TWI750592B - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing method Download PDFInfo
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- TWI750592B TWI750592B TW109105310A TW109105310A TWI750592B TW I750592 B TWI750592 B TW I750592B TW 109105310 A TW109105310 A TW 109105310A TW 109105310 A TW109105310 A TW 109105310A TW I750592 B TWI750592 B TW I750592B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H01L21/31105—Etching inorganic layers
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Abstract
Description
本發明係關於一種基板處理裝置及基板處理方法。The present invention relates to a substrate processing apparatus and a substrate processing method.
已知如半導體裝置及液晶顯示裝置之電子零件中使用之基板藉由基板處理裝置進行處理。基板處理裝置藉由浸漬於處理槽內之處理液，將基板進行處理(例如參照專利文獻1)。It is known that substrates used in electronic parts such as semiconductor devices and liquid crystal display devices are processed by a substrate processing apparatus. The substrate processing apparatus processes the substrate by the processing liquid immersed in the processing tank (for example, refer to Patent Document 1).
專利文獻1之基板處理裝置具備氣泡產生器。於氣泡產生器形成吐出口。專利文獻1之基板處理裝置於利用磷酸水溶液將基板進行處理時，自氣泡產生器之吐出口向磷酸水溶液中噴出混合氣體，產生氣泡，將磷酸水溶液進行通氣攪拌。 [先前技術文獻] [專利文獻]The substrate processing apparatus of Patent Document 1 includes a bubble generator. A discharge port is formed in the bubble generator. In the substrate processing apparatus of Patent Document 1, when a substrate is processed with a phosphoric acid aqueous solution, a mixed gas is ejected into the phosphoric acid aqueous solution from the discharge port of the bubble generator to generate air bubbles, and the phosphoric acid aqueous solution is aerated and stirred. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本專利特開2018-56258號公報[Patent Document 1] Japanese Patent Laid-Open No. 2018-56258
(發明所欲解決之問題)(The problem that the invention intends to solve)
然而，於專利文獻1之基板處理裝置中，存在因吐出口之表面張力之影響導致氣泡某種程度變大後，將氣泡供給至磷酸水溶液中之情形。又，存在欲使磷酸水溶液中產生之氣泡變小之需求。其原因在於氣泡較小則氣泡對基板之表面附近之磷酸水溶液(處理液)之攪拌程度變大，因此，能夠有效地將與基板之表面接觸之磷酸水溶液置換為新鮮之磷酸水溶液。However, in the substrate processing apparatus of Patent Document 1, after the air bubbles are enlarged to some extent due to the influence of the surface tension of the discharge port, the air bubbles may be supplied to the phosphoric acid aqueous solution. In addition, there is a need to reduce the size of the air bubbles generated in the phosphoric acid aqueous solution. The reason for this is that when the bubbles are small, the degree of agitation of the phosphoric acid aqueous solution (processing solution) near the surface of the substrate increases, so that the phosphoric acid aqueous solution in contact with the surface of the substrate can be effectively replaced with a fresh phosphoric acid aqueous solution.
本發明之目的在於提供一種能夠抑制供給至處理液之氣泡變大之基板處理裝置及基板處理方法。 (解決問題之技術手段)An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of suppressing the increase of air bubbles supplied to the processing liquid. (Technical means to solve problems)
根據本發明之第1態樣，基板處理裝置將基板浸漬於貯存部中貯存之作為處理液之貯存處理液，進行上述基板之處理。基板處理裝置具備氣泡供給部及液流生成部。氣泡供給部向上述貯存處理液供給氣泡。液流生成部對上述氣泡供給部生成上述貯存處理液之液流。According to the first aspect of the present invention, the substrate processing apparatus performs the above-mentioned processing of the substrate by immersing the substrate in the storage processing liquid as the processing liquid stored in the storage section. The substrate processing apparatus includes a bubble supply unit and a liquid flow generation unit. The air bubble supply unit supplies air bubbles to the stored treatment liquid. The liquid flow generation unit generates the liquid flow of the stored treatment liquid to the bubble supply unit.
於本發明之基板處理裝置中，上述氣泡供給部具有氣體流動之第1管部。於上述第1管部形成配置於上述貯存處理液內之氣泡釋出口。上述氣泡釋出口將上述氣體之氣泡釋出至上述貯存處理液內。上述液流生成部於上述氣泡釋出口之周邊生成上述液流。In the substrate processing apparatus of this invention, the said bubble supply part has the 1st pipe part which gas flows. A bubble releasing port arranged in the above-mentioned storage treatment liquid is formed in the above-mentioned first pipe portion. The air bubble release port releases the air bubbles of the gas into the storage treatment liquid. The liquid flow generating part generates the liquid flow in the periphery of the bubble releasing port.
於本發明之基板處理裝置中，對上述第1管部中形成上述氣泡釋出口之部分實施疏水處理。In the substrate processing apparatus of the present invention, a water-repellent treatment is performed on a portion of the first pipe portion where the air bubble release port is formed.
於本發明之基板處理裝置中，上述液流生成部具有上述處理液進行流動之第2管部。於上述第2管部形成配置於上述貯存處理液內之處理液釋出口。上述處理液釋出口將上述第2管部中流動之上述處理液釋出至上述貯存處理液內，藉此生成上述液流。In the substrate processing apparatus of the present invention, the liquid flow generating section includes a second pipe section through which the processing liquid flows. A treatment liquid discharge port arranged in the storage treatment liquid is formed in the second pipe portion. The processing liquid discharge port discharges the processing liquid flowing in the second pipe portion into the stored processing liquid, thereby generating the liquid flow.
於本發明之基板處理裝置中，上述處理液釋出口自上方觀察配置於上述氣泡釋出口之側方。In the substrate processing apparatus of the present invention, the processing liquid discharge port is disposed on the side of the air bubble discharge port as viewed from above.
於本發明之基板處理裝置中，上述處理液釋出口配置於上述氣泡釋出口之下方。In the substrate processing apparatus of this invention, the said process liquid discharge port is arrange|positioned below the said bubble discharge port.
於本發明之基板處理裝置中，上述氣泡釋出口於橫向開口。In the substrate processing apparatus of the present invention, the air bubble releasing port is opened in a lateral direction.
於本發明之基板處理裝置中，上述第1管部具有內面及外表面。內面與上述第1管部之內部對向。外表面與上述第1管部之外部對向。上述氣泡釋出口具有外側開口及內側開口。外側開口形成於上述外表面。內側開口形成於上述內面，且連通於上述外側開口。上述外側開口之開口面積小於上述內側開口之開口面積。In the substrate processing apparatus of this invention, the said 1st pipe part has an inner surface and an outer surface. The inner surface faces the inside of the first pipe portion. The outer surface faces the outside of the first pipe portion. The air bubble release port has an outer opening and an inner opening. An outer opening is formed on the outer surface. The inner opening is formed on the inner surface, and communicates with the outer opening. The opening area of the outer opening is smaller than the opening area of the inner opening.
根據本發明之第2態樣，基板處理裝置將基板浸漬於貯存貯存部中作為處理液之貯存處理液，進行上述基板之處理。基板處理裝置具備氣泡供給部及移動部。氣泡供給部向上述貯存處理液供給氣泡。移動部使上述氣泡供給部相對於上述貯存部移動。According to the second aspect of the present invention, the substrate processing apparatus performs the above-described processing of the substrate by immersing the substrate in the storage processing liquid as the processing liquid in the storage storage section. The substrate processing apparatus includes a bubble supply unit and a moving unit. The air bubble supply unit supplies air bubbles to the stored treatment liquid. A moving part moves the said bubble supply part with respect to the said storage part.
於本發明之基板處理裝置中，上述氣泡供給部具有氣體流動之第1管部。於上述第1管部形成配置於上述貯存處理液內之氣泡釋出口。上述氣泡釋出口將上述氣體之氣泡釋出至上述貯存處理液內。上述移動部使上述第1管部相對於上述貯存部移動。In the substrate processing apparatus of this invention, the said bubble supply part has the 1st pipe part which gas flows. A bubble releasing port arranged in the above-mentioned storage treatment liquid is formed in the above-mentioned first pipe portion. The air bubble release port releases the air bubbles of the gas into the storage treatment liquid. The said moving part moves the said 1st pipe part with respect to the said storage part.
於本發明之基板處理裝置中，上述移動部使上述第1管部振動。In the substrate processing apparatus of this invention, the said moving part vibrates the said 1st tube part.
於本發明之基板處理裝置中，上述氣泡供給部包含聚醚醚酮。In the substrate processing apparatus of this invention, the said bubble supply part contains polyether ether ketone.
根據本發明之第3態樣，基板處理方法將基板浸漬於貯存在貯存部中作為處理液之貯存處理液，進行上述基板之處理。基板處理方法具備將形成於管部之氣泡釋出口配置於上述貯存處理液內之步驟。基板處理方法具備使氣體流向上述管部之步驟。基板處理方法具備賦予剪力之步驟，該剪力係用以自上述管部之內部中存在之上述氣體剪切上述氣體中自上述氣泡釋出口向上述貯存處理液內***之***部分。 (對照先前技術之功效)According to the third aspect of the present invention, the substrate processing method performs the above-mentioned processing of the substrate by immersing the substrate in the storage processing liquid stored in the storage section as the processing liquid. The substrate processing method includes the step of arranging the air bubble release port formed in the pipe portion in the above-mentioned storage processing liquid. The substrate processing method includes the step of flowing a gas to the above-mentioned pipe portion. The substrate processing method includes a step of imparting a shear force for shearing a raised portion in the gas from the gas bubble release port into the storage treatment liquid from the gas existing in the pipe portion. (Compared to the efficacy of the prior art)
根據本發明之基板處理裝置及基板處理方法，能夠抑制供給至處理液之氣泡變大。According to the substrate processing apparatus and the substrate processing method of the present invention, it is possible to suppress the increase of air bubbles supplied to the processing liquid.
一面參照圖式，一面對本發明之實施形態進行說明。再者，圖中對於相同或相符部分標註相同之參照符號，不再重複說明。再者，於本案說明書中，存在為了便於理解發明而記載相互正交之X軸、Y軸及Z軸之情形。典型而言，X軸及Y軸與水平方向平行，Z軸與鉛直方向平行。Embodiments of the present invention will be described with reference to the drawings. Furthermore, in the drawings, the same or corresponding parts are marked with the same reference symbols, and the description will not be repeated. In addition, in this specification, in order to facilitate understanding of invention, there are cases where the X axis, the Y axis, and the Z axis which are orthogonal to each other are described. Typically, the X axis and the Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.
[第1實施形態]
參照圖1，對本發明之第1實施形態之基板處理裝置100進行說明。圖1係本發明之第1實施形態之基板處理裝置100之示意圖。基板處理裝置100一次性處理數片基板W。例如，基板處理裝置100對數片基板W一次性進行蝕刻。[1st Embodiment]
1, a
基板W係較薄之板狀。典型而言，基板W係較薄之大致圓板狀。基板W例如包含半導體晶圓、液晶顯示裝置用基板、場發射顯示器(Field Emission Display：FED)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板及太陽電池用基板。The substrate W is a thin plate. Typically, the substrate W is thin and generally disc-shaped. The substrate W includes, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for Field Emission Displays (FEDs), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for masks, ceramic substrates, and solar panels. Substrates for batteries.
基板處理裝置100對基板W進行處理。基板處理裝置100藉由處理液L集中地處理數片基板W。藉由處理液L，對基板W進行蝕刻、表面處理、特性賦予、處理膜形成、膜之至少一部分之去除及洗淨中之至少1種。The
基板處理裝置100具備處理槽110、基板保持部120、氣泡供給部130、及控制部140。處理槽110貯存處理液L。The
處理槽110包含內槽112、外槽114、及調節部112a。處理槽110具有包含內槽112及外槽114之雙槽構造。內槽112及外槽114分別具有向上開啟之開口。內槽112構成為貯存處理液L且可收容數片基板W。外槽114設置於內槽112之開口之外側。外槽114之上緣之高度較內槽112之上緣之高度高。The
內槽112係本發明之貯存部之一例。以下，存在將貯存於內槽112之處理液L記載為貯存處理液L1之情形。The
於內槽112設置調節部112a。調節部112a於處理基板W時之基板W之X方向兩端部，以與1片基板W之兩主面對向之方式設置。藉由調節部112a調節基板W之位置。因此，基板W於既定之位置均一地進行處理。An adjusting
處理槽110具有蓋116。蓋116可相對於內槽112之開口進行開關。藉由關閉蓋116，蓋116能夠阻塞內槽112之開口。The
蓋116具有開啟部116a及開啟部116b。開啟部116a位於內槽112之開口中之-X方向側。開啟部116a配置於內槽112之上緣附近，且可相對於內槽112之開口進行開關。開啟部116b位於內槽112之開口中之+X方向側。開啟部116b配置於內槽112之上緣附近，且可相對於內槽112之開口進行開關。藉由開啟部116a及開啟部116b關閉，將內槽112之開口蓋住，便可阻塞處理槽110之內槽112。The
於內槽112之底壁連接有排液配管118a。於排液配管118a配置閥118b。閥118b藉由控制部140而開關。藉由閥118b開啟，貯存處理液L1通過排液配管118a排出至內槽112之外部後，輸送至排液處理裝置(未圖示)進行處理。A
基板保持部120係保持基板W。基板保持部120包含升降機。基板保持部120將數片基板W一次性保持而浸漬於貯存處理液L1。再者，基板保持部120亦可僅保持1片基板W而浸漬於貯存處理液L1。The
基板保持部120包含本體板122及保持棒124。本體板122係於鉛直方向(Z方向)上延伸之板。保持棒124自本體板122之一主面以水平方向(Y方向)延伸。於第1實施形態中，3個保持棒124自本體板122之一主面以Y方向延伸。數片基板W係以於紙面之內外方向上排列有數片基板W之狀態，藉由數個保持棒124以立起姿勢(鉛直姿勢)保持各基板W之下緣。The
基板保持部120亦可更包含升降單元126。升降單元126使本體板122於由基板保持部120保持之基板W位於內槽112內之處理位置(圖10所示之位置)與由基板保持部120保持之基板W位於內槽112之上方之退避位置(未圖示)之間進行升降。因此，藉由利用升降單元126使本體板122移動至處理位置，而將由保持棒124保持之數片基板W浸漬於貯存處理液L1。藉此，實施對基板W之蝕刻處理。The
氣泡供給部130向貯存處理液L1供給氣泡。The air
氣泡供給部130包含氣體供給管131。氣體供給管131係管狀構件。氣體供給管131例如由石英形成。氣體供給管131配置於內槽112內。氣體供給管131浸漬於貯存處理液L1中。於氣泡供給部130之外部存在貯存處理液L1。The
於氣體供給管131之內部流入氣體。氣體係例如惰性氣體。氣體例如包含氮氣。氣體亦可為空氣。The gas flows into the inside of the
於氣體供給管131形成氣泡釋出口M。氣泡釋出口M係將氣體供給管131之內部與外部連通之孔。氣泡釋出口M藉由浸漬於貯存處理液L1中而配置於貯存處理液L1內。A bubble release port M is formed in the
於氣體供給管131之內部流動之氣體經由氣泡釋出口M釋出至貯存處理液L1內。於氣體供給管131之內部流動之氣體自氣泡釋出口M釋出時成為氣泡。其結果，氣泡自氣泡釋出口M釋出至貯存處理液L1內。The gas flowing in the
氣體供給管131係本發明之第1管部之一例。The
自氣泡釋出口M供給至貯存處理液L1內之氣泡於貯存處理液L1內上浮而到達貯存處理液L1之上表面。The air bubbles supplied from the bubble release port M into the storage processing liquid L1 float up in the storage processing liquid L1 and reach the upper surface of the storage processing liquid L1.
氣泡於貯存處理液L1中上浮之時，氣泡與基板W之表面接觸。於此情形時，氣泡一面擠壓貯存處理液L1中之與基板W之接觸部分，一面於基板W之表面朝向上方移動。於氣泡通過後，存在於氣泡周圍之新鮮之處理液L藉由進入氣泡曾存在之部位而與基板W之表面接觸。因此，能夠藉由氣泡攪拌基板W之表面之周圍之處理液L，因此，能夠將與基板W之表面接觸之處理液L置換為新鮮之處理液L。其結果，能夠提昇基板W之處理速度。When the air bubbles float in the storage processing liquid L1, the air bubbles come into contact with the surface of the substrate W. As shown in FIG. In this case, the air bubbles move upward on the surface of the substrate W while squeezing the contact portion with the substrate W in the stored processing liquid L1. After the passage of the air bubbles, the fresh processing liquid L existing around the air bubbles comes into contact with the surface of the substrate W by entering the part where the air bubbles once existed. Therefore, since the processing liquid L around the surface of the substrate W can be stirred by the air bubbles, the processing liquid L in contact with the surface of the substrate W can be replaced with fresh processing liquid L. As a result, the processing speed of the substrate W can be improved.
控制部140係例如使用微電腦而構成。控制部140具有如中央處理單元(CPU，Central Processing Unit)之類處理機、及如固定記憶體裝置或硬碟驅動器之類記憶裝置。於記憶裝置中記憶有藉由處理機執行之程式。控制部140之處理機藉由執行記憶裝置中記憶之程式而控制基板處理裝置100之各要素。The
控制部140之處理機藉由控制氣泡供給部130，而控制氣泡供給部130所進行之氣泡之供給。控制部140之處理機控制氣泡供給部130所進行之氣泡供給之開始及停止。The processor of the
基板處理裝置100更具備氣體搬送部150及循環部160。The
氣體搬送部150將氣體搬送至氣體供給管131之內部。The
氣體搬送部150具備配管152、閥154、及調整閥156。閥154及調整閥156配置於配管152。配管152連結於氣體供給管131。配管152將氣體導入至氣體供給管131之內部。閥154係開關配管152。藉由調整閥156而調節配管152之開度，調整搬送至氣體供給管131之內部之氣體之流量。The
循環部160藉由使貯存處理液L1循環而生成貯存處理液L1之液流。循環部160係本發明之液流生成部之一例。The
循環部160包含配管161、泵162、過濾器163、加熱器164、調整閥165、閥166、及處理液供給管167。The
配管161將自外槽114排出之處理液L導入至內槽112。於配管161之下游端連接處理液供給管167。The piping 161 introduces the processing liquid L discharged from the
泵162將處理液L自配管161輸送至處理液供給管167之內部。過濾器163將配管161中流動之處理液L進行過濾。加熱器164將配管161中流動之處理液L進行加熱。藉由加熱器164調整處理液L之溫度。The
藉由調整閥165調節配管161之開度，調整供給至處理液供給管167之內部之處理液L之流量。調整閥165調整處理液L之流量。調整閥165包含內部設置有閥座之閥身(未圖示)、開關閥座之閥體、及使閥體於開啟位置與關閉位置之間移動之致動器(未圖示)。其他調整閥亦相同。閥166開關配管161。The opening degree of the piping 161 is adjusted by the
處理液供給管167係管狀構件。處理液供給管167配置於處理槽110之內槽112內。處理液供給管167浸漬於貯存處理液L1。於處理液供給管167之外部存在貯存處理液L1。The processing
於處理液供給管167形成處理液釋出口N。處理液釋出口N係將處理液供給管167之內部與外部連通之孔。處理液釋出口N藉由浸漬於貯存處理液L1而配置於貯存處理液L1內。A treatment liquid discharge port N is formed in the treatment
處理液供給管167之內部中流動之處理液L經由處理液釋出口N釋出至處理液供給管167之外部。其結果，將處理液供給管167之內部中流動之處理液L自處理液釋出口N釋出至貯存處理液L1內。The processing liquid L flowing in the processing
處理液供給管167係本發明之第2管部之一例。The processing
再者，亦可省略調整閥165。於此情形時，供給至處理液供給管167之處理液L之流量藉由泵162之控制進行調整。Furthermore, the
基板處理裝置100更具備處理液供給部170及水供給部180。The
處理液供給部170更包含噴嘴172、配管174、及閥176。噴嘴172將處理液L吐出至內槽112。噴嘴172連接於配管174。向配管174供給來自處理液供給源之處理液L。於配管174配置閥176。The processing
當控制部140開啟閥176時，自噴嘴172吐出之處理液L供給至內槽112內。繼而，當處理液L自內槽112之上緣溢出時，溢出之處理液L由外槽114接收進行回收。When the
水供給部180將水供給至外槽114。水供給部180包含噴嘴182、配管184、及閥186。噴嘴182將水吐出至外槽114。噴嘴182連接於配管184。供給至配管184之水可採用DIW(Deionized water，去離子水)、碳酸水、電解離子水、氫水、臭氧水及稀釋濃度(例如10 ppm～100 ppm左右)之鹽酸水中之任一者。向配管184供給來自水供給源之水。於配管184配置閥186。當控制部140開啟閥186時，自噴嘴182吐出之水供給至外槽114內。The
例如，基板處理裝置100對包括矽基板之基板W之圖案形成側之表面，實施氧化矽膜(氧化膜)及氮化矽膜(氮化膜)之蝕刻處理。於此種蝕刻處理中，自基板W之表面選擇性地去除氧化膜及氮化膜。處理液L係例如包含磷酸之液體。再者，處理液L亦可為包含混合酸之液體。For example, the
繼而，參照圖1～圖3(b)，對基板處理裝置100處理基板W之處理方法進行說明。圖2係表示本實施形態之基板W之處理方法之流程圖。圖3(a)係表示基板W浸漬於貯存處理液L1前之狀態之圖。圖3(b)係表示基板W已浸漬於貯存處理液L1中之狀態之圖。Next, with reference to FIGS. 1-3(b), the processing method of the board|substrate W by the board|
如圖1及圖2所示，於S101中，循環部160開始進行處理液L之循環。控制部140開啟閥166，藉此，使處理液L依次流向內槽112、外槽114、配管161、及處理液供給管167。自配管161供給至處理液供給管167之內部之處理液L自處理液釋出口N釋出至貯存處理液L1內。其結果，處理液L進行循環。As shown in FIGS. 1 and 2 , in S101 , the
如圖2、圖3(a)及圖3(b)所示，於S102中，升降單元126使基板W由本體板122及保持棒124保持著下降，藉此，將基板W浸漬於貯存處理液L1。As shown in FIGS. 2 , 3( a ) and 3 ( b ), in S102 , the
如圖1及圖2所示，於S103中，氣泡供給部130開始進行將氣泡供給至貯存處理液L1內之處理。藉由控制部140開啟閥154而將氣泡自氣體供給管131之氣泡釋出口M釋出至貯存處理液L1內。As shown in FIGS. 1 and 2 , in S103 , the air
於S104中，控制部140關閉閥154，藉此，結束氣泡供給部130所進行之氣泡之供給處理。In S104 , the
於S105中，升降單元126使本體板122及保持棒124保持著基板W而上升，藉此，將基板W自貯存處理液L1內取出。其結果，結束對基板W之處理。In S105 , the
繼而，參照圖1及圖4，對氣體供給管131及處理液供給管167進行說明。Next, the
如圖1所示，基板處理裝置100包含配管群G1。配管群G1包括氣體供給管131及一對處理液供給管167。於第1實施形態中，設置數個配管群G1。具體而言，設置2個配管群G1。2個配管群G1以虛擬中心線CL為中心對稱地配置。虛擬中心線CL係通過內槽112之中心且與Z軸平行之虛擬線。As shown in FIG. 1 , the
圖4係自Z軸方向觀察配管群G1所得之圖。FIG. 4 is a view of the piping group G1 viewed from the Z-axis direction.
如圖1及圖4所示，氣體供給管131與處理液供給管167配置於內槽112之底部12a(參照圖5)。氣體供給管131與處理液供給管167位於較浸漬於貯存處理液L1之基板W更靠下方。氣體供給管131與處理液供給管167各自沿Y軸方向延伸。As shown in FIGS. 1 and 4 , the
於氣體供給管131形成數個氣泡釋出口M。數個氣泡釋出口M係沿Y軸方向排列。氣體供給管131之內徑例如為約1 mm以下。氣泡釋出口M之內徑例如為約5 mm以下。A plurality of bubble release ports M are formed in the
於處理液供給管167形成數個處理液釋出口N。數個處理液釋出口N沿著Y軸方向排列。處理液供給管167之內徑例如為約30 mm以下。處理液釋出口N之內徑例如為約2 mm以下。A plurality of treatment liquid discharge ports N are formed in the treatment
於配管群G1中，氣體供給管131與一對處理液供給管167相互平行地配置。於配管群G1中，氣體供給管131與一對處理液供給管167沿X軸方向排列。於配管群G1中，於一對處理液供給管167之間配置氣體供給管131。一對處理液供給管167隔著氣體供給管131配置。In the piping group G1, the
繼而，參照圖4及圖5，對氣泡釋出口M與處理液釋出口N之位置關係之第1例進行說明。圖5係表示氣泡釋出口M與處理液釋出口N之位置關係之第1例之圖。Next, a first example of the positional relationship between the bubble release port M and the treatment liquid release port N will be described with reference to FIGS. 4 and 5 . FIG. 5 is a diagram showing a first example of the positional relationship between the bubble discharge port M and the treatment liquid discharge port N. FIG.
以下，著眼於2個配管群G1中之1個即配管群G11進行說明。又，著眼於數個氣泡釋出口M中之1個即氣泡釋出口M1與數個處理液釋出口N中之1個即處理液釋出口N1進行說明。Hereinafter, the description will be made focusing on the piping group G11 which is one of the two piping groups G1. Moreover, it demonstrates focusing on the bubble release port M1 which is one of the several bubble release ports M, and the process liquid release port N1 which is one of the several process liquid release ports N.
如圖4及圖5所示，於配管群G11中，於一對處理液供給管167分別形成處理液釋出口N1。處理液釋出口N1配置於處理液供給管167中氣泡釋出口M1所在之側。As shown in FIGS. 4 and 5 , in the piping group G11 , a processing liquid discharge port N1 is formed in each of the pair of processing
於配管群G11中，於氣體供給管131形成氣泡釋出口M1。氣泡釋出口M1配置於氣體供給管131之上端部。In the piping group G11, the
一對處理液釋出口N1彼此空開間隔配置。於一對處理液釋出口N1之間配置氣泡釋出口M1。自Z軸方向觀察(自上方觀察)，於處理液釋出口N1之側方配置氣泡釋出口M1。A pair of processing liquid discharge ports N1 are mutually arrange|positioned at intervals. A bubble discharge port M1 is arranged between the pair of treatment liquid discharge ports N1. Viewed from the Z-axis direction (viewed from above), the air bubble discharge port M1 is arranged on the side of the processing liquid discharge port N1.
一對處理液釋出口N1各自朝向第1方向D1開口。第1方向D1係自處理液供給管167之中心T1朝向氣體供給管131之方向。詳細而言，第1方向D1係自處理液供給管167之中心T1朝向氣體供給管131之氣泡釋出口M1之方向。處理液供給管167之中心T1係於相對處理液供給管167延伸之方向(Y軸方向)垂直之方向上切斷處理液供給管167中處理液釋出口N1所在之位置時形成之處理液供給管167之剖面之中心。Each of the pair of processing liquid discharge ports N1 is opened toward the first direction D1. The first direction D1 is a direction from the center T1 of the processing
繼而，參照圖5～圖7，對自氣體供給管131之氣泡釋出口M1釋出氣泡KA之原理進行說明。圖6(a)係表示自氣泡釋出口M1釋出氣泡KA之原理之第1示意圖。圖6(b)係表示自氣泡釋出口M1釋出氣泡KA之原理之第2示意圖。圖7係表示自氣泡釋出口M1釋出氣泡KA之原理之第3示意圖。Next, the principle of releasing the air bubbles KA from the air bubble releasing port M1 of the
如圖5及圖6(a)所示，一對處理液釋出口N1各自朝向第1方向D1開口，因此，以第1方向D1釋出處理液L。其結果，以自一對處理液釋出口N1之各者朝向第1方向D1之方式，生成貯存處理液L1之第1液流R1。As shown in FIGS. 5 and 6( a ), each of the pair of processing liquid discharge ports N1 is opened in the first direction D1 , so that the processing liquid L is discharged in the first direction D1 . As a result, the first liquid flow R1 in which the processing liquid L1 is stored is generated so as to face the first direction D1 from each of the pair of processing liquid discharge ports N1.
第1液流R1因朝向第1方向D1生成，故而，朝向氣泡釋出口M1後，於氣泡釋出口M1之周邊流動。Since the first liquid flow R1 is generated toward the first direction D1, it flows toward the bubble release port M1 and then flows around the bubble release port M1.
如圖5及圖6(b)所示，於貯存處理液L1內產生氣體K之***部分KI。***部分KI係供給至氣體供給管131之氣體K中自氣泡釋出口M1向貯存處理液L1內***之部分。第1液流R1流向***部分KI之周邊。於第1實施形態中，***部分KI位於一對第1液流R1之間。As shown in FIG. 5 and FIG. 6( b ), the raised portion KI of the gas K is generated in the stored processing liquid L1 . The bulging portion KI is a bulging portion of the gas K supplied to the
***部分KI受到於氣泡釋出口M1之周邊流動之第1液流R1之壓力。其結果，容易自氣體供給管131之內部存在之氣體K剪切(分離)***部分KI。The raised portion KI is subjected to the pressure of the first liquid flow R1 flowing around the bubble release port M1. As a result, the raised portion KI is easily sheared (separated) from the gas K existing inside the
第1液流R1之流動產生之壓力係本發明之剪力之第1例。The pressure generated by the flow of the first liquid stream R1 is the first example of the shear force of the present invention.
如圖5及圖7所示，***部分KI受到剪切後成為氣泡KA。氣泡KA於貯存處理液L1內上浮。As shown in FIGS. 5 and 7 , the bulge portion KI is sheared and becomes a bubble KA. The air bubbles KA float in the storage treatment liquid L1.
以上，如參照圖1～圖7所說明，循環部160藉由自處理液供給管167之處理液釋出口N1釋出處理液L，而對於氣泡供給部130生成貯存處理液L1之第1液流R1。因此，如圖6(b)所示，能夠使第1液流R1之壓力作用於成長中之***部分KI。其結果，能夠早期地剪切成長中之***部分KI，因此能夠抑制氣泡KA變大。As described above with reference to FIGS. 1 to 7 , the
又，藉由早期地剪切***部分KI，能夠增加每一單位時間中生成之氣泡KA之個數。其結果，能夠使用大量較小之氣泡KA迅速地進行基板W之處理。In addition, by cutting the raised portion KI early, the number of air bubbles KA generated per unit time can be increased. As a result, the processing of the substrate W can be rapidly performed using a large number of small air bubbles KA.
[第2實施形態]
參照圖8，對本發明之第2實施形態之基板處理裝置100進行說明。圖8係表示氣泡釋出口M與處理液釋出口N之位置關係之第2例之圖。[Second Embodiment]
8, a
第2實施形態之處理液釋出口N1開口之方向與第1實施形態不同。以下，主要對與第1實施形態之不同點進行說明。又，著眼於配管群G11進行說明。The direction of the opening of the treatment liquid discharge port N1 of the second embodiment is different from that of the first embodiment. Hereinafter, differences from the first embodiment will be mainly described. Moreover, it demonstrates focusing on the piping group G11.
如圖8所示，自Z軸方向觀察，於處理液釋出口N1之側方配置氣泡釋出口M1。As shown in FIG. 8, the bubble discharge port M1 is arrange|positioned at the side of the process liquid discharge port N1, seeing from the Z-axis direction.
一對處理液釋出口N1各自配置於處理液供給管167之下端側。一對處理液釋出口N1各自朝向第2方向D2開口。第2方向D2係自處理液供給管167之中心T1朝向內槽112之底部12a，且於內槽112之底部12a反射後，朝向氣體供給管131之方向。The pair of processing liquid discharge ports N1 are respectively arranged on the lower end side of the processing
一對處理液釋出口N1各自朝向第2方向D2開口，因此，以第2方向D2釋出處理液L。其結果，以自一對處理液釋出口N1之各者朝向第2方向D2之方式，生成貯存處理液L1之第2液流R2。Since each of the pair of processing liquid discharge ports N1 is opened in the second direction D2, the processing liquid L is discharged in the second direction D2. As a result, the second liquid flow R2 for storing the processing liquid L1 is generated so as to face the second direction D2 from each of the pair of processing liquid discharge ports N1.
第2液流R2藉由朝向第2方向D2生成而朝向內槽112之底部12a，且於內槽112之底部12a反射後，朝向氣體供給管131。到達氣體供給管131之第2液流R2沿著氣體供給管131之外周流動。繼而，第2液流R2於流經氣泡釋出口M1之周邊後，通過氣體供給管131。The second liquid flow R2 is generated toward the second direction D2 and is directed toward the
氣泡釋出口M1之周邊中流動之第2液流R2對氣體K之***部分KI(參照圖6(b))賦予第2液流R2之流動產生之壓力。因此，能夠藉由第2液流R2之壓力，早期地剪切成長中之***部分KI。其結果，能夠抑制氣泡KA變大。The second liquid flow R2 flowing in the periphery of the bubble release port M1 applies the pressure generated by the flow of the second liquid flow R2 to the raised portion KI of the gas K (refer to FIG. 6( b )). Therefore, the growing protuberance KI can be sheared at an early stage by the pressure of the second liquid flow R2. As a result, it is possible to suppress the enlargement of the air bubbles KA.
第2液流R2之流動產生之壓力係本發明之剪力之第2例。The pressure generated by the flow of the second liquid stream R2 is the second example of the shear force of the present invention.
[第3實施形態]
參照圖9，對本發明之第3實施形態之基板處理裝置100進行說明。圖9係表示氣泡釋出口M與處理液釋出口N之位置關係之第3例之圖。[third embodiment]
Referring to FIG. 9, a
第3實施形態係處理液供給管167相對於氣體供給管131之位置與第1實施形態不同。以下，主要對與第1實施形態之不同點進行說明。又，著眼於配管群G11而進行說明。The third embodiment is different from the first embodiment in the position of the processing
如圖9所示，於第3實施形態中，配管群G1包括1個氣體供給管131及1個處理液供給管167。處理液供給管167配置於氣體供給管131之下方。As shown in FIG. 9 , in the third embodiment, the piping group G1 includes one
處理液釋出口N1配置於氣泡釋出口M1之下方。處理液釋出口N1配置於處理液供給管167之上端側。處理液釋出口N1朝向第3方向D3開口。第3方向D3係自處理液供給管167之中心T1朝向氣體供給管131之方向。於第3實施形態中，第3方向D3為上方向。The processing liquid discharge port N1 is arranged below the air bubble discharge port M1. The processing liquid discharge port N1 is arranged on the upper end side of the processing
處理液釋出口N1朝向第3方向D3開口，故於第3方向D3釋出處理液L。其結果，以自處理液釋出口N1朝向第3方向D3之方式，生成貯存處理液L1之第3液流R3。Since the processing liquid discharge port N1 is opened toward the third direction D3, the processing liquid L is discharged in the third direction D3. As a result, the third liquid flow R3 storing the processing liquid L1 is generated so as to face the third direction D3 from the processing liquid discharge port N1.
第3液流R3因朝向第3方向D3生成而朝向氣體供給管131。到達氣體供給管131之第3液流R3沿著氣體供給管131之外周流動。繼而，第3液流R3於流經氣泡釋出口M1之周邊後，通過氣體供給管131。再者，第3液流R3於到達氣體供給管131後分離成為一對第3液流R3，且一對第3液流R3隔著氣體供給管131，沿氣體供給管131之外周流動。The third liquid flow R3 is generated toward the third direction D3 and is directed toward the
氣泡釋出口M1之周邊中流動之第3液流R3對氣體K之***部分KI(參照圖6(b))賦予第3液流R3之流動產生之壓力。因此，能夠藉由第3液流R3之壓力，早期地剪切成長中之***部分KI。其結果，能夠抑制氣泡KA變大。The third liquid flow R3 flowing in the periphery of the bubble release port M1 applies the pressure generated by the flow of the third liquid flow R3 to the raised portion KI of the gas K (see FIG. 6( b )). Therefore, the growing raised portion KI can be sheared at an early stage by the pressure of the third liquid flow R3. As a result, it is possible to suppress the enlargement of the air bubbles KA.
第3液流R3之流動產生之壓力係本發明之剪力之第3例。The pressure generated by the flow of the third liquid stream R3 is the third example of the shear force of the present invention.
[第4實施形態]
參照圖10，對本發明之第4實施形態之基板處理裝置100進行說明。圖10係表示氣泡釋出口M與處理液釋出口N之位置關係之第4例之圖。[4th Embodiment]
10, a
第4實施形態係處理液供給管167相對於氣體供給管131之位置與第1實施形態不同。以下，主要對與第1實施形態之不同點進行說明。又，著眼於配管群G11進行說明。The fourth embodiment is different from the first embodiment in the position of the processing
如圖10所示，一對處理液供給管167於氣體供給管131之下方彼此空開間隔配置。As shown in FIG. 10 , a pair of processing
自Z軸方向觀察，於處理液釋出口N1之側方配置氣泡釋出口M1。Viewed from the Z-axis direction, the air bubble discharge port M1 is arranged on the side of the processing liquid discharge port N1.
一對處理液釋出口N1各自配置於處理液供給管167之上端側。處理液釋出口N1朝向第4方向D4開口。第4方向D4係自處理液供給管167之中心T1朝向氣體供給管131之方向。於第4實施形態中，第4方向D4為斜上方向。The pair of processing liquid discharge ports N1 are respectively arranged on the upper end side of the processing
一對處理液釋出口N1各自朝向第4方向D4開口，因此，以第4方向D4釋出處理液L。其結果，以自一對處理液釋出口N1之各者朝向第4方向D4之方式，生成貯存處理液L1之第4液流R4。Since each of the pair of processing liquid discharge ports N1 is opened in the fourth direction D4, the processing liquid L is discharged in the fourth direction D4. As a result, the fourth liquid flow R4 storing the processing liquid L1 is generated so as to face the fourth direction D4 from each of the pair of processing liquid discharge ports N1.
第4液流R4因朝向第4方向D4生成而朝向氣體供給管131。到達氣體供給管131之第4液流R4沿著氣體供給管131之外周流動。繼而，第4液流R4於流經氣泡釋出口M1之周邊後，通過氣體供給管131。The fourth liquid flow R4 is generated toward the fourth direction D4 and is directed toward the
氣泡釋出口M1之周邊中流動之第4液流R4對氣體K之***部分KI(參照圖6(b))賦予第4液流R4之流動產生之壓力。因此，能夠藉由第4液流R4之壓力，早期地剪切成長中之***部分KI。其結果，能夠抑制氣泡KA變大。The fourth liquid flow R4 flowing in the periphery of the bubble release port M1 applies the pressure generated by the flow of the fourth liquid flow R4 to the raised portion KI of the gas K (see FIG. 6( b )). Therefore, the growing protuberance KI can be sheared at an early stage by the pressure of the fourth liquid flow R4. As a result, it is possible to suppress the enlargement of the air bubbles KA.
第4液流R4之流動產生之壓力係本發明之剪力之第4例。The pressure generated by the flow of the fourth liquid stream R4 is the fourth example of the shear force of the present invention.
[第5實施形態]
參照圖11，對本發明之第5實施形態之基板處理裝置100進行說明。圖11係表示氣泡釋出口M與處理液釋出口N之位置關係之第5例之圖。[Fifth Embodiment]
11, a
第5實施形態係處理液L自處理液供給管167以數個方向釋出不同於第1實施形態。以下，主要對與第1實施形態之不同點進行說明。又，著眼於配管群G11進行說明。The fifth embodiment differs from the first embodiment in that the treatment liquid L is discharged from the treatment
如圖11所示，於一對處理液供給管167之各者形成數個處理液釋出口N。於第3實施形態中，於一對處理液供給管167之各者形成3個處理液釋出口N。3個處理液釋出口N包括處理液釋出口N1、處理液釋出口N2、及處理液釋出口N3。As shown in FIG. 11 , a plurality of treatment liquid discharge ports N are formed in each of the pair of treatment
處理液釋出口N1相當於圖5所示之處理液釋出口N1，且朝向第1方向D1開口。其結果，藉由處理液釋出口N1生成第1液流R1，因此，實現與第1實施形態相同之效果。The processing liquid discharge port N1 corresponds to the processing liquid discharge port N1 shown in FIG. 5 , and is opened in the first direction D1. As a result, since the 1st liquid flow R1 is produced|generated by the process liquid discharge port N1, the same effect as 1st Embodiment is achieved.
處理液釋出口N2朝向與第1方向D1不同之第6方向D6開口，藉此，以自處理液釋出口N2朝向第6方向D6之方式，生成貯存處理液L1之液流。處理液釋出口N3朝向與第1方向D1及第6方向D6不同之第7方向D7開口，藉此，以自處理液釋出口N3朝向第7方向D7之方式，生成貯存處理液L1之液流。第7方向D7係以第6方向D6為中心，與第1方向D1對稱之方向。藉由除第1液流R1以外亦生成貯存處理液L1之液流，能夠有效地進行貯存處理液L1之攪拌。The processing liquid discharge port N2 opens in the sixth direction D6 different from the first direction D1, thereby generating a liquid flow for storing the processing liquid L1 so as to face the sixth direction D6 from the processing liquid discharge port N2. The treatment liquid discharge port N3 is opened in a seventh direction D7 different from the first direction D1 and the sixth direction D6, whereby a flow of the treatment liquid L1 is generated so as to face the seventh direction D7 from the treatment liquid discharge port N3 . The seventh direction D7 is a direction symmetrical to the first direction D1 with the sixth direction D6 as the center. By generating the liquid flow for storing the processing liquid L1 in addition to the first liquid flow R1, the stirring of the storage processing liquid L1 can be efficiently performed.
[第6實施形態]
參照圖12～圖13(b)，對本發明之第6實施形態之基板處理裝置100進行說明。圖12係表示用以對氣體K之***部分KI賦予剪力之構成之一例之示意圖。[Sixth Embodiment]
12 to 13(b), the
第6實施形態係未利用貯存處理液L1之液流，而於藉由移動氣泡釋出口M對氣體K之***部分KI賦予剪力之方面與第1實施形態不同。以下，主要對與第1實施形態之不同點進行說明。The sixth embodiment is different from the first embodiment in that a shear force is imparted to the bulge KI of the gas K by moving the bubble release port M without utilizing the flow of the stored treatment liquid L1. Hereinafter, differences from the first embodiment will be mainly described.
如圖12所示，基板處理裝置100進而具備移動部190。As shown in FIG. 12 , the
移動部190係使氣體供給管131相對於內槽112(參照圖1)移動。移動部190例如包含馬達。移動部190例如使氣體供給管131振動。移動部190藉由控制部140進行控制。The moving
繼而，參照圖12～圖13(b)，對自氣體供給管131之氣泡釋出口M1釋出氣泡KA之原理進行說明。圖13(a)係表示自氣泡釋出口M1釋出氣泡KA之原理之第4示意圖。圖13(b)係表示自氣泡釋出口M1釋出氣泡KA之原理之第5示意圖。Next, the principle of releasing the air bubbles KA from the air bubble releasing port M1 of the
如圖12及圖13(a)所示，移動部190使氣體供給管131振動，藉此，氣體K之***部分KI產生振動。其結果，容易自氣體供給管131之內部存在之氣體K剪切***部分KI。As shown in FIG. 12 and FIG. 13( a ), the moving
對氣體供給管131賦予之振動係本發明之剪力之第5例。The vibration imparted to the
如圖12及圖13(b)所示，***部分KI被剪切後成為氣泡KA。氣泡KA於貯存處理液L1內上浮。As shown in FIGS. 12 and 13( b ), the raised portion KI is sheared and becomes the air bubble KA. The air bubbles KA float in the storage treatment liquid L1.
以上，如參照圖12～圖13(b)所說明，移動部190使氣體供給管131振動。因此，能夠對成長中之***部分KI賦予振動。其結果，能夠早期地剪切成長中之***部分KI，因此能夠抑制氣泡KA變大。As described above with reference to FIGS. 12 to 13( b ), the moving
再者，移動部190亦可藉由對氣體供給管131賦予超聲波而使氣體供給管131振動。In addition, the moving
又，移動部190亦可使氣體供給管131平行移動。於氣體供給管131平行移動時，***部分KI因自氣體供給管131向貯存處理液L1內突出而於與氣體供給管131之移動方向相反之方向自貯存處理液L1受到壓力。其結果，能夠藉由來自貯存處理液L1之壓力，早期地剪切成長中之***部分KI，因此能夠抑制氣泡KA變大。In addition, the moving
於氣體供給管131平行移動時，***部分KI自貯存處理液L1受到之壓力係本發明之剪力之第6例。再者，使氣體供給管131平行移動之方向無特別限定。When the
又，移動部190亦可使氣體供給管131圍繞氣體供給管131之軸旋轉。於氣體供給管131旋轉時，***部分KI因自氣體供給管131向貯存處理液L1內突出而於與氣體供給管131之旋轉方向相反之方向自貯存處理液L1受到壓力。其結果，能夠藉由來自貯存處理液L1之壓力，早期地剪切成長中之***部分KI，因此能夠抑制氣泡KA變大。In addition, the moving
於氣體供給管131旋轉時，***部分KI自貯存處理液L1受到之壓力係本發明之剪力之第7例。When the
以上，一面參照圖式(圖1～圖13(b))一面對本發明之實施形態進行了說明。但，本發明不限於上述實施形態，可於不脫離其主旨之範圍內於各種樣態中實施(例如(1)～(5))。又，可藉由適當組合上述實施形態中揭示之數個構成要素而形成各種發明。例如，亦可自實施形態所示之所有構成要素刪除若干個構成要素。圖式係為方便理解而以各個構成要素為主體示意性進行表示，且圖示之各構成要素之個數等亦存在因圖式製作之情況而與實際不同之情形。又，上述實施形態中所示之各構成要素為一例，並無特別限定，可於實質上不脫離本發明之效果之範圍內進行各種變更。The embodiments of the present invention have been described above with reference to the drawings ( FIGS. 1 to 13( b )). However, this invention is not limited to the said embodiment, It can implement in various aspects (for example (1)-(5)) in the range which does not deviate from the summary. In addition, various inventions can be formed by appropriately combining several components disclosed in the above-described embodiments. For example, some components may be deleted from all the components shown in the embodiment. The drawings are schematic representations with each component as the main body for easy understanding, and the number of each component shown in the drawings may also be different from the actual situation due to the situation in which the drawings are made. In addition, each component shown in the said embodiment is an example, It does not specifically limit, Various changes can be added in the range which does not deviate substantially from the effect of this invention.
(1)於第1實施形態～第5實施形態中，控制部140係藉由利用調整閥165調整配管161之開度而控制對氣體供給管131賦予之第1液流R1～第4液流R4各自之壓力大小。(1) In the first to fifth embodiments, the
控制部140可使配管161之開度固定，藉此，將第1液流R1～第4液流R4各自之壓力大小設為固定。又，控制部140亦可以既定時間間隔變更配管161之開度，藉此，週期性地變更第1液流R1～第4液流R4各自之壓力大小。即，控制部140可加強或減弱第1液流R1～第4液流R4各自之壓力大小。The
(2)於第1實施形態～第6實施形態中，氣體供給管131(參照圖4)中形成氣泡釋出口M之部分例如可藉由進行氟塗膜而實施疏水處理。其結果，能夠改善氣泡KA之消泡，因此能夠有效地抑制氣泡KA變大。再者，疏水處理亦可不僅於氣體供給管131中形成氣泡釋出口M之部分而且於氣體供給管131整體實施。(2) In the first to sixth embodiments, the portion of the gas supply pipe 131 (see FIG. 4 ) where the bubble release port M is formed can be subjected to hydrophobic treatment by, for example, fluorine coating. As a result, since the defoaming of the bubbles KA can be improved, the enlargement of the bubbles KA can be effectively suppressed. Furthermore, the hydrophobic treatment may be performed not only in the part where the air bubble release port M is formed in the
(3)於第1實施形態～第6實施形態中，氣泡釋出口M朝向上方開口。然而，本發明並不限定於此。(3) In 1st - 6th embodiment, the bubble discharge port M is opened toward upper direction. However, the present invention is not limited to this.
參照圖14，對氣泡釋出口M之第1變形例進行說明。圖14係表示氣泡釋出口M之第1變形例之圖。14, the 1st modification of the bubble release port M is demonstrated. FIG. 14 is a diagram showing a first modification of the bubble release port M. FIG.
如圖14所示，於第1變形例中，氣泡釋出口M於橫向開口。橫向係與水平方向(X軸方向)平行之方向。因此，氣體K之***部分KI將要自氣泡釋出口M上浮時接觸於氣泡釋出口M之上端，因此，能夠藉由氣泡釋出口M之上端有效地剪切***部分KI。其結果，能夠抑制氣泡KA變大。As shown in FIG. 14, in the 1st modification, the bubble release port M is opened in the horizontal direction. The transverse direction is the direction parallel to the horizontal direction (X-axis direction). Therefore, the raised portion KI of the gas K contacts the upper end of the air bubble discharge port M when it is about to float up from the air bubble discharge port M, so that the raised portion KI can be effectively sheared by the upper end of the air bubble discharge port M. As a result, it is possible to suppress the enlargement of the air bubbles KA.
(4)參照圖15，對氣泡釋出口M之第2變形例進行說明。圖15係表示氣泡釋出口M之第2變形例之圖。(4) Referring to FIG. 15 , a second modification of the bubble release port M will be described. FIG. 15 is a diagram showing a second modification of the bubble release port M. FIG.
如圖15所示，於第2變形例中，氣泡釋出口M之開口面積隨著朝向氣體供給管131之外部而變小。以下，對氣泡釋出口M之第2變形例詳細地進行說明。As shown in FIG. 15 , in the second modification, the opening area of the air bubble release port M decreases toward the outside of the
氣體供給管131具有內面131b及外表面131c。內面131b與氣體供給管131之內部131a對向。外表面131c與氣體供給管131之外部對向。The
氣泡釋出口M具有外側開口Ma及內側開口Mb。外側開口Ma形成於外表面131c。內側開口Mb形成於內面131b。內側開口Mb與外側開口Ma連通。The air bubble release port M has an outer opening Ma and an inner opening Mb. The outer opening Ma is formed on the
外側開口Ma之開口面積V1小於內側開口Mb之開口面積V2(V1＜V2)。其結果，氣泡釋出口M之開口面積隨著自內側開口Mb朝向外側開口Ma而變小，因此，能夠有效地抑制氣泡KA變大。開口面積係相對自內側開口Mb朝向外側開口Ma之方向垂直之氣泡釋出口M之剖面之面積。The opening area V1 of the outer opening Ma is smaller than the opening area V2 of the inner opening Mb (V1<V2). As a result, the opening area of the bubble release port M becomes smaller as it goes from the inner opening Mb toward the outer opening Ma, so that the enlargement of the air bubbles KA can be effectively suppressed. The opening area is the area of the cross section of the air bubble release port M perpendicular to the direction from the inner opening Mb to the outer opening Ma.
再者，氣泡釋出口M之開口面積亦可隨著自內側開口Mb朝向外側開口Ma而逐漸地變小。又，氣泡釋出口M之開口面積亦可隨著自內側開口Mb朝向外側開口Ma而階段性變小。Furthermore, the opening area of the air bubble release port M may gradually decrease from the inner opening Mb toward the outer opening Ma. In addition, the opening area of the air bubble release port M may gradually decrease from the inner opening Mb toward the outer opening Ma.
(5)參照圖16，對氣體供給管131之變形例進行說明。圖16係表示氣體供給管131之變形例之圖。(5) A modification of the
圖16所示之氣體供給管131之變形例具有雙管構造。以下，對氣體供給管131之變形例詳細說明。The modification of the
氣體供給管131具有外側配管131d及內側配管131e。外側配管131d及內側配管131e各自為管狀構件。外側配管131d之外徑大於內側配管131e之外徑。於外側配管131d之內部配置內側配管131e。氣體K流向內側配管131e之內部131f。The
氣泡釋出口M具有第1開口MA及第2開口MB。第1開口MA形成於外側配管131d，且將外側配管131d之內部與外部連通。第2開口MB形成於內側配管131e，且將內側配管131e之內部131f與外部連通。第1開口MA與第2開口MB彼此朝向相同之方向開口。第1開口MA之開口面積V3與第2開口MB之開口面積V4大致相同(V3≒V4)。其結果，能夠藉由第1開口MA及第2開口MB而對***部分KI(參照圖6(b))雙重地施加壓力，因此，能夠抑制***部分KI之成長。再者，第1開口MA之開口面積V3亦可小於第2開口MB之開口面積V4(V3＜V4)。The air bubble release port M has a first opening MA and a second opening MB. The first opening MA is formed in the
(6)於第1實施形態～第6實施形態中，作為氣泡供給部130之氣體供給管131包含石英。然而，本發明不限於此。於第1實施形態～第6實施形態中，氣體供給管131亦可包含PEEK(聚醚醚酮)。即，於第1實施形態～第6實施形態中，亦可使用PEEK製之氣體供給管131。(6) In the first to sixth embodiments, the
以下，參照圖1、圖4、及圖17，對基板處理裝置100中使用PEEK製之氣體供給管131之原因進行說明。Hereinafter, the reason why the
如圖1及圖4所示，於藉由基板處理裝置100進行基板W之處理時，氣體供給管131浸漬於高溫(例如160℃左右)之處理液L(磷酸水溶液)(參照圖1)。然而，於藉由石英形成氣體供給管131之情形時，若長期地(例如半年至1年)使用氣體供給管131，則存在因氣體供給管131長期浸漬於高溫之處理液L中而導致氣泡釋出口M之直徑擴大之情形。於此情形時，因氣泡KA自數個氣泡釋出口M中直徑擴大之氣泡釋出口M釋出，而存在氣泡KA自數個氣泡釋出口M之釋出中產生不均，導致基板處理裝置100對基板W之處理能力降低之可能性。因此，石英製之氣體供給管131以半年至1年左右進行更換。As shown in FIGS. 1 and 4 , when the substrate W is processed by the
本案發明者為抑制氣泡釋出口M之直徑擴大，延長氣體供給管131之更換壽命，而使用可較石英更長期耐受處理液L中之浸漬之樹脂作為氣體供給管131之材料。又，本案發明者將PEEK、PFA(四氟乙烯-全氟烷氧基乙烯基醚共聚合體)、及PTFE(聚四氟乙烯)列為候補，作為設為氣體供給管131之材料之樹脂。而且，本案發明者對PEEK、PFA、及PTFE中之哪一種樹脂最適合作為氣體供給管131之材料進行了驗證。In order to suppress the expansion of the diameter of the bubble release port M and prolong the replacement life of the
再者，於驗證中使用之氣體供給管131中，氣泡釋出口M之內徑為0.2 mm。又，驗證中使用之氣體供給管131之外徑為8 mm，內徑為4 mm。又，驗證中使用之氣體供給管131之長度為400 mm。再者，氣體供給管131之尺寸不限於此，例如，氣體供給管131之外徑亦可為6 mm以上且12 mm以下，內徑亦可為2 mm以上且10 mm以下。Furthermore, in the
又，於處理液供給管167中，處理液釋出口N之內徑例如為l mm。自處理液釋出口N釋出處理液L而非氣泡KA。因此，處理液供給管167未產生類似氣體供給管131之因氣泡KA之不均造成之問題，故而，處理液供給管167之更換壽命(數年左右)長於氣體供給管131之更換壽命(半年至一年左右)。因此，氣體供給管131之更換頻率多於處理液供給管167，故本案發明者將延長氣體供給管131之更換壽命作為課題。而且，本案發明者為解決該課題而設計了氣體供給管131之材料。In addition, in the processing
以下，參照圖17，對PEEK、PFA、PTFE之比較結果進行說明。圖17係表示PEEK、PFA、PTFE之比較結果之表H。再者，於圖17之表H中亦記載有與石英相關之資訊作為參考。Hereinafter, the comparison results of PEEK, PFA, and PTFE will be described with reference to FIG. 17 . Fig. 17 is Table H showing the comparison results of PEEK, PFA, and PTFE. Furthermore, the information related to quartz is also recorded in Table H of FIG. 17 for reference.
如圖17之表H所示，關於耐熱溫度，PEEK、PFA及PTFE大致相同。因此，關於耐熱溫度，各種氣體供給管(PEEK製之氣體供給管131、PFA製之氣體供給管131、及PTFE製之氣體供給管131)之間並未產生差異。As shown in Table H of FIG. 17 , PEEK, PFA, and PTFE are almost the same in terms of heat resistance temperature. Therefore, regarding the heat-resistant temperature, there is no difference among various gas supply pipes (the
如表H所示，關於線膨脹係數，於各種樹脂材料(PEEK、PFA、及PTFE)之中以PEEK為最低。因此，於各種氣體供給管之中，PEEK製之氣體供給管131最不易熱膨脹，因此，於內槽112內最不易產生熱膨脹造成之位置偏移之方面而言較為有利。As shown in Table H, among various resin materials (PEEK, PFA, and PTFE), PEEK has the lowest coefficient of linear expansion. Therefore, among various gas supply pipes, the
如表H所示，關於硬度，於各種樹脂材料之中以PEEK為最硬。因此，於各種氣體供給管之中，PEEK製之氣體供給管131於即便自外部受到壓力亦最不易變形之方面而言較為有利。As shown in Table H, among various resin materials, PEEK is the hardest in terms of hardness. Therefore, among various gas supply pipes, the
如表H所示，關於熱變形溫度，於各種樹脂材料之中以PEEK為最高。因此，於各種氣體供給管之中，PEEK製之氣體供給管131於最不易熱變形之方面而言較為有利。As shown in Table H, among various resin materials, PEEK has the highest thermal deformation temperature. Therefore, among various gas supply pipes, the
再者，於表H中記載有PEEK因於受到1.8 MPa之壓力之狀態下加熱至152℃而熱變形之資訊。然而，雖然於藉由基板處理裝置100進行基板W之處理時使用160℃左右之處理液L，但通常不會對氣體供給管131施加1.8 MPa之類較高之壓力。其結果，即便於藉由基板處理裝置100進行基板W之處理時使用160℃左右之處理液L，亦可抑制PEEK製之氣體供給管131熱變形。Furthermore, in Table H, it is recorded that PEEK was thermally deformed by heating to 152° C. under a pressure of 1.8 MPa. However, although the processing liquid L of about 160° C. is used when the substrate W is processed by the
又，本案發明者發現因氣體供給管131之表面之濕潤性(接觸角)，自氣泡釋出口M吐出之氣泡KA之消泡受到影響。具體而言，本案發明者發現氣體供給管131之表面之濕潤性愈小(接觸角愈大)，氣泡KA之消泡愈佳，從而能夠自氣泡釋出口M釋出較小之氣泡KA。又，本案發明者發現各種氣體供給管中PEEK製之氣體供給管131之表面之濕潤性最小，因此能夠有效地自PEEK製之氣體供給管131之氣泡釋出口M釋出較小之氣泡KA。Furthermore, the inventors of the present invention found that the defoaming of the air bubbles KA discharged from the air bubble release port M is affected by the wettability (contact angle) of the surface of the
本案發明者對上述線膨脹係數之觀點、硬度之觀點、熱變形溫度之觀點、及濕潤性之觀點綜合地進行判斷，確認了各種氣體供給管中使用PEEK製之氣體供給管131最為有利。其結果，於基板處理裝置100中，使用PEEK製之氣體供給管131。The inventors of the present invention comprehensively judged the above-mentioned viewpoints of linear expansion coefficient, hardness, thermal deformation temperature, and wettability, and confirmed that it is most advantageous to use PEEK
如上所述，於基板處理裝置100中，藉由使用PEEK製之氣體供給管131，能夠提昇氣體供給管131對於處理液L之耐久性，從而能夠延長氣體供給管131之更換壽命。
(產業上之可利用性)As described above, in the
本發明可用於基板處理裝置及基板處理方法之領域。The present invention can be used in the fields of substrate processing apparatuses and substrate processing methods.
12a:內槽之底部 100:基板處理裝置 110:處理槽 112:內槽(貯存部) 112a:調節部 114:外槽 116:蓋 116a,116b:開啟部 118a:排液配管 118b,154,166,176,186:閥 120:基板保持部 122:本體板 124:保持棒 126:升降單元 130:氣泡供給部 131:氣體供給管 131a:氣體供給管之內部 131b:內面 131c:外表面 131d:外側配管 131e:內側配管 131f:內側配管之內部 140:控制部 150:氣體搬送部 152,161,174,184:配管 156,165:調整閥 160:循環部(液流生成部) 162:泵 163:過濾器 164:加熱器 167:處理液供給管 170:處理液供給部 172,182:噴嘴 180:水供給部 190:移動部 CL:虛擬中心線 D1:第1方向 D2:第2方向 D3:第3方向 D4:第4方向 D6:第6方向 D7:第7方向 G1,G11:配管群 H:表 K:氣體 KA:氣泡 KI:氣體之***部分 L:處理液 L1:貯存處理液 M,M1:氣泡釋出口 MA:第1開口 MB:第2開口 Ma:外側開口 Mb:內側開口 N,N1,N2,N3:處理液釋出口 R1:第1液流(液流) R2:第2液流(液流) R3:第3液流(液流) R4:第4液流(液流) T1:處理液供給管之中心 V1:外側開口之開口面積 V2:內側開口之開口面積 V3:第1開口之開口面積 V4:第2開口之開口面積 W:基板12a: Bottom of inner groove 100: Substrate processing device 110: Processing tank 112: Inner tank (storage part) 112a: Regulator 114: Outer slot 116: Cover 116a, 116b: opening part 118a: Drain piping 118b, 154, 166, 176, 186: Valves 120: Substrate holding part 122: body board 124: Keep Stick 126: Lifting unit 130: Bubble supply part 131: Gas supply pipe 131a: Inside of gas supply pipe 131b: Inside 131c: External surface 131d: Outside piping 131e: Internal piping 131f: Inside of inside piping 140: Control Department 150: Gas conveying department 152, 161, 174, 184: Piping 156, 165: Adjustment valve 160: Circulation part (liquid flow generation part) 162: Pump 163: Filter 164: Heater 167: Treatment liquid supply pipe 170: Treatment liquid supply part 172,182: Nozzle 180: Water Supply Department 190: Mobile Ministry CL: virtual centerline D1: 1st direction D2: 2nd direction D3: 3rd direction D4: 4th direction D6: 6th direction D7: 7th direction G1, G11: Piping group H: table K: gas KA: bubble KI: the bulge of the gas L: treatment liquid L1: Storage treatment solution M, M1: Bubble release port MA: 1st opening MB: 2nd opening Ma: Outside opening Mb: inside opening N, N1, N2, N3: treatment liquid release port R1: 1st liquid flow (liquid flow) R2: 2nd liquid flow (liquid flow) R3: 3rd liquid flow (liquid flow) R4: 4th stream (stream) T1: The center of the treatment liquid supply pipe V1: The opening area of the outer opening V2: The opening area of the inner opening V3: Opening area of the first opening V4: Opening area of the second opening W: substrate
圖1係本發明之第1實施形態之基板處理裝置之示意圖。 圖2係表示本實施形態之基板之處理方法之流程圖。 圖3(a)係表示基板浸漬於貯存處理液之前之狀態之圖，(b)係表示基板已浸漬於貯存處理液之狀態之圖。 圖4係自Z軸方向觀察配管群所得之圖。 圖5係表示氣泡釋出口與處理液釋出口之位置關係之第1例之圖。 圖6(a)係表示自氣泡釋出口釋出氣泡之原理之第1示意圖，(b)係表示自氣泡釋出口釋出氣泡之原理之第2示意圖。 圖7係表示自氣泡釋出口釋出氣泡之原理之第3示意圖。 圖8係表示氣泡釋出口與處理液釋出口之位置關係之第2例之圖。 圖9係表示氣泡釋出口與處理液釋出口之位置關係之第3例之圖。 圖10係表示氣泡釋出口與處理液釋出口之位置關係之第4例之圖。 圖11係表示氣泡釋出口與處理液釋出口之位置關係之第5例之圖。 圖12係表示用以對氣體之***部分賦予剪力之構成之一例之示意圖。 圖13(a)係表示自氣泡釋出口釋出氣泡之原理之第4示意圖，(b)係表示自氣泡釋出口釋出氣泡之原理之第5示意圖。 圖14係表示氣泡釋出口之第1變形例之圖。 圖15係表示氣泡釋出口之第2變形例之圖。 圖16係表示氣體供給管之變形例之圖。 圖17係表示聚醚醚酮(PEEK，Polyetheretherketone)、四氟乙烯-全氟烷氧基乙烯基醚共聚合體(PFA，Tetrafluoroethylene Perfluorinated Alkey Vinye Copolymer)、聚四氟乙烯(PTFE，Polytetrafluoroethylene)之比較結果之表。FIG. 1 is a schematic diagram of a substrate processing apparatus according to a first embodiment of the present invention. FIG. 2 is a flow chart showing the processing method of the substrate according to the present embodiment. Fig. 3(a) is a diagram showing a state before the substrate is immersed in the storage treatment liquid, and (b) is a diagram showing a state in which the substrate has been immersed in the storage treatment liquid. Figure 4 is a view of the piping group viewed from the Z-axis direction. Fig. 5 is a diagram showing a first example of the positional relationship between the air bubble discharge port and the treatment liquid discharge port. Figure 6(a) is the first schematic diagram showing the principle of releasing air bubbles from the bubble releasing port, and (b) is the second schematic diagram showing the principle of releasing air bubbles from the air bubble releasing port. FIG. 7 is a third schematic diagram showing the principle of releasing air bubbles from the air bubble releasing port. Fig. 8 is a diagram showing a second example of the positional relationship between the bubble discharge port and the treatment liquid discharge port. Fig. 9 is a diagram showing a third example of the positional relationship between the air bubble discharge port and the treatment liquid discharge port. Fig. 10 is a diagram showing a fourth example of the positional relationship between the bubble discharge port and the treatment liquid discharge port. Fig. 11 is a diagram showing a fifth example of the positional relationship between the bubble discharge port and the treatment liquid discharge port. Fig. 12 is a schematic diagram showing an example of a configuration for imparting a shear force to the bulge of the gas. Fig. 13(a) is the fourth schematic diagram showing the principle of releasing air bubbles from the bubble releasing port, and (b) is the fifth schematic diagram showing the principle of releasing air bubbles from the air bubble releasing port. Fig. 14 is a diagram showing a first modification of the bubble release port. Fig. 15 is a view showing a second modification of the bubble release port. Fig. 16 is a view showing a modification of the gas supply pipe. Figure 17 shows the comparison results of polyetheretherketone (PEEK, Polyetheretherketone), tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer (PFA, Tetrafluoroethylene Perfluorinated Alkey Vinye Copolymer), and polytetrafluoroethylene (PTFE, Polytetrafluoroethylene). the table.
100:基板處理裝置 100: Substrate processing device
110:處理槽 110: Processing tank
112:內槽(貯存部) 112: Inner tank (storage part)
112a:調節部 112a: Regulator
114:外槽 114: Outer slot
116:蓋 116: Cover
116a,116b:開啟部 116a, 116b: opening part
118a:排液配管 118a: Drain piping
118b,154,166,176,186:閥 118b, 154, 166, 176, 186: Valves
120:基板保持部 120: Substrate holding part
122:本體板 122: body board
124:保持棒 124: Keep Stick
126:升降單元 126: Lifting unit
130:氣泡供給部 130: Bubble supply part
131:氣體供給管 131: Gas supply pipe
140:控制部 140: Control Department
150:氣體搬送部 150: Gas conveying department
152,161,174,184:配管 152, 161, 174, 184: Piping
156,165:調整閥 156, 165: Adjustment valve
160:循環部(液流生成部) 160: Circulation part (liquid flow generation part)
162:泵 162: Pump
163:過濾器 163: Filter
164:加熱器 164: Heater
167:處理液供給管 167: Treatment liquid supply pipe
170:處理液供給部 170: Treatment liquid supply part
172,182:噴嘴 172,182: Nozzle
180:水供給部 180: Water Supply Department
G1:配管群 G1: Piping group
GL:虛擬中心線 GL: virtual centerline
L:處理液 L: treatment liquid
L1:貯存處理液 L1: Storage treatment solution
M:氣泡釋出口 M: bubble release port
N:處理液釋出口 N: Treatment liquid release port
W:基板 W: substrate
Claims (26)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-028413 | 2019-02-20 | ||
| JP2019028413 | 2019-02-20 | ||
| JP2020024138A JP7368264B2 (en) | 2019-02-20 | 2020-02-17 | Substrate processing equipment and substrate processing method |
| JP2020-024138 | 2020-02-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202040720A TW202040720A (en) | 2020-11-01 |
| TWI750592B true TWI750592B (en) | 2021-12-21 |
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| TW109105310A TWI750592B (en) | 2019-02-20 | 2020-02-19 | Substrate processing apparatus and substrate processing method |
| TW110142669A TWI804053B (en) | 2019-02-20 | 2020-02-19 | Substrate processing apparatus and substrate processing method |
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|---|---|
| JP (1) | JP2023171597A (en) |
| TW (2) | TWI750592B (en) |
| WO (1) | WO2020171124A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200802560A (en) * | 2006-03-22 | 2008-01-01 | Dainippon Screen Mfg | Apparatus for and method of processing substrate |
| TW201324656A (en) * | 2011-08-25 | 2013-06-16 | Dainippon Screen Mfg | Substrate treating apparatus |
| TW201813710A (en) * | 2016-09-28 | 2018-04-16 | 斯庫林集團股份有限公司 | Substrate processing apparatus and substrate processing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3183123B2 (en) * | 1995-08-30 | 2001-07-03 | 信越半導体株式会社 | Etching equipment |
| JP2004146545A (en) * | 2002-10-24 | 2004-05-20 | Univ Shizuoka | Etching method and etching device for silicon substrate |
| JP2004356299A (en) * | 2003-05-28 | 2004-12-16 | Tokyo Electron Ltd | Liquid processor, component used for wetted part and manufacturing method of the component |
| JP2006344792A (en) * | 2005-06-09 | 2006-12-21 | Toshiba Corp | Semiconductor wafer processor and manufacturing method of semiconductor device |
| JP6788542B2 (en) * | 2017-03-31 | 2020-11-25 | 東京エレクトロン株式会社 | Substrate liquid processing equipment |
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- 2020-02-19 TW TW109105310A patent/TWI750592B/en active
- 2020-02-19 TW TW110142669A patent/TWI804053B/en active
- 2020-02-19 WO PCT/JP2020/006555 patent/WO2020171124A1/en active Application Filing
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200802560A (en) * | 2006-03-22 | 2008-01-01 | Dainippon Screen Mfg | Apparatus for and method of processing substrate |
| TW201324656A (en) * | 2011-08-25 | 2013-06-16 | Dainippon Screen Mfg | Substrate treating apparatus |
| TW201813710A (en) * | 2016-09-28 | 2018-04-16 | 斯庫林集團股份有限公司 | Substrate processing apparatus and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202040720A (en) | 2020-11-01 |
| WO2020171124A1 (en) | 2020-08-27 |
| JP2023171597A (en) | 2023-12-01 |
| TW202215576A (en) | 2022-04-16 |
| TWI804053B (en) | 2023-06-01 |
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