TWI755292B

TWI755292B - Plasma process machine for unilateral and bilateral processing

Info

Publication number: TWI755292B
Application number: TW110107061A
Authority: TW
Inventors: 蔡明展; 邱敬凱; 劉品均; 李原吉
Original assignee: 友威科技股份有限公司
Priority date: 2021-02-26
Filing date: 2021-02-26
Publication date: 2022-02-11
Also published as: TW202234509A

Abstract

A unilaterally or bilaterally applicable plasma processing machine includes a machine body, a first electrode, a second electrode, a control module, a movement device, and a voltage switch module. The movement device includes a movable carrier disposed between the first and the second electrodes and movable between a unilateral processing position and a bilateral processing position for carrying a target plate. With the movable carrier at the unilateral processing position, the target plate is supported on the second electrode and the movable carrier. With the movable carrier at the bilateral processing position, the movable carrier suspends the target plate between the first and the second electrodes. The voltage switch module is electrically connected with the control module and an external power source, which is switchable for the electrodes to carry out a unilateral or bilateral plasma process.

Description

可單面或雙面電漿製程機台Single-sided or double-sided plasma processing machine

本發明係有關於一種電漿製程機台，特別是指一種可單面或雙面電漿製程機台。The present invention relates to a plasma processing machine, in particular to a single-sided or double-sided plasma processing machine.

按，常見的電漿製程機台大都是用於待加工物的單面電漿製程，藉以通過蝕刻氣體與高壓電場而使待加工物的其中一面進行電漿製程。According to this, most of the common plasma processing machines are used for the single-side plasma processing of the object to be processed, so that one side of the object to be processed is subjected to the plasma processing through etching gas and a high-voltage electric field.

另外，目前也有可同時對待加工物的雙面進行電漿製程的機台或設備，但實際上單面電漿製程與雙面電漿製程所運用的機台或設備並不相同，且兩者的加工參數條件也不同，因此相關製造業者在面臨單面與雙面加工需求時，則必須要購置兩種不同的機台或設備來因應，致使購置成本高，相對的也需要較大的廠區面積來擺設所述的機台或設備。In addition, there are also machines or equipment that can perform plasma processing on both sides of the object to be processed at the same time, but in fact, the machines or equipment used in the single-sided plasma process and the double-sided plasma process are different, and the two The processing parameters and conditions are also different. Therefore, when the relevant manufacturers face the needs of single-sided and double-sided processing, they must purchase two different machines or equipment to respond, resulting in high purchase costs and relatively large factory areas. area to display the machine or equipment.

為解決上述課題，本發明揭露一種可單面或雙面電漿製程機台，其利用位移裝置將待加工板活動設置於第一電極與第二電極之間，並以電壓切換模組選擇性地切換外部電源，藉以達到單一機台適用於單面或雙面的電漿製程，而能夠降低機台購置的成本。In order to solve the above problems, the present invention discloses a single-sided or double-sided plasma processing machine, which utilizes a displacement device to move the plate to be processed between the first electrode and the second electrode, and switches the module selectivity by voltage switching. The external power supply can be switched to the ground, so that a single machine is suitable for single-sided or double-sided plasma process, and the cost of purchasing the machine can be reduced.

為達上述目的，本發明實施例中提供一種可單面或雙面電漿製程機台，其能夠對一待加工板進行單面或雙面電漿製程，待加工板具有一第一面及一第二面，可單面或雙面電漿製程機台包括一機體、一第一電極、一第二電極、一控制模組、一位移裝置及一電壓切換模組。機體具有一腔室。第一電極設於腔室內。第二電極設於腔室內而與第一電極面對面設置。控制模組設於機體。位移裝置設於機體並電性連接於控制模組，位移裝置具有一活動載板，係設置於第一電極與第二電極之間，用以承載待加工板，活動載板係於一單面加工位置及一雙面加工位置之間位移，於單面加工位置時，待加工板之第二面支撐於第二電極與活動載板上，於雙面加工位置時，活動載板使待加工板懸空於第一電極與第二電極之間。電壓切換模組電性連接於控制模組與外部電源，並選擇性地切換所述外部電源，以促使第一電極與第二電極對待加工板進行單面或雙面電漿製程。In order to achieve the above purpose, the embodiment of the present invention provides a single-sided or double-sided plasma processing machine, which can perform single-sided or double-sided plasma processing on a plate to be processed, and the plate to be processed has a first surface and a double-sided plasma process. A second-side, single-side or double-side plasma processing machine includes a body, a first electrode, a second electrode, a control module, a displacement device and a voltage switching module. The body has a chamber. The first electrode is arranged in the chamber. The second electrode is arranged in the chamber and faces the first electrode. The control module is arranged on the body. The displacement device is arranged on the body and is electrically connected to the control module. The displacement device has a movable carrier plate, which is arranged between the first electrode and the second electrode to carry the plate to be processed, and the movable carrier plate is attached to a single side Displacement between the processing position and a double-sided processing position. In the single-sided processing position, the second surface of the plate to be processed is supported on the second electrode and the movable carrier plate. In the double-sided processing position, the movable carrier plate makes the The plate is suspended between the first electrode and the second electrode. The voltage switching module is electrically connected to the control module and the external power source, and selectively switches the external power source, so as to cause the first electrode and the second electrode to perform a single-sided or double-sided plasma process on the plate to be processed.

藉此，本發明於位移裝置未作動前，待加工板貼設於第二電極，而能進行單面電漿裝程，而經由位移裝置作動將待加工板頂撐推升，使待加工板懸設於第一電極與第二電極之間，而能進行雙面電漿製程；另外透過電壓切換模組切換外部電源，而對應地選用電壓頻率，使本發明具有在單一機台上對待加工板執行單面或雙面的電漿製程的優點及功效，並降低業者購置不同機台的成本。Therefore, in the present invention, before the displacement device is actuated, the plate to be processed is attached to the second electrode, so that the single-sided plasma loading process can be performed, and the top support of the plate to be processed is pushed up through the actuation of the displacement device, so that the plate to be processed is pushed up. It is suspended between the first electrode and the second electrode, so that the double-sided plasma process can be performed; in addition, the external power supply is switched through the voltage switching module, and the voltage and frequency are correspondingly selected, so that the present invention has the ability to be processed on a single machine. The advantages and efficacy of the single-sided or double-sided plasma process for the board, and reduce the cost of purchasing different machines for the industry.

以下參照各附圖詳細描述本發明的示例性實施例，且不意圖將本發明的技術原理限制於特定公開的實施例，而本發明的範圍僅由申請專利範圍限制，涵蓋了替代、修改和等同物。Exemplary embodiments of the present invention are described in detail below with reference to the accompanying drawings, and are not intended to limit the technical principles of the present invention to the specific disclosed embodiments, but the scope of the present invention is limited only by the scope of the patent application, and covers substitutions, modifications, and equivalent.

請參閱圖1至圖6所示，本發明為一種可單面或雙面電漿製程機台100，能夠對一待加工板200進行單面或雙面電漿製程，待加工板200為複合式電路板、印刷電路板、銅箔基板（CCL）、玻璃載板等等。待加工板200具有一第一面201及一第二面202。可單面或雙面電漿製程機台100包括一機體10、一第一電極20、一第二電極30、一控制模組40、一位移裝置50及一電壓切換模組60，機體10具有一腔室11。此外，於本發明實施例中，更包括一氣體裝置70及一排氣部80連通於腔室11，排氣部80能夠連接於抽氣泵浦，氣體裝置70用以導入電漿製程所需要的氣體至腔室11，以便對待加工板200進行電漿製程。而排氣部80可以在待加工板200移入或移出腔室11內部時，進行排氣動作而使腔室11內的真空度調整至規定值。Referring to FIGS. 1 to 6 , the present invention is a single-sided or double-sided plasma processing machine 100 capable of performing single-sided or double-sided plasma processing on a to-be-processed board 200 . The to-be-processed board 200 is a composite Type circuit boards, printed circuit boards, copper foil substrates (CCL), glass substrates, etc. The plate 200 to be processed has a first surface 201 and a second surface 202 . The single-sided or double-sided plasma process machine 100 includes a body 10 , a first electrode 20 , a second electrode 30 , a control module 40 , a displacement device 50 and a voltage switching module 60 . The body 10 has A chamber 11 . In addition, in the embodiment of the present invention, it further includes a gas device 70 and an exhaust part 80 connected to the chamber 11 , the exhaust part 80 can be connected to an air pump, and the gas device 70 is used for introducing the needs of the plasma process. The gas is supplied to the chamber 11 so as to perform a plasma process on the plate 200 to be processed. The exhaust part 80 can perform an exhaust operation when the plate to be processed 200 is moved into or out of the chamber 11 to adjust the vacuum degree in the chamber 11 to a predetermined value.

第一電極20，係設於腔室11內。於本發明實施例中，第一電極20還能夠包括複數個穿孔21，使氣體裝置70所供應的氣體經由穿孔21而導入腔室11內。The first electrode 20 is arranged in the chamber 11 . In the embodiment of the present invention, the first electrode 20 can further include a plurality of through holes 21 , so that the gas supplied by the gas device 70 is introduced into the chamber 11 through the through holes 21 .

第二電極30，係設於腔室11內而與第一電極20面對面設置。第二電極30包括複數個貫穿孔31，且第二電極30面向第一電極20的一側設有一矩形狀的凹槽32。The second electrode 30 is disposed in the chamber 11 and faces the first electrode 20 . The second electrode 30 includes a plurality of through holes 31 , and a rectangular groove 32 is formed on the side of the second electrode 30 facing the first electrode 20 .

控制模組40，係設於機體10。前述的位移裝置50、電壓切換模組60、氣體裝置70均電性連接於控制模組40而使其控制運作。The control module 40 is installed in the body 10 . The aforementioned displacement device 50 , the voltage switching module 60 , and the gas device 70 are all electrically connected to the control module 40 to control and operate.

位移裝置50，係設於機體10。位移裝置50包括一絕緣材質製成的活動載板51，其外形與第二電極30的凹槽32形狀相符並設置於第一電極20與第二電極30之間，用以承載待加工板200，活動載板51具有一第一中空部511及一第一周圍部512，在本發明實施例中，第一中空部511為單一個而對應於待加工板200之待加工區域，特別是對應於待加工板200的第二面202，而在其他實施例中，第一中空部511也可是兩個。第一周圍部512大致上對應於待加工板200周緣的無效區域。第一電極20與第二電極30之間的間距為電漿蝕刻間距，而待加工板200於此間距進行電漿製程。活動載板51係於一單面加工位置及一雙面加工位置之間位移，於單面加工位置時，活動載板51的第一周圍部512沉潛於第二電極30的凹槽32，使得待加工板200之第一面201面向第一電極20，第二面202支撐於第二電極30與活動載板51上，且透過凹槽32更能讓待加工板200能貼附於第二電極30，避免第二電極30與待加工板200之第二面202之間產生電漿，而有不必要的製程發生。其中，於單面加工位置時，第一電極20與第二電極30的距離D1介於50mm至100mm之間，距離D1較佳為80mm。而於雙面加工位置時，活動載板51使待加工板200懸空於第一電極20與第二電極30之間。The displacement device 50 is installed on the body 10 . The displacement device 50 includes a movable carrier plate 51 made of insulating material, the shape of which conforms to the shape of the groove 32 of the second electrode 30 and is disposed between the first electrode 20 and the second electrode 30 for supporting the plate to be processed 200 , the movable carrier plate 51 has a first hollow portion 511 and a first peripheral portion 512. In the embodiment of the present invention, the first hollow portion 511 is single and corresponds to the to-be-processed area of the to-be-processed plate 200, especially the On the second surface 202 of the plate 200 to be processed, and in other embodiments, the number of the first hollow parts 511 may also be two. The first peripheral portion 512 generally corresponds to an inactive area of the periphery of the plate 200 to be processed. The distance between the first electrode 20 and the second electrode 30 is the plasma etching distance, and the plate 200 to be processed is subjected to the plasma process at this distance. The movable carrier 51 is displaced between a single-sided processing position and a double-sided processing position. In the single-sided processing position, the first peripheral portion 512 of the movable carrier 51 is submerged in the groove 32 of the second electrode 30 , so that The first surface 201 of the plate to be processed 200 faces the first electrode 20 , the second surface 202 is supported on the second electrode 30 and the movable carrier plate 51 , and the plate to be processed 200 can be attached to the second plate 200 through the groove 32 . The electrode 30 avoids the generation of plasma between the second electrode 30 and the second surface 202 of the plate 200 to be processed, and unnecessary processes occur. Wherein, in the single-side processing position, the distance D1 between the first electrode 20 and the second electrode 30 is between 50 mm and 100 mm, and the distance D1 is preferably 80 mm. In the double-sided processing position, the movable carrier plate 51 makes the plate 200 to be processed suspended between the first electrode 20 and the second electrode 30 .

於本發明實施例中，位移裝置50更包括一第一驅動單元52及複數個頂撐柱53。所述頂撐柱53一端連接於第一驅動單元52，另一端穿伸第二電極30之貫穿孔31而連接於活動載板51的第一周圍部512，第一驅動單元52可為壓缸，第一驅動單元52驅使所述頂撐柱53，而控制活動載板51於第一電極20與第二電極30之間位移，以待加工板200能夠由單面加工位置而受頂撐柱53撐起而使活動載板51位移至雙面加工位置。In the embodiment of the present invention, the displacement device 50 further includes a first driving unit 52 and a plurality of top support columns 53 . One end of the top support column 53 is connected to the first driving unit 52 , and the other end penetrates through the through hole 31 of the second electrode 30 and is connected to the first peripheral portion 512 of the movable carrier plate 51 . The first driving unit 52 can be a cylinder. , the first drive unit 52 drives the top support column 53 to control the movable carrier plate 51 to move between the first electrode 20 and the second electrode 30, so that the plate 200 to be processed can be supported by the top support column from the single-sided processing position 53 is propped up so that the movable carrier plate 51 is displaced to the double-sided processing position.

於本發明實施例中，位移裝置50更包括複數個支撐柱54，其與所述頂撐柱53平行設置，所述支撐柱54一端連接於第一驅動單元52，另一端穿伸第二電極30之貫穿孔31而對應於活動載板51的第一中空部511並能夠支撐待加工板200，用以增加頂撐的穩定度。In the embodiment of the present invention, the displacement device 50 further includes a plurality of support columns 54, which are arranged in parallel with the top support column 53. One end of the support column 54 is connected to the first driving unit 52, and the other end extends through the second electrode. The through hole 31 of 30 corresponds to the first hollow portion 511 of the movable carrier plate 51 and can support the plate 200 to be processed, so as to increase the stability of the top support.

另外說明的是，第一驅動單元52與頂撐柱53、支撐柱54之間還能夠透過額外的連動組件（圖中未繪出）設置的方式進行固定連接，用以將第一驅動單元52的驅動力同步傳遞至頂撐柱53及支撐柱54。In addition, it should be noted that the first drive unit 52 can also be fixedly connected to the top support column 53 and the support column 54 by means of additional linkage components (not shown in the figure), so as to connect the first drive unit 52 The driving force is transmitted to the top support column 53 and the support column 54 synchronously.

電壓切換模組60電性連接於控制模組40與外部電源300、301，並選擇性地切換所述外部電源300、301，以促使第一電極20與第二電極30對待加工板200進行單面或雙面電漿製程。其中，電壓切換模組60包括一第一切換開關61及一第二切換開關62。於本發明實施例中，第一切換開關61選擇性地使外部電源300供應一第一電壓至第二電極30並且將第二切換開關62切換至接地端，藉此可用於實施單面電漿製程，例如是用作等向性蝕刻製程；或是第一切換開關61與第二切換開關62選擇性地使外部電源301供應一第二電壓至第一電極20與第二電極30，藉此可用於實施雙面電漿製程，例如是用作電鍍前的前置處理，如待加工板200的表面作親水性處理，以利於後續濕式製程之進行。。因此，本發明依據單面電漿製程或是雙面電漿製程，而操控電壓切換模組60，使兩外部電源300、301進行切換，以便供應電壓至第一電極20與第二電極30。The voltage switching module 60 is electrically connected to the control module 40 and the external power sources 300, 301, and selectively switches the external power sources 300, 301, so as to cause the first electrode 20 and the second electrode 30 to perform a single operation on the plate to be processed 200. Surface or double-sided plasma process. The voltage switching module 60 includes a first switch 61 and a second switch 62 . In the embodiment of the present invention, the first switch 61 selectively enables the external power supply 300 to supply a first voltage to the second electrode 30 and switches the second switch 62 to the ground terminal, which can be used to implement single-sided plasma The process, for example, is used as an isotropic etching process; or the first switch 61 and the second switch 62 selectively enable the external power source 301 to supply a second voltage to the first electrode 20 and the second electrode 30, thereby It can be used to implement the double-sided plasma process, for example, it is used as a pretreatment before electroplating, such as hydrophilic treatment on the surface of the board 200 to be processed, so as to facilitate the subsequent wet process. . Therefore, the present invention controls the voltage switching module 60 according to the single-sided plasma process or the double-sided plasma process to switch the two external power sources 300 and 301 so as to supply voltage to the first electrode 20 and the second electrode 30 .

本發明更包括一抵壓裝置90，當位於雙面加工位置時，抵壓裝置90與活動載板51共同夾設待加工板200，而能穩固夾持待加工板200，以便進行電漿製程作業。其中，抵壓裝置90電性連接於控制模組40，抵壓裝置90具有一第二驅動單元91及一絕緣材質製成的抵壓板92，抵壓板92的面積大於活動載板51的面積。抵壓板92受第二驅動單元91驅使而活動設置於第一電極20與第二電極30之間。於本發明實施例中，抵壓板92包括一第二中空部921及一第二周圍部922，第二中空部921係對應於第一電極20與待加工板200的第一面201，抵壓裝置90更包括複數個穿伸機體10的抵壓桿93，所述抵壓桿93一端連接於第二驅動單元91，另一端連接於抵壓板92的第二周圍部922。第二驅動單元91亦為壓缸，第二驅動單元91驅使所述抵壓桿93產生位移而控制抵壓板92於第一電極20與第二電極30之間位移，以便在雙面加工位置時，抵壓板92與活動載板51共同穩定地夾設待加工板200。其中，於雙面加工位置，活動載板51至第一電極20的距離D2介於25mm至50mm之間，活動載板51至第二電極30的距離D3介於25mm至50mm之間。The present invention further includes a pressing device 90 , when it is in the double-sided processing position, the pressing device 90 and the movable carrier plate 51 jointly clamp the plate to be processed 200 , so as to firmly clamp the plate to be processed 200 so as to carry out the plasma process Operation. The pressing device 90 is electrically connected to the control module 40 . The pressing device 90 has a second driving unit 91 and a pressing plate 92 made of insulating material. The area of the pressing plate 92 is larger than that of the movable carrier plate 51 . The pressing plate 92 is driven by the second driving unit 91 to be movably disposed between the first electrode 20 and the second electrode 30 . In the embodiment of the present invention, the pressing plate 92 includes a second hollow portion 921 and a second peripheral portion 922. The second hollow portion 921 corresponds to the first electrode 20 and the first surface 201 of the plate 200 to be processed, and the pressing The device 90 further includes a plurality of pressing rods 93 extending through the body 10 . One end of the pressing rods 93 is connected to the second driving unit 91 , and the other end is connected to the second peripheral portion 922 of the pressing plate 92 . The second driving unit 91 is also a pressure cylinder. The second driving unit 91 drives the pressing rod 93 to generate displacement to control the displacement of the pressing plate 92 between the first electrode 20 and the second electrode 30, so that when the double-sided machining position is used , the pressing plate 92 and the movable carrier plate 51 stably clamp the plate to be processed 200 together. In the double-sided processing position, the distance D2 from the movable carrier 51 to the first electrode 20 is between 25 mm and 50 mm, and the distance D3 from the movable carrier 51 to the second electrode 30 is between 25 mm and 50 mm.

另外說明的是，第二驅動單元91與抵壓桿93之間還能夠透過額外的連動組件（圖中未繪出）連接，用以將第二驅動單元91的驅動力傳遞抵壓桿93。It is also noted that the second driving unit 91 and the pressing rod 93 can also be connected through an additional linkage component (not shown in the figure) to transmit the driving force of the second driving unit 91 to the pressing rod 93 .

於本發明另一實施例中，更包括複數個緩衝件94設於抵壓桿93與抵壓板92之間，所述緩衝件94為彈簧，透過緩衝件94能夠達到確認下壓的力道，避免損壞待加工板200。In another embodiment of the present invention, it further includes a plurality of buffer members 94 disposed between the pressing rod 93 and the pressing plate 92, the buffer members 94 are springs, and the buffer member 94 can achieve the force of confirming the pressing down, avoiding The board 200 to be processed is damaged.

如圖5（並配合圖2至圖4）所示，當本實施例中欲執行單面加工時，會將位移裝置50移動至單面加工位置，此時，活動載板51收合於第二電極30的凹槽32，使待加工板200的第二面202置放於第二電極30上，第一面201面向第一電極20，電壓切換模組60的第一切換開關61控制外部電源300施加第一電壓至第二電極30，而使待加工板200的第一面201進行預定的電漿製程作業。As shown in FIG. 5 (and in conjunction with FIGS. 2 to 4 ), when the single-sided processing is to be performed in this embodiment, the displacement device 50 will be moved to the single-sided processing position. At this time, the movable carrier plate 51 is folded in the first The grooves 32 of the two electrodes 30 allow the second surface 202 of the plate to be processed 200 to be placed on the second electrode 30, the first surface 201 faces the first electrode 20, and the first switch 61 of the voltage switching module 60 controls the external The power source 300 applies a first voltage to the second electrode 30, so that the first surface 201 of the plate 200 to be processed is subjected to a predetermined plasma process operation.

如圖6（並配合圖2至圖4）所示，當本發明欲執行雙面加工時，會將位移裝置50移動至雙面加工位置此時，位移裝置50以頂撐柱53將活動載板51朝第一電極20方向頂升而出，而使待加工板200懸空於第一電極20與第二電極30之間，且抵壓裝置90之抵壓板92能夠下壓而與活動載板51共同夾持待加工板200，使其穩固定位。電壓切換模組60的第二切換開關62控制外部電源301施加第二電壓至第一電極20與第二電極30，且第一電極20能夠經由抵壓板92的第二中空部921而對待加工板200的第一面201進行電漿製程，第二電極30能夠經由活動載板51的第一中空部511而對待加工板200的第二面202進行電漿製程。As shown in FIG. 6 (and in conjunction with FIG. 2 to FIG. 4 ), when the present invention intends to perform double-sided processing, the displacement device 50 will be moved to the double-sided processing position. The plate 51 is lifted out toward the first electrode 20, so that the plate 200 to be processed is suspended between the first electrode 20 and the second electrode 30, and the abutting plate 92 of the pressing device 90 can be pressed down to contact the movable carrier plate. 51 jointly clamp the plate 200 to be processed so that it can be firmly positioned. The second switch 62 of the voltage switching module 60 controls the external power source 301 to apply a second voltage to the first electrode 20 and the second electrode 30 , and the first electrode 20 can press against the second hollow portion 921 of the plate 92 to press the plate to be processed The first surface 201 of the 200 is subjected to a plasma process, and the second electrode 30 can be subjected to a plasma process on the second surface 202 of the plate 200 to be processed through the first hollow portion 511 of the movable carrier plate 51 .

因此，本發明能夠在單一機台上，以電壓切換模組60進行電源切換，而使待加工板200進行單面電漿製程作業，或是雙面電漿製程作業，提供業者因應不同的製程需求，據以降低購置兩台不同機台的成本，以及免除多機台需要佔據廠房面積的問題。Therefore, the present invention can use the voltage switching module 60 to switch the power supply on a single machine, so that the board 200 to be processed can be subjected to a single-sided plasma process operation or a double-sided plasma process operation. Therefore, the cost of purchasing two different machines is reduced, and the problem that multiple machines need to occupy the workshop area is eliminated.

以上，雖然本發明是以一個最佳實施例作說明，精於此技藝者能在不脫離本發明精神與範疇下作各種不同形式的改變。前述所舉實施例僅用以說明本發明而已，非用以限制本發明之範圍。舉凡不違本發明精神所從事的種種修改或改變，俱屬本發明申請專利範圍。Although the present invention has been described above with reference to a preferred embodiment, those skilled in the art can make various modifications without departing from the spirit and scope of the present invention. The above-mentioned embodiments are only used to illustrate the present invention, and are not intended to limit the scope of the present invention. All modifications or changes that do not violate the spirit of the present invention shall fall within the scope of the patent application of the present invention.

100:可單面或雙面電漿製程機台 200:待加工板 201:第一面 202:第二面 300:外部電源 301:外部電源 10:機體 11:腔室 20:第一電極 21:穿孔 30:第二電極 31:貫穿孔 32:凹槽 40:控制模組 50:位移裝置 51:活動載板 511:第一中空部 512:第一周圍部 52:第一驅動單元 53:頂撐柱 54:支撐柱 60:電壓切換模組 61:第一切換開關 62:第二切換開關 70:氣體裝置 80:排氣部 90:抵壓裝置 91:第二驅動單元 92:抵壓板 921:第二中空部 922:第二周圍部 93:抵壓桿 94:緩衝件 D1、D2、D3:距離100: single-sided or double-sided plasma processing machine 200: plate to be processed 201: The first side 202: Second Side 300: External power supply 301: External power supply 10: Body 11: Chamber 20: The first electrode 21: Perforation 30: Second electrode 31: Through hole 32: Groove 40: Control Module 50: Displacement device 51: Active carrier board 511: First hollow part 512: First Peripheral Department 52: The first drive unit 53: Top pillar 54: Support column 60: Voltage switching module 61: First toggle switch 62: Second toggle switch 70: Gas device 80: Exhaust part 90: Pressing device 91: Second drive unit 92: Pressing plate 921: Second hollow part 922: Second Peripheral Department 93: Compression rod 94: Buffer D1, D2, D3: Distance

[圖1]為本發明可單面或雙面電漿製程機台的外觀示意圖。 [圖2]為本發明可單面或雙面電漿製程機台架構示意圖。 [圖3]為本發明可單面或雙面電漿製程機台功能方塊示意圖。 [圖4]為本發明可單面或雙面電漿製程機台活動載板與待加工板結構示意圖。 [圖5]為本發明可單面或雙面電漿製程機台位於單面加工位置狀態示意圖。 [圖6]為本發明可單面或雙面電漿製程機台位於雙面加工位置狀態示意圖。 [FIG. 1] is a schematic diagram of the appearance of the single-sided or double-sided plasma process machine of the present invention. [FIG. 2] is a schematic diagram of the structure of a single-sided or double-sided plasma process machine according to the present invention. [FIG. 3] is a functional block diagram of a single-sided or double-sided plasma processing machine according to the present invention. [FIG. 4] is a schematic diagram of the structure of the movable carrier plate and the plate to be processed by the single-sided or double-sided plasma process machine according to the present invention. FIG. 5 is a schematic diagram of the state where the single-sided or double-sided plasma processing machine of the present invention is located at the single-sided processing position. FIG. 6 is a schematic diagram of the state where the single-side or double-side plasma processing machine of the present invention is located at the double-side processing position.

200:待加工板 200: plate to be processed

201:第一面 201: The first side

202:第二面 202: Second Side

300:外部電源 300: External power supply

301:外部電源 301: External power supply

11:腔室 11: Chamber

20:第一電極 20: The first electrode

21:穿孔 21: Perforation

30:第二電極 30: Second electrode

31:貫穿孔 31: Through hole

32:凹槽 32: Groove

40:控制模組 40: Control Module

50:位移裝置 50: Displacement device

51:活動載板 51: Active carrier board

52:第一驅動單元 52: The first drive unit

53:頂撐柱 53: Top pillar

54:支撐柱 54: Support column

60:電壓切換模組 60: Voltage switching module

61:第一切換開關 61: First toggle switch

62:第二切換開關 62: Second toggle switch

70:氣體裝置 70: Gas device

80:排氣部 80: Exhaust part

90:抵壓裝置 90: Pressing device

91:第二驅動單元 91: Second drive unit

92:抵壓板 92: Pressing plate

921:第二中空部 921: Second hollow part

922:第二周圍部 922: Second Peripheral Department

93:抵壓桿 93: Compression rod

94:緩衝件 94: Buffer

Claims

一種可單面或雙面電漿製程機台，其能夠對一待加工板進行單面或雙面電漿製程，該待加工板具有一第一面及一第二面，該可單面或雙面電漿製程機台包括：一機體，係具有一腔室；一第一電極，係設於該腔室內；一第二電極，係設於該腔室內而與該第一電極面對面設置；一控制模組，係設於該機體；一位移裝置，係設於該機體並電性連接於該控制模組，該位移裝置具有一活動載板，係設置於該第一電極與該第二電極之間，用以承載該待加工板，該活動載板係於一單面加工位置及一雙面加工位置之間位移，於該單面加工位置時，該待加工板之第二面支撐於該第二電極與該活動載板上，於該雙面加工位置時，該活動載板使該待加工板懸空於該第一電極與該第二電極之間；以及一電壓切換模組，係電性連接於該控制模組與外部電源，並選擇性地切換所述外部電源，以促使該第一電極與該第二電極對該待加工板進行單面或雙面電漿製程。 A single-sided or double-sided plasma processing machine, which can perform single-sided or double-sided plasma processing on a to-be-processed board, the to-be-processed board has a first side and a second side, the single-sided or double-sided plasma process Double-sided plasma processing equipment includes: a body having a chamber; a first electrode, arranged in the chamber; a second electrode, disposed in the chamber and facing the first electrode; a control module, which is installed in the body; A displacement device is installed on the body and is electrically connected to the control module. The displacement device has a movable carrier plate, which is arranged between the first electrode and the second electrode for carrying the plate to be processed. , the movable carrier plate is displaced between a single-sided processing position and a double-sided processing position. In the single-sided processing position, the second surface of the plate to be processed is supported on the second electrode and the movable carrier plate , in the double-sided processing position, the movable carrier plate makes the plate to be processed suspended between the first electrode and the second electrode; and A voltage switching module is electrically connected to the control module and an external power source, and selectively switches the external power source, so as to prompt the first electrode and the second electrode to perform single-sided or double-sided switching on the to-be-processed board Surface plasma process.

如請求項1所述之可單面或雙面電漿製程機台，其中，該位移裝置更包括一第一驅動單元及複數個頂撐柱，該活動載板具有一第一中空部及一第一周圍部，該些頂撐柱一端連接於該第一驅動單元，另一端穿伸該第二電極而連接於該第一周圍部，該第一驅動單元驅使該些頂撐柱，而控制該活動載板於該第一電極與該第二電極之間位移。The single-sided or double-sided plasma processing machine as claimed in claim 1, wherein the displacement device further comprises a first driving unit and a plurality of top struts, and the movable carrier plate has a first hollow portion and a a first peripheral part, one end of the top support columns is connected to the first driving unit, and the other end penetrates the second electrode and is connected to the first surrounding part, the first driving unit drives the top support columns, and controls the The movable carrier plate is displaced between the first electrode and the second electrode.

如請求項2所述之可單面或雙面電漿製程機台，其中，該第二電極具有一凹槽，其形狀與該活動載板的外形相符，於該單面加工位置時，該活動載板容設於該凹槽。The single-sided or double-sided plasma processing machine according to claim 2, wherein the second electrode has a groove, the shape of which is consistent with the shape of the movable carrier, and when the single-sided processing position is used, the The movable carrier board is accommodated in the groove.

如請求項3所述之可單面或雙面電漿製程機台，其中，該位移裝置更包括複數個支撐柱與該些頂撐柱平行設置，該些支撐柱一端連接於該第一驅動單元，另一端穿伸該第二電極而對應於該第一中空部並能夠支撐該待加工板。The single-sided or double-sided plasma processing machine according to claim 3, wherein the displacement device further comprises a plurality of support columns arranged in parallel with the top support columns, and one end of the support columns is connected to the first drive the unit, the other end of which penetrates the second electrode and corresponds to the first hollow part and can support the plate to be processed.

如請求項1或4所述之可單面或雙面電漿製程機台，更包括一抵壓裝置，於該雙面加工位置時，該抵壓裝置與該活動載板共同夾設該待加工板。The single-sided or double-sided plasma processing machine as claimed in claim 1 or 4, further comprising a pressing device, when in the double-sided processing position, the pressing device and the movable carrier plate together clamp the to-be-to-be-pressed device. processing board.

如請求項5所述之可單面或雙面電漿製程機台，其中，該抵壓裝置具有一第二驅動單元及一抵壓板，該抵壓板受該第二驅動單元驅使而活動設置於該第一電極與該第二電極之間。The single-sided or double-sided plasma processing machine according to claim 5, wherein the pressing device has a second driving unit and a pressing plate, and the pressing plate is driven by the second driving unit to be movably disposed on the between the first electrode and the second electrode.

如請求項6所述之可單面或雙面電漿製程機台，其中，該抵壓板包括一第二中空部及一第二周圍部，該抵壓裝置更包括複數個穿伸該機體的抵壓桿，該些抵壓桿一端連接於該第二驅動單元，另一端連接於該抵壓板的第二周圍部。The single-sided or double-sided plasma processing machine according to claim 6, wherein the pressing plate includes a second hollow portion and a second peripheral portion, and the pressing device further comprises a plurality of piercings extending through the body. a pressing rod, one end of the pressing rod is connected to the second driving unit, and the other end is connected to the second peripheral part of the pressing plate.

如請求項7所述之可單面或雙面電漿製程機台，更包括複數個緩衝件設於該些抵壓桿與該抵壓板之間。The single-sided or double-sided plasma processing machine according to claim 7, further comprising a plurality of buffers disposed between the pressing rods and the pressing plate.

如請求項8所述之可單面或雙面電漿製程機台，其中，該抵壓板為絕緣材質製成；該緩衝件為彈簧；該活動載板為絕緣材質製成；該抵壓板的面積大於該活動載板的面積。The single-sided or double-sided plasma processing machine according to claim 8, wherein the pressing plate is made of insulating material; the buffer member is a spring; the movable carrier plate is made of insulating material; The area is larger than the area of the movable carrier plate.

如請求項9所述之可單面或雙面電漿製程機台，其中，該單面加工位置時，該第一電極與該第二電極的距離介於50mm至100mm之間。The single-sided or double-sided plasma processing machine according to claim 9, wherein, in the single-sided processing position, the distance between the first electrode and the second electrode is between 50 mm and 100 mm.

如請求項10所述之可單面或雙面電漿製程機台，其中，該第一電極與該第二電極的距離為80mm之間。The single-sided or double-sided plasma processing machine according to claim 10, wherein the distance between the first electrode and the second electrode is between 80 mm.

如請求項10所述之可單面或雙面電漿製程機台，其中，該雙面加工位置時，該活動載板至該第一電極的距離介於25mm至50mm之間，該活動載板至該第二電極的距離介於25mm至50mm之間。The single-sided or double-sided plasma processing machine according to claim 10, wherein, in the double-sided processing position, the distance from the movable carrier plate to the first electrode is between 25 mm and 50 mm, and the movable carrier The distance from the plate to the second electrode is between 25mm and 50mm.