TWI736940B - Film thickness measuring system and film thickness measuring method - Google Patents

Film thickness measuring system and film thickness measuring method Download PDF

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TWI736940B
TWI736940B TW108125590A TW108125590A TWI736940B TW I736940 B TWI736940 B TW I736940B TW 108125590 A TW108125590 A TW 108125590A TW 108125590 A TW108125590 A TW 108125590A TW I736940 B TWI736940 B TW I736940B
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distance
measuring device
distance measuring
wafer structure
chamber
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TW202104842A (en
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張光雲
張慶麟
車行遠
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力晶積成電子製造股份有限公司
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Abstract

A film thickness measuring system including a processing machine, at least one first distance measuring device and at least one second distance measuring device is provided. The processing machine includes a chamber and a transfer path connected to the chamber. The first distance measuring device and the second distance measuring device face each other and are disposed on the transfer path. A measurement region is located between the first distance measuring device and the second distance measuring device.

Description

膜厚量測系統及膜厚量測方法Film thickness measurement system and film thickness measurement method

本發明是有關於一種半導體製程系統及半導體製程方法，且特別是有關於一種膜厚量測系統及膜厚量測方法。The present invention relates to a semiconductor manufacturing process system and a semiconductor manufacturing process method, and particularly relates to a film thickness measurement system and a film thickness measurement method.

目前光學量測薄膜的方式無法適用在金屬層的量測。現行金屬層的膜厚量測方法是透過電性偵測金屬層的片電阻，再將片電阻進行換算而得到膜厚資料。然而，片電阻的量測方法本身是一種破壞性量測，因此一般都是用控片量測，並不能反映產品薄膜的真實厚度。The current optical measurement method cannot be applied to the measurement of the metal layer. The current method for measuring the film thickness of the metal layer is to detect the sheet resistance of the metal layer electrically, and then convert the sheet resistance to obtain the film thickness data. However, the measurement method of sheet resistance itself is a destructive measurement, so it is generally measured with a control sheet, which does not reflect the true thickness of the product film.

本發明提供一種膜厚量測系統及膜厚量測方法，其可藉由距離來量測晶圓結構的不透光層的厚度變動值，進而反映出產品薄膜的真實厚度。The present invention provides a film thickness measurement system and a film thickness measurement method, which can measure the thickness variation value of the opaque layer of a wafer structure by distance, thereby reflecting the true thickness of the product film.

本發明提出一種膜厚量測系統，包括製程機台、至少一個第一測距裝置與至少一個第二測距裝置。製程機台包括腔室與連接至腔室的傳輸路徑。第一測距裝置與第二測距裝置互相面對且設置在傳輸路徑上。在第一測距裝置與第二測距裝置之間具有量測區。The present invention provides a film thickness measurement system, which includes a process machine, at least one first distance measuring device and at least one second distance measuring device. The process tool includes a chamber and a transmission path connected to the chamber. The first distance measuring device and the second distance measuring device face each other and are arranged on the transmission path. There is a measuring area between the first distance measuring device and the second distance measuring device.

依照本發明的一實施例所述，在上述膜厚量測系統中，更可包括晶圓盒。傳輸路徑可位在晶圓盒與腔室之間。According to an embodiment of the present invention, the above-mentioned film thickness measurement system may further include a wafer cassette. The transfer path can be located between the wafer cassette and the chamber.

依照本發明的一實施例所述，在上述膜厚量測系統中，第一測距裝置與第二測距裝置例如是光學測距裝置。According to an embodiment of the present invention, in the above-mentioned film thickness measurement system, the first distance measurement device and the second distance measurement device are, for example, optical distance measurement devices.

依照本發明的一實施例所述，在上述膜厚量測系統中，光學測距裝置例如是雷射測距裝置。According to an embodiment of the present invention, in the above-mentioned film thickness measurement system, the optical distance measuring device is, for example, a laser distance measuring device.

本發明提出一種膜厚量測方法，包括以下步驟。提供製程機台。提供互相面對的至少一個第一測距裝置與至少一個第二測距裝置。獲得第一測距裝置與第二測距裝置之間的第一距離。在將晶圓結構送入製程機台的腔室之前，獲得晶圓結構的初始厚度。晶圓結構具有彼此相對的第一面與第二面。將晶圓結構送入製程機台的腔室中，且對晶圓結構的第一面進行製程處理。在將晶圓結構移出製程機台的腔室之後，使用第一測距裝置量測第一測距裝置與位在晶圓結構的第一面的不透光層之間的第二距離。在將晶圓結構移出製程機台的腔室之後，使用第二測距裝置量測第二測距裝置與晶圓結構的第二面之間的第三距離。將第一距離減去第二距離、第三距離與晶圓結構的初始厚度，而獲得不透光層的厚度變動值。The present invention provides a method for measuring film thickness, which includes the following steps. Provide process machines. At least one first distance measuring device and at least one second distance measuring device facing each other are provided. Obtain the first distance between the first distance measuring device and the second distance measuring device. Before the wafer structure is fed into the chamber of the process tool, the initial thickness of the wafer structure is obtained. The wafer structure has a first surface and a second surface opposite to each other. The wafer structure is fed into the chamber of the process tool, and the first side of the wafer structure is processed. After the wafer structure is moved out of the chamber of the process tool, the first distance measuring device is used to measure the second distance between the first distance measuring device and the opaque layer located on the first surface of the wafer structure. After the wafer structure is moved out of the chamber of the process tool, the second distance measuring device is used to measure the third distance between the second distance measuring device and the second surface of the wafer structure. The first distance is subtracted from the second distance, the third distance, and the initial thickness of the wafer structure to obtain the thickness variation value of the opaque layer.

依照本發明的一實施例所述，在上述膜厚量測方法中，製程處理例如是沉積製程、蝕刻製程、研磨製程或清洗製程。According to an embodiment of the present invention, in the above-mentioned film thickness measurement method, the process treatment is, for example, a deposition process, an etching process, a polishing process, or a cleaning process.

依照本發明的一實施例所述，在上述膜厚量測方法中，當厚度變動值為正值，則厚度變動值表示不透光層的厚度增加值。當厚度變動值為負值，則厚度變動值表示不透光層的厚度減少值。當厚度變動值為0，則表示不透光層的厚度不變。According to an embodiment of the present invention, in the above-mentioned film thickness measurement method, when the thickness variation value is a positive value, the thickness variation value represents the increased value of the thickness of the opaque layer. When the thickness variation value is a negative value, the thickness variation value represents the thickness reduction value of the opaque layer. When the thickness variation value is 0, it means that the thickness of the opaque layer does not change.

依照本發明的一實施例所述，在上述膜厚量測方法中，第一距離的量測方法例如是使用第一測距裝置或第二測距裝置進行量測。According to an embodiment of the present invention, in the above-mentioned film thickness measurement method, the first distance measurement method is, for example, using the first distance measuring device or the second distance measuring device for measurement.

依照本發明的一實施例所述，在上述膜厚量測方法中，晶圓結構的初始厚度的量測方法可包括以下步驟。使用第一測距裝置量測第一測距裝置與晶圓結構的第一面之間的第四距離。使用第二測距裝置量測第二測距裝置與晶圓結構的第二面之間的第五距離。將第一距離減去第四距離與第五距離，而獲得晶圓結構的初始厚度。According to an embodiment of the present invention, in the above-mentioned film thickness measurement method, the measurement method of the initial thickness of the wafer structure may include the following steps. The first distance measuring device is used to measure the fourth distance between the first distance measuring device and the first surface of the wafer structure. The second distance measuring device is used to measure the fifth distance between the second distance measuring device and the second surface of the wafer structure. The first distance is subtracted from the fourth distance and the fifth distance to obtain the initial thickness of the wafer structure.

依照本發明的一實施例所述，在上述膜厚量測方法中，製程機台可包括腔室與連接至腔室的傳輸路徑。第一測距裝置與第二測距裝置可設置在傳輸路徑上。在第一測距裝置與第二測距裝置之間可具有量測區。第一距離、晶圓結構的初始厚度、第二距離與第三距離可在量測區中進行量測。According to an embodiment of the present invention, in the above-mentioned film thickness measurement method, the process tool may include a chamber and a transmission path connected to the chamber. The first distance measuring device and the second distance measuring device may be arranged on the transmission path. There may be a measuring area between the first distance measuring device and the second distance measuring device. The first distance, the initial thickness of the wafer structure, the second distance, and the third distance can be measured in the measurement area.

基於上述，本發明所提出的膜厚量測系統與膜厚量測方法可藉由第一測距裝置與第二測距裝置來量測晶圓結構的不透光層的厚度變動值，進而反映出產品薄膜的真實厚度。另外，本發明所提出的膜厚量測系統與膜厚量測方法可即時性地對進出製程機台的每個晶圓結構進行膜厚量測。此外，在本發明所提出的膜厚量測方法中，藉由將第一距離減去第二距離、第三距離與晶圓結構的初始厚度，而獲得不透光層的厚度變動值，因此即使晶圓結構產生形變也不會影響量測結果。Based on the above, the film thickness measurement system and the film thickness measurement method proposed by the present invention can measure the thickness variation value of the opaque layer of the wafer structure through the first distance measuring device and the second distance measuring device, and then Reflect the true thickness of the product film. In addition, the film thickness measurement system and the film thickness measurement method proposed by the present invention can instantly measure the film thickness of each wafer structure entering and leaving the process tool. In addition, in the film thickness measurement method proposed by the present invention, the thickness variation value of the opaque layer is obtained by subtracting the second distance, the third distance, and the initial thickness of the wafer structure from the first distance. Even if the wafer structure is deformed, it will not affect the measurement results.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

圖1A為本發明一實施例的膜厚量測系統的示意圖。圖1B為圖1A中的測距裝置的示意圖。圖1C為圖1A中的測距裝置的上視圖。FIG. 1A is a schematic diagram of a film thickness measurement system according to an embodiment of the invention. Fig. 1B is a schematic diagram of the distance measuring device in Fig. 1A. Fig. 1C is a top view of the distance measuring device in Fig. 1A.

請參照圖1A至圖1C，膜厚量測系統10包括製程機台100、至少一個測距裝置102與至少一個測距裝置104，且更可包括晶圓盒106。製程機台100包括腔室100a與連接至腔室100a的傳輸路徑100b。製程機台100可為沉積機台、蝕刻機台、研磨機台(如，化學機械研磨機台)或清洗機台，但本發明並不以此為限。此外，傳輸路徑100b可位在晶圓盒106與腔室100a之間。1A to 1C, the film thickness measurement system 10 includes a process tool 100, at least one ranging device 102, and at least one ranging device 104, and may further include a wafer cassette 106. The process tool 100 includes a chamber 100a and a transmission path 100b connected to the chamber 100a. The process machine 100 can be a deposition machine, an etching machine, a polishing machine (for example, a chemical mechanical polishing machine), or a cleaning machine, but the present invention is not limited to this. In addition, the transfer path 100b may be located between the wafer cassette 106 and the chamber 100a.

測距裝置102與測距裝置104互相面對且設置在傳輸路徑100b上。在測距裝置102與測距裝置104之間具有量測區R。晶圓結構W可在量測區R中進行膜厚量測。測距裝置102與測距裝置104所量測的資料可上傳遠端製程控制系統並計算出不透光層的膜厚變動值或者可由製程機台100收集上述資料並計算出不透光層的膜厚變動值。The distance measuring device 102 and the distance measuring device 104 face each other and are arranged on the transmission path 100b. There is a measuring area R between the distance measuring device 102 and the distance measuring device 104. The film thickness of the wafer structure W can be measured in the measurement area R. The data measured by the distance measuring device 102 and the distance measuring device 104 can be uploaded to the remote process control system to calculate the change in film thickness of the opaque layer, or the process tool 100 can collect the above data and calculate the thickness of the opaque layer. Change in film thickness.

測距裝置102與測距裝置104例如是光學測距裝置。光學測距裝置例如是雷射測距裝置。在測距裝置102與測距裝置104為光學測距裝置的實施例中，測距裝置102與測距裝置104分別可包括光源108a與光感測器108b(圖1B)。光源108a例如是雷射光源。光感測器108b例如是電荷耦合元件(charge coupled device，CCD)或互補式金屬氧化物半導體(complementary metal oxide semiconductor，CMOS)。光源108a可發射光至晶圓結構W的不透光層，且光感測器108b可接收從不透光層反射的光。The distance measuring device 102 and the distance measuring device 104 are, for example, optical distance measuring devices. The optical distance measuring device is, for example, a laser distance measuring device. In the embodiment where the distance measuring device 102 and the distance measuring device 104 are optical distance measuring devices, the distance measuring device 102 and the distance measuring device 104 may respectively include a light source 108a and a light sensor 108b (FIG. 1B). The light source 108a is, for example, a laser light source. The light sensor 108b is, for example, a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS). The light source 108a can emit light to the opaque layer of the wafer structure W, and the light sensor 108b can receive the light reflected from the opaque layer.

測距裝置102的數量與測距裝置104的數量可分別為一個或多個。此外，測距裝置102的數量與測距裝置104的數量可為相同。在本實施例中，如圖1A與圖1C所示，測距裝置102的數量與測距裝置104的數量是以多個為例來進行說明，但本發明並不以此為限。只要測距裝置102的數量與測距裝置104的數量為至少一個即屬於本發明所保護的範圍。在測距裝置102的數量與測距裝置104的數量為多個的情況下，可在晶圓結構W的多個位置上量測出不透光層的厚度變動值，藉此可得知不透光層的膜厚均勻性。The number of distance measuring devices 102 and the number of distance measuring devices 104 may be one or more, respectively. In addition, the number of distance measuring devices 102 and the number of distance measuring devices 104 may be the same. In this embodiment, as shown in FIG. 1A and FIG. 1C, the number of distance measuring devices 102 and the number of distance measuring devices 104 are described as an example, but the present invention is not limited to this. As long as the number of distance measuring devices 102 and the number of distance measuring devices 104 are at least one, it belongs to the protection scope of the present invention. In the case that the number of distance measuring devices 102 and the number of distance measuring devices 104 are multiple, the thickness variation value of the opaque layer can be measured at multiple positions of the wafer structure W, so as to know whether The uniformity of the film thickness of the light-transmitting layer.

基於上述實施例可知，膜厚量測系統10可藉由測距裝置102與測距裝置104來量測晶圓結構W的不透光層的厚度變動值，進而反映出產品薄膜的真實厚度。另外，在膜厚量測系統10中，測距裝置102與測距裝置104設置在傳輸路徑100b上，因此可即時性地對進出製程機台100的每個晶圓結構W進行膜厚量測。Based on the above-mentioned embodiments, the film thickness measurement system 10 can measure the thickness variation of the opaque layer of the wafer structure W through the distance measuring device 102 and the distance measuring device 104, thereby reflecting the true thickness of the product film. In addition, in the film thickness measurement system 10, the distance measurement device 102 and the distance measurement device 104 are arranged on the transmission path 100b, so that the film thickness measurement of each wafer structure W entering and exiting the process tool 100 can be performed in real time. .

圖2為本發明一實施例的膜厚量測方法的流程圖。圖3A為本發明一實施例的晶圓結構在送入製程機台的腔室之前的示意圖。圖3B為本發明一實施例的晶圓結構在移出製程機台的腔室之後的示意圖。FIG. 2 is a flowchart of a film thickness measurement method according to an embodiment of the present invention. 3A is a schematic diagram of a wafer structure before being fed into a chamber of a process tool according to an embodiment of the present invention. 3B is a schematic diagram of the wafer structure after being removed from the chamber of the process tool according to an embodiment of the present invention.

在本實施例中，膜厚量測方法是利用膜厚量測系統10來進行說明，但本發明並不以此為限。在一些實施例中，本實施例的膜厚量測方法亦可應用於其他膜厚量測系統中。此外，關於膜厚量測系統10中的各構件可參考圖1的實施例的說明，於此不再說明。In this embodiment, the film thickness measurement method is described by using the film thickness measurement system 10, but the present invention is not limited to this. In some embodiments, the film thickness measurement method of this embodiment can also be applied to other film thickness measurement systems. In addition, for the various components in the film thickness measurement system 10, reference may be made to the description of the embodiment in FIG. 1, which will not be described here.

請參照圖1、圖2、圖3A與圖3B，進行步驟S100，提供製程機台100。製程機台100可包括腔室100a與連接至腔室100a的傳輸路徑100b。製程機台100可為沉積機台、蝕刻機台、研磨機台(如，化學機械研磨機台)或清洗機台。在本實施例中，製程機台100是以沉積機台為例來進行說明。Please refer to FIG. 1, FIG. 2, FIG. 3A, and FIG. 3B, and proceed to step S100 to provide a process tool 100. The process tool 100 may include a chamber 100a and a transmission path 100b connected to the chamber 100a. The process machine 100 can be a deposition machine, an etching machine, a polishing machine (for example, a chemical mechanical polishing machine), or a cleaning machine. In this embodiment, the process tool 100 is described with a deposition tool as an example.

進行步驟S102，提供互相面對的至少一個測距裝置102與至少一個測距裝置104。測距裝置102與測距裝置104可設置在傳輸路徑100b上。在測距裝置102與測距裝置104之間可具有量測區R。Step S102 is performed to provide at least one ranging device 102 and at least one ranging device 104 facing each other. The distance measuring device 102 and the distance measuring device 104 may be arranged on the transmission path 100b. There may be a measuring area R between the distance measuring device 102 and the distance measuring device 104.

進行步驟S104，獲得測距裝置102與測距裝置104之間的距離Ds(如圖3A所示)。距離Ds的量測方法例如是使用測距裝置102或測距裝置104進行量測，但本發明並不以此限。Step S104 is performed to obtain the distance Ds between the distance measuring device 102 and the distance measuring device 104 (as shown in FIG. 3A). The measuring method of the distance Ds is, for example, using the distance measuring device 102 or the distance measuring device 104 for measurement, but the present invention is not limited to this.

進行步驟S106，在將晶圓結構W送入製程機台100的腔室100a之前，獲得晶圓結構W的初始厚度Tw。晶圓結構W可僅包括晶圓本身或是包括晶圓與位在晶圓上的膜層。晶圓結構W具有彼此相對的第一面S1與第二面S2。第一面S1與第二面S2可分別為晶圓結構W的正面與背面中的一者與另一者。Step S106 is performed to obtain the initial thickness Tw of the wafer structure W before the wafer structure W is sent into the chamber 100 a of the process tool 100. The wafer structure W may only include the wafer itself or include the wafer and the film layer located on the wafer. The wafer structure W has a first surface S1 and a second surface S2 opposite to each other. The first surface S1 and the second surface S2 may be one and the other of the front surface and the back surface of the wafer structure W, respectively.

晶圓結構W的初始厚度Tw的量測方法可包括以下步驟，但本發明並不以此為限。如圖3A所示，當晶圓結構W進入量測區R時，使用測距裝置102量測測距裝置102與晶圓結構W的第一面S1之間的距離D1f，且使用測距裝置104量測測距裝置104與晶圓結構W的第二面S2之間的距離D1b。將距離Ds減去距離D1f與距離D1b，而獲得晶圓結構W的初始厚度Tw(如下式(1)所示)。 Tw = Ds – D1f – D1b   式(1)The method for measuring the initial thickness Tw of the wafer structure W may include the following steps, but the invention is not limited thereto. As shown in FIG. 3A, when the wafer structure W enters the measurement area R, the distance measuring device 102 is used to measure the distance D1f between the distance measuring device 102 and the first surface S1 of the wafer structure W, and the distance measuring device is used 104 measures the distance D1b between the distance measuring device 104 and the second surface S2 of the wafer structure W. The distance Ds is subtracted from the distance D1f and the distance D1b to obtain the initial thickness Tw of the wafer structure W (as shown in the following formula (1)). Tw = Ds – D1f – D1b Equation (1)

進行步驟S108，將晶圓結構W送入製程機台100的腔室100a中，且對晶圓結構W的第一面S1進行製程處理。製程處理例如是沉積製程、蝕刻製程、研磨製程(如，化學機械研磨製程)或清洗製程。在本實施例中，上述製程處理是以進行沉積製程為例來進行說明。如圖3B所示，可藉由沉積製程在晶圓結構W上形成不透光層200。不透光層200例如是金屬層。金屬層的材料例如是鋁、銅或鎢。In step S108, the wafer structure W is sent into the chamber 100a of the process tool 100, and the first surface S1 of the wafer structure W is processed. The process treatment is, for example, a deposition process, an etching process, a polishing process (for example, a chemical mechanical polishing process), or a cleaning process. In this embodiment, the above-mentioned process is described by taking the deposition process as an example. As shown in FIG. 3B, the opaque layer 200 can be formed on the wafer structure W by a deposition process. The opaque layer 200 is, for example, a metal layer. The material of the metal layer is, for example, aluminum, copper, or tungsten.

進行步驟S110，在將晶圓結構W移出製程機台100的腔室100a之後，使用測距裝置102量測測距裝置102與位在晶圓結構W的第一面S1的不透光層200之間的距離D2f(如圖3B所示)。In step S110, after the wafer structure W is removed from the chamber 100a of the process tool 100, the distance measuring device 102 is used to measure the distance measuring device 102 and the opaque layer 200 located on the first surface S1 of the wafer structure W The distance between D2f (as shown in Figure 3B).

進行步驟S112，在將晶圓結構W移出製程機台100的腔室100a之後，使用測距裝置104量測測距裝置104與晶圓結構W的第二面S2之間的距離D2b(如圖3B所示)。In step S112, after the wafer structure W is moved out of the chamber 100a of the process tool 100, the distance measuring device 104 is used to measure the distance D2b between the distance measuring device 104 and the second surface S2 of the wafer structure W (as shown in FIG. Shown in 3B).

此外，距離Ds、晶圓結構W的初始厚度Tw、距離D2f與距離D2b可在量測區R中進行量測。In addition, the distance Ds, the initial thickness Tw of the wafer structure W, the distance D2f, and the distance D2b can be measured in the measurement area R.

進行步驟S114，將距離Ds減去距離D2f、距離D2b與晶圓結構W的初始厚度Tw，而獲得不透光層200的厚度變動值ΔT(如下式(2)所示)。 ΔT = Ds – D2f – D2b – Tw   式(2)Step S114 is performed to subtract the distance D2f, the distance D2b, and the initial thickness Tw of the wafer structure W from the distance Ds to obtain the thickness variation value ΔT of the opaque layer 200 (as shown in the following formula (2)). ΔT = Ds – D2f – D2b – Tw Equation (2)

當厚度變動值ΔT為正值，則厚度變動值ΔT表示不透光層200的厚度增加值。當厚度變動值ΔT為負值，則厚度變動值ΔT表示不透光層200的厚度減少值。當厚度變動值ΔT為0，表示不透光層200的厚度不變。When the thickness variation value ΔT is a positive value, the thickness variation value ΔT represents the thickness increase value of the opaque layer 200. When the thickness variation value ΔT is a negative value, the thickness variation value ΔT represents the thickness reduction value of the opaque layer 200. When the thickness variation value ΔT is 0, it means that the thickness of the opaque layer 200 does not change.

在本實施例中，由於是對晶圓結構W進行沉積製程，因此厚度變動值ΔT可為正值，且厚度變動值ΔT表示由沉積製程所形成的不透光層200的厚度。在其他實施例中，在對晶圓結構W進行蝕刻製程或研磨製程的情況下，厚度變動值ΔT可為負值，且厚度變動值ΔT表示由蝕刻製程或研磨製程所移除的不透光層200的厚度。在其他實施例中，在對晶圓結構W進行清洗製程的情況下，厚度變動值ΔT可為0，表示清洗製程並未對不透光層200的厚度造成影響。In this embodiment, since the deposition process is performed on the wafer structure W, the thickness variation value ΔT may be a positive value, and the thickness variation value ΔT represents the thickness of the opaque layer 200 formed by the deposition process. In other embodiments, when the wafer structure W is subjected to an etching process or a polishing process, the thickness variation value ΔT may be a negative value, and the thickness variation value ΔT represents the opacity removed by the etching process or the polishing process The thickness of layer 200. In other embodiments, when a cleaning process is performed on the wafer structure W, the thickness variation value ΔT may be 0, which means that the cleaning process does not affect the thickness of the opaque layer 200.

基於上述實施例可知，上述膜厚量測方法可藉由測距裝置102與測距裝置104來量測晶圓結構W的不透光層200的厚度變動值ΔT，進而反映出產品薄膜的真實厚度。另外，上述實施例的膜厚量測方法可即時性地對進出製程機台100的每個晶圓結構W進行膜厚量測。如此一來，當不透光層200的厚度產生輕微的偏差時，可藉由製程機台100進行自動調整。當不透光層200的厚度產生嚴重異常時，可直接停止製程機台100的運作，待原因解決再重啟製程。此外，在上述實施例的膜厚量測方法中，藉由將距離Ds減去距離D2f、距離D2b與晶圓結構W的初始厚度Tw，而獲得不透光層200的厚度變動值ΔT，因此即使晶圓結構W產生形變也不會影響量測結果。Based on the above embodiments, it can be seen that the above film thickness measurement method can measure the thickness variation ΔT of the opaque layer 200 of the wafer structure W through the distance measuring device 102 and the distance measuring device 104, thereby reflecting the true quality of the product film. thickness. In addition, the film thickness measurement method of the above embodiment can measure the film thickness of each wafer structure W entering and leaving the process tool 100 in real time. In this way, when the thickness of the opaque layer 200 has a slight deviation, it can be automatically adjusted by the process tool 100. When a serious abnormality occurs in the thickness of the opaque layer 200, the operation of the process tool 100 can be directly stopped, and the process can be restarted after the cause is resolved. In addition, in the film thickness measurement method of the above embodiment, the thickness variation value ΔT of the opaque layer 200 is obtained by subtracting the distance D2f, the distance D2b, and the initial thickness Tw of the wafer structure W from the distance Ds. Therefore, Even if the wafer structure W is deformed, it will not affect the measurement result.

圖4A為本發明另一實施例的晶圓結構在送入製程機台的腔室之前的示意圖。圖4B為本發明另一實施例的晶圓結構在移出製程機台的腔室之後的示意圖。4A is a schematic diagram of a wafer structure before being fed into a chamber of a process tool according to another embodiment of the present invention. 4B is a schematic diagram of the wafer structure after being removed from the chamber of the process tool according to another embodiment of the present invention.

以下，藉由圖4A與圖4B來說明厚度變動值ΔT為負數的實施例。在圖4A與圖4B中，與圖3A與圖3B相同或相似的構件以相同的符號表示，且省略其說明。Hereinafter, an embodiment in which the thickness variation value ΔT is a negative number will be described with reference to FIGS. 4A and 4B. In FIGS. 4A and 4B, components that are the same as or similar to those in FIGS. 3A and 3B are denoted by the same symbols, and their description is omitted.

在本實施例中，對晶圓結構W的第一面S1所進行的製程處理是以進行蝕刻製程或研磨製程為例來進行說明。In this embodiment, the process processing performed on the first surface S1 of the wafer structure W is described by taking an etching process or a polishing process as an example.

請參照圖1與圖4A，在將晶圓結構W送入製程機台100的腔室100a進行蝕刻製程或研磨製程之前，可藉由上述式(1)獲得晶圓結構W的初始厚度Tw。在本實施例中，晶圓結構W可包括晶圓結構W1與不透光層202。亦即，晶圓結構W的初始厚度Tw為晶圓結構W1的厚度與不透光層202的厚度的總和。晶圓結構W1可僅包括晶圓本身或是包括晶圓與位在晶圓上的膜層。不透光層202例如是金屬層。金屬層的材料例如是鋁、銅或鎢。1 and 4A, before the wafer structure W is sent into the chamber 100a of the process tool 100 for an etching process or a grinding process, the initial thickness Tw of the wafer structure W can be obtained by the above formula (1). In this embodiment, the wafer structure W may include a wafer structure W1 and an opaque layer 202. That is, the initial thickness Tw of the wafer structure W is the sum of the thickness of the wafer structure W1 and the thickness of the opaque layer 202. The wafer structure W1 may only include the wafer itself or include the wafer and the film layer located on the wafer. The opaque layer 202 is, for example, a metal layer. The material of the metal layer is, for example, aluminum, copper, or tungsten.

請參照圖4B，在對晶圓結構W的第一面S1進行蝕刻製程或研磨製程之後，可藉由上述式(2)獲得不透光層202的厚度變動值ΔT。在本實施例中，由於是對晶圓結構W進行蝕刻製程或研磨製程，因此厚度變動值ΔT為負值，且厚度變動值ΔT表示由蝕刻製程或研磨製程所移除的不透光層202的厚度。Referring to FIG. 4B, after the etching process or the polishing process is performed on the first surface S1 of the wafer structure W, the thickness variation value ΔT of the opaque layer 202 can be obtained by the above formula (2). In this embodiment, since the wafer structure W is subjected to an etching process or a polishing process, the thickness variation value ΔT is a negative value, and the thickness variation value ΔT represents the opaque layer 202 removed by the etching process or the polishing process thickness of.

綜上所述，上述實施例的膜厚量測系統及膜厚量測方法可藉由距離來量測晶圓結構的不透光層的厚度變動值，進而反映出產品薄膜的真實厚度。In summary, the film thickness measurement system and film thickness measurement method of the above embodiments can measure the thickness variation of the opaque layer of the wafer structure by distance, and then reflect the true thickness of the product film.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be subject to those defined by the attached patent application scope.

10:膜厚量測系統 100:製程機台 100a:腔室 100b:傳輸路徑 102、104:測距裝置 106:晶圓盒 108a:光源 108b:光感測器 200、202:不透光層 Ds、D1f、D1b、D2f、D2b:距離 R:量測區 S1:第一面 S2:第二面 S100、S102、S104、S106、S108、S110、S112、S114:步驟 Tw:初始厚度 W、W1:晶圓結構 ΔT:厚度變動值10: Film thickness measurement system 100: Process machine 100a: Chamber 100b: Transmission path 102, 104: Ranging device 106: Wafer Box 108a: light source 108b: light sensor 200, 202: opaque layer Ds, D1f, D1b, D2f, D2b: distance R: Measuring area S1: First side S2: Second side S100, S102, S104, S106, S108, S110, S112, S114: steps Tw: initial thickness W, W1: Wafer structure ΔT: thickness variation value

圖1A為本發明一實施例的膜厚量測系統的示意圖。 圖1B為圖1A中的測距裝置的示意圖。 圖1C為圖1A中的測距裝置的上視圖。 圖2為本發明一實施例的膜厚量測方法的流程圖。 圖3A為本發明一實施例的晶圓結構在送入製程機台的腔室之前的示意圖。 圖3B為本發明一實施例的晶圓結構在移出製程機台的腔室之後的示意圖。 圖4A為本發明另一實施例的晶圓結構在送入製程機台的腔室之前的示意圖。 圖4B為本發明另一實施例的晶圓結構在移出製程機台的腔室之後的示意圖。FIG. 1A is a schematic diagram of a film thickness measurement system according to an embodiment of the invention. Fig. 1B is a schematic diagram of the distance measuring device in Fig. 1A. Fig. 1C is a top view of the distance measuring device in Fig. 1A. FIG. 2 is a flowchart of a film thickness measurement method according to an embodiment of the present invention. 3A is a schematic diagram of a wafer structure before being fed into a chamber of a process tool according to an embodiment of the present invention. 3B is a schematic diagram of the wafer structure after being removed from the chamber of the process tool according to an embodiment of the present invention. 4A is a schematic diagram of a wafer structure before being fed into a chamber of a process tool according to another embodiment of the present invention. 4B is a schematic diagram of the wafer structure after being removed from the chamber of the process tool according to another embodiment of the present invention.

10:膜厚量測系統 10: Film thickness measurement system

100:製程機台 100: Process machine

100a:腔室 100a: Chamber

100b:傳輸路徑 100b: Transmission path

102、104:測距裝置 102, 104: Ranging device

106:晶圓盒 106: Wafer Box

R:量測區 R: Measuring area

W:晶圓結構 W: Wafer structure

Claims (8)

一種膜厚量測系統，包括：製程機台，包括腔室與連接至所述腔室的傳輸路徑；至少一個第一測距裝置與至少一個第二測距裝置，互相面對且設置在所述傳輸路徑上，其中在所述至少一個第一測距裝置與所述至少一個第二測距裝置之間具有量測區，且所述至少一個第一測距裝置的數量與所述至少一個第二測距裝置的數量為多個；以及晶圓盒，其中所述傳輸路徑連接於所述晶圓盒的開口與所述腔室的開口之間，且所述晶圓盒的開口與所述腔室的開口之間的最短假想連線通過所述量測區。 A film thickness measurement system includes: a process machine including a chamber and a transmission path connected to the chamber; at least one first distance measuring device and at least one second distance measuring device face each other and are arranged at all On the transmission path, there is a measurement area between the at least one first ranging device and the at least one second ranging device, and the number of the at least one first ranging device is equal to the number of the at least one The number of the second distance measuring device is multiple; and a wafer cassette, wherein the transmission path is connected between the opening of the wafer cassette and the opening of the chamber, and the opening of the wafer cassette is connected to the opening of the chamber. The shortest imaginary line between the openings of the chamber passes through the measurement area. 如申請專利範圍第1項所述的膜厚量測系統，其中所述至少一個第一測距裝置與所述至少一個第二測距裝置包括光學測距裝置。 The film thickness measurement system according to claim 1, wherein the at least one first distance measurement device and the at least one second distance measurement device comprise optical distance measurement devices. 如申請專利範圍第2項所述的膜厚量測系統，其中所述光學測距裝置包括雷射測距裝置。 The film thickness measurement system described in item 2 of the scope of patent application, wherein the optical distance measurement device includes a laser distance measurement device. 一種膜厚量測方法，包括：提供製程機台；提供互相面對的至少一個第一測距裝置與至少一個第二測距裝置，其中所述至少一個第一測距裝置的數量與所述至少一個第二測距裝置的數量為多個；獲得所述至少一個第一測距裝置與所述至少一個第二測距裝 置之間的第一距離；在將晶圓結構送入所述製程機台的腔室之前，獲得所述晶圓結構的初始厚度，其中所述晶圓結構具有彼此相對的第一面與第二面；將所述晶圓結構送入所述製程機台的所述腔室中，且對所述晶圓結構的所述第一面進行製程處理；在將所述晶圓結構移出所述製程機台的所述腔室之後，使用所述至少一個第一測距裝置量測所述至少一個第一測距裝置與位在所述晶圓結構的所述第一面的不透光層之間的第二距離；在將所述晶圓結構移出所述製程機台的所述腔室之後，使用所述至少一個第二測距裝置量測所述至少一個第二測距裝置與所述晶圓結構的所述第二面之間的第三距離；以及將所述第一距離減去所述第二距離、所述第三距離與所述晶圓結構的所述初始厚度，而獲得所述不透光層的厚度變動值，其中所述製程機台包括所述腔室與連接至所述腔室的傳輸路徑，所述至少一個第一測距裝置與所述至少一個第二測距裝置設置在所述傳輸路徑上，在所述至少一個第一測距裝置與所述至少一個第二測距裝置之間具有量測區，所述傳輸路徑連接於晶圓盒的開口與所述腔室的開口之間，且所述晶圓盒的開口與所述腔室的開口之間的最短假想連線通過 所述量測區，且所述第一距離、所述晶圓結構的所述初始厚度、所述第二距離與所述第三距離在所述量測區中進行量測。 A method for measuring film thickness includes: providing a process machine; providing at least one first ranging device and at least one second ranging device facing each other, wherein the number of the at least one first ranging device is equal to the number of the The number of at least one second ranging device is multiple; the at least one first ranging device and the at least one second ranging device are obtained The first distance between the set; before the wafer structure is sent into the chamber of the process tool, the initial thickness of the wafer structure is obtained, wherein the wafer structure has a first surface and a first surface opposite to each other Two sides; send the wafer structure into the chamber of the process tool, and process the first side of the wafer structure; move the wafer structure out of the After the chamber of the process tool, the at least one first distance measuring device is used to measure the at least one first distance measuring device and the opaque layer located on the first surface of the wafer structure After the wafer structure is moved out of the chamber of the process tool, the at least one second distance measuring device is used to measure the at least one second distance measuring device and the A third distance between the second surfaces of the wafer structure; and subtracting the second distance, the third distance, and the initial thickness of the wafer structure from the first distance, and Obtain the thickness variation value of the opaque layer, wherein the process tool includes the chamber and a transmission path connected to the chamber, the at least one first distance measuring device and the at least one second distance measuring device The distance measuring device is arranged on the transmission path, there is a measuring area between the at least one first distance measuring device and the at least one second distance measuring device, and the transmission path is connected to the opening of the wafer cassette and The shortest imaginary line between the openings of the chamber and between the opening of the wafer cassette and the opening of the chamber passes through The measurement area, the first distance, the initial thickness of the wafer structure, the second distance, and the third distance are measured in the measurement area. 如申請專利範圍第4項所述的膜厚量測方法，其中所述製程處理包括沉積製程、蝕刻製程、研磨製程或清洗製程。 According to the method for measuring film thickness described in item 4 of the scope of patent application, the process treatment includes a deposition process, an etching process, a polishing process, or a cleaning process. 如申請專利範圍第4項所述的膜厚量測方法，其中當所述厚度變動值為正值，則所述厚度變動值表示所述不透光層的厚度增加值，當所述厚度變動值為負值，則所述厚度變動值表示所述不透光層的厚度減少值，且當所述厚度變動值為0，則表示所述不透光層的厚度不變。 For the film thickness measurement method described in item 4 of the scope of patent application, when the thickness variation value is positive, the thickness variation value represents the thickness increase value of the opaque layer, and when the thickness variation If the value is a negative value, the thickness variation value represents the thickness reduction value of the opaque layer, and when the thickness variation value is 0, it represents that the thickness of the opaque layer does not change. 如申請專利範圍第4項所述的膜厚量測方法，其中所述第一距離的量測方法包括使用所述至少一個第一測距裝置或所述至少一個第二測距裝置進行量測。 The film thickness measurement method according to claim 4, wherein the measurement method of the first distance includes measuring using the at least one first distance measuring device or the at least one second distance measuring device . 如申請專利範圍第4項所述的膜厚量測方法，其中所述晶圓結構的所述初始厚度的量測方法包括：使用所述至少一個第一測距裝置量測所述至少一個第一測距裝置與所述晶圓結構的所述第一面之間的第四距離；使用所述至少一個第二測距裝置量測所述至少一個第二測距裝置與所述晶圓結構的所述第二面之間的第五距離；以及將所述第一距離減去所述第四距離與所述第五距離，而獲得所述晶圓結構的所述初始厚度。 The film thickness measurement method according to claim 4, wherein the measurement method of the initial thickness of the wafer structure includes: measuring the at least one first distance measuring device using the at least one first distance measuring device A fourth distance between a distance measuring device and the first surface of the wafer structure; using the at least one second distance measuring device to measure the at least one second distance measuring device and the wafer structure The fifth distance between the second surfaces of the; and the first distance is subtracted from the fourth distance and the fifth distance to obtain the initial thickness of the wafer structure.
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US7130029B2 (en) * 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
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