TWI734956B - Laser welding device for semiconductor element and method for using the same - Google Patents
Laser welding device for semiconductor element and method for using the same Download PDFInfo
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- 238000003466 welding Methods 0.000 title claims abstract description 101
- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000002131 composite material Substances 0.000 claims description 24
- 238000001514 detection method Methods 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 16
- 238000007689 inspection Methods 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 9
- 238000005476 soldering Methods 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000013461 design Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 16
- 238000010030 laminating Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000004093 laser heating Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/21—Bonding by welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/005—Soldering by means of radiant energy
- B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/02—Carriages for supporting the welding or cutting element
- B23K37/0211—Carriages for supporting the welding or cutting element travelling on a guide member, e.g. rail, track
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Wire Bonding (AREA)
- Supply And Installment Of Electrical Components (AREA)
- Laser Beam Processing (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
Abstract
Description
本發明係有關於一種半導體元件雷射焊接裝置及方法。 The invention relates to a laser welding device and method for semiconductor components.
按,一般半導體產業製程中,晶粒廠透過晶粒分選機,將晶粒排列於膠膜(Tape)上,出貨給下游固晶廠,固晶廠使用貼件機方式(Pick and Place),將晶片逐個擺放固定於線路基板上,過程中還需要點上錫膏等可固晶且又可導電之膏狀有黏性介質,而後才將整片固晶後的導電板經過回流焊接(Reflow)製程進行加熱固化。 According to the general semiconductor industry process, the die factory arranges the die on the tape through the die sorting machine, and ships it to the downstream die-bonding plant. The die-bonding plant uses the pick and place method (Pick and Place). ), place the chips one by one and fix them on the circuit substrate. During the process, solder paste and other paste-like and conductive paste-like media that can be die-bonded and can be conductive are also applied, and then the entire die-bonded conductive plate is reflowed Welding (Reflow) process for heating and curing.
然而,在此類習知製造過程具有下述缺點,1.Reflow製程溫度上升曲線慢,一顆晶片上至少有2個回焊點的固化反應時間不一,容易使得晶粒翹起形成不良,2.Reflow製程無法針對單一不良晶粒進行修補或重工,重工整片會進而影響其他回焊正常的晶片,3.小於3密耳(mil)之晶粒,點膠技術良率難以突破,4.經過分選機、固晶機2次的Pick and Place製程作業時間慢、設備投資成本相當龐大,存在亟待改善之缺弊。 However, this kind of conventional manufacturing process has the following disadvantages: 1. The temperature rise curve of the Reflow process is slow, and the curing reaction time of at least two reflow points on a wafer is different, which is easy to cause the formation of poor die warping. 2. The Reflow process cannot be repaired or reworked for a single defective die, and reworked the whole piece will further affect other normal reflow wafers. 3. Die less than 3 mils (mil), the yield rate of dispensing technology is difficult to break through, 4 .The Pick and Place process, which passes through the sorting machine and the die-bonding machine twice, has a slow operation time and a huge equipment investment cost, and there are shortcomings that need to be improved urgently.
因此,有必要提供一種新穎且具有進步性之半導體元件雷射焊接裝置及方法,以解決上述之問題。 Therefore, it is necessary to provide a novel and progressive laser welding device and method for semiconductor devices to solve the above-mentioned problems.
本發明之主要目的在於提供一種半導體元件雷射焊接裝置及方法,將半導體元件依照線路基板接合點間距排列於Tape上,可直接進行Tape與導電基板的貼合,並以雷射光加熱方式進行穿透式掃描焊接,其優點為:1.可減少LED等半導體元件回焊難以克服的異常問題,取代現有固晶機、Reflow設備,2.無須再次依電路板位置,由固晶設備對晶粒做Pick and Place作業,可直接由晶粒分選段之Tape膜進行真空貼合巨量轉移,以顯示屏動輒數千萬顆的晶粒,速度遠高於Pick and Place數萬倍,可節省許多製程時間,3.雷射穿透式掃描焊接技術,因晶粒夾在Tape與線路基板之間,且真空貼合對晶粒與線路間具有壓合的效果,雷射加熱溫度上升曲線快速,製程上不會有晶粒翹起等不良問題產生。 The main purpose of the present invention is to provide a semiconductor element laser soldering device and method. The semiconductor elements are arranged on the tape according to the pitch of the circuit substrate joints, so that the tape and the conductive substrate can be directly bonded, and the laser light heating method is used for the penetration. Through scanning welding, its advantages are: 1. It can reduce the abnormal problems that are difficult to overcome in the reflow of semiconductor components such as LEDs, and replace the existing die-bonding machine and Reflow equipment. For Pick and Place operations, vacuum bonding can be directly carried out from the tape film of the die sorting section for massive transfer. With the display screen tens of millions of die, the speed is much higher than Pick and Place by tens of thousands of times, which can save a lot Process time, 3. Laser penetration scanning welding technology, because the die is sandwiched between the Tape and the circuit substrate, and the vacuum bonding has a pressing effect between the die and the circuit, the laser heating temperature rises quickly, During the manufacturing process, there will be no defects such as die lifting.
為達成上述目的,本發明提供一種半導體元件雷射焊接裝置,供焊接一貼合成品,該貼合成品由一框架及一基板相貼合而成,該框架設有一貼膜及排列設於該貼膜之複數半導體元件,該半導體元件雷射焊接裝置包括一焊接設備。該焊接設備包括一座體,該座體設有一焊接載台及一焊接模組,該焊接載台供承載該貼合成品,該焊接模組設有一掃描模組及一雷射焊頭,該掃描模組供掃描該貼合成品,該雷射焊頭發出雷射光束穿透該貼膜與該基板至少其中一者。 In order to achieve the above objective, the present invention provides a semiconductor device laser welding device for welding a pasting composite, the pasting composite is formed by bonding a frame and a substrate, the frame is provided with a film and arranged on the film For a plurality of semiconductor elements, the semiconductor element laser welding device includes a welding device. The welding equipment includes a body, the base body is provided with a welding carrier and a welding module, and the welding carrier is used to carry the paste composite product. The module is used for scanning the sticker composite, and the laser welding head emits a laser beam to penetrate at least one of the sticker film and the substrate.
為達成上述目的,本發明另提供一種半導體元件雷射焊接方法,其提供一如上所述的半導體元件雷射焊接裝置,另包括以下步驟。貼合:該第一對位平台供將該基板轉動並對位至一第一預定角度,該第二對位平台供將該框架轉動並對位至一第二預定角度,該第一拿取裝置供將對位至該第一預定角度之基板及對位至該第二預定角度之框架其中一者拿取,並貼合至另一者以形 成該貼合成品;焊接:將該貼合成品置放於該焊接載台,該掃描模組掃描定位該貼合成品,並相對移動該雷射焊頭與該焊接載台之相對位置,以使該雷射焊頭定位及對應該等半導體元件並發出雷射光束穿透該貼膜與該基板至少其中一者,以加熱該等焊料進行焊接。 In order to achieve the above objective, the present invention further provides a semiconductor device laser welding method, which provides a semiconductor device laser welding device as described above, and further includes the following steps. Fitting: The first alignment platform is used for rotating and positioning the substrate to a first predetermined angle, and the second alignment platform is used for rotating and positioning the frame to a second predetermined angle, and the first picking The device is used to take one of the substrate aligned to the first predetermined angle and the frame aligned to the second predetermined angle, and attach to the other to shape Into the paste composite; welding: place the paste composite on the welding stage, the scanning module scans and locates the paste composite, and relatively moves the relative position of the laser welding head and the welding stage to The laser welding head is positioned and corresponding to the semiconductor elements and emits a laser beam to penetrate at least one of the film and the substrate to heat the solder for welding.
1:貼合設備 1: Laminating equipment
2:基座 2: pedestal
3:基板檢測機構 3: Substrate inspection mechanism
4:框架檢測機構 4: Frame inspection agency
5:焊接設備 5: Welding equipment
6:座體 6: Seat
7:焊接載台 7: Welding stage
8:焊接模組 8: Welding module
11:第一拿取裝置 11: The first picking device
12:基板拿取手臂 12: substrate taking arm
13:框架拿取手臂 13: Frame take arm
14:第一粗對位平台 14: The first rough counterpoint platform
15:中繼平台 15: Relay platform
16:貼合監控模組 16: Fit the monitoring module
131:夾具 131: Fixture
61:第一軌道 61: The first track
62:第二軌道 62: second track
63:升降裝置 63: Lifting device
81:掃描模組 81: Scanning module
82:雷射焊頭 82: Laser welding head
83:聚焦單元 83: Focusing unit
91:基板 91: substrate
92:框架 92: Frame
93:焊料 93: Solder
94:貼合成品 94: Paste composites
95:晶座盒 95: crystal holder box
96:框架盒座 96: frame box seat
911:導電線路 911: Conductive circuit
921:貼膜 921: film
922:半導體元件 922: Semiconductor components
31:第一對位平台 31: The first counterpoint platform
32:第一檢測模組 32: The first detection module
41:第二對位平台 41: The second counterpoint platform
42:第二檢測模組 42: The second detection module
L1:X軸 L1: X axis
L2:Y軸 L2: Y axis
L3:Z軸 L3: Z axis
圖1為本發明一較佳實施例之貼合設備立體圖。 Fig. 1 is a perspective view of a laminating device according to a preferred embodiment of the present invention.
圖2為本發明一較佳實施例之貼合設備俯視圖。 Figure 2 is a top view of a laminating device according to a preferred embodiment of the present invention.
圖3及4為本發明一較佳實施例之貼合成品立體示意圖。 3 and 4 are three-dimensional schematic diagrams of a pasting composite product according to a preferred embodiment of the present invention.
圖5及6為本發明一較佳實施例之貼合成品側視示意圖。 Figures 5 and 6 are schematic side views of a pasting composite according to a preferred embodiment of the present invention.
圖7為本發明一較佳實施例之焊接設備立體圖。 Fig. 7 is a perspective view of a welding equipment according to a preferred embodiment of the present invention.
圖8為本發明一較佳實施例之焊接設備側視圖。 Fig. 8 is a side view of a welding equipment according to a preferred embodiment of the present invention.
圖9為本發明一較佳實施例之焊接過程示意圖。 Fig. 9 is a schematic diagram of the welding process of a preferred embodiment of the present invention.
圖10為本發明一較佳實施例之另一焊接過程示意圖。 Fig. 10 is a schematic diagram of another welding process according to a preferred embodiment of the present invention.
圖11為本發明一較佳實施例之貼合設備另一立體圖。 Fig. 11 is another perspective view of the laminating device according to a preferred embodiment of the present invention.
以下僅以實施例說明本發明可能之實施態樣,然並非用以限制本發明所欲保護之範疇,合先敘明。 The following examples are only used to illustrate the possible implementation aspects of the present invention, but they are not intended to limit the scope of protection of the present invention, and are described first.
請參考圖1至11,其顯示本發明之一較佳實施例,本發明之半導體元件雷射焊接裝置供焊接一貼合成品94,該貼合成品94由一框架92及一基板91
相貼合而成,該框架92設有一貼膜921及排列設於該貼膜921之複數半導體元件922,該半導體元件雷射焊接裝置包括一焊接設備5。
Please refer to FIGS. 1 to 11, which show a preferred embodiment of the present invention. The semiconductor device laser soldering device of the present invention is used for soldering a
該焊接設備5包括一座體6,該座體6設有一焊接載台7及一焊接模組8,該焊接載台7供承載該貼合成品94,該焊接模組8設有一掃描模組81及一雷射焊頭82,該掃描模組81供掃描該貼合成品94,該雷射焊頭82發出雷射光束穿透該貼膜921與該基板91至少其中一者。
The
本發明另包括一貼合設備1,該貼合設備1包括一基座2、一基板檢測機構3、一框架檢測機構4及一第一拿取裝置11,該基座2定義相互垂直之一X軸L1、一Y軸L2及一Z軸L3,該基板檢測機構3設於該基座2並包括一第一對位平台31及一第一檢測模組32,該第一對位平台31可沿該Z軸L3轉動並供置放該基板91,該基板91設有複數導電線路911,該第一檢測模組32供檢測掃描該基板91,該框架檢測機構4設於該基座2並包括一第二對位平台41及一第二檢測模組42,該第二對位平台41可沿該Z軸L3轉動並供置放框架92,於本實施例中該半導體元件922為LED晶粒,該第二檢測模組42供檢測掃描該框架92,該第二對位平台41供將該框架92轉動並對位至一第二預定角度,該導電線路911或該等半導體元件922預先設有複數焊料93,於本實施例中該等焊料93設於該等半導體元件922,該第一拿取裝置11供將該第一預定角度之基板91及該框架92其中一者拿取,並貼合至另一者以形成該貼合成品94(於本實施例中該第一拿取裝置11係拿取該框架92並貼合於該基板91),要說明的是,於本實施例中該第一拿取裝置11可選擇性地沿X軸L1及Z軸L3移動,該第一拿取裝置11為吸盤,該第一拿取裝置11將該基板91與該框架92沿該Z軸L3之方向相貼合,以使該框架92之各該半導體元件922精準
貼合於該基板91之該等導電線路911,各該焊料93分別與該半導體元件922及該導電線路911相接觸。
The present invention further includes a laminating device 1, the laminating device 1 includes a
本發明另提供一種半導體元件雷射焊接方法,其提供一如上所述的半導體元件雷射焊接裝置,另包括以下步驟。貼合:該第一對位平台31供將該基板91轉動並對位至一第一預定角度,該第二對位平台41供將該框架92轉動並對位至一第二預定角度,該第一拿取裝置11供將對位至該第一預定角度之基板91及對位至該第二預定角度之框架4其中一者拿取,並貼合至另一者以形成該貼合成品94(於本實施例中該第一拿取裝置11係拿取該框架92並貼合於該基板91),值得一提的是,於本實施例中該貼合設備1另設有一貼合監控模組16(如圖11所示),以在貼合後之該基板91與該框架4進行監控,以確認該等半導體元件922順利地貼合於該等導電線路911。焊接:將該貼合成品94置放於該焊接載台7,該掃描模組81掃描定位該貼合成品94,並相對移動該雷射焊頭82與該焊接載台7之相對位置,以使該雷射焊頭82定位及對應該等半導體元件922並發出雷射光束穿透該貼膜921與該基板91至少其中一者,以加熱該等焊料93進行焊接。如圖9所示,當該基板91為可透光材質(如可透光之陶瓷板、玻璃板、PCB板或藍寶石板),該貼合成品94可以該基板91朝向該雷射焊頭82進行作業,雷射光束即可穿透該基板91進行焊接作業;當該基板91為不可透光材質(如不可透光之陶瓷板、矽晶板或PCB板),如圖10所示,該貼合成品94僅可以該貼膜921朝向該雷射焊頭82進行作業,雷射光束即穿透該貼膜921進行焊接作業,可依照該基板91之實際材質進行作業,該貼模921材質可為PE藍膜、UV膜或其它可透光且可撓曲之貼膜,該等半導體元件922無需上膠及可黏貼於該貼膜911,因此具有較簡單之製程,該等焊料93可以印刷、點膠、電鍍或蝕刻之方式設於該等半導體元件上,以提升效率,
較佳地該雷射光束之波長介於0.2um至11um,可具有最佳穿透貼膜921與該基板91之效果,以確實地加熱該等焊料93,其功率密度範圍介於1KW/cm2至10MW/cm2,加熱時間介於0.01至2000毫秒,於本實施例中最佳化的功率密度為100KW/cm2,加熱時間為0.05毫秒,雷射加熱過程可以調變雷射為脈衝式,其頻率範圍為1至100KHz,最佳化的條件為4KHz,佔空比為15%,於本實施例中該焊接模組8使用雷射控制卡送出電子訊號給雷射源,進行雷射頻率、佔空比、能量範圍調變。
The present invention also provides a laser welding method for semiconductor devices, which provides a laser welding device for semiconductor devices as described above, and further includes the following steps. Fitting: The
具體而言,該座體6另設有一沿該X軸L1延伸之第一軌道61及一沿該Y軸L2延伸之第二軌道62,該第二軌道62滑設於該第一軌道61,該焊接載台7滑設於該第二軌道62,以使該焊接載台7可相對該焊接模組8沿該X軸L1及Y軸L2移動,以使該焊接模組8之掃描模組81可掃描對位該貼合成品94。
Specifically, the
進一步的說,該雷射焊頭8可根據該掃描模組81所掃瞄出之該等半導體元件922及該等導電線路911之分佈位置及資訊而將設定雷射光束所照射之位置、分佈,或者可根據半導體業者所預先設定要焊接之位置資訊而進行焊接,可依照實際使用需求而進行焊接作業,不以此為限。且該雷射焊頭92具有聚焦準直功能,可使雷射光束聚焦在焊料93上,該半導體元件922受到熱傳導之升溫效率較慢,以防止半導體元件922過熱受損,詳細的說,其中雷射掃描座標取得方式,依該等導電線路911之線路特徵點進行轉正對位、取得基準起始座標,有以下3種方座標取得方式進行加工:1.可依該第一檢測模組32及該第二檢測模組42對該基板91及該框架92做全域的影像掃描定位取得該等焊料93之座標,供該掃描模組81依此座標進行移動加工,2.可匯入線路圖檔座標,供掃該掃描模組81依此座標進行移動加工,3.可輸入陣列數量、間隔距離,供該掃描模組81依此座標進行移動加工。
Furthermore, the laser welding head 8 can set the position and distribution of the laser beam irradiated by the laser beam according to the distribution position and information of the
另外,該焊接模組另設有一聚焦單元83,該聚焦單元83可以焊接載台7之平面為雷射最小聚焦基礎原點,輸入考慮該基板91之厚度、該等焊料93之直徑,依光學聚焦設計為計算基礎,自動調整雷射聚焦位置,原理為雷射聚光截面,涵蓋該等導電線路911之接點全域為概念,進行調整離焦。
In addition, the welding module is additionally provided with a focusing
於本實施例中該座體6另設有一可相對該焊接載台7沿該Z軸L3移動之升降裝置63,該焊接模組8設於該升降裝置63以進行升降。
In this embodiment, the
於本實施例中該基座另設有一基板拿取手臂12及一第一粗對位平台14,該基板拿取手臂12先將該基板91置放於該第一粗對位平台14進行粗對位後,再將該基板91置放於該第一對位平台31,可節省該第一對位平台31之作業時間。
In this embodiment, the base is additionally provided with a
該基座2另設有一框架拿取手臂13及一中繼平台15,該中繼平台15及該框架拿取手臂13可沿該Y軸L2方向移動,該框架拿取手臂13供自一框架盒座96拿取一該框架92並置放於該中繼平台15,該第一拿取裝置11再將該框架92自該中繼平台15拿取並置放於該第二對位平台41,該第一拿取裝置11另供將該貼合成品94自該第二對位平台41拿取,並置放回該中繼平台15,該框架拿取手臂13即可將該貼合成品94自該中繼平台15拿取並放置於該框架盒座96,以供雷射焊接製程使用。於本實施例中該框架拿取手臂13為一夾具131,該框架拿取手臂13可選擇性地沿該Y軸L2移動。
The
另外一提的是,於本實施例中該第一檢測模組32與該第二檢測模組42為感光耦合元件(CCD)感應器,該第一檢測模組32供掃描對位該基板91之導電線路911,該第二檢測模組42供掃描對位該等半導體元件922之排列,以達到準確對位之效果。
In addition, in this embodiment, the
綜上,本發明之半導體元件雷射焊接裝置及方法可快速將排列於該框件上之該等半導體元件貼合於該基板之該等導電線路,以進行雷射焊接將該等半導體元件與該等導電線路進行焊接,利用貼膜可一次貼合巨量(數千至數千萬顆)之1至80密耳等小尺寸之半導體元件之貼合,並藉由雷射焊接焊接巨量半導體元件,因此可提高半導體產業之製程速度及降低成本。 In summary, the semiconductor device laser welding device and method of the present invention can quickly attach the semiconductor devices arranged on the frame to the conductive lines of the substrate for laser welding of the semiconductor devices and These conductive circuits are soldered, and a huge amount (thousands to tens of millions) of small-sized semiconductor components ranging from 1 to 80 mils can be attached at a time using the film, and a huge amount of semiconductors can be welded by laser welding Therefore, it can increase the process speed and reduce the cost of the semiconductor industry.
82:雷射焊頭 82: Laser welding head
83:聚焦單元 83: Focusing unit
91:基板 91: substrate
93:焊料 93: Solder
911:導電線路 911: Conductive circuit
921:貼膜 921: film
922:半導體元件 922: Semiconductor components
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