TWI745581B - High magnetic permeability target device - Google Patents
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Description
本發明係關於一種磁性靶材,尤指一種提高磁力穿透並集中電漿轟擊濺鍍的具高磁穿性之磁性靶材。The present invention relates to a magnetic target material, in particular to a magnetic target material with high magnetic penetrability that improves magnetic penetration and concentrates plasma bombardment and sputtering.
查,依據中國大陸專利公告第CN204644457U號所揭示之一種磁性靶材裝置,其包含一背板及一濺鍍靶。濺鍍靶由磁性金屬製成並包含一設置於背板之一基底面、一相反於基底面之轟擊面及至少一由轟擊面貫通至基底面的導磁通道,其中,導磁通道具有一由轟擊面朝背板方向延伸的第一導磁段、一連通第一導磁段並與第一導磁段形成一第一夾角延伸的第二導磁段,及一連通第二導磁段並與第二導磁段形成一第二夾角朝背板延伸的第三導磁段。According to the investigation, a magnetic target device disclosed in Mainland China Patent Publication No. CN204644457U includes a back plate and a sputtering target. The sputtering target is made of magnetic metal and includes a base surface arranged on the back plate, a bombarding surface opposite to the base surface, and at least one magnetic channel penetrating from the bombarding surface to the base surface, wherein the magnetic channel has a A first magnetically permeable section extending from the bombardment surface toward the back plate, a second magnetically permeable section that communicates with the first magnetically permeable section and forms a first angle with the first magnetically permeable section, and a connected second magnetically permeable section It forms a third magnetically permeable section extending toward the back plate at a second angle with the second magnetically permeable section.
於實際轟擊濺鍍靶時,由於第一導磁段與第二導磁段間形成有第一夾角,以及第二導磁段與第三導磁段間形成有第二夾角,因此磁場穿越濺鍍靶的兩導磁通道過程中,磁場的穿越效率會受到第一角度及第二角度的干擾,接著,請配合圖5所示,其係習知偵測濺鍍靶的磁場強度分布曲線圖,顯然地,偵測出的磁場強度呈現雙峰曲線,其中,兩個峰值的位置分別是對應於濺鍍靶的內側與外側靶區塊,對應雙峰之間谷值部分則為中間靶區塊;換句話說,實際上承受轟擊較多的中間靶區塊反而磁場強度較低,其可能是因為磁場穿越兩導磁通道過程受到干擾而產生磁力分散的現象,進而會產生降低濺鍍靶的濺鍍效能之問題。In the actual bombardment of the sputtering target, since the first angle is formed between the first and second magnetically permeable segments, and the second angle is formed between the second and third magnetically permeable segments, the magnetic field passes through the sputtering During the process of the two magnetic channels of the plating target, the traversing efficiency of the magnetic field will be interfered by the first angle and the second angle. Then, please cooperate with the graph shown in Figure 5, which is a conventional sputtering target detection magnetic field intensity distribution curve. Obviously, the detected magnetic field intensity presents a double-peak curve, where the positions of the two peaks correspond to the inner and outer target blocks of the sputtering target, and the valley between the two peaks is the middle target block. In other words, in fact, the middle target block that has suffered more bombardment actually has lower magnetic field strength. This may be due to the interference of the magnetic field passing through the two magnetic channels and the dispersion of magnetic force, which will reduce the sputtering target. The problem of sputtering performance.
本發明之主要目的在於解決習知濺鍍靶材之磁場強度不均的缺失,並解決濺鍍靶材濺鍍效能不佳的問題。The main purpose of the present invention is to solve the lack of uneven magnetic field intensity of the conventional sputtering target and solve the problem of poor sputtering performance of the sputtering target.
為了解決上述課題,本發明提供一種具高磁穿性之磁性靶材,其包含:一背板、一靶材單元及一磁性單元。背板為非磁性材料,靶材單元設於背板之一面,靶材單元包含一內側靶材、一環設內側靶材的內環靶材,以及一遠離內側靶材環設內環靶材一側的外環靶材,內環靶材為磁性材料製成,其具有接觸於背板之一基底面、遠離基底面之一轟擊面、一第一導磁面及一第二導磁面,第一導磁面及第二導磁面相對設置且分別連接基底面與轟擊面,基底面連接第一導磁面與第二導磁面之長度大於轟擊面連接第一導磁面與第二導磁面之長度,內側靶材鄰設於第一導磁面並與內環靶材間形成一內側導磁通道,外環靶材遠離內側靶材鄰設於第二導磁面並與內環靶材間形成一外側導磁通道,磁性單元遠離靶材單元設於背板之另一面,磁性單元包含一第一磁鐵及一第二磁鐵,第一磁鐵對應設置於內側靶材之位置,第二磁鐵對應設置於外環靶材之位置。In order to solve the above-mentioned problems, the present invention provides a magnetic target with high magnetic penetration, which includes: a back plate, a target unit, and a magnetic unit. The back plate is made of non-magnetic material. The target unit is arranged on one side of the back plate. The target unit includes an inner target, an inner ring target with an inner target ring, and an inner ring target that is ringed away from the inner target The outer ring target material on the side, the inner ring target material is made of magnetic material, which has a base surface contacting the back plate, a bombarding surface away from the base surface, a first magnetic conductive surface and a second magnetic conductive surface, The first magnetic surface and the second magnetic surface are opposed to each other and respectively connect the base surface and the bombardment surface. The base surface connects the first magnetic surface and the second magnetic surface longer than the bombardment surface connects the first magnetic surface and the second magnetic surface. The length of the magnetic surface, the inner target is adjacent to the first magnetic surface and an inner magnetic channel is formed between the inner target An outer magnetic channel is formed between the ring targets. The magnetic unit is located on the other side of the back plate away from the target unit. The magnetic unit includes a first magnet and a second magnet. The first magnet is corresponding to the position of the inner target. The second magnet is correspondingly arranged at the position of the outer ring target.
藉此,透過本發明傾斜設置的內側導磁通道與外側導磁通道能提升磁性單元的磁場穿越靶材單元的效果,提升內環靶材上方的磁場強度,使電漿更能夠集中轟擊於內環靶材的轟擊面上,藉以提升靶材單元的磁場穿透性以及濺鍍效率,而且還可以達到防止電漿直接轟擊背板的功效。Thereby, through the obliquely arranged inner magnetic channel and outer magnetic channel of the present invention, the effect of the magnetic field passing through the target unit of the magnetic unit can be improved, and the magnetic field strength above the target of the inner ring can be increased, so that the plasma can more concentrated bombardment in the inner ring. The bombardment surface of the ring target can improve the magnetic field penetration and sputtering efficiency of the target unit, and it can also achieve the effect of preventing the plasma from directly bombarding the backplane.
為便於說明本發明於上述發明內容一欄中所表示的中心思想,茲以具體實施例表達。實施例中各種不同物件係按適於列舉說明之比例,而非按實際元件的比例予以繪製,合先敘明。In order to facilitate the description of the central idea of the present invention expressed in the column of the above-mentioned summary of the invention, specific embodiments are used to express it. Various objects in the embodiments are drawn according to the proportions suitable for enumeration and description, rather than according to the proportions of actual elements, and are described first.
請參閱圖1至圖4所示,本發明提供一種具高磁穿性之磁性靶材,其包含:一背板10、一靶材單元20及一磁性單元30。Please refer to FIGS. 1 to 4, the present invention provides a magnetic target with high magnetic penetration, which includes a
背板10,其為非磁性材料,且本實施例中背板10的厚度為3毫米至6毫米。The
靶材單元20,其設於背板10之一面,於本實施例中,靶材單元20整體為具有兩端為弧形的長方結構,類似於操場之形狀,靶材單元20包含一內側靶材21、一環設內側靶材21的內環靶材22,以及一環設內環靶材22遠離內側靶材21一側的外環靶材23,其中,內環靶材22為磁性材料製成,而內側靶材21與外環靶材23之材質視需求情況而可為磁性材料。除此之外,於本實施例中,內側靶材21與外環靶材23垂直於背板10之厚度大於內環靶材22垂直於背板10之厚度,值得詳細說明的是,內側靶材21與外環靶材23之厚度大於內環靶材22之厚度1毫米至6毫米,且內側靶材21與外環靶材23彼此等高設置,藉由如此的結構設計,能夠進一步的降低磁性單元30內側靶材21與外環靶材23的磁場強度,以集中磁場強度於內環靶材22,提升濺鍍的效率。舉例來說,本發明之背板10厚度為4公釐(mm),內側靶材21以及外環靶材23之厚度為8公釐,而內環靶材22之厚度為6公釐。The
請配合參酌圖2及圖3所示,內環靶材22具有接觸於背板10之一基底面221、遠離基底面221之一轟擊面222、一第一導磁面223及一第二導磁面224,第一導磁面223及第二導磁面224相對設置於內環靶材22之兩側面,且第一導磁面223及第二導磁面224分別連接於基底面221與轟擊面222,於本發明實施例中,基底面221連接第一導磁面223與第二導磁面224之長度大於轟擊面222連接第一導磁面223與第二導磁面224之長度。Please refer to FIGS. 2 and 3, the
換句話說,請配合參酌圖3所示,內環靶材22的第一導磁面223與第二導磁面224分別由基底面221往轟擊面222方向傾斜延伸,其中,基底面221與第一導磁面223及第二導磁面224間的角度可介於30∘至85∘之間,於本發明實施例中,基底面221與第一導磁面223及第二導磁面224間的角度為45∘,使內環靶材22之截面形成上窄下寬之等腰梯形,但本發明不限於此,第一導磁面223與第二導磁面224分別可由基底面221往轟擊面222方向弧形延伸或者呈鋸齒狀設置In other words, please refer to FIG. 3, the first
更進一步的說明,內側靶材21具有一內側導磁面211以及一內側延伸面212,內側導磁面211之位置對應鄰設於內環靶材22之第一導磁面223,使內側導磁面211與第一導磁面223間貫穿形成一內側導磁通道24,內側導磁通道24的間隔距離為0.5毫米至3毫米,內側延伸面212由內側導磁面211往遠離背板10之方向縱向延伸,使內側延伸面212凸出內環靶材22之轟擊面222。內側導磁面211與背板10間具有一內側接點213。而外環靶材23具有一外環導磁面231以及一外環延伸面232,外環導磁面231之位置遠離內側靶材21對應鄰設於內環靶材22之第二導磁面224,使外環導磁面231與第二導磁面224間貫穿形成一外側導磁通道25,而外側導磁通道25的間隔距離為0.5毫米至3毫米,外環延伸面232由外環導磁面231往遠離背板10之方向縱向延伸,且外環延伸面232凸出內環靶材22之轟擊面222。外環導磁面231與背板10間具有一外側接點233。藉由這樣的設計,可減少內側靶材21與外環靶材23因部分遮蓋於內環靶材22,而受到離子轟擊的問題,藉此增加內側靶材21與外環靶材23的使用壽命。To further illustrate, the
磁性單元30,其遠離靶材單元20設於背板10之另一面,磁性單元30包含一第一磁鐵31及一第二磁鐵32,請配合參酌圖3所示,第一磁鐵31對應設置於內側靶材21之位置,且第一磁鐵31之一第一邊緣311係縱向切齊於內側接點213,第二磁鐵32對應設置於外環靶材23之位置,且第二磁鐵32之一第二邊緣321係縱向切齊於外側接點233,值得詳細說明的是,由於磁性單元30的磁場難以直接穿透內側靶材21與外環靶材23,因此,透過第一磁鐵31與第二磁鐵32切齊於內側接點213及外側接點233的設置方式,可集中磁場經由內側導磁通道24與外側導磁通道25穿透靶材單元20。The
此外,第一磁鐵31與第二磁鐵32分別設於背板10,於本實施例中,第一磁鐵31之S極相鄰於背板10,而N極則是遠離背板10,第二磁鐵32之N極相鄰於背板10,而S極則是遠離背板10,藉以磁性單元30的磁場會由第二磁鐵32與第一磁鐵31之相異極性形成封閉磁力線。更進一步的說明,第一磁鐵31與第二磁鐵32之磁力線會藉由內側導磁通道24與外側導磁通道25的導引,而增加位於內環靶材22上方的磁場強度。In addition, the
請特別配合參閱圖4所示,其係對應於本發明之靶材結構的磁場強度位置對應分佈圖,如圖所示,對應於內側靶材21與外環靶材23位置的磁場強度遠較對應於內環靶材22位置的磁場強度低,而形成一高斯分佈的曲線圖,因而可在進行磁性濺鍍時,將轟擊力量集中於內環靶材22之位置,而提升靶材濺鍍效率。Please refer to FIG. 4 in particular, which is a corresponding distribution diagram of the magnetic field intensity position corresponding to the target structure of the present invention. As shown in the figure, the magnetic field intensity corresponding to the position of the
藉此,本發明具有以下優點:Therefore, the present invention has the following advantages:
1.利用內側導磁通道24與外側導磁通道25之傾斜方向對應於第一磁鐵31與第二磁鐵32之封閉磁力線的弧形範圍,因此可有效的避免靶材單元20影響磁場強度的問題,提升位於內環靶材22位置所對應的磁場強度。1. Utilize the inclination direction of the inner
2.藉由傾斜的內側導磁通道24與外側導磁通道25,亦可達到降低離子直接轟擊背板10的優點。2. With the inclined inner
3.透過第一磁鐵31之第一邊緣311縱向切齊內側接點213,而第二磁鐵32之第二邊緣321縱向切齊外側接點233,能夠有效讓磁力線通過內側導磁通道24與外側導磁通道25,避免磁力耗損之狀況。3. The
4.內側靶材21之內側延伸面212與外環靶材23之外環延伸面232係縱向垂直於背板10,可減少內側靶材21與外環靶材23因部分遮蓋於內環靶材22之位置,而受到離子轟擊的問題,藉此增加內側靶材21與外環靶材23的使用壽命。4. The
以上所舉實施例僅用以說明本發明而已,非用以限制本發明之範圍。舉凡不違本發明精神所從事的種種修改或變化,俱屬本發明意欲保護之範疇。The above-mentioned embodiments are only used to illustrate the present invention, and are not used to limit the scope of the present invention. All modifications or changes made without violating the spirit of the present invention fall within the scope of the present invention's intended protection.
10‧‧‧背板
23‧‧‧外環靶材
20‧‧‧靶材單元
231‧‧‧外環導磁面
21‧‧‧內側靶材
232‧‧‧外環延伸面
211‧‧‧內側導磁面
233‧‧‧外側接點
212‧‧‧內側延伸面
24‧‧‧內側導磁通道
213‧‧‧內側接點
25‧‧‧外側導磁通道
22‧‧‧內環靶材
30‧‧‧磁性單元
221‧‧‧基底面
31‧‧‧第一磁鐵
222‧‧‧轟擊面
311‧‧‧第一邊緣
223‧‧‧第一導磁面
32‧‧‧第二磁鐵
224‧‧‧第二導磁面
321‧‧‧第二邊緣
10‧‧‧Back plate
23‧‧‧
圖1係為本發明之俯視外觀示意圖。 圖2係為本發明沿剖面線2-2之剖面示意圖。 圖3係圖2之局部放大示意圖。 圖4係為本發明之磁場強度位置對應分佈曲線圖。 圖5係為習知之磁場強度分佈曲線圖。Figure 1 is a schematic top view of the appearance of the present invention. Figure 2 is a schematic cross-sectional view of the present invention along the section line 2-2. Fig. 3 is a partial enlarged schematic diagram of Fig. 2. Fig. 4 is a graph showing the corresponding distribution curve of the magnetic field strength position of the present invention. Figure 5 is a graph of the conventional magnetic field intensity distribution.
10‧‧‧背板 10‧‧‧Back plate
20‧‧‧靶材單元 20‧‧‧Target unit
21‧‧‧內側靶材 21‧‧‧Inner target
211‧‧‧內側導磁面 211‧‧‧Inner magnetic surface
212‧‧‧內側延伸面 212‧‧‧Inside extension surface
213‧‧‧內側接點 213‧‧‧Inside contact
22‧‧‧內環靶材 22‧‧‧Inner ring target
221‧‧‧基底面 221‧‧‧Base surface
222‧‧‧轟擊面 222‧‧‧Bombardment surface
223‧‧‧第一導磁面 223‧‧‧The first magnetic surface
224‧‧‧第二導磁面 224‧‧‧Second magnetic surface
23‧‧‧外環靶材 23‧‧‧Outer Ring Target
231‧‧‧外環導磁面 231‧‧‧Outer ring magnetic surface
232‧‧‧外環延伸面 232‧‧‧Extended surface of outer ring
233‧‧‧外側接點 233‧‧‧Outside contact
24‧‧‧內側導磁通道 24‧‧‧Inner magnetic channel
25‧‧‧外側導磁通道 25‧‧‧Outside magnetic channel
30‧‧‧磁性單元 30‧‧‧Magnetic unit
31‧‧‧第一磁鐵 31‧‧‧The first magnet
311‧‧‧第一邊緣 311‧‧‧First Edge
32‧‧‧第二磁鐵 32‧‧‧Second Magnet
321‧‧‧第二邊緣 321‧‧‧Second Edge
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TW107112438A TWI745581B (en) | 2018-04-11 | 2018-04-11 | High magnetic permeability target device |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4412907A (en) * | 1982-07-23 | 1983-11-01 | Nihon Shinku Gijutsu Kabushiki Kaisha | Ferromagnetic high speed sputtering apparatus |
US20110186421A1 (en) * | 2010-01-29 | 2011-08-04 | Oc Oerlikon Balzers Ag | Target assembly for a magnetron sputtering apparatus, a magnetron sputtering apparatus and a method of using the magnetron sputtering apparatus |
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2018
- 2018-04-11 TW TW107112438A patent/TWI745581B/en active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4412907A (en) * | 1982-07-23 | 1983-11-01 | Nihon Shinku Gijutsu Kabushiki Kaisha | Ferromagnetic high speed sputtering apparatus |
US20110186421A1 (en) * | 2010-01-29 | 2011-08-04 | Oc Oerlikon Balzers Ag | Target assembly for a magnetron sputtering apparatus, a magnetron sputtering apparatus and a method of using the magnetron sputtering apparatus |
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TW201943879A (en) | 2019-11-16 |
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