TWI727582B - Laser annealing device for SiC substrate - Google Patents

Laser annealing device for SiC substrate Download PDF

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TWI727582B
TWI727582B TW108148441A TW108148441A TWI727582B TW I727582 B TWI727582 B TW I727582B TW 108148441 A TW108148441 A TW 108148441A TW 108148441 A TW108148441 A TW 108148441A TW I727582 B TWI727582 B TW I727582B
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TW202027128A (en
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周炯
周偉
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大陸商上海微電子裝備（集團）股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

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Abstract

一種SiC基底的雷射退火裝置，其特徵係其包含：雷射發射單元，設置為提供退火所需的雷射光源；雷射整形單元，設置為將前述雷射發射單元發射的雷射整形為矩形光斑，前述矩形光斑的掃描向的能量分佈呈梯形；掃描振鏡單元，設置為控制來自前述雷射整形單元的雷射光束以使前述雷射光束在待退火的SiC基底表面按預設掃描方式掃描；工件承載機構，設置為承載待退火的SiC基底；及主控制器，分別與前述雷射發射單元、前述雷射整形單元、前述掃描振鏡單元及前述工件承載機構電連接。 A SiC substrate laser annealing device, which is characterized in that it comprises: a laser emitting unit configured to provide a laser light source required for annealing; and a laser shaping unit configured to shape the laser emitted by the aforementioned laser emitting unit into Rectangular spot, the energy distribution in the scanning direction of the aforementioned rectangular spot is trapezoidal; the scanning galvanometer unit is configured to control the laser beam from the aforementioned laser shaping unit so that the aforementioned laser beam scans the surface of the SiC substrate to be annealed according to a preset Method scanning; a workpiece carrying mechanism configured to carry the SiC substrate to be annealed; and a main controller, respectively electrically connected with the aforementioned laser emitting unit, the aforementioned laser shaping unit, the aforementioned scanning galvanometer unit, and the aforementioned workpiece carrying mechanism.

Description

SiC基底的雷射退火裝置 Laser annealing device for SiC substrate

本發明關於雷射退火技術領域，例如關於一種SiC基底的雷射退火裝置。 The present invention relates to the technical field of laser annealing, for example, to a laser annealing device for a SiC substrate.

基於Si的絕緣柵雙極型電晶體(Insulated Gate Bipolar Transistor，IGBT)的工作電壓範圍為600V-6500V，600V以下的IGBT器件主要應用在消費電子領域；600V-1200V範圍的IGBT器件應用最廣，被純電動或混動汽車、電機控制器、家用電器及太陽能逆變器等採用；1200V以上的高規格IGBT被應用在電力設備、汽車電子、高鐵及動車中。 The operating voltage range of Si-based Insulated Gate Bipolar Transistor (IGBT) is 600V-6500V. IGBT devices below 600V are mainly used in the consumer electronics field; IGBT devices in the 600V-1200V range are the most widely used. Used by pure electric or hybrid vehicles, motor controllers, household appliances and solar inverters, etc.; high-spec IGBTs above 1200V are used in power equipment, automotive electronics, high-speed rail and motor vehicles.

然而隨著數萬伏高壓、高於500度的高溫、高頻及大功率等需求，性能逼近材料特性極限的Si-IGBT已無法勝任。SiC材料以3倍於矽的禁帶寬度、10倍於矽的臨界擊穿電場、2倍於矽的飽和漂移速度以及3倍於矽的熱導率等優良特性而得到迅速發展。SiC器件更適合高溫應用，相比Si-IGBT而言最佳工作電壓更高，最佳工作功率也更高，而相關技術中的Si-IGBT也不適合高頻領域。在可預見的未來，Si-IGBT的應用將逐漸被推往中電壓及低電壓及中低頻率的功率器件中，SiC器件將負責處理高電壓及高頻率的功率器件。 However, with the demands of tens of thousands of volts and high voltage, high temperature higher than 500 degrees, high frequency and high power, the Si-IGBT whose performance is approaching the limit of material characteristics is no longer competent. SiC materials have developed rapidly with excellent characteristics such as 3 times the band gap of silicon, 10 times the critical breakdown electric field of silicon, 2 times the saturation drift speed of silicon, and 3 times the thermal conductivity of silicon. SiC devices are more suitable for high-temperature applications. Compared with Si-IGBTs, the optimal operating voltage is higher and the optimal operating power is also higher. Si-IGBTs in related technologies are not suitable for high-frequency applications. In the foreseeable future, the application of Si-IGBT will gradually be pushed to the power devices of medium voltage and low voltage and low frequency. SiC devices will be responsible for handling high voltage and high frequency power devices.

SiC基底雷射退火是藉由雷射光束照射SiC基底表面，使SiC基底表面的金屬沉積層與SiC基底形成歐姆接觸。相關技術中通常採用圓形小光斑，在退火時，藉由控制預設重疊率，來實現表面歐姆接觸退火。該圓形光斑能量通常沿徑向呈高斯分佈，能量分佈不均勻，導致退火不均勻。 Laser annealing of SiC substrate is to irradiate the surface of the SiC substrate with a laser beam to make the metal deposition layer on the surface of the SiC substrate form an ohmic contact with the SiC substrate. In the related art, a small circular spot is usually used, and during annealing, the surface ohmic contact annealing is realized by controlling the preset overlap ratio. The energy of the circular spot usually presents a Gaussian distribution along the radial direction, and the energy distribution is uneven, resulting in uneven annealing.

一實施例提供一種SiC基底的雷射退火裝置，包含： An embodiment provides a laser annealing device for a SiC substrate, including:

雷射發射單元，設置為提供退火所需的雷射光源； The laser emitting unit is set to provide the laser light source required for annealing;

雷射整形單元，設置為將前述雷射發射單元發射的雷射整形為矩形光斑，前述矩形光斑的沿掃描向的能量分佈呈梯形； The laser shaping unit is configured to shape the laser emitted by the aforementioned laser emitting unit into a rectangular spot, and the energy distribution of the aforementioned rectangular spot along the scanning direction is trapezoidal;

掃描振鏡單元，設置為控制來自前述雷射整形單元的雷射光束以使前述雷射光束在待退火的SiC基底表面按預設掃描方式掃描； The scanning galvanometer unit is configured to control the laser beam from the laser shaping unit so that the laser beam scans the surface of the SiC substrate to be annealed in a preset scanning manner;

工件承載機構，設置為承載待退火的SiC基底；及 The workpiece carrying mechanism is arranged to carry the SiC substrate to be annealed; and

主控制器，分別與前述雷射發射單元、前述雷射整形單元、前述掃描振鏡單元及前述工件承載機構電連接。 The main controller is respectively electrically connected with the aforementioned laser emitting unit, the aforementioned laser shaping unit, the aforementioned scanning galvanometer unit and the aforementioned workpiece carrying mechanism.

本發明提供一種SiC基底的雷射退火裝置，能夠提高雷射光斑的能量分佈均勻性，提高退火均勻性。 The invention provides a laser annealing device for a SiC substrate, which can improve the energy distribution uniformity of the laser spot and improve the annealing uniformity.

100‧‧‧雷射發射單元 100‧‧‧Laser launch unit

101‧‧‧雷射器 101‧‧‧Laser

102‧‧‧起偏器 102‧‧‧Polarizer

103‧‧‧雷射控制器 103‧‧‧Laser Controller

104‧‧‧分光鏡 104‧‧‧Splitter

105‧‧‧雷射能量採集器 105‧‧‧Laser Energy Harvester

106‧‧‧溫度控制及保護器 106‧‧‧Temperature control and protector

200‧‧‧雷射整形單元 200‧‧‧Laser shaping unit

201‧‧‧準直器 201‧‧‧Collimator

202‧‧‧擴束器 202‧‧‧Beam Expander

203‧‧‧衍射光學元件 203‧‧‧Diffractive optical element

300‧‧‧掃描振鏡單元 300‧‧‧Scanning galvanometer unit

301‧‧‧掃描振鏡 301‧‧‧Scanning galvanometer

302‧‧‧聚焦透鏡 302‧‧‧Focusing lens

400‧‧‧工件承載機構 400‧‧‧Workpiece Carrying Mechanism

500‧‧‧主控制器 500‧‧‧Main Controller

600‧‧‧快門元件 600‧‧‧Shutter element

701‧‧‧反光鏡 701‧‧‧Mirror

702‧‧‧反光鏡 702‧‧‧Mirror

800‧‧‧外部參數輸入控制器 800‧‧‧External parameter input controller

3011‧‧‧X軸掃描振鏡 3011‧‧‧X-axis scanning galvanometer

3012‧‧‧Y軸掃描振鏡 3012‧‧‧Y-axis scanning galvanometer

A1‧‧‧光斑沿步進向的能量分佈曲線 A1‧‧‧Energy distribution curve of the spot along the stepping direction

A2、A3‧‧‧光斑步進向的能量分佈曲線 A2, A3‧‧‧Energy distribution curve in the step direction of the spot

B1‧‧‧光斑沿掃描向的能量分佈曲線 B1‧‧‧The energy distribution curve of the spot along the scanning direction

B2、B3‧‧‧光斑掃描向的能量分佈曲線 B2, B3‧‧‧Energy distribution curve in the scanning direction of the spot

C1、C2、C3‧‧‧光斑形貌圖 C1, C2, C3‧‧‧Spot Topography

【圖1】為相關技術中一種雷射光斑的形貌示意圖。 [Figure 1] is a schematic diagram of the morphology of a laser spot in the related technology.

【圖2】為一實施例提供的一種SiC基底的雷射退火裝置的結構示意圖。 [Fig. 2] is a schematic structural diagram of a laser annealing device for SiC substrate provided by an embodiment.

【圖3】為一實施例中經雷射整形後的一種雷射光斑的形貌示意圖。 [Fig. 3] is a schematic diagram of the morphology of a laser spot after laser shaping in an embodiment.

【圖4】為一實施例中經雷射整形後的另一種雷射光斑的形貌示意圖。 [Fig. 4] is a schematic diagram of the morphology of another laser spot after laser shaping in an embodiment.

【圖5】為光強與退火半徑的關係曲線圖。 [Figure 5] is a graph of the relationship between light intensity and annealing radius.

在本發明的描述中，除非另有明確的規定及限定，術語「相連」、「連接」及「固定」應做廣義理解，例如，可以是固定連接，也可以是可拆卸連接，或成一體；可以是機械連接，也可以是電連接；可以是直接相連，也可以藉由中間媒介間接相連，可以是兩個元件內部的連通或兩個元件的相互作用關係。對於所屬技術領域中具有通常知識者，可以具體情況理解上述術語在本發明中的具體含義。 In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected" and "fixed" should be interpreted broadly. For example, they may be fixedly connected, detachably connected, or integrated. ; It can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two components or the interaction relationship between two components. Those with general knowledge in the technical field can understand the specific meanings of the above terms in the present invention under specific circumstances.

在本發明中，除非另有明確的規定及限定，第一特徵在第二特徵之「上」或之「下」可以包含第一特徵及第二特徵直接接觸，也可以包含第一特徵及第二特徵不是直接接觸而是藉由它們之間的另外的特徵接觸。而且，第一特徵在第二特徵「之上」、「上方」及「上面」包含第一特徵在第二特徵正上方及斜上方，或僅僅表示第一特徵的水平高度高於第二特徵的水平高度。第一特徵在第二特徵「之下」、「下方」及「下面」包含第一特徵在第二特徵正下方及斜下方，或僅僅表示第一特徵的水平高度小於第二特徵水平高度。 In the present invention, unless expressly stipulated and limited otherwise, the "upper" or "lower" of the first feature of the second feature may include the first feature and the second feature in direct contact, or may include the first feature and the second feature. The two features are not in direct contact but by another feature between them. Moreover, the first feature "above", "above" and "above" the second feature include the first feature directly above and obliquely above the second feature, or only the level of the first feature is higher than the second feature Horizontal height. The first feature "below", "below" and "below" the second feature includes the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is less than the level of the second feature.

相關技術中，其中一種手段是將光斑整形為線性光斑，光斑步進向的長度遠大於掃描向的長度，以提高退火效率，圖1為相關技術中一種雷射光斑的形貌示意圖，如圖1所示，C1為光斑形貌圖，曲線A1為光斑沿步進 向的能量分佈曲線，光斑沿步進向的能量呈嚴格的90°平頂高斯Top-Flat分佈，步進向能量分佈具有陡峭的邊緣。曲線B1為光斑沿掃描向的能量分佈曲線，由於掃描向的寬度較窄，光斑沿掃描向的能量難以實現呈嚴格的90°平頂高斯Top-Flat分佈，光斑沿掃描向的能量呈高斯分佈，該手段雖然能夠提高退火效率，但光斑掃描向能量分佈不均勻，導致退火不均勻。 In the related art, one of the methods is to shape the light spot into a linear light spot. The length of the light spot in the step direction is much larger than the length in the scan direction to improve the annealing efficiency. Figure 1 is a schematic diagram of the topography of a laser spot in the related technology, as shown in the figure. As shown in 1, C1 is the topography of the spot, and curve A1 is the step along the spot For the energy distribution curve in the step direction, the energy of the spot along the step direction is strictly 90° flat-top Gaussian Top-Flat distribution, and the step direction energy distribution has a steep edge. Curve B1 is the energy distribution curve of the light spot along the scanning direction. Due to the narrow width of the scanning direction, the energy of the light spot along the scanning direction is difficult to achieve a strict 90° flat top Gaussian Top-Flat distribution, and the energy of the light spot along the scanning direction is Gaussian. Although this method can improve the annealing efficiency, the energy distribution in the scanning direction of the light spot is uneven, resulting in uneven annealing.

本實施例提供一種SiC基底的雷射退火裝置，圖2為本實施例提供的一種SiC基底的雷射退火裝置的結構示意圖，如圖2所示，該退火裝置包含雷射發射單元100、雷射整形單元200、掃描振鏡單元300、工件承載機構400及主控制器500，雷射發射單元100、雷射整形單元200、掃描振鏡單元300及工件承載機構400沿雷射光路傳播方向依次佈置。其中，雷射發射單元100設置為提供退火所需的雷射光源；雷射整形單元200設置為將雷射發射單元100發射的雷射整形為矩形光斑，矩形光斑的掃描向的能量分佈呈梯形；掃描振鏡單元300設置為控制來自雷射整形單元200的雷射光束，使雷射整形單元200的雷射光束在待退火的SiC基底表面按預設掃描方式掃描；工件承載機構400設置為承載待退火的SiC基底；主控制器500分別與雷射發射單元100、雷射整形單元200、掃描振鏡單元300及工件承載機構400電連接，且設置為控制雷射發射單元100、雷射整形單元200及掃描振鏡單元300工作，以及在退火前控制工件承載機構400移動到退火工位。 This embodiment provides a laser annealing device for a SiC substrate. FIG. 2 is a schematic structural diagram of a laser annealing device for a SiC substrate provided by this embodiment. As shown in FIG. 2, the annealing device includes a laser emitting unit 100, a laser The laser shaping unit 200, the scanning galvanometer unit 300, the workpiece carrying mechanism 400, and the main controller 500, the laser emitting unit 100, the laser shaping unit 200, the scanning galvanometer unit 300, and the workpiece carrying mechanism 400 are in sequence along the propagation direction of the laser light path Layout. Wherein, the laser emitting unit 100 is configured to provide a laser light source required for annealing; the laser shaping unit 200 is configured to shape the laser emitted by the laser emitting unit 100 into a rectangular spot, and the energy distribution in the scanning direction of the rectangular spot is trapezoidal. The scanning galvanometer unit 300 is set to control the laser beam from the laser shaping unit 200, so that the laser beam of the laser shaping unit 200 scans the surface of the SiC substrate to be annealed in a preset scanning mode; the workpiece carrying mechanism 400 is set to Carrying the SiC substrate to be annealed; the main controller 500 is electrically connected to the laser emitting unit 100, the laser shaping unit 200, the scanning galvanometer unit 300, and the workpiece carrying mechanism 400, and is set to control the laser emitting unit 100, the laser The shaping unit 200 and the scanning galvanometer unit 300 work, and the workpiece carrying mechanism 400 is controlled to move to the annealing station before annealing.

圖3為本實施例中經雷射整形後的一種雷射光斑的形貌示意圖，如圖3所示，C2為該光斑的形貌圖，A2為光斑步進向的能量分佈曲線，B2為光斑掃描向的能量分佈曲線，藉由雷射整形單元200將雷射發射單元100發射的雷射整形為矩形光斑，掃描向(Y向)長度為與步進向(X向)長度相 當，光斑形貌大致呈方形，方形光斑增大光斑掃描向的長度，有利於光斑掃描向的能量分佈的調整。圖4為本實施例中經雷射整形後的另一種雷射光斑的形貌示意圖，如圖4所示，C3為該光斑的形貌圖，A3為光斑步進向的能量分佈曲線，B3為光斑掃描向的能量分佈曲線，藉由雷射整形單元200將雷射發射單元100發射的雷射整形為矩形光斑，掃描向(Y向)長度為0.4mm，步進向(X向)長度為3.6mm，矩形光斑的掃描向的能量分佈呈梯形，長方形的光斑增大單次掃描時掃過的面積，有利於提高退火效率。相對於相關技術中掃描向呈高斯分佈的光斑，掃描向能量呈梯形分佈提高光斑掃描向的能量分佈均勻性，進而提高退火均勻性。 Figure 3 is a schematic diagram of the morphology of a laser spot after laser shaping in this embodiment. As shown in Figure 3, C2 is the topography of the spot, A2 is the energy distribution curve in the step direction of the spot, and B2 is The energy distribution curve in the scanning direction of the spot. The laser shaping unit 200 is used to shape the laser emitted by the laser emitting unit 100 into a rectangular spot. The length of the scanning direction (Y direction) is the same as the length of the step direction (X direction). When the shape of the light spot is roughly square, the square light spot increases the length of the light spot in the scanning direction, which is beneficial to the adjustment of the energy distribution in the light spot scanning direction. Figure 4 is a schematic diagram of the morphology of another laser spot after laser shaping in this embodiment. As shown in Figure 4, C3 is the topography of the spot, A3 is the energy distribution curve in the step direction of the spot, and B3 Is the energy distribution curve in the scanning direction of the spot. The laser shaping unit 200 is used to shape the laser emitted by the laser emitting unit 100 into a rectangular spot. The length in the scanning direction (Y direction) is 0.4mm, and the length in the step direction (X direction) At 3.6mm, the energy distribution in the scanning direction of the rectangular spot is trapezoidal, and the rectangular spot increases the area swept in a single scan, which is beneficial to improve the annealing efficiency. Compared with the beam spot with the Gaussian distribution in the scanning direction in the related art, the energy distribution in the scanning direction is trapezoidal to improve the uniformity of the energy distribution in the scanning direction of the spot, thereby improving the annealing uniformity.

在本實施例中，矩形光斑的掃描向的能量分佈呈梯形，而不是嚴格的90°平頂高斯Top-Flat分佈，這是因為掃描向的寬度較窄，光斑掃描向的能量難以實現呈嚴格的90°平頂高斯Top-Flat分佈；此外，照射到SiC基底表面的光斑實際上是由多個脈衝雷射光斑重疊形成，藉由控制預設的拼接精度(重疊率)，多個脈衝雷射光斑拼接形成最終的退火雷射光斑，掃描向能量呈梯形分佈，相對於呈嚴格的90°平頂高斯Top-Flat分佈來說，降低光斑的拼接精度要求，有利於提高退火效率。 In this embodiment, the energy distribution in the scanning direction of the rectangular spot is trapezoidal, instead of the strict 90° flat top Gaussian Top-Flat distribution. This is because the width of the scanning direction is narrow, and the energy in the scanning direction of the spot is difficult to achieve strict. The 90° flat top Gaussian Top-Flat distribution; in addition, the spot irradiated on the surface of the SiC substrate is actually formed by overlapping multiple pulsed laser spots. By controlling the preset stitching accuracy (overlap rate), multiple pulsed lasers The laser spots are spliced to form the final annealing laser spot, and the scanning direction energy is trapezoidal. Compared with the strict 90° flat-top Gaussian Top-Flat distribution, reducing the splicing accuracy requirements of the spot is beneficial to improving the annealing efficiency.

此外，相關技術中，通常採用蛇形掃描工件承載台實現雷射光斑對SiC基底表面的掃描，工件台進行水平向X及Y方向移動。由於SiC材料價格昂貴，SiC基底最大尺寸為150mm，國內客戶更多為100mm產線，因此需要設備尺寸小型化。相關技術中的退火設備由於需要相容200mm-300mm尺寸基底的退火需求，蛇形掃描工件承載台的運動行程佔用設備空間較大，難以實現退火設備的小型化。本實施例中，雷射光斑對SiC基底表面的掃描藉由 掃描振鏡單元300實現，工件承載機構400無需運動，能夠簡化工件承載台，實現退火設備的小型化。此外，掃描振鏡的可控性高，掃描速度快，能夠提高退火品質及退火效率。 In addition, in the related art, a serpentine scanning workpiece carrier is usually used to scan the surface of the SiC substrate by a laser spot, and the workpiece table moves horizontally in the X and Y directions. Due to the high price of SiC materials, the maximum size of the SiC substrate is 150mm, and more domestic customers use 100mm production lines. Therefore, the equipment size needs to be miniaturized. The annealing equipment in the related art needs to be compatible with the annealing requirements of 200mm-300mm size substrates, and the movement stroke of the serpentine scanning workpiece carrier occupies a large equipment space, and it is difficult to realize the miniaturization of the annealing equipment. In this embodiment, the laser spot scans the surface of the SiC substrate by The scanning galvanometer unit 300 realizes that the workpiece carrying mechanism 400 does not need to move, which can simplify the workpiece carrying table and realize the miniaturization of the annealing equipment. In addition, the scanning galvanometer has high controllability and fast scanning speed, which can improve annealing quality and annealing efficiency.

本實施例提供的SiC基底的雷射退火裝置，藉由雷射整形單元200將來自雷射發射單元100的雷射光束整形為矩形光斑，矩形光斑的掃描向的能量分佈呈梯形，提供光斑能量分佈均勻性，進而提高退火均勻性。此外，藉由掃描振鏡單元300實現雷射光斑對SiC基底表面的掃描，工件承載機構400無需運動，能夠簡化工件承載台，實現退火設備的小型化，同時提高退火品質及退火效率。 In the laser annealing device for SiC substrate provided in this embodiment, the laser beam from the laser emitting unit 100 is shaped into a rectangular spot by the laser shaping unit 200, and the energy distribution of the scanning direction of the rectangular spot is trapezoidal, providing spot energy Distribution uniformity, thereby improving annealing uniformity. In addition, the scanning galvanometer unit 300 realizes the scanning of the laser spot on the surface of the SiC substrate, and the workpiece carrying mechanism 400 does not need to move, which can simplify the workpiece carrying table, realize the miniaturization of the annealing equipment, and improve the annealing quality and efficiency.

繼續參考圖3及圖4，選擇性地，光斑掃描向的能量分佈呈梯形，梯形的上底邊大於或等於下底邊的一半，矩形光斑的步進向的能量呈平頂高斯Top-Flat分佈。 Continuing to refer to Figures 3 and 4, optionally, the energy distribution in the scanning direction of the spot is trapezoidal, the upper bottom of the trapezoid is greater than or equal to half of the bottom bottom, and the energy of the stepping direction of the rectangular spot is flat-top Gaussian Top-Flat distributed.

選擇性地，矩形光斑的掃描向的能量分佈呈等腰梯形分佈，等腰梯形的底角為45±2°。45°角的設計可以獲得更小的光斑間差異性，這會進一步降低光斑拼接(重疊率)精度要求。雷射整形單元200通常包含衍射光學元件(Diffractive Optical Elements，DOE)，DOE整形效果與所選雷射器的模態M2因數有關，DOE設計一經確認就不可更改，這就需要單一而簡單的設計，45度梯形光斑設計可以獲得具有性價比的光斑品質，可適用於多種類型基底的退火。同時，選擇45度梯形，相當於光強的角度調製，相比90度平頂高斯Top-Flat分佈，更接近高斯分佈光斑的退火效果，有利於雷射器整個壽命週期內的光斑均勻性管理。 Optionally, the energy distribution in the scanning direction of the rectangular spot is an isosceles trapezoid, and the bottom angle of the isosceles trapezoid is 45±2°. The design of the 45° angle can obtain a smaller difference between the spots, which will further reduce the accuracy requirements of the spot stitching (overlap rate). The laser shaping unit 200 usually contains Diffractive Optical Elements (DOE). The DOE shaping effect is related to the modal M2 factor of the selected laser. The DOE design cannot be changed once confirmed, which requires a single and simple design. , The 45-degree trapezoidal spot design can obtain cost-effective spot quality, which is suitable for annealing of various types of substrates. At the same time, the 45-degree trapezoid is selected, which is equivalent to the angle modulation of the light intensity. Compared with the 90-degree flat top Gaussian Top-Flat distribution, it is closer to the annealing effect of the Gaussian distribution spot, which is beneficial to the management of the spot uniformity during the entire life cycle of the laser .

選擇性地，預設掃描方式為環形掃描方式，自SiC基底的邊緣 到中心，或者，自SiC基底的中心到邊緣。SiC基底通常為圓形基底，單次掃描形成與SiC基底圓心同心的圓環，自SiC基底的邊緣向中心步進，或自SiC基底的中心向邊緣步進，完成基底表面退火區域的掃描退火。環形掃描方式，有利於減少高溫退火引起的退火應力，避免退火冷卻後，SiC基底因退火應力導致出現宏觀形變或表面出現裂紋的問題。在一實施例中，預設掃描方式也可以是蛇形掃描方式。 Optionally, the preset scanning method is a circular scanning method, from the edge of the SiC substrate To the center, or, from the center to the edge of the SiC substrate. The SiC substrate is usually a circular substrate. A single scan forms a ring concentric with the center of the SiC substrate. Stepping from the edge of the SiC substrate to the center, or from the center to the edge of the SiC substrate, completes the scanning annealing of the annealing area on the surface of the substrate. . The circular scanning method helps reduce the annealing stress caused by high-temperature annealing, and avoids the problem of macroscopic deformation or surface cracks on the SiC substrate due to annealing stress after annealing and cooling. In an embodiment, the preset scanning mode may also be a serpentine scanning mode.

選擇性地，如圖2所示，雷射發射單元100包含雷射器101、起偏器102、雷射控制器103、分光鏡104及雷射能量採集器105，其中，雷射器101、起偏器102及分光鏡104沿雷射光路傳播方向依次佈置。雷射控制器103設置為接收主控制器500的控制指令，控制雷射器101發出預設功率及預設波長的雷射光束；起偏器102設置為將來自雷射器101的雷射光束轉變為偏振方向不同的兩個偏振雷射光束；分光鏡104位於雷射器101的出射光路上，雷射光束中第一方向的偏振雷射光束透過分光鏡104出射，雷射光束中第二方向的偏振雷射光束經分光鏡104反射後，耦合至雷射能量採集器105；雷射能量採集器105設置為採集第二方向的偏振雷射光束的能量資訊，計算出雷射器101發出的雷射光束的功率，並回饋給雷射控制器103，當雷射控制器103檢測到雷射器101發出的雷射光束的功率與預設功率的偏差超過預設的閾值時，雷射控制器103控制雷射器101對出射雷射的功率進行修正。如此，對雷射器101發出的雷射光束的功率實現精準控制，提高退火品質。 Optionally, as shown in FIG. 2, the laser emitting unit 100 includes a laser 101, a polarizer 102, a laser controller 103, a beam splitter 104, and a laser energy harvester 105, wherein the laser 101, The polarizer 102 and the beam splitter 104 are arranged in sequence along the propagation direction of the laser light path. The laser controller 103 is set to receive a control command from the main controller 500 to control the laser 101 to emit a laser beam with a preset power and a preset wavelength; the polarizer 102 is set to transfer the laser beam from the laser 101 It is converted into two polarized laser beams with different polarization directions; the beam splitter 104 is located on the exit light path of the laser 101, the polarized laser beam in the first direction in the laser beam is emitted through the beam splitter 104, and the second in the laser beam is After being reflected by the beam splitter 104, the laser energy harvester 105 is coupled to the laser energy harvester 105; the laser energy harvester 105 is set to collect the energy information of the polarized laser beam in the second direction, and calculates that the laser 101 emits The power of the laser beam is fed back to the laser controller 103. When the laser controller 103 detects that the deviation between the power of the laser beam emitted by the laser 101 and the preset power exceeds the preset threshold, the laser The controller 103 controls the laser 101 to correct the power of the emitted laser. In this way, the power of the laser beam emitted by the laser 101 can be precisely controlled, and the annealing quality can be improved.

選擇性地，雷射發射單元100進一步包含溫度控制及保護器106，溫度控制及保護器106設置為即時採集雷射器101內部的溫度資訊，並回饋給雷射控制器103。雷射器101在工作過程中，由於雷射能量較高，雷射 器101內部可以達到較高的溫度，為防止雷射器101內部電路在高溫下發生故障，設置溫度控制及保護器106，即時採集雷射器101內部的溫度資訊，並回饋給雷射控制器103，當雷射器內部溫度達到預設安全溫度極限值時，雷射控制器103控制雷射器101停止工作，防止雷射器101內部電路燒壞。 Optionally, the laser emitting unit 100 further includes a temperature control and protector 106, and the temperature control and protector 106 is configured to collect temperature information inside the laser 101 in real time and feed it back to the laser controller 103. During the operation of the laser 101, due to the high laser energy, the laser The inside of the laser 101 can reach a higher temperature. In order to prevent the internal circuit of the laser 101 from malfunctioning at high temperatures, a temperature control and protector 106 is set up to collect the temperature information inside the laser 101 in real time and feed it back to the laser controller 103. When the internal temperature of the laser reaches the preset safe temperature limit value, the laser controller 103 controls the laser 101 to stop working to prevent the internal circuit of the laser 101 from burning out.

選擇性地，雷射整形單元200包含沿光束傳播方向依次佈置的準直器201、擴束器202及衍射光學元件203。準直器201設置為將來自雷射發射單元100的發散的雷射光束準直為平行的雷射光束；擴束器202設置為擴大平行輸入光束的直徑；衍射光學元件203與主控制器500電連接，且設置為將來自擴束器202的雷射光束整形為矩形光斑，矩形光斑的掃描向的能量分佈呈梯形。選擇性地，矩形光斑的掃描向的能量分佈呈等腰梯形分佈，等腰梯形的底角為45±2°。 Optionally, the laser shaping unit 200 includes a collimator 201, a beam expander 202, and a diffractive optical element 203 arranged in sequence along the beam propagation direction. The collimator 201 is configured to collimate the divergent laser beam from the laser emitting unit 100 into a parallel laser beam; the beam expander 202 is configured to expand the diameter of the parallel input beam; the diffractive optical element 203 and the main controller 500 It is electrically connected and configured to shape the laser beam from the beam expander 202 into a rectangular spot, and the energy distribution of the rectangular spot in the scanning direction is trapezoidal. Optionally, the energy distribution in the scanning direction of the rectangular spot is an isosceles trapezoid, and the bottom angle of the isosceles trapezoid is 45±2°.

選擇性地，掃描振鏡單元300包含沿光束傳播方向依次佈置的掃描振鏡301及與掃描振鏡配合的聚焦透鏡302，聚焦透鏡302可以是平場聚焦透鏡，掃描振鏡301與主控制器500電連接，掃描振鏡301包含X軸掃描振鏡3011及Y軸掃描振鏡3012，X軸掃描振鏡3011及Y軸掃描振鏡3012相互正交，藉由控制自身的振動幅度及速度，可控制雷射光束在SiC基底表面按預設方式掃描，平場聚焦透鏡302將雷射光束投影到SiC基底表面。 Optionally, the scanning galvanometer unit 300 includes a scanning galvanometer 301 and a focusing lens 302 matched with the scanning galvanometer sequentially arranged along the beam propagation direction. The focusing lens 302 may be a flat-field focusing lens. The scanning galvanometer 301 and the main controller 500 Electrically connected, scanning galvanometer 301 includes X-axis scanning galvanometer 3011 and Y-axis scanning galvanometer 3012. X-axis scanning galvanometer 3011 and Y-axis scanning galvanometer 3012 are orthogonal to each other. By controlling their own vibration amplitude and speed, The laser beam is controlled to scan on the surface of the SiC substrate in a preset manner, and the flat field focusing lens 302 projects the laser beam onto the surface of the SiC substrate.

選擇性地，聚焦透鏡302為遠心鏡。經過DOE整形的雷射光束，藉由掃描振鏡系統到達退火基底表面仍然存在光強的不均勻性，這主要是因為採用平場聚焦透鏡時，退火中心及邊緣的發散角度不同而引起的光程差，圖5為光強與退火半徑的關係曲線圖，如圖5所示，隨著退火半徑的增大(即發散角度越大)，光斑強度減少。可以藉由餘弦曲線進行光強補正，進一步提 高退火均勻性，滿足SiC退火均勻性。在一實施例中，藉由特殊設計的遠心鏡，利用餘弦補正原理(計算結構光輸出值與發散角度關係，對視場中心與邊緣退火位置的光程差進行補正)，使系統的入瞳在遠心鏡的前焦點位置，以使聚焦光束的主光線在任何視角的情況下都垂直於焦平面，起到補償視場中心與邊緣光強差的作用。 Optionally, the focusing lens 302 is a telecentric lens. The laser beam that has undergone DOE shaping, reaches the surface of the annealed substrate through the scanning galvanometer system, and there is still unevenness in the light intensity. This is mainly due to the optical path caused by the different divergence angles of the annealing center and edge when a flat-field focusing lens is used. In contrast, Fig. 5 is a graph of the relationship between light intensity and annealing radius. As shown in Fig. 5, as the annealing radius increases (that is, the greater the divergence angle), the spot intensity decreases. The light intensity can be corrected by the cosine curve to further improve High annealing uniformity meets SiC annealing uniformity. In one embodiment, by using a specially designed telecentric lens, the principle of cosine compensation (calculating the relationship between the structured light output value and the divergence angle, and correcting the optical path difference between the center of the field of view and the edge annealing position) is used to make the entrance pupil of the system At the front focal position of the telecentric lens, the chief ray of the focused beam is perpendicular to the focal plane at any viewing angle, which can compensate for the difference in intensity between the center and the edge of the field of view.

選擇性地，雷射器101為355nm固體雷射器。相比相關技術中的Si基襯底，SiC基底退火要求更高的熔融溫度，N型大於1200℃，P型大於1600℃，能量密度對應1.5-3J/cm2，退火深度在100nm以內，雷射器101波長選擇355nm，相比於相關技術中的527nm波長的雷射器，能量利用率更為集中。此外，355nm波長的雷射器101的模態M2因數小於1.2，接近於1，非常適合矩形光束DOE整形。在本實施例中，雷射光斑的能量密度為3J/cm2，有效光斑均勻性

Figure 108148441-A0202-12-0009-6
5%。 Optionally, the laser 101 is a 355nm solid laser. Compared with Si-based substrates in related technologies, annealing of SiC substrates requires a higher melting temperature. The N-type is greater than 1200°C, the P-type is greater than 1600°C, the energy density corresponds to 1.5-3J/cm 2 , and the annealing depth is within 100 nm. The wavelength of the transmitter 101 is selected to be 355nm, which is more concentrated in energy utilization than the laser with a wavelength of 527nm in the related art. In addition, the modal M2 factor of the 355nm wavelength laser 101 is less than 1.2, which is close to 1, which is very suitable for rectangular beam DOE shaping. In this embodiment, the energy density of the laser spot is 3J/cm 2 , and the effective spot uniformity is
Figure 108148441-A0202-12-0009-6
5%.

選擇性地，雷射退火裝置進一步包含快門元件600，快門元件600與主控制器500電連接，且位於準直器201及擴束器202之間，快門元件600設置為控制雷射光束的單次掃描時間。在本實施例中，以環形掃描方式為例，在單次掃描時間內，主控制器500控制快門元件600保持打開，雷射光束在掃描振鏡單元300的控制下，在SiC基底表面形成一掃描圓環，主控制器500控制快門元件600關閉，掃描振鏡單元300控制光斑向基底中心或邊緣步進，主控制器500控制快門元件600打開，進行下一相鄰掃描圓環的掃描。 Optionally, the laser annealing device further includes a shutter element 600, which is electrically connected to the main controller 500, and is located between the collimator 201 and the beam expander 202, and the shutter element 600 is configured to control the laser beam. Scan time. In this embodiment, taking the circular scanning mode as an example, during a single scanning time, the main controller 500 controls the shutter element 600 to remain open, and the laser beam forms a laser beam on the surface of the SiC substrate under the control of the scanning galvanometer unit 300. When scanning the circle, the main controller 500 controls the shutter element 600 to close, the scanning galvanometer unit 300 controls the light spot to step toward the center or edge of the substrate, and the main controller 500 controls the shutter element 600 to open to scan the next adjacent scanning circle.

該退火裝置中，進一步可以在光路傳播路徑中設置反光鏡701及反光鏡702，反光鏡主要設置為調整雷射的傳播路徑，反光鏡的反射率大於98%，根據雷射傳播路線改變的需要，可設置多個，以及設置於雷射傳播路徑 上的任意位置。 In the annealing device, a reflector 701 and a reflector 702 can be further arranged in the propagation path of the light path. The reflector is mainly set to adjust the propagation path of the laser. The reflectivity of the reflector is greater than 98%, according to the needs of the laser propagation route change. , Can be set multiple, and set in the laser propagation path Anywhere on the top.

在上述實施例中，為了提高退火效率，掃描振鏡單元300中，振鏡數量可以為多個，對應多片基底同時退火需求。該退火裝置進一步包含外部參數輸入控制器800，設置為輸入包含外部環境參數，藉由監控外部環境參數，如溫度、濕度等，電氣等相關參數，保證整機工作在安全可靠的狀態。 In the above embodiment, in order to improve the annealing efficiency, the number of galvanometers in the scanning galvanometer unit 300 may be multiple, which corresponds to the simultaneous annealing requirements of multiple substrates. The annealing device further includes an external parameter input controller 800, which is set to input external environmental parameters. By monitoring the external environmental parameters, such as temperature, humidity, etc., electrical and other related parameters, the whole machine is ensured to work in a safe and reliable state.

示例性地，SiC基底雷射退火工藝流程如下： Exemplarily, the laser annealing process of SiC substrate is as follows:

選取直徑為150mm的4H-SiC襯底片；用標準RCA清洗工藝清潔樣品表面，再用氫氟酸緩衝液去除樣品表面的自然氧化層；藉由測控建設工藝澱積50nm的金屬Ni；藉由光刻及幹法刻蝕的方法，將圓型傳輸線模型(Circular Transmission Line Model，CTLM)結果轉移到金屬層；利用雷射退火裝置，如圖2所示，藉由雷射光束照射Ni/SiC表面形成歐姆接觸，所用退火過程需要在N2氛圍中退火；其中雷射光斑形貌為矩形，矩形光斑的掃描向的能量分佈呈等腰梯形分佈，等腰梯形的底角為45±2°，步進向能量分佈呈高斯平頂，雷射波長為355nm，雷射光斑的能量密度為3J/cm2，有效光斑均勻性

Figure 108148441-A0202-12-0010-7
5%；對退火後的基底進行檢查，檢查項包含表面外觀、表面粗糙度測試(要求小於退火深度，如100nm)及圓型傳輸線模型CTLM退火電阻測試(要求小於電阻如10-5Ω．cm2)。 Choose a 4H-SiC substrate with a diameter of 150mm; clean the surface of the sample with a standard RCA cleaning process, and then use a hydrofluoric acid buffer to remove the natural oxide layer on the surface of the sample; deposit 50nm of metal Ni through the measurement and control construction process; The method of engraving and dry etching transfers the results of the Circular Transmission Line Model (CTLM) to the metal layer; using a laser annealing device, as shown in Figure 2, irradiate the Ni/SiC surface with a laser beam To form an ohmic contact, the annealing process used needs to be annealed in a N 2 atmosphere; the laser spot has a rectangular shape, and the energy distribution in the scanning direction of the rectangular spot is an isosceles trapezoid. The bottom angle of the isosceles trapezoid is 45±2°. The step-wise energy distribution is Gaussian flat top, the laser wavelength is 355nm, the energy density of the laser spot is 3J/cm 2 , and the effective spot is uniform
Figure 108148441-A0202-12-0010-7
5%; check the annealed substrate. The inspection items include surface appearance, surface roughness test (required less than the annealing depth, such as 100nm) and round transmission line model CTLM annealing resistance test (required less than resistance such as 10-5Ω·cm 2 ).

於本發明的描述中，需要理解的是，術語「上」等方位或位置關係為基於圖式所示的方位或位置關係，僅是為了便於描述及簡化操作，而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造及操作，因此不能理解為對本發明的限制。 In the description of the present invention, it should be understood that the term "shang" and other orientations or positional relationships are based on the orientations or positional relationships shown in the diagrams, and are only for the convenience of description and simplifying operations, rather than indicating or implying what they mean. The device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention.

在本說明書的描述中，參考術語「一實施例」等的描述意指結 合該實施例的具體特徵、結構、材料或者特點包含於本發明的至少一個實施例或示例中。在本說明書中，對上述術語的示意性表述不一定指的是相同的實施例。 In the description of this specification, the description with reference to the term "an embodiment" and the like means The specific features, structures, materials, or characteristics of this embodiment are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above-mentioned terms does not necessarily refer to the same embodiment.

此外，應當理解，雖然本說明書按照實施方式加以描述，但並非每個實施方式僅包含一個獨立的技術手段，說明書的這種敘述方式僅僅是為清楚器件，所屬技術領域中具有通常知識者應當將說明書作為一個整體，多個實施例中的技術手段也可以適當地組合，形成所屬技術領域中具有通常知識者可以理解的其他實施方式。 In addition, it should be understood that although this specification is described in accordance with the embodiments, not every embodiment only includes an independent technical means. This narrative in the specification is only for clarity of the device, and those with ordinary knowledge in the technical field should consider The specification as a whole, the technical means in the multiple embodiments can also be appropriately combined to form other embodiments that can be understood by those with ordinary knowledge in the technical field.

本發明主張申請日為2018年12月28日、申請號為201811627629.3的中國大陸發明專利申請之優先權，該發明的全部內容藉由引用結合在本發明中。 The present invention claims the priority of the invention patent application in Mainland China whose application date is December 28, 2018 and the application number is 201811627629.3. The entire content of the invention is incorporated into the present invention by reference.

100‧‧‧雷射發射單元 100‧‧‧Laser launch unit

101‧‧‧雷射器 101‧‧‧Laser

102‧‧‧起偏器 102‧‧‧Polarizer

103‧‧‧雷射控制器 103‧‧‧Laser Controller

104‧‧‧分光鏡 104‧‧‧Splitter

105‧‧‧雷射能量採集器 105‧‧‧Laser Energy Harvester

106‧‧‧溫度控制及保護器 106‧‧‧Temperature control and protector

200‧‧‧雷射整形單元 200‧‧‧Laser shaping unit

201‧‧‧準直器 201‧‧‧Collimator

202‧‧‧擴束器 202‧‧‧Beam Expander

203‧‧‧衍射光學元件 203‧‧‧Diffractive optical element

300‧‧‧掃描振鏡單元 300‧‧‧Scanning galvanometer unit

301‧‧‧掃描振鏡 301‧‧‧Scanning galvanometer

302‧‧‧聚焦透鏡 302‧‧‧Focusing lens

400‧‧‧工件承載機構 400‧‧‧Workpiece Carrying Mechanism

500‧‧‧主控制器 500‧‧‧Main Controller

600‧‧‧快門元件 600‧‧‧Shutter element

701‧‧‧反光鏡 701‧‧‧Mirror

702‧‧‧反光鏡 702‧‧‧Mirror

800‧‧‧外部參數輸入控制器 800‧‧‧External parameter input controller

3011‧‧‧X軸掃描振鏡 3011‧‧‧X-axis scanning galvanometer

3012‧‧‧Y軸掃描振鏡 3012‧‧‧Y-axis scanning galvanometer

Claims (11)

一種SiC基底的雷射退火裝置，其特徵係其包含：雷射發射單元，設置為提供退火所需的雷射光源；雷射整形單元，設置為將前述雷射發射單元發射的雷射整形為矩形光斑，前述矩形光斑的沿掃描向的能量分佈呈梯形；掃描振鏡單元，設置為控制來自前述雷射整形單元的雷射光束以使前述雷射光束在待退火的SiC基底表面按預設掃描方式掃描；工件承載機構，設置為承載待退火的SiC基底；及主控制器，分別與前述雷射發射單元、前述雷射整形單元、前述掃描振鏡單元及前述工件承載機構電連接；其中，前述雷射整形單元包含沿光束傳播方向依次佈置的準直器、擴束器及衍射光學元件；前述準直器設置為將來自雷射發射單元的發散的雷射光束準直為平行的雷射光束；前述擴束器設置為擴大平行輸入光束的直徑；前述衍射光學元件與前述主控制器電連接，且設置為將來自前述擴束器的雷射光束整形為矩形光斑，前述矩形光斑的掃描向的能量分佈呈梯形。 A SiC substrate laser annealing device, which is characterized in that it comprises: a laser emitting unit configured to provide a laser light source required for annealing; and a laser shaping unit configured to shape the laser emitted by the aforementioned laser emitting unit into Rectangular spot, the energy distribution of the aforementioned rectangular spot along the scanning direction is trapezoidal; the scanning galvanometer unit is configured to control the laser beam from the aforementioned laser shaping unit so that the aforementioned laser beam is preset on the surface of the SiC substrate to be annealed Scanning mode scanning; a workpiece carrying mechanism configured to carry the SiC substrate to be annealed; and a main controller respectively electrically connected with the aforementioned laser emitting unit, the aforementioned laser shaping unit, the aforementioned scanning galvanometer unit, and the aforementioned workpiece carrying mechanism; wherein The aforementioned laser shaping unit includes a collimator, a beam expander, and a diffractive optical element arranged in sequence along the beam propagation direction; the aforementioned collimator is configured to collimate the divergent laser beam from the laser emitting unit into a parallel laser beam. The aforementioned beam expander is configured to expand the diameter of the parallel input beam; the aforementioned diffractive optical element is electrically connected to the aforementioned main controller, and is configured to shape the laser beam from the aforementioned beam expander into a rectangular spot. The energy distribution in the scan direction is trapezoidal. 如申請專利範圍第1項所記載之SiC基底的雷射退火裝置，其中，前述矩形光斑的沿步進向的能量分佈呈平頂高斯分佈。 The laser annealing device for SiC substrate as described in the first item of the scope of patent application, wherein the energy distribution of the aforementioned rectangular spot along the stepping direction is a flat-top Gaussian distribution. 如申請專利範圍第1項所記載之SiC基底的雷射退火裝置，其中，前述梯形的上底邊的長度大於或等於下底邊的長度的一半。 The laser annealing device for the SiC substrate described in the first item of the scope of patent application, wherein the length of the upper base of the trapezoid is greater than or equal to half of the length of the lower base. 如申請專利範圍第1項所記載之SiC基底的雷射退火裝置，其中，前述矩形光斑的沿掃描向的能量分佈呈等腰梯形分佈，前述等腰梯形的底角為45±2°。 In the laser annealing device for SiC substrate as described in the first item of the patent application, the energy distribution of the rectangular spot along the scanning direction is an isosceles trapezoid, and the base angle of the isosceles trapezoid is 45±2°. 如申請專利範圍第1項所記載之SiC基底的雷射退火裝置，其中，前述預設掃描方式為環形掃描方式，且設置為自前述SiC基底的邊緣到中心，或者，自前述SiC基底的中心到邊緣。 The laser annealing device for a SiC substrate as described in the first item of the scope of patent application, wherein the preset scanning method is a circular scanning method and is set from the edge to the center of the SiC substrate, or from the center of the SiC substrate To the edge. 如申請專利範圍第1項所記載之SiC基底的雷射退火裝置，其中，前述雷射發射單元包含雷射器、起偏器、雷射控制器、分光鏡及雷射能量採集器；前述雷射控制器設置為接收前述主控制器的控制指令以控制前述雷射器發出預設功率及預設波長的雷射光束；前述起偏器設置為將來自前述雷射器的雷射光束轉變為兩個偏振方向的偏振雷射光束；前述分光鏡位於前述雷射器的出射光路上，前述偏振雷射光束中第一方向的偏振雷射光束設置為透過前述分光鏡出射，第二方向的偏振雷射光束設置為經前述分光鏡反射後，耦合至前述雷射能量採集器；前述雷射能量採集器設置為採集前述第二方向的偏振雷射光束的能量資訊，並回請給前述雷射控制器。 For the SiC substrate laser annealing device described in the first item of the scope of patent application, the aforementioned laser emitting unit includes a laser, a polarizer, a laser controller, a beam splitter, and a laser energy harvester; the aforementioned laser The radio controller is configured to receive a control command from the main controller to control the laser to emit a laser beam with a preset power and a preset wavelength; the polarizer is configured to transform the laser beam from the laser into Polarized laser beams in two polarization directions; the aforementioned beam splitter is located on the exit light path of the aforementioned laser, the polarized laser beam in the first direction of the aforementioned polarized laser beam is set to exit through the aforementioned beam splitter, and the polarization in the second direction The laser beam is set to be coupled to the laser energy harvester after being reflected by the beam splitter; the laser energy harvester is set to collect the energy information of the polarized laser beam in the second direction, and return to the laser Controller. 如申請專利範圍第6項所記載之SiC基底的雷射退火裝置，其中，前述雷射發射單元進一步包含溫度控制及保護器，前述溫度控制及保護器設置為即時採集前述雷射器內部的溫度資訊，並回饋給前述雷射控制器。 As described in item 6 of the scope of patent application, the laser annealing device for a SiC substrate, wherein the laser emitting unit further includes a temperature control and protector, and the temperature control and protector is set to instantly collect the temperature inside the laser Information and feed back to the aforementioned laser controller. 如申請專利範圍第1項所記載之SiC基底的雷射退火裝置，其中，前述掃 描振鏡單元包含沿光束傳播方向依次佈置的掃描振鏡及與前述掃描振鏡配合的聚焦透鏡，前述掃描振鏡與前述主控制器電連接，前述掃描振鏡包含X軸掃描振鏡及Y軸掃描振鏡。 The laser annealing device for SiC substrate as described in item 1 of the scope of patent application, wherein the aforementioned scanning The scanning galvanometer unit includes a scanning galvanometer arranged in sequence along the beam propagation direction and a focusing lens matched with the scanning galvanometer. The scanning galvanometer is electrically connected to the main controller. The scanning galvanometer includes an X-axis scanning galvanometer and a Y-axis scanning galvanometer. Axis scanning galvanometer. 如申請專利範圍第8項所記載之SiC基底的雷射退火裝置，其中，前述聚焦透鏡為遠心鏡。 The SiC substrate laser annealing device described in item 8 of the scope of patent application, wherein the aforementioned focusing lens is a telecentric lens. 如申請專利範圍第6項所記載之SiC基底的雷射退火裝置，其中，前述雷射器為355nm固體雷射器。 The SiC substrate laser annealing device described in item 6 of the scope of patent application, wherein the aforementioned laser is a 355nm solid laser. 如申請專利範圍第1項所記載之SiC基底的雷射退火裝置，其中，進一步包含快門元件，前述快門元件與前述主控制器電連接，前述快門元件位於前述準直器及前述擴束器之間，且設置為控制雷射光束的單次掃描時間。 The SiC substrate laser annealing device described in the first item of the scope of patent application further includes a shutter element, the shutter element is electrically connected to the main controller, and the shutter element is located between the collimator and the beam expander. Time, and set to control the single scan time of the laser beam.
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