TWI732781B - Vacuum processing apparatus and method for vacuum processing substrates - Google Patents

Vacuum processing apparatus and method for vacuum processing substrates Download PDF

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TWI732781B
TWI732781B TW105128932A TW105128932A TWI732781B TW I732781 B TWI732781 B TW I732781B TW 105128932 A TW105128932 A TW 105128932A TW 105128932 A TW105128932 A TW 105128932A TW I732781 B TWI732781 B TW I732781B
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turntable
central axis
vacuum processing
plane
substrate
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TW201718915A (en
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西薇亞 史偉恩湯尼
羅蜜歐 古德
麥克 雀瑟奧
馬可 帕德倫
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瑞士商艾維太克股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

A vacuum treatment apparatus comprising a vacuum treatment recipient (12) with at least one circular opening (13) between an inside (i) and exterior (e) of said recipient (12). Said recipient houses a turntable (1), which defines a plane (P) along its table surface; is drivingly rotatable around a central axis (B) perpendicular to plane (P), and exhibits a plurality of circular substrates supports (2,...9); whereby said at least one opening (13) is arranged such that during a turn of the turntable (1) the area of each of the substrate supports (2,....9) and the opening (13) are fully aligned and completely face each other; the vacuum treatment apparatus further comprising; a PVD deposition source (14) attached to said at least one opening (13), whereby said PVD source exhibits at least a circular material target (15) and the static magnet arrangement (11) and said magnet arrangement is arranged in a plane (M) in parallel to plane (P) and is not rotational symmetric around a central axis (C) running centrally through said magnet arrangement and being perpendicular to said plane (M).

Description

真空處理設備以及用於真空處理基板的方法 Vacuum processing equipment and method for vacuum processing substrate

本發明係有關於一種在低於大氣壓的條件下用於處理基板之系統或設備，特別是半導體晶圓或主要包括玻璃或塑膠之基板。此外，本發明係亦有關於一種製造此基板之方法。 The present invention relates to a system or equipment for processing substrates under sub-atmospheric pressure conditions, especially semiconductor wafers or substrates mainly composed of glass or plastic. In addition, the present invention also relates to a method of manufacturing the substrate.

[定義][definition]

就本發明而言，「製程」意即用於基板之一處理步驟或一系列處理步驟。真空處理意即一真空製程，其中，工件係分別於低於大氣壓的壓力下或在真空條件下進行表面處理。該處理包括在表面上之任何化學、物理效應，諸如PVD、CVD塗層、蝕刻、熱退火、或類似者。 As far as the present invention is concerned, "process" means a processing step or a series of processing steps used for a substrate. Vacuum treatment means a vacuum process in which the workpiece is subjected to surface treatment under a pressure lower than atmospheric pressure or under vacuum conditions. The treatment includes any chemical or physical effects on the surface, such as PVD, CVD coating, etching, thermal annealing, or the like.

就本發明而言，基板或工件係為在製程設備內進行處理之組成或零件。基板包括，但不受限於，具有矩形、方形或圓形形狀的平坦、碟狀之零件。在一較佳實施例中，本發明係指實質上平面的、圓形的基板，例如，主要包括矽(晶圓)、玻璃或塑膠。 As far as the present invention is concerned, a substrate or a workpiece is a component or part that is processed in a process equipment. The substrate includes, but is not limited to, flat, dish-shaped parts having a rectangular, square, or circular shape. In a preferred embodiment, the present invention refers to a substantially flat, circular substrate, for example, mainly composed of silicon (wafer), glass or plastic.

真空製程或真空處理系統或設備包括至少一包圍基板之裝置，在壓力低於大氣壓下進行處理。 The vacuum process or vacuum processing system or equipment includes at least one device surrounding the substrate, which is processed under a pressure lower than atmospheric pressure.

製程機台意即用於進行處理步驟(相對於真空下裝載/卸載操作或輸送)之真空處理系統之區域。 The process tool refers to the area of the vacuum processing system used for processing steps (as opposed to loading/unloading operations or conveying under vacuum).

化學氣相沉積(CVD)係為一種化學製程，以在加熱基板上進行薄膜沉積。一或多揮發性前驅物材料被餵入製程系統，在其中該發性前驅物材料在基板表面上反應及/或分解，以產生所要之沉積物。 Chemical vapor deposition (CVD) is a chemical process to deposit thin films on heated substrates. One or more volatile precursor materials are fed into the process system, in which the volatile precursor materials react and/or decompose on the surface of the substrate to produce the desired deposits.

物理氣相沉積(PVD)係為一種用來說明任何藉由基板表面上之氣相形式材料以沉積薄膜之方法的一般用語。相對於CVD，塗層方法涉及單純的物理製程，諸如，高溫真空蒸鍍或電漿濺鍍轟擊。各種PVD包括陰極電弧沉積、電子束物理氣相沉積、蒸鍍式沉積、濺鍍沉積(意即，輝光電漿放電，通常侷限於位於靶材表面上之磁鐵性通道)。 Physical vapor deposition (PVD) is a general term used to describe any method of depositing thin films from vapor-phase materials on the surface of a substrate. Compared with CVD, the coating method involves purely physical processes, such as high-temperature vacuum evaporation or plasma sputtering bombardment. Various types of PVD include cathodic arc deposition, electron beam physical vapor deposition, vapor deposition, and sputter deposition (that is, glow plasma discharge, usually confined to the magnetic channel located on the surface of the target).

濺鍍之PVD製程，亦稱作陰極濺鍍，意即原子從靶材表面藉由高能離子之轟擊而剝離，進入氣相並且最終沉積於基板表面。 The sputtering PVD process, also known as cathodic sputtering, means that atoms are stripped from the surface of the target by the bombardment of high-energy ions, enter the gas phase, and are finally deposited on the surface of the substrate.

靶材以及相對電極之間的電場維持本區域內之供應之工作氣體的離子化製程。氣體離子朝向靶材加速，而且造成本體表面之霧化。此濺鍍製程的特性可被設置於靶材後面(遠離基板)的磁鐵性裝置所影響且放大。此磁鐵系統在本技術領域係為習知，其被配置以產生橫越靶材表面之封閉的磁鐵性通道迴路。此通道主要侷限以工作氣體強化碰撞離子化製程之電子。此設備係為習知的磁控濺鍍裝置或磁控管。為了改善靶材隨時間而劣化以及沉積之均勻性，磁鐵系統通常繞著垂直於靶材表面之軸而旋轉。 The electric field between the target and the opposite electrode maintains the ionization process of the supplied working gas in the area. The gas ions accelerate toward the target and cause atomization on the surface of the body. The characteristics of this sputtering process can be affected and amplified by the magnet device placed behind the target (away from the substrate). This magnet system is well known in the art and is configured to create a closed magnetic channel loop across the surface of the target. This channel is mainly limited to electrons that use working gas to enhance the collision ionization process. This equipment is a conventional magnetron sputtering device or magnetron. In order to improve the deterioration of the target material over time and the uniformity of the deposition, the magnet system usually rotates around an axis perpendicular to the surface of the target material.

使用於濺鍍設備之工作氣體係為鈍氣，諸如，氬，其可由類似之氫、氮、氧等或其混合物反應氣體補充。從靶材濺鍍之粒子可接著與該等氣體反應，而且所沉積之薄膜包括靶材之氧化物、氮化物、氧氮化物。 The working gas system used in the sputtering equipment is a passivation gas, such as argon, which can be supplemented by similar reaction gases such as hydrogen, nitrogen, oxygen, etc. or their mixtures. The particles sputtered from the target can then react with the gases, and the deposited film includes oxides, nitrides, and oxynitrides of the target.

層、塗層、沉積及薄膜等術語係交替使用於在本揭露書中，以在真空製程設備中進行薄膜沉積，不論是CVD、LPCVD、電漿輔助CVD(PECVD)或PVD(物理氣相沉積)。 The terms layer, coating, deposition and thin film are used interchangeably in this disclosure to carry out thin film deposition in vacuum process equipment, whether it is CVD, LPCVD, plasma assisted CVD (PECVD) or PVD (physical vapor deposition). ).

真空濺鍍設備在本技術領域中係為習知，並且包括諸如批次類型製程系統或單一基板處理系統等變化。具有許多不同製程機台的真空製程系統允許在製程步驟之間不破真空而處理基板。載入或移除基板進入或離開此種受制之真空環境通常使用一種裝載/卸載閘，其在本技術領域中亦為習知。 Vacuum sputtering equipment is well-known in the art and includes variations such as batch-type process systems or single substrate processing systems. The vacuum process system with many different process tools allows the substrate to be processed without breaking the vacuum between process steps. Loading or removing substrates into or out of such a restricted vacuum environment generally uses a loading/unloading gate, which is also known in the art.

本發明有關於真空製程系統之一類型，其包括真空環境中的可旋轉之轉盤。此轉盤具有數個配置基板之位置。可能之基板數目係由轉盤尺寸與半徑之比例以及基板形狀所決定。製程機台係共接於真空且可密封之開孔於一外殼中，在其中進行基板所需之處理。在製程進行時，轉盤可以連續或不連續之程序旋轉。兩種操作程序都有其規格。在不連續程序中，基板被移到製程機台前面，並且在轉盤靜止時被處理。處理源在基板被正確放置時，即被活化。同質性處理結果的達成在此被簡化。然而，開關處理源以及在處理程序之間移動基板 是不具生產力的時段。在連續程序中，在基板經過製程機台時以在進行處理。此方式從所謂在線塗層系統(in-line coating system)中已為習知，其已廣泛熟知於本技術領域中，例如，用於塗佈結構玻璃。例如，濺鍍源之製程機台在基板經過時仍然繼續操作。 The present invention relates to a type of vacuum processing system, which includes a rotatable turntable in a vacuum environment. The turntable has several positions for disposing the substrate. The number of possible substrates is determined by the ratio of the size of the turntable to the radius and the shape of the substrate. The process machine is connected to a vacuum and sealable opening in a housing, where the processing required for the substrate is performed. During the process, the turntable can rotate continuously or discontinuously. Both operating procedures have their specifications. In the discontinuous process, the substrate is moved to the front of the process tool and processed while the turntable is stationary. The processing source is activated when the substrate is correctly placed. The achievement of homogeneity processing results is simplified here. However, switching processing sources and moving substrates between processing programs It is an unproductive period. In a continuous process, the substrate is processed as it passes through the process tool. This method is known from the so-called in-line coating system, which is widely known in the art, for example, for coating structural glass. For example, the process tool of the sputtering source continues to operate when the substrate passes by.

[先前技術的缺點][Disadvantages of the prior art]

儘管很明顯的可以結合旋轉之基板轉盤(精簡)與在線系統之經過方式(易於操作)的優勢，仍然有不可避免之系統性問題。圖1顯示，一外殼35中之圓形轉盤31上之上視圖。僅顯示3個基板位置32、33、34。在操作時，轉盤旋轉而且因此基板藉由，例如，區域36所示之塗層源而被處理。吾人將輕易地了解，基板之每個區域將不會均勻地被塗佈，而取決於其相對於旋轉軸的位置以及其在基板上的位置。基板源36係顯示為圓形的，但其下方之效果亦將適用於具有更加延伸形式之源，意即，徑向延伸之線源。 Although it is obvious that it can combine the advantages of the rotating substrate turntable (reduced) and the passing method of the online system (easy to operate), there are still unavoidable systemic problems. Figure 1 shows a top view of a circular turntable 31 in a housing 35. Only 3 substrate positions 32, 33, 34 are displayed. In operation, the turntable rotates and therefore the substrate is processed by the coating source shown in area 36, for example. We will easily understand that each area of the substrate will not be uniformly coated, but depends on its position relative to the rotation axis and its position on the substrate. The substrate source 36 is shown as a circular shape, but the effect below it will also apply to a source having a more extended form, that is, a radially extending line source.

EP 0 443 442顯示一種設備以及應用，其處理a.m.問題。不僅藉由旋轉轉盤，亦旋轉基板，隨著時間而獲得沉積均勻性。然而，轉盤必須裝配允許個別基板旋轉之裝置。其可使用機械(例如，藉由齒輪)或使用電氣驅動而獲得解決，然而，其需要一條連接到轉盤之電力線。旋轉基板產生其自身的問題，因為夾持基板以及冷卻需要更多結構以及維護成本。 EP 0 443 442 shows a device and application that deal with a.m. problems. Not only by rotating the turntable, but also by rotating the substrate, the deposition uniformity is obtained over time. However, the turntable must be equipped with a device that allows individual substrates to rotate. It can be solved by using machinery (for example, by gears) or using electric drives. However, it requires a power line connected to the turntable. Rotating the substrate creates its own problems, because clamping the substrate and cooling requires more structure and maintenance costs.

因此，本發明之目的在於提供一種真空處理設備以及用於真空處理基板之方法，其避免基板旋轉之 必要性，並且不需要旋轉磁控管內之磁鐵系統，而是使用靜態磁鐵系統。 Therefore, the object of the present invention is to provide a vacuum processing equipment and a method for vacuum processing substrates, which can prevent the substrate from rotating. Necessary, and does not need to rotate the magnet system in the magnetron, but uses a static magnet system.

根據本發明之真空處理設備係顯示於圖3中，並且包括一真空處理容器12，具有至少一可密封的圓形開孔13，其介於容器12之內部(i)以及外部(e)之間，容器12包圍一轉盤1，轉盤1沿著其表面定義一平面P，驅動地可繞著垂直平面P之一中心軸B旋轉，並且具有複數個圓形的基板支撐件2-9。開孔13係被配置，使得該等基板支撐件2-9之每一者的區域以及該開孔13在該轉盤1旋轉一周的期間，係彼此完全對齊而且完全相對。PVD沉積源14附接於該至少一開孔13，其中PVD源具有至少一圓形的靶材15以及一靜態磁鐵裝置11，該磁鐵裝置11被配置於一平行於平面P之平面M，以及並未繞著一中心軸C呈旋轉對稱，該中心軸C延伸穿過該磁鐵裝置之中心，並且垂直於該平面M。在一較佳實施例中，磁鐵裝置11係繞著平面M上之一對稱軸A呈現對稱。 The vacuum processing equipment according to the present invention is shown in FIG. 3 and includes a vacuum processing container 12 with at least one sealable circular opening 13 between the inside (i) and the outside (e) of the container 12 Meanwhile, the container 12 surrounds a turntable 1, and the turntable 1 defines a plane P along its surface, which can be driven to rotate around a central axis B of the vertical plane P, and has a plurality of circular substrate supports 2-9. The opening 13 is configured such that the area of each of the substrate support members 2-9 and the opening 13 are completely aligned and completely opposite to each other during one revolution of the turntable 1. The PVD deposition source 14 is attached to the at least one opening 13, wherein the PVD source has at least one circular target 15 and a static magnet device 11, the magnet device 11 is arranged in a plane M parallel to the plane P, and It is not rotationally symmetric about a central axis C, which extends through the center of the magnet device and is perpendicular to the plane M. In a preferred embodiment, the magnet device 11 is symmetrical about a symmetry axis A on the plane M.

在又一較佳實施例中，磁鐵裝置11係繞著平面M上之任意對稱軸A呈現不對稱。 In another preferred embodiment, the magnet device 11 is asymmetric about any symmetry axis A on the plane M.

在又一較佳實施例中，磁鐵裝置11包括兩個磁鐵之閉迴路，該磁鐵具有每迴路相同之極性以及該兩迴路相反之極性，一迴路環繞環繞另一迴路，形成一外迴路以及一內迴路，其中該外迴路係環繞中心軸C以及兩個磁鐵之迴路係繞著該平面M上之任意對稱軸A而呈現不對稱。 In yet another preferred embodiment, the magnet device 11 includes a closed loop of two magnets. The magnets have the same polarity of each loop and the opposite polarity of the two loops. One loop surrounds the other loop to form an outer loop and a loop. The inner loop, wherein the outer loop is around the central axis C and the loop of the two magnets is asymmetric around any symmetry axis A on the plane M.

在又一較佳實施例中，磁鐵裝置11之每迴路包括至少四個區段，其中兩區段形成一圓弧線，其繞著該磁鐵裝置之中心軸C，而且圓弧形區段之第一對相對端之間之一區段包括或形成一直線，以及該圓弧形區段之第二對相對端之間之一區段包括或形成向內朝著該磁鐵裝置之該中心軸C延伸或繞著該磁鐵裝置之該中心軸C之一線。藉此，直線以及周圍線並未彼此交叉。圓弧形區段亦可向內朝著圓形中心軸C。 In yet another preferred embodiment, each loop of the magnet device 11 includes at least four sections, two of which form a circular arc line around the central axis C of the magnet device, and the arc-shaped sections A section between the first pair of opposite ends includes or forms a straight line, and a section between the second pair of opposite ends of the arc-shaped section includes or forms inwardly toward the central axis C of the magnet device A line extending or around the central axis C of the magnet device. In this way, the straight line and the surrounding lines do not cross each other. The arc-shaped section may also be inward toward the circular central axis C.

在又一較佳實施例中，一圓弧形區段相對於該轉盤之中心軸B形成該磁鐵系統之一最內區段，而且一圓弧形區段相對於該轉盤之中心軸B形成該磁鐵系統之一最外區段。 In another preferred embodiment, an arc-shaped section forms an innermost section of the magnet system relative to the central axis B of the turntable, and an arc-shaped section forms an innermost section of the magnet system relative to the central axis B of the turntable One of the outermost sections of the magnet system.

至少一圓弧形區段係相對於一與該轉盤之中心軸B交叉之對稱軸A呈現對稱。 At least one arc-shaped section is symmetrical with respect to a symmetry axis A intersecting the central axis B of the turntable.

本發明亦涉及一種用於在真空處理設備中處理基板的方法，該方法包括裝載至少一基板進入該真空處理設備於該等基板支撐件2-9之至少一者上，以及至少在從該PVD沉積源14濺鍍沉積材料於該至少一基板上時，以連續而不中斷之運動使該轉盤繞著其中心軸B旋轉。 The present invention also relates to a method for processing a substrate in a vacuum processing equipment, the method includes loading at least one substrate into the vacuum processing equipment on at least one of the substrate supports 2-9, and at least from the PVD When the deposition source 14 sputters deposition material on the at least one substrate, the turntable rotates around its central axis B in a continuous and uninterrupted motion.

本發明之進一步目的、優點以及可能應用可從以下本發明示例性具體實施例配合圖式之說明而獲得。 Further objectives, advantages and possible applications of the present invention can be obtained from the following exemplary embodiments of the present invention in conjunction with the description of the drawings.

1、31:轉盤 1, 31: turntable

2-9:支撐件 2-9: Support

10、16、17:區域 10, 16, 17: area

11:磁鐵裝置 11: Magnet device

12:容器 12: container

13、23:開孔 13, 23: opening

14:PVD沉積源 14: PVD deposition source

15:靶材 15: Target

32、33、34:位置 32, 33, 34: location

35:外殼 35: shell

36:基板源 36: Substrate source

A、B、C:軸 A, B, C: axis

K:線 K: line

M、P:平面 M, P: plane

i:內部 i: internal

e:外部 e: external

I-IV:區段 I-IV: Section

本發明之進一步目的、優點以及可能應用可從以下本發明示例性具體實施例配合圖式之說明而獲得，其中：圖1顯示「轉盤」真空處理系統之系統性問題；圖2顯示使用於本發明之磁鐵系統的基本設計；圖3顯示具有轉盤之真空塗層系統的上視圖以及截面圖；以及圖4顯示使用於本發明之磁鐵系統之細節。 The further objects, advantages and possible applications of the present invention can be obtained from the following exemplary embodiments of the present invention in conjunction with the description of the drawings. Among them: Figure 1 shows the systemic problems of the "turntable" vacuum processing system; Figure 2 shows the application in the present invention. The basic design of the magnet system of the invention; Figure 3 shows a top view and a cross-sectional view of the vacuum coating system with a turntable; and Figure 4 shows the details of the magnet system used in the present invention.

真空製程系統將參考圖3而加以說明。圖3顯示透過本發明之系統之簡化圖式的上視圖以及截面圖。外殼或真空處理容器12具有至少一個，較佳為複數個可密封的開孔13、23。其被提供以接受製程機台，諸如，PVD沉積源14、裝載閘、加熱機台、或除氣器，視其處理程序所需而定。在容器12裡，具有實質上圓形的轉盤1，具有用於基板或基板支撐件2-9之位置。轉盤之一般表面亦定義一平面P。基板支撐件2-9可為與所欲處裡之基板外部形狀匹配之凹座；框邊、接腳、卡盤、保持器、夾器或安裝架。如果基板由載體所保持，安裝架可為用於此載體之支撐件。 The vacuum process system will be described with reference to FIG. 3. Figure 3 shows a top view and a cross-sectional view of a simplified diagram through the system of the present invention. The housing or vacuum processing container 12 has at least one, preferably a plurality of sealable openings 13, 23. It is provided to accept a process tool, such as a PVD deposition source 14, a loading gate, a heating tool, or a degasser, depending on the requirements of the processing program. In the container 12, there is a substantially circular turntable 1 with positions for substrates or substrate supports 2-9. The general surface of the turntable also defines a plane P. The substrate support 2-9 can be a recess that matches the external shape of the substrate in the desired location; frame edges, pins, chucks, holders, clamps or mounting frames. If the substrate is held by a carrier, the mounting frame can be a support for the carrier.

支撐件2-9係被顯示為具有圓形的形狀，然而其非基板形狀之限制因素。 The support 2-9 is shown as having a circular shape, but it is not a limiting factor of the shape of the substrate.

轉盤具有旋轉軸B。可以旋轉轉盤之驅動器在圖3被省略。熟悉本技術之人士可以選擇適當的解決之道。 The turntable has a rotation axis B. The drive that can rotate the turntable is omitted in Figure 3. Those familiar with this technology can choose the appropriate solution.

基板支撐件之數量與形狀將由幾何限制以及真空處理系統之規格所定義。 The number and shape of the substrate support will be defined by geometric constraints and the specifications of the vacuum processing system.

示範性地，PVD沉積源14係顯示被配置於開孔13上。PVD源14實質上包括圓形的靶材15以及靜態磁鐵裝置11。磁鐵裝置定義一平面M，其平行於平面P並且因而垂直於軸B。軸C係為通過圓形靶材之中心軸，並且垂直於平面M，且因而平行於軸B。軸C亦分別標示開孔13、23之中心。軸B以及C之間的徑向距離之選擇係相同於軸B以及每一基板支撐件2-9之中心之徑向距離。換言之，在轉盤每旋轉一周的期間，當條件滿足時，基板支撐件之每一區域以及開孔13、23係完全對齊，而且完全彼此相對。開孔之數量可與基板位置之數量匹配，但並非強制的。 Exemplarily, the PVD deposition source 14 is shown to be disposed on the opening 13. The PVD source 14 essentially includes a circular target 15 and a static magnet device 11. The magnet arrangement defines a plane M, which is parallel to the plane P and thus perpendicular to the axis B. The axis C is the central axis passing through the circular target, and is perpendicular to the plane M, and thus parallel to the axis B. The axis C also marks the centers of the openings 13, 23, respectively. The choice of the radial distance between the shafts B and C is the same as the radial distance between the shaft B and the center of each substrate support 2-9. In other words, during each rotation of the turntable, when the conditions are met, each area of the substrate support and the openings 13 and 23 are completely aligned and completely opposite to each other. The number of openings can match the number of substrate positions, but it is not mandatory.

PVD源具有一靜態磁鐵裝置11，其被設計以補償下方通過之基板旋轉運動所造成之沉積不均勻性。其亦被設計而不需要掩蔽物、塑形器或遮蔽物。此元件通常被用來阻擋靶材以及基板之間路徑之特定部分。因此，將在此所述之PVD源設計成，沒有阻礙性實體元件是基於靶材的材料在撞擊基板之前接受靶材的材料的目的，而被引進靶材與基板之間的空間裡。此空間將由互相對齊時之靶材框邊以及基板框邊之間的連接線所定義以及限制。換言之，在靶材上任何點以及基板上任何點之間，存在著未被阻擋之視線(在互相對齊時)。由於沒有塑形器或遮蔽物，消除了剝落的主要來源；此外，靶材之使用獲得改善。 The PVD source has a static magnet device 11, which is designed to compensate for the uneven deposition caused by the rotating movement of the substrate passing below. It is also designed without the need for shelters, shapers or shelters. This element is usually used to block a specific part of the path between the target and the substrate. Therefore, the PVD source described here is designed such that no obstructive physical elements are introduced into the space between the target and the substrate based on the purpose of receiving the target material before the target material hits the substrate. This space will be defined and limited by the connecting lines between the frame edges of the target material and the frame edges of the substrate when aligned with each other. In other words, between any point on the target and any point on the substrate, there is an unobstructed line of sight (when aligned with each other). Since there are no shapers or shields, the main source of spalling is eliminated; in addition, the use of targets has been improved.

在一較佳實施例中，可以達成此目的之磁鐵系統具有如圖2所示之基本形式，其係為上視圖。實質上，其包括兩圈磁鐵，一個環繞另一個，並且具有相對之極性。其以虛線顯示於圖2，而且在操作時，電漿通道本質上被困在這兩圈磁鐵所產生之磁拱之間。令人驚訝地，發明人發現，在一較佳實施例中，兩磁鐵迴路基本上具有梯形之形狀。在簡化形式中，其可包括至少四個區段，其中兩區段形成直線而且兩區段形成圓弧線。羅馬數字I-IV顯示圖2之這些區段。下標o代表磁鐵外(outer)圈，其中的點狀分離線係為有效的。內圈具有其自身的區段角分布，不過沿用上述之基本方式。兩區段之間的過度區可具有彎曲的區段，以平滑該電漿迴路在操作時之彎折。在一變換例中，此磁鐵系統之布局係繞著平面M上之軸A呈現對稱。在此變換例之一較佳實施例中，軸A與軸B交叉，並且分別徑向地從真空系統或轉盤之中心軸B延伸。 In a preferred embodiment, the magnet system that can achieve this purpose has a basic form as shown in FIG. 2, which is a top view. In essence, it consists of two turns of magnets, one surrounding the other and having opposite polarities. It is shown in dashed lines in Figure 2, and during operation, the plasma channel is essentially trapped between the magnetic arches generated by the two rings of magnets. Surprisingly, the inventor found that in a preferred embodiment, the two magnet circuits basically have a trapezoidal shape. In a simplified form, it may include at least four sections, where two sections form a straight line and two sections form a circular arc line. Roman numerals I-IV show these sections in Figure 2. The subscript o represents the outer ring of the magnet, and the dotted separation line is effective. The inner ring has its own segment angle distribution, but the basic method described above is used. The transition area between the two sections may have a curved section to smooth the bending of the plasma circuit during operation. In a variant, the layout of the magnet system is symmetrical about the axis A on the plane M. In a preferred embodiment of this modification, the axis A crosses the axis B and extends radially from the central axis B of the vacuum system or the turntable, respectively.

圖4說明進一步之發明特徵，其顯示圖3之部分。相同圖式代表相同技術成分。上視圖之磁鐵裝置11係顯示具有對稱軸A以及線K。線K與軸C交叉，並且躺在平面M上，其基本上將區域10分成兩半。因此，磁鐵裝置11所包圍之區域亦被分離成區域17徑向地較區域16來得靠近軸B，區域16延伸遠離中心(如軸A之箭頭所示)。根據本發明，區域16必須大於區域17，以允許基板之均勻塗佈以及補償基板通過塗層源14下方之彎曲弧形路徑時所產生之系統性不均勻性。為本發明 之目的，區域16、17之邊緣可以由外或內磁鐵迴路所定義之線來選擇。 FIG. 4 illustrates a further inventive feature, which shows the part of FIG. 3. The same schema represents the same technical components. The magnet device 11 in the upper view shows that it has a symmetry axis A and a line K. The line K intersects the axis C and lies on the plane M, which basically divides the area 10 in half. Therefore, the area surrounded by the magnet device 11 is also separated into the area 17 which is radially closer to the axis B than the area 16, and the area 16 extends away from the center (as indicated by the arrow of the axis A). According to the present invention, the area 16 must be larger than the area 17 to allow uniform coating of the substrate and compensate for the systematic non-uniformity generated when the substrate passes through the curved arc path under the coating source 14. For the invention For the purpose, the edges of the areas 16, 17 can be selected by the lines defined by the outer or inner magnet circuits.

本說明書已顯示，使用上述包括靜態磁鐵系統之處理系統，基板係靜止於連續旋轉之轉盤上，可以在SiO2靶材之6”晶圓之等效基板區域上獲得小於1%之塗層均勻性。在等效之條件下，對於Nb2O5可獲得1.3%之均勻性，而且對於SiN可獲得2.3%之均勻性。 This manual has shown that using the above-mentioned processing system including a static magnet system, the substrate is stationary on a continuously rotating turntable, and a coating uniformity of less than 1% can be obtained on the equivalent substrate area of the 6" wafer of the SiO 2 target. Performance. Under equivalent conditions, a uniformity of 1.3% can be obtained for Nb 2 O 5 and a uniformity of 2.3% for SiN.

當基板與基板旋轉機構一起旋轉時，可以獲得甚至較好的性能。對於大於6”的晶圓，可以獲得低於1%之均勻性。 When the substrate is rotated together with the substrate rotating mechanism, even better performance can be obtained. For wafers larger than 6", uniformity of less than 1% can be obtained.

1‧‧‧轉盤 1‧‧‧Turntable

2-9‧‧‧支撐件 2-9‧‧‧Support

10‧‧‧區域 10‧‧‧area

11‧‧‧磁鐵裝置 11‧‧‧Magnet device

12‧‧‧容器 12‧‧‧Container

13、23‧‧‧開孔 13, 23‧‧‧Opening

14‧‧‧PVD沉積源 14‧‧‧PVD deposition source

15‧‧‧靶材 15‧‧‧Target

A、B、C‧‧‧軸 A, B, C‧‧‧axis

M、P‧‧‧平面 M, P‧‧‧Plane

i‧‧‧內部 i‧‧‧Internal

e‧‧‧外部 e‧‧‧External

Claims (9)

一種真空處理設備，包括：一真空處理容器(12)，具有至少一可密封的圓形開孔(13)，其介於該容器(12)之內部(i)與外部(e)之間，該容器(12)包圍一轉盤(1)，該轉盤(1)沿著其表面定義一平面(P)；可繞著垂直該平面(P)之一中心軸(B)驅動地旋轉；以及具有複數個圓形基板支撐件(2-9)；該至少一開孔(13)係被配置成使得在該轉盤(1)旋轉期間，該等基板支撐件(2-9)之每一者的區域與該開孔(13)係彼此完全對齊而且完全面對；一PVD沉積源(14)，附接於該至少一開孔(13)；該PVD沉積源具有至少一圓形的靶材(15)以及一靜態磁鐵裝置(11)，該磁鐵裝置(11)被配置於一平行於該平面(P)之平面(M)；以及並未繞著一中心軸(C)呈旋轉對稱，該中心軸(C)延伸穿過該磁鐵裝置之中心，並且垂直於該平面(M)；其中該磁鐵裝置(11)係繞著該平面(M)上之任意對稱軸(A)呈現不對稱，且該磁鐵裝置(11)包括兩個磁鐵之閉迴路，每個迴路具有相同之極性以及在兩個迴路之間具有相反之極性，一個迴路環繞另一個迴路，形成一外迴路以及一內迴路，其 中該外迴路係環繞中心軸(C)以及兩個磁鐵之迴路係繞著該平面(M)上之任意對稱軸(A)而呈現不對稱。 A vacuum processing equipment includes: a vacuum processing container (12) with at least one sealable circular opening (13), which is located between the inside (i) and the outside (e) of the container (12), The container (12) surrounds a turntable (1), the turntable (1) defines a plane (P) along its surface; can be driven to rotate around a central axis (B) perpendicular to the plane (P); and A plurality of circular substrate supports (2-9); the at least one opening (13) is configured so that during the rotation of the turntable (1), each of the substrate supports (2-9) The area and the opening (13) are completely aligned with each other and completely facing each other; a PVD deposition source (14) is attached to the at least one opening (13); the PVD deposition source has at least one circular target ( 15) and a static magnet device (11), the magnet device (11) is arranged on a plane (M) parallel to the plane (P); and is not rotationally symmetric about a central axis (C), the The central axis (C) extends through the center of the magnet device and is perpendicular to the plane (M); wherein the magnet device (11) is asymmetric about any symmetry axis (A) on the plane (M), And the magnet device (11) includes two closed loops of magnets, each loop has the same polarity and opposite polarity between the two loops, one loop surrounds the other loop, forming an outer loop and an inner loop, That The middle and outer loops surround the central axis (C) and the loops of the two magnets are asymmetrical about any symmetry axis (A) on the plane (M). 如請求項1之真空處理設備，其中磁鐵裝置(11)所包圍的區域可沿著與軸(C)垂直地交叉之平面(M)上的一線(K)，被分離成遠離該轉盤之中心之一區域(16)與朝向該轉盤之中心之一區域(17)，其中該區域(16)係大於該區域(17)。 The vacuum processing equipment of claim 1, wherein the area enclosed by the magnet device (11) can be separated along a line (K) on a plane (M) perpendicular to the axis (C) and separated away from the center of the turntable An area (16) and an area (17) facing the center of the turntable, wherein the area (16) is larger than the area (17). 如請求項1或2之真空處理設備，其中不需要掩蔽物、塑形器或遮蔽物來改善該PVD沉積源(14)之沉積均勻性。 Such as the vacuum processing equipment of claim 1 or 2, which does not require masks, shapers or masks to improve the deposition uniformity of the PVD deposition source (14). 如請求項1或2之真空處理設備，其中該磁鐵裝置(11)之每個迴路包括至少四個區段，其中兩區段形成一直線而且兩區段形成一圓弧。 Such as the vacuum processing equipment of claim 1 or 2, wherein each loop of the magnet device (11) includes at least four sections, wherein two sections form a straight line and the two sections form an arc. 如請求項1或2之真空處理設備，其中該磁鐵裝置(11)包括兩個磁鐵之閉迴路，每個迴路具有相同之極性以及在兩個迴路之間具有相反之極性，一迴路環繞另一迴路並且兩者均環繞中心軸(C)。 Such as the vacuum processing equipment of claim 1 or 2, wherein the magnet device (11) includes two closed loops of magnets, each loop having the same polarity and opposite polarity between the two loops, one loop surrounding the other Loop and both surround the central axis (C). 如請求項1或2之真空處理設備，其中該磁鐵裝置(11)之每個迴路包括至少四個區段，其中兩個區段形成一圓弧，其繞著該磁鐵裝置之中心軸(C)，且在圓弧區段之第一對相對端之間之一個區段包括或形成一直線，以及在該圓弧區段之第二對相對端之間之一個區段包括或形成朝向該磁鐵裝置之該中心軸(C)或繞著該磁鐵裝置之該中心軸(C)之向內界定的一線。 Such as the vacuum processing equipment of claim 1 or 2, wherein each circuit of the magnet device (11) includes at least four sections, two of which form an arc, which surrounds the central axis (C ), and a section between the first pair of opposite ends of the arc section includes or forms a straight line, and a section between the second pair of opposite ends of the arc section includes or forms toward the magnet The central axis (C) of the device or a line defined inwardly around the central axis (C) of the magnet device. 如請求項6之真空處理設備，其中一個圓弧區段相對於該轉盤之中心軸(B)形成該磁鐵裝置之一最內區段，而且一個圓弧區段相對於該轉盤之中心軸(B)形成該磁鐵裝置之一最外區段。 For example, in the vacuum processing equipment of claim 6, one of the arc sections forms an innermost section of the magnet device relative to the central axis (B) of the turntable, and one arc section is relative to the central axis of the turntable ( B) Form one of the outermost sections of the magnet device. 如請求項7之真空處理設備，其中至少一圓弧區段係相對於與該轉盤之中心軸(B)交叉之對稱軸(A)呈現對稱。 Such as the vacuum processing equipment of claim 7, wherein at least one arc section is symmetrical with respect to the symmetry axis (A) intersecting the central axis (B) of the turntable. 一種用於在如請求項1至8中任一項之真空處理設備中處理基板的方法，該方法包括裝載至少一基板進入該真空處理設備於該等基板支撐件(2-9)之至少一者上，以及至少在從該PVD沉積源(14)濺鍍沉積材料於該至少一基板上時，以連續而不中斷之運動使該轉盤繞著其中心軸(B)旋轉。 A method for processing a substrate in a vacuum processing device as claimed in any one of claims 1 to 8, the method comprising loading at least one substrate into the vacuum processing device on at least one of the substrate supports (2-9) In addition, and at least when sputtering deposition material from the PVD deposition source (14) on the at least one substrate, the turntable is rotated around its central axis (B) in a continuous and uninterrupted motion.
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