TWI731993B - Measuring device - Google Patents

Measuring device Download PDF

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TWI731993B
TWI731993B TW106121252A TW106121252A TWI731993B TW I731993 B TWI731993 B TW I731993B TW 106121252 A TW106121252 A TW 106121252A TW 106121252 A TW106121252 A TW 106121252A TW I731993 B TWI731993 B TW I731993B
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light
component
optical fiber
optical
plate
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TW106121252A
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TW201805590A (en
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能丸圭司
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

本發明之課題在於提供一種測量裝置，其可以在短時間內有效率地測量板狀物的厚度或高度。 The subject of the present invention is to provide a measuring device that can efficiently measure the thickness or height of a plate in a short time.

根據本發明所提供之測量裝置，至少是由寬頻光源、分光器、分配組件、聚光透鏡、光傳輸組件、測定端子、光分歧組件、分光干涉波形生成組件、及計算組件所構成；該寬頻光源會發出對板狀物具有穿透性之波長區的光；該分光器是將該寬頻帶光源所發出之光在波長區進行分光；該分配組件是將藉由該分光器所分光之各波長的光以經過時間來變更分配方向；該聚光透鏡是將藉由該分配組件所分配之各波長的光聚光；該光傳輸組件是與該聚光透鏡相向，且傳輸藉由該聚光透鏡所聚光之各波長的光；該測定端子具備有鏡子與複數個接物透鏡，該鏡子是將構成該光傳輸組件之複數條光纖的另一端之端面分歧成2條路徑而配設在複數個第1端面並生成於該光纖逆行的第1返回光，該等接物透鏡是相向於該板狀物而成列且對應於複數個第2端面而配設；該光分歧組件是將在該板狀物之上表面反射之光與穿透板狀物而在下表面反射之光於各光纖逆行的第2返回光、及該第1返回光，配設於光傳輸組件之光的傳輸路徑上以從各光纖進行分歧；該分光干涉波形生成組件是從藉由該分配組件對各光纖分配之時間中對該第1返回光與該第2返回光之波長，檢測各波長之光的強度，以對應於各光纖生成分光干涉波形；該計算組件是對該分光干涉波形生成組件所生成之對應於各光纖的分光干涉波形進行波形解析，以計算板狀物的厚度或高度。 The measurement device provided according to the present invention is at least composed of a broadband light source, a beam splitter, a distribution component, a condenser lens, an optical transmission component, a measuring terminal, an optical branching component, a light splitting interference waveform generation component, and a calculation component; the broadband The light source emits light in the wavelength region that is transparent to the plate; the beam splitter is to split the light emitted by the broadband light source in the wavelength region; the distribution component is to split the light by the beam splitter The light of the wavelength changes the distribution direction with the elapsed time; the condensing lens condenses the light of each wavelength distributed by the distributing component; the light transmission component faces the condensing lens, and transmits through the condensing lens. The light of each wavelength condensed by the optical lens; the measuring terminal is equipped with a mirror and a plurality of objective lenses, and the mirror is arranged by dividing the end surface of the other end of the plurality of optical fibers constituting the optical transmission component into two paths The first returning light generated in the retrograde direction of the optical fiber on the plurality of first end faces, the objective lenses are arranged in rows facing the plate and corresponding to the plurality of second end faces; the light branching component is The light reflected on the upper surface of the plate and the light reflected on the lower surface of the plate are retrograde to the second return light of each optical fiber, and the first return light, which are arranged in the light of the optical transmission component The transmission path is branched from each optical fiber; the light splitting interference waveform generation component detects the wavelengths of the first return light and the second return light from the time allocated to each optical fiber by the distribution component The intensity of, to generate a spectral interference waveform corresponding to each optical fiber; the calculation component is to perform waveform analysis on the spectral interference waveform corresponding to each optical fiber generated by the spectral interference waveform generation component to calculate the thickness or height of the plate.

Description

測量裝置 Measuring device

發明領域 Field of invention

本發明是有關於一種測量板狀物之厚度、或高度的測量裝置。 The invention relates to a measuring device for measuring the thickness or height of a plate.

發明背景 Background of the invention

在將IC、LSI等複數個器件以分割預定線區劃出而形成於正面之晶圓，是在被磨削背面而形成預定的厚度之後，藉由切割裝置、雷射加工裝置來分割成一個個的器件，以利用於行動電話、個人電腦等電氣機器上。 The wafer formed on the front side by dividing a plurality of devices such as IC, LSI, etc. with predetermined dividing lines is grounded on the back side to form a predetermined thickness, and then divided into individual pieces by a dicing device and a laser processing device. The devices can be used in electrical equipment such as mobile phones and personal computers.

相對於以往的磨削裝置，已提出有下述的技術方案：藉由至少具備保持板狀的晶圓的工作夾台、將磨削被保持在該工作夾台上之晶圓的背面的磨削磨石配置成環狀的磨削輪以可旋轉的方式設置的磨削組件、及藉由分光干涉波形以非接觸方式來檢測晶圓的高度、厚度的檢測組件，以將晶圓磨削成所期望之厚度或高度(參照例如專利文獻1)。 Compared with the conventional grinding device, the following technical solution has been proposed: by having at least a work chuck table holding a plate-shaped wafer, grinding the back of the wafer held on the work chuck table The grinding stone is arranged in a ring-shaped grinding wheel that is rotatably arranged in a grinding assembly, and a detection assembly that detects the height and thickness of the wafer in a non-contact manner by using a spectral interference waveform to grind the wafer To a desired thickness or height (see, for example, Patent Document 1).

先前技術文獻 Prior art literature 專利文獻 Patent literature

專利文獻1：日本專利特開2011-143488號公報 Patent Document 1: Japanese Patent Laid-Open No. 2011-143488

發明概要 Summary of the invention

然而，在上述專利文獻1所記載之技術中，是形成為讓檢測被保持在保持組件上之晶圓的厚度、或高度的端子在水平方向上擺動來檢測晶圓整體之構成，在必須進行要一面適當地重複水平方向的擺動、與晶圓之移動的測量的情形下，為了使用這樣的組件來檢測晶圓整體的厚度、或高度，需要花相當的時間，而有生產性較差的問題。 However, in the technique described in Patent Document 1, it is formed so that the terminal for detecting the thickness or height of the wafer held on the holding unit is swung in the horizontal direction to inspect the entire wafer. When it is necessary to appropriately repeat the horizontal swing and wafer movement measurement, it takes a considerable amount of time to detect the thickness or height of the entire wafer using such a device, and there is a problem of poor productivity. .

本發明是有鑒於上述事實而作成的發明，其主要的技術課題在於提供一種測量裝置，其可在短時間內有效率地測量板狀物的厚度或高度。 The present invention is made in view of the above facts, and its main technical subject is to provide a measuring device that can efficiently measure the thickness or height of a plate in a short time.

為了解決上述主要的技術課題，根據本發明可提供一種測量裝置，其為測量板狀物的厚度或高度的測量裝置，且至少是由下述所構成：寬頻光源，發出對板狀物具有穿透性之波長區的光；分光器，將該寬頻光源所發出之光在波長區進行分光；分配組件，將藉由該分光器所分光之各波長的光以經過時間來變更分配方向；聚光透鏡，將藉由該分配組件所分配之各波長的光聚光；光傳輸組件，與該聚光透鏡相向，且將複數條光纖的 一端的端面成列配設，以傳輸藉由該聚光透鏡所聚光之各波長的光；測定端子，將構成該光傳輸組件之複數條光纖的另一端之端面分歧成2條路徑，並具備有鏡子與複數個接物透鏡，該鏡子是配設在複數個第1端面並生成於該光纖逆行的第1返回光，該等接物透鏡是相向於該板狀物而成列且對應於複數個第2端面而配設；光分歧組件，配設於光傳輸組件之光的傳輸路徑上，並將在該板狀物之上表面反射之光與穿透板狀物而在下表面反射之光於各光纖逆行的第2返回光、及該第1返回光，從各光纖進行分歧；分光干涉波形生成組件，將在該光分歧組件所分歧之對應於各光纖的該第1返回光與該第2返回光之波長從藉由該分配組件對各光纖分配之時間起，檢測各波長之光的強度，並對應於各光纖生成分光干涉波形；及計算組件，對該分光干涉波形生成組件所生成之對應於各光纖的分光干涉波形進行波形解析，以計算對應於各光纖之板狀物的表面高度或厚度。 In order to solve the above-mentioned main technical problems, according to the present invention, a measuring device can be provided, which is a measuring device for measuring the thickness or height of a plate, and is at least composed of the following: a broadband light source, which emits light that penetrates the plate. Transparency of light in the wavelength region; a beam splitter, which splits the light emitted by the broadband light source in the wavelength region; a distribution component, which changes the distribution direction of the light of each wavelength divided by the beam splitter with the elapse of time; The optical lens condenses the light of each wavelength distributed by the distributing component; the optical transmission component faces the condensing lens and divides the light of a plurality of optical fibers The end faces of one end are arranged in rows to transmit the light of each wavelength condensed by the condenser lens; the measuring terminal divides the end faces of the other end of the plurality of optical fibers constituting the optical transmission assembly into 2 paths, and Equipped with a mirror and a plurality of objective lenses, the mirrors are arranged on a plurality of first end faces and generate the first return light retrograde of the optical fiber, and the objective lenses are arranged in rows facing the plate and corresponding It is arranged on a plurality of second end surfaces; the light branching component is arranged on the light transmission path of the light transmission component, and reflects the light reflected on the upper surface of the plate and penetrating the plate to reflect on the lower surface The second return light and the first return light that are retrograde to each optical fiber are branched from each optical fiber; the light splitting interference waveform generation component will be branched by the optical branching component to correspond to the first return light of each optical fiber With the wavelength of the second return light from the time when the distribution component is distributed to each optical fiber, the intensity of the light of each wavelength is detected, and the spectral interference waveform is generated corresponding to each optical fiber; and the calculation component generates the spectral interference waveform The spectral interference waveform generated by the component corresponding to each optical fiber is analyzed for waveform to calculate the surface height or thickness of the plate corresponding to each optical fiber.

又，較理想的是形成為：具備有保持該板狀物之保持組件，且將該測定端子與該保持組件構成為可在X軸方向上相對地移動，構成該測定端子之對應於各光纖的端面而配設之接物透鏡之列，是定位在與X軸方向正交之Y軸方向上，並且具備儲存組件，該儲存組件是在以該測定端子和該保持組件之相對的X軸方向之移動、與定位 於Y軸方向之接物透鏡所特定之X座標、Y座標中，儲存以該厚度計算組件所計算出之板狀物的厚度。 Moreover, it is preferable to form a holding member for holding the plate, and the measurement terminal and the holding member are configured to be relatively movable in the X-axis direction, and each optical fiber corresponding to the measurement terminal is formed. The column of the objective lens arranged on the end surface of the lens is positioned in the Y-axis direction orthogonal to the X-axis direction, and is equipped with a storage component that is positioned on the opposite X-axis between the measuring terminal and the holding component Direction of movement and positioning Store the thickness of the plate calculated by the thickness calculation component in the X coordinate and Y coordinate specified by the objective lens in the Y axis direction.

本發明之測量裝置至少是由寬頻光源、分光器、分配組件、聚光透鏡、光傳輸組件、測定端子、光分歧組件、分光干涉波形生成組件、及計算組件所構成，其中該寬頻光源會發出對板狀物具有穿透性之波長區的光，該分光器是將該寬頻光源所發出之光在波長區進行分光，該分配組件是將藉由該分光器所分光之各波長之光以經過時間來變更分配方向，該聚光透鏡是將藉由該分配組件所分配之各波長的光聚光，該光傳輸組件是與該聚光透鏡相向，且將複數條光纖的一端之端面成列配設，以傳輸藉由該聚光透鏡聚光之各波長的光，該測定端子將構成該光傳輸組件之複數條光纖的另一端之端面分歧成2條路徑，並具備有鏡子與複數個接物透鏡，該鏡子是配設在複數個第1端面並生成於該光纖逆行的第1返回光，該等接物透鏡是相向於該板狀物而成列且對應於複數個第2端面而配設，該光分歧組件是配設於光傳輸組件之光的傳輸路徑上，並將在該板狀物之上表面反射之光與穿透板狀物而在下表面反射之光於各光纖逆行的第2返回光、及該第1返回光，從各光纖進行分歧，該分光干涉波形生成組件是將在該光分歧組件所分歧之對應於各光纖的該第1返回光與該第2返回光之波長從藉由該分配組件對各光纖分配之時間起，檢測各波長之光強度，並對應於各光纖生成分光干涉波形， 該計算組件是對該分光干涉波形生成組件所生成之對應於各光纖的分光干涉波形進行波形解析，以計算對應於各光纖之板狀物的表面高度或厚度，因此可藉由成複數列而配設之複數個接物透鏡與複數條光纖而同時得到複數個厚度資訊、或高度資訊，且變得可在短時間內進行必要的測量。 The measuring device of the present invention is at least composed of a broadband light source, a beam splitter, a distribution component, a condenser lens, an optical transmission component, a measuring terminal, an optical branch component, a spectral interference waveform generation component, and a calculation component, wherein the broadband light source emits For the light of the transparent wavelength region of the plate, the beam splitter is to split the light emitted by the broadband light source in the wavelength region, and the distributing component is to divide the light of each wavelength divided by the beam splitter into The distribution direction is changed over time. The condensing lens condenses the light of each wavelength distributed by the distribution component. The optical transmission component faces the condensing lens and forms the end faces of one end of the plurality of optical fibers. It is arranged in rows to transmit light of each wavelength condensed by the condenser lens. The measuring terminal divides the end faces of the other ends of the plurality of optical fibers constituting the optical transmission component into 2 paths, and is equipped with mirrors and plural Objective lenses, the mirrors are arranged on a plurality of first end faces and generate the first return light of the optical fiber retrograde, the objective lenses are arranged facing the plate and correspond to the plurality of second The light branching component is arranged on the light transmission path of the light transmission component, and the light reflected on the upper surface of the plate and the light reflected on the lower surface of the plate are distributed to each The second return light of the retrograde optical fiber and the first return light are branched from each optical fiber, and the light splitting interference waveform generating module is to combine the first return light corresponding to each optical fiber and the first return light branched by the optical branching module. 2 The wavelength of the return light starts from the time when the optical fiber is distributed by the distribution component, the light intensity of each wavelength is detected, and the spectral interference waveform is generated corresponding to each optical fiber. The calculation component is to perform waveform analysis on the spectral interference waveform corresponding to each optical fiber generated by the spectral interference waveform generation component to calculate the surface height or thickness of the plate corresponding to each optical fiber. A plurality of objective lenses and a plurality of optical fibers are provided to obtain a plurality of thickness information or height information at the same time, and it becomes possible to perform necessary measurements in a short time.

1:磨削裝置 1: Grinding device

2:裝置殼體 2: Device housing

10:晶圓 10: Wafer

10b:背面 10b: back

12:保護膠帶 12: Protective tape

20:控制組件 20: Control components

21:主部 21: Main part

22:直立壁 22: upright wall

3:磨削單元 3: Grinding unit

31:移動基台 31: Mobile abutment

4:主軸單元 4: Spindle unit

41:主軸殼體 41: Spindle housing

42:旋轉主軸 42: Rotating spindle

43:伺服馬達 43: Servo motor

44:輪座 44: wheel seat

5:磨削輪 5: Grinding wheel

51:磨削磨石 51: Grinding grindstone

6:磨削單元進給機構 6: Grinding unit feed mechanism

61:公螺桿 61: Male screw

62:脈衝馬達 62: Pulse motor

7:工作夾台機構 7: Work clamping table mechanism

71:工作夾台 71: work clamp

72:蓋構件 72: cover member

73、74:伸縮罩組件 73, 74: telescopic cover assembly

70a:被加工物載置區 70a: Placement area for processed objects

70b:磨削區 70b: Grinding area

8:測量裝置 8: Measuring device

8a、8b、8c:光 8a, 8b, 8c: light

8d:第1路徑 8d: 1st path

8e:第2路徑 8e: second path

8f:第3路徑 8f: 3rd path

80:測量殼體 80: measuring case

81:發光源 81: luminous source

82:分光器 82: Splitter

83:多面鏡 83: Polygonal mirror

83a、83b:反射面 83a, 83b: reflective surface

84:聚光透鏡 84: Condenser lens

85:保持構件 85: holding member

86:光分歧組件 86: Optical branch component

87:測定端子 87: Measuring terminal

87a:分歧部 87a: Division

87b:聚光部 87b: Condenser

88:物鏡 88: Objective

89:鏡子 89: Mirror

90:線型影像感測器 90: Linear image sensor

F(1)~F(8):分光干涉波形 F(1)~F(8): Spectral interference waveform

t、t1、t2、t3、t4:時間 t, t1, t2, t3, t4: time

L1、L2、L3:光路長度 L1, L2, L3: optical path length

d:光路長度差 d: difference in optical path length

d1:第1光路長度差 d1: The first optical path length difference

d2:第2光路長度差 d2: The second optical path length difference

d3:第3光路長度差 d3: The third optical path length difference

T:厚度 T: thickness

h:高度 h: height

a、b、c:訊號 a, b, c: signal

λ:反射光波長 λ: wavelength of reflected light

X、Y、Z:方向 X, Y, Z: direction

圖1是根據本發明所構成之測量裝置可適用的磨削裝置的立體圖。 Fig. 1 is a perspective view of a grinding device to which the measuring device constructed according to the present invention can be applied.

圖2是用於說明根據本發明所構成之測量裝置之構成的說明圖。 Fig. 2 is an explanatory diagram for explaining the structure of a measuring device constructed according to the present invention.

圖3(a)~(c)是用於說明圖2所示之測量裝置的作用的說明圖。 3(a)~(c) are explanatory diagrams for explaining the function of the measuring device shown in FIG. 2.

圖4是用於說明構成圖3所示之測量裝置的多面鏡的作用的說明圖。 Fig. 4 is an explanatory diagram for explaining the function of the polygon mirror constituting the measuring device shown in Fig. 3.

圖5是顯示藉由圖2所示之測量裝置所生成的分光干涉波形之一例的圖。 Fig. 5 is a diagram showing an example of a spectral interference waveform generated by the measuring device shown in Fig. 2.

圖6是顯示藉由以圖2所示之測量裝置對分光干涉波形進行波形解析而得到的光路長度差和訊號強度之一例的圖。 FIG. 6 is a diagram showing an example of optical path length difference and signal intensity obtained by performing waveform analysis on the spectral interference waveform with the measuring device shown in FIG. 2.

圖7是顯示藉由本發明的測量裝置，而按每條光纖取得的晶圓之高度、及厚度之一例的圖。 FIG. 7 is a diagram showing an example of the height and thickness of a wafer obtained for each optical fiber by the measuring device of the present invention.

用以實施發明之形態 The form used to implement the invention

以下，將參照附加圖式，針對依照本發明所構成之測 量裝置的較佳的實施形態，詳細地進行說明。圖1中所示為，具備有本發明之測量裝置的磨削裝置1的整體立體圖、及藉由本發明之測量裝置來測量厚度或高度之作為板狀物的晶圓10。 Hereinafter, referring to the attached drawings, the test constructed in accordance with the present invention The preferred embodiment of the measuring device will be described in detail. FIG. 1 shows an overall perspective view of a grinding device 1 equipped with a measuring device of the present invention, and a wafer 10 as a plate whose thickness or height is measured by the measuring device of the present invention.

圖1所示之磨削裝置1具備有以標號2來表示整體的裝置殼體。此裝置殼體2具有大致長方體形狀之主部21、及設置於該主部21的後端部(在圖1中為右上端)且朝上方延伸的直立壁22。在直立壁22的前表面，以可朝上下方向移動的方式裝設有作為磨削組件的磨削單元3。 The grinding device 1 shown in FIG. 1 is provided with a device casing denoted by the reference numeral 2 as a whole. The device housing 2 has a main portion 21 having a substantially rectangular parallelepiped shape, and a vertical wall 22 provided at the rear end portion (the upper right end in FIG. 1) of the main portion 21 and extending upward. On the front surface of the upright wall 22, a grinding unit 3 as a grinding unit is installed so as to be movable in the up and down direction.

磨削單元3具備有移動基台31、與裝設在該移動基台31的主軸單元4。移動基台31是構成為與配設在直立壁22之一對引導軌道可滑動地卡合。像這樣，在可滑動地裝設在設置於直立壁22之一對該引導軌道上的移動基台31的前表面上，可透過朝前方突出之支撐部而安裝作為磨削組件的主軸單元4。 The grinding unit 3 includes a moving base 31 and a spindle unit 4 installed on the moving base 31. The movable base 31 is configured to be slidably engaged with a pair of guide rails arranged on the upright wall 22. In this way, on the front surface of the moving base 31 slidably installed on one of the upright walls 22 on the guide rail, the spindle unit 4 as a grinding unit can be installed through the support portion protruding forward. .

該主軸單元4具備有主軸殼體41、旋轉自如地配設在該主軸殼體41之旋轉主軸42、及用於驅動旋轉該旋轉主軸42之作為驅動源的伺服馬達43。可旋轉地支撐於該主軸殼體41之旋轉主軸42，是將一端部(圖1中為下端部)從主軸殼體41的下端突出而配設，且於下端部設置有輪座44。並且，將磨削輪5安裝在此輪座44的下表面。在此磨削輪5的下表面配設有由複數個磨輪片(segment)所構成的磨削磨石51。 The spindle unit 4 includes a spindle housing 41, a rotating spindle 42 rotatably arranged on the spindle housing 41, and a servo motor 43 as a drive source for driving and rotating the rotating spindle 42. The rotating main shaft 42 rotatably supported by the main shaft housing 41 is provided with one end (the lower end in FIG. 1) protruding from the lower end of the main shaft housing 41, and a wheel seat 44 is provided at the lower end. In addition, the grinding wheel 5 is mounted on the lower surface of this wheel base 44. On the lower surface of the grinding wheel 5, a grinding stone 51 composed of a plurality of grinding wheel segments is arranged.

圖示之磨削裝置1具備有使磨削單元3沿著 該一對引導軌道朝上下方向(相對於後述之工作夾台的保持面垂直方向)移動的磨削單元進給機構6。該磨削單元進給機構6具備配設於直立壁22的前側且實質上鉛直地延伸的公螺桿61、及用於旋轉驅動該公螺桿61之作為驅動源的脈衝馬達62，且由設置在該移動基台31之背面的圖未示的公螺桿61之軸承構件等所構成。當此脈衝馬達62正轉時，會使移動基台31(即研磨單元3)下降(亦即使其前進)，且當脈衝馬達62逆轉時，會使移動基台31(即磨削單元3)上升(亦即使其後退)。 The grinding device 1 shown in the figure is equipped with a grinding unit 3 along The grinding unit feed mechanism 6 that moves the pair of guide rails in the vertical direction (the direction perpendicular to the holding surface of the work chuck table described later). The grinding unit feed mechanism 6 includes a male screw 61 that is arranged on the front side of the upright wall 22 and extends substantially vertically, and a pulse motor 62 as a driving source for rotationally driving the male screw 61, and is installed in The back of the movable base 31 is composed of a bearing member of a male screw 61 not shown in the figure. When the pulse motor 62 rotates forward, the moving base 31 (that is, the grinding unit 3) will be lowered (even if it moves forward), and when the pulse motor 62 is reversed, the moving base 31 (that is, the grinding unit 3) will be moved. Ascend (even if it retreats).

於上述殼體2的主部21配設有保持作為被加工物之板狀物(晶圓10)之作為保持組件的工作夾台機構7。工作夾台機構7具備有工作夾台71、覆蓋該工作夾台71之周圍的蓋構件72、和配設在該蓋構件72之前後的伸縮罩組件73及74。工作夾台71是構成為在其上表面(保持面)上藉由作動圖未示之吸引組件而吸引保持晶圓10。此外，將工作夾台71藉由圖未示之旋轉驅動組件而可旋轉地構成，並且藉由圖未示之工作夾台移動組件而使其可在圖1所示之被加工物載置區70a、及與磨削輪5相向之磨削區70b之間(以箭頭X所示之X軸方向上)移動。 The main part 21 of the housing 2 is provided with a work chuck mechanism 7 as a holding means for holding a plate-like object (wafer 10) as a workpiece. The work chuck mechanism 7 includes a work chuck 71, a cover member 72 covering the periphery of the work chuck 71, and telescopic cover assemblies 73 and 74 arranged in front of and behind the cover member 72. The work chuck table 71 is configured to suck and hold the wafer 10 on the upper surface (holding surface) of the work chuck table 71 by a suction unit (not shown in the drawing). In addition, the work chuck table 71 is rotatably constructed by a rotating drive assembly not shown in the figure, and can be placed in the processing object placement area shown in FIG. 1 by the work chuck table moving assembly not shown in the figure. Move between 70a and the grinding area 70b facing the grinding wheel 5 (in the X-axis direction indicated by the arrow X).

再者，上述之伺服馬達43、脈衝馬達62、圖未示之工作夾台移動組件等，是受後述之控制組件20所控制。又，圖示之實施形態中，晶圓10在外周部形成有表示結晶方位的凹口(notch)，在其正面貼附有作為保護構件之保護膠帶12，且將此保護膠帶12側保持在工作夾台71的上 表面(保持面)。 Furthermore, the above-mentioned servo motor 43, pulse motor 62, work clamp table moving assembly not shown in the figure, etc., are controlled by the control assembly 20 described later. In addition, in the embodiment shown in the figure, the wafer 10 is formed with a notch (notch) indicating the crystal orientation on the outer peripheral portion, and a protective tape 12 as a protective member is attached to the front surface of the wafer 10, and the protective tape 12 is held on the side On the work clamp table 71 Surface (holding surface).

圖示之磨削裝置1具備有測量被保持在工作夾台71之晶圓10的厚度、高度的測量裝置8。此測量裝置8是內置於測量殼體80內，且測量殼體80是如圖所示地在構成裝置殼體2之長方體形狀的主部21之上表面，配設在使工作夾台71從被加工物載置區域70a移動至磨削區70b之間的路徑途中的側邊，且以工作夾台71於被加工物載置區域70a與磨削區70b之間移動之時，可從上方測量被保持在工作夾台71上的晶圓10之整體的方式配置。參照圖2進一步說明該測量裝置8。 The grinding device 1 shown in the figure is provided with a measuring device 8 for measuring the thickness and height of the wafer 10 held by the work chuck 71. The measuring device 8 is built in the measuring housing 80, and the measuring housing 80 is arranged on the upper surface of the main part 21 of the rectangular parallelepiped shape constituting the device housing 2 as shown in the figure, and is arranged so that the work clamp table 71 is removed from When the workpiece placement area 70a moves to the side of the path between the grinding areas 70b, and the work clamp 71 is used to move between the workpiece placement area 70a and the grinding area 70b, it can be moved from above It is arranged to measure the entire wafer 10 held on the work chuck 71. The measuring device 8 is further explained with reference to FIG. 2.

圖示之實施形態中的測量裝置8具備有作為寬頻光源的發光源81、及分光器82，該作為寬頻光源的發光源81會發出對作為被加工物之晶圓10具有穿透性之包含預定的波長範圍(例如波長1000nm~1100nm)之光，該分光器82會將來自該發光源81的光8a反射並且於預定之波長範圍進行分光。該發光源81可以選擇LED、SLD(超發光二極體(Superluminescent diode))、ASE(放大自發放射(Amplified Spontaneous Emission))、SC(超連續光譜(Supercontinuum))、鹵素光源等。該分光器82是藉由繞射光柵所構成，且藉由該繞射光柵的作用，將由1000nm~1100nm波長所構成之光8a分光，而形成具有預定之展寬的光8b。該光8b可被分光成藉由於圖中下方側較短之波長(1000nm)、於上方側較長之波長(1100nm)的光所構成。 The measuring device 8 in the embodiment shown in the figure is provided with a light-emitting source 81 as a broadband light source and a beam splitter 82. The light-emitting source 81 as a broadband light source emits a light-emitting source that is transparent to the wafer 10 as a workpiece. For light with a predetermined wavelength range (for example, a wavelength of 1000 nm to 1100 nm), the beam splitter 82 reflects the light 8a from the light source 81 and splits the light in the predetermined wavelength range. The light-emitting source 81 can be selected from LED, SLD (Superluminescent diode), ASE (Amplified Spontaneous Emission), SC (Supercontinuum), halogen light source, and the like. The beam splitter 82 is composed of a diffraction grating, and by the action of the diffraction grating, the light 8a composed of the wavelength of 1000 nm to 1100 nm is split to form the light 8b having a predetermined broadening. The light 8b can be divided into light having a shorter wavelength (1000 nm) on the lower side in the figure and a longer wavelength (1100 nm) on the upper side in the figure.

由分光器82所分光並反射的光8b，是藉由具有將各波長之光以經過時間來變更其分配方向之功能的分配組件來進行反射。該分配組件是由各邊為藉由反射面(鏡子(mirror))所形成之由例如正8面體形成之多面鏡83所構成，並且該多面鏡83是構成為於圖中朝順時針方向以預定之旋轉速度旋轉。入射到多面鏡83之反射面的光8b，是以預定之展寬被反射並成為光8c而入射到與多面鏡83之反射面相向而配置的聚光透鏡84。藉由聚光透鏡84而聚光各波長之光的光8c，會入射到以預定間隔依序排列且將端部以保持構件85保持之構成光傳輸組件之例如18條光纖(1)~(18)。再者，可以藉由縮小相對於晶圓之直徑的光纖之直徑，並增加光纖的之條數(例如100條)，以提高後述之測量的解析力。在本實施形態中，當多面鏡83位於如圖2所示之預定的角度位置時，會將在多面鏡83的其中一個反射面上反射之光，全部入射於聚光透鏡84。可將分光器82、多面鏡83、聚光透鏡84、及保持構件85的設置位置、角度等設定成按已分光之每個波長來對保持於該保持構件85之光纖(1)~(18)入射。再者，關於多面鏡83的作用，將隨後詳細敘述。 The light 8b that is split and reflected by the beam splitter 82 is reflected by a distribution element having a function of changing the distribution direction of the light of each wavelength with elapsed time. The distribution component is composed of a polygon mirror 83 formed of, for example, a regular octahedron whose sides are formed by a reflecting surface (mirror), and the polygon mirror 83 is configured to face clockwise in the figure Rotate at a predetermined rotation speed. The light 8b incident on the reflection surface of the polygon mirror 83 is reflected by a predetermined expansion and becomes the light 8c, and then enters the condenser lens 84 arranged opposite to the reflection surface of the polygon mirror 83. The light 8c of each wavelength condensed by the condensing lens 84 is incident on, for example, 18 optical fibers (1)~( 18). Furthermore, by reducing the diameter of the optical fiber relative to the diameter of the wafer, and increasing the number of optical fibers (for example, 100), the resolution of the measurement described later can be improved. In this embodiment, when the polygon mirror 83 is located at the predetermined angular position as shown in FIG. 2, all the light reflected on one of the reflection surfaces of the polygon mirror 83 is incident on the condenser lens 84. The installation positions and angles of the beam splitter 82, the polygon mirror 83, the condenser lens 84, and the holding member 85 can be set to the optical fiber (1) to (18) held by the holding member 85 for each wavelength of the split light. ) Incident. Furthermore, the function of the polygon mirror 83 will be described in detail later.

該測量裝置8具備有光分歧組件86，該光分歧組件86是用於將入射到光纖(1)~(18)之光通過由光纖(1)~(18)所形成之光的第1路徑8d而引導至面向被保持在工作夾台71之晶圓10的第2路徑8e側，並且將在晶圓10反射而於該第2路徑8e逆行之反射光分歧並引導至第3路徑 8f。再者，該第1~第3路徑8d~8f是由光纖(1)~(18)所構成，且光分歧組件86可由例如偏振保持光纖耦合器、偏振保持光纖循環器、單模光纖耦合器等的任一個之中適當選擇。 The measuring device 8 is provided with an optical branching component 86, which is used to pass the light incident on the optical fibers (1) to (18) through the first path of the light formed by the optical fibers (1) to (18) 8d is guided to the second path 8e side facing the wafer 10 held by the work chuck 71, and the reflected light reflected on the wafer 10 and retrograde to the second path 8e is branched and guided to the third path 8f. Furthermore, the first to third paths 8d to 8f are composed of optical fibers (1) to (18), and the optical branching component 86 can be, for example, a polarization maintaining fiber coupler, a polarization maintaining fiber circulator, or a single mode fiber coupler. Choose from any of the others.

透過光分歧組件86而引導至第2路徑8e之光，會被引導至測定端子87，該測定端子87是面對被保持於工作夾台71上之晶圓10。該測定端子87是形成為在Y軸方向上較細長的形狀，且是以覆蓋作為測量對象之晶圓10之直徑的尺寸所形成。又，該測定端子87是以分歧部87a、及聚光部87b所構成，該分歧部87a是將構成該光傳輸組件之複數條光纖(1)~(18)的另一端的端部分歧成2條路徑。於該聚光部87b上設有複數個鏡子89和複數個接物透鏡88，該等鏡子89會生成按在該分歧部87a所分歧之其中一條路徑的每個端部於該光纖(1)~(18)逆行的第1返回光，該等接物透鏡88會將被引導至按在該分歧部87a所分歧之另一條路徑之每個端部的光，引導到被保持在工作夾台71的晶圓10，且將該接物透鏡88及鏡子89配設成在與工作夾台71移動之方向(X軸方向)正交的方向(Y軸方向)上成列。再者，在圖2中，雖然為了方便說明而將從該分歧部87a至鏡子89的距離記載得較短，但實際上是將從該分歧部87a至工作夾台71之上表面的距離作為基準來設定鏡子89的位置。 The light guided to the second path 8e through the light branching unit 86 is guided to the measuring terminal 87 which faces the wafer 10 held on the work chuck 71. The measurement terminal 87 is formed in a shape that is relatively long and narrow in the Y-axis direction, and is formed in a size that covers the diameter of the wafer 10 that is the measurement target. In addition, the measurement terminal 87 is composed of a branching portion 87a and a condensing portion 87b, and the branching portion 87a is formed by dividing the end portions of the other ends of the plurality of optical fibers (1) to (18) that constitute the optical transmission module. 2 paths. A plurality of mirrors 89 and a plurality of objective lenses 88 are provided on the condensing portion 87b, and the mirrors 89 will generate the optical fiber according to each end of one of the paths branched by the branching portion 87a (1) ~(18) Retrograde first return light, the objective lenses 88 will be guided to the light at each end of the other path branched by the branching part 87a, and guided to the light held on the work chuck 71, and the objective lens 88 and the mirror 89 are arranged in a row in a direction (Y-axis direction) orthogonal to the direction in which the work chuck 71 moves (X-axis direction). In addition, in FIG. 2, although the distance from the branching part 87a to the mirror 89 is described as being short for the convenience of description, in fact, the distance from the branching part 87a to the upper surface of the work chuck 71 is taken as The position of the mirror 89 is set based on the reference.

該第3路徑8f是將於第2路徑8e逆行而去之光，藉由在光分歧組件86中分歧而傳輸之光纖(1)~(18)所 形成，且在其端部配設有作為檢測光之強度的組件之線型影像感測器(line image sensor)90。線型影像感測器90是以可在構成第3路徑8f之光纖(1)~(18)的對應於各端部之位置上檢測從各光纖(1)~(18)所照射出的光之光強度的方式構成，且將所測量到的光強度傳送至構成該測量裝置8的控制裝置20，並與所檢測到的時間(t)一起儲存於該控制裝置20的儲存部。 The third path 8f is the light that will go retrograde on the second path 8e, and is transmitted by the optical fibers (1) to (18) by branching in the optical branching component 86. A line image sensor 90 as a component for detecting the intensity of light is arranged at its end. The linear image sensor 90 can detect the light emitted from each optical fiber (1) to (18) at the position corresponding to each end of the optical fiber (1) to (18) constituting the third path 8f. The measured light intensity is transmitted to the control device 20 constituting the measuring device 8 and stored in the storage section of the control device 20 together with the detected time (t).

該控制組件20是由電腦構成，並且具備有依照控制程式進行運算處理的中央運算處理裝置(CPU)、保存控制程式等的唯讀記憶體(ROM)、用於暫時保存檢測出的檢測值、運算結果等的可讀寫之隨機存取記憶體(RAM)、輸入介面、及輸出介面(省略了關於細節之圖示)。本實施形態中的控制組件20是控制磨削裝置1之各驅動部分並且構成該測量裝置8的組件，且如上述，可構成為具有下述功能：藉由儲存線型影像感測器90之檢測值，並驅動多面鏡83、發光組件81，來計算晶圓10之厚度、高度。本實施形態的磨削裝置1、測量裝置8是大致如以上地構成，以下說明其作用。 The control unit 20 is composed of a computer, and is equipped with a central processing unit (CPU) that performs arithmetic processing in accordance with a control program, a read-only memory (ROM) that stores control programs, etc., and is used to temporarily store detected detection values, Read and write random access memory (RAM), input interface, and output interface for calculation results, etc. (illustrations for details are omitted). The control unit 20 in this embodiment is a unit that controls the driving parts of the grinding device 1 and constitutes the measuring device 8. As described above, it can be configured to have the following function: by storing the detection of the linear image sensor 90 And drive the polygon mirror 83 and the light-emitting element 81 to calculate the thickness and height of the wafer 10. The grinding device 1 and the measuring device 8 of the present embodiment are configured as described above, and their functions will be described below.

以本發明的測量裝置8進行之晶圓10的厚度、高度的測量，是藉由例如以磨削裝置1磨削已載置在工作夾台71的晶圓10之後，使其從磨削區70b移動至被加工物載置區70a，而使其通過測定端子87的正下方來進行。此時，控制組件20是從線型影像感測器90之表示光強度的檢測訊號中求出如圖5所示之分光干涉波形、且依據 該分光干涉波形來實行波形解析，而可從在測定端子87所具備之鏡子89反射而逆行的第1返回光所前進的光路長度、與在被載置於工作夾台71上之晶圓10的上表面及下表面反射而逆行的第2返回光所前進的光路長度之差中，計算出晶圓10之上表面的高度、下表面的高度、及晶圓10的厚度(T)。關於具體的計算方法，容後敘述。 The measurement of the thickness and height of the wafer 10 by the measuring device 8 of the present invention is performed by, for example, grinding the wafer 10 placed on the work chuck 71 with the grinding device 1 and then moving it from the grinding area 70b is moved to the to-be-processed object placement area 70a, and it passes directly below the measurement terminal 87, and is performed. At this time, the control unit 20 obtains the spectral interference waveform shown in FIG. 5 from the detection signal of the linear image sensor 90 indicating the light intensity, and is based on This spectral interference waveform is used to perform waveform analysis, and the optical path length of the first return light that can be reflected from the mirror 89 provided in the measurement terminal 87 and travels retrograde, and the wafer 10 placed on the work chuck 71 The height of the upper surface of the wafer 10, the height of the lower surface, and the thickness (T) of the wafer 10 are calculated from the difference in the optical path length of the second returning light reflected from the upper surface and the lower surface of the wafer. The specific calculation method will be described later.

參照著圖2~4來說明本實施形態中的計算晶圓10的厚度、及高度的順序。多面鏡83是如上述、將成正8角形之各邊以反射面(鏡子)來構成，且藉由圖未示的脈衝馬達等的驅動組件，將其旋轉位置與時間(t)建立關連並儲存到控制組件20之隨機存取記憶體(RAM)中，並且在圖中朝順時針方向進行旋轉驅動。 The procedure for calculating the thickness and height of the wafer 10 in this embodiment will be described with reference to FIGS. 2 to 4. The polygon mirror 83 is formed by reflecting surfaces (mirrors) on each side of a regular octagon as described above, and is related to the rotation position and time (t) and stored by driving components such as pulse motors not shown in the figure. To the random access memory (RAM) of the control unit 20, and rotate clockwise in the figure.

從發光源81照射光，且將多面鏡83朝圖中箭頭的方向旋轉時，會使藉由分光器82所分光而具有展寬之光8b的一部分在多面鏡83的反射面83a上反射而形成反射光8c，並且開始入射到聚光透鏡84。並且，當多面鏡83之反射面83a成為圖3(a)所示之狀態時，是使構成在聚光透鏡84聚光之光8c的一部分之1000nm波長的範圍入射到將一端部保持在保持構件85上的光纖(1)(時間t1)。入射到光纖(1)之1000nm波長之光，會於構成於上述之光傳輸組件的第1、第2路徑8d、8e行進，而到達測定端子87。到達該測定端子87的1000nm波長的光，是在分歧部87a分歧，且其中一側的光在鏡子89反射而成為第1返回光，並於第2路徑8e逆行而在所到達的光分歧組件86上分歧至構成第3路徑 8f之光纖(1)。然後，該已分歧之光會到達已分配到線型影像感測器90中的光纖(1)的位置。又，同時在分歧部87a中分歧至接物透鏡88側之另一側的光，是使其於該測定端子87的正下方朝X方向方向移動的晶圓10之上表面及下表面反射，而形成於第2路徑8e逆行的第2返回光，並到達在光分歧組件86分歧且在線型影像感測器90中的分配於光纖(1)的位置。其結果為，可檢測對光纖(1)有光入射的時間t1中的以第1、第2返回光所構成的反射光的光強度。此光強度是與時間t1、及被照射之晶圓10的X軸方向的X座標、Y軸方向的Y座標的位置建立關連並儲存於控制組件20之隨機存取記憶體(RAM)的任意的儲存區域中。 When light is irradiated from the light-emitting source 81 and the polygon mirror 83 is rotated in the direction of the arrow in the figure, a part of the light 8b that is spread by the beam splitter 82 will be reflected on the reflecting surface 83a of the polygon mirror 83. The light 8c is reflected and starts to enter the condenser lens 84. And, when the reflecting surface 83a of the polygon mirror 83 is in the state shown in Fig. 3(a), a part of the light 8c condensed by the condenser lens 84 is made to enter the 1000nm wavelength range, and one end is held in the hold Optical fiber (1) on member 85 (time t1). Light with a wavelength of 1000 nm incident on the optical fiber (1) travels through the first and second paths 8d, 8e formed in the above-mentioned optical transmission module, and reaches the measuring terminal 87. The light with a wavelength of 1000 nm reaching the measuring terminal 87 is branched at the branch part 87a, and the light on one side is reflected by the mirror 89 to become the first return light, and travels backward on the second path 8e to reach the light branching component. 86 branch to form the third path 8f fiber (1). Then, the divided light reaches the position of the optical fiber (1) that has been allocated to the linear image sensor 90. At the same time, the light that is branched to the other side of the objective lens 88 in the branching portion 87a is reflected on the upper surface and the lower surface of the wafer 10 moving in the X direction directly below the measurement terminal 87. The second return light formed in the second path 8e travels backwards and reaches the position of the optical fiber (1) branched in the optical branching unit 86 and allocated to the optical fiber (1) in the line image sensor 90. As a result, it is possible to detect the light intensity of the reflected light composed of the first and second returning lights in the time t1 when light is incident on the optical fiber (1). This light intensity is associated with the time t1 and the position of the X coordinate in the X axis direction and the Y coordinate in the Y axis direction of the illuminated wafer 10 and stored in the random access memory (RAM) of the control unit 20. In the storage area.

再者，圖4所顯示的是，於橫軸表示時間(t)、於縱軸表示光纖(1)~(18)之端部的配設位置，且是否隨著時間(t)的經過，而使在多面鏡83反射之1000nm~1100nm波長之光之任意的波長範圍入射到任意之光纖(1)~(18)的圖，並可理理到例如下述情形：在時間t1，1000nm波長的光開始入射到光纖(1)。藉由將在此圖4所示之時間(t)、及表示是否使任意的波長範圍入射到任意之光纖(1)~(18)之關係儲存於控制組件20，可以使以線型影像感測器90檢測之光強度，對是否為任意的波長範圍入射到任意之光纖(1)~(18)時所檢測出之光強度建立關連。 Furthermore, Figure 4 shows that the horizontal axis represents time (t), and the vertical axis represents the arrangement positions of the ends of the optical fibers (1) to (18), and whether the time (t) elapses, And make the arbitrary wavelength range of 1000nm~1100nm wavelength reflected by the polygon mirror 83 incident on any optical fiber (1)~(18), and it can be rationalized for example as follows: at time t1, 1000nm wavelength The light starts to enter the optical fiber (1). By storing the relationship between the time (t) shown in Figure 4 and whether any wavelength range is incident on any optical fiber (1) ~ (18) in the control unit 20, linear image sensing can be used The light intensity detected by the device 90 establishes a correlation with the light intensity detected when it is incident on any optical fiber (1)~(18) in any wavelength range.

回到圖3繼續說明，藉由於時間t1藉由分光器82所分光之光在入射到光纖(1)之後，使多面鏡83繼續旋轉，以使多面鏡83的反射面83a相對於光8b的方向變 化，而使被分光之光8b的1000nm~1100nm波長之範圍朝圖中下方移動，並且依序朝保持光纖(1)~(18)的保持組件85進行照射。然後，於時間t2中，如圖3(b)所示，成為將藉由分光器82所分光之光的範圍相對於光纖(1)~(18)全部入射的狀態(也一併參照圖4)。在此狀態中，會使1100nm波長之光入射到光纖(1)，且將1000nm波長之光入射到光纖(18)。也就是說，成為相對於光纖(1)，從時間t1至t2可將藉由分光器82所分光之1000nm~1100nm波長範圍的全部入射的情形。 Returning to Figure 3 to continue the description, after the light split by the beam splitter 82 at time t1 is incident on the optical fiber (1), the polygon mirror 83 continues to rotate, so that the reflection surface 83a of the polygon mirror 83 is relative to the light 8b. Change of direction Therefore, the wavelength range of 1000 nm to 1100 nm of the light 8b to be split is moved downward in the figure, and is sequentially irradiated to the holding member 85 holding the optical fibers (1) to (18). Then, at time t2, as shown in FIG. 3(b), the range of the light split by the beam splitter 82 is incident on all the optical fibers (1) to (18) (also refer to FIG. 4). ). In this state, light with a wavelength of 1100 nm is incident on the optical fiber (1), and light with a wavelength of 1000 nm is incident on the optical fiber (18). In other words, with respect to the optical fiber (1), from time t1 to t2, all of the wavelength range of 1000 nm to 1100 nm divided by the beam splitter 82 can be incident.

從圖3(b)所示之狀態中可知，當進一步旋轉多面鏡83而到達時間t3時，會成為如圖3(c)所示，藉由分光器82所分光之光的波長範圍之中，1100nm波長之範圍入射至光纖(18)之狀態，且在時間t1~t3中，可將藉由分光器82所分光之1000nm~1100nm波長之光照射至光纖(1)~(18)的全部。再者，如從圖3、4可理解到的是，當時間進一步經過而成為t4時，可相對於相鄰於多面鏡83的反射面83a之反射面83b照射被分光之光8b而將1000nm波長之光的範圍再次開始照射於光纖(1)，成為與圖3(a)相同之狀態，且之後重複同樣的作動。 From the state shown in Fig. 3(b), it can be seen that when the polygon mirror 83 is further rotated to reach the time t3, it will become as shown in Fig. 3(c), in the wavelength range of the light split by the beam splitter 82 , The range of 1100nm wavelength is incident on the optical fiber (18), and during the time t1~t3, the light of 1000nm~1100nm wavelength split by the beam splitter 82 can be irradiated to all of the optical fiber (1)~(18) . Furthermore, as can be understood from FIGS. 3 and 4, when the time further elapses and becomes t4, the split light 8b can be irradiated to the reflecting surface 83b adjacent to the reflecting surface 83a of the polygon mirror 83 to reduce 1000 nm The range of wavelength light starts to irradiate the optical fiber (1) again, and becomes the same state as in Fig. 3(a), and the same operation is repeated thereafter.

如上述，在控制組件20中儲存有對時間(t)建立關連而將藉由線型影像感測器90所檢測之光強度、與如圖4所示之對於該時間(t)中的各光纖(1)~(18)藉由多面鏡83所分配的波長，且可以藉由參照兩者，而按各光纖(1)~(18)生成如圖5所示的分光干涉波形。圖5所顯示的 是，例如關於光纖(1)所檢測之分光干涉波形(F(1))，且橫軸是表示入射到光纖的反射光波長(λ)，縱軸是表示藉由線型感測器90所檢測的光強度。 As mentioned above, the control unit 20 stores the relationship between the time (t) and the light intensity detected by the linear image sensor 90, as shown in FIG. 4 for each optical fiber in the time (t). (1)~(18) By referring to the wavelengths assigned by the polygon mirror 83, and by referring to both, the optical fibers (1)~(18) can generate the spectral interference waveform as shown in FIG. 5. Figure 5 shows Yes, for example, regarding the spectral interference waveform (F(1)) detected by the optical fiber (1), and the horizontal axis represents the wavelength (λ) of the reflected light incident on the optical fiber, and the vertical axis represents the detection by the line sensor 90 The light intensity.

以下，根據控制組件20以上述之分光干涉波形為依據而實行的波形解析，來說明關於計算晶圓10的厚度及高度的例子。 Hereinafter, an example of calculating the thickness and height of the wafer 10 will be described based on the waveform analysis performed by the control unit 20 based on the above-mentioned spectral interference waveform.

將從第2路徑8e中的測定端子87的分歧部87a至鏡子89的光路長度設為(L1)，將從該測定端子87的分歧部87a至被保持在工作夾台71的晶圓10的上表面的光路長度設為(L2)，將從該測定端子87的分歧部87a至被保持在工作夾台71的晶圓10的下表面的光路長度設為(L3)，並且將光路長度(L1)與光路長度(L2)之差值設為第1光路長度差(d1=L1-L2)、將光路長度(L1)與光路長度(L3)之差值設為第2光路長度差(d2=L1-L3)、將光路長度(L3)與光路長度(L2)之差值設為第3光路長度差(d3=L3-L2)。再者，如上述，該光路長度(L1)本身為不會變化的光路長度，並且設想從測定端子87的分歧部87a至工作夾台71的上表面的距離來設定。 The optical path length from the branch 87a of the measurement terminal 87 in the second path 8e to the mirror 89 is set to (L1), and the distance from the branch 87a of the measurement terminal 87 to the wafer 10 held on the work chuck 71 The optical path length on the upper surface is set to (L2), the optical path length from the branch 87a of the measuring terminal 87 to the lower surface of the wafer 10 held on the work chuck 71 is set to (L3), and the optical path length is set to (L3). The difference between L1) and the optical path length (L2) is set to the first optical path length difference (d1=L1-L2), and the difference between the optical path length (L1) and the optical path length (L3) is set to the second optical path length difference (d2) =L1-L3). Set the difference between the optical path length (L3) and the optical path length (L2) as the third optical path length difference (d3=L3-L2). In addition, as described above, the optical path length (L1) itself is an optical path length that does not change, and is set assuming the distance from the branch 87a of the measuring terminal 87 to the upper surface of the work clamp 71.

接著，控制組件20會依據如上述之圖5所示之對每條光纖(1)~(18)所生成之分光干涉波形來實行波形解析。此波形解析雖然可以依據例如傅立葉(Fourier)轉換理論及小波(Wavelet)轉換理論來實行，但在以下所述之實施形態中是針對使用如下述數學式1、數學式2、數學式3所示之傅立葉轉換公式的例子來說明。 Next, the control component 20 will perform waveform analysis based on the spectroscopic interference waveform generated for each optical fiber (1) to (18) as shown in FIG. 5 above. Although this waveform analysis can be carried out based on, for example, Fourier transformation theory and wavelet transformation theory, in the following embodiments, it is used as shown in the following mathematical expression 1, mathematical expression 2, and mathematical expression 3. An example of the Fourier transform formula to illustrate.

Figure 106121252-A0305-02-0018-1
Figure 106121252-A0305-02-0018-1

Figure 106121252-A0305-02-0018-2
Figure 106121252-A0305-02-0018-2

Figure 106121252-A0305-02-0018-3
Figure 106121252-A0305-02-0018-3

上述數學式中，λ為波長，d為上述第1光路長度差(d1=L1-L2)、第2光路長度差(d2=L1-L3)、及第3光路長度差(d3=L3-L2)，W(λ n)為窗函數。上述數學式1是在cos的理論波形與上述分光干涉波形(I(λ n))的比較中，求出波的周期最相近(相關性高)之光路長度差(d)、亦即求出分光干涉波形與理論上之波形函數的相關係數較高之光路長度差(d)。又，上述數學式2是在sin的理論波形與上述分光干涉波形(I(λ n))的比較中，求出波的周期最相近(相關性高)之第1光路長度差(d1=L1-L2)、第2光路長度差(d2=L1-L3)、及第3光路長度差(d3=L3-L2)、亦即求出分光干涉波形與理論上的波形函數的相關係數為第1光路長度差(d1=L1-L2)、第2光路長度差(d2=L1-L3)、及第3光路長度差(d3=L3-L2)。並且，上述數學式3是求出數學式1的結果與數學式2的結果之平均值。 In the above formula, λ is the wavelength, and d is the first optical path length difference (d1=L1-L2), the second optical path length difference (d2=L1-L3), and the third optical path length difference (d3=L3-L2) ), W(λ n) is the window function. The above formula 1 is to obtain the optical path length difference (d) with the closest wave period (high correlation) in the comparison between the theoretical waveform of cos and the above-mentioned spectral interference waveform (I(λ n)), that is, to obtain The optical path length difference (d) for the higher correlation coefficient between the spectroscopic interference waveform and the theoretical waveform function. In addition, the above formula 2 is to find the first optical path length difference (d1=L1) with the closest wave period (high correlation) in the comparison between the theoretical waveform of sin and the above-mentioned spectral interference waveform (I(λ n)) -L2), the second optical path length difference (d2=L1-L3), and the third optical path length difference (d3=L3-L2), that is, the correlation coefficient between the spectral interference waveform and the theoretical waveform function is calculated as the first The optical path length difference (d1=L1-L2), the second optical path length difference (d2=L1-L3), and the third optical path length difference (d3=L3-L2). In addition, the above-mentioned formula 3 is the average value of the result of formula 1 and the result of formula 2 obtained.

控制組件20是藉由實行依據上述數學式1、數學式2、數學式3之運算，而能夠依據起因於包含在反射光之返回光的各光路長度差之分光的干涉，得到圖6所示之訊號強度的波形。在圖6中，橫軸是表示光路長度差(d)，縱軸是表示訊號強度。如圖6所示之例子中，會在光路長度差(d)為450μm的位置、300μm的位置、150μm的位置上使訊號強度顯示得較高。亦即，光路長度差(d)為450μm的位置之訊號強度(a)是第1光路長度差(d1=L1-L2)的位置，且所顯示的是晶圓11的上表面的高度(h)。又，光路長度差(d)為300μm的位置之訊號強度(b)是第2光路長度差(d2=L1-L3)的位置，並所顯示的是晶圓11的下表面的高度(h)。此外，光路長度差(d)為150μm的位置之訊號強度(c)是第3光路長度差(d3=L3-L2)的位置，且所顯示的是晶圓10的厚度(T)。並且，將在該測定端子87與該工作夾台71之相對的X軸方向之位置、及定位於Y軸方向之接物透鏡88的位置所特定之測量位置的座標(X座標、Y座標)中的晶圓10的高度(h)、厚度(T)予以儲存。一邊使晶圓10在X軸方向上移動一邊對整體實行像這樣的測量。 The control component 20 performs operations based on the above mathematical formula 1, mathematical formula 2, and mathematical formula 3, and can obtain the result shown in FIG. 6 based on the interference of the split light caused by the difference in the optical path length of the returned light included in the reflected light The waveform of the signal strength. In FIG. 6, the horizontal axis represents the optical path length difference (d), and the vertical axis represents the signal intensity. In the example shown in FIG. 6, the signal intensity is displayed at a position where the optical path length difference (d) is 450 μm, a position of 300 μm, and a position of 150 μm. That is, the signal intensity (a) at the position where the optical path length difference (d) is 450 μm is the position of the first optical path length difference (d1=L1-L2), and what is displayed is the height of the upper surface of the wafer 11 (h ). In addition, the signal intensity (b) at the position where the optical path length difference (d) is 300 μm is the position of the second optical path length difference (d2=L1-L3), and what is displayed is the height of the lower surface of the wafer 11 (h) . In addition, the signal intensity (c) at the position where the optical path length difference (d) is 150 μm is the position of the third optical path length difference (d3=L3-L2), and the thickness (T) of the wafer 10 is displayed. In addition, the coordinates (X coordinate, Y coordinate) of the measurement position specified by the position in the X-axis direction relative to the measurement terminal 87 and the work clamp table 71 and the position of the objective lens 88 positioned in the Y-axis direction The height (h) and thickness (T) of the wafer 10 in the middle are stored. While moving the wafer 10 in the X-axis direction, such measurement is performed on the whole.

如以上所述，由於根據圖示之實施形態中的測量裝置8，能夠求出晶圓10之厚度及高度，且是依據起因於進行反射之反射光的光路長度差所得到之分光干涉波形來檢測晶圓10在加工時的晶圓10之上表面、下表面的高度(h)、厚度(T)，所以可以在不受貼附於晶圓10之正面的保護膠帶12的厚度的變化影響的情形下，正確地測量晶圓 11的厚度(T)、高度。 As described above, the thickness and height of the wafer 10 can be obtained by the measuring device 8 in the illustrated embodiment, and it is based on the spectral interference waveform obtained from the difference in the optical path length of the reflected light caused by the reflection. Detect the height (h) and thickness (T) of the upper surface and lower surface of the wafer 10 during processing of the wafer 10, so that it is not affected by the change in the thickness of the protective tape 12 attached to the front surface of the wafer 10 Circumstance, correctly measure the wafer 11 thickness (T), height.

測量裝置8是如以上地構成，以下，說明關於使用具備有該測量裝置8之磨削裝置1將晶圓10磨削成預定之厚度的順序。 The measuring device 8 is configured as described above. Hereinafter, the procedure for grinding the wafer 10 to a predetermined thickness using the grinding device 1 provided with the measuring device 8 will be described.

在正面貼附有保護膠帶12的晶圓10，是藉由將保護膠帶12側載置在已定位於圖1所示之磨削裝置1中的被加工物載置區70a的工作夾台71上，且作動圖未示之吸引組件，而被吸引保持在工作夾台71上。因此，吸引保持於工作夾台71上的晶圓11會成為背面10b在上側。 The wafer 10 with the protective tape 12 attached to the front side is placed on the work chuck table 71 of the workpiece placement area 70a in the grinding apparatus 1 shown in FIG. 1 by placing the protective tape 12 side The suction components, which are not shown in the action diagram, are attracted and held on the work clamp table 71. Therefore, the wafer 11 sucked and held on the work chuck table 71 becomes the back surface 10b on the upper side.

接著，控制組件20會作動已保持有晶圓10的工作夾台71之圖未示的移動組件，並移動工作夾台71以定位至磨削區70b、且將磨削輪5的複數個磨削磨石51的外周緣定位成通過工作夾台71之旋轉中心。 Next, the control assembly 20 will actuate a moving assembly not shown in the work chuck table 71 that has held the wafer 10, and move the work chuck table 71 to be positioned to the grinding area 70b, and grind a plurality of grinding wheels 5 The outer peripheral edge of the grinding stone 51 is positioned to pass through the rotation center of the work chuck 71.

像這樣將磨削輪5與保持在工作夾台71之晶圓10設定成預定的位置關係，且控制組件20會驅動圖未示之旋轉驅動組件而以例如300rpm的旋轉速度來旋轉工作夾台71，並且驅動上述之伺服馬達43而以例如6000rpm的旋轉速度來旋轉磨削輪5。然後，對晶圓10供給磨削水，並且正轉驅動磨削單元進給機構6之脈衝馬達62以使磨削輪5下降(磨削進給)，並以預定之壓力將複數個磨削磨石51推壓於晶圓10之上表面(背面10b)的被磨削面。其結果，可磨削晶圓10之被磨削面(磨削步驟)。 In this way, the grinding wheel 5 and the wafer 10 held on the work chuck table 71 are set to a predetermined positional relationship, and the control assembly 20 will drive the unshown rotary drive assembly to rotate the work chuck table at a rotation speed of, for example, 300 rpm 71, and drive the aforementioned servo motor 43 to rotate the grinding wheel 5 at a rotation speed of, for example, 6000 rpm. Then, grinding water is supplied to the wafer 10, and the pulse motor 62 of the grinding unit feed mechanism 6 is driven forward to lower the grinding wheel 5 (grinding feed), and a plurality of grinding wheels are ground at a predetermined pressure. The grindstone 51 is pressed against the ground surface of the upper surface (rear surface 10b) of the wafer 10. As a result, the ground surface of the wafer 10 can be ground (grinding step).

結束磨削步驟之後，藉由使已保持有已磨削之晶圓10的工作夾台71朝位於X軸方向之前方的被加工物 載置區70a側移動，以將晶圓10定位在測量裝置8之測定端子87的正下方，並且如上述地使測量裝置8作動以得到對應於晶圓10整體之各部位的分光干涉波形並且進行波形解析，來測量晶圓10的厚度、及高度。圖7所示之表所表示的是，在測定端子87通過晶圓10之中心並在沿著Y軸方向的預定之位置上，測量晶圓10的厚度(T)、及上表面之高度(h)的例子。藉由按晶圓10的X軸方向中的每個預定間隔實行這樣的測量，並儲存晶圓10之正面的高度、厚度，且確認磨削後之晶圓10整體的厚度、及高度，可以判定磨削步驟之良窳，並且因應需要而實施再磨削。 After the grinding step is completed, the work chuck 71 holding the ground wafer 10 is turned toward the workpiece located forward in the X-axis direction The placement area 70a side moves to position the wafer 10 directly below the measurement terminal 87 of the measurement device 8, and the measurement device 8 is actuated as described above to obtain the spectral interference waveform corresponding to each part of the entire wafer 10, and Waveform analysis is performed to measure the thickness and height of the wafer 10. The table shown in FIG. 7 shows that the measuring terminal 87 passes through the center of the wafer 10 and measures the thickness (T) of the wafer 10 and the height of the upper surface (T) at a predetermined position along the Y-axis direction ( h) Examples. By performing such measurement at each predetermined interval in the X-axis direction of the wafer 10, and storing the height and thickness of the front surface of the wafer 10, and confirming the thickness and height of the entire wafer 10 after grinding, it is possible to Determine the quality of the grinding steps, and implement re-grinding as needed.

再者，在本實施形態中，雖然採用了多面鏡83作為藉由分光器所分光之各波長的光以經過時間來變更分配方向之分配組件，但是本發明並不限定於此，且可以採用可做到將反射面之方向與經過時間一起控制之例如振鏡掃描器(galvano scanner)。此外，在本實施形態中，雖然作為用於檢測反射光之光強度的受光元件而使用了線型影像感測器90，但並不限定於此，亦可為對應於每條光纖(1)~(18)而配設的光檢測器(photodetector)。 Furthermore, in the present embodiment, although the polygon mirror 83 is used as a distribution component for changing the distribution direction of the light of each wavelength divided by the beam splitter with the elapse of time, the present invention is not limited to this, and can be used It is possible to control the direction of the reflecting surface together with the elapsed time, such as a galvano scanner. In addition, in this embodiment, although the linear image sensor 90 is used as the light receiving element for detecting the light intensity of the reflected light, it is not limited to this, and it may correspond to each optical fiber (1)~ (18) And equipped with a photodetector (photodetector).

又，在上述之實施形態中，雖然以對已結束磨削步驟之晶圓的整體進行由該測量裝置8進行之測量的方式作了說明，但並非限定於此，例如，可以將該測量裝置8之測量殼體80的設置位置設定在圖1所示之磨削區70b的附近，並且將該測量殼體80的設置位置可移動地設置。藉由像這樣地構成，亦可做到在使保持在磨削裝置之工作 夾台上的晶圓接受磨削輪之作用而被磨削之時，與露出之晶圓相向來使測定端子87淹沒在磨削時所供給之磨削水中並定位，以測量磨削中之晶圓的厚度，且可做到藉由將磨削中之晶圓10的厚度反饋至控制組件20來磨削成所期望的厚度。又，依據本發明所構成的測量裝置8，不需要如本實施形態地配設在磨削裝置1中，亦可作為與磨削裝置1獨立之單一的裝置而構成，或是合併設置到與磨削裝置不同的其他加工裝置上。 In addition, in the above-mentioned embodiment, although the measurement performed by the measuring device 8 is performed on the entire wafer after the grinding step has been completed, it is not limited to this. For example, the measuring device may be used. The setting position of the measuring housing 80 of 8 is set in the vicinity of the grinding area 70b shown in FIG. 1, and the setting position of the measuring housing 80 is movably set. By configuring like this, it is also possible to maintain the work in the grinding device When the wafer on the chuck is ground under the action of the grinding wheel, it faces the exposed wafer so that the measuring terminal 87 is submerged in the grinding water supplied during grinding and positioned to measure the grinding The thickness of the wafer can be ground to a desired thickness by feeding back the thickness of the wafer 10 being ground to the control unit 20. In addition, the measuring device 8 constructed according to the present invention does not need to be arranged in the grinding device 1 as in this embodiment, and may be constructed as a single device independent of the grinding device 1, or combined with Grinding equipment is different from other processing equipment.

10:晶圓 10: Wafer

12:保護膠帶 12: Protective tape

20:控制組件 20: Control components

71:工作夾台 71: work clamp

8:測量裝置 8: Measuring device

8a、8b、8c:光 8a, 8b, 8c: light

8d:第1路徑 8d: 1st path

8e:第2路徑 8e: second path

8f:第3路徑 8f: 3rd path

80:測量殼體 80: measuring case

81:發光源 81: luminous source

82:分光器 82: Splitter

83:多面鏡(分配組件) 83: Polygonal mirror (distribution component)

84:聚光透鏡 84: Condenser lens

85:保持構件 85: holding member

86:光分歧組件 86: Optical branch component

87:測定端子 87: Measuring terminal

87a:分歧部 87a: Division

87b:聚光部 87b: Condenser

88:接物透鏡 88: contact lens

89:鏡子 89: Mirror

90:線型影像感測器 90: Linear image sensor

F(1)~F(18):分光干涉波形 F(1)~F(18): Spectral interference waveform

Claims (2)

一種測量裝置，可測量板狀物的厚度或高度，該測量裝置至少由下述所構成：寬頻光源，發出對板狀物具有穿透性之波長區的光；分光器，將該寬頻光源所發出之光在波長區進行分光；分配組件，將藉由該分光器所分光的各波長的光以經過時間來變更分配方向；聚光透鏡，將藉由該分配組件所分配之各波長的光聚光；光傳輸組件，與該聚光透鏡相向，且將複數條光纖的一端的端面成列配設，以傳輸藉由該聚光透鏡所聚光之各波長的光；測定端子，將構成該光傳輸組件之複數條光纖的另一端之端面分歧成2條路徑，並具備有鏡子與複數個接物透鏡，該鏡子是配設在複數個第1端面並生成於該光纖逆行的第1返回光，該等接物透鏡是相向於該板狀物而成列且對應於複數個第2端面而配設；光分歧組件，配設於光傳輸組件之光的傳輸路徑上，並將在該板狀物之上表面反射之光與穿透板狀物而在下表面反射之光於各光纖逆行的第2返回光、及該第1返回光，從各光纖進行分歧；光強度檢測組件，將在該光分歧組件所分歧之對應於 各光纖的該第1返回光和該第2返回光之波長根據藉由該分配組件對各光纖分配之時間，檢測各波長之光的強度；及控制組件，從藉由該光強度檢測組件而被檢測出的光強度，對應於各光纖生成分光干涉波形，並對對應於各光纖的分光干涉波形進行波形解析，以計算對應於各光纖之板狀物的厚度或高度。 A measuring device that can measure the thickness or height of a plate. The measuring device is composed of at least the following: a broadband light source that emits light in a wavelength region that is transparent to the plate; a beam splitter that places the broadband light source The emitted light is split in the wavelength region; the distribution component will change the distribution direction of the light of each wavelength divided by the splitter with the elapsed time; the condenser lens will distribute the light of each wavelength by the distribution component Condensing light; optical transmission components, facing the condensing lens, and arranging the end faces of one end of a plurality of optical fibers in a row to transmit the light of each wavelength condensed by the condensing lens; the measuring terminal will constitute The end face of the other end of the plurality of optical fibers of the optical transmission component diverges into two paths, and is equipped with a mirror and a plurality of objective lenses. The mirror is arranged on the plurality of first end faces and generated on the first end of the optical fiber retrograde. For returning light, the objective lenses are arranged in rows facing the plate and corresponding to the plurality of second end faces; the optical branching component is arranged on the light transmission path of the optical transmission component, and will be placed on the light transmission path of the optical transmission component. The light reflected from the upper surface of the plate and the light reflected on the lower surface of the plate are separated from each optical fiber by the second returning light and the first returning light that penetrate the plate and reflected on the lower surface. The light intensity detection component, Will correspond to the branch of the optical branch component The wavelengths of the first return light and the second return light of each optical fiber detect the intensity of the light of each wavelength according to the time allocated to each optical fiber by the distribution component; The detected light intensity generates a spectral interference waveform corresponding to each optical fiber, and performs waveform analysis on the spectral interference waveform corresponding to each optical fiber to calculate the thickness or height of the plate corresponding to each optical fiber. 如請求項1的測量裝置，其具備保持該板狀物的保持組件，並將該測定端子和該保持組件構成為可在X軸方向上相對地移動，且將構成該測定端子之對應於各光纖的端面而配設的接物透鏡之列定位在與X軸方向正交的Y軸方向上，並且具備記錄組件，該記錄組件是在以該測定端子與該保持組件之相對的X軸方向之移動、與定位於Y軸方向之接物透鏡所特定之X座標、Y座標中，儲存以該控制組件所計算出的板狀物的厚度或高度。 For example, the measuring device of claim 1, which is provided with a holding member for holding the plate, and the measurement terminal and the holding member are configured to be relatively movable in the X-axis direction, and corresponding to each of the measurement terminals constituting the measurement terminal The column of the objective lens arranged on the end face of the optical fiber is positioned in the Y-axis direction orthogonal to the X-axis direction, and is equipped with a recording unit in the X-axis direction opposite to the measuring terminal and the holding unit The movement and the specified X coordinate and Y coordinate of the objective lens positioned in the Y-axis direction are stored in the thickness or height of the plate calculated by the control component.
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