TWI728855B - Wet processing equipment for porous substrate - Google Patents
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本揭示是關於一種濕式處理設備,特別是關於一種用於多孔性基板之濕式處理設備。The present disclosure relates to a wet processing equipment, in particular to a wet processing equipment for porous substrates.
隨著半導體元件整合技術的持續發展,半導體基板已不再只是傳統的二維結構,而是採用三維結構且存在有多樣性的變化。舉例來說,現今的半導體基板可能包含有島狀結構或者是具有複數個通孔圖案。再者,傳統的濕式處理設備主要是採用高壓沖洗或浸泡的方式進行基板的蝕刻或清洗等處理。然而,當使用高壓沖洗或浸泡方式來清洗蝕刻處理具有複數個通孔圖案之基板,容易造成基板損傷、破裂、或基板之清洗蝕刻處理不完全。因此,隨著半導體基板的結構改變,傳統濕式處理設備已無法滿足目前製造上之需求。With the continuous development of semiconductor device integration technology, the semiconductor substrate is no longer just a traditional two-dimensional structure, but a three-dimensional structure with diverse changes. For example, today's semiconductor substrates may include island structures or have multiple via patterns. Furthermore, the traditional wet processing equipment mainly uses high-pressure washing or soaking to perform processing such as etching or cleaning of the substrate. However, when a high-pressure washing or immersion method is used to clean and etch a substrate with a plurality of through hole patterns, it is easy to cause damage, cracks, or incomplete cleaning and etching of the substrate. Therefore, as the structure of the semiconductor substrate changes, the traditional wet processing equipment can no longer meet the current manufacturing requirements.
有鑑於此,有必要提出一種用於多孔性基板之濕式處理設備,以解決習知技術中存在的問題。In view of this, it is necessary to provide a wet processing equipment for porous substrates to solve the problems in the prior art.
為解決上述習知技術之問題,本揭示之目的在於提供一種用於多孔性基板之濕式處理設備,藉由在旋轉件的內部設置管路,使得施加在多孔性基板上的製程液體可順利地通過多孔性基板的複數個通孔,並且藉由重力或抽取力將製程液體向下導引進入管路中,如此可確保製程液體能穿過基板的每一個通孔,並且避免對基板表面施加過大壓力。In order to solve the above-mentioned problems of the conventional technology, the purpose of the present disclosure is to provide a wet processing equipment for porous substrates. By arranging a pipeline inside the rotating member, the process liquid applied on the porous substrate can be smoothly applied. The ground passes through the multiple through holes of the porous substrate, and the process liquid is guided downwards into the pipeline by gravity or extraction force. This can ensure that the process liquid can pass through each through hole of the substrate and avoid contacting the surface of the substrate. Excessive pressure is applied.
為達成上述目的,本揭示提供一種多孔性基板之濕式處理設備,包含:一旋轉裝置和一液體供應裝置。旋轉裝置包含一承載台、一旋轉件、一管路、和至少一排液管。承載台配置為將一多孔性基板保持於其上。旋轉件與該承載台連接,配置為帶動該承載台繞著一旋轉軸旋轉。管路設置在該旋轉件內部,包含一進液口和複數個排出口,其中該進液口面對該承載台,以及該複數個排出口環繞地設置在相同的水平高度。至少一排液管與該旋轉件相鄰。液體供應裝置設置在該旋轉裝置之該承載台的上方,配置為對該多孔性基板施加一製程液體,其中該製程液體依序經由該管路和該排液管而被排出至該旋轉裝置之外部。In order to achieve the above objective, the present disclosure provides a porous substrate wet processing equipment, including: a rotating device and a liquid supply device. The rotating device includes a carrying platform, a rotating part, a pipeline, and at least one drain pipe. The carrier is configured to hold a porous substrate thereon. The rotating member is connected with the bearing platform and is configured to drive the bearing platform to rotate around a rotating shaft. The pipeline is arranged inside the rotating member and includes a liquid inlet and a plurality of discharge outlets, wherein the liquid inlet faces the bearing platform, and the plurality of discharge outlets are circumferentially arranged at the same level. At least one drain pipe is adjacent to the rotating member. The liquid supply device is arranged above the carrying table of the rotating device and is configured to apply a process liquid to the porous substrate, wherein the process liquid is discharged to the rotating device through the pipeline and the drain pipe in sequence external.
於本揭示其中之一較佳實施例當中,該管路包含一主管路和複數個分支管路,其中該主管路從該進液口縱向延伸至該旋轉件內部且終止於該旋轉件內部之第一位置,以及該複數個分支管路從該第一位置分別朝不同方向橫向延伸並且終止於對應的該排出口。In one of the preferred embodiments of the present disclosure, the pipeline includes a main pipe and a plurality of branch pipes, wherein the main pipe extends longitudinally from the liquid inlet to the inside of the rotating member and terminates at the inside of the rotating member The first position and the plurality of branch pipelines respectively extend laterally in different directions from the first position and terminate at the corresponding discharge port.
於本揭示其中之一較佳實施例當中,該旋轉裝置還包含一腔體外殼(Chamber Case),經由動態軸封(Dynamic Shaft Seal)與該旋轉裝置的該旋轉件作緊密連接。In one of the preferred embodiments of the present disclosure, the rotating device further includes a chamber case, which is tightly connected to the rotating member of the rotating device through a dynamic shaft seal (Dynamic Shaft Seal).
於本揭示其中之一較佳實施例當中,該濕式處理設備還包含一腔體,設置在該腔體外殼與該旋轉件之間,並且與該管路和該至少一排液管連通,使得該製程液體經由該管路之該複數個排出口排出至該腔體,並且該至少一排液管將該腔體內之該製程液體排出至外部。In one of the preferred embodiments of the present disclosure, the wet processing equipment further includes a cavity, which is arranged between the cavity housing and the rotating part, and communicates with the pipeline and the at least one drain pipe, The process liquid is discharged to the cavity through the plurality of discharge ports of the pipeline, and the at least one discharge pipe discharges the process liquid in the cavity to the outside.
於本揭示其中之一較佳實施例當中,該旋轉裝置之該旋轉件包含一內層結構和一外層結構,且該外層結構包覆該內層結構,以及該管路設置在該內層結構。In one of the preferred embodiments of the present disclosure, the rotating member of the rotating device includes an inner layer structure and an outer layer structure, and the outer layer structure covers the inner layer structure, and the pipeline is arranged on the inner layer structure .
於本揭示其中之一較佳實施例當中,該外層結構之強度大於該內層結構之強度。In one of the preferred embodiments of the present disclosure, the strength of the outer structure is greater than the strength of the inner structure.
於本揭示其中之一較佳實施例當中,該內層結構採用耐侵蝕之塑膠材料,以及該外層結構採用高強度耐腐蝕之金屬材料。In one of the preferred embodiments of the present disclosure, the inner layer structure is made of corrosion-resistant plastic materials, and the outer layer structure is made of high-strength, corrosion-resistant metal materials.
於本揭示其中之一較佳實施例當中,該旋轉裝置還包含至少一支柱,從該外層結構之表面延伸穿過該內層結構之內部。In one of the preferred embodiments of the present disclosure, the rotating device further includes at least one pillar extending from the surface of the outer structure through the interior of the inner structure.
於本揭示其中之一較佳實施例當中,該旋轉裝置還包含一馬達,該馬達連接該旋轉件並傳動該旋轉件旋轉。In one of the preferred embodiments of the present disclosure, the rotating device further includes a motor connected to the rotating member and driving the rotating member to rotate.
於本揭示其中之一較佳實施例當中,該旋轉裝置還包含一回收裝置,通過該至少一排液管與該旋轉裝置連接。In one of the preferred embodiments of the present disclosure, the rotating device further includes a recovery device connected to the rotating device through the at least one drain pipe.
相較於先前技術,本揭示藉由旋轉裝置支撐多孔性基板的背面以防止基板破裂、彎折。並且,藉由液體供應裝置精確地控制製程液體的噴灑方向與壓力,使製程液體能穿過多孔性基板的各通孔圖案,以確實清洗蝕刻多孔性基板的各個通孔。Compared with the prior art, the present disclosure uses a rotating device to support the back surface of the porous substrate to prevent the substrate from cracking and bending. In addition, the spraying direction and pressure of the process liquid are precisely controlled by the liquid supply device, so that the process liquid can pass through the through hole patterns of the porous substrate, so as to surely clean and etch the through holes of the porous substrate.
為了讓本揭示之上述及其他目的、特徵、優點能更明顯易懂,下文將特舉本揭示較佳實施例,並配合所附圖式,作詳細說明如下。In order to make the above and other objectives, features, and advantages of the present disclosure more comprehensible, preferred embodiments of the present disclosure will be described in detail below in conjunction with the accompanying drawings.
請參照第1圖,其顯示本揭示之較佳實施例之濕式處理設備1之示意圖。較佳地,濕式處理設備1是用於對多孔性基板2進行蝕刻或清洗等各種濕式處理。多孔性基板2為包含複數個通孔(through hole)3的基板2,且該複數個通孔3的設置位置或尺寸可為規則或不規則。如第1圖所示,濕式處理設備1包含液體供應裝置10、旋轉裝置20、回收裝置30。旋轉裝置20用於放置多孔性基板2。液體供應裝置10設置在旋轉裝置20之承載台21的上方,用於對多孔性基板2施加一製程液體。回收裝置30與旋轉裝置20連接,用於收集使用後的製程液體並將其儲放在儲存槽中,並且可對回收的製程液體進行進一步處理,例如過濾、氣液分離等。Please refer to FIG. 1, which shows a schematic diagram of the wet processing equipment 1 of the preferred embodiment of the present disclosure. Preferably, the wet processing equipment 1 is used for various wet processing such as etching or cleaning of the
請參照第2圖,其顯示第1圖之濕式處理設備1之旋轉裝置20之剖面圖。旋轉裝置20包含承載台21、旋轉件22、管路23、腔體外殼25、和兩個排液管26。承載台21藉由固定件將多孔性基板2保持於其上,其中固定件包含夾具、真空吸盤等。旋轉件22與承載台21和馬達27連接,其中馬達27控制旋轉件22轉動,並且旋轉件22連帶地帶動承載台21繞著旋轉軸旋轉。管路23具體為一抽取氣體和液體的管路,其設置在旋轉件22內部,包含一進液口233和複數個排出口234。其中進液口233設置於旋轉件22的上表面,並且面對承載台21。複數個排出口234形成在旋轉件22的側表面,並且環繞地設置在相同的水平高度。腔體外殼25藉由動態軸封251與旋轉裝置20緊密連接,並且環繞在複數個排出口234的周圍,在腔體外殼25與旋轉件22之間定義一腔體24。兩個排液管26分別與旋轉件22的複數個排出口234對應設置。具體來說,管路23和兩個排液管26藉由腔體24而互相連通。也就是說,清洗蝕刻後之製程液體或氣液混合物匯流至旋轉裝置20的管路23內,並且經由管路23之複數個排出口234排至腔體24。也就是說,腔體24是作為氣體與液體的收集腔體。接著,兩個排液管26將腔體24內之製程液體排送至位於旋轉裝置20外部的回收裝置30。應當理解的是,排液管26的數量可根據實際需求而進行改變,惟不侷限於此。Please refer to FIG. 2, which shows a cross-sectional view of the rotating
如第2圖所示,管路23包含一主管路231和複數個分支管路232。主管路231從進液口233以平行於旋轉軸的方向縱向延伸至旋轉件22內部且終止於旋轉件22內部之第一位置P1。複數個分支管路232從第一位置P1分別朝不同方向橫向延伸並且終止於對應的排出口234。也就是說,排出口234等於分支管路232的數量。較佳地,分支管路232的延伸方向大致垂直於主管路231的延伸方向。藉此設置,進入主管路231的製程液體藉由旋轉而產生的離心力被傳送進入分支管路232,並且經由分支管路232排送至腔體24。在本實施例中,分支管路232的數量為四個,惟不限於此。As shown in FIG. 2, the
請參照第2圖和第3圖,其中第3圖顯示第2圖之旋轉件22之示意圖,旋轉裝置20之旋轉件22包含內層結構222、外層結構221、和複數個支柱223。外層結構221包覆一部分的內層結構222,以及管路23設置在內層結構222。由於內層結構222主要是用於傳輸製程液體,故內層結構222較佳地採用耐侵蝕性之塑膠材料,例如PEEK塑膠。另一方面,由於塑膠材料的強度難以承受旋轉的力道,因此藉由外層結構221和支柱223來增強旋轉件22的整體機械強度。具體來說,外層結構221和支柱223之材料的強度(例如材料的硬度)大於內層結構222之強度,舉例來說,外層結構221可採用高強度耐腐蝕之金屬材料,或不銹鋼材料。再者,支柱223是從外層結構221之表面延伸出而形成,並且支柱223穿過內層結構222之內部。在本揭示中,支柱223的數量較佳地對應於分支管路232的數量,並且每一支柱223分別設置在相鄰的兩個分支管路232之間。Please refer to FIGS. 2 and 3. FIG. 3 shows a schematic diagram of the rotating
綜上所述,本揭示藉由旋轉裝置支撐多孔性基板的背面以防止基板產生破裂、彎折。並且,藉由液體供應裝置精確地控制製程液體的噴灑方向與壓力,使製程液體能穿過多孔性基板的各個通孔圖案,以確實清洗蝕刻多孔性基板的各個通孔。接著,清洗蝕刻後之製程液體或其所夾帶的氣液混合物藉由旋轉裝置進行收集,並且經由旋轉裝置向下傳送到回收裝置,以進行後續的回收處理。In summary, the present disclosure uses a rotating device to support the back of the porous substrate to prevent the substrate from cracking and bending. In addition, the spraying direction and pressure of the process liquid are precisely controlled by the liquid supply device, so that the process liquid can pass through the through hole patterns of the porous substrate, so as to surely clean and etch the through holes of the porous substrate. Then, the process liquid after cleaning and etching or its entrained gas-liquid mixture is collected by the rotating device, and is conveyed down to the recovery device through the rotating device for subsequent recovery processing.
以上僅是本揭示的較佳實施方式,應當指出,對於所屬領域技術人員,在不脫離本揭示原理的前提下,還可以做出若干改進和潤飾,這些改進和潤飾也應視為本揭示的保護範圍。The above are only the preferred embodiments of the present disclosure. It should be pointed out that for those skilled in the art, without departing from the principles of the present disclosure, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the present disclosure. protected range.
1:濕式處理設備 2:多孔性基板 3:通孔 10:液體供應裝置 20:旋轉裝置 21:承載台 22:旋轉件 221:外層結構 222:內層結構 223:支柱 23:管路 231:主管路 232:分支管路 233:進液口 234:排出口 24:腔體 25:腔體外殼 251:動態軸封 26:排液管 27:馬達 30:回收裝置 P1:第一位置 1: Wet processing equipment 2: Porous substrate 3: Through hole 10: Liquid supply device 20: Rotating device 21: Bearing platform 22: Rotating parts 221: Outer Structure 222: inner structure 223: Pillar 23: Pipeline 231: Supervisor Road 232: branch pipeline 233: Liquid Inlet 234: Exhaust Outlet 24: cavity 25: Cavity shell 251: Dynamic shaft seal 26: Drain pipe 27: Motor 30: Recovery device P1: first position
第1圖顯示本揭示之較佳實施例之濕式處理設備之示意圖; 第2圖顯示第1圖之濕式處理設備之旋轉裝置之剖面圖;以及 第3圖顯示第2圖之旋轉件之示意圖。 Figure 1 shows a schematic diagram of a wet processing equipment according to a preferred embodiment of the present disclosure; Figure 2 shows a cross-sectional view of the rotating device of the wet processing equipment of Figure 1; and Figure 3 shows a schematic diagram of the rotating part of Figure 2.
20:旋轉裝置 20: Rotating device
21:承載台 21: Bearing platform
22:旋轉件 22: Rotating parts
221:外層結構 221: Outer Structure
222:內層結構 222: inner structure
23:管路 23: Pipeline
231:主管路 231: Supervisor Road
232:分支管路 232: branch pipeline
233:進液口 233: Liquid Inlet
234:排出口 234: Exhaust Outlet
24:腔體 24: cavity
25:腔體外殼 25: Cavity shell
251:動態軸封 251: Dynamic shaft seal
26:排液管 26: Drain pipe
27:馬達 27: Motor
P1:第一位置 P1: first position
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US20040040584A1 (en) * | 2002-08-29 | 2004-03-04 | Dainippon Screen Mfg. Co. Ltd. | Substrate processing apparatus and substrate processing method drying substrate |
TW200818283A (en) * | 2006-09-28 | 2008-04-16 | Dainippon Screen Mfg | Substrate processing apparatus and substrate processing method |
TW200952110A (en) * | 2008-04-04 | 2009-12-16 | Tokyo Electron Ltd | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
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US20040040584A1 (en) * | 2002-08-29 | 2004-03-04 | Dainippon Screen Mfg. Co. Ltd. | Substrate processing apparatus and substrate processing method drying substrate |
TW200818283A (en) * | 2006-09-28 | 2008-04-16 | Dainippon Screen Mfg | Substrate processing apparatus and substrate processing method |
TW200952110A (en) * | 2008-04-04 | 2009-12-16 | Tokyo Electron Ltd | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
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