TWI735912B - Plasma system, plasma tool, radio frequency generator, controller, and methods for sub-pulsing during a state - Google Patents

Plasma system, plasma tool, radio frequency generator, controller, and methods for sub-pulsing during a state Download PDF

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TWI735912B
TWI735912B TW108124594A TW108124594A TWI735912B TW I735912 B TWI735912 B TW I735912B TW 108124594 A TW108124594 A TW 108124594A TW 108124594 A TW108124594 A TW 108124594A TW I735912 B TWI735912 B TW I735912B
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state
signal
states
power level
during
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TW201941254A (en
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小約翰 Ｃ 微寇爾
哈密特 席恩
布萊佛 Ｊ 琳戴克
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美商蘭姆研究公司
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Abstract

A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal.

Description

在一狀態期間中的次脈動用之電漿系統、電漿工具、射頻 產生器、控制器、及方法 Plasma system, plasma tool, radio frequency for sub-pulsation during a state period Generator, controller, and method

本發明實施例係關於在射頻(RF)產生器的一狀態期間產生複數次脈動。 The embodiment of the present invention relates to generating multiple pulsations during a state of a radio frequency (RF) generator.

電漿室係用以進行各種製程，如蝕刻、沉積等。例如，當將能量供給至電漿室時，便將氣體供應至電漿室。當氣體處於電漿室時同時供給能量，便會擊發電漿。電漿係用以蝕刻基板或清理電漿室。又，使用液體或氣體流入電漿室中，可將材料沉積至基板上。 The plasma chamber is used for various processes, such as etching and deposition. For example, when energy is supplied to the plasma chamber, gas is supplied to the plasma chamber. When the gas is in the plasma chamber and is supplied with energy, it will strike the plasma. The plasma is used to etch the substrate or clean the plasma chamber. In addition, using liquid or gas to flow into the plasma chamber, the material can be deposited on the substrate.

然而，控制製程是困難的。例如，基板上的材料可能會被過度蝕刻或蝕刻不足。又例如，沉積在基板上的複數膜層的厚度可能比期望厚度更厚或比期望厚度更薄。 However, it is difficult to control the manufacturing process. For example, the material on the substrate may be over-etched or under-etched. For another example, the thickness of the plurality of film layers deposited on the substrate may be thicker or thinner than the desired thickness.

本申請案中的實施例係於此背景下所產生。 The examples in this application are produced in this context.

本發明的實施例提供在一狀態期間內之次脈動用的設備、方法及電腦程式。應明白，可以各種方式如製程、設備、系統、裝置、或電腦可讀媒體上之方法實施本發明的實施例。下面說明數個實施例。 The embodiments of the present invention provide equipment, methods, and computer programs for secondary pulsation during a state period. It should be understood that the embodiments of the present invention can be implemented in various ways, such as processes, equipment, systems, devices, or methods on computer-readable media. Several embodiments are described below.

在某些實施例中，揭露一種在一狀態期間達成次脈動的方法。該方法包含自一時脈源接收一時脈訊號、並自該時脈訊號產生一脈動訊號，該時脈訊號具有兩狀態。該脈動訊號在該複數狀態之一狀態內具有複數次狀態。該複數次狀態在大於該些狀態之一頻率的一頻率下相對於彼此交替。該方法包含提供該脈動訊號以控制藉由一RF產生器所產生之一射頻(RF)訊號的一功率。該功率係受到控制以與該脈動訊號同步。 In some embodiments, a method for achieving sub-pulsation during a state is disclosed. The method includes receiving a clock signal from a clock source, and generating a pulse signal from the clock signal, the clock signal has two states. The pulsation signal has multiple states in one of the states. The multiple states alternate with respect to each other at a frequency greater than one of the states. The method includes providing the pulse signal to control a power of a radio frequency (RF) signal generated by an RF generator. The power is controlled to synchronize with the pulsation signal.

在各種實施例中，揭露一種RF產生器。該RF產生器包含一處理器。該處理器自一時脈源接收一時脈訊號。該時脈訊號具有兩狀態。該處理器自該時脈訊號產生一脈動訊號。該脈動訊號在該複數狀態之一狀態內具有複數次狀態。該複數次狀態具有大於該些狀態之一頻率的一頻率。該處理器提供該脈動訊號以控制一RF訊號的一功率。該功率受到控制以與該脈動訊號同步。該RF產生器包含耦合至該處理器之一RF電源。該RF電源產生具有該功率的該RF訊號，以藉由一阻抗匹配電路將該RF訊號提供至一電漿室。 In various embodiments, an RF generator is disclosed. The RF generator includes a processor. The processor receives a clock signal from a clock source. The clock signal has two states. The processor generates a pulse signal from the clock signal. The pulsation signal has multiple states in one of the states. The multiple states have a frequency greater than one of the states. The processor provides the pulsation signal to control a power of an RF signal. The power is controlled to synchronize with the pulsation signal. The RF generator includes an RF power supply coupled to the processor. The RF power source generates the RF signal with the power to provide the RF signal to a plasma chamber through an impedance matching circuit.

在各種實施例中，揭露一種電漿系統。該電漿系統包含一處理器，該處理器自一時脈源接收一時脈訊號。該時脈訊號具有兩狀態。該處理器自該時脈訊號產生一脈動訊號。該脈動訊號在該複數狀態之一狀態內具有複數次狀態且該複數次狀態具有大於該些狀態之一頻率的一頻率。該處理器提供一脈動訊號以控制一射頻(RF)訊號的一功率。該功率受到控制以與該脈動訊號同步。該電漿系統更包含用以產生具有該功率之該RF訊號的一RF電源。該電漿系統亦包含 耦合至該RF電源之一RF纜線。該電漿系統包含耦合至該RF電源的一阻抗匹配電路，該阻抗匹配電路係用以藉由該RF纜線接收該RF訊號。該阻抗匹配電路匹配耦合至該阻抗匹配電路之一負載的一阻抗與耦合至該阻抗匹配電路之一源的一阻抗，以自該RF訊號產生一經修改的RF訊號。該電漿系統包含耦合至該阻抗匹配電路的一電漿室，該電漿室係用以接收該經修改的RF訊號以改變一電漿的一阻抗。 In various embodiments, a plasma system is disclosed. The plasma system includes a processor that receives a clock signal from a clock source. The clock signal has two states. The processor generates a pulse signal from the clock signal. The pulsation signal has a plurality of states in a state of the plurality of states, and the plurality of states has a frequency greater than the frequency of one of the states. The processor provides a pulse signal to control a power of a radio frequency (RF) signal. The power is controlled to synchronize with the pulsation signal. The plasma system further includes an RF power source for generating the RF signal with the power. The plasma system also includes An RF cable coupled to the RF power source. The plasma system includes an impedance matching circuit coupled to the RF power source, and the impedance matching circuit is used to receive the RF signal through the RF cable. The impedance matching circuit matches an impedance coupled to a load of the impedance matching circuit and an impedance coupled to a source of the impedance matching circuit to generate a modified RF signal from the RF signal. The plasma system includes a plasma chamber coupled to the impedance matching circuit, and the plasma chamber is configured to receive the modified RF signal to change an impedance of a plasma.

上述實施例的某些優點方法在一狀態使用次脈動以在該狀態內產生複數次狀態。當該次脈動係受到低頻RF產生器(如2MHz RF產生器等)所用時，能粗略控制晶圓處理，晶圓例如是基板、其上沉積有一或多種材料之一或多層膜層的基板等。例如，相較於未被次脈動的RF訊號，當低頻RF產生器所產生之RF訊號在一狀態內被次脈動時，可更進一步粗略控制基板上的材料蝕刻或沉積。又，當次脈動係受到高頻RF產生器如60MHz RF產生器等所用時，能精細控制晶圓處理。例如，例如，相較於未被次脈動的RF訊號，當高頻RF產生器所產生之RF訊號在一狀態內被次脈動時，可更進一步細緻地控制基板上的材料蝕刻或沉積。應注意，在某些實施例中，細緻控制是為達到落在與粗略控制相關之速率範圍內的速率範圍。 Some of the advantages of the above-mentioned embodiment methods use sub-pulsations in a state to generate multiple states in that state. When the sub-pulsation is used by a low-frequency RF generator (such as a 2MHz RF generator, etc.), the wafer processing can be roughly controlled. The wafer is, for example, a substrate, a substrate on which one or more materials or multiple layers are deposited, etc. . For example, compared to an RF signal that is not sub-pulsed, when the RF signal generated by a low-frequency RF generator is sub-pulsed in a state, the etching or deposition of materials on the substrate can be further roughly controlled. In addition, when the sub-pulsation system is used by a high-frequency RF generator such as a 60MHz RF generator, the wafer processing can be finely controlled. For example, when the RF signal generated by the high-frequency RF generator is sub-pulsed in a state, compared to the RF signal that is not sub-pulsed, the etching or deposition of the material on the substrate can be further controlled in detail. It should be noted that in some embodiments, fine control is to achieve a rate range that falls within the rate range associated with coarse control.

由隨附之圖示及下列的詳細說明當可明白本發明的其他態樣。 Other aspects of the present invention can be understood from the accompanying drawings and the following detailed description.

100:RF產生器 100: RF generator

200:圖 200: figure

210:圖 210: figure

202:脈動訊號 202: pulsation signal

204:時脈訊號 204: Clock signal

212:RF訊號 212: RF signal

214:RF訊號 214: RF signal

220:圖 220: figure

222:脈動訊號 222: pulsation signal

230:圖 230: figure

232:脈動訊號 232: pulsation signal

240:圖 240: figure

242:脈動訊號 242: Pulse signal

300:系統 300: System

302:阻抗匹配電路 302: Impedance matching circuit

304:電漿室 304: Plasma Chamber

306:工具使用者界面(UI)系統 306: Tool User Interface (UI) System

307:工具UI系統 307: Tool UI System

308:RF纜線 308: RF cable

310:RF纜線 310: RF cable

312:RF傳輸線 312: RF transmission line

313:纜線 313: Cable

314:纜線 314: Cable

314:夾頭 314: Chuck

316:上電極 316: Upper electrode

318:晶圓 318: Wafer

320:上表面 320: upper surface

322:RF電源 322: RF power supply

324:RF電源 324: RF power supply

350:系統 350: System

400:圖 400: Figure

402:功率訊號 402: Power signal

404:經輸送之功率訊號 404: transmitted power signal

410:圖 410: figure

412:經輸送之功率訊號 412: transmitted power signal

420:圖 420: figure

422:經輸送之功率訊號 422: transmitted power signal

430:圖 430: figure

432:經輸送之功率訊號 432: transmitted power signal

440:圖 440: figure

442:脈動訊號 442: Heartbeat

500:圖 500: Figure

510:系統 510: System

600:圖 600: figure

602:RF訊號 602: RF signal

604:RF訊號 604: RF signal

610:圖 610: figure

620:圖 620: figure

622:脈動訊號 622: Heartbeat

700:系統 700: System

710:系統 710: System

800:圖 800: figure

802:訊號 802: Signal

812:RF訊號 812: RF signal

820:圖 820: figure

822:脈動訊號 822: pulsation signal

900:圖 900: Figure

910:系統 910: System

1000:圖 1000: Figure

1002:訊號 1002: Signal

1004:訊號 1004: Signal

1010:圖 1010: figure

1012:經輸送的功率訊號 1012: The transmitted power signal

1014:經輸送的功率訊號 1014: The transmitted power signal

1100:系統 1100: System

1104:處理邏輯 1104: processing logic

1110:系統 1110: system

1200:系統 1200: System

1202:開關 1202: switch

1300:DSP 1300: DSP

1302:內部時脈源 1302: internal clock source

1320:DSP 1320: DSP

1322:反相器 1322: inverter

1324:另一內部時脈源 1324: Another internal clock source

1326:處理邏輯 1326: processing logic

1328:加法器 1328: adder

1400:DSP 1400: DSP

AFTS0x:自動頻率調整器 AFTS0x: automatic frequency adjuster

AFTS0ax:自動頻率調整器 AFTS0ax: automatic frequency adjuster

AFTS0bx:自動頻率調整器 AFTS0bx: automatic frequency adjuster

AFTS0y:自動頻率調整器 AFTS0y: Automatic frequency adjuster

AFTS0ay:自動頻率調整器 AFTS0ay: automatic frequency adjuster

AFTS0by:自動頻率調整器 AFTS0by: automatic frequency adjuster

AFTS1x:自動頻率調整器 AFTS1x: automatic frequency adjuster

AFTS1ax:自動頻率調整器 AFTS1ax: automatic frequency adjuster

AFTS1bx:自動頻率調整器 AFTS1bx: automatic frequency adjuster

AFTS1y:自動頻率調整器 AFTS1y: automatic frequency adjuster

AFTS1ay:自動頻率調整器 AFTS1ay: automatic frequency adjuster

AFTS1by:自動頻率調整器 AFTS1by: automatic frequency adjuster

Clk:時脈訊號 Clk: clock signal

Clk1:訊號 Clk1: signal

DSPx:數位訊號處理器 DSPx: Digital Signal Processor

DSPy:數位訊號處理器 DSPy: Digital Signal Processor

PRS0a:參數控制器 PRS0a: parameter controller

PRS1a:參數控制器 PRS1a: parameter controller

PRS0b:參數控制器 PRS0b: parameter controller

PRS1b:參數控制器 PRS1b: parameter controller

PWRS0x:功率控制器 PWRS0x: power controller

PWRS0ax:功率控制器 PWRS0ax: power controller

PWRS0bx:功率控制器 PWRS0bx: Power controller

PWRS0y:功率控制器 PWRS0y: Power controller

PWRS0ay:功率控制器 PWRS0ay: power controller

PWRS0by:功率控制器 PWRS0by: power controller

PWRS1x:功率控制器 PWRS1x: power controller

PWRS1ax:功率控制器 PWRS1ax: power controller

PWRS1bx:功率控制器 PWRS1bx: power controller

PWRS1y:功率控制器 PWRS1y: Power controller

PWRS1ay:功率控制器 PWRS1ay: power controller

PWRS1by:功率控制器 PWRS1by: power controller

S0:狀態 S0: state

S0a:次狀態 S0a: secondary state

S0ax:次狀態 S0ax: secondary state

S0ay:次狀態 S0ay: secondary state

S0b:次狀態 S0b: secondary state

S0bx:次狀態 S0bx: secondary state

S0by:次狀態 S0by: secondary state

S1:狀態 S1: Status

S1a:次狀態 S1a: secondary state

S1ax:次狀態 S1ax: secondary state

S1ay:次狀態 S1ay: secondary state

S1b:次狀態 S1b: secondary state

S1bx:次狀態 S1bx: secondary state

S1by:次狀態 S1by: secondary state

Sm:狀態 Sm: State

Sna:次狀態 Sna: secondary state

Snb:次狀態 Snb: secondary state

TTL:訊號 TTL: signal

TTL1:訊號 TTL1: signal

TTL2:訊號 TTL2: signal

TTL4:訊號 TTL4: signal

TTL4-1:訊號 TTL4-1: Signal

TTL4-2:訊號 TTL4-2: Signal

TTL5:訊號 TTL5: Signal

參考附圖及下列說明可最佳地瞭解本案的實施例。 The embodiments of this case can be best understood with reference to the drawings and the following description.

圖1例示根據本發明所述之某些實施例之由RF產生器所產生之射頻(RF)訊號之一狀態內的次脈動。 FIG. 1 illustrates the sub-pulsation in a state of a radio frequency (RF) signal generated by an RF generator according to some embodiments of the present invention.

圖2A例示根據本發明所述之某些實施例之x百萬赫茲(MHz)RF產生器之一狀態內的次脈動。 FIG. 2A illustrates the sub-pulsation in one state of the x megahertz (MHz) RF generator according to some embodiments of the present invention.

圖2B例示根據本發明所述之各種實施例使用，利用y MHz RF產生器所產生之脈動所達到之x MHz RF產生器所產生之次脈動。 Fig. 2B illustrates the secondary pulsation generated by the x MHz RF generator that is reached by the pulsation generated by the y MHz RF generator and used according to various embodiments of the present invention.

圖2C例示根據本發明所述之數個實施例之在次狀態S1b期間具有非零邏輯位準的訊號。 FIG. 2C illustrates a signal having a non-zero logic level during the sub-state S1b according to several embodiments of the present invention.

圖2D例示根據本發明所述之某些實施例，說明在次狀態S1b期間具有非零邏輯位準之訊號以及y MHz RF產生器所產生的脈動訊號的使用。 FIG. 2D illustrates the use of a signal with a non-zero logic level and a pulsation signal generated by a y MHz RF generator during the sub-state S1b according to some embodiments of the present invention.

圖2E係用以例示根據本發明所述之數個實施例之在狀態S1期間具有不同於50%工作週期的一工作週期。 FIG. 2E is used to illustrate a duty cycle different from the 50% duty cycle during the state S1 according to several embodiments of the present invention.

圖3A圖示根據本發明所述之各種實施例之用以控制狀態S0及次狀態S1a與S1b期間之離子能量的系統。 FIG. 3A illustrates a system for controlling ion energy during the state S0 and the sub-states S1a and S1b according to various embodiments of the present invention.

圖3B圖示根據本發明所述之數個實施例之當x MHz RF產生器為主產生器時，用以控制狀態S0及次狀態S1a與S1b期間之離子能量的另一系統。 FIG. 3B illustrates another system for controlling ion energy during the state S0 and the sub-states S1a and S1b when the x MHz RF generator is the main generator according to several embodiments of the present invention.

圖4A例示根據本發明所述之某些實施例之操作在兩狀態S1與S0下的x MHz RF產生器及操作在狀態S1、次狀態S0a與次狀態S0b下的y MHz RF產生器。 4A illustrates an x MHz RF generator operating in two states S1 and S0 and a y MHz RF generator operating in state S1, sub-state S0a, and sub-state S0b according to certain embodiments of the present invention.

圖4B例示根據本發明所述之各種實施例之操作在狀態S1、次狀態S0a與次狀態S0b下的y MHz RF產生器以及在次狀態S0b期間不同於圖4A所示之功率訊號的一位準。 FIG. 4B illustrates a y MHz RF generator operating in state S1, sub-state S0a, and sub-state S0b according to various embodiments of the present invention, and a bit different from the power signal shown in FIG. 4A during sub-state S0b allow.

圖4C例示根據本發明所述之某些實施例之操作在狀態S1、次狀態S0a與次狀態S0b下的y MHz RF產生器以及在狀態次S0a期間不同於圖4A所示的一位準。 FIG. 4C illustrates a y MHz RF generator operating in state S1, sub-state S0a, and sub-state S0b according to certain embodiments of the present invention, and a level different from that shown in FIG. 4A during state sub-S0a.

圖4D例示根據本發明所述之各種實施例，相較於圖4A中所示之經輸送的功率訊號之位準，在狀態S0a與S0b期間使用不同位準之經輸送的功率訊號。 FIG. 4D illustrates that according to various embodiments of the present invention, compared to the level of the transmitted power signal shown in FIG. 4A, different levels of the transmitted power signal are used during states S0a and S0b.

圖4E例示根據本發明所述之各種實施例之在狀態S0期間非為50%工作週期的一相異工作週期。 FIG. 4E illustrates a different duty cycle that is not a 50% duty cycle during the state S0 according to various embodiments of the present invention.

圖5A顯示根據本發明所述之某些實施例的一系統，此系統係用以例示y MHz RF產生器產生具有狀態S1、及次狀態S0a與S0b之RF訊號。 FIG. 5A shows a system according to some embodiments of the present invention. This system is used to illustrate that a y MHz RF generator generates an RF signal with states S1, and substates S0a and S0b.

圖5B顯示根據本發明所述之各種實施例的一系統，此系統係用以例示當x MHz RF產生器為主產生器時，y MHz RF產生器產生具有狀態S1、及次狀態S0a與S0b的RF訊號。 FIG. 5B shows a system according to various embodiments of the present invention. This system is used to illustrate that when the x MHz RF generator is the main generator, the y MHz RF generator generates states S1, and substates S0a and S0b. RF signal.

圖6A例示根據本發明所述之某些實施例之x MHz RF產生器所產生之RF訊號在狀態S1與S0兩狀態期間的次脈動。 FIG. 6A illustrates the sub-pulsation of the RF signal generated by the x MHz RF generator according to some embodiments of the present invention during the two states S1 and S0.

圖6B例示根據本發明所述之各種實施例使用y MHz RF產生器並協同使用產生具有四個次狀態S0a、S0b、S1a與S1b之RF訊號的x MHz RF產生器。 6B illustrates the use of a y MHz RF generator according to various embodiments of the present invention and the x MHz RF generator that is used in conjunction to generate an RF signal with four sub-states S0a, S0b, S1a, and S1b.

圖6C例示根據本發明所述之數個實施例在狀態S0期間之工作週期係不同於在狀態S1期間的工作週期。 FIG. 6C illustrates that the duty cycle during the state S0 is different from the duty cycle during the state S1 according to several embodiments of the present invention.

圖7A顯示根據本發明中所述之某些實施例之一系統，此系統係用以例示在x MHz RF產生器中使用四個次狀態S0a、S0b、S1a與S1b。 FIG. 7A shows a system according to some embodiments described in the present invention. This system is used to illustrate the use of four sub-states S0a, S0b, S1a, and S1b in an x MHz RF generator.

圖7B顯示根據本發明所述之各種實施例的一系統，此系統係用以例示當x MHz RF產生器為主產生器時，在x MHz RF產生器中使用四個次狀態S0a、S0b、S1a與S1b。 FIG. 7B shows a system according to various embodiments of the present invention. This system is used to illustrate that when the x MHz RF generator is the main generator, four sub-states S0a, S0b, and S0b are used in the x MHz RF generator. S1a and S1b.

圖8A例示根據本發明所述之某些實施例之y MHz RF產生器所產生之RF訊號在狀態S1與S0兩狀態期間的次脈動。 FIG. 8A illustrates the sub-pulsation of the RF signal generated by the y MHz RF generator according to some embodiments of the present invention during the two states S1 and S0.

圖8B例示根據本發明所述之各種實施例使用x MHz RF產生器並協同使用產生具有四個次狀態S0a、S0b、S1a與S1b之RF訊號的y MHz RF產生器。 FIG. 8B illustrates the use of an x MHz RF generator according to various embodiments of the present invention and a y MHz RF generator that is used in conjunction to generate an RF signal with four sub-states S0a, S0b, S1a, and S1b.

圖8C例示根據本發明所述之各種實施例在狀態S0期間之工作週期係不同於在狀態S1期間之工作週期。 FIG. 8C illustrates that the duty cycle during the state S0 is different from the duty cycle during the state S1 according to various embodiments of the present invention.

圖9A顯示根據本發明所述之某些實施例之一系統，此系統係用以例示在y MHz RF產生器中使用四個次狀態S0a、S0b、S1a與S1b。 FIG. 9A shows a system according to some embodiments of the present invention. This system is used to illustrate the use of four sub-states S0a, S0b, S1a, and S1b in a y MHz RF generator.

圖9B顯示根據本發明所述之各種實施例的一系統，此系統係用以例示當x MHz RF產生器為主產生器時，在y MHz RF產生器中使用四個次狀態S0a、S0b、S1a與S1b。 FIG. 9B shows a system according to various embodiments of the present invention. This system is used to illustrate that when the x MHz RF generator is the main generator, four sub-states S0a, S0b, and S0b are used in the y MHz RF generator. S1a and S1b.

圖10A根據本發明所述之各種實施例例示x與y MHz RF產生器兩者的多個次狀態。 Figure 10A illustrates multiple sub-states of both x and y MHz RF generators according to various embodiments of the invention.

圖10B根據本發明所述之數個實施例例示x與y MHz RF產生器兩者的多個次狀態。 FIG. 10B illustrates multiple sub-states of both the x and y MHz RF generators according to several embodiments of the present invention.

圖11A顯示根據本發明所述之某些實施例之一系統，此系統係用以例示在x與y MHz RF產生器兩者中同時使用次脈動。 Figure 11A shows a system according to some embodiments of the present invention. This system is used to illustrate the simultaneous use of sub-pulsations in both x and y MHz RF generators.

圖11B顯示根據本發明所述之各種實施例之一系統，此系統係用以例示當x MHz RF產生器作為主產生器時，在x與y MHz RF產生器兩者中同時使用次脈動。 FIG. 11B shows a system according to one of the various embodiments of the present invention. This system is used to illustrate that when the x MHz RF generator is used as the primary generator, the secondary pulsation is used in both the x MHz RF generator and the y MHz RF generator at the same time.

圖12顯示根據本發明所述之數個實施例之一系統，此系統係用以例示在x MHz RF產生器或y MHz RF產生器中使用開關選擇四個次狀態S1a、S1b、S0a與S0b中的一者。 Figure 12 shows a system according to one of several embodiments of the present invention. This system is used to illustrate the use of switches to select four sub-states S1a, S1b, S0a, and S0b in an x MHz RF generator or a y MHz RF generator. One of them.

圖13A顯示根據本發明所述之某些實施例之一數位訊號處理器(DSP)，此DSP係用以例示使用內部時脈源產生數位脈動訊號。 FIG. 13A shows a digital signal processor (DSP) according to some embodiments of the present invention. The DSP is used to illustrate the use of an internal clock source to generate a digital pulse signal.

圖13B顯示根據本發明所述之各種實施例的一DSP，此DSP係用以例示使用複數內部時脈源產生數位脈動訊號。 FIG. 13B shows a DSP according to various embodiments of the present invention. The DSP is used to illustrate the use of multiple internal clock sources to generate digital pulsation signals.

圖14顯示根據本發明所述之某些實施例之一DSP，此DSP使用調變訊號來決定是否產生多個次狀態Sna與Snb或產生狀態Sm。 FIG. 14 shows a DSP according to some embodiments of the present invention. The DSP uses a modulated signal to determine whether to generate multiple sub-states Sna and Snb or to generate a state Sm.

下面的實施例說明一狀態內之次脈動用的系統與方法。當明白，在缺乏某些或全部此些特定細節的情況下仍可施行本發明實施例。在其他情況下，不詳細說明習知的製程操作以免不必要地模糊本發明實施例。 The following examples illustrate the system and method for secondary pulsation within a state. It should be understood that the embodiments of the present invention can still be implemented without some or all of these specific details. In other cases, the conventional process operations are not described in detail so as not to unnecessarily obscure the embodiments of the present invention.

圖1顯示射頻(RF)產生器100的一實施例，用以例示一狀態內的次脈動。RF產生器100接收時脈訊號(如電晶體-電晶體邏輯(TTL)訊號等)或產生時脈訊號。例如，RF產生器100自時脈源接收時脈訊號或包含能產生時脈訊號的時脈源。時脈源的實例包含振盪器(如石英振盪器等)或與鎖相迴路耦合的振盪 器。時脈訊號具有狀態Sm，其中m為1或0。例如，時脈訊號具有高狀態與低狀態，低狀態係低於高狀態。又例如，時脈訊號具有邏輯位準1與邏輯位準0。 FIG. 1 shows an embodiment of a radio frequency (RF) generator 100 to illustrate sub-pulsations in a state. The RF generator 100 receives a clock signal (such as a transistor-transistor logic (TTL) signal, etc.) or generates a clock signal. For example, the RF generator 100 receives a clock signal from a clock source or includes a clock source capable of generating a clock signal. Examples of clock sources include oscillators (such as quartz oscillators, etc.) or oscillations coupled with phase-locked loops Device. The clock signal has a state Sm, where m is 1 or 0. For example, the clock signal has a high state and a low state, and the low state is lower than the high state. For another example, the clock signal has a logic level of 1 and a logic level of 0.

RF產生器100自具有狀態Sm的時脈訊號產生脈動訊號。例如，RF產生器100產生脈動訊號，脈動訊號自狀態Sm轉換至次狀態Sna然後更進一步地轉換至次狀態Snb，其中n為0或1。RF產生器100所產生的脈動訊號的頻率係高於具有狀態Sm的時脈訊號的頻率。例如，脈動訊號在狀態S1或S0期間所具有的頻率係高於時脈訊號在狀態S1與狀態S0期間所具有的頻率。又例如，脈動訊號在狀態S1與S0期間所具有的頻率係高於時脈訊號在狀態S1與狀態S0期間所具有的頻率。 The RF generator 100 generates a pulsating signal from a clock signal having the state Sm. For example, the RF generator 100 generates a pulsation signal, and the pulsation signal transitions from the state Sm to the sub-state Sna and then further to the sub-state Snb, where n is 0 or 1. The frequency of the pulse signal generated by the RF generator 100 is higher than the frequency of the clock signal with the state Sm. For example, the frequency of the pulse signal during the state S1 or S0 is higher than the frequency of the clock signal during the state S1 and the state S0. For another example, the frequency of the pulse signal during the states S1 and S0 is higher than the frequency of the clock signal during the states S1 and S0.

在某些實施例中，狀態S1所具有的功率位準係高於狀態S0的功率位準。例如，具有狀態S1之RF訊號的功率位準為2000瓦，狀態S0期間RF訊號的功率位準為0瓦。又例如，具有狀態S1之RF訊號的功率位準係高於0瓦，狀態S0期間RF訊號的功率位準為0瓦。又更例如，狀態S0期間RF訊號的功率位準係高於0瓦，狀態S1期間RF訊號的功率位準係高於狀態S0期間RF訊號的功率位準。 In some embodiments, the power level of the state S1 is higher than the power level of the state S0. For example, the power level of the RF signal with the state S1 is 2000 watts, and the power level of the RF signal during the state S0 is 0 watts. For another example, the power level of the RF signal in the state S1 is higher than 0 watt, and the power level of the RF signal during the state S0 is 0 watt. For another example, the power level of the RF signal during the state S0 is higher than 0 watt, and the power level of the RF signal during the state S1 is higher than the power level of the RF signal during the state S0.

次狀態Sna與Snb係嵌於時脈訊號的狀態S1或狀態S0內。例如，次狀態Sna與Snb佔據複數狀態Sm中的一者。又例如，次狀態S1a與S1b佔據狀態S1但不佔據狀態S0。又更例如，次狀態S0a與S0b佔據狀態S0但不佔據狀態S1。 The secondary states Sna and Snb are embedded in the state S1 or state S0 of the clock signal. For example, the sub-states Sna and Snb occupy one of the plural states Sm. For another example, the secondary states S1a and S1b occupy the state S1 but not the state S0. For another example, the sub-states S0a and S0b occupy the state S0 but not the state S1.

如圖102所例示，具有次狀態Sna與Snb的脈動訊號自次狀態Sna轉換至次狀態Snb，然後更進一步地自次狀態Snb轉換至次狀態Sna，接著自次狀態Sna轉換至次狀態Snb，然後轉換至狀態Sm。 As shown in Figure 102, the pulsation signal with the sub-states Sna and Snb transitions from the sub-state Sna to the sub-state Snb, then further transitions from the sub-state Snb to the sub-state Sna, and then transitions from the sub-state Sna to the sub-state Snb, Then transition to state Sm.

圖2A為圖200的一實施例，圖200係用以例示x百萬赫茲(MHz)RF產生器之一狀態內的次脈動，其中x為2。在某些實施例中x係落在預定範圍2內。例如，x係落在2個MHz內。又例如，x為2.5。又更例如，x為1.5。 FIG. 2A is an embodiment of FIG. 200, which is used to illustrate the sub-pulsation in a state of x megahertz (MHz) RF generator, where x is 2. In some embodiments, x falls within the predetermined range 2. For example, x falls within 2 MHz. For another example, x is 2.5. For another example, x is 1.5.

在各種實施例中，x為27。在各種實施例中，x係落在預定範圍27內。例如，x係落在27的2MHz內。又例如，x為25.5。又更例如，x為29。又更例如，x係落在27的5MHz內。 In various embodiments, x is 27. In various embodiments, the x system falls within the predetermined range 27. For example, x falls within 27 of 2MHz. For another example, x is 25.5. For another example, x is 29. For another example, x falls within 27 of 5MHz.

圖200繪示脈動訊號202等之邏輯位準對時間的關係，時間的單位為秒。脈動訊號202係由如TTL1訊號等的時脈訊號204所產生。例如，脈動訊號202係藉著以如TTL2訊號等之調變訊號來調變時脈訊號204而自時脈訊號204產生。又例如，當時脈訊號204的振幅(如功率位準)乘以和脈動訊號202之振幅相同的一訊號振幅時，產生脈動訊號202。脈動訊號202為數位脈動訊號TTL3的一實例。 Fig. 200 shows the relationship between the logic level of the pulsation signal 202, etc. and time, and the unit of time is seconds. The pulsation signal 202 is generated by a clock signal 204 such as a TTL1 signal. For example, the pulse signal 202 is generated from the clock signal 204 by modulating the clock signal 204 with a modulation signal such as a TTL2 signal. For another example, when the amplitude (such as the power level) of the clock signal 204 is multiplied by a signal amplitude that is the same as the amplitude of the pulsation signal 202, the pulsation signal 202 is generated. The pulsation signal 202 is an example of the digital pulsation signal TTL3.

在時脈訊號204的狀態S0期間，脈動訊號202具有一邏輯位準，如邏輯位準0、邏輯位準0.5、邏輯位準0.2等。在時脈訊號204的狀態S1期間，脈動訊號202具有複數邏輯位準，如邏輯位準1與邏輯位準0、邏輯位準0.5與邏輯位準1、邏輯位準0.9與邏輯位準0等。在時脈訊號204的狀態S1期間，脈動訊號202在次狀態S1a與S1b之間轉換，例如交替。在脈動訊號202之次狀態S1a與S1b之間的轉換頻率係高於在時脈訊號204之狀態S1與S0之間的轉換頻率。例如，在次狀態S1b與S1a之間的轉換頻率為在狀態S0與S1之間的轉換頻率的四倍。又例如，在次狀態S1b與S1a之間的轉換頻率為在狀態S0與S1之間的轉換頻率的五倍。又更例如，在次狀態S1b與S1a之間的轉換頻率為在狀態S0與S1之間的轉換頻率的兩倍至100倍之間。 During the state S0 of the clock signal 204, the pulse signal 202 has a logic level, such as a logic level of 0, a logic level of 0.5, a logic level of 0.2, and so on. During the state S1 of the clock signal 204, the pulse signal 202 has a complex logic level, such as logic level 1 and logic level 0, logic level 0.5 and logic level 1, logic level 0.9 and logic level 0, etc. . During the state S1 of the clock signal 204, the pulsation signal 202 switches between the sub-states S1a and S1b, for example, alternates. The switching frequency between the secondary states S1a and S1b of the pulsation signal 202 is higher than the switching frequency between the states S1 and S0 of the clock signal 204. For example, the switching frequency between the secondary states S1b and S1a is four times the switching frequency between the states S0 and S1. For another example, the switching frequency between the sub-states S1b and S1a is five times the switching frequency between the states S0 and S1. For another example, the switching frequency between the sub-states S1b and S1a is between twice and 100 times the switching frequency between the states S0 and S1.

應注意，在各種實施例中，在次狀態S1a與S1b之間的訊號202的脈動會促進化學僵局(如氣體進入的時間等)發生於電漿室內、或使電漿室內達到一壓力、或達到使電漿室內達到一溫度、或使電漿室之下電極與上電極之間達到一間隙。又，在某些實施例中，進行在次狀態S1a與S1b之間之訊號202的脈動以控制基板的蝕刻或基板上的膜層沉積。在數個實施例中，在次狀態S1a與S1b之間之訊號202的脈動能降低會對晶圓之沉積膜層、矽、線路等或其上具有積體電路之基板的特徵部(如電路元件)造成損害之能量的產生機會。又，在某些實施例中，次狀態S1a能促進電漿室內產生離子之能量的產生，而次狀態S1b能促進電漿室內離子的移動以增進如蝕刻、清理、降低沉積率(和狀態S0期間相比)等製程。 It should be noted that in various embodiments, the pulsation of the signal 202 between the sub-states S1a and S1b will promote a chemical deadlock (such as the time for gas entry, etc.) to occur in the plasma chamber, or make the plasma chamber reach a pressure, or To achieve a temperature in the plasma chamber, or a gap between the lower electrode and the upper electrode of the plasma chamber. Furthermore, in some embodiments, the pulsation of the signal 202 between the sub-states S1a and S1b is performed to control the etching of the substrate or the deposition of the film on the substrate. In several embodiments, the reduction of the pulsation energy of the signal 202 between the sub-states S1a and S1b will affect the deposited film, silicon, wiring, etc. of the wafer or the features of the substrate with integrated circuits (such as circuit Component) the opportunity for energy to cause damage. Furthermore, in some embodiments, the sub-state S1a can promote the generation of energy for ions generated in the plasma chamber, and the sub-state S1b can promote the movement of ions in the plasma chamber to improve such as etching, cleaning, and reducing the deposition rate (and state S0 Compared with the period) and other processes.

應注意，x MHz RF產生器在時脈訊號204的狀態S0期間所產生之功率量係少於在脈動訊號204之次狀態S1a與S1b期間所產生之功率量。較少的功率量會導致電漿之離子之離子能量少於次狀態S1a與S1b期間所產生之離子能量及/或離子密度少於次狀態S1a與S1b期間所產生之離子密度。 It should be noted that the amount of power generated by the x MHz RF generator during the state S0 of the clock signal 204 is less than the amount of power generated during the secondary states S1a and S1b of the pulse signal 204. Less power will cause the ion energy of the plasma ions to be less than the ion energy and/or ion density generated during the sub-states S1a and S1b than the ion density generated during the sub-states S1a and S1b.

圖2B為圖210之一實施例，圖210係用以例示x MHz RF產生器與y MHz RF產生器之使用。y的實例包含27與60。在某些實施例中，y係落在預定範圍27之內。例如，y係介於25與29MHz之間。又例如，y係介於57與63MHz之間。又更例如，y係介於24與30MHz之間。又例如，y係介於55與65MHz之間。 FIG. 2B is an embodiment of FIG. 210, which is used to illustrate the use of the x MHz RF generator and the y MHz RF generator. Examples of y include 27 and 60. In some embodiments, y falls within the predetermined range 27. For example, y is between 25 and 29 MHz. For another example, y is between 57 and 63 MHz. For another example, y is between 24 and 30 MHz. For another example, y is between 55 and 65 MHz.

在某些實施例中，當x為2時、y為27。在各種實施例中，當x為27時、y為60。在數個實施例中，當x為2時、y為60。 In some embodiments, when x is 2, y is 27. In various embodiments, when x is 27, y is 60. In several embodiments, when x is 2, y is 60.

圖210繪示RF產生器所產生之RF訊號的經輸送的功率與時間之間的關係。應注意，經輸送的功率為前饋功率與反射功率之間的差。在某些實施 例中，前饋功率為RF產生器所產生並供給至電漿室的功率，反射功率為自電漿室朝向RF產生器反射的功率。 FIG. 210 shows the relationship between the transmitted power and time of the RF signal generated by the RF generator. It should be noted that the delivered power is the difference between the feedforward power and the reflected power. In some implementations In an example, the feedforward power is the power generated by the RF generator and supplied to the plasma chamber, and the reflected power is the power reflected from the plasma chamber toward the RF generator.

圖210包含RF訊號212，其係類似於脈動訊號202(圖2A)。例如，RF訊號212具有狀態S0、次狀態S1a與次狀態S1b且以脈動訊號202在此些狀態之間轉換的方式在狀態S0、次狀態S1a與次狀態S1b之間轉換。RF訊號212所具有的頻率係和脈動訊號202的頻率與TTL3訊號的頻率相同。RF訊號212係自經輸送的功率所產生，經輸送的功率係基於x MHz RF產生器所供給之RF訊號及朝向x MHz RF產生器反射之RF訊號所產生。 Diagram 210 includes RF signal 212, which is similar to pulsation signal 202 (FIG. 2A). For example, the RF signal 212 has a state S0, a sub-state S1a, and a sub-state S1b, and switches between the state S0, the sub-state S1a, and the sub-state S1b in a manner that the pulsating signal 202 switches between these states. The frequency of the RF signal 212 and the frequency of the pulsation signal 202 are the same as the frequency of the TTL3 signal. The RF signal 212 is generated from the transmitted power, and the transmitted power is generated based on the RF signal supplied by the x MHz RF generator and the RF signal reflected toward the x MHz RF generator.

在RF訊號212的狀態S0期間，y MHz產生器供給一RF訊號。當y MHz RF產生器供給RF訊號時，功率自電漿室朝向y MHz RF產生器反射以更進一步地產生經輸送的功率RF訊號214。RF訊號214具有狀態S0且所具有之頻率係與TTL1訊號的頻率相同。又，在RF訊號212的次狀態S1a與S1b期間，RF訊號214具有狀態S1。RF訊號212在狀態S1與S0之間轉換。例如，當RF訊號212在狀態S0、次狀態S1a與次狀態S1b之間轉換時，RF訊號214在狀態S1與S0之間轉換。 During the state S0 of the RF signal 212, the y MHz generator supplies an RF signal. When the y MHz RF generator supplies the RF signal, the power is reflected from the plasma chamber toward the y MHz RF generator to further generate the transmitted power RF signal 214. The RF signal 214 has the state S0 and has the same frequency as the TTL1 signal. Moreover, during the sub-states S1a and S1b of the RF signal 212, the RF signal 214 has the state S1. The RF signal 212 transitions between the states S1 and S0. For example, when the RF signal 212 transitions between the state S0, the sub-state S1a, and the sub-state S1b, the RF signal 214 transitions between the states S1 and S0.

圖2C為圖220之一實施例，圖220係用以例示在次狀態S1b期間具有非零邏輯位準的脈動訊號222。除了脈動訊號222在次狀態S1b期間具有非零邏輯位準外，脈動訊號222係類似於脈動訊號202(圖2B)。例如，除了脈動訊號222從次狀態S1a掉落至次狀態S1b(次狀態S1b的位準係高於脈動訊號204之狀態S0的位準)外，脈動訊號222係以類似於脈動訊號202的方式產生。接著，脈動訊號222自次狀態S1b的位準掉落至狀態S0的位準以自次狀態S1b轉換至狀態S0。脈動訊號222具有之頻率係與數位脈動訊號TTL3之頻率相同。 FIG. 2C is an embodiment of FIG. 220, which is used to illustrate the pulsation signal 222 having a non-zero logic level during the sub-state S1b. Except that the pulsation signal 222 has a non-zero logic level during the sub-state S1b, the pulsation signal 222 is similar to the pulsation signal 202 (FIG. 2B). For example, except that the pulsation signal 222 falls from the sub-state S1a to the sub-state S1b (the level of the sub-state S1b is higher than the level of the state S0 of the pulsation signal 204), the pulsation signal 222 is similar to the pulsation signal 202 produce. Then, the pulsation signal 222 drops from the level of the sub-state S1b to the level of the state S0 to transition from the sub-state S1b to the state S0. The frequency of the pulsation signal 222 is the same as that of the digital pulsation signal TTL3.

圖2D為圖230之一實施例，圖230係用以例示與y MHz RF產生器所產生的脈動訊號214協同使用之在次狀態S1b期間具有非零邏輯位準的脈動訊號232。除了脈動訊號232在次狀態S1b期間具有非零邏輯位準外，脈動訊號232係類似於脈動訊號212(圖2B)。例如，除了脈動訊號232從次狀態S1a轉換至高於脈動訊號214之狀態S0之經輸送的功率位準的一位準外，脈動訊號232係以類似於脈動訊號212的方式產生。較高位準係於次狀態S1b期間達到。在次狀態S1b期間達到較高位準後，脈動訊號232在狀態S0期間轉換至脈動訊號214的位準。脈動訊號232所具有之頻率係與數位脈動訊號TTL3的頻率相同。 FIG. 2D is an embodiment of FIG. 230. FIG. 230 is used to illustrate the pulsation signal 232 having a non-zero logic level during the sub-state S1b used in conjunction with the pulsation signal 214 generated by the y MHz RF generator. Except that the pulsation signal 232 has a non-zero logic level during the sub-state S1b, the pulsation signal 232 is similar to the pulsation signal 212 (FIG. 2B). For example, the pulsation signal 232 is generated in a manner similar to the pulsation signal 212 except that the pulsation signal 232 transitions from the sub-state S1a to a level higher than the delivered power level of the state S0 of the pulsation signal 214. The higher level is reached during the sub-state S1b. After reaching a higher level during the sub-state S1b, the pulsation signal 232 transitions to the level of the pulsation signal 214 during the state S0. The frequency of the pulsation signal 232 is the same as that of the digital pulsation signal TTL3.

應注意，雖然將基於y MHz RF產生器所供給之RF訊號所產生的脈動訊號214顯示為具有約100瓦的高量經輸送的功率位準及約10瓦的低量經輸送的功率位準，但在某些實施例中，脈動訊號214在在狀態S1期間具有介於60瓦至160瓦的高功率位準，並在狀態S0期間具有介於1瓦至55瓦的低功率位準。在各種實施例中，在次狀態S1a期間基於x MHz RF產生器所供給之RF訊號所產生之脈動經輸送的功率訊號的最高功率位準係高於在狀態S1期間基於y MHz RF產生器所供給之RF訊號所產生之脈動經輸送的功率訊號的最高功率位準。在某些實施例中，在狀態S0期間基於x MHz RF產生器所供給之RF訊號所產生之經輸送的功率脈動訊號的最低功率位準係低於在狀態S0期間基於y MHz RF產生器所供給之RF訊號所產生之經輸送的功率脈動訊號的最低功率位準。 It should be noted that although the pulsation signal 214 generated based on the RF signal supplied by the y MHz RF generator is shown to have a high delivered power level of about 100 watts and a low delivered power level of about 10 watts However, in some embodiments, the pulsation signal 214 has a high power level between 60 watts and 160 watts during the state S1, and a low power level between 1 watt and 55 watts during the state S0. In various embodiments, the highest power level of the transmitted power signal based on the pulsation generated by the RF signal supplied by the x MHz RF generator during the sub-state S1a is higher than that of the y MHz RF generator during the state S1. The highest power level of the transmitted power signal generated by the pulsation generated by the supplied RF signal. In some embodiments, the lowest power level of the transmitted power ripple signal generated based on the RF signal supplied by the x MHz RF generator during the state S0 is lower than that during the state S0 based on the y MHz RF generator. The lowest power level of the transmitted power ripple signal generated by the supplied RF signal.

在各種實施例中，狀態S0佔據的時間期間係與次狀態S1a與S1b兩者佔據的時間期間相同。例如，狀態S0佔據時脈訊號TTL1的半個時脈週期，次狀態S1a與S1b佔據剩下的半個時脈週期。在數個實施例中，狀態S0佔據的時間 期間係小於或大於時脈訊號TTL1之半個時脈週期，次狀態S1a與S1b佔據時脈週期的剩餘期間。 In various embodiments, the time period occupied by the state S0 is the same as the time period occupied by both the sub-states S1a and S1b. For example, the state S0 occupies half of the clock cycle of the clock signal TTL1, and the sub-states S1a and S1b occupy the remaining half of the clock cycle. In several embodiments, the time occupied by state S0 The period is less than or greater than half the clock period of the clock signal TTL1, and the sub-states S1a and S1b occupy the remaining period of the clock period.

圖2E顯示圖240的一實施例，圖240係用以例示在狀態S1期間非50%工作週期的一相異工作週期。圖240繪示2MHz RF產生器所輸送之功率對時間t的關係。經輸送的功率係顯示為脈動訊號242。應注意，訊號242在狀態S1期間的工作週期係大於50%，且狀態S1期間所佔據的時間係等於狀態S0期間所佔據的時間。例如，訊號242在次狀態S1a期間所佔據的時間係多於在次狀態S1b期間所佔據的時間。在某些實施例中，訊號242在狀態S1期間的工作週期係小於50%。例如，經輸送之RF訊號在次狀態S1a期間所佔據的時間係少於在次狀態S1b期間所佔據的時間。 FIG. 2E shows an embodiment of FIG. 240. FIG. 240 is used to illustrate a different duty cycle other than the 50% duty cycle during the state S1. Figure 240 shows the relationship between the power delivered by the 2MHz RF generator and the time t. The transmitted power is displayed as a pulsation signal 242. It should be noted that the duty cycle of the signal 242 during the state S1 is greater than 50%, and the time occupied during the state S1 is equal to the time occupied during the state S0. For example, the time occupied by the signal 242 during the secondary state S1a is more than the time occupied during the secondary state S1b. In some embodiments, the duty cycle of the signal 242 during the state S1 is less than 50%. For example, the time occupied by the transmitted RF signal during the sub-state S1a is less than the time during the sub-state S1b.

更應注意，每一訊號202、212、222與232(圖2A至2D)在狀態S1期間的工作週期為50%。 It should be noted that the duty cycle of each signal 202, 212, 222, and 232 (FIGS. 2A to 2D) during the state S1 is 50%.

在數個實施例中，x MHz RF產生器所輸送之功率的狀態S1佔據時間係少於x MHz RF產生器所輸送之功率的狀態S0佔據時間。在此些實施例中，經輸送的功率在狀態S1期間的工作週期為50%。 In several embodiments, the occupation time of the state S1 of the power delivered by the x MHz RF generator is less than the occupation time of the state S0 of the power delivered by the x MHz RF generator. In these embodiments, the duty cycle of the delivered power during the state S1 is 50%.

在各種實施例中，x MHz RF產生器所輸送之功率的狀態S1佔據時間係少於或多於x MHz RF產生器所輸送之功率的狀態S0佔據時間。在此些實施例中，經輸送的功率在狀態S1期間的工作週期係大於或小於50%。 In various embodiments, the state S1 occupancy time of the power delivered by the x MHz RF generator is less than or more than the state S0 occupancy time of the power delivered by the x MHz RF generator. In these embodiments, the duty cycle of the delivered power during the state S1 is greater than or less than 50%.

在某些實施例中，TTL訊號所具有之頻率係等於脈動訊號242在狀態S1期間所具有的頻率。TTL訊號係由產生TTL3訊號的裝置所產生。例如，下面將說明的x MHz RF產生器的數位訊號處理器(DSPx)自TTL1訊號及調變訊號產生TTL訊號。調變訊號對TTL1訊號進行調變以產生TTL訊號。 In some embodiments, the frequency of the TTL signal is equal to the frequency of the pulse signal 242 during the state S1. The TTL signal is generated by the device that generates the TTL3 signal. For example, the digital signal processor (DSPx) of the x MHz RF generator described below generates TTL signals from TTL1 signals and modulated signals. The modulation signal modulates the TTL1 signal to generate a TTL signal.

圖3A顯示系統300的一實施例，系統300係用以控制TTL1訊號的狀態S1期間的離子能量。系統300包含x MHz RF產生器與y MHz RF產生器。系統300更包含阻抗匹配電路302、電漿室304及工具使用者界面(UI)系統306。工具UI系統306的實例包含桌上型電腦、伺服器、虛擬機器、筆記型電腦、平板電腦、手機、智慧手機等。在各種實施例中，工具UI系統306包含處理器及記憶體裝置，下面將提供其實例。在某些實施例中，工具UI系統306係藉由如廣域網路(WAN)、區域網路(LAN)、網際網路、內部網路等的電腦網路耦合至x與y MHz RF產生器。 FIG. 3A shows an embodiment of the system 300. The system 300 is used to control the ion energy during the state S1 of the TTL1 signal. The system 300 includes an x MHz RF generator and a y MHz RF generator. The system 300 further includes an impedance matching circuit 302, a plasma chamber 304, and a tool user interface (UI) system 306. Examples of the tool UI system 306 include desktop computers, servers, virtual machines, notebook computers, tablet computers, mobile phones, smart phones, and so on. In various embodiments, the tool UI system 306 includes a processor and a memory device, examples of which are provided below. In some embodiments, the tool UI system 306 is coupled to the x and y MHz RF generators via a computer network such as a wide area network (WAN), a local area network (LAN), the Internet, an intranet, etc.

阻抗匹配電路302係藉由RF纜線308耦合至x MHz RF產生器的輸出。類似地，阻抗匹配電路302係藉由RF纜線310耦合至y MHz RF產生器的輸出。阻抗匹配網路302匹配耦合至阻抗匹配網路302一側之電漿系統304之一負載的阻抗與耦合至阻抗匹配網路302另一側之一源的阻抗。例如，阻抗匹配網路302匹配RF傳輸線312與電漿系統304的阻抗與x MHz RF產生器、y MHz RF產生器、RF纜線308、及RF纜線310的阻抗。 The impedance matching circuit 302 is coupled to the output of the x MHz RF generator via the RF cable 308. Similarly, the impedance matching circuit 302 is coupled to the output of the y MHz RF generator through the RF cable 310. The impedance matching network 302 matches the impedance of a load of the plasma system 304 coupled to one side of the impedance matching network 302 with the impedance of a source coupled to the other side of the impedance matching network 302. For example, the impedance matching network 302 matches the impedance of the RF transmission line 312 and the plasma system 304 with the impedance of the x MHz RF generator, the y MHz RF generator, the RF cable 308, and the RF cable 310.

電漿室304係藉由RF傳輸線312耦合至阻抗匹配電路302。電漿室304包含夾頭314、上電極316及其他部件(未顯示)，如圍繞上電極316的上介電環、圍繞上介電環的上電極延伸件、圍繞夾頭314之下電極的下介電環、圍繞下介電環的下電極延伸件、上電漿排除區(PEZ)環、下PEZ環等。上電極316係面對夾頭314並與其相望。晶圓318(如虛置基板、半導體晶圓等)在夾頭314的上表面320上受到其支撐。在製造期間於半導體晶圓上進行各種製程，如化學氣相沉積、清理、沉積、濺射、蝕刻、離子植入、光阻剝除等。在半導體晶圓上建構積體電路，如特殊應用積體電路(ASIC)、可程式化邏輯裝置(PLD)等，且積體電路係用於各種電子裝置，如手機、平板、智慧型手機、電腦、筆記型電腦、網路設備等中。 The plasma chamber 304 is coupled to the impedance matching circuit 302 through the RF transmission line 312. The plasma chamber 304 includes a clamp 314, an upper electrode 316, and other components (not shown), such as an upper dielectric ring surrounding the upper electrode 316, an upper electrode extension member surrounding the upper dielectric ring, and a lower electrode surrounding the clamp 314 The lower dielectric ring, the lower electrode extension surrounding the lower dielectric ring, the upper plasma exclusion zone (PEZ) ring, the lower PEZ ring, etc. The upper electrode 316 faces and faces the chuck 314. The wafer 318 (such as a dummy substrate, a semiconductor wafer, etc.) is supported by the upper surface 320 of the chuck 314. Various processes are performed on semiconductor wafers during manufacturing, such as chemical vapor deposition, cleaning, deposition, sputtering, etching, ion implantation, photoresist stripping, etc. Build integrated circuits on semiconductor wafers, such as special application integrated circuits (ASIC), programmable logic devices (PLD), etc., and integrated circuits are used in various electronic devices, such as mobile phones, tablets, smart phones, Computers, notebook computers, network equipment, etc.

下電極與上電極316的每一者係由金屬(如鋁、鋁合金、銅等)所製成。夾頭314可為靜電夾頭(ESC)或磁性夾頭。 Each of the bottom electrode and the top electrode 316 is made of metal (such as aluminum, aluminum alloy, copper, etc.). The chuck 314 may be an electrostatic chuck (ESC) or a magnetic chuck.

工具UI系統306包含能產生時脈訊號(如數位脈動訊號、TTL1訊號等)的時脈源，時脈訊號係藉由纜線313而供給予x MHz RF產生器的DSPx。文中所指的處理器可以是中央處理單元(CPU)、微處理器、ASIC、PLD、控制器等。工具UI系統306亦藉由纜線314將時脈訊號TTL1供給予y MHz RF產生器的DSP(DSPy)。纜線313與314的每一者皆包含通用序列匯流排(USB)纜線、串接纜線、平行纜線、乙太網纜線等。 The tool UI system 306 includes a clock source capable of generating a clock signal (such as a digital pulse signal, a TTL1 signal, etc.). The clock signal is supplied to the DSPx of the x MHz RF generator through a cable 313. The processor referred to in the text can be a central processing unit (CPU), a microprocessor, an ASIC, a PLD, a controller, and so on. The tool UI system 306 also supplies the clock signal TTL1 to the DSP (DSPy) of the y MHz RF generator through the cable 314. Each of the cables 313 and 314 includes a universal serial bus (USB) cable, a serial cable, a parallel cable, an Ethernet cable, and so on.

工具UI系統306將包含了效能參數的配方(如數據檔案等)提供予x與y MHz RF產生器的每一者，效能參數例如是一狀態的工作週期、佔據存在的持續時間區間、功率位準、頻率位準等。例如，工具UI系統306將用以操作x MHz RF產生器的配方提供予DSPx、並將用以操作y MHz RF產生器的配方提供予DSPy。配方係儲存在DSPx與DSPy每一者中。 The tool UI system 306 provides formulas (such as data files, etc.) containing performance parameters to each of the x and y MHz RF generators. The performance parameters are, for example, the duty cycle of a state, the duration of the occupation, and the power position. Level, frequency level, etc. For example, the tool UI system 306 provides the recipe for operating the x MHz RF generator to DSPx and the recipe for operating the y MHz RF generator to DSPy. The recipe is stored in each of DSPx and DSPy.

DSPx接收時脈訊號TTL1並自時脈訊號TTL1產生數位脈動訊號如TTL3訊號。例如，DSPx接收時脈訊號TTL1並修改狀態S1期間的時脈訊號TTL1、以在TTL1訊號的狀態S1期間增加次脈動。又例如，DSPx接收時脈訊號TTL1並修改狀態S1期間的時脈訊號TTL1、以增加狀態S1期間之時脈訊號TTL1的頻率而產生數位脈動訊號TTL3。在此實例中，DSPx不會修改狀態S0期間的時脈訊號TTL1。又更例如，DSPx接收時脈訊號TTL1並包含可產生時脈訊號TTL2的時脈源。時脈訊號TTL2所具有的頻率係與數位脈動訊號TTL3在狀態S1期間所具有的頻率相同。又，時脈訊號TTL1所具有的頻率係與時脈訊號TTL3在狀態S0 期間所具有的頻率相同。DSPx將時脈訊號TTL1乘以時脈訊號TTL2而產生時脈訊號TTL3。 DSPx receives the clock signal TTL1 and generates a digital pulse signal such as TTL3 signal from the clock signal TTL1. For example, DSPx receives the clock signal TTL1 and modifies the clock signal TTL1 during the state S1 to increase the pulse during the state S1 of the TTL1 signal. For another example, DSPx receives the clock signal TTL1 and modifies the clock signal TTL1 during the state S1 to increase the frequency of the clock signal TTL1 during the state S1 to generate the digital pulse signal TTL3. In this example, DSPx will not modify the clock signal TTL1 during state S0. For another example, DSPx receives the clock signal TTL1 and includes a clock source that can generate the clock signal TTL2. The frequency of the clock signal TTL2 is the same as the frequency of the digital pulse signal TTL3 during the state S1. Also, the frequency of the clock signal TTL1 and the clock signal TTL3 are in the state S0 The frequency of the period is the same. DSPx multiplies the clock signal TTL1 by the clock signal TTL2 to generate the clock signal TTL3.

在數個實施例中，DSPx包含能產生時脈訊號TTL1的時脈源，而非自工具UI系統306接收時脈訊號TTL1。在各種實施例中，x MHz RF產生器包含能產生時脈訊號TTL1的時脈源，而非自工具UI系統306接收時脈訊號TTL1。 In several embodiments, the DSPx includes a clock source capable of generating the clock signal TTL1 instead of receiving the clock signal TTL1 from the tool UI system 306. In various embodiments, the x MHz RF generator includes a clock source capable of generating the clock signal TTL1 instead of receiving the clock signal TTL1 from the tool UI system 306.

在各種實施例中，時脈訊號TTL2係由位於工具UI系統306內的時脈源所接收。在某些實施例中時脈訊號TTL2係由x MHz RF產生器內的時脈源所產生。 In various embodiments, the clock signal TTL2 is received by a clock source located in the tool UI system 306. In some embodiments, the clock signal TTL2 is generated by a clock source in an x MHz RF generator.

在狀態S1b期間，自DSPx將針對次狀態S1b的數位脈動訊號TTL3與時脈訊號TTL1提供予功率控制器PWRS1bx、並將針對次狀態S1b的數位脈動訊號TTL3與時脈訊號TTL1提供予自動頻率調整器(AFT)AFTS1bx。例如，自DSPx將TTL3訊號具有次狀態S1b的部分提供予功率控制器PWRS1bx及調整器AFTS1bx。 During the state S1b, the DSPx provides the digital pulsation signal TTL3 and the clock signal TTL1 for the sub-state S1b to the power controller PWRS1bx, and the digital pulsation signal TTL3 and the clock signal TTL1 for the sub-state S1b for automatic frequency adjustment Device (AFT) AFTS1bx. For example, the part of the TTL3 signal with the sub-state S1b is provided from the DSPx to the power controller PWRS1bx and the regulator AFTS1bx.

在某些實施例中，RF產生器的功率控制器及RF產生器的AFT皆為RF產生器之DSP的部件。例如，x MHz RF產生器的自動頻率調整器AFTS0x、AFTS1ax與AFTS1bx及功率控制器PWRS1ax、PWRS1bx與PWRS0x皆為被整合至DSPx之電路內的電路。又例如，調整器AFTS0x、AFTS1ax與AFTS1bx及功率控制器PWRS1ax、PWRS1bx與PWRS0x皆為DSPx所執行之電腦程式的一部分。 In some embodiments, the power controller of the RF generator and the AFT of the RF generator are both components of the DSP of the RF generator. For example, the automatic frequency adjusters AFTS0x, AFTS1ax and AFTS1bx and the power controllers PWRS1ax, PWRS1bx and PWRS0x of the x MHz RF generator are all circuits integrated into the circuit of the DSPx. For another example, the regulators AFTS0x, AFTS1ax and AFTS1bx and the power controllers PWRS1ax, PWRS1bx and PWRS0x are all part of the computer program executed by the DSPx.

功率控制器PWRS1bx接收針對次狀態S1b的數位脈動訊號TTL3並接收針對狀態S1的時脈訊號TTL1，並決定或辨識欲被x MHz RF產生器產生並供給的RF訊號的功率位準。欲被x MHz RF產生器產生並供給的RF訊號的功率位準所具有的頻率係與數位脈動訊號TTL3在次狀態S1b期間的頻率相同。在某些實 施例中，對應至、映射至、連結至TTL3訊號之次狀態S1b及對應至TTL1時脈訊號之狀態S1的功率位準係儲存在功率控制器PWRS1bx之記憶體裝置中。記憶體裝置的實例包含唯讀記憶體(ROM)、隨機存取記憶體(RAM)、或其組合。在某些實施例中，記憶體裝置為快閃記憶體、獨立磁碟冗餘陣列(RAID)、硬碟等。 The power controller PWRS1bx receives the digital pulse signal TTL3 for the sub-state S1b and the clock signal TTL1 for the state S1, and determines or recognizes the power level of the RF signal to be generated and supplied by the x MHz RF generator. The frequency of the power level of the RF signal to be generated and supplied by the x MHz RF generator is the same as the frequency of the digital pulsation signal TTL3 during the sub-state S1b. In some real In the embodiment, the power levels corresponding to, mapped to, and connected to the secondary state S1b of the TTL3 signal and the state S1 corresponding to the TTL1 clock signal are stored in the memory device of the power controller PWRS1bx. Examples of memory devices include read-only memory (ROM), random access memory (RAM), or a combination thereof. In some embodiments, the memory device is a flash memory, a redundant array of independent disks (RAID), a hard disk, and the like.

在各種實施例中，TTL3訊號之次狀態S1b及TTL1訊號的狀態S1的功率位準係基於欲達到的處理速率(如欲達到的蝕刻率、欲達到的沉積率、欲達到的清理率、欲達到的濺射率等)所決定。蝕刻率為晶圓318的蝕刻率。沉積率為在晶圓318上沉積如聚合物、光遮罩、單體等材料的沉積率。清理率為例如藉由蝕刻、藉由沉積、藉由沉積與蝕刻等清理晶圓318的清理率。濺射率為濺射晶圓318或濺射沉積在晶圓318上之材料的濺射率。 In various embodiments, the power levels of the secondary state S1b of the TTL3 signal and the state S1 of the TTL1 signal are based on the desired processing rate (such as the desired etching rate, the desired deposition rate, the desired cleaning rate, The achieved sputtering rate, etc.) are determined. The etching rate is the etching rate of the wafer 318. The deposition rate is the deposition rate of materials such as polymers, photomasks, monomers, etc., deposited on the wafer 318. The cleaning rate is, for example, the cleaning rate of cleaning the wafer 318 by etching, deposition, deposition, and etching. The sputtering rate is the sputtering rate of the sputtered wafer 318 or the material deposited on the wafer 318 by sputtering.

又，調整器AFTS1bx接收針對次狀態S1b的數位脈動訊號TTL3並接收針對狀態S1的時脈訊號TTL1，並決定或辨識欲被x MHz RF產生器產生的RF訊號的一射頻頻率的量或一系列射頻頻率的複數量。在某些實施例中，對應至TTL3訊號之次狀態S1b及對應至TTL1時脈訊號之狀態S1的一射頻頻率的量或一系列射頻頻率的複數量係儲存在調整器AFTS1bx的記憶體裝置中。 In addition, the adjuster AFTS1bx receives the digital pulse signal TTL3 for the sub-state S1b and the clock signal TTL1 for the state S1, and determines or recognizes the amount or series of a radio frequency of the RF signal to be generated by the x MHz RF generator The complex number of radio frequencies. In some embodiments, a radio frequency quantity corresponding to the secondary state S1b of the TTL3 signal and the state S1 corresponding to the TTL1 clock signal or a series of complex quantities of radio frequencies are stored in the memory device of the adjuster AFTS1bx .

對應至TTL3訊號之次狀態S1b及TTL1時脈訊號之狀態S1的功率位準係自功率控制器PWRS1bx提供至x MHz RF產生器的RF電源322。又，一射頻頻率的量或一系列射頻頻率的複數量係由調整器AFTS1bx提供至RF電源322。在接收到TTL3訊號之次狀態S1b與TTL1時脈訊號之狀態S1的功率位準以及一射頻頻率的量或一系列射頻頻率之複數量後，RF電源322產生具有該功率位準以及該射頻頻率的量或該系列射頻頻率之複數量的RF訊號。RF電源322所產生之RF訊號係藉由RF纜線308而供給至阻抗匹配電路302。 The power level corresponding to the secondary state S1b of the TTL3 signal and the state S1 of the TTL1 clock signal is provided from the power controller PWRS1bx to the RF power source 322 of the x MHz RF generator. In addition, an amount of radio frequency or a series of complex amounts of radio frequency is provided to the RF power source 322 by the adjuster AFTS1bx. After receiving the power level of the secondary state S1b of the TTL3 signal and the state S1 of the TTL1 clock signal and the amount of a radio frequency or a complex amount of a series of radio frequencies, the RF power source 322 generates the power level and the radio frequency. The amount of the RF signal or the complex amount of the series of RF frequencies. The RF signal generated by the RF power source 322 is supplied to the impedance matching circuit 302 through the RF cable 308.

又，在TTL1訊號的狀態S1期間，y MHz RF產生器的DSPy將時脈訊號TTL1提供予y MHz RF產生器的功率控制器PWRS1y。又，y MHz RF產生器的DSPy將時脈訊號TTL1提供予y MHz RF產生器的調整器AFTS1y。在接收到時脈訊號TTL1後，功率控制器PWRS1y決定或辨識y MHz RF產生器欲產生之RF訊號的功率位準。例如，時脈訊號TTL1之一狀態與y MHz RF產生器欲產生之RF訊號之一功率位準之間的對應(如匹配、連結、一對一關係等)係儲存在功率控制器PWRS1y的記憶體裝置中。 Also, during the state S1 of the TTL1 signal, the DSPy of the y MHz RF generator provides the clock signal TTL1 to the power controller PWRS1y of the y MHz RF generator. In addition, the DSPy of the y MHz RF generator provides the clock signal TTL1 to the adjuster AFTS1y of the y MHz RF generator. After receiving the clock signal TTL1, the power controller PWRS1y determines or recognizes the power level of the RF signal to be generated by the y MHz RF generator. For example, the correspondence between a state of the clock signal TTL1 and a power level of the RF signal to be generated by the y MHz RF generator (such as matching, connection, one-to-one relationship, etc.) is stored in the memory of the power controller PWRS1y体装置中。 In the body device.

又，在接收到時脈訊號TTL1後，調整器AFTS1y決定或辨識y MHz RF產生器欲產生之RF訊號的一射頻頻率的量或一系列射頻頻率的複數量。例如，時脈訊號TTL1之一狀態與y MHz RF產生器欲產生之RF訊號的一射頻頻率的量或一系列射頻頻率的複數量之間的對應係儲存在調整器AFTS1y的記憶體裝置中。 In addition, after receiving the clock signal TTL1, the adjuster AFTS1y determines or recognizes a radio frequency quantity or a series of complex quantities of the radio frequency frequency of the RF signal to be generated by the y MHz RF generator. For example, the correspondence between a state of the clock signal TTL1 and a radio frequency quantity or a series of complex quantities of the RF signal to be generated by the y MHz RF generator is stored in the memory device of the adjuster AFTS1y.

對應至狀態S1的功率位準係自功率控制器PWRS1y提供至y MHz RF產生器的RF電源324。又，一射頻頻率的量或一系列射頻頻率的複數量係由調整器AFTS1y提供至RF電源324。在接收到狀態S1的功率位準以及該射頻頻率的量或該系列射頻頻率的複數量之後，RF電源324產生具有該功率位準以及該射頻頻率的量或該系列射頻頻率的複數量的RF訊號。RF電源324所產生的RF訊號係藉由RF纜線310而供給至阻抗匹配電路302。 The power level corresponding to the state S1 is provided from the power controller PWRS1y to the RF power source 324 of the y MHz RF generator. In addition, an amount of radio frequency or a series of complex amounts of radio frequency is provided to the RF power source 324 by the adjuster AFTS1y. After receiving the power level of the state S1 and the quantity of the radio frequency frequency or the complex quantity of the series of radio frequency frequencies, the RF power source 324 generates an RF having the power level and the quantity of the radio frequency frequency or the complex quantity of the series of radio frequencies. Signal. The RF signal generated by the RF power supply 324 is supplied to the impedance matching circuit 302 through the RF cable 310.

應注意，在某些實施例中DSPx藉由一纜線將TTL3訊號提供至DSPy。在狀態S1期間，DSPy基於TTL3訊號決定自次狀態S1a轉換至次狀態S1b的轉換時間以及自次狀態S1b轉換至次狀態S1a的轉換時間。又，在狀態S1期間，DSPy發送一訊號至功率控制器PWRS1y，以調整在自次狀態S1a轉換至次狀態 S1b的轉換時間處或自次狀態S1b轉換至次狀態S1a的轉換時間處由功率控制器PWRS1y所決定的功率。所決定的功率係基於x MHz RF產生器所輸送或供給之功率在次狀態S1a與S1b之間轉換時所發生的電漿阻抗變化來進行調整。為了補償x MHz RF產生器所輸送或供給之功率在次狀態S1a與S1b之間轉換時的調整，自DSPx發送TTL3訊號至DSPy。x MHz RF產生器所輸送或供給的功率的調整會造成電漿阻抗的變化。 It should be noted that in some embodiments DSPx provides the TTL3 signal to DSPy via a cable. During the state S1, DSPy determines the transition time from the secondary state S1a to the secondary state S1b and the transition time from the secondary state S1b to the secondary state S1a based on the TTL3 signal. Also, during the state S1, DSPy sends a signal to the power controller PWRS1y to adjust the transition from the sub-state S1a to the sub-state The power determined by the power controller PWRS1y at the transition time of S1b or the transition time from the secondary state S1b to the secondary state S1a. The determined power is adjusted based on the plasma impedance change that occurs when the power delivered or supplied by the x MHz RF generator is switched between the sub-states S1a and S1b. In order to compensate for the adjustment of the power delivered or supplied by the x MHz RF generator during the transition between sub-states S1a and S1b, a TTL3 signal is sent from DSPx to DSPy. The adjustment of the power delivered or supplied by the x MHz RF generator will cause the plasma impedance to change.

又，在狀態S1期間，DSPy發送一訊號至調整器AFTS1y以調整在自次狀態S1a轉換至次狀態S1b的轉換時間處或自次狀態S1b轉換至次狀態S1a的轉換時間處由調整器AFTS1y所決定的頻率。所決定的頻率係基於x MHz RF產生器所供給之功率在次狀態S1a與S1b之間轉換時所發生的電漿阻抗變化來進行調整。為了補償x MHz RF產生器所產生之RF訊號之頻率在次狀態S1a與S1b之間轉換時的調整，自DSPx發送TTL3訊號至DSPy。x MHz RF產生器所產生之RF訊號的頻率的調整會造成電漿阻抗的變化。 Also, during the state S1, DSPy sends a signal to the adjuster AFTS1y to adjust the transition time from the secondary state S1a to the secondary state S1b or the transition time from the secondary state S1b to the secondary state S1a by the adjuster AFTS1y. Frequency of decision. The determined frequency is adjusted based on the plasma impedance change that occurs when the power supplied by the x MHz RF generator is switched between the sub-states S1a and S1b. In order to compensate for the adjustment of the frequency of the RF signal generated by the x MHz RF generator between the sub-states S1a and S1b, the TTL3 signal is sent from DSPx to DSPy. The adjustment of the frequency of the RF signal generated by the x MHz RF generator will cause the plasma impedance to change.

更應注意，在某些實施例中工具UI系統306藉由纜線314或和纜線314類似的另一纜線將和TTL3訊號相關的資訊(如TTL3訊號的頻率、TTL3訊號在狀態S1期間的工作週期、在TTL3訊號中次狀態S1a出現的時間、在TTL3訊號中次狀態S1b出現的時間等)提供至DSPy，而非自DSPx發送TTL3訊號至DSPy。另一纜線將工具UI系統306連接至DSPy。例如，自工具UI系統306將內含和TTL3訊號相關之資訊的資料檔案提供至DSPy。DSPy包含虛擬鎖相迴路，虛擬鎖相迴路所產生的一訊號係鎖定至TTL3訊號的頻率、且用以調整功率控制器PWRS1y所決定的功率及/或用以調整調整器AFTS1y所決定的頻率。 It should be noted that in some embodiments, the tool UI system 306 uses the cable 314 or another cable similar to the cable 314 to obtain information related to the TTL3 signal (such as the frequency of the TTL3 signal, and the TTL3 signal during the state S1). The duty cycle, the time when the secondary state S1a appears in the TTL3 signal, the time when the secondary state S1b appears in the TTL3 signal, etc.) are provided to DSPy instead of sending the TTL3 signal from DSPx to DSPy. Another cable connects the tool UI system 306 to DSPy. For example, the self-tool UI system 306 provides a data file containing information related to the TTL3 signal to DSPy. DSPy includes a virtual phase-locked loop. A signal generated by the virtual phase-locked loop is locked to the frequency of the TTL3 signal and used to adjust the power determined by the power controller PWRS1y and/or adjust the frequency determined by the regulator AFTS1y.

阻抗匹配電路302匹配負載與源的阻抗，以從在TTL3訊號的次狀態S1b與TTL1時脈訊號的狀態S1期間自x MHz RF產生器所接收的RF訊號以及從在狀態S1期間自y MHz RF產生器所接收的RF訊號產生經修改的RF訊號。例如，阻抗匹配電路302在TTL3訊號的次狀態S1b與TTL1時脈訊號的狀態S1期間產生對應至TTL3訊號之次狀態S1b與TTL1時脈訊號之狀態S1之部分經修改的RF訊號。在TTL3訊號的次狀態S1b與TTL1時脈訊號的狀態S1期間所產生之經修改的RF訊號係藉由RF傳輸線312而發送至夾頭314的下電極。上電極316包含一或多個耦合至中央氣體饋送件(未顯示)的氣體入口(如孔洞等)。中央氣體饋送件自氣體儲槽(未顯示)接收一或多種製程氣體。製程氣體的實例包含含氧氣體，如O2。製程氣體的其他實例包含含氟氣體，如四氟甲烷、六氟化硫、六氟乙烷(C2F6)等。上電極316係接地。夾頭314係藉由RF傳輸線312、阻抗匹配電路302及RF纜線308耦合至x MHz RF產生器。又，夾頭314係藉由RF傳輸線312、阻抗匹配電路302及RF纜線310耦合至y MHz RF產生器。 The impedance matching circuit 302 matches the impedance of the load and the source, so that the RF signal received from the x MHz RF generator during the sub-state S1b of the TTL3 signal and the state S1 of the TTL1 clock signal and from the y MHz RF signal during the state S1 The RF signal received by the generator generates a modified RF signal. For example, the impedance matching circuit 302 generates a modified RF signal corresponding to the sub-state S1b of the TTL3 signal and the state S1 of the TTL1 clock signal during the sub-state S1b of the TTL3 signal and the state S1 of the TTL1 clock signal. The modified RF signal generated during the sub-state S1b of the TTL3 signal and the state S1 of the TTL1 clock signal is sent to the lower electrode of the chuck 314 through the RF transmission line 312. The upper electrode 316 includes one or more gas inlets (such as holes, etc.) coupled to a central gas feeder (not shown). The central gas feeder receives one or more process gases from a gas storage tank (not shown). Examples of process gases include oxygen-containing gas, such as O 2 . Other examples of process gases include fluorine-containing gases, such as tetrafluoromethane, sulfur hexafluoride, hexafluoroethane (C 2 F 6 ), and the like. The upper electrode 316 is grounded. The chuck 314 is coupled to the x MHz RF generator through the RF transmission line 312, the impedance matching circuit 302, and the RF cable 308. In addition, the chuck 314 is coupled to the y MHz RF generator through the RF transmission line 312, the impedance matching circuit 302, and the RF cable 310.

在某些實施例中，當在上電極316與夾頭314之間供給製程氣體且當x MHz RF產生器及/或y MHz RF產生器藉由阻抗匹配電路302與RF傳輸線312將次狀態S1b的RF訊號提供至夾頭314時，電漿室304內電漿的阻抗會受到影響，如增加、減少等。在TTL3訊號的次狀態S1b與TTL1時脈訊號的狀態S1期間受到影響的電漿具有電漿離子的離子能量。在TTL3訊號的次狀態S1b與TTL1時脈訊號的狀態S1期間的離子能量係用以增加相較於狀態S0或次狀態S1a期間之沉積率的沉積率、或用以在狀態S0期間進行蝕刻而非進行沉積、或用以在狀態S0期間蝕刻晶圓318而非不處理晶圓318、或用以降低相較於次狀態S1a期間之蝕刻率的蝕刻率、或用以在次狀態S1a期間進行沉積相較於進行蝕刻。 In some embodiments, when the process gas is supplied between the upper electrode 316 and the chuck 314, and when the x MHz RF generator and/or the y MHz RF generator use the impedance matching circuit 302 and the RF transmission line 312 to change the state S1b When the RF signal is provided to the chuck 314, the impedance of the plasma in the plasma chamber 304 will be affected, such as increase or decrease. The plasma affected during the sub-state S1b of the TTL3 signal and the state S1 of the TTL1 clock signal has the ion energy of the plasma ion. The ion energy during the sub-state S1b of the TTL3 signal and the state S1 of the TTL1 clock signal is used to increase the deposition rate compared to the deposition rate during the state S0 or the sub-state S1a, or to perform etching during the state S0. Not for deposition, or for etching the wafer 318 during the state S0 instead of processing the wafer 318, or for reducing the etching rate compared to the etching rate during the sub-state S1a, or for performing during the sub-state S1a Deposition is compared to etching.

又，在TTL3訊號的次狀態S1a與TTL1訊號的狀態S1期間，DSPx將數位脈動訊號TTL3與時脈訊號TTL1提供予x MHz RF產生器的功率控制器PWRS1ax。例如，DSPx將針對次狀態S1a之一部分數位脈動訊號TTL3及針對狀態S1的時脈訊號TTL1提供予功率控制器PWRS1ax。在接收到次狀態S1a的數位脈動訊號TTL3與狀態S1的時脈訊號TTL1後，功率控制器PWRS1ax決定或辨識欲被x MHz RF產生器所產生之RF訊號的功率位準。對應至TTL3訊號之次狀態S1a與時脈訊號TTL1之狀態S1之RF訊號的功率位準係儲存在功率控制器PWRS1ax的記憶體裝置中。在數位脈動訊號TTL3的次狀態S1a與時脈訊號TTL1的狀態S1期間將功率位準提供予RF電源322。 In addition, during the sub-state S1a of the TTL3 signal and the state S1 of the TTL1 signal, the DSPx provides the digital pulsation signal TTL3 and the clock signal TTL1 to the power controller PWRS1ax of the x MHz RF generator. For example, the DSPx provides a part of the digital pulsation signal TTL3 for the sub-state S1a and the clock signal TTL1 for the state S1 to the power controller PWRS1ax. After receiving the digital pulsation signal TTL3 of the sub-state S1a and the clock signal TTL1 of the state S1, the power controller PWRS1ax determines or recognizes the power level of the RF signal to be generated by the x MHz RF generator. The power level of the RF signal corresponding to the secondary state S1a of the TTL3 signal and the state S1 of the clock signal TTL1 is stored in the memory device of the power controller PWRS1ax. The power level is provided to the RF power source 322 during the sub-state S1a of the digital pulse signal TTL3 and the state S1 of the clock signal TTL1.

又，在TTL3訊號的次狀態S1a與TTL1訊號的狀態S1期間，DSPx將數位脈動訊號TTL3與時脈訊號TTL1提供至x MHz RF產生器的調整器AFTS1ax。在接收到次狀態S1a的數位脈動訊號TTL3與狀態S1的時脈訊號TTL1後，頻率控制器AFTS1ax決定或辨識對應至數位脈動訊號TTL3之次狀態S1a與時脈訊號TTL1之狀態S1之一射頻頻率的量或一系列射頻頻率的複數量。例如，數位脈動訊號TTL3之次狀態S1a、時脈訊號TTL1之狀態S1與一射頻頻率的量或一系列射頻頻率之複數量之間的對應係儲存在調整器AFTS1ax的記憶體裝置中。 In addition, during the sub-state S1a of the TTL3 signal and the state S1 of the TTL1 signal, the DSPx provides the digital pulsation signal TTL3 and the clock signal TTL1 to the adjuster AFTS1ax of the x MHz RF generator. After receiving the digital pulse signal TTL3 of the sub-state S1a and the clock signal TTL1 of the state S1, the frequency controller AFTS1ax determines or identifies one of the radio frequency frequencies corresponding to the sub-state S1a of the digital pulse signal TTL3 and the state S1 of the clock signal TTL1 The quantity or the complex quantity of a series of radio frequencies. For example, the correspondence between the secondary state S1a of the digital pulsation signal TTL3, the state S1 of the clock signal TTL1 and the quantity of a radio frequency or a complex quantity of a series of radio frequencies is stored in the memory device of the adjuster AFTS1ax.

調整器AFTS1ax將該射頻頻率的量或該系列射頻頻率的複數量提供予RF電源322。在接收到數位脈動訊號TTL3之次狀態S1a與時脈訊號TTL1之狀態S1的該功率位準以及在接收到數位脈動訊號TTL3之次狀態S1a與時脈訊號TTL1之狀態S1的該射頻頻率的量或該系列射頻頻率的複數量之後，RF電源322產生具有數位脈動訊號TTL3之次狀態S1a與時脈訊號TTL1之狀態S1的該功率位準以及該射頻頻率的量或該系列射頻頻率的複數量的RF訊號。 The adjuster AFTS1ax provides the amount of the radio frequency or the complex amount of the series of radio frequencies to the RF power source 322. The power level in the secondary state S1a of the digital pulsation signal TTL3 and the state S1 of the clock signal TTL1 and the amount of the radio frequency in the secondary state S1a of the digital pulsation signal TTL3 and the state S1 of the clock signal TTL1 Or after the complex number of the series of radio frequencies, the RF power supply 322 generates the power level with the secondary state S1a of the digital pulsation signal TTL3 and the state S1 of the clock signal TTL1 and the amount of the radio frequency or the complex amount of the series of radio frequencies RF signal.

阻抗匹配電路302接收x MHz RF產生器針對數位脈動訊號TTL3之次狀態S1a與時脈訊號TTL1之狀態S1所產生的RF訊號並接收y MHz RF產生器針對狀態S1所產生的RF訊號，並且匹配次狀態S1a期間負載與源的阻抗以從次狀態S1a的RF訊號產生經修改的RF訊號。例如，阻抗匹配電路302在次狀態S1a期間產生對應至TTL3訊號之次狀態S1a與TTL1時脈訊號的狀態S1之部分經修改的RF訊號。與數位脈動訊號TTL3的次狀態S1a與時脈訊號TTL1的狀態S1相關之經修改的RF訊號係藉由RF傳輸線312而發送至夾頭314。 The impedance matching circuit 302 receives the RF signal generated by the x MHz RF generator for the secondary state S1a of the digital pulsation signal TTL3 and the state S1 of the clock signal TTL1, and receives the RF signal generated by the y MHz RF generator for the state S1, and matches The impedance of the load and the source during the sub-state S1a generates a modified RF signal from the RF signal in the sub-state S1a. For example, during the sub-state S1a, the impedance matching circuit 302 generates a modified RF signal corresponding to the sub-state S1a of the TTL3 signal and the state S1 of the TTL1 clock signal. The modified RF signal related to the sub-state S1a of the digital pulse signal TTL3 and the state S1 of the clock signal TTL1 is sent to the chuck 314 through the RF transmission line 312.

在接收到對應至數位脈動訊號TTL3之次狀態S1a與時脈訊號TTL1之狀態S1之經修改的RF訊號後，電漿室304內的電漿離子受到激發以進行處理，如增加相較於狀態S0或次狀態S1b期間之蝕刻率的蝕刻率、減少相較於狀態S0或次狀態S1b期間之沉積率的沉積率、增加相較於狀態S0或次狀態S1b期間之清理率的清理率、增加相較於狀態S0或次狀態S1b期間在晶圓318上之濺射率的濺射率。 After receiving the modified RF signal corresponding to the secondary state S1a of the digital pulse signal TTL3 and the state S1 of the clock signal TTL1, the plasma ions in the plasma chamber 304 are excited for processing, such as increasing compared to the state The etch rate of the etching rate during the S0 or sub-state S1b, the reduction of the deposition rate compared to the deposition rate during the state S0 or the sub-state S1b, the increase of the cleaning rate compared to the cleaning rate during the state S0 or the sub-state S1b, the increase The sputtering rate compared to the sputtering rate on the wafer 318 during the state S0 or the substate S1b.

在狀態S0期間，DSPx提供數位脈動訊號TTL3予x MHz RF產生器的功率控制器PWRS0x。例如，DSPx將對應至狀態S0的一部分數位脈動訊號TTL3發送至功率控制器PWRS0x。應注意，在狀態S0期間，TTL3訊號係與TTL1訊號相同。在接收到與狀態S0相關之數位脈動訊號TTL3後，功率控制器PWRS0x決定或辨識狀態S0的功率位準。例如，對應至狀態S0的功率位準係儲存在功率控制器PWRS0x的記憶體裝置中並自記憶體裝置受到辨識。功率位準係由功率控制器PWRS0x提供予RF電源322。在接收到狀態S0的功率位準後，RF電源322產生具有和狀態S0相關之功率位準的RF訊號。 During the state S0, DSPx provides a digital pulsation signal TTL3 to the power controller PWRS0x of the x MHz RF generator. For example, DSPx sends a part of the digital pulsation signal TTL3 corresponding to the state S0 to the power controller PWRS0x. It should be noted that during the state S0, the TTL3 signal is the same as the TTL1 signal. After receiving the digital pulse signal TTL3 related to the state S0, the power controller PWRS0x determines or recognizes the power level of the state S0. For example, the power level corresponding to the state S0 is stored in the memory device of the power controller PWRS0x and recognized from the memory device. The power level is provided to the RF power source 322 by the power controller PWRS0x. After receiving the power level of the state S0, the RF power source 322 generates an RF signal having a power level related to the state S0.

又，在狀態S0期間，DSPx將數位脈動訊號TTL3提供予x MHz RF產生器的調整器AFTS0x。例如，DSPx將具有狀態S0的一部分數位脈動訊號TTL3提供予調整器AFTS0x。在接收到對應至狀態S0的數位脈動訊號TTL3後，調整器AFTS0x決定或辨識一射頻頻率的量或一系列射頻頻率的複數量。例如，調整器AFTS0x自調整器AFTS0x的記憶體裝置辨識該射頻頻率的量或該系列射頻頻率的複數量。調整器AFTS0x將該射頻頻率的量或該系列射頻頻率的複數量提供予RF電源322。 In addition, during the state S0, the DSPx provides the digital pulsation signal TTL3 to the adjuster AFTS0x of the x MHz RF generator. For example, the DSPx provides a part of the digital pulsation signal TTL3 with the state S0 to the adjuster AFTS0x. After receiving the digital pulsation signal TTL3 corresponding to the state S0, the adjuster AFTS0x determines or recognizes the amount of a radio frequency or a series of complex amounts of radio frequency. For example, the memory device of the AFTS0x self-adjuster AFTS0x recognizes the amount of the radio frequency or the complex number of the series of radio frequencies. The adjuster AFTS0x provides the amount of the radio frequency or the complex amount of the series of radio frequencies to the RF power source 322.

在狀態S0期間，在接收到與狀態S0相關之該功率的量以及該射頻頻率的量或該系列射頻頻率的複數量後，RF電源322產生對應至狀態S0的RF訊號。對應至狀態S0的RF訊號具有與狀態S0相關之該功率位準以及該射頻頻率的量或該系列射頻頻率的複數量。 During the state S0, after receiving the amount of the power and the amount of the radio frequency frequency or the complex number of the series of radio frequencies related to the state S0, the RF power source 322 generates an RF signal corresponding to the state S0. The RF signal corresponding to the state S0 has the power level and the amount of the radio frequency or the complex amount of the series of radio frequencies related to the state S0.

又，在狀態S0期間，DSPy提供時脈訊號TTL1予y MHz RF產生器的功率控制器PWRS0y及調整器AFTS0y。例如，DSPy發送具有狀態S0的一部分時脈訊號TTL1予功率控制器PWRS0x及調整器AFTS0y。在接收到和狀態S0相關的時脈訊號TTL1之後，功率控制器PWRS0y決定或辨識y MHz RF產生器欲產生之RF訊號的功率位準，且調整器AFTS0y決定或辨識RF訊號的一射頻頻率的量或一系列射頻頻率的複數量。功率控制器PWRS0y將和狀態S0相關的功率位準提供予RF電源324，且調整器AFTS0y將該射頻頻率的量或該系列射頻頻率的複數量提供予RF電源324。在自功率控制器PWRS0y接收到狀態S0的功率位準並自調整器AFTS0y接收到該射頻頻率的量或該系列射頻頻率的複數量之後，RF電源324產生具有該功率位準及該射頻頻率之量或該系列射頻頻率之複數量的RF訊號。 Also, during the state S0, DSPy provides the clock signal TTL1 to the power controller PWRS0y of the y MHz RF generator and the regulator AFTS0y. For example, DSPy sends a part of the clock signal TTL1 with the state S0 to the power controller PWRS0x and the regulator AFTS0y. After receiving the clock signal TTL1 related to the state S0, the power controller PWRS0y determines or recognizes the power level of the RF signal to be generated by the y MHz RF generator, and the adjuster AFTS0y determines or recognizes the RF frequency of the RF signal. Quantities or complex quantities of a series of radio frequencies. The power controller PWRS0y provides the power level related to the state S0 to the RF power source 324, and the adjuster AFTS0y provides the RF power source 324 with the amount of the radio frequency frequency or the complex amount of the series of radio frequency frequencies. After receiving the power level of state S0 from the power controller PWRS0y and the amount of the radio frequency or the complex number of the series of radio frequencies from the adjuster AFTS0y, the RF power source 324 generates the power level and the radio frequency. The amount or the complex amount of the RF signal of the series of radio frequencies.

阻抗匹配電路302接收RF電源322在狀態S0期間藉由RF纜線308所供給之RF訊號、並接收RF電源324在狀態S0期間藉由RF纜線310所供給之RF訊號，且基於此些RF訊號匹配負載與源的阻抗以產生狀態S0之經修改的RF訊號。與狀態S0相關之經修改的RF訊號係藉由RF傳輸線312而提供予夾頭304。 The impedance matching circuit 302 receives the RF signal supplied by the RF power supply 322 via the RF cable 308 during the state S0, and receives the RF signal supplied by the RF power supply 324 via the RF cable 310 during the state S0, and is based on these RF signals. The signal matches the impedance of the load and source to produce a modified RF signal in state S0. The modified RF signal related to the state S0 is provided to the chuck 304 through the RF transmission line 312.

在某些實施例中，相較於次狀態S1a或次狀態S1b期間晶圓318上的沉積率，對應至狀態S0之經修改的RF訊號能增加在晶圓318上沉積材料的沉積率。在各種實施例中，相較於次狀態S1a或次狀態S1b期間晶圓318之膜層或晶圓318上之膜層的蝕刻率，對應至狀態S0之經修改的RF訊號能減少晶圓318之膜層或晶圓318上之膜層的蝕刻率。在數個實施例中，對應至狀態S0之經修改的RF訊號係用以在晶圓318上沉積材料，在次狀態S1a期間所產生之經修改的RF訊號或在次狀態S1b期間所產生之經修改的RF訊號係用以蝕刻晶圓318的膜層或晶圓318上的膜層。在某些實施例中，在狀態S0期間所產生之一部分經修改的RF訊號係用以在電漿室304內產生如擊發電漿等。例如，當將製程氣體供給至電漿室304且由x與y MHz RF產生器中的一或多者供給一或多個RF訊號時，製程氣體會受到點燃而在電漿室304內產生電漿。 In some embodiments, the modified RF signal corresponding to the state S0 can increase the deposition rate of the deposited material on the wafer 318 compared to the deposition rate on the wafer 318 during the substate S1a or the substate S1b. In various embodiments, the modified RF signal corresponding to the state S0 can reduce the wafer 318 compared to the etching rate of the film layer of the wafer 318 or the film layer on the wafer 318 during the sub-state S1a or the sub-state S1b. The etching rate of the film layer or the film layer on the wafer 318. In several embodiments, the modified RF signal corresponding to the state S0 is used to deposit material on the wafer 318, the modified RF signal generated during the sub-state S1a or the modified RF signal generated during the sub-state S1b The modified RF signal is used to etch the film layer of the wafer 318 or the film layer on the wafer 318. In some embodiments, a part of the modified RF signal generated during the state S0 is used to generate, for example, a plasma generator in the plasma chamber 304. For example, when the process gas is supplied to the plasma chamber 304 and one or more RF signals are supplied from one or more of the x and y MHz RF generators, the process gas will be ignited to generate electricity in the plasma chamber 304 Pulp.

在各種實施例中，x MHz RF產生器的功率控制器PWRS0x、PWRS1ax與PWRS1bx係藉由開關(如多工器等)而連接至DSPx的單一相同輸出，而非將x MHz RF產生器的每一功率控制器PWRS0x、PWRS1ax與PWRS1bx耦合至DSPx的不同輸出。開關在狀態S0期間將DSPx連接至功率控制器PWRS0x，在次狀態S1a期間將DSPx連接至功率控制器PWRS1ax，在次狀態S1b期間將DSPx連接至功率控制器PWRS1bx。 In various embodiments, the power controllers PWRS0x, PWRS1ax, and PWRS1bx of the x MHz RF generator are connected to a single identical output of the DSPx through switches (such as multiplexers, etc.), instead of connecting each of the x MHz RF generators. A power controller PWRS0x, PWRS1ax and PWRS1bx are coupled to different outputs of DSPx. The switch connects DSPx to the power controller PWRS0x during the state S0, connects DSPx to the power controller PWRS1ax during the secondary state S1a, and connects DSPx to the power controller PWRS1bx during the secondary state S1b.

類似地，在數個實施例中，y MHz RF產生器的功率控制器PWRS0y與PWRS1y係藉由開關而連接至DSPy的單一相同輸出，而非將y MHz RF產生器的每一功率控制器PWRS0y與PWRS1y耦合至DSPy的不同輸出。開關在狀態S0期間將DSPy連接至功率控制器PWRS0y，在狀態S1期間將DSPy連接至功率控制器PWRS1y。 Similarly, in several embodiments, the power controllers PWRS0y and PWRS1y of the y MHz RF generator are connected to the same single output of DSPy by switches, instead of connecting each power controller PWRS0y of the y MHz RF generator. It is coupled to a different output of DSPy with PWRS1y. The switch connects DSPy to the power controller PWRS0y during the state S0, and connects DSPy to the power controller PWRS1y during the state S1.

又，在各種實施例中，x MHz RF產生器的調整器AFTS0x、AFTS1ax與AFTS1bx係藉由開關(如多工器等)而連接至DSPx的單一相同輸出而非將x MHz RF產生器的每一調整器AFTS0x、AFTS1ax與AFTS1bx耦合至DSPx的不同輸出。開關在狀態S0期間將DSPx連接至調整器AFTS0x，在次狀態S1a期間將DSPx連接至調整器AFTS1ax，在次狀態S1b期間將DSPx連接至調整器AFTS1bx。 Furthermore, in various embodiments, the adjusters AFTS0x, AFTS1ax, and AFTS1bx of the x MHz RF generator are connected to a single output of the DSPx through switches (such as multiplexers, etc.) instead of connecting each of the x MHz RF generators. A regulator AFTS0x, AFTS1ax and AFTS1bx are coupled to different outputs of DSPx. The switch connects DSPx to the regulator AFTS0x during the state S0, connects DSPx to the regulator AFTS1ax during the secondary state S1a, and connects DSPx to the regulator AFTS1bx during the secondary state S1b.

類似地，在數個實施例中，y MHz RF產生器的調整器AFTS0y與AFTS1y係藉由開關而連接至DSPy的單一相同輸出，而非將y MHz RF產生器的每一調整器AFTS0y與AFTS1y耦合至DSPy的不同輸出。開關在狀態S0期間將DSPy連接至調整器AFTS0y，在狀態S1期間將DSPy連接至調整器AFTS1y。 Similarly, in several embodiments, the adjusters AFTS0y and AFTS1y of the y MHz RF generator are connected to a single same output of DSPy by switches, instead of connecting each adjuster AFTS0y and AFTS1y of the y MHz RF generator. Coupling to different outputs of DSPy. The switch connects DSPy to the regulator AFTS0y during the state S0, and connects DSPy to the regulator AFTS1y during the state S1.

圖3B為系統350之一實施例，系統350係用以控制狀態S1期間的離子能量。系統350包含x MHz RF產生器、y MHz RF產生器、阻抗匹配電路302、電漿室304及工具UI系統307。除了在系統350中DSPx產生時脈訊號TTL1與數位脈動訊號TTL3外，系統350以類似於系統300(圖3A)的方式操作。x MHz RF產生器為主RF產生器而y MHz RF產生器為副RF產生器。時脈訊號TTL1與TTL3訊號係自x MHz RF產生器的DSPx藉由纜線而送至y MHz RF產生器的DSPy。 FIG. 3B shows an embodiment of the system 350, which is used to control the ion energy during the state S1. The system 350 includes an x MHz RF generator, a y MHz RF generator, an impedance matching circuit 302, a plasma chamber 304, and a tool UI system 307. Except that the DSPx generates the clock signal TTL1 and the digital pulse signal TTL3 in the system 350, the system 350 operates in a manner similar to the system 300 (FIG. 3A). The x MHz RF generator is the main RF generator and the y MHz RF generator is the secondary RF generator. The clock signals TTL1 and TTL3 are sent from the DSPx of the x MHz RF generator to the DSPy of the y MHz RF generator via a cable.

工具UI系統307將包含效能參數的對應配方提供予x與y MHz RF產生器每一者。對應的配方係儲存在DSPx與DSPy每一者中。 The tool UI system 307 provides the corresponding formula including the performance parameter to each of the x and y MHz RF generators. The corresponding recipe is stored in each of DSPx and DSPy.

在某些實施例中，x MHz RF產生器所供給之RF訊號的功率的頻率係與訊號202(圖2A)或訊號212(圖2B)或訊號222(圖2C)或訊號232(圖2D)的頻率相同。 In some embodiments, the frequency of the RF signal power supplied by the x MHz RF generator is the same as signal 202 (Figure 2A) or signal 212 (Figure 2B) or signal 222 (Figure 2C) or signal 232 (Figure 2D) The frequency is the same.

在各種實施例中，將和TTL3訊號相關的訊息自DSPx藉由將DSPx連接至DSPy的纜線提供予DSPy、而非將TTL3訊號自DSPx藉由纜線發送至DSPy。例如，自DSPx將一資料檔案內和TTL3訊號相關的訊息提供予DSPy。DSPy包含虛擬鎖相迴路而可產生鎖定至TTL3訊號之頻率的訊號，此訊號係用以調整功率控制器PWRS1y所決定的功率及/或調整器AFTS1y所決定的頻率。 In various embodiments, the information related to the TTL3 signal is provided from DSPx to DSPy through a cable connecting DSPx to DSPy, instead of sending the TTL3 signal from DSPx to DSPy through the cable. For example, DSPx provides information related to TTL3 signals in a data file to DSPy. DSPy includes a virtual phase-locked loop to generate a signal locked to the frequency of the TTL3 signal. This signal is used to adjust the power determined by the power controller PWRS1y and/or the frequency determined by the regulator AFTS1y.

圖4A為圖400的一實施例，圖400係用以例示操作在兩狀態S1與S0的x MHz RF產生器及操作在狀態S1、次狀態S0a與次狀態S0b的y MHz RF產生器。圖400包含自x MHz RF產生器所供給之RF訊號所產生的經輸送的功率訊號402及自y MHz RF產生器所供給之RF訊號所產生的經輸送的功率訊號404。圖400繪示經輸送的功率對時間的關係。經輸送的功率訊號404所具有的頻率係與數位脈動訊號TTL3所具有的頻率相同。 FIG. 4A is an embodiment of FIG. 400. FIG. 400 is used to illustrate the x MHz RF generator operating in two states S1 and S0 and the y MHz RF generator operating in state S1, sub-state S0a, and sub-state S0b. The graph 400 includes the delivered power signal 402 generated from the RF signal supplied by the x MHz RF generator and the delivered power signal 404 generated from the RF signal supplied by the y MHz RF generator. Graph 400 shows the relationship of delivered power versus time. The frequency of the transmitted power signal 404 is the same as the frequency of the digital pulsation signal TTL3.

在經輸送的功率訊號402處於狀態S0的時間期間，經輸送的功率訊號404在次狀態S0a與S0b之間轉換，例如交替。在經輸送的功率訊號402處於狀態S1的時間期間，經輸送的功率訊號404不會在兩狀態之間轉換。在經輸送的功率訊號402處於狀態S1的時間期間，經輸送的功率訊號404亦處於狀態S1。 During the time that the delivered power signal 402 is in the state S0, the delivered power signal 404 switches between the sub-states S0a and S0b, for example, alternately. During the time that the transmitted power signal 402 is in the state S1, the transmitted power signal 404 will not switch between the two states. During the time that the transmitted power signal 402 is in the state S1, the transmitted power signal 404 is also in the state S1.

經輸送的功率訊號402在狀態S0期間的功率位準(如零功率位準、小於5瓦的功率位準等)能促進沉積率的增加、或蝕刻率的減少、或濺射率的減 少等。經輸送的功率訊號402在狀態S0期間的功率位準係小於經輸送的功率訊號402在狀態S1期間的功率位準。 The power level of the delivered power signal 402 during the state S0 (such as zero power level, power level less than 5 watts, etc.) can promote an increase in the deposition rate, or a decrease in the etching rate, or a decrease in the sputtering rate. And less. The power level of the transmitted power signal 402 during the state S0 is less than the power level of the transmitted power signal 402 during the state S1.

又，在經輸送的功率訊號402的狀態S0期間經輸送的功率訊號404在次狀態S0a與S0b之間的轉換能促進對電漿室304(圖3A)中所產生之電漿的阻抗的控制(如增加、減少等)。阻抗的控制能增加電漿的穩定度。例如，當x MHz RF產生器產生RF訊號以更進一步地將經輸送的功率訊號402提供予電漿室304以達到粗略的蝕刻率時，y MHz RF產生器產生RF訊號以更進一步地提供在次狀態S0a與S0b之間轉換的經輸送的功率訊號404。藉著進行經輸送的功率訊號404在次狀態S0a與S0b之間的轉換可達到精細的蝕刻率。又例如，當x MHz RF產生器產生RF訊號以更進一步地將經輸送的功率訊號402提供至電漿室304以達到粗略的沉積率時，y MHz RF產生器產生RF訊號以更進一步地提供在次狀態S0a與S0b之間轉換的經輸送的功率訊號404。藉著進行經輸送的功率訊號404在次狀態S0a與S0b之間的轉換可達到精細的沉積率。又例如，當x MHz RF產生器產生RF訊號以更進一步地將經輸送的功率訊號402提供至電漿室304以達到粗略的濺射率時，y MHz RF產生器產生RF訊號以更進一步地提供在次狀態S0a與S0b之間轉換的經輸送的功率訊號404。藉著進行經輸送的功率訊號404在次狀態S0a與S0b之間的轉換可達到精細的濺射率。 In addition, the transition of the delivered power signal 404 between the sub-states S0a and S0b during the state S0 of the delivered power signal 402 can facilitate the control of the impedance of the plasma generated in the plasma chamber 304 (FIG. 3A) (Such as increase, decrease, etc.). The impedance control can increase the stability of the plasma. For example, when the x MHz RF generator generates an RF signal to further provide the transmitted power signal 402 to the plasma chamber 304 to achieve a rough etching rate, the y MHz RF generator generates an RF signal to further provide The delivered power signal 404 transitioning between the sub-states S0a and S0b. A fine etching rate can be achieved by performing the transition of the transmitted power signal 404 between the sub-states S0a and S0b. For another example, when the x MHz RF generator generates an RF signal to further provide the transmitted power signal 402 to the plasma chamber 304 to achieve a rough deposition rate, the y MHz RF generator generates an RF signal to further provide The delivered power signal 404 transitions between the sub-states S0a and S0b. A fine deposition rate can be achieved by converting the delivered power signal 404 between the sub-states S0a and S0b. For another example, when the x MHz RF generator generates the RF signal to further provide the transmitted power signal 402 to the plasma chamber 304 to achieve a rough sputtering rate, the y MHz RF generator generates the RF signal to further A delivered power signal 404 that switches between the sub-states S0a and S0b is provided. A fine sputtering rate can be achieved by converting the delivered power signal 404 between the sub-states S0a and S0b.

在某些實施例中，粗略的速率比精細的速率具有更大的範圍。例如，粗略的蝕刻率具有介於D埃/分鐘至E埃/分鐘之間的蝕刻率範圍，而精細的蝕刻率具有介於F埃/分鐘至G埃/分鐘之間的蝕刻率範圍。介於F埃/分鐘至G埃/分鐘之間的範圍係落在介於D埃/分鐘至E埃/分鐘之間的範圍內。在各種實施例中， 介於F埃/分鐘至G埃/分鐘之間的範圍係小於介於D埃/分鐘至E埃/分鐘之間的範圍。 In some embodiments, the coarse rate has a larger range than the fine rate. For example, a rough etching rate has an etching rate range between D angstroms/minute to E angstroms/minute, and a fine etching rate has an etching rate range between F angstroms/minute to G angstroms/minute. The range between F angstroms/minute and G angstroms/minute falls within the range between D angstroms/minute and E angstroms/minute. In various embodiments, The range between F angstroms/minute and G angstroms/minute is smaller than the range between D angstroms/minute and E angstroms/minute.

在各種實施例中，在經輸送的功率訊號404的次狀態S0b期間，電漿室304(圖3A)內之離子能量的量係少於在經輸送的功率訊號404之次狀態S0a期間電漿室304內之離子能量的量。y MHz RF產生器所產生之RF訊號所產生之較少量的離子能量能促進對電漿室304內電漿的控制，以更進一步地達到速率(蝕刻率、沉積率、清理率、濺射率等)的重覆性並達到電漿的穩定度。又，在經輸送的功率訊號402處於狀態S0之時間期間內產生較少量的離子能量，使x與y MHz RF產生器所產生之RF訊號所供給的大部分能量能朝向產生器反射。大部分功率的反射能改善電漿室304內的電漿穩定度。 In various embodiments, during the secondary state S0b of the delivered power signal 404, the amount of ion energy in the plasma chamber 304 (FIG. 3A) is less than that during the secondary state S0a of the delivered power signal 404. The amount of ion energy in the chamber 304. The relatively small amount of ion energy generated by the RF signal generated by the y MHz RF generator can facilitate the control of the plasma in the plasma chamber 304 to achieve a further rate (etch rate, deposition rate, cleaning rate, sputtering rate) Rate, etc.) repeatability and achieve plasma stability. In addition, during the time that the transmitted power signal 402 is in the state S0, a relatively small amount of ion energy is generated, so that most of the energy supplied by the RF signal generated by the x and y MHz RF generators can be reflected toward the generator. The reflection of most of the power can improve the plasma stability in the plasma chamber 304.

圖4B為圖410的一實施例，圖410係用以例示基於y MHz RF產生器所產生之RF訊號所衍生之經輸送的功率訊號412的位準。圖410繪示經輸送之功率對時間的關係。在次狀態S0a期間經輸送的功率訊號412所具有的位準係高於在次狀態S0b期間經輸送的功率訊號404(圖4A)的位準。經輸送的功率訊號412所具有的頻率係與數位脈動訊號TTL3的頻率相同。 FIG. 4B is an embodiment of FIG. 410, which is used to illustrate the level of the transmitted power signal 412 derived from the RF signal generated by the y MHz RF generator. Graph 410 shows the relationship of delivered power versus time. The power signal 412 delivered during the sub-state S0a has a higher level than the power signal 404 delivered during the sub-state S0b (FIG. 4A). The frequency of the transmitted power signal 412 is the same as the frequency of the digital pulsation signal TTL3.

在各種實施例中，在次狀態S0a期間經輸送的功率訊號412所具有的位準係高於經輸送的功率訊號404的位準。在各種實施例中，在次狀態S0a期間經輸送的功率訊號412的位準係低於經輸送的功率訊號404的位準。 In various embodiments, the level of the transmitted power signal 412 during the sub-state S0a is higher than the level of the transmitted power signal 404. In various embodiments, the level of the delivered power signal 412 during the sub-state S0a is lower than the level of the delivered power signal 404.

圖4C為圖420的一實施例，圖420係用以例示基於y MHz RF產生器所產生之RF訊號所衍生之經輸送的功率訊號422的位準。圖420繪示經輸送之功率對時間的關係。在次狀態S0b期間經輸送的功率訊號422所具有的位準係低於經輸送的功率訊號404(圖4A)在次狀態S0a期間所具有的位準。又，在次狀態S0a 期間經輸送的功率訊號422所具有的位準係低於經輸送的功率訊號422在狀態S1期間所具有的位準。經輸送的功率訊號422所具有的頻率係與數位脈動訊號TTL3的頻率相同。 FIG. 4C is an embodiment of FIG. 420, which is used to illustrate the level of the transmitted power signal 422 derived from the RF signal generated by the y MHz RF generator. Graph 420 shows the relationship of delivered power versus time. The level of the transmitted power signal 422 during the sub-state S0b is lower than the level of the transmitted power signal 404 (FIG. 4A) during the sub-state S0a. Also, in the sub-state S0a The level of the transmitted power signal 422 during the period is lower than the level of the transmitted power signal 422 during the state S1. The frequency of the transmitted power signal 422 is the same as the frequency of the digital pulsation signal TTL3.

圖4D為圖430的一實施例，圖430係用以例示對比於圖400(圖4A)中所示的位準使用具有不同位準之經輸送的功率訊號432。經輸送的功率訊號432所具有的頻率係與TTL3的頻率相同。經輸送的功率訊號432為下列者的函數：y MHz RF產生器所供給之RF訊號以及自電漿室304藉由RF傳輸線312、阻抗匹配電路302與RF纜線310(圖3A)朝向y MHz RF產生器反射的RF訊號。經輸送的功率訊號432在次狀態S0a期間的功率位準係低於經輸送的功率訊號404(圖4A)在次狀態S0a期間的功率位準。又，經輸送的功率訊號432在次狀態S0a期間的功率位準係低於經輸送的功率訊號402在狀態S1期間的功率位準。又，經輸送的功率訊號432在次狀態S0b期間的功率位準係高於經輸送的功率訊號402在次狀態S0b期間的功率位準。經輸送的功率訊號432在次狀態S0b期間的功率位準係低於經輸送的功率訊號402在狀態S1期間的功率位準並高於經輸送的功率訊號402在狀態S0期間的功率位準。 FIG. 4D is an embodiment of FIG. 430, which is used to illustrate the use of the transmitted power signal 432 with a different level in comparison with the level shown in FIG. 400 (FIG. 4A). The frequency of the transmitted power signal 432 is the same as that of TTL3. The transmitted power signal 432 is a function of the following: the RF signal supplied by the y MHz RF generator and the RF transmission line 312, the impedance matching circuit 302 and the RF cable 310 (FIG. 3A) from the plasma chamber 304 towards y MHz The RF signal reflected by the RF generator. The power level of the delivered power signal 432 during the sub-state S0a is lower than the power level of the delivered power signal 404 (FIG. 4A) during the sub-state S0a. Furthermore, the power level of the transmitted power signal 432 during the sub-state S0a is lower than the power level of the transmitted power signal 402 during the state S1. Furthermore, the power level of the transmitted power signal 432 during the sub-state S0b is higher than the power level of the transmitted power signal 402 during the sub-state S0b. The power level of the delivered power signal 432 during the sub-state S0b is lower than the power level of the delivered power signal 402 during the state S1 and higher than the power level of the delivered power signal 402 during the state S0.

在各種實施例中，經輸送的功率訊號402在狀態S0期間的功率位準係高於經輸送的功率訊號432在次狀態S0b期間的功率位準。在某些實施例中，經輸送的功率訊號402在狀態S1期間的功率位準係低於經輸送的功率訊號432在次狀態S0a期間的功率位準。 In various embodiments, the power level of the delivered power signal 402 during the state S0 is higher than the power level of the delivered power signal 432 during the sub-state S0b. In some embodiments, the power level of the delivered power signal 402 during the state S1 is lower than the power level of the delivered power signal 432 during the sub-state S0a.

在某些實施例中，狀態S1佔據的時間期間係與次狀態S0a與S0b兩者佔據的時間期間相同。例如，狀態S1佔據時脈訊號TTL1的半個時脈週期，次狀態S0a與S0b佔據剩下的半個時脈週期。在數個實施例中，狀態S1佔據的時間 期間係小於或大於時脈訊號TTL1之半個時脈週期，次狀態S0a與S0b佔據時脈週期的剩餘期間。 In some embodiments, the time period occupied by the state S1 is the same as the time period occupied by both the sub-states S0a and S0b. For example, the state S1 occupies half of the clock cycle of the clock signal TTL1, and the sub-states S0a and S0b occupy the remaining half of the clock cycle. In several embodiments, the time occupied by state S1 The period is less than or greater than half the clock period of the clock signal TTL1, and the sub-states S0a and S0b occupy the remaining period of the clock period.

圖4E為圖440的一實施例，圖440係用以例示狀態S0期間的工作週期係不同於50%的工作週期。圖440繪示60MHz RF產生器所輸送之功率對時間t的關係。經輸送的功率係顯示為脈動訊號442。應注意，訊號442在狀態S0期間的工作週期係大於50%，且狀態S1期間所佔據的時間係等於狀態S0期間所佔據的時間。例如，訊號442在次狀態S0a期間所佔據的時間係多於在次狀態S0b期間所佔據的時間。在某些實施例中，訊號442在狀態S0期間的工作週期係小於50%。例如，經輸送之訊號在次狀態S0a期間所佔據的時間係少於在次狀態S0b期間所佔據的時間。 FIG. 4E is an embodiment of FIG. 440, which is used to illustrate that the duty cycle during the state S0 is different from the 50% duty cycle. Figure 440 shows the power delivered by the 60MHz RF generator versus time t. The transmitted power is displayed as a pulsation signal 442. It should be noted that the duty cycle of the signal 442 during the state S0 is greater than 50%, and the time occupied during the state S1 is equal to the time occupied during the state S0. For example, the time occupied by the signal 442 during the secondary state S0a is more than the time occupied during the secondary state S0b. In some embodiments, the duty cycle of the signal 442 during the state S0 is less than 50%. For example, the time occupied by the transmitted signal during the sub-state S0a is less than the time occupied during the sub-state S0b.

更應注意，每一訊號404、412、422與432(圖4A至4D)在狀態S0期間的工作週期為50%。 It should be noted that the duty cycle of each signal 404, 412, 422, and 432 (FIGS. 4A to 4D) during the state S0 is 50%.

在數個實施例中，y MHz RF產生器所輸送之功率的狀態S0佔據時間係少於或多於y MHz RF產生器所輸送之功率的狀態S1佔據時間。在此些實施例中，經輸送的功率在狀態S0期間的工作週期為50%。 In several embodiments, the occupation time of the state S0 of the power delivered by the y MHz RF generator is less than or more than the occupation time of the state S1 of the power delivered by the y MHz RF generator. In these embodiments, the duty cycle of the delivered power during state S0 is 50%.

在各種實施例中，y MHz RF產生器所輸送之功率的狀態S0佔據時間係少於或多於y MHz RF產生器所輸送之功率的狀態S1佔據時間。在此些實施例中，經輸送的功率在狀態S0期間的工作週期係大於或小於50%。 In various embodiments, the occupancy time of the state S0 of the power delivered by the y MHz RF generator is less than or more than the occupancy time of the state S1 of the power delivered by the y MHz RF generator. In these embodiments, the duty cycle of the delivered power during the state S0 is greater than or less than 50%.

在某些實施例中，TTL訊號所具有之頻率係等於脈動訊號442所具有的頻率。TTL訊號係由產生TTL3訊號的裝置所產生。例如，DSPx自TTL1訊號及調變訊號產生TTL訊號。調變訊號調變TTL1訊號以產生TTL訊號。 In some embodiments, the frequency of the TTL signal is equal to the frequency of the pulsation signal 442. The TTL signal is generated by the device that generates the TTL3 signal. For example, DSPx generates TTL signals from TTL1 signals and modulated signals. The modulation signal modulates the TTL1 signal to generate a TTL signal.

圖5A顯示系統500的一實施例，系統500係用以例示y MHz RF產生器產生具有狀態S1、及次狀態S0a與S0b之RF訊號。系統500包含電漿室304、x MHz RF產生器、y MHz RF產生器及工具UI系統306。工具UI系統306的時脈源將時脈訊號TTL1提供予x MHz RF產生器的DSPx及y MHz RF產生器的DSPy。DSPx基於時脈訊號TTL1產生數位脈動訊號TTL3訊號並將TTL3訊號提供予DSPy。例如，DSPx將具有次狀態S0b之一部分數位脈動訊號TTL3提供予DSPy。 FIG. 5A shows an embodiment of a system 500. The system 500 is used to illustrate that a y MHz RF generator generates an RF signal having states S1, and substates S0a and S0b. The system 500 includes a plasma chamber 304, an x MHz RF generator, a y MHz RF generator, and a tool UI system 306. The clock source of the tool UI system 306 provides the clock signal TTL1 to DSPx of the x MHz RF generator and DSPy of the y MHz RF generator. DSPx generates a digital pulse signal TTL3 signal based on the clock signal TTL1 and provides the TTL3 signal to DSPy. For example, DSPx provides a part of the digital pulsation signal TTL3 with the sub-state S0b to DSPy.

在某些實施例中，DSPy基於時脈訊號TTL1產生TTL3訊號，而非DSPx產生TTL3訊號並將TTL3訊號提供予DSPy。例如，DSPy自時脈訊號產生TTL3訊號，時脈訊號係自工具UI系統306的時脈源所接收或自DSPx內部的時脈源所接收。又例如，DSPy自時脈訊號TTL1產生TTL3訊號，時脈訊號TTL1係由DSPy內部的時脈源所產生。又更例如，DSPy自時脈訊號TTL1產生TTL3訊號，時脈訊號TTL1係由y MHz RF產生器內部的時脈源所產生。 In some embodiments, DSPy generates a TTL3 signal based on the clock signal TTL1, instead of DSPx generating a TTL3 signal and providing the TTL3 signal to DSPy. For example, DSPy generates the TTL3 signal from the clock signal, and the clock signal is received from the clock source of the tool UI system 306 or from the internal clock source of the DSPx. For another example, DSPy generates the TTL3 signal from the clock signal TTL1, and the clock signal TTL1 is generated by the internal clock source of DSPy. For another example, DSPy generates a TTL3 signal from the clock signal TTL1, and the clock signal TTL1 is generated by a clock source inside the y MHz RF generator.

在次狀態S0b期間，DSPx藉由纜線將數位脈動訊號TTL3提供予DSPy。DSPy在次狀態S0b期間將數位脈動訊號TTL3及時脈訊號TTL1提供予y MHz RF產生器的功率控制器PWRS0by。例如，DSPy提供具有次狀態S0b的一部分數位脈動訊號TTL3以及具有狀態S0的時脈訊號TTL1。功率控制器PWRS0by決定或辨識y MHz RF產生器欲產生之RF訊號的功率位準以回應數位脈動訊號TTL3與時脈訊號TTL1的接收。例如，功率控制器PWRS0by辨識功率控制器PWRS0by之記憶體裝置內的一功率位準，此功率位準係映射至數位脈動訊號TTL3的次狀態S0b以及時脈訊號TTL1的狀態S0。功率控制器PWRS0by將功率位準發送至RF電源324。 During the sub-state S0b, DSPx provides the digital pulsation signal TTL3 to DSPy through the cable. DSPy provides the digital pulse signal TTL3 and clock signal TTL1 to the power controller PWRS0by of the y MHz RF generator during the sub-state S0b. For example, DSPy provides a part of the digital pulsation signal TTL3 with the sub-state S0b and the clock signal TTL1 with the state S0. The power controller PWRS0by determines or recognizes the power level of the RF signal to be generated by the y MHz RF generator in response to the reception of the digital pulse signal TTL3 and the clock signal TTL1. For example, the power controller PWRS0by recognizes a power level in the memory device of the power controller PWRS0by, and this power level is mapped to the secondary state S0b of the digital pulse signal TTL3 and the state S0 of the clock signal TTL1. The power controller PWRS0by sends the power level to the RF power source 324.

又，在TTL3訊號的次狀態S0b與TTL1訊號的狀態S0期間，DSPy將數位脈動訊號TTL3與時脈訊號TTL1提供予y MHz RF產生器的調整器AFTS0by。調整器AFTS0by決定或辨識y MHz RF產生器欲產生之RF訊號的頻率位準以回應數位脈動訊號TTL3及時脈訊號TTL1的接收。例如，調整器AFTS0by自調整器AFTS0by的記憶體裝置辨識一頻率位準，此頻率位準係映射至數位脈動訊號TTL3的次狀態S0b及時脈訊號TTL1的狀態S0。調整器AFTS0by將該頻率位準提供予RF電源324。在接收到來自功率控制器PWRS0by在數位脈動訊號TTL3之次狀態S0b期間之功率位準以及來自調整器AFTS0by在數位脈動訊號TTL3之次狀態S0b期間以及時脈訊號TTL1之狀態S0期間之頻率位準之後，RF電源324產生具有該頻率位準與該功率位準的RF訊號。 In addition, during the sub-state S0b of the TTL3 signal and the state S0 of the TTL1 signal, DSPy provides the digital pulsation signal TTL3 and the clock signal TTL1 to the adjuster AFTS0by of the y MHz RF generator. The adjuster AFTS0by determines or recognizes the frequency level of the RF signal to be generated by the y MHz RF generator in response to the reception of the digital pulse signal TTL3 and the clock signal TTL1. For example, the adjuster AFTS0by self-adjuster AFTS0by's memory device recognizes a frequency level, which is mapped to the secondary state S0b of the digital pulse signal TTL3 and the state S0 of the clock signal TTL1. The regulator AFTS0by provides the frequency level to the RF power source 324. The power level during the secondary state S0b of the digital pulse signal TTL3 received from the power controller PWRS0by and the frequency level during the secondary state S0b of the digital pulse signal TTL3 from the regulator AFTS0by and the frequency level during the state S0 of the clock signal TTL1 After that, the RF power source 324 generates an RF signal having the frequency level and the power level.

在數位脈動訊號TTL3之次狀態S0b期間以及時脈訊號TTL1之狀態S0期間之功率位準與頻率位準係關於達成一製程率，如蝕刻率、或沉積率、或清理率、或濺射率等。例如，在數位脈動訊號TTL3之次狀態S0b期間以及時脈訊號TTL1之狀態S0期間，y MHz RF產生器所產生的RF訊號能協助在蝕刻晶圓318或於晶圓318上沉積材料的精細調整期間達到複數蝕刻率之間的平衡。複數蝕刻率中的一者係與次狀態S0b相關而複數蝕刻率中的另一者係與次狀態S0a相關。 The power level and frequency level during the secondary state S0b of the digital pulse signal TTL3 and the state S0 of the clock signal TTL1 are related to achieving a process rate, such as etching rate, deposition rate, or cleaning rate, or sputtering rate Wait. For example, during the secondary state S0b of the digital pulsation signal TTL3 and the state S0 of the clock signal TTL1, the RF signal generated by the y MHz RF generator can assist in fine adjustment of the etched wafer 318 or the deposited material on the wafer 318 During this period, a balance between the plural etching rates is reached. One of the plural etch rates is related to the sub-state S0b and the other of the plural etch rates is related to the sub-state S0a.

又，在y MHz RF產生器的次狀態S0b期間，x MHz RF產生器操作於狀態S0。在狀態S0期間，DSPx將時脈訊號TTL1發送至x MHz RF產生器的功率控制器PWRS0x及調整器AFTS0x。在接收到時脈訊號TTL1後，功率控制器PWRS0x決定或辨識一功率位準。此功率位準係自功率控制器PWRS0x的記憶體裝置所辨識。此功率位準係提供至RF電源322。 Also, during the sub-state S0b of the y MHz RF generator, the x MHz RF generator operates in the state S0. During the state S0, DSPx sends the clock signal TTL1 to the power controller PWRS0x of the x MHz RF generator and the regulator AFTS0x. After receiving the clock signal TTL1, the power controller PWRS0x determines or recognizes a power level. This power level is identified by the memory device of the power controller PWRS0x. This power level is provided to the RF power source 322.

又，在接收到時脈訊號TTL1後，調整器AFTS0x決定或辨識一頻率位準。該頻率位準係自調整器AFTS0x的記憶體裝置所辨識。調整器AFTS0x將該頻率位準提供予RF電源322。在接收到狀態S0期間的功率位準與頻率位準後，RF電源322產生具有該頻率位準與該功率位準的RF訊號。 Furthermore, after receiving the clock signal TTL1, the adjuster AFTS0x determines or recognizes a frequency level. The frequency level is identified by the memory device of the AFTS0x self-adjuster. The regulator AFTS0x provides the frequency level to the RF power source 322. After receiving the power level and the frequency level during the state S0, the RF power source 322 generates an RF signal having the frequency level and the power level.

應注意，在x MHz RF產生器所產生之RF訊號之狀態S0期間的頻率位準與功率位準能協助達到一製程率，如沉積率、蝕刻率、清理率、濺射率等。例如，在狀態S0期間，x MHz RF產生器產生具有該功率位準的RF訊號，該功率位準係映射至一粗略蝕刻位準及/或映射至一粗略頻率位準。 It should be noted that the frequency level and power level during the state S0 of the RF signal generated by the x MHz RF generator can help achieve a process rate, such as deposition rate, etching rate, cleaning rate, sputtering rate, etc. For example, during the state S0, the x MHz RF generator generates an RF signal with the power level, which is mapped to a rough etching level and/or mapped to a rough frequency level.

阻抗匹配電路302接收x MHz RF產生器在狀態S0期間所產生的RF訊號、並接收y MHz RF產生器在次狀態S0b期間所產生的RF訊號，並且匹配負載與源的阻抗以產生經修改的RF訊號。經修改的RF訊號係由阻抗匹配電路302提供予夾頭314，以產生或修改電漿而處理晶圓318以達到一製程率。 The impedance matching circuit 302 receives the RF signal generated by the x MHz RF generator during the state S0 and the RF signal generated by the y MHz RF generator during the sub-state S0b, and matches the impedance of the load and the source to generate a modified RF signal. The modified RF signal is provided by the impedance matching circuit 302 to the chuck 314 to generate or modify plasma to process the wafer 318 to achieve a process rate.

又，在次狀態S0a期間，DSPx藉由纜線將數位脈動訊號TTL3提供予DSPy、並藉由纜線將時脈訊號TTL1提供予DSPy。DSPy在次狀態S0a期間將數位脈動訊號TTL3與時脈訊號TTL1提供予y MHz RF產生器的功率控制器PWRS0ay。例如，DSPy提供具有次狀態S0a的一部分數位脈動訊號TTL3並提供具有狀態S0的時脈訊號TTL1。功率控制器PWRS0ay決定或辨識y MHz RF產生器欲產生之RF訊號的功率位準以回應數位脈動訊號TTL3及時脈訊號TTL1的接收。例如，功率控制器PWRS0ay辨識功率控制器PWRS0ay之記憶體裝置內的一功率位準，此功率位準係映射至數位脈動訊號TTL3的次狀態S0a及時脈訊號TTL1的狀態S0。功率控制器PWRS0ay將該功率位準發送至RF電源324。 In addition, during the sub-state S0a, DSPx provides the digital pulsation signal TTL3 to DSPy through the cable, and provides the clock signal TTL1 to DSPy through the cable. DSPy provides the digital pulse signal TTL3 and clock signal TTL1 to the power controller PWRS0ay of the y MHz RF generator during the sub-state S0a. For example, DSPy provides a part of the digital pulsation signal TTL3 with the sub-state S0a and provides the clock signal TTL1 with the state S0. The power controller PWRS0ay determines or recognizes the power level of the RF signal to be generated by the y MHz RF generator in response to the reception of the digital pulse signal TTL3 and the clock signal TTL1. For example, the power controller PWRS0ay recognizes a power level in the memory device of the power controller PWRS0ay, and this power level is mapped to the secondary state S0a of the digital pulsation signal TTL3 and the state S0 of the clock signal TTL1. The power controller PWRS0ay sends the power level to the RF power source 324.

又，在TTL3訊號的次狀態S0a與TTL1訊號的狀態S0期間，DSPy將數位脈動訊號TTL3提供予y MHz RF產生器的調整器AFTS0ay。調整器AFTS0ay決定或辨識y MHz RF產生器欲產生之RF訊號的頻率位準以回應具有次狀態S0a之數位脈動訊號TTL3及具有狀態S0之時脈訊號TTL1的接收。調整器AFTS0ay自調整器AFTS0ay的記憶體裝置辨識一頻率位準，此頻率位準係映射至數位脈動訊號TTL3的次狀態S0a及時脈訊號TTL1的狀態S0。調整器AFTS0ay將該頻率位準提供予RF電源324。在接收到來自功率控制器PWRS0ay在次狀態S0a期間之功率位準以及來自調整器AFTS0ay在次狀態S0a期間的頻率位準之後，RF電源324產生具有該頻率位準與該功率位準的RF訊號。 In addition, during the sub-state S0a of the TTL3 signal and the state S0 of the TTL1 signal, DSPy provides the digital pulsation signal TTL3 to the adjuster AFTS0ay of the y MHz RF generator. The adjuster AFTS0ay determines or recognizes the frequency level of the RF signal to be generated by the y MHz RF generator in response to the reception of the digital pulse signal TTL3 with the sub-state S0a and the clock signal TTL1 with the state S0. The memory device of the self-adjuster AFTS0ay recognizes a frequency level, which is mapped to the secondary state S0a of the digital pulse signal TTL3 and the state S0 of the clock signal TTL1. The regulator AFTS0ay provides the frequency level to the RF power source 324. After receiving the power level from the power controller PWRS0ay during the sub-state S0a and the frequency level from the regulator AFTS0ay during the sub-state S0a, the RF power supply 324 generates an RF signal having the frequency level and the power level .

在數位脈動訊號TTL3之次狀態S0a期間以及時脈訊號TTL1之狀態S0期間之功率位準與頻率位準係關於達成一製程率，如蝕刻率、或沉積率、或清理率、或濺射率等。例如，在數位脈動訊號TTL3之次狀態S0a期間以及時脈訊號TTL1之狀態S0期間，y MHz RF產生器所產生的RF訊號能協助在蝕刻晶圓318或於晶圓318上沉積材料的精細調整期間達到平衡。在數位脈動訊號TTL3之次狀態S0a期間以及時脈訊號TTL1之狀態S0期間，y MHz RF產生器所產生的RF訊號能協助增加蝕刻晶圓318或蝕刻沉積在晶圓318上之材料的蝕刻率，以更進一步地在次狀態S0b期間達到增加蝕刻率與減少蝕刻率之間的平衡。 The power level and frequency level during the secondary state S0a of the digital pulse signal TTL3 and the state S0 of the clock signal TTL1 are related to achieving a process rate, such as etching rate, deposition rate, or cleaning rate, or sputtering rate Wait. For example, during the secondary state S0a of the digital pulsation signal TTL3 and the state S0 of the clock signal TTL1, the RF signal generated by the y MHz RF generator can assist in fine adjustment of the etched wafer 318 or the deposited material on the wafer 318 A balance is reached during the period. During the sub-state S0a of the digital pulse signal TTL3 and the state S0 of the clock signal TTL1, the RF signal generated by the y MHz RF generator can help increase the etching rate of etching the wafer 318 or etching the material deposited on the wafer 318 , To further achieve a balance between increasing the etching rate and reducing the etching rate during the sub-state S0b.

又，在y MHz RF產生器的次狀態S0a期間，x MHz RF產生器操作於狀態S0。x MHz RF產生器在狀態S0期間的操作已於前面敘述。阻抗匹配電路302接收x MHz RF產生器在狀態S0期間所產生的RF訊號、並接收y MHz RF產生器在次狀態S0a期間所產生的RF訊號，並且匹配負載與源的阻抗以產生經修改的RF訊號。經修改的RF訊號係由阻抗匹配電路302提供予夾頭314以修改電漿而處 理晶圓318，如蝕刻晶圓318、將材料沉積至晶圓318上、或處理沉積在晶圓318上的材料。 Also, during the sub-state S0a of the y MHz RF generator, the x MHz RF generator operates in the state S0. The operation of the x MHz RF generator during the state S0 has been described above. The impedance matching circuit 302 receives the RF signal generated by the x MHz RF generator during the state S0 and the RF signal generated by the y MHz RF generator during the sub-state S0a, and matches the impedance of the load and the source to generate a modified RF signal. The modified RF signal is provided by the impedance matching circuit 302 to the chuck 314 to modify the plasma. The wafer 318 is processed, such as etching the wafer 318, depositing material on the wafer 318, or processing the material deposited on the wafer 318.

在狀態S1期間，DSPy將TTL3訊號提供予功率控制器PWRS1y。例如，DSPy將具有狀態S1的一部分TTL3訊號提供予功率控制器PWRS1y。應注意在狀態S1期間，TTL3訊號係與TTL1訊號相同。在接收到TTL3訊號後，功率控制器PWRS1y決定或辨識一功率位準並將該功率位準提供予RF電源324。又，在狀態S1期間，DSPy將TTL3訊號提供予調整器AFTS1y。在接收到TTL3訊號後，調整器AFTS1y決定或辨識一頻率位準並將該頻率位準提供予RF電源324。RF電源324產生具有狀態S1期間之該功率位準與該頻率位準的RF訊號、並將此RF訊號提供予阻抗匹配電路302。 During the state S1, DSPy provides the TTL3 signal to the power controller PWRS1y. For example, DSPy provides a part of the TTL3 signal with state S1 to the power controller PWRS1y. It should be noted that during the state S1, the TTL3 signal is the same as the TTL1 signal. After receiving the TTL3 signal, the power controller PWRS1y determines or recognizes a power level and provides the power level to the RF power source 324. Also, during the state S1, DSPy provides the TTL3 signal to the adjuster AFTS1y. After receiving the TTL3 signal, the adjuster AFTS1y determines or recognizes a frequency level and provides the frequency level to the RF power source 324. The RF power source 324 generates an RF signal having the power level and the frequency level during the state S1, and provides the RF signal to the impedance matching circuit 302.

又，在狀態S1期間，DSPx將TTL3訊號提供予功率控制器PWRS1x及調整器AFTS1x。在接收到TTL3訊號後，功率控制器PWRS1x決定或辨識與狀態S1相關的功率位準。例如，功率控制器PWRS1x辨識儲存在功率控制器PWRS1x之記憶體裝置中的一功率位準。功率控制器PWRS1x將該功率位準提供予RF電源322。又，在接收到TTL3訊號後，調整器AFTS1x決定或辨識與狀態S1相關的一頻率位準。例如，調整器AFTS1x辨識一頻率位準，此頻率位準係映射至狀態S1且係儲存在調整器AFTS1x的記憶體裝置中。該頻率位準係自調整器AFTS1x提供至電源322。在狀態S1期間，電源322產生具有與狀態S1相關之該頻率位準與該功率位準的RF訊號。 Also, during the state S1, the DSPx provides the TTL3 signal to the power controller PWRS1x and the regulator AFTS1x. After receiving the TTL3 signal, the power controller PWRS1x determines or recognizes the power level related to the state S1. For example, the power controller PWRS1x recognizes a power level stored in the memory device of the power controller PWRS1x. The power controller PWRS1x provides the power level to the RF power source 322. Furthermore, after receiving the TTL3 signal, the adjuster AFTS1x determines or recognizes a frequency level related to the state S1. For example, the adjuster AFTS1x recognizes a frequency level, which is mapped to the state S1 and stored in the memory device of the adjuster AFTS1x. The frequency level is provided to the power supply 322 by the self-adjuster AFTS1x. During the state S1, the power supply 322 generates an RF signal having the frequency level and the power level related to the state S1.

阻抗匹配電路302在狀態S1期間自RF電源322與324接收RF訊號，並匹配負載與源的阻抗以產生經修改的RF訊號。在某些實施例中，源的阻抗係基於阻抗匹配電路302自產生一或多個RF訊號之對應的一或多個RF產生器所接 收的一或多個RF訊號。自阻抗匹配電路302藉由RF傳輸線312將在狀態S1期間所產生之經修改的RF訊號發送至夾頭314。 The impedance matching circuit 302 receives the RF signal from the RF power sources 322 and 324 during the state S1, and matches the impedance of the load and the source to generate a modified RF signal. In some embodiments, the impedance of the source is based on the one or more RF generators connected to the corresponding one or more RF signals generated by the impedance matching circuit 302. One or more RF signals received. The self-impedance matching circuit 302 transmits the modified RF signal generated during the state S1 to the chuck 314 through the RF transmission line 312.

在各種實施例中，在狀態S1期間所達到的蝕刻率係高於在狀態S0期間所達到的蝕刻率，或在狀態S1期間所達到的沉積率係低於在狀態S0期間所達到的沉積率，或在狀態S1期間所達到的濺射率係高於在狀態S0期間所達到的濺射率，或在狀態S1期間所達到的清理率係高於在狀態S0期間所達到的清理率。 In various embodiments, the etching rate achieved during state S1 is higher than the etching rate achieved during state S0, or the deposition rate achieved during state S1 is lower than the deposition rate achieved during state S0 , Or the sputtering rate achieved during the state S1 is higher than the sputtering rate achieved during the state S0, or the cleaning rate achieved during the state S1 is higher than the cleaning rate achieved during the state S0.

應注意，在某些實施例中，y MHz RF產生器的功率控制器與調整器為DSPy的部件。例如，功率控制器PWRS0ay、PWRS0by與PWRS1y及調整器AFTS1y、AFTS0ay與AFTS0by皆為DSPy所執行之電腦程式的一部分。又例如，功率控制器PWRS0ay、PWRS0by與PWRS1y及調整器AFTS1y、AFTS0ay與AFTS0by皆為整合至DSPy之電路內的電路。 It should be noted that in some embodiments, the power controller and regulator of the y MHz RF generator are components of DSPy. For example, the power controllers PWRS0ay, PWRS0by and PWRS1y and the regulators AFTS1y, AFTS0ay and AFTS0by are all part of the computer program executed by DSPy. For another example, the power controllers PWRS0ay, PWRS0by and PWRS1y and the regulators AFTS1y, AFTS0ay and AFTS0by are all circuits integrated into the circuit of DSPy.

在各種實施例中，y MHz RF產生器的功率控制器PWRS0ay、PWRS0by與PWRS1y係藉由開關(如多工器)而連接至DSPy的單一相同輸出，而非將y MHz RF產生器的每一功率控制器PWRS0ay、PWRS0by與PWRS1y耦合至DSPy的不同輸出。開關在狀態S1期間將DSPy連接至功率控制器PWRS1y，在次狀態S0a期間將DSPy連接至功率控制器PWRS0ay，在次狀態S0b期間將DSPy連接至功率控制器PWRS0by。 In various embodiments, the power controllers PWRS0ay, PWRS0by, and PWRS1y of the y MHz RF generator are connected to a single identical output of DSPy by switches (such as multiplexers), instead of connecting each of the y MHz RF generators The power controllers PWRS0ay, PWRS0by, and PWRS1y are coupled to different outputs of DSPy. The switch connects DSPy to the power controller PWRS1y during the state S1, connects DSPy to the power controller PWRS0ay during the secondary state S0a, and connects DSPy to the power controller PWRS0by during the secondary state S0b.

類似地，在數個實施例中，x MHz RF產生器的功率控制器PWRS0x與PWRS1x係藉由開關而連接至DSPx的單一相同輸出，而非將x MHz RF產生器的每一功率控制器PWRS0x與PWRS1x耦合至DSPx的不同輸出。開關在狀態S0期間將DSPx連接至功率控制器PWRS0x，在狀態S1期間將DSPx連接至功率控制器PWRS1x。 Similarly, in several embodiments, the power controllers PWRS0x and PWRS1x of the x MHz RF generator are connected to a single same output of DSPx by a switch, instead of connecting each power controller PWRS0x of the x MHz RF generator It is coupled to a different output of DSPx from PWRS1x. The switch connects DSPx to the power controller PWRS0x during the state S0, and connects DSPx to the power controller PWRS1x during the state S1.

在各種實施例中，y MHz RF產生器的調整器AFTS1y、AFTS0ay與AFTS0by係藉由開關(如多工器等)而連接至DSPy的單一相同輸出，而非將y MHz RF產生器的每一調整器AFTS1y、AFTS0ay與AFTS0by耦合至DSPy的不同輸出。開關在狀態S1期間將DSPy連接至調整器AFTS1y，在次狀態S0a期間將DSPy連接至調整器AFTS0ay，在次狀態S0b期間將DSPy連接至調整器AFTS0by。 In various embodiments, the adjusters AFTS1y, AFTS0ay, and AFTS0by of the y MHz RF generator are connected to the same single output of DSPy by switches (such as multiplexers, etc.), instead of connecting each of the y MHz RF generators. The adjusters AFTS1y, AFTS0ay and AFTS0by are coupled to different outputs of DSPy. The switch connects DSPy to the regulator AFTS1y during the state S1, connects DSPy to the regulator AFTS0ay during the secondary state S0a, and connects DSPy to the regulator AFTS0by during the secondary state S0b.

類似地，在數個實施例中，x MHz RF產生器的調整器AFTS0x與AFTS1x係藉由開關而連接至DSPx的單一相同輸出，而非將x MHz RF產生器的每一調整器AFTS0x與AFTS1x耦合至DSPx的不同輸出。開關在狀態S0期間將DSPx連接至調整器AFTS0x，在狀態S1期間將DSPx連接至調整器AFTS1x。 Similarly, in several embodiments, the adjusters AFTS0x and AFTS1x of the x MHz RF generator are connected to a single same output of DSPx by switches, instead of connecting each adjuster AFTS0x and AFTS1x of the x MHz RF generator. Coupling to different outputs of DSPx. The switch connects DSPx to the regulator AFTS0x during state S0, and connects DSPx to the regulator AFTS1x during state S1.

圖5B顯示系統510的一實施例，系統510係用以例示x MHz RF產生器之DSPx產生TTL1與TTL3訊號。時脈訊號TTL1係由DSPx內部的時脈源所產生，而非自工具UI系統306的時脈源接收時脈訊號TTL1。時脈訊號TTL1係用於藉由DSPx產生數位脈動訊號TTL3。TTL3訊號與時脈訊號TTL1係由DSPx提供予DSPy。又，工具UI系統307將與x MHz RF產生器相關的配方提供予DSPx、並將與y MHz RF產生器相關的配方提供予DSPy。 FIG. 5B shows an embodiment of the system 510. The system 510 is used to illustrate that the DSPx of the x MHz RF generator generates TTL1 and TTL3 signals. The clock signal TTL1 is generated by the internal clock source of DSPx, instead of receiving the clock signal TTL1 from the clock source of the tool UI system 306. The clock signal TTL1 is used to generate the digital pulse signal TTL3 by DSPx. The TTL3 signal and the clock signal TTL1 are provided by DSPx to DSPy. In addition, the tool UI system 307 provides the formula related to the x MHz RF generator to DSPx, and provides the formula related to the y MHz RF generator to DSPy.

例如，y MHz RF產生器所供給之RF訊號的功率所具有的頻率係與訊號404(圖4A)、或訊號412(圖4B)、或訊號432(圖4C)、或訊號432(圖4D)的頻率相同。 For example, the frequency of the RF signal power supplied by the y MHz RF generator is the same as signal 404 (Figure 4A), or signal 412 (Figure 4B), or signal 432 (Figure 4C), or signal 432 (Figure 4D) The frequency is the same.

圖6A顯示圖600之一實施例，圖600係用以例示x MHz RF產生器所產生之RF訊號在狀態S1與S0兩狀態期間的脈動。x MHz RF產生器所產生之RF訊號的脈動會在狀態S1期間造成兩個次狀態S1a與S1b、並在狀態S0期間造成兩 個次狀態S0a與S0b。圖600繪示經輸送之RF訊號602的功率位準對時間的關係，此功率位準為x MHz RF產生器所產生且朝向RF產生器反射之RF訊號的函數。 FIG. 6A shows an embodiment of the diagram 600, which is used to illustrate the pulsation of the RF signal generated by the x MHz RF generator during the two states S1 and S0. The pulsation of the RF signal generated by the x MHz RF generator will cause two sub-states S1a and S1b during the state S1, and two sub-states S1a and S1b during the state S0. The sub-states S0a and S0b. Graph 600 shows the power level of the transmitted RF signal 602 versus time as a function of the RF signal generated by the x MHz RF generator and reflected towards the RF generator.

在TTL1訊號的狀態S0期間，RF訊號602在次狀態S0a與S0b之間變動。又，在TTL1訊號的狀態S1期間，RF訊號602在次狀態S1a與S1b之間變動。 During the state S0 of the TTL1 signal, the RF signal 602 changes between the sub-states S0a and S0b. Moreover, during the state S1 of the TTL1 signal, the RF signal 602 changes between the sub-states S1a and S1b.

在某些實施例中，RF訊號602在次狀態S0b期間的功率位準係低於RF訊號602在次狀態S1b期間的功率位準。 In some embodiments, the power level of the RF signal 602 during the sub-state S0b is lower than the power level of the RF signal 602 during the sub-state S1b.

應注意，使用RF訊號602的次狀態S0a與S0b能協助粗略調整在TTL1訊號的狀態S0期間的製程率，如蝕刻率、沉積率、濺射率、或清理率等。 It should be noted that using the sub-states S0a and S0b of the RF signal 602 can help roughly adjust the process rate during the state S0 of the TTL1 signal, such as etching rate, deposition rate, sputtering rate, or cleaning rate.

圖6B顯示圖610之一實施例，圖610係用以例示使用y MHz RF產生器以及協同使用產生具有四個次狀態S0a、S0b、S1a與S1b之RF訊號602的x MHz RF產生器。當x MHz RF產生器產生RF訊號以更進一步地提供具有次狀態S0a與S0b的RF訊號602時，y MHz RF產生器產生RF訊號以更進一步地提供具有狀態S0之經輸送的功率RF訊號604。在某些實施例中，當製程率的精細控制為恆定或實質上恆定時，使用x MHz RF產生器所產生之RF訊號602的次狀態S0a與S0b可粗略控制製程率，如蝕刻率、沉積率、濺射率等。在某些實施例中，當y MHz RF產生器係操作在對應至狀態S0的功率位準時，製程率的精細控制係實質上恆定。又，當x MHz RF產生器協助提供具有次狀態S1a與S1b之RF訊號602時，y MHz RF產生器協助提供具有狀態S1的RF訊號604。 FIG. 6B shows an embodiment of FIG. 610. FIG. 610 is used to illustrate an x MHz RF generator that uses a y MHz RF generator and a coordinated use to generate an RF signal 602 with four sub-states S0a, S0b, S1a, and S1b. When the x MHz RF generator generates the RF signal to further provide the RF signal 602 with the sub-states S0a and S0b, the y MHz RF generator generates the RF signal to further provide the transmitted power RF signal 604 with the state S0 . In some embodiments, when the fine control of the process rate is constant or substantially constant, the sub-states S0a and S0b of the RF signal 602 generated by the x MHz RF generator can be used to roughly control the process rate, such as etching rate, deposition Rate, sputtering rate, etc. In some embodiments, when the y MHz RF generator is operating at the power level corresponding to the state S0, the fine control of the process rate is substantially constant. Furthermore, when the x MHz RF generator assists in providing the RF signal 602 with the sub-states S1a and S1b, the y MHz RF generator assists in providing the RF signal 604 with the state S1.

圖6C顯示圖620的一實施例，圖620係用以例示在TTL1訊號之狀態S0期間之工作週期係不同於在TTL1訊號之狀態S1期間的工作週期。圖620繪示2MHz RF產生器所輸送之功率對時間的關係。經輸送的功率係顯示為脈動訊號622。應注意，脈動訊號622在狀態S0期間的工作週期係大於50%且狀態S1的佔 據期間係等於狀態S0的佔據期間。例如，訊號622在次狀態S0a期間的佔據時間大於在次狀態S0b期間的佔據期間。應注意，經輸送的功率訊號622在狀態S1期間的工作週期為50%。 FIG. 6C shows an embodiment of FIG. 620, which is used to illustrate that the duty cycle during the state S0 of the TTL1 signal is different from the duty cycle during the state S1 of the TTL1 signal. Graph 620 shows the power delivered by the 2MHz RF generator versus time. The transmitted power is displayed as a pulsation signal 622. It should be noted that the duty cycle of the pulsation signal 622 during the state S0 is greater than 50% and the proportion of the state S1 The data period is equal to the occupation period of state S0. For example, the occupation time of the signal 622 during the sub-state S0a is greater than the occupation period during the sub-state S0b. It should be noted that the duty cycle of the transmitted power signal 622 during the state S1 is 50%.

在某些實施例中，訊號622在狀態S0期間的工作週期係小於50%。例如，輸送訊號在次狀態S0a期間的佔據時間係少於在次狀態S0b期間的佔據時間。 In some embodiments, the duty cycle of the signal 622 during the state S0 is less than 50%. For example, the occupation time of the transmission signal during the sub-state S0a is less than the occupation time during the sub-state S0b.

更應注意，訊號602在狀態S0與S1每一者的工作週期(圖6A至6B)皆為50%。例如，訊號622在次狀態S0a期間的佔據時間係等於其在次狀態S0b期間的佔據時間。 It should be noted that the duty cycle of the signal 602 in each of the states S0 and S1 (FIGS. 6A to 6B) is 50%. For example, the occupation time of the signal 622 during the secondary state S0a is equal to the occupation time of the signal 622 during the secondary state S0b.

在某些實施例中，2MHz RF產生器在狀態S1期間所輸送之脈動功率訊號的工作週期係大於或小於50%，經輸送的脈動功率訊號在狀態S0期間的工作週期係等於50%。 In some embodiments, the duty cycle of the pulsating power signal delivered by the 2MHz RF generator during the state S1 is greater than or less than 50%, and the duty cycle of the pulsating power signal delivered during the state S0 is equal to 50%.

在各種實施例中，2MHz RF產生器在狀態S1期間所輸送之脈動功率訊號的工作週期係大於或小於50%，經輸送的脈動功率訊號在狀態S0期間的工作週期係大於或小於50%。 In various embodiments, the duty cycle of the pulsating power signal delivered by the 2MHz RF generator during the state S1 is greater than or less than 50%, and the duty cycle of the pulsating power signal delivered during the state S0 is greater than or less than 50%.

在數個實施例中，x MHz RF產生器所輸送之功率的狀態S0佔據時間係少於x MHz RF產生器所輸送之功率的狀態S1佔據時間。在此些實施例中，經輸送的功率在每一狀態S0與S1期間的工作週期為50%。 In several embodiments, the occupation time of the state S0 of the power delivered by the x MHz RF generator is less than the occupation time of the state S1 of the power delivered by the x MHz RF generator. In these embodiments, the duty cycle of the delivered power during each state S0 and S1 is 50%.

在各種實施例中，x MHz RF產生器所輸送之功率的狀態S0佔據時間係少於或多於x MHz RF產生器所輸送之功率的狀態S1佔據時間。在此些實施例中，經輸送的功率在狀態S0期間的工作週期係大於或小於50%，且經輸送的功率在狀態S1期間的工作週期係等於50%。 In various embodiments, the occupation time of the state S0 of the power delivered by the x MHz RF generator is less than or more than the occupation time of the state S1 of the power delivered by the x MHz RF generator. In these embodiments, the duty cycle of the delivered power during the state S0 is greater than or less than 50%, and the duty cycle of the delivered power during the state S1 is equal to 50%.

在某些實施例中，x MHz RF產生器所輸送之功率的狀態S0佔據時間係少於或多於x MHz RF產生器所輸送之功率的狀態S1佔據時間。在此些實施例中，經輸送的功率在狀態S0期間的工作週期係等於50%，且經輸送的功率在狀態S1期間的工作週期係大於或小於50%。 In some embodiments, the occupation time of the state S0 of the power delivered by the x MHz RF generator is less than or more than the occupation time of the state S1 of the power delivered by the x MHz RF generator. In these embodiments, the duty cycle of the delivered power during the state S0 is equal to 50%, and the duty cycle of the delivered power during the state S1 is greater than or less than 50%.

在各種實施例中，x MHz RF產生器所輸送之功率的狀態S0佔據時間係少於或多於x MHz RF產生器所輸送之功率的狀態S1佔據時間。在此些實施例中，經輸送的功率在狀態S0期間的工作週期係大於或小於50%，且經輸送的功率在狀態S1期間的工作週期係大於或小於50%。 In various embodiments, the occupation time of the state S0 of the power delivered by the x MHz RF generator is less than or more than the occupation time of the state S1 of the power delivered by the x MHz RF generator. In these embodiments, the duty cycle of the delivered power during the state S0 is greater than or less than 50%, and the duty cycle of the delivered power during the state S1 is greater than or less than 50%.

在某些實施例中，TTL訊號所具有之頻率係等於脈動訊號622所具有的頻率。TTL訊號係由產生TTL5訊號的裝置所產生。例如，DSPx自TTL1訊號與調變訊號產生TTL訊號。調變訊號調變TTL1訊號以產生TTL訊號。 In some embodiments, the frequency of the TTL signal is equal to the frequency of the pulsation signal 622. The TTL signal is generated by the device that generates the TTL5 signal. For example, DSPx generates TTL signals from TTL1 signals and modulated signals. The modulation signal modulates the TTL1 signal to generate a TTL signal.

圖7A顯示系統700之一實施例，系統700係用以例示在x MHz RF產生器中使用四個次狀態S0a、S0b、S1a與S1b。系統700包含電漿室304、x MHz RF產生器、y MHz RF產生器及工具UI系統306。工具UI系統306的時脈源產生時脈訊號TTL1並藉由纜線313將時脈訊號TTL1提供予DSPx及DSPy。 FIG. 7A shows an embodiment of the system 700. The system 700 is used to illustrate the use of four sub-states S0a, S0b, S1a, and S1b in an x MHz RF generator. The system 700 includes a plasma chamber 304, an x MHz RF generator, a y MHz RF generator, and a tool UI system 306. The clock source of the tool UI system 306 generates the clock signal TTL1 and provides the clock signal TTL1 to the DSPx and DSPy through the cable 313.

在次狀態S0a期間，DSPx自TTL1訊號產生TTL5訊號、並將TTL5訊號提供予DSPy。例如，DSPx藉著利用TTL4訊號調變TTL1訊號而產生TTL5訊號。又例如，DSPx藉著將時脈訊號TTL1的邏輯位準乘以TTL4訊號的邏輯位準而產生TTL5訊號。在各種實施例中，RF訊號602(圖6A與6B)所具有之頻率係與TTL5訊號所具有之頻率相同。在某些實施例中RF訊號602所具有之頻率係與TTL4訊號所具有之頻率相同。 During the sub-state S0a, DSPx generates a TTL5 signal from the TTL1 signal and provides the TTL5 signal to DSPy. For example, DSPx generates TTL5 signal by modulating TTL1 signal with TTL4 signal. For another example, DSPx generates a TTL5 signal by multiplying the logic level of the clock signal TTL1 by the logic level of the TTL4 signal. In various embodiments, the frequency of the RF signal 602 (FIGS. 6A and 6B) is the same as the frequency of the TTL5 signal. In some embodiments, the frequency of the RF signal 602 is the same as the frequency of the TTL4 signal.

在次狀態S0b期間，DSPx將TTL5訊號及TTL1訊號提供予x MHz RF產生器的功率控制器PWRS0bx及調整器x MHz RF產生器的AFTS0bx。例如，在次狀態S0b期間，DSPx將具有次狀態S0b之一部分TTL5訊號及具有狀態S0的時脈訊號TTL1提供予功率控制器PWRS0bx及調整器AFTS0bx。功率控制器PWRS0bx在接收到TTL5訊號後決定或辨識對應至與TTL5訊號之次狀態S0b與時脈訊號TTL1之狀態S0的功率位準。例如，功率控制器PWRS0bx自功率控制器PWRS0bx之記憶體裝置辨識一功率位準，此功率位準係映射至訊號TTL5的次狀態S0b以及時脈訊號TTL1的狀態S0。功率控制器PWRS0bx將和TTL5訊號之次狀態S0b與時脈訊號TTL1之狀態S0相關的功率位準提供予RF電源322。 During the sub-state S0b, DSPx provides TTL5 signal and TTL1 signal to the power controller PWRS0bx of the x MHz RF generator and AFTS0bx of the regulator x MHz RF generator. For example, during the sub-state S0b, the DSPx provides a part of the TTL5 signal with the sub-state S0b and the clock signal TTL1 with the state S0 to the power controller PWRS0bx and the regulator AFTS0bx. The power controller PWRS0bx determines or identifies the power level corresponding to the secondary state S0b of the TTL5 signal and the state S0 of the clock signal TTL1 after receiving the TTL5 signal. For example, the power controller PWRS0bx recognizes a power level from the memory device of the power controller PWRS0bx, and this power level is mapped to the sub-state S0b of the signal TTL5 and the state S0 of the clock signal TTL1. The power controller PWRS0bx provides the RF power source 322 with power levels related to the secondary state S0b of the TTL5 signal and the state S0 of the clock signal TTL1.

又，在TTL5訊號的次狀態S0b與TTL1訊號的狀態S0期間，調整器AFTS0bx在接收到TTL5訊號與TTL1訊號後決定或辨識一頻率位準。例如，調整器AFTS0bx自調整器AFTS0bx的記憶體裝置辨識該頻率位準，此頻率位準係映射至TTL5訊號的次狀態S0b與TTL1訊號的狀態S0。調整器AFTS0bx將該頻率位準提供予RF電源322。 Moreover, during the sub-state S0b of the TTL5 signal and the state S0 of the TTL1 signal, the regulator AFTS0bx determines or recognizes a frequency level after receiving the TTL5 signal and the TTL1 signal. For example, the memory device of the AFTS0bx self-adjuster AFTS0bx recognizes the frequency level, and the frequency level is mapped to the sub-state S0b of the TTL5 signal and the state S0 of the TTL1 signal. The regulator AFTS0bx provides the frequency level to the RF power source 322.

在接收到對應至TTL5訊號的次狀態S0b與TTL1訊號的狀態S0之該功率位準與該頻率位準後，RF電源322針對次狀態S0b產生具有該功率位準與該頻率位準的RF訊號。在TTL5訊號的次狀態S0b與TTL1訊號的狀態S0期間所產生的RF訊號係藉由RF纜線308供給至阻抗匹配電路302。 After receiving the power level and the frequency level corresponding to the sub-state S0b of the TTL5 signal and the state S0 of the TTL1 signal, the RF power supply 322 generates an RF signal with the power level and the frequency level for the sub-state S0b . The RF signal generated during the sub-state S0b of the TTL5 signal and the state S0 of the TTL1 signal is supplied to the impedance matching circuit 302 through the RF cable 308.

應注意，在某些實施例中，在TTL5訊號的次狀態S0b與TTL1訊號的狀態S0期間的該功率位準及/或該頻率位準係用以粗略控制製程率，如在晶圓318上沉積材料的沉積率、或蝕刻晶圓318或蝕刻晶圓318上之材料的蝕刻率、或 濺射晶圓318或濺射沉積在晶圓318上之材料的濺射率、或清理晶圓318或清理沉積在基板上之材料的清理率等。 It should be noted that in some embodiments, the power level and/or the frequency level during the sub-state S0b of the TTL5 signal and the state S0 of the TTL1 signal are used to roughly control the process rate, such as on the wafer 318 The deposition rate of the deposited material, or the etching rate of etching the wafer 318 or etching the material on the wafer 318, or The sputtering rate of the sputtered wafer 318 or the material deposited on the wafer 318, or the cleaning rate of the wafer 318 or the material deposited on the substrate, etc.

又，在狀態S0期間，DSPy自工具UI系統306接收TTL1訊號並將TTL1訊號提供至功率控制器PWRS0y。y MHz RF產生器的剩餘操作係類似於上面參考用以產生RF訊號之圖3A的說明。 Also, during the state S0, DSPy receives the TTL1 signal from the tool UI system 306 and provides the TTL1 signal to the power controller PWRS0y. The remaining operation of the y MHz RF generator is similar to the description above with reference to FIG. 3A for generating the RF signal.

在y MHz RF產生器的狀態S0與x MHz RF產生器的次狀態S0b期間，阻抗匹配電路302藉由RF纜線308與310自x與y MHz RF產生器接收RF訊號，然後匹配負載與源的阻抗以產生經修改的RF訊號。經修改的RF訊號係藉由RF傳輸線312提供予夾頭314。在某些實施例中，在次狀態S0b期間所產生之經修改的RF訊號能控制製程率，如在晶圓318上沉積材料的沉積率、或蝕刻晶圓318或蝕刻晶圓318上之材料的蝕刻率、或濺射晶圓318或濺射沉積在晶圓318上之材料的濺射率、或清理晶圓318或清理沉積在基板上之材料的清理率等。 During the state S0 of the y MHz RF generator and the sub-state S0b of the x MHz RF generator, the impedance matching circuit 302 receives RF signals from the x and y MHz RF generators through the RF cables 308 and 310, and then matches the load and the source The impedance to generate a modified RF signal. The modified RF signal is provided to the chuck 314 through the RF transmission line 312. In some embodiments, the modified RF signal generated during the sub-state S0b can control the process rate, such as the deposition rate of the deposited material on the wafer 318, or the etching of the wafer 318 or the etching of the material on the wafer 318 The etch rate of the sputtered wafer 318 or the sputtering rate of the material deposited on the wafer 318, or the cleaning rate of the wafer 318 or the material deposited on the substrate.

又，在次狀態S0a期間，DSPx將TTL5訊號與TTL1訊號提供至x MHz RF產生器的功率控制器PWRS0ax並提供至x MHz RF產生器的調整器AFTS0ax。例如，在次狀態S0a期間，DSPx將具有次狀態S0a的一部分TTL5訊號及具有狀態S0的TTL1訊號提供予功率控制器PWRS0ax及調整器AFTS0ax。功率控制器PWRS0ax在接收到TTL5訊號與TTL1訊號後決定或辨識一功率位準。例如，功率控制器PWRS0ax自功率控制器PWRS0ax的記憶體裝置辨識該功率位準，該功率位準係映射至TTL5訊號的次狀態S0a與時脈訊號TTL1的狀態S0。功率控制器PWRS0ax將該功率位準提供予RF電源322。 In addition, during the sub-state S0a, the DSPx provides the TTL5 signal and the TTL1 signal to the power controller PWRS0ax of the x MHz RF generator and to the adjuster AFTS0ax of the x MHz RF generator. For example, during the sub-state S0a, the DSPx provides a part of the TTL5 signal with the sub-state S0a and the TTL1 signal with the state S0 to the power controller PWRS0ax and the regulator AFTS0ax. The power controller PWRS0ax determines or recognizes a power level after receiving the TTL5 signal and the TTL1 signal. For example, the power controller PWRS0ax recognizes the power level from the memory device of the power controller PWRS0ax, and the power level is mapped to the secondary state S0a of the TTL5 signal and the state S0 of the clock signal TTL1. The power controller PWRS0ax provides the power level to the RF power source 322.

又，在TTL5訊號的次狀態S0a與時脈訊號TTL1的狀態S0期間，調整器AFTS0ax在接收到TTL5訊號後決定或辨識一頻率位準。例如，調整器 AFTS0ax自調整器AFTS0ax的記憶體裝置辨識該頻率位準，該頻率位準係映射至TTL5訊號的次狀態S0a與時脈訊號TTL1的狀態S0。調整器AFTS0ax將該頻率位準提供予RF電源322。 In addition, during the sub-state S0a of the TTL5 signal and the state S0 of the clock signal TTL1, the adjuster AFTS0ax determines or recognizes a frequency level after receiving the TTL5 signal. For example, adjuster The memory device of the AFTS0ax self-adjuster AFTS0ax recognizes the frequency level, and the frequency level is mapped to the secondary state S0a of the TTL5 signal and the state S0 of the clock signal TTL1. The regulator AFTS0ax provides the frequency level to the RF power source 322.

在接收到對應至次狀態S0a的該功率位準與該頻率位準後，RF電源322針對TTL5訊號的次狀態S0a與時脈訊號TTL1的狀態S0產生具有該功率位準與該頻率位準的RF訊號。在TTL5訊號的次狀態S0a與時脈訊號TTL1的狀態S0期間所產生的RF訊號係藉由RF纜線308而供給至阻抗匹配電路302。 After receiving the power level and the frequency level corresponding to the sub-state S0a, the RF power source 322 generates a power level and the frequency level for the sub-state S0a of the TTL5 signal and the state S0 of the clock signal TTL1. RF signal. The RF signal generated during the sub-state S0a of the TTL5 signal and the state S0 of the clock signal TTL1 is supplied to the impedance matching circuit 302 through the RF cable 308.

應注意，在某些實施例中在TTL5訊號的次狀態S0a與時脈訊號TTL1的狀態S0期間的功率位準及/或頻率位準係用以粗略控制製程率，如在晶圓318上沉積材料的沉積率、或蝕刻晶圓318或蝕刻晶圓318上之材料的蝕刻率、或濺射晶圓318或濺射沉積在晶圓318上之材料的濺射率、或清理晶圓318或清理沉積在晶圓318上之材料的清理率等。 It should be noted that in some embodiments, the power level and/or frequency level during the sub-state S0a of the TTL5 signal and the state S0 of the clock signal TTL1 are used to roughly control the process rate, such as depositing on the wafer 318 The deposition rate of the material, or the etching rate of the material on the etched wafer 318 or the etched wafer 318, or the sputtering rate of the sputtered wafer 318 or the material deposited on the wafer 318, or the cleaning of the wafer 318 or The cleaning rate for cleaning the materials deposited on the wafer 318, etc.

又，y MHz RF產生器在狀態S0期間的操作已於上面說明。 Furthermore, the operation of the y MHz RF generator during the state S0 has been described above.

在y MHz RF產生器的狀態S0與x MHz RF產生器的次狀態S0a期間，阻抗匹配電路302藉由RF纜線308與310自x與y MHz RF產生器接收RF訊號，然後匹配負載與源的阻抗以產生經修改的RF訊號。經修改的RF訊號係藉由RF傳輸線312提供予夾頭314。在某些實施例中，在次狀態S0b期間所產生之經修改的RF訊號能控制在晶圓318上沉積材料的沉積率、或蝕刻晶圓318或蝕刻晶圓318上之材料的蝕刻率、或濺射晶圓318或濺射沉積在晶圓318上之材料的濺射率。 During the state S0 of the y MHz RF generator and the sub-state S0a of the x MHz RF generator, the impedance matching circuit 302 receives RF signals from the x and y MHz RF generators through the RF cables 308 and 310, and then matches the load and the source The impedance to generate a modified RF signal. The modified RF signal is provided to the chuck 314 through the RF transmission line 312. In some embodiments, the modified RF signal generated during the sub-state S0b can control the deposition rate of the deposited material on the wafer 318, or the etching rate of etching the wafer 318 or etching the material on the wafer 318, Or the sputtering rate of the sputtered wafer 318 or the material deposited on the wafer 318 by sputtering.

在狀態S0期間，DSPy發送一訊號至功率控制器PWRS0y以調整在x MHz RF產生器自次狀態S0a轉換至次狀態S0b的轉換時間處或x MHz RF產生器 自次狀態S0b轉換至次狀態S0a的轉換時間處由功率控制器PWRS0y所決定的功率。所決定的功率係基於x MHz RF產生器所輸送之功率在次狀態S0a與S0b之間轉換時所發生的電漿阻抗變化來進行調整。為了補償x MHz RF產生器所輸送之功率在次狀態S0a與S0b之間轉換時的調整，自DSPx發送TTL5訊號至DSPy。x MHz RF產生器所輸送的功率的調整會造成電漿阻抗的變化。 During the state S0, DSPy sends a signal to the power controller PWRS0y to adjust the transition time of the x MHz RF generator from the sub-state S0a to the sub-state S0b or the x MHz RF generator The power determined by the power controller PWRS0y at the transition time from the secondary state S0b to the secondary state S0a. The determined power is adjusted based on the plasma impedance change that occurs when the power delivered by the x MHz RF generator is switched between the sub-states S0a and S0b. In order to compensate for the adjustment of the power delivered by the x MHz RF generator during the transition between sub-states S0a and S0b, a TTL5 signal is sent from DSPx to DSPy. The adjustment of the power delivered by the x MHz RF generator will cause the plasma impedance to change.

又，在狀態S1期間，DSPy發送一訊號至調整器AFTS0y以調整在x MHz RF產生器自次狀態S0a轉換至次狀態S0b的轉換時間處或x MHz RF產生器自次狀態S0b轉換至次狀態S0a的轉換時間處由調整器AFTS0y所決定的頻率。所決定的頻率係基於x MHz RF產生器的頻率在次狀態S0a與S0b之間轉換時所發生的電漿阻抗變化來進行調整。為了補償x MHz RF產生器所產生之RF訊號之頻率在次狀態S0a與S0b之間轉換時的調整，自DSPx發送TTL5訊號至DSPy。x MHz RF產生器所供給之RF訊號的頻率的調整會造成電漿阻抗的變化。 Also, during the state S1, DSPy sends a signal to the adjuster AFTS0y to adjust the transition time of the x MHz RF generator from the sub-state S0a to the sub-state S0b or the x MHz RF generator from the sub-state S0b to the sub-state The switching time of S0a is at the frequency determined by the regulator AFTS0y. The determined frequency is adjusted based on the plasma impedance change that occurs when the frequency of the x MHz RF generator is switched between the sub-states S0a and S0b. In order to compensate for the adjustment of the frequency of the RF signal generated by the x MHz RF generator between the sub-states S0a and S0b, the TTL5 signal is sent from DSPx to DSPy. The adjustment of the frequency of the RF signal supplied by the x MHz RF generator will cause the plasma impedance to change.

更應注意，在某些實施例中工具UI系統306藉由纜線314或和纜線314類似的另一纜線將和TTL5訊號相關的資訊(如TTL5訊號在狀態S1期間的頻率、TTL5訊號在狀態S1期間的工作週期、在TTL5訊號中次狀態S1a出現的時間、在TTL5訊號中次狀態S1b出現的時間、TTL5訊號在狀態S0期間的頻率、TTL5訊號在狀態S0期間的工作週期、在TTL5訊號中次狀態S0a出現的時間、在TTL5訊號中次狀態S0b出現的時間等)提供至DSPy，而非自DSPx發送TTL5訊號至DSPy。例如，自工具UI系統306將內含和TTL5訊號相關之資訊的資料檔案提供至DSPy。DSPy包含虛擬鎖相迴路，虛擬鎖相迴路所產生的一訊號係鎖定至TTL5訊號的頻率且用以調整功率控制器PWRS0y所決定的功率及/或用以調整調整器AFTS0y所決定的頻率。 It should also be noted that in some embodiments, the tool UI system 306 uses the cable 314 or another cable similar to the cable 314 to obtain information related to the TTL5 signal (such as the frequency of the TTL5 signal during the state S1, the TTL5 signal The duty cycle during the state S1, the time that the secondary state S1a appears in the TTL5 signal, the time that the secondary state S1b appears in the TTL5 signal, the frequency of the TTL5 signal during the state S0, the duty cycle of the TTL5 signal during the state S0, The time when the secondary state S0a appears in the TTL5 signal, the time when the secondary state S0b appears in the TTL5 signal, etc.) are provided to DSPy instead of sending the TTL5 signal from DSPx to DSPy. For example, the self-tool UI system 306 provides a data file containing information related to the TTL5 signal to DSPy. DSPy includes a virtual phase-locked loop. A signal generated by the virtual phase-locked loop is locked to the frequency of the TTL5 signal and used to adjust the power determined by the power controller PWRS0y and/or used to adjust the frequency determined by the regulator AFTS0y.

又，x MHz RF產生器在次狀態S1a與S1b期間的操作以及y MHz RF產生器在狀態S1期間的操作係類似於參考圖3A所述之內容。 In addition, the operation of the x MHz RF generator during the sub-states S1a and S1b and the operation of the y MHz RF generator during the state S1 are similar to those described with reference to FIG. 3A.

圖7B顯示系統710之一實施例，在系統710中，由DSPx產生時脈訊號TTL1而非工具UI系統306(圖7A)。系統710包含工具UI系統307。DSPx包含能產生時脈訊號TTL1的時脈源並將時脈訊號TTL1與TTL5訊號提供予y MHz RF產生器的DSPy。系統710的剩餘操作係類於圖7A的系統700。 FIG. 7B shows an embodiment of the system 710. In the system 710, the clock signal TTL1 is generated by the DSPx instead of the tool UI system 306 (FIG. 7A). The system 710 includes a tool UI system 307. DSPx includes a clock source that can generate a clock signal TTL1 and provides TTL1 and TTL5 clock signals to a y MHz RF generator DSPy. The remaining operation of the system 710 is similar to the system 700 of FIG. 7A.

在某些實施例中，x MHz RF產生器所供給之RF訊號在次狀態S1a、S1b、S0a與S0b期間的功率的頻率係與訊號602(圖6A)的頻率相同。 In some embodiments, the frequency of the power of the RF signal supplied by the x MHz RF generator during the sub-states S1a, S1b, S0a, and S0b is the same as the frequency of the signal 602 (FIG. 6A).

在各種實施例中，與TTL5訊號相關的資訊係自DSPx藉由將DSPx連接至DSPy的纜線提供予DSPy，而非自DSPx藉由纜線將TTL5訊號發送至DSPy。例如，自DSPx將內含有與TTL5訊號相關之資訊的資料檔案提供予DSPy。DSPy包含虛擬鎖相迴路，虛擬鎖相迴路所產生的一訊號係鎖定至TTL5訊號的頻率且用以調整功率控制器PWRS0y所決定的功率及/或用以調整調整器AFTS0y所決定的頻率。 In various embodiments, the information related to the TTL5 signal is provided to DSPy from the DSPx through a cable connecting the DSPx to the DSPy, rather than the TTL5 signal is sent from the DSPx to the DSPy through the cable. For example, from DSPx, a data file containing information related to TTL5 signals is provided to DSPy. DSPy includes a virtual phase-locked loop. A signal generated by the virtual phase-locked loop is locked to the frequency of the TTL5 signal and used to adjust the power determined by the power controller PWRS0y and/or used to adjust the frequency determined by the regulator AFTS0y.

圖8A顯示圖800之一實施例，圖800係用以例示y MHz RF產生器所產生之RF訊號在狀態S1與S0兩狀態期間的脈動。y MHz RF產生器所產生之RF訊號的脈動會在狀態S1期間造成兩個次狀態S1a與S1b、並在狀態S0期間造成兩個次狀態S0a與S0b。圖800繪示RF訊號802之經輸送的功率(如一功率位準)對時間的關係，此功率位準為y MHz RF產生器所產生之RF訊號及朝向y MHz RF產生器反射之RF訊號的函數。 FIG. 8A shows an embodiment of a diagram 800, which is used to illustrate the pulsation of the RF signal generated by the y MHz RF generator during the two states S1 and S0. The pulsation of the RF signal generated by the y MHz RF generator will cause two sub-states S1a and S1b during the state S1, and two sub-states S0a and S0b during the state S0. Figure 800 shows the relationship between the transmitted power (such as a power level) of the RF signal 802 versus time. This power level is the ratio of the RF signal generated by the y MHz RF generator and the RF signal reflected toward the y MHz RF generator function.

在TTL1訊號的狀態S0期間，RF訊號802在次狀態S0a與S0b之間交替。又，在TTL1訊號的狀態S1期間，RF訊號802在次狀態S1a與S1b之間交替。 During the state S0 of the TTL1 signal, the RF signal 802 alternates between the sub-states S0a and S0b. Also, during the state S1 of the TTL1 signal, the RF signal 802 alternates between the sub-states S1a and S1b.

在某些實施例中，RF訊號802在次狀態S0b期間的功率位準係低於或高於RF訊號802在次狀態S1b期間的功率位準。 In some embodiments, the power level of the RF signal 802 during the sub-state S0b is lower or higher than the power level of the RF signal 802 during the sub-state S1b.

應注意，在TTL1訊號的狀態S1期間使用RF訊號802的次狀態S1a與S1b能協助精細調整在狀態S1期間的蝕刻率、沉積率、濺射率、或清理率。 It should be noted that using the sub-states S1a and S1b of the RF signal 802 during the state S1 of the TTL1 signal can assist in fine adjustment of the etching rate, deposition rate, sputtering rate, or cleaning rate during the state S1.

圖8B顯示圖810的一實施例，圖810係用以例示使用x MHz RF產生器並協同使用產生具有四個次狀態S0a、S0b、S1a與S1b之RF訊號802的y MHz RF產生器。當y MHz RF產生器產生具有次狀態S1a與S1b之RF訊號802時，x MHz RF產生器產生具有狀態S1的RF訊號812。在某些實施例中，當製程率的粗略控制為恆定或實質上恆定時，使用y MHz RF產生器所產生之RF訊號802的次狀態S1a與S1b可精細控制製程率，如蝕刻率、清理率、沉積率、濺射率等。在某些實施例中，當x MHz RF產生器係操作在對應至狀態S1的功率位準時，製程率的粗略控制係實質上恆定。又，當y MHz RF產生器產生具有次狀態S0a與S0b之RF訊號802時，x MHz RF產生器產生具有狀態S0的RF訊號812。 FIG. 8B shows an embodiment of FIG. 810, which is used to illustrate a y MHz RF generator that uses an x MHz RF generator and is used in conjunction to generate an RF signal 802 with four sub-states S0a, S0b, S1a, and S1b. When the y MHz RF generator generates the RF signal 802 with the sub-states S1a and S1b, the x MHz RF generator generates the RF signal 812 with the state S1. In some embodiments, when the rough control of the process rate is constant or substantially constant, the sub-states S1a and S1b of the RF signal 802 generated by the y MHz RF generator can be used to finely control the process rate, such as etching rate, cleaning Rate, deposition rate, sputtering rate, etc. In some embodiments, when the x MHz RF generator is operating at the power level corresponding to state S1, the rough control of the process rate is substantially constant. Furthermore, when the y MHz RF generator generates the RF signal 802 with the sub-states S0a and S0b, the x MHz RF generator generates the RF signal 812 with the state S0.

圖8C顯示圖820的一實施例，圖820係用以例示在TTL1訊號的狀態S0期間之工作週期係不同於在TTL1訊號的狀態S1期間之工作週期。圖820繪示60MHz RF產生器所輸送之功率對時間t的關係。經輸送的功率係顯示為脈動訊號822。應注意，脈動訊號822在狀態S1期間的工作週期係大於50%，且在狀態S1期間所佔據的時間係等於在狀態S0期間所佔據的時間。例如，訊號822在次狀態S1a期間所佔據的時間係多於在次狀態S1b期間所佔據的時間。應注意，經輸送的功率訊號822在狀態S0期間的工作週期為50%。 FIG. 8C shows an embodiment of FIG. 820, which is used to illustrate that the duty cycle during the state S0 of the TTL1 signal is different from the duty cycle during the state S1 of the TTL1 signal. Figure 820 shows the power delivered by a 60MHz RF generator versus time t. The transmitted power is displayed as a pulsation signal 822. It should be noted that the duty cycle of the pulsation signal 822 during the state S1 is greater than 50%, and the time occupied during the state S1 is equal to the time occupied during the state S0. For example, the time occupied by the signal 822 during the secondary state S1a is more than the time occupied during the secondary state S1b. It should be noted that the duty cycle of the transmitted power signal 822 during the state S0 is 50%.

在某些實施例中，訊號822在狀態S1期間的工作週期係小於50%。例如，經輸送的功率訊號在次狀態S1a期間所佔據的時間係少於在次狀態S1b期間所佔據的時間。 In some embodiments, the duty cycle of the signal 822 during the state S1 is less than 50%. For example, the time occupied by the transmitted power signal during the sub-state S1a is less than the time during the sub-state S1b.

更應注意，訊號802(圖8A至8B)在狀態S0與S1每一者期間的工作週期為50%。 It should be noted that the duty cycle of the signal 802 (FIGS. 8A to 8B) during each of the states S0 and S1 is 50%.

在某些實施例中，60MHz RF產生器所產生的脈動經輸送的功率訊號在狀態S0期間的工作週期係大於或小於50%，且脈動經輸送的功率訊號在狀態S1期間的工作週期為50%。 In some embodiments, the duty cycle of the pulsating transmitted power signal generated by the 60MHz RF generator during state S0 is greater than or less than 50%, and the duty cycle of the pulsating transmitted power signal during state S1 is 50%. %.

在各種實施例中，60MHz RF產生器所產生的脈動經輸送的功率訊號在狀態S0期間的工作週期係大於或小於50%，且脈動經輸送的功率訊號在狀態S1期間的工作週期係大於或小於50%。 In various embodiments, the duty cycle of the pulsating transmitted power signal generated by the 60MHz RF generator during state S0 is greater than or less than 50%, and the duty cycle of the pulsating transmitted power signal during state S1 is greater than or Less than 50%.

在數個實施例中，y MHz RF產生器所輸送之功率的狀態S1佔據時間係少於y MHz RF產生器所輸送之功率的狀態S0佔據時間。在此些實施例中，經輸送的功率在狀態S0與S1每一者期間的工作週期皆為50%。 In several embodiments, the occupation time of the state S1 of the power delivered by the y MHz RF generator is less than the occupation time of the state S0 of the power delivered by the y MHz RF generator. In these embodiments, the duty cycle of the delivered power during each of the states S0 and S1 is 50%.

在各種實施例中，y MHz RF產生器所輸送之功率的狀態S1佔據時間係少於或多於y MHz RF產生器所輸送之功率的狀態S0佔據時間。在此些實施例中，經輸送的功率在狀態S1期間的工作週期係大於或小於50%且經輸送的功率在狀態S0期間的工作週期係等於50%。 In various embodiments, the occupancy time of the state S1 of the power delivered by the y MHz RF generator is less than or more than the occupancy time of the state S0 of the power delivered by the y MHz RF generator. In these embodiments, the duty cycle of the delivered power during the state S1 is greater than or less than 50% and the duty cycle of the delivered power during the state S0 is equal to 50%.

在某些實施例中，y MHz RF產生器所輸送之功率的狀態S1佔據時間係少於或多於y MHz RF產生器所輸送之功率的狀態S0佔據時間。在此些實施例中，經輸送的功率在狀態S1期間的工作週期係等於50%且經輸送的功率在狀態S0期間的工作週期係大於或小於50%。 In some embodiments, the occupancy time of the state S1 of the power delivered by the y MHz RF generator is less than or more than the occupancy time of the state S0 of the power delivered by the y MHz RF generator. In these embodiments, the duty cycle of the delivered power during the state S1 is equal to 50% and the duty cycle of the delivered power during the state S0 is greater than or less than 50%.

在各種實施例中，y MHz RF產生器所輸送之功率的狀態S1佔據時間係少於或多於y MHz RF產生器所輸送之功率的狀態S0佔據時間。在此些實施例中，經輸送的功率在狀態S1期間的工作週期係大於或小於50%且經輸送的功率在狀態S0期間的工作週期係大於或小於50%。 In various embodiments, the occupancy time of the state S1 of the power delivered by the y MHz RF generator is less than or more than the occupancy time of the state S0 of the power delivered by the y MHz RF generator. In these embodiments, the duty cycle of the delivered power during the state S1 is greater than or less than 50% and the duty cycle of the delivered power during the state S0 is greater than or less than 50%.

在某些實施例中，TTL訊號所具有之頻率係等於脈動訊號822所具有的頻率。TTL訊號係由產生TTL5訊號的裝置所產生。例如，DSPx自TTL1訊號及調變訊號產生TTL訊號。調變訊號調變TTL1訊號以產生TTL訊號。 In some embodiments, the frequency of the TTL signal is equal to the frequency of the pulsation signal 822. The TTL signal is generated by the device that generates the TTL5 signal. For example, DSPx generates TTL signals from TTL1 signals and modulated signals. The modulation signal modulates the TTL1 signal to generate a TTL signal.

圖9A顯示系統900之一實施例，系統900係用以例示在y MHz RF產生器中使用四個次狀態S0a、S0b、S1a與S1b。系統900包含電漿室304、x MHz RF產生器、y MHz RF產生器及工具UI系統306。工具UI系統306的時脈源產生時脈訊號TTL1、並藉由纜線313將時脈訊號TTL1提供予DSPx及DSPy。 FIG. 9A shows an embodiment of the system 900. The system 900 is used to illustrate the use of four sub-states S0a, S0b, S1a, and S1b in a y MHz RF generator. The system 900 includes a plasma chamber 304, an x MHz RF generator, a y MHz RF generator, and a tool UI system 306. The clock source of the tool UI system 306 generates the clock signal TTL1 and provides the clock signal TTL1 to the DSPx and DSPy through the cable 313.

在次狀態S1b期間。DSPx自TTL1訊號產生TTL5訊號。在各種實施例中，RF訊號802(圖8A與8B)的頻率係與TTL5訊號的頻率相同。在某些實施例中，RF訊號802所具有的頻率係與TTL4訊號的頻率相同。 During the secondary state S1b. DSPx generates TTL5 signal from TTL1 signal. In various embodiments, the frequency of the RF signal 802 (FIGS. 8A and 8B) is the same as the frequency of the TTL5 signal. In some embodiments, the frequency of the RF signal 802 is the same as the frequency of the TTL4 signal.

又，在次狀態S1b期間，DSPx將TTL5訊號提供予DSPy。DSPy將收到的TTL5訊號與TTL1訊號提供予y MHz RF產生器的功率控制器PWRS1by及y MHz RF產生器的調整器AFTS1by。例如，在次狀態S1b期間，DSPy將具有次狀態S1b的部分TTL5訊號及具有狀態S1的TTL1訊號提供予功率控制器PWRS1by及調整器AFTS1by。功率控制器PWRS1by在接收到TTL5訊號與TTL1訊號後決定或辨識功率位準。例如，功率控制器PWRS1by自功率控制器PWRS1by之記憶體裝置辨識一功率位準，此功率位準係映射至訊號TTL5的次狀態S1b以及時脈訊號TTL1的狀態S1。功率控制器PWRS1by將此功率位準提供予RF電源324。 Also, during the sub-state S1b, DSPx provides the TTL5 signal to DSPy. DSPy provides the received TTL5 signal and TTL1 signal to the power controller PWRS1by of the y MHz RF generator and the adjuster AFTS1by of the y MHz RF generator. For example, during the sub-state S1b, DSPy provides part of the TTL5 signal with the sub-state S1b and the TTL1 signal with the state S1 to the power controller PWRS1by and the regulator AFTS1by. The power controller PWRS1by determines or recognizes the power level after receiving the TTL5 signal and TTL1 signal. For example, the power controller PWRS1by recognizes a power level from the memory device of the power controller PWRS1by, and this power level is mapped to the sub-state S1b of the signal TTL5 and the state S1 of the clock signal TTL1. The power controller PWRS1by provides this power level to the RF power source 324.

又，在TTL5訊號的次狀態S1b與TTL1訊號的狀態S1期間，調整器AFTS1by在接收到TTL5訊號後決定或辨識一頻率位準。例如，調整器AFTS1by自調整器AFTS1by的記憶體裝置辨識該頻率位準，此頻率位準係映射至TTL5訊號的次狀態S1b與TTL1訊號的狀態S1。調整器AFTS1by將此頻率位準提供予RF電源324。 Furthermore, during the sub-state S1b of the TTL5 signal and the state S1 of the TTL1 signal, the adjuster AFTS1by determines or recognizes a frequency level after receiving the TTL5 signal. For example, the adjuster AFTS1by recognizes the frequency level from the memory device of the self-adjuster AFTS1by, and the frequency level is mapped to the sub-state S1b of the TTL5 signal and the state S1 of the TTL1 signal. The regulator AFTS1by provides this frequency level to the RF power source 324.

在接收到對應至TTL5訊號的次狀態S1b與TTL1訊號的狀態S1之該功率位準與該頻率位準後，RF電源324針對次狀態S1b產生具有該功率位準與該頻率位準的RF訊號。在TTL5訊號的次狀態S1b與TTL1訊號的狀態S1期間所產生的RF訊號係藉由RF纜線310供給至阻抗匹配電路302。 After receiving the power level and the frequency level corresponding to the sub-state S1b of the TTL5 signal and the state S1 of the TTL1 signal, the RF power supply 324 generates an RF signal with the power level and the frequency level for the sub-state S1b . The RF signal generated during the sub-state S1b of the TTL5 signal and the state S1 of the TTL1 signal is supplied to the impedance matching circuit 302 through the RF cable 310.

應注意，在某些實施例中在TTL5訊號的次狀態S1b與TTL1訊號的狀態S1期間的該功率位準及/或該頻率位準係用以精細控制製程率，如在晶圓318上沉積材料的沉積率、或蝕刻晶圓318或蝕刻晶圓318上之材料的蝕刻率、或濺射晶圓318或濺射沉積在晶圓318上之材料的濺射率、或清理晶圓318或清理晶圓318上之材料的清理率等。 It should be noted that in some embodiments, the power level and/or the frequency level during the sub-state S1b of the TTL5 signal and the state S1 of the TTL1 signal are used to finely control the process rate, such as depositing on the wafer 318 The deposition rate of the material, or the etching rate of the material on the etched wafer 318 or the etched wafer 318, or the sputtering rate of the sputtered wafer 318 or the material deposited on the wafer 318, or the cleaning of the wafer 318 or The cleaning rate of the material on the cleaning wafer 318, etc.

又，在狀態S1期間，DSPx自工具UI系統306接收TTL1訊號、並將TTL1訊號提供予功率控制器PWRS1x。x MHz RF產生器的剩餘操作係類似於上面參考用以產生RF訊號之圖5A的說明。 Also, during the state S1, the DSPx receives the TTL1 signal from the tool UI system 306 and provides the TTL1 signal to the power controller PWRS1x. The remaining operation of the x MHz RF generator is similar to the description above with reference to FIG. 5A for generating the RF signal.

在x MHz RF產生器的狀態S1與y MHz RF產生器的次狀態S1b期間，阻抗匹配電路302藉由RF纜線308與310自x與y MHz RF產生器接收RF訊號，然後匹配負載與源的阻抗以產生經修改的RF訊號。經修改的RF訊號係藉由RF傳輸線312提供予夾頭314。在某些實施例中，在次狀態S1b期間所產生之經修改的RF訊號能控制製程率，如在晶圓318上沉積材料的沉積率、或蝕刻晶圓318或蝕 刻晶圓318上之材料的蝕刻率、或濺射晶圓318或濺射沉積在晶圓318上之材料的濺射率、或清理晶圓318或清理晶圓318上之材料的清理率等。 During the state S1 of the x MHz RF generator and the sub-state S1b of the y MHz RF generator, the impedance matching circuit 302 receives RF signals from the x and y MHz RF generators through the RF cables 308 and 310, and then matches the load and the source The impedance to generate a modified RF signal. The modified RF signal is provided to the chuck 314 through the RF transmission line 312. In some embodiments, the modified RF signal generated during the sub-state S1b can control the process rate, such as the deposition rate of the deposited material on the wafer 318, or the etching or etching of the wafer 318 The etching rate of the material on the engraved wafer 318, or the sputtering rate of the sputtered wafer 318 or the material deposited on the wafer 318, or the cleaning rate of the cleaned wafer 318 or the material on the cleaned wafer 318, etc. .

又，在TTL5訊號的次狀態S1a及TTL1訊號的狀態S1期間，DSPy將接收到的TTL5訊號與TTL1訊號提供予y MHz RF產生器的功率控制器PWRS1ay及y MHz RF產生器的調整器AFTS1ay。例如，在TTL5訊號的次狀態S1a及TTL1訊號的狀態S1期間，DSPy將具有次狀態S1a的一部分TTL5訊號及具有狀態S1的TTL1訊號提供予功率控制器PWRS1ay及調整器AFTS1ay。功率控制器PWRS1ay在接收到TTL5訊號與TTL1訊號後決定或辨識一功率位準。例如，功率控制器PWRS1ay自功率控制器PWRS1ay的記憶體裝置辨識該功率位準，該功率位準係映射至TTL5訊號的次狀態S1a與時脈訊號TTL1的狀態S1。功率控制器PWRS1ay將該功率位準提供予RF電源324。 In addition, during the sub-state S1a of the TTL5 signal and the state S1 of the TTL1 signal, DSPy provides the received TTL5 signal and TTL1 signal to the power controller PWRS1ay of the y MHz RF generator and the adjuster AFTS1ay of the y MHz RF generator. For example, during the sub-state S1a of the TTL5 signal and the state S1 of the TTL1 signal, DSPy provides a part of the TTL5 signal with the sub-state S1a and the TTL1 signal with the state S1 to the power controller PWRS1ay and the regulator AFTS1ay. The power controller PWRS1ay determines or recognizes a power level after receiving the TTL5 signal and the TTL1 signal. For example, the power controller PWRS1ay recognizes the power level from the memory device of the power controller PWRS1ay, and the power level is mapped to the secondary state S1a of the TTL5 signal and the state S1 of the clock signal TTL1. The power controller PWRS1ay provides the power level to the RF power source 324.

又，在TTL5訊號的次狀態S1a與時脈訊號TTL1的狀態S1期間，調整器AFTS1ay在接收到TTL5訊號後決定或辨識一頻率位準。例如，調整器AFTS1ay自調整器AFTS1ay的記憶體裝置辨識該頻率位準，該頻率位準係映射至TTL5訊號的次狀態S1a與時脈訊號TTL1的狀態S1。調整器AFTS1ay將該頻率位準提供予RF電源324。 Furthermore, during the sub-state S1a of the TTL5 signal and the state S1 of the clock signal TTL1, the adjuster AFTS1ay determines or recognizes a frequency level after receiving the TTL5 signal. For example, the AFTS1ay self-adjuster AFTS1ay's memory device recognizes the frequency level, and the frequency level is mapped to the sub-state S1a of the TTL5 signal and the state S1 of the clock signal TTL1. The regulator AFTS1ay provides the frequency level to the RF power source 324.

在接收到對應至TTL5訊號的次狀態S1a與時脈訊號TTL1的狀態S1的該功率位準與該頻率位準後，RF電源324針對次狀態S1a產生具有該功率位準與該頻率位準的RF訊號。在TTL5訊號的次狀態S1a與時脈訊號TTL1的狀態S1期間所產生的RF訊號係藉由RF纜線310而供給至阻抗匹配電路302。 After receiving the power level and the frequency level corresponding to the sub-state S1a of the TTL5 signal and the state S1 of the clock signal TTL1, the RF power supply 324 generates a power level and the frequency level for the sub-state S1a RF signal. The RF signal generated during the sub-state S1a of the TTL5 signal and the state S1 of the clock signal TTL1 is supplied to the impedance matching circuit 302 through the RF cable 310.

應注意，在某些實施例中在TTL5訊號的次狀態S1a與時脈訊號TTL1的狀態S1期間的功率位準及/或頻率位準係用以精細控制與晶圓318相關的 製程率，如在晶圓318上沉積材料的沉積率、或蝕刻晶圓318或蝕刻晶圓318上之材料的蝕刻率、或濺射晶圓318或濺射沉積在晶圓318上之材料的濺射率、或清理晶圓318或清理晶圓318上之材料的清理率等。 It should be noted that, in some embodiments, the power level and/or frequency level during the sub-state S1a of the TTL5 signal and the state S1 of the clock signal TTL1 are used to finely control the related wafer 318 Process rate, such as the deposition rate of the material deposited on the wafer 318, or the etching rate of the material on the etched wafer 318 or the etched wafer 318, or the sputtered wafer 318 or the material deposited on the wafer 318 Sputtering rate, or cleaning rate of cleaning wafer 318 or cleaning materials on wafer 318, etc.

又，x MHz RF產生器在狀態S1期間的操作已於上面說明。 Furthermore, the operation of the x MHz RF generator during the state S1 has been described above.

在x MHz RF產生器的狀態S1與y MHz RF產生器的次狀態S1a期間，阻抗匹配電路302藉由RF纜線308與310自x與y MHz RF產生器接收RF訊號，然後匹配負載與源的阻抗以產生經修改的RF訊號。經修改的RF訊號係藉由RF傳輸線312提供予夾頭314。在某些實施例中，在次狀態S1b期間所產生之經修改的RF訊號能控制製程率，如在晶圓318上沉積材料的沉積率、或蝕刻晶圓318或蝕刻沉積在晶圓318上之材料的蝕刻率、或濺射晶圓318或濺射沉積在晶圓318上之材料的濺射率、或清理晶圓318或清理晶圓318上之材料的清理率等。 During the state S1 of the x MHz RF generator and the sub-state S1a of the y MHz RF generator, the impedance matching circuit 302 receives RF signals from the x and y MHz RF generators through the RF cables 308 and 310, and then matches the load and the source The impedance to generate a modified RF signal. The modified RF signal is provided to the chuck 314 through the RF transmission line 312. In some embodiments, the modified RF signal generated during the sub-state S1b can control the process rate, such as the deposition rate of the deposited material on the wafer 318, or the etching of the wafer 318 or the etching deposited on the wafer 318 The etching rate of the material on the sputtered wafer 318 or the sputtering rate of the material deposited on the wafer 318 by the sputtering, or the cleaning rate of the wafer 318 or the material on the wafer 318.

又，y MHz RF產生器在次狀態S0a與S0b期間的操作以及x MHz RF產生器在狀態S0期間的操作係類似於參考圖5A所述之內容。 In addition, the operation of the y MHz RF generator during the sub-states S0a and S0b and the operation of the x MHz RF generator during the state S0 are similar to those described with reference to FIG. 5A.

圖9B顯示系統910的一實施例，在系統910中係由DSPx產生時脈訊號TTL1，而非工具UI系統306(圖7A)。系統910包含工具UI系統307。DSPx包含能產生時脈訊號TTL1的時脈源。DSPx自時脈訊號TTL1產生數位脈動訊號TTL5，藉由纜線將數位脈動訊號TTL5提供予y MHz RF產生器的DSPy、並藉由纜線將TTL1訊號提供予DSPy。系統910的剩餘操作係類似於圖9A的系統900。 FIG. 9B shows an embodiment of the system 910. In the system 910, the clock signal TTL1 is generated by the DSPx instead of the tool UI system 306 (FIG. 7A). The system 910 includes a tool UI system 307. DSPx includes a clock source that can generate the clock signal TTL1. DSPx generates a digital pulsation signal TTL5 from the clock signal TTL1, provides the digital pulsation signal TTL5 to the DSPy of the y MHz RF generator through a cable, and provides the TTL1 signal to DSPy through the cable. The remaining operation of the system 910 is similar to the system 900 of FIG. 9A.

在某些實施例中，y MHz RF產生器所供給之RF訊號在次狀態S1a、S1b、S0a與S0b期間的功率的頻率係與訊號802(圖8A)的頻率相同。 In some embodiments, the frequency of the power of the RF signal supplied by the y MHz RF generator during the sub-states S1a, S1b, S0a, and S0b is the same as the frequency of the signal 802 (FIG. 8A).

圖10A顯示圖1000的一實施例，圖1000係用以例示x與y MHz RF產生器兩者的多個次狀態。圖1000繪示經輸送的功率對時間的關係。x與y MHz RF產生器所輸送的功率係顯示於圖1000中。當x MHz RF產生器在TTL1訊號的狀態S1期間自次狀態S1bx轉換至次狀態S1ax時，y MHz產生器自次狀態S1by轉換至次狀態S1ay。又，當x MHz RF產生器在TTL1訊號的狀態S1期間自次狀態S1ax轉換至次狀態S1bx時，y MHz產生器自次狀態S1ay轉換至次狀態S1by。又，當x MHz RF產生器在TTL1訊號的狀態S1期間處於次狀態S1ax時，y MHz RF產生器係處於次狀態S1ay。又，當x MHz RF產生器在TTL1訊號的狀態S1期間處於次狀態S1bx時，y MHz RF產生器係處於次狀態S1by。 FIG. 10A shows an embodiment of FIG. 1000, which is used to illustrate multiple sub-states of both the x and y MHz RF generators. Graph 1000 shows the relationship of delivered power versus time. x and y MHz The power delivered by the RF generator is shown in Figure 1000. When the x MHz RF generator transitions from the secondary state S1bx to the secondary state S1ax during the state S1 of the TTL1 signal, the y MHz generator transitions from the secondary state S1by to the secondary state Say. Furthermore, when the x MHz RF generator transitions from the sub-state S1ax to the sub-state S1bx during the state S1 of the TTL1 signal, the y MHz generator transitions from the sub-state S1ay to the sub-state S1by. In addition, when the x MHz RF generator is in the sub-state S1ax during the state S1 of the TTL1 signal, the y MHz RF generator is in the sub-state S1ay. Furthermore, when the x MHz RF generator is in the secondary state S1bx during the state S1 of the TTL1 signal, the y MHz RF generator is in the secondary state S1by.

當x MHz RF產生器在TTL1訊號的狀態S0期間自次狀態S0bx轉換至次狀態S0ax時，y MHz產生器自次狀態S0by轉換至次狀態S0ay。又，當x MHz RF產生器在TTL1訊號的狀態S0期間自次狀態S0ax轉換至次狀態S0bx時，y MHz產生器自次狀態S0ay轉換至次狀態S0by。又，當x MHz RF產生器在TTL1訊號的狀態S0期間處於次狀態S0ax時，y MHz RF產生器係處於次狀態S0ay。又，當x MHz RF產生器在TTL1訊號的狀態S0的期間處於次狀態S0bx時，y MHz RF產生器係處於次狀態S0by。 When the x MHz RF generator transitions from the secondary state S0bx to the secondary state Soax during the state S0 of the TTL1 signal, the y MHz generator transitions from the secondary state S0by to the secondary state Say. Moreover, when the x MHz RF generator transitions from the sub-state S0ax to the sub-state S0bx during the state S0 of the TTL1 signal, the y MHz generator transitions from the sub-state Soay to the sub-state S0by. Also, when the x MHz RF generator is in the secondary state Soax during the state S0 of the TTL1 signal, the y MHz RF generator is in the secondary state Soay. Moreover, when the x MHz RF generator is in the secondary state S0bx during the state S0 of the TTL1 signal, the y MHz RF generator is in the secondary state S0by.

應注意，y MHz RF產生器在次狀態S1ay期間所輸送之訊號1002之功率之經輸送的功率位準係大於次狀態S1by期間的。又，x MHz RF產生器在次狀態S1ax期間所輸送之訊號1004之功率之經輸送的功率位準係大於次狀態S1bx期間的。 It should be noted that the transmitted power level of the power of the signal 1002 delivered by the y MHz RF generator during the sub-state S1ay is greater than that during the sub-state S1by. In addition, the transmitted power level of the power of the signal 1004 delivered by the x MHz RF generator during the sub-state S1ax is greater than that during the sub-state S1bx.

又，應注意，y MHz RF產生器在次狀態S0ay期間所輸送之訊號1002之功率之經輸送的功率位準係大於次狀態S0by期間的。又，x MHz RF產生器在次狀態S0ax期間所輸送之訊號1004之功率之經輸送的功率位準係大於次狀態S0bx期間的。 Also, it should be noted that the transmitted power level of the power of the signal 1002 delivered by the y MHz RF generator during the sub-state Say is greater than that during the sub-state Soby. In addition, the transmitted power level of the power of the signal 1004 delivered by the x MHz RF generator during the sub-state Soax is greater than that during the sub-state S0bx.

在某些實施例中，y MHz RF產生器在次狀態S0by期間所輸送之訊號1002之功率之經輸送的功率位準係小於x MHz RF產生器在次狀態S0bx期間所輸送之訊號1004之功率之經輸送的功率位準。 In some embodiments, the transmitted power level of the power of the signal 1002 delivered by the y MHz RF generator during the substate S0by is less than the power of the signal 1004 delivered by the x MHz RF generator during the substate S0bx The delivered power level.

在數個實施例中，y MHz RF產生器在次狀態S1by期間所輸送之訊號1002之功率之經輸送的功率位準係小於x MHz RF產生器在次狀態S1bx期間所輸送之訊號1004之功率之經輸送的功率位準。 In several embodiments, the transmitted power level of the power of the signal 1002 delivered by the y MHz RF generator during the sub-state S1by is less than the power of the signal 1004 delivered by the x MHz RF generator during the sub-state S1bx The delivered power level.

圖10B顯示圖1010的一實施例，圖1010係用以例示x與y MHz RF產生器兩者的多個次狀態。圖1010繪示經輸送的功率對時間的關係。x與y MHz RF產生器所輸送之功率係顯示於圖1010中。當x MHz RF產生器在TTL1訊號的狀態S1期間自次狀態S1bx轉換至次狀態S1ax時，y MHz產生器自次狀態S1ay轉換至次狀態S1by。又，當x MHz RF產生器在TTL1訊號的狀態S1期間自次狀態S1ax轉換至次狀態S1bx時，y MHz產生器自次狀態S1by轉換至次狀態S1ay。又，當x MHz RF產生器在TTL1訊號的狀態S1期間處於次狀態S1ax時，y MHz RF產生器係處於次狀態S1by。又，當x MHz RF產生器在TTL1訊號的狀態S1期間處於次狀態S1bx時，y MHz RF產生器係處於次狀態S1ay。 FIG. 10B shows an embodiment of FIG. 1010. FIG. 1010 is used to illustrate multiple sub-states of both the x and y MHz RF generators. Fig. 1010 shows the relationship between the delivered power and time. The power delivered by the x and y MHz RF generators is shown in Figure 1010. When the x MHz RF generator transitions from the secondary state S1bx to the secondary state S1ax during the state S1 of the TTL1 signal, the y MHz generator transitions from the secondary state Say to the secondary state S1by. Furthermore, when the x MHz RF generator transitions from the sub-state S1ax to the sub-state S1bx during the state S1 of the TTL1 signal, the y MHz generator transitions from the sub-state S1by to the sub-state S1ay. Moreover, when the x MHz RF generator is in the secondary state S1ax during the state S1 of the TTL1 signal, the y MHz RF generator is in the secondary state S1by. Furthermore, when the x MHz RF generator is in the secondary state S1bx during the state S1 of the TTL1 signal, the y MHz RF generator is in the secondary state S1ay.

當x MHz RF產生器在TTL1訊號的狀態S0期間自次狀態S0bx轉換至次狀態S0ax時，y MHz產生器自次狀態S0ay轉換至次狀態S0by。又，當x MHz RF產生器在TTL1訊號的狀態S0期間自次狀態S0ax轉換至次狀態S0bx時，y MHz產生器自次狀態S0by轉換至次狀態S0ay。又，當x MHz RF產生器在TTL1訊號的狀態S0期間處於次狀態S0ax時，y MHz RF產生器係處於次狀態S0by。又，當x MHz RF產生器在TTL1訊號的狀態S0期間處於次狀態S0bx時，y MHz RF產生器係處於次狀態S0ay。 When the x MHz RF generator transitions from the secondary state S0bx to the secondary state Soax during the state S0 of the TTL1 signal, the y MHz generator transitions from the secondary state Soay to the secondary state S0by. Furthermore, when the x MHz RF generator transitions from the sub-state S0ax to the sub-state S0bx during the state S0 of the TTL1 signal, the y MHz generator transitions from the sub-state S0by to the sub-state Soay. Furthermore, when the x MHz RF generator is in the secondary state S0ax during the state S0 of the TTL1 signal, the y MHz RF generator is in the secondary state S0by. Furthermore, when the x MHz RF generator is in the secondary state S0bx during the state S0 of the TTL1 signal, the y MHz RF generator is in the secondary state Soay.

應注意，y MHz RF產生器在次狀態S1ay期間所產生之經輸送的功率訊號1012之經輸送的功率位準係大於次狀態S1by期間的。又，x MHz RF產生器在次狀態S1ax期間所產生之經輸送的功率訊號1014之經輸送的功率位準係大於次狀態S1bx期間的。 It should be noted that the delivered power level of the delivered power signal 1012 generated by the y MHz RF generator during the sub-state S1ay is greater than that during the sub-state S1by. In addition, the delivered power level of the delivered power signal 1014 generated by the x MHz RF generator during the sub-state S1ax is greater than that during the sub-state S1bx.

又，應注意，y MHz RF產生器在次狀態S0ay期間所產生之經輸送的功率訊號1012之經輸送的功率位準係大於次狀態S0by期間的。又，x MHz RF產生器在次狀態S0ax期間所產生之經輸送的功率訊號1014之經輸送的功率位準係大於次狀態S0bx期間的。 Also, it should be noted that the transmitted power level of the transmitted power signal 1012 generated by the y MHz RF generator during the sub-state Say is greater than that during the sub-state S0by. In addition, the transmitted power level of the transmitted power signal 1014 generated by the x MHz RF generator during the sub-state Soax is greater than that during the sub-state S0bx.

在某些實施例中，y MHz RF產生器在次狀態S0by期間所產生之經輸送的功率訊號1012之經輸送的功率位準係小於x MHz RF產生器在次狀態S0bx期間所產生之經輸送的功率訊號1014之經輸送的功率位準。 In some embodiments, the delivered power level of the delivered power signal 1012 generated by the y MHz RF generator during the sub-state S0by is less than the delivered power level of the x MHz RF generator generated during the sub-state S0bx The delivered power level of the power signal 1014.

在數個實施例中，y MHz RF產生器在次狀態S1by期間所產生之經輸送的功率訊號1012之經輸送的功率位準係小於x MHz RF產生器在次狀態S1bx期間所產生之經輸送的功率訊號1014之經輸送的功率位準。 In several embodiments, the transmitted power level of the transmitted power signal 1012 generated by the y MHz RF generator during the sub-state S1by is less than the transmitted power level of the x MHz RF generator generated during the sub-state S1bx The delivered power level of the power signal 1014.

圖11A顯示系統1100的一實施例，系統1100係用以例示在x與y MHz RF產生器兩者中同時使用次脈動。工具UI系統306包含能產生TTL1訊號的時脈源並藉由對應的纜線將TTL1訊號提供予DSPx及DSPy。DSPx在接收到時脈訊號TTL1時產生TTL5訊號並將時脈訊號提供予DSPy。x MHz RF產生器的剩餘操作係類似於參考圖7A所述的內容。又，y MHz RF產生器的剩餘操作係類似於參考圖9A所述的內容。 FIG. 11A shows an embodiment of a system 1100, which is used to illustrate the simultaneous use of sub-pulsations in both x and y MHz RF generators. The tool UI system 306 includes a clock source capable of generating TTL1 signals and provides the TTL1 signals to DSPx and DSPy through corresponding cables. When DSPx receives the clock signal TTL1, it generates a TTL5 signal and provides the clock signal to DSPy. The remaining operating system of the x MHz RF generator is similar to that described with reference to FIG. 7A. Also, the remaining operation system of the y MHz RF generator is similar to the content described with reference to FIG. 9A.

圖11B顯示系統1110的一實施例，系統1110係用以例示當x MHz RF產生器作為主產生器時，在x與y MHz RF產生器兩者中同時使用次脈動。DSPx 產生TTL1與TTL5訊號，並藉由對應的纜線將訊號TTL1及TTL5兩者提供予DSPy。x MHz RF產生器的剩餘操作係類似於圖7B的對應敘述。又，y MHz RF產生器的剩餘操作係類似於圖9B的對應敘述。 FIG. 11B shows an embodiment of the system 1110. The system 1110 is used to illustrate that when the x MHz RF generator is used as the primary generator, the secondary pulsation is simultaneously used in both the x MHz RF generator and the y MHz RF generator. DSPx Generate TTL1 and TTL5 signals, and provide both TTL1 and TTL5 signals to DSPy through the corresponding cables. The remaining operation of the x MHz RF generator is similar to the corresponding description in Figure 7B. In addition, the remaining operation of the y MHz RF generator is similar to the corresponding description in FIG. 9B.

圖12顯示系統1200的一實施例，系統1200係用以例示在x MHz RF產生器或y MHz RF產生器中使用開關1202選擇四個次狀態S1a、S1b、S0a與S0b中的一者。開關1202的一實例包含一多工器。在某些實施例中開關1202係以DSP(如DSPx或DSPy)內的電腦程式或硬體實施之。開關1202係連接至DSP。例如，當開關1202係位於x MHz RF產生器內時，開關1202係連接至DSPx，當開關1202係位於y MHz RF產生器內時，開關1202係連接至DSPy。 FIG. 12 shows an embodiment of the system 1200. The system 1200 is used to illustrate the use of the switch 1202 in the x MHz RF generator or the y MHz RF generator to select one of the four sub-states S1a, S1b, S0a, and S0b. An example of the switch 1202 includes a multiplexer. In some embodiments, the switch 1202 is implemented by a computer program or hardware in a DSP (such as DSPx or DSPy). The switch 1202 is connected to the DSP. For example, when the switch 1202 is located in the x MHz RF generator, the switch 1202 is connected to DSPx, and when the switch 1202 is located in the y MHz RF generator, the switch 1202 is connected to DSPy.

當TTL訊號(如數位脈動訊號TTL3、數位脈動訊號TTL5等)的一狀態為S0a時，DSP產生位元"00"，當TTL訊號的一狀態為S0b時，DSP產生位元"01"，當TTL訊號的一狀態為S1a時，DSP產生位元"10"，當TTL訊號的一狀態為S1b時，DSP產生位元"11"。TTL訊號係由DSP所產生或由DSP所接收。例如，DSPx產生數位脈動訊號TTL3或TTL訊號TTL5，而DSPy接收數位脈動訊號TTL3或數位脈動訊號TTL5。 When a state of a TTL signal (such as digital pulsation signal TTL3, digital pulsation signal TTL5, etc.) is S0a, DSP generates bit "00", when a state of TTL signal is S0b, DSP generates bit "01", when When a state of the TTL signal is S1a, the DSP generates a bit "10", and when a state of the TTL signal is S1b, the DSP generates a bit "11". The TTL signal is generated by the DSP or received by the DSP. For example, DSPx generates digital pulsation signal TTL3 or TTL signal TTL5, and DSPy receives digital pulsation signal TTL3 or digital pulsation signal TTL5.

當RF產生器的開關1202接收位元"00"時，開關1202發送訊號至RF產生器的參數控制器PRS0a，如功率控制器、自動頻率調整器等。在自開關1202接收到指示位元"00"的訊號後，參數控制器PRS0a自位元"00"與參數位準之間的映射辨識一參數位準，如頻率位準、功率位準等。 When the switch 1202 of the RF generator receives the bit "00", the switch 1202 sends a signal to the parameter controller PRS0a of the RF generator, such as a power controller, an automatic frequency regulator, etc. After receiving the signal indicating the bit "00" from the switch 1202, the parameter controller PRS0a identifies a parameter level, such as the frequency level, the power level, etc., from the mapping between the bit "00" and the parameter level.

類似地，當RF產生器的開關1202接收位元"01"時，開關1202發送訊號至RF產生器的參數控制器PRS0b。在自開關1202接收到指示位元"01"的訊號後，參數控制器PRS0b自位元"01"與參數位準之間的映射辨識一參數位準。 Similarly, when the switch 1202 of the RF generator receives the bit "01", the switch 1202 sends a signal to the parameter controller PRS0b of the RF generator. After receiving the signal indicating the bit "01" from the switch 1202, the parameter controller PRS0b identifies a parameter level from the mapping between the bit "01" and the parameter level.

又，當RF產生器的開關1202接收位元"10"時，開關1202發送訊號至RF產生器的參數控制器PRS1a。在自開關1202接收到指示位元"10"的訊號後，參數控制器PRS1a自位元"10"與參數位準之間的映射辨識一參數位準。 Moreover, when the switch 1202 of the RF generator receives the bit "10", the switch 1202 sends a signal to the parameter controller PRS1a of the RF generator. After receiving the signal indicating the bit "10" from the switch 1202, the parameter controller PRS1a identifies a parameter level from the mapping between the bit "10" and the parameter level.

又，當RF產生器的開關1202接收位元"11"時，開關1202發送訊號至RF產生器的參數控制器PRS1b。在自開關1202接收到指示位元"11"的訊號後，參數控制器PRS1b自位元"11"與參數位準之間的映射辨識一參數位準。 In addition, when the switch 1202 of the RF generator receives the bit "11", the switch 1202 sends a signal to the parameter controller PRS1b of the RF generator. After receiving the signal indicating the bit "11" from the switch 1202, the parameter controller PRS1b identifies a parameter level from the mapping between the bit "11" and the parameter level.

圖13A顯示DSP 1300的一實施例，DSP 1300係用以例示TTL3數位脈動訊號的產生。DSP 1300包含內部時脈源1302及處理邏輯1104，如電腦程式、ASIC、PLD等。在某些實施例中，DSP 1300包含用以儲存處理器邏輯1104的記憶體裝置。 FIG. 13A shows an embodiment of the DSP 1300. The DSP 1300 is used to illustrate the generation of a TTL3 digital pulsation signal. The DSP 1300 includes an internal clock source 1302 and processing logic 1104, such as computer programs, ASICs, and PLDs. In some embodiments, the DSP 1300 includes a memory device for storing processor logic 1104.

TTL1訊號係由一外部時脈源(如工具UI系統306(圖3A)的時脈源、工具UI系統306外部的另一時脈源等)所產生。又，TTL2訊號係由內部時脈源1302所產生。例如，TTL2訊號的頻率係高於TTL1訊號的頻率。 The TTL1 signal is generated by an external clock source (such as the clock source of the tool UI system 306 (FIG. 3A), another clock source external to the tool UI system 306, etc.). In addition, the TTL2 signal is generated by the internal clock source 1302. For example, the frequency of the TTL2 signal is higher than the frequency of the TTL1 signal.

處理邏輯1104接收TTL1時脈訊號與TTL2訊號，將訊號TTL1與TTL2相乘以產生TTL3訊號，將所得的TTL3訊號供給予DSP 1300所在的RF產生器，如x MHz RF產生器、y MHz RF產生器等的參數控制器或另一RF產生器如y MHz RF產生器、x MHz RF產生器等的參數控制器。 The processing logic 1104 receives the TTL1 clock signal and the TTL2 signal, multiplies the TTL1 and TTL2 signals to generate a TTL3 signal, and supplies the resulting TTL3 signal to the RF generator where the DSP 1300 is located, such as x MHz RF generator, y MHz RF generator A parameter controller of a generator, etc. or a parameter controller of another RF generator such as a y MHz RF generator, an x MHz RF generator, etc.

在各種實施例中，DSP 1300包含能基於TTL1訊號之狀態而在TTL1訊號與TTL2訊號之間選擇的開關。例如，當TTL1訊號係處於狀態S0時，開關選擇TTL1訊號以提供DSP 1300所在之RF產生器的參數控制器或提供另一RF產生器的參數控制器。又，在此實例中，當TTL1訊號處於狀態S1，開關選擇TTL2訊號以提供DSP 1300所在之RF產生器的參數控制器或提供另一RF產生器 的參數控制器。在此實例中，在TTL1訊號的狀態S1期間選擇具有次狀態S1a與S1b的一部分TTL2訊號。 In various embodiments, the DSP 1300 includes a switch that can select between the TTL1 signal and the TTL2 signal based on the state of the TTL1 signal. For example, when the TTL1 signal is in the state S0, the switch selects the TTL1 signal to provide the parameter controller of the RF generator where the DSP 1300 is located or to provide the parameter controller of another RF generator. Also, in this example, when the TTL1 signal is in the state S1, the switch selects the TTL2 signal to provide the parameter controller of the RF generator where the DSP 1300 is located or to provide another RF generator The parameter controller. In this example, during the state S1 of the TTL1 signal, a part of the TTL2 signal having the sub-states S1a and S1b is selected.

圖13B為用以產生TTL5訊號之DSP 1320的一實施例。DSP 1320包含內部時脈源1302、反相器1322、另一內部時脈源1324、處理邏輯1326及加法器1328。 FIG. 13B shows an embodiment of the DSP 1320 used to generate TTL5 signals. The DSP 1320 includes an internal clock source 1302, an inverter 1322, another internal clock source 1324, processing logic 1326, and an adder 1328.

在某些實施例中，加法器1328、處理邏輯1326及反相器1322係以例如使用邏輯閘等的硬體所實施。在各種實施例中，加法器1328、處理邏輯1326及反相器1322係作為一電腦程式(例如處理邏輯等)來實施而可被DSP 1320所執行。 In some embodiments, the adder 1328, the processing logic 1326, and the inverter 1322 are implemented by hardware such as logic gates. In various embodiments, the adder 1328, the processing logic 1326, and the inverter 1322 are implemented as a computer program (such as processing logic, etc.) and can be executed by the DSP 1320.

內部時脈源1302產生TTL4-2訊號，如TTL2訊號等的時脈訊號。處理邏輯1326處理TTL4-2訊號及時脈訊號TTL1以產生TTL3訊號。例如，處理邏輯1326使TTL4-2訊號與時脈訊號TTL1相乘以產生TTL3數位脈動訊號。數位脈動訊號TTL3被提供予加法器1328。 The internal clock source 1302 generates TTL4-2 signals, such as TTL2 signals and other clock signals. The processing logic 1326 processes the TTL4-2 signal and the clock signal TTL1 to generate a TTL3 signal. For example, the processing logic 1326 multiplies the TTL4-2 signal and the clock signal TTL1 to generate a TTL3 digital pulse signal. The digital pulsation signal TTL3 is provided to the adder 1328.

又，反相器1322接收TTL1訊號並將TTL1訊號的邏輯位準反相。例如，TTL1訊號的邏輯位準1被反相為邏輯位準0、且TTL1訊號的邏輯位準0被反相為邏輯位準1。處理邏輯1326接收反相器1322所產生之已經反相的TTL1訊號。又，內部時脈源1324產生時脈訊號TTL4-1並將其提供予處理邏輯1326。處理邏輯1326處理時脈訊號TTL4-1與TTL1時脈訊號以產生TTL訊號，加法器1328將TTL訊號加至TTL3訊號以產生TTL5訊號。 In addition, the inverter 1322 receives the TTL1 signal and inverts the logic level of the TTL1 signal. For example, the logic level 1 of the TTL1 signal is inverted to a logic level 0, and the logic level 0 of the TTL1 signal is inverted to a logic level 1. The processing logic 1326 receives the inverted TTL1 signal generated by the inverter 1322. In addition, the internal clock source 1324 generates a clock signal TTL4-1 and provides it to the processing logic 1326. The processing logic 1326 processes the clock signals TTL4-1 and TTL1 clock signals to generate a TTL signal, and the adder 1328 adds the TTL signal to the TTL3 signal to generate a TTL5 signal.

應注意，在某些實施例中，每一TTL4-1訊號與TTL4-2訊號的頻率係大於TTL1訊號的頻率。在各種實施例中，TTL4-1訊號的頻率係等於TTL4-2訊號的頻率。 It should be noted that in some embodiments, the frequency of each TTL4-1 signal and TTL4-2 signal is greater than the frequency of the TTL1 signal. In various embodiments, the frequency of the TTL4-1 signal is equal to the frequency of the TTL4-2 signal.

在某些實施例中，DSP 1320包含時脈源，此時脈源的頻率係與脈動訊號602(圖6A)或脈動訊號802(圖8A)的頻率相同。 In some embodiments, the DSP 1320 includes a clock source. At this time, the frequency of the pulse source is the same as the frequency of the pulsation signal 602 (FIG. 6A) or the pulsation signal 802 (FIG. 8A).

圖14顯示DSP 1400的一實施例，DSP 1400使用調變訊號1203來決定是否產生多個次狀態Sna與Snb或產生狀態Sm。DSPx與DSPy中的每一者皆為DSP 1400的實例。DSP 1400接收具有狀態Sm與Sn的時脈訊號Clk，如TTL1訊號等。在某些實施例中，狀態Sm為高邏輯位準狀態而狀態Sn為低邏輯位準狀態。高邏輯位準係高於低邏輯位準。 FIG. 14 shows an embodiment of the DSP 1400. The DSP 1400 uses the modulation signal 1203 to determine whether to generate multiple sub-states Sna and Snb or to generate the state Sm. Each of DSPx and DSPy is an instance of DSP 1400. The DSP 1400 receives a clock signal Clk with states Sm and Sn, such as a TTL1 signal. In some embodiments, the state Sm is a high logic level state and the state Sn is a low logic level state. The high logic level is higher than the low logic level.

DSP 1400亦接收具有三個邏輯位準(即高邏輯位準、中邏輯位準與低邏輯位準)的調變訊號1203。中邏輯位準係高於低邏輯位準、且高邏輯位準係高於中邏輯位準。又，中邏輯位準係藉由低位準轉換而達到，低位準轉換至中位準的時間係長於自中邏輯位準轉換至高邏輯位準的時間。 The DSP 1400 also receives a modulation signal 1203 with three logic levels (ie, a high logic level, a middle logic level, and a low logic level). The middle logic level is higher than the low logic level, and the high logic level is higher than the middle logic level. In addition, the middle logic level is achieved by the low-level transition, and the time for transitioning from the low level to the middle level is longer than the time for transitioning from the middle logic level to the high logic level.

DSP 1400判斷出調變訊號1203對於時脈訊號Clk之自狀態Sn轉換至狀態Sm的轉換慢於時脈訊號Clk之自狀態Sm轉換至狀態Sn。又，DSP 1400判斷出調變訊號1203在時脈訊號Clk的狀態Sm期間已達到中邏輯位準。DSP 1400產生時脈1訊號Clk1，如TTL3訊號等，當判斷出時脈訊號Clk之自狀態Sn轉換至狀態Sm的轉換係慢於時脈訊號Clk之自狀態Sm轉換至狀態Sn的轉換、且判斷出調變訊號1203在時脈訊號Clk的狀態Sm期間已達到中邏輯位準之時，訊號Clk1具有狀態Sm。 The DSP 1400 determines that the transition of the modulation signal 1203 from the state Sn to the state Sm of the clock signal Clk is slower than the transition of the clock signal Clk from the state Sm to the state Sn. Furthermore, the DSP 1400 determines that the modulation signal 1203 has reached the middle logic level during the state Sm of the clock signal Clk. DSP 1400 generates clock 1 signal Clk1, such as TTL3 signal, etc., when it is determined that the transition from state Sn to state Sm of clock signal Clk is slower than the transition from state Sm to state Sn of clock signal Clk, and When it is determined that the modulation signal 1203 has reached the middle logic level during the state Sm of the clock signal Clk, the signal Clk1 has the state Sm.

又，DSP 1400判斷出調變訊號1203具有時脈訊號Clk之自狀態Sm轉換至狀態Sn的轉換係快於時脈訊號Clk之自狀態Sn轉換至狀態Sm的轉換。又，DSP 1400判斷出調變訊號1203在時脈訊號Clk的狀態Sn期間已達到高邏輯位準。當判斷出時脈訊號Clk之自狀態Sm轉換至狀態Sn的轉換係快於時脈訊號Clk之自 狀態Sn轉換至狀態Sm的轉換且判斷出調變訊號1203在時脈訊號Clk的狀態Sn期間已達到高邏輯位準之時，DSP 1400產生具有複數次狀態Sna與Snb的Clk1訊號。 Furthermore, the DSP 1400 determines that the transition from the state Sm to the state Sn of the modulation signal 1203 with the clock signal Clk is faster than the transition from the state Sn to the state Sm of the clock signal Clk. Furthermore, the DSP 1400 determines that the modulation signal 1203 has reached the high logic level during the state Sn of the clock signal Clk. When it is determined that the transition from the state Sm to the state Sn of the clock signal Clk is faster than the self-transition of the clock signal Clk When the state Sn transitions to the state Sm and it is determined that the modulation signal 1203 has reached the high logic level during the state Sn of the clock signal Clk, the DSP 1400 generates the Clk1 signal with multiple states Sna and Snb.

更應注意，圖14的說明中使用單一時脈源如產生時脈訊號Clk的時脈源。 It should be noted that in the description of FIG. 14, a single clock source, such as a clock source that generates the clock signal Clk, is used.

在各種實施例中，文中所用的「位準」一詞包含一範圍。例如，一功率位準包含一個範圍的功率量如介於1950瓦與2050瓦之間的範圍、介於1900瓦與2100瓦之間的範圍、介於950瓦與1050瓦之間的範圍、介於900瓦與1300瓦之間的範圍等。而另一位準即頻率位準包含一個範圍的頻率如介於1.9MHz與2.1MHz之間的範圍、介於1.7MHz與2.3MHz之間的範圍、介於58MHz與62MHz之間的範圍、介於55MHz與65MHz之間的範圍、介於25MHz與29MHz之間的範圍、介於23MHz與31MHz之間的範圍。 In various embodiments, the term "level" used in the text encompasses a range. For example, a power level includes a range of power amounts such as the range between 1950 watts and 2050 watts, the range between 1900 watts and 2100 watts, the range between 950 watts and 1050 watts, and the In the range between 900 watts and 1300 watts, etc. The other level, the frequency level, includes a range of frequencies such as the range between 1.9MHz and 2.1MHz, the range between 1.7MHz and 2.3MHz, the range between 58MHz and 62MHz, and the The range between 55MHz and 65MHz, the range between 25MHz and 29MHz, the range between 23MHz and 31MHz.

又，在各種實施例中，自控制器之記憶體裝置或自調整器之記憶體裝置辨識的一位準係關於如映射、連結等至一製程率如蝕刻率、或沉積率、或濺射率等或處理晶圓318。 In addition, in various embodiments, the level of the memory device identification from the memory device of the controller or the memory device of the self-adjuster is related to a process rate such as an etching rate, a deposition rate, or a sputtering rate, such as mapping, linking, etc. Rate etc. or handle wafer 318.

更應注意，雖然上述操作係參考平行板電漿室如電容耦合式電漿室等說明，但在某些實施例中，上述操作可應用至其他類型的電漿室如包含感應耦合電漿(ICP)反應器的電漿室、包含變壓器耦合電漿(TCP)反應器的電漿室、包含介電工具的電漿室、包含電子迴旋共振(ECR)反應器之電漿室等。例如，x MHz RF產生器與y MHz RF產生器係耦合至ICP電漿室內的電感器。 It should be noted that although the above operations are described with reference to parallel plate plasma chambers such as capacitively coupled plasma chambers, in some embodiments, the above operations can be applied to other types of plasma chambers such as inductively coupled plasma chambers ( Plasma chamber of ICP) reactor, plasma chamber including transformer coupled plasma (TCP) reactor, plasma chamber including dielectric tools, plasma chamber including electron cyclotron resonance (ECR) reactor, etc. For example, the x MHz RF generator and the y MHz RF generator are coupled to the inductor in the ICP plasma chamber.

亦應注意，雖然上述操作係由DSP執行，但在某些實施例中此些操作可由工具UI系統306(圖3A)的一或多個處理器、或複數工具UI系統的複數處理器、或工具UI系統306之RF產生器的DSP與處理器的組合所執行。 It should also be noted that although the above operations are performed by the DSP, in some embodiments these operations can be performed by one or more processors of the tool UI system 306 (FIG. 3A), or plural processors of the tool UI system, or The tool UI system 306 is executed by the combination of the DSP and the processor of the RF generator.

應注意，雖然上述實施例係關於提供一或多個RF訊號予電漿室304之夾頭314的下電極和接地電漿室304的上電極316，但在數個實施例中，該一或多個RF訊號係提供予上電極316但下電極係接地。 It should be noted that although the above embodiment is about providing one or more RF signals to the lower electrode of the chuck 314 of the plasma chamber 304 and the upper electrode 316 of the grounded plasma chamber 304, in several embodiments, the one or Multiple RF signals are provided to the upper electrode 316 but the lower electrode is grounded.

文中所述之實施例可利用各種電腦系統組態實施，包含手持硬體單元、微處理器系統、微處理器系或可程式化之消費電子產品、迷你電腦、主機電腦等。此些實施例亦可在分散的計算環境中實施，在此方式下任務係藉著經由網路連結的遠端處理硬體單元進行。 The embodiments described in the text can be implemented using various computer system configurations, including handheld hardware units, microprocessor systems, microprocessor-based or programmable consumer electronic products, mini computers, host computers, etc. These embodiments can also be implemented in a distributed computing environment, in which tasks are performed by remote processing hardware units connected via a network.

在某些實施例中，控制器為系統的一部分，其為上述實例的一部分。此類系統包含半導體處理設備，半導體處理設備包含處理工具或複數工具、製程室或複數製程室、處理平臺或複數平臺、及/或特定的處理元件(晶圓座臺、氣體流動系統等)。此些系統係與一些電子裝置整合，此些電子裝置係用以在半導體晶圓或基板處理之前、期間及之後控制系統的操作。此些電子裝置係稱為「控制器」，其可控制系統或複數系統的各種元件或子部件。取決於處理需求及/或系統類型，控制器被程式化以控制文中所揭露的任何處理包含輸送製程氣體、溫度設定(如加熱及/或冷卻)、壓力設定、真空設定、流率設定、流體輸送設定、位置與操作設定、晶圓傳輸進入或離開設備與連接至系統或與系統具有界面的其他傳輸設備及/或裝載互鎖機構。 In some embodiments, the controller is part of the system, which is part of the above examples. Such systems include semiconductor processing equipment, which includes processing tools or multiple tools, process chambers or multiple process chambers, processing platforms or multiple platforms, and/or specific processing components (wafer seats, gas flow systems, etc.). These systems are integrated with electronic devices that are used to control the operation of the system before, during, and after semiconductor wafer or substrate processing. These electronic devices are called "controllers", which can control various elements or sub-components of the system or multiple systems. Depending on the processing requirements and/or system type, the controller is programmed to control any processing disclosed in the article including delivery of process gas, temperature settings (such as heating and/or cooling), pressure settings, vacuum settings, flow rate settings, fluids Conveying settings, position and operation settings, wafer transport entering or leaving equipment and other transport equipment connected to or interfaced with the system and/or loading interlocking mechanism.

概括地說，在各種實施例中，控制器被定義為具有各種積體電路、邏輯、記憶體及/或軟體的電子裝置，其可接收指令、發佈指令、控制操作、致能清理操作、致能終點量測等。積體電路包含儲存了程式指令之具有韌體形式的晶片、數位訊號處理器(DSP)、被定為ASIC、PLD的晶片及/或能執行程式指令(如軟體)的一或多個微處理器或微控制器。程式指令為與控制器通訊之具有各種獨 立設定(或程式檔案)形式的指令，其定義為了在半導體晶圓上或針對半導體晶圓進行特定處理或對系統進行特定處理所用的操作參數。在某些實施例中，操作參數為製程工程師為了完成一或多膜層、材料、金屬、氧化物、矽、二氧化矽、表面、電路及/或晶圓之晶粒之製造期間的一或多個製程步驟所定義之配方的一部分。 In summary, in various embodiments, a controller is defined as an electronic device with various integrated circuits, logic, memory, and/or software, which can receive instructions, issue instructions, control operations, enable cleanup operations, and cause Can end-point measurement, etc. The integrated circuit includes a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip designated as an ASIC, PLD, and/or one or more microprocessors capable of executing program instructions (such as software) Device or microcontroller. The program command is the communication with the controller with various unique A command in the form of a set-up (or program file), which defines the operating parameters used to perform a specific process on a semiconductor wafer or for a semiconductor wafer or to perform a specific process on a system. In some embodiments, the operating parameters are one or more during the manufacturing process of one or more films, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or wafers by the process engineer. Part of a recipe defined by multiple process steps.

在某些實施例中控制器為整合至、耦合至、藉由網路連接至、或其組合至系統的電腦的一部分。例如，控制器係位於雲端或工廠主機電腦系統的全部或部分係位於雲端，這允許使用者遠端接取晶圓處理。電腦致能遠端接取系統以監控製造操作的目前進展、檢視過去製造操作的歷程、自複數製造操作檢視效能驅勢、改變現有處理的參數、設定處理步驟以符合現有處理、或開始一新的製程。 In some embodiments, the controller is a part of a computer integrated into, coupled to, connected to via a network, or a combination thereof to the system. For example, the controller is located in the cloud or all or part of the factory host computer system is located in the cloud, which allows users to remotely access wafer processing. The computer enables remote access to the system to monitor the current progress of manufacturing operations, view the history of past manufacturing operations, view performance drivers from multiple manufacturing operations, change existing processing parameters, set processing steps to match existing processing, or start a new one The manufacturing process.

在某些實施例中，遠端電腦(或伺服器)經由網路對系統提供製程配方，網路包含區域網路或網際網路。遠端電腦包含使用者介面，使用者介面讓使用者能進入或程式化參數及/或設定，然後自遠端電腦與系統通訊。在某些實例中，控制器接收數據形式的指令，指令指出在一或多個操作期間欲施行之每一製程步驟的參數。應瞭解，參數係特別針對欲施行之製程的類型及控制器用以交界或控制之設備的類型。因此如上所述，可分散控制器如藉著包含一或多個藉由網路互連並朝向共同目的如文中所述之製程及控制工作的離散控制器。為了此類目的的分散控制器包含製程室上的一或多個積體電路，其係與一或多個位於遠端(例如位於平臺位準或遠端電腦的一部分)的積體電路通訊而共同控制製程室上的製程。 In some embodiments, the remote computer (or server) provides process recipes to the system via a network, and the network includes a local area network or the Internet. The remote computer includes a user interface, which allows the user to enter or program parameters and/or settings, and then communicate with the system from the remote computer. In some instances, the controller receives instructions in the form of data indicating the parameters of each process step to be performed during one or more operations. It should be understood that the parameters are specifically for the type of process to be performed and the type of equipment that the controller uses to interface or control. Therefore, as described above, a decentralized controller may include one or more discrete controllers interconnected by a network and directed toward a common purpose in the process and control tasks described in the text. Distributed controllers for such purposes include one or more integrated circuits on the process room, which communicate with one or more integrated circuits located remotely (for example, at the platform level or part of a remote computer). Jointly control the process in the process room.

不受限地，在各種實施例中，例示性的系統包含電漿蝕刻室或模組、沉積室或模組、旋轉沖洗室或模組、金屬鍍室或模組、清理室或模組、邊緣蝕刻室或模組、物理氣相沉積(PVD)室或模組、化學氣相沉積(CVD)室或模組、原子層沉積(ALD)室或模組、原子層蝕刻(ALE)室或模組、離子植入室或模組、軌道室或模組、及和半導體晶圓之製造相關或用於製造的任何其他半導體製程系統。 Without limitation, in various embodiments, an exemplary system includes a plasma etching chamber or module, a deposition chamber or module, a rotating washing chamber or module, a metal plating chamber or module, a cleaning chamber or module, Edge etching chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer etching (ALE) chamber or Modules, ion implantation chambers or modules, orbital chambers or modules, and any other semiconductor process systems related to or used in the manufacture of semiconductor wafers.

如上所述，取決於設備所進行的製程步驟或複數步驟，控制器可與下列的一或多者通訊交流：其他設備的電路或模組、其他設備的元件、叢集設備、其他設備的界面、相鄰設備、鄰近設備、位於工廠內的設備、主電腦、另一控制器、或半導體製造工廠中用以將晶圓容器載入與載出設備位置及/或裝載接口的材料運輸用設備。 As mentioned above, depending on the process steps or multiple steps performed by the equipment, the controller can communicate with one or more of the following: circuits or modules of other equipment, components of other equipment, cluster equipment, interfaces of other equipment, Adjacent equipment, adjacent equipment, equipment located in a factory, a host computer, another controller, or a material transportation equipment used to load wafer containers into and out of the equipment location and/or load interface in a semiconductor manufacturing plant.

考慮到上述實施例，應瞭解，實施例可進行涉及儲存在電腦系統中之數據的各種電腦施行操作。此些操作需要實質操控物理數量。形成實施例之一部分之所述之任何操作皆為有用的機械操作。 Considering the above embodiments, it should be understood that the embodiments can perform various computer-implemented operations involving data stored in a computer system. These operations require substantial manipulation of physical quantities. Any operations described that form part of the embodiment are useful mechanical operations.

某些實施例亦關於執行此些操作的硬體單元或設備。可針對專門用途的電腦專門建構設備。當一電腦被定義為專門用途之電腦時，此電腦除了能夠針對專門用途運行之外，亦可進行其他處理、程式執行或其他非屬特別用途的子程式。 Some embodiments also relate to hardware units or devices that perform such operations. The equipment can be specially constructed for special purpose computers. When a computer is defined as a computer for special purposes, in addition to being able to operate for special purposes, this computer can also perform other processing, program execution, or other subprograms that are not for special purposes.

在某些實施例中，操作可由儲存在電腦記憶體、快取記憶體或自網路所獲得的一或多個電腦程式所選擇性活化或配置的電腦所執行。當數據係自電腦網路獲得時，該數據可由電腦網路上的其他電腦如電端計算資源所處理。 In some embodiments, operations can be executed by a computer selectively activated or configured by one or more computer programs stored in computer memory, cache memory, or obtained from the Internet. When the data is obtained from a computer network, the data can be processed by other computers on the computer network, such as electrical terminal computing resources.

可將一或多個實施例製作成非瞬變電腦可讀媒體上的電腦可讀碼。非瞬變電腦可讀媒體是可儲存數據且後續可被電腦系統讀取的任何數據儲存硬體單元如記憶體裝置等。非瞬變電腦可讀媒體的實例包含硬碟、網路附加儲存(NAS)、ROM、RAM、光碟-ROM(CD-ROM)、可錄CD(CD-R)、可重覆寫入之CD(CD-RW)、磁帶及其他光學式與非光學式數據儲存硬體單元。在某些實施例中，非瞬變電腦可讀媒體可包含分散於網路耦合電腦系統的電腦可讀實質媒體，因此電腦可讀碼係以分散方式儲存及執行。 One or more embodiments can be made into computer readable code on a non-transitory computer readable medium. A non-transitory computer-readable medium is any data storage hardware unit, such as a memory device, that can store data and can be read by a computer system later. Examples of non-transitory computer-readable media include hard disks, network attached storage (NAS), ROM, RAM, compact disc-ROM (CD-ROM), recordable CD (CD-R), rewritable CD (CD-RW), magnetic tape and other optical and non-optical data storage hardware units. In some embodiments, the non-transitory computer-readable medium may include a computer-readable physical medium dispersed in a network-coupled computer system, so the computer-readable code is stored and executed in a distributed manner.

雖然以特定的順序說明前述方法操作，但應瞭解，在各種實施例中可在操作之間可進行其他閒雜操作或者可調整方法操作使其發生的時間略有不同，或者可將方法操作分配至允許方法操作以各種間隔進行或允許方法操作以不同於前述順序之順序進行的系統中。 Although the foregoing method operations are described in a specific order, it should be understood that, in various embodiments, other miscellaneous operations may be performed between operations or the method operations may be adjusted to make the time at which they occur slightly different, or the method operations may be assigned to In a system that allows method operations to be performed at various intervals or allows method operations to be performed in a different order than the foregoing sequence.

更應注意在一實施例中，在不脫離本文所述之各種實施例的範圍的情況下，來自任何實施例的一或多個特徵可與任何其他實施例的一或多個特徵結合。 It should be further noted that in an embodiment, one or more features from any embodiment may be combined with one or more features of any other embodiment without departing from the scope of the various embodiments described herein.

雖然為了能清楚瞭解本發明的目的，已詳細說明了前面的實施例，但應明白，在隨附之申請專利範圍的範疇內可進行某些變化與修改。因此，此些實施例應被視為是說明性而非限制性的，且實施例並不限於文中所述的細節，在隨附申請範圍的範疇與等效物內可修改此些實施例。 Although the foregoing embodiments have been described in detail for the purpose of clearly understanding the present invention, it should be understood that certain changes and modifications can be made within the scope of the attached patent application. Therefore, these embodiments should be regarded as illustrative rather than restrictive, and the embodiments are not limited to the details described in the text, and these embodiments can be modified within the scope and equivalents of the scope of the attached application.

100:RF產生器 100: RF generator

Sm:狀態 Sm: State

Sna:狀態 Sna: Status

Snb:狀態 Snb: Status

Claims (56)

一種射頻(RF)產生器，包含：一處理器，用於：自一時脈源接收一時脈訊號，該時脈訊號具有兩狀態；自該時脈訊號產生一脈動訊號，該脈動訊號在該等狀態其中一者內具有複數次狀態，該複數次狀態具有大於該等狀態之頻率的頻率；及提供該脈動訊號以控制藉由一RF訊號的功率，該功率係受到控制以與該脈動訊號同步；以及一RF電源，耦合至該處理器，其中該RF電源用於產生具有功率的該RF訊號，其中該RF電源用以將該RF訊號經由一阻抗匹配電路供給至一電漿室。 A radio frequency (RF) generator, including: a processor, used to: receive a clock signal from a clock source, the clock signal has two states; from the clock signal to generate a pulse signal, the pulse signal in the One of the states has a plurality of states in which the plurality of states has a frequency greater than the frequency of the states; and the pulsation signal is provided to control the power by an RF signal, and the power is controlled to be synchronized with the pulsation signal And an RF power supply coupled to the processor, wherein the RF power supply is used to generate the RF signal with power, wherein the RF power supply is used to supply the RF signal to a plasma chamber via an impedance matching circuit. 如申請專利範圍第1項之射頻(RF)產生器，更包含：一功率控制器，耦合至該處理器，其中該功率控制器係用以基於該複數狀態與複數功率位準之間的映射並基於該複數次狀態與該複數功率位準之間的映射來辨識一功率位準；及一頻率調整器，耦合至該處理器，其中該頻率調整器係用以基於該複數狀態與複數頻率位準之間的映射及該複數次狀態與該複數頻率位準之間的映射來辨識一頻率位準。 For example, the radio frequency (RF) generator of claim 1 further includes: a power controller coupled to the processor, wherein the power controller is used for mapping between the complex state and the complex power level And identify a power level based on the mapping between the complex state and the complex power level; and a frequency adjuster, coupled to the processor, wherein the frequency adjuster is used to based on the complex state and the complex frequency The mapping between the levels and the mapping between the complex state and the complex frequency level are used to identify a frequency level. 如申請專利範圍第1項之射頻(RF)產生器，其中該電漿室包含一上電極與一夾頭，該夾頭面對該上電極，該RF訊號之該功率具有該複數功率位準，每一該功率位準係映射至一蝕刻率或一沉積率。 For example, the radio frequency (RF) generator of the first patent application, wherein the plasma chamber includes an upper electrode and a chuck, the chuck faces the upper electrode, and the power of the RF signal has the complex power level , Each of the power levels is mapped to an etching rate or a deposition rate. 如申請專利範圍第1項之射頻(RF)產生器，其中受到控制以與該脈動訊號同步的該功率具有與該脈動訊號之頻率相同的頻率。 For example, the radio frequency (RF) generator of the first item in the scope of the patent application, wherein the power controlled to be synchronized with the pulsation signal has the same frequency as the frequency of the pulsation signal. 如申請專利範圍第1項之射頻(RF)產生器，其中該兩狀態包含一高狀態及一低狀態，該高狀態具有比該低狀態更高的邏輯位準。 For example, the radio frequency (RF) generator of the first item in the scope of patent application, wherein the two states include a high state and a low state, and the high state has a higher logic level than the low state. 如申請專利範圍第1項之射頻(RF)產生器，其中該脈動訊號自該兩狀態的一狀態轉換至該兩次狀態的一第一次狀態，接著自該第一次狀態轉換至該兩次狀態的一第二次狀態，然後自該第二次狀態轉換至該第一次狀態，接著自該第一次狀態轉換至該第二次狀態，然後自該第二次狀態轉換至該兩狀態的該一狀態。 For example, the radio frequency (RF) generator of the first item in the scope of the patent application, wherein the pulsation signal transitions from a state of the two states to a first state of the two states, and then transitions from the first state to the two states A second state of the secondary state, and then transition from the second state to the first state, then transition from the first state to the second state, and then transition from the second state to the two states The state of the state. 如申請專利範圍第1項之射頻(RF)產生器，其中該複數次狀態包含一第一次狀態、一第二次狀態、一第三次狀態與一第四次狀態，其中該RF訊號的該功率具有複數功率位準，其中該複數功率位準的一第一功率位準自該第一次狀態轉換至該第二次狀態中該複數功率位準的一第二功率位準，其中該第二功率位準接著轉換至該第一次狀態中的該第一功率位準，其中該第一功率位準接著轉換至該第二次狀態中的該第二功率位準，其中該第二功率位準接著轉換至該第三次狀態中的該複數功率位準的一第三功率位準，其中該第三功率位準接著轉換至該複數功率位準之一第四功率位準以達成該第四次狀態，其中該第四功率位準接著轉換至該第三功率位準以達到該第三次狀態，其中該第三功率位準接著轉換至該第四功率位準。 For example, the radio frequency (RF) generator in the first item of the patent application, wherein the multiple states include a first state, a second state, a third state, and a fourth state, where the RF signal The power has a complex power level, wherein a first power level of the complex power level transitions from the first state to a second power level of the complex power level in the second state, wherein the The second power level is then converted to the first power level in the first state, wherein the first power level is then converted to the second power level in the second state, wherein the second power level The power level is then converted to a third power level of the complex power level in the third state, where the third power level is then converted to a fourth power level of the complex power level to achieve The fourth state, wherein the fourth power level is then converted to the third power level to achieve the third state, wherein the third power level is then converted to the fourth power level. 一種電漿系統，包含： 一處理器，用於：自一時脈源接收一時脈訊號，該時脈訊號具有兩狀態；自該時脈訊號產生一脈動訊號，該脈動訊號在該等狀態之一狀態內具有複數次狀態，該複數次狀態具有大於該等狀態之頻率的頻率；及提供該脈動訊號以控制一射頻(RF)訊號的功率，該功率係受到控制以與該脈動訊號同步；一RF電源，用以產生具有該功率的該RF訊號；一RF纜線，耦合至該RF電源；一阻抗匹配電路，耦合至該RF電源，其中該阻抗匹配電路用以經由該RF纜線接收該RF訊號，其中該阻抗匹配電路係用以匹配耦合至該阻抗匹配電路之一負載的阻抗與耦合至該阻抗匹配電路之一源的阻抗，以自該RF訊號產生一經修改的RF訊號；及一電漿室，耦合至該阻抗匹配電路，其中該電漿室用以接收該經修改的RF訊號而改變一電漿的阻抗。 A plasma system including: A processor for: receiving a clock signal from a clock source, the clock signal has two states; generating a pulsation signal from the clock signal, the pulsation signal has multiple states in one of the states, The multiple states have a frequency greater than the frequencies of the states; and the pulsation signal is provided to control the power of a radio frequency (RF) signal, and the power is controlled to be synchronized with the pulsation signal; an RF power source is used to generate The RF signal of the power; an RF cable coupled to the RF power source; an impedance matching circuit coupled to the RF power source, wherein the impedance matching circuit is used to receive the RF signal through the RF cable, wherein the impedance matching The circuit is used to match the impedance of a load coupled to the impedance matching circuit and the impedance of a source coupled to the impedance matching circuit to generate a modified RF signal from the RF signal; and a plasma chamber coupled to the impedance matching circuit Impedance matching circuit, wherein the plasma chamber is used to receive the modified RF signal to change the impedance of a plasma. 如申請專利範圍第8項之電漿系統，更包含將該電漿室耦合至該阻抗匹配電路的一RF傳輸線，其中該負載包含該電漿室與該RF傳輸線，其中該源包含該RF纜線與該RF產生器。 For example, the plasma system of claim 8 further includes an RF transmission line coupling the plasma chamber to the impedance matching circuit, wherein the load includes the plasma chamber and the RF transmission line, and the source includes the RF cable Line with the RF generator. 如申請專利範圍第8項之電漿系統，其中該脈動訊號自該兩狀態的一狀態轉換至該兩次狀態的一第一次狀態，接著自該第一次狀態轉換至該兩次狀態的一第二次狀態，然後自該第二次狀態轉換至該第一次狀態，接著自該第一次狀態轉換至該第二次狀態，然後自該第二次狀態轉換至該兩狀態的該一狀態。 For example, the plasma system of item 8 of the scope of patent application, wherein the pulsation signal is converted from a state of the two states to a first state of the two states, and then from the first state to the two states A second state, then from the second state to the first state, then from the first state to the second state, and then from the second state to the two states One state. 如申請專利範圍第8項之電漿系統，其中該時脈源包含一石英振盪器或與一鎖相迴路耦合的一石英振盪器。 For example, the plasma system of item 8 of the scope of patent application, wherein the clock source includes a quartz oscillator or a quartz oscillator coupled with a phase-locked loop. 如申請專利範圍第8項之電漿系統，其中受到控制以與該脈動訊號同步的該功率具有與該脈動訊號之頻率相同的頻率。 For example, the plasma system of item 8 of the scope of patent application, wherein the power controlled to be synchronized with the pulsation signal has the same frequency as the frequency of the pulsation signal. 如申請專利範圍第8項之電漿系統，其中該兩狀態包含一高狀態及一低狀態，該高狀態具有比該低狀態更高的邏輯位準。 For example, the plasma system of item 8 of the scope of patent application, wherein the two states include a high state and a low state, and the high state has a higher logic level than the low state. 如申請專利範圍第8項之電漿系統，其中該複數次狀態包含一第一次狀態、一第二次狀態、一第三次狀態與一第四次狀態，其中該RF訊號的該功率具有複數功率位準，其中該複數功率位準的一第一功率位準自該第一次狀態轉換至該第二次狀態中該複數功率位準的一第二功率位準，其中該第二功率位準接著轉換至該第一次狀態中的該第一功率位準，其中該第一功率位準接著轉換至該第二次狀態中的該第二功率位準，其中該第二功率位準接著轉換至該第三次狀態中的該複數功率位準的一第三功率位準，其中該第三功率位準接著轉換至該複數功率位準之一第四功率位準以達成該第四次狀態，其中該第四功率位準接著轉換至該第三功率位準以達到該第三次狀態，其中該第三功率位準接著轉換至該第四功率位準。 For example, the plasma system of item 8 of the scope of patent application, wherein the multiple states include a first state, a second state, a third state, and a fourth state, wherein the power of the RF signal has A complex power level, wherein a first power level of the complex power level transitions from the first state to a second power level of the complex power level in the second state, wherein the second power The level is then converted to the first power level in the first state, where the first power level is then converted to the second power level in the second state, where the second power level Then transition to a third power level of the complex power level in the third state, where the third power level is then transitioned to a fourth power level of the complex power level to achieve the fourth power level The second state, wherein the fourth power level is then converted to the third power level to achieve the third state, wherein the third power level is then converted to the fourth power level. 一種射頻(RF)產生器，包含： 一處理器，用以產生具有複數狀態其中一者內之複數次狀態的脈動訊號，該等次狀態以大於該等狀態之頻率的頻率相對於彼此交替；及一RF電源，耦合至該處理器，該RF電源用以產生與該脈動訊號同步的一RF訊號，其中該RF訊號在一時脈週期的一時間期間具有該等狀態其中一者，且在該時脈週期的剩餘時間期間具有該等次狀態，其中該RF電源係用以經由一阻抗匹配電路將該RF訊號供給至一電漿室的一電極。 A radio frequency (RF) generator, including: A processor for generating a pulsation signal having a plurality of states in one of the plurality of states, the states alternating with respect to each other at a frequency greater than the frequency of the states; and an RF power supply coupled to the processor , The RF power supply is used to generate an RF signal synchronized with the pulsation signal, wherein the RF signal has one of the states during a period of a clock cycle, and has the states during the remaining time of the clock cycle In the second state, the RF power supply is used to supply the RF signal to an electrode of a plasma chamber through an impedance matching circuit. 如申請專利範圍第15項之射頻(RF)產生器，其中該脈動訊號自該兩狀態之一者轉換至該複數次狀態之一第一次狀態，接著自該第一次狀態轉換至該複數次狀態之一第二次狀態，然後在該第一次狀態與該第二次狀態之間週期性地轉換，且然後自該第二次狀態轉換至該兩狀態之該一者。 For example, the 15th radio frequency (RF) generator in the scope of the patent application, wherein the pulsation signal transitions from one of the two states to the first state of the plurality of states, and then transitions from the first state to the plurality of states A second state of one of the secondary states, and then periodically transition between the first state and the second state, and then transition from the second state to the one of the two states. 如申請專利範圍第15項之射頻(RF)產生器，其中該處理器係用以將該脈動訊號供給至一額外RF產生器，其中該額外RF產生器用以產生與該脈動訊號同步的一額外RF訊號。 For example, the 15th radio frequency (RF) generator in the scope of the patent application, wherein the processor is used to supply the pulsation signal to an additional RF generator, and the additional RF generator is used to generate an additional pulsation signal synchronized with the RF signal. 如申請專利範圍第15項之射頻(RF)產生器，其中該阻抗匹配電路基於該RF訊號產生一經修改的RF訊號，其中該阻抗匹配電路藉由匹配該電漿室及一RF傳輸線之阻抗與該RF產生器及一RF纜線的阻抗而產生該經修改的RF訊號，其中該RF傳輸線將該電漿室耦合至該阻抗匹配電路，其中該RF纜線將該RF產生器耦合至該阻抗匹配電路。 For example, the 15th radio frequency (RF) generator in the scope of the patent application, wherein the impedance matching circuit generates a modified RF signal based on the RF signal, wherein the impedance matching circuit matches the impedance of the plasma chamber and an RF transmission line with The RF generator and the impedance of an RF cable generate the modified RF signal, wherein the RF transmission line couples the plasma chamber to the impedance matching circuit, and the RF cable couples the RF generator to the impedance Matching circuit. 如申請專利範圍第15項之射頻(RF)產生器，其中該複數次狀態之一者期間的該RF訊號之功率位準與該等狀態之一者期間的該RF訊號之功率 位準相同，其中該複數次狀態之另一者期間的該RF訊號之功率位準與該等狀態之另一者期間的該RF訊號之功率位準相同。 For example, the 15th radio frequency (RF) generator in the scope of patent application, wherein the power level of the RF signal during one of the multiple states and the power of the RF signal during one of the states The levels are the same, wherein the power level of the RF signal during the other of the plurality of states is the same as the power level of the RF signal during the other of the states. 如申請專利範圍第15項之射頻(RF)產生器，其中該複數次狀態包含一第一次狀態、一第二次狀態、一第三次狀態與一第四次狀態，其中該RF訊號的該功率具有複數功率位準，其中該複數功率位準的一第一功率位準自該第一次狀態轉換至該第二次狀態中該複數功率位準的一第二功率位準，其中該第二功率位準接著轉換至該第一次狀態中的該第一功率位準，其中該第一功率位準接著轉換至該第二次狀態中的該第二功率位準，其中該第二功率位準接著轉換至該第三次狀態中的該複數功率位準的一第三功率位準，其中該第三功率位準接著轉換至該複數功率位準之一第四功率位準以達成該第四次狀態，其中該第四功率位準接著轉換至該第三功率位準以達到該第三次狀態，其中該第三功率位準接著轉換至該第四功率位準。 For example, the 15th radio frequency (RF) generator in the scope of the patent application, wherein the multiple states include a first state, a second state, a third state, and a fourth state, where the RF signal The power has a complex power level, wherein a first power level of the complex power level transitions from the first state to a second power level of the complex power level in the second state, wherein the The second power level is then converted to the first power level in the first state, wherein the first power level is then converted to the second power level in the second state, wherein the second power level The power level is then converted to a third power level of the complex power level in the third state, where the third power level is then converted to a fourth power level of the complex power level to achieve The fourth state, wherein the fourth power level is then converted to the third power level to achieve the third state, wherein the third power level is then converted to the fourth power level. 一種在一狀態期間中的次脈動用之方法，包含：基於和一脈動訊號相關的資訊產生該脈動訊號，該脈動訊號具有一第一狀態內的複數次狀態且具有一第二狀態內的複數次狀態，該第一狀態的該複數次狀態以大於該第一及第二狀態之頻率的頻率相對於彼此交替，且該第二狀態的該複數次狀態以大於該第一及第二狀態之頻率的頻率相對於彼此交替； 提供該脈動訊號，以控制由一第一射頻(RF)產生器產生的一第一RF訊號之功率，該功率受到控制以與該脈動訊號同步；將該第一RF訊號供給至一阻抗匹配電路，該第一RF訊號具有該第一狀態的該複數次狀態且具有該第二狀態的該複數次狀態。 A method for secondary pulsation during a state period, comprising: generating the pulsation signal based on information related to a pulsation signal, the pulsation signal having a plurality of states in a first state and a plurality of states in a second state In the second state, the multiple states of the first state alternate with respect to each other at a frequency greater than the frequency of the first and second states, and the multiple states of the second state are greater than those of the first and second states The frequency of the frequency alternates with respect to each other; The pulsation signal is provided to control the power of a first RF signal generated by a first radio frequency (RF) generator, the power is controlled to be synchronized with the pulsation signal; the first RF signal is supplied to an impedance matching circuit , The first RF signal has the multiple state of the first state and the multiple state of the second state. 如申請專利範圍第21項之在一狀態期間中的次脈動用之方法，其中和該脈動訊號有關的該資訊包含該第一狀態的該複數次狀態之頻率、該第一狀態的該複數次狀態之工作週期、該第一狀態出現的時間、該第二狀態的該複數次狀態之頻率、該第二狀態的該複數次狀態之工作週期、及該第二狀態出現的時間。 For example, the method for sub-pulsation in a state period of item 21 of the scope of patent application, wherein the information related to the pulsation signal includes the frequency of the plurality of states of the first state, and the plurality of states of the first state The duty cycle of the state, the time when the first state appears, the frequency of the multiple states of the second state, the duty cycle of the multiple states of the second state, and the time when the second state appears. 如申請專利範圍第21項之在一狀態期間中的次脈動用之方法，更包含：從一主機電腦或一第二RF產生器接收和該脈動訊號有關的該資訊。 For example, the method for sub-pulsation in a state period in item 21 of the scope of the patent application further includes: receiving the information related to the pulsation signal from a host computer or a second RF generator. 如申請專利範圍第21項之在一狀態期間中的次脈動用之方法，其中該第一狀態的該複數次狀態包含一第一次狀態及一第二次狀態，其中該第一RF訊號具有複數功率位準，其中在該第一次狀態期間，該第一RF訊號具有該複數功率位準的一第一功率位準，且在該第二次狀態期間，該第一RF訊號具有該複數功率位準的一第二功率位準，其中在該第一狀態期間，該第一及第二次狀態重複複數次，且其中該第一功率位準與該第二功率位準不同。 For example, the method for sub-pulsation in a state period of the 21st patent application, wherein the multiple states of the first state include a first state and a second state, wherein the first RF signal has A complex power level, wherein during the first state, the first RF signal has a first power level of the complex power level, and during the second state, the first RF signal has the complex A second power level of the power level, wherein during the first state, the first and second states are repeated a plurality of times, and the first power level is different from the second power level. 如申請專利範圍第21項之在一狀態期間中的次脈動用之方法，更包含藉由一第二RF產生器，將具有該第一狀態而無該第一狀態之該複數 次狀態、且具有該第二狀態而無該第二狀態之該複數次狀態的一第二RF訊號提供至該阻抗匹配電路。 For example, the method for sub-pulsation in a state period of item 21 of the scope of the patent application further includes a second RF generator that will have the first state without the plural number of the first state A second RF signal in the sub-state and the multiple sub-states having the second state without the second state is provided to the impedance matching circuit. 如申請專利範圍第21項之在一狀態期間中的次脈動用之方法，其中在該第一狀態期間，一蝕刻操作係於一基板上執行，且在該第二狀態期間，另一蝕刻操作係於該基板上執行。 For example, the method for sub-pulsation in a state period in the 21st state of the patent application, wherein during the first state, an etching operation is performed on a substrate, and during the second state, another etching operation It is executed on the substrate. 如申請專利範圍第21項之在一狀態期間中的次脈動用之方法，其中在該第一及第二狀態期間，相同類型的處理操作係於一基板上執行。 For example, the method for sub-pulsation in a state period in item 21 of the scope of the patent application, wherein during the first and second state periods, the same type of processing operation is performed on a substrate. 一種在一狀態期間中的次脈動用之方法，包含：藉由一第一射頻(RF)產生器之一數位訊號處理器產生一脈動訊號，該脈動訊號具有一第一狀態內的複數次狀態且具有一第二狀態內的複數次狀態，該第一狀態及該第二狀態之各者的該複數次狀態以大於該第一及第二狀態之頻率的頻率相對於彼此交替；藉由該第一RF產生器的一RF電源，產生與該脈動訊號同步的一第一RF訊號，其中該第一RF訊號在該脈動訊號之一週期的一第一時間期間具有該第一狀態的該複數次狀態，且在該脈動訊號之該週期的一第二時間期間具有該第二狀態的該複數次狀態；及將該第一RF訊號提供至連接到一電漿室之一電極的一阻抗匹配電路。 A method for sub-pulsation in a state period, comprising: generating a pulsation signal by a digital signal processor of a first radio frequency (RF) generator, the pulsation signal having a plurality of sub-states in a first state And has a plurality of states in a second state, and the plurality of states of each of the first state and the second state alternate with each other at a frequency greater than the frequency of the first and second states; An RF power supply of the first RF generator generates a first RF signal synchronized with the pulsation signal, wherein the first RF signal has the plurality of the first state during a first time period of a cycle of the pulsation signal Sub-state, and the plurality of sub-states having the second state during a second time period of the cycle of the pulsation signal; and providing the first RF signal to an impedance matching connected to an electrode of a plasma chamber Circuit. 如申請專利範圍第28項之在一狀態期間中的次脈動用之方法，更包含藉由一第二RF產生器，將具有該第一狀態而無該第一狀態之該複數次狀態、且具有該第二狀態而無該第二狀態之該複數次狀態的一第二RF訊號提供至連接到該電極的該阻抗匹配電路，其中該第二RF訊號的該第一狀 態係於該第一時間期間產生，且該第二RF訊號的該第二狀態係於該第二時間期間產生。 For example, the method for sub-pulsation in a state period of item 28 of the scope of patent application further includes a second RF generator that will have the first state without the first state of the multiple states, and A second RF signal of the plurality of states having the second state without the second state is provided to the impedance matching circuit connected to the electrode, wherein the first state of the second RF signal The state is generated during the first time period, and the second state of the second RF signal is generated during the second time period. 如申請專利範圍第28項之在一狀態期間中的次脈動用之方法，其中產生該脈動訊號係自和該脈動訊號有關的資訊執行。 For example, the method for sub-pulsation in a state period in item 28 of the scope of patent application, wherein the generation of the pulsation signal is executed from the information related to the pulsation signal. 如申請專利範圍第30項之在一狀態期間中的次脈動用之方法，其中和該脈動訊號有關的該資訊包含該第一狀態的該複數次狀態之頻率、該第一狀態的該複數次狀態之工作週期、該第一狀態出現的時間、該第二狀態的該複數次狀態之頻率、該第二狀態的該複數次狀態之工作週期、及該第二狀態出現的時間。 For example, the method for sub-pulsation in a state period in item 30 of the scope of patent application, wherein the information related to the pulsation signal includes the frequency of the plurality of states of the first state, and the plurality of states of the first state The duty cycle of the state, the time when the first state appears, the frequency of the multiple states of the second state, the duty cycle of the multiple states of the second state, and the time when the second state appears. 如申請專利範圍第30項之在一狀態期間中的次脈動用之方法，更包含從一主機電腦或一第二RF產生器接收和該脈動訊號有關的該資訊。 For example, the method for sub-pulsation in a state period in item 30 of the scope of the patent application further includes receiving the information related to the pulsation signal from a host computer or a second RF generator. 如申請專利範圍第28項之在一狀態期間中的次脈動用之方法，其中該複數次狀態包含一第一次狀態及一第二次狀態，其中該第一RF訊號具有複數功率位準，其中在該第一次狀態期間，該第一RF訊號具有該複數功率位準的一第一功率位準，且在該第二次狀態期間，該第一RF訊號具有該複數功率位準的一第二功率位準，其中在該第一狀態期間，該第一及第二次狀態重複複數次，且其中該第一功率位準與該第二功率位準不同。 For example, the method for sub-pulsation in a state period in item 28 of the scope of patent application, wherein the plurality of states includes a first state and a second state, wherein the first RF signal has a complex power level, Wherein during the first state, the first RF signal has a first power level of the complex power level, and during the second state, the first RF signal has a first power level of the complex power level A second power level, wherein during the first state, the first and second states are repeated a plurality of times, and the first power level is different from the second power level. 如申請專利範圍第28項之在一狀態期間中的次脈動用之方法，其中在該第一狀態期間，一蝕刻操作係於一基板上執行，且在該第二狀態期間，另一蝕刻操作係於該基板上執行。 For example, the method for sub-pulsation in a state period of the 28th patent application, wherein during the first state, an etching operation is performed on a substrate, and during the second state, another etching operation It is executed on the substrate. 如申請專利範圍第28項之在一狀態期間中的次脈動用之方法，其中在該第一及第二狀態期間，相同類型的處理操作係於一基板上執行。 For example, the method for sub-pulsation in a state period in item 28 of the scope of the patent application, wherein during the first and second state periods, the same type of processing operation is performed on a substrate. 一種在一狀態期間中的次脈動用之方法，包含：自一時脈源接收一時脈訊號，該時脈訊號具有包含一第一狀態及一第二狀態的兩狀態；基於該時脈訊號的該等狀態產生一脈動訊號，該脈動訊號具有該第一狀態內的複數次狀態，且具有該第二狀態內的複數次狀態，該第一狀態及該第二狀態之各者的該複數次狀態以大於該第一及第二狀態之頻率的頻率相對於彼此交替；提供該脈動訊號以控制藉由一第一射頻(RF)產生器所產生之一第一RF訊號的功率，該第一RF訊號具有該第一狀態的該複數次狀態及該第二狀態的該複數次狀態，且該第一RF訊號的該功率係配置成與該脈動訊號同步；及經由一阻抗匹配電路將該第一RF訊號供給至一電漿室的一電極。 A method for sub-pulsation during a state period includes: receiving a clock signal from a clock source, the clock signal having two states including a first state and a second state; the clock signal-based The waiting state generates a pulsation signal, the pulsation signal has a plurality of states in the first state, and has a plurality of states in the second state, the plurality of states of each of the first state and the second state Alternating with respect to each other at a frequency greater than the frequency of the first and second states; providing the pulsation signal to control the power of a first RF signal generated by a first radio frequency (RF) generator, the first RF The signal has the plurality of states of the first state and the plurality of states of the second state, and the power of the first RF signal is configured to be synchronized with the pulsating signal; and the first RF signal is synchronized with the pulsation signal through an impedance matching circuit The RF signal is supplied to an electrode of a plasma chamber. 如申請專利範圍第36項之在一狀態期間中的次脈動用之方法，更包含從一第二RF產生器供給一第二RF訊號至連接到該電極的該阻抗匹配電路，該第二RF訊號具有該第一狀態而無該複數次狀態、且具有該第二狀態而無該複數次狀態。 For example, the method for sub-pulsation in a state period in item 36 of the scope of the patent application further includes supplying a second RF signal from a second RF generator to the impedance matching circuit connected to the electrode, and the second RF The signal has the first state without the multiple state, and has the second state without the multiple state. 如申請專利範圍第36項之在一狀態期間中的次脈動用之方法，其中在該第一狀態期間，一蝕刻操作係於一基板上執行，且在該第二狀態期間，另一蝕刻操作係於該基板上執行。 For example, the method for sub-pulsation in a state period of the 36th patent application, wherein during the first state, an etching operation is performed on a substrate, and during the second state, another etching operation It is executed on the substrate. 如申請專利範圍第36項之在一狀態期間中的次脈動用之方法，其中在該第一及第二狀態期間，相同類型的處理操作係於一基板上執行。 For example, the method for sub-pulsation in a state period in item 36 of the scope of the patent application, wherein during the first and second states, the same type of processing operation is performed on a substrate. 如申請專利範圍第36項之在一狀態期間中的次脈動用之方法，其中該脈動訊號自該第一狀態轉換至該第二狀態之該兩次狀態之一第一次狀態，接著自該第一次狀態轉換至該第二狀態之該兩次狀態之一第二次狀態，然後自該第二狀態之該第二次狀態轉換至該第二狀態之該第一次狀態，接著自該第二狀態之該第一次狀態轉換至該第二狀態之該第二次狀態，且然後自該第二狀態之該第二次狀態轉換至該第一狀態。 For example, the method for sub-pulsation in a state period in item 36 of the scope of the patent application, wherein the pulse signal transitions from the first state to the second state, one of the two states, the first state, and then from the The first state transitions to the second state of one of the two states of the second state, and then transitions from the second state of the second state to the first state of the second state, and then from the The first state of the second state is transitioned to the second state of the second state, and then the second state of the second state is transitioned to the first state. 一種控制器，包含：一處理器，用以產生一脈動訊號，該脈動訊號具有一第一狀態內的複數次狀態且具有一第二狀態內的複數次狀態，該第一狀態的該複數次狀態以大於該第一及第二狀態之頻率的頻率相對於彼此交替，且該第二狀態的該複數次狀態以大於該第一及第二狀態之頻率的頻率相對於彼此交替，其中該處理器係用以提供該脈動訊號以控制由一射頻(RF)產生器產生的一RF訊號之功率，其中該RF訊號的該功率受到控制以與該脈動訊號同步、且具有該第一狀態之該複數次狀態及該第二狀態之該複數次狀態；及一記憶體裝置，耦合至該處理器。 A controller includes: a processor for generating a pulsation signal, the pulsation signal has a plurality of states in a first state and a plurality of states in a second state, the plurality of states in the first state The states alternate with respect to each other at a frequency greater than the frequency of the first and second states, and the plurality of states of the second state alternate with each other at a frequency greater than the frequency of the first and second states, wherein the processing The device is used to provide the pulsation signal to control the power of an RF signal generated by a radio frequency (RF) generator, wherein the power of the RF signal is controlled to be synchronized with the pulsation signal and has the first state A plurality of sub-states and the plurality of sub-states of the second state; and a memory device coupled to the processor. 如申請專利範圍第41項之控制器，其中該脈動訊號係基於該第一狀態的該複數次狀態之頻率、該第一狀態的該複數次狀態之工作週期、該第一狀態出現的時間、該第二狀態的該複數次狀態之頻率、該第二狀態的該複數次狀態之工作週期、及該第二狀態出現的時間而產生。 For example, the 41st controller in the scope of patent application, wherein the pulsation signal is based on the frequency of the multiple states of the first state, the duty cycle of the multiple states of the first state, the time when the first state appears, The frequency of the multiple states of the second state, the duty cycle of the multiple states of the second state, and the time when the second state occurs. 如申請專利範圍第41項之控制器，其中該第一狀態的該複數次狀態包含一第一次狀態及一第二次狀態，其中該RF訊號具有該功率之複數功率位準， 其中在該第一次狀態期間，該RF訊號具有該複數功率位準的一第一功率位準，且在該第二次狀態期間，該RF訊號具有該複數功率位準的一第二功率位準，其中在該第一狀態期間，該第一及第二次狀態重複複數次，且其中該第一功率位準與該第二功率位準不同。 Such as the 41st controller in the scope of patent application, wherein the multiple states of the first state include a first state and a second state, wherein the RF signal has a complex power level of the power, Wherein during the first state, the RF signal has a first power level of the complex power level, and during the second state, the RF signal has a second power level of the complex power level During the first state, the first and second states are repeated a plurality of times, and the first power level is different from the second power level. 如申請專利範圍第41項之控制器，其中該第二狀態的該複數次狀態包含一第一次狀態及一第二次狀態，其中該RF訊號具有複數功率位準，其中在該第一次狀態期間，該RF訊號具有該複數功率位準的一第一功率位準，且在該第二次狀態期間，該RF訊號具有該複數功率位準的一第二功率位準，其中在該第二狀態期間，該第一及第二次狀態重複複數次，且其中該複數功率位準的該第一功率位準與該複數功率位準的該第二功率位準不同。 For example, the controller of item 41 of the scope of patent application, wherein the multiple state of the second state includes a first state and a second state, wherein the RF signal has a complex power level, wherein the first state During the state, the RF signal has a first power level of the complex power level, and during the second state, the RF signal has a second power level of the complex power level. During the two states, the first and second states are repeated a plurality of times, and the first power level of the complex power level is different from the second power level of the complex power level. 如申請專利範圍第41項之控制器，其中在該第一及第二狀態期間，相同類型的處理操作係於一基板上執行。 Such as the 41st controller in the scope of patent application, wherein during the first and second states, the same type of processing operation is performed on a substrate. 如申請專利範圍第41項之控制器，其中該RF訊號在一時脈訊號之一週期的一第一時間期間具有該第一狀態的該複數次狀態，且在該時脈訊號之該週期的一第二時間期間具有該第二狀態的該複數次狀態。 For example, the 41st controller in the scope of the patent application, wherein the RF signal has the plurality of states of the first state during a first time period of a cycle of a clock signal, and is in a period of the clock signal During the second time, there is the plurality of states of the second state. 如申請專利範圍第41項之控制器，其中該脈動訊號自該第一狀態轉換至該第二狀態之該複數次狀態之一第一次狀態，接著自該第二狀態之該第一次狀態轉換至該第二狀態之該複數次狀態之一第二次狀態，然後自該 第二狀態之該第二次狀態轉換至該第二狀態之該第一次狀態，接著自該第二狀態之該第一次狀態轉換至該第二狀態之該第二次狀態，且然後自該第二狀態之該第二次狀態轉換至該第一狀態。 For example, the 41st controller in the scope of patent application, in which the pulsation signal transitions from the first state to the second state, the first state of the plurality of states, and then the first state from the second state To the second state of one of the multiple states of the second state, and then from the The second state of the second state transitions to the first state of the second state, then the first state of the second state transitions to the second state of the second state, and then from The second state of the second state transitions to the first state. 如申請專利範圍第41項之控制器，其中該脈動訊號自該第二狀態轉換至該第一狀態之該複數次狀態之一第一次狀態，接著自該第一狀態之該第一次狀態轉換至該第一狀態之該複數次狀態之一第二次狀態，然後自該第一狀態之該第二次狀態轉換至該第一狀態之該第一次狀態，接著自該第一狀態之該第一次狀態轉換至該第一狀態之該第二次狀態，且然後自該第一狀態之該第二次狀態轉換至該第二狀態。 For example, the 41st controller in the scope of patent application, wherein the pulsation signal transitions from the second state to the first state of one of the plurality of states of the first state, and then from the first state of the first state Transition to the second state of one of the multiple states of the first state, then transition from the second state of the first state to the first state of the first state, and then from the first state The first state transitions to the second state of the first state, and then the second state transitions from the first state to the second state. 一種電漿工具，包含：一射頻(RF)產生器，用以產生一RF訊號；一匹配部，耦合至RF電源，以接收該RF訊號並從該RF訊號產生一經修改的訊號；一電漿室，耦合至該匹配部，以接收該經修改的訊號；及一控制器，耦合至該RF產生器，其中該控制器係用以產生一脈動訊號，該脈動訊號具有一第一狀態內的複數次狀態、且具有一第二狀態內的複數次狀態，該第一狀態的該複數次狀態以大於該第一及第二狀態之頻率的頻率相對於彼此交替，且該第二狀態的該複數次狀態以大於該第一及第二狀態之頻率的頻率相對於彼此交替；其中該控制器係用以提供該脈動訊號，以控制由該RF產生器產生的該RF訊號之功率，其中該RF訊號之該功率受到控制以與該脈動訊號同步、且具有該第一狀態的該複數次狀態及該第二狀態的該複數次狀態。 A plasma tool includes: a radio frequency (RF) generator for generating an RF signal; a matching part coupled to an RF power source to receive the RF signal and generate a modified signal from the RF signal; a plasma Chamber, coupled to the matching part to receive the modified signal; and a controller, coupled to the RF generator, wherein the controller is used to generate a pulsation signal, the pulsation signal has a first state A plurality of states, and a plurality of states within a second state, the plurality of states of the first state alternate with respect to each other at a frequency greater than the frequency of the first and second states, and the second state A plurality of states alternate with respect to each other at a frequency greater than the frequency of the first and second states; wherein the controller is used to provide the pulsation signal to control the power of the RF signal generated by the RF generator, wherein the The power of the RF signal is controlled to be synchronized with the pulsation signal, and has the plurality of states of the first state and the plurality of states of the second state. 如申請專利範圍第49項之電漿工具，其中該脈動訊號係基於該第一狀態的該複數次狀態之頻率、該第一狀態的該複數次狀態之工作週期、該第一狀態出現的時間、該第二狀態的該複數次狀態之頻率、該第二狀態的該複數次狀態之工作週期、及該第二狀態出現的時間而產生。 For example, the plasma tool of item 49 of the scope of patent application, wherein the pulsation signal is based on the frequency of the plurality of states of the first state, the duty cycle of the plurality of states of the first state, and the time when the first state appears , The frequency of the multiple states of the second state, the duty cycle of the multiple states of the second state, and the time when the second state occurs. 如申請專利範圍第49項之電漿工具，其中該第一狀態的該複數次狀態包含一第一次狀態及一第二次狀態，其中該RF訊號具有該功率之複數功率位準，其中在該第一次狀態期間，該RF訊號具有該複數功率位準的一第一功率位準，且在該第二次狀態期間，該RF訊號具有該複數功率位準的一第二功率位準，其中在該第一狀態期間，該第一及第二次狀態重複複數次，且其中該第一功率位準與該第二功率位準不同。 For example, the plasma tool of item 49 of the scope of patent application, wherein the plurality of states of the first state includes a first state and a second state, wherein the RF signal has a complex power level of the power, wherein During the first state, the RF signal has a first power level of the complex power level, and during the second state, the RF signal has a second power level of the complex power level, During the first state, the first and second states are repeated a plurality of times, and the first power level is different from the second power level. 如申請專利範圍第49項之電漿工具，其中該第二狀態的該複數次狀態包含一第一次狀態及一第二次狀態，其中該RF訊號具有複數功率位準，其中在該第一次狀態期間，該RF訊號具有該複數功率位準的一第一功率位準，且在該第二次狀態期間，該RF訊號具有該複數功率位準的一第二功率位準，其中在該第二狀態期間，該第一及第二次狀態重複複數次，且其中該第一功率位準與該第二功率位準不同。 For example, the plasma tool of item 49 of the scope of patent application, wherein the plurality of states of the second state includes a first state and a second state, wherein the RF signal has a plurality of power levels, wherein the first state During the secondary state, the RF signal has a first power level of the complex power level, and during the second state, the RF signal has a second power level of the complex power level, wherein During the second state, the first and second states are repeated multiple times, and the first power level is different from the second power level. 如申請專利範圍第49項之電漿工具，其中在該第一及第二狀態期間，相同類型的處理操作係於一基板上執行。 For example, the plasma tool of item 49 of the scope of patent application, wherein during the first and second states, the same type of processing operation is performed on a substrate. 如申請專利範圍第49項之電漿工具，其中該RF訊號在一時脈訊號之一週期的一第一時間期間具有該第一狀態的該複數次狀態，且在該時脈訊號之該週期的一第二時間期間具有該第二狀態的該複數次狀態。 For example, the plasma tool of item 49 of the scope of patent application, wherein the RF signal has the plurality of states of the first state during a first period of a cycle of a clock signal, and is in the period of the clock signal The plurality of states having the second state during a second time period. 如申請專利範圍第49項之電漿工具，其中該脈動訊號自該第一狀態轉換至該第二狀態之該複數次狀態之一第一次狀態，接著自該第二狀態之該第一次狀態轉換至該第二狀態之該複數次狀態之一第二次狀態，然後自該第二狀態之該第二次狀態轉換至該第二狀態之該第一次狀態，接著自該第二狀態之該第一次狀態轉換至該第二狀態之該第二次狀態，且然後自該第二狀態之該第二次狀態轉換至該第一狀態。 For example, the plasma tool of item 49 in the scope of patent application, wherein the pulsation signal transitions from the first state to the second state in the first state of the plurality of states, and then from the first state in the second state State transition to one of the second state of the second state, then transition from the second state of the second state to the first state of the second state, and then from the second state The first state transitions to the second state of the second state, and then the second state transitions from the second state to the first state. 如申請專利範圍第49項之電漿工具，其中該脈動訊號自該第二狀態轉換至該第一狀態之該複數次狀態之一第一次狀態，接著自該第一狀態之該第一次狀態轉換至該第一狀態之該複數次狀態之一第二次狀態，然後自該第一狀態之該第二次狀態轉換至該第一狀態之該第一次狀態，接著自該第一狀態之該第一次狀態轉換至該第一狀態之該第二次狀態，且然後自該第一狀態之該第二次狀態轉換至該第二狀態。 For example, the plasma tool of item 49 in the scope of patent application, wherein the pulse signal transitions from the second state to the first state of the plurality of states of the first state, and then from the first state of the first state State transitions to the second state of one of the multiple states of the first state, then transitions from the second state of the first state to the first state of the first state, and then from the first state The first state transitions to the second state of the first state, and then transitions from the second state of the first state to the second state.
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