TWI743700B - ４ｇ頻帶用彈性表面波元件 - Google Patents

４ｇ頻帶用彈性表面波元件 Download PDF

Info

Publication number: TWI743700B
Authority: TW; Taiwan
Prior art keywords: substrate; piezoelectric material; silicon oxide; material substrate; oxide layer
Prior art date: 2019-07-03

Application number

TW109108143A

Other languages

English (en)

Chinese (zh)

Other versions

TW202107745A (zh

Inventor

淺井圭一郎

服部良祐

多井知義

鵜野雄大

Original Assignee

日商日本碍子股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2019-07-03

Filing date

2020-03-12

Publication date

2021-10-21

2020-03-12 Application filed by 日商日本碍子股份有限公司 filed Critical 日商日本碍子股份有限公司

2021-02-16 Publication of TW202107745A publication Critical patent/TW202107745A/zh

2021-10-21 Application granted granted Critical

2021-10-21 Publication of TWI743700B publication Critical patent/TWI743700B/zh

Links

239000000758 substrate Substances 0.000 claims abstract description 117
239000000463 material Substances 0.000 claims abstract description 61
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 45
229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 41
239000000203 mixture Substances 0.000 claims abstract description 20
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims abstract description 5
238000010897 surface acoustic wave method Methods 0.000 claims description 19
229910052710 silicon Inorganic materials 0.000 claims description 8
239000010703 silicon Substances 0.000 claims description 8
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
229910003564 SiAlON Inorganic materials 0.000 claims description 4
229910052878 cordierite Inorganic materials 0.000 claims description 3
JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 3
KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 3
GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
229910052863 mullite Inorganic materials 0.000 claims description 3
229910052594 sapphire Inorganic materials 0.000 claims description 3
239000010980 sapphire Substances 0.000 claims description 3
WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
229910052744 lithium Inorganic materials 0.000 claims description 2
239000006104 solid solution Substances 0.000 claims description 2
CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims 1
239000010408 film Substances 0.000 description 32
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 18
239000001301 oxygen Substances 0.000 description 18
229910052760 oxygen Inorganic materials 0.000 description 18
238000000034 method Methods 0.000 description 14
230000007935 neutral effect Effects 0.000 description 10
229910052751 metal Inorganic materials 0.000 description 9
239000002184 metal Substances 0.000 description 9
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
238000004140 cleaning Methods 0.000 description 6
238000004519 manufacturing process Methods 0.000 description 6
235000019687 Lamb Nutrition 0.000 description 5
229910004298 SiO 2 Inorganic materials 0.000 description 5
238000005498 polishing Methods 0.000 description 5
238000004544 sputter deposition Methods 0.000 description 5
230000004913 activation Effects 0.000 description 4
238000001994 activation Methods 0.000 description 4
238000005229 chemical vapour deposition Methods 0.000 description 4
230000000052 comparative effect Effects 0.000 description 4
239000013078 crystal Substances 0.000 description 4
230000003287 optical effect Effects 0.000 description 4
239000010409 thin film Substances 0.000 description 4
229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
229910052782 aluminium Inorganic materials 0.000 description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
239000000919 ceramic Substances 0.000 description 3
239000007789 gas Substances 0.000 description 3
230000006872 improvement Effects 0.000 description 3
239000011261 inert gas Substances 0.000 description 3
238000005259 measurement Methods 0.000 description 3
239000000126 substance Substances 0.000 description 3
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
229910052581 Si3N4 Inorganic materials 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
230000008859 change Effects 0.000 description 2
230000005684 electric field Effects 0.000 description 2
238000000921 elemental analysis Methods 0.000 description 2
238000000227 grinding Methods 0.000 description 2
238000010884 ion-beam technique Methods 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
238000005546 reactive sputtering Methods 0.000 description 2
238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
239000000377 silicon dioxide Substances 0.000 description 2
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
238000001228 spectrum Methods 0.000 description 2
238000005477 sputtering target Methods 0.000 description 2
238000007740 vapor deposition Methods 0.000 description 2
229910000838 Al alloy Inorganic materials 0.000 description 1
235000017166 Bambusa arundinacea Nutrition 0.000 description 1
235000017491 Bambusa tulda Nutrition 0.000 description 1
241001330002 Bambuseae Species 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
235000015334 Phyllostachys viridis Nutrition 0.000 description 1
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
229910010413 TiO 2 Inorganic materials 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
239000011425 bamboo Substances 0.000 description 1
239000005380 borophosphosilicate glass Substances 0.000 description 1
238000004364 calculation method Methods 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
239000011651 chromium Substances 0.000 description 1
239000002131 composite material Substances 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
238000005108 dry cleaning Methods 0.000 description 1
230000005284 excitation Effects 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
238000005304 joining Methods 0.000 description 1
239000011259 mixed solution Substances 0.000 description 1
238000002156 mixing Methods 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
229910052758 niobium Inorganic materials 0.000 description 1
239000010955 niobium Substances 0.000 description 1
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
230000000737 periodic effect Effects 0.000 description 1
239000005360 phosphosilicate glass Substances 0.000 description 1
238000000678 plasma activation Methods 0.000 description 1
230000010287 polarization Effects 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
230000000644 propagated effect Effects 0.000 description 1
230000009467 reduction Effects 0.000 description 1
229910052707 ruthenium Inorganic materials 0.000 description 1
238000005201 scrubbing Methods 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
238000005245 sintering Methods 0.000 description 1
239000000243 solution Substances 0.000 description 1
241000894007 species Species 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives

Landscapes

Physics & Mathematics (AREA)
Acoustics & Sound (AREA)
Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

TW109108143A 2019-07-03 2020-03-12 ４ｇ頻帶用彈性表面波元件 TWI743700B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2019-124258		2019-07-03
JP2019124258		2019-07-03

Publications (2)

Publication Number	Publication Date
TW202107745A TW202107745A (zh)	2021-02-16
TWI743700B true TWI743700B (zh)	2021-10-21

Family

ID=74100786

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW109108143A TWI743700B (zh)	2019-07-03	2020-03-12	４ｇ頻帶用彈性表面波元件

Country Status (3)

Country	Link
JP (1)	JPWO2021002047A1 (ja)
TW (1)	TWI743700B (ja)
WO (1)	WO2021002047A1 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW201813289A (zh) *	2016-07-20	2018-04-01	信越化學工業股份有限公司	表面聲波裝置用複合基板及其之製造方法與使用此複合基板之表面聲波裝置
TW201840128A (zh) *	2017-03-31	2018-11-01	日商日本碍子股份有限公司	接合體及彈性波元件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2012073871A1 (ja) *	2010-11-30	2012-06-07	株式会社村田製作所	弾性波装置及びその製造方法
US10084427B2 (en) *	2016-01-28	2018-09-25	Qorvo Us, Inc.	Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof
JP6668292B2 (ja) *	2017-06-07	2020-03-18	日本碍子株式会社	圧電性材料基板の接合体、接合方法および弾性波素子

2020
- 2020-02-21 JP JP2020543835A patent/JPWO2021002047A1/ja active Pending
- 2020-02-21 WO PCT/JP2020/007136 patent/WO2021002047A1/ja active Application Filing
- 2020-03-12 TW TW109108143A patent/TWI743700B/zh active

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW201813289A (zh) *	2016-07-20	2018-04-01	信越化學工業股份有限公司	表面聲波裝置用複合基板及其之製造方法與使用此複合基板之表面聲波裝置
TW201840128A (zh) *	2017-03-31	2018-11-01	日商日本碍子股份有限公司	接合體及彈性波元件

Also Published As

Publication number	Publication date
TW202107745A (zh)	2021-02-16
JPWO2021002047A1 (ja)	2021-09-13
WO2021002047A1 (ja)	2021-01-07

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