TWI740148B - A surface modifying light emitting chip and its fabricating method - Google Patents

A surface modifying light emitting chip and its fabricating method Download PDF

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TWI740148B
TWI740148B TW108118132A TW108118132A TWI740148B TW I740148 B TWI740148 B TW I740148B TW 108118132 A TW108118132 A TW 108118132A TW 108118132 A TW108118132 A TW 108118132A TW I740148 B TWI740148 B TW I740148B
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light
emitting chip
emitting
wafer
level package
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TW202044622A (en
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李宛儒
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李宛儒
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Abstract

The invention provides a surface modifying light emitting chip and its fabricating method. The surface modifying light emitting chip comprises a light emitting chip and a diffusion layer, wherein the diffusion layer is coat on top surface of the light emitting chip. The fabricating method comprises powder adhering process.

Description

一種表面修飾化之發光晶片及其製備方法 Surface-modified luminescent chip and preparation method thereof

本發明係關於一種表面修飾化之發光晶片及其製備方法。特別地,上述之表面修飾化之發光晶片是一正面頂部具有擴散膠層修飾之發光晶片。 The invention relates to a surface-modified light-emitting chip and a preparation method thereof. In particular, the above-mentioned surface-modified light-emitting chip is a light-emitting chip modified with a diffusion adhesive layer on the top of the front surface.

電視面板背光裝置和平面照明裝置所使用的發光晶片(LED)是單向頂部出光(發光角度120度),會產生亮點,因此需使用透鏡讓光學角度放大、減少頂部亮點,同時加上擴散面板加強透鏡的霧化作用,達到均勻出光和面照度一致的效果。 The light emitting chip (LED) used in the TV panel backlight device and the flat lighting device is a unidirectional top emitting light (emission angle of 120 degrees), which will produce bright spots. Therefore, a lens is needed to enlarge the optical angle and reduce the top bright spots. At the same time, a diffuser panel is added. Strengthen the fogging effect of the lens to achieve the effect of uniform light emission and uniform surface illumination.

由於擴散片、透鏡和發光晶片必須維持一適當的距離,透鏡和擴散片才能有效的發揮霧化作用使其出光均勻,且透鏡本身就有一定的厚度,因此一包含發光晶片、透鏡和擴散片的面板背光裝置或照明裝置的厚度通常大於3公分以上,無法應用在先進薄型設計的面板電子產品或照明裝置。 Since the diffuser, lens and light-emitting chip must maintain a proper distance, the lens and the diffuser can effectively perform the atomization effect to make the light uniform, and the lens itself has a certain thickness, so one includes the light-emitting chip, lens and diffuser The thickness of the panel backlight device or lighting device is usually more than 3 cm, which cannot be applied to advanced thin-design panel electronic products or lighting devices.

綜上所述,在現今面板和照明產業,對於開發一能 應用在薄型化設計的面板電子產品或照明裝置的發光晶片實為一亟待解決和研發的重要課題。 In summary, in today’s panel and lighting industry, the development of an energy The light-emitting chip applied to the thin-designed panel electronic product or the lighting device is an important subject that needs to be solved and developed urgently.

鑒於上述之發明背景,為了符合產業上的要求,本發明提供一種表面修飾化之發光晶片及其製備方法以解決克服先前技術所遭遇之技術瓶頸,以達成產業所需之目的。 In view of the aforementioned background of the invention, in order to meet the requirements of the industry, the present invention provides a surface-modified light-emitting chip and a preparation method thereof to solve the technical bottleneck encountered by the prior art and achieve the purpose required by the industry.

本發明之第一目的在於提供一種表面修飾化之發光晶片,其包含一發光晶片和一擴散膠層;和該擴散膠層覆蓋在該發光晶片的正面頂部,藉此構成所述之表面修飾化之發光晶片。 The first object of the present invention is to provide a surface-modified light-emitting chip, which comprises a light-emitting chip and a diffusion glue layer; and the diffusion glue layer covers the top of the front surface of the light-emitting chip, thereby forming the surface modification The light-emitting chip.

具體地,該發光晶片的製作實施態樣包含晶片級封裝(Chip Scale Package)、融發光膠、點膠或發光膜體的貼合。 Specifically, the manufacturing implementation of the light-emitting chip includes chip-scale packaging, luminescent glue, dispensing, or bonding of light-emitting film bodies.

特別地,上述的表面修飾化之發光晶片的發光面是五面。其正面頂部出光量可以藉由具有不同透光度的擴散膠層調整,再加上四面出光來均勻上述之表面修飾化之發光晶片的整個出光。因此,本發明所提供的表面修飾化之發光晶片具有良好的發光均勻度,沒有發光不均勻的問題。 In particular, the light-emitting surface of the above-mentioned surface-modified light-emitting chip is five-sided. The amount of light emitted from the top of the front surface can be adjusted by a diffuser layer with different light transmittances, and the light emitted from all sides is added to uniform the entire light emitted from the above-mentioned surface-modified light-emitting chip. Therefore, the surface-modified light-emitting chip provided by the present invention has a good light-emitting uniformity without the problem of uneven light-emitting.

具體地,上述之擴散膠層具有10~90%的透光度;較佳地,上述之擴散膠層具有20~50%的透光度。 Specifically, the above-mentioned diffusion adhesive layer has a light transmittance of 10 to 90%; preferably, the above-mentioned diffusion adhesive layer has a light transmittance of 20 to 50%.

本發明之另一目的在於提供一種表面修飾化之發光晶片的製備方法,其包含:提供一發光晶片;和進行一固定程序 使一擴散膠層固定在上述之發光晶片的正面頂部,藉此構成所述的表面修飾化之發光晶片。 Another object of the present invention is to provide a method for preparing a surface-modified light-emitting chip, which comprises: providing a light-emitting chip; and performing a fixing procedure A diffusion adhesive layer is fixed on the top of the front surface of the above-mentioned light-emitting chip, thereby forming the above-mentioned surface-modified light-emitting chip.

具體地,該發光晶片的製作實施態樣包含晶片級封裝、融發光膠、點膠或發光膜體的貼合。 Specifically, the manufacturing implementation of the light-emitting chip includes wafer-level packaging, melt-light-emitting glue, glue dispensing, or bonding of light-emitting film bodies.

具體地,所述之固定程序包含粉體附著程序、紫外線照射程序、加熱程序、熱熔壓程序或其組合。 Specifically, the fixing procedure includes a powder attachment procedure, an ultraviolet irradiation procedure, a heating procedure, a hot melt pressing procedure, or a combination thereof.

根據本發明所提供的表面修飾化之發光晶片及其製備方法。本發明之表面修飾化之發光晶片是五面出光,僅正面頂部覆蓋可調控透光度的擴散膠層,並且利用其餘四面的出光均勻整個表面修飾化之發光晶片的出光。據此,本發明的表面修飾化之發光晶片的優點和無法預期的功效包括:(1)使用擴散膠層覆蓋光源的正面頂部以達到自我霧化的效果;(2)直接降低發光面產生亮點的視覺缺陷,和(3)維持五面發光使其具有均勻的發光度或面照度。 According to the present invention, the surface-modified light-emitting chip and the preparation method thereof are provided. The surface-modified light-emitting chip of the present invention emits light from five sides, only the top of the front surface is covered with a diffusing glue layer that can adjust the light transmittance, and the light from the remaining four sides is used to evenly emit light from the entire surface-modified light-emitting chip. Accordingly, the advantages and unpredictable effects of the surface-modified light-emitting chip of the present invention include: (1) using a diffuser layer to cover the top of the front surface of the light source to achieve the effect of self-atomization; (2) directly reducing the bright spots on the light-emitting surface The visual defect, and (3) maintain five-sided luminescence to have uniform luminosity or surface illuminance.

1:晶片級封裝的表面修飾化之發光晶片 1: Surface-modified light-emitting chips for wafer-level packaging

11:晶片 11: chip

12:發光粉層 12: Luminous powder layer

13:擴散膠層 13: Diffusion glue layer

第1圖是本發明之晶片級封裝製程的表面修飾化之發光晶片的橫切面示意圖;第2圖是未經表面修飾化之發光晶片的實體圖;第3圖是本發明之表面修飾化之發光晶片的實體正面圖;和第4圖是本發明之表面修飾化之發光晶片的實體側面圖。 Figure 1 is a schematic cross-sectional view of a light-emitting chip with surface modification in the wafer-level packaging process of the present invention; Figure 2 is a physical view of a light-emitting chip without surface modification; Figure 3 is a diagram of the surface modification of the present invention The physical front view of the light-emitting chip; and FIG. 4 is the physical side view of the surface-modified light-emitting chip of the present invention.

有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中,將可清楚的呈現。為了能徹底地瞭解本發明,將在下列的描述中提出詳盡的步驟及其組成。顯然地,本發明的施行並未限定於該領域之技藝者所熟習的特殊細節。另一方面,眾所周知的組成或步驟並未描述於細節中,以避免造成本發明不必要之限制。本發明的較佳實施例會詳細描述如下,然而除了這些詳細描述之外,本發明還可以廣泛地施行在其他的實施例中,且本發明的範圍不受限定,其以之後的專利範圍為準。 The foregoing and other technical contents, features, and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. In order to thoroughly understand the present invention, detailed steps and their composition will be proposed in the following description. Obviously, the implementation of the present invention is not limited to the specific details familiar to those skilled in the field. On the other hand, well-known components or steps are not described in details to avoid unnecessary limitation of the present invention. The preferred embodiments of the present invention will be described in detail as follows. However, in addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, which shall be subject to the following patent scope .

根據本發明的第一實施例,本發明提供一種表面修飾化之發光晶片,其包含一發光晶片和一擴散膠層;和該擴散膠層覆蓋在該發光晶片的正面頂部,藉此構成所述之表面修飾化之發光晶片。 According to the first embodiment of the present invention, the present invention provides a surface-modified light-emitting chip, which comprises a light-emitting chip and a diffusion glue layer; and the diffusion glue layer covers the top of the front surface of the light-emitting chip, thereby forming the The surface modified light-emitting chip.

於一實施例,該發光晶片的製作實施態樣包含晶片級封裝、融發光膠、點膠、發光膜體的貼合或其組合。 In one embodiment, the manufacturing implementation of the light-emitting chip includes wafer-level packaging, luminescent glue, dispensing, bonding of light-emitting film bodies, or a combination thereof.

以下係為晶片級封裝製作的表面修飾化之發光晶片的實施例。 The following are examples of surface-modified light-emitting chips manufactured by wafer-level packaging.

於一實施例,該晶片級封裝是包覆一發光粉層在晶片的表面。 In one embodiment, the wafer level package is coated with a luminescent powder layer on the surface of the chip.

於一實施例,該發光粉層包含高分子膠水、矽膠、環氧樹脂或其組合 In one embodiment, the luminescent powder layer includes polymer glue, silicon glue, epoxy resin or a combination thereof

於一實施例,該發光粉層是由一發光粉體或發光膜體所形成。 In one embodiment, the luminescent powder layer is formed of a luminescent powder or a luminescent film.

於一具體實施例,該發光粉體包含螢光粉、磷光粉或任一可導光之粉體。 In a specific embodiment, the luminescent powder includes phosphor, phosphor, or any powder that can guide light.

於一具體實施例,該發光膜體包含高分子膠水、陶瓷粉、石墨烯粉、玻璃粉、環氧樹脂、矽膠、臘或石蠟烴。 In a specific embodiment, the light-emitting film body comprises polymer glue, ceramic powder, graphene powder, glass powder, epoxy resin, silicone rubber, wax or paraffin hydrocarbon.

於一實施例,該擴散膠層包含高分子膠水、矽膠、環氧樹脂、使其霧化的物質或其組合。具體地,該擴散膠層包含膠水和使其霧化的材質。所述之使其霧化的材質的功能是使擴散膠層產生霧化作用。 In one embodiment, the diffusion adhesive layer includes polymer glue, silicon glue, epoxy resin, atomized substance, or a combination thereof. Specifically, the diffusion glue layer includes glue and a material for atomizing it. The function of the material to make it atomized is to make the diffuser layer produce atomization.

於一實施例,該擴散膠層具有10~90%的透光率;較佳地,該擴散膠層具有20~50%的透光率。 In one embodiment, the diffusion adhesive layer has a light transmittance of 10 to 90%; preferably, the diffusion adhesive layer has a light transmittance of 20 to 50%.

於一具體範例,本發明所述的表面修飾化之發光晶片1是晶片級封裝,其橫切面如第1圖所示。其中晶片11的表面被發光粉層12所包覆,然後在其正面頂部再覆蓋擴散膠層13,藉此構成本發明所述的表面修飾化之發光晶片1。 In a specific example, the surface-modified light-emitting chip 1 of the present invention is a wafer-level package, and its cross-section is as shown in FIG. 1. The surface of the chip 11 is covered by the light-emitting powder layer 12, and then the top of the front surface is covered with a diffusion adhesive layer 13, thereby forming the surface-modified light-emitting chip 1 of the present invention.

於另一具體範例,發光粉層12是由一發光粉體或發 光膜體所形成。其中該發光粉體包含螢光粉、磷光粉或任一可導光之粉體;該發光膜體包含高分子膠水、陶瓷粉、石墨烯粉、玻璃粉、環氧樹脂、矽膠、臘或石蠟烴。 In another specific example, the luminescent powder layer 12 is made of a luminescent powder or hair The light film body is formed. The luminescent powder includes phosphor, phosphor, or any powder that can guide light; the luminescent film includes polymer glue, ceramic powder, graphene powder, glass powder, epoxy resin, silicone, wax or paraffin wax hydrocarbon.

上述之擴散膠層13具有10~90%的透光率;較佳地,其具有20~50%的透光率。 The aforementioned diffusion adhesive layer 13 has a light transmittance of 10% to 90%; preferably, it has a light transmittance of 20% to 50%.

綜上所述,本發明所述的表面修飾化之發光晶片的發光面是五面。其正面頂部出光亮度可以藉由具有不同透光度的擴散膠層調整,減少亮點產生,再加上四面出光來均勻上述之表面修飾化之發光晶片的整個出光。因此,本發明所提供的表面修飾化之發光晶片具有良好的發光均勻度,沒有發光不均勻的問題。 In summary, the light-emitting surface of the surface-modified light-emitting chip of the present invention is five-sided. The brightness of the light-emitting chip on the top of the front surface can be adjusted by diffusing glue layers with different light transmittances to reduce the occurrence of bright spots. In addition, the light from all four sides can be added to uniform the entire light emitted from the above-mentioned surface-modified light-emitting chip. Therefore, the surface-modified light-emitting chip provided by the present invention has a good light-emitting uniformity without the problem of uneven light-emitting.

本發明的第二實施例在於提供一種表面修飾化之發光晶片的製備方法,其包含:提供一發光晶片;和進行一固定程序使一擴散膠層固定在上述之發光晶片的正面頂部,藉此構成所述的表面修飾化之發光晶片。 The second embodiment of the present invention is to provide a method for preparing a surface-modified light-emitting chip, which includes: providing a light-emitting chip; and performing a fixing procedure to fix a diffusion adhesive layer on the top of the front surface of the light-emitting chip, thereby It constitutes the light-emitting chip with surface modification.

於一實施例,上述之發光晶片的製作實施態樣包含晶片級封裝、融發光膠、點膠、發光膜體的貼合或其組合。 In one embodiment, the above-mentioned light-emitting chip fabrication mode includes wafer-level packaging, melt-light glue, glue dispensing, bonding of light-emitting film bodies, or a combination thereof.

以下係為晶片級封裝製程的表面修飾化之發光晶片的實施例。 The following is an example of a light-emitting chip with surface modification in a wafer-level packaging process.

於一實施例,該晶片級封裝製程的步驟包含提供一 發光粉體或發光膜體;進行一固定程序使該發光粉體或發光膜體包覆在一晶片的表面形成一發光粉層,藉此構成一發光晶片,和在該發光晶片的正面頂部覆蓋一擴散膠層,藉此完成所述之晶片級封裝製程的表面修飾化之發光晶片。 In one embodiment, the steps of the wafer-level packaging process include providing a Light-emitting powder or light-emitting film; performing a fixed procedure to make the light-emitting powder or light-emitting film cover the surface of a chip to form a light-emitting powder layer, thereby forming a light-emitting chip, and covering the top surface of the light-emitting chip A diffusion adhesive layer is used to complete the surface-modified light-emitting chip of the wafer-level packaging process.

具體地,所述之固定程序包含塗佈程序、紫外線照射程序、加熱程序、熱熔壓程序或其組合。 Specifically, the fixing procedure includes a coating procedure, an ultraviolet irradiation procedure, a heating procedure, a hot melt pressing procedure, or a combination thereof.

於一實施例,該發光粉體包含螢光粉、磷光粉或任一可導光之粉體。 In one embodiment, the luminescent powder includes phosphor, phosphor, or any powder that can guide light.

於一實施例,該發光膜體包含高分子膠水、陶瓷粉、石墨烯粉、玻璃粉、環氧樹脂、矽膠、臘或石蠟烴。 In one embodiment, the light-emitting film body includes polymer glue, ceramic powder, graphene powder, glass powder, epoxy resin, silicon glue, wax or paraffin hydrocarbon.

於一實施例,該發光粉層包含高分子膠水、矽膠、環氧樹脂或其組合。 In one embodiment, the luminescent powder layer includes polymer glue, silicon glue, epoxy resin, or a combination thereof.

於一實施例,該擴散膠層包含高分子膠水、矽膠、環氧樹脂、使其霧化的物質或其組合。具體地,該擴散膠層包含膠水和使其霧化的材質。所述之使其霧化的材質的功能是使擴散膠層產生霧化作用。 In one embodiment, the diffusion adhesive layer includes polymer glue, silicon glue, epoxy resin, atomized substance, or a combination thereof. Specifically, the diffusion glue layer includes glue and a material for atomizing it. The function of the material to make it atomized is to make the diffuser layer produce atomization.

於一實施例,該擴散膠層具有10~90%的透光率。較佳地,該擴散膠層具有20~50%的透光率。 In one embodiment, the diffusion adhesive layer has a light transmittance of 10% to 90%. Preferably, the diffusion adhesive layer has a light transmittance of 20-50%.

於一具體範例,本發明所述的表面修飾化之發光晶片的製備方法是晶片級封裝製程的表面修飾化之發光晶片1,其步 驟包括:提供一晶片11;藉由一固定程序將一發光粉體或發光膜體在晶片11的表面上形成一發光粉層12,藉此構成一發光晶片;和進行一固定程序使一擴散膠層13固定在上述之發光晶片的正面頂部,藉此構成所述的晶片級封裝製程的表面修飾化之發光晶片1。 In a specific example, the method for preparing the surface-modified light-emitting chip of the present invention is the surface-modified light-emitting chip 1 of the wafer-level packaging process. The steps include: providing a chip 11; forming a luminescent powder layer 12 on the surface of the wafer 11 by a luminescent powder or a luminescent film body by a fixing process, thereby forming a luminescent chip; and performing a fixing process to diffuse a light-emitting chip The glue layer 13 is fixed on the top of the front surface of the above-mentioned light-emitting chip, thereby forming the light-emitting chip 1 with surface modification in the above-mentioned wafer-level packaging process.

上述之固定程序包括紫外線照射程序、加熱程序、熱熔壓程序或其組合。較佳地,該加熱程序的操作溫度範圍是20~200℃。 The above-mentioned fixing procedure includes an ultraviolet irradiation procedure, a heating procedure, a hot melt pressing procedure or a combination thereof. Preferably, the operating temperature range of the heating program is 20 to 200°C.

於另一具體範例,上述之發光膜體的製造步驟包含使用一發光粉,如螢光粉或磷光粉和一膠水,如矽膠或環氧樹脂混合後,使其半固化成膜形。 In another specific example, the manufacturing step of the above-mentioned light-emitting film body includes using a light-emitting powder, such as phosphor or phosphor, and a glue, such as silicone or epoxy resin, to be mixed to make it semi-cured into a film shape.

上述之固定程序還包括表面粉體附著程序、紫外線照射、加熱或熱熔壓等步驟。 The above-mentioned fixing procedure also includes the steps of surface powder adhesion procedure, ultraviolet irradiation, heating or hot melt pressing.

如第2圖所示,其是沒有擴散膠層進行正面頂部修飾的發光晶片。 As shown in Figure 2, it is a light-emitting chip without a diffuser layer for top surface modification.

第3圖是根據本發明第二實施例所製成的表面修飾化之發光晶片的正面圖。 FIG. 3 is a front view of a surface-modified light-emitting chip manufactured according to the second embodiment of the present invention.

第4圖是根據本發明第二實施例所製成的表面修飾化之發光晶片的側面圖。明顯地,側面圖可以觀察到兩層顏色不一的透明層,其中上層是擴散膠層,介於中間的是發光粉層,其 發光面是五面。 FIG. 4 is a side view of the light-emitting chip with surface modification manufactured according to the second embodiment of the present invention. Obviously, two transparent layers with different colors can be observed in the side view. The upper layer is the diffuser layer, and the middle is the luminescent powder layer. The luminous surface is five sides.

綜上所述,根據本發明所提供的表面修飾化之發光晶片及其製備方法。本發明之表面修飾化之發光晶片是五面出光,僅正面頂部覆蓋可調控透光度的擴散膠層,並且利用其餘四面的出光均勻整個表面修飾化之發光晶片的出光。據此,本發明的表面修飾化之發光晶片的優點和無法預期的功效包括:(1)使用擴散膠層覆蓋光源的正面頂部以達到自我霧化的效果;(2)直接降低發光面產生亮點的視覺缺陷,和(3)維持五面發光使其具有均勻的發光度或面照度,因此能克服既有技術的瓶頸而廣泛的應用在薄型化和輕型化的面板背光裝置或平面照明產業。 In summary, the surface-modified light-emitting chip and the preparation method thereof are provided according to the present invention. The surface-modified light-emitting chip of the present invention emits light from five sides, only the top of the front surface is covered with a diffusing glue layer that can adjust the light transmittance, and the light from the remaining four sides is used to uniformly emit light from the entire surface-modified light-emitting chip. Accordingly, the advantages and unpredictable effects of the surface-modified light-emitting chip of the present invention include: (1) using a diffuser layer to cover the top of the front surface of the light source to achieve the effect of self-atomization; (2) directly reducing the bright spots on the light-emitting surface Visual defects, and (3) maintain five-sided light to have uniform luminosity or surface illuminance, so it can overcome the bottleneck of existing technology and be widely used in thin and light panel backlight devices or flat lighting industry.

以上雖以特定範例說明本發明,但並不因此限定本發明之範圍,只要不脫離本發明之要旨,熟悉本技藝者瞭解在不脫離本發明的意圖及範圍下可進行各種變形或變更。此外,摘要部分和標題僅是用來輔助專利文件搜尋之用,並非用來限制本發明之權利範圍。 Although specific examples are used to describe the present invention above, the scope of the present invention is not limited thereby. As long as the spirit of the present invention is not deviated, those skilled in the art will understand that various modifications or changes can be made without departing from the intent and scope of the present invention. In addition, the abstract part and title are only used to assist in searching for patent documents, and are not used to limit the scope of rights of the present invention.

1:晶片級封裝的表面修飾化之發光晶片 1: Surface-modified light-emitting chips for wafer-level packaging

11:晶片 11: chip

12:發光粉層 12: Luminous powder layer

13:擴散膠層 13: Diffusion glue layer

Claims (15)

一種晶片級封裝的表面修飾化之發光晶片,其係由一發光晶片和一擴散膠層構成;該發光晶片的製作實施態樣是晶片級封裝,該晶片級封裝是包覆一發光粉層在一晶片的表面;和該擴散膠層覆蓋在該發光晶片的正面頂部,藉此構成所述之晶片級封裝的表面修飾化之發光晶片;該擴散膠層是膠水和使其霧化的材質所構成;所述之使其霧化的材質的功能是使該擴散膠層產生霧化作用。 A surface-modified light-emitting chip of a wafer-level package, which is composed of a light-emitting chip and a diffusion adhesive layer; The surface of a chip; and the diffusion adhesive layer covers the top of the front surface of the light-emitting chip, thereby constituting the surface-modified light-emitting chip of the wafer-level package; the diffusion adhesive layer is made of glue and atomized material Composition; The function of the material that makes it atomized is to make the diffuser layer produce atomization. 如申請專利範圍第1項所述的晶片級封裝的表面修飾化之發光晶片,其發光面是五面。 The surface-modified light-emitting chip of the wafer-level package as described in item 1 of the scope of patent application has five light-emitting surfaces. 如申請專利範圍第1項所述的晶片級封裝的表面修飾化之發光晶片,該發光粉層是高分子膠水、矽膠、環氧樹脂或其組合。 For the surface-modified light-emitting chip of the wafer-level package as described in the first item of the scope of patent application, the light-emitting powder layer is made of polymer glue, silicon glue, epoxy resin or a combination thereof. 如申請專利範圍第1項所述的晶片級封裝的表面修飾化之發光晶片,該發光粉層是由一發光粉體或發光膜體所形成。 In the surface-modified light-emitting chip of the wafer-level package as described in the first item of the scope of patent application, the light-emitting powder layer is formed by a light-emitting powder or a light-emitting film body. 如申請專利範圍第4項所述的晶片級封裝的表面修飾化之發光晶片,該發光膜體是高分子膠水、陶瓷粉、石墨烯粉、玻璃粉、環氧樹脂、矽膠、臘或石蠟烴。 As described in item 4 of the scope of patent application, the surface-modified light-emitting chip of the wafer-level package, the light-emitting film body is polymer glue, ceramic powder, graphene powder, glass powder, epoxy resin, silicon glue, wax or paraffin hydrocarbon . 如申請專利範圍第1項所述的晶片級封裝的表面修飾化之發光晶片,該擴散膠層具有10~90%的透光率。 For the surface-modified light-emitting chip of the wafer-level package as described in item 1 of the scope of patent application, the diffusion adhesive layer has a light transmittance of 10 to 90%. 如申請專利範圍第6項所述的晶片級封裝的表面修飾化之發光晶片,該擴散膠層具有20~50%的透光率。 For the surface-modified light-emitting chip of the wafer-level package as described in item 6 of the scope of patent application, the diffusion adhesive layer has a light transmittance of 20-50%. 一種晶片級封裝的表面修飾化之發光晶片的製備方法,其步驟限定如下:提供一發光晶片,該發光晶片的製作實施態樣是晶片級封裝,該晶片級封裝是包覆一發光粉層在一晶片的表面;和進行一固定程序使一擴散膠層固定在上述之發光晶片的正面頂部,該擴散膠層是膠水和使其霧化的材質所構成;所述之使其霧化的材質的功能是使擴散膠層產生霧化作用,藉此構成所述的晶片級封裝的表面修飾化之發光晶片。 A method for preparing a surface-modified light-emitting chip of a wafer-level package. The steps are defined as follows: a light-emitting chip is provided. A surface of a chip; and performing a fixing procedure to fix a diffusion glue layer on the top of the front surface of the above-mentioned light-emitting chip. The diffusion glue layer is composed of glue and an atomized material; said atomized material Its function is to make the diffusion adhesive layer produce atomization, thereby forming the light-emitting chip of the wafer-level package with surface modification. 如申請專利範圍第8項所述的晶片級封裝的表面修飾化之發光晶片,該發光粉層是由一發光粉體或發光膜體所形成。 For the surface-modified light-emitting chip of the wafer-level package as described in item 8 of the scope of patent application, the light-emitting powder layer is formed by a light-emitting powder or a light-emitting film body. 如申請專利範圍第8項所述之晶片級封裝的表面修飾化之發光晶片的製備方法,該發光粉層是高分子膠水、矽膠、環氧樹脂或其組合。 As described in item 8 of the scope of patent application, the surface-modified light-emitting chip of the wafer-level package is prepared, the light-emitting powder layer is made of polymer glue, silicon glue, epoxy resin or a combination thereof. 如申請專利範圍第9項所述之晶片級封裝的表面修飾化之發光晶片的製備方法,該發光粉體是螢光粉、磷光粉或任一可導光之粉體。 As described in item 9 of the scope of patent application, the surface-modified light-emitting chip of the wafer-level package is prepared, the light-emitting powder is phosphor, phosphor or any light-guiding powder. 如申請專利範圍第9項所述之晶片級封裝的表面修飾化之發光晶片的製備方法,該發光膜體是高分子膠水、陶瓷粉、石墨烯粉、玻璃粉、環氧樹脂、矽膠、臘或石蠟烴。 As described in item 9 of the scope of patent application, the surface-modified light-emitting chip of the wafer-level package is prepared. The light-emitting film is made of polymer glue, ceramic powder, graphene powder, glass powder, epoxy resin, silicon glue, wax Or paraffinic hydrocarbons. 如申請專利範圍第8項所述之晶片級封裝的表面修飾化之發光晶片的製備方法,所述之固定程序是粉體附著程序、紫外線照射程序、加熱程序、熱熔壓程序或其組合。 As described in item 8 of the scope of patent application, the method for preparing a light-emitting chip with a surface modification of a wafer-level package, the fixing process is a powder attachment process, an ultraviolet irradiation process, a heating process, a hot melt pressing process, or a combination thereof. 如申請專利範圍第8項所述之晶片級封裝的表面修飾化之發光晶片的製備方法,該擴散膠層具有10~90%的透光率。 According to the method for preparing the surface-modified light-emitting chip of the wafer-level package as described in item 8 of the scope of patent application, the diffusion adhesive layer has a light transmittance of 10 to 90%. 如申請專利範圍第14項所述之晶片級封裝的表面修飾化之發光晶片的製備方法,該擴散膠層具有20~50%的透光率。 According to the method for preparing the surface-modified light-emitting chip of the wafer-level package as described in item 14 of the scope of patent application, the diffusion adhesive layer has a light transmittance of 20-50%.
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