TWI743560B - Anisotropic conductive film, connection structure, and manufacturing method of connection structure - Google Patents

Anisotropic conductive film, connection structure, and manufacturing method of connection structure Download PDF

Info

Publication number
TWI743560B
TWI743560B TW108132428A TW108132428A TWI743560B TW I743560 B TWI743560 B TW I743560B TW 108132428 A TW108132428 A TW 108132428A TW 108132428 A TW108132428 A TW 108132428A TW I743560 B TWI743560 B TW I743560B
Authority
TW
Taiwan
Prior art keywords
conductive particles
film
sheet
anisotropic conductive
resin layer
Prior art date
Application number
TW108132428A
Other languages
Chinese (zh)
Other versions
TW201947614A (en
Inventor
石松朋之
Original Assignee
日商迪睿合股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪睿合股份有限公司 filed Critical 日商迪睿合股份有限公司
Priority claimed from JP2013160117A external-priority patent/JP6169915B2/en
Publication of TW201947614A publication Critical patent/TW201947614A/en
Application granted granted Critical
Publication of TWI743560B publication Critical patent/TWI743560B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B32B37/025—Transfer laminating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
    • B32B37/18—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of discrete sheets or panels only
    • B32B37/182—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of discrete sheets or panels only one or more of the layers being plastic
    • B32B37/185—Laminating sheets, panels or inserts between two discrete plastic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B32B2037/1253—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives curable adhesive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
    • B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
    • B32B2310/0831—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B32B37/1207—Heat-activated adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27005—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for aligning the layer connector, e.g. marks, spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/271—Manufacture and pre-treatment of the layer connector preform
    • H01L2224/2711—Shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/29076—Plural core members being mutually engaged together, e.g. through inserts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29316—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29324—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29357—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/2936—Iron [Fe] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29371—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10674—Flip chip
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24562—Interlaminar spaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electrical Connectors (AREA)

Abstract

本發明之目的在於一種異向性導電膜，其導電性粒子之分散性、粒子捕捉性優異，即使於經窄間距化之端子彼此中，亦維持導通可靠性。一種含有導電性粒子（3）之異向性導電膜（1）之製造方法，其係於沿同方向形成有連續之數個溝槽（10）的片材（2）之溝槽（10）中埋入導電性粒子（3），並排列導電性粒子（3），於形成有溝槽（10）之側的片材（2）表面，層壓在可延伸之基礎膜（6）上形成有熱硬化性樹脂層5的第1樹脂膜（4）而使導電性粒子（3）轉黏，將第1樹脂膜（4）於除了與導電性粒子（3）之排列方向正交之方向以外的方向進行單軸延伸，並層壓第2樹脂膜（7）。The object of the present invention is to provide an anisotropic conductive film that has excellent dispersibility and particle capture properties of conductive particles, and maintains conduction reliability even in terminals with a narrower pitch. A method for manufacturing an anisotropic conductive film (1) containing conductive particles (3), which is based on the grooves (10) of a sheet (2) formed with several continuous grooves (10) in the same direction The conductive particles (3) are embedded in the substrate, and the conductive particles (3) are arranged. The surface of the sheet (2) on the side where the groove (10) is formed is laminated on the stretchable base film (6) to form The first resin film (4) with the thermosetting resin layer 5 is used to transfer the conductive particles (3), and the first resin film (4) is placed in a direction other than the direction orthogonal to the arrangement direction of the conductive particles (3) Uniaxially stretched in other directions, and the second resin film (7) is laminated.

Description

異向性導電膜、連接結構體、及連接結構體之製造方法Anisotropic conductive film, connection structure, and manufacturing method of connection structure

本發明係關於一種異向性導電膜之製造方法、異向性導電膜、及連接結構體，尤其是關於一種導電性粒子之分散性、粒子捕捉性優異，即使於窄間距化之端子彼此中亦可維持導通可靠性的異向性導電膜之製造方法、異向性導電膜、及連接結構體。本申請案係基於2012年8月1日於日本提出申請之日本專利申請編號日本特願2012-171331、及2013年8月1日於日本提出申請之日本專利申請編號日本特願2013-160116、日本特願2013-160117、日本特願2013-160118而主張優先權者，將該等申請案作為參照而引用於本申請案中。 The present invention relates to a method for manufacturing an anisotropic conductive film, an anisotropic conductive film, and a connecting structure, and in particular to a conductive particle having excellent dispersibility and particle trapping properties, even in narrow-pitch terminals. A manufacturing method of an anisotropic conductive film, an anisotropic conductive film, and a connection structure that can also maintain conduction reliability. This application is based on the Japanese Patent Application No. Japanese Patent Application No. 2012-171331 filed in Japan on August 1, 2012, and the Japanese Patent Application No. Japanese Patent Application No. 2013-160116, filed in Japan on August 1, 2013. Those who claim priority in Japanese Patent Application 2013-160117 and Japanese Patent Application 2013-160118 will quote these applications in this application as a reference.

異向性導電膜(ACF，anisotropic conductive film)係將導電性粒子分散於作為接著劑而發揮功能之絕緣性黏合劑樹脂中而成者。通常之異向性導電膜係藉由將分散有導電性粒子之黏合劑樹脂組成物塗佈於基礎膜上而形成為片狀。於使用異向性導電膜時，例如將其夾入電子零件之凸塊與配線板之電極端子之間，藉由利用加熱推壓頭進行加熱及加壓而將導電性粒子壓碎於凸塊與電極端子中，於該狀態下黏合劑樹脂發生硬化，藉此實現電性、機械連接。於無凸塊之部分，導電性粒子於黏合劑樹脂中維持分散之狀態，而保持電氣絕緣之狀態，因此變得僅於有凸塊之部分實現電性導通。又，異向性導電膜之厚度係設定為電子零件之凸塊或配線板之電極之高度以上，藉由加熱推壓頭之推壓而使剩餘之接著劑成分流延至電極周邊。 Anisotropic conductive film (ACF, anisotropic conductive film) is formed by dispersing conductive particles in an insulating adhesive resin that functions as an adhesive. A general anisotropic conductive film is formed into a sheet by applying a binder resin composition in which conductive particles are dispersed on a base film. When an anisotropic conductive film is used, for example, it is sandwiched between the bumps of the electronic parts and the electrode terminals of the wiring board, and the conductive particles are crushed on the bumps by heating and pressing with a heating press head In this state, the adhesive resin hardens with the electrode terminal, thereby realizing electrical and mechanical connection. In the part without bumps, the conductive particles are kept dispersed in the binder resin, while maintaining the electrical insulation state, so it becomes only the part with bumps to achieve electrical conduction. In addition, the thickness of the anisotropic conductive film is set to be higher than the height of the bump of the electronic component or the electrode of the wiring board, and the remaining adhesive component is cast to the periphery of the electrode by the pressing of the heating pressing head.

於異向性導電膜中，大多數情形為將導電性粒子之摻合量相對於接著劑成分之體積設為5~15體積%。其原因在於：若導電性粒子之摻合量未達5體積%，則存在凸塊-電極端子間之導電性粒子之量(一般將其稱為「粒子捕捉率」)變少，導通可靠性可能會降低，反之，若摻合量超過15體積%，則於鄰接之電極端子間導電性粒子以相連之狀態存在，可能會導致短路。 In the anisotropic conductive film, in most cases, the blending amount of the conductive particles is set to 5-15% by volume relative to the volume of the adhesive component. The reason is that if the blending amount of conductive particles is less than 5% by volume, the amount of conductive particles between the bump and the electrode terminal (generally referred to as the "particle capture rate") decreases, and the conduction reliability It may decrease. On the contrary, if the blending amount exceeds 15% by volume, the conductive particles will exist in a connected state between adjacent electrode terminals, which may cause a short circuit.

但是，於分散有導電性粒子之異向性導電膜中，於僅將導電性粒子之摻合量最佳化時，於壓接時大部分之導電性粒子流失，而大量存在無助於導通之導電性粒子。又，因流失之導電性粒子於鄰接之電極端子間形成導電性粒子之粒子聚集體，而有短路之危險。此情況會產生如下問題：電極端子間之間距越狹窄化，危險性越高，而無法充分地應對高密度構裝化。 However, in an anisotropic conductive film in which conductive particles are dispersed, when only the blending amount of conductive particles is optimized, most of the conductive particles are lost during crimping, and a large amount of them does not help conduction The conductive particles. In addition, since the lost conductive particles form particle aggregates of conductive particles between adjacent electrode terminals, there is a risk of short circuit. In this case, the following problem arises: the narrower the distance between the electrode terminals, the higher the risk, and it is impossible to adequately cope with high-density packaging.

根據此種狀況，業界嘗試使異向性導電膜中之導電性粒子均勻地分散於黏合劑樹脂層中，而非無規地分散(例如參照專利文獻1、專利文獻2)。 Under such circumstances, the industry has tried to uniformly disperse the conductive particles in the anisotropic conductive film in the binder resin layer instead of randomly dispersing them (for example, refer to Patent Document 1 and Patent Document 2).

[專利文獻1]WO2005/054388 [Patent Document 1] WO2005/054388

[專利文獻2]日本特開2010-251337號公報 [Patent Document 2] JP 2010-251337 A

專利文獻1中記載有一種異向性導電膜之製造方法，其係於可雙軸延伸之膜上設置黏著層而形成積層體，並密集填充導電性粒子後，使該附著有導電性粒子之膜以導電性粒子間隔成為平均粒徑之1~5倍且為20μm以下之方式進行雙軸延伸並保持，並將其轉黏於絕緣性接著片材。 Patent Document 1 describes a method for producing an anisotropic conductive film, which is to provide an adhesive layer on a biaxially stretchable film to form a laminate, and after densely filling conductive particles, make the conductive particles attached The film is biaxially stretched and held so that the interval of conductive particles becomes 1 to 5 times the average particle diameter and is 20 μm or less, and it is transferred to the insulating adhesive sheet.

又，專利文獻2中記載有根據連接對象物之圖案而使導電性粒子不均分佈之異向性導電膜。 In addition, Patent Document 2 describes an anisotropic conductive film in which conductive particles are unevenly distributed according to the pattern of the object to be connected.

但是，於專利文獻1所記載之發明中，有於雙軸延伸前之步驟中難以密集填充導電性粒子，而容易形成未填充粒子之空疏部分之缺點。若於此 狀態下進行雙軸延伸，則會形成不存在導電性粒子之較大空間，有電子零件之凸塊與配線板之電極端子之間的粒子捕捉性降低，而引起導通不良之虞。又，難以利用雙軸使其精度良好且均勻地延伸。 However, in the invention described in Patent Document 1, there is a disadvantage that it is difficult to densely fill conductive particles in the step before biaxial stretching, and void portions of unfilled particles are easily formed. If here Performing biaxial stretching in the state will form a large space where there are no conductive particles, and the particle capture properties between the bumps of electronic parts and the electrode terminals of the wiring board will decrease, which may cause poor conduction. In addition, it is difficult to use a biaxial to stretch it accurately and uniformly.

於專利文獻2所記載之發明中，由於預先根據電極圖案使導電性粒子不均分佈，故而有於將異向性導電膜貼附於連接對象物時需要對準作業，於連接於窄間距化之電極端子時步驟變得繁雜之虞。又，必須根據連接對象物之電極圖案而改變導電性粒子之不均分佈圖案，不適於量產化。 In the invention described in Patent Document 2, since the conductive particles are distributed unevenly according to the electrode pattern in advance, alignment work is required when attaching the anisotropic conductive film to the connection object, and the connection is narrowed. The steps become complicated when the electrode terminals are used. In addition, the uneven distribution pattern of conductive particles must be changed according to the electrode pattern of the connection object, which is not suitable for mass production.

因此，本發明之目的在於提供一種導電性粒子之分散性、粒子捕捉性優異，即使於窄間距化之端子彼此中，亦可維持導通可靠性的異向性導電膜之製造方法、異向性導電膜、及連接結構體。 Therefore, the object of the present invention is to provide a method for manufacturing an anisotropic conductive film that has excellent dispersibility and particle capture properties of conductive particles, and maintains conduction reliability even in narrow-pitch terminals, and anisotropy Conductive film and connection structure.

為了解決上述課題，本發明之一態樣係含有導電性粒子之異向性導電膜之製造方法，其係於沿同方向形成有連續數個溝槽之片材的上述溝槽埋入導電性粒子，並排列上述導電性粒子，於形成有上述溝槽之側的上述片材表面，層壓可延伸之基礎膜上形成有光或熱硬化性樹脂層之第1樹脂膜的上述樹脂層，使上述導電性粒子轉黏於上述第1樹脂膜之上述樹脂層，將在上述樹脂層轉黏有上述導電性粒子的上述第1樹脂膜於除了與上述導電性粒子之排列方向正交的方向以外之方向上進行單軸延伸，進而於配置有上述導電性粒子之上述第1樹脂膜的上述樹脂層，層壓基礎膜上形成有光或熱硬化性樹脂層之第2樹脂膜。 In order to solve the above-mentioned problems, one aspect of the present invention is a method of manufacturing an anisotropic conductive film containing conductive particles. Particles, the conductive particles are arranged, and the resin layer of the first resin film formed with the light or thermosetting resin layer on the stretchable base film is laminated on the surface of the sheet on the side where the grooves are formed, The conductive particles are transferred to the resin layer of the first resin film, and the first resin film with the conductive particles transferred to the resin layer is transferred in a direction other than the direction orthogonal to the arrangement direction of the conductive particles Uniaxially stretched in a direction other than that, and further on the resin layer of the first resin film in which the conductive particles are arranged, a second resin film in which a light or thermosetting resin layer is formed on the base film is laminated.

又，本發明之另一態樣係至少由2層構成所形成之異向導電性膜，其具備：構成一層之第1樹脂層，層壓於上述第1樹脂層上之第2樹脂層，及於上述第1樹脂層與上述第2樹脂層中至少與上述第1樹脂層接觸之數個導電性粒子；對於上述導電性粒子，於上述第1樹脂層中規則地排列形成於第1方向上之粒子列被規則地並列複數列設置於與上述第1方向不同之第2方向上，對於上述第1樹脂層，上述第1方向上之上述導電性粒子間的部位形成為比上述第2方向 上之上述導電性粒子間的部位薄。 In addition, another aspect of the present invention is an anisotropic conductive film formed of at least two layers, comprising: a first resin layer constituting one layer, and a second resin layer laminated on the first resin layer; And at least a few conductive particles that are in contact with the first resin layer in the first resin layer and the second resin layer; the conductive particles are regularly arranged in the first resin layer and formed in the first direction The upper particle rows are regularly arranged in a plurality of rows in a second direction different from the first direction. For the first resin layer, the portion between the conductive particles in the first direction is formed to be larger than that in the second direction. direction The area between the above-mentioned conductive particles is thin.

進而，本發明之又一態樣係一種連接結構體，係將上述異向導電性膜用於連接電子零件而成。 Furthermore, another aspect of the present invention is a connection structure obtained by using the above-mentioned anisotropic conductive film for connecting electronic parts.

根據本發明之一態樣，由於預先根據片材之溝槽圖案而排列導電性粒子，故而藉由使轉黏有其等之第1樹脂膜單軸延伸，可使導電性粒子均勻地分散。因此，異向性導電膜中所含有之導電性粒子只要為使之均勻地分散於膜之整個面上所需最小限之量即可，無需過量含有。又，異向性導電膜亦無引起由剩餘之導電性粒子所致之端子間短路之虞。又，由於將異向性導電膜之導電性粒子均勻地分散，故而對於窄間距化之電極端子亦可確實地實現導通。 According to one aspect of the present invention, since the conductive particles are arranged in advance according to the groove pattern of the sheet, the conductive particles can be uniformly dispersed by uniaxially extending the first resin film to which they are transferred. Therefore, the conductive particles contained in the anisotropic conductive film need only be the minimum amount required to be uniformly dispersed on the entire surface of the film, and there is no need to excessively contain them. In addition, the anisotropic conductive film is not likely to cause a short circuit between the terminals due to the remaining conductive particles. In addition, since the conductive particles of the anisotropic conductive film are uniformly dispersed, it is possible to reliably achieve conduction to electrode terminals with a narrower pitch.

又，根據本發明之其他態樣，於對應窄間距化之異向性導電膜中，可確實地進行均勻地分散之導電性粒子之位置控制，因此可確實地實現窄間距化之端子彼此之導通。 Furthermore, according to another aspect of the present invention, in the anisotropic conductive film corresponding to the narrowing of the pitch, the position control of the uniformly dispersed conductive particles can be reliably performed, so that the terminal of the narrowed pitch can be reliably realized. Conduction.

進而，根據本發明之又一態樣，可確保連接結構體之基板與電子零件之良好之連接性，而提高持續長時間之連接可靠性。 Furthermore, according to another aspect of the present invention, good connectivity between the substrate of the connection structure and the electronic components can be ensured, and the connection reliability for a long time can be improved.

1、101、201:異向性導電膜 1, 101, 201: Anisotropic conductive film

2、102、202:片材 2, 102, 202: sheet

3、103、203:導電性粒子 3.103, 203: conductive particles

3a、103a、203a:粒子列 3a, 103a, 203a: particle column

4、104、204:第1樹脂膜 4.104, 204: the first resin film

5、105、205:第1樹脂層 5, 105, 205: the first resin layer

5a、5b:部位 5a, 5b: location

5c、5d:懸崖部 5c, 5d: Cliff

6:基礎膜 6: Basic film

7:第2樹脂膜 7: The second resin film

8:第2樹脂層 8: The second resin layer

9:基礎膜 9: Basic film

10、110、210:溝槽 10, 110, 210: groove

220a、220b:側壁 220a, 220b: side wall

215a、215b:側緣部 215a, 215b: side edge

A、F:長度方向 A, F: length direction

B、E:寬度方向 B, E: width direction

C:相對於該電極之長度方向及寬度方向成為鉛垂之方向 C: The length direction and width direction of the electrode are perpendicular to the direction

D:深度 D: depth

S:間隔 S: interval

W、W1、W2:寬度 W, W1, W2: width

X:第1方向 X: 1st direction

Y:第2方向 Y: 2nd direction

V、U:搬送方向 V, U: conveying direction

12、222:刮板 12, 222: scraper

13:傾斜面 13: Inclined surface

14:凸部 14: Convex

15、115、215:凹部 15, 115, 215: recess

16:間隙 16: gap

50:連接結構體 50: connecting structure

52:電子零件 52: Electronic parts

54:基板 54: substrate

56:凸塊 56: bump

58:電極 58: Electrode

102a:間隙部 102a: Clearance part

112:導引體 112: guide body

112a:接觸面 112a: contact surface

112b:突起部 112b: protrusion

112b1:基端部 112b1: Base end

112b2:前端部 112b2: Front end

112b3:斜面部 112b3: inclined face

112c:側壁部 112c: side wall

112d:間隙部 112d: Clearance part

112d1:基端部 112d1: Base end

112d2:前端部 112d2: Front end

220:電極 220: Electrode

圖1A及B係表示於片材之溝槽填充並排列導電性粒子之一例的側視圖。 1A and B are side views showing an example of filling and arranging conductive particles in grooves of a sheet.

圖2A至D係表示應用有本發明之異向性導電膜之製造步驟的剖面圖。 2A to D are cross-sectional views showing the manufacturing steps of the anisotropic conductive film to which the present invention is applied.

圖3A至D係表示片材之各種溝槽圖案的立體圖。 3A to D are perspective views showing various groove patterns of the sheet.

圖4A至J係表示片材之各種溝槽形狀的剖面圖。 4A to J are cross-sectional views showing various groove shapes of the sheet.

圖5係表示第1樹脂膜之延伸步驟的俯視圖。 Fig. 5 is a plan view showing the stretching step of the first resin film.

圖6係表示第1樹脂膜之延伸步驟的俯視圖。 Fig. 6 is a plan view showing the stretching step of the first resin film.

圖7係本發明之第1實施形態之異向性導電膜之部分立體圖。 Fig. 7 is a partial perspective view of the anisotropic conductive film according to the first embodiment of the present invention.

圖8A係圖7之P-P剖面圖，圖8B係圖7之Q-Q剖面圖。 Fig. 8A is a P-P cross-sectional view of Fig. 7 and Fig. 8B is a Q-Q cross-sectional view of Fig. 7.

圖9係表示本發明之第1實施形態之異向性導電膜之導電性粒子之排列狀態的俯視圖。 Fig. 9 is a plan view showing an arrangement state of conductive particles in an anisotropic conductive film according to the first embodiment of the present invention.

圖10係表示應用本發明之第1實施形態之異向性導電膜之連接結構體之構成的概略剖面圖。 Fig. 10 is a schematic cross-sectional view showing the configuration of the connection structure to which the anisotropic conductive film of the first embodiment of the present invention is applied.

圖11A及B係本發明之第2實施形態之異向性導電膜之製造方法中所使用之導引體的概略構成圖。 11A and B are schematic diagrams of the guide used in the manufacturing method of the anisotropic conductive film according to the second embodiment of the present invention.

圖12係表示本發明之第2實施形態之異向性導電膜之製造方法中所使用之片材之概略構成的剖面圖。 Fig. 12 is a cross-sectional view showing a schematic configuration of a sheet used in the method of manufacturing an anisotropic conductive film according to the second embodiment of the present invention.

圖13係說明本發明之第2實施形態之異向性導電膜之製造方法中於片材之溝槽埋入並排列導電性粒子之動作的剖面圖。 13 is a cross-sectional view illustrating the operation of burying and arranging conductive particles in the grooves of the sheet in the method of manufacturing an anisotropic conductive film according to the second embodiment of the present invention.

圖14係表示本發明之第2實施形態之異向性導電膜之製造方法中所製造之異向性導電膜之導電性粒子之排列狀態的俯視圖。 Fig. 14 is a plan view showing the arrangement state of conductive particles in an anisotropic conductive film manufactured in a manufacturing method of an anisotropic conductive film according to a second embodiment of the present invention.

圖15A至C係表示本發明之第3實施形態之異向性導電膜之製造方法中所應用之導電性粒子之填充步驟的剖面圖。 15A to C are cross-sectional views showing the steps of filling conductive particles used in the manufacturing method of the anisotropic conductive film according to the third embodiment of the present invention.

圖16係表示本發明之第3實施形態之異向性導電膜之製造方法中之填充步驟結束後之導電性粒子於片材中之排列狀態的俯視圖。 16 is a plan view showing the arrangement state of conductive particles in the sheet after the filling step in the manufacturing method of the anisotropic conductive film of the third embodiment of the present invention is completed.

圖17係表示本發明之第3實施形態之異向性導電膜之製造方法中所製造之異向性導電膜之導電性粒子之排列狀態的俯視圖。 Fig. 17 is a plan view showing the arrangement state of conductive particles of an anisotropic conductive film manufactured in a manufacturing method of an anisotropic conductive film according to a third embodiment of the present invention.

以下，對於應用有本發明之異向性導電膜之製造方法之較佳實施形態，一邊參照圖式一邊進行詳細說明。再者，本發明並不僅限定於以下之實施形態，當然可於不脫離本發明之要旨之範圍內進行各種變更。又，圖式係示 意性者，有時各尺寸之比率等與實際不同。具體之尺寸等應當參考以下之說明而判斷。又，當然於圖式相互間亦包含相互之尺寸之關係或比率不同之部分。 Hereinafter, a preferred embodiment of the manufacturing method of the anisotropic conductive film to which the present invention is applied will be described in detail with reference to the drawings. In addition, the present invention is not limited to the following embodiments, and of course various modifications can be made without departing from the gist of the present invention. Also, the schematic system shows For the purposeful, sometimes the ratio of each size is different from the actual one. The specific dimensions, etc. should be judged with reference to the following description. In addition, of course, there are also parts with different size relationships or ratios between the drawings.

(第1實施形態) (First Embodiment)

於應用有本發明之異向性導電膜1之製造方法的第1實施形態中，如圖1及圖2所示，包含如下步驟：(1)於沿同方向形成有連續之數個溝槽之片材2之上述溝槽埋入導電性粒子3，並排列導電性粒子3(圖1A、圖1B)；(2)於形成有上述溝槽之側的片材2表面，層壓在可延伸之基礎膜6上形成有光或熱硬化性樹脂層5的第1樹脂膜4之樹脂層5(圖2A)；(3)使導電性粒子3轉黏於第1樹脂膜4之樹脂層5(圖2B)；(4)將在樹脂層5轉黏有導電性粒子3之第1樹脂膜4於除了與導電性粒子3之排列方向正交之方向以外的圖2C中箭頭A方向上進行單軸延伸(圖2C)；(5)進而於配置有導電性粒子3之第1樹脂膜4之樹脂層5，層壓在基礎膜9上形成有光或熱硬化性樹脂層8之第2樹脂膜7(圖2D)。 In the first embodiment of the method for manufacturing the anisotropic conductive film 1 of the present invention, as shown in FIG. 1 and FIG. 2, it includes the following steps: (1) A number of continuous grooves are formed in the same direction The grooves of the sheet 2 are embedded with conductive particles 3, and the conductive particles 3 are arranged (FIG. 1A, FIG. 1B); (2) on the surface of the sheet 2 on the side where the grooves are formed, laminated on The resin layer 5 of the first resin film 4 with the light or thermosetting resin layer 5 formed on the stretched base film 6 (FIG. 2A); (3) the conductive particles 3 are transferred to the resin layer of the first resin film 4 5 (FIG. 2B); (4) The first resin film 4 with conductive particles 3 adhered to the resin layer 5 is in the direction of arrow A in FIG. 2C except for the direction orthogonal to the arrangement direction of the conductive particles 3 Carry out uniaxial stretching (Figure 2C); (5) Furthermore, the resin layer 5 of the first resin film 4 provided with conductive particles 3 is laminated on the base film 9 to form the light or thermosetting resin layer 8 2 Resin film 7 (Figure 2D).

[片材] [Sheet]

如圖3所示，沿同方向形成有連續數個溝槽之片材2例如為形成有特定之溝槽10之樹脂片材，例如可藉由如下方法形成：藉由使顆粒物於熔融狀態下流入至形成有溝槽圖案之模具中，進行冷卻、凝固而轉印特定之溝槽10。或者，片材2可藉由如下方法形成：將形成有溝槽圖案之模具加熱至樹脂片材之軟化點以上之溫度，並將樹脂片材壓抵於該模具而進行轉印。 As shown in FIG. 3, the sheet 2 with continuous grooves formed in the same direction is, for example, a resin sheet formed with specific grooves 10, which can be formed, for example, by the following method: It is poured into a mold formed with a groove pattern, cooled and solidified, and a specific groove 10 is transferred. Alternatively, the sheet 2 may be formed by heating a mold formed with a groove pattern to a temperature above the softening point of the resin sheet, and pressing the resin sheet against the mold to perform transfer.

作為構成片材2之材料，可熱熔融並轉印形成有溝槽10之圖案之模具之形狀的材料均可使用。又，片材2之材料較佳為具有耐溶劑性、耐熱性、脫模性。作為此種樹脂片材，例如可例示聚丙烯、聚乙烯、聚酯、PET、尼龍、離子聚合物、聚乙烯醇、聚碳酸酯、聚苯乙烯、聚丙烯腈、乙烯-乙酸乙烯酯共聚物、乙烯-乙烯醇共聚物、乙烯-甲基丙烯酸共聚物等熱塑性樹脂膜。或者可例示形成有所謂微細凹凸圖案之角柱片材。 As the material constituting the sheet 2, any material that can be thermally melted and transferred to the shape of a mold in which the pattern of the groove 10 is formed can be used. In addition, the material of the sheet 2 preferably has solvent resistance, heat resistance, and mold release properties. Examples of such resin sheets include polypropylene, polyethylene, polyester, PET, nylon, ionomers, polyvinyl alcohol, polycarbonate, polystyrene, polyacrylonitrile, and ethylene-vinyl acetate copolymers. , Ethylene-vinyl alcohol copolymer, ethylene-methacrylic acid copolymer and other thermoplastic resin films. Alternatively, a corner pillar sheet in which a so-called fine concavo-convex pattern is formed can be exemplified.

形成於片材2上之溝槽10之圖案如圖3所示，沿同方向連續之數個溝槽於與該溝槽之長度方向正交之方向上鄰接而形成。溝槽10如圖3A所示，可沿片材2之長度方向使之連續，如圖3B所示，亦可沿相對於片材2之長度方向傾斜之方向使之連續。又，溝槽10如圖3C所示，可沿片材2之長度方向使之蜿蜒(即，「波形狀」)，如圖3D所示，亦可沿片材2之長度方向使之連續成矩形波狀。除此以外，溝槽10可形成為鋸齒狀、格子狀等所有圖案。 The pattern of the groove 10 formed on the sheet 2 is as shown in FIG. The groove 10 can be made continuous along the length direction of the sheet 2 as shown in FIG. 3A. As shown in FIG. Moreover, the groove 10 can be meandered along the length direction of the sheet 2 as shown in Fig. 3C (ie, "wave shape"), as shown in Fig. 3D, or can be made continuous along the length direction of the sheet 2 Into a rectangular wave. In addition to this, the groove 10 may be formed in any pattern such as a sawtooth shape and a lattice shape.

又，溝槽10之形狀如圖4A~J所例示，可採用各種形狀。此時，對於溝槽10，考慮導電性粒子3之易填充性及所填充之導電性粒子3對第1樹脂膜4之易轉黏性而決定各尺寸。若溝槽10相對於導電性粒子3之粒徑過大，則溝槽10之導電性粒子之保持變難而變得填充不足，若溝槽10相對於導電性粒子3之粒徑過小，則導電性粒子3無法進入而變得填充不足，此外亦會嵌入溝槽10內而變得無法轉印至第1樹脂膜4。因此，例如將溝槽10形成為寬度W為導電性粒子3之粒徑之1倍~未達2.5倍，且深度D為導電性粒子3之粒徑之0.5~2倍。又，較佳為將溝槽10之寬度W設為導電性粒子3之粒徑之1倍~未達2倍，且將深度D設為導電性粒子3之粒徑之0.5~1.5倍。 In addition, the shape of the groove 10 is illustrated in FIGS. 4A to 4J, and various shapes can be adopted. At this time, for the trench 10, each size is determined in consideration of the easy filling property of the conductive particles 3 and the easy transfer adhesiveness of the filled conductive particles 3 to the first resin film 4. If the particle diameter of the groove 10 with respect to the conductive particles 3 is too large, it becomes difficult to hold the conductive particles in the groove 10 and becomes insufficiently filled. If the particle diameter of the groove 10 with respect to the conductive particles 3 is too small, it becomes conductive. The sexual particles 3 cannot enter and become insufficiently filled. In addition, they are embedded in the groove 10 and cannot be transferred to the first resin film 4. Therefore, for example, the trench 10 is formed so that the width W is 1 to less than 2.5 times the particle diameter of the conductive particles 3 and the depth D is 0.5 to 2 times the particle diameter of the conductive particles 3. Moreover, it is preferable to set the width W of the trench 10 to be 1 to less than 2 times the particle diameter of the conductive particles 3 and to set the depth D to 0.5 to 1.5 times the particle diameter of the conductive particles 3.

[導電性粒子] [Conductive particles]

作為導電性粒子3，可列舉異向性導電膜中所使用之公知之任何導電性粒子。作為導電性粒子3，例如可列舉鎳、鐵、銅、鋁、錫、鉛、鉻、鈷、銀、金等各種金屬或金屬合金之粒子，於金屬氧化物、碳、石墨、玻璃、陶瓷、塑膠等之粒子之表面塗佈金屬而成者，或於該等粒子之表面進而塗佈絕緣薄膜而成者等。於為在樹脂粒子之表面塗佈金屬而成者之情形時，作為樹脂粒子，例如可列舉環氧樹脂、酚樹脂、丙烯酸樹脂、丙烯腈-苯乙烯(AS)樹脂、苯胍樹脂、二乙烯基苯系樹脂、苯乙烯系樹脂等之粒子。 As the conductive particles 3, any known conductive particles used in the anisotropic conductive film can be cited. As the conductive particles 3, for example, particles of various metals or metal alloys such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, gold, etc., are used in metal oxides, carbon, graphite, glass, ceramics, The surface of particles of plastic, etc. is coated with metal, or the surface of the particles is further coated with an insulating film, etc. In the case of resin particles coated with metal, examples of the resin particles include epoxy resins, phenol resins, acrylic resins, acrylonitrile-styrene (AS) resins, benzoguanidine resins, and diethylene resins. Particles of benzene series resin, styrene series resin, etc.

此種導電性粒子3因為被填充於片材2之溝槽10中而沿溝槽10排 列。例如，導電性粒子3如圖1A所示，藉由密接於片材2之表面的刮板12而被填充於溝槽10內。片材2配置於傾斜面13上，並且向圖1A中箭頭V所示之下方搬送。導電性粒子3藉由刮板12而被供於片材2之搬送方向上游側，隨著片材2之搬送而逐漸填充、排列於溝槽10內。 Such conductive particles 3 are arranged along the groove 10 because they are filled in the groove 10 of the sheet 2 List. For example, as shown in FIG. 1A, the conductive particles 3 are filled in the groove 10 by the squeegee 12 which is in close contact with the surface of the sheet 2. The sheet 2 is arranged on the inclined surface 13, and is conveyed downward as indicated by the arrow V in FIG. 1A. The conductive particles 3 are supplied to the upstream side in the conveyance direction of the sheet 2 by the squeegee 12, and are gradually filled and arranged in the groove 10 as the sheet 2 is conveyed.

再者，如圖1B所示，導電性粒子3亦可藉由向箭頭U所示之傾斜面13之上方搬送之片材2之刮板12而被供於搬送方向上游側，隨著片材2之搬送而填充、排列於溝槽10內。又，對於導電性粒子3，除了使用刮板12之方法以外，亦可將導電性粒子3撒在片材2之形成有溝槽10之面之後，使超音波振動、風力、靜電、自片材2之背面側之磁力等一個或數個外力發揮作用，而將其填充、排列於溝槽10中。進而，導電性粒子3可於潮濕狀態下進行填充、排列於溝槽10中之處理(濕式)，或者亦可於乾燥狀態下進行處理(乾式)。 Furthermore, as shown in FIG. 1B, the conductive particles 3 can also be supplied to the upstream side in the conveying direction by the scraper 12 of the sheet 2 conveyed above the inclined surface 13 shown by the arrow U, as the sheet 2 is transported and filled and arranged in the trench 10. Moreover, for the conductive particles 3, in addition to the method of using the scraper 12, the conductive particles 3 may be sprinkled on the surface of the sheet 2 where the grooves 10 are formed, and then subjected to ultrasonic vibration, wind, static electricity, or the like. One or more external forces, such as the magnetic force on the back side of the material 2, act, and these are filled and arranged in the groove 10. Furthermore, the conductive particles 3 may be filled and arranged in the trench 10 in a wet state (wet type), or may be processed in a dry state (dry type).

[第1樹脂膜/樹脂層/延伸性基礎膜] [First resin film/resin layer/extensible base film]

層壓於「在溝槽10中填充、排列有導電性粒子3之片材2」的第1樹脂膜4係於可延伸之基礎膜6上形成有光或熱硬化性樹脂層5的熱硬化型或紫外線硬化型接著膜。第1樹脂膜4藉由層壓於片材2，轉黏以溝槽10之圖案排列之導電性粒子3，而構成異向性導電膜1。 The first resin film 4 laminated on the "sheet 2 filled with and arranged with conductive particles 3 in the groove 10" is thermally cured by forming a light or thermosetting resin layer 5 on the stretchable base film 6 Type or UV-curing adhesive film. The first resin film 4 is laminated on the sheet 2 and the conductive particles 3 arranged in the pattern of the grooves 10 are trans-bonded to form the anisotropic conductive film 1.

第1樹脂膜4例如係藉由將含有膜形成樹脂、熱硬化性樹脂、潛伏性硬化劑、矽烷偶合劑等的通常之黏合劑樹脂(接著劑)塗佈於基礎膜6上而形成樹脂層5，並將其成型為膜狀而成者。 The first resin film 4 is formed by, for example, coating a general binder resin (adhesive) containing a film forming resin, a thermosetting resin, a latent curing agent, a silane coupling agent, etc. on the base film 6 to form a resin layer. 5. It is formed into a film shape.

可延伸之基礎膜6例如係於PET(Poly Ethylene Terephthalate，聚對苯二甲酸乙二酯)、OPP(Oriented Polypropylene，延伸聚丙烯)、PMP(Poly-4-methlpentene-1，聚4-甲基戊烯-1)、PTFE(Polytetrafluoroethylene，聚四氟乙烯)等塗佈聚矽氧等剝離劑而成。 The stretchable base film 6 is, for example, PET (Poly Ethylene Terephthalate), OPP (Oriented Polypropylene), PMP (Poly-4-methlpentene-1, poly 4-methyl Pentene-1), PTFE (Polytetrafluoroethylene, polytetrafluoroethylene), etc. are coated with silicone and other release agents.

作為構成樹脂層5之膜形成樹脂，較佳為平均分子量為10000~ 80000左右之樹脂。作為膜形成樹脂，可列舉環氧樹脂、改質環氧樹脂、胺甲酸乙酯樹脂、苯氧基樹脂等各種樹脂。其中，就膜形成狀態、連接可靠性等觀點而言，尤佳為苯氧基樹脂。 The film forming resin constituting the resin layer 5 preferably has an average molecular weight of 10,000~ About 80,000 resin. As the film-forming resin, various resins such as epoxy resin, modified epoxy resin, urethane resin, and phenoxy resin can be cited. Among them, from the viewpoints of the film formation state, connection reliability, and the like, phenoxy resin is particularly preferred.

作為熱硬化性樹脂並無特別限定，例如可列舉市售之環氧樹脂、丙烯酸樹脂等。 It does not specifically limit as a thermosetting resin, For example, a commercially available epoxy resin, an acrylic resin, etc. are mentioned.

作為環氧樹脂並無特別限定，例如可列舉萘型環氧樹脂、聯苯型環氧樹脂、酚系酚醛清漆型環氧樹脂、雙酚型環氧樹脂、茋型環氧樹脂、三酚甲烷型環氧樹脂、酚芳烷基型環氧樹脂、萘酚型環氧樹脂、二環戊二烯型環氧樹脂、三苯甲烷型環氧樹脂等。該等可單獨使用，亦可組合使用2種以上。 The epoxy resin is not particularly limited, and examples thereof include naphthalene type epoxy resins, biphenyl type epoxy resins, phenol novolac type epoxy resins, bisphenol type epoxy resins, stilbene type epoxy resins, and trisphenol methane. Type epoxy resin, phenol aralkyl type epoxy resin, naphthol type epoxy resin, dicyclopentadiene type epoxy resin, triphenylmethane type epoxy resin, etc. These can be used individually or in combination of 2 or more types.

作為丙烯酸樹脂並無特別限制，可根據目的而適當選擇丙烯酸化合物、液狀丙烯酸酯等。例如可列舉丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、環氧丙烯酸酯、乙二醇二丙烯酸酯、二乙二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、二羥甲基三環癸烷二丙烯酸酯、1,4-丁二醇四丙烯酸酯、2-羥基-1,3-二丙烯醯氧基丙烷、2,2-雙[4-(丙烯醯氧基甲氧基)苯基]丙烷、2,2-雙[4-(丙烯醯氧基乙氧基)苯基]丙烷、二環戊烯基丙烯酸酯、丙烯酸三環癸酯、異氰尿酸三(丙烯醯氧基乙基)酯、丙烯酸胺甲酸乙酯、環氧丙烯酸酯等。再者，亦可使用將丙烯酸酯變為甲基丙烯酸酯者。該等可單獨使用1種，亦可併用2種以上。 The acrylic resin is not particularly limited, and an acrylic compound, liquid acrylate, etc. can be appropriately selected according to the purpose. For example, methyl acrylate, ethyl acrylate, isopropyl acrylate, isobutyl acrylate, epoxy acrylate, ethylene glycol diacrylate, diethylene glycol diacrylate, trimethylolpropane triacrylate, Dimethylol tricyclodecane diacrylate, 1,4-butanediol tetraacrylate, 2-hydroxy-1,3-dipropenyloxypropane, 2,2-bis[4-(propylene oxide Methoxy)phenyl]propane, 2,2-bis[4-(propenyloxyethoxy)phenyl]propane, dicyclopentenyl acrylate, tricyclodecyl acrylate, tricyclodecyl isocyanurate (Acryloxyethyl) ester, urethane acrylate, epoxy acrylate, etc. Furthermore, it is also possible to use what changed acrylate to methacrylate. These may be used individually by 1 type, and may use 2 or more types together.

作為潛伏性硬化劑並無特別限定，例如可列舉加熱硬化型、UV硬化型等之各種硬化劑。潛伏性硬化劑於通常條件下不反應，藉由熱、光、加壓等根據用途選擇之各種引發條件而活性化，並開始反應。熱活性型潛伏性硬化劑之活性化方法有如下方法：藉由利用加熱所致之解離反應等而生成活性物質(陽離子或陰離子、自由基)之方法；於室溫附近穩定地分散於環氧樹脂中，於高溫下與環氧樹脂相溶、溶解，而開始硬化反應之方法；使分子篩封入型硬 化劑於高溫下溶出而開始硬化反應之方法；利用微膠囊之溶出、硬化方法等。作為熱活性型潛伏性硬化劑，有咪唑系、醯肼系、三氟化硼-胺錯合物、鋶鹽、胺醯亞胺、聚胺鹽、雙氰胺等或該等之改質物，該等可單獨使用，亦可為2種以上之混合體。其中，較佳為微膠囊型咪唑系潛伏性硬化劑。 The latent curing agent is not particularly limited, and examples thereof include various curing agents such as heat curing type and UV curing type. The latent hardener does not react under normal conditions, but is activated by various initiation conditions selected according to the application, such as heat, light, and pressure, and starts the reaction. The activation method of the thermally active latent hardener includes the following methods: a method of generating active substances (cations, anions, and free radicals) by dissociation reactions caused by heating, etc.; and stably dispersed in the epoxy near room temperature In the resin, it is compatible and dissolved with the epoxy resin at high temperature, and the hardening reaction is started; the molecular sieve is sealed in the hard The method of dissolving the chemical agent at high temperature to start the hardening reaction; the method of dissolving and hardening using microcapsules. As thermally active latent hardeners, there are imidazole series, hydrazine series, boron trifluoride-amine complexes, sulfonium salts, amine imines, polyamine salts, dicyandiamide, etc. or their modified products, These can be used alone, or a mixture of two or more kinds. Among them, a microcapsule type imidazole-based latent sclerosing agent is preferred.

作為矽烷偶合劑並無特別限定，例如可列舉環氧系、胺系、巰基-硫化物系、醯脲系等。藉由添加矽烷偶合劑，會提高有機材料與無機材料之界面處之接著性。 The silane coupling agent is not particularly limited, and examples thereof include epoxy-based, amine-based, mercapto-sulfide-based, and urea-based. By adding a silane coupling agent, the adhesion at the interface between the organic material and the inorganic material will be improved.

再者，就使用之容易性、保存穩定性等觀點而言，第1樹脂膜4亦可設為於與樹脂層5之積層有基礎膜6之面相反之面側設置覆蓋膜之構成。又，第1樹脂膜4之形狀並無特別限定，但藉由設為可捲繞於捲取盤上之長條片材形狀，可僅切割特定之長度而使用。 In addition, from the viewpoints of ease of use, storage stability, and the like, the first resin film 4 may be configured to provide a cover film on the side opposite to the surface of the resin layer 5 on which the base film 6 is laminated. In addition, the shape of the first resin film 4 is not particularly limited, but by setting it as a long sheet shape that can be wound on a take-up reel, it can be cut to a specific length and used.

[第2樹脂膜] [Second resin film]

又，層壓於「轉黏有導電性粒子3之第1樹脂膜4」之第2樹脂膜7與第1樹脂膜4同樣地亦為於基礎膜9上形成有光或熱硬化性樹脂層8的熱硬化型或紫外線硬化型接著膜。第2樹脂膜7之樹脂層8可使用與第1樹脂膜4之樹脂層5相同者，基礎膜9可使用與第1樹脂膜4之基礎膜6相同者。第2樹脂膜7藉由層壓於轉黏有導電性粒子3之第1樹脂膜4，而與第1樹脂膜4一同構成異向性導電膜1。 In addition, the second resin film 7 laminated on the "first resin film 4 to which conductive particles 3 are trans-bonded" is the same as the first resin film 4 with a light or thermosetting resin layer formed on the base film 9 8 thermosetting or ultraviolet curing adhesive film. The resin layer 8 of the second resin film 7 can be the same as the resin layer 5 of the first resin film 4, and the base film 9 can be the same as the base film 6 of the first resin film 4. The second resin film 7 is laminated on the first resin film 4 to which the conductive particles 3 are trans-bonded to form the anisotropic conductive film 1 together with the first resin film 4.

對於此種異向性導電膜1，藉由在剝離基礎膜6、9後，例如將其夾入電子零件之凸塊與配線板之電極端子之間，並利用加熱推壓頭(未圖示)進行加熱及加壓，而使之流動化並將導電性粒子3於凸塊與電極端子之間壓碎，藉由加熱或紫外線照射，而使導電性粒子3於壓碎之狀態下硬化。藉此，異向性導電膜1將電子零件與配線板電性、機械地連接。 For this kind of anisotropic conductive film 1, after peeling off the base films 6, 9, for example, sandwich it between the bumps of the electronic parts and the electrode terminals of the wiring board, and use a heated pressing head (not shown) ) The conductive particles 3 are crushed between the bumps and the electrode terminals by heating and pressurizing to fluidize them, and the conductive particles 3 are cured in a crushed state by heating or ultraviolet irradiation. Thereby, the anisotropic conductive film 1 electrically and mechanically connects the electronic component and the wiring board.

[異向性導電膜之製造方法] [Manufacturing method of anisotropic conductive film]

其次，對異向性導電膜1之製造步驟進行說明。 Next, the manufacturing process of the anisotropic conductive film 1 is demonstrated.

首先，於以特定之圖案形成有溝槽10之片材2的上述溝槽10中填充、排列導電性粒子3(參照圖1A、圖1B)。導電性粒子3於溝槽10中之填充、排列可使用如下方法：使用刮板之方法，或使超音波振動、風力、靜電、自片材2之背面側之磁力等一個或數個外力發揮作用之方法等。 First, conductive particles 3 are filled and arranged in the above-mentioned grooves 10 of the sheet 2 in which grooves 10 are formed in a specific pattern (see FIGS. 1A and 1B). The conductive particles 3 can be filled and arranged in the groove 10 using the following methods: using a scraper, or using one or more external forces such as ultrasonic vibration, wind, static electricity, and magnetic force from the back side of the sheet 2 Methods of action, etc.

其次，於排列有導電性粒子3之側的片材2表面，層壓第1樹脂膜4之樹脂層5(參照圖2A)。層壓係藉由如下方式進行：將樹脂層5配置於片材2表面後，利用加熱推壓頭於低壓下進行推壓，並適當地於使黏合劑樹脂顯示黏性但不開始熱硬化之溫度下進行短時間之熱加壓。 Next, the resin layer 5 of the first resin film 4 is laminated on the surface of the sheet 2 on the side where the conductive particles 3 are arranged (see FIG. 2A). The lamination is carried out by the following method: After the resin layer 5 is placed on the surface of the sheet 2, it is pressed under a low pressure with a heated pressing head, and the adhesive resin is appropriately made to show viscosity but does not start to heat hard. Heat and press for a short time at temperature.

藉由在層壓第1樹脂膜4並冷卻後，將片材2與第1樹脂膜4剝離，而使導電性粒子3轉黏於第1樹脂膜4(參照圖2B)。關於第1樹脂膜4，導電性粒子3以相對應於溝槽10之圖案的圖案而排列於樹脂層5之表面。 After the first resin film 4 is laminated and cooled, the sheet 2 and the first resin film 4 are peeled off, so that the conductive particles 3 are trans-adhered to the first resin film 4 (see FIG. 2B). Regarding the first resin film 4, the conductive particles 3 are arranged on the surface of the resin layer 5 in a pattern corresponding to the pattern of the groove 10.

其次，將第1樹脂膜4在除了與導電性粒子3之排列方向正交之方向以外的方向上進行單軸延伸(參照圖2C)。藉此，如圖5、圖6所示，使導電性粒子3分散。此處，自延伸方向中除去與導電性粒子3之排列方向正交之方向之原因在於：於該方向上，導電性粒子3已因對應於溝槽10之圖案排列而分離。並且，藉由將第1樹脂膜4於除該方向以外之方向上進行單軸延伸，可使於排列方向上密接之導電性粒子3分離。 Next, the first resin film 4 is uniaxially stretched in a direction other than the direction orthogonal to the arrangement direction of the conductive particles 3 (see FIG. 2C). As a result, as shown in FIGS. 5 and 6, the conductive particles 3 are dispersed. Here, the reason why the direction orthogonal to the arrangement direction of the conductive particles 3 is removed from the extending direction is that in this direction, the conductive particles 3 are already separated by the pattern arrangement corresponding to the grooves 10. In addition, by uniaxially extending the first resin film 4 in a direction other than this direction, the conductive particles 3 that are in close contact with each other in the arrangement direction can be separated.

因此，於圖5中，較佳為使其向同圖中箭頭A方向延伸，而不向箭頭Z方向延伸。又，於圖6中，較佳為使其向除同圖中箭頭Z方向以外之任一方向，例如向第1樹脂膜4之長度方向即同圖中箭頭A方向延伸。 Therefore, in FIG. 5, it is preferable to extend in the direction of arrow A in the same figure, rather than in the direction of arrow Z. In addition, in FIG. 6, it is preferable to extend in any direction other than the direction of arrow Z in the same figure, for example, in the longitudinal direction of the first resin film 4, that is, in the direction of arrow A in the same figure.

第1樹脂膜4之延伸例如可藉由使用縮放方式之延伸機，於130℃之烘箱中於單軸方向上延伸200%而進行。又，藉由在第1樹脂膜4之長度方向上進行單軸延伸，可精度良好且容易地使之延伸。 The stretching of the first resin film 4 can be performed by, for example, stretching 200% in a uniaxial direction in an oven at 130° C. using a zoom-type stretching machine. In addition, by uniaxially stretching in the longitudinal direction of the first resin film 4, it can be stretched accurately and easily.

其次，於配置有導電性粒子3之第1樹脂膜4之樹脂層5，層壓第2 樹脂膜7之樹脂層8(參照圖2D)。第2樹脂膜7之層壓係藉由如下方式進行：將樹脂層8配置於第1樹脂膜4之樹脂層5表面之後，利用加熱推壓頭於低壓下進行推壓，並適當地於使黏合劑樹脂顯示黏性但不開始熱硬化之溫度下，於短時間內進行熱加壓。 Next, on the resin layer 5 of the first resin film 4 on which the conductive particles 3 are arranged, a second The resin layer 8 of the resin film 7 (refer to FIG. 2D). The lamination of the second resin film 7 is carried out by the following method: After the resin layer 8 is arranged on the surface of the resin layer 5 of the first resin film 4, it is pressed under a low pressure with a heating press head, and appropriately used The adhesive resin is hot and pressurized in a short time at a temperature at which the adhesive resin exhibits viscosity but does not start to harden.

由此，製造異向性導電膜1。根據該異向性導電膜1，由於預先根據片材2之溝槽10之圖案而排列導電性粒子3，故而藉由使轉黏有其等之第1樹脂膜4單軸延伸，可使導電性粒子3均勻地分散。因此，異向性導電膜1中所含有之導電性粒子3只要為使之均勻地分散於膜整個面上所需最小限之量即可，無需過量含有。又，異向性導電膜1亦無引起由剩餘之導電性粒子3所導致之端子間短路之虞。又，由於使異向性導電膜1之導電性粒子3均勻地分散，故而對於窄間距化之電極端子亦可確實地實現導通。 Thus, the anisotropic conductive film 1 is manufactured. According to the anisotropic conductive film 1, since the conductive particles 3 are arranged in advance according to the pattern of the grooves 10 of the sheet 2, by uniaxially extending the first resin film 4 to which they are transferred, the conductive particles 3 can be made conductive The sexual particles 3 are uniformly dispersed. Therefore, the conductive particles 3 contained in the anisotropic conductive film 1 need only be the minimum amount required to be uniformly dispersed on the entire surface of the film, and there is no need to excessively contain them. In addition, the anisotropic conductive film 1 is not likely to cause a short circuit between the terminals caused by the remaining conductive particles 3. In addition, since the conductive particles 3 of the anisotropic conductive film 1 are uniformly dispersed, it is possible to reliably achieve electrical conduction for electrode terminals with a narrower pitch.

再者，如上所述，於本發明之一實施形態之異向性導電膜之製造方法中，於進行單軸延伸時延伸200%，換言之，即以比該第1樹脂膜4之原始長度之150%長之方式延伸，但延伸率並無特別限定。即，於將含友轉黏有導電性粒子3之第1樹脂層5的第1樹脂膜4於除了與導電性粒子3之排列方向正交之方向以外的方向上進行單軸延伸時，亦可以比150%長之方式進行單軸延伸，而製造異向性導電膜1。再者，於本實施形態中，如下述實施例中所記載，於將第1樹脂膜4進行單軸延伸時，確認可應用延伸率至多700%。又，本發明之第1實施形態之異向性導電膜1之製造方法並不限定於700%以下。 Furthermore, as described above, in the manufacturing method of the anisotropic conductive film of one embodiment of the present invention, the extension is 200% when uniaxially stretched, in other words, it is longer than the original length of the first resin film 4 It is extended by 150% length, but the elongation is not particularly limited. That is, when the first resin film 4 containing the first resin layer 5 to which the conductive particles 3 are adhered is uniaxially stretched in a direction other than the direction orthogonal to the arrangement direction of the conductive particles 3, it is also The anisotropic conductive film 1 can be produced by uniaxial stretching so as to be longer than 150%. Furthermore, in this embodiment, as described in the following examples, when the first resin film 4 is uniaxially stretched, it is confirmed that the applicable elongation rate is up to 700%. In addition, the manufacturing method of the anisotropic conductive film 1 of the first embodiment of the present invention is not limited to 700% or less.

如此，藉由以比第1樹脂膜4之原始長度之150%長之方式進行單軸延伸，可實現異向性導電膜1之短路發生率之降低。又，於製造用於電極端子之間隔具有某程度以上之大小之連接結構體等的異向性導電膜時，亦可應用本實施形態之異向性導電膜之製造方法，而製造確實地實現端子間之導通之異向性導電膜。即，本實施形態之異向性導電膜之製造方法亦可應用於微間距應對 以外之異向性導電膜之製法中。 In this way, by uniaxially stretching so as to be longer than 150% of the original length of the first resin film 4, it is possible to reduce the incidence of short circuits of the anisotropic conductive film 1. Moreover, when manufacturing an anisotropic conductive film for a connection structure having a size greater than a certain level between the electrode terminals, the manufacturing method of the anisotropic conductive film of this embodiment can also be applied, and the manufacturing can be achieved reliably Anisotropic conductive film for conduction between terminals. That is, the manufacturing method of the anisotropic conductive film of this embodiment can also be applied to the fine pitch In the manufacturing method of other anisotropic conductive film.

[異向性導電膜] [Anisotropic conductive film]

其次，針對本發明之第1實施形態之異向性導電膜之構成，一邊使用圖式一邊進行說明。圖7係本發明之第1實施形態之異向性導電膜之部分立體圖，圖8A係圖7之P-P剖面圖，圖8B係圖7之Q-Q剖面圖，圖9係表示本發明之第1實施形態之異向性導電膜之導電性粒子之排列狀態的俯視圖。 Next, the structure of the anisotropic conductive film according to the first embodiment of the present invention will be described using the drawings. Fig. 7 is a partial perspective view of the anisotropic conductive film of the first embodiment of the present invention, Fig. 8A is a cross-sectional view of PP in Fig. 7, Fig. 8B is a cross-sectional view of QQ in Fig. 7, and Fig. 9 shows the first embodiment of the present invention The top view of the arrangement state of the conductive particles of the anisotropic conductive film.

如圖7所示，本實施形態之異向性導電膜1由含有第1樹脂膜4與第2樹脂膜7之2層以上之膜層構成。第1樹脂膜4係藉由將黏合劑樹脂(接著劑)塗佈於基礎膜6上而形成樹脂層(第1樹脂層)5，並將其成型為膜狀而成之樹脂膜。第2樹脂膜7係於基礎膜9上形成有光或熱硬化性樹脂層(第2樹脂層)8之熱硬化型或紫外線硬化型接著膜，且係層壓於含有轉黏有數個導電性粒子3之第1樹脂層5的第1樹脂膜4上之樹脂膜。 As shown in FIG. 7, the anisotropic conductive film 1 of this embodiment is composed of two or more film layers including a first resin film 4 and a second resin film 7. The first resin film 4 is a resin film formed by coating a binder resin (adhesive) on the base film 6 to form a resin layer (first resin layer) 5 and molding it into a film shape. The second resin film 7 is a thermosetting or ultraviolet curing adhesive film in which a light or thermosetting resin layer (second resin layer) 8 is formed on the base film 9, and is laminated on the base film 9 with several conductive adhesives. The resin film on the first resin film 4 of the first resin layer 5 of the particles 3.

如此，本實施形態之異向性導電膜1成為使第2樹脂膜7層壓於第1樹脂膜4，並於第1樹脂層5與第2樹脂層8之間保持數個導電性粒子3之構成。再者，於本實施形態中，異向性導電膜1係以由第1樹脂層5與基礎膜6所構成之第1樹脂膜4及由第2樹脂層8與基礎膜9所構成之第2樹脂膜7此2層構成，但異向性導電膜1只要為至少由2層構成所構成者即可，因此例如對於層壓有第3樹脂層等其他樹脂層之構成之異向性導電膜，亦可應用本發明之一實施形態之異向性導電膜1。 In this way, in the anisotropic conductive film 1 of this embodiment, the second resin film 7 is laminated on the first resin film 4, and several conductive particles 3 are held between the first resin layer 5 and the second resin layer 8. The composition. Furthermore, in this embodiment, the anisotropic conductive film 1 is composed of a first resin film 4 composed of a first resin layer 5 and a base film 6 and a second resin film 4 composed of a second resin layer 8 and a base film 9 2 resin film 7 is a two-layer structure, but the anisotropic conductive film 1 only needs to be composed of at least two layers. Therefore, for example, for anisotropic conductive film with a structure in which other resin layers such as a third resin layer are laminated As the film, the anisotropic conductive film 1 of one embodiment of the present invention can also be applied.

如圖7所示，導電性粒子3係於第1樹脂層5中，於X方向(第1方向)上規則地排列而形成。又，藉由將粒子列3a於與X方向不同之Y方向(第2方向)上規則地複數並列，而使該等導電性粒子3成為分散之狀態。又，導電性粒子3亦可以特定之間隔而排列。於本實施形態中，如圖7及圖8A所示，第1樹脂層5之粒子列5a之各列間成為以向X方向延伸之方式形成為山脊狀之凸部14。 即，於第1樹脂層5中，向X方向延伸之凸部14於Y方向上每隔特定之間隔被形成。 As shown in FIG. 7, the electroconductive particle 3 is formed in the 1st resin layer 5, arrange|positioned regularly in the X direction (1st direction). In addition, by arranging the particle rows 3a regularly and plurally in the Y direction (second direction) different from the X direction, the conductive particles 3 are in a dispersed state. In addition, the conductive particles 3 may be arranged at specific intervals. In this embodiment, as shown in FIG. 7 and FIG. 8A, between each row of the particle row 5a of the first resin layer 5 is a ridge-like convex portion 14 formed so as to extend in the X direction. That is, in the first resin layer 5, the convex portions 14 extending in the X direction are formed at specific intervals in the Y direction.

並且，如圖7所示，於第1樹脂層5中，於該等凸部14之間形成向X方向延伸之溝槽形狀之凹部15，將導電性粒子3規則地配置於該等凹部15內。再者，亦有該X方向(第1方向)與Y方向(第2方向)之方向性表現為光學差異之情形。其原因在於：藉由在X方向上延伸第1樹脂層5，而於導電性粒子3之間產生大量成為溝槽形狀之空隙。該空隙為下述間隙16。此種空隙係由於將導電性粒子3於排列為直線狀之狀態下進行延伸而產生。即，於延伸時之導電性粒子3附近之至少1個大致直線狀中，產生不具備第1樹脂層5，或接近其之狀態，其會對導電性粒子3之壓接時之移動性產生影響。其亦與下述凹部15及凸部14相關聯。 And, as shown in FIG. 7, in the first resin layer 5, groove-shaped concave portions 15 extending in the X direction are formed between the convex portions 14, and the conductive particles 3 are regularly arranged in the concave portions 15 Inside. Furthermore, there are cases where the directivity between the X direction (first direction) and the Y direction (second direction) exhibits an optical difference. The reason is that by extending the first resin layer 5 in the X direction, a large number of groove-shaped voids are generated between the conductive particles 3. This gap is the gap 16 described below. Such voids are generated by extending the conductive particles 3 in a state in which they are arranged linearly. That is, in at least one approximately linear shape near the conductive particles 3 during stretching, there is a state that does not have the first resin layer 5 or is close to it, which will affect the mobility of the conductive particles 3 during pressure bonding. Influence. It is also related to the recessed portion 15 and the convex portion 14 described below.

再者，由於該間隙16係於使第1樹脂膜4延伸時產生之空隙，故而導電性粒子3附近之延伸方向上之第1樹脂層5之厚度會產生如陡峭之懸崖之狀態。如上所述，由於在第1樹脂膜4之延伸方向上產生該狀態，故而如圖8B所示，於第1方向上之導電性粒子3之間，成為2處相同之懸崖部5c、5d大致直線狀地保持導電性粒子3之狀態。藉此，變得依存於接合時導電性粒子3移動之情形時之方向。又，於本實施形態中，所謂X方向(第1方向)表示異向性導電膜1之長度方向，所謂Y方向(第2方向)表示異向性導電膜1之寬度方向。 Furthermore, since the gap 16 is a void generated when the first resin film 4 is stretched, the thickness of the first resin layer 5 in the extension direction near the conductive particles 3 will be like a steep cliff. As described above, since this state occurs in the extending direction of the first resin film 4, as shown in FIG. 8B, between the conductive particles 3 in the first direction, two identical cliff portions 5c, 5d are approximately The state of the conductive particles 3 is maintained linearly. Thereby, it becomes dependent on the direction when the conductive particle 3 moves at the time of joining. In addition, in this embodiment, the X direction (first direction) represents the longitudinal direction of the anisotropic conductive film 1, and the Y direction (second direction) represents the width direction of the anisotropic conductive film 1.

如上所述，於第1樹脂層5中，以向X方向延伸之方式，數個凸部14與凹部15分別並列地形成。並且，於各凹部15中，數個導電性粒子3規則地排列，因此於該凹部15中，構成粒子列3a之導電性粒子3之間成為間隙16，如圖7及圖8B所示，於該間隙16中滲入有第2樹脂層8。如此，將導電性粒子3分散保持於第1樹脂層5與第2樹脂層8之間。再者，於本實施形態中，成為將導電性粒子3分散保持於第1樹脂層5與第2樹脂層8之間之構成，但導電性粒子3於藉由轉印時之外力等而埋沒於第1樹脂層5中並進行延伸之情形時，僅存在於第1樹脂層5 內。本發明之一實施形態係設為亦包含將導電性粒子3埋沒於第1樹脂層5中之後進行延伸而成之構成者。即，本實施形態之異向性導電膜1亦包含使導電性粒子3於第1樹脂層5與第2樹脂層8中，至少僅與第1樹脂層5接觸之構成者。於該情形時，導電性粒子3附近之第1樹脂層5亦成為大致直線狀地有2處相同之懸崖部5c、5d之狀態。其原因如上所示。 As described above, in the first resin layer 5, a plurality of convex portions 14 and concave portions 15 are formed in parallel so as to extend in the X direction. In addition, in each recessed portion 15, a number of conductive particles 3 are regularly arranged, so in the recessed portion 15, the gaps 16 are formed between the conductive particles 3 constituting the particle row 3a, as shown in FIGS. 7 and 8B. The second resin layer 8 penetrates into the gap 16. In this manner, the conductive particles 3 are dispersed and held between the first resin layer 5 and the second resin layer 8. Furthermore, in this embodiment, the conductive particles 3 are dispersed and held between the first resin layer 5 and the second resin layer 8. However, the conductive particles 3 are buried by external force during transfer. In the case of stretching in the first resin layer 5, it only exists in the first resin layer 5 Inside. One embodiment of the present invention also includes a configuration in which the conductive particles 3 are buried in the first resin layer 5 and then stretched. That is, the anisotropic conductive film 1 of the present embodiment also includes a configuration in which the conductive particles 3 are in contact with at least the first resin layer 5 in the first resin layer 5 and the second resin layer 8. In this case, the first resin layer 5 in the vicinity of the conductive particles 3 is also in a state in which there are two identical cliff portions 5c and 5d substantially linearly. The reason is as shown above.

如此，於本實施形態中，於應對窄間距化之異向性導電膜1中，可確實地控制均勻分散之導電性粒子3之位置，因此可確實地實現窄間距化之端子彼此之導通。再者，於本實施形態中，為了保持異向性導電膜1之連接可靠性，異向性導電膜1成為X方向上之導電性粒子3之間隔略大於Y方向上之導電性粒子3之間隔之構成，例如理想為設為大到導電性粒子3之直徑之一半左右之構成。 In this way, in the present embodiment, in the anisotropic conductive film 1 that responds to the narrowing of the pitch, the position of the uniformly dispersed conductive particles 3 can be reliably controlled, and therefore, the conduction between the terminals of the narrowed pitch can be reliably realized. Furthermore, in this embodiment, in order to maintain the connection reliability of the anisotropic conductive film 1, the anisotropic conductive film 1 has a distance between the conductive particles 3 in the X direction slightly larger than that of the conductive particles 3 in the Y direction. The structure of the interval is desirably as large as about half of the diameter of the conductive particle 3, for example.

又，於本實施形態中，於異向性導電膜1之製造過程中，於將第1樹脂膜4在除了與導電性粒子3之排列方向正交之方向以外之方向上進行單軸延伸時，如圖7所示，於轉黏有導電性粒子3之第1樹脂層5中形成向X方向延伸之溝槽形狀之凹部15。並且，隨著該凹部15之形成，於第1樹脂層5中形成向X方向延伸之凸部14。 In addition, in the present embodiment, in the manufacturing process of the anisotropic conductive film 1, when the first resin film 4 is uniaxially stretched in a direction other than the direction orthogonal to the arrangement direction of the conductive particles 3 As shown in FIG. 7, a groove-shaped recess 15 extending in the X direction is formed in the first resin layer 5 to which the conductive particles 3 are trans-bonded. In addition, along with the formation of the concave portion 15, a convex portion 14 extending in the X direction is formed in the first resin layer 5.

即，如圖7所示，本實施形態之異向性導電膜1之第1樹脂層5成為X方向上之導電性粒子3間之部位5a比Y方向上之導電性粒子3間之部位5b薄之構成。於該部位5a之位置存在間隙16。並且，於設置於排列在凹部15中之導電性粒子3之間之間隙16中滲入有第2樹脂層8(參照圖8B)。再者，於將第1樹脂膜4進行單軸延伸時，於導電性粒子3串列連接之情形時，於將第1樹脂膜4延伸原始長度之2倍、即延伸200%之情形時，由於大部分之導電性粒子3以大致相同之直徑緊密地排列為直線狀，故而會空出1個導電性粒子3之空間。該1個導電性粒子3之空間之空出部分相當於成為第1樹脂層5中之空隙之間隙16。 That is, as shown in FIG. 7, the first resin layer 5 of the anisotropic conductive film 1 of the present embodiment becomes the part 5a between the conductive particles 3 in the X direction than the part 5b between the conductive particles 3 in the Y direction. Thin composition. There is a gap 16 at the position of the part 5a. In addition, the second resin layer 8 penetrates into the gap 16 between the conductive particles 3 arranged in the recess 15 (see FIG. 8B). Furthermore, when the first resin film 4 is uniaxially stretched, when the conductive particles 3 are connected in series, when the first resin film 4 is stretched twice the original length, that is, when the first resin film 4 is stretched by 200%, Since most of the conductive particles 3 are closely arranged linearly with approximately the same diameter, one space for the conductive particle 3 is vacated. The vacant part of the space of the one conductive particle 3 corresponds to the gap 16 which becomes the void in the first resin layer 5.

如此，於本實施形態中，異向性導電膜1係以如下方式形成：將 於第1樹脂層5中轉黏有導電性粒子3之第1樹脂膜4在除了與導電性粒子3之排列方向正交之方向以外之方向上，以至少比原始長度之150%長之方式進行單軸延伸後，層壓含有第2樹脂層8之第2樹脂膜7。因此，如圖9所示，導電性粒子3於凹部15內以向第1方向(X方向)延伸之方式規則地配置為大致直線狀，並保持於第1樹脂層5與第2樹脂層8之間。其亦可以特定之間隔而配置。因此，於應對窄間距化之異向性導電膜1中，可確實地控制均勻分散之導電性粒子3之位置，而可確實地實現窄間距化之端子彼此之導通。再者，上述所謂「配置為大致直線狀」，係指以使凹部15之寬度方向(Y方向)上之各導電性粒子3之排列之偏差收斂於粒徑之1/3以下之範圍內之狀態進行排列。 Thus, in this embodiment, the anisotropic conductive film 1 is formed as follows: In the first resin layer 5, the first resin film 4 to which the conductive particles 3 are adhered is longer than at least 150% of the original length in directions other than the direction orthogonal to the arrangement direction of the conductive particles 3 After performing uniaxial stretching, the second resin film 7 containing the second resin layer 8 is laminated. Therefore, as shown in FIG. 9, the conductive particles 3 are regularly arranged in a substantially linear shape so as to extend in the first direction (X direction) in the recess 15 and are held in the first resin layer 5 and the second resin layer 8 between. It can also be arranged at specific intervals. Therefore, in the anisotropic conductive film 1 that responds to the narrowing of the pitch, the position of the uniformly dispersed conductive particles 3 can be reliably controlled, and the conduction between the terminals of the narrowed pitch can be reliably realized. In addition, the above-mentioned "arrangement in a substantially linear shape" means that the deviation of the arrangement of the conductive particles 3 in the width direction (Y direction) of the recessed portion 15 is converged within a range of 1/3 or less of the particle diameter. The status is arranged.

[連接結構體] [Connection structure]

其次，針對本發明之第1實施形態之連接結構體之構成，一邊使用圖式一邊進行說明。圖10係表示應用本發明之第1實施形態之異向性導電膜之連接結構體之構成的概略剖面圖。如圖10所示，本發明之第1實施形態之連接結構體50例如係經由上述異向性導電膜1，將IC晶片等電子零件52電性及機械地連接固定於可撓性配線基板或液晶面板等基板54上而成者。電子零件52形成有作為連接端子之凸塊56。另一方面，於基板54之上面，於與凸塊56對向之位置形成有電極58。 Next, the structure of the connection structure of the first embodiment of the present invention will be described while using the drawings. Fig. 10 is a schematic cross-sectional view showing the configuration of the connection structure to which the anisotropic conductive film of the first embodiment of the present invention is applied. As shown in FIG. 10, the connection structure 50 of the first embodiment of the present invention is, for example, via the anisotropic conductive film 1 to electrically and mechanically connect and fix electronic components 52 such as IC chips to a flexible wiring board or It is formed on a substrate 54 such as a liquid crystal panel. The electronic component 52 is formed with bumps 56 as connection terminals. On the other hand, on the upper surface of the substrate 54, an electrode 58 is formed at a position opposite to the bump 56.

並且，於電子零件52之凸塊56與形成於基板54上之電極58之間，及電子零件52與配線基板54之間，介隔有成為接著劑之本實施形態之異向性導電膜1。於凸塊56與電極58之對向之部分，將異向性導電膜1中所含有之導電性粒子3壓碎，而實現電性導通。又，與此同時，藉由構成異向性導電膜1之接著劑成分，亦實現電子零件52與基板54之機械接合。 In addition, between the bump 56 of the electronic component 52 and the electrode 58 formed on the substrate 54, and between the electronic component 52 and the wiring substrate 54, the anisotropic conductive film 1 of the present embodiment that serves as an adhesive is interposed. . At the portion facing the bump 56 and the electrode 58, the conductive particles 3 contained in the anisotropic conductive film 1 are crushed to achieve electrical conduction. At the same time, the electronic component 52 and the substrate 54 are mechanically joined by the adhesive components constituting the anisotropic conductive film 1.

如此，本實施形態之連接結構體50係於使應力緩和之狀態下，藉由獲得高接著強度之異向性導電膜1將形成有電極58之基板54與設置有凸塊56之電子零件52連接而構成。即，於連接結構體50之電子零件52與基板54之連接 時，使用本實施形態之異向導電性膜1。 In this way, the connection structure 50 of the present embodiment is in a state where the stress is relieved. The anisotropic conductive film 1 with high bonding strength is used to combine the substrate 54 with the electrode 58 and the electronic component 52 with the bump 56 Connected to form. That is, the connection between the electronic component 52 of the connection structure 50 and the substrate 54 In this case, the anisotropic conductive film 1 of this embodiment is used.

如上所述，本發明之一實施形態之異向性導電膜1係於第1樹脂層5形成凸部14與凹部15，將於該凹部15中規則地排列有導電性粒子3者利用第2樹脂層8進行層壓，而保持於兩樹脂層5、8中。該規則性亦可以特定之間隔而配置。因此，各導電性粒子3藉由凸部14而確實地變得難以於圖10中之水平方向上移動，而得以分散保持。因此，接合時之導電性粒子3之移動依存於導電性粒子3間之空隙即間隙16，且受其形狀支配之要素較大。 As described above, in the anisotropic conductive film 1 of one embodiment of the present invention, the convex portions 14 and the concave portions 15 are formed on the first resin layer 5, and the second conductive particles 3 are arranged regularly in the concave portion 15. The resin layer 8 is laminated and held in the two resin layers 5 and 8. The regularity can also be configured at specific intervals. Therefore, each conductive particle 3 is surely difficult to move in the horizontal direction in FIG. 10 due to the convex portion 14 and is dispersed and held. Therefore, the movement of the conductive particles 3 at the time of joining depends on the gap 16, which is the gap between the conductive particles 3, and the factors governed by the shape are relatively large.

因此，可確保連接結構體50之基板54與電子零件52之良好之連接性，而可長時間提高電性及機械連接之可靠性。即，藉由使用本實施形態之異向性導電膜1，可製造導通可靠性高之連接結構體50。再者，作為本實施形態之連接結構體50之具體例，可列舉半導體裝置、液晶顯示裝置、LED照明裝置等。 Therefore, good connectivity between the substrate 54 of the connecting structure 50 and the electronic components 52 can be ensured, and the reliability of electrical and mechanical connections can be improved for a long time. That is, by using the anisotropic conductive film 1 of this embodiment, the connection structure 50 with high conduction reliability can be manufactured. Furthermore, as specific examples of the connection structure 50 of the present embodiment, a semiconductor device, a liquid crystal display device, an LED lighting device, etc. can be cited.

(第2實施形態) (Second Embodiment)

於本發明之第2實施形態之異向性導電膜之製造方法中，於將導電性粒子埋入並排列於片材之溝槽時，為了不損傷導電性粒子地提高導電性粒子向樹脂層之轉黏效率，使用成為溝槽之深度形成為小於導電性粒子之直徑的模具之片材、及於與導電性粒子之接觸面上以特定間隔設置有可誘導至該溝槽之數個突起部之導引體。 In the manufacturing method of the anisotropic conductive film of the second embodiment of the present invention, when the conductive particles are embedded and arranged in the grooves of the sheet, in order to increase the conductive particles to the resin layer without damaging the conductive particles The transfer efficiency is achieved by using a sheet of a mold whose groove depth is formed to be smaller than the diameter of the conductive particles, and a number of protrusions that can be induced to the groove are arranged on the contact surface with the conductive particles at specific intervals Department of the guide body.

針對本發明之第2實施形態之異向性導電膜之製造方法，一邊使用圖式一邊進行說明。圖11A、B係本發明之第2實施形態之異向性導電膜之製造方法中所使用之導引體的概略構成圖，圖12係表示本發明之第2實施形態之異向性導電膜之製造方法中所使用之片材之概略構成的剖面圖，圖13係用以說明本發明之第2實施形態之異向性導電膜之製造方法中於片材之溝槽埋入並排列導電性粒子之動作的剖面圖。再者，圖11A係示意性地表示本發明之第2實施形態中所使用之導引體之特徵部即與導電性粒子之接觸面側者，圖11B係示意性地表 示本發明之第2實施形態中所使用之導引體之剖面者，圖13係以剖面圖表示於片材之溝槽埋入並排列導電性粒子之動作狀態者。 The manufacturing method of the anisotropic conductive film according to the second embodiment of the present invention will be described while using the drawings. 11A, B are schematic diagrams of the guide used in the manufacturing method of the anisotropic conductive film in the second embodiment of the present invention, and FIG. 12 shows the anisotropic conductive film in the second embodiment of the present invention A cross-sectional view of the schematic configuration of the sheet used in the manufacturing method. Figure 13 is used to illustrate the second embodiment of the present invention in the manufacturing method of the anisotropic conductive film. The grooves of the sheet are buried and arranged to conduct electricity A cross-sectional view of the movement of sex particles. Furthermore, FIG. 11A schematically shows the characteristic part of the guide used in the second embodiment of the present invention, that is, on the side of the contact surface with the conductive particles, and FIG. 11B schematically shows the surface FIG. 13 is a cross-sectional view showing a cross-section of the guide used in the second embodiment of the present invention, and FIG. 13 is a cross-sectional view showing an operating state in which conductive particles are embedded and arranged in the groove of the sheet.

如圖11A所示，本實施形態中所使用之導引體112於與導電性粒子103之接觸面112a上，於導引體112之寬度方向即圖11A所示之E方向上以特定間隔設置有可誘導至片材102之溝槽110(參照圖12)中之數個突起部112b。又，如圖11A所示，該等突起部112b以向導引體112之接觸面112a之長度方向即圖11A所示之F方向延伸之方式以特定間隔而設置。再者，導引體112之製法可與片材102大致相同，又，導引體112之材料亦可使用與片材102相同者。 As shown in FIG. 11A, the guide body 112 used in this embodiment is arranged on the contact surface 112a with the conductive particle 103 at specific intervals in the width direction of the guide body 112, ie in the E direction shown in FIG. 11A There are several protrusions 112b that can be induced into the groove 110 of the sheet 102 (refer to FIG. 12). In addition, as shown in FIG. 11A, the protrusions 112b are provided at specific intervals such that the length direction of the contact surface 112a of the guide body 112 extends in the F direction shown in FIG. 11A. Furthermore, the manufacturing method of the guide body 112 can be substantially the same as that of the sheet material 102, and the material of the guide body 112 can also be the same as that of the sheet material 102.

於將導電性粒子103填充於片材102之溝槽110中時，為了使流動之導電性粒子103容易分開，如圖11B所示，突起部112b之形狀成為自設置之接觸面側所具有之基端部112b1向前端部112b2前端逐漸變細之大致三角錐形狀。藉由將突起部112b設為自基端部112b1向前端部112b2前端逐漸變細之形狀，於將導電性粒子103填充於片材102之溝槽110中時，若使導引體112於長度方向(F方向)上移動，則於接觸面112a流動之導電性粒子103會被突起部112b之斜面112b3分開。因此，藉由使用設置有突起部112b之導引體112，變得容易將導電性粒子103誘導至溝槽110中。再者，突起部112b之形狀只要為自基端部112b1向前端部112b2前端逐漸變細之形狀，則並不限定於大致三角錐形狀，例如亦可應用圓錐形狀或圓錐台形狀等其他形狀。又，突起部112b之形狀並不限定於僅以直線形成之形狀，亦可於部分或全部含有曲線。 When the conductive particles 103 are filled in the grooves 110 of the sheet 102, in order to facilitate the separation of the flowing conductive particles 103, as shown in FIG. The base end portion 112b1 has a substantially triangular pyramid shape that tapers toward the tip of the tip end portion 112b2. By setting the protrusion 112b into a shape that tapers from the base end 112b1 to the tip of the tip 112b2, when the conductive particles 103 are filled in the groove 110 of the sheet 102, if the guide body 112 is in the length When moving in the direction (F direction), the conductive particles 103 flowing on the contact surface 112a are separated by the inclined surface 112b3 of the protrusion 112b. Therefore, by using the guide 112 provided with the protrusion 112b, it becomes easy to induce the conductive particles 103 into the groove 110. In addition, the shape of the protrusion 112b is not limited to a substantially triangular pyramid shape as long as it tapers from the base end 112b1 to the tip end of the distal end 112b2. For example, other shapes such as a conical shape or a truncated cone shape may be applied. In addition, the shape of the protrusion 112b is not limited to a shape formed only with a straight line, and may include a curve in part or all.

又，如圖11B所示，於導引體112之接觸面112a之邊緣部側，設置有高度與突起部112b大致相同或略低之側壁部112c。如此，藉由在導引體112之接觸面112a之邊緣部側設置側壁部112c，於使用導引體112填充導電性粒子103時，可防止導電性粒子103向導引體112之接觸面112a之外側漏出，因此可提高導電性粒子103之填充效率。 In addition, as shown in FIG. 11B, on the edge portion side of the contact surface 112a of the guide body 112, there is provided a side wall portion 112c whose height is approximately the same as or slightly lower than that of the protrusion portion 112b. In this way, by providing the side wall portion 112c on the edge side of the contact surface 112a of the guide body 112, when the guide body 112 is used to fill the conductive particles 103, the conductive particles 103 can be prevented from the contact surface 112a of the guide body 112 Since it leaks from the outer side, the filling efficiency of the conductive particle 103 can be improved.

進而，如上所述，突起部112b係於導引體112之寬度方向(E方向)上以特定間隔而設置，該突起部112b之間成為間隙部112d。導引體112之寬度方向上之突起部112b之間隔如圖11B所示，突起部112b之基端部112b1之間隔即間隙部112d之基端部112d1之寬度W1與片材102之溝槽110之寬度W(參照圖12)大致相同。由此，導引體112成為突起部112b之前端部112b2之間隔即間隙部112d之前端部112d2之寬度W2大於片材102之溝槽110之寬度W之構成。 Furthermore, as described above, the protrusions 112b are provided at specific intervals in the width direction (E direction) of the guide body 112, and the gaps between the protrusions 112b become the gap portions 112d. The distance between the protrusion 112b in the width direction of the guide body 112 is shown in FIG. 11B. The distance between the base end 112b1 of the protrusion 112b is the width W1 of the base end 112d1 of the gap 112d and the groove 110 of the sheet 102 The width W (refer to Figure 12) is approximately the same. Thus, the guide body 112 has a structure in which the distance between the front end 112b2 of the protrusion 112b, that is, the width W2 of the front end 112d2 of the gap 112d, is larger than the width W of the groove 110 of the sheet 102.

藉由將導引體112設為如上所述之構成，於使用導引體112在片材102之溝槽110中填充導電性粒子103時，導入至突起部112b之間之導電性粒子103被導引體112之突起部112b之斜面部112c分開。並且，將已分開之導電性粒子103誘導至突起部112b之間所具有之間隙部112d中之後，使之於導引體112之接觸面112a之長度方向(F方向)上流動，而誘導至片材102之溝槽110中。因此，於將導電性粒子103埋入並排列於片材102之溝槽110中時，變得容易將導電性粒子103誘導至片材102之溝槽110中，因此可提高對片材102之溝槽110之填充效率。 By configuring the guide 112 as described above, when the guide 112 is used to fill the grooves 110 of the sheet 102 with the conductive particles 103, the conductive particles 103 introduced between the protrusions 112b are The inclined surface 112c of the protruding portion 112b of the guide body 112 is separated. In addition, after the separated conductive particles 103 are induced into the gap portion 112d between the protrusions 112b, they are caused to flow in the longitudinal direction (the F direction) of the contact surface 112a of the guide body 112, and are induced to In the groove 110 of the sheet 102. Therefore, when the conductive particles 103 are embedded and arranged in the grooves 110 of the sheet 102, it becomes easy to induce the conductive particles 103 into the grooves 110 of the sheet 102. Therefore, the resistance to the sheet 102 can be improved. Filling efficiency of trench 110.

又，於本實施形態中，如圖12所示，使用溝槽110之深度D小於導電性粒子103之直徑而形成之片材102。具體而言，於片材102，形成有導電性粒子103之直徑之1/3~1/2左右之深度D的溝槽110。又，溝槽110之寬度W具有與導電性粒子103之直徑大致相同至略大之寬度。如此，藉由使用溝槽110之深度D形成為小於導電性粒子103之直徑、且溝槽110之寬度W具有與導電性粒子103之直徑大致相同至略大之寬度W的片材102，於使導電性粒子103轉黏於第1樹脂膜104中所含有之樹脂層105(參照圖14)時，對樹脂層105之接觸面積增加，因此可提高轉黏效率。又，藉由將片材102之溝槽110設為較淺之構成，於使導電性粒子103轉黏於樹脂層105時，不會對導電性粒子103施加多餘之應力，因此變得不易於損傷導電性粒子103。 Furthermore, in this embodiment, as shown in FIG. 12, a sheet 102 formed by a groove 110 having a depth D smaller than a diameter of the conductive particles 103 is used. Specifically, in the sheet 102, a groove 110 having a depth D of about 1/3 to 1/2 of the diameter of the conductive particle 103 is formed. In addition, the width W of the trench 110 has a width that is approximately the same as or slightly larger than the diameter of the conductive particle 103. In this way, by using the sheet 102 in which the depth D of the groove 110 is formed to be smaller than the diameter of the conductive particles 103, and the width W of the groove 110 is approximately the same as the diameter of the conductive particles 103 to a slightly larger width W, When the conductive particles 103 are trans-bonded to the resin layer 105 (see FIG. 14) contained in the first resin film 104, the contact area with the resin layer 105 is increased, and therefore the trans-bonding efficiency can be improved. In addition, by making the grooves 110 of the sheet 102 relatively shallow, when the conductive particles 103 are adhered to the resin layer 105, excessive stress is not applied to the conductive particles 103, so it becomes difficult The conductive particles 103 are damaged.

如此，於本實施形態中，於將導電性粒子103埋入並排列於片材 102之溝槽110中時，使用溝槽110之深度D形成為小於導電性粒子之直徑的片材102，及於與導電性粒子103之接觸面112a上以特定間隔設置有可誘導至片材102之溝槽110中之數個突起部112b的導引體112。具體而言，於將導電性粒子103埋入並排列於片材102之溝槽110中時，如圖13所示，使導引體112之突起部112b之前端部112b2抵接於片材102之溝槽110之間所具有之間隙部102a。並且，一面使導引體112於片材102之長度方向(圖2所示之A方向)上移動，一面使導電性粒子103填充於溝槽110中。 In this way, in this embodiment, the conductive particles 103 are embedded and arranged in the sheet In the groove 110 of 102, a sheet 102 whose depth D of the groove 110 is formed smaller than the diameter of the conductive particle is used, and the contact surface 112a with the conductive particle 103 is provided with a sheet that can be induced to the conductive particle 103 at a specific interval. The guide body 112 of the several protrusions 112b in the groove 110 of 102. Specifically, when the conductive particles 103 are embedded and arranged in the groove 110 of the sheet 102, as shown in FIG. 13, the front end 112b2 of the protrusion 112b of the guide body 112 is brought into contact with the sheet 102 There is a gap 102a between the grooves 110. In addition, while the guide 112 is moved in the longitudinal direction of the sheet 102 (direction A shown in FIG. 2 ), the groove 110 is filled with conductive particles 103.

即，於本實施形態中，使用於接觸面112a形成有突起部112b之導引體112，一邊調整溝槽110中之導電性粒子103之排列，一邊使導電性粒子103填充於片材102之溝槽110中。此時，填充至片材102之溝槽110中之多餘之導電性粒子103會藉由導引體112之突起部112b而被去除，因此即便使用溝槽110較淺之片材102，亦可將必要量之導電性粒子103排列於溝槽110中。 That is, in this embodiment, the guide 112 with the protrusion 112b formed on the contact surface 112a is used to adjust the arrangement of the conductive particles 103 in the groove 110 while filling the conductive particles 103 in the sheet 102. In the trench 110. At this time, the excess conductive particles 103 filled in the grooves 110 of the sheet 102 are removed by the protrusions 112b of the guide body 112. Therefore, even if the sheet 102 with shallow grooves 110 is used, it is acceptable. A necessary amount of conductive particles 103 are arranged in the trench 110.

又，於本實施形態中，藉由使用深度D小於導電性粒子103之直徑之溝槽110之片材102，及於接觸面112a具有突起部112b之導引體112，可不損傷導電性粒子103地提高導電性粒子103向樹脂層105之轉黏效率。因此，可提高異向性導電膜101之生產效率，並且實現異向性導電膜101之高品質化。 In addition, in this embodiment, by using the sheet 102 of the groove 110 whose depth D is smaller than the diameter of the conductive particle 103, and the guide 112 having the protrusion 112b on the contact surface 112a, the conductive particle 103 is not damaged. Therefore, the transfer efficiency of the conductive particles 103 to the resin layer 105 is improved. Therefore, the production efficiency of the anisotropic conductive film 101 can be improved, and the quality of the anisotropic conductive film 101 can be improved.

再者，於本實施形態中，於使導電性粒子103轉黏於第1樹脂膜104之樹脂層105時，由於使用較淺之溝槽110之片材102，故而導電性粒子103於在溝槽110內未牢固固定之狀態下轉黏於樹脂層105。因此，如圖14所示，粒子列103a於樹脂層105中，以向成為異向性導電膜101之長度方向之第1方向(圖14所示之A方向)延伸之方式，導電性粒子103於形成於樹脂層105中之凹部115之寬度方向(B方向)上相互錯開而配置。具體而言，如圖14所示，以使各導電性粒子103之排列之偏差收斂於粒徑之1.5倍之範圍內的方式於該寬度方向上無規地排列。 Furthermore, in this embodiment, when the conductive particles 103 are trans-bonded to the resin layer 105 of the first resin film 104, since the sheet 102 of the shallow groove 110 is used, the conductive particles 103 are in the grooves. The groove 110 is not firmly fixed to the resin layer 105 without being firmly fixed. Therefore, as shown in FIG. 14, the particle row 103a in the resin layer 105 extends in the first direction (direction A shown in FIG. 14) that becomes the longitudinal direction of the anisotropic conductive film 101, and the conductive particles 103 The recesses 115 formed in the resin layer 105 are arranged to be shifted from each other in the width direction (B direction). Specifically, as shown in FIG. 14, the conductive particles 103 are randomly arranged in the width direction so that the deviation of the arrangement of the conductive particles 103 is within the range of 1.5 times the particle diameter.

(第3實施形態) (Third Embodiment)

於本發明之第3實施形態之異向性導電膜之製造方法中，於將導電性粒子埋入並排列於片材之溝槽時，為了提高對片材之溝槽之填充效率，而使用將溝槽設為電極間之間隙之片材及具有導電性之刮板。 In the manufacturing method of the anisotropic conductive film of the third embodiment of the present invention, when the conductive particles are embedded and arranged in the grooves of the sheet, it is used in order to improve the filling efficiency of the grooves of the sheet. Set the groove as a sheet of the gap between the electrodes and a conductive squeegee.

針對本發明之第3實施形態之異向性導電膜之製造方法，一邊使用圖式一邊進行說明。圖15A至C係表示本發明之第3實施形態之異向性導電膜之製造方法中所應用之導電性粒子之填充步驟的剖面圖，圖16係表示本發明之第3實施形態之異向性導電膜之製造方法中之填充步驟結束後之導電性粒子向片材之排列狀態的俯視圖。 The manufacturing method of the anisotropic conductive film of the third embodiment of the present invention will be described while using the drawings. 15A to C are cross-sectional views showing the filling steps of conductive particles used in the manufacturing method of the anisotropic conductive film of the third embodiment of the present invention, and FIG. 16 shows the different orientation of the third embodiment of the present invention The top view of the arrangement state of the conductive particles in the sheet after the filling step in the manufacturing method of the conductive film is completed.

本實施形態之特徵在於：為了提高對片材202之溝槽210之填充效率，將以向片材202之長度方向(圖16所示之A方向)延伸之方式以特定間隔設置於片材202上的電極220之間隙作為導電性粒子203之填充對象之溝槽210，且使各電極220產生磁力。於由基板構成之片材202，如圖15所示，於片材202之寬度方向(圖16所示之B方向)上以特定之間隔設置有數個向片材202之長度方向(A方向)延伸之電極220。 The feature of this embodiment is that in order to improve the efficiency of filling the grooves 210 of the sheet 202, the sheet 202 is arranged at specific intervals in a manner extending in the longitudinal direction of the sheet 202 (direction A shown in FIG. 16). The gap between the upper electrode 220 serves as the trench 210 to be filled with the conductive particles 203, and each electrode 220 generates a magnetic force. In the sheet 202 composed of a substrate, as shown in FIG. 15, a plurality of pieces facing the length direction (A direction) of the sheet 202 are arranged at specific intervals in the width direction of the sheet 202 (the B direction shown in FIG. 16) Extension of the electrode 220.

並且，藉由對各電極220通電等而產生磁力。藉此，可將導電性粒子203吸引至電極220，而於電極間所具有之溝槽210中將導電性粒子203設置為大致直線狀。又，於本實施形態中，藉由調整電極220產生之磁力強度，可適當控制導電性粒子203之轉印。又，除了利用電極220適當調整磁力以外，例如亦可為如下方案：藉由以一定磁力於電極220之排列間設置導電性粒子203後，於轉印時對轉印體之相反之面施加更強之磁力，而適當調整作用於導電性粒子203之磁力。 In addition, magnetic force is generated by energizing each electrode 220 or the like. Thereby, the conductive particles 203 can be attracted to the electrodes 220, and the conductive particles 203 can be arranged in a substantially linear shape in the groove 210 provided between the electrodes. Furthermore, in this embodiment, by adjusting the intensity of the magnetic force generated by the electrode 220, the transfer of the conductive particles 203 can be appropriately controlled. In addition to using the electrode 220 to appropriately adjust the magnetic force, for example, the following solution is also possible: after the conductive particles 203 are arranged between the electrodes 220 with a certain magnetic force, the opposite side of the transfer body is applied during transfer. Strong magnetic force, and appropriately adjust the magnetic force acting on the conductive particles 203.

又，本實施形態中設置有用以將導電性粒子203填充於溝槽210中之刮板222。刮板222藉由一邊抵接於各電極220，一邊於電極220之長度方向 (圖16所示之A方向)上移動，而去除附著於電極220上之多餘之導電性粒子203，並將導電性粒子203填充於各溝槽210內。又，本實施形態之特徵在於：為了維持各電極220所產生之磁力，而使用由具有導電性之金屬等材質形成之刮板222。再者，刮板222只要為賦予帶電性之金屬等材質，則其材質並無特別限定。 In addition, in this embodiment, a scraper 222 for filling the groove 210 with conductive particles 203 is provided. The squeegee 222 abuts on each electrode 220 on one side, and on the other side in the length direction of the electrode 220 (A direction shown in FIG. 16) moves upward to remove excess conductive particles 203 adhering to the electrode 220, and fill the conductive particles 203 in each trench 210. In addition, the present embodiment is characterized in that in order to maintain the magnetic force generated by each electrode 220, a scraper 222 formed of a material such as a conductive metal is used. In addition, the material of the scraper 222 is not particularly limited as long as it is a material such as a metal that imparts charging properties.

如此，於本實施形態中，藉由在片材203上設置電極220，於將導電性粒子203填充於片材202之溝槽210中時，首先於電極220之間在相對於該電極220之長度方向(圖16所示之A方向)及寬度方向(B方向)成為鉛垂之方向之C方向(參照圖15A)上產生磁力。 In this way, in this embodiment, by providing the electrode 220 on the sheet 203, when the conductive particles 203 are filled in the grooves 210 of the sheet 202, the electrode 220 is first placed between the electrodes 220. The longitudinal direction (direction A shown in FIG. 16) and the width direction (direction B) are perpendicular to the direction C (refer to FIG. 15A), and magnetic force is generated.

於本實施形態中，由於使各電極220產生磁力，故而不會對導電性粒子203施加多餘之應力，而使導電性粒子203確實地附著於電極220。並且，如圖15A所示，該等附著於電極220之導電性粒子203變得填充於電極220間所具有之溝槽210中。又，於本實施形態中，藉由使電極220產生磁力，而使導電性粒子203附著於電極220，因此如圖15A所示，填充於溝槽210中之導電性粒子203變得附著於構成溝槽210之側壁之電極220之側壁220a、220b之任一側。因此，將第1樹脂膜204進行延伸後，其亦靠近形成其寬度之任一側。 In this embodiment, since each electrode 220 generates a magnetic force, excessive stress is not applied to the conductive particles 203, and the conductive particles 203 are reliably attached to the electrodes 220. In addition, as shown in FIG. 15A, the conductive particles 203 attached to the electrodes 220 become filled in the grooves 210 provided between the electrodes 220. Moreover, in this embodiment, the electrode 220 generates a magnetic force, so that the conductive particles 203 are attached to the electrode 220. Therefore, as shown in FIG. 15A, the conductive particles 203 filled in the trench 210 become attached to the structure. Either side of the sidewalls 220a, 220b of the electrode 220 of the sidewall of the trench 210. Therefore, after the first resin film 204 is stretched, it is also close to either side forming its width.

使導電性粒子203附著於各電極220之後，其次如圖15B所示，將存在於電極220上之多餘之導電性粒子203利用刮板222去除。於本實施形態中，於利用刮板222去除多餘之導電性粒子203時，有時會對導電性粒子203之表面之鍍敷等造成輕微損傷，但並非為對完成後之異向性導電膜201之導通可靠性等性能產生影響之程度的損傷。若利用刮板222去除多餘之導電性粒子203，並調整所需之導電性粒子203之排列，則如圖15C所示，完成導電性粒子203向片材202之溝槽210之填充。 After the conductive particles 203 are attached to the electrodes 220, as shown in FIG. 15B, the excess conductive particles 203 present on the electrodes 220 are removed with a scraper 222. In this embodiment, when the squeegee 222 is used to remove the excess conductive particles 203, the plating on the surface of the conductive particles 203 may be slightly damaged, but it is not for the anisotropic conductive film after completion. 201's conduction reliability and other performance affect the degree of damage. If the squeegee 222 removes the excess conductive particles 203 and adjusts the desired arrangement of the conductive particles 203, as shown in FIG. 15C, the filling of the conductive particles 203 into the grooves 210 of the sheet 202 is completed.

如此，於本實施形態中，藉由使用將電極220間之間隙設為溝槽210之片材202，於藉由通電等使電極220產生磁力後，不施加多餘之應力而將導 電性粒子203利用所產生之磁力吸引至電極220。並且，一邊利用具有導電性之刮板222去除多餘之導電性粒子203，一邊將導電性粒子203填充於溝槽210內。並且，使填充於片材202之溝槽210中之導電性粒子203轉黏於第1樹脂膜204(參照圖17)。因此，於將導電性粒子203轉黏於第1樹脂膜204之前，可將該導電性粒子203效率良好且確實地填充於片材202之溝槽210中。即，藉由在所需之片材202設置電極220後使之產生磁力，可提高對轉黏導電性粒子203時使用之片材202之溝槽210之填充效率。尤其於本實施形態中，效率良好且確實地進行導電性粒子203向片材202之溝槽210之填充，因此與第1及第2實施形態相比，於效率良好地製造長條化之異向性導電膜時亦可應用。 In this way, in this embodiment, by using the sheet 202 in which the gap between the electrodes 220 is set as the groove 210, after the electrode 220 is generated magnetic force by energization or the like, the conductor is not applied with excessive stress. The electrical particles 203 are attracted to the electrode 220 by the generated magnetic force. In addition, the groove 210 is filled with the conductive particles 203 while removing the excess conductive particles 203 by the squeegee 222 having conductivity. Then, the conductive particles 203 filled in the grooves 210 of the sheet 202 are transbonded to the first resin film 204 (see FIG. 17). Therefore, before the conductive particles 203 are transbonded to the first resin film 204, the conductive particles 203 can be efficiently and reliably filled in the grooves 210 of the sheet 202. That is, by providing the electrode 220 on the desired sheet 202 and generating a magnetic force, the filling efficiency of the groove 210 of the sheet 202 used when the conductive particles 203 are transferred can be improved. In particular, in this embodiment, the filling of the conductive particles 203 into the grooves 210 of the sheet 202 is performed efficiently and reliably. Therefore, compared with the first and second embodiments, the difference in lengthening is efficiently manufactured. It can also be applied to a directional conductive film.

又，於本實施形態中，如圖16所示，填充於片材202之溝槽210中之導電性粒子203附著於電極220之側壁220a、220b之任一側，並保持於電極間。因此，若將填充於片材202之溝槽210中之導電性粒子203轉黏於第1樹脂膜204之樹脂層205後，於長度方向(A方向)上進行單軸延伸，則如圖17所示，導電性粒子203分別沿著樹脂層205所形成之凹部215之側緣部215a、215b之任一側配置。即，於本實施形態之異向性導電膜201中，各粒子列203a成為導電性粒子203分別沿著樹脂層205所形成之凹部215之側緣部215a、215b之任一側配置之構成。再者，由於各粒子列203a中之異向性導電膜201之寬度方向(B方向)上之導電性粒子203之偏差受溝槽210之寬度W影響，故而例如於將導電性粒子203之粒徑設為3.0μm，將溝槽寬度設為3.5~4.0μm左右之情形時，其偏差成為粒徑之1/3左右。 Furthermore, in this embodiment, as shown in FIG. 16, the conductive particles 203 filled in the groove 210 of the sheet 202 adhere to either side of the side walls 220a, 220b of the electrode 220, and are held between the electrodes. Therefore, if the conductive particles 203 filled in the groove 210 of the sheet 202 are trans-bonded to the resin layer 205 of the first resin film 204 and then uniaxially stretched in the longitudinal direction (direction A), as shown in FIG. 17 As shown, the conductive particles 203 are arranged along either side of the side edge portions 215a and 215b of the recess 215 formed by the resin layer 205, respectively. That is, in the anisotropic conductive film 201 of this embodiment, each particle row 203a has a configuration in which the conductive particles 203 are respectively arranged along either side of the side edge portions 215a and 215b of the recess 215 formed by the resin layer 205. Furthermore, since the deviation of the conductive particles 203 in the width direction (direction B) of the anisotropic conductive film 201 in each particle row 203a is affected by the width W of the groove 210, for example, the particles of the conductive particles 203 When the diameter is 3.0 μm and the groove width is about 3.5 to 4.0 μm, the deviation becomes about 1/3 of the particle diameter.

於以上之情形中，存在由於導電性粒子203與電極220及刮板222強烈地摩擦，而產生滑動痕之情形。例如於使用鍍敷粒子作為導電性粒子203之情形時，導電性粒子203之表面之一部分會剝離或捲縮。又，於使用金屬粒子作為導電性粒子203之情形時，亦有導電性粒子203之一部分發生變形之情形。此 種滑動痕藉由產生為導電性粒子203之表面積之5%以上，而於黏合劑樹脂205之轉印時或異向性導電膜201之熱加壓時等抑制導電性粒子203之流動。又，產生滑動痕之導電性粒子203只要為整體之50%以內，則對異向性導電膜201之導通性能並無影響，較佳為將該滑動痕之發生率設為全部導電性粒子數之25%以內，更佳為未達15%。 In the above cases, there are cases where the conductive particles 203 rub against the electrode 220 and the squeegee 222 intensively, resulting in sliding marks. For example, when plated particles are used as the conductive particles 203, a part of the surface of the conductive particles 203 may peel off or curl. In addition, when metal particles are used as the conductive particles 203, a part of the conductive particles 203 may be deformed. this Such sliding marks are generated to be more than 5% of the surface area of the conductive particles 203, and the flow of the conductive particles 203 is suppressed during the transfer of the binder resin 205 or the heat and pressure of the anisotropic conductive film 201. In addition, as long as the conductive particles 203 generating sliding traces are within 50% of the total, it will not affect the conduction performance of the anisotropic conductive film 201. It is preferable to set the occurrence rate of the sliding traces as the total number of conductive particles. Within 25%, more preferably less than 15%.

[實施例] [Example]

<本發明之第1至第3實施形態中共用之實施例> <Examples shared in the first to third embodiments of the present invention>

其次，對本發明之實施例進行說明。於本實施例中，準備溝槽10之形狀、尺寸不同之數個片材2，於使導電性粒子3填充、排列於各樣品中後，將導電性粒子3轉印至第1樹脂膜4，於單軸延伸後層壓第2樹脂膜7而製造異向性導電膜1之樣品。 Next, an embodiment of the present invention will be described. In this embodiment, several sheets 2 with different shapes and sizes of grooves 10 are prepared, and after the conductive particles 3 are filled and arranged in each sample, the conductive particles 3 are transferred to the first resin film 4 After the uniaxial stretching, the second resin film 7 was laminated to produce a sample of the anisotropic conductive film 1.

各實施例之片材2係使用厚度50μm之聚丙烯膜(東麗股份有限公司製造：Torayfan 2500H)。於該片材2，對形成有特定之溝槽圖案之模具於180℃下進行30分鐘之熱壓，而形成溝槽10。填充、排列於片材2之溝槽10中之導電性粒子3係對樹脂核心粒子鍍金而成者(積水化學股份有限公司製造：AUL703)。將該導電性粒子3撒在片材2之溝槽10之形成面，利用鐵氟龍(註冊商標)製造之刮板使之均勻地填充、排列於溝槽10中。 The sheet 2 of each example used a polypropylene film (manufactured by Toray Co., Ltd.: Torayfan 2500H) with a thickness of 50 μm. On the sheet 2, a mold formed with a specific groove pattern was hot-pressed at 180° C. for 30 minutes to form the groove 10. The conductive particles 3 filled and arranged in the grooves 10 of the sheet 2 are formed by plating resin core particles with gold (Sekisui Chemical Co., Ltd.: AUL703). The conductive particles 3 are scattered on the forming surface of the groove 10 of the sheet 2 and are uniformly filled and arranged in the groove 10 with a scraper made of Teflon (registered trademark).

又，作為層壓於排列有導電性粒子3之片材2上之第1樹脂膜4、及層壓於第1樹脂膜4上之第2樹脂膜7，係使微膠囊型胺系硬化劑(旭化成E-MATERIALS股份有限公司製造：Novacure HX3941HP)50份、液狀環氧樹脂(三菱化學股份有限公司製造：EP828)14份、苯氧基樹脂(新日鐵化學股份有限公司製造：YP50)35份、矽烷偶合劑(信越化學股份有限公司製造：KBE403)1份混合分散，而形成黏合劑樹脂組成物。並且，對於第1樹脂膜4，將該黏合劑樹脂組成物以厚度成為5μm之方式塗佈於無延伸聚丙烯膜(東麗股份有限公司 製造：Torayfan NO3701J)，對於第2樹脂膜7，將該黏合劑樹脂組成物以厚度成為15μm之方式塗佈於無延伸聚丙烯膜(東麗股份有限公司製造：Torayfan NO3701J)，藉此製作於一面形成有樹脂層5或8之片狀之熱硬化性樹脂膜。又，使用延伸前至轉印為止之第1樹脂膜4之尺寸為20×30cm及A4尺寸左右者，而製作異向性導電膜1之樣品。 In addition, as the first resin film 4 laminated on the sheet 2 on which the conductive particles 3 are arranged, and the second resin film 7 laminated on the first resin film 4, a microcapsule type amine curing agent is used (Manufactured by Asahi Kasei E-MATERIALS Co., Ltd.: Novacure HX3941HP) 50 parts, liquid epoxy resin (manufactured by Mitsubishi Chemical Co., Ltd.: EP828) 14 parts, phenoxy resin (manufactured by Nippon Steel Chemical Co., Ltd.: YP50) 35 parts and 1 part of silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd.: KBE403) were mixed and dispersed to form a binder resin composition. In addition, for the first resin film 4, the adhesive resin composition was applied to a non-stretched polypropylene film (Toray Co., Ltd.) with a thickness of 5 μm. Manufacturing: Torayfan NO3701J). For the second resin film 7, the adhesive resin composition was applied to a non-stretched polypropylene film (manufactured by Toray Co., Ltd.: Torayfan NO3701J) so as to have a thickness of 15 μm. A sheet-shaped thermosetting resin film with a resin layer 5 or 8 formed on one side. In addition, a sample of the anisotropic conductive film 1 was produced by using the size of the first resin film 4 before the stretching to the transfer, which was about 20×30 cm and the size of A4.

並且，藉由在於溝槽10中填充、排列有導電性粒子3之片材2，貼合第1樹脂膜4，而使導電性粒子3轉黏於第1樹脂膜4之樹脂層5。其次，使用縮放方式之延伸機，將第1樹脂膜4於130℃之烘箱中藉由在單軸方向上延伸200%而使之延伸。於延伸後，將第2樹脂膜7貼合於第1樹脂膜4之轉黏有導電性粒子3之樹脂層5側而製作異向性導電膜1之樣品。再者，於各實施例中，將粒子密度為20000個/mm2作為一標準而製作，但該粒子密度係為了比較成為轉印型之片材2之形狀或延伸之方向性等之影響以明確本發明之效果及特徵而設定者。因此，根據使用異向性導電膜1之對象，延伸率之最佳值不同，同樣地粒子密度之最佳值亦不同。 Then, the first resin film 4 is bonded to the first resin film 4 by the sheet 2 in which the conductive particles 3 are filled and arranged in the groove 10, so that the conductive particles 3 are trans-bonded to the resin layer 5 of the first resin film 4. Next, using a zoom-type stretching machine, the first resin film 4 is stretched by 200% in a uniaxial direction in an oven at 130°C. After the stretching, the second resin film 7 is bonded to the resin layer 5 side of the first resin film 4 to which the conductive particles 3 are trans-bonded to produce a sample of the anisotropic conductive film 1. Furthermore, in each embodiment, a particle density of 20,000 particles/mm 2 is used as a standard, but the particle density is used to compare the influence of the shape of the transfer type sheet 2 or the directionality of the extension. It is set to clarify the effects and features of the present invention. Therefore, depending on the object to which the anisotropic conductive film 1 is used, the optimal value of the elongation is different, and the optimal value of the particle density is also different.

並且，對各異向性導電膜1之樣品測定粒子密度、二連結粒子率、及粒子密度之偏差σ。又，使用各異向性導電膜1之樣品，製造將IC晶片之凸塊與配線板之電極端子連接而成之連接結構體樣品，並測定鄰接之電極端子間之短路發生率。 In addition, the particle density, the ratio of two connected particles, and the deviation σ of the particle density were measured for the sample of the anisotropic conductive film 1. In addition, a sample of the anisotropic conductive film 1 was used to manufacture a sample of a connected structure formed by connecting the bumps of the IC chip and the electrode terminals of the wiring board, and the occurrence rate of short circuits between adjacent electrode terminals was measured.

於實施例1中，使用粒徑為3μm之導電性粒子3。又，片材2所形成之溝槽10具有於片材2之長度方向上連續之圖案(參照圖3A)，剖面為矩形狀(參照圖4A)，寬度W為3.0μm，深度D為3.0μm，溝槽之間隔S為5.0μm。 In Example 1, conductive particles 3 having a particle diameter of 3 μm were used. In addition, the groove 10 formed by the sheet 2 has a continuous pattern in the longitudinal direction of the sheet 2 (refer to FIG. 3A), the cross-section is rectangular (refer to FIG. 4A), the width W is 3.0 μm, and the depth D is 3.0 μm , The interval S between the trenches is 5.0 μm.

於實施例2中，將溝槽10之寬度W設為5.9μm，除此以外，設為與實施例1相同之條件。 In Example 2, the width W of the trench 10 was set to 5.9 μm, and other than that, the same conditions as in Example 1 were set.

於實施例3中，將溝槽10之寬度W設為3.5μm，將深度D設為1.5 μm，除此以外，設為與實施例1相同之條件。 In Embodiment 3, the width W of the trench 10 is set to 3.5 μm, and the depth D is set to 1.5 μm, except for this, the same conditions as in Example 1 were used.

於實施例4中，將溝槽10之深度D設為4.5μm，除此以外，設為與實施例3相同之條件。 In Example 4, the depth D of the trench 10 was set to 4.5 μm, and other than that, the same conditions as in Example 3 were set.

於實施例5中，將溝槽10之寬度W設為6.5μm，除此以外，設為與實施例1相同之條件。 In Example 5, the width W of the trench 10 was set to 6.5 μm, and other than that, the same conditions as in Example 1 were set.

於實施例6中，將溝槽10之深度設為6.0μm，除此以外，設為與實施例3相同之條件。 In Example 6, the depth of the trench 10 was set to 6.0 μm, and other than that, the same conditions as in Example 3 were set.

於實施例7中，使用粒徑為4.0μm之導電性粒子3(積水化學股份有限公司製造：AUL704)。又，將片材2所形成之溝槽10之寬度W設為4.0μm，將深度D設為4.0μm，除此以外，設為與實施例1相同之條件。 In Example 7, conductive particles 3 (manufactured by Sekisui Chemical Co., Ltd.: AUL704) having a particle diameter of 4.0 μm were used. In addition, the width W of the groove 10 formed in the sheet 2 was 4.0 μm, and the depth D was 4.0 μm, and the conditions were the same as those in Example 1, except that the width W was 4.0 μm.

於實施例8中，片材2所形成之溝槽10為剖面三角形狀(參照圖4J)，寬度W為3.0μm，深度D為3.0μm，溝槽之間隔S為5.0μm。除此以外，將導電性粒子3或溝槽10之圖案之條件設為與實施例1相同之條件。 In Example 8, the groove 10 formed by the sheet 2 has a triangular cross-sectional shape (refer to FIG. 4J), the width W is 3.0 μm, the depth D is 3.0 μm, and the interval S between the grooves is 5.0 μm. Except for this, the conditions of the pattern of the conductive particles 3 or the grooves 10 were the same as those of Example 1.

於比較例1中，藉由先前之製法製作異向性導電膜。即，於上述實施例之黏合劑樹脂組成物中，分散對樹脂核心粒子鍍金而成之粒徑為3μm之導電性粒子3(積水化學股份有限公司製造：AUL703)5質量份，並將其以厚度成為20μm之方式塗佈於無延伸聚丙烯膜(東麗股份有限公司製造：Torayfan NO3701J)，而製作於一面形成有樹脂層之片狀之熱硬化性樹脂膜。 In Comparative Example 1, the anisotropic conductive film was produced by the previous manufacturing method. That is, in the binder resin composition of the above-mentioned embodiment, 5 parts by mass of conductive particles 3 (Sekisui Chemical Co., Ltd.: AUL703) with a particle diameter of 3 μm, which are gold-plated on the resin core particles, are dispersed and used A non-stretched polypropylene film (manufactured by Toray Co., Ltd.: Torayfan NO3701J) was applied to a thickness of 20 μm to produce a sheet-shaped thermosetting resin film with a resin layer formed on one side.

經由實施例及比較例之異向性導電膜而連接之IC晶片之尺寸為1.4mm×20.0mm，厚度為0.2mm，金凸塊尺寸為17μm×100μm，凸塊高度為12μm，凸塊間隔為11μm。 The size of the IC chip connected through the anisotropic conductive film of the embodiment and the comparative example is 1.4mm×20.0mm, the thickness is 0.2mm, the gold bump size is 17μm×100μm, the bump height is 12μm, and the bump interval is 11μm.

構裝該IC晶片之配線板係形成有與IC晶片之圖案對應之鋁配線圖案的玻璃基板(Corning公司製造：1737F)，尺寸為50mm×30mm，厚度為0.5mm。 The wiring board for constructing the IC chip is a glass substrate (made by Corning Corporation: 1737F) formed with an aluminum wiring pattern corresponding to the pattern of the IC chip, and has a size of 50 mm×30 mm and a thickness of 0.5 mm.

經由實施例及比較例之異向性導電膜連接IC晶片與玻璃基板之條件為170℃、80MPa、10秒。 The conditions for connecting the IC chip and the glass substrate via the anisotropic conductive films of the Examples and Comparative Examples were 170° C., 80 MPa, and 10 seconds.

實施例及比較例之異向性導電膜之粒子密度係使用顯微鏡測定1mm2中之導電性粒子3之數量。二連結粒子率係使用顯微鏡，於200μm×200μm=40000μm2之面積中對連結2個以上之導電性粒子3之數量進行計數，並算出平均之連結數。進而算出50μm×50μm=2500μm2之面積中之粒子密度之偏差σ。 The particle density of the anisotropic conductive films of the Examples and Comparative Examples was measured by using a microscope to measure the number of conductive particles 3 in 1 mm 2. 2. The ratio of connected particles is to count the number of connected conductive particles 3 in an area of 200μm×200μm=40,000μm 2 using a microscope, and calculate the average number of connected particles. Furthermore, the deviation σ of the particle density in an area of 50 μm×50 μm=2500 μm 2 is calculated.

又，測定連接結構體樣品之鄰接之電極端子間之短路發生率。 In addition, the occurrence rate of short circuits between adjacent electrode terminals of the connected structure sample was measured.

將上述實施例1至8、及比較例中之異向性導電膜之各測定結果匯總示於表1。 Table 1 summarizes the measurement results of the anisotropic conductive films in the above-mentioned Examples 1 to 8 and the comparative examples.

Figure 108132428-A0305-02-0029-1
Figure 108132428-A0305-02-0029-1

如表1所示，根據實施例1~8，由於預先將導電性粒子3以特定圖案排列於片材2，故而藉由使轉黏有其等之第1樹脂膜4單軸延伸，可使導電性粒子3確實地分散。因此，於實施例1~8之異向性導電膜中，二連結粒子率成為9%以下。又，於實施例1~8之異向性導電膜中，導電性粒子3之密度未達20000個/mm2，粒子密度之偏差(σ)亦較小，為2以下，使用該等製造之連接結構體樣 品之鄰接之電極端子間之短路發生率為0%。 As shown in Table 1, according to Examples 1 to 8, since the conductive particles 3 are arranged in a specific pattern on the sheet 2 in advance, by uniaxially extending the first resin film 4 to which the conductive particles 3 are adhered, The conductive particles 3 are reliably dispersed. Therefore, in the anisotropic conductive films of Examples 1 to 8, the ratio of two connected particles was 9% or less. In addition, in the anisotropic conductive films of Examples 1 to 8, the density of the conductive particles 3 was less than 20,000/mm 2 , and the deviation (σ) of the particle density was also small, being 2 or less. The occurrence rate of short circuit between adjacent electrode terminals of the connected structure sample was 0%.

尤其於實施例1~4中，由於將片材2之溝槽10之寬度W設為導電性粒子3之粒徑之1倍~未達2倍，且將溝槽10之深度D設為導電性粒子3之粒徑之0.5~1.5倍，故而粒子密度亦較低，二連結粒子率亦成為5%以下。 Especially in Examples 1 to 4, since the width W of the groove 10 of the sheet 2 is set to be 1 to less than twice the particle diameter of the conductive particles 3, and the depth D of the groove 10 is set to be conductive The particle size of the sexual particles 3 is 0.5 to 1.5 times, so the particle density is also low, and the ratio of two connected particles is less than 5%.

另一方面，於使用先前之異向性導電膜之比較例1中，粒子密度為20000個/mm2，二連結粒子率亦增加為12%。又，比較例1之異向性導電膜之粒子密度偏差(σ)較高，為10.2，且鄰接之電極端子間之短路發生率成為2%。 On the other hand, in Comparative Example 1 using the previous anisotropic conductive film, the particle density was 20,000 particles/mm 2 , and the ratio of two connected particles also increased to 12%. In addition, the particle density deviation (σ) of the anisotropic conductive film of Comparative Example 1 was as high as 10.2, and the occurrence rate of short circuits between adjacent electrode terminals was 2%.

又，就片材2之溝槽10之寬度W之影響來看，如實施例1所示，若片材2之溝槽10之寬度W相對於導電性粒子3之粒徑為等倍，則未見二連結粒子，但如實施例2及實施例5所示，隨著片材2之溝槽10之寬度W相對於導電性粒子3之粒徑自不足2倍變為超過2倍，二連結粒子率增加。認為該二連結粒子率增加之原因為：若片材2之溝槽10之寬度W變寬，則填充導電性粒子3所施加之應力會分散。由此可知，片材2之溝槽10之寬度W相對於導電性粒子3之粒徑較佳為未達2倍。 In addition, in terms of the influence of the width W of the groove 10 of the sheet 2, as shown in Example 1, if the width W of the groove 10 of the sheet 2 is equal to the particle size of the conductive particles 3, then Two connected particles are not seen, but as shown in Example 2 and Example 5, as the width W of the groove 10 of the sheet 2 with respect to the particle size of the conductive particles 3 changes from less than twice to more than twice, The rate of connected particles increases. It is considered that the reason for the increase in the ratio of the two connected particles is that if the width W of the groove 10 of the sheet 2 becomes wider, the stress applied by the filling of the conductive particles 3 is dispersed. From this, it can be seen that the width W of the groove 10 of the sheet 2 is preferably less than twice the particle size of the conductive particles 3.

進而，就片材2之溝槽10之深度D之影響來看，由實施例3、實施例4、及實施例6可知，隨著片材2之溝槽10之深度D相對於導電性粒子3之粒徑變大為0.5倍、1.5倍、2倍，粒子密度及二連結粒子率亦顯示出增加傾向。尤其是由實施例3、實施例4可知，於片材2之溝槽10之深度D相對於導電性粒子3之粒徑為0.5~1.5倍之情形時，二連結粒子率成為5%以下，因此對於維持異向性導電膜之導通可靠性較佳。 Furthermore, in terms of the influence of the depth D of the groove 10 of the sheet 2, from Example 3, Example 4, and Example 6, it can be seen that as the depth D of the groove 10 of the sheet 2 is relative to the conductive particle The particle size of 3 becomes 0.5 times, 1.5 times, and 2 times larger, and the particle density and the ratio of two connected particles also show a tendency to increase. In particular, it can be seen from Example 3 and Example 4 that when the depth D of the groove 10 in the sheet 2 is 0.5 to 1.5 times the particle size of the conductive particles 3, the ratio of two connected particles becomes 5% or less. Therefore, it is better to maintain the conduction reliability of the anisotropic conductive film.

<本發明之第1實施形態之實施例> <Examples of the first embodiment of the present invention>

其次，對於使將下述實施例11至19中之第1樹脂膜4進行單軸延伸時之延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率，於與上述實施例1至8同樣之條件下進行測定。 再者，於實施例11至13中，對片材2之溝槽10之寬度W之影響進行研究，於實施例14至16中，對片材2之溝槽10之深度D之影響進行研究，於實施例17至19中，對片材2之溝槽10之間隔即粒子列間距離S之影響進行研究。 Next, regarding the particle density when the elongation of the first resin film 4 in the following Examples 11 to 19 is uniaxially stretched to 150%, 200%, 300%, 450%, 700%, 2. The ratio of connected particles, the deviation of particle density, and the incidence of short circuit were measured under the same conditions as in the above-mentioned Examples 1 to 8. Furthermore, in Examples 11 to 13, the influence of the width W of the groove 10 of the sheet 2 was studied, and in Examples 14 to 16, the influence of the depth D of the groove 10 of the sheet 2 was studied. In Examples 17 to 19, the influence of the distance S between the grooves 10 of the sheet 2 that is the distance S between the particle rows was studied.

於實施例11中，與上述實施例1同樣地使用粒徑為3μm之導電性粒子3。又，片材2所形成之溝槽10具有於片材2之長度方向上連續之圖案(參照圖3A)，剖面為矩形狀(參照圖4A)，寬度W為3.0μm，深度D為3.0μm，溝槽之間隔S為5.0μm。 In Example 11, conductive particles 3 having a particle diameter of 3 μm were used in the same manner as in Example 1 described above. In addition, the groove 10 formed by the sheet 2 has a continuous pattern in the longitudinal direction of the sheet 2 (refer to FIG. 3A), the cross-section is rectangular (refer to FIG. 4A), the width W is 3.0 μm, and the depth D is 3.0 μm , The interval S between the trenches is 5.0 μm.

於實施例12中，與上述實施例2同樣地將溝槽10之寬度W設為5.9μm，除此以外，設為與實施例1相同之條件。 In Example 12, the width W of the trench 10 was set to 5.9 μm in the same manner as in Example 2 described above, and the same conditions as in Example 1 were set except for this.

於實施例13中，與上述實施例5同樣地將溝槽10之寬度W設為6.5μm，除此以外，設為與實施例1相同之條件。 In Example 13, the width W of the trench 10 was set to 6.5 μm in the same manner as in Example 5 described above, and the same conditions as in Example 1 were set except for this.

於實施例14中，與上述實施例3同樣地將溝槽10之寬度W設為3.5μm，將深度D設為1.5μm，除此以外，設為與實施例1相同之條件。 In Example 14, as in Example 3 described above, the width W of the trench 10 was set to 3.5 μm and the depth D was set to 1.5 μm, except that the same conditions as in Example 1 were set.

於實施例15中，與上述實施例4同樣地將溝槽10之深度D設為4.5μm，除此以外，設為與實施例3相同之條件。 In Example 15, as in Example 4 described above, the depth D of the trench 10 was set to 4.5 μm, and other than that, the same conditions as in Example 3 were used.

於實施例16中，與上述實施例6同樣地將溝槽10之深度D設為6.0μm，除此以外，設為與實施例3相同之條件。 In Example 16, the depth D of the trench 10 was set to 6.0 μm in the same manner as in Example 6 described above, and the same conditions as in Example 3 were set except for this.

於實施例17中，將粒子列間距離S設為3.0μm，除此以外，設為與實施例1相同之條件。 In Example 17, the distance S between particle rows was set to 3.0 μm, and the same conditions as in Example 1 were used except for this.

於實施例18中，將粒子列間距離S設為6.0μm，除此以外，設為與實施例1相同之條件。 In Example 18, the distance S between the particle rows was set to 6.0 μm, and the same conditions as in Example 1 were used except for this.

於實施例19中，將粒子列間距離S設為10.5μm，除此以外，設為與實施例1相同之條件。 In Example 19, the distance S between particle rows was set to 10.5 μm, and other than that, the same conditions as in Example 1 were used.

關於使將上述實施例11至19中之第1樹脂膜4進行單軸延伸時之 延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率之測定結果，匯總示於表2。 Regarding the uniaxial stretching of the first resin film 4 in the above-mentioned Examples 11 to 19 Table 2 summarizes the measurement results of the particle density, the ratio of two connected particles, the deviation of particle density, and the incidence of short circuit when the elongation becomes 150%, 200%, 300%, 450%, 700%.

Figure 108132428-A0305-02-0032-2
Figure 108132428-A0305-02-0032-2

如表2所示，根據實施例11至19，可確認粒子密度及二連結粒子率與延伸之程度(延伸率)成比例地降低。認為其原因為：由於預先將導電性粒子3以特定圖案排列於片材2，故而藉由使轉黏有該導電性粒子3之第1樹脂膜4單軸延伸，會使導電性粒子3確實地分散。另一方面，根據實施例11至19，可確認粒子密度之偏差(σ)無論延伸率如何均獲得2以下之較小值。 As shown in Table 2, according to Examples 11 to 19, it was confirmed that the particle density and the ratio of two connected particles decreased in proportion to the degree of elongation (elongation). It is considered that the reason is that since the conductive particles 3 are arranged in a specific pattern on the sheet 2 in advance, the first resin film 4 to which the conductive particles 3 are trans-adhered is uniaxially stretched, so that the conductive particles 3 are surely stretched. To disperse. On the other hand, according to Examples 11 to 19, it can be confirmed that the deviation (σ) of the particle density has a small value of 2 or less regardless of the elongation.

又，根據實施例11至19，可確認短路發生率於延伸率為150%時，於任一實施例中均稍有發生，但於延伸率為200%以上之情形時，於任一實施例中均不發生，短路發生率為0%。認為其原因為：於延伸150%時，無法確保充分之導電性粒子間之距離，因此導電性粒子3之接觸機率提高。由此可知，於使轉 黏有導電性粒子3之第1樹脂膜4單軸延伸時，較佳為以至少大於150%之延伸率即長於原始長度之150%之方式延伸。 Furthermore, according to Examples 11 to 19, it can be confirmed that the short-circuit occurrence rate occurs slightly in any embodiment when the elongation is 150%, but when the elongation is more than 200%, in any embodiment None occurred, and the occurrence rate of short circuit was 0%. The reason for this is considered to be that a sufficient distance between the conductive particles cannot be secured at the extension of 150%, and therefore the contact probability of the conductive particles 3 is improved. It can be seen from this that Yuzhan Zhuan When the first resin film 4 to which the conductive particles 3 are adhered is uniaxially stretched, it is preferably stretched with an elongation greater than 150%, that is, longer than 150% of the original length.

進而，根據實施例11至19，可知粒子密度與片材2之溝槽10之模具之形狀無關，與延伸率成比例地降低。由該等結果亦可知，導電性粒子3之粒子間之空隙因延伸而產生，且依存於一方向。 Furthermore, according to Examples 11 to 19, it can be seen that the particle density is not related to the shape of the mold of the groove 10 of the sheet 2 and decreases in proportion to the elongation. From these results, it can also be seen that the voids between the conductive particles 3 are generated due to extension and depend on one direction.

又，就片材2之溝槽10之寬度W之影響來看，如實施例11所示，與片材2之溝槽10之寬度W相對於導電性粒子3之粒徑為等倍之情形相比，如實施例12及實施例13所示，若溝槽10之寬度W變寬，則粒子密度減小，二連結粒子率增加。再者，若溝槽10之寬度W變寬，則導電性粒子3變得容易轉黏於第1樹脂層5，導電性粒子3之轉印率本身變佳，因此關於粒子密度，實施例12與實施例13之相對差異縮小。又，若溝槽10之寬度W變寬，則導電性粒子3之排列之混亂增大，導致導電性粒子3之連結本身增加，因此二連結粒子率增加。 In addition, in terms of the influence of the width W of the groove 10 of the sheet 2, as shown in Example 11, the width W of the groove 10 of the sheet 2 is equal to the size of the conductive particles 3 In comparison, as shown in Example 12 and Example 13, if the width W of the trench 10 becomes wider, the particle density decreases and the ratio of two connected particles increases. Furthermore, if the width W of the groove 10 is widened, the conductive particles 3 will easily be transadhered to the first resin layer 5, and the transfer rate of the conductive particles 3 itself will be improved. Therefore, regarding the particle density, Example 12 The relative difference with Example 13 is reduced. In addition, if the width W of the trench 10 becomes wider, the disorder of the arrangement of the conductive particles 3 increases, which causes the connection itself of the conductive particles 3 to increase, and therefore the ratio of two connected particles increases.

進而，就片材2之溝槽10之深度D之影響來看，可知如實施例11所示，與片材2之溝槽10之深度D相對於導電性粒子3之粒徑為等倍之情形相比，如實施例12及實施例13所示，若溝槽10之深度D增大，則因第1樹脂層5之樹脂進入溝槽10之內部而使轉印率變佳，因此粒子密度提高。又，可知若溝槽10之深度D增大，則二連結粒子率與粒子密度成比例地增加。進而，就延伸率為150%時之短路發生率來看，由實施例14可知，若片材2之溝槽10較淺則粒子之連結變強，因此短路發生率增大。 Furthermore, in view of the influence of the depth D of the groove 10 of the sheet 2, it can be seen that as shown in Example 11, the depth D of the groove 10 of the sheet 2 is equal to the size of the conductive particles 3 Compared with the situation, as shown in Example 12 and Example 13, if the depth D of the groove 10 increases, the resin of the first resin layer 5 enters the inside of the groove 10 and the transfer rate becomes better. Therefore, the particle Density increases. In addition, it can be seen that if the depth D of the trench 10 increases, the ratio of two connected particles increases in proportion to the particle density. Furthermore, in terms of the occurrence rate of short circuits at an elongation of 150%, it can be seen from Example 14 that if the grooves 10 of the sheet 2 are shallow, the connection of particles becomes stronger, and therefore the occurrence rate of short circuits increases.

又，就片材2之粒子列間距離S之影響來看，可知如實施例17所示，與片材2之粒子列間距離S相對於導電性粒子3之粒徑為等倍之情形相比，如實施例18及實施例19所示，若粒子列間距離S變大，則粒子密度降低。又，由實施例17與實施例18可知，隨著片材2之粒子列間距離S增大，二連結粒子率增加，但由實施例19可知，若片材2之粒子列間距離S變為特定值以上，則於200%以上 之延伸率時變得不會見到連結粒子。 Furthermore, from the perspective of the influence of the distance S between the particle rows of the sheet 2, it can be seen that as shown in Example 17, the distance S between the particle rows of the sheet 2 is equal to the size of the conductive particles 3 In contrast, as shown in Example 18 and Example 19, when the distance S between the particle rows increases, the particle density decreases. Furthermore, it can be seen from Example 17 and Example 18 that as the distance S between the particle rows of the sheet 2 increases, the ratio of the two connected particles increases. However, it can be seen from Example 19 that if the distance S between the particle rows of the sheet 2 changes Above a specific value, then above 200% When the elongation rate is higher, the connecting particles will not be seen.

<本發明之第2實施形態之實施例> <Example of the second embodiment of the present invention>

其次，針對使將下述實施例21至26及比較例21至23中之第1樹脂膜104進行單軸延伸時之延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率，於與上述實施例1至8相同之條件下進行測定。該等實施例21至26及比較例21至23中之第1樹脂膜104係藉由本發明之第2實施形態之異向性導電膜101之製造方法而製造者。又，於該等實施例21至26及比較例21至23中，均使用粒徑為3μm之導電性粒子103。再者，於實施例21至23中，對片材102之溝槽110之深度D之影響進行研究，於實施例24至26中，對導引體112之突起部112b之形狀等之影響進行研究。又，於比較例21至23中，驗證了即便對溝槽110之深度D與導電性粒子103之粒徑相同之片材102使用本發明之其他實施形態之導引體112，亦不會改善導電性粒子103之填充效率。 Next, the elongation of the first resin film 104 in the following Examples 21 to 26 and Comparative Examples 21 to 23 when uniaxially stretched becomes 150%, 200%, 300%, 450%, 700%. The particle density, the rate of two connected particles, the deviation of particle density, and the occurrence rate of short-circuit in the case were measured under the same conditions as in the above-mentioned Examples 1 to 8. The first resin film 104 in these Examples 21 to 26 and Comparative Examples 21 to 23 was manufactured by the manufacturing method of the anisotropic conductive film 101 of the second embodiment of the present invention. In addition, in these Examples 21 to 26 and Comparative Examples 21 to 23, conductive particles 103 having a particle diameter of 3 μm were used. Furthermore, in Examples 21 to 23, the influence of the depth D of the groove 110 of the sheet 102 was studied, and in Examples 24 to 26, the influence of the shape of the protrusion 112b of the guide body 112, etc. was carried out. Research. In addition, in Comparative Examples 21 to 23, it was verified that the guide 112 of another embodiment of the present invention is not improved even if the depth D of the groove 110 is the same as the particle size of the conductive particles 103. The filling efficiency of the conductive particles 103.

於實施例21中，使用突起部112b之高度為2μm，突起間隔為3.5μm，刮板側間隙部112d之基端部之寬度W1為3.5μm，前端部之寬度W2為4.5μm之導引體112，及溝槽110之寬度W為3.5μm，深度D為1.0μm，溝槽之間隔S為3.0μm之片材102。 In Example 21, the height of the protrusion 112b is 2 μm, the protrusion interval is 3.5 μm, the width W1 of the base end of the squeegee side gap portion 112d is 3.5 μm, and the width W2 of the tip end is 4.5 μm. 112, and the sheet 102 with the width W of the groove 110 being 3.5 μm, the depth D being 1.0 μm, and the interval S of the grooves being 3.0 μm.

於實施例22中，將溝槽110之深度D設為1.5μm，除此以外，設為與實施例21相同之條件。 In Example 22, the depth D of the trench 110 was set to 1.5 μm, and other than that, the same conditions as in Example 21 were set.

於實施例23中，將溝槽110之深度D設為2.0μm，除此以外，設為與實施例21相同之條件。 In Example 23, the depth D of the trench 110 was set to 2.0 μm, and other than that, the same conditions as in Example 21 were set.

於實施例24中，使用突起部112b之高度為1.5μm，突起間隔為3.5μm，導引體112之間隙部112d之基端部112d1之寬度W1為3.5μm，前端部112d2之寬度W2為4.5μm之導引體112，及溝槽110之寬度W為3.5μm，深度D為1.5 μm，溝槽之間隔S為3.0μm之片材102。再者，所謂突起部112b之「高度」，係指自突起部112b之基端部112b1至前端部112b2之距離。 In Example 24, the height of the protrusion 112b is 1.5 μm, the protrusion interval is 3.5 μm, the width W1 of the base end 112d1 of the gap portion 112d of the guide body 112 is 3.5 μm, and the width W2 of the front end 112d2 is 4.5. The width W of the guide 112 of μm and the groove 110 is 3.5 μm, and the depth D is 1.5 μm, the interval S of the grooves is a sheet 102 of 3.0 μm. Furthermore, the "height" of the protrusion 112b refers to the distance from the base end 112b1 to the front end 112b2 of the protrusion 112b.

於實施例25中，將突起部112b之高度設為2.0μm，除此以外，設為與實施例24相同之條件。 In Example 25, the height of the protrusion 112b was set to 2.0 μm, and other than that, the same conditions as in Example 24 were used.

於實施例26中，將突起部112b之高度設為2.5μm，除此以外，設為與實施例24相同之條件。 In Example 26, the height of the protrusion 112b was set to 2.5 μm, and other than that, the same conditions as in Example 24 were used.

於比較例21中，使用突起部112b之高度為2.0μm，突起間隔為3.0μm，間隙部112d之基端部112d1之寬度W1為3.0μm，前端部112d2之寬度W2為4.0μm之導引體112，及溝槽110之寬度W為3.0μm，深度D為3.0μm，溝槽110之間隔S為3.0μm之片材102。 In Comparative Example 21, the height of the protrusion 112b is 2.0 μm, the protrusion interval is 3.0 μm, the width W1 of the base end 112d1 of the gap 112d is 3.0 μm, and the width W2 of the tip 112d2 is 4.0 μm. 112, and the sheet 102 in which the width W of the groove 110 is 3.0 μm, the depth D is 3.0 μm, and the interval S between the grooves 110 is 3.0 μm.

於比較例22中，使用突起部112b之高度為2.0μm，突起間隔為3.5μm，間隙部112d之基端部112d1之寬度W1為3.5μm，前端部112d2之寬度W2為4.5μm之導引體112，及溝槽110之寬度W為3.5μm，深度D為3.0μm，溝槽110之間隔S為3.0μm之片材102。 In Comparative Example 22, the height of the protrusion 112b is 2.0 μm, the protrusion interval is 3.5 μm, the width W1 of the base end 112d1 of the gap 112d is 3.5 μm, and the width W2 of the tip 112d2 is 4.5 μm. 112, and the sheet 102 with the width W of the groove 110 being 3.5 μm, the depth D being 3.0 μm, and the interval S of the groove 110 being 3.0 μm.

於比較例23中，使用突起部112b之高度為2.0μm，突起間隔為4.5μm，間隙部112d之基端部112d1之寬度W1為4.5μm，前端部112d2之寬度W2為5.5μm之導引體112，及溝槽110之寬度W為4.5μm，深度D為3.0μm，溝槽110之間隔S為3.0μm之片材102。 In Comparative Example 23, the height of the protrusion 112b is 2.0 μm, the protrusion interval is 4.5 μm, the width W1 of the base end 112d1 of the gap 112d is 4.5 μm, and the width W2 of the tip 112d2 is 5.5 μm. 112, and the sheet 102 where the width W of the groove 110 is 4.5 μm, the depth D is 3.0 μm, and the interval S between the grooves 110 is 3.0 μm.

針對使將上述實施例21至26及比較例21至23中之第1樹脂膜104進行單軸延伸時之延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率之測定結果，匯整示於表3。 For the case where the elongation of the first resin film 104 in the above-mentioned Examples 21 to 26 and Comparative Examples 21 to 23 when subjected to uniaxial stretching is 150%, 200%, 300%, 450%, 700% The measurement results of the particle density, the rate of two connected particles, the deviation of particle density, and the incidence of short circuit are summarized in Table 3.

Figure 108132428-A0305-02-0036-3
Figure 108132428-A0305-02-0036-3

如表3所示，根據實施例21至26，可確認粒子密度及二連結粒子率與延伸之程度(延伸率)成比例地降低。認為其原因為：由於預先將導電性粒子103以特定圖案排列於片材102，故而藉由使轉黏有該導電性粒子103之第1樹脂膜104單軸延伸，會使導電性粒子103確實地分散。另一方面，根據實施例21至26，可確認粒子密度之偏差(σ)無論延伸率如何均獲得2以下之較小值。 As shown in Table 3, according to Examples 21 to 26, it was confirmed that the particle density and the ratio of two connected particles decreased in proportion to the degree of elongation (elongation). It is considered that the reason is that since the conductive particles 103 are arranged in a specific pattern on the sheet 102 in advance, the first resin film 104 to which the conductive particles 103 are trans-adhered is uniaxially stretched, so that the conductive particles 103 are surely stretched. To disperse. On the other hand, according to Examples 21 to 26, it can be confirmed that the deviation (σ) of the particle density has a small value of 2 or less regardless of the elongation.

又，根據實施例21至26，可確認短路發生率於延伸率為150%時，於任一實施例中均稍有發生，但於延伸率為200%以上之情形時，於任一實施例中均不發生，短路發生率為0%。認為其原因為：於延伸150%時，無法確保充分之導電性粒子間之距離，因此導電性粒子103之接觸機率提高。由此可知，於使 轉黏有導電性粒子103之第1樹脂膜104單軸延伸時，較佳為以至少大於150%之延伸率即長於原始長度之150%之方式延伸。 In addition, according to Examples 21 to 26, it can be confirmed that the short-circuit occurrence rate occurs slightly in any embodiment when the elongation rate is 150%, but when the elongation rate is more than 200%, in any embodiment None occurred, and the occurrence rate of short circuit was 0%. The reason for this is considered to be that a sufficient distance between the conductive particles cannot be ensured when the extension is 150%, and therefore the contact probability of the conductive particles 103 is improved. It can be seen that in making When the first resin film 104 to which the conductive particles 103 are trans-bonded is stretched uniaxially, it is preferably stretched with an elongation greater than 150%, that is, longer than 150% of the original length.

進而，根據實施例21至26，可知無論片材102之溝槽110之模具之形狀如何，均與延伸率成比例地降低。由該等結果亦可知，導電性粒子103之粒子間之空隙因延伸而產生，且依存於一方向。 Furthermore, according to Examples 21 to 26, it can be seen that regardless of the shape of the mold of the groove 110 of the sheet 102, it decreases in proportion to the elongation. From these results, it can also be seen that the voids between the conductive particles 103 are generated by extension and depend on one direction.

又，就片材102之溝槽110之深度D之影響來看，如實施例21所示，與片材102之溝槽110之深度D相對於導電性粒子103之粒徑為1/3倍之情形相比，如實施例22及實施例23所示，若溝槽110之深度D增大，則粒子密度減小。認為其原因之一為：若溝槽110之深度D增大，則自導電性粒子103之填充至轉印時之導電性粒子103之移動自由度變小。再者，由於實施例21至23之任一者中溝槽110之深度D均小於導電性粒子103之粒徑，故而即便溝槽110之深度D增大，亦不會對二連結粒子率或粒子密度之偏差σ、及短路發生率之變動造成較大之影響。 Also, in terms of the influence of the depth D of the groove 110 of the sheet 102, as shown in Example 21, the depth D of the groove 110 of the sheet 102 is 1/3 times the particle size of the conductive particles 103 Compared with the situation, as shown in Embodiment 22 and Embodiment 23, if the depth D of the trench 110 increases, the particle density decreases. One of the reasons is considered to be that if the depth D of the trench 110 increases, the degree of freedom of movement of the conductive particles 103 from the filling of the conductive particles 103 to the time of transfer becomes smaller. Furthermore, since the depth D of the groove 110 in any of Examples 21 to 23 is smaller than the particle size of the conductive particles 103, even if the depth D of the groove 110 is increased, it will not affect the ratio of the two connected particles or the particle size. The deviation of density σ and the change in the occurrence rate of short circuit have a greater impact.

進而，就導引體112之突起部112b之形狀等之影響來看，根據實施例24至26，隨著突起部112b之高度增大，粒子密度增加，二連結粒子率減小。認為其原因為：若導引體112之突起部112b之高度增大，則會對導電性粒子103施加多餘之應力。因此，如實施例25所示，較佳為將導引體112之突起部112b之高度設為導電性粒子103之直徑之2/3左右。 Furthermore, in terms of the influence of the shape of the protrusion 112b of the guide body 112, etc., according to Examples 24 to 26, as the height of the protrusion 112b increases, the particle density increases, and the ratio of two connected particles decreases. The reason for this is considered to be that if the height of the protrusion 112b of the guide 112 increases, excessive stress is applied to the conductive particles 103. Therefore, as shown in Example 25, it is preferable to set the height of the protrusion 112b of the guide body 112 to approximately 2/3 of the diameter of the conductive particle 103.

另一方面，於使用利用溝槽110之深度D與導電性粒子103之粒徑相同之片材製造而成之先前之異向性導電膜的比較例21至23中，雖然粒子密度略微減小，但即便進行200%以上之延伸，亦可見二連結粒子或短路之發生。認為其原因為：即便對溝槽110之深度D與導電性粒子103之粒徑相同之片材102使用本發明之第2實施形態之導引體112，亦因溝槽110較深，故而無法藉由導引體112去除多餘之導電性粒子103，因此無法改善對片材102之溝槽110之填充效率。 On the other hand, in Comparative Examples 21 to 23 using the previous anisotropic conductive film manufactured using the sheet with the same depth D of the groove 110 and the particle size of the conductive particles 103, although the particle density is slightly reduced , But even if the extension is more than 200%, the occurrence of two connected particles or short circuits can be seen. It is considered that the reason is that even if the guide 112 of the second embodiment of the present invention is used for the sheet 102 having the same depth D of the groove 110 and the particle size of the conductive particles 103, the groove 110 is relatively deep, so it cannot The guide body 112 removes the excess conductive particles 103, so the filling efficiency of the grooves 110 of the sheet 102 cannot be improved.

<本發明之第3實施形態之實施例> <Example of the third embodiment of the present invention>

其次，針對使將下述實施例31至39中之第1樹脂膜204進行單軸延伸時之延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率，於與上述實施例1至8相同之條件下進行測定。該等實施例31至39中之第1樹脂膜204係於設置有電極220之片材202填充導電性粒子203後進行製造而成者。又，於該等實施例31至39中，均使用粒徑為3μm之導電性粒子203。再者，於實施例31至33中，對構成片材202之溝槽210之電極220之大小即溝槽210之寬度W之影響進行研究，於實施例34至36中，對電極220之寬度即粒子列203a之列間距離S之影響進行研究，於實施例37至39中，對電極220之厚度即溝槽210之深度D之影響進行研究。 Next, regarding the particle density when the elongation of the first resin film 204 in the following Examples 31 to 39 is uniaxially stretched to 150%, 200%, 300%, 450%, 700%, 2. The ratio of connected particles, the deviation of particle density, and the incidence of short circuit were measured under the same conditions as in the above-mentioned Examples 1 to 8. The first resin film 204 in these Examples 31 to 39 is manufactured after the sheet 202 provided with the electrode 220 is filled with conductive particles 203. In addition, in these Examples 31 to 39, conductive particles 203 having a particle diameter of 3 μm were used. Furthermore, in Examples 31 to 33, the influence of the size of the electrode 220 constituting the groove 210 of the sheet 202, that is, the width W of the groove 210, was studied. In Examples 34 to 36, the width of the electrode 220 was studied. That is, the influence of the distance S between the particle rows 203a was studied. In Examples 37 to 39, the influence of the thickness of the electrode 220, that is, the depth D of the trench 210, was studied.

於實施例31中，使用將電極220之剖面設為邊長3.0μm之正方形之情形即溝槽210之寬度W及深度D為3.0μm、溝槽210之間隔S為3.0μm之片材202。 In Embodiment 31, the cross section of the electrode 220 is a square with a side length of 3.0 μm, that is, the sheet 202 in which the width W and the depth D of the trench 210 are 3.0 μm, and the interval S between the trenches 210 is 3.0 μm.

於實施例32中，使用將電極220之剖面設為邊長3.5μm之正方形之情形即溝槽210之寬度W及深度D為3.5μm、溝槽210之間隔S為3.5μm之片材202。 In Embodiment 32, the cross section of the electrode 220 is a square with a side length of 3.5 μm, that is, the sheet 202 in which the width W and the depth D of the trench 210 are 3.5 μm, and the interval S between the trenches 210 is 3.5 μm.

於實施例33中，使用將電極220之剖面設為邊長4.5μm之正方形之情形即溝槽210之寬度W及深度D為4.5μm、溝槽210之間隔S為4.5μm之片材202。 In Embodiment 33, the cross section of the electrode 220 is a square with a side length of 4.5 μm, that is, the sheet 202 in which the width W and the depth D of the trench 210 are 4.5 μm, and the interval S between the trenches 210 is 4.5 μm.

於實施例34中，使用將溝槽210之剖面設為邊長3.5μm之正方形，溝槽210之間隔S為3.0μm之片材202。 In Example 34, a sheet 202 in which the cross section of the trench 210 is a square with a side length of 3.5 μm and the interval S between the trenches 210 is 3.0 μm is used.

於實施例35中，使用將溝槽210之剖面設為邊長3.5μm之正方形，溝槽210之間隔S為3.2μm之片材202。 In Example 35, a sheet 202 in which the cross section of the trench 210 is a square with a side length of 3.5 μm and the interval S between the trenches 210 is 3.2 μm is used.

於實施例36中，使用將溝槽210之剖面設為邊長3.5μm之正方 形，溝槽210之間隔S為4.5μm之片材202。 In Example 36, a square with the cross section of the trench 210 set to a side length of 3.5 μm was used It is a sheet 202 whose grooves 210 have an interval S of 4.5 μm.

於實施例37中，使用溝槽210之寬度W為3.5μm，深度D為3.0μm，溝槽210之間隔S為3.5μm之片材202。 In Example 37, a sheet 202 with a groove 210 having a width W of 3.5 μm, a depth D of 3.0 μm, and an interval S of the grooves 210 of 3.5 μm was used.

於實施例38中，使用溝槽210之寬度W為3.5μm，深度D為3.2μm，溝槽210之間隔S為3.5μm之片材202。 In Embodiment 38, a sheet 202 with a width W of the trench 210 of 3.5 μm, a depth D of 3.2 μm, and an interval S of the trenches 210 of 3.5 μm is used.

於實施例39中，使用溝槽210之寬度W為3.5μm，深度D為4.5μm，溝槽210之間隔S為3.5μm之片材202。 In Example 39, a sheet 202 with a groove 210 having a width W of 3.5 μm, a depth D of 4.5 μm, and an interval S of the grooves 210 of 3.5 μm is used.

針對使將上述實施例31至39中之第1樹脂膜204進行單軸延伸時之延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率之測定結果，匯整示於表4。 Regarding the particle density when the elongation rate of the first resin film 204 in the above Examples 31 to 39 is uniaxially stretched to 150%, 200%, 300%, 450%, 700%, and the second connected particles Table 4 shows the measurement results of the rate, the deviation of particle density, and the incidence of short circuit.

Figure 108132428-A0305-02-0039-4
Figure 108132428-A0305-02-0039-4

如表4所示，根據實施例31至39，可確認粒子密度及二連結粒子 率與延伸之程度(延伸率)成比例地降低。認為其原因為：由於預先將導電性粒子203以特定圖案排列於片材202，故而藉由使轉黏有該導電性粒子203之第1樹脂膜204單軸延伸，會使導電性粒子203確實地分散。又，於實施例31至39中，藉由於向片材202之溝槽210填充導電性粒子203時進行利用磁力之填充，不會對導電性粒子203施加多餘之應力，認為其亦為二連結粒子之發生減少之原因。另一方面，根據實施例31至39，可確認粒子密度之偏差(σ)無論延伸率如何均獲得2以下之較小值。 As shown in Table 4, according to Examples 31 to 39, the particle density and two connected particles can be confirmed The rate decreases in proportion to the degree of extension (elongation rate). It is considered that the reason is that since the conductive particles 203 are arranged in a specific pattern on the sheet 202 in advance, by uniaxially extending the first resin film 204 to which the conductive particles 203 are trans-bonded, the conductive particles 203 can be surely stretched. To disperse. In addition, in Examples 31 to 39, since the filling by magnetic force is performed when filling the groove 210 of the sheet 202 with the conductive particles 203, no excessive stress is applied to the conductive particles 203, and it is considered that it is also a two-connection. The reason for the decrease in the occurrence of particles. On the other hand, according to Examples 31 to 39, it can be confirmed that the deviation (σ) of the particle density has a small value of 2 or less regardless of the elongation.

又，根據實施例31至39，可確認短路發生率於延伸率為150%時，於任一實施例中均稍有發生，但於延伸率為200%以上時，於任一實施例中均不發生，短路發生率為0%。認為其原因為：於延伸150%時，無法確保充分之導電性粒子間之距離，因此導電性粒子203之接觸機率提高。由此可知，於使轉黏有導電性粒子203之第1樹脂膜204單軸延伸時，較佳為以至少大於150%之延伸率即長於原始長度之150%之方式延伸。 In addition, according to Examples 31 to 39, it can be confirmed that the occurrence of short circuit occurs slightly in any of the examples when the elongation is 150%, but in any of the examples when the elongation is 200% or more. Does not occur, and the occurrence rate of short circuit is 0%. It is considered that the reason is that when the extension is 150%, a sufficient distance between the conductive particles cannot be ensured, and therefore the contact probability of the conductive particles 203 is improved. It can be seen from this that when the first resin film 204 to which the conductive particles 203 are trans-bonded is stretched uniaxially, it is preferable to stretch with an elongation greater than 150%, that is, longer than 150% of the original length.

進而，根據實施例31至39，可知粒子密度無論片材202之溝槽210之模具之形狀如何，均與延伸率成比例地降低。由該等結果亦可知，導電性粒子203之粒子間之空隙因延伸而產生，且依存於一方向。 Furthermore, according to Examples 31 to 39, it can be seen that the particle density decreases in proportion to the elongation regardless of the shape of the mold of the groove 210 of the sheet 202. From these results, it can also be seen that the voids between the conductive particles 203 are generated due to extension and depend on one direction.

由此可知，於使轉黏有導電性粒子203之第1樹脂膜204單軸延伸時，較佳為以至少大於150%之延伸率即長於原始長度之150%之方式延伸。再者，於實施例31及實施例34之延伸200%之情形時，粒子密度與其以外之情形相比增大，認為其原因為：於溝槽210之間隔S與導電性粒子203相同之情形時，依然存在導電性粒子203之接觸之可能性。 It can be seen from this that when the first resin film 204 to which the conductive particles 203 are trans-bonded is stretched uniaxially, it is preferable to stretch with an elongation greater than 150%, that is, longer than 150% of the original length. Furthermore, in the case of 200% extension of Example 31 and Example 34, the particle density increased compared to the other cases. It is believed that the reason is that the interval S between the trenches 210 and the conductive particles 203 are the same. At this time, there is still the possibility of contact of the conductive particles 203.

又，就電極220之大小，即溝槽210之寬度W之影響來看，可知隨著電極220之剖面增大，粒子密度減小。又，根據實施例31，即便延伸200%，亦可見二連結粒子之產生。認為其於電極220之剖面與導電性粒子203相同之情形 時，會對轉印產生影響。由此可知，溝槽210之寬度W較佳為至少大於導電性粒子203之直徑。 In addition, in view of the influence of the size of the electrode 220, that is, the width W of the trench 210, it can be seen that as the cross section of the electrode 220 increases, the particle density decreases. Moreover, according to Example 31, even if the extension is 200%, the generation of two-linked particles can be seen. It is considered that the cross section of the electrode 220 is the same as the conductive particle 203 , It will affect the transfer. From this, it can be seen that the width W of the trench 210 is preferably at least larger than the diameter of the conductive particle 203.

進而，就電極220之寬度即粒子列203a之列間距離S之影響來看，由實施例32、及實施例34至36可知，隨著粒子列203a之列間距離S變大，粒子密度、二連結粒子率均減少。由此可知，粒子列203a之列間距離S較佳為至少大於導電性粒子203之直徑。 Furthermore, in view of the influence of the width of the electrode 220, that is, the distance S between the particle rows 203a, it can be seen from Example 32 and Examples 34 to 36 that as the distance S between the particle rows 203a increases, the particle density, The rate of two connected particles is reduced. From this, it can be seen that the distance S between the particle rows 203 a is preferably at least greater than the diameter of the conductive particles 203.

又，就電極220之厚度即溝槽210之深度D之影響來看，由實施例32、及實施例37至39可知，隨著電極220之厚度即溝槽210之深度D增大，粒子密度增加。認為其原因為：若溝槽210變深，則第1樹脂層205之樹脂會進入溝槽210之內部，因此轉印率變佳。又，如上所述，可知於溝槽210之深度D與導電性粒子203之直徑同等程度之情形時，於將導電性粒子203填充於溝槽210中之後利用刮板222去除時，損傷導電性粒子203之表面之程度變大，因此溝槽210之深度D較佳為至少大於導電性粒子203之直徑。 In addition, with regard to the influence of the thickness of the electrode 220, that is, the depth D of the trench 210, it can be seen from Example 32 and Examples 37 to 39 that as the thickness of the electrode 220, that is, the depth D of the trench 210 increases, the particle density Increase. It is considered that the reason is that if the groove 210 becomes deeper, the resin of the first resin layer 205 enters the inside of the groove 210, so the transfer rate becomes better. In addition, as described above, it can be seen that when the depth D of the trench 210 is about the same as the diameter of the conductive particles 203, when the conductive particles 203 are filled in the trench 210 and then removed by the squeegee 222, the conductivity is damaged. The surface of the particle 203 becomes larger, so the depth D of the groove 210 is preferably at least greater than the diameter of the conductive particle 203.

1‧‧‧異向性導電膜 1‧‧‧Anisotropic conductive film

2‧‧‧片材 2‧‧‧Sheet

3‧‧‧導電性粒子 3‧‧‧Conductive particles

4‧‧‧第1樹脂膜 4‧‧‧The first resin film

5‧‧‧第1樹脂層 5‧‧‧The first resin layer

6、9‧‧‧基礎膜 6,9‧‧‧Basic film

7‧‧‧第2樹脂膜 7‧‧‧Second resin film

8‧‧‧第2樹脂層 8‧‧‧Second resin layer

Claims (8)

一種異向性導電膜，其具備： 樹脂層、及 數個導電性粒子，其與上述樹脂層接觸； 於上述樹脂層中，上述導電性粒子排列於第1方向上而形成之粒子列並列複數列於與上述第1方向不同之第2方向上， 上述第1方向係不包括與膜之長度方向正交的方向， 上述粒子列係以上述導電性粒子向上述第1方向延伸之波形狀、矩形波狀、鋸齒狀、或格子狀之圖案來排列。An anisotropic conductive film, which has: Resin layer, and Several conductive particles, which are in contact with the above-mentioned resin layer; In the resin layer, the conductive particles are arranged in a first direction to form particle rows in parallel in a plurality of rows in a second direction different from the first direction, The above-mentioned first direction does not include the direction orthogonal to the longitudinal direction of the film, The particle row is arranged in a wave shape, a rectangular wave shape, a zigzag shape, or a lattice pattern in which the conductive particles extend in the first direction. 如申請專利範圍第1項之異向性導電膜，其中，複數之上述粒子列並列於膜之長度方向。For example, the anisotropic conductive film in the first item of the scope of the patent application, wherein a plurality of the above-mentioned particles are arranged side by side in the length direction of the film. 如申請專利範圍第1項之異向性導電膜，其中，上述第1方向係相對於膜之長度方向傾斜的方向。For example, the anisotropic conductive film in the first item of the scope of patent application, wherein the above-mentioned first direction is a direction inclined with respect to the longitudinal direction of the film. 如申請專利範圍第1至3項中任一項之異向性導電膜，其中，上述粒子列之第1方向中之導電粒子間距離為等距。For example, the anisotropic conductive film of any one of items 1 to 3 in the scope of the patent application, wherein the distance between the conductive particles in the first direction of the above-mentioned particle row is equidistant. 如申請專利範圍第1至3項中任一項之異向性導電膜，其中，上述粒子列被規則地並列複數列於上述第2方向上。For example, the anisotropic conductive film according to any one of items 1 to 3 in the scope of the patent application, wherein the above-mentioned particle array is regularly arranged in plural in the above-mentioned second direction. 如申請專利範圍第1至3項中任一項之異向性導電膜，其中，上述樹脂層至少由第1樹脂層與第2樹脂層此兩層所構成， 上述導電性粒子至少接觸上述第1樹脂層。For example, the anisotropic conductive film of any one of items 1 to 3 in the scope of the patent application, wherein the above-mentioned resin layer is composed of at least two layers of a first resin layer and a second resin layer, The said electroconductive particle contacts at least the said 1st resin layer. 一種連接結構體，其將申請專利範圍第1至6項中任一項之異向性導電膜用於電子零件之連接。A connection structure that uses the anisotropic conductive film of any one of the first to sixth patent applications for the connection of electronic parts. 一種連接結構體之製造方法，係經由異向導電性膜將電子零件彼此連結之連接結構體之製造方法，其使用申請專利範圍第1至6項中任一項之異向性導電膜而將上述電子零件彼此異向性導電連接。A method of manufacturing a connecting structure is a method of manufacturing a connecting structure in which electronic parts are connected to each other through an anisotropic conductive film, which uses the anisotropic conductive film in any one of the scope of patent application 1 to 6. The above-mentioned electronic components are electrically connected anisotropically.
TW108132428A 2012-08-01 2013-08-01 Anisotropic conductive film, connection structure, and manufacturing method of connection structure TWI743560B (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2012171331 2012-08-01
JPJP2012-171331 2012-08-01
JP2013160117A JP6169915B2 (en) 2012-08-01 2013-08-01 Anisotropic conductive film manufacturing method, anisotropic conductive film, and connection structure
JPJP2013-160116 2013-08-01
JPJP2013-160117 2013-08-01
JPJP2013-160118 2013-08-01
JP2013160118A JP6169916B2 (en) 2012-08-01 2013-08-01 Anisotropic conductive film manufacturing method, anisotropic conductive film, and connection structure
JP2013160116A JP6169914B2 (en) 2012-08-01 2013-08-01 Anisotropic conductive film manufacturing method, anisotropic conductive film, and connection structure

Publications (2)

Publication Number Publication Date
TW201947614A TW201947614A (en) 2019-12-16
TWI743560B true TWI743560B (en) 2021-10-21

Family

ID=50028091

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108132428A TWI743560B (en) 2012-08-01 2013-08-01 Anisotropic conductive film, connection structure, and manufacturing method of connection structure

Country Status (3)

Country Link
KR (2) KR20210146455A (en)
TW (1) TWI743560B (en)
WO (1) WO2014021424A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289831B2 (en) * 2013-07-29 2018-03-07 デクセリアルズ株式会社 Manufacturing method of conductive adhesive film, conductive adhesive film, and manufacturing method of connector
TWI739287B (en) * 2014-10-28 2021-09-11 日商迪睿合股份有限公司 Anisotropic conductive film, its manufacturing method and connection structure
JP6759578B2 (en) 2014-12-22 2020-09-23 デクセリアルズ株式会社 Heteroconductive film and connecting structures
WO2017141863A1 (en) * 2016-02-15 2017-08-24 デクセリアルズ株式会社 Anisotropic conductive film, manufacturing method therefor, and connection structure
JP7046351B2 (en) * 2018-01-31 2022-04-04 三国電子有限会社 How to make a connection structure
JP2022121154A (en) * 2021-02-08 2022-08-19 デクセリアルズ株式会社 Manufacturing method of connection body and the connection body

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5498262A (en) * 1992-12-31 1996-03-12 Bryan; Donald W. Spinal fixation apparatus and method
TW200501288A (en) * 2003-03-31 2005-01-01 Sumitomo Electric Industries Anisotropic conductive film and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10104650A (en) * 1996-09-26 1998-04-24 Denso Corp Liquid crystal display element and its anisotropic conductive member
CN101483080A (en) 2003-12-04 2009-07-15 旭化成电子材料元件株式会社 Anisotropic conductive adhesive sheet and coupling structure
JP4887700B2 (en) * 2005-09-09 2012-02-29 住友ベークライト株式会社 Anisotropic conductive film and electronic / electrical equipment
JP2007217503A (en) * 2006-02-15 2007-08-30 Asahi Kasei Electronics Co Ltd Anisotropically electroconductive adhesive film
JP4880533B2 (en) * 2007-07-03 2012-02-22 ソニーケミカル＆インフォメーションデバイス株式会社 Anisotropic conductive film, method for producing the same, and joined body
JP2010033793A (en) * 2008-07-28 2010-02-12 Tokai Rubber Ind Ltd Method for manufacturing particle transfer film
JP5608426B2 (en) * 2010-05-31 2014-10-15 デクセリアルズ株式会社 Method for manufacturing anisotropic conductive film
JP2010251337A (en) 2010-08-05 2010-11-04 Sony Chemical & Information Device Corp Anisotropic conductive film, method for manufacturing the same and connection structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5498262A (en) * 1992-12-31 1996-03-12 Bryan; Donald W. Spinal fixation apparatus and method
TW200501288A (en) * 2003-03-31 2005-01-01 Sumitomo Electric Industries Anisotropic conductive film and manufacturing method thereof

Also Published As

Publication number Publication date
KR20210146455A (en) 2021-12-03
KR20200029628A (en) 2020-03-18
KR102333363B1 (en) 2021-12-01
WO2014021424A1 (en) 2014-02-06
TW201947614A (en) 2019-12-16

Similar Documents

Publication Publication Date Title
JP7357037B2 (en) Anisotropic conductive film, connected structure, and method for manufacturing connected structure
TWI743560B (en) Anisotropic conductive film, connection structure, and manufacturing method of connection structure
JP6289831B2 (en) Manufacturing method of conductive adhesive film, conductive adhesive film, and manufacturing method of connector
JP6144353B2 (en) Improved fixed array anisotropic conductive film having multistage partially embedded particle morphology and method for manufacturing the same
TW201606798A (en) Anisotropic conductive film and manufacturing method thereof
KR101986470B1 (en) Method for producing conductive adhesive film, conductive adhesive film, and method for producing connection body