TWI735697B - Manufacturing method of glass substrate - Google Patents

Manufacturing method of glass substrate Download PDF

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TWI735697B
TWI735697B TW106138542A TW106138542A TWI735697B TW I735697 B TWI735697 B TW I735697B TW 106138542 A TW106138542 A TW 106138542A TW 106138542 A TW106138542 A TW 106138542A TW I735697 B TWI735697 B TW I735697B
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glass substrate
processor
chamber
port
conveying
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TW106138542A
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TW201830515A (en
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山本好晴
中弘樹
大野和宏
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日商日本電氣硝子股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063—Transporting devices for sheet glass
    • B65G49/064—Transporting devices for sheet glass in a horizontal position
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2201/00—Indexing codes relating to handling devices, e.g. conveyors, characterised by the type of product or load being conveyed or handled
    • B65G2201/02—Articles
    • B65G2201/0214—Articles of special size, shape or weigh
    • B65G2201/022—Flat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一邊將從搬入口(8aa)搬入腔室(8)內的玻璃基板(2)以平放姿勢沿著搬送路徑搬送，一邊藉由配置於搬送路徑上的處理器(5)供給的處理氣體(4)對下表面(2a)實施蝕刻處理後，把處理後之玻璃基板(2)從搬出口(8ab)朝腔室(8)外搬出之玻璃基板之製造方法，係作成從在腔室(8)內之與搬送路徑相比更靠上方側配置的抽吸口(12a)、朝腔室(8)外進行排氣。While the glass substrate (2) brought into the chamber (8) from the import port (8aa) is transported along the transport path in a horizontal position, the processing gas (5) is supplied by the processor (5) arranged on the transport path. 4) After the lower surface (2a) is etched, the processed glass substrate (2) is carried out from the export port (8ab) to the outside of the chamber (8). The manufacturing method of the glass substrate is made from the chamber ( 8) The suction port (12a) arranged on the upper side of the conveying path in the inside is exhausted to the outside of the chamber (8).

Description

玻璃基板之製造方法Manufacturing method of glass substrate

[0001] 本發明係有關包含一邊以平放姿勢搬送玻璃基板，一邊利用氟化氫等處理氣體對玻璃基板的下表面實施蝕刻處理的製程之玻璃基板之製造方法。[0001] The present invention relates to a method for manufacturing a glass substrate including a process in which the lower surface of the glass substrate is etched with a processing gas such as hydrogen fluoride while the glass substrate is conveyed in a horizontal position.

[0002] 以周知之方式，玻璃基板，可以被採用於液晶顯示器、電漿顯示器、有機電致發光顯示器、場發射顯示器等所代表的平板顯示器、或智慧型手機、平板型電腦等行動終端之多種多樣的電子裝置。 　　[0003] 於該玻璃基板之製造製程，有發生起因於靜電之問題。舉一例，在載置於對玻璃基板應該實施指定的處理之支撐台上時，有因靜電導致玻璃基板黏貼於支撐台之場合。這樣的場合，在從支撐台抬起已結束處理的玻璃基板時，有造成玻璃基板破損之情況。 　　[0004] 於是，作為這類的問題的對策，已知藉由在實施指定的處理之前，利用氟化氫等處理氣體對玻璃基板的表面實施蝕刻處理，使表面粗糙化，來迴避起因於靜電的問題發生之手法。於是，在專利文獻1，揭示供對玻璃基板的表面實施蝕刻處理用之手法之一例。 　　[0005] 於同文獻所揭示之手法，係一邊以平放姿勢搬送玻璃基板，一邊利用配置於其搬送路徑上的處理器(於同文獻，為表面處理裝置)供給的處理氣體，對玻璃基板的上下表面中的下表面實施蝕刻處理。 　　[0006] 又，於同文獻並未明示，但在實行蝕刻處理之場合，為了防止處理氣體朝外部漏出，通常是在將處理器以腔室圍起來之狀態下實行。在腔室，係形成供將蝕刻處理前的玻璃基板朝腔室內搬入用之搬入口、與供將蝕刻處理後的玻璃基板朝腔室外搬出用之搬出口。 [先前技術文獻] [專利文獻] 　　[0007] 　　[專利文獻1]日本特開2014-125414號公報[0002] In a well-known manner, glass substrates can be used in flat panel displays represented by liquid crystal displays, plasma displays, organic electroluminescence displays, field emission displays, or mobile terminals such as smart phones and tablet computers. A variety of electronic devices.　　[0003] During the manufacturing process of the glass substrate, there was a problem caused by static electricity. For example, when the glass substrate is placed on a support table where the specified treatment should be performed on the glass substrate, there are occasions where the glass substrate sticks to the support table due to static electricity. In such a case, when the glass substrate that has been processed is lifted from the support table, the glass substrate may be damaged. [0004] Therefore, as a countermeasure to this type of problem, it is known that the surface of the glass substrate is etched with a processing gas such as hydrogen fluoride before the specified processing is performed to roughen the surface and avoid the problem caused by static electricity. The way it happened. Therefore, Patent Document 1 discloses an example of a technique for performing an etching treatment on the surface of a glass substrate. [0005] In the method disclosed in the same document, the glass substrate is conveyed in a horizontal position while using a processing gas supplied from a processor (a surface treatment device in the same document) disposed on the conveying path of the glass substrate. The lower surface of the upper and lower surfaces is etched.　　[0006] Also, it is not clearly stated in the same document, but when etching is performed, in order to prevent the process gas from leaking to the outside, it is usually performed with the processor enclosed in a chamber. In the chamber, an import port for carrying the glass substrate before the etching process into the chamber and an export port for carrying the glass substrate after the etching process out of the chamber are formed. [Prior Art Document] [Patent Document] 　　[0007] 　　 [Patent Document 1] JP 2014-125414 A

[發明所欲解決之課題] 　　[0008] 然而，在採用上述手法之場合，會發生下述之類的應該解決的問題。 　　[0009] 亦即，在實行蝕刻處理時，處理氣體與玻璃基板發生反應而生成微小的生成物。該生成物，會造成趁著在腔室內發生的氣流而浮游等，而在玻璃基板上表面形成異物並附著之場合。於此，對於不是蝕刻處理對象之上表面，例如，導致在下游製程進行圖案形成透明導電膜等之處理，卻在上表面附著異物之狀態下進行處理時，成為圖案不良產生之原因。如此，在採用上述手法之場合，會發生由於異物往上表面附著，導致玻璃基板品質降低之問題。 　　[0010] 有鑑於上述情事作成之本發明，係在一邊以平放姿勢搬送玻璃基板，一邊利用處理氣體對玻璃基板的下表面實施蝕刻處理時，將防止玻璃基板品質降低作為技術上的課題。 [供解決課題之手段] 　　[0011] 為了解決上述課題而提出之本發明，係一邊將從搬入口搬入腔室內的玻璃基板以平放姿勢沿著搬送路徑搬送，一邊藉由配置於搬送路徑上的處理器供給的處理氣體對下表面實施蝕刻處理後，把處理後之玻璃基板從搬出口朝腔室外搬出之玻璃基板之製造方法，其特徵為從在腔室內之與搬送路徑相比更靠上方側配置的抽吸口、朝腔室外進行排氣。 　　[0012] 於此方法，係從在腔室內之與搬送路徑相比更靠上方側配置的抽吸口，朝腔室外進行排氣。因此，可以把由於處理氣體與玻璃基板之反應而被生成、有在玻璃基板上表面形成異物並附著之虞之生成物，伴隨通過抽吸口之往腔室外的排氣而從腔室內排除。結果，可以迴避在玻璃基板上表面的異物附著，可以防止玻璃基板之品質降低。 　　[0013] 在上述方法，最好是在玻璃基板的搬送方向之與處理器相比更靠下游側，從抽吸口朝腔室外進行排氣。 　　[0014] 於此方法，由於邊搬送玻璃基板邊實施蝕刻處理，生成物容易在生成後向玻璃基板的搬送方向的下游側移動。從而，如果作成在玻璃基板的搬送方向之與處理器相比更靠下游側，從抽吸口朝腔室外進行排氣，則有利於將生成物有效率地從腔室內排除。 　　[0015] 在上述方法，處理器，最好是使用具備上下夾著搬送路徑而對向的上部構成體與下部構成體，且於下部構成體具備對被形成於兩構成體的相互間之處理空間供給處理氣體的供氣口之處理器，並且，將第一虛設處理器配置於搬送路徑上之處理器與搬出口之間，該第一虛設處理器具有由搬送路徑的下方連到腔室外的排氣口，且從沿著搬送方向的方向來看具有與處理器同一外形。 　　[0016] 如此一來，藉由將第一虛設處理器配置於搬送路徑上之處理器與搬出口之間，即使在起因於腔室內外氣壓差，而發生氣流從搬出口流入腔室內之場合，也能迴避該氣流到達處理器。換言之，從沿著搬送方向的方向來看具有與處理器同一外形之第一虛設處理器，可以達成對氣流之防風壁作用。因此，得以恰當地去除由於流入的氣流的壓力，把處理器處理空間內的處理氣體刮跑，對蝕刻處理的實行造成妨害之類的疑慮。再者，由於第一虛設處理器具有由搬送路徑的下方連通至腔室外的排氣口，而可以伴隨玻璃基板的搬送，將被基板下表面拖曳而從處理空間內朝搬送方向下游側(第一虛設處理器側)流出的處理氣體、通過排氣口朝腔室外排出。藉此，可以防止從處理空間流出的處理氣體由搬出口朝腔室外漏出。 　　[0017] 在上述方法，最好是在玻璃基板的搬送方向之與第一虛設處理器相比更靠下游側，從抽吸口朝腔室外進行排氣。 　　[0018] 如前述，生成物容易在生成後向玻璃基板的搬送方向的下游側移動。從而，如果作成在腔室內之盡可能地搬送方向下游側，朝腔室外進行排氣，則可以有效率地從腔室內排除生成物。因此，如果可以在玻璃基板的搬送方向之與第一虛設處理器相比更靠下游側，從抽吸口朝腔室外進行排氣，則更有利於從腔室內將生成物排除。 　　[0019] 在上述方法，最好是將第二虛設處理器配置於搬送路徑上之處理器與搬入口之間，該第二虛設處理器具有由搬送路徑的下方連通至腔室外的排氣口，且從沿著搬送方向的方向來看具有與處理器同一外形。 　　[0020] 如此一來，藉由將第二虛設處理器配置於處理器與搬入口之間，就可以迴避從搬入口流入的氣流到達處理器。換言之，可以使第二虛設處理器達成對氣流之防風壁作用。藉此，得以恰當地去除由於氣流的壓力，把處理空間內的處理氣體刮跑，對蝕刻處理的實行造成妨害之類的疑慮。再者，藉由第二虛設處理器具有由搬送路徑的下方連通至腔室外的排氣口，可以更有效果地去除上述疑慮。亦即，關於從搬入口流入的氣流中沿著玻璃基板下表面朝處理器側流去之氣流，可以將此在到達處理器之前通過排氣口而朝腔室外排出。因此，可以更有效果地去除上述疑慮。 [發明之效果] 　　[0021] 根據本發明，可以在一邊以平放姿勢搬送玻璃基板，一邊利用處理氣體對玻璃基板的下表面實施蝕刻處理時，防止玻璃基板的品質降低。[Problems to be solved by the invention] 　　[0008] However, when the above-mentioned methods are adopted, the following problems that should be solved may occur.　　[0009] That is, when the etching process is performed, the processing gas reacts with the glass substrate to generate minute products. This product may cause foreign matter to form and adhere to the upper surface of the glass substrate due to the airflow generated in the chamber and float. Here, for the upper surface that is not the subject of etching treatment, for example, when processing is performed in a downstream process for patterning a transparent conductive film, but the upper surface is processed with foreign matter attached to it, it becomes a cause of pattern defects. In this way, when the above-mentioned method is adopted, the problem of the deterioration of the quality of the glass substrate due to the adhesion of foreign matter to the upper surface may occur.　　[0010] The present invention, made in view of the above circumstances, regards the prevention of deterioration of the quality of the glass substrate as a technical issue when the lower surface of the glass substrate is etched with a processing gas while the glass substrate is transported in a flat position. [Means for Solving the Problem] 　　[0011] The present invention proposed to solve the above-mentioned problem is to transport the glass substrate carried into the chamber from the carry-in port in a horizontal position along the transport path while being arranged on the transport path After the processing gas supplied by the processor performs the etching treatment on the lower surface, the glass substrate after the processing is carried out from the export outlet to the outside of the chamber. The method is characterized in that it is more reliable from the inside of the chamber than the conveying path The suction port arranged on the upper side exhausts air out of the chamber.　　[0012] In this method, exhaust is performed outside the chamber from the suction port arranged on the upper side of the conveying path in the chamber. Therefore, products that are generated by the reaction of the processing gas and the glass substrate and may form and adhere to the upper surface of the glass substrate can be exhausted from the chamber along with the exhaust gas to the outside of the chamber through the suction port. As a result, the adhesion of foreign matter on the upper surface of the glass substrate can be avoided, and the deterioration of the quality of the glass substrate can be prevented.　　[0013] In the above method, it is preferable to exhaust air from the suction port toward the outside of the chamber at a downstream side of the processor in the conveying direction of the glass substrate.　　[0014] In this method, since the etching process is performed while the glass substrate is being transported, the product is likely to move to the downstream side in the transport direction of the glass substrate after the production. Therefore, if the glass substrate is made to be exhausted from the suction port toward the outside of the chamber on the downstream side of the processor in the conveying direction of the glass substrate, it is advantageous to efficiently remove the product from the chamber. [0015] In the above method, the processor is preferably provided with an upper structure and a lower structure facing each other with a conveying path sandwiched between the upper and lower structures, and the lower structure is provided with a pair of processing that is formed between the two structures. The processor of the gas supply port where the processing gas is supplied in the space, and the first dummy processor is arranged between the processor on the conveying path and the export outlet, and the first dummy processor is connected to the outside of the chamber from the lower part of the conveying path The exhaust port has the same shape as the processor when viewed from the direction along the conveying direction. [0016] In this way, by arranging the first dummy processor between the processor on the conveying path and the export port, even when air flow occurs from the export port into the chamber due to the air pressure difference between the inside and outside of the chamber , Can also avoid the airflow to reach the processor. In other words, the first dummy processor having the same shape as the processor viewed from the direction along the conveying direction can achieve the function of a windproof wall to the airflow. Therefore, it is possible to appropriately remove the doubt that the processing gas in the processing space of the processor is scraped away due to the pressure of the inflowing air stream, which will hinder the execution of the etching processing. Furthermore, since the first dummy processor has an exhaust port connected to the outside of the chamber from the bottom of the conveying path, it can be dragged by the lower surface of the substrate along with the conveying of the glass substrate and moved from the processing space to the downstream side in the conveying direction (the first The processing gas flowing out of the side of a dummy processor is exhausted to the outside of the chamber through the exhaust port. Thereby, it is possible to prevent the processing gas flowing out of the processing space from leaking out of the chamber from the outlet.　　[0017] In the above method, it is preferable to perform exhaust from the suction port on the downstream side of the first dummy processor in the conveying direction of the glass substrate.　　[0018] As described above, the product easily moves to the downstream side in the conveying direction of the glass substrate after the production. Therefore, if it is made as far as possible downstream in the conveying direction in the chamber and exhausted to the outside of the chamber, the products can be efficiently removed from the chamber. Therefore, if it is possible to exhaust air from the suction port toward the outside of the chamber at a downstream side of the first dummy processor in the conveying direction of the glass substrate, it is more advantageous to remove products from the chamber. [0019] In the above method, it is preferable to arrange the second dummy processor between the processor on the conveying path and the import port, and the second dummy processor has an exhaust port communicating from the lower part of the conveying path to the outside of the chamber. , And viewed from the direction along the conveying direction, it has the same appearance as the processor.　　[0020] In this way, by arranging the second dummy processor between the processor and the import port, it is possible to avoid the airflow flowing in from the import port from reaching the processor. In other words, the second dummy processor can achieve the function of a windbreak against the airflow. Thereby, it is possible to appropriately remove the doubt that the processing gas in the processing space is scraped away due to the pressure of the airflow, which will hinder the execution of the etching processing. Furthermore, since the second dummy processor has an exhaust port connected to the outside of the chamber from the bottom of the conveying path, the above doubts can be more effectively removed. That is, regarding the airflow flowing in from the carry-in port toward the processor side along the lower surface of the glass substrate, it can be exhausted to the outside of the chamber through the exhaust port before reaching the processor. Therefore, the above doubts can be removed more effectively. [Effects of the invention] 　　[0021] According to the present invention, it is possible to prevent the quality of the glass substrate from deteriorating when the lower surface of the glass substrate is etched with a processing gas while the glass substrate is transported in a flat position.

[0023] 以下，針對關於本發明實施型態的玻璃基板之製造方法，參照附圖並加以說明。首先，說明玻璃基板之製造方法所用的玻璃基板之製造裝置。 　　[0024] 於此，在以下的說明，將玻璃基板的搬送方向(於圖1為由右向左的方向)標記為「搬送方向」。此外，將正交於搬送方向的玻璃基板的寬度方向(於圖1為對著紙面鉛直的方向)標記為「寬度方向」，同時將沿著「寬度方向」的長度標記為「全幅」或「寬度尺寸」。另外，將對著玻璃基板的上下表面鉛直的方向標記為「上下方向」。 　　[0025] 如圖1所示，玻璃基板之製造裝置1，作為主要的構成要素而具備：供以平放姿勢水平地搬送玻璃基板2用之搬送手段3，供對著搬送中的玻璃基板2的下表面2a利用處理氣體4(於本實施型態為氟化氫)實施蝕刻處理用之處理器5，噴射供防止對玻璃基板2的上表面2b蝕刻處理用的沖洗氣體6之沖洗氣體噴射噴嘴7，具有玻璃基板2的搬入口8aa及搬出口8ab、且供防止處理氣體4從被形成在自身的內部的空間9朝外部漏出用之腔室8，在玻璃基板2的搬送路徑上被配置在處理器5與搬出口8ab之間之第一虛設處理器10、及被配置在處理器5與搬入口8aa之間之第二虛設處理器11，與供把處理氣體4與玻璃基板2的下表面2a之反應所發生之生成物抽吸並朝腔室8外排出用之抽吸噴嘴12。 　　[0026] 搬送手段3，係由被排列在玻璃基板2的搬送路徑上之複數個輥子3a構成。利用該複數個輥子3a，而可以沿著直線上延伸的搬送路徑搬送玻璃基板2。於沿著搬送方向相鄰的輥子3a的相互間，使玻璃基板2下表面2a的全幅呈露出來之狀態。藉由該露出來的下表面2a與處理氣體4反應，而實施蝕刻處理並粗糙化下表面2a的全幅。又，作為搬送手段3，也可以使用複數個輥子3a以外之物，只要可以在搬送中使玻璃基板2下表面2a的全幅露出來之物，也可以使用其他物。 　　[0027] 處理器5，係具備將玻璃基板2的搬送路徑在上下挾著並相對向之作為下部構成體之本體部5a、作為上部構成體之頂板部5b、與作為供防止因頂板部5b的自重造成的撓曲用之補強構件之H鋼5c。在本體部5a與頂板部5b之相互間，形成供對通過此的玻璃基板2實施蝕刻處理用之處理空間13。該處理空間13係被形成為扁平的空間。使處理空間13的寬度尺寸W1(參照圖2)、及沿著上下方向的厚度尺寸T1，分別大於玻璃基板2的全幅W2(參照圖2)、及玻璃基板2的厚度T2。 　　[0028] 於此，在玻璃基板2從處理空間13之外進入內部時，為了防止附隨於這並存在於玻璃基板2周圍的空氣等氣體流入處理空間13，使沿著搬送方向之處理空間13的長度尺寸L1，作成300mm～2000mm的範圍內為佳，在600mm～1000mm的範圍內更佳。又，從使沖洗氣體6適當噴射之觀點而言，上述的長度尺寸L1，最好是不同於本實施型態之態樣，比沿著玻璃基板2的搬送方向之長度還長。此外，處理空間13的厚度尺寸T1，最好是作成4mm～30mm之範圍內。再者，上述的長度尺寸L1與厚度尺寸T1之比率(長度尺寸L1/厚度尺寸T1)的數值，最好是設定在10～250之範圍內。 　　[0029] 本體部5a，係具有直方體狀的外形。該本體部5a，係具備供朝處理空間13噴射並供給處理氣體4用之供氣口14，供從處理空間13將處理氣體4抽吸並排氣用之排氣口15，與供加熱被供給到處理空間13的處理氣體4、及防止因處理氣體4造成的結露用之加熱器等加熱手段(省略圖示)。排氣口15，分別被配置在本體部5a之搬送方向的上游側端部與下游側端部。相對於此，供氣口14，在上游側端部的排氣口15與下游側端部的排氣口15之間，沿著搬送方向被配置複數個(於本實施型態為三個)。 　　[0030] 使複數個供氣口14中之搬送方向的最下游側的供氣口14，朝處理空間13供氣的處理氣體4的流量為最多，於本實施型態，相較於其他的供氣口14而供給二倍流量的處理氣體4。另一方面，在複數個供氣口14的相互間，使所供給的處理氣體4的濃度為相同。各供氣口14，係於沿著搬送方向相鄰的輥子3a的相互間與處理空間13接續。再者，使各供氣口14供給的處理氣體4的流量，各自每單位時間為一定。於此，關於沿著搬送方向的距離，使從最上游側的供氣口14到中央的供氣口14為止的距離L2、與從中央的供氣口14到最下游側的供氣口14為止的距離L3呈相等。又，於本實施型態，供氣口14被配置三個，但並不以此為限，可以是配置二個，抑或配置四個以上。 　　[0031] 各個上游側端部的排氣口15及下游側端部的排氣口15，可以將從處理空間13抽吸的處理氣體4送入被形成在本體部5a內部的空間16。空間16，係與被接續在腔室8外配置的洗淨集塵裝置(省略圖示)之排氣管17相連。藉此，通過排氣口15而從處理空氣13被送入空間16的處理氣體4，之後，係通過排氣管17而從空間16朝洗淨集塵裝置被排氣。又，排氣管17，係接續在空間16之搬送方向的下游側端部。在上游側端部的排氣口15及下游側端部的排氣口15，也可以設置機構而個別地調節排氣的氣體(「氣體」，不僅是處理氣體4，也包含在從處理空間13之外被拉入內部之後，被抽吸到排氣口15的空氣等)之流量。另一方面，也可以藉由或是將排氣口15之與處理空間13接續的開口部閉塞，或是將構成排氣口15的部位自本體部5a拆卸、將與空間16連通的孔閉塞，而省略排氣口15。 　　[0032] 在此，相較於各供氣口14朝處理空間13供氣的處理氣體4流量，各排氣口15從處理空間13排氣之氣體流量是比較多。又，使各排氣口15排氣之氣體流量，每單位時間為一定。此外，關於沿著搬送方向的距離，比起上游側端部的排氣口15與最上游側的供氣口14之相互間距離D1，下游側端部的排氣口15與最下游側的供氣口14之相互間距離D2較長。相互間距離D2的長度，為相互間距離D1的長度的1.2倍以上佳，1.5倍以上較佳，為2倍以上最佳。 　　[0033] 如圖2所示，供氣口14及排氣口15兩者，被形成沿寬度方向呈長條狀的狹縫狀。供氣口14之寬度尺寸，如同圖所示，可以作成比玻璃基板2的全幅稍微短，抑或與同圖不同，作成比玻璃基板2的全幅稍微長。另一方面，使排氣口15的寬度尺寸，比玻璃基板2的全幅稍微長。於此，為了作成容易沿著寬度方向均等地供給處理氣體4，供氣口14沿著搬送方向的開口長度S1最好是作成0.5mm～5mm之範圍內。又，排氣口15沿著搬送方向的開口長度，係比供氣口14沿著搬送方向的開口長度S1還長。再者，為了迴避因排氣口15形成的氣體抽吸妨礙圓滑的蝕刻處理的實行，從本體部5a的上游側端緣5aa到上游側端部的排氣口15為止之距離L4、與從下游側端緣5ab到下游側端部的排氣口15為止之距離L4，最好是共通並作成1mm～20mm之範圍內。 　　[0034] 如圖1所示，本體部5a中與處理空間13通過中的玻璃基板2的下表面2a對向之頂部，係由沿著搬送方向沒有間隙地並排的複數個單元(於本實施型態作成八個，包含後述的供氣單元18與連接單元19)構成。該等複數個單元，構成本體部5a的頂部，且構成上述的空間16的室頂部。 　　[0035] 在複數個單元之中，包含形成供氣口14的供氣單元18、與非形成供氣口14的連接單元19(於圖2，分別以粗線包圍供氣單元18與連接單元19)。於本實施型態，複數個單元並排中，供氣單元18係並排在從搬送方向的上游側起第二個、第四個、及第六個位置。另一方面，連接單元19係並排在從搬送方向的上游側起第一個、第三個、第五個、第七個、及第八個位置。供氣單元18，係具備與供氣口14連結的供氣噴嘴18a，該供氣噴嘴18a，係與配置在腔室8外的處理氣體4的生成器(generator)(省略圖示)連接。連接單元19，係連接相鄰的供氣單元18相互間、及供氣單元18與排氣口15之間。 　　[0036] 於此，在從搬送方向的上游側起第一個位置(最上游側的位置)之連接單元19(19x)，被配置固定於該位置。另一方面，在從上游側起第三個、第五個、第七個、及第八個位置之連接單元19，可以置換成供氣單元18、或者取代供氣口14而置換成被形成排氣口20a的後述的排氣單元20(於圖1，未使用排氣單元20)。此外，關於在從上游側起第二個、第四個、及第六個位置之供氣單元18，也可以置換成連接單元19、或者後述的排氣單元20。藉此，可以在供氣口14的數目、或變更搬送方向之供氣口14的位置添加變更。再者，假設在配置排氣單元20之場合，也可以從上游側端部及下游側端部之兩排氣口15, 15以外進行處理氣體4排氣。以下，關於該等單元的置換，參照圖3a～圖3d加以說明。 　　[0037] 於圖3a～圖3c各圖，用粗線包圍顯示的供氣單元18、連接單元19、及排氣單元20，其沿著搬送方向的長度作成相互相等。藉此，在進行置換該等單元之場合，可以使隨置換而新配置的單元，與鄰接此的兩單元(於圖3a～圖3c各圖，圖示所鄰接的兩單元都是連接單元19之場合)沒有間隙地並排。再者，新配置的單元，可以在與所鄰接的兩單元上下方向沒有階差地並排。 　　[0038] 於此，如圖3a所示，供氣單元18之供氣口14的周邊領域14a，比起其他領域，係在上下方向位置於高位。藉此，於供氣口14的周邊領域14a，相比於其他領域，可以使之與通過處理空間13中的玻璃基板2的下表面2a之離間距離較短。在本實施型態，供氣口14的周邊領域14a之與玻璃基板2下表面2a之離間距離，比起其他領域之與玻璃基板2下表面2a之離間距離呈一半的距離。於是，就離間距離縮短之部分，形成供氣口14的先端(處理氣體4的流出口)呈接近玻璃基板2下表面2a之狀態。此外，如圖3c所示，假設在配置排氣單元20之場合，則成為在該排氣單元20被形成的排氣口20a與上述的空間16連通之狀態。藉此，通過排氣口20a而從處理空氣13被送入空間16的處理氣體4，之後，係通過排氣管17而從空間16朝洗淨集塵裝置被排氣。又，排氣口20a，與上游側端部的排氣口15及下游側端部的排氣口15同樣地，被形成沿寬度方向呈長條狀的狹縫狀。於此，如圖3d所示，供氣單元18之供氣口14的周邊領域14a之高度，也可以作成與其他領域相同。 　　[0039] 如圖1所示，頂板部5b係由單一的板體(俯視下為矩形狀的板體)構成，具有與處理空間13通過中的玻璃基板2的上表面2b對向之平坦面。此外，頂板部5b，係內藏供防止因處理氣體4造成的結露用之加熱器等加熱手段(省略圖示)。H鋼5c，係於頂板部5b上在寬度方向延伸設置。再者，H鋼5c係設置複數個(於本實施型態為三個)，該等複數個H鋼5c係於搬送方向等間隔地配置。 　　[0040] 沖洗氣體噴射噴嘴7，係配置於搬送方向之與處理器5相比更靠上游側，且在與玻璃基板2的搬送路徑相比更靠上方。該沖洗氣體噴射噴嘴7，係可以在玻璃基板2的進入處理空間13的部位與頂板部5b之間被形成的間隙13a，以形成沖洗氣體6沿著搬送方向流動之方式、向搬送方向的下游側噴射沖洗氣體6。沖洗氣體6的流動，係可以形成跨間隙13a的全幅。再者，沖洗氣體6，比起利用搬送手段3形成的玻璃基板2的搬送速度，沿著搬送方向被噴射的流速比較快。藉此，將欲流入間隙13a的處理氣體4、藉沖洗氣體6的壓力而趕到搬送方向的下游側，可以阻止往間隙13a的流入。於是，迴避玻璃基板2上表面2b的粗糙化。又，在本實施型態，使用壓縮乾燥空氣(CDA)作為沖洗氣體6。 　　[0041] 如圖4a所示，沖洗氣體6，係於搬送中的玻璃基板2的先頭部2f即將進入處理空間13之前開始噴射。再者，如圖4b所示，沖洗氣體6，係於搬送中的玻璃基板2的最後部2e即將進入處理空間13之前停止噴射。於此，於本實施型態，係以下述方式決定進行沖洗氣體6噴射的開始或停止之時機。首先，在沿搬送方向之與沖洗氣體噴射噴嘴7相比更靠上游側，配置可以檢知玻璃基板2的先頭部2f或最後部2e通過之感應裝置等檢知手段(省略圖示)。在該檢知手段檢知玻璃基板2的先頭部2f通過時，根據玻璃基板2的搬送速度、與沿著從先頭部2f起到處理空間13的搬送路徑之距離，而決定開始沖洗氣體6噴射之時機。同樣地，在檢知手段檢知最後部2e通過時，根據搬送速度、與從最後部2e起到處理空間13之距離，而決定停止噴射之時機。 　　[0042] 如圖5所示，沖洗氣體噴射噴嘴7，係具備在寬度方向延伸的圓筒狀管材7a。在寬度方向空出間隔將複數個軟管7b對著該管材7a***。由各軟管7b可以對管材7a內供給沖洗氣體6。此外，在管材7a內部，安裝沿寬度方向呈長條狀的板體7c，使從各軟管7b流入管材7a內之沖洗氣體6，形成在以迂迴之方式環繞板體7c之後，從與管材7a連結的噴射部7d噴射。在噴射部7d被形成之沖洗氣體6的噴射口，係形成沿寬度方向呈長條狀的狹縫狀。依噴射部7d所形成的沖洗氣體6的噴射角度θ(噴射部7d對玻璃基板2上表面2b的指向方向所傾斜之角度)，可以於25°～70°的範圍內變更。此外，沖洗氣體噴射噴嘴7的姿勢，如圖5實線所示，或可以調節使噴射部7d指向處理空間13內，或如同圖虛線所示，調節使噴射部7d指向處理空間13外。 　　[0043] 如圖1所示，腔室8係作成直方體狀的外形。該腔室8，除了上述的搬入口8aa及搬出口8ab，還具備形成室頂孔8ac的本體8a、與供塞住室頂孔8ac用的蓋體8b。 　　[0044] 搬入口8aa及搬出口8ab，係在本體8a的側壁部8ad被形成，且形成為沿著寬度方向呈長條狀的扁平的開口。室頂孔8ac，係在本體8a的室頂部8ae形成複數個(於本實施型態為三個)。蓋體8b，係可以塞住室頂孔8ac的開口全體，且可以往本體8a安裝、及自本體8a拆卸。藉此，可以藉由將蓋體8b自本體8a拆卸而開放室頂孔8ac，而介著該室頂孔8ac進行處理器5的調節、保養、檢查等作業。 　　[0045] 第一虛設處理器10，係具備配置在玻璃基板2的搬送路徑的下方之直方體狀的箱體10a、配置在搬送路徑的上方成與箱體10a相對向之頂板10b、與作為供防止因頂板10b的自重造成的撓曲用之補強構件之H鋼10c。在箱體10a與頂板10b之相互間，形成供使玻璃基板2通過用之間隙21。第一虛設處理器10，係作為供迴避從搬出口8ab流入腔室8內之氣流到達處理空間13，對蝕刻處理帶來不良影響用之防風構件功能。於此，為了有效地作為防風構件之功能，沿著搬送方向之第一虛設處理器10的長度，為50mm以上佳，為100mm以上更佳。 　　[0046] 在箱體10a的上端，形成沿寬度方向呈長條狀的矩形狀的開口10aa。另一方面，在箱體10a的底部，係與被接續在腔室8外配置的洗淨集塵裝置(省略圖示)之排氣管22連通。藉此，第一虛設處理器10，關於被玻璃基板2下表面2a拖曳而從處理空間13內朝搬送方向下游側流出之處理氣體4，可以將該處理氣體4在通過開口10aa由排氣管22抽吸之後，朝洗淨集塵裝置排氣。頂板10b係作成單一的板體(俯視下為矩形狀的板體)，具有與間隙21通過中的玻璃基板2上表面2b對向之平坦面。H鋼10c，係於頂板10b上在寬度方向延伸設置。 　　[0047] 第一虛設處理器10，從沿著搬送方向的方向來看之場合，具有與處理器5相同的外形，且配置成看起來與處理器5重疊。換言之，於處理器5的本體部5a與第一虛設處理器10的箱體10a之相互間，可作成寬度尺寸、及沿著上下方向的尺寸為相同。同樣地，(A)處理器5的頂板部5b與第一虛設處理器10的頂板10b、(B)處理器5的H鋼5c與第一虛設處理器10的H鋼10c、(C)處理器5的處理空間13與第一虛設處理器10的間隙21，於該等(A)～(C)各組合之相互間，寬度尺寸、及沿著上下方向的尺寸都作成相同。 　　[0048] 第二虛設處理器11，除了下述所示之(1)，(2)二點，係具備與上述第一虛設處理器10相同的構成。因而，藉由對第二虛設處理器11也附上與在圖1對第一虛設處理器10附上的相同圖號，省略於兩處理器10, 11之間重複說明。(1)配置與第一虛設處理器10不同之點。(2)作為供迴避從搬入口8aa，而非從搬出口8ab，流入腔室8內之氣流到達處理空間13，對蝕刻處理帶來不良影響用之防風構件功能之點。又，第二虛設處理器11，與第一虛設處理器10同樣地，從沿著搬送方向的方向來看之場合，具有與處理器5相同的外形，且配置成看起來與處理器5重疊。 　　[0049] 抽吸噴嘴12，係安裝在腔室8的室頂部8ae，其抽吸口12a與空間9連通。該抽吸口12a，係配置在沿搬送方向之與第一虛設處理器10相比更靠下游側，且配置在空間9之搬送方向的下游側端部。抽吸噴嘴12，係與配置在腔室8外的洗淨集塵裝置(省略圖示)連接，可以將抽吸的生成物朝洗淨集塵裝置排出。又，抽吸口12a，並不以與本實施型態同樣的配置為限，只要是配置在比玻璃基板2的搬送路徑更靠上方即可。然而，因為具有將在蝕刻處理所發生的生成物抽吸並朝腔室8外排出之作用，所以，抽吸口12a，即使在作成與本實施型態不同的配置之場合，也最好配置在沿搬送方向之比處理器5更靠下游側。 　　[0050] 以下，說明關於使用上述之玻璃基板之製造裝置1之本發明實施型態之玻璃基板之製造方法。 　　[0051] 首先，藉由利用搬送手段3搬送玻璃基板2，從搬入口8aa朝腔室8內搬入玻璃基板2。又，在本實施型態，以沿著從搬入口8aa起到搬出口8ab的搬送路徑之距離作為基準，將沿著搬送路徑的全長比該距離更長的玻璃基板2當作蝕刻處理的對象。此外，在本實施型態，以固定的搬送速度搬送玻璃基板2。 　　[0052] 其次，使搬入後的玻璃基板2，通過配置在搬入口8aa與處理器5之間的第二虛設處理器11的間隙21。又，從搬入口8aa流入腔室8內、沿著玻璃基板2下表面2a朝搬送方向下游側流去的氣體，係由連通到第二虛設處理器11的箱體10a底部之排氣管22抽吸。除此之外，藉由使第二虛設處理器11作為防風構件的功能，防止從搬入口8aa流入腔室8內之氣體到達處理器5的處理空間13。 　　[0053] 其次，使第二虛設處理器11的間隙21通過後的玻璃基板2、通過處理器5的處理空間13。此時，自玻璃基板2的先頭部2f即將進入處理空間13之前開始噴射沖洗氣體6。於是，在處理空間13通過中的玻璃基板2的下表面2a側，邊利用各供氣口14供給的處理氣體4對下表面2a實施蝕刻處理，邊利用上游側端部及下游側端部的各個排氣口15將處理氣體4從處理空間13排氣。另一方面，在處理空間13通過中的玻璃基板2的上表面2b側，利用在間隙13a形成的沖洗氣體6的流動，防止由處理氣體4對上表面2b造成的蝕刻處理。此外，於蝕刻處理發生的生成物是由抽吸噴嘴12抽吸，朝腔室8外排出。沖洗氣體6，係於玻璃基板2的最後部2e即將進入處理空間13之前停止噴射。 　　[0054] 於此，在本實施型態，作成在玻璃基板2的最後部2e即將進入處理空間13之前停止噴射沖洗氣體6之態樣，但並不以此為限。如果是玻璃基板2的先頭部2f從處理空間13脫出之後，則作成在與玻璃基板2的最後部2e即將進入處理空間13之前相比更早前就停止噴射沖洗氣體6之態樣亦可。 　　[0055] 其次，使通過處理器5的處理空間13之蝕刻處理後之玻璃基板2、通過配置在處理器5與搬出口8ab之間之第一虛設處理器10的間隙21。又，從搬出口8ab流入腔室8內、沿著玻璃基板2下表面2a朝搬送方向上游側流去的氣體，係由連通到第一虛設處理器10的箱體10a底部之排氣管22抽吸。再者，藉由使第一虛設處理器10作為防風構件的功能，防止從搬出口8ab流入腔室8內之氣體到達處理器5的處理空間13。此外，利用排氣管22，抽吸被玻璃基板2下表面2a拖曳而從處理空間13內朝搬送方向下游側流出之處理氣體4、朝腔室8外排氣。 　　[0056] 最後，將第一虛設處理器10的間隙21通過後之玻璃基板2、從搬出口8ab朝腔室8外搬出。於是，得到已對下表面2a實施蝕刻處理的玻璃基板2。依照上述，關於本發明實施型態的玻璃基板之製造方法完畢。 　　[0057] 以下，說明根據關於本發明實施型態之玻璃基板之製造方法之主要作用･效果。 　　[0058] 於此方法，從在腔室8內之與玻璃基板2的搬送路徑相比更靠上方側配置之抽吸口12a、將於蝕刻處理所發生的生成物朝腔室8外排出。因此，可以將有在玻璃基板2上表面2b形成異物並附著之疑慮之生成物從腔室8內排除。結果，可以迴避在玻璃基板2上表面2b的異物附著，可以防止玻璃基板2之品質降低。 　　[0059] 於此，關於本發明之玻璃基板之製造方法，並不以在上述實施型態已說明的態樣為限。例如，關於處理器之構成，也可以是不同於上述實施形態所用之處理器。於上述實施形態所用之處理器，係作成在上游側端部的排氣口與下游側端部的排氣口之間配置複數個供氣口之構成，但並不以此為限，也可以是在兩排氣口之間僅配置唯一一個供氣口(例如，配置在兩排氣口的中間位置)之構成。[0023] Hereinafter, the manufacturing method of the glass substrate of the embodiment of the present invention will be described with reference to the accompanying drawings. First, the manufacturing apparatus of the glass substrate used in the manufacturing method of a glass substrate is demonstrated.　　[0024] Here, in the following description, the conveying direction of the glass substrate (the direction from right to left in FIG. 1) is marked as the "conveying direction". In addition, the width direction of the glass substrate orthogonal to the conveying direction (the direction perpendicular to the paper surface in Figure 1) is marked as "width direction", and the length along the "width direction" is marked as "full width" or " Width size". In addition, the vertical direction facing the upper and lower surfaces of the glass substrate is referred to as the "up and down direction". [0025] As shown in FIG. 1, a glass substrate manufacturing apparatus 1 is provided as a main constituent element: a conveying means 3 for horizontally conveying a glass substrate 2 in a flat position, for facing the glass substrate 2 being conveyed The lower surface 2a of the glass substrate 2 uses a processing gas 4 (hydrogen fluoride in this embodiment) to perform an etching process with a processor 5, and a rinse gas jet nozzle 7 for spraying a rinse gas 6 for preventing the upper surface 2b of the glass substrate 2 from being etched. , A chamber 8 for preventing the processing gas 4 from leaking to the outside from the space 9 formed inside the glass substrate 2 is provided with the import port 8aa and the export port 8ab of the glass substrate 2 and is arranged on the conveyance path of the glass substrate 2 The first dummy processor 10 between the processor 5 and the export port 8ab, and the second dummy processor 11 arranged between the processor 5 and the import port 8aa, and the lower part for the processing gas 4 and the glass substrate 2 The product generated by the reaction on the surface 2a is sucked and discharged from the suction nozzle 12 to the outside of the chamber 8.　　[0026] The conveying means 3 is composed of a plurality of rollers 3a arranged on the conveying path of the glass substrate 2. With the plurality of rollers 3a, the glass substrate 2 can be conveyed along a conveying path extending in a straight line. Between the rollers 3a adjacent to each other in the conveying direction, the entire width of the lower surface 2a of the glass substrate 2 is exposed. By reacting the exposed lower surface 2a with the processing gas 4, an etching process is performed and the entire width of the lower surface 2a is roughened. In addition, as the conveying means 3, something other than a plurality of rollers 3a may be used, and other materials may be used as long as the whole width of the lower surface 2a of the glass substrate 2 can be exposed during conveyance. [0027] The processor 5 is provided with a main body portion 5a as a lower structure, a top board portion 5b as an upper structure body, and a top board portion 5b as a preventive factor, which sandwiches and opposes the conveying path of the glass substrate 2 up and down H steel 5c is used as a reinforcing member for the deflection caused by its own weight. Between the main body part 5a and the top plate part 5b, a processing space 13 for performing an etching process on the glass substrate 2 passing therethrough is formed. The processing space 13 is formed as a flat space. The width dimension W1 (refer to FIG. 2) of the processing space 13 and the thickness dimension T1 along the vertical direction are respectively larger than the entire width W2 (refer to FIG. 2) of the glass substrate 2 and the thickness T2 of the glass substrate 2. [0028] Here, when the glass substrate 2 enters the inside from outside the processing space 13, in order to prevent the air and other gases accompanying this and existing around the glass substrate 2 from flowing into the processing space 13, the processing space along the conveying direction The length dimension L1 of 13 is preferably in the range of 300 mm to 2000 mm, and more preferably in the range of 600 mm to 1000 mm. In addition, from the viewpoint of properly injecting the flushing gas 6, the above-mentioned length dimension L1 is preferably different from the aspect of this embodiment, and is preferably longer than the length along the conveying direction of the glass substrate 2. In addition, the thickness dimension T1 of the processing space 13 is preferably made in the range of 4 mm to 30 mm. Furthermore, the ratio of the aforementioned length dimension L1 to the thickness dimension T1 (length dimension L1/thickness dimension T1) is preferably set in the range of 10 to 250.　　[0029] The main body 5a has a rectangular parallelepiped shape. The main body 5a is provided with a gas supply port 14 for injecting and supplying the processing gas 4 to the processing space 13, an exhaust port 15 for sucking and exhausting the processing gas 4 from the processing space 13, and a heating valve The processing gas 4 supplied to the processing space 13 and heating means (not shown) such as a heater for preventing condensation caused by the processing gas 4. The exhaust ports 15 are respectively arranged at the upstream end and the downstream end in the conveying direction of the main body 5a. On the other hand, the air supply ports 14 are arranged in plural (three in this embodiment) between the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end along the conveying direction. . [0030] The gas supply port 14 on the most downstream side in the conveying direction of the plurality of gas supply ports 14 has the largest flow rate of the processing gas 4 that supplies gas to the processing space 13. In this embodiment, compared to the others The gas supply port 14 supplies processing gas 4 at twice the flow rate. On the other hand, among the plurality of gas supply ports 14, the concentration of the supplied processing gas 4 is made the same. Each air supply port 14 is connected to the processing space 13 between the rollers 3a adjacent to each other along the conveying direction. In addition, the flow rate of the processing gas 4 supplied from each gas supply port 14 is each constant per unit time. Here, regarding the distance along the conveying direction, the distance L2 from the air supply port 14 on the most upstream side to the air supply port 14 in the center is set to be the same as that from the air supply port 14 in the center to the air supply port 14 on the most downstream side. The distance L3 is equal to each other. Furthermore, in this embodiment, three air supply ports 14 are configured, but it is not limited to this, and two or more than four may be configured.　　[0031] Each of the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end can send the processing gas 4 sucked from the processing space 13 into the space 16 formed inside the main body portion 5a. The space 16 is connected to an exhaust pipe 17 of a cleaning dust collecting device (not shown) arranged outside the chamber 8. Thereby, the processing gas 4 sent from the processing air 13 into the space 16 through the exhaust port 15 is then exhausted from the space 16 toward the cleaning dust collector through the exhaust pipe 17. In addition, the exhaust pipe 17 is connected to the downstream end of the space 16 in the conveying direction. The exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end can also be provided with a mechanism to individually adjust the exhaust gas ("gas", not only the processing gas 4, but also included in the processing space After the outside 13 is drawn into the inside, it is sucked into the exhaust port 15). On the other hand, it is also possible to close the opening of the exhaust port 15 which is connected to the processing space 13, or to remove the part constituting the exhaust port 15 from the main body 5a, and to close the hole communicating with the space 16. , And the exhaust port 15 is omitted.　　[0032] Here, compared to the flow rate of the processing gas 4 supplied to the processing space 13 by each gas supply port 14, the gas flow rate of each exhaust port 15 exhausting from the processing space 13 is relatively large. In addition, the gas flow rate for exhausting each exhaust port 15 is constant per unit time. In addition, with regard to the distance along the conveying direction, compared to the distance D1 between the exhaust port 15 at the upstream end and the air supply port 14 on the most upstream side, the exhaust port 15 at the downstream end and the most downstream distance D1 The distance D2 between the air supply ports 14 is relatively long. The length of the mutual distance D2 is preferably 1.2 times or more the length of the mutual distance D1, preferably 1.5 times or more, and most preferably 2 times or more.　　[0033] As shown in FIG. 2, both the air supply port 14 and the exhaust port 15 are formed in a slit shape elongated in the width direction. The width dimension of the air supply port 14 can be made slightly shorter than the full width of the glass substrate 2 as shown in the figure, or it can be made slightly longer than the full width of the glass substrate 2 differently from the same figure. On the other hand, the width dimension of the exhaust port 15 is slightly longer than the entire width of the glass substrate 2. Here, in order to make it easy to supply the processing gas 4 uniformly along the width direction, the opening length S1 of the gas supply port 14 along the conveying direction is preferably made in the range of 0.5 mm to 5 mm. In addition, the opening length of the exhaust port 15 along the conveying direction is longer than the opening length S1 of the air supply port 14 along the conveying direction. Furthermore, in order to avoid that the gas suction formed by the exhaust port 15 hinders the execution of the smooth etching process, the distance L4 from the upstream end edge 5aa of the main body 5a to the exhaust port 15 at the upstream end is compared with The distance L4 from the downstream end edge 5ab to the exhaust port 15 at the downstream end is preferably common and should be in the range of 1 mm to 20 mm. [0034] As shown in FIG. 1, the top portion of the main body portion 5a opposite to the lower surface 2a of the glass substrate 2 passing through the processing space 13 is composed of a plurality of units arranged side by side without gaps along the conveying direction (in this embodiment) There are eight types, including the air supply unit 18 and the connecting unit 19) which will be described later. These plural units constitute the top of the main body portion 5a and constitute the ceiling of the aforementioned space 16. [0035] Among the plurality of units, the air supply unit 18 that forms the air supply port 14 and the connection unit 19 that forms the air supply port 14 are included (in FIG. 2, the air supply unit 18 and the connection unit are surrounded by thick lines, respectively). 19). In the present embodiment, in a plurality of units side-by-side, the air supply unit 18 is side-by-side at the second, fourth, and sixth positions from the upstream side in the conveying direction. On the other hand, the connecting unit 19 is arranged side by side at the first, third, fifth, seventh, and eighth positions from the upstream side in the conveying direction. The gas supply unit 18 is provided with a gas supply nozzle 18 a connected to the gas supply port 14, and the gas supply nozzle 18 a is connected to a generator (not shown) of the processing gas 4 arranged outside the chamber 8. The connecting unit 19 connects the adjacent air supply units 18 and between the air supply unit 18 and the exhaust port 15.　　[0036] Here, the connection unit 19 (19x) at the first position (the position on the most upstream side) from the upstream side in the conveying direction is arranged and fixed at this position. On the other hand, the connection unit 19 at the third, fifth, seventh, and eighth positions from the upstream side can be replaced with the air supply unit 18, or the air supply port 14 can be replaced by being formed The exhaust unit 20 described later of the exhaust port 20a (in FIG. 1, the exhaust unit 20 is not used). In addition, the air supply unit 18 at the second, fourth, and sixth positions from the upstream side may be replaced with a connection unit 19 or an exhaust unit 20 described later. Thereby, it is possible to add and change the number of the air supply ports 14 or the position of the air supply ports 14 for changing the conveying direction. Furthermore, assuming that the exhaust unit 20 is arranged, the process gas 4 may be exhausted from the exhaust ports 15 and 15 at the upstream end and the downstream end. Hereinafter, the replacement of these units will be described with reference to FIGS. 3a to 3d.　　 [0037] In each of FIGS. 3a to 3c, the air supply unit 18, the connection unit 19, and the exhaust unit 20 shown are surrounded by thick lines, and their lengths along the conveying direction are made equal to each other. In this way, in the case of replacing these units, the unit newly arranged with the replacement can be connected to the two adjacent units (in each of Figures 3a to 3c, the two adjacent units shown in the figure are both connecting units. 19 In case), they are arranged side by side without gaps. Furthermore, the newly arranged units can be arranged side by side with no difference in the vertical direction from the two adjacent units.　　[0038] Here, as shown in FIG. 3a, the peripheral area 14a of the air supply port 14 of the air supply unit 18 is higher in the up and down direction than other areas. Thereby, in the peripheral area 14a of the air supply port 14, the distance from the lower surface 2a of the glass substrate 2 passing through the processing space 13 can be made shorter compared to other areas. In this embodiment, the distance between the peripheral area 14a of the air supply port 14 and the lower surface 2a of the glass substrate 2 is half the distance from the lower surface 2a of the glass substrate 2 in other areas. Then, at the portion where the separation distance is shortened, the tip of the gas supply port 14 (the outflow port of the processing gas 4) is in a state close to the lower surface 2a of the glass substrate 2. In addition, as shown in FIG. 3c, assuming that the exhaust unit 20 is arranged, the exhaust port 20a formed in the exhaust unit 20 is in a state in which the above-mentioned space 16 communicates with each other. Thereby, the processing gas 4 sent from the processing air 13 into the space 16 through the exhaust port 20a is then exhausted from the space 16 toward the cleaning dust collector through the exhaust pipe 17. In addition, the exhaust port 20a is formed in a slit shape elongated in the width direction similarly to the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end. Here, as shown in FIG. 3d, the height of the peripheral area 14a of the air supply port 14 of the air supply unit 18 can also be made the same as other areas. [0039] As shown in FIG. 1, the top plate portion 5b is composed of a single plate body (a rectangular plate body in plan view), and has a flat surface facing the upper surface 2b of the glass substrate 2 passing through the processing space 13. . In addition, the top plate portion 5b is a built-in heating means (illustration omitted) such as a heater for preventing condensation caused by the processing gas 4. The H steel 5c is attached to the top plate part 5b to extend in the width direction. Furthermore, there are a plurality of H steel 5c (three in this embodiment), and the plural H steel 5c are arranged at equal intervals in the conveying direction.　　[0040] The flushing gas injection nozzle 7 is arranged on the upstream side of the processor 5 in the conveying direction and higher than the conveying path of the glass substrate 2. The flushing gas jet nozzle 7 is a gap 13a that can be formed between the portion of the glass substrate 2 that enters the processing space 13 and the top plate portion 5b to form a manner in which the flushing gas 6 flows along the conveying direction, downstream of the conveying direction Side spray flushing gas 6. The flow of the flushing gas 6 can form a full width across the gap 13a. In addition, the flow velocity of the flushing gas 6 injected along the conveying direction is relatively faster than the conveying speed of the glass substrate 2 formed by the conveying means 3. Thereby, the processing gas 4 that is about to flow into the gap 13a is driven to the downstream side in the conveying direction by the pressure of the flushing gas 6, and the inflow into the gap 13a can be prevented. Therefore, the roughening of the upper surface 2b of the glass substrate 2 is avoided. Moreover, in this embodiment, compressed dry air (CDA) is used as the flushing gas 6.　　[0041] As shown in FIG. 4a, the flushing gas 6 is attached to the leading head 2f of the glass substrate 2 that is being transported and starts to spray immediately before entering the processing space 13. Furthermore, as shown in FIG. 4b, the flushing gas 6 is tied to the last part 2e of the glass substrate 2 being transported and stops jetting immediately before entering the processing space 13. Here, in the present embodiment, the timing of the start or stop of the flushing gas 6 injection is determined in the following manner. First, on the upstream side of the flushing gas injection nozzle 7 in the conveying direction, detection means (not shown) such as an induction device capable of detecting the passage of the leading portion 2f or the trailing portion 2e of the glass substrate 2 are arranged. When the detection means detects that the leading head 2f of the glass substrate 2 passes, it is determined to start the flushing gas 6 injection based on the transport speed of the glass substrate 2 and the distance along the transport path from the leading head 2f to the processing space 13 The timing. Similarly, when the detecting means detects that the last part 2e has passed, the timing to stop spraying is determined based on the conveying speed and the distance from the last part 2e to the processing space 13.　　[0042] As shown in FIG. 5, the flushing gas injection nozzle 7 is provided with a cylindrical pipe 7a extending in the width direction. A plurality of hoses 7b are inserted into the pipe 7a at intervals in the width direction. Each hose 7b can supply flushing gas 6 into the pipe 7a. In addition, inside the pipe 7a, an elongated plate 7c in the width direction is installed, so that the flushing gas 6 flowing from each hose 7b into the pipe 7a is formed after the plate 7c in a circuitous manner, from and the pipe 7c The ejection portion 7d connected to 7a ejects. The injection port of the flushing gas 6 formed in the injection portion 7d is formed in a slit shape elongated in the width direction. The spraying angle θ of the flushing gas 6 formed by the spraying portion 7d (the angle at which the spraying portion 7d is inclined with respect to the pointing direction of the upper surface 2b of the glass substrate 2) can be changed within the range of 25° to 70°. In addition, the posture of the flushing gas injection nozzle 7 is shown as the solid line in FIG. 5, or it can be adjusted so that the injection portion 7d points into the processing space 13, or as shown by the broken line in the figure, the injection portion 7d can be adjusted so that the injection portion 7d points out of the processing space 13.　　[0043] As shown in Fig. 1, the chamber 8 has a rectangular parallelepiped shape. In addition to the aforementioned carry-in port 8aa and carry-out port 8ab, the chamber 8 also includes a main body 8a that forms a ceiling hole 8ac, and a lid body 8b for plugging the ceiling hole 8ac.　　[0044] The import port 8aa and the export port 8ab are formed on the side wall portion 8ad of the main body 8a, and are formed as elongated flat openings along the width direction. There are a plurality of chamber top holes 8ac (three in this embodiment) formed on the chamber top 8ae of the main body 8a. The cover 8b can plug the entire opening of the ceiling hole 8ac, and can be attached to and detached from the main body 8a. Thereby, by removing the cover 8b from the main body 8a, the ceiling hole 8ac can be opened, and the adjustment, maintenance, and inspection of the processor 5 can be performed through the ceiling hole 8ac. [0045] The first dummy processor 10 is provided with a rectangular box body 10a arranged below the conveying path of the glass substrate 2, a top plate 10b arranged above the conveying path so as to face the box 10a, and H steel 10c is a reinforcing member for preventing deflection caused by the weight of the top plate 10b. Between the box body 10a and the top plate 10b, a gap 21 for the glass substrate 2 to pass through is formed. The first dummy processor 10 functions as a windproof member for avoiding the airflow flowing from the export port 8ab into the chamber 8 to the processing space 13 and adversely affecting the etching process. Here, in order to effectively function as a windproof member, the length of the first dummy processor 10 along the conveying direction is preferably 50 mm or more, and more preferably 100 mm or more.　　[0046] At the upper end of the box body 10a, a rectangular opening 10aa that is elongated in the width direction is formed. On the other hand, at the bottom of the box body 10a, the exhaust pipe 22 of a cleaning dust collecting device (not shown) arranged outside the chamber 8 is connected to it. Thereby, the first dummy processor 10 can be dragged by the lower surface 2a of the glass substrate 2 and flow out from the processing space 13 toward the downstream side in the conveying direction. The processing gas 4 can be discharged from the exhaust pipe through the opening 10aa. 22 After suction, exhaust air to the cleaning dust collector. The top plate 10b is made as a single plate (a rectangular plate in plan view), and has a flat surface facing the upper surface 2b of the glass substrate 2 through which the gap 21 passes. The H steel 10c is tied to the top plate 10b and extends in the width direction.　　[0047] The first dummy processor 10 has the same external shape as the processor 5 when viewed from the direction along the conveying direction, and is arranged so as to overlap with the processor 5. In other words, between the main body portion 5a of the processor 5 and the box body 10a of the first dummy processor 10, the width dimension and the dimension along the vertical direction can be made the same. Similarly, (A) the top plate portion 5b of the processor 5 and the top plate 10b of the first dummy processor 10, (B) the H steel 5c of the processor 5 and the H steel 10c of the first dummy processor 10, (C) processing The processing space 13 of the device 5 and the gap 21 of the first dummy processor 10 are made the same in the width dimension and the dimension along the vertical direction between the combinations (A) to (C).　　[0048] The second dummy processor 11 has the same configuration as the first dummy processor 10, except for the following two points (1) and (2). Therefore, by attaching the same figure number to the second dummy processor 11 as that attached to the first dummy processor 10 in FIG. 1, the repeated description between the two processors 10 and 11 is omitted. (1) The configuration is different from the first dummy processor 10. (2) It serves as a point for avoiding the function of a windproof member for avoiding the airflow flowing into the chamber 8 from the carry-in port 8aa instead of the carry-out port 8ab to the processing space 13 and adversely affect the etching process. Also, the second dummy processor 11, like the first dummy processor 10, has the same external shape as the processor 5 when viewed from the direction along the conveying direction, and is arranged so as to overlap the processor 5 .　　[0049] The suction nozzle 12 is installed on the top 8ae of the chamber 8, and the suction port 12a is connected to the space 9. The suction port 12a is arranged on the downstream side of the first dummy processor 10 in the conveying direction, and is arranged at the downstream end of the space 9 in the conveying direction. The suction nozzle 12 is connected to a cleaning dust collecting device (not shown) arranged outside the chamber 8 and can discharge the sucked product to the cleaning dust collecting device. In addition, the suction port 12a is not limited to the same arrangement as in the present embodiment, as long as it is arranged above the conveyance path of the glass substrate 2. However, because it has the function of sucking and expelling the products generated during the etching process to the outside of the chamber 8, the suction port 12a is preferably arranged even if it is arranged differently from this embodiment. On the downstream side of the processor 5 in the conveying direction.　　[0050] Hereinafter, a method of manufacturing a glass substrate of an embodiment of the present invention using the above-mentioned glass substrate manufacturing apparatus 1 will be described.　　[0051] First, by transporting the glass substrate 2 by the transport means 3, the glass substrate 2 is transported into the chamber 8 from the transport port 8aa. In addition, in this embodiment, the distance along the conveyance path from the import port 8aa to the export port 8ab is used as a reference, and the glass substrate 2 whose total length along the conveyance path is longer than this distance is regarded as the target of the etching process. . In addition, in this embodiment, the glass substrate 2 is conveyed at a fixed conveying speed.　　[0052] Next, the imported glass substrate 2 is passed through the gap 21 of the second dummy processor 11 arranged between the import port 8aa and the processor 5. In addition, the gas flowing from the loading port 8aa into the chamber 8 and flowing along the lower surface 2a of the glass substrate 2 toward the downstream side in the conveying direction is connected to the exhaust pipe 22 at the bottom of the box 10a of the second dummy processor 11. Suction. In addition, by using the second dummy processor 11 as a windproof member, the gas flowing into the chamber 8 from the import port 8aa is prevented from reaching the processing space 13 of the processor 5.　　[0053] Next, the glass substrate 2 passed through the gap 21 of the second dummy processor 11 passes through the processing space 13 of the processor 5. At this time, the flushing gas 6 is sprayed from the leading head 2f of the glass substrate 2 immediately before entering the processing space 13. Then, on the lower surface 2a side of the glass substrate 2 through which the processing space 13 passes, the lower surface 2a is etched using the processing gas 4 supplied from each gas supply port 14 and the upstream end and downstream end are used to etch the lower surface 2a. Each exhaust port 15 exhausts the processing gas 4 from the processing space 13. On the other hand, on the upper surface 2b side of the glass substrate 2 through which the processing space 13 passes, the flow of the flushing gas 6 formed in the gap 13a prevents the upper surface 2b from being etched by the processing gas 4. In addition, the product generated during the etching process is sucked by the suction nozzle 12 and discharged to the outside of the chamber 8. The flushing gas 6 is connected to the last part 2e of the glass substrate 2 and stops spraying immediately before entering the processing space 13.　　[0054] Here, in this embodiment, the spraying of the flushing gas 6 is stopped immediately before the last part 2e of the glass substrate 2 enters the processing space 13, but it is not limited to this. If the leading head 2f of the glass substrate 2 comes out of the processing space 13, it can be made to stop spraying the flushing gas 6 earlier than before the last part 2e of the glass substrate 2 enters the processing space 13. .　　[0055] Next, the glass substrate 2 after the etching process passed through the processing space 13 of the processor 5 is passed through the gap 21 of the first dummy processor 10 arranged between the processor 5 and the export port 8ab. In addition, the gas flowing from the outlet 8ab into the chamber 8 along the lower surface 2a of the glass substrate 2 toward the upstream side in the conveying direction is connected to the exhaust pipe 22 at the bottom of the housing 10a of the first dummy processor 10. Suction. Furthermore, by using the function of the first dummy processor 10 as a windproof member, the gas flowing into the chamber 8 from the export port 8ab is prevented from reaching the processing space 13 of the processor 5. In addition, the exhaust pipe 22 sucks and exhausts the processing gas 4 that is dragged by the lower surface 2 a of the glass substrate 2 and flows out from the processing space 13 toward the downstream side in the conveying direction, and is exhausted to the outside of the chamber 8.　　[0056] Finally, the glass substrate 2 after passing through the gap 21 of the first dummy processor 10 is carried out from the export port 8ab to the outside of the chamber 8. As a result, the glass substrate 2 on which the lower surface 2a has been etched is obtained. According to the above, the manufacturing method of the glass substrate of the embodiment of the present invention is completed.　　[0057] Hereinafter, the main functions and effects of the glass substrate manufacturing method according to the embodiment of the present invention will be described.　　[0058] In this method, from the suction port 12a disposed on the upper side of the conveying path of the glass substrate 2 in the chamber 8, the products generated by the etching process are discharged out of the chamber 8. Therefore, it is possible to remove from the chamber 8 products that are suspected of forming foreign substances on the upper surface 2b of the glass substrate 2 and adhering. As a result, the adhesion of foreign matter on the upper surface 2b of the glass substrate 2 can be avoided, and the deterioration of the quality of the glass substrate 2 can be prevented.　　[0059] Herein, the manufacturing method of the glass substrate of the present invention is not limited to the aspects described in the above embodiments. For example, the configuration of the processor may be different from the processor used in the above-mentioned embodiment. The processor used in the above embodiment has a configuration in which a plurality of air supply ports are arranged between the exhaust port at the upstream end and the exhaust port at the downstream end, but it is not limited to this, and may be It is a configuration in which only one air supply port is arranged between the two exhaust ports (for example, arranged in the middle of the two exhaust ports).

[0060]2‧‧‧玻璃基板2a‧‧‧下表面4‧‧‧處理氣體5‧‧‧處理器5a‧‧‧本體部(下部構成體)5b‧‧‧頂板部(上部構成體)8‧‧‧腔室8aa‧‧‧搬入口8ab‧‧‧搬出口10‧‧‧第一虛設處理器11‧‧‧第二虛設處理器12‧‧‧抽吸噴嘴12a‧‧‧抽吸口13‧‧‧處理空間14‧‧‧供氣口[0060] 2. ‧ ‧ glass substrate 2a ‧ ‧ lower surface 4 ‧ ‧ processing gas 5 ‧ ‧ processor 5a ‧ ‧ body part (lower body) 5b ‧ ‧ top plate part (upper body) 8 ‧‧‧Chamber 8aa‧‧‧Inlet 8ab‧‧‧Exit 10 ‧‧‧Processing space 14‧‧‧Air supply port

[0022] 　　圖1係顯示玻璃基板之製造裝置的概略的縱剖側面圖。 　　圖2係從上方來看玻璃基板之製造裝置具備的處理器的本體部之平面圖。 　　圖3a係放大顯示玻璃基板之製造裝置具備的處理器的一部分之縱剖側面圖。 　　圖3b係放大顯示玻璃基板之製造裝置具備的處理器的一部分之縱剖側面圖。 　　圖3c係放大顯示玻璃基板之製造裝置具備的處理器的一部分之縱剖側面圖。 　　圖3d係放大顯示玻璃基板之製造裝置具備的處理器的一部分之縱剖側面圖。 　　圖4a係放大顯示玻璃基板之製造裝置具備的沖洗氣體噴射噴嘴的附近之縱剖側面圖。 　　圖4b係放大顯示玻璃基板之製造裝置具備的沖洗氣體噴射噴嘴的附近之縱剖側面圖。 　　圖5係放大顯示玻璃基板之製造裝置具備的沖洗氣體噴射噴嘴的附近之縱剖側面圖。[0022] 　　 FIG. 1 is a schematic longitudinal sectional side view showing a manufacturing apparatus of a glass substrate.　　 FIG. 2 is a plan view of the main body of the processor included in the glass substrate manufacturing apparatus viewed from above.　　 FIG. 3a is an enlarged longitudinal sectional side view showing a part of the processor included in the manufacturing apparatus of the glass substrate.　　 FIG. 3b is an enlarged longitudinal sectional side view showing a part of the processor included in the manufacturing apparatus of the glass substrate.　　 FIG. 3c is an enlarged longitudinal sectional side view showing a part of the processor included in the manufacturing apparatus of the glass substrate.　　 FIG. 3d is an enlarged longitudinal sectional side view showing a part of the processor included in the manufacturing apparatus of the glass substrate.　　 Fig. 4a is an enlarged longitudinal sectional side view showing the vicinity of the flushing gas injection nozzle provided in the manufacturing apparatus of the glass substrate.　　 FIG. 4b is an enlarged longitudinal sectional side view showing the vicinity of the flushing gas injection nozzle provided in the manufacturing apparatus of the glass substrate.　　 Fig. 5 is an enlarged longitudinal sectional side view showing the vicinity of the flushing gas injection nozzle included in the manufacturing apparatus of the glass substrate.

1‧‧‧玻璃基板之製造裝置 1. ‧ ‧ Glass substrate manufacturing equipment

2‧‧‧玻璃基板 2‧‧‧Glass substrate

2a‧‧‧下表面 2a‧‧‧Lower surface

2b‧‧‧上表面 2b‧‧‧Upper surface

2e‧‧‧最後部 2e‧‧‧The last part

2f‧‧‧先頭部 2f‧‧‧head first

3‧‧‧搬送手段 3‧‧‧Transportation method

3a‧‧‧輥子 3a‧‧‧roller

4‧‧‧處理氣體 4‧‧‧Processing gas

5‧‧‧處理器 5‧‧‧Processor

5a‧‧‧本體部(下部構成體) 5a‧‧‧Main body (lower structure)

5b‧‧‧頂板部(上部構成體) 5b‧‧‧Top plate (upper body)

5c‧‧‧H鋼 5c‧‧‧H steel

6‧‧‧沖洗氣體 6‧‧‧Flushing gas

7‧‧‧沖洗氣體噴射噴嘴 7‧‧‧Flushing gas jet nozzle

8‧‧‧腔室 8‧‧‧ Chamber

8a‧‧‧本體 8a‧‧‧Ontology

8aa‧‧‧搬入口 8aa‧‧‧moving entrance

8ab‧‧‧搬出口 8ab‧‧‧Exit

8ac‧‧‧室頂孔 8ac‧‧‧Room ceiling hole

8ad‧‧‧側壁部 8ad‧‧‧Sidewall

8ae‧‧‧室頂部 8ae‧‧‧Room top

8b‧‧‧蓋體 8b‧‧‧Cover body

9‧‧‧空間 9‧‧‧Space

10‧‧‧第一虛設處理器 10‧‧‧The first dummy processor

10a‧‧‧箱體 10a‧‧‧Box

10aa‧‧‧開口 10aa‧‧‧Open

10b‧‧‧頂板 10b‧‧‧Top plate

10c‧‧‧H鋼 10c‧‧‧H steel

11‧‧‧第二虛設處理器 11‧‧‧Second dummy processor

12‧‧‧抽吸噴嘴 12‧‧‧Suction nozzle

12a‧‧‧抽吸口 12a‧‧‧Suction port

13‧‧‧處理空間 13‧‧‧Processing space

13a‧‧‧間隙 13a‧‧‧Gap

14‧‧‧供氣口 14‧‧‧Air supply port

15‧‧‧排氣口 15‧‧‧Exhaust port

16‧‧‧空間 16‧‧‧Space

17‧‧‧排氣管 17‧‧‧Exhaust pipe

18‧‧‧供氣單元 18‧‧‧Air supply unit

18a‧‧‧供氣噴嘴 18a‧‧‧Air supply nozzle

19(19x)‧‧‧連接單元 19(19x)‧‧‧Connecting unit

21‧‧‧間隙 21‧‧‧Gap

22‧‧‧排氣管 22‧‧‧Exhaust pipe

L1‧‧‧長度尺寸 L1‧‧‧Length dimension

T1‧‧‧厚度尺寸 T1‧‧‧Thickness

T2‧‧‧厚度 T2‧‧‧Thickness

D1、D2、L2、L3‧‧‧距離 D1, D2, L2, L3‧‧‧Distance

Claims (4)

一種玻璃基板之製造方法，一邊將從搬入口搬入腔室內的玻璃基板以平放姿勢沿著搬送路徑搬送，一邊藉由配置於前述搬送路徑上的處理器供給的處理氣體對下表面實施蝕刻處理後，把處理後之前述玻璃基板由搬出口搬出前述腔室外，其特徵為從在前述腔室內之與前述搬送路徑相比更靠上方側且與前述處理器相比更靠前述玻璃基板的搬送方向的下游側所配置的抽吸口，朝該腔室外進行排氣。 A method for manufacturing glass substrates, while the glass substrates carried from the loading port into the chamber are transported in a flat position along the transport path, and the lower surface is etched by the processing gas supplied from the processor arranged on the transport path After that, the processed glass substrate is transported out of the chamber from the export port, and it is characterized in that the glass substrate is transported from inside the chamber to the upper side than the transport path and closer to the glass substrate than the processor. The suction port arranged on the downstream side of the direction exhausts the air out of the chamber. 如申請專利範圍第1項之玻璃基板之製造方法，其中前述處理器，使用具備上下夾著前述搬送路徑而對向的上部構成體與下部構成體，且於前述下部構成體具備對被形成於兩構成體的相互間之處理空間供給前述處理氣體的供氣口之處理器，並且，將第一虛設處理器配置於前述搬送路徑上之前述處理器與前述搬出口之間，該第一虛設處理器具有由前述搬送路徑的下方連到前述腔室外的排氣口，且從沿著搬送方向的方向來看具有與前述處理器同一外形。 For example, the method of manufacturing a glass substrate of the first patent application, wherein the processor is provided with an upper structure and a lower structure facing each other with the conveying path sandwiched between the upper and lower sides, and the lower structure is provided with a pair formed on the lower structure. The processing space between the two structures supplies the processor of the supply port of the processing gas, and the first dummy processor is arranged between the processor on the conveying path and the outlet, the first dummy The processor has an exhaust port connected to the outside of the chamber from below the transport path, and has the same outer shape as the processor when viewed from the direction along the transport direction. 如申請專利範圍第2項之玻璃基板之製造方法，其中在前述玻璃基板的搬送方向之與前述第一虛設處理器相比更靠下游側，從前述抽吸口朝前述腔室外進行排氣。 As for the manufacturing method of the glass substrate of the second patent application, in the conveying direction of the glass substrate, which is more downstream than the first dummy processor, exhaust is performed from the suction port to the outside of the chamber. 如申請專利範圍第2或3項之玻璃基板之製造方法，其中將第二虛設處理器配置於前述搬送路徑上之前述處理器與前述搬入口之間，該第二虛設處理器具有由前述搬送路徑的下方連通至前述腔室外的排氣口，且從沿著搬送方向的方向來看具有與前述處理器同一外形。For example, the manufacturing method of the glass substrate of the 2nd or 3rd item of the scope of patent application, wherein the second dummy processor is arranged between the processor on the conveying path and the conveying port, and the second dummy processor is provided by the conveying The lower part of the path communicates with the exhaust port outside the chamber, and has the same outer shape as the processor when viewed from the direction along the conveying direction.
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