TWI735351B - Cooling pipe assembly, cooling device and plasma processing equipment with function of discharging static electricity - Google Patents
Cooling pipe assembly, cooling device and plasma processing equipment with function of discharging static electricity Download PDFInfo
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- TWI735351B TWI735351B TW109135593A TW109135593A TWI735351B TW I735351 B TWI735351 B TW I735351B TW 109135593 A TW109135593 A TW 109135593A TW 109135593 A TW109135593 A TW 109135593A TW I735351 B TWI735351 B TW I735351B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
本發明涉及一種具有釋放靜電功能的冷卻裝置及冷卻管組件。具有釋放靜電功能的冷卻裝置包括基板、射頻屏蔽板、冷卻管連接器、高電阻冷卻管及金屬冷卻管。基板中設置有冷卻通道。射頻屏蔽板設置在基板的下方。冷卻管連接器設置在射頻屏蔽板中,在射頻屏蔽板的上表面和下表面分別具有冷卻管連接器的第一端和第二端。高電阻冷卻管的一端與基板中的冷卻通道連接,高電阻冷卻管的另一端與冷卻管連接器的第一端連接。金屬冷卻管的一端與冷卻管連接器的第二端連接,金屬冷卻管的另一端接地。本發明透過高電阻冷卻管的高電阻特性避免因靜電電荷而產生電弧現象,另一方面透過冷卻管接地而將靜電電荷導走,從而降低靜電吸盤失效的機率,並提高晶圓移動的安全性。The invention relates to a cooling device and a cooling pipe assembly with the function of discharging static electricity. The cooling device with the function of discharging static electricity includes a substrate, a radio frequency shielding plate, a cooling pipe connector, a high-resistance cooling pipe and a metal cooling pipe. A cooling channel is provided in the substrate. The radio frequency shielding board is arranged under the substrate. The cooling pipe connector is arranged in the radio frequency shielding plate, and the upper surface and the lower surface of the radio frequency shielding plate are respectively provided with a first end and a second end of the cooling pipe connector. One end of the high-resistance cooling pipe is connected with the cooling channel in the base plate, and the other end of the high-resistance cooling pipe is connected with the first end of the cooling pipe connector. One end of the metal cooling pipe is connected to the second end of the cooling pipe connector, and the other end of the metal cooling pipe is grounded. The invention avoids the arc phenomenon caused by electrostatic charge through the high resistance characteristic of the high resistance cooling tube. On the other hand, the cooling tube is grounded to conduct the electrostatic charge away, thereby reducing the probability of failure of the electrostatic chuck and improving the safety of wafer movement .
Description
本發明涉及半導體領域的裝置,特別涉及一種具有釋放靜電功能的冷卻管組件、冷卻裝置和電漿處理設備。The invention relates to a device in the semiconductor field, and in particular to a cooling tube assembly, a cooling device and plasma processing equipment with the function of discharging static electricity.
請參閱圖1,其為用於電漿處理設備的冷卻裝置的示意圖。如圖所示,基板10上為靜電吸盤20 (electrostatic chuck,ESC),靜電吸盤20與基板10統稱為靜電吸盤裝置。靜電吸盤20上承載有基片。電漿蝕刻基片時,會在基片上產生大量熱量,因此,需對基片進行降溫處理。通常來說,會在基板10中設置冷卻通道,透過水或熱傳導液在冷卻通道中的循環流動來冷卻靜電吸盤20,進而達到冷卻基片的目的。Please refer to FIG. 1, which is a schematic diagram of a cooling device for plasma processing equipment. As shown in the figure, there is an electrostatic chuck (ESC) on the
先前技術中透過絕緣橡膠軟管30與基板10中的冷卻通道連接以提供和回收冷卻液體,當液體流經並且刮擦軟管30內壁時,內壁易積累電荷,這些電荷與射頻(RF)桿之間會產生放電現象,從而導致軟管30損壞而漏液。同時,冷卻通道的內壁上也會積累電荷,這些電荷會在靜電夾盤上感應出相反極性的電荷,從而干擾靜電吸盤對基片的吸附力,影響晶圓移動的安全性。In the prior art, the insulating
本發明的目的在於提供一種具有釋放靜電功能的冷卻裝置及冷卻管組件,用以解決前述先前技術中所面臨的問題。The purpose of the present invention is to provide a cooling device and a cooling tube assembly with a function of discharging static electricity, so as to solve the aforementioned problems in the prior art.
為了達到上述目的,本發明的第一技術方案是提供一種具有釋放靜電功能的冷卻裝置,其包括基板、射頻屏蔽板、冷卻管連接器、高電阻冷卻管及金屬冷卻管。基板中設置有冷卻通道。射頻屏蔽板設置在基板的下方。冷卻管連接器設置在射頻屏蔽板中,在射頻屏蔽板的上表面和下表面分別具有冷卻管連接器的第一端和第二端。高電阻冷卻管的一端與基板中的冷卻通道連接,高電阻冷卻管的另一端與冷卻管連接器的第一端連接。金屬冷卻管的一端與冷卻管連接器的第二端連接,金屬冷卻管的另一端接地。In order to achieve the above objective, the first technical solution of the present invention is to provide a cooling device with a function of discharging static electricity, which includes a substrate, a radio frequency shielding plate, a cooling tube connector, a high-resistance cooling tube, and a metal cooling tube. A cooling channel is provided in the substrate. The radio frequency shielding board is arranged under the substrate. The cooling pipe connector is arranged in the radio frequency shielding plate, and the upper surface and the lower surface of the radio frequency shielding plate are respectively provided with a first end and a second end of the cooling pipe connector. One end of the high-resistance cooling pipe is connected with the cooling channel in the base plate, and the other end of the high-resistance cooling pipe is connected with the first end of the cooling pipe connector. One end of the metal cooling pipe is connected to the second end of the cooling pipe connector, and the other end of the metal cooling pipe is grounded.
較佳地,基板與射頻供電模組連接。Preferably, the substrate is connected to the radio frequency power supply module.
較佳地,射頻屏蔽板與基板之間可形成射頻耦合區域。Preferably, a radio frequency coupling area can be formed between the radio frequency shielding plate and the substrate.
較佳地,流體在高電阻冷卻管、金屬冷卻管和冷卻通道中流動。Preferably, the fluid flows in the high-resistance cooling pipe, the metal cooling pipe and the cooling channel.
較佳地,流體可為水或熱傳導液。Preferably, the fluid may be water or heat transfer fluid.
為了達到上述目的,本發明的第二技術方案是提供一種具有釋放靜電功能的冷卻裝置,其包括基板、射頻屏蔽板、冷卻管連接器、高電阻冷卻管及冷卻管。基板中設置有冷卻通道。射頻屏蔽板設置在基板的下方。冷卻管連接器設置在射頻屏蔽板中,在射頻屏蔽板的上表面和下表面分別具有冷卻管連接器的第一端和第二端。高電阻冷卻管的一端與基板中的冷卻通道連接,高電阻冷卻管的另一端與冷卻管連接器的第一端連接。冷卻管的一端與冷卻管連接器的第二端連接,冷卻管中的至少一個的內壁連結金屬件,且金屬件接地。In order to achieve the above objective, the second technical solution of the present invention is to provide a cooling device with a function of discharging static electricity, which includes a substrate, a radio frequency shielding plate, a cooling tube connector, a high-resistance cooling tube, and a cooling tube. A cooling channel is provided in the substrate. The radio frequency shielding board is arranged under the substrate. The cooling pipe connector is arranged in the radio frequency shielding plate, and the upper surface and the lower surface of the radio frequency shielding plate are respectively provided with a first end and a second end of the cooling pipe connector. One end of the high-resistance cooling pipe is connected with the cooling channel in the base plate, and the other end of the high-resistance cooling pipe is connected with the first end of the cooling pipe connector. One end of the cooling pipe is connected with the second end of the cooling pipe connector, the inner wall of at least one of the cooling pipes is connected to the metal piece, and the metal piece is grounded.
較佳地,基板與射頻供電模組連接。Preferably, the substrate is connected to the radio frequency power supply module.
較佳地,射頻屏蔽板與基板之間可形成射頻耦合區域。Preferably, a radio frequency coupling area can be formed between the radio frequency shielding plate and the substrate.
較佳地,流體在高電阻冷卻管、冷卻管和冷卻通道中流動。Preferably, the fluid flows in the high-resistance cooling pipe, the cooling pipe and the cooling channel.
較佳地,流體可為水或熱傳導液。Preferably, the fluid may be water or heat transfer fluid.
較佳地,冷卻管為非金屬冷卻管。Preferably, the cooling pipe is a non-metallic cooling pipe.
為了達到上述目的,本發明的第三技術方案是提供一種具有釋放靜電功能的冷卻管組件,其包括冷卻管連接器、高電阻冷卻管及金屬冷卻管。冷卻管連接器具有冷卻管連接器的第一端和第二端。高電阻冷卻管的一端與冷卻通道連接,高電阻冷卻管的另一端與冷卻管連接器的第一端連接。金屬冷卻管的一端與冷卻管連接器的第二端連接,金屬冷卻管的另一端接地。In order to achieve the above objective, the third technical solution of the present invention is to provide a cooling tube assembly with a function of discharging static electricity, which includes a cooling tube connector, a high-resistance cooling tube, and a metal cooling tube. The cooling pipe connector has a first end and a second end of the cooling pipe connector. One end of the high-resistance cooling pipe is connected with the cooling channel, and the other end of the high-resistance cooling pipe is connected with the first end of the cooling pipe connector. One end of the metal cooling pipe is connected to the second end of the cooling pipe connector, and the other end of the metal cooling pipe is grounded.
為了達到上述目的,本發明的第四技術方案是提供一種電漿處理設備,該設備包括靜電吸盤和上述的具有釋放靜電功能的冷卻裝置,靜電吸盤設置在基板之上以承載基片,當電漿對基片進行處理時,冷卻裝置對基片進行溫度調節。In order to achieve the above objective, the fourth technical solution of the present invention is to provide a plasma processing equipment, which includes an electrostatic chuck and the above-mentioned cooling device with the function of discharging static electricity. The electrostatic chuck is arranged on a substrate to carry the substrate. When the slurry processes the substrate, the cooling device adjusts the temperature of the substrate.
與先前技術相比,本發明中的連接基板內的冷卻通道的冷卻管由兩部分組成。在基板和射頻屏蔽板之間的冷卻管是高阻冷卻管,該段冷卻管處於射頻環境中,且使用高阻材料製成,用於防止射頻電流經該冷卻管從射頻屏蔽板導出。在射頻屏蔽板下方的冷卻管由金屬製成或者在冷卻管中設置接地的金屬件,用於將該段冷卻管中的電荷導走。因此,本發明一方面,透過高電阻冷卻管的高電阻特性避免因靜電電荷而產生電弧現象,另一方面,透過金屬冷卻管接地而將靜電電荷導走,進一步防止產生電弧,並且降低靜電吸盤失效的機率,並提高晶圓移動的安全性。Compared with the prior art, the cooling pipe connecting the cooling channels in the base plate in the present invention is composed of two parts. The cooling pipe between the base plate and the radio frequency shielding plate is a high-resistance cooling pipe. This section of the cooling pipe is in a radio frequency environment and is made of high-resistance materials to prevent the radio frequency current from being led out from the radio frequency shielding plate through the cooling pipe. The cooling pipe under the radio frequency shielding plate is made of metal or a grounded metal piece is provided in the cooling pipe to conduct the electric charge in the section of the cooling pipe. Therefore, the present invention, on the one hand, avoids arcing due to electrostatic charges through the high resistance characteristics of the high-resistance cooling tube, on the other hand, conducts the electrostatic charge away through the grounding of the metal cooling tube, further prevents arcing, and reduces the electrostatic chuck The probability of failure and improve the safety of wafer movement.
為了有利於瞭解本發明的特徵、內容與優點及其所能達成的功效,茲將本發明配合附圖,並以實施方式的表達形式詳細說明如下,而其中所使用的附圖,其主旨僅為示意及輔助說明書之用,未必為本發明實施後的真實比例與精準配置,故不應就所附的附圖式的比例與配置關係解讀、局限本發明於實際實施上的權利範圍。In order to facilitate the understanding of the features, content and advantages of the present invention and the effects that can be achieved, the present invention is combined with the accompanying drawings and described in detail as follows in the form of implementation manners, and the accompanying drawings used therein have only For the purpose of illustration and to assist the description, it may not be the true scale and precise configuration after the implementation of the present invention. Therefore, the scale and configuration relationship of the accompanying drawings should not be interpreted to limit the scope of rights of the present invention in actual implementation.
〈第一實施例〉<First embodiment>
請參閱圖2,其為本發明的具有釋放靜電功能的冷卻裝置的第一實施例的示意圖。如圖所示,本發明的第一實施例是提供一種具有釋放靜電功能的冷卻裝置100,其包括基板110、射頻屏蔽板120、冷卻管連接器130、高電阻冷卻管140及金屬冷卻管150。Please refer to FIG. 2, which is a schematic diagram of the first embodiment of the cooling device with the function of discharging static electricity according to the present invention. As shown in the figure, the first embodiment of the present invention provides a
並且,基板110中設置有冷卻通道111,基板110的上方連接靜電吸盤200 (electrostatic chuck,ESC)。射頻屏蔽板120設置在基板110的下方。冷卻管連接器130設置在射頻屏蔽板120中,在射頻屏蔽板120的上表面和下表面分別具有冷卻管連接器130的第一端131和第二端132。高電阻冷卻管140的一端與基板110中的冷卻通道111連接,高電阻冷卻管140的另一端與冷卻管連接器130的第一端131連接。金屬冷卻管150的一端與冷卻管連接器130的第二端132連接,金屬冷卻管150的另一端接地。上述連接方式透過機械連接固定,例如螺紋式連接、卡扣式連接等。In addition, the
此外,基板110透過射頻桿(RF rod)與射頻供電模組160連接。其中,射頻供電模組160可與交流電供電模組相同;進一步地,射頻供電模組160用於輸出射頻電源。In addition, the
例如,射頻桿的一端連接射頻供電端,另一端則分為二連接桿連接基板110相對於靜電吸盤200的一面。For example, one end of the radio frequency rod is connected to the radio frequency power supply end, and the other end is divided into two connecting rods to connect the side of the
更進一步地,射頻屏蔽板120與基板110之間可形成射頻耦合區域。因此,在射頻屏蔽板120上方為射頻環境,下方為大氣環境。高電阻冷卻管140處於射頻環境中,金屬冷卻管150在大氣環境中。高電阻冷卻管140防止射頻電流直接從基板110經高電阻冷卻管140流至射頻屏蔽板120,從而無法向反應腔饋入射頻功率。而金屬冷卻管150透過接地可使得在其中積累的電荷被導走。Furthermore, a radio frequency coupling area can be formed between the radio
並且,流體在高電阻冷卻管140、金屬冷卻管150和冷卻通道111中流動。And, the fluid flows in the high-
其中,流體可為水(或去離子水)或熱傳導液,其中,熱傳導液可為乙二醇、氟化冷卻劑(諸如來自3M的Fluorinert®或來自Solvay Solexis公司的Galden®)、或任何其他適合的介電流體(諸如包含全氟化惰性聚醚的介電流體)。Among them, the fluid can be water (or deionized water) or a heat transfer fluid, where the heat transfer fluid can be ethylene glycol, a fluorinated coolant (such as Fluorinert® from 3M or Galden® from Solvay Solexis), or any other Suitable dielectric fluids (such as dielectric fluids containing perfluorinated inert polyethers).
本發明透過高電阻冷卻管140的高電阻特性避免因靜電電荷而在高電阻冷卻管140與射頻桿之間產生電弧現象,另一方面,透過金屬冷卻管150接地而將靜電電荷導走。The present invention avoids the arc phenomenon between the high
本實施例再提供一種具有釋放靜電功能的冷卻裝置100,其包括基板110、射頻屏蔽板120、冷卻管連接器130、高電阻且耐高溫/低溫的高電阻冷卻管140及金屬冷卻管150。This embodiment further provides a
並且,基板110中設置有冷卻通道111,基板110的上方連接靜電吸盤200。射頻屏蔽板120設置在基板110的下方。冷卻管連接器130設置在射頻屏蔽板120中,在射頻屏蔽板120的上表面和下表面分別具有冷卻管連接器130的第一端131和第二端132。高電阻且耐高溫/低溫的高電阻冷卻管140的一端與基板110中的冷卻通道111連接,高電阻且耐高溫/低溫的高電阻冷卻管140的另一端與冷卻管連接器130的第一端131連接。金屬冷卻管150的一端與冷卻管連接器130的第二端132連接,金屬冷卻管150的另一端接地。In addition, a
藉此,透過高電阻且耐高溫/低溫的高電阻冷卻管140可以承受更高溫度及更低溫度的特性,從而降低冷卻管因在高溫或低溫應用時發生裂紋而發生漏液的風險。In this way, the high-resistance and high-resistance/low-temperature-resistant high-
〈第二實施例〉<Second Embodiment>
請參閱圖3,其為本發明的具有釋放靜電功能的冷卻裝置的第二實施例的示意圖。如圖所示,為了達到上述目的,本發明的第二技術方案是提供一種具有釋放靜電功能的冷卻裝置100,其包括基板110、射頻屏蔽板120、冷卻管連接器130、高電阻冷卻管140及非金屬冷卻管170Please refer to FIG. 3, which is a schematic diagram of a second embodiment of the cooling device with the function of discharging static electricity according to the present invention. As shown in the figure, in order to achieve the above objective, the second technical solution of the present invention is to provide a
並且,基板110中設置有冷卻通道111,基板110的上方連接靜電吸盤200。射頻屏蔽板120設置在基板110的下方。冷卻管連接器130設置在射頻屏蔽板120中,在射頻屏蔽板120的上表面和下表面分別具有冷卻管連接器130的第一端131和第二端132。高電阻冷卻管140的一端與基板110中的冷卻通道111連接,高電阻冷卻管140的另一端與冷卻管連接器130的第一端131連接。非金屬冷卻管170的一端與冷卻管連接器130的第二端132連接,非金屬冷卻管170中的至少一個的內壁連結金屬件180,金屬件180接地。其中,金屬件180可為金屬導線,但並不以此為限。可選地,非金屬冷卻管170的內壁由導電膜全部或部分地包覆。接地的金屬件180與該導電膜電連接以導出積聚的電荷。In addition, a
從而,透過高電阻冷卻管140的高電阻特性避免因靜電電荷而產生電弧現象,另一方面透過金屬件180接地而將靜電電荷導走。Therefore, the high resistance characteristic of the high
並且,基板110透過射頻桿(RF rod)與射頻供電模組160連接。其中,射頻供電模組160可與交流電供電模組相同;進一步地,射頻供電模組160用於輸出射頻電源。In addition, the
例如,射頻桿的一端連接射頻供電端,另一端則分為二連接桿連接基板110相對於靜電吸盤200的一面。For example, one end of the radio frequency rod is connected to the radio frequency power supply end, and the other end is divided into two connecting rods to connect the side of the
更進一步地,射頻屏蔽板120與基板110之間可形成射頻耦合區域。Furthermore, a radio frequency coupling area can be formed between the radio
並且,流體在高電阻冷卻管140、非金屬冷卻管170和冷卻通道111中流動。And, the fluid flows in the high-
其中,流體可為水(或去離子水)或熱傳導液,其中,熱傳導液可為乙二醇、氟化冷卻劑(諸如來自3M的Fluorinert®或來自Solvay Solexis公司的Galden®)、或任何其他適合的介電流體(諸如包含全氟化惰性聚醚的介電流體)。Among them, the fluid can be water (or deionized water) or a heat transfer fluid, where the heat transfer fluid can be ethylene glycol, a fluorinated coolant (such as Fluorinert® from 3M or Galden® from Solvay Solexis), or any other Suitable dielectric fluids (such as dielectric fluids containing perfluorinated inert polyethers).
本實施例再提供一種具有釋放靜電功能的冷卻裝置100,其包括基板110、射頻屏蔽板120、冷卻管連接器130、高電阻且耐高溫/低溫的高電阻冷卻管140及非金屬冷卻管170。This embodiment further provides a
進一步地,基板110中設置有冷卻通道111,基板110的上方連接靜電吸盤200。射頻屏蔽板120設置在基板110的下方。冷卻管連接器130設置在射頻屏蔽板120中,在射頻屏蔽板120的上表面和下表面分別具有冷卻管連接器130的第一端131和第二端132。高電阻且耐高溫/低溫的高電阻冷卻管140的一端與基板110中的冷卻通道111連接,高電阻且耐高溫/低溫的高電阻冷卻管140的另一端與冷卻管連接器130的第一端131連接。非金屬冷卻管170的一端與冷卻管連接器130的第二端132連接,非金屬冷卻管170中的至少一個的內壁連結金屬件180,金屬件180接地。其中,金屬件180可為金屬導線,但並不以此為限。Furthermore, a
藉此,透過高電阻且耐高溫/低溫的高電阻冷卻管140可以承受更高溫度及更低溫度的特性,從而降低冷卻管因在高溫或低溫應用時發生裂紋而發生漏液的風險。In this way, the high-resistance and high-resistance/low-temperature-resistant high-
〈第三實施例〉<Third Embodiment>
請參閱圖4,其為本發明的具有釋放靜電功能的冷卻裝置的第三實施例的示意圖。如圖所示,為了達到上述目的,本發明的第三技術方案是提供一種具有釋放靜電功能的冷卻裝置100,其包括基板110、射頻屏蔽板120、冷卻管連接器130、高電阻冷卻管140及冷卻管190Please refer to FIG. 4, which is a schematic diagram of the third embodiment of the cooling device with the function of discharging static electricity according to the present invention. As shown in the figure, in order to achieve the above objective, the third technical solution of the present invention is to provide a
並且,基板110中設置有冷卻通道111,基板110的上方連接靜電吸盤200。射頻屏蔽板120設置在基板110的下方。冷卻管連接器130設置在射頻屏蔽板120中,在射頻屏蔽板120的上表面和下表面分別具有冷卻管連接器130的第一端131和第二端132。高電阻冷卻管140的一端與基板110中的冷卻通道111連接,高電阻冷卻管140的另一端與冷卻管連接器130的第一端131連接。冷卻管190的一端與冷卻管連接器130的第二端132連接,冷卻管190中的至少一個的內壁連結金屬件180,金屬件180接地。其中,金屬件180可為金屬導線,但並不以此為限。In addition, a
從而,透過高電阻冷卻管140的高電阻特性避免因靜電電荷而產生電弧現象,另一方面透過金屬件180接地而將靜電電荷導走。Therefore, the high resistance characteristic of the high
並且,基板110透過射頻桿(RF rod)與射頻供電模組160連接。其中,射頻供電模組160可與交流電供電模組相同;進一步地,射頻供電模組160用於輸出射頻電源。In addition, the
例如,射頻桿的一端連接射頻供電端,另一端則分為二連接桿連接基板110相對於靜電吸盤200的一面。For example, one end of the radio frequency rod is connected to the radio frequency power supply end, and the other end is divided into two connecting rods to connect the side of the
更進一步地,射頻屏蔽板120與基板110之間可形成射頻耦合區域。Furthermore, a radio frequency coupling area can be formed between the radio
並且,流體在高電阻冷卻管140、冷卻管190和冷卻通道111中流動。And, the fluid flows in the high-
其中,流體可為水(或去離子水)或熱傳導液,其中,熱傳導液可為乙二醇、氟化冷卻劑(諸如來自3M的Fluorinert®或來自Solvay Solexis公司的Galden®)、或任何其他適合的介電流體(諸如包含全氟化惰性聚醚的介電流體)。Among them, the fluid can be water (or deionized water) or a heat transfer fluid, where the heat transfer fluid can be ethylene glycol, a fluorinated coolant (such as Fluorinert® from 3M or Galden® from Solvay Solexis), or any other Suitable dielectric fluids (such as dielectric fluids containing perfluorinated inert polyethers).
本實施例再提供一種具有釋放靜電功能的冷卻裝置100,其包括基板110、射頻屏蔽板120、冷卻管連接器130、高電阻且耐高溫/低溫的高電阻冷卻管140及冷卻管190。This embodiment further provides a
並且,基板110中設置有冷卻通道111,基板110的上方連接靜電吸盤200。射頻屏蔽板120設置在基板110的下方。冷卻管連接器130設置在射頻屏蔽板120中,在射頻屏蔽板120的上表面和下表面分別具有冷卻管連接器130的第一端131和第二端132。高電阻且耐高溫/低溫的高電阻冷卻管140的一端與基板110中的冷卻通道111連接,高電阻且耐高溫/低溫的高電阻冷卻管140的另一端與冷卻管連接器130的第一端131連接。冷卻管190的一端與冷卻管連接器130的第二端132連接,冷卻管190中的至少一個的內壁連結金屬件180,金屬件180接地。其中,金屬件180可為金屬導線,但並不以此為限。In addition, a
藉此,透過高電阻且耐高溫/低溫的高電阻冷卻管140可以承受更高溫度及更低溫度的特性,從而降低冷卻管因在高溫或低溫應用時發生裂紋而發生漏液的風險。In this way, the high-resistance and high-resistance/low-temperature-resistant high-
〈第四實施例〉<Fourth embodiment>
本發明的第四實施例是提供一種具有釋放靜電功能的冷卻裝置100,其包括基板110、射頻屏蔽板120、冷卻管連接器130、高電阻冷卻管140及金屬接地件。The fourth embodiment of the present invention provides a
並且,基板110中設置有冷卻通道111,基板110的上方連接靜電吸盤200。射頻屏蔽板120設置在基板110的下方。冷卻管連接器130設置在射頻屏蔽板120中,在射頻屏蔽板120的上表面和下表面分別具有冷卻管連接器130的第一端131和第二端132。高電阻冷卻管140的一端與基板110中的冷卻通道111連接,高電阻冷卻管140的另一端與冷卻管連接器130的第一端131連接。金屬接地件的一端與冷卻管連接器130的第二端132連接,金屬接地件的另一端接地。其中,金屬接地件可為金屬導線,但並不以此為限。In addition, a
此外,基板110透過射頻桿(RF rod)與射頻供電模組160連接。其中,射頻供電模組160可與交流電供電模組相同;進一步地,射頻供電模組160用於輸出射頻電源。In addition, the
例如,射頻桿的一端連接射頻供電端,另一端則分為二連接桿連接基板110相對於靜電吸盤200的一面。For example, one end of the radio frequency rod is connected to the radio frequency power supply end, and the other end is divided into two connecting rods to connect the side of the
更進一步地,射頻屏蔽板120與基板110之間可形成射頻耦合區域。Furthermore, a radio frequency coupling area can be formed between the radio
並且,流體在高電阻冷卻管140和冷卻通道111中流動。And, the fluid flows in the high-
其中,流體可為水(或去離子水)或熱傳導液,其中,熱傳導液可為乙二醇、氟化冷卻劑(諸如來自3M的Fluorinert®或來自Solvay Solexis公司的Galden®)、或任何其他適合的介電流體(諸如包含全氟化惰性聚醚的介電流體)。Among them, the fluid can be water (or deionized water) or a heat transfer fluid, where the heat transfer fluid can be ethylene glycol, a fluorinated coolant (such as Fluorinert® from 3M or Galden® from Solvay Solexis), or any other Suitable dielectric fluids (such as dielectric fluids containing perfluorinated inert polyethers).
本實施例再提供一種具有釋放靜電功能的冷卻裝置100,其包括基板110、射頻屏蔽板120、冷卻管連接器130、高電阻且耐高溫/低溫的高電阻冷卻管140及金屬接地件。This embodiment further provides a
並且,基板110中設置有冷卻通道111,基板110的上方連接靜電吸盤200。射頻屏蔽板120設置在基板110的下方。冷卻管連接器130設置在射頻屏蔽板120中,在射頻屏蔽板120的上表面和下表面分別具有冷卻管連接器130的第一端131和第二端132。高電阻且耐高溫/低溫的高電阻冷卻管140的一端與基板110中的冷卻通道111連接,高電阻且耐高溫/低溫的高電阻冷卻管140的另一端與冷卻管連接器130的第一端131連接。金屬接地件的一端與冷卻管連接器130的第二端132連接,金屬接地件的另一端接地。其中,金屬接地件可為金屬導線,但並不以此為限。In addition, a
藉此,透過高電阻且耐高溫/低溫的高電阻冷卻管140可以承受更高溫度及更低溫度的特性,從而降低冷卻管因在高溫或低溫應用時發生裂紋而發生漏液的風險。In this way, the high-resistance and high-resistance/low-temperature-resistant high-
〈第五實施例〉<Fifth Embodiment>
本發明的具有釋放靜電功能的冷卻管組件,其包括冷卻管連接器130、高電阻冷卻管140及金屬冷卻管150。The cooling pipe assembly with the function of discharging static electricity of the present invention includes a
並且,冷卻管連接器130具有第一端131和第二端132。高電阻冷卻管140的一端與冷卻通道111連接,高電阻冷卻管140的另一端與冷卻管連接器130的第一端131連接。金屬冷卻管150的一端與冷卻管連接器130的第二端132連接,金屬冷卻管150的另一端接地。In addition, the
從而,透過高電阻冷卻管140的高電阻特性避免因靜電電荷而產生電弧現象,另一方面透過金屬冷卻管150接地而將靜電電荷導走。Therefore, the high resistance characteristic of the high
本實施例再提供一種具有釋放靜電功能的冷卻管組件,其包括冷卻管連接器130、高電阻且耐高溫/低溫的高電阻冷卻管140及金屬冷卻管150。This embodiment further provides a cooling pipe assembly with a function of discharging static electricity, which includes a
並且,冷卻管連接器130具有第一端131和第二端132。高電阻且耐高溫/低溫的高電阻冷卻管140的一端與冷卻通道111連接,高電阻且耐高溫/低溫的高電阻冷卻管140的另一端與冷卻管連接器130的第一端131連接。金屬冷卻管150的一端與冷卻管連接器130的第二端132連接,金屬冷卻管150的另一端接地。In addition, the
藉此,透過高電阻且耐高溫/低溫的高電阻冷卻管140可以承受更高溫度及更低溫度的特性,從而降低冷卻管因在高溫或低溫應用時發生裂紋而發生漏液的風險。In this way, the high-resistance and high-resistance/low-temperature-resistant high-
〈第六實施例〉<Sixth Embodiment>
本發明的第六實施例提供了一種電漿處理設備,該設備包括靜電吸盤200和上述的具有釋放靜電功能的冷卻裝置100,靜電吸盤200設置在基板110之上以承載基片,當電漿對基片進行處理時,冷卻裝置100對基片進行溫度調節。The sixth embodiment of the present invention provides a plasma processing equipment. The equipment includes an
與先前技術相比,本發明在基板和射頻屏蔽板之間設置的冷卻管是高阻冷卻管,該段冷卻管處於射頻環境中,且使用高阻材料製成,用於防止射頻電流經該冷卻管從射頻屏蔽板導出,在射頻屏蔽板下方的冷卻管由金屬製成或者在冷卻管中設置接地的金屬件,用於將該段冷卻管中的電荷導走。因此,本發明一方面,透過高電阻冷卻管的高電阻特性避免因靜電電荷而產生電弧現象,另一方面,透過金屬冷卻管接地而將靜電電荷導走,進一步防止產生電弧,並且降低靜電吸盤失效的機率,並提高晶圓移動的安全性。Compared with the prior art, the cooling tube arranged between the base plate and the radio frequency shielding plate of the present invention is a high resistance cooling tube. The cooling pipe is led out from the radio frequency shielding plate, and the cooling pipe under the radio frequency shielding plate is made of metal or a grounded metal piece is provided in the cooling pipe to conduct the electric charge in the section of the cooling pipe. Therefore, the present invention, on the one hand, avoids arcing due to electrostatic charges through the high resistance characteristics of the high-resistance cooling tube, on the other hand, conducts the electrostatic charge away through the grounding of the metal cooling tube, further prevents arcing, and reduces the electrostatic chuck The probability of failure and improve the safety of wafer movement.
儘管本發明的內容已經透過上述較佳實施例作了詳細介紹,但應當認識到上述的說明不應被認為是對本發明的限制。在本領域具有通常知識者閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation to the present invention. Various modifications and substitutions to the present invention will be obvious after reading the above content by those with ordinary knowledge in the field. Therefore, the scope of protection of the present invention should be limited by the scope of the attached patent application.
10:基板 20:靜電吸盤 30:軟管 100:冷卻裝置 110:基板 111:冷卻通道 120:射頻屏蔽板 130:冷卻管連接器 131:第一端 132:第二端 140:高電阻冷卻管 150:金屬冷卻管 160: 射頻供電模組 170:非金屬冷卻管 180:金屬件 190:冷卻管 200:靜電吸盤 10: substrate 20: Electrostatic chuck 30: hose 100: Cooling device 110: substrate 111: cooling channel 120: RF shielding board 130: Cooling pipe connector 131: first end 132: second end 140: high resistance cooling pipe 150: Metal cooling pipe 160: RF power supply module 170: Non-metallic cooling pipe 180: metal parts 190: Cooling pipe 200: Electrostatic chuck
圖1是先前技術的冷卻裝置的示意圖; 圖2是本發明的具有釋放靜電功能的冷卻裝置的第一實施例的示意圖; 圖3是本發明的具有釋放靜電功能的冷卻裝置的第二實施例的示意圖; 圖4是本發明的具有釋放靜電功能的冷卻裝置的第三實施例的示意圖。 Figure 1 is a schematic diagram of a prior art cooling device; 2 is a schematic diagram of the first embodiment of the cooling device with the function of discharging static electricity according to the present invention; 3 is a schematic diagram of a second embodiment of the cooling device with the function of discharging static electricity according to the present invention; Fig. 4 is a schematic diagram of a third embodiment of the cooling device with the function of discharging static electricity according to the present invention.
100:冷卻裝置 110:基板 111:冷卻通道 120:射頻屏蔽板 130:冷卻管連接器 131:第一端 132:第二端 140:高電阻冷卻管 150:金屬冷卻管 160:非金屬冷卻管 200:靜電吸盤 100: Cooling device 110: substrate 111: cooling channel 120: RF shielding board 130: Cooling pipe connector 131: first end 132: second end 140: high resistance cooling pipe 150: Metal cooling pipe 160: Non-metallic cooling pipe 200: Electrostatic chuck
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004015736A2 (en) * | 2002-08-12 | 2004-02-19 | Applied Materials, Inc. | Low loss rf bias electrode for a plasma reactor with enhanced wafer edge rf coupling and highly efficient wafer cooling |
TW200627501A (en) * | 2005-01-28 | 2006-08-01 | Applied Materials Inc | Method and apparatus to confine plasma and to enhance flow conductance |
TW201931428A (en) * | 2017-12-29 | 2019-08-01 | 大陸商中微半導體設備(上海)股份有限公司 | Plasma reactor having a function of tuning low frequency RF power distribution |
Family Cites Families (10)
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---|---|---|---|---|
KR20050004331A (en) * | 2003-07-02 | 2005-01-12 | 주성엔지니어링(주) | Cooling pipe which having high surface resistance |
KR20060007663A (en) * | 2004-07-20 | 2006-01-26 | 삼성전자주식회사 | Plasma processing apparatus |
JP4551256B2 (en) * | 2005-03-31 | 2010-09-22 | 東京エレクトロン株式会社 | Mounting table temperature control device, mounting table temperature control method, processing device, and mounting table temperature control program |
CN101373731B (en) * | 2008-10-21 | 2013-02-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck apparatus and temperature control method thereof |
CN101866826B (en) * | 2010-04-29 | 2012-04-11 | 中微半导体设备(上海)有限公司 | Fluid conveying device for vacuum processing system |
US8410393B2 (en) * | 2010-05-24 | 2013-04-02 | Lam Research Corporation | Apparatus and method for temperature control of a semiconductor substrate support |
JP2013062317A (en) * | 2011-09-12 | 2013-04-04 | Tokyo Electron Ltd | Substrate cooling mechanism, substrate cooling method, and heat treatment apparatus |
KR102103136B1 (en) * | 2011-09-30 | 2020-04-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Electrostatic chuck with temperature control |
US9668373B2 (en) * | 2013-03-15 | 2017-05-30 | Applied Materials, Inc. | Substrate support chuck cooling for deposition chamber |
WO2019204124A1 (en) * | 2018-04-20 | 2019-10-24 | Applied Materials, Inc. | Ceramic wafer heater with integrated pressurized helium cooling |
-
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004015736A2 (en) * | 2002-08-12 | 2004-02-19 | Applied Materials, Inc. | Low loss rf bias electrode for a plasma reactor with enhanced wafer edge rf coupling and highly efficient wafer cooling |
TW200627501A (en) * | 2005-01-28 | 2006-08-01 | Applied Materials Inc | Method and apparatus to confine plasma and to enhance flow conductance |
TW201931428A (en) * | 2017-12-29 | 2019-08-01 | 大陸商中微半導體設備(上海)股份有限公司 | Plasma reactor having a function of tuning low frequency RF power distribution |
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