diagram of an example light-emitting semiconductor structure 115 that may be included in the light-emitting device of FIG. 1A;

圖1C係可包含於圖1A之發光器件中之散射結構之一實例性層之一圖式；1C is a diagram of an example layer of a scattering structure that may be included in the light emitting device of FIG. 1A;

圖1D係可包含於圖1A之發光器件中之波長轉換結構之一實例性層之一圖式；1D is a diagram of an example layer of a wavelength converting structure that may be included in the light emitting device of FIG. 1A;

圖2係三種類型之磷光體之激發光譜及發射光譜之相對強度(其展示為以任意單位(a.u.)正規化)與波長之一光譜圖；Figure 2 is a spectrogram of the relative intensities (shown normalized to arbitrary units (a.u.)) versus wavelength for the excitation and emission spectra of three types of phosphors;

圖3係繪示可藉由變動驅動電流以導致溫度變化來達成之自發光器件發射之光之調光效應的一圖式；及3 is a diagram illustrating a dimming effect of light emitted from a light emitting device that can be achieved by varying the drive current to induce temperature changes; and

圖4係製造具有光散射調諧以控制色彩偏移之一發光器件(諸如圖1A之發光器件)之一實例性方法之一流程圖。4 is a flow diagram of an example method of fabricating a light emitting device with light scattering tuning to control color shift, such as the light emitting device of FIG. 1A.

100:發光器件 100: Light-emitting device

102:光 102: Light

104:光 104: Light

105:光散射結構/散射層/散射材料 105: Light Scattering Structures / Scattering Layers / Scattering Materials

110:波長轉換結構/波長轉換材料/波長轉換層 110: wavelength conversion structure/wavelength conversion material/wavelength conversion layer

112:光 112: Light

115:發光半導體結構 115: Light-emitting semiconductor structure

120:接點 120: Contact

125:接點 125: Contact

127:間隙 127: Gap

Claims (20)

一種發光器件，其經組態以產生一白光，該發光器件包括：一發光半導體結構，其經組態以發射藍光；一波長轉換結構，其安置於由該發光半導體結構所發射之光之一路徑中且包括一綠色磷光體材料(green phosphor material)、一寬紅色磷光體材料(broad red phosphor material)及一窄紅色磷光體材料(narrow red phosphor material)；及一光散射結構，其相對於該波長轉換結構配置以將光反向散射向(back toward)該波長轉換結構；該光散射結構經組態以在該光散射結構之溫度增加時散射更多光；在操作中，當該光散射結構處於25℃時，該發光器件之白光輸出(white light output)具有低於2500K之一相關色溫，且當該光散射結構處於85℃時，該發光器件之該白光輸出具有高於2700K之一相關色溫。 A light emitting device configured to generate a white light, the light emitting device comprising: a light emitting semiconductor structure configured to emit blue light; a wavelength conversion structure disposed on one of the lights emitted by the light emitting semiconductor structure In the path and including a green phosphor material (green phosphor material), a broad red phosphor material (broad red phosphor material) and a narrow red phosphor material (narrow red phosphor material); and a light scattering structure, relative to the wavelength converting structure is configured to scatter light back toward the wavelength converting structure; the light scattering structure is configured to scatter more light as the temperature of the light scattering structure increases; in operation, when the light When the scattering structure is at 25°C, the white light output of the light emitting device has a correlated color temperature lower than 2500K, and when the light scattering structure is at 85°C, the white light output of the light emitting device has a value higher than 2700K. a correlated color temperature. 如請求項1之發光器件，其中該綠色磷光體材料包括(Lu,Y)3(Al,Ga)5O12：Ce3+或(Ba,Sr)2SiO4：Eu2+。 The light-emitting device of claim 1, wherein the green phosphor material comprises (Lu,Y) 3 (Al,Ga) 5 O 12 :Ce 3+ or (Ba,Sr) 2 SiO 4 :Eu 2+ . 如請求項1之發光器件，其中該窄紅色磷光體材料包括SLA磷光體Sr(LiAl3N4)：Eu2+。 The light emitting device of claim 1, wherein the narrow red phosphor material comprises an SLA phosphor Sr(LiAl 3 N 4 ):Eu 2+ . 如請求項1之發光器件，其中該寬紅色磷光體材料包括(Ca,Sr)AlSiN3：Eu2+或(Ga,Sr,Ba)2Si5N8：Eu2+。 The light emitting device of claim 1, wherein the broad red phosphor material comprises (Ca,Sr) AlSiN3 :Eu2 + or (Ga,Sr,Ba ) 2Si5N8 : Eu2 + . 如請求項1之發光器件，其中：該綠色磷光體材料包括(Lu,Y)3(Al,Ga)5O12：Ce3+或(Ba,Sr)2SiO4：Eu2+；該窄紅色磷光體材料包括SLA磷光體Sr(LiAl3N4)：Eu2+；且該寬紅色磷光體材料包括(Ca,Sr)AlSiN3：Eu2+或(Ga,Sr,Ba)2Si5N8：Eu2+。 The light-emitting device of claim 1, wherein: the green phosphor material comprises (Lu,Y) 3 (Al,Ga) 5 O 12 : Ce 3+ or (Ba,Sr) 2 SiO 4 :Eu 2+ ; the narrow The red phosphor material includes SLA phosphor Sr( LiAl3N4 ):Eu2 + ; and the broad red phosphor material includes ( Ca ,Sr) AlSiN3 :Eu2 + or (Ga,Sr,Ba ) 2Si5 N 8 : Eu 2+ . 如請求項1之發光器件，其中該光散射結構之一第二材料包括聚矽氧(silicone)，且該光散射結構之一第一材料包括MgF2。 The light emitting device of claim 1 , wherein a second material of the light scattering structure includes polysilicone, and a first material of the light scattering structure includes MgF 2 . 如請求項1之發光器件，其中該光散射結構之一第二材料包括聚矽氧，且該光散射結構之一第一材料包括多孔二氧化矽(porous silica)。 The light-emitting device of claim 1, wherein a second material of the light scattering structure comprises polysilicon, and a first material of the light scattering structure comprises porous silica. 如請求項1之發光器件，其中該光散射結構包括分散於具有一第二折射率n2之一第二材料中的具有一第一折射率n1之一第一材料之複數個散射粒子，(n2-n1)在25℃處具有比85℃處大之一量值，且該第二材料中的散射粒子之一濃度及該數值(n2-n1)在25℃與85℃之間的一改變使得當該光散射結構處操作於25℃時，該發光器件之該白光輸出具有低於2500K之一相關色溫，且當該光散射結構處於85℃時，該發光器件之該白光輸出具有高於2700K之一相關色溫。 The light-emitting device of claim 1, wherein the light scattering structure comprises a plurality of scattering particles of a first material having a first refractive index n1 dispersed in a second material having a second refractive index n2 , (n 2 -n 1 ) has a greater magnitude at 25°C than at 85°C, and a concentration of scattering particles in the second material and this value (n 2 -n 1 ) at 25°C and 85°C A change between is such that when the light scattering structure is operated at 25°C, the white light output of the light emitting device has a correlated color temperature lower than 2500K, and when the light scattering structure is at 85°C, the white light output of the light emitting device has a correlated color temperature of less than 2500K. White light output has a correlated color temperature higher than 2700K. 如請求項1之發光器件，其中： 該窄紅色磷光體材料包括SLA磷光體Sr(LiAl3N4)：Eu2+；且該寬紅色磷光體材料包括(Ca,Sr)AlSiN3：Eu2+或(Ga,Sr,Ba)2Si5N8：Eu2+。 The light emitting device of claim 1, wherein: the narrow red phosphor material comprises SLA phosphor Sr(LiAl 3 N 4 ):Eu 2+ ; and the broad red phosphor material comprises (Ca,Sr)AlSiN 3 :Eu 2 + or (Ga,Sr,Ba) 2 Si 5 N 8 : Eu 2+ . 如請求項1之發光器件，其中在操作中，當該光散射結構處於25℃時，該發光器件之該白光輸出具有約2000K之一相關色溫，且當該光散射結構處於85℃時，該發光器件之該白光輸出具有高於3000K之一相關色溫。 The light emitting device of claim 1, wherein, in operation, when the light scattering structure is at 25°C, the white light output of the light emitting device has a correlated color temperature of about 2000K, and when the light scattering structure is at 85°C, the white light output The white light output of the light emitting device has a correlated color temperature higher than 3000K. 如請求項1之發光器件，其中在操作中，當該光散射結構處於25℃時，該發光器件之該白光輸出具有介於2000K與2200K之間的一相關色溫，且當該光散射結構處於85℃時，該發光器件之該白光輸出具有高於2700K之一相關色溫。 The light emitting device of claim 1, wherein in operation, when the light scattering structure is at 25°C, the white light output of the light emitting device has a correlated color temperature between 2000K and 2200K, and when the light scattering structure is at At 85°C, the white light output of the light-emitting device has a correlated color temperature higher than 2700K. 如請求項1之發光器件，其中在操作中，當該光散射結構處於25℃時，該發光器件之該白光輸出具有介於1500K與2500K之間的一相關色溫，且當該光散射結構處於85℃時，該發光器件之該白光輸出具有高於2700K之一相關色溫。 The light emitting device of claim 1, wherein in operation, when the light scattering structure is at 25°C, the white light output of the light emitting device has a correlated color temperature between 1500K and 2500K, and when the light scattering structure is at At 85°C, the white light output of the light-emitting device has a correlated color temperature higher than 2700K. 一種發光器件，其經組態以產生一白光，該發光器件包括：一發光半導體結構，其經組態以在一驅動電流被施加至該發光半導體結構時發射藍光；一波長轉換結構，其安置於由該發光半導體結構所發射之光之一路 徑中且包括一綠色磷光體材料、一寬紅色磷光體材料及一窄紅色磷光體材料；及一光散射結構，其相對於該波長轉換結構配置以將光反向散射向該波長轉換結構；該光散射結構經組態以在該驅動電流增加時散射更多光；在操作中，當約30mA之一驅動電流被施加至該發光半導體結構時，該發光器件之白光輸出具有低於2500K之一相關色溫，且當約250mA之一驅動電流被施加至該發光半導體結構時，該發光器件之該白光輸出具有高於2700K之一相關色溫。 A light emitting device configured to generate a white light, the light emitting device comprising: a light emitting semiconductor structure configured to emit blue light when a drive current is applied to the light emitting semiconductor structure; a wavelength conversion structure disposed in a path of light emitted by the light emitting semiconductor structure in and including a green phosphor material, a broad red phosphor material, and a narrow red phosphor material; and a light scattering structure configured relative to the wavelength converting structure to backscatter light toward the wavelength converting structure; The light scattering structure is configured to scatter more light as the drive current increases; in operation, when a drive current of about 30 mA is applied to the light emitting semiconductor structure, the light emitting device has a white light output below 2500K a correlated color temperature, and the white light output of the light emitting device has a correlated color temperature higher than 2700K when a driving current of about 250 mA is applied to the light emitting semiconductor structure. 如請求項13之發光器件，其中該綠色磷光體材料包括(Lu,Y)3(Al,Ga)5O12：Ce3+或(Ba,Sr)2SiO4：Eu2+。 The light-emitting device of claim 13, wherein the green phosphor material comprises (Lu,Y) 3 (Al,Ga) 5 O 12 :Ce 3+ or (Ba,Sr) 2 SiO 4 :Eu 2+ . 如請求項13之發光器件，其中該窄紅色磷光體材料包括SLA磷光體Sr(LiAl3N4)：Eu2+。 The light emitting device of claim 13, wherein the narrow red phosphor material comprises an SLA phosphor Sr(LiAl 3 N 4 ):Eu 2+ . 如請求項13之發光器件，其中該寬紅色磷光體材料包括(Ca,Sr)AlSiN3：Eu2+或(Ga,Sr,Ba)2Si5N8：Eu2+。 The light emitting device of claim 13, wherein the broad red phosphor material comprises (Ca,Sr) AlSiN3 :Eu2 + or (Ga,Sr,Ba ) 2Si5N8 : Eu2 + . 如請求項13之發光器件，其中：該綠色磷光體材料包括(Lu,Y)3(Al,Ga)5O12：Ce3+或(Ba,Sr)2SiO4：Eu2+；該窄紅色磷光體材料包括SLA磷光體Sr(LiAl3N4)：Eu2+；且 該寬紅色磷光體材料包括(Ca,Sr)AlSiN3：Eu2+或(Ga,Sr,Ba)2Si5N8：Eu2+。 The light-emitting device of claim 13, wherein: the green phosphor material comprises (Lu, Y) 3 (Al, Ga) 5 O 12 : Ce 3+ or (Ba, Sr) 2 SiO 4 : Eu 2+ ; the narrow The red phosphor material includes SLA phosphor Sr( LiAl3N4 ):Eu2 + ; and the broad red phosphor material includes ( Ca ,Sr) AlSiN3 :Eu2 + or (Ga,Sr,Ba ) 2Si5 N 8 : Eu 2+ . 如請求項13之發光器件，其中在操作中，當該驅動電流係約30mA時，該發光器件之該白光輸出具有介於2000K與2200K之間的一相關色溫，且當該驅動電流係250mA時，該發光器件之該白光輸出具有高於2700K之一相關色溫。 The light emitting device of claim 13, wherein in operation, the white light output of the light emitting device has a correlated color temperature between 2000K and 2200K when the drive current is about 30mA, and when the drive current is 250mA , the white light output of the light-emitting device has a correlated color temperature higher than 2700K. 如請求項13之發光器件，其中在操作中，當該驅動電流係約30mA時，該發光器件之該白光輸出具有介於1500K與2500K之間的一相關色溫，且當該驅動電流係約250mA時，該發光器件之該白光輸出具有高於2700K之一相關色溫。 The light emitting device of claim 13, wherein in operation, the white light output of the light emitting device has a correlated color temperature between 1500K and 2500K when the drive current is about 30mA, and when the drive current is about 250mA , the white light output of the light-emitting device has a correlated color temperature higher than 2700K. 一種發光器件，其經組態以產生一白光，該發光器件包括：一發光半導體結構，其經組態以發射藍光；一波長轉換結構，其安置於由該發光半導體結構所發射之光之一路徑中，且包括經組態以發射綠色光之一第一磷光體材料、經組態以發射紅色光之一第二磷光體材料及包括SLA磷光體Sr(LiAl3N4)：Eu2+之一第三磷光體材料；及一光散射結構，其相對於該波長轉換結構配置以將光反向散射向該波長轉換結構；該光散射結構經組態以在該光散射結構之溫度增加時散射更多光；在操作中，當該光散射結構處於25℃時，該發光器件之白光輸出具 有低於2500K之一相關色溫，且當該光散射結構處於85℃時，該發光器件之該白光輸出具有高於2700K之一相關色溫。 A light emitting device configured to generate a white light, the light emitting device comprising: a light emitting semiconductor structure configured to emit blue light; a wavelength conversion structure disposed on one of the lights emitted by the light emitting semiconductor structure path, and includes a first phosphor material configured to emit green light, a second phosphor material configured to emit red light, and includes an SLA phosphor Sr(LiAl 3 N 4 ):Eu 2+ a third phosphor material; and a light scattering structure configured relative to the wavelength converting structure to backscatter light toward the wavelength converting structure; the light scattering structure configured to increase in temperature of the light scattering structure When the light scattering structure is at 25°C, the white light output of the light-emitting device has a correlated color temperature below 2500K, and when the light-scattering structure is at 85°C, the light-emitting device has a The white light output has a correlated color temperature higher than 2700K.
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