TWI730472B - Full color led display panel using isolation lines of laser scribing and manufacturing method thereof - Google Patents

Full color led display panel using isolation lines of laser scribing and manufacturing method thereof Download PDF

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TWI730472B
TWI730472B TW108138613A TW108138613A TWI730472B TW I730472 B TWI730472 B TW I730472B TW 108138613 A TW108138613 A TW 108138613A TW 108138613 A TW108138613 A TW 108138613A TW I730472 B TWI730472 B TW I730472B
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layer
elongated
semiconductor material
light
led display
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TW202118117A (en
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詹世豪
曾少澤
黃耀賢
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進化光學有限公司
黃耀賢
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The present invention discloses a LED display panel using isolation lines of laser scribing, wherein M numbers of long shaped light-emitting (LSLE) structures are formed on a first surface of a double side polished transparent substrate (DSPTS). Particularly, any two of the LSLE structures are isolated by a laser scribing line, and the LSLE structure comprises a long shaped buffer layer, a long shaped first semiconductor layer, a long shaped active layer, and a long shaped second semiconductor layer. Moreover, an insulation layer is formed on the first surface so as to cover the LSLE structures. There are N numbers of first conductive layers formed on each of the long shaped first semiconductor layers, such that M×N numbers of the first conductive layers are therefore provided in the insulation layer. On the other hand, the insulation layer has M×N numbers of openings for allowing N numbers of second conductive layers to be formed on each of the long shaped second semiconductor layers. By such arrangement, the LED display panel is facilitated to achieve an electrically connection with an external display driver chip.

Description

使用雷射切割道絕緣之全彩LED顯示面板及其製造方法 Full-color LED display panel insulated by laser cutting channel and manufacturing method thereof

本發明係關於自發光(Self-luminous)顯示面板之技術領域，尤指一種使用雷射切割道絕緣之全彩LED顯示面板及其製造方法。 The present invention relates to the technical field of self-luminous display panels, in particular to a full-color LED display panel insulated by laser cutting channels and a manufacturing method thereof.

已知，現有的平面顯示器的種類包括液晶顯示器(LCD)、有機發光二極體(Organic light-emitting diode,OLED)顯示器，以及發光二極體(LED)顯示器。熟悉顯示面板設計與製作的工程師必然知道，液晶顯示器具有非自發光、低效率、低動態範圍、需要偏振濾光等缺點。OLED顯示器雖然屬於自發光型顯示器，然而，藍光OLED元件的低可靠性和低效率(~5%QE)成為OLED顯示器的最主要缺陷。 It is known that the types of existing flat panel displays include liquid crystal displays (LCD), organic light-emitting diode (OLED) displays, and light-emitting diode (LED) displays. Engineers who are familiar with the design and manufacture of display panels must know that liquid crystal displays have the disadvantages of non-self-luminous, low efficiency, low dynamic range, and the need for polarization filtering. Although OLED displays are self-luminous displays, the low reliability and low efficiency (~5%QE) of blue OLED components have become the main drawbacks of OLED displays.

相反的，紅光、綠光、和藍光LED元件的製作技術都非常成熟，使得LED顯示器具有自發光、高效率、高動態範圍、高反應速度、以及超過50,000小時的使用壽命等優勢。因此，就中、小型的顯示器領域而言，LED顯示器已經逐漸取代傳統的液晶顯示器而成為中、小型顯示器 之主流。近年來，LED顯示器技術越趨成熟，已經廣泛地應用於智慧型手機(smart phone)、電視、電腦螢幕、和智慧型手錶等產品之中，因此業界更致力於發展次毫米發光二極體(Mini LED)顯示器以及微型發光二極體(Micro LED)顯示器，以使LED顯示器具有更高的解析度。 On the contrary, the production technology of red, green, and blue LED components is very mature, making LED displays have the advantages of self-luminescence, high efficiency, high dynamic range, high response speed, and a service life of more than 50,000 hours. Therefore, in the field of medium and small displays, LED displays have gradually replaced traditional liquid crystal displays and become medium and small displays. The mainstream. In recent years, LED display technology has become more mature and has been widely used in products such as smart phones, TVs, computer screens, and smart watches. Therefore, the industry is more committed to the development of sub-millimeter light-emitting diodes ( Mini LED) display and micro light emitting diode (Micro LED) display, so that the LED display has a higher resolution.

值得說明的是，如台灣專利號I633645的圖7所示，為了使得一LED顯示面板的各個LED元件之一陽極端和一陰極端都可以順利地電連接至外部的驅動電路，包含複數條陽極端連接電極和複數條陰極端連接電極的一透明導電基板係被設置於該外部驅動電路與各個LED元件之陽極端和陰極端之間，作為所述外部驅動電路與各個LED元件之間的電連接橋梁。 It is worth noting that, as shown in Figure 7 of Taiwan Patent No. I633645, in order to enable one anode terminal and one cathode terminal of each LED element of an LED display panel to be smoothly electrically connected to an external driving circuit, a plurality of anode terminals are included. A transparent conductive substrate connecting electrodes and a plurality of cathode terminal connecting electrodes is arranged between the external driving circuit and the anode and cathode terminals of each LED element, as an electrical connection between the external driving circuit and each LED element bridge.

通常，所述透明導電基板之該些陽極端連接電極和該些陰極端連接電極係由氧化銦錫(Indium Tin Oxide,ITO)或氧化鋅(Zinc oxide,ZnO)製成。必須考慮的是，這些材料的阻值高於銅、銀等常用的金屬電極。熟悉顯示器驅動晶片設計與製作的電子工程師應可理解，阻值相對較高的該些陽極端連接電極和該些陰極端連接電極必然會衍生不可預期的負載效應，導致顯示器驅動晶片無法完美地區動LED顯示面板的各個子畫素(亦即，LED元件)，因而降低使用者體驗(User experience,UX)。 Generally, the anode terminal connecting electrodes and the cathode terminal connecting electrodes of the transparent conductive substrate are made of indium tin oxide (ITO) or zinc oxide (ZnO). It must be considered that the resistance of these materials is higher than that of commonly used metal electrodes such as copper and silver. Electronic engineers who are familiar with the design and manufacture of display driver chips should understand that the relatively high resistance of the anode terminal connection electrodes and the cathode terminal connection electrodes will inevitably generate unexpected load effects, resulting in the display driver chip not being able to move perfectly. Each sub-pixel (ie, LED element) of the LED display panel reduces the user experience (UX).

由上述說明可知，如何使具有M×N個LED發光結構的一LED顯示面板能夠輕易地與一顯示驅動晶片相互整合，實為業界亟欲解決的課題。有鑑於此，本案之發明人 係極力加以研究創作發明，而終於研發完成本發明之一種使用雷射切割道絕緣之全彩LED顯示面板及其製造方法。 From the above description, it can be seen that how to make an LED display panel with M×N LED light emitting structures easily integrate with a display driver chip is a problem that the industry urgently wants to solve. In view of this, the inventor of this case I tried my best to research, create and invent, and finally developed a full-color LED display panel using laser cutting channel insulation and its manufacturing method according to the present invention.

本發明之主要目的在於提供一種使用雷射切割道絕緣之全彩LED顯示面板，其中，M個長條狀發光結構形成於一雙面拋光透光基板的一第一表面之上。特別地，相鄰兩個長條狀發光結構之間係由一雷射切割道所隔離，且各所述長條狀發光結構包含一長條狀緩衝層、一長條狀第一半導體材料層、一長條狀主動層、以及一長條狀第二半導體材料層。並且，一絕緣層形成於該第一表面之上並覆蓋所述長條狀發光結構。該絕緣層內更製作有M×N個第一導電層，使得各所述長條狀第一半導體材料層之上設有N個第一導電層。進一步地，藉由在該絕緣層之上開設M×N個開口，各所述長條狀第二半導體材料層之上可被設有N個第二導電層。如此設計，有利於此全彩LED顯示面板與一外部顯示驅動晶片進行電性連接。 The main purpose of the present invention is to provide a full-color LED display panel insulated by laser cutting channels, in which M elongated light-emitting structures are formed on a first surface of a double-sided polished light-transmitting substrate. In particular, two adjacent elongated light-emitting structures are separated by a laser cutting channel, and each of the elongated light-emitting structures includes a elongated buffer layer and a elongated first semiconductor material layer , A long strip of active layer, and a long strip of second semiconductor material layer. In addition, an insulating layer is formed on the first surface and covers the elongated light-emitting structure. M×N first conductive layers are further fabricated in the insulating layer, so that N first conductive layers are provided on each of the elongated first semiconductor material layers. Further, by opening M×N openings on the insulating layer, N second conductive layers can be provided on each of the elongated second semiconductor material layers. Such a design facilitates the electrical connection between the full-color LED display panel and an external display driver chip.

為了達成上述本發明之目的，本發明係提供所述使用雷射切割道絕緣之全彩LED顯示面板之一實施例，其包括： In order to achieve the above-mentioned object of the present invention, the present invention provides an embodiment of the full-color LED display panel insulated by laser cutting channels, which includes:

一雙面拋光透光基板，具一第一表面與一第二表面； A double-sided polished light-transmitting substrate with a first surface and a second surface;

一緩衝層，形成於該第一表面之上； A buffer layer formed on the first surface;

一第一半導體材料層，形成於該緩衝層之上；其中，利用雷射切割技術對該第一半導體材料層和該緩衝層進行切割，以於該雙面拋光透光基板的該第一表面之上製作出複數條切割道，進而利用該複數條切割道將該緩衝層分割成M個長條狀緩衝層，同時將該第一半導體材料層分割成M個長條狀第一半導體材料層； A first semiconductor material layer is formed on the buffer layer; wherein, the first semiconductor material layer and the buffer layer are cut using laser cutting technology to polish the first surface of the transparent substrate on both sides A plurality of dicing lanes are fabricated on top, and then the plurality of dicing lanes are used to divide the buffer layer into M elongated buffer layers, and at the same time, the first semiconductor material layer is divided into M elongated first semiconductor material layers ；

M個長條狀主動層，分別形成於該M個長條狀第一半導體材料層之上； M elongated active layers are respectively formed on the M elongated first semiconductor material layers;

M個長條狀第二半導體材料層，分別形成於該M個長條狀主動層之上； M long strip-shaped second semiconductor material layers are respectively formed on the M long strip-shaped active layers;

M×N個第一導電層，其中每個所述長條狀第一半導體材料層之上係形成有N個所述第一導電層； M×N first conductive layers, wherein N first conductive layers are formed on each of the strip-shaped first semiconductor material layers;

一絕緣層，覆於該M×N個第一導電層與該M個長條狀第二半導體材料層之上，且填入該複數條切割道之中；其中，該絕緣層之上開設有M×N個開口； An insulating layer covering the M×N first conductive layers and the M long strip-shaped second semiconductor material layers, and filling the plurality of cutting channels; wherein, the insulating layer is provided with M×N openings;

M×N個第二導電層，分別透過該M×N個開口而形成於該M個長條狀第二半導體材料層之上，使得每個所述長條狀第二半導體材料層之上形成有N個所述第二導電層；以及 M×N second conductive layers are respectively formed on the M long strip-shaped second semiconductor material layers through the M×N openings, so that each of the long strip-shaped second semiconductor material layers is formed There are N said second conductive layers; and

一光轉換單元，設置於該第二表面之上，且包括M×N個光轉換部； A light conversion unit, which is arranged on the second surface and includes M×N light conversion parts;

其中，一個所述長條狀第一半導體材料層、一個所述長條狀主動層和一個所述長條狀第二半導體材料層組成一個長條狀發光結構，且排成同一行的N個光轉換部係隔著 該面拋光透光基板而對應於同一個所述長條狀發光結構。 Wherein, one elongated first semiconductor material layer, one elongated active layer, and one elongated second semiconductor material layer form a elongated light emitting structure, and N pieces arranged in the same row The light conversion part is separated by The surface of the polished light-transmitting substrate corresponds to the same elongated light-emitting structure.

並且，本發明係同時提供前述使用雷射切割道絕緣之全彩LED顯示面板的製造方法，包括以下步驟： In addition, the present invention also provides a method for manufacturing the aforementioned full-color LED display panel insulated by laser cutting channels, which includes the following steps:

(1)提供具一第一表面與一第二表面的一雙面拋光透光基板； (1) Provide a double-sided polished light-transmitting substrate with a first surface and a second surface;

(2)依序形成一緩衝層、一第一半導體材料層、一主動層、以及一第二半導體材料層於該第一表面之上； (2) Sequentially forming a buffer layer, a first semiconductor material layer, an active layer, and a second semiconductor material layer on the first surface;

(3)利用微影蝕刻技術和一第一光阻層製作出完全貫穿該第二半導體材料層、該主動層、以及部分蝕刻該第一半導體材料層之N個長條狀凹槽，進而利用該N個長條狀凹槽將該第二半導體材料層分割成M個長條狀第二半導體材料層，同時將該主動層分割成M個長條狀主動層，之後去除該第一光阻層； (3) Using lithography etching technology and a first photoresist layer to make N long grooves that completely penetrate the second semiconductor material layer, the active layer, and partially etch the first semiconductor material layer, and then use The N elongated grooves divide the second semiconductor material layer into M elongated second semiconductor material layers, and at the same time, divide the active layer into M elongated active layers, and then remove the first photoresist Floor;

(4)以一第二光阻層覆於該長條狀第二半導體材料層之上，且令各所述長條狀凹槽之側壁覆有該第二光阻層； (4) Covering the elongated second semiconductor material layer with a second photoresist layer, and making the sidewalls of each of the elongated grooves covered with the second photoresist layer;

(5)令各所述長條狀凹槽之中形成有M個第一導電層； (5) M first conductive layers are formed in each of the elongated grooves;

(6)利用雷射切割技術對各個所述長條狀凹槽的底部進行切割，以於該雙面拋光透光基板的該第一表面之上製作出複數條切割道，進而利用該複數條切割道將該緩衝層分割成M個長條狀緩衝層，同時將該第一半導體材料層分割成M個長條狀第一半導體材料層； (6) Using laser cutting technology to cut the bottom of each of the elongated grooves, so as to form a plurality of cutting channels on the first surface of the double-sided polished light-transmitting substrate, and then use the plurality of cutting channels. The dicing lane divides the buffer layer into M elongated buffer layers, and at the same time divides the first semiconductor material layer into M elongated first semiconductor material layers;

(7)令各所述長條狀第二半導體材料層之上形成有N個第三光阻層； (7) N third photoresist layers are formed on each of the elongated second semiconductor material layers;

(8)形成一絕緣層覆蓋該M個長條狀第二半導體材料層，且令該絕緣層填入該M個長條狀凹槽以及該複數個切割道之中； (8) An insulating layer is formed to cover the M long strip-shaped second semiconductor material layers, and the insulating layer is filled into the M long strip-shaped grooves and the plurality of cutting channels;

(9)去除M×N個所述第三光阻層，使得該絕緣層具有M×N個開口用以露出該第二半導體材料層； (9) removing the M×N third photoresist layers, so that the insulating layer has M×N openings for exposing the second semiconductor material layer;

(10)以一第四光阻層覆於該覆蓋該絕緣層之上； (10) Cover the insulating layer with a fourth photoresist layer;

(11)令M×N個第二導電層分別形成於該M×N個開口之中，接著去除該第四光阻層；以及 (11) Let M×N second conductive layers be respectively formed in the M×N openings, and then remove the fourth photoresist layer; and

(12)於該第二表面之上設置包括M×N個光轉換部的一光轉換單元，完成一全彩LED顯示面板之製作。 (12) A light conversion unit including M×N light conversion parts is arranged on the second surface to complete the manufacture of a full-color LED display panel.

在一可行實施例中，本發明之使用雷射切割道絕緣之全彩LED顯示面板更包括： In a feasible embodiment, the full-color LED display panel insulated by laser cutting channels of the present invention further includes:

M條第一橋接導線，其中，各所述第一橋接導線與排列在同一列的N個所述第一導電層連接，且各所述第一橋接導線之上形成有一第一共電極。 M first bridging wires, wherein each of the first bridging wires is connected to the N first conductive layers arranged in the same column, and a first common electrode is formed on each of the first bridging wires.

於前述本發明之使用雷射切割道絕緣之全彩LED顯示面板的實施例中，該光轉換單元包括： In the foregoing embodiment of the full-color LED display panel insulated by laser cutting channels of the present invention, the light conversion unit includes:

一透光基板； A transparent substrate;

一遮光層，形成於該透光基板的一設置面之上，且由一遮光材料製成； A light-shielding layer formed on a setting surface of the light-transmitting substrate and made of a light-shielding material;

複數個第一穿孔，形成於該遮光層之上，且該複數個第 一穿孔共排列成M/3行及N/3列；其中，各所述第一穿孔與該透光基板的該設置面一同組成一第一容置槽； A plurality of first through holes are formed on the light-shielding layer, and the plurality of first through holes A perforation is arranged in M/3 rows and N/3 columns; wherein, each of the first perforations and the setting surface of the light-transmitting substrate form a first accommodating groove;

複數個第二穿孔，形成於該遮光層之上，且該複數個第二穿孔共排列成M/3行及N/3列；其中，各所述第二穿孔與該透光基板的該設置面一同組成一第二容置槽；以及 A plurality of second perforations are formed on the light-shielding layer, and the plurality of second perforations are arranged in M/3 rows and N/3 columns; wherein, each of the second perforations and the arrangement of the transparent substrate The surfaces together form a second accommodating slot; and

複數個第三穿孔，形成於該遮光層之上，且該複數個第三穿孔共排列成M/3行及N/3列；其中，各所述第三穿孔與該透光基板的該設置面一同組成一第三容置槽； A plurality of third through holes are formed on the light-shielding layer, and the plurality of third through holes are arranged in M/3 rows and N/3 columns; wherein, each of the third through holes and the arrangement of the transparent substrate The surfaces together form a third accommodating groove;

其中，一紅光量子點材料係填充在各所述第一容置槽之中，且一綠光量子點材料係填充在各所述第二容置槽之中。 Wherein, a red light quantum dot material is filled in each of the first accommodating grooves, and a green light quantum dot material is filled in each of the second accommodating grooves.

在一可行實施例中，一藍光量子點材料係填充在各所述第三容置槽之中。 In a feasible embodiment, a blue quantum dot material is filled in each of the third accommodating grooves.

在一可行實施例中，本發明之使用雷射切割道絕緣之全彩LED顯示面板與一驅動電路模組一起組合成一全彩LED顯示裝置，該驅動電路模組具有M個第一接點用以分別與該M個第一共電極電性連接，且該驅動電路模組還具有M×N個第二接點用以分別與該M×N個第二導電層電性連接。 In a possible embodiment, the full-color LED display panel insulated by laser cutting channels of the present invention is combined with a driving circuit module to form a full-color LED display device. The driving circuit module has M first contacts for It is electrically connected with the M first common electrodes, and the driving circuit module further has M×N second contacts for electrically connecting with the M×N second conductive layers.

在一可行實施例中，包含本發明之使用雷射切割道絕緣之全彩LED顯示面板以及與驅動電路模組的全彩LED顯示裝置進一步與一觸控面板組合成一全彩LED觸控顯示裝置，且該觸控面板置於該光轉換單元之上。 In a feasible embodiment, the full-color LED display panel insulated with the laser cutting channel of the present invention and the full-color LED display device with the drive circuit module are further combined with a touch panel to form a full-color LED touch display device , And the touch panel is placed on the light conversion unit.

於前述本發明之使用雷射切割道絕緣之全彩LED顯示面板的實施例中，該雙面拋光透光基板可為下列任一者：雙面拋光藍寶石基板、雙面拋光尖晶石基板、雙面拋光碳化矽基板、雙面拋光玻璃基板、或雙面拋光石英基板。 In the foregoing embodiment of the full-color LED display panel insulated by laser cutting channels of the present invention, the double-sided polished transparent substrate can be any of the following: double-sided polished sapphire substrate, double-sided polished spinel substrate, Double-sided polished silicon carbide substrate, double-sided polished glass substrate, or double-sided polished quartz substrate.

於前述本發明之使用雷射切割道絕緣之全彩LED顯示面板的實施例中，該絕緣層由一遮光材料製成，且該緩衝層的製造材料可為下列任一者：未摻雜的氮化鎵(undoped GaN)、氮化鋁(AlN)、或氧化鋅(ZnO)。 In the foregoing embodiment of the full-color LED display panel insulated by laser cutting channels of the present invention, the insulating layer is made of a light-shielding material, and the buffer layer can be made of any of the following materials: undoped Gallium nitride (undoped GaN), aluminum nitride (AlN), or zinc oxide (ZnO).

於前述本發明之使用雷射切割道絕緣之全彩LED顯示面板的實施例中，該長條狀主動層於該長條狀第一半導體材料層與該長條狀第二半導體材料層之間形成一個多重量子井結構，且該多重量子井結構為一未摻雜的氮化鎵(undoped GaN)層與一氮化銦鎵(InxGa1-xN)層的一多重交互堆疊結構。並且，對應於該多重量子井結構包含彼此交互堆疊的多個所述未摻雜的氮化鎵層與多個所述氮化銦鎵層，該M×N個光轉換部包括：複數個紅光轉換部、複數個綠光轉換部以及複數個空轉換部。 In the foregoing embodiment of the full-color LED display panel insulated by laser cutting channels of the present invention, the elongated active layer is between the elongated first semiconductor material layer and the elongated second semiconductor material layer A multiple quantum well structure is formed, and the multiple quantum well structure is a multiple alternating stack structure of an undoped GaN layer and an In x Ga 1-x N layer . And, corresponding to the multiple quantum well structure including a plurality of undoped gallium nitride layers and a plurality of indium gallium nitride layers stacked alternately with each other, the M×N light conversion parts include: a plurality of red A light conversion section, a plurality of green light conversion sections, and a plurality of empty conversion sections.

於前述本發明之使用雷射切割道絕緣之全彩LED顯示面板的實施例中，該長條狀主動層於該長條狀第一半導體材料層與該長條狀第二半導體材料層之間形成一個多重量子井結構，且該多重量子井結構為一氮化鋁鎵(AlxGa1-xN)層與一氮化銦鎵(InxGa1-xN)層的多重交互堆疊 結構。並且，對應於該多重量子井結構包含彼此交互堆疊的多個所述未摻雜的氮化鎵層與多個所述氮化銦鎵層，該M×N個光轉換部包括：複數個紅光轉換部、複數個綠光轉換部以及複數個藍光轉換部。 In the foregoing embodiment of the full-color LED display panel insulated by laser cutting channels of the present invention, the elongated active layer is between the elongated first semiconductor material layer and the elongated second semiconductor material layer A multiple quantum well structure is formed, and the multiple quantum well structure is a multiple alternating stack structure of an aluminum gallium nitride (Al x Ga 1-x N) layer and an indium gallium nitride (In x Ga 1-x N) layer . And, corresponding to the multiple quantum well structure including a plurality of undoped gallium nitride layers and a plurality of indium gallium nitride layers stacked alternately with each other, the M×N light conversion parts include: a plurality of red A light conversion section, a plurality of green light conversion sections, and a plurality of blue light conversion sections.

<本發明> <The present invention>

1‧‧‧全彩LED顯示面板 1‧‧‧Full color LED display panel

10‧‧‧雙面拋光透光基板 10‧‧‧Double-sided polished translucent substrate

101‧‧‧第一表面 101‧‧‧First surface

102‧‧‧第二表面 102‧‧‧Second surface

10G‧‧‧切割道 10G‧‧‧cutting road

11‧‧‧長條狀發光結構 11‧‧‧Long strip light-emitting structure

11B‧‧‧緩衝層 11B‧‧‧Buffer layer

11BL‧‧‧長條狀緩衝層 11BL‧‧‧Long buffer layer

11N‧‧‧第一半導體材料層 11N‧‧‧First semiconductor material layer

11NL‧‧‧長條狀第一半導體材料層 11NL‧‧‧Elongated first semiconductor material layer

11A‧‧‧主動層 11A‧‧‧Active layer

11AL‧‧‧長條狀主動層 11AL‧‧‧Strip active layer

11P‧‧‧第二半導體材料層 11P‧‧‧Second semiconductor material layer

11PL‧‧‧長條狀第二半導體材料層 11PL‧‧‧Long strip of second semiconductor material layer

1P‧‧‧第一導電層 1P‧‧‧First conductive layer

2P‧‧‧第二導電層 2P‧‧‧Second conductive layer

12‧‧‧絕緣層 12‧‧‧Insulation layer

12O‧‧‧開口 12O‧‧‧Open

15‧‧‧光轉換單元 15‧‧‧Optical Conversion Unit

150‧‧‧透光基板 150‧‧‧Transparent substrate

15S‧‧‧遮光層 15S‧‧‧Shading layer

O1‧‧‧第一穿孔 O1‧‧‧First Piercing

O2‧‧‧第二穿孔 O2‧‧‧Second Piercing

O3‧‧‧第三穿孔 O3‧‧‧Third perforation

15R‧‧‧紅光轉換部 15R‧‧‧Red light conversion part

15G‧‧‧綠光轉換部 15G‧‧‧Green Light Conversion

15B‧‧‧藍光轉換部 15B‧‧‧Blu-ray Conversion

15N‧‧‧空轉換部 15N‧‧‧Air Conversion Department

BL1‧‧‧第一橋接導線 BL1‧‧‧First bridge wire

CE1‧‧‧第一共電極 CE1‧‧‧First common electrode

TP‧‧‧觸控面板 TP‧‧‧Touch Panel

S1-S12‧‧‧步驟 S1-S12‧‧‧Step

PR1‧‧‧第一光阻層 PR1‧‧‧First photoresist layer

PR2‧‧‧第二光阻層 PR2‧‧‧Second photoresist layer

PR3‧‧‧第三光阻層 PR3‧‧‧The third photoresist layer

PR4‧‧‧第四光阻層 PR4‧‧‧The fourth photoresist layer

RG1‧‧‧長條狀凹槽 RG1‧‧‧Long groove

<習知> <Learning>

無 no

圖1顯示本發明之一種使用雷射切割道絕緣之全彩LED顯示面板的示意性側剖視圖； Figure 1 shows a schematic side cross-sectional view of a full-color LED display panel insulated by laser cutting channels according to the present invention;

圖2A顯示光轉換單元的第一示意性立體圖； Fig. 2A shows a first schematic perspective view of the light conversion unit;

圖2B顯示光轉換單元的第二示意性立體圖； Fig. 2B shows a second schematic perspective view of the light conversion unit;

圖3顯示本發明之使用雷射切割道絕緣之全彩LED顯示面板的示意性立體圖； Fig. 3 shows a schematic perspective view of a full-color LED display panel insulated by laser cutting channels according to the present invention;

圖4顯示本發明之使用雷射切割道絕緣之全彩LED顯示面板的示意性上視圖； 4 shows a schematic top view of the full-color LED display panel insulated by laser cutting channels according to the present invention;

圖5顯示本發明之使用雷射切割道絕緣之全彩LED顯示面板以及一觸控面板的示意性側剖視圖； 5 shows a schematic side sectional view of a full-color LED display panel and a touch panel insulated by laser cutting channels according to the present invention;

圖6A、圖6B與圖6C顯示本發明之一種使用雷射切割道絕緣之全彩LED顯示面板的製造方法的流程圖；以及 6A, 6B, and 6C show a flow chart of a manufacturing method of a full-color LED display panel insulated by laser cutting channels according to the present invention; and

圖7A至圖7K為本發明之使用雷射切割道絕緣之全彩LED顯示面板的示意性製造流程圖。 7A to 7K are schematic manufacturing flowcharts of the full-color LED display panel insulated by laser cutting channels according to the present invention.

為了能夠更清楚地描述本發明所提出之一種使用雷射切割道絕緣之全彩LED顯示面板及其製造方法，以下將配合圖式，詳盡說明本發明之較佳實施例。 In order to be able to more clearly describe a full-color LED display panel using laser cutting channel insulation and its manufacturing method proposed by the present invention, the preferred embodiments of the present invention will be described in detail below in conjunction with the drawings.

使用雷射切割道絕緣之全彩LED顯示面板的結構 The structure of a full-color LED display panel insulated with laser cutting channels

圖1顯示本發明之一種使用雷射切割道絕緣之全彩LED顯示面板的示意性側剖視圖。本發明之使用雷射切割道絕緣之全彩LED顯示面板1(下文簡稱“全彩LED顯示面板1”)主要包括：具有一第一表面101與一第二表面102的一雙面拋光透光基板10、M個長條狀緩衝層11BL、M個長條狀第一半導體材料層11NL、M個長條狀主動層11AL、M個長條狀第二半導體材料層11PL、M×N個第一導電層1P、一絕緣層12、M×N個第二導電層2P、以及一光轉換單元15。在可行的實施例中，該雙面拋光透光基板10可為下列任一者：雙面拋光藍寶石基板、雙面拋光尖晶石基板、雙面拋光碳化矽基板、雙面拋光玻璃基板、或雙面拋光石英基板。 Fig. 1 shows a schematic side cross-sectional view of a full-color LED display panel insulated by laser cutting channels according to the present invention. The full-color LED display panel 1 (hereinafter referred to as "full-color LED display panel 1") using laser cutting channel insulation of the present invention mainly includes: a double-sided polished light-transmitting panel with a first surface 101 and a second surface 102 Substrate 10, M elongated buffer layers 11BL, M elongated first semiconductor material layers 11NL, M elongated active layers 11AL, M elongated second semiconductor material layers 11PL, M×N A conductive layer 1P, an insulating layer 12, M×N second conductive layers 2P, and a light conversion unit 15. In a feasible embodiment, the double-sided polished light-transmitting substrate 10 can be any of the following: double-sided polished sapphire substrate, double-sided polished spinel substrate, double-sided polished silicon carbide substrate, double-sided polished glass substrate, or Double-sided polished quartz substrate.

特別說明的是，在該第一表面101之上形成有一緩衝層11B和一第一半導體材料層11N的情況下，本發明利用雷射切割技術對該第一半導體材料層11N和該緩衝層11B進行切割，以於該雙面拋光透光基板10的該第一表面101之上製作出複數條切割道10G，進而利用該複數條 切割道10G將該緩衝層11B分割成M個所述長條狀緩衝層11BL，同時將該第一半導體材料層11N分割成M個所述長條狀第一半導體材料層11NL。並且，該M個長條狀主動層11AL分別形成於該M個長條狀第一半導體材料層11NL之上，且該M個長條狀第二半導體材料層11PL分別形成於該M個長條狀主動層11AL之上。如圖1所示，每個所述長條狀第一半導體材料層11NL之上係形成有N個所述第一導電層1P，使得全彩LED顯示面板1包含M×N個所述第一導電層1P。 Specifically, in the case where a buffer layer 11B and a first semiconductor material layer 11N are formed on the first surface 101, the present invention uses laser cutting technology for the first semiconductor material layer 11N and the buffer layer 11B. Cutting is performed to make a plurality of cutting lanes 10G on the first surface 101 of the double-sided polished and transparent substrate 10, and then use the plurality of cutting lanes 10G. The scribe lane 10G divides the buffer layer 11B into M elongated buffer layers 11BL, and at the same time divides the first semiconductor material layer 11N into M elongated first semiconductor material layers 11NL. In addition, the M elongated active layers 11AL are respectively formed on the M elongated first semiconductor material layers 11NL, and the M elongated second semiconductor material layers 11PL are respectively formed on the M elongated Above the active layer 11AL. As shown in FIG. 1, N first conductive layers 1P are formed on each of the elongated first semiconductor material layers 11NL, so that the full-color LED display panel 1 includes M×N first conductive layers 1P. Conductive layer 1P.

另一方面，本發明採用遮光材料製成所述絕緣層12，使其覆於該M×N個第一導電層1P與該M個長條狀第二半導體材料層11PL之上，且填入該複數條切割道10G之中。依據本發明之設計，該絕緣層12之上開設有M×N個開口12O，且M×N個所述第二導電層2P分別透過該M×N個開口12O而形成於該M個長條狀第二半導體材料層11PL之上。值得說明的是，一個所述長條狀第一半導體材料層11NL、一個所述長條狀主動層11AL和一個所述長條狀第二半導體材料層11PL組成一個長條狀發光結構，且排成同一行的N個光轉換部係隔著該雙面拋光透光基板10而對應於同一個所述長條狀發光結構11。 On the other hand, the present invention uses a light-shielding material to make the insulating layer 12 so as to cover the M×N first conductive layers 1P and the M long strip-shaped second semiconductor material layers 11PL, and fill in Among the plurality of cutting lanes 10G. According to the design of the present invention, the insulating layer 12 is provided with M×N openings 12O, and the M×N second conductive layers 2P are formed in the M strips through the M×N openings 120, respectively. Above the second semiconductor material layer 11PL. It is worth noting that one elongated first semiconductor material layer 11NL, one elongated active layer 11AL, and one elongated second semiconductor material layer 11PL form an elongated light-emitting structure, which is arranged in a row. The N light conversion parts in the same row correspond to the same elongated light-emitting structure 11 via the double-sided polished light-transmitting substrate 10.

更詳細地說明，前述長條狀緩衝層11BL的製程材料通常為未摻雜的氮化鎵(undoped GaN)、氮化鋁 (AlN)、或氧化鋅(ZnO)。另一方面，該長條狀第一半導體材料層11NL之製造材料為N型氮化鎵(n-type gallium nitride,n-GaN)，且該長條狀第二半導體材料層11PL之製造材料為P型氮化鎵(p-type gallium nitride,p-GaN)。並且，該長條狀主動層11AL通常會在該長條狀第一半導體材料層11NL與該長條狀第二半導體材料層11PL之間形成一個多重量子井結構。值得特別說明的是，在所述多重量子井結構為一未摻雜的氮化鎵(undoped GaN)層與一氮化銦鎵(InxGa1-xN)層的一多重交互堆疊結構的情況下，只要施予電壓驅動至該長條狀第一半導體材料層11NL和該長條狀第二半導體材料層11PL，M個所述長條狀主動層11AL會發出一藍色光。另一方面，若所述多重量子井結構為一氮化鋁鎵(AlxGa1-xN)層與一氮化銦鎵(InxGa1-xN)層的多重交互堆疊結構，只要施予電壓驅動至該長條狀第一半導體材料層11NL和該長條狀第二半導體材料層11PL，M個所述長條狀主動層11AL會發出一紫色光。 In more detail, the process material of the aforementioned long buffer layer 11BL is usually undoped GaN, aluminum nitride (AlN), or zinc oxide (ZnO). On the other hand, the manufacturing material of the elongated first semiconductor material layer 11NL is n-type gallium nitride (n-GaN), and the manufacturing material of the elongated second semiconductor material layer 11PL is P-type gallium nitride (p-type gallium nitride, p-GaN). Moreover, the elongated active layer 11AL usually forms a multiple quantum well structure between the elongated first semiconductor material layer 11NL and the elongated second semiconductor material layer 11PL. It is worth noting that the multiple quantum well structure is a multiple interactive stacked structure of an undoped gallium nitride (undoped GaN) layer and an indium gallium nitride (In x Ga 1-x N) layer. In the case, as long as voltage is applied to the elongated first semiconductor material layer 11NL and the elongated second semiconductor material layer 11PL, the M elongated active layers 11AL will emit a blue light. On the other hand, if the multiple quantum well structure is a multiple alternate stacked structure of an aluminum gallium nitride (Al x Ga 1-x N) layer and an indium gallium nitride (In x Ga 1-x N) layer, as long as A voltage is applied to drive the elongated first semiconductor material layer 11NL and the elongated second semiconductor material layer 11PL, and the M elongated active layers 11AL will emit a purple light.

繼續參閱圖2A與圖2B，其分別顯示光轉換單元15的一第一示意性立體圖和一第二示意性立體圖。如圖2A所示，該光轉換單元15的主體結構包括一透光基板150以及一遮光層15S，其中該遮光層15S，形成於該透光基板150的一設置面之上，且由一遮光材料製成。值得注意的是，複數個第一穿孔O1系形成於該遮光層15S之上，且 該複數個第一穿孔O1共排列成M/3行及N/3列；其中，各所述第一穿孔O1與該透光基板150的該設置面一同組成一第一容置槽。此外，複數個第二穿孔O2係形成於該遮光層15S之上，且該複數個第二穿孔O2共排列成M/3行及N/3列；其中，各所述第二穿孔O2與該透光基板150的該設置面一同組成一第二容置槽。再者，複數個第三穿孔O3係形成於該遮光層15S之上，且該複數個第三穿孔O3共排列成M/3行及N/3列；其中，各所述第三穿孔O3與該透光基板150的該設置面一同組成一第三容置槽。 Continue to refer to FIGS. 2A and 2B, which show a first schematic perspective view and a second schematic perspective view of the light conversion unit 15 respectively. As shown in FIG. 2A, the main structure of the light conversion unit 15 includes a light-transmitting substrate 150 and a light-shielding layer 15S. The light-shielding layer 15S is formed on a setting surface of the light-transmitting substrate 150 and is formed by a light-shielding layer 15S. Made of materials. It is worth noting that a plurality of first through holes O1 are formed on the light-shielding layer 15S, and The plurality of first through holes O1 are arranged in M/3 rows and N/3 columns; wherein, each of the first through holes O1 and the arrangement surface of the transparent substrate 150 together form a first accommodating groove. In addition, a plurality of second through-holes O2 are formed on the light-shielding layer 15S, and the plurality of second through-holes O2 are arranged in M/3 rows and N/3 columns; wherein, each of the second through-holes O2 and the The setting surface of the transparent substrate 150 together constitute a second accommodating groove. Furthermore, a plurality of third through holes O3 are formed on the light-shielding layer 15S, and the plurality of third through holes O3 are arranged in M/3 rows and N/3 columns; wherein, each of the third through holes O3 and The setting surface of the light-transmitting substrate 150 together forms a third accommodating groove.

對應於各所述長條狀主動層11AL係射出一藍色光，如圖2A所示本發明係令一紅光量子點材料填充在各所述第一容置槽之中且令一綠光量子點材料填充在各所述第二容置槽之中，使得該光轉換單元15的M×N個光轉換部包括：複數個紅光轉換部15R、複數個綠光轉換部15G以及複數個空(blank)轉換部15N。 Corresponding to each of the elongated active layers 11AL, a blue light is emitted. As shown in FIG. 2A, the present invention allows a red light quantum dot material to be filled in each of the first accommodating grooves and a green light quantum dot material Filled in each of the second accommodating grooves so that the M×N light conversion parts of the light conversion unit 15 include: a plurality of red light conversion parts 15R, a plurality of green light conversion parts 15G, and a plurality of blanks ) Conversion part 15N.

另一方面，對應於各所述長條狀主動層11AL係射出一紫色光，如圖2B所示，本發明令一紅光量子點材料填充在各所述第一容置槽之中，令一綠光量子點材料填充在各所述第二容置槽之中，且令一藍光量子點材料係填充在各所述第三容置槽之中，使得該光轉換單元15的M×N個光轉換部包括：複數個紅光轉換部15R、複數個綠光轉換部15G以及複數個藍光轉換部15B。 On the other hand, corresponding to each of the elongated active layers 11AL, a purple light is emitted. As shown in FIG. 2B, the present invention allows a red light quantum dot material to be filled in each of the first accommodating grooves, so that a Green light quantum dot material is filled in each of the second accommodating grooves, and a blue light quantum dot material is filled in each of the third accommodating grooves, so that the M×N light of the light conversion unit 15 The conversion unit includes a plurality of red light conversion units 15R, a plurality of green light conversion units 15G, and a plurality of blue light conversion units 15B.

圖3顯示本發明之使用雷射切割道絕緣之全彩LED顯示面板的示意性立體圖，且圖4顯示本發明之使用雷射切割道絕緣之全彩LED顯示面板的示意性上視圖。特別說明的是，圖3和圖4之中並未繪出雙面拋光透光基板10以及絕緣層12，目的在於清楚地顯示出各所述長條狀第一半導體材料層11NL之上的N個第一導電層1P，並顯示出各所述長條狀第二半導體材料層11PL之上的N個第二導電層2P。依據本發明之設計，所述全彩LED顯示面板1還包括M條第一橋接導線BL1，其中，各所述第一橋接導線BL1與排列在同一列的N個所述第一導電層1P連接，且各所述第一橋接導線BL1之上形成有一第一共電極CE1。可想而知，在利用各所述第一橋接導線BL1與排列在同一列的N個所述第一導電層1P連接的情況下，係有利於本發明之全彩LED顯示面板1與一驅動電路模組一起組合成一全彩LED顯示裝置。應可理解，該驅動電路模組具有M個第一接點用以分別與該M個第一共電極CE1電性連接，且該驅動電路模組還具有M×N個第二接點用以分別與該M×N個第二導電層2P電性連接。 FIG. 3 shows a schematic perspective view of the full-color LED display panel insulated by laser cutting channels of the present invention, and FIG. 4 shows a schematic top view of the full-color LED display panel insulated by laser cutting channels of the present invention. In particular, FIGS. 3 and 4 do not depict the double-sided polished light-transmitting substrate 10 and the insulating layer 12, and the purpose is to clearly show the N on each of the elongated first semiconductor material layers 11NL. There are two first conductive layers 1P, and N second conductive layers 2P on each of the elongated second semiconductor material layers 11PL are shown. According to the design of the present invention, the full-color LED display panel 1 further includes M first bridging wires BL1, wherein each of the first bridging wires BL1 is connected to the N first conductive layers 1P arranged in the same column , And a first common electrode CE1 is formed on each of the first bridging wires BL1. It is conceivable that when each of the first bridging wires BL1 is connected to the N first conductive layers 1P arranged in the same row, it is beneficial to the full-color LED display panel 1 of the present invention and a driver. The circuit modules are combined together to form a full-color LED display device. It should be understood that the drive circuit module has M first contacts for electrically connecting with the M first common electrodes CE1, and the drive circuit module also has M×N second contacts for They are respectively electrically connected to the M×N second conductive layers 2P.

進一步地，圖5顯示本發明之使用雷射切割道絕緣之全彩LED顯示面板1以及一觸控面板TP的示意性側剖視圖。在一擴增實施例中，由驅動電路模組和本發明之全彩LED顯示面板1所組成的全彩LED顯示裝置還可進 一步與一觸控面板TP組合成一全彩LED觸控顯示裝置，且該觸控面板TP置於該光轉換單元15之上。 Furthermore, FIG. 5 shows a schematic side cross-sectional view of the full-color LED display panel 1 and a touch panel TP insulated by laser cutting tunnels of the present invention. In an expanded embodiment, the full-color LED display device composed of the drive circuit module and the full-color LED display panel 1 of the present invention can also be further improved One step is combined with a touch panel TP to form a full-color LED touch display device, and the touch panel TP is placed on the light conversion unit 15.

使用雷射切割道絕緣之全彩LED顯示面板的製造方法 Manufacturing method of full-color LED display panel insulated by laser cutting channel

圖6A、圖6B與圖6C顯示本發明之一種使用雷射切割道絕緣之全彩LED顯示面板的製造方法的流程圖。並且，圖7A至圖7K為本發明之使用雷射切割道絕緣之全彩LED顯示面板的示意性製造流程圖。如圖6A與圖7A所示，製造方法係首先執行步驟S1和步驟S2：提供具一第一表面101與一第二表面102的一雙面拋光透光基板10，且依序形成一緩衝層11B、一第一半導體材料層11N、一主動層11A、以及一第二半導體材料層11P於該第一表面101之上。接著，如圖7A與圖7B所示，於步驟S3之中，係利用微影蝕刻技術和一第一光阻層PR1製作出完全貫穿該第二半導體材料層11P、該主動層11A、以及部分蝕刻該第一半導體材料層11N之N個長條狀凹槽RG1，進而利用該N個長條狀凹槽RG1將該第二半導體材料層11P分割成M個長條狀第二半導體材料層11P L，同時將該主動層11A分割成M個長條狀主動層11AL，之後去除該第一光阻層PR1。 6A, 6B, and 6C show a flow chart of a manufacturing method of a full-color LED display panel using laser cutting channel insulation according to the present invention. In addition, FIGS. 7A to 7K are schematic manufacturing flowcharts of the full-color LED display panel insulated by laser cutting channels according to the present invention. As shown in FIGS. 6A and 7A, the manufacturing method first performs step S1 and step S2: a double-sided polished transparent substrate 10 with a first surface 101 and a second surface 102 is provided, and a buffer layer is sequentially formed 11B, a first semiconductor material layer 11N, an active layer 11A, and a second semiconductor material layer 11P on the first surface 101. Next, as shown in FIGS. 7A and 7B, in step S3, a photolithography technique and a first photoresist layer PR1 are used to fabricate completely through the second semiconductor material layer 11P, the active layer 11A, and part of Etch the N long grooves RG1 of the first semiconductor material layer 11N, and then use the N long grooves RG1 to divide the second semiconductor material layer 11P into M long second semiconductor material layers 11P L, the active layer 11A is divided into M elongated active layers 11AL at the same time, and then the first photoresist layer PR1 is removed.

如圖7C所示，於步驟S4之中，係以一第二光阻層PR2覆於該長條狀第二半導體材料層11PL之上，且令各 所述長條狀凹槽RG1之側壁覆有該第二光阻層PR2。接著，於步驟S5之中，令各所述長條狀凹槽RG1之中形成有M個第一導電層1P(如圖7D所示)。值得注意的是，於步驟S6之中，如圖7E所示，本發明利用雷射切割技術對各個所述長條狀凹槽RG1的底部進行切割，以於該雙面拋光透光基板10的該第一表面101之上製作出複數條切割道10G，進而利用該複數條切割道10G將該緩衝層11B分割成M個長條狀緩衝層11BL，同時將該第一半導體材料層11N分割成M個長條狀第一半導體材料層11N。繼續地，如圖7F所示，步驟S7係令各所述長條狀第二半導體材料層11PL之上形成有N個第三光阻層PR3。 As shown in FIG. 7C, in step S4, a second photoresist layer PR2 is used to cover the elongated second semiconductor material layer 11PL, and each The sidewall of the elongated groove RG1 is covered with the second photoresist layer PR2. Next, in step S5, M first conductive layers 1P are formed in each of the elongated grooves RG1 (as shown in FIG. 7D). It is worth noting that in step S6, as shown in FIG. 7E, the present invention uses laser cutting technology to cut the bottom of each of the elongated grooves RG1 to polish the transparent substrate 10 on both sides. A plurality of cutting lanes 10G are formed on the first surface 101, and then the buffer layer 11B is divided into M elongated buffer layers 11BL by using the plurality of cutting lanes 10G, and the first semiconductor material layer 11N is divided into M long strip-shaped first semiconductor material layers 11N. Continuing, as shown in FIG. 7F, in step S7, N third photoresist layers PR3 are formed on each of the elongated second semiconductor material layers 11PL.

如圖7G所示，於步驟S8之中，形成一絕緣層12覆蓋該M個長條狀第二半導體材料層11PL，且令該絕緣層12填入該M個長條狀凹槽RG1以及該複數個切割道10G之中。並且，如圖7H所示，步驟S9係去除M×N個所述第三光阻層PR3，使得該絕緣層12具有M×N個開口12O用以露出該第二半導體材料層11P。進一步地，如圖7I和圖7J所示，於步驟S10與步驟S11之中，係以一第四光阻層PR4覆於該覆蓋該絕緣層12之上，以令M×N個第二導電層2P分別形成於該M×N個開口12O之中。如圖7K所示，於步驟S12之中，於該第二表面102之上設置包括M×N個光轉換部的一光轉換單元15，完成一背接觸式全彩LED顯示面板 1之製作。 As shown in FIG. 7G, in step S8, an insulating layer 12 is formed to cover the M elongated second semiconductor material layers 11PL, and the insulating layer 12 is filled with the M elongated grooves RG1 and the Among the multiple cutting lanes 10G. And, as shown in FIG. 7H, step S9 is to remove the M×N third photoresist layers PR3, so that the insulating layer 12 has M×N openings 120 for exposing the second semiconductor material layer 11P. Further, as shown in FIGS. 7I and 7J, in step S10 and step S11, a fourth photoresist layer PR4 is used to cover the insulating layer 12 to make M×N second conductive layers. The layers 2P are respectively formed in the M×N openings 120. As shown in FIG. 7K, in step S12, a light conversion unit 15 including M×N light conversion parts is disposed on the second surface 102 to complete a back-contact full-color LED display panel 1 of the production.

如此，上述係已完整且清楚地說明本發明之一種全彩LED顯示面板及其製造方法；並且，經由上述可得知本發明係具有下列之優點： In this way, the above system has completely and clearly explained a full-color LED display panel of the present invention and its manufacturing method; and, from the above, it can be seen that the present invention has the following advantages:

(1)在本發明之全彩LED顯示面板的結構設計中，M個長條狀發光結構11形成於一雙面拋光透光基板10的一第一表面101之上。特別地，相鄰兩個長條狀發光結構11之間係由一雷射切割道10G所隔離，且各所述長條狀發光結構11包含一長條狀緩衝層11BL、一長條狀第一半導體材料層11NL、一長條狀主動層11AL、以及一長條狀第二半導體材料層11PL。並且，一絕緣層12形成於該第一表面101之上並覆蓋所述長條狀發光結構11。該絕緣層12內更製作有M×N個第一導電層1P，使得各所述長條狀第一半導體材料層11NL之上設有N個第一導電層1P。進一步地，藉由在該絕緣層12之上開設M×N個開口12O，各所述長條狀第二半導體材料層11PL之上可被設有N個第二導電層2P。如此設計，有利於使用一第一共電極線路BL連接排列在同一行的M個第一導電層1P，且令該全彩LED顯示面板1一共具有N條第一共電極線路BL1，用以與一外部顯示驅動晶片進行電性連接。 (1) In the structural design of the full-color LED display panel of the present invention, M elongated light-emitting structures 11 are formed on a first surface 101 of a double-sided polished light-transmitting substrate 10. In particular, two adjacent elongated light-emitting structures 11 are separated by a laser cutting channel 10G, and each of the elongated light-emitting structures 11 includes a elongated buffer layer 11BL and a elongated second layer. A semiconductor material layer 11NL, a long active layer 11AL, and a long second semiconductor material layer 11PL. In addition, an insulating layer 12 is formed on the first surface 101 and covers the elongated light-emitting structure 11. M×N first conductive layers 1P are further fabricated in the insulating layer 12, so that N first conductive layers 1P are provided on each of the elongated first semiconductor material layers 11NL. Further, by opening M×N openings 120 on the insulating layer 12, N second conductive layers 2P can be provided on each of the elongated second semiconductor material layers 11PL. Such a design facilitates the use of a first common electrode circuit BL to connect the M first conductive layers 1P arranged in the same row, and the full-color LED display panel 1 has a total of N first common electrode circuits BL1 for connecting with An external display driver chip is electrically connected.

必須加以強調的是，上述之詳細說明係針對本發明可行實施例之具體說明，惟該實施例並非用以限制本 發明之專利範圍，凡未脫離本發明技藝精神所為之等效實施或變更，均應包含於本案之專利範圍中。 It must be emphasized that the above detailed description is a specific description of a possible embodiment of the present invention, but the embodiment is not intended to limit the present invention. The scope of the patent for invention, any equivalent implementation or modification that does not deviate from the technical spirit of the invention, shall be included in the patent scope of this case.

1‧‧‧全彩LED顯示面板 1‧‧‧Full color LED display panel

10‧‧‧雙面拋光透光基板 10‧‧‧Double-sided polished translucent substrate

101‧‧‧第一表面 101‧‧‧First surface

102‧‧‧第二表面 102‧‧‧Second surface

10G‧‧‧切割道 10G‧‧‧cutting road

11‧‧‧長條狀發光結構 11‧‧‧Long strip light-emitting structure

11BL‧‧‧長條狀緩衝層 11BL‧‧‧Long buffer layer

11NL‧‧‧長條狀第一半導體材料層 11NL‧‧‧Elongated first semiconductor material layer

11AL‧‧‧長條狀主動層 11AL‧‧‧Strip active layer

11PL‧‧‧長條狀主動層 11PL‧‧‧Long active layer

1P‧‧‧第一導電層 1P‧‧‧First conductive layer

2P‧‧‧第二導電層 2P‧‧‧Second conductive layer

12‧‧‧絕緣層 12‧‧‧Insulation layer

12O‧‧‧開口 12O‧‧‧Open

15‧‧‧光轉換單元 15‧‧‧Optical Conversion Unit

150‧‧‧透光基板 150‧‧‧Transparent substrate

15S‧‧‧遮光層 15S‧‧‧Shading layer

15R‧‧‧紅光轉換部 15R‧‧‧Red light conversion part

15G‧‧‧綠光轉換部 15G‧‧‧Green Light Conversion

15B‧‧‧藍光轉換部 15B‧‧‧Blu-ray Conversion

Claims (24)

一種全彩LED顯示面板，包括：一雙面拋光透光基板，具一第一表面與一第二表面；一緩衝層，形成於該第一表面之上；一第一半導體材料層，形成於該緩衝層之上；其中，利用雷射切割技術對該第一半導體材料層和該緩衝層進行切割，以於該雙面拋光透光基板的該第一表面之上製作出複數條切割道，進而利用該複數條切割道將該緩衝層分割成M個長條狀緩衝層，同時將該第一半導體材料層分割成M個長條狀第一半導體材料層；M個長條狀主動層，分別形成於該M個長條狀第一半導體材料層之上；M個長條狀第二半導體材料層，分別形成於該M個長條狀主動層之上；M×N個第一導電層，其中每個所述長條狀第一半導體材料層之上係形成有N個所述第一導電層；一絕緣層，覆於該M×N個第一導電層與該M個長條狀第二半導體材料層之上，且填入該複數條切割道之中；其中，該絕緣層之上開設有M×N個開口；M×N個第二導電層，分別透過該M×N個開口而形成於該M個長條狀第二半導體材料層之上，使得每個所述長條狀第二半導體材料層之上形成有N個所述第二導電層；一光轉換單元，設置於該第二表面之上，且包括M×N 個光轉換部；以及M條第一橋接導線，其中，各所述第一橋接導線與排列在同一列的N個所述第一導電層連接，且各所述第一橋接導線之上形成有一第一共電極；其中，一個所述長條狀第一半導體材料層、一個所述長條狀主動層和一個所述長條狀第二半導體材料層組成一個長條狀發光結構，且排成同一行的N個光轉換部係隔著該面拋光透光基板而對應於同一個所述長條狀發光結構。 A full-color LED display panel includes: a double-sided polished light-transmitting substrate with a first surface and a second surface; a buffer layer formed on the first surface; a first semiconductor material layer formed on the Above the buffer layer; wherein the laser cutting technology is used to cut the first semiconductor material layer and the buffer layer to form a plurality of cutting channels on the first surface of the double-sided polished transparent substrate, Furthermore, the plurality of cutting channels are used to divide the buffer layer into M elongated buffer layers, and at the same time the first semiconductor material layer is divided into M elongated first semiconductor material layers; M elongated active layers, Are respectively formed on the M elongated first semiconductor material layers; M elongated second semiconductor material layers are respectively formed on the M elongated active layers; M×N first conductive layers , Wherein N first conductive layers are formed on each of the elongated first semiconductor material layers; an insulating layer covering the M×N first conductive layers and the M elongated first conductive layers On the second semiconductor material layer and filled into the plurality of dicing channels; wherein, M×N openings are opened on the insulating layer; M×N second conductive layers pass through the M×N Openings are formed on the M elongated second semiconductor material layers, so that N second conductive layers are formed on each of the elongated second semiconductor material layers; a light conversion unit is provided On the second surface, and includes M×N And M first bridging wires, wherein each of the first bridging wires is connected to the N first conductive layers arranged in the same column, and each of the first bridging wires is formed with a The first common electrode; wherein, one of said long strip-shaped first semiconductor material layer, one said long strip-shaped active layer and one said long strip-shaped second semiconductor material layer form a strip-shaped light-emitting structure, and are arranged in The N light conversion parts in the same row correspond to the same elongated light-emitting structure by polishing the light-transmitting substrate across the surface. 如申請專利範圍第1項所述之全彩LED顯示面板，其中，該光轉換單元包括：一透光基板；一遮光層，形成於該透光基板的一設置面之上，且由一遮光材料製成；複數個第一穿孔，形成於該遮光層之上，且該複數個第一穿孔共排列成M/3行及N/3列；其中，各所述第一穿孔與該透光基板的該設置面一同組成一第一容置槽；複數個第二穿孔，形成於該遮光層之上，且該複數個第二穿孔共排列成M/3行及N/3列；其中，各所述第二穿孔與該透光基板的該設置面一同組成一第二容置槽；以及複數個第三穿孔，形成於該遮光層之上，且該複數個第三穿孔共排列成M/3行及N/3列；其中，各所述第三穿 孔與該透光基板的該設置面一同組成一第三容置槽；其中，一紅光量子點材料係填充在各所述第一容置槽之中，且一綠光量子點材料係填充在各所述第二容置槽之中。 According to the full-color LED display panel described in item 1 of the scope of patent application, the light conversion unit includes: a light-transmitting substrate; Made of material; a plurality of first perforations are formed on the light-shielding layer, and the plurality of first perforations are arranged in M/3 rows and N/3 columns; wherein, each of the first perforations and the light-transmitting The arrangement surface of the substrate together constitutes a first accommodating groove; a plurality of second perforations are formed on the light shielding layer, and the plurality of second perforations are arranged in M/3 rows and N/3 columns; wherein, Each of the second through holes and the setting surface of the light-transmitting substrate together form a second accommodating groove; and a plurality of third through holes are formed on the light shielding layer, and the plurality of third through holes are arranged in a total of M /3 rows and N/3 columns; among them, each of the third passes The hole and the arrangement surface of the light-transmitting substrate together form a third accommodating groove; wherein, a red light quantum dot material is filled in each of the first accommodating grooves, and a green light quantum dot material is filled in each In the second accommodating groove. 如申請專利範圍第2項所述之全彩LED顯示面板，其中，一藍光量子點材料係填充在各所述第三容置槽之中。 According to the full-color LED display panel described in item 2 of the scope of patent application, a blue quantum dot material is filled in each of the third accommodating grooves. 如申請專利範圍第1項所述之全彩LED顯示面板，其中，所述全彩LED顯示面板與一驅動電路模組組合成一全彩LED顯示裝置，該驅動電路模組具有M個第一接點用以分別與該M個第一共電極電性連接，且該驅動電路模組還具有M×N個第二接點用以分別與該M×N個第二導電層電性連接。 The full-color LED display panel described in item 1 of the scope of patent application, wherein the full-color LED display panel and a drive circuit module are combined to form a full-color LED display device, and the drive circuit module has M first connections The dots are used for electrically connecting with the M first common electrodes, and the driving circuit module also has M×N second contacts for electrically connecting with the M×N second conductive layers. 如申請專利範圍第4項所述之全彩LED顯示面板，其中，所述全彩LED顯示裝置與一觸控面板組合成一全彩LED觸控顯示裝置，且該觸控面板置於該光轉換單元之上。 The full-color LED display panel described in item 4 of the scope of patent application, wherein the full-color LED display device and a touch panel are combined to form a full-color LED touch display device, and the touch panel is placed in the light conversion Above the unit. 如申請專利範圍第1項所述之全彩LED顯示面板，其中，該絕緣層的製程材料為一遮光材料，且該緩衝層的製造材料可為下列任一者：未摻雜的氮化鎵(undoped GaN)、氮化鋁(AlN)、或氧化鋅(ZnO)。 For the full-color LED display panel described in item 1 of the scope of patent application, wherein the insulating layer is made of a light-shielding material, and the buffer layer can be made of any one of the following: undoped gallium nitride (undoped GaN), aluminum nitride (AlN), or zinc oxide (ZnO). 如申請專利範圍第1項所述之全彩LED顯示面板，其中，該雙面拋光透光基板可為下列任一者：雙面拋光藍寶石基板、雙面拋光尖晶石基板、雙面拋光碳化矽基板、雙面拋光玻璃基板、或雙面拋光石英基板。 The full-color LED display panel described in item 1 of the scope of patent application, wherein the double-sided polished light-transmitting substrate can be any of the following: double-sided polished sapphire substrate, double-sided polished spinel substrate, double-sided polished and carbonized Silicon substrate, double-sided polished glass substrate, or double-sided polished quartz substrate. 如申請專利範圍第1項所述之全彩LED顯示面板，其中，該長條狀第一半導體材料層之製造材料為N型氮化鎵(n-type gallium nitride,n-GaN)，且所述長條狀第二半導體材料層之製造材料為P型氮化鎵(p-type gallium nitride,p-GaN)。 The full-color LED display panel described in item 1 of the scope of patent application, wherein the manufacturing material of the elongated first semiconductor material layer is n-type gallium nitride (n-GaN), and The manufacturing material of the elongated second semiconductor material layer is p-type gallium nitride (p-GaN). 如申請專利範圍第2項所述之全彩LED顯示面板，其中，該長條狀主動層於該長條狀第一半導體材料層與該長條狀第二半導體材料層之間形成一個多重量子井結構，且該多重量子井結構為一未摻雜的氮化鎵(undoped GaN)層與一氮化銦鎵(InxGa1-xN)層的一多重交互堆疊結構。 The full-color LED display panel described in item 2 of the scope of patent application, wherein the elongated active layer forms a multiple quantum between the elongated first semiconductor material layer and the elongated second semiconductor material layer The well structure, and the multiple quantum well structure is a multiple alternating stack structure of an undoped GaN layer and an indium gallium nitride (In x Ga 1-x N) layer. 如申請專利範圍第9項所述之全彩LED顯示面板板，其中，對應於該多重量子井結構包含彼此交互堆疊的多個所述未摻雜的氮化鎵層與多個所述氮化銦鎵層，該M×N個光轉換部包括：複數個紅光轉換部、複數個綠光轉換部以及複數個空轉換部。 The full-color LED display panel according to item 9 of the scope of patent application, wherein the multiple quantum well structure includes a plurality of the undoped gallium nitride layers and a plurality of the nitride layers alternately stacked with each other. Indium gallium layer, the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of green light conversion parts, and a plurality of empty conversion parts. 如申請專利範圍第3項所述之全彩LED顯示面板，其中，該長條狀主動層於該長條狀第一半導體材料層與該長條狀第二半導體材料層之間形成一個多重量子井結構，且該多重量子井結構為一氮化鋁鎵(AlxGa1-xN)層與一氮化銦鎵(InxGa1-xN)層的多重交互堆疊結構。 The full-color LED display panel described in item 3 of the scope of patent application, wherein the elongated active layer forms a multiple quantum between the elongated first semiconductor material layer and the elongated second semiconductor material layer The well structure, and the multiple quantum well structure is a multiple alternate stacked structure of an aluminum gallium nitride (Al x Ga 1-x N) layer and an indium gallium nitride (In x Ga 1-x N) layer. 如申請專利範圍第11項所述之全彩LED顯示面板，其中，對應於該多重量子井結構包含彼此交互堆疊的多個所述未摻雜的氮化鎵層與多個所述氮化銦鎵層，該M×N個光轉換部包括：複數個紅光轉換部、複數個綠光轉換部以及複數個藍光轉換部。 The full-color LED display panel described in claim 11, wherein the multiple quantum well structure includes a plurality of undoped gallium nitride layers and a plurality of indium nitride layers alternately stacked on each other. The gallium layer, the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of green light conversion parts, and a plurality of blue light conversion parts. 一種全彩LED顯示面板的製造方法，包括以下步驟：(1)提供具一第一表面與一第二表面的一雙面拋光透光基板；(2)依序形成一緩衝層、一第一半導體材料層、一主動層、以及一第二半導體材料層於該第一表面之上；(3)利用微影蝕刻技術和一第一光阻層製作出完全貫穿該第二半導體材料層、該主動層、以及部分蝕刻該第一半導體材料層之N個長條狀凹槽，進而利用該N個長條狀凹槽將該第二半導體材料層分割成M個長條狀第二半導體材料層，同時將該主動層分割成M個長條狀 主動層，之後去除該第一光阻層；(4)以一第二光阻層覆於該長條狀第二半導體材料層之上，且令各所述長條狀凹槽之側壁覆有該第二光阻層；(5)令各所述長條狀凹槽之中形成有M個第一導電層；(6)利用雷射切割技術對各個所述長條狀凹槽的底部進行切割，以於該雙面拋光透光基板的該第一表面之上製作出複數條切割道，進而利用該複數條切割道將該緩衝層分割成M個長條狀緩衝層，同時將該第一半導體材料層分割成M個長條狀第一半導體材料層；(7)令各所述長條狀第二半導體材料層之上形成有N個第三光阻層；(8)形成一絕緣層覆蓋該M個長條狀第二半導體材料層，且令該絕緣層填入該M個長條狀凹槽以及該複數個切割道之中；(9)去除M×N個所述第三光阻層，使得該絕緣層具有M×N個開口用以露出該第二半導體材料層；(10)以一第四光阻層覆於該覆蓋該絕緣層之上；(11)令M×N個第二導電層分別形成於該M×N個開口之中，接著去除該第四光阻層；以及(12)於該第二表面之上設置包括M×N個光轉換部的一光轉換單元，完成一背接觸式全彩LED顯示面板之製作。 A method for manufacturing a full-color LED display panel includes the following steps: (1) providing a double-sided polished light-transmitting substrate with a first surface and a second surface; (2) sequentially forming a buffer layer and a first surface A semiconductor material layer, an active layer, and a second semiconductor material layer are on the first surface; (3) The second semiconductor material layer, the second semiconductor material layer, the second semiconductor material layer, and the The active layer and partly etch the N elongated grooves of the first semiconductor material layer, and then use the N elongated grooves to divide the second semiconductor material layer into M elongated second semiconductor material layers , And divide the active layer into M long strips at the same time The active layer, and then the first photoresist layer is removed; (4) a second photoresist layer is used to cover the elongated second semiconductor material layer, and the sidewalls of each of the elongated grooves are covered with The second photoresist layer; (5) M first conductive layers are formed in each of the elongated grooves; (6) The bottom of each of the elongated grooves is subjected to laser cutting technology Cutting to form a plurality of cutting lanes on the first surface of the double-sided polished and translucent substrate, and then using the plurality of cutting lanes to divide the buffer layer into M elongated buffer layers, and at the same time the first surface A semiconductor material layer is divided into M elongated first semiconductor material layers; (7) N third photoresist layers are formed on each of the elongated second semiconductor material layers; (8) an insulating layer is formed The layer covers the M long strip-shaped second semiconductor material layers, and the insulating layer is filled into the M long strip-shaped grooves and the plurality of dicing channels; (9) removing the M×N third A photoresist layer such that the insulating layer has M×N openings for exposing the second semiconductor material layer; (10) A fourth photoresist layer is used to cover the insulating layer; (11) M× N second conductive layers are respectively formed in the M×N openings, and then the fourth photoresist layer is removed; and (12) a light including M×N light conversion parts is disposed on the second surface The conversion unit completes the production of a back-contact full-color LED display panel. 如申請專利範圍第13項所述之全彩LED顯示面板的製 造方法，其中，排列在同一列的N個所述第一導電層同時被連接至一條第一橋接導線，且M條所述第一橋接導線各設有一第一共電極。 The manufacturing of full-color LED display panel as described in item 13 of the scope of patent application The manufacturing method, wherein the N first conductive layers arranged in the same row are simultaneously connected to a first bridging wire, and each of the M first bridging wires is provided with a first common electrode. 如申請專利範圍第14項所述之全彩LED顯示面板的製造方法，其中，該光轉換單元包括：一透光基板；一遮光層，形成於該透光基板的一設置面之上，且由一遮光材料製成；複數個第一穿孔，形成於該遮光層之上，且該複數個第一穿孔共排列成M/3行及N/3列；其中，各所述第一穿孔與該透光基板的該設置面一同組成一第一容置槽；複數個第二穿孔，形成於該遮光層之上，且該複數個第二穿孔共排列成M/3行及N/3列；其中，各所述第二穿孔與該透光基板的該設置面一同組成一第二容置槽；以及複數個第三穿孔，形成於該遮光層之上，且該複數個第三穿孔共排列成M/3行及N/3列；其中，各所述第三穿孔與該透光基板的該設置面一同組成一第三容置槽；其中，一紅光量子點材料係填充在各所述第一容置槽之中，且一綠光量子點材料係填充在各所述第二容置槽之中。 According to the method for manufacturing a full-color LED display panel as described in item 14 of the scope of patent application, the light conversion unit includes: a light-transmitting substrate; a light-shielding layer formed on a setting surface of the light-transmitting substrate, and It is made of a light-shielding material; a plurality of first perforations are formed on the light-shielding layer, and the plurality of first perforations are arranged in M/3 rows and N/3 columns; wherein, each of the first perforations and The arrangement surface of the light-transmitting substrate together constitutes a first accommodating groove; a plurality of second perforations are formed on the light shielding layer, and the plurality of second perforations are arranged in M/3 rows and N/3 columns. Wherein, each of the second through holes and the set surface of the light-transmitting substrate together form a second accommodating groove; and a plurality of third through holes are formed on the light-shielding layer, and the plurality of third through holes are in total Arranged in M/3 rows and N/3 columns; wherein each of the third through holes and the arrangement surface of the light-transmitting substrate together form a third accommodating groove; wherein, a red light quantum dot material is filled in each In the first accommodating groove, a green light quantum dot material is filled in each of the second accommodating grooves. 如申請專利範圍第15項所述之全彩LED顯示面板的製 造方法，其中，一藍光量子點材料係填充在各所述第三容置槽之中。 The manufacturing of full-color LED display panels as described in item 15 of the scope of patent application The manufacturing method, wherein a blue quantum dot material is filled in each of the third accommodating grooves. 如申請專利範圍第13項所述之全彩LED顯示面板的製造方法，其中，所述全彩LED顯示面板與一驅動電路模組組合成一全彩LED顯示裝置，該驅動電路模組具有M個第一接點用以分別與該M個第一共電極電性連接，且該驅動電路模組還具有M×N個第二接點用以分別與該M×N個第二導電層電性連接。 The manufacturing method of a full-color LED display panel as described in item 13 of the scope of patent application, wherein the full-color LED display panel and a driving circuit module are combined to form a full-color LED display device, and the driving circuit module has M The first contacts are used for electrically connecting with the M first common electrodes, and the driving circuit module also has M×N second contacts for electrically connecting with the M×N second conductive layers, respectively connection. 如申請專利範圍第13項所述之全彩LED顯示面板的製造方法，其中，該雙面拋光透光基板可為下列任一者：雙面拋光藍寶石基板、雙面拋光尖晶石基板、雙面拋光碳化矽基板、雙面拋光玻璃基板、或雙面拋光石英基板。 The manufacturing method of a full-color LED display panel as described in item 13 of the scope of patent application, wherein the double-sided polished light-transmitting substrate can be any of the following: double-sided polished sapphire substrate, double-sided polished spinel substrate, double Surface polished silicon carbide substrate, double-sided polished glass substrate, or double-sided polished quartz substrate. 如申請專利範圍第13項所述之全彩LED顯示面板的製造方法，其中，該絕緣層的製程材料為一遮光材料，且該緩衝層的製造材料可為下列任一者：未摻雜的氮化鎵(undoped GaN)、氮化鋁(AlN)、或氧化鋅(ZnO)。 The manufacturing method of a full-color LED display panel as described in the scope of patent application, wherein the process material of the insulating layer is a light-shielding material, and the manufacturing material of the buffer layer can be any of the following: undoped Gallium nitride (undoped GaN), aluminum nitride (AlN), or zinc oxide (ZnO). 如申請專利範圍第15項所述之全彩LED顯示面板的製造方法，其中，該長條狀第一半導體材料層之製造材料為N型氮化鎵(n-type gallium nitride,n-GaN)，且所述長條狀第 二半導體材料層之製造材料為P型氮化鎵(p-type gallium nitride,p-GaN)。 According to the method for manufacturing a full-color LED display panel as described in item 15 of the scope of patent application, the manufacturing material of the elongated first semiconductor material layer is n-type gallium nitride (n-GaN) , And the long strip The manufacturing material of the two semiconductor material layers is p-type gallium nitride (p-GaN). 如申請專利範圍第15項所述之全彩LED顯示面板的製造方法，其中，該長條狀主動層於該長條狀第一半導體材料層與該長條狀第二半導體材料層之間形成一個多重量子井結構，且該多重量子井結構為一未摻雜的氮化鎵(undoped GaN)層與一氮化銦鎵(InxGa1-xN)層的一多重交互堆疊結構。 The method for manufacturing a full-color LED display panel as described in the scope of patent application, wherein the elongated active layer is formed between the elongated first semiconductor material layer and the elongated second semiconductor material layer A multiple quantum well structure, and the multiple quantum well structure is an undoped gallium nitride (undoped GaN) layer and an indium gallium nitride (In x Ga 1-x N) layer in a multiple alternate stack structure. 如申請專利範圍第21項所述之全彩LED顯示面板的製造方法，其中，對應於該多重量子井結構包含彼此交互堆疊的多個所述未摻雜的氮化鎵層與多個所述氮化銦鎵層，該M×N個光轉換部包括：複數個紅光轉換部、複數個綠光轉換部以及複數個空轉換部。 According to the method for manufacturing a full-color LED display panel described in item 21 of the scope of patent application, wherein the multiple quantum well structure includes a plurality of undoped gallium nitride layers and a plurality of said undoped gallium nitride layers alternately stacked with each other corresponding to the multiple quantum well structure. Indium gallium nitride layer, the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of green light conversion parts, and a plurality of empty conversion parts. 如申請專利範圍第15項所述之全彩LED顯示面板的製造方法，其中，該長條狀主動層於該長條狀第一半導體材料層與該長條狀第二半導體材料層之間形成一個多重量子井結構，且該多重量子井結構為一氮化鋁鎵(AlxGa1-xN)層與一氮化銦鎵(InxGa1-xN)層的多重交互堆疊結構。 The method for manufacturing a full-color LED display panel as described in the scope of patent application, wherein the elongated active layer is formed between the elongated first semiconductor material layer and the elongated second semiconductor material layer A multiple quantum well structure, and the multiple quantum well structure is a multiple alternate stacked structure of an aluminum gallium nitride (AlxGa1-xN) layer and an indium gallium nitride (InxGa1-xN) layer. 如申請專利範圍第23項所述之全彩LED顯示面板的製造方法，其中，對應於該多重量子井結構包含彼此交互堆 疊的多個所述未摻雜的氮化鎵層與多個所述氮化銦鎵層，該M×N個光轉換部包括：複數個紅光轉換部、複數個綠光轉換部以及複數個藍光轉換部。 The method for manufacturing a full-color LED display panel as described in item 23 of the scope of patent application, wherein, corresponding to the multiple quantum well structure includes mutual stacking A plurality of the undoped gallium nitride layers and a plurality of the indium gallium nitride layers are stacked, and the M×N light conversion parts include: a plurality of red light conversion parts, a plurality of green light conversion parts, and a plurality of A Blu-ray conversion department.
TW108138613A 2019-10-25 2019-10-25 Full color led display panel using isolation lines of laser scribing and manufacturing method thereof TWI730472B (en)

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