TWI734172B - Insulating soft magnetic film laminated circuit board - Google Patents

Insulating soft magnetic film laminated circuit board Download PDF

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TWI734172B
TWI734172B TW108129524A TW108129524A TWI734172B TW I734172 B TWI734172 B TW I734172B TW 108129524 A TW108129524 A TW 108129524A TW 108129524 A TW108129524 A TW 108129524A TW I734172 B TWI734172 B TW I734172B
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soft magnetic
insulating soft
resin
magnetic film
insulating
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TW202110292A (en
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劉士來
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肥特補科技股份有限公司
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Priority to CN202010538333.5A priority patent/CN112391077A/en
Priority to CN202021091905.1U priority patent/CN212357119U/en
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Abstract

本發明提出一種絕緣軟磁膜積層電路板,包含:一基板、一絕緣軟磁膜及一防焊膜,其中該絕緣軟磁膜係直接覆蓋在一設置於該基板表面的電路圖案上並與該電路圖案接觸,該防焊膜係覆蓋於該絕緣軟磁膜相反於該基板的一側。該絕緣軟磁膜係為電氣絕緣的吸波層,尤其是覆蓋在電路板的電路圖案上時不會造成電路的短路,且於高頻段有大的吸波效果,使得覆蓋有吸波層的該絕緣軟磁膜積層電路板在高頻段能有效地消除所受的電磁干擾。The present invention provides an insulating soft magnetic film laminated circuit board, comprising: a substrate, an insulating soft magnetic film, and a solder mask, wherein the insulating soft magnetic film directly covers a circuit pattern provided on the surface of the substrate and interacts with the circuit pattern In contact, the solder resist film covers the side of the insulating soft magnetic film opposite to the substrate. The insulating soft magnetic film is an electrically insulating wave absorbing layer, especially when it is covered on the circuit pattern of the circuit board, it will not cause short circuit of the circuit, and has a large wave absorbing effect at high frequency, so that the wave absorbing layer covered Insulating soft magnetic film laminated circuit boards can effectively eliminate electromagnetic interference in high frequency bands.

Description

絕緣軟磁膜積層電路板Insulating soft magnetic film laminated circuit board

本發明係有關於一種具有電磁干擾(Electromagnetic Interference,EMI)防制的絕緣軟磁膜積層電路板。The invention relates to an insulating soft magnetic film laminated circuit board with electromagnetic interference (EMI) prevention.

目前常用的主機裝置所安裝的主機板(一般為電路板)上,多具有例如中央處理器等容易發出高頻雜訊的電子元件,以及眾多易受外界干擾的其它元件(例如晶片)與電路。為了使電子元件避免干擾其他元件及電路的運作,以及避免電子元件與其他元件及電路的彼此干擾,因此需要電磁干擾防制,以保護電子元件與其他元件及電路。At present, the motherboard (usually a circuit board) installed in the commonly used host device usually has electronic components such as a central processing unit that are prone to high-frequency noise, as well as many other components (such as chips) and circuits that are susceptible to external interference. . In order to prevent electronic components from interfering with the operation of other components and circuits, and to avoid mutual interference between electronic components and other components and circuits, electromagnetic interference prevention is required to protect the electronic components and other components and circuits.

主機板通常佈設有眾多電路形成電路圖案,電磁干擾防制的方式之一則是將屏蔽層直接覆蓋於主機板的電路圖案且設置於高頻的電子元件與其它元件之間。目前已知的電磁干擾防制的屏蔽層的設置方式之一,係以通常由導電顆粒、樹脂及溶劑所組成的導電油墨,整個覆蓋於電子元件或晶片形成導電層以做為電磁干擾屏蔽層。然而在高頻段(不小於1GHz)被電磁干擾屏蔽層所屏蔽的電磁波,由於並未被吸收消除,因此高頻的電子元件與其它元件之間彼此會互相干擾,這反而形成了新的電磁干擾。更何況很難避免的是,導電油墨所形成的電磁干擾屏蔽層很容易同時覆蓋電子元件或晶片周圍的兩條相鄰的電路,這造成了電路的短路而導致主機板報廢。The motherboard is usually equipped with many circuits to form a circuit pattern. One of the ways to prevent electromagnetic interference is to directly cover the circuit pattern of the motherboard with a shielding layer and set it between high-frequency electronic components and other components. One of the currently known ways to set up a shielding layer for electromagnetic interference prevention is to use a conductive ink usually composed of conductive particles, resin and solvent, and cover the entire electronic component or chip to form a conductive layer as an electromagnetic interference shielding layer. . However, the electromagnetic waves shielded by the electromagnetic interference shielding layer in the high frequency range (not less than 1GHz) are not absorbed and eliminated, so high-frequency electronic components and other components will interfere with each other, which instead forms a new electromagnetic interference. . What's more, it is difficult to avoid that the electromagnetic interference shielding layer formed by the conductive ink can easily cover two adjacent circuits around the electronic component or chip at the same time, which causes the circuit to be short-circuited and the motherboard is scrapped.

再者,依據國際標準IEC62333的測試,S21參數為透射係數而S11參數為反射係數,由導電油墨所形成的電磁干擾屏蔽層的測試結果,雖然於高頻段(不小於1.0GHz)有大的S21屏蔽效果,但S11趨近於零,這表示電磁波不但完全沒有被電磁干擾屏蔽層衰減,反而因為接近於全反射而可能形成了新的電磁干擾。因此,覆蓋有前述電磁干擾屏蔽層的主機板在高頻段無法有效地消除所受的電磁干擾。Furthermore, according to the test of the international standard IEC62333, the S21 parameter is the transmission coefficient and the S11 parameter is the reflection coefficient. The test result of the electromagnetic interference shielding layer formed by conductive ink, although there is a large S21 in the high frequency band (not less than 1.0GHz) The shielding effect, but S11 is close to zero, which means that the electromagnetic wave is not attenuated by the electromagnetic interference shielding layer at all, but because it is close to total reflection, new electromagnetic interference may be formed. Therefore, the motherboard covered with the aforementioned electromagnetic interference shielding layer cannot effectively eliminate the electromagnetic interference received in the high frequency range.

本發明係考量上述情況,目的在於提供一種具有電磁干擾防制的絕緣軟磁膜積層電路板。The present invention takes the above situation into consideration, and aims to provide an insulating soft magnetic film laminated circuit board with electromagnetic interference prevention.

本發明所提出的一種絕緣軟磁膜積層電路板,包含:一基板、一絕緣軟磁膜及一防焊膜,其中該絕緣軟磁膜係直接覆蓋在一設置於該基板表面的電路圖案上並與該電路圖案接觸,該防焊膜係覆蓋於該絕緣軟磁膜相反於該基板的一側;該絕緣軟磁膜,係包含一樹脂層及分散於該樹脂層中的複數個絕緣軟磁顆粒;該絕緣軟磁顆粒具有一芯部和包圍該芯部的周圍的一殼部,該絕緣軟磁顆粒的形狀為球狀,粒徑係介於1μm~50μm,該芯部為鐵矽鉻合金球,以鐵矽鉻合金球為100wt%為計量,該芯部包含85wt%~95wt%的鐵、1wt%~10wt%的矽及1wt%~5wt%的鉻,該殼部為磷酸鹽皮膜、矽酸鹽皮膜或二氧化矽皮膜,該殼部的絕緣電阻值為大於5x109 Ω;該殼部及該樹脂層係不同的材料所構成;該殼部的重量為該芯部的重量的1%~10%;且,以複數個該絕緣軟磁顆粒及該樹脂層為100wt%為計量,該絕緣軟磁膜係包含有55.56~95.74wt%的複數個該絕緣軟磁顆粒;該樹脂層係由一第一樹脂及一第二樹脂所構成,該殼部的材料、該第一樹脂及該第二樹脂係彼此不相同;且,以複數個該絕緣軟磁顆粒、該第一樹脂及該第二樹脂為100wt%為計量,該絕緣軟磁膜包含有3.06~33.33wt%的該第一樹脂及1.01~11.11wt%的該第二樹脂;該第一樹脂係為酚醛環氧樹脂,該第二樹脂係為苯酚與甲醛縮水甘油醚的聚合物。An insulating soft magnetic film laminated circuit board provided by the present invention includes: a substrate, an insulating soft magnetic film, and a solder mask, wherein the insulating soft magnetic film directly covers a circuit pattern provided on the surface of the substrate and interacts with the When the circuit pattern is in contact, the solder resist film covers the side of the insulating soft magnetic film opposite to the substrate; the insulating soft magnetic film includes a resin layer and a plurality of insulating soft magnetic particles dispersed in the resin layer; the insulating soft magnetic film The particle has a core and a shell surrounding the core. The shape of the insulating soft magnetic particle is spherical, and the particle size is between 1 μm and 50 μm. The alloy ball is measured at 100wt%. The core contains 85wt%~95wt% iron, 1wt%~10wt% silicon and 1wt%~5wt% chromium. The shell part is a phosphate film, a silicate film or two Silicon oxide film, the insulation resistance value of the shell is greater than 5x10 9 Ω; the shell and the resin layer are made of different materials; the weight of the shell is 1%-10% of the weight of the core; and , Taking a plurality of the insulating soft magnetic particles and the resin layer as 100wt%, the insulating soft magnetic film contains 55.56~95.74wt% of the plurality of insulating soft magnetic particles; the resin layer is composed of a first resin and a first resin It is composed of two resins, the material of the shell part, the first resin and the second resin are different from each other; and a plurality of the insulating soft magnetic particles, the first resin and the second resin are 100wt% as the measurement, The insulating soft magnetic film contains 3.06~33.33wt% of the first resin and 1.01~11.11wt% of the second resin; the first resin is phenolic epoxy resin, and the second resin is phenol and formaldehyde glycidol Ether polymer.

所述該絕緣軟磁膜積層電路板,其中該絕緣軟磁膜積層電路板更包含兩個電子元件,該絕緣軟磁膜係設置於兩個該電子元件之間。In the above-mentioned insulating soft magnetic film laminated circuit board, the insulating soft magnetic film laminated circuit board further includes two electronic components, and the insulating soft magnetic film is arranged between the two electronic components.

所述該絕緣軟磁膜積層電路板,其中該絕緣軟磁膜係設置於兩個該電子元件之間且不覆蓋任一個該電子元件,該絕緣軟磁膜也不與任一個該電子元件接觸。In the laminated circuit board of the insulating soft magnetic film, the insulating soft magnetic film is disposed between the two electronic components and does not cover any of the electronic components, and the insulating soft magnetic film does not contact any of the electronic components.

前述該絕緣軟磁膜積層電路板,其中該絕緣軟磁膜係由一種絕緣軟磁油墨所製備,該絕緣軟磁油墨包含:50wt%~90wt%的複數個該絕緣軟磁顆粒、3wt%~30wt%的該第一樹脂、1wt%~10wt%的該第二樹脂及1wt%~10wt%的一溶劑。In the aforementioned insulating soft magnetic film laminated circuit board, wherein the insulating soft magnetic film is prepared by an insulating soft magnetic ink, the insulating soft magnetic ink contains: 50wt%~90wt% of the insulating soft magnetic particles, 3wt%~30wt% of the first A resin, 1wt%-10wt% of the second resin, and 1wt%-10wt% of a solvent.

前述該絕緣軟磁膜積層電路板,其中該溶劑為乙二醇丁醚醋酸酯。In the aforementioned insulating soft magnetic film laminated circuit board, the solvent is ethylene glycol butyl ether acetate.

前述該絕緣軟磁膜積層電路板,其中該絕緣軟磁油墨係可以包含一分散劑,以複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑為100wt%為計量,該分散劑係為0.001wt%~0.01wt%,該分散劑係為3-環氧丙氧丙基三甲氧基矽烷。In the aforementioned insulating soft magnetic film laminated circuit board, the insulating soft magnetic ink may include a dispersant, and the amount of the insulating soft magnetic particles, the first resin, the second resin, and the solvent is 100% by weight. It is 0.001wt%~0.01wt%, and the dispersant is 3-glycidoxypropyltrimethoxysilane.

前述該絕緣軟磁膜積層電路板,其中該絕緣軟磁油墨係可以包含一消泡劑,以複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑為100wt%為計量,該消泡劑係為0.1wt~0.2wt%,該消泡劑係可以為有機矽類消泡劑或聚合物類消泡劑。In the aforementioned insulating soft magnetic film laminated circuit board, the insulating soft magnetic ink may include a defoaming agent, and the defoaming agent is measured by 100 wt% of the insulating soft magnetic particles, the first resin, the second resin, and the solvent. The foaming agent is 0.1wt% to 0.2wt%, and the defoaming agent can be an organosilicon defoaming agent or a polymer defoaming agent.

由於前述的該絕緣軟磁膜係為電氣絕緣(表面電阻值不小於1.0x109 歐姆/平方(Ω/□))的電磁波的吸波層,尤其是大面積地覆蓋在電路板的電路圖案上時,不會造成電路的短路,且於高頻段(不小於1.0GHz)有大的衰減信號,使得覆蓋有該絕緣軟磁膜(吸波層)的該絕緣軟磁膜積層電路板在高頻段能有效地消除所受的電磁干擾。另外,該絕緣軟磁膜,其對於在高頻段(不小於1GHz)幅射的電磁波,電磁波會被該絕緣軟磁膜中所含的磁性材料吸收而衰減,所以在高頻段(不小於1GHz)顯示極佳的S21(透射係數)屏蔽效果,當該絕緣軟磁膜的厚度為1mm時,S21有約1~15dB的屏蔽衰減效果;當該絕緣軟磁膜的厚度為2.6mm時,S11(反射係數)呈現出在2.64GHz可達超過20dB的反射衰減效果。因此,本發明之該絕緣軟磁膜積層電路板,在高頻段能夠有效地消除所受的電磁干擾。然而習知電磁干擾屏蔽層在高頻段(不小於1GHz)下電磁干擾屏蔽層顯示S11幾乎為零,表示其為將電磁波全反射而不具吸波(不具吸收電磁波)的效果。雖然電磁干擾屏蔽層於高頻段(不小於1.0GHz)有大的S21屏蔽效果,但因為S11趨近於零,這表示電磁波不但完全沒有被電磁干擾屏蔽層衰減,反而因為接近於將電磁波全反射而可能形成了新的電磁干擾。因此,覆蓋有前述電磁干擾屏蔽層的主機板在高頻段並無法有效地消除所受的電磁干擾。Since the aforementioned insulating soft magnetic film is an electrically insulating (surface resistance value of not less than 1.0x10 9 ohm/square (Ω/□)) electromagnetic wave absorbing layer, especially when covering a large area on the circuit pattern of the circuit board , Will not cause short circuit of the circuit, and has a large attenuation signal in the high frequency band (not less than 1.0GHz), so that the insulating soft magnetic film laminated circuit board covered with the insulating soft magnetic film (wave-absorbing layer) can effectively Eliminate electromagnetic interference. In addition, the insulating soft magnetic film, for electromagnetic waves radiated in the high frequency range (not less than 1GHz), the electromagnetic waves will be absorbed and attenuated by the magnetic material contained in the insulating soft magnetic film, so it shows extremes in the high frequency range (not less than 1GHz). Good S21 (transmission coefficient) shielding effect. When the thickness of the insulating soft magnetic film is 1mm, S21 has a shielding attenuation effect of about 1~15dB; when the thickness of the insulating soft magnetic film is 2.6mm, S11 (reflection coefficient) presents It has a reflection attenuation effect of more than 20dB at 2.64GHz. Therefore, the insulated soft magnetic film laminated circuit board of the present invention can effectively eliminate the electromagnetic interference received in the high frequency range. However, the conventional electromagnetic interference shielding layer shows that S11 is almost zero in the high frequency band (not less than 1 GHz), which means that it totally reflects electromagnetic waves without the effect of absorbing electromagnetic waves. Although the electromagnetic interference shielding layer has a large S21 shielding effect in the high frequency band (not less than 1.0GHz), because S11 is close to zero, this means that the electromagnetic wave is not attenuated by the electromagnetic interference shielding layer at all, but because it is close to the total reflection of the electromagnetic wave It may form a new electromagnetic interference. Therefore, the motherboard covered with the aforementioned electromagnetic interference shielding layer cannot effectively eliminate the electromagnetic interference received in the high frequency range.

為使審查人員更容易明瞭本發明之技術內容、特點與功效,配合實施例與比較例的呈現,將可更清楚的說明,但本發明不受該些實施例所限定。此外,本說明書及申請專利範圍中使用「~」表示數值範圍是指涵蓋「~」前後所記載數值做為下限值及上限值的範圍;本說明書及申請專利範圍中使用「wt%」,係指重量百分比;本說明書及申請專利範圍中使用「粒徑」,係指利用雷射粒徑分析儀所測定之粒徑。In order to make it easier for the examiner to understand the technical content, features and effects of the present invention, it will be explained more clearly in conjunction with the presentation of the embodiments and comparative examples, but the present invention is not limited by these embodiments. In addition, the use of "~" in this specification and the scope of patent application indicates that the numerical range refers to the range that covers the values before and after the "~" as the lower limit and upper limit; the use of "wt%" in this specification and the scope of patent application , Refers to the percentage by weight; the "particle size" used in this specification and the scope of the patent application refers to the particle size measured by a laser particle size analyzer.

請同時參閱第1圖至第4圖,本創作之一種絕緣軟磁膜積層電路板3包含:一基板31、一絕緣軟磁膜100及一防焊膜33,該絕緣軟磁膜100係由一種絕緣軟磁油墨所製備,該絕緣軟磁油墨,包含:50wt%~90wt%的複數個絕緣軟磁顆粒、3wt%~30wt%的一第一樹脂、1wt%~10wt%的一第二樹脂及1wt%~10wt%的一溶劑。Please refer to Figs. 1 to 4 at the same time. An insulating soft magnetic film laminated circuit board 3 of this creation includes: a substrate 31, an insulating soft magnetic film 100, and a solder mask 33. The insulating soft magnetic film 100 is made of an insulating soft magnetic Ink is prepared, the insulating soft magnetic ink includes: 50wt%~90wt% of a plurality of insulating soft magnetic particles, 3wt%~30wt% of a first resin, 1wt%~10wt% of a second resin, and 1wt%~10wt% Of a solvent.

請參閱第1圖,前述之該絕緣軟磁顆粒1具有一芯部11和包圍該芯部的周圍的一殼部12。其中,該芯部11為軟磁性材料(鐵磁性合金材料)所構成之軟磁性芯部,該芯部11可以為:磁性不鏽鋼(Fe-Cr-Al-Si合金)、鐵矽鋁合金(Fe-Si-Al合金)、鎳鐵合金(Fe-Ni合金)、鐵矽銅合金(Fe-Cu-Si合金)、鐵矽合金Fe-Si合金、鐵矽鉻鎳合金(Fe-Si-Cr-Ni合金)、鐵矽鉻合金(Fe-Si-Cr合金)或鐵氧體等,而就本發明的磁特性方面而言,較佳為鐵矽鉻合金(Fe-Si-Cr合金)。該殼部12係為絕緣材料所構成,該殼部12可以為:磷酸鹽皮膜、矽酸鹽皮膜或二氧化矽皮膜,該殼部12係藉由將該芯部11的重量的1%~10%進行一表面絕緣處理而形成,所述該表面絕緣處理例如為該殼部12係藉由磷化處理該芯部11或矽酸鈉鹽披覆該芯部11來完成。也就是說,該殼部12的重量為該芯部的重量的1%~10%。前述磷化處理係利用磷酸或磷酸鹽溶液與前述該芯部11所列舉的合金的表面之鐵原子進行置換反應(Conversion Reaction)反應,以形成磷酸鹽皮膜。另外也可以利用矽酸鈉鹽所形成之水玻璃絕緣材料,直接加成披覆(Overlay Coating)於該芯部11之表面,經乾燥除水後以形成矽酸鹽皮膜。再者,也可以矽烷單體聚合形成聚矽氧烷(polysiloxane)分子,然後直接加成披覆於該芯部11之表面,經乾燥除水後以形成二氧化矽皮膜。特別說明的是,前述該殼部12的絕緣電阻值為大於5GΩ(5x109 Ω)。前述之該絕緣軟磁顆粒1的形狀可以為球狀、扁平狀或纖維狀,於本發明中較佳為球狀,粒徑係介於1μm~50μm,也就是說該芯部11可以為鐵矽鉻合金球;且,以鐵矽鉻合金為100wt%為計量,該芯部包含85wt%~95wt%的鐵、1wt%~10wt%的矽及1wt%~5wt%的鉻。Please refer to Figure 1. The aforementioned insulating soft magnetic particle 1 has a core 11 and a shell 12 surrounding the core. Wherein, the core 11 is a soft magnetic core composed of a soft magnetic material (ferromagnetic alloy material), and the core 11 can be: magnetic stainless steel (Fe-Cr-Al-Si alloy), iron-silicon aluminum alloy (Fe -Si-Al alloy), nickel-iron alloy (Fe-Ni alloy), iron-silicon-copper alloy (Fe-Cu-Si alloy), iron-silicon alloy Fe-Si alloy, iron-silicon chromium-nickel alloy (Fe-Si-Cr-Ni) Alloy), Fe-Si-Cr alloy (Fe-Si-Cr alloy) or ferrite, etc., and in terms of the magnetic characteristics of the present invention, Fe-Si-Cr alloy (Fe-Si-Cr alloy) is preferred. The shell portion 12 is made of an insulating material. The shell portion 12 can be a phosphate film, a silicate film or a silicon dioxide film. The shell portion 12 is made of 1% of the weight of the core 11 10% is formed by performing a surface insulation treatment, for example, the shell part 12 is formed by phosphating the core part 11 or coating the core part 11 with sodium silicate. In other words, the weight of the shell portion 12 is 1%-10% of the weight of the core portion. The aforementioned phosphating treatment utilizes phosphoric acid or a phosphate solution to carry out a conversion reaction (Conversion Reaction) reaction with the iron atoms on the surface of the alloy listed in the aforementioned core portion 11 to form a phosphate film. In addition, the water glass insulating material formed by sodium silicate salt can be directly added to overlay (Overlay Coating) on the surface of the core 11 and dried to remove water to form a silicate film. Furthermore, silane monomers can also be polymerized to form polysiloxane molecules, which are then directly added to coat the surface of the core 11, and dried to remove water to form a silicon dioxide film. In particular, the insulation resistance value of the aforementioned shell portion 12 is greater than 5 GΩ (5× 10 9 Ω). The shape of the aforementioned insulating soft magnetic particles 1 can be spherical, flat or fibrous. In the present invention, the shape is preferably spherical, and the particle size is between 1 μm and 50 μm. That is to say, the core 11 can be ferrosilicon. Chromium alloy ball; and, based on the iron-silicon-chromium alloy as 100wt%, the core contains 85wt%~95wt% iron, 1wt%~10wt% silicon and 1wt%~5wt% chromium.

前述之該第一樹脂可以為酚醛環氧樹脂(phenolic epoxy resin)或鄰甲酚醛環氧樹脂(O-Methyl phenolic epoxy resin)。較佳地,該第一樹脂為酚醛環氧樹脂。The aforementioned first resin may be phenolic epoxy resin or O-Methyl phenolic epoxy resin. Preferably, the first resin is novolac epoxy resin.

前述之該第二樹脂可以為苯酚與甲醛縮水甘油醚的聚合物(CAS Number: 28064-14-4)( Phenol polymer with formaldehyde glycidyl ether)、雙酚F型環氧樹脂或線型醛環氧樹脂。The aforementioned second resin may be a polymer of phenol and formaldehyde glycidyl ether (CAS Number: 28064-14-4) (Phenol polymer with formaldehyde glycidyl ether), bisphenol F epoxy resin or linear aldehyde epoxy resin.

該第一樹脂與該第二樹脂係不相同,且該殼部的材料、該第一樹脂及該第二樹脂係彼此不相同。The first resin and the second resin series are different, and the material of the shell part, the first resin and the second resin series are different from each other.

前述之該溶劑可以為乙二醇丁醚醋酸酯、乙二醇***醋酸酯 、雙乙二醇丁醚醋酸酯 、雙乙二醇***醋酸或1,1,3-三甲基環己烯酮。The aforementioned solvent can be ethylene glycol butyl ether acetate, ethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, diethylene glycol ethyl ether acetic acid or 1,1,3-trimethylcyclohexenone .

為了提升複數個該絕緣軟磁顆粒在該絕緣軟磁油墨中的分散性,該絕緣軟磁油墨係可以包含一分散劑。以複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑為100wt%為計量,該分散劑係為0.001wt%~0.01wt%。該分散劑係可以為乙烯基三甲氧基矽烷、3-環氧丙氧丙基三甲氧基矽烷、p-苯乙烯基三甲氧基矽烷、3-丙烯醯氧丙基三甲氧基矽烷或3-巰基丙基甲基二甲氧基矽烷。In order to improve the dispersibility of the insulating soft magnetic particles in the insulating soft magnetic ink, the insulating soft magnetic ink may contain a dispersant. Taking a plurality of the insulating soft magnetic particles, the first resin, the second resin, and the solvent as 100 wt%, the dispersant is 0.001 wt% to 0.01 wt%. The dispersant system can be vinyl trimethoxysilane, 3-glycidoxypropyl trimethoxysilane, p-styryl trimethoxysilane, 3-propenoxypropyl trimethoxysilane or 3- Mercaptopropylmethyldimethoxysilane.

為了降低攪拌過程中,該絕緣軟磁油墨所產生氣泡的量,該絕緣軟磁油墨係可以包含一消泡劑。以複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑為100wt%為計量,該消泡劑係為0.1wt~0.2wt%。該消泡劑係可以為有機矽類消泡劑或聚合物類消泡劑。In order to reduce the amount of bubbles generated in the insulating soft magnetic ink during the stirring process, the insulating soft magnetic ink may contain a defoaming agent. Taking a plurality of the insulating soft magnetic particles, the first resin, the second resin, and the solvent as 100 wt%, the defoaming agent is 0.1 wt% to 0.2 wt%. The defoamer can be an organosilicon defoamer or a polymer defoamer.

本發明之該絕緣軟磁油墨之製備:The preparation of the insulating soft magnetic ink of the present invention:

本發明之該絕緣軟磁油墨可以藉由包含以下步驟之一種絕緣軟磁油墨的製造方法所製造:(1)依據設定的各別複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑的重量百分比準備材料;(2)混合複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑於室溫下以行星式攪拌機攪拌混合均勻,並選擇性地可加入適當的分散劑及/或消泡劑添加劑以完成該絕緣軟磁油墨。The insulating soft magnetic ink of the present invention can be manufactured by a manufacturing method of insulating soft magnetic ink including the following steps: (1) According to a set of a plurality of the insulating soft magnetic particles, the first resin, the second resin and the The weight percentage of the solvent to prepare the material; (2) Mix a plurality of the insulating soft magnetic particles, the first resin, the second resin and the solvent at room temperature with a planetary mixer to stir and mix evenly, and optionally add appropriate Dispersant and/or defoamer additives to complete the insulating soft magnetic ink.

本發明之該絕緣軟磁膜之製備:The preparation of the insulating soft magnetic film of the present invention:

係藉由下述之一種絕緣軟磁膜的製備方法以製備該絕緣軟磁膜:於未組裝晶片及元件且具有電路圖案的一主機電路板上利用網版印刷方式或不鏽鋼板的刮刀塗佈方式,將該絕緣軟磁油墨塗佈於該主機電路板的電路圖案上以形成一預定大小及形狀的塗層,再利用烘箱以一預定的溫度(例如150o C)乾燥一預定的時間(例如30分鐘)以將該溶劑揮發並形成片狀的該絕緣軟磁膜,該絕緣軟磁膜之厚度為100μm ~2.6mm;較佳地該絕緣軟磁膜之厚度為100μm ~300μm。請一併參閱第2圖,特別說明的是,該絕緣軟磁膜100係包含一樹脂層2及分散於該樹脂層中的複數個該絕緣軟磁顆粒1;其中,該樹脂層2係由該第一樹脂及該第二樹脂所構成,該殼部12的材料、該第一樹脂及該第二樹脂係彼此不相同。請一併參閱第3圖,換言之,該絕緣軟磁膜積層電路板3至少包含:該基板31、設置於該基板31表面的該電路圖案32及直接覆蓋在該電路圖案32上並與該電路圖案32接觸的該絕緣軟磁膜100。The insulating soft magnetic film is prepared by the following preparation method of the insulating soft magnetic film: using a screen printing method or a stainless steel plate scraper coating method on a host circuit board that has not assembled chips and components and has a circuit pattern, The insulating soft magnetic ink is coated on the circuit pattern of the host circuit board to form a coating of a predetermined size and shape, and then dried in an oven at a predetermined temperature (such as 150 o C) for a predetermined time (such as 30 minutes) ) To volatilize the solvent to form the insulating soft magnetic film in a sheet shape, the thickness of the insulating soft magnetic film is 100 μm ~ 2.6 mm; preferably, the thickness of the insulating soft magnetic film is 100 μm ~ 300 μm. Please refer to FIG. 2 together. It is particularly noted that the insulating soft magnetic film 100 includes a resin layer 2 and a plurality of the insulating soft magnetic particles 1 dispersed in the resin layer; wherein, the resin layer 2 is formed by the first resin layer 2 It is composed of a resin and the second resin, and the material of the shell portion 12, the first resin and the second resin are different from each other. Please refer to FIG. 3 together. In other words, the insulating soft magnetic film laminated circuit board 3 at least includes: the substrate 31, the circuit pattern 32 disposed on the surface of the substrate 31, and directly covering the circuit pattern 32 and interacting with the circuit pattern 32 in contact with the insulating soft magnetic film 100.

本發明之使用該絕緣軟磁油墨所製作的該絕緣軟磁膜的效果評估與測試:The effect evaluation and test of the insulating soft magnetic film made by using the insulating soft magnetic ink of the present invention:

該絕緣軟磁膜係藉由成膜性測試以評估成膜性;該絕緣軟磁膜係藉由表面電阻量測以評估該絕緣軟磁膜係是否為電氣絕緣;該絕緣軟磁膜係藉由吸波特性量測S11參數及S21參數以評估電磁波被該絕緣軟磁膜吸收的量。The insulating soft magnetic film is evaluated by film-forming property test; the insulating soft magnetic film is measured by surface resistance to evaluate whether the insulating soft magnetic film is electrically insulated; the insulating soft magnetic film is evaluated by attracting The S11 parameters and S21 parameters are measured to evaluate the amount of electromagnetic waves absorbed by the insulating soft magnetic film.

成膜性測試:Film formation test:

以目測法觀察該絕緣軟磁膜的表面:如果發現有龜裂現象,則判定為成膜性失敗並標示為「X」;如果沒有龜裂現象,但是表面有翹曲,則判定為成膜性可接受並標示為「△」;如果沒有龜裂現象及沒有翹曲,呈現平坦且附著良好,則判定為成膜性良好並標示為「○」。Observe the surface of the insulating soft magnetic film by visual inspection: if cracks are found, it is judged as film-forming failure and marked as "X"; if there is no cracking, but the surface is warped, it is judged as film-forming Acceptable and marked as "△"; if there is no cracking, no warpage, flat and good adhesion, it is judged as good film formation and marked as "○".

表面電阻量測:Surface resistance measurement:

針對上述該絕緣軟磁膜施以四點探針測量方式進行測量該絕緣軟磁膜的表面電阻值,於該絕緣軟磁膜共測量5個點後取平均值為記錄的表面電阻值。當表面電阻值不小於1.0x109 歐姆/平方(Ω/□)時,則判定為電氣絕緣並標示為「○」;當表面電阻值不小於1.0歐姆/平方(Ω/□)時,則判定為非電氣絕緣並標示為「X」,代表不符合該絕緣軟磁膜的電氣絕緣條件。The surface resistance of the insulating soft magnetic film is measured by a four-point probe measurement method for the above-mentioned insulating soft magnetic film. After measuring a total of 5 points on the insulating soft magnetic film, the average value is taken as the recorded surface resistance value. When the surface resistance value is not less than 1.0x10 9 ohm/square (Ω/□), it is judged as electrical insulation and marked as "○"; when the surface resistance value is not less than 1.0 ohm/square (Ω/□), it is judged It is non-electrically insulated and marked as "X", which means that it does not meet the electrical insulation conditions of the insulating soft magnetic film.

吸波特性量測:Absorption characteristics measurement:

採用Keysight E-5071C網路分析儀用傳輸線連接2個角錐天線以頻率2~18GHz的電磁波頻段執行S21參數(或稱為透射係數)及S11參數(或稱為反射係數)的量測。其中,S11參數的量測是將2個角錐天線放置在該絕緣軟磁膜的同一側,以測得電磁波反射衰減值即為S11參數,該絕緣軟磁膜的厚度為2.6mm;後述表一中的實施例及比較例中所測得的S11參數為負數,負數代表電磁波被吸收,將該S11參數達到最大值的頻率值(GHz)及此時的S11參數值(dB)的絕對值紀錄於後述表一中。S21參數的量測是將2個角錐天線分別放置在該絕緣軟磁膜的相反側,以測得電磁波各頻率透射衰減值即為S21參數,該絕緣軟磁膜的厚度為1.0mm;同樣地,後述表一中的實施例及比較例中所測得的S21參數為負數,負數代表電磁波被吸收,將該頻段的S21參數的絕對值的最大值與最小值紀錄於後述表一中。S11參數為負數,負數代表電磁波被吸收,因此S11參數絕對值的數值愈大,表示電磁波被該絕緣軟磁膜吸收的量愈大,也表示電磁波被該絕緣軟磁膜反射衰減的程度愈大,該絕緣軟磁膜愈有效地吸收電磁波,消除所受的電磁干擾;同樣地,S21參數為負數,負數代表電磁波被吸收,因此S21參數絕對值中的最大值的數值愈大,也表示該頻段電磁波被該絕緣軟磁膜屏蔽衰減的程度愈大,該絕緣軟磁膜越有效地屏蔽所受的電磁干擾。當S21參數中的絕對值中的最大值小於8dB時,則判定該絕緣軟磁膜屏蔽電磁波的能力差並標示為「X」;當S21參數中的絕對值的最大值大於或等於8dB並小於13.5dB時,則判定該絕緣軟磁膜屏蔽電磁波的能力為可接受並標示為「△」;當S21參數中的絕對值的最大值大於或等於13.5dB時,則判定該絕緣軟磁膜屏蔽電磁波的能力為良好並標示為「○」。The Keysight E-5071C network analyzer is used to connect two pyramid antennas with a transmission line to perform the measurement of S21 parameters (or transmission coefficient) and S11 parameters (or reflection coefficient) in the electromagnetic wave frequency band of 2-18GHz. Among them, the measurement of the S11 parameter is to place two pyramid antennas on the same side of the insulating soft magnetic film to measure the electromagnetic wave reflection attenuation value as the S11 parameter. The thickness of the insulating soft magnetic film is 2.6mm; The measured S11 parameter in the embodiment and the comparative example is a negative number, which means electromagnetic waves are absorbed. The frequency value (GHz) at which the S11 parameter reaches the maximum value and the absolute value of the S11 parameter value (dB) at this time are recorded in the following Table one. The measurement of S21 parameter is to place two pyramid antennas on the opposite side of the insulating soft magnetic film to measure the transmission attenuation value of each frequency of the electromagnetic wave, which is the S21 parameter. The thickness of the insulating soft magnetic film is 1.0mm; similarly, described later The measured S21 parameters in the examples and comparative examples in Table 1 are negative numbers, which represent electromagnetic waves are absorbed. The maximum and minimum absolute values of the S21 parameters in this frequency band are recorded in Table 1 below. The S11 parameter is a negative number. A negative number means electromagnetic waves are absorbed. Therefore, the larger the absolute value of the S11 parameter, the greater the amount of electromagnetic waves absorbed by the insulating soft magnetic film, and the greater the degree of reflection and attenuation of electromagnetic waves by the insulating soft magnetic film. The more effective the insulating soft magnetic film absorbs electromagnetic waves and eliminates electromagnetic interference. Similarly, the S21 parameter is a negative number, which means electromagnetic waves are absorbed. Therefore, the greater the absolute value of the S21 parameter, the greater the maximum value of the electromagnetic wave in this frequency band. The greater the degree of shielding attenuation of the insulating soft magnetic film, the more effectively the insulating soft magnetic film shields the electromagnetic interference received. When the maximum value of the absolute value of the S21 parameter is less than 8dB, it is determined that the insulating soft magnetic film has poor electromagnetic shielding ability and marked as "X"; when the maximum value of the absolute value of the S21 parameter is greater than or equal to 8dB and less than 13.5 dB, the ability of the insulating soft magnetic film to shield electromagnetic waves is determined to be acceptable and marked as "△"; when the maximum absolute value of the S21 parameter is greater than or equal to 13.5dB, the ability of the insulating soft magnetic film to shield electromagnetic waves is determined It is good and marked as "○".

總體評估結果:Overall assessment results:

在同一實施例或比較例中,成膜性測試、表面電阻量測及吸波特性量測中的任一者如果出現「X」,則總體評估結果為不良,並記錄為「X」;成膜性測試、表面電阻量測及吸波特性量測中的任一者如果出現「△」,則總體評估結果為可接受,並記錄為「△」;成膜性測試、表面電阻量測及吸波特性量測中,如果皆出現「○」,則總體評估結果為良好,並記錄為「○」。In the same embodiment or comparative example, if an "X" appears in any of the film formation test, the surface resistance measurement, and the measurement of the wave absorption characteristic, the overall evaluation result is bad and recorded as "X"; If “△” appears in any of the film formation test, surface resistance measurement, and absorption characteristic measurement, the overall evaluation result is acceptable and recorded as “△”; film formation test, surface resistance In the measurement and the measurement of the absorption characteristics, if "○" appears, the overall evaluation result is good and recorded as "○".

依據前述本發明之該絕緣軟磁油墨的製造方法,先調製成如下述表1中所記載之各實施例(實施例1~實施例9)所分別對應組成的該絕緣軟磁油墨,再藉由該絕緣軟磁膜的製備方法製備該絕緣軟磁膜,接著再進行該絕緣軟磁膜的效果評估與測試,並將結果紀錄於表一。其中,表一中的該絕緣軟磁顆粒其芯部為鐵矽鉻合金,而殼部為磷酸鹽皮膜;該第一樹脂為酚醛環氧樹脂;該第二樹脂為苯酚與甲醛縮水甘油醚的聚合物;該溶劑為乙二醇丁醚醋酸酯。表一中另外記載了比較例1及比較例2,比較例1及比較例2係仿造該絕緣軟磁油墨的製造方法、該絕緣軟磁膜的製備方法及該絕緣軟磁膜的效果評估與測試,其中除了比較例2係以導電顆粒取代各實施例的絕緣軟磁顆粒之外,其餘相同之處就不再重複說明。According to the manufacturing method of the insulating soft magnetic ink of the present invention, the insulating soft magnetic ink is firstly prepared into the insulating soft magnetic ink corresponding to the respective embodiments (Example 1 to Example 9) described in Table 1 below, and then by the Preparation method of insulating soft magnetic film The insulating soft magnetic film is prepared, and then the effect evaluation and test of the insulating soft magnetic film are performed, and the results are recorded in Table 1. Among them, the core of the insulating soft magnetic particles in Table 1 is iron-silicon-chromium alloy, and the shell is a phosphate film; the first resin is a phenolic epoxy resin; the second resin is a polymerization of phenol and formaldehyde glycidyl ether物; The solvent is ethylene glycol butyl ether acetate. Table 1 additionally records Comparative Example 1 and Comparative Example 2. Comparative Example 1 and Comparative Example 2 imitate the manufacturing method of the insulating soft magnetic ink, the preparation method of the insulating soft magnetic film, and the evaluation and testing of the effect of the insulating soft magnetic film. Except that Comparative Example 2 uses conductive particles to replace the insulating soft magnetic particles of each embodiment, the remaining similarities will not be repeated.

表一 項目 絕緣軟磁油墨的組成(wt%) 絕緣軟磁膜的特性(比較例1及實施例1~9) 電磁干擾屏蔽層的特性(比較例2) 導電顆粒 絕緣軟磁顆粒 第一樹脂 第二樹脂 溶劑 加總 成膜性 表面電阻Ω/□ 吸波特性@2~18GHz 總體評估結果 S11的絕對值 頻率值(GHz) 參數值(dB) S21的絕對值 最小值(dB)~最大值(dB) 實施例1 0 50 30 10 10 100 ○ 大於1010 5.60GHz 8.39dB △ 1.17~8.23 實施例2 0 60 20 10 10 100 ○ 大於1010 4.30GHz 10.16dB △ 1.41~9.88 實施例3 0 70 10 10 10 100 ○ 大於1010 3.20GHz 12.56dB △ 1.64~11.5 實施例4 0 80 3 10 7 100 ○ 大於1010 2.50GHz 16.33dB △ 1.88~13.1 實施例5 0 84 9 4 3 100 ○ 大於1010 2.75GHz 18.12dB ○ 1.95~13.7 實施例6 0 85 9 3 3 100 ○ 1x1010 2.64GHz 20.69dB ○ 2.0~14.0 實施例7 0 90 3 1 6 100 ○ 5x109 2.0GHz 18.1dB ○ 2.1~14.7 實施例8 0 90 3 5 2 100 ○ 5x109 2.0GHz 18.3dB ○ 2.1~14.7 實施例9 0 90 8 1 1 100 ○ 5x109 2.0GHz 18.2dB ○ 2.1~14.7 比較例1 0 95 3 1 1 100 X ○ 5x109 1.56GHz 12.6dB △ 2.4~12.5 X 比較例2 90 0 8 1 1 100 X X 1x100 5.60GHz 0.56dB X 2.15~7.30 X Table I project Composition of insulating soft magnetic ink (wt%) The characteristics of the insulating soft magnetic film (Comparative Example 1 and Examples 1-9) The characteristics of the electromagnetic interference shielding layer (Comparative Example 2) Conductive particles Insulating soft magnetic particles The first resin Second resin Solvent Add up Film formation Surface resistance Ω/□ Absorption characteristics @2~18GHz Overall assessment results S11 absolute frequency value (GHz) parameter value (dB) S21 absolute value minimum (dB) ~ maximum (dB) Example 1 0 50 30 10 10 100 ○ greater than 10 10 5.60GHz 8.39dB △ 1.17~8.23 Example 2 0 60 20 10 10 100 ○ greater than 10 10 4.30GHz 10.16dB △ 1.41~9.88 Example 3 0 70 10 10 10 100 ○ greater than 10 10 3.20GHz 12.56dB △ 1.64~11.5 Example 4 0 80 3 10 7 100 ○ greater than 10 10 2.50GHz 16.33dB △ 1.88~13.1 Example 5 0 84 9 4 3 100 ○ greater than 10 10 2.75GHz 18.12dB ○ 1.95~13.7 Example 6 0 85 9 3 3 100 ○ 1x10 10 2.64GHz 20.69dB ○ 2.0~14.0 Example 7 0 90 3 1 6 100 ○ 5x10 9 2.0GHz 18.1dB ○ 2.1~14.7 Example 8 0 90 3 5 2 100 ○ 5x10 9 2.0GHz 18.3dB ○ 2.1~14.7 Example 9 0 90 8 1 1 100 ○ 5x10 9 2.0GHz 18.2dB ○ 2.1~14.7 Comparative example 1 0 95 3 1 1 100 X ○ 5x10 9 1.56GHz 12.6dB △ 2.4~12.5 X Comparative example 2 90 0 8 1 1 100 X X 1x10 0 5.60GHz 0.56dB X 2.15~7.30 X

由表一顯示,總體評估結果為:比較例1及2總體評估結果為不良;實施例1~5總體評估結果為可接受;實施例6~9總體評估結果為良好。As shown in Table 1, the overall evaluation results are: the overall evaluation results of Comparative Examples 1 and 2 are bad; the overall evaluation results of Examples 1 to 5 are acceptable; the overall evaluation results of Examples 6 to 9 are good.

比較例2為習知電磁干擾屏蔽層,在高頻段的電磁波下,電磁干擾屏蔽層顯示S11參數的絕對值幾乎為零(0.56dB),這表示其為將電磁波全反射而不具吸收電磁波的效果,也表示電磁波不但完全沒有被電磁干擾屏蔽層衰減,反而因為接近於將電磁波全反射而可能形成了新的電磁干擾。實施例1~9的該絕緣軟磁膜的S11參數的絕對值則至少為8.39dB(實施例1)以上,甚至高達20.69dB(實施例6),表示電磁波被實施例1~9的該絕緣軟磁膜反射衰減的程度大,實施例1~9的該絕緣軟磁膜能有效地消除所受的電磁干擾,因此也不會產生新的電磁干擾。Comparative example 2 is a conventional electromagnetic interference shielding layer. Under high frequency electromagnetic waves, the electromagnetic interference shielding layer shows that the absolute value of the S11 parameter is almost zero (0.56dB), which means that it totally reflects electromagnetic waves without absorbing electromagnetic waves. , It also means that the electromagnetic wave is not attenuated by the electromagnetic interference shielding layer at all, but because it is close to the total reflection of the electromagnetic wave, new electromagnetic interference may be formed. The absolute value of the S11 parameter of the insulating soft magnetic film of Examples 1-9 is at least 8.39dB (Example 1) and even as high as 20.69dB (Example 6), indicating that electromagnetic waves are affected by the insulating soft magnetic film of Examples 1-9. The degree of film reflection attenuation is large, and the insulating soft magnetic film of Examples 1 to 9 can effectively eliminate the electromagnetic interference received, so no new electromagnetic interference will be generated.

再者,比較例2的電磁干擾屏蔽層及比較例1的絕緣軟磁膜的表面有龜裂現象,龜裂之處容易造成電磁波洩漏,有可能導致電磁干擾防制的失敗風險。實施例1~9的該絕緣軟磁膜則都沒有龜裂,因此減少了電磁波洩漏的風險。Furthermore, the surface of the electromagnetic interference shielding layer of Comparative Example 2 and the insulating soft magnetic film of Comparative Example 1 have cracks, and the cracks are likely to cause electromagnetic wave leakage, which may lead to the risk of failure of electromagnetic interference control. The insulating soft magnetic films of Examples 1-9 have no cracks, so the risk of electromagnetic wave leakage is reduced.

另外,比較例2的表面電阻值為1x100 Ω/□,其具有導電的性質,因此當直接覆蓋在主機電路板上的電路圖案上時,會造成電路的短路而導致主機電路板報廢。實施例1~9的該絕緣軟磁膜的表面電阻值至少為5x109 Ω/□,因此可以直接覆蓋在主機電路板上的電路圖案而不會造成電路的短路。In addition, the surface resistance value of Comparative Example 2 is 1x10 0 Ω/□, which has conductive properties. Therefore, when it is directly covered on the circuit pattern on the host circuit board, the circuit will be short-circuited and the host circuit board will be scrapped. The surface resistance of the insulating soft magnetic film of Examples 1-9 is at least 5× 10 9 Ω/□, so it can directly cover the circuit pattern on the host circuit board without causing short circuit of the circuit.

當然,由表一的實施例1~9的S11參數可以得知,該絕緣軟磁膜依複數個該絕緣軟磁顆粒的含量不同,可在不同頻率(實施例7~9的2.0GHz至實施例1的5.60GHz)顯現反射衰減效果,因此不同複數個該絕緣軟磁顆粒含量的該絕緣軟磁油墨及使用該絕緣軟磁油墨所製作的該絕緣軟磁膜,具有吸收電磁波的功效。Of course, from the S11 parameters of Examples 1 to 9 in Table 1, the insulating soft magnetic film has a different content of the insulating soft magnetic particles and can operate at different frequencies (from 2.0 GHz in Examples 7 to 9 to Example 1 (5.60GHz) shows the reflection attenuation effect, so the insulating soft magnetic ink with different contents of the insulating soft magnetic particles and the insulating soft magnetic film made by using the insulating soft magnetic ink have the effect of absorbing electromagnetic waves.

特別說明的是,前述之該絕緣軟磁膜的製備方法係將塗層中的該絕緣軟磁油墨之該溶劑揮發以形成該絕緣軟磁膜,因此係將表一中各實施例移除該溶劑後,計算出該絕緣軟磁膜中複數個該絕緣軟磁顆粒、該第一樹脂及該第二樹脂的占比並列於下述表二。In particular, the aforementioned method for preparing the insulating soft magnetic film is to volatilize the solvent of the insulating soft magnetic ink in the coating to form the insulating soft magnetic film. Therefore, after removing the solvent from the examples in Table 1, The proportions of the insulating soft magnetic particles, the first resin and the second resin in the insulating soft magnetic film are calculated and listed in Table 2 below.

表二 項目 絕緣軟磁膜的組成(wt%) 絕緣軟磁顆粒 第一樹脂 第二樹脂 實施例1 55.56 33.33 11.11 實施例2 66.67 22.22 11.11 實施例3 77.78 11.11 11.11 實施例4 86.02 3.23 10.75 實施例5 86.60 9.28 4.12 實施例6 87.63 9.28 3.09 實施例7 95.75 3.19 1.06 實施例8 91.84 3.06 5.10 實施例9 90.91 8.08 1.01 Table II project Composition of insulating soft magnetic film (wt%) Insulating soft magnetic particles The first resin Second resin Example 1 55.56 33.33 11.11 Example 2 66.67 22.22 11.11 Example 3 77.78 11.11 11.11 Example 4 86.02 3.23 10.75 Example 5 86.60 9.28 4.12 Example 6 87.63 9.28 3.09 Example 7 95.75 3.19 1.06 Example 8 91.84 3.06 5.10 Example 9 90.91 8.08 1.01

基於表二,以複數個該絕緣軟磁顆粒、該第一樹脂及該第二樹脂為100wt%為計量,該絕緣軟磁膜中係包含:55.56~95.74wt%的複數個該絕緣軟磁顆粒、3.06~33.33wt%的該第一樹脂及1.01~11.11wt%的該第二樹脂。換言之,以複數個該絕緣軟磁顆粒及該樹脂層為100wt%為計量,該絕緣軟磁膜中係包含:55.56~95.74wt%的複數個該絕緣軟磁顆粒及4.07~44.44wt%的該樹脂層。Based on Table 2, taking a plurality of the insulating soft magnetic particles, the first resin and the second resin as 100wt%, the insulating soft magnetic film contains: 55.56~95.74wt% of the plurality of insulating soft magnetic particles, 3.06~ 33.33wt% of the first resin and 1.01-11.11wt% of the second resin. In other words, taking a plurality of the insulating soft magnetic particles and the resin layer as 100% by weight, the insulating soft magnetic film contains: 55.56 to 95.74% by weight of the plurality of insulating soft magnetic particles and 4.07 to 44.44% by weight of the resin layer.

另外,請一併參閱第4圖,前述該絕緣軟磁膜積層電路板3更包含覆蓋於該絕緣軟磁膜100的該防焊膜33,該防焊膜33係覆蓋於該絕緣軟磁膜100相反於該基板的一側。因此,基於第4圖的實施例,本發明之該絕緣軟磁膜積層電路板,包含:該基板31、該絕緣軟磁膜100及該防焊膜33,其中該絕緣軟磁膜100係直接覆蓋在設置於該基板31表面的該電路圖案32上並與該電路圖案32接觸,該防焊膜33係覆蓋於該絕緣軟磁膜100相反於該基板31的一側;該絕緣軟磁膜100,係包含該樹脂層2及分散於該樹脂層2中的複數個該絕緣軟磁顆粒1;該絕緣軟磁顆粒1具有該芯部11和包圍該芯部11的周圍的該殼部12,該絕緣軟磁顆粒1的形狀為球狀,粒徑係介於1μm~50μm,該芯部11為鐵矽鉻合金球,以鐵矽鉻合金球為100wt%為計量,該芯部11包含85wt%~95wt%的鐵、1wt%~10wt%的矽及1wt%~5wt%的鉻,該殼部12為磷酸鹽皮膜、矽酸鹽皮膜或二氧化矽皮膜,該殼部12的絕緣電阻值為大於5x109 Ω;該殼部12及該樹脂層2係不同的材料所構成;該殼部12的重量為該芯部11的重量的1%~10%;且,以複數個該絕緣軟磁顆粒1及該樹脂層2為100wt%為計量,該絕緣軟磁膜100係包含有55.56~95.74wt%的複數個該絕緣軟磁顆粒1;該樹脂層2係由一第一樹脂及一第二樹脂所構成,該殼部12的材料、該第一樹脂及該第二樹脂係彼此不相同;且,以複數個該絕緣軟磁顆粒1、該第一樹脂及該第二樹脂為100wt%為計量,該絕緣軟磁膜包含有3.06~33.33wt%的該第一樹脂及1.01~11.11wt%的該第二樹脂;該第一樹脂係為酚醛環氧樹脂,該第二樹脂係為苯酚與甲醛縮水甘油醚的聚合物。In addition, please also refer to FIG. 4, the aforementioned insulating soft magnetic film laminated circuit board 3 further includes the solder resist film 33 covering the insulating soft magnetic film 100, and the solder resist film 33 covers the insulating soft magnetic film 100 as opposed to One side of the substrate. Therefore, based on the embodiment in FIG. 4, the insulating soft magnetic film laminated circuit board of the present invention includes: the substrate 31, the insulating soft magnetic film 100, and the solder mask 33, wherein the insulating soft magnetic film 100 is directly covered On the circuit pattern 32 on the surface of the substrate 31 and in contact with the circuit pattern 32, the solder mask 33 covers the side of the insulating soft magnetic film 100 opposite to the substrate 31; the insulating soft magnetic film 100 includes the The resin layer 2 and a plurality of the insulating soft magnetic particles 1 dispersed in the resin layer 2; the insulating soft magnetic particles 1 have the core 11 and the shell 12 surrounding the core 11, the insulating soft magnetic particles 1 The shape is spherical, and the particle size is between 1 μm and 50 μm. The core 11 is a ferrosilicon chromium alloy ball, and the ferrosilicon chromium alloy ball is measured as 100wt%. The core 11 contains 85wt% to 95wt% iron, 1wt%~10wt% silicon and 1wt%~5wt% chromium, the shell part 12 is a phosphate film, a silicate film or a silicon dioxide film, and the insulation resistance value of the shell part 12 is greater than 5x10 9 Ω; The shell portion 12 and the resin layer 2 are made of different materials; the weight of the shell portion 12 is 1% to 10% of the weight of the core portion 11; and a plurality of the insulating soft magnetic particles 1 and the resin layer 2 100wt% is the measurement, the insulating soft magnetic film 100 contains 55.56~95.74wt% of a plurality of the insulating soft magnetic particles 1; the resin layer 2 is composed of a first resin and a second resin, and the shell portion 12 The material, the first resin, and the second resin are different from each other; and, based on a plurality of the insulating soft magnetic particles 1, the first resin and the second resin as 100wt%, the insulating soft magnetic film contains 3.06 ~33.33wt% of the first resin and 1.01-11.11wt% of the second resin; the first resin is a novolac epoxy resin, and the second resin is a polymer of phenol and formaldehyde glycidyl ether.

請一併參閱第5圖,前述第4圖中的該絕緣軟磁膜積層電路板3更包含兩個電子元件5設置於與該電路圖案32同一側的該基板31表面,且該絕緣軟磁膜100係設置於兩個該電子元件5之間。較佳地,該絕緣軟磁膜100係設置於兩個該電子元件5之間且不覆蓋任一個該電子元件5,該絕緣軟磁膜100也不與任一個該電子元件5接觸。Please also refer to Fig. 5. The insulating soft magnetic film laminated circuit board 3 in the aforementioned Fig. 4 further includes two electronic components 5 arranged on the surface of the substrate 31 on the same side as the circuit pattern 32, and the insulating soft magnetic film 100 It is arranged between the two electronic components 5. Preferably, the insulating soft magnetic film 100 is disposed between the two electronic components 5 and does not cover any one of the electronic components 5, and the insulating soft magnetic film 100 does not contact any of the electronic components 5 either.

以上所述,僅為本創作較佳的實施例,當不能以此限定本創作之實施範圍。凡依本創作申請專利範圍及發明說明書內容所做之簡單等效的修飾與變化,仍應屬本創作專利涵蓋之範圍。The above are only preferred embodiments of this creation, and should not be used to limit the scope of implementation of this creation. All simple and equivalent modifications and changes made in accordance with the scope of the patent application for this creation and the content of the description of the invention shall still fall within the scope of this creation patent.

1:絕緣軟磁顆粒 11:芯部 12:殼部 100:絕緣軟磁膜 2:樹脂層 3:絕緣軟磁膜積層電路板 31:基板 32:電路圖案 33:防焊膜 5:電子元件1: Insulating soft magnetic particles 11: Core 12: Shell 100: Insulating soft magnetic film 2: Resin layer 3: Insulating soft magnetic film laminated circuit board 31: substrate 32: circuit pattern 33: solder mask 5: Electronic components

第1圖為本發明中絕緣軟磁顆粒的結構示意圖。 第2圖為本發明之絕緣軟磁膜的結構示意圖。 第3圖為本發明之絕緣軟磁膜積層電路板的結構示意圖(一)。 第4圖為本發明之絕緣軟磁膜積層電路板的結構示意圖(二)。 第5圖為本發明之絕緣軟磁膜積層電路板的結構示意圖(三)。Figure 1 is a schematic diagram of the structure of insulating soft magnetic particles in the present invention. Figure 2 is a schematic diagram of the structure of the insulating soft magnetic film of the present invention. Figure 3 is a schematic diagram (1) of the structure of the insulated soft magnetic film laminated circuit board of the present invention. Figure 4 is a schematic diagram (2) of the structure of the insulated soft magnetic film laminated circuit board of the present invention. Figure 5 is a schematic diagram (3) of the structure of the insulated soft magnetic film laminated circuit board of the present invention.

1:絕緣軟磁顆粒 1: Insulating soft magnetic particles

11:芯部 11: Core

12:殼部 12: Shell

100:絕緣軟磁膜 100: Insulating soft magnetic film

2:樹脂層 2: Resin layer

3:絕緣軟磁膜積層電路板 3: Insulating soft magnetic film laminated circuit board

31:基板 31: substrate

32:電路圖案 32: circuit pattern

33:防焊膜 33: solder mask

Claims (6)

一種絕緣軟磁膜積層電路板,包含:一基板、一絕緣軟磁膜及一防焊膜,其中該絕緣軟磁膜係直接覆蓋在一設置於該基板表面的電路圖案上並與該電路圖案接觸,該防焊膜係覆蓋於該絕緣軟磁膜相反於該基板的一側;該絕緣軟磁膜,係包含一樹脂層及分散於該樹脂層中的複數個絕緣軟磁顆粒;該絕緣軟磁顆粒具有一芯部和包圍該芯部的周圍的一殼部,該絕緣軟磁顆粒的形狀為球狀,粒徑係介於1μm~50μm,該芯部為鐵矽鉻合金球,以鐵矽鉻合金球為100wt%為計量,該芯部包含85wt%~95wt%的鐵、1wt%~10wt%的矽及1wt%~5wt%的鉻,該殼部為磷酸鹽皮膜、矽酸鹽皮膜或二氧化矽皮膜,該殼部的絕緣電阻值為大於5x109Ω;該殼部及該樹脂層係不同的材料所構成;該殼部的重量為該芯部的重量的1%~10%;且,以複數個該絕緣軟磁顆粒及該樹脂層為100wt%為計量,該絕緣軟磁膜係包含有55.56~95.74wt%的複數個該絕緣軟磁顆粒;該樹脂層係由一第一樹脂及一第二樹脂所構成,該殼部的材料、該第一樹脂及該第二樹脂係彼此不相同;且,以複數個該絕緣軟磁顆粒、該第一樹脂及該第二樹脂為100wt%為計量,該絕緣軟磁膜包含有3.06~33.33wt%的該第一樹脂及1.01~11.11wt%的該第二樹脂;該第一樹脂係為酚醛環氧樹脂,該第二樹脂係為苯酚與甲醛縮水甘油醚的聚合物;其中,該絕緣軟磁膜係由一種絕緣軟磁油墨所製備,該絕緣軟磁油墨包含:50wt%~90wt%的複數個該絕緣軟磁顆粒、3wt%~30wt%的該第一樹脂、1wt%~10wt%的該第二樹脂及1wt%~10wt%的一溶劑。 An insulating soft magnetic film laminated circuit board, comprising: a substrate, an insulating soft magnetic film and a solder mask, wherein the insulating soft magnetic film directly covers a circuit pattern arranged on the surface of the substrate and contacts the circuit pattern, the The solder mask covers the side of the insulating soft magnetic film opposite to the substrate; the insulating soft magnetic film includes a resin layer and a plurality of insulating soft magnetic particles dispersed in the resin layer; the insulating soft magnetic particle has a core And a shell surrounding the core, the insulating soft magnetic particles are spherical in shape, with a particle size ranging from 1 μm to 50 μm. The core is iron-silicon-chromium alloy balls, and the iron-silicon-chromium alloy balls are 100wt% For measurement, the core contains 85wt%~95wt% iron, 1wt%~10wt% silicon and 1wt%~5wt% chromium. The shell part is a phosphate film, a silicate film or a silicon dioxide film. The insulation resistance value of the shell is greater than 5x10 9 Ω; the shell and the resin layer are made of different materials; the weight of the shell is 1% to 10% of the weight of the core; 100wt% of the insulating soft magnetic particles and the resin layer are measured. The insulating soft magnetic film contains 55.56~95.74wt% of the insulating soft magnetic particles; the resin layer is composed of a first resin and a second resin, The material of the shell part, the first resin and the second resin are different from each other; and, taking a plurality of the insulating soft magnetic particles, the first resin and the second resin as 100wt% as a measurement, the insulating soft magnetic film includes There are 3.06~33.33wt% of the first resin and 1.01~11.11wt% of the second resin; the first resin is a novolac epoxy resin, and the second resin is a polymer of phenol and formaldehyde glycidyl ether; Wherein, the insulating soft magnetic film is prepared by an insulating soft magnetic ink, the insulating soft magnetic ink includes: 50wt%~90wt% of the insulating soft magnetic particles, 3wt%~30wt% of the first resin, 1wt%~10wt% The second resin and 1wt%~10wt% of a solvent. 如申請專利範圍第1項所述之絕緣軟磁膜積層電路板,其中該絕緣軟磁膜積層電路板更包含兩個電子元件,該絕緣軟磁膜係設置於兩個該電子元件之間。 The insulating soft magnetic film laminated circuit board as described in item 1 of the scope of patent application, wherein the insulating soft magnetic film laminated circuit board further includes two electronic components, and the insulating soft magnetic film is disposed between the two electronic components. 如申請專利範圍第2項所述之絕緣軟磁膜積層電路板,其中該絕緣軟磁膜係設置於兩個該電子元件之間且不覆蓋任一個該電子元件,該絕緣軟磁膜也不與任一個該電子元件接觸。 The insulating soft magnetic film laminated circuit board described in item 2 of the scope of the patent application, wherein the insulating soft magnetic film is disposed between the two electronic components and does not cover any one of the electronic components, and the insulating soft magnetic film is not connected to any one of the electronic components. The electronic component contacts. 如申請專利範圍第1項所述之絕緣軟磁膜積層電路板,其中該溶劑為乙二醇丁醚醋酸酯。 The insulating soft magnetic film laminated circuit board as described in item 1 of the scope of patent application, wherein the solvent is ethylene glycol butyl ether acetate. 如申請專利範圍第4項所述之絕緣軟磁膜積層電路板,其中該絕緣軟磁油墨係可以包含一分散劑,以複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑為100wt%為計量,該分散劑係為0.001wt%~0.01wt%,該分散劑係為3-環氧丙氧丙基三甲氧基矽烷。 As for the insulating soft magnetic film laminated circuit board described in item 4 of the scope of patent application, the insulating soft magnetic ink may contain a dispersant, and a plurality of the insulating soft magnetic particles, the first resin, the second resin and the solvent are used as 100wt% is the measurement, the dispersant system is 0.001wt%~0.01wt%, and the dispersant system is 3-glycidoxypropyltrimethoxysilane. 如申請專利範圍第5項所述之絕緣軟磁膜積層電路板,其中該絕緣軟磁油墨係可以包含一消泡劑,以複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑為100wt%為計量,該消泡劑係為0.1wt~0.2wt%,該消泡劑係可以為有機矽類消泡劑或聚合物類消泡劑。 The insulating soft magnetic film laminated circuit board described in item 5 of the scope of the patent application, wherein the insulating soft magnetic ink may contain a defoaming agent with a plurality of the insulating soft magnetic particles, the first resin, the second resin and the solvent 100wt% is the measurement, the defoaming agent is 0.1wt to 0.2wt%, and the defoaming agent can be an organosilicon defoaming agent or a polymer defoaming agent.
TW108129524A 2019-08-19 2019-08-19 Insulating soft magnetic film laminated circuit board TWI734172B (en)

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CN202010538333.5A CN112391077A (en) 2019-08-19 2020-06-12 Insulating soft magnetic ink, insulating soft magnetic film and insulating soft magnetic film laminated circuit board
CN202021091905.1U CN212357119U (en) 2019-08-19 2020-06-12 Insulation soft magnetic film laminated circuit board

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201117240A (en) * 2009-06-30 2011-05-16 Sumitomo Electric Industries Soft magnetic material, shaped body, compressed powder magnetic core, electromagnetic component, process for production of soft magnetic material, and process for production of compressed powder magnetic core
TW201611047A (en) * 2014-05-29 2016-03-16 Nitto Denko Corp Soft magnetic resin composition and soft magnetic film
TW201739016A (en) * 2016-04-25 2017-11-01 Tdk股份有限公司 Electronic circuit package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201117240A (en) * 2009-06-30 2011-05-16 Sumitomo Electric Industries Soft magnetic material, shaped body, compressed powder magnetic core, electromagnetic component, process for production of soft magnetic material, and process for production of compressed powder magnetic core
TW201611047A (en) * 2014-05-29 2016-03-16 Nitto Denko Corp Soft magnetic resin composition and soft magnetic film
TW201739016A (en) * 2016-04-25 2017-11-01 Tdk股份有限公司 Electronic circuit package

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