TWI726670B - Charge pump device and method for providing pump voltage - Google Patents
Charge pump device and method for providing pump voltage Download PDFInfo
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本公開大體上涉及一種電荷泵裝置,且更尤其涉及一種可提高電荷泵效率和容量的方法和電荷泵裝置。The present disclosure generally relates to a charge pump device, and more particularly to a method and a charge pump device that can improve the efficiency and capacity of the charge pump.
電荷泵裝置用來産生具有比電源電壓更高的電壓位準的泵電壓。電荷泵裝置可包含多個電容器,所述多個電容器可包含P-N接面。P-N接面可能導致降低電荷泵裝置的效率和容量的寄生電容。此外,常規的電荷泵裝置設計成産生正泵電壓或負泵電壓。因此,要求正泵電壓和負泵電壓的電子裝置必須包含若干電荷泵裝置,這導致較高製造成本。The charge pump device is used to generate a pump voltage with a higher voltage level than the power supply voltage. The charge pump device may include a plurality of capacitors, and the plurality of capacitors may include a P-N junction. The P-N junction may cause parasitic capacitance that reduces the efficiency and capacity of the charge pump device. In addition, the conventional charge pump device is designed to generate a positive pump voltage or a negative pump voltage. Therefore, an electronic device that requires a positive pump voltage and a negative pump voltage must include several charge pump devices, which results in higher manufacturing costs.
由於近來對高性能電荷泵裝置的需求已經增長,所以對於可提高電荷泵效率和容量的電荷泵電容器和電荷泵裝置的創造性設計的需要已經增長。As the demand for high-performance charge pump devices has recently increased, the demand for charge pump capacitors and creative designs of charge pump devices that can improve the efficiency and capacity of the charge pump has increased.
本文中介紹了一種電荷泵裝置和用於使用所述電荷泵裝置來提供負泵電壓或正泵電壓的方法。This article introduces a charge pump device and a method for using the charge pump device to provide a negative pump voltage or a positive pump voltage.
在一些實施例中,電荷泵裝置可包含多個泵電容器、第一開關以及第二開關。多個泵電容器配置成産生負泵電壓或正泵電壓。第一開關耦合於第一電源線與多個泵電容器當中的第一泵電容器之間,且配置成使第一泵電容器電連接到第一電源線以産生正泵電壓。第二開關耦合於第二電源線與多個泵電容器當中的第二泵電容器之間,且配置成使第二泵電容器電連接到第二電源線以産生負泵電壓。In some embodiments, the charge pump device may include a plurality of pump capacitors, a first switch, and a second switch. The plurality of pump capacitors are configured to generate a negative pump voltage or a positive pump voltage. The first switch is coupled between the first power line and the first pump capacitor among the plurality of pump capacitors, and is configured to electrically connect the first pump capacitor to the first power line to generate a positive pump voltage. The second switch is coupled between the second power line and a second pump capacitor among the plurality of pump capacitors, and is configured to electrically connect the second pump capacitor to the second power line to generate a negative pump voltage.
在一些實施例中,一種提供負泵電壓或正泵電壓的方法包含以下步驟:串聯地電連接多個泵電容器以産生正泵電壓或負泵電壓;當電荷泵裝置配置成産生正泵電壓時,接通第一開關以使第一電源線電連接到多個泵電容器當中的第一泵電容器以産生正泵電壓;以及當電荷泵裝置配置成産生負泵電壓時,接通第二開關以使第二電源線電連接到多個電容器當中的第二泵電容器以産生負泵電壓。In some embodiments, a method of providing a negative pump voltage or a positive pump voltage includes the following steps: electrically connecting a plurality of pump capacitors in series to generate a positive pump voltage or a negative pump voltage; when the charge pump device is configured to generate a positive pump voltage , Turn on the first switch to electrically connect the first power line to the first pump capacitor among the plurality of pump capacitors to generate a positive pump voltage; and when the charge pump device is configured to generate a negative pump voltage, turn on the second switch to The second power line is electrically connected to a second pump capacitor among the plurality of capacitors to generate a negative pump voltage.
為了使前述內容更容易理解,以下詳細地描述伴有附圖的若干實施例。In order to make the foregoing content easier to understand, several embodiments accompanied with drawings are described in detail below.
參看圖1A,電荷泵裝置100a可包含多個泵電容器C1到泵電容器C6,以及多個開關SW31到開關SW35、開關SW21到開關SW26以及開關SW11到SW16。泵電容器C1到泵電容器C6經由開關SW31到開關SW35中的一個彼此耦合。更特定來說,泵電容器C1經由開關SW31耦合到泵電容器C2,泵電容器C2經由開關SW32耦合到泵電容器C3,泵電容器C3經由開關SW33耦合到泵電容器C4,泵電容器C4經由開關SW34耦合到泵電容器C5,且泵電容器C5經由開關SW35耦合到泵電容器C6。1A, the
泵電容器C1到泵電容器C6中的每一個具有第一端和第二端,其中泵電容器C1到泵電容器C6的第一端經由開關SW11到開關SW16耦合到電源線PL1,且泵電容器C1到泵電容器C6的第二端經由開關SW21到開關SW26耦合到電源線PL2。電源線PL1可接收電源電壓VCC,且電源線PL2可接收電源電壓GND。開關SW11到開關SW16配置成控制泵電容器C1到泵電容器C6的第一端與電源線PL1之間的電連接。開關SW21到開關SW26配置成控制泵電容器C1到泵電容器C6的第二端與電源線PL2之間的電連接。在一些實施例中,開關SW11到開關SW16、開關SW21到開關SW26以及開關SW31到開關SW35由開關信號(未繪示)控制。Each of the pump capacitor C1 to the pump capacitor C6 has a first terminal and a second terminal, wherein the first terminal of the pump capacitor C1 to the pump capacitor C6 is coupled to the power supply line PL1 via the switch SW11 to the switch SW16, and the pump capacitor C1 to the pump The second end of the capacitor C6 is coupled to the power supply line PL2 via the switch SW21 to the switch SW26. The power line PL1 can receive the power supply voltage VCC, and the power line PL2 can receive the power supply voltage GND. The switches SW11 to SW16 are configured to control the electrical connection between the first ends of the pump capacitor C1 to the pump capacitor C6 and the power supply line PL1. The switches SW21 to SW26 are configured to control the electrical connection between the second end of the pump capacitor C1 to the pump capacitor C6 and the power supply line PL2. In some embodiments, the switches SW11 to SW16, the switches SW21 to SW26, and the switches SW31 to SW35 are controlled by switching signals (not shown).
在一些實施例中,電荷泵裝置100a進一步包含開關SW_P和SW_N。開關SW_P耦合於泵電容器C6的第二端與電源線PL1之間,且配置成控制泵電容器C6的第二端與電源線PL1之間的電連接。開關SW_N耦合於泵電容器C1的第一端與電源線PL2之間,且配置成控制泵電容器C1的第一端與電源線PL2之間的電連接。在一些實施例中,電荷泵裝置100a進一步包含輸出端OUT1和輸出端OUT2,其中輸出端OUT1耦合到泵電容器C1的第一端,且輸出端OUT2耦合到泵電容器C6的第二端。輸出端OUT1配置成輸出正泵電壓,且輸出端OUT2配置成輸出負泵電壓。正泵電壓和負泵電壓的電壓位準大於電源電壓VCC的電壓位準。在一些實施例中,電荷泵裝置100a可基於開關SW_N和開關SW_P的開關來産生正泵電壓或負泵電壓。舉例來說,當接通開關SW_P且切斷開關SW_N時,電荷泵裝置100a可産生正泵電壓且將所述正泵電壓輸出到輸出端OUT1。當切斷開關SW_P且接通開關SW_N時,電荷泵裝置100a可産生負泵電壓且將所述負泵電壓輸出到輸出端OUT2。換句話說,同一電荷泵裝置100a可用來在輸出端OUT1中産生正泵電壓或在輸出端OUT2中産生負泵電壓。因此,提高了電荷泵裝置100a的功能性和靈活性。In some embodiments, the
在一些實施例中,電荷泵裝置100a可包含第一階段和第二階段,其中在第一階段中對泵電容器C1到泵電容器C6進行充電,且在第二階段中泵電容器C1到泵電容器C6配置成産生負泵電壓或正泵電壓。In some embodiments, the
參看圖1B,根據一些實施例示出處於第一階段的電荷泵裝置100b。使用相同的附圖標號對圖1B中的電荷泵裝置100b和圖1A中的電荷泵裝置100a中的相同元件進行編號。在電荷泵裝置100b的第一階段期間,切斷開關SW31到開關SW35以及開關SW_P和開關SW_N,從而斷開泵電容器C1到電容器C6當中的電連接。同時,接通開關SW11到開關SW16以及開關SW21到開關SW26以在泵電容器C1到泵電容器C6與電源線PL1和電源線PL2之間形成電連接。泵電容器C1到泵電容器C6中的每一個的第一端電連接到電源線PL1,且泵電容器C1到泵電容器C6中的每一個的第二端電連接到電源線PL2。因此,在第一階段中泵電容器C1到泵電容器C6並聯地耦合。在第一階段中將泵電容器C1到泵電容器C6中的每一個充電到預定電壓位準。在一些實施例中,預定電壓位準可以是電源電壓VCC的電壓位準,但本公開不限於此。在一些實施例中,設定第一階段的時間段,使得將電容器C1到電容器C6中的每一個充電到預定電壓位準。Referring to FIG. 1B, the
參看圖1C,根據一些實施例示出在第二階段中配置成産生正泵電壓Vp1的電荷泵裝置100c。使用相同的附圖標號對圖1C中的電荷泵裝置100c和圖1A中的電荷泵裝置100a中的相同元件進行編號。在第二階段中,切斷電荷泵裝置100c的開關SW11到開關SW16以及開關SW21到開關SW26,且接通電荷泵裝置100c的開關SW31到開關SW35以串聯地電連接泵電容器C1到泵電容器C6。同時,切斷電荷泵裝置100c的開關SW_N且接通電荷泵裝置100c的開關SW_P以使泵電容器C6的第二端電連接到電源線PL1。因此,將電源電壓VCC供應到泵電容器C6的第二端,且産生正泵電壓Vp1並將所述正泵電壓Vp1輸出到輸出端OUT1。大於電源電壓VCC的電壓位準的正泵電壓Vp1的電壓位準可基於泵電容器C1到泵電容器C6的數目和泵電容器C1到泵電容器C6的電容值來確定。1C, a
參看圖1D,根據一些實施例示出在第二階段中配置成産生負泵電壓Vp2的電荷泵裝置100d。使用相同的附圖標號對圖1D中的電荷泵裝置100d和圖1A中的電荷泵裝置100a中的相同元件進行編號。在第二階段中,切斷電荷泵裝置100d的開關SW11到開關SW16以及開關SW21到開關SW26,且接通電荷泵裝置100d的開關SW31到開關SW35,以串聯地電連接泵電容器C1到泵電容器C6。同時,接通電荷泵裝置100d的開關SW_N且切斷電荷泵裝置100d的開關SW_P以使泵電容器C1的第一端電連接到電源線PL2。因此,將電源電壓GND供應到泵電容器C1的第一端,且産生負泵電壓Vp2並將所述負泵電壓Vp2輸出到輸出端OUT2。負泵電壓Vp2的電壓位準可基於泵電容器C1到泵電容器C6的數目和電容器C1到電容器C6的電容值來確定。1D, a
參看圖2,根據一些實施例示出泵電容器Cx的橫截面視圖。泵電容器Cx可以是圖1A到圖1D中的電荷泵裝置的泵電容器C1到泵電容器C6中的任何一個。泵電容器Cx可包含基板205、深井203、井201以及閘極層202。在一些實施例中,基板205為p型基板205,深井203為n型深井203,井201為p型井201,但本公開不限於此。基板205、深井203以及井201的半導體類型可基於設計需要來變化。泵電容器Cx可具有兩個端,即低側端和高側端,其中閘極層202可耦合到泵電容器Cx的低側端且p型井201可耦合到泵電容器Cx的高側端。泵電容器Cx的低側端和高側端可取决於基板205、深井203以及井201的半導體類型而變化。Referring to Figure 2, a cross-sectional view of a pump capacitor Cx is shown in accordance with some embodiments. The pump capacitor Cx may be any one of the pump capacitor C1 to the pump capacitor C6 of the charge pump device in FIGS. 1A to 1D. The pump capacitor Cx may include a
在一些實施例中,p型井201包含耦合到端T2和端T3的p型摻雜區2011和p型摻雜區2013,且閘極層202可耦合到端T1。端T1和端T3可分別稱為泵電容器Cx的低側端和高側端。在一些實施例中,泵電容器Cx為具有MOS電晶體結構的金屬氧化物半導體(metal-oxide-semiconductor;MOS)。MOS結構可包含耦合到端T1的閘極、耦合到端T2的汲極以及耦合到終端T3的源極。In some embodiments, the p-
在一些實施例中,p型基板205可電容耦合到n型深井203,其中寄生電容器PC1由於p型基板205與n型深井203之間的P-N接面而存在。n型深井203可電容耦合到p型井201,其中寄生電容器PC2由於n型深井203與p型井201之間的P-N接面而存在。寄生電容器PC1和寄生電容器PC2的寄生電容可能降低泵電容器Cx的泵效率。In some embodiments, the p-
在一些實施例中,泵電容器Cx的p型基板205通過參考電壓(例如GND)偏壓且n型深井203是浮動的。由於n型深井203是浮動的,所以寄生電容器PC1串聯耦合到寄生電容器PC2,從而减小寄生電容器PC1和寄生電容器PC2的等效寄生電容。寄生電容器PC1和寄生電容器PC2的等效寄生電容的减小提高泵電容器Cx的泵效率。換句話說,通過使n型深井203浮動,提高了泵電容器Cx的泵效率。In some embodiments, the p-
此外,p型基板205、n型深井203以及p型井201可形成PNP電晶體(例如雙極電晶體),所述PNP電晶體具有基極(所述基極為n型深井203)、集電極以及發射極(所述集電極和所述發射極為p型井201和p型基板205)。當n型深井203是浮動的時,集電極與發射極之間的擊穿電壓(例如電壓BVCEO)在正向方向和反向方向兩者上相對較高。因此,可在不擊穿泵電容器Cx的情况下在正向方向或反向方向兩者上將高電壓施加到泵電容器Cx的p型井201。換句話說,可將高正電壓或高負電壓施加到泵電容器Cx的p型井201。由於可將高正電壓和高負電壓兩者施加到泵電容器Cx的p型井201,所以泵電容器Cx可在電荷泵裝置中使用以産生正泵電壓或負泵電壓。In addition, the p-
參看圖1C和圖2,當電荷泵裝置100c配置成産生正泵電壓Vp1時,泵電容器Cx(例如泵電容器C1到泵電容器C6)的p型井201可通過高正電壓來施加。參看圖1D和圖2,當電荷泵裝置100d配置成産生正泵電壓Vp2時,泵電容器Cx(例如泵電容器C1到泵電容器C6)的p型井201可通過高負電壓來施加。1C and 2, when the
參看圖3A,根據一些實施例示出泵電容器300a的示意圖。泵電容器300a可包含n型基板305a、p型深井303a、n型井301a以及閘極層302a。泵電容器300a可包含兩個端,即高側端和低側端,其中泵電容器300a的低側端可耦合到n型井301a,且泵電容器300a的高側端可耦合到閘極層302a。在一些實施例中,泵電容器300a的高側端耦合到端T1,且泵電容器300a的低側端耦合到端T3。Referring to FIG. 3A, a schematic diagram of a
n型基板305a、p型深井303a以及n型井301a可形成NPN電晶體(例如雙極電晶體),所述NPN電晶體具有基極(所述基極為p型深井303a)、集電極以及發射極(所述集電極和所述發射極為n型基板305a和n型井301a)。在一些實施例中,p型深井303a是浮動的。當p型深井303a是浮動的時,集電極與發射極之間的擊穿電壓(例如電壓BVCEO)在正向方向和反向方向兩者上相對較高。The n-
參看圖3B,根據一些實施例示出由圖3A中的n型基板305a、p型深井303a以及n型井301a形成的NPN電晶體的IV特性。圖3B中的水平軸線示出當NPN電晶體的基極是浮動的時NPN電晶體的集電極與發射極之間的電壓。圖3B中的垂直軸線示出當NPN電晶體的基極是浮動的時流動穿過NPN電晶體的集電極和發射極的電流。如圖3B中所繪示,在正向方向和反向方向上的NPN電晶體的集電極與發射極之間的擊穿電壓Bvceo_1b和擊穿電壓Bvceo_2b較高。舉例來說,如圖3B中所繪示的擊穿電壓Bvceo_1b和擊穿電壓Bvceo_2b的絕對值比P-N接面的正向偏壓電壓高得多。因此,可在不擊穿泵電容器300a的情况下在正向方向或反向方向兩者上將高電壓施加到泵電容器300a的n型井301a。換句話說,可將高正電壓或高負電壓施加到泵電容器300a的n型井301a,從而允許泵電容器300a産生正泵電壓或負泵電壓。Referring to FIG. 3B, the IV characteristics of the NPN transistor formed by the n-
參看圖3C,根據一些實施例示出泵電容器300c的示意圖。泵電容器300c可包含p型基板305c、n型深井303c、p型井301c以及閘極層302c。泵電容器300c可包含兩個端,即高側端和低側端,其中泵電容器300c的低側端可耦合到閘極層302c,且泵電容器300c的高側端可耦合到p型井301c。在一些實施例中,泵電容器300c的高側端耦合到端T3,且泵電容器300c的低側端耦合到端T1。Referring to FIG. 3C, a schematic diagram of a
p型基板305c、n型深井303c以及p型井301c可形成PNP電晶體,所述PNP電晶體具有基極(所述基極為n型深井303c)、集電極以及發射極(所述集電極和所述發射極為p型基板305c和p型井301c)。在一些實施例中,n型深井303c是浮動的。當n型深井303c是浮動的時,集電極與發射極之間的擊穿電壓(例如電壓BVCEO)在正向方向和相反方向兩者上相對較高。The p-
參看圖3D,根據一些實施例示出由圖3C中的p型基板305c、n型深井303c以及p型井301c形成的PNP電晶體的IV特性。圖3D中的水平軸線示出當PNP電晶體的基極是浮動的時PNP電晶體的集電極與發射極之間的電壓。圖3D中的垂直軸線示出當PNP電晶體的基極是浮動的時流動穿過PNP電晶體的集電極和發射極的電流。如圖3D中所繪示,在正向方向和反向方向上的PNP電晶體的集電極與發射極之間的擊穿電壓Bvceo_1d和擊穿電壓Bvceo_2d較高。擊穿電壓Bvceo_1d和擊穿電壓Bvceo_2d的絕對值可比P-N接面的正向偏壓電壓大得多。因此,可在不擊穿泵電容器300c的情况下將高負電壓和高正電壓施加到p型井301c,從而允許圖3C中的泵電容器300c産生正泵電壓或負泵電壓。Referring to FIG. 3D, the IV characteristics of the PNP transistor formed by the p-
參看圖4,根據一些實施例示出用於産生負泵電壓或正泵電壓的方法的流程圖。在步驟S410中,多個泵電容器串聯地電連接。在一些實施例中,用於産生負泵電壓或正泵電壓的電荷泵裝置具有兩個階段,即第一階段和第二階段。在第二階段中,多個泵電容器串聯地電連接。在步驟S420中,當電荷泵裝置配置成産生正泵電壓時,接通第一開關以使第一電源線電連接到多個泵電容器當中的第一泵電容器以産生正泵電壓。在步驟S430中,當電荷泵裝置配置成産生負泵電壓時,接通第二開關以使第二電源線電連接到多個電容器當中的第二泵電容器以産生負泵電壓。Referring to FIG. 4, a flowchart of a method for generating a negative pump voltage or a positive pump voltage is shown according to some embodiments. In step S410, a plurality of pump capacitors are electrically connected in series. In some embodiments, the charge pump device for generating a negative pump voltage or a positive pump voltage has two stages, namely a first stage and a second stage. In the second stage, a plurality of pump capacitors are electrically connected in series. In step S420, when the charge pump device is configured to generate the positive pump voltage, the first switch is turned on to electrically connect the first power line to the first pump capacitor among the plurality of pump capacitors to generate the positive pump voltage. In step S430, when the charge pump device is configured to generate a negative pump voltage, the second switch is turned on to electrically connect the second power line to a second pump capacitor among the plurality of capacitors to generate a negative pump voltage.
總體來說,介紹了一種包含多個泵電容器的電荷泵裝置和用於産生正泵電壓或負泵電壓的方法。泵電容器中的每一個可包含第一半導體類型的基板、第二半導體類型的深井以及第一半導體類型的井。泵電容器的深井是浮動的,由此減小基板、深井以及泵電容器的井當中的等效寄生電容且增强泵電容器的泵容量。此外,可將高正電壓或高負電壓施加到泵電容器的井,因而允許同一電荷泵裝置産生正泵電壓或負泵電壓。因此,提高了電荷泵裝置的靈活性,且降低了電子裝置(尤其是要求正泵電壓和負泵電壓的電子裝置)的製造成本。In general, a charge pump device including a plurality of pump capacitors and a method for generating a positive pump voltage or a negative pump voltage are introduced. Each of the pump capacitors may include a substrate of the first semiconductor type, a deep well of the second semiconductor type, and a well of the first semiconductor type. The deep well of the pump capacitor is floating, thereby reducing the equivalent parasitic capacitance among the substrate, the deep well, and the well of the pump capacitor and enhancing the pump capacity of the pump capacitor. In addition, a high positive voltage or a high negative voltage can be applied to the well of the pump capacitor, thus allowing the same charge pump device to generate a positive pump voltage or a negative pump voltage. Therefore, the flexibility of the charge pump device is improved, and the manufacturing cost of the electronic device (especially the electronic device that requires a positive pump voltage and a negative pump voltage) is reduced.
將對本領域的技術人員顯而易見的是,可在不脫離本公開的範圍或精神的情况下對所公開實施例的結構作出各種修改和變化。鑒於前述內容,希望本公開涵蓋屬於所附發明申請專利範圍和其等效物的範圍內的本公開的修改和變化。It will be apparent to those skilled in the art that various modifications and changes can be made to the structure of the disclosed embodiments without departing from the scope or spirit of the present disclosure. In view of the foregoing, it is hoped that the present disclosure will cover the modifications and changes of the present disclosure that fall within the scope of the appended invention application patents and their equivalents.
100a、100b、100c、100d:電荷泵裝置100a, 100b, 100c, 100d: charge pump device
201:井201: Well
202、302a、302c:閘極層202, 302a, 302c: gate layer
203:深井203: Deep Well
205:基板205: substrate
300a、300c、C1、C2、C3、C4、C5、C6、Cx:泵電容器300a, 300c, C1, C2, C3, C4, C5, C6, Cx: pump capacitor
301a:n型井301a: n-type well
301c:p型井301c: p-type well
303a:p型深井303a: p-type deep well
303c:n型深井303c: n-type deep well
305a:n型基板305a: n-type substrate
305c:p型基板305c: p-type substrate
2011、2013:p型摻雜區2011, 2013: p-type doped region
Bvceo_1b、Bvceo_1d、Bvceo_2b、Bvceo_2d:擊穿電壓Bvceo_1b, Bvceo_1d, Bvceo_2b, Bvceo_2d: breakdown voltage
GND、VCC:電源電壓GND, VCC: power supply voltage
OUT1、OUT2:輸出端OUT1, OUT2: output terminal
PC1、PC2:寄生電容器PC1, PC2: parasitic capacitor
PL1、PL2:電源線PL1, PL2: power cord
S410、S420、S430:步驟S410, S420, S430: steps
SW11、SW12、SW13、SW14、SW15、SW16、SW21、SW22、SW23、SW24、SW25、SW26、SW31、SW32、SW33、SW34、SW35、SW_N、SW_P:開關SW11, SW12, SW13, SW14, SW15, SW16, SW21, SW22, SW23, SW24, SW25, SW26, SW31, SW32, SW33, SW34, SW35, SW_N, SW_P: switch
T1、T2、T3:端T1, T2, T3: end
Vp1:正泵電壓Vp1: Positive pump voltage
Vp2:負泵電壓Vp2: negative pump voltage
包含附圖以提供對本公開的進一步理解,且附圖併入本說明書中並構成本說明書的一部分。附圖示出本公開的實施例,且與描述一起用於解釋本公開的原理。 圖1A到圖1D為根據一些實施例示出電荷泵裝置的示意圖。 圖2為根據一些實施例的泵電容器的橫截面視圖。 圖3A到圖3B根據一些實施例示出泵電容器的示意圖和電流-電壓(IV)特性。 圖3C到圖3D根據一些替代性實施例示出泵電容器的示意圖和IV特性。 圖4為根據一些實施例示出産生適應於電荷泵裝置的負泵電壓或正泵電壓的方法的流程圖。 The accompanying drawings are included to provide a further understanding of the present disclosure, and the accompanying drawings are incorporated into this specification and constitute a part of this specification. The drawings illustrate embodiments of the present disclosure, and together with the description, serve to explain the principle of the present disclosure. 1A to 1D are schematic diagrams showing charge pump devices according to some embodiments. Figure 2 is a cross-sectional view of a pump capacitor according to some embodiments. 3A to 3B show schematic diagrams and current-voltage (IV) characteristics of pump capacitors according to some embodiments. 3C to 3D show schematic diagrams and IV characteristics of pump capacitors according to some alternative embodiments. FIG. 4 is a flowchart illustrating a method of generating a negative pump voltage or a positive pump voltage adapted to a charge pump device according to some embodiments.
100a:電荷泵裝置 100a: charge pump device
C1、C2、C3、C4、C5、C6:泵電容器 C1, C2, C3, C4, C5, C6: pump capacitor
GND、VCC:電源電壓 GND, VCC: power supply voltage
OUT1、OUT2:輸出端 OUT1, OUT2: output terminal
PL1、PL2:電源線 PL1, PL2: power cord
SW11、SW12、SW13、SW14、SW15、SW16、SW21、SW22、SW23、SW24、SW25、SW26、SW31、SW32、SW33、SW34、SW35、SW_N、SW_P:開關 SW11, SW12, SW13, SW14, SW15, SW16, SW21, SW22, SW23, SW24, SW25, SW26, SW31, SW32, SW33, SW34, SW35, SW_N, SW_P: switch
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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TW393644B (en) * | 1998-05-25 | 2000-06-11 | Mitsubishi Electric Corp | Charge pump circuit capable of generating positive and negative voltages and nonvolatile semiconductor memory device comprising the same |
CN1365147A (en) * | 2001-01-09 | 2002-08-21 | 三菱电机株式会社 | Charge pump circuit and working method using its non-volatile storage |
TW200605375A (en) * | 2004-06-08 | 2006-02-01 | Saifun Semiconductors Ltd | MOS capacitor with reduced parasitic capacitance |
TW200843347A (en) * | 2007-02-28 | 2008-11-01 | Sanyo Electric Co | Charge pump circuit |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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TW393644B (en) * | 1998-05-25 | 2000-06-11 | Mitsubishi Electric Corp | Charge pump circuit capable of generating positive and negative voltages and nonvolatile semiconductor memory device comprising the same |
CN1365147A (en) * | 2001-01-09 | 2002-08-21 | 三菱电机株式会社 | Charge pump circuit and working method using its non-volatile storage |
TW200605375A (en) * | 2004-06-08 | 2006-02-01 | Saifun Semiconductors Ltd | MOS capacitor with reduced parasitic capacitance |
TW200843347A (en) * | 2007-02-28 | 2008-11-01 | Sanyo Electric Co | Charge pump circuit |
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