TWI724951B - Integrated heater and method of manufacture - Google Patents

Integrated heater and method of manufacture Download PDF

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TWI724951B
TWI724951B TW109124906A TW109124906A TWI724951B TW I724951 B TWI724951 B TW I724951B TW 109124906 A TW109124906 A TW 109124906A TW 109124906 A TW109124906 A TW 109124906A TW I724951 B TWI724951 B TW I724951B
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blocks
sintered
sintered assembly
layer
assembly
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TW109124906A
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TW202046819A (en
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凱文 皮塔賽恩斯基
派翠克 馬格維奧
凱文 史密斯
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美商瓦特洛威電子製造公司
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/06—Heater elements structurally combined with coupling elements or holders
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013—Heaters using resistive films or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters

Abstract

A method of constructing a heater includes the steps of forming a sintered assembly including a ceramic substrate and a plurality of first slugs embedded therein, forming a functional element on one of opposing surfaces of the sintered assembly such that the functional element is connected to the plurality of first slugs, and forming a monolithic substrate in which the functional element and the plurality of first slugs are embedded.

Description

一體式加熱器及製造方法Integrated heater and manufacturing method

相關申請案之交互參照：本申請案為2017年11月21日申請之美國第15/819,028號「一體式加熱器及製造方法」之部分連續申請案，該案所有的內容併入本文。Cross-reference of related applications: This application is a partial continuous application of US No. 15/819,028 "Integrated Heater and Manufacturing Method" filed on November 21, 2017, and all the contents of this case are incorporated herein.

本揭露內容大體上乃有關電氣加熱器，且更特定為有關具有一更均勻結構及更均勻加熱性質的電氣加熱器，與其製造方法。The content of this disclosure generally relates to electric heaters, and more specifically relates to electric heaters having a more uniform structure and more uniform heating properties, and a method of manufacturing the same.

此段落的敘述僅提供關於本揭露內容的背景資訊且不構成習知技術。The description in this paragraph only provides background information about the content of the disclosure and does not constitute conventional technology.

具有一層狀構造之一些類型的電加熱器通常包括一基體、設置在該基體上的一介電層、設置在該介電層上的一電阻式加熱層、及設置在該電阻式加熱層上的一保護層。此介電層、電阻式加熱層及保護層可廣泛地稱為「功能性層」。電加熱器之此等功能性層中的一或多層可藉由積設一材料到一表面或一基體上而呈薄膜形式。Some types of electric heaters with a layered structure usually include a substrate, a dielectric layer provided on the substrate, a resistive heating layer provided on the dielectric layer, and a resistive heating layer provided on the resistive heating layer A protective layer on top. This dielectric layer, resistive heating layer, and protective layer can be widely referred to as "functional layers." One or more of these functional layers of the electric heater can be in the form of a thin film by depositing a material on a surface or a substrate.

在微觀尺度上，由於基體表面上存在的形貌體或溝槽，所積設的薄膜可能具有一不均勻表面。所積設之薄膜的一頂表面通常經受一平坦化程序以使該頂表面變平，且提供更為均一性能的功能性層。然而，此平坦化程序可能非為人所欲地從所積設的薄膜移除過多材料，使最終積設的薄膜厚度與其設計厚度有所偏差。並且，當所積設的薄膜為具有一電氣元件嵌置於其中的一介電層時，由於介電層減少厚度緣故，該薄膜的介電體完整性可能被破壞，造成電加熱器的不良性能。On the microscopic scale, the deposited film may have an uneven surface due to the topography or grooves on the surface of the substrate. A top surface of the deposited film is usually subjected to a flattening process to flatten the top surface and provide a functional layer with more uniform performance. However, this flattening process may undesirably remove too much material from the deposited film, causing the final deposited film thickness to deviate from its designed thickness. In addition, when the deposited film has a dielectric layer in which an electrical element is embedded, due to the reduced thickness of the dielectric layer, the dielectric integrity of the film may be damaged, resulting in malfunction of the electric heater performance.

這些有關電加熱器之設計及性能的問題可透過本揭露內容來解決。These problems related to the design and performance of the electric heater can be solved through this disclosure.

在一形態中，提供建構一加熱器之方法。此方法包括以下步驟：形成一經燒結總成，其包括一陶瓷基體及嵌入其中的多個第一料塊(slug)；在該經燒結總成之相對立表面中之一者上形成一功能性元件，使得該功能性元件係連接到該等多個第一料塊；及形成一單石式基體，其中該功能性元件及該等多個第一料塊嵌入在該單石式基體中。In one form, a method of constructing a heater is provided. The method includes the following steps: forming a sintered assembly, which includes a ceramic matrix and a plurality of first slugs embedded therein; forming a functionality on one of the opposed surfaces of the sintered assembly Element such that the functional element is connected to the plurality of first material blocks; and a monolithic substrate is formed, wherein the functional element and the plurality of first material blocks are embedded in the monolithic substrate.

於另一形態中，建構一加熱器之方法包括以下步驟：形成一經燒結總成，其包括一陶瓷基體及嵌入其中的多個第一料塊；形成至少一溝槽到該經燒結總成之相對立表面的一者中且形成到該等多個第一料塊之一部分中；積設一功能性材料到該至少一溝槽中以形成一功能性元件，使得該功能性元件係連接到該等多個第一料塊；在該功能性元件之該等相對立表面中的另一者上施敷一材料層，該材料層連接到該等第一料塊；及形成一單石式基體，其中該功能性元件、該等第一料塊及該材料層嵌置在該單石式基體中。In another form, the method of constructing a heater includes the following steps: forming a sintered assembly including a ceramic base and a plurality of first blocks embedded therein; forming at least one groove to the sintered assembly One of the opposed surfaces and formed into a part of the plurality of first blocks; a functional material is accumulated in the at least one groove to form a functional element, so that the functional element is connected to The plurality of first material blocks; applying a material layer on the other of the opposed surfaces of the functional element, the material layer being connected to the first material blocks; and forming a monolithic form The base body, wherein the functional element, the first material blocks and the material layer are embedded in the monolithic base body.

進一步的應用領域將從本文提供之敘述更為明顯。應了解的是，描述及特定範例係意圖僅供說明目的而不意圖限制本揭露內容之範疇。Further application areas will be more apparent from the description provided in this article. It should be understood that the description and specific examples are intended for illustrative purposes only and not intended to limit the scope of the disclosure.

以下敘述本質上僅為例示且部意圖限制本揭露內容、應用或用途。The following description is merely illustrative in nature and is intended to limit the content, application, or use of the disclosure.

參照圖1，根據本揭露內容之教示所構建的一電加熱器10包括一加熱器層12、一路由層14、設置在加熱器層12與路由層16間的一接合層16、及設置在加熱器層12上的一保護層17。接合層16將加熱器層12接合到路由層14。保護層17電氣絕緣加熱器層12。1, an electric heater 10 constructed according to the teachings of the present disclosure includes a heater layer 12, a routing layer 14, a bonding layer 16 disposed between the heater layer 12 and the routing layer 16, and A protective layer 17 on the heater layer 12. The bonding layer 16 bonds the heater layer 12 to the routing layer 14. The protective layer 17 electrically insulates the heater layer 12.

此加熱器層12包括界定至少一溝槽20的一基體18、及設置在溝槽20中的至少一電阻式加熱元件22。當多個溝槽20形成在基體18中時，多個電阻式加熱元件22可設置在該等多個溝槽20中以界定多個加熱區位。溝槽20可界定多個第一溝槽區段21及具有用於電氣終端之一增大溝槽面積的至少兩個第二溝槽區段24。溝槽20界定約1至10微米的深度，較佳為3至5微米的深度。The heater layer 12 includes a substrate 18 defining at least one trench 20 and at least one resistive heating element 22 disposed in the trench 20. When a plurality of grooves 20 are formed in the base 18, a plurality of resistive heating elements 22 may be disposed in the plurality of grooves 20 to define a plurality of heating zones. The trench 20 may define a plurality of first trench sections 21 and at least two second trench sections 24 for one of the electrical terminals to increase the trench area. The trench 20 defines a depth of about 1 to 10 microns, preferably a depth of 3 to 5 microns.

電阻式加熱元件22包括設置在具有增大溝槽面積之第二溝槽區段24中的至少兩個端接墊26。電阻式加熱元件22具有選自於由鉬、鎢、鉑或其合金組成之群組的一電阻材料。此外，電阻式加熱元件22的電阻材料可具有足夠的電阻溫度係數(TCR)特性，使得電阻加熱元件22可作用為一加熱器及一溫度感測器。The resistance heating element 22 includes at least two terminal pads 26 arranged in the second groove section 24 having an increased groove area. The resistance heating element 22 has a resistance material selected from the group consisting of molybdenum, tungsten, platinum or alloys thereof. In addition, the resistance material of the resistance heating element 22 may have sufficient temperature coefficient of resistance (TCR) characteristics, so that the resistance heating element 22 can function as a heater and a temperature sensor.

加熱器層12更包括與電阻式加熱元件22之端接墊26直接接觸且從端接墊26延伸穿過基體18及接合層16到路由層14的一對端接銷28。The heater layer 12 further includes a pair of terminal pins 28 that are in direct contact with the terminal pad 26 of the resistive heating element 22 and extend from the terminal pad 26 through the base 18 and the bonding layer 16 to the routing layer 14.

路由層14包括界定至少一溝槽32的一基體30、及設置在溝槽32中的一路由元件34。一或多個路由元件34可依據應用設置。路由元件34作用來將加熱器層12之電阻式加熱元件22連接到一外部電源(圖中未顯示)。路由層14之溝槽32可包括至少兩個對應於加熱器層12之溝槽20之第二溝槽區段24的溝槽區段33。路由層14更包括一對端接銷36，其位在至少兩個溝槽區段33中且從路由元件34延伸穿過基體30並超出基體30之一下表面38。路由層14之端接銷36與加熱器層12之端接銷28對齊且接觸。The routing layer 14 includes a base 30 defining at least one trench 32 and a routing element 34 disposed in the trench 32. One or more routing elements 34 can be set according to the application. The routing element 34 functions to connect the resistive heating element 22 of the heater layer 12 to an external power source (not shown in the figure). The trench 32 of the routing layer 14 may include at least two trench sections 33 corresponding to the second trench section 24 of the trench 20 of the heater layer 12. The routing layer 14 further includes a pair of terminal pins 36 located in at least two groove sections 33 and extending from the routing element 34 through the base 30 and beyond a lower surface 38 of the base 30. The terminal pins 36 of the routing layer 14 are aligned with and in contact with the terminal pins 28 of the heater layer 12.

加熱器層12之基體18及路由層14之基體30可包括一陶瓷材料，諸如鋁氮化物及鋁氧化物。The base 18 of the heater layer 12 and the base 30 of the routing layer 14 may include a ceramic material, such as aluminum nitride and aluminum oxide.

參照圖2A至圖2E，建構圖1之電加熱器10之方法100包括製造加熱器層12的子程序(如圖2A至圖2D所示)及製造路由層14之子程序(如圖2E所示)，而後將加熱器層12與路由層14接合在一起(亦顯示於圖2E中)。這兩個子程序可同時或一個接一個執行。2A to 2E, the method 100 for constructing the electric heater 10 of FIG. 1 includes a subroutine for manufacturing the heater layer 12 (as shown in FIGS. 2A to 2D) and a subroutine for manufacturing the routing layer 14 (as shown in FIG. 2E) ), and then the heater layer 12 and the routing layer 14 are joined together (also shown in FIG. 2E). These two subroutines can be executed simultaneously or one after another.

在製造加熱器層12的子程序中，於步驟102中提供呈胚材形式的一基體18。此基體18具有相對立的第一表面40及第二表面42。於步驟104中，一硬罩層46可諸如透過積設被形成在第一表面40上。In the subroutine of manufacturing the heater layer 12, in step 102, a base 18 in the form of a blank is provided. The base 18 has a first surface 40 and a second surface 42 opposite to each other. In step 104, a hard cover layer 46 may be formed on the first surface 40, such as by stacking.

接著，於步驟106中，一光阻層48係積設在硬罩層46上。於步驟108中，光阻層48被蝕刻以在硬罩層46上形成一光阻圖樣50。在此步驟中，用以使光阻層48圖案化的一光罩(圖中未顯示)係置於光阻層48上方，而一紫外(UV)光被施加通過光罩到光阻層48上，以使光阻層48暴露於UV光的部分顯影，而後將光阻層48中曝光的部分或未曝光的部分蝕刻掉以形成光阻圖樣50。此光阻圖樣50可依據光阻層48之曝光的部分或未曝光的部分被蝕刻及移除與否而形成一正型圖樣或一負型圖樣。Next, in step 106, a photoresist layer 48 is deposited on the hard mask layer 46. In step 108, the photoresist layer 48 is etched to form a photoresist pattern 50 on the hard mask layer 46. In this step, a photomask (not shown in the figure) used to pattern the photoresist layer 48 is placed over the photoresist layer 48, and an ultraviolet (UV) light is applied to the photoresist layer 48 through the photomask. Then, the part of the photoresist layer 48 exposed to UV light is developed, and then the exposed or unexposed part of the photoresist layer 48 is etched away to form the photoresist pattern 50. The photoresist pattern 50 can form a positive pattern or a negative pattern depending on whether the exposed or unexposed portion of the photoresist layer 48 is etched and removed.

參照圖2B，於步驟110中，硬罩層46透過使用光阻圖樣50作為遮罩被蝕刻以形成一硬罩圖樣52。之後，於步驟112中，光阻圖樣50被移除，留下硬罩圖樣52在基體18之第一表面40上。此硬罩圖樣52包括至少兩個增大的開口54。2B, in step 110, the hard mask layer 46 is etched by using the photoresist pattern 50 as a mask to form a hard mask pattern 52. After that, in step 112, the photoresist pattern 50 is removed, leaving the hard mask pattern 52 on the first surface 40 of the substrate 18. The hard cover pattern 52 includes at least two enlarged openings 54.

接著，於步驟114中，透過使用遮罩圖樣52作為遮罩來在基體18之第一表面40上執行一蝕刻程序，以於基體18中形成至少一溝槽20。此溝槽20界定多個第一溝槽區段21及具有增大面積的至少兩個第二溝槽區段24。此至少兩個第二溝槽區段24對應於硬罩圖樣52的至少兩個增大開口54。該至少一溝槽20可透過一雷射移除程序、機械加工、3D燒結/列印/積層製造、生胚態(green state)、模製、射流、混合雷射/水、乾式電漿蝕刻來形成。Next, in step 114, an etching process is performed on the first surface 40 of the base 18 by using the mask pattern 52 as a mask to form at least one trench 20 in the base 18. This trench 20 defines a plurality of first trench sections 21 and at least two second trench sections 24 with increased areas. The at least two second groove sections 24 correspond to at least two enlarged openings 54 of the hard cover pattern 52. The at least one groove 20 can be etched by a laser removal process, machining, 3D sintering/printing/layer manufacturing, green state, molding, jet, mixed laser/water, dry plasma etching To form.

於步驟114中，在溝槽20形成於基體18中後，硬罩圖樣52被移除且基體18被清潔，以形成有在基體18之第一表面40上具有所欲溝槽圖案之一溝槽20的基體18。In step 114, after the trench 20 is formed in the base 18, the hard mask pattern 52 is removed and the base 18 is cleaned to form a trench having a desired trench pattern on the first surface 40 of the base 18 The base 18 of the groove 20.

溝槽20的數目和增大之第二溝槽區段24的數目視待形成在溝槽20中之電阻式加熱元件22之加熱區位的數目而定。溝槽20之第一溝槽區段21及第二溝槽區段24的深度及寬度依據電阻式加熱元件22之所欲功能及性能而定。例如，當僅有一個溝槽20形成在基體18中時，溝槽20可具有一固定或變化深度及/或寬度。當多個溝槽20形成在基體18中時，一些溝槽20可較寬而其他的較窄，一些溝槽20可較深而其他的較淺。The number of grooves 20 and the number of enlarged second groove sections 24 depend on the number of heating zones of the resistive heating element 22 to be formed in the groove 20. The depth and width of the first groove section 21 and the second groove section 24 of the groove 20 are determined according to the desired function and performance of the resistive heating element 22. For example, when only one trench 20 is formed in the base 18, the trench 20 may have a fixed or variable depth and/or width. When a plurality of trenches 20 are formed in the base 18, some trenches 20 may be wider and others narrower, and some trenches 20 may be deeper and others shallower.

參照圖2C，於步驟118中，在具有一所欲溝槽圖樣之溝槽20形成在基體18中後，一加工程序在溝槽20之增大的各第二溝槽區段24中執行，以形成一墊開口62及穿過基體18的一穿孔64。墊開口62係設置在穿孔64與增大之第二溝槽區段24間。穿孔64自墊開口62延伸到基體18之第二表面42。2C, in step 118, after a groove 20 having a desired groove pattern is formed in the base 18, a processing procedure is performed in each enlarged second groove section 24 of the groove 20, In order to form a pad opening 62 and a through hole 64 passing through the base 18. The pad opening 62 is provided between the through hole 64 and the enlarged second groove section 24. The through hole 64 extends from the pad opening 62 to the second surface 42 of the base 18.

之後，於步驟122中，一電阻式材料66係設置在基體18之第一表面40上且於溝槽20中。作為一範例，電阻式材料66可形成在基體18上及在溝槽20中。After that, in step 122, a resistive material 66 is disposed on the first surface 40 of the base 18 and in the trench 20. As an example, the resistive material 66 may be formed on the substrate 18 and in the trench 20.

電阻式材料66在步驟124中係經熱處理。作為一範例，具有設置在溝槽20中及基體18之第一表面40上之電阻式材料66的基體18可被置於一熱爐中來退火。The resistive material 66 is heat-treated in step 124. As an example, the base 18 with the resistive material 66 disposed in the trench 20 and on the first surface 40 of the base 18 may be placed in a hot furnace to be annealed.

參照圖2D，於步驟126中，在電阻式材料66經熱處理後，在電阻式材料66上執行一化學機械拋光/平坦化(CMP)程序以移除過多的電阻式材料66，直到基體18之第一表面40暴露為止，藉此在溝槽20中形成一電阻式加熱元件22。於此步驟中，基體18之第一表面40被暴露出來且沒有被任何電阻材料66所覆蓋。留在溝槽20中的電阻材料66形成具有與基體18之第一表面40齊平之一頂表面67的電阻式加熱元件22。2D, in step 126, after the resistive material 66 is heat-treated, a chemical mechanical polishing/planarization (CMP) process is performed on the resistive material 66 to remove excess resistive material 66 until the substrate 18 Until the first surface 40 is exposed, a resistive heating element 22 is formed in the trench 20. In this step, the first surface 40 of the substrate 18 is exposed and is not covered by any resistive material 66. The resistive material 66 remaining in the trench 20 forms a resistive heating element 22 having a top surface 67 that is flush with the first surface 40 of the substrate 18.

最後，於步驟128中，一保護層17係形成在基體18之第一表面40及電阻式加熱元件22之頂表面67上。此保護層17電氣絕緣電阻式加熱元件22。該保護層17可藉由將一預成形保護層接合到基體18而形成在基體18上。此接合程序可為一硬焊(brazing)程序或一玻璃熔質接合。替代地，當多個溝槽20形成在基體18中時，一些溝槽20，較佳為設置環繞基體18周邊的溝槽，可以一接合劑填充，致使一些溝槽20中的接合劑可將基體18接合到保護層17。在保護層17形成在基體18上後，一加熱器層12即完成。Finally, in step 128, a protective layer 17 is formed on the first surface 40 of the substrate 18 and the top surface 67 of the resistive heating element 22. This protective layer 17 electrically insulates the resistance heating element 22. The protective layer 17 can be formed on the base 18 by joining a pre-shaped protective layer to the base 18. The joining procedure can be a brazing procedure or a glass melt joining. Alternatively, when a plurality of trenches 20 are formed in the base 18, some trenches 20, preferably provided around the periphery of the base 18, can be filled with a bonding agent, so that the bonding agent in some trenches 20 can The base 18 is joined to the protective layer 17. After the protective layer 17 is formed on the substrate 18, a heater layer 12 is completed.

如先前所述，溝槽20之深度及寬度可被組配成沿溝槽20之長度變動。配合變動的深度及寬度，溝槽20允許電阻式加熱元件22沿其長度形成有變化的厚度及寬度，藉此得到沿電阻式加熱元件22之長度的可變瓦特數。並且，透過使用溝槽20來決定電阻式加熱元件22的形狀，可以在相同溝槽之不同部分中積設不同材料，或在相同溝槽20中積設二或更多材料層。例如，一電阻材料可先被積設在溝槽20中，而後在該電阻材料之頂部上積設一接合劑。因此，溝槽20中的材料亦可用作一接合劑以於其上接合一保護層。經設計建構的層體或經摻雜的材料亦可積設在溝槽20之不同部分中，以得到沿其長度具有不同材料特性的一電阻式加熱元件。As mentioned earlier, the depth and width of the trench 20 can be configured to vary along the length of the trench 20. In accordance with the varying depth and width, the groove 20 allows the resistance heating element 22 to be formed with varying thickness and width along its length, thereby obtaining a variable wattage along the length of the resistance heating element 22. Moreover, by using the trench 20 to determine the shape of the resistive heating element 22, different materials can be deposited in different parts of the same trench, or two or more material layers can be deposited in the same trench 20. For example, a resistive material can be deposited in the trench 20 first, and then a bonding agent can be deposited on top of the resistive material. Therefore, the material in the trench 20 can also be used as a bonding agent to bond a protective layer thereon. Designed and constructed layers or doped materials can also be accumulated in different parts of the trench 20 to obtain a resistive heating element with different material characteristics along its length.

參照圖2E，製造一路由層14之子程序包括與如先前所述之製造一加熱器層12之步驟類似的步驟，不過製造一路由層14之子程序包括加工一穿過路由材料之穿孔的步驟但不包括接合一保護層之步驟。此外，由於加熱器層12及路由層14具有不同功能，故形成電阻式加熱元件22及路由元件34的材料不同。2E, the subroutine for manufacturing a routing layer 14 includes steps similar to the steps for manufacturing a heater layer 12 as previously described, but the subroutine for manufacturing a routing layer 14 includes the step of processing a perforation through the routing material but Does not include the step of bonding a protective layer. In addition, since the heater layer 12 and the routing layer 14 have different functions, the materials forming the resistive heating element 22 and the routing element 34 are different.

更特定來說，製造路由層14之子程序包括與先前連同圖2A至圖2D所述之步驟102到步驟126類似的數個步驟。因此，這些步驟的詳細描述在此為簡明而省略。填充在路由層14之溝槽32中的材料不同於填充在加熱器層12之溝槽20中的材料。加熱器層12係組配來產生熱，因而填充在基體18之溝槽20中的材料為具有相當高電阻率以生成熱的一電阻材料。於路由層14中，填充在基體30之溝槽32中的材料為具有相當高傳導性的一傳導材料，以將加熱器層12之電阻式加熱元件22電氣連接到一外部電源。More specifically, the subroutine for manufacturing the routing layer 14 includes several steps similar to the steps 102 to 126 previously described in conjunction with FIGS. 2A to 2D. Therefore, the detailed description of these steps is omitted here for conciseness. The material filled in the trench 32 of the routing layer 14 is different from the material filled in the trench 20 of the heater layer 12. The heater layer 12 is assembled to generate heat, so the material filled in the groove 20 of the base 18 is a resistive material with a relatively high resistivity to generate heat. In the routing layer 14, the material filled in the trench 32 of the substrate 30 is a conductive material with relatively high conductivity to electrically connect the resistive heating element 22 of the heater layer 12 to an external power source.

此外，路由層14之基體30具有一溝槽32，其具有不同於加熱器層12之基體18之溝槽20的溝槽圖樣。如圖2E中所示，路由層14之溝槽32顯示成比加熱器層12之溝槽20更寬。In addition, the base 30 of the routing layer 14 has a groove 32 having a groove pattern different from the groove 20 of the base 18 of the heater layer 12. As shown in FIG. 2E, the trenches 32 of the routing layer 14 are shown to be wider than the trenches 20 of the heater layer 12.

參照圖2E，於步驟130中，路由材料經熱處理及平坦化以形成一路由元件34。在此步驟中，基體30之頂表面與路由元件34之頂表面齊平。類似於加熱器層12，路由層14包括連接到路由元件34之至少兩個部分的一對端接銷36及一對端接端部69。2E, in step 130, the routing material is heat-treated and planarized to form a routing element 34. In this step, the top surface of the base 30 and the top surface of the routing element 34 are flush. Similar to the heater layer 12, the routing layer 14 includes a pair of termination pins 36 and a pair of termination ends 69 connected to at least two portions of the routing element 34.

接著，路由元件34經加工以界定自路由元件34之頂表面延伸到端接端部69的一對穿孔68。之後，加熱器層12被置於路由層14之頂部上。加熱器層12中延伸超過基體18之第二表面42的端接銷28被***穿孔68，致使加熱器層12之端接銷28與路由層14之端接端部69接觸。因此，加熱器層12之電阻式加熱元件22係電氣連接至路由元件34，因而電氣連接到一外部電源。Next, the routing element 34 is processed to define a pair of perforations 68 extending from the top surface of the routing element 34 to the termination end 69. After that, the heater layer 12 is placed on top of the routing layer 14. The terminal pins 28 in the heater layer 12 that extend beyond the second surface 42 of the base 18 are inserted into the through holes 68 so that the terminal pins 28 of the heater layer 12 and the terminal ends 69 of the routing layer 14 are in contact with each other. Therefore, the resistive heating element 22 of the heater layer 12 is electrically connected to the routing element 34 and thus to an external power source.

參照圖3，描述製造根據本揭露內容之教示之一電加熱器的方法200之一變型。此方法可應用來形成另一電氣組件，諸如一靜電卡盤的一電極層、及一RF天線層，取決於填充基體之溝槽中的功能性材料類型。3, a modification of the method 200 for manufacturing an electric heater according to the teachings of the present disclosure is described. This method can be applied to form another electrical component, such as an electrode layer of an electrostatic chuck, and an RF antenna layer, depending on the type of functional material filled in the trenches of the substrate.

方法200始於在步驟202中提供一基體70及形成至少一溝槽72到基體70中。基體70可包括鋁氮化物。於此步驟中，該至少一溝槽可藉由一機械方法形成，所述機械方法為諸如雷射移除/切割程序、微珠噴擊、機械加工、3D燒結/列印/積層製造、生胚態、模製、射流、混合雷射/水或乾式電漿蝕刻，而無使用一硬罩圖樣。當使用一微珠噴擊程序時，珠粒的粒體尺寸小於100 μm，較佳小於50 μm。The method 200 starts by providing a base 70 and forming at least one trench 72 into the base 70 in step 202. The base 70 may include aluminum nitride. In this step, the at least one groove can be formed by a mechanical method such as laser removal/cutting procedures, bead spraying, machining, 3D sintering/printing/layer manufacturing, production Embryonic, molded, jet, mixed laser/water or dry plasma etching without using a hard mask pattern. When using a microbead spraying procedure, the particle size of the beads is less than 100 μm, preferably less than 50 μm.

接著，於步驟204中，包括一第一金屬的一第一功能性材料74係填充在溝槽72中及在基體70之一頂表面上。此第一功能性材料74可透過一分層程序形成，其涉及使用與厚膜、薄膜、熱噴塗或凝膠等等相關聯的程序來施敷或積聚一材料到一基體或另一層體上。替代地，利用一硬銲回流程序，第一功能性材料74可被積設在基體70上及溝槽72中，如先前配合圖2C之步驟122所述地。例如，第一功能性材料74可透過將一金屬箔置於基體70上，而後透過熔化該金屬箔致使經熔化的材料可填充溝槽72且回流至該基體之一頂表面來形成。Next, in step 204, a first functional material 74 including a first metal is filled in the trench 72 and on a top surface of the base 70. The first functional material 74 can be formed through a layering process, which involves using a process associated with thick film, thin film, thermal spraying, or gel, etc., to apply or accumulate a material on a substrate or another layer. . Alternatively, using a brazing reflow process, the first functional material 74 can be deposited on the base 70 and in the trench 72, as previously described in conjunction with step 122 of FIG. 2C. For example, the first functional material 74 can be formed by placing a metal foil on the substrate 70 and then melting the metal foil so that the molten material can fill the trench 72 and flow back to a top surface of the substrate.

接著，類似於配合圖2C所述之步驟124，於步驟204中，第一功能性材料74可經熱處理，諸如透過退火。之後，於步驟206中，過多的第一功能性材料74自基體70移除，藉此留下在基體70之至少一溝槽72內的第一功能性材料74，以形成一第一功能性元件76。此移除程序可為一化學機械程序(CMP)、蝕刻或拋光。而後，於步驟208中，一介電層78被積設在第一功能性元件76上方及基體70上方。Next, similar to step 124 described in conjunction with FIG. 2C, in step 204, the first functional material 74 may be heat-treated, such as through annealing. After that, in step 206, the excess first functional material 74 is removed from the base 70, thereby leaving the first functional material 74 in the at least one groove 72 of the base 70 to form a first functional material. Element 76. The removal process can be a chemical mechanical process (CMP), etching or polishing. Then, in step 208, a dielectric layer 78 is deposited on the first functional element 76 and on the substrate 70.

接著，於步驟210中，至少一通孔79在至少兩個對應位置處穿過介電層78形成，以暴露出第一功能性元件76之一部分。此通孔79可包括一穿孔80及一溝槽82。此步驟包括在介電層78中形成一溝槽82之步驟、及形成一穿孔80穿過介電層78及到第一功能性元件76中的步驟。此溝槽82可在穿孔80形成之前或之後形成。通孔79可藉由雷射切割來形成。溝槽82可具有範圍大略在100 nm至100 μm的一深度。Next, in step 210, at least one through hole 79 is formed through the dielectric layer 78 at at least two corresponding positions to expose a part of the first functional element 76. The through hole 79 may include a through hole 80 and a groove 82. This step includes a step of forming a trench 82 in the dielectric layer 78 and a step of forming a through hole 80 through the dielectric layer 78 and into the first functional element 76. The trench 82 may be formed before or after the through hole 80 is formed. The through hole 79 can be formed by laser cutting. The trench 82 may have a depth in the range of roughly 100 nm to 100 μm.

於步驟212中，一第二功能性材料84被積設到通孔79中，包括穿孔80及溝槽82，且積設在介電層78之一頂表面，致使第二功能性元件84與第一功能性元件76接觸。In step 212, a second functional material 84 is deposited in the through hole 79, including the through hole 80 and the trench 82, and is deposited on a top surface of the dielectric layer 78, so that the second functional element 84 and The first functional element 76 contacts.

於步驟214中，過多的第二功能材料84自介電層78移除，藉此留下第二功能性材料84在通孔79內，以形成對第一功能性元件76的電氣終端。於此步驟中，留在溝槽80中的第二功能性材料84形成一第二功能性元件86。第二功能性材料84之頂表面在移除步驟之後與介電層78之頂表面齊平。替代地，第二功能性材料84可被蝕刻以形成一所欲輪廓。In step 214, the excessive second functional material 84 is removed from the dielectric layer 78, thereby leaving the second functional material 84 in the through hole 79 to form an electrical terminal to the first functional element 76. In this step, the second functional material 84 remaining in the trench 80 forms a second functional element 86. The top surface of the second functional material 84 is flush with the top surface of the dielectric layer 78 after the removal step. Alternatively, the second functional material 84 may be etched to form a desired contour.

當方法200被用來形成一電加熱器時，第一功能性元件76可為一電阻式加熱元件，且第二功能性元件86可為用以將電阻式加熱元件連接到一外部電源的一路由元件。當方法200被用來形成一靜電卡盤之一電極層時，第一功能性元件76可為一電極元件，且第二功能性元件86可為用以將電極元件連接到一外部電源的一路由元件。When the method 200 is used to form an electric heater, the first functional element 76 can be a resistive heating element, and the second functional element 86 can be a resistor for connecting the resistive heating element to an external power source. Routing element. When the method 200 is used to form an electrode layer of an electrostatic chuck, the first functional element 76 can be an electrode element, and the second functional element 86 can be an electrode element for connecting the electrode element to an external power source. Routing element.

替代地，第一功能性元件76可被組配成一路由元件，而第二功能性元件可被組配成一電阻式加熱元件或一電極元件。在此情況中，穿孔80可被填充有與第一功能性元件76相同的材料或用於一所欲導電性的不同材料。Alternatively, the first functional element 76 can be assembled as a routing element, and the second functional element can be assembled as a resistive heating element or an electrode element. In this case, the through hole 80 can be filled with the same material as the first functional element 76 or a different material for a desired conductivity.

而後且可選地，一第一柱孔90或一第二柱孔92可形成在步驟216中。第一柱孔90延伸穿過介電層92及下方的第一功能性元件76。第二柱孔92延伸穿過第二功能性元件86。第一柱孔90及第二柱孔92可透過一雷射切割程序或一珠粒噴擊程序來形成。Then and optionally, a first pillar hole 90 or a second pillar hole 92 may be formed in step 216. The first pillar hole 90 extends through the dielectric layer 92 and the first functional element 76 below. The second post hole 92 extends through the second functional element 86. The first column hole 90 and the second column hole 92 can be formed by a laser cutting process or a bead spraying process.

額外的端接銷(圖中未顯示)可被***第一柱孔90及/或第二柱孔92用以將第一功能性元件76及/或第二功能性元件86連接到另一電氣組件，諸如另一加熱器層、一調諧層、一溫度感測層、一冷卻層、一電極層、及/或一RF天線層。因此，額外的加熱器層、調諧層、冷卻層、電極層或RF天線層可被連接到同一路由元件及一外部電源。此額外的加熱器層、調諧層、冷卻層、電極層或RF天線層可由配合圖2A至圖3描述的方法100或200製造。Additional terminal pins (not shown in the figure) can be inserted into the first post hole 90 and/or the second post hole 92 to connect the first functional element 76 and/or the second functional element 86 to another electrical Components, such as another heater layer, a tuning layer, a temperature sensing layer, a cooling layer, an electrode layer, and/or an RF antenna layer. Therefore, additional heater layers, tuning layers, cooling layers, electrode layers or RF antenna layers can be connected to the same routing element and an external power source. This additional heater layer, tuning layer, cooling layer, electrode layer or RF antenna layer can be manufactured by the method 100 or 200 described in conjunction with FIGS. 2A to 3.

參照配合圖2A至圖2E描述的方法100，雖然本揭露內容之方法已描述包括製造加熱器層12及路由層14的子程序，但此方法100可包括利用類似步驟製造額外一或多個電氣組件的額外一或多個子程序。例如，方法100可更包括用以製造另一加熱器層、調諧層、冷卻層、電極層及RF天線層等的一子程序。Referring to the method 100 described in conjunction with FIGS. 2A to 2E, although the method of the present disclosure has been described as including subroutines for manufacturing the heater layer 12 and the routing layer 14, the method 100 may include the use of similar steps to manufacture additional one or more electrical components. One or more additional subroutines of the component. For example, the method 100 may further include a subroutine for manufacturing another heater layer, tuning layer, cooling layer, electrode layer, and RF antenna layer.

替代地，製造加熱器層12的子程序可被用來藉由填充一不同材料到溝槽中而形成另一電氣組件。例如，若一帕爾帖(Peltier)材料填入基體之溝槽中，則一冷卻層可被形成。若一電極材料填入溝槽中，則用於一靜電卡盤的一電極層可被形成。若一合適RF天線材料填入溝槽中，則一RF天線層可被形成。若具有相當低導熱性之一材料填入溝槽中，則一熱障蔽層可被形成。若具有相當高導熱性之一材料填入溝槽中，則一熱散布層可被形成。Alternatively, the subroutine for manufacturing the heater layer 12 can be used to form another electrical component by filling a different material into the trench. For example, if a Peltier material is filled in the grooves of the substrate, a cooling layer can be formed. If an electrode material is filled in the trench, an electrode layer for an electrostatic chuck can be formed. If a suitable RF antenna material is filled in the trench, an RF antenna layer can be formed. If a material with relatively low thermal conductivity is filled in the trench, a thermal barrier layer can be formed. If a material with relatively high thermal conductivity is filled in the trench, a heat spreading layer can be formed.

透過本揭露內容之方法100、200所製造的電加熱器10具有一嵌入式加熱電路與一嵌入式路由電路、及遍及基體更為平坦的多個功能性層。因此，電加熱器可具有一更為均一的結構及更為一致的加熱性能。The electric heater 10 manufactured by the methods 100 and 200 of the present disclosure has an embedded heating circuit and an embedded routing circuit, and a plurality of functional layers that are flatter throughout the substrate. Therefore, the electric heater can have a more uniform structure and a more consistent heating performance.

參照圖4，根據本揭露內容之教示構建的一支撐基座300包括一板總成302、及經由一接合形貌體306接合到板總成302的一管狀桿304。支撐基座300係組配來於半導體處理時支撐一晶圓於其上。板總成302可呈電加熱器、靜電卡盤或包括一陶瓷基體及嵌置於該陶瓷基體中之一功能性元件之任何裝置的形式。Referring to FIG. 4, a support base 300 constructed according to the teachings of the present disclosure includes a plate assembly 302 and a tubular rod 304 joined to the plate assembly 302 via a joining profile 306. The support base 300 is assembled to support a wafer on it during semiconductor processing. The board assembly 302 can be in the form of an electric heater, an electrostatic chuck, or any device that includes a ceramic substrate and a functional element embedded in the ceramic substrate.

於例示型態下，板總成302為一電加熱板，且包括一陶瓷基體308、一電阻式加熱元件310、及一路由元件312。電阻式加熱元件310及路由元件312係嵌入在陶瓷基體308中。陶瓷基體308為透過熱壓形成的一單石式基體，且可以一陶瓷材料製成，諸如氮化鋁(AlN)及氧化鋁(Al2 O3 )。板總成302更包括多個第一終端部分314，其用以將電阻式加熱元件310連接到路由元件312；及一對第二終端部分316，其設置鄰近路由元件312之一中心部分。一對引線318係連接到第二終端部分316，且在管狀桿304內延伸用以將路由元件316連接到一外部電源(圖中未顯示)。第一終端部分314的數量依據由電阻式加熱元件310界定之加熱區位的數量而定。In the illustrated form, the plate assembly 302 is an electric heating plate, and includes a ceramic substrate 308, a resistive heating element 310, and a routing element 312. The resistance heating element 310 and the routing element 312 are embedded in the ceramic base 308. The ceramic base 308 is a monolithic base formed by hot pressing, and can be made of a ceramic material, such as aluminum nitride (AlN) and aluminum oxide (Al 2 O 3 ). The board assembly 302 further includes a plurality of first terminal portions 314 for connecting the resistive heating element 310 to the routing element 312; and a pair of second terminal portions 316 disposed adjacent to a central portion of the routing element 312. A pair of lead wires 318 are connected to the second terminal portion 316 and extend inside the tubular rod 304 to connect the routing element 316 to an external power source (not shown in the figure). The number of the first terminal portions 314 depends on the number of heating zones defined by the resistance heating element 310.

電阻式加熱元件310係由具有相當高電阻率之一電阻性材料製成，諸如選自於由下列項目組成之群組的材料：鉬、鎢、鉑或其合金，用以產生熱。此外，電阻式加熱元件310之電阻性材料可具有足夠的電阻溫度係數(TCR)特性，使得電阻式加熱元件22作用為一加熱器及一溫度感測器。路由元件312由具有相當高傳導性之一傳導材料製成，用以將電阻式加熱元件310電氣連接到一外部電源。The resistance heating element 310 is made of a resistive material having a relatively high resistivity, such as a material selected from the group consisting of molybdenum, tungsten, platinum or alloys thereof, to generate heat. In addition, the resistive material of the resistance heating element 310 may have sufficient temperature coefficient of resistance (TCR) characteristics, so that the resistance heating element 22 functions as a heater and a temperature sensor. The routing element 312 is made of a conductive material with relatively high conductivity, and is used to electrically connect the resistive heating element 310 to an external power source.

應了解的是，當板總成302係形成為一靜電卡盤時，取代電阻式加熱元件的一電極元件可被形成。It should be understood that when the plate assembly 302 is formed as an electrostatic chuck, an electrode element can be formed instead of the resistive heating element.

參照圖5A至圖5D，繪出製造支撐基座300之方法400。此方法400始於在步驟402中將多個料塊置於一熱等均壓腔室450內，及將該等多個料塊與腔室工具(圖中未顯示)對準。此等多個料塊可包括多個第一料塊452及一對第二料塊454。第二料塊454具有較第一料塊403短的一長度，且係設置鄰近熱等均壓腔室450的一中心部分。於接續步驟中，第一料塊452及第二料塊454將分別形成到第一終端部分314及第二終端部分316 (顯示於圖4)中。5A to 5D, a method 400 of manufacturing the support base 300 is depicted. The method 400 starts with placing a plurality of material blocks in a hot isostatic pressure chamber 450 in step 402, and aligning the plurality of material blocks with a chamber tool (not shown in the figure). The plurality of material blocks may include a plurality of first material blocks 452 and a pair of second material blocks 454. The second material block 454 has a shorter length than the first material block 403 and is disposed adjacent to a central part of the thermal isostatic pressure chamber 450. In the subsequent step, the first material block 452 and the second material block 454 will be formed into the first terminal part 314 and the second terminal part 316 (shown in FIG. 4), respectively.

接著，於步驟404中，熱等均壓腔室450 (僅顯示於步驟402)填充有陶瓷粉末455，諸如AlN粉末。而後，於步驟406中，陶瓷粉末455及第一料塊452與第二料塊454在熱等均壓腔室450中經受一熱壓程序，以形成一經燒結總成456。熱壓被稱為一高壓、低應變率粉末冶金程序，用以在高達能引發燒結及潛變程序之一溫度下形成一粉末壓製體。此可藉由熱及壓力的同時施加來達成。在經燒結總成456中，第一料塊452及第二料塊454經加壓、燒結而嵌置於一陶瓷基體457中。經燒結總成456具有一第一表面458及一第二表面460。第一料塊452從第一表面458延伸到第二表面460，且自第一表面458及第二表面460暴露出來。第二料塊454僅於第二表面460暴露出來。研磨(lapping)可被施用在經燒結總成456上，以達到一高度表面平坦性及平行性。Next, in step 404, the thermal isostatic pressure chamber 450 (only shown in step 402) is filled with ceramic powder 455, such as AlN powder. Then, in step 406, the ceramic powder 455 and the first material block 452 and the second material block 454 are subjected to a hot pressing process in the hot isostatic pressure chamber 450 to form a sintered assembly 456. Hot pressing is known as a high-pressure, low-strain-rate powder metallurgy process to form a powder compact at a temperature as high as one of the sintering and creep processes can be initiated. This can be achieved by simultaneous application of heat and pressure. In the sintered assembly 456, the first material block 452 and the second material block 454 are pressed and sintered to be embedded in a ceramic base 457. The sintered assembly 456 has a first surface 458 and a second surface 460. The first block 452 extends from the first surface 458 to the second surface 460 and is exposed from the first surface 458 and the second surface 460. The second material block 454 is only exposed on the second surface 460. Lapping can be applied to the sintered assembly 456 to achieve a high degree of surface flatness and parallelism.

參照圖5B，於步驟408中，至少一溝槽462形成在經燒結總成456中。溝槽462係沿第一表面458形成，且形成到第一料塊452中。溝槽462在平面圖可具有一蜿蜒組態。該至少一溝槽462可藉由一機械方法形成，諸如一雷射移除/切割程序、微珠噴擊、機械加工、3D燒結/列印/積層製造、生胚態、模製、射流、混合雷射/水或乾式電漿蝕刻。溝槽460並沒有延伸到第二料塊454中。當想要多個加熱區位時，可形成多個溝槽460以形成對應於該等多個加熱區位的多個電阻式加熱元件310。5B, in step 408, at least one trench 462 is formed in the sintered assembly 456. The groove 462 is formed along the first surface 458 and formed into the first block 452. The trench 462 may have a serpentine configuration in plan view. The at least one groove 462 can be formed by a mechanical method, such as a laser removal/cutting process, bead spraying, machining, 3D sintering/printing/layer manufacturing, green embryo, molding, jet, Mixed laser/water or dry plasma etching. The groove 460 does not extend into the second block 454. When multiple heating locations are desired, multiple trenches 460 can be formed to form multiple resistance heating elements 310 corresponding to the multiple heating locations.

接著，於步驟410中，一功能性材料464係施敷到經燒結總成456之第一表面458上，以填充溝槽462及覆蓋整個第一表面458。此功能性材料464可藉由沉積或濺鍍或任何便利的方法來施敷。替代地，功能性材料462可藉由一分層程序來形成，此程序涉及使用與厚膜、薄膜、熱噴塗或凝膠等相關聯之方法，將一材料施敷或積聚在基體或另一層體上。替代地，功能性材料462可利用一硬銲回流程序積設在經燒結總成456上及溝槽462中。例如，功能性材料464可透過將一金屬箔置於經燒結總成465之第一表面458上，而後透過熔化該金屬箔致使經熔化的材料可填充溝槽462且回流至經燒結總成456之第一表面458來形成。Next, in step 410, a functional material 464 is applied to the first surface 458 of the sintered assembly 456 to fill the grooves 462 and cover the entire first surface 458. The functional material 464 can be applied by deposition or sputtering or any convenient method. Alternatively, the functional material 462 can be formed by a layering process, which involves applying or accumulating a material on a substrate or another layer using methods associated with thick film, thin film, thermal spraying or gel, etc. Physically. Alternatively, the functional material 462 can be deposited on the sintered assembly 456 and in the groove 462 using a brazing reflow process. For example, the functional material 464 can be achieved by placing a metal foil on the first surface 458 of the sintered assembly 465, and then by melting the metal foil so that the molten material can fill the groove 462 and flow back to the sintered assembly 456 The first surface 458 is formed.

功能性材料464可為具有相當高電阻率之一電阻性材料，諸如鉬、鎢、鉑或其合金。若想要一靜電卡盤，則功能性材料464可為一適用於電極的材料。接著，於步驟412中，在功能性材料464上執行一平坦化程序，以移除過多的功能性材料，直到第一表面458暴露出來為止，藉此在溝槽20中形成一功能性元件。於此形態下，該功能性元件為一電阻式加熱元件310，其連接至第一料塊452。此平坦化程序可為一化學機械拋光/平坦化(CMP)程序、蝕刻、拋光。The functional material 464 may be a resistive material having a relatively high resistivity, such as molybdenum, tungsten, platinum or alloys thereof. If an electrostatic chuck is desired, the functional material 464 can be a material suitable for electrodes. Next, in step 412, a planarization process is performed on the functional material 464 to remove excess functional material until the first surface 458 is exposed, thereby forming a functional element in the trench 20. In this form, the functional element is a resistance heating element 310 which is connected to the first material block 452. The planarization process can be a chemical mechanical polishing/planarization (CMP) process, etching, and polishing.

而後，於步驟414中，一經燒結基體部分470係置於熱等均壓腔室450中，且經燒結總成456係置於第二經燒結板470之頂部，而電阻式加熱元件310係設置鄰近經燒結基體部分470。替代地，取代使用一經燒結基體部分470，依據應用可使用具有另外功能性元件嵌置於其中的另一經燒結總成來接合到經燒結總成456。可選地，AlN粉末和燒結助劑(aide)的一混合物472可被施敷在經燒結總成456與經燒結基體部分470之間，以利於將經燒結總成456接合到經燒結基體部分470。Then, in step 414, a sintered base part 470 is placed in the thermal isostatic pressure chamber 450, and the sintered assembly 456 is placed on top of the second sintered plate 470, and the resistance heating element 310 is placed Adjacent to the sintered base portion 470. Alternatively, instead of using a sintered base portion 470, another sintered assembly with additional functional components embedded therein may be used to join to the sintered assembly 456 depending on the application. Optionally, a mixture 472 of AlN powder and a sintering aid (aide) may be applied between the sintered assembly 456 and the sintered base portion 470 to facilitate joining the sintered assembly 456 to the sintered base portion 470.

參照圖5C，於步驟416中，一材料層476係形成在經燒結總成456之第二表面460上，以將第一料塊(變成第一終端部分314)連接到第二料塊(變成第二終端部分316)。此材料層476可呈一箔體形式且置於第二表面460之頂部上，或可藉由沉積形成在第二表面460上。該材料層476具有約5 mil (0.127 mm)的厚度。在材料層476形成在經燒結總成456之第二表面460上後，等均壓腔室450係以AlN粉末及燒結助劑的另外混合物478填充。5C, in step 416, a material layer 476 is formed on the second surface 460 of the sintered assembly 456 to connect the first material block (which becomes the first terminal portion 314) to the second material block (which becomes The second terminal part 316). This material layer 476 may be in the form of a foil and placed on top of the second surface 460, or may be formed on the second surface 460 by deposition. The material layer 476 has a thickness of about 5 mil (0.127 mm). After the material layer 476 is formed on the second surface 460 of the sintered assembly 456, the isostatic chamber 450 is filled with another mixture 478 of AlN powder and a sintering aid.

接著，於步驟418中，經燒結總成456、經燒結基體部分470、及AlN粉末與燒結助劑的混合物478在等均壓腔室450中經受一熱壓程序。單一的單石式基體308因而形成，其中嵌置有電阻式加熱元件310、路由元件312 (即材料層476)、第一終端314與第二終端316 (即第一料塊452、第二料塊454)。Then, in step 418, the sintered assembly 456, the sintered base portion 470, and the mixture 478 of AlN powder and sintering aid are subjected to a hot pressing process in the isostatic pressure chamber 450. A single monolithic substrate 308 is thus formed, in which are embedded resistive heating element 310, routing element 312 (i.e. material layer 476), first terminal 314 and second terminal 316 (i.e. first material block 452, second material Block 454).

而後，於步驟420中，穿過單石式陶瓷基體308鑽出洞孔480，以允許接達第二終端部分316。Then, in step 420, a hole 480 is drilled through the monolithic ceramic base 308 to allow access to the second terminal portion 316.

最後，於步驟422中，引線318被***洞孔480並接合到第二終端部分316，且一管狀桿304係透過一接合形貌體306接合到單石式陶瓷基體308以完成支撐基座300。Finally, in step 422, the lead wire 318 is inserted into the hole 480 and joined to the second terminal portion 316, and a tubular rod 304 is joined to the monolithic ceramic base 308 through a joining feature 306 to complete the support base 300 .

接合形貌體306可包括一溝槽，其填充有一鋁材料以利於管狀桿304對板總成302的接合。此接合形貌體已描述於讓渡給本申請人之共同審理的申請案，即2018年4月17日申請之名為「具有接合溝槽之陶瓷鋁總成」的美國第 15/955,431號申請案，其內容整個以參考方式併入本文。The joining feature 306 may include a groove filled with an aluminum material to facilitate the joining of the tubular rod 304 to the plate assembly 302. This joint topography has been described in the joint trial application assigned to the applicant, that is, US No. 15/955,431 named "Ceramic Aluminum Assembly with Joint Groove" filed on April 17, 2018 The entire content of the application is incorporated herein by reference.

於此形態中，沒有穿孔需要被形成穿過陶瓷基體。電阻式加熱元件310係藉由呈塊體形式之第一終端部分連接到路由元件312。此路由元件可為一金屬箔。因此，有多種材料可供選用來形成路由元件及第一終端部分，以提供良好導電性連同降低的阻值。透過形成一溝槽以容納功能性材料，電阻式加熱元件可變得極薄，以增加電阻式加熱元件的阻值。In this configuration, no perforations need to be formed through the ceramic substrate. The resistance heating element 310 is connected to the routing element 312 by a first terminal part in the form of a block. The routing element can be a metal foil. Therefore, a variety of materials are available for forming the routing element and the first terminal portion to provide good conductivity and reduced resistance. By forming a groove to accommodate the functional material, the resistance heating element can be made extremely thin to increase the resistance value of the resistance heating element.

應了解的是，本揭露內容不限於描述及說明作為範例的形式。大量的修改已被描述且更多為熟習此技藝者之知識的一部分。此等修改及進一步的修改與任何技術等效物的替代可在不脫離本揭露內容及本專利案之保護範疇下加到說明書及圖式中。It should be understood that the content of the disclosure is not limited to the form of description and explanation as an example. A large number of modifications have been described and are more of a part of the knowledge of those who are familiar with the art. These modifications and further modifications and the substitution of any technical equivalents can be added to the description and drawings without departing from the scope of the disclosure and the protection of this patent.

10:電加熱器 12:加熱器層 14:路由層 16:接合層 17:保護層 18、30、70:基體 20、32、72、82、460、462:溝槽 21:第一溝槽區段 22、310:電阻式加熱元件 24:第二溝槽區段 26:端接墊 28、36:端接銷 33:溝槽區段 34、312:路由元件 38:下表面 40、458:第一表面 42、460:第二表面 46:硬罩層 48:光阻層 50:光阻圖樣 52:硬罩圖樣 54:開口 62:墊開口 64、68、80:穿孔 66:電阻式材料 67:頂表面 69:端接端部 74:第一功能性材料 76:第一功能性元件 78:介電層 79:通孔 84:第二功能性材料 86:第二功能性元件 90:第一柱孔 92:第二柱孔 100、400:方法 102~118、122~134、202~216、402~422:步驟 300:支撐基座 302:板總成 304:管狀桿 306:接合形貌體 308:(單石式)陶瓷基體；單石式基體 314:第一終端(部分) 316:第二終端(部分) 318:引線 450:(熱)等均壓腔室 452:第一料塊 454:第二料塊 455:陶瓷粉末 456:經燒結總成 457:陶瓷基體 464:功能性材料 470:經燒結基體部分；第二經燒結板 472、478:混合物 476:材料層 480:洞孔10: Electric heater 12: heater layer 14: routing layer 16: Bonding layer 17: protective layer 18, 30, 70: matrix 20, 32, 72, 82, 460, 462: groove 21: The first groove section 22, 310: resistance heating element 24: Second groove section 26: Termination pad 28, 36: terminal pin 33: Groove section 34, 312: routing components 38: lower surface 40, 458: first surface 42, 460: second surface 46: Hard cover 48: photoresist layer 50: photoresist pattern 52: Hard cover pattern 54: opening 62: Pad opening 64, 68, 80: perforation 66: Resistive material 67: top surface 69: Termination end 74: The first functional material 76: The first functional element 78: Dielectric layer 79: Through hole 84: Second functional material 86: Second functional element 90: first post hole 92: second post hole 100, 400: method 102~118, 122~134, 202~216, 402~422: steps 300: Support base 302: Board Assembly 304: Tubular rod 306: Joint Topography 308: (monolithic) ceramic substrate; monolithic substrate 314: The first terminal (partial) 316: second terminal (partial) 318: Lead 450: (thermal) equal pressure chamber 452: first block 454: second block 455: ceramic powder 456: Sintered assembly 457: ceramic substrate 464: Functional Materials 470: Sintered base part; second sintered board 472, 478: Mixture 476: Material layer 480: hole

本揭露內容從詳細描述及後附圖式將可更完整了解，其中：The content of this disclosure will be more fully understood from the detailed description and the accompanying drawings, in which:

圖1為根據本揭露內容之教示所構建之一電加熱器的橫截面圖；Figure 1 is a cross-sectional view of an electric heater constructed according to the teachings of the present disclosure;

圖2A至圖2D為製造根據本揭露內容之教示之圖1的一電加熱器之一加熱器層的步驟之示意圖；2A to 2D are schematic diagrams of steps of manufacturing a heater layer of an electric heater of FIG. 1 according to the teachings of the present disclosure;

圖2E係為製造根據本揭露內容之教示之圖1的一電加熱器之一路由層的步驟之示意圖；2E is a schematic diagram of the steps of manufacturing a routing layer of an electric heater of FIG. 1 according to the teachings of the present disclosure;

圖3係為製造根據本揭露內容之教示之一電加熱器的方法之變型的步驟之示意圖；3 is a schematic diagram of the steps of a modification of the method of manufacturing an electric heater according to the teachings of the present disclosure;

圖4係為包括依據本揭露內容之教示構建之一電加熱器之一支撐基座的橫截面圖；以及Figure 4 is a cross-sectional view of a supporting base including an electric heater constructed according to the teachings of the present disclosure; and

圖5A至圖5D係為繪示製造根據本揭露內容教示之圖4的支撐基座之步驟的示意圖。5A to 5D are schematic diagrams showing the steps of manufacturing the supporting base of FIG. 4 according to the teachings of the present disclosure.

對應參考編號于圖式之幾個視圖中標示對應部件。Corresponding reference numbers indicate corresponding parts in several views of the drawings.

10:電加熱器 10: Electric heater

12:加熱器層 12: heater layer

14:路由層 14: routing layer

16:接合層 16: Bonding layer

17:保護層 17: protective layer

18、30:基體 18, 30: matrix

20、32:溝槽 20, 32: groove

21:第一溝槽區段 21: The first groove section

22:電阻式加熱元件 22: Resistance heating element

24:第二溝槽區段 24: Second groove section

26:端接墊 26: Termination pad

28、36:端接銷 28, 36: terminal pin

33:溝槽區段 33: Groove section

34:路由元件 34: routing element

38:下表面 38: lower surface

Claims (15)

一種建構經燒結總成之方法，該方法包含下列步驟： 將多個第一料塊置放在一等均壓腔室； 以陶瓷粉末充填該等均壓腔室； 熱壓該陶瓷粉末和該等多個第一料塊以形成經燒結總成，該經燒結總成包括一第一表面和與該第一表面相對之一第二表面，該等第一料塊係自該第一表面暴露；以及 在該等第一料塊燒結於該經燒結總成之後，於該經燒結總成的該第一表面上形成一功能性元件，使得該功能性元件係連接至該等第一料塊。A method of constructing a sintered assembly, the method includes the following steps: Place multiple first material blocks in an equal pressure chamber; Fill the equalizing chambers with ceramic powder; The ceramic powder and the plurality of first blocks are hot pressed to form a sintered assembly. The sintered assembly includes a first surface and a second surface opposite to the first surface. The first blocks Is exposed from the first surface; and After the first blocks are sintered in the sintered assembly, a functional element is formed on the first surface of the sintered assembly, so that the functional element is connected to the first blocks. 如請求項1之方法，其中形成該功能性元件之步驟包含下列步驟： 形成至少一溝槽到該經燒結總成之該該第一表面中，且形成到該等多個第一料塊之一部分中；以及 積設一功能性材料到該至少一溝槽中以形成該功能性元件，使得該功能性元件連接到該等多個第一料塊。Such as the method of claim 1, wherein the step of forming the functional element includes the following steps: Forming at least one groove into the first surface of the sintered assembly and into a portion of the plurality of first blocks; and A functional material is accumulated in the at least one groove to form the functional element, so that the functional element is connected to the plurality of first blocks. 如請求項1之方法，其中該等多個料塊係自該經燒結總成之該第一表面及該第二表面兩者暴露。The method of claim 1, wherein the plurality of blocks are exposed from both the first surface and the second surface of the sintered assembly. 如請求項1之方法，進一步包含將多個第二料塊與該等多個第一料塊一起置放在該等均壓腔室，該等第二料塊具有比該等第一料塊小之長度。For example, the method of claim 1, further comprising placing a plurality of second material blocks in the pressure equalizing chambers together with the plurality of first material blocks, and the second material blocks have a larger size than the first material blocks. The length of the small. 如請求項4之方法，其中該等第二料塊係設置在該等均壓腔室中，使得該等第二料塊於該熱壓步驟之後係設置在該經燒結總成之一中心部分。Such as the method of claim 4, wherein the second material blocks are arranged in the pressure equalizing chambers, so that the second material blocks are arranged in a central part of the sintered assembly after the hot pressing step . 如請求項4之方法，其中該陶瓷粉末、該等多個第一料塊和該等多個第二料塊被熱壓以形成該經燒結總成，該等第一料塊係自該經燒結總成之該第一表面及該第二表面兩者暴露，而該等第二料塊僅自該經燒結總成之該第二表面暴露。Such as the method of claim 4, wherein the ceramic powder, the plurality of first blocks and the plurality of second blocks are hot pressed to form the sintered assembly, and the first blocks are obtained from the Both the first surface and the second surface of the sintered assembly are exposed, and the second blocks are only exposed from the second surface of the sintered assembly. 如請求項6之方法，進一步包含於該經燒結總成的該第二表面上形成一材料層，使得該等第二料塊藉由該材料層而與該等第一料塊連結。The method of claim 6, further comprising forming a material layer on the second surface of the sintered assembly, so that the second material blocks are connected with the first material blocks through the material layer. 如請求項7之方法，進一步包含下列步驟： 將一經燒結基體部分置放於一熱等均壓腔室中； 將上面形成有該功能性元件和該材料層之該經燒結總成置放於該經燒結基體部分上； 以陶瓷粉末充填該熱等均壓腔室，使得上面有該功能性元件和該材料層之該經燒結總成被設置在該陶瓷粉末與該經燒結基體部分之間；以及 熱壓該經燒結總成、該功能性元件、該材料層及該經燒結基體部分，以形成一單石式基體， 其中該等第一料塊、該等第二料塊、該功能性元件及該材料層係嵌置於該單石式基體中。Such as the method of claim 7, further including the following steps: Place a sintered substrate part in a hot isostatic pressure chamber; Placing the sintered assembly on which the functional element and the material layer are formed on the sintered base part; Filling the thermal isostatic pressure chamber with ceramic powder, so that the sintered assembly with the functional element and the material layer on it is disposed between the ceramic powder and the sintered base part; and Hot pressing the sintered assembly, the functional element, the material layer and the sintered base part to form a monolithic base, The first material blocks, the second material blocks, the functional element and the material layer are embedded in the monolithic base. 一種建構加熱器之方法，該方法包含下列步驟： 將多個第一料塊置放在一等均壓腔室； 以陶瓷粉末充填該等均壓腔室； 熱壓該陶瓷粉末和該等多個第一料塊以形成經燒結總成，該經燒結總成具有一第一表面和與該第一表面相對之一第二表面；以及 在該等第一料塊形成於該經燒結總成之後，於該經燒結總成的該第一表面上形成一電阻加熱元件，使得該電阻加熱元件係連接至該等第一料塊。A method of constructing a heater, the method includes the following steps: Place multiple first material blocks in an equal pressure chamber; Fill the equalizing chambers with ceramic powder; Hot pressing the ceramic powder and the plurality of first blocks to form a sintered assembly, the sintered assembly having a first surface and a second surface opposite to the first surface; and After the first material blocks are formed on the sintered assembly, a resistance heating element is formed on the first surface of the sintered assembly, so that the resistance heating element is connected to the first material blocks. 如請求項9之方法，其中於該經燒結總成的該第一表面上形成一電阻加熱元件之步驟包含： 形成至少一溝槽到該經燒結總成之該該第一表面中，且形成到該等多個第一料塊之一部分中；以及 積設一電阻材料到該至少一溝槽中以形成該電阻加熱元件。The method of claim 9, wherein the step of forming a resistance heating element on the first surface of the sintered assembly includes: Forming at least one groove into the first surface of the sintered assembly and into a portion of the plurality of first blocks; and A resistive material is accumulated in the at least one groove to form the resistive heating element. 如請求項10之方法，進一步包含將多個第二料塊與該等多個第一料塊一起置放在該等均壓腔室，該等第二料塊具有比該等第一料塊小之長度，使得該等第一料塊和該等第二料塊被熱壓以形成該經燒結總成。For example, the method of claim 10, further comprising placing a plurality of second material blocks together with the plurality of first material blocks in the pressure equalizing chambers, and the second material blocks have a larger size than the first material blocks. The small length allows the first material blocks and the second material blocks to be hot pressed to form the sintered assembly. 如請求項11之方法，其中該等第一料塊係自該經燒結總成之該第一表面及該第二表面兩者暴露，以及該等第二料塊僅自該經燒結總成之該第二表面暴露。Such as the method of claim 11, wherein the first blocks are exposed from both the first surface and the second surface of the sintered assembly, and the second blocks are only from the sintered assembly The second surface is exposed. 如請求項12之方法，進一步包含於該經燒結總成的該第二表面上形成一材料層，使得該等第二料塊藉由該材料層和該等第一料塊而與該電阻加熱元件連結。The method of claim 12, further comprising forming a material layer on the second surface of the sintered assembly, so that the second material blocks are heated with the resistance by the material layer and the first material blocks Component link. 如請求項13之方法，其中該等第二料塊作用為端部分，其用以將該電阻加熱元件連接至一外部電源。Such as the method of claim 13, wherein the second material blocks function as end portions for connecting the resistance heating element to an external power source. 如請求項13之方法，其中該等第二料塊係設置在該經燒結總成之一中心部分。Such as the method of claim 13, wherein the second blocks are arranged in a central part of the sintered assembly.
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