TWI722986B - Plasma spray coating design using phase and stress control - Google Patents

Abstract

To manufacture a coating for an article for a semiconductor processing chamber, the article including a body of at least one of Al, Al₂O₃, or SiC is provided and a ceramic coating is coated on the body, wherein the ceramic coating includes a compound of Y₂O₃, Al₂O₃, and ZrO₂. The ceramic coating is applied to the body by a method including providing a plasma spraying system having a plasma current in the range of between about 100 A to about 1000 A, positioning a torch standoff of the plasma spraying system a distance from the body between about 60 mm and about 250 mm, flowing a first gas through the plasma spraying system at a rate of between about 30 L/min and about 400 L/min, and plasma spray coating the body to form a ceramic coating, wherein splats of the coating are amorphous and have a pancake shape.

Description

使用相和應力控制的電漿噴灑塗佈設計 Plasma spray coating design using phase and stress control 【相關申請案】 【Related Application Cases】

本專利申請案根據專利法主張於2014年5月16日提出申請的美國臨時專利申請案第61/994,648號的優先權權益。 This patent application claims the priority rights of U.S. Provisional Patent Application No. 61/994,648 filed on May 16, 2014 in accordance with the Patent Law.

本揭示之實施例大體而言係關於塗佈陶瓷的物件及將陶瓷塗層施加於元件的方法。 The embodiments of the present disclosure generally relate to ceramic-coated objects and methods of applying ceramic coatings to components.

在半導體產業中，元件是由若干生產尺寸不斷縮小的結構的製造程序所製造的。有一些製造程序，例如電漿蝕刻和電漿清洗製程使基板曝露於高速電漿流以蝕刻或清洗基板。電漿可能是高侵蝕性的，而且可能會侵蝕處理室及其他曝露於電漿(例如曝露於電漿環境)的表面。這種侵蝕可能會產生顆粒，顆粒往往會污染正被處理的基板(例如半導體晶圓)。這些晶圓上的顆粒會促成元件缺陷。 In the semiconductor industry, components are manufactured by a number of manufacturing processes that produce structures that are shrinking in size. There are some manufacturing processes, such as plasma etching and plasma cleaning processes that expose the substrate to a high-speed plasma flow to etch or clean the substrate. Plasma may be highly corrosive and may corrode the processing chamber and other surfaces exposed to the plasma (e.g., exposed to the plasma environment). This erosion may produce particles, which tend to contaminate the substrate (such as a semiconductor wafer) being processed. The particles on these wafers can contribute to component defects.

隨著元件的幾何尺寸縮小，缺陷越容易產生，而且對顆粒污染物的要求越來越嚴格。因此，隨著元件的幾何尺寸縮小，顆粒污染的容許水平可能會降低。為了盡量減少由電漿蝕刻及/或電漿清洗製 程引入的顆粒污染，已經開發出耐電漿的腔室材料。不同的材料可提供不同的材料性質，例如耐電漿性、剛性、彎曲強度、耐熱衝擊性、等等。同時，不同的材料具有不同的材料成本。因此，一些材料具有優良的耐電漿性，其他材料具有較低的成本，並且仍有其他材料具有優良的彎曲強度及/或耐熱衝擊性。 As the geometric size of the components shrinks, defects are more likely to occur, and the requirements for particulate contaminants are becoming stricter. Therefore, as the geometric dimensions of the components shrink, the allowable level of particle contamination may decrease. In order to minimize the use of plasma etching and/or plasma cleaning The particle contamination introduced by the process has developed a chamber material that is resistant to plasma. Different materials can provide different material properties, such as plasma resistance, rigidity, bending strength, thermal shock resistance, and so on. At the same time, different materials have different material costs. Therefore, some materials have excellent plasma resistance, other materials have lower costs, and there are still other materials with excellent bending strength and/or thermal shock resistance.

在一個實施例中，物件包括主體，該主體包含Al、Al₂O₃、AlN、Y₂O₃、YSZ、或SiC中之至少一者。該物件進一步包括在該主體之至少一個表面上的電漿噴灑陶瓷塗層，該陶瓷塗層包含的化合物包含Y₂O₃、Al₂O₃、及ZrO₂。該陶瓷塗層進一步包含重疊的盤餅形噴濺並具有非晶相。 In one embodiment, the object includes a body including _{at least one of Al, Al 2} O ₃ , AlN, Y ₂ O ₃ , YSZ, or SiC. The object further includes a plasma sprayed ceramic coating on at least one surface of the main body, and the ceramic coating contains compounds including Y ₂ O ₃ , Al ₂ O ₃ , and ZrO ₂ . The ceramic coating further comprises overlapping disc-shaped sprays and has an amorphous phase.

在一個實施例中，一種塗佈物件的方法包括將電漿噴灑系統的電漿電流設定於約100A至約1000A的值。該方法進一步包括將該電漿噴灑系統的噴炬支架定位於距主體介於約60mm和約250mm之間的距離。該方法進一步包括使第一氣體以介於約30L/min和約400L/min之間的速率流過該電漿噴灑系統。該方法進一步包括進行電漿噴灑塗佈以在該主體上形成陶瓷塗層，該陶瓷塗層具有內部壓縮應力及非晶相，其中該陶瓷塗層包含Y₂O₃、Al₂O₃、及ZrO₂的化合物，及其中該塗層的噴濺具有盤餅形。 In one embodiment, a method of coating an object includes setting the plasma current of the plasma spray system to a value of about 100A to about 1000A. The method further includes positioning the torch holder of the plasma spray system at a distance between about 60 mm and about 250 mm from the main body. The method further includes flowing the first gas through the plasma spray system at a rate between about 30 L/min and about 400 L/min. The method further includes performing plasma spray coating to form a ceramic coating on the body, the ceramic coating having internal compressive stress and an amorphous phase, wherein the ceramic coating includes Y ₂ O ₃ , Al ₂ O ₃ , and The compound of ZrO ₂ and the spray of the coating in it have a disc shape.

在一個實施例中，藉由一方法製造物件，該方法包括將包含Al、Al₂O₃、AlN、Y₂O₃、YSZ、或SiC中之至少一者的主體放入電漿噴灑系統中(例如將該物件放在電漿噴灑系統的噴嘴或噴槍前方)及藉由該電漿噴灑系統進行電漿噴灑製程，以使用陶瓷塗層塗佈該主體之至少一個表面，該陶瓷塗層係由包含Y₄Al₂O₉和Y₂O₃-ZrO₂固溶體的化合物所組成。該電漿噴灑系統沉積由重疊的盤餅形噴濺製成的陶瓷塗層。此外，該陶瓷塗層不經相變直接以非晶相形成。 In one embodiment, the object is manufactured by a method that includes placing a body containing _{at least one of Al, Al 2} O ₃ , AlN, Y ₂ O ₃ , YSZ, or SiC into a plasma spray system (For example, put the object in front of the nozzle or spray gun of the plasma spraying system) and perform the plasma spraying process by the plasma spraying system to coat at least one surface of the main body with a ceramic coating. The ceramic coating is It is composed of a compound _{containing Y 4} Al ₂ O ₉ and Y ₂ O ₃ -ZrO _{2 solid solution.} The plasma spray system deposits a ceramic coating made of overlapping disc-shaped sprays. In addition, the ceramic coating is directly formed in an amorphous phase without undergoing phase change.

100:襯裡套組 100: Lining set

101:上襯裡 101: Upper lining

103:狹縫閥門 103: slit valve

105:電漿隔板 105: Plasma separator

107:下襯裡 107: under lining

109:陰極襯裡 109: Cathode Lining

111:腔室主體 111: Chamber body

120:前側 120: front

122:後側 122: back

124:外徑 124: Outer diameter

130:位置 130: location

200:製造系統 200: Manufacturing System

201:處理設備 201: Processing equipment

202:珠擊機 202: Pearl Strike Machine

203:濕清洗機 203: Wet cleaning machine

204:電漿噴灑槍系統 204: Plasma spray gun system

215:設備自動化層 215: equipment automation layer

220:運算裝置 220: computing device

225:陶瓷塗層製作方法 225: Ceramic coating production method

300:系統 300: System

302:氣體輸送管 302: Gas delivery pipe

304:陽極 304: anode

306:電弧 306: Arc

308:粉末 308: Powder

310:物件 310: Object

312:塗層 312: Coating

314:熔融顆粒流 314: Molten Particle Stream

316:陰極 316: Cathode

318:電漿氣體 318: Plasma Gas

320:噴嘴 320: nozzle

400:製程 400: Process

402-408:方塊 402-408: Block

501-506:視圖 501-506: View

601-602:圖 601-602: Figure

在附圖的圖式中藉由舉例的方式、而不是藉由限制的方式圖示出本發明，其中類似的標號表示類似的元件。應當指出的是，本揭示中不同地提及「一」或「一個」實施例不一定是提及相同的實施例，而且這樣的提及意指至少一個。 In the drawings of the drawings, the present invention is illustrated by way of example, not by way of limitation, in which similar reference numerals indicate similar elements. It should be noted that various references to "a" or "one" embodiment in this disclosure are not necessarily to refer to the same embodiment, and such references mean at least one.

第1圖圖示依據一個實施例的襯裡套組之剖視圖。 Figure 1 illustrates a cross-sectional view of a liner set according to an embodiment.

第2圖圖示依據一個實施例的製造系統之例示架構。 Figure 2 illustrates an exemplary architecture of a manufacturing system according to an embodiment.

第3圖圖示依據一個實施例的電漿噴灑系統之剖視圖。 Figure 3 illustrates a cross-sectional view of a plasma spraying system according to an embodiment.

第4圖圖示依據一個實施例將塗層施加於物件的方法。 Figure 4 illustrates a method of applying a coating to an object according to an embodiment.

第5圖圖示依據實施例的噴濺表面之掃描電子顯微鏡(SEM)視圖。 Fig. 5 illustrates a scanning electron microscope (SEM) view of the sprayed surface according to an embodiment.

第6圖圖示依據實施例塗層的曲率隨時間的變化。 Fig. 6 shows the variation of the curvature of the coating with time according to the example.

本發明的實施例是針對在半導體處理室中曝露於電漿化學物質的物件(例如電漿隔板、襯裡套組、噴頭、蓋子、靜電夾盤、或其他腔室元件)及該物件上的陶瓷塗層。使用陶瓷塗層塗佈物件的方法包括提供電漿電流在約100A至約1000A之間的範圍中的電漿噴灑系統，及將該電漿噴灑系統的噴炬支架定位於距物件介於約50mm和約250mm之間的距離。該方法還包括使電漿氣體(用以產生電漿的氣體)以介於約30L/min和約400L/min之間的速率流過該電漿噴灑系統，及使用陶瓷塗層電漿噴灑塗佈該物件。該陶瓷塗層包括Y₂O₃、Al₂O₃、及ZrO₂的化合物，而且該物件上塗層的噴濺具有盤餅形。在一個實施例中，該化合物為包含Y₄Al₂O₉和Y₂O₃-ZrO₂固溶體的陶瓷化合物。藉由使用所提供的陶瓷和所提供的電漿噴灑設定來進行電漿噴灑製程，便形成了盤餅形噴濺。這些盤餅形噴濺使塗層具有緻密且平滑的表面並帶有內置(內部)壓縮應力。陶瓷塗層可以具有範圍從約2密耳至約15密耳的厚度。 The embodiments of the present invention are directed to objects exposed to plasma chemicals in a semiconductor processing chamber (such as plasma partitions, liner sets, shower heads, covers, electrostatic chucks, or other chamber components) and the objects on the objects Ceramic coating. The method of coating an object with a ceramic coating includes providing a plasma spraying system with a plasma current in the range of about 100A to about 1000A, and positioning the torch holder of the plasma spraying system at a distance of about 50mm from the object And the distance between about 250mm. The method also includes flowing plasma gas (gas used to generate plasma) through the plasma spraying system at a rate between about 30 L/min and about 400 L/min, and spraying the plasma with ceramic coating. Distribute the object. The ceramic coating includes _{compounds of Y 2} O ₃ , Al ₂ O ₃ , and ZrO ₂ , and the spray of the coating on the object has a disc shape. In one embodiment, the compound is a ceramic compound _{containing Y 4} Al ₂ O ₉ and Y ₂ O ₃ -ZrO _{2 solid solution.} By using the provided ceramics and the provided plasma spraying settings to perform the plasma spraying process, a disc-shaped spray is formed. These disc-shaped sprays give the coating a dense and smooth surface with built-in (internal) compressive stress. The ceramic coating may have a thickness ranging from about 2 mils to about 15 mils.

在一個實施例中，陶瓷塗層包括約53莫耳%的Y₂O₃、約10莫耳%的ZrO₂、及約37莫耳%的Al₂O₃。電漿電流可以在約540A和約560A的範圍中，並且電漿噴灑系統的噴炬支架可以被定位在距主體約90mm和約110mm之間的距離。在一個實施例中，電漿電流為大約550A，而與主體的距離為約100mm。電漿氣體可以以介於30L/min和約400L/min之間的速率流過電漿噴灑系統。在實施例中，噴炬的噴嘴可以具有直徑約6mm的開口，噴炬可以具有約700m/s的光柵速度，而且粉末的進料速率可以是約20g/m。 In one embodiment, the ceramic coating includes about 53 mol% Y ₂ O ₃ , about 10 mol% ZrO ₂ , and about 37 mol% Al ₂ O ₃ . The plasma current may be in the range of about 540A and about 560A, and the torch holder of the plasma spray system may be positioned at a distance between about 90mm and about 110mm from the main body. In one embodiment, the plasma current is about 550A, and the distance from the main body is about 100mm. The plasma gas can flow through the plasma spray system at a rate between 30 L/min and about 400 L/min. In an embodiment, the nozzle of the spray torch may have an opening with a diameter of about 6 mm, the spray torch may have a grating speed of about 700 m/s, and the powder feed rate may be about 20 g/m.

半導體腔室元件，例如蓋子、襯裡、及處理套組可以塗佈有耐侵蝕的電漿噴灑塗層。電漿噴灑塗層會有產生高孔隙率(例如大於約3%)的內置拉伸應力及導致不可接受的大量晶圓上顆粒的表面破裂。另外，由於塗層中固有的孔隙率，在濕清洗過程中的化學侵蝕會導致塗層損壞及/或剝離。 Semiconductor chamber components, such as lids, linings, and processing kits, can be coated with corrosion-resistant plasma spray coatings. Plasma spray coatings can produce built-in tensile stresses with high porosity (for example, greater than about 3%) and cause unacceptable surface cracking of a large number of particles on the wafer. In addition, due to the inherent porosity in the coating, chemical attack during wet cleaning can cause damage and/or peeling of the coating.

依據實施例的塗層可以提供緻密且平滑的表面並帶有內置(內部)壓縮應力，從而可以減少塗層中的固有孔隙率和破裂並改善晶圓上的缺陷表現。另外，依據實施例的塗層之耐侵蝕性可以優於標準塗層，從而可以使用該塗層增長元件的使用壽命。例如，由具有依據實施例的塗層之陶瓷基材所形成的蓋子可以具有減少的孔隙率和破裂，從而導致增強的 晶圓上表現。在另一個實例中，由具有依據實施例的塗層的金屬基材所形成的襯裡可以在強勁的濕清洗過程中更耐化學侵蝕所造成的損傷。在又另一個實例中，在處理過程中圍繞晶圓並且通常具有高侵蝕率的處理套組環帶有依據實施例的塗層可以具有裂紋較少或沒有的更光滑塗層，從而增強晶圓上的顆粒表現。 The coating according to the embodiment can provide a dense and smooth surface with built-in (internal) compressive stress, which can reduce inherent porosity and cracks in the coating and improve the performance of defects on the wafer. In addition, the corrosion resistance of the coating according to the embodiment can be better than that of the standard coating, so that the coating can be used to increase the service life of the component. For example, a lid formed of a ceramic substrate with a coating according to the embodiment may have reduced porosity and cracks, resulting in enhanced On-wafer performance. In another example, a lining formed of a metal substrate with a coating according to the embodiment can be more resistant to damage caused by chemical attack during a strong wet cleaning process. In yet another example, a processing kit ring that surrounds the wafer during processing and generally has a high erosion rate with a coating according to an embodiment may have a smoother coating with fewer or no cracks, thereby strengthening the wafer On the performance of the particles.

依據實施例，可以藉由在噴灑過程中控制塗層的相和應力而以電漿噴灑將塗層形成為平滑且緻密。用於電漿噴灑的粉末也可以被配製為非晶相，而不是結晶相，而且在噴灑過程中具有壓縮應力。粉末材料可以被配製成在塗層沉積過程中容易完全熔化。除了塗佈的製程條件之外，粉末的噴濺可以藉由控制粉末的配方而被最佳化為無裂紋或具有較少裂紋的盤餅形。本文中使用的術語盤餅形是指直徑(或長度和寬度)的數量級比厚度大許多級且近似圓形、橢圓形或長橢圓形的形狀。 According to the embodiment, the coating can be formed smooth and dense by plasma spraying by controlling the phase and stress of the coating during the spraying process. The powder used for plasma spraying can also be formulated as an amorphous phase instead of a crystalline phase, and has compressive stress during the spraying process. The powder material can be formulated to easily melt completely during the coating deposition process. In addition to the coating process conditions, powder spraying can be optimized to a disc shape with no cracks or with fewer cracks by controlling the powder formulation. The term pie-shaped as used herein refers to a shape whose diameter (or length and width) is many orders of magnitude larger than the thickness and is approximately circular, elliptical, or oblong.

在一實施例中，塗層可以主要為非晶相而且可以在噴灑過程中發展出壓縮演進應力。在塗層的沉積過程中，完全熔化的顆粒可以在沒有相變之下固化成非晶相。在固化過程中避免相變可以降低裂紋由於塗層體積變化而形成的發生率。在塗層噴濺中的裂紋會導致塗層性能不佳，包括晶圓上的顆粒數量增加。 In one embodiment, the coating may be mainly amorphous and may develop compressive evolution stress during the spraying process. During the deposition of the coating, the completely melted particles can be solidified into an amorphous phase without phase change. Avoiding phase changes during curing can reduce the incidence of cracks due to changes in coating volume. Cracks in the coating spray can cause poor coating performance, including an increase in the number of particles on the wafer.

依據實施例，基材的材料可以包括金屬、金屬氧化物、氮化物、碳化物、及這些材料的合金，例如Al、Al₂O₃、AlN、SiC、Y₂O₃、氧化釔穩定的氧化鋯(YSZ)等。 According to embodiments, the material of the substrate may include metals, metal oxides, nitrides, carbides, and alloys of these materials, such as Al, Al ₂ O ₃ , AlN, SiC, Y ₂ O ₃ , and yttrium oxide stable oxidation Zirconium (YSZ) and so on.

導體蝕刻製程會涉及導電性基板(例如Si晶圓)藉由氣體混合物的電漿輔助蝕刻。如第1圖所圖示，在導體蝕刻中，晶圓上等級的顆粒表現主要是與諸如襯裡套組100的腔室元件相關。襯裡套組100具有前側120、後側122、及外徑124，外徑124中可以包括腔室主體111、上襯裡101、狹縫閥門103、電漿隔板105(即在晶圓周圍的格柵狀結構)、下襯裡107及陰極襯裡109。上襯裡101、狹縫閥門103及下襯裡107較靠近腔室主體111，而電漿隔板105位於晶圓周圍(未圖示出，但在操作過程中位於位置130)，而且陰極襯裡109坐落於晶圓下方。 The conductor etching process involves plasma-assisted etching of conductive substrates (such as Si wafers) with gas mixtures. As shown in FIG. 1, in the conductor etching, the performance of the particles on the wafer level is mainly related to the chamber components such as the liner set 100. The liner set 100 has a front side 120, a back side 122, and an outer diameter 124. The outer diameter 124 may include a chamber body 111, an upper liner 101, a slit valve 103, and a plasma partition 105 (that is, a grid around the wafer). Grid structure), lower lining 107 and cathode lining 109. The upper lining 101, the slit valve 103, and the lower lining 107 are closer to the chamber body 111, while the plasma partition 105 is located around the wafer (not shown, but at position 130 during operation), and the cathode lining 109 is located Below the wafer.

標準的襯裡套組可以由塗佈有8-12密耳電漿噴灑的Y₂O₃(氧化釔)的鋁基材或其他表面粗糙度約100-270μin的陶瓷所製成。對於大多數典型的半導體應用來說，晶圓上顆粒的規格為最多添加約30個(例如位在晶圓上的30個零星顆粒)粒徑大於或等於90nm的顆粒。標準的Y₂O₃襯裡套組符合此晶圓上顆粒的規格。 The standard liner set can be made of aluminum substrate coated with 8-12 mils of plasma sprayed Y ₂ O ₃ (yttrium oxide) or other ceramics with a surface roughness of about 100-270 μin. For most typical semiconductor applications, the size of the particles on the wafer is to add about 30 particles (for example, 30 sporadic particles on the wafer) with a particle size greater than or equal to 90 nm at most. The standard Y ₂ O ₃ liner set meets the specifications of the particles on this wafer.

對於在28nm元件節點的特定先進應用來說，晶圓上顆粒的規格更嚴格得多，在尺寸大於或 等於45nm，為少於或等於1.3個添加物。此外，這些應用可能會使用還原化學物質(H₂、CH₄、CO、COS等)，該等還原化學物質往往會增加晶圓上的顆粒污染。在還原化學物質之下使用傳統塗佈Y₂O₃的襯裡套組的腔室測試顯現多的晶圓上顆粒(例如大於或等於45nm的顆粒尺寸，約50至100個或更多的添加物)。在一些情況下，大量的腔室乾燥(例如100至150射頻(RF)小時的處理)可以將顆粒缺陷的水平降到在大於或等於45nm的顆粒尺寸為約0至10個添加物，以在可以重新開始生產之前符合生產規格。然而，長的腔室乾燥時間會降低生產力。在測試中，能量色散X射線光譜儀已經確認的是，傳統基於Y₂O₃的晶圓上顆粒可能源自襯裡套組。另外，Y₂O₃塗層在還原化學物質(例如H₂、CH₄、CO、COS等)之下較不穩定，並形成大量的Y-OH。Y-OH的轉化導致體積改變，從而在晶圓上產生脫落的顆粒。 For specific advanced applications at the 28nm component node, the specifications of the particles on the wafer are much more stringent, with a size greater than or equal to 45nm and less than or equal to 1.3 additives. In addition, these applications may use reducing chemicals (H ₂ , CH ₄ , CO, COS, etc.), which tend to increase particle contamination on the wafer. _{The chamber test using the traditional Y 2} O ₃ coated liner set under the reducing chemical substance revealed a lot of on-wafer particles (for example, a particle size greater than or equal to 45 nm, about 50 to 100 or more additives ). In some cases, a large amount of chamber drying (for example, 100 to 150 hours of radio frequency (RF) processing) can reduce the level of particle defects to about 0 to 10 additives at a particle size greater than or equal to 45 nm. Can meet production specifications before restarting production. However, a long chamber drying time will reduce productivity. In the test, the energy dispersive X-ray spectrometer has confirmed that the traditional Y ₂ O ₃ based on-wafer particles may originate from the liner set. In addition, the Y ₂ O ₃ coating is relatively unstable under reducing chemicals (such as H ₂ , CH ₄ , CO, COS, etc.) and forms a large amount of Y-OH. The conversion of Y-OH results in a change in volume, resulting in shed particles on the wafer.

本發明的實施例包括複合陶瓷塗層材料，以在半導體產業應用中改良腔室元件的晶圓上顆粒表現。例如，在襯裡套組的應用中，可以使用電漿噴灑技術將複合陶瓷塗層(例如基於氧化釔的複合陶瓷塗層)施加於襯裡套組的面電漿側。在其他實施例中，複合陶瓷塗層可以經由氣溶膠沉積、漿料電漿、或其他適當的技術(例如其他的熱噴灑技術)施加。在一個實例中，在鋁襯裡套組上的塗層厚度可以高達 15密耳。在另一個實例中，Al₂O₃或其他的金屬氧化物基材(其中塗層的熱膨脹係數(CTE)更好地匹配基板的CTE)可以具有較厚的塗層。 Embodiments of the present invention include composite ceramic coating materials to improve the on-wafer particle performance of chamber components in semiconductor industry applications. For example, in the application of the lining set, a plasma spraying technique can be used to apply a composite ceramic coating (for example, a composite ceramic coating based on yttria) on the plasma side of the lining set. In other embodiments, the composite ceramic coating may be applied via aerosol deposition, slurry plasma, or other suitable techniques (such as other thermal spraying techniques). In one example, the thickness of the coating on the aluminum liner set can be as high as 15 mils. In another example, Al ₂ O ₃ or other metal oxide substrates (where the coefficient of thermal expansion (CTE) of the coating better matches the CTE of the substrate) may have a thicker coating.

在一實施例中，複合陶瓷塗層是由Y₂O₃、Al₂O₃、及ZrO₂的化合物所組成的。例如，在一實施例中，複合陶瓷塗層包括約53莫耳%的Y₂O₃、約10莫耳%的ZrO₂、及約37莫耳%的Al₂O₃。在另一個實施例中，複合陶瓷塗層可以包括範圍在20-90莫耳%的Y₂O₃、範圍在0-80莫耳%的ZrO₂、及範圍在10-70莫耳%的Al₂O₃。在其他實施例中，也可以將其他的分配用於複合陶瓷塗層。在一個實施例中，複合陶瓷是可與ZrO₂、Al₂O₃、HfO₂、Er₂O₃、Nd₂O₃、Nb₂O₅、CeO₂、Sm₂O₃、Yb₂O₃、或上述之組合中之一者或更多者混合的含氧化釔固溶體。在一個實施例中，該化合物是包含Y₄Al₂O₉和Y₂O₃-ZrO₂固溶體的陶瓷化合物。 In one embodiment, the composite ceramic coating is composed of a compound of Y ₂ O ₃ , Al ₂ O ₃ , and ZrO ₂ . For example, in one embodiment, the composite ceramic coating includes about 53 mol% Y ₂ O ₃ , about 10 mol% ZrO ₂ , and about 37 mol% Al ₂ O ₃ . In another embodiment, the composite ceramic coating may include Y ₂ O _{3 in the range of 20-90 mol%, ZrO 2} in the range of 0-80 mol%, and Al in the range of 10-70 mol%. ₂ O ₃ . In other embodiments, other allocations can also be used for the composite ceramic coating. In one embodiment, the composite ceramic is compatible with ZrO ₂ , Al ₂ O ₃ , HfO ₂ , Er ₂ O ₃ , Nd ₂ O ₃ , Nb ₂ O ₅ , CeO ₂ , Sm ₂ O ₃ , Yb ₂ O ₃ , Or a solid solution containing yttrium oxide mixed with one or more of the above-mentioned combinations. In one embodiment, the compound is a ceramic compound _{containing Y 4} Al ₂ O ₉ and Y ₂ O ₃ -ZrO _{2 solid solution.}

複合陶瓷塗層可以使用粉末混合物和產生具有前述性質的噴濺的電漿噴灑參數形成。這些噴濺導致複合陶瓷塗層具有內置壓縮應力。該內置壓縮應力是一種在沉積製程期間被整合入陶瓷塗層的內部壓縮應力。 Composite ceramic coatings can be formed using powder mixtures and plasma spray parameters that produce splashes with the aforementioned properties. These splashes cause the composite ceramic coating to have built-in compressive stress. The built-in compressive stress is an internal compressive stress that is integrated into the ceramic coating during the deposition process.

第2圖圖示製造系統200的例示性架構。製造系統200可以是一種塗層製造系統(例如用於將複合陶瓷塗層施加於物件，該物件例如襯裡套 組)。在一個實施例中，製造系統200包括連接到設備自動化層215的處理設備201。處理設備201可以包括珠擊機202、一個或更多個濕清洗機203、電漿噴灑槍系統204及/或其他設備。製造系統200可以進一步包括一個或更多個連接到設備自動化層215的運算裝置220。在替代的實施例中，製造系統200可以包括更多或更少的元件。例如，製造系統200可以包括手動操作的(例如離線的)處理設備201且沒有設備自動化層215或運算裝置220。 FIG. 2 illustrates an exemplary architecture of the manufacturing system 200. The manufacturing system 200 may be a coating manufacturing system (for example, for applying a composite ceramic coating to an object, such as a liner group). In one embodiment, the manufacturing system 200 includes a processing device 201 connected to the device automation layer 215. The processing equipment 201 may include a bead beating machine 202, one or more wet cleaning machines 203, a plasma spray gun system 204, and/or other equipment. The manufacturing system 200 may further include one or more computing devices 220 connected to the equipment automation layer 215. In alternative embodiments, the manufacturing system 200 may include more or fewer elements. For example, the manufacturing system 200 may include a manually operated (for example, offline) processing equipment 201 and no equipment automation layer 215 or computing device 220.

珠擊機202是一種設以使物件(例如襯裡套組)的表面粗糙或光滑的機器。珠擊機202可以是珠擊櫃、手持珠擊機、或其他類型的珠擊機。珠擊機202可以藉由使用珠粒或顆粒轟擊基材來將基材粗糙化。在一個實施例中，珠擊機202在基材射擊陶瓷珠或顆粒。由珠擊機202實現的粗糙度可以基於用以射擊珠粒的力、珠粒的材質、珠粒的尺寸、珠擊機與基材的距離、處理的持續時間等等。在一個實施例中，珠擊機使用一個範圍的珠粒尺寸來粗糙化陶瓷物件。 The bead beating machine 202 is a machine designed to make the surface of an object (such as a lining set) rough or smooth. The bead beating machine 202 may be a bead beating cabinet, a hand-held beading machine, or other types of beading machines. The beading machine 202 can roughen the substrate by bombarding the substrate with beads or particles. In one embodiment, the beading machine 202 shoots ceramic beads or particles at the substrate. The roughness achieved by the beading machine 202 may be based on the force used to shoot the beads, the material of the beads, the size of the beads, the distance between the beading machine and the substrate, the duration of the treatment, and so on. In one embodiment, the beading machine uses a range of bead sizes to roughen ceramic objects.

在替代的實施例中，可以使用珠擊機202以外其他類型的表面粗糙化機。例如，可以使用電動研磨墊來粗糙化陶瓷基材的表面。砂磨機可以在研磨墊被對著物件表面推壓時轉動或振動研磨墊。由 研磨墊實現的粗糙度可以取決於所施加的壓力、振動或轉動速率及/或研磨墊的粗糙度。 In alternative embodiments, other types of surface roughening machines other than the bead beating machine 202 may be used. For example, an electric polishing pad can be used to roughen the surface of the ceramic substrate. The sand mill can rotate or vibrate the polishing pad when the polishing pad is pushed against the surface of the object. by The roughness achieved by the polishing pad may depend on the applied pressure, vibration or rotation rate and/or the roughness of the polishing pad.

濕清洗機203是使用濕清洗製程清洗物件(例如襯裡套組)的清洗設備。濕清洗機203包括填有液體的濕浴，其中基材被浸沒來清洗基材。濕清洗機203可以在清洗過程中使用超音波攪動濕浴，以提高清洗功效。這在本文中被稱為音波處理濕浴。在其他實施例中，可以使用替代類型的清洗機(例如乾洗機)來清洗物件。乾洗機可以藉由施加熱、藉由施加氣體、藉由施加電漿等等來清洗物件。 The wet cleaning machine 203 is a cleaning equipment that uses a wet cleaning process to clean objects (such as a lining set). The wet cleaning machine 203 includes a wet bath filled with liquid in which the substrate is immersed to clean the substrate. The wet cleaning machine 203 can use ultrasonic waves to agitate the wet bath during the cleaning process to improve the cleaning efficiency. This is referred to herein as a sonic treatment wet bath. In other embodiments, an alternative type of washing machine (such as a dry cleaning machine) may be used to clean the object. Dry cleaning machines can clean objects by applying heat, by applying gas, by applying plasma, and so on.

陶瓷塗佈機204是一種設以施加陶瓷塗層到基材表面的機器。在一個實施例中，陶瓷塗佈機204是電漿噴灑機(或電漿噴灑系統)，該電漿噴灑機將塗層(例如複合陶瓷塗層)電漿噴灑到基材(例如襯裡套組)上。在替代的實施例中，陶瓷塗佈機204可以應用其他的熱噴灑技術，例如可以使用爆震噴灑、銲線電弧噴灑、高速氧燃料(HVOF)噴灑、火焰噴灑、暖噴灑、及冷噴灑。 The ceramic coater 204 is a machine designed to apply a ceramic coating to the surface of a substrate. In one embodiment, the ceramic coating machine 204 is a plasma spraying machine (or a plasma spraying system), which sprays the coating (such as a composite ceramic coating) plasma onto the substrate (such as a lining set). )on. In alternative embodiments, the ceramic coater 204 may apply other thermal spraying techniques, such as detonation spraying, wire arc spraying, high velocity oxygen fuel (HVOF) spraying, flame spraying, warm spraying, and cold spraying.

設備自動化層215可以將一些或全部的製造機器201與運算裝置220、其他製造機器、測量工具及/或其他裝置互連。設備自動化層215可以包括網路(例如位置區域網路(LAN))、路由器、閘道器、伺服器、數據儲存器等等。製造機器201可以經由SEMI設備通訊標準/通用設備模型 (SECS/GEM)介面、經由乙太網路介面、及/或經由其他介面連接到設備自動化層215。在一個實施例中，設備自動化層215使製程數據(例如在製程運作期間由製造機器201收集的數據)能夠被儲存在數據儲存器(未圖示)中。在替代的實施例中，運算裝置220直接連接到一個或更多個製造機器201。 The equipment automation layer 215 may interconnect some or all of the manufacturing machines 201 with the computing device 220, other manufacturing machines, measurement tools, and/or other devices. The equipment automation layer 215 may include a network (such as a location area network (LAN)), a router, a gateway, a server, a data storage, and so on. Manufacturing machine 201 can pass SEMI equipment communication standard/universal equipment model (SECS/GEM) interface, connected to the equipment automation layer 215 via an Ethernet interface, and/or via other interfaces. In one embodiment, the equipment automation layer 215 enables process data (such as data collected by the manufacturing machine 201 during process operation) to be stored in a data storage (not shown). In an alternative embodiment, the computing device 220 is directly connected to one or more manufacturing machines 201.

在一個實施例中，一些或全部的製造機器201包括可以載入、儲存及執行製程製作方法的可程式化控制器。可程式化控制器可以控制製造機器201的溫度設定、氣體及/或真空設定、時間設定等。可程式化控制器可以包括主記憶體(例如唯讀記憶體(ROM)、快閃記憶體、動態隨機存取記憶體(DRAM)、靜態隨機存取記憶體(SRAM)等)、及/或輔助記憶體(例如數據存儲裝置，如磁碟驅動器)。主記憶體及/或輔助記憶體可以儲存用於進行本文所述熱處理製程的指令。 In one embodiment, some or all of the manufacturing machines 201 include programmable controllers that can load, store, and execute process manufacturing methods. The programmable controller can control the temperature setting, gas and/or vacuum setting, time setting, etc. of the manufacturing machine 201. The programmable controller may include main memory (such as read-only memory (ROM), flash memory, dynamic random access memory (DRAM), static random access memory (SRAM), etc.), and/or Auxiliary memory (for example, data storage devices, such as disk drives). The main memory and/or the auxiliary memory can store instructions for performing the heat treatment process described herein.

可程式化控制器還可以包括耦接到主記憶體及/或輔助記憶體(例如經由匯流排)的處理裝置，以執行該等指令。處理裝置可以是通用處理裝置，例如微處理器、中央處理單元、或類似物。處理裝置也可以是專用處理裝置，例如專用積體電路(ASIC)、現場可程式化閘陣列(FPGA)、數位訊號處理器(DSP)、網路處理器、或類似物。在一 個實施例中，可程式化控制器是可程式化邏輯控制器(PLC)。 The programmable controller may also include a processing device coupled to the main memory and/or the auxiliary memory (for example, via a bus) to execute the commands. The processing device may be a general-purpose processing device, such as a microprocessor, a central processing unit, or the like. The processing device may also be a dedicated processing device, such as a dedicated integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), a network processor, or the like. In a In one embodiment, the programmable controller is a programmable logic controller (PLC).

在一個實施例中，製造機器201被程式化來執行將使製造機器粗糙化基材、清洗基材及/或物件、塗佈物件及/或加工(例如研磨或拋光)物件的製作方法。在一個實施例中，製造機器201被程式化來執行進行多操作製程之各操作的製作方法，用於製造塗佈陶瓷的物件，如參照下圖所述。運算裝置220可以儲存一個或更多個可以被下載到製造機器201的陶瓷塗層製作方法225，以使製造機器201依據本揭示的實施例製造塗佈陶瓷的物件。 In one embodiment, the manufacturing machine 201 is programmed to perform a manufacturing method that will cause the manufacturing machine to roughen the substrate, clean the substrate and/or object, coat the object, and/or process (eg, grinding or polishing) the object. In one embodiment, the manufacturing machine 201 is programmed to perform a manufacturing method for each operation of a multi-operation process for manufacturing ceramic-coated objects, as described with reference to the following figure. The computing device 220 can store one or more ceramic coating manufacturing methods 225 that can be downloaded to the manufacturing machine 201, so that the manufacturing machine 201 manufactures ceramic-coated objects according to the embodiments of the present disclosure.

第3圖圖示用於將塗層電漿噴灑到侵蝕性系統中使用的介電質蝕刻元件、或其他物件(例如襯裡套組)上的系統300之剖視圖。系統300是一種熱噴灑系統的類型。在電漿噴灑系統300中，電弧306被形成在兩個電極(陽極304和陰極316)之間，使電漿氣體318經由氣體輸送管302流過兩個電極。電漿氣體318可以是兩種或更多種氣體的混合物。適用於電漿噴灑系統300的氣體混合物之實例包括、但不限於氬氣/氫氣、氬氣/氦氣、氮氣/氫氣、氮氣/氦氣、或氬氣/氧氣。第一氣體(正斜線之前的氣體)表示主要氣體，而第二氣體(正斜線之後的氣體)表示次要氣體。主要氣體的氣體流動速率可以與次要氣體的氣體流動速率不同。在一個實施例中，主 要氣體的氣體流動速率為約30L/min和約400L/min。在一個實施例中，次要氣體的氣體流動速率介於約3L/min和約100L/min之間。 FIG. 3 illustrates a cross-sectional view of a system 300 for spraying coating plasma onto a dielectric etching element used in an aggressive system or other objects (such as a liner set). The system 300 is a type of thermal spray system. In the plasma spraying system 300, an arc 306 is formed between two electrodes (anode 304 and cathode 316), so that the plasma gas 318 flows through the two electrodes via the gas delivery pipe 302. The plasma gas 318 may be a mixture of two or more gases. Examples of gas mixtures suitable for the plasma spray system 300 include, but are not limited to, argon/hydrogen, argon/helium, nitrogen/hydrogen, nitrogen/helium, or argon/oxygen. The first gas (the gas before the forward slash) represents the main gas, and the second gas (the gas after the forward slash) represents the secondary gas. The gas flow rate of the primary gas may be different from the gas flow rate of the secondary gas. In one embodiment, the main The gas flow rate of the desired gas is about 30 L/min and about 400 L/min. In one embodiment, the gas flow rate of the secondary gas is between about 3 L/min and about 100 L/min.

當電漿氣體被電弧306離子化和加熱時，氣體膨脹並加速通過經成形的噴嘴320，從而形成高速電漿流。 When the plasma gas is ionized and heated by the arc 306, the gas expands and accelerates through the shaped nozzle 320, thereby forming a high-speed plasma flow.

粉末308被注入電漿噴灑物或噴炬中(例如藉由粉末推進氣體)，其中劇烈的溫度將粉末熔化並將材料作為熔融顆粒流314推向物件310。一旦撞擊到物件310上，則熔融的粉末變平、迅速凝固、並形成附著於物件310的塗層312。影響塗層312之厚度、密度及粗糙度的參數包括粉末的類型、粉末的尺寸分佈、粉末進料速率、電漿氣體成分、電漿氣體流動速率、能量輸入、噴炬偏移距離、基材冷卻等。如參照第4圖所討論的，依據實施例將這些參數最佳化來形成具有內置壓縮應力的緻密電漿噴灑塗層。 The powder 308 is injected into a plasma spray or torch (for example, by powder propelling gas), where the intense temperature melts the powder and pushes the material toward the object 310 as a stream of molten particles 314. Once it hits the object 310, the molten powder becomes flat, rapidly solidifies, and forms a coating 312 attached to the object 310. The parameters affecting the thickness, density and roughness of the coating 312 include powder type, powder size distribution, powder feed rate, plasma gas composition, plasma gas flow rate, energy input, torch offset distance, substrate Cool etc. As discussed with reference to Fig. 4, these parameters are optimized according to the embodiment to form a dense plasma spray coating with built-in compressive stress.

第4圖為圖示依據一實施例用於製造塗佈物件的製程400之流程圖。製程400的操作可以藉由各種製造機器來進行。將參照任何上述可被用於反應離子蝕刻或電漿蝕刻系統的物件來描述製程400的操作。 FIG. 4 is a flowchart illustrating a process 400 for manufacturing a coated object according to an embodiment. The operation of the process 400 can be performed by various manufacturing machines. The operation of the process 400 will be described with reference to any of the above-mentioned objects that can be used in a reactive ion etching or plasma etching system.

在方塊402，對用於電漿噴灑塗層的粉末進行最佳化。這可以包括最佳化複合陶瓷塗層的粉 末成分、粉末形狀、及粉末尺寸分佈。在一個實施例中，最佳化塗層包括、但不限於決定粉末類型(例如化學成分)、平均粉末尺寸、及粉末進料速率。可以選擇粉末的類型來產生如先前描述的塗層。可以選擇具有特定成分、純度及粒徑的原始陶瓷粉末。陶瓷粉末可以由Y₂O₃、Y₄Al₂O₉、Y₃Al₅O₁₂(YAG)、或其他含氧化釔的陶瓷形成。此外，陶瓷粉末可以與Y₂O₃、ZrO₂、Al₂O₃、HfO₂、Er₂O₃、Nd₂O₃、Nb₂O₅、CeO₂、Sm₂O₃、Yb₂O₃、或其他氧化物及/或玻璃粉末中之一者或更多者組合。然後將原始陶瓷粉末混合。在一個實施例中，將Y₂O₃、Al₂O₃及ZrO₂的原始陶瓷粉末混合在一起用於複合陶瓷塗層。在一個實施例中，粉末配方為約53莫耳%的Y₂O₃、37莫耳%的Al₂O₃、及10莫耳%的ZrO₂。在一個實施例中，這些原料陶瓷粉末可以具有99.9%或更高的純度。可以利用例如球磨來混合原始陶瓷粉末。在將陶瓷粉末混合之後，可以在指定的煅燒時間和溫度下煅燒該等陶瓷粉末。 At block 402, the powder for the plasma spray coating is optimized. This can include optimizing the powder composition, powder shape, and powder size distribution of the composite ceramic coating. In one embodiment, the optimized coating includes, but is not limited to, determining the powder type (e.g., chemical composition), average powder size, and powder feed rate. The type of powder can be selected to produce the coating as previously described. You can choose the original ceramic powder with specific composition, purity and particle size. The ceramic powder may be formed of Y ₂ O ₃ , Y ₄ Al ₂ O ₉ , Y ₃ Al ₅ O ₁₂ (YAG), or other yttrium oxide-containing ceramics. In addition, the ceramic powder can be combined with Y ₂ O ₃ , ZrO ₂ , Al ₂ O ₃ , HfO ₂ , Er ₂ O ₃ , Nd ₂ O ₃ , Nb ₂ O ₅ , CeO ₂ , Sm ₂ O ₃ , Yb ₂ O ₃ , Or a combination of one or more of other oxides and/or glass powders. Then the original ceramic powder is mixed. In one embodiment, _{the original ceramic powders of Y 2} O ₃ , Al ₂ O ₃ and ZrO ₂ are mixed together for composite ceramic coating. In one embodiment, the powder formulation is about 53 mol% Y ₂ O ₃ , 37 mol% Al ₂ O ₃ , and 10 mol% ZrO ₂ . In an embodiment, these raw ceramic powders may have a purity of 99.9% or higher. The raw ceramic powder can be mixed using, for example, a ball mill. After mixing the ceramic powders, the ceramic powders can be calcined at a specified calcination time and temperature.

在一個實施例中，陶瓷粉末包括62.93莫耳比(莫耳%)的Y₂O₃、23.23莫耳%的ZrO₂及13.94莫耳%的Al₂O₃。在另一個實施例中，陶瓷粉末可以包括範圍在50-75莫耳%的Y₂O₃、範圍在10-30莫耳%的ZrO₂、及範圍在10-30莫耳%的Al₂O₃。在另一個實施例中，陶瓷粉末可以包括範圍 在40-100莫耳%的Y₂O₃、範圍在0-60莫耳%的ZrO₂、及範圍在0-10莫耳%的Al₂O₃。在另一個實施例中，陶瓷粉末可以包括範圍在40-60莫耳%的Y₂O₃、範圍在30-50莫耳%的ZrO₂、及範圍在10-20莫耳%的Al₂O₃。在另一個實施例中，陶瓷粉末可以包括範圍在40-50莫耳%的Y₂O₃、範圍在20-40莫耳%的ZrO₂、及範圍在20-40莫耳%的Al₂O₃。在另一個實施例中，陶瓷粉末可以包括範圍在70-90莫耳%的Y₂O₃、範圍在0-20莫耳%的ZrO₂、及範圍在10-20莫耳%的Al₂O₃。在另一個實施例中，陶瓷粉末可以包括範圍在60-80莫耳%的Y₂O₃、範圍在0-10莫耳%的ZrO₂、及範圍在20-40莫耳%的Al₂O₃。在另一個實施例中，陶瓷粉末可以包括範圍在40-60莫耳%的Y₂O₃、範圍在0-20莫耳%的ZrO₂、及範圍在30-40莫耳%的Al₂O₃。在其他的實施例中，也可以將其他的分配使用於陶瓷粉末。 In one embodiment, the ceramic powder includes Y ₂ O _{3 at 62.93 mol% (mol %), ZrO 2 at} 23.23 mol %, _{and Al 2} O _{3 at} 13.94 mol %. In another embodiment, the ceramic powder may include Y ₂ O ₃ in the range of _{50-75 mol%, ZrO 2} in the range of 10-30 mol%, and Al ₂ O in the range of 10-30 mol% ₃ . In another embodiment, the ceramic powder may include Y ₂ O _{3 in the range of 40-100 mol%, ZrO 2} in the range of 0-60 mol% _{, and Al 2} O in the range of 0-10 mol% ₃ . In another embodiment, the ceramic powder may include Y ₂ O _{3 in the range of 40-60 mol%, ZrO 2} in the range of 30-50 mol% _{, and Al 2} O in the range of 10-20 mol% ₃ . In another embodiment, the ceramic powder may include Y ₂ O ₃ in the range of _{40-50 mol%, ZrO 2} in the range of 20-40 mol%, and Al ₂ O in the range of 20-40 mol% ₃ . In another embodiment, the ceramic powder may include Y ₂ O _{3 in the range of 70-90 mol%, ZrO 2} in the range of 0-20 mol% _{, and Al 2} O in the range of 10-20 mol% ₃ . In another embodiment, the ceramic powder may include Y ₂ O _{3 in the range of 60-80 mol%, ZrO 2} in the range of 0-10 mol% _{, and Al 2} O in the range of 20-40 mol% ₃ . In another embodiment, the ceramic powder may include Y ₂ O _{3 in the range of 40-60 mol%, ZrO 2} in the range of 0-20 mol% _{, and Al 2} O in the range of 30-40 mol% ₃ . In other embodiments, other distributions can also be used for the ceramic powder.

在一實施例中，將粉末最佳化以在電漿噴灑過程中保持非晶相。在一實例中，可以藉由控制粉末配方來控制非晶相。特別配製的粉末可以在不經相變之下直接固化成非晶相。 In one embodiment, the powder is optimized to maintain the amorphous phase during plasma spraying. In one example, the amorphous phase can be controlled by controlling the powder formulation. The specially formulated powder can be directly solidified into an amorphous phase without phase change.

在方塊404，最佳化電漿噴灑參數以最大化粉末的熔化、減少表面結核的數量、增加噴濺表面、降低粗糙度、及減少孔隙率。此外，將電漿噴灑 參數最佳化以使粉末顆粒變得完全熔化，並使這些完全熔化的顆粒在未經歷相變之下固化成非晶相。在實施例中，將電漿噴灑參數最佳化以在電漿噴灑過程中產生盤餅形的材料噴濺。盤餅形噴濺沉積在彼此之上，從而增長出形成陶瓷塗層的許多盤餅形噴濺層。在一個實施例中，最佳化電漿噴灑參數包括、但不限於決定電漿槍功率和噴灑載氣的成分。最佳化電漿噴灑參數還可以包括決定特定噴灑塗佈順序及用於在基材(例如電漿隔板)上施加塗層(例如複合陶瓷塗層)的製程條件。 At block 404, the plasma spraying parameters are optimized to maximize powder melting, reduce the number of surface nodules, increase the spray surface, reduce roughness, and reduce porosity. In addition, spray the plasma The parameters are optimized so that the powder particles become completely melted, and the completely melted particles solidify into an amorphous phase without undergoing a phase change. In the embodiment, the plasma spraying parameters are optimized to produce a disc-shaped material spray during the plasma spraying process. The disc-shaped splashes are deposited on top of each other, thereby growing a number of disc-shaped splash layers that form the ceramic coating. In one embodiment, the optimized plasma spraying parameters include, but are not limited to, determining the power of the plasma gun and the composition of the sprayed carrier gas. Optimizing plasma spraying parameters can also include determining a specific spray coating sequence and process conditions for applying a coating (such as a composite ceramic coating) on a substrate (such as a plasma separator).

例如，表A顯示在電漿噴灑過程中實現盤餅形噴濺的例示塗層製程參數。 For example, Table A shows exemplary coating process parameters that achieve disc-shaped spray during plasma spraying.

在一個實施例中，將參數最佳化以最大化熔化、減少結核數量(可以表示粉末的熔化增加)、 增加噴濺的表面(可以表示粉末的熔化增加)、降低表面粗糙度、及減少塗層的孔隙率，此舉將減少晶圓上的顆粒數，因為顆粒被擊出的可能性較低。此外，將該等參數最佳化以使熔化的顆粒在未經歷相變之下固化成非晶相。 In one embodiment, the parameters are optimized to maximize melting and reduce the number of nodules (which can indicate an increase in powder melting), Increasing the splashed surface (which can indicate an increase in powder melting), reducing the surface roughness, and reducing the porosity of the coating will reduce the number of particles on the wafer because the particles are less likely to be knocked out. In addition, these parameters are optimized so that the molten particles solidify into an amorphous phase without undergoing a phase change.

例如，最佳化的電漿電流可以在介於約400A至約1000A的範圍中。進一步最佳化的電漿電流可以在介於約500A至約800A的範圍中。在另一個實例中，電漿噴灑系統的最佳化噴炬支架定位可以在離物件(例如襯裡套組或電漿隔板)約50mm和約250mm之間的距離。噴炬支架的進一步最佳化定位可以在離物件約70mm和約200mm之間的距離。在又另一個實例中，通過電漿噴灑系統的最佳化氣流可以具有約40L/min和約400L/min之間的速率。通過電漿噴灑系統的進一步最佳化氣流可以具有約50L/min和約300L/min之間的速率。 For example, the optimized plasma current may be in the range of about 400A to about 1000A. The plasma current that is further optimized may be in the range of about 500A to about 800A. In another example, the optimized torch holder positioning of the plasma spray system can be at a distance between about 50 mm and about 250 mm from the object (such as a liner set or plasma baffle). The further optimized positioning of the torch holder can be at a distance between about 70 mm and about 200 mm from the object. In yet another example, the optimized air flow through the plasma spray system may have a rate between about 40 L/min and about 400 L/min. The further optimized air flow through the plasma spray system may have a rate between about 50 L/min and about 300 L/min.

在方塊406，依據選擇的參數來塗佈物件。熱噴灑技術和電漿噴灑技術可以使用所選擇的參數來熔化材料(例如陶瓷粉末)，並將熔化的材料噴灑到物件上。在沉積過程中陶瓷粉末可以被完全熔化，而且可以撞擊目標主體以在該目標主體上形成相對大的盤餅形噴濺。熱噴灑或電漿噴灑的陶瓷塗層可以由增長出的許多重疊的盤餅形噴濺組成。從概念上來說，陶瓷塗層是由許多重疊的盤餅形噴濺層製成 的，該等重疊的盤餅形噴濺層形成單一的塗層。熱噴灑或電漿噴灑的陶瓷塗層可以具有約2-15密耳的厚度。在一個實例中，依據複合陶瓷塗層的侵蝕率來選擇該厚度，以確保物件具有至少大約5000射頻小時(RFHrs)曝露於電漿環境的使用壽命，其中RFHrs是元件被用於處理的時數之量測值。換句話說，假使複合陶瓷塗層的侵蝕率為約0.005密耳/小時，則對於約2500RF小時的使用壽命來說，可以形成厚度約12.5密耳的陶瓷塗層。 At block 406, the object is coated according to the selected parameters. Thermal spray technology and plasma spray technology can use selected parameters to melt materials (such as ceramic powder) and spray the melted materials onto the object. The ceramic powder can be completely melted during the deposition process, and can hit the target body to form a relatively large disc-shaped spray on the target body. Thermal spray or plasma sprayed ceramic coatings can be composed of many overlapping disc-shaped sprays that grow out. Conceptually, the ceramic coating is made of many overlapping disc-shaped spray layers Yes, these overlapping disc-shaped sprayed layers form a single coating. The thermally sprayed or plasma sprayed ceramic coating may have a thickness of about 2-15 mils. In one example, the thickness is selected based on the erosion rate of the composite ceramic coating to ensure that the object has a service life of at least about 5000 radio frequency hours (RFHrs) exposed to the plasma environment, where RFHrs is the number of hours the element is used for processing The measured value. In other words, if the erosion rate of the composite ceramic coating is about 0.005 mils/hour, for a service life of about 2500 RF hours, a ceramic coating with a thickness of about 12.5 mils can be formed.

可以在多個噴灑回合中進行電漿噴灑製程。對於每個回合，可以改變電漿噴嘴的角度，以保持與被噴灑表面的相對角度。例如，可以旋轉電漿噴嘴，以與被噴灑的物件表面保持大約45度至大約90度的角度。 The plasma spraying process can be carried out in multiple spraying rounds. For each round, the angle of the plasma nozzle can be changed to maintain the relative angle to the surface being sprayed. For example, the plasma nozzle can be rotated to maintain an angle of about 45 degrees to about 90 degrees with the surface of the object being sprayed.

在一個實施例中，可以最佳化電漿噴灑順序，以實現改良的塗層(例如較少的孔隙率、減少的表面結核、大的盤餅形噴濺、及降低的表面粗糙度)、以及減少零星顆粒再沉積到塗層表面上(大多來自物件的背側塗層)。 In one embodiment, the plasma spraying sequence can be optimized to achieve improved coatings (e.g., less porosity, reduced surface nodules, large disc-shaped splashes, and reduced surface roughness), And to reduce the redeposition of sporadic particles on the coating surface (mostly from the backside coating of the object).

在方塊408中，可以進行電漿塗層的特徵化。這可以包括測定表面形態、粗糙度、孔隙率、辨別表面結核等等。 In block 408, characterization of the plasma coating may be performed. This can include measuring surface morphology, roughness, porosity, identifying surface nodules, and so on.

第5圖圖示噴濺表面的掃描電子顯微鏡(SEM)視圖。視圖501圖示具有20微米尺度的 3000倍放大塗層噴濺照片(例如一英吋樣品的3000倍掃描電子顯微照片(SEM))。視圖502圖示具有50微米尺度的1000倍放大塗層噴濺照片(例如一英吋樣品的1000倍掃描電子顯微照片(SEM))。視圖503圖示依據其中粉末配方和電漿噴灑被最佳化以為塗層形成無裂紋的盤餅形噴濺的實施例，具有100微米尺度的500倍放大塗層噴濺照片(例如一英吋樣品的500倍掃描電子顯微照片(SEM))。視圖504圖示具有20微米尺度的3000倍放大塗層噴濺照片(例如一英吋樣品的3000倍掃描電子顯微照片(SEM))。視圖505圖示具有50微米尺度的1000倍放大塗層噴濺照片(例如一英吋樣品的1000倍掃描電子顯微照片(SEM))。視圖506圖示具有100微米尺度的500倍放大塗層噴濺照片(例如一英吋樣品的500倍掃描電子顯微照片(SEM))，其中粉末配方和電漿噴灑未被最佳化來為塗層形成無裂紋的盤餅形噴濺。 Figure 5 illustrates a scanning electron microscope (SEM) view of the sputtered surface. View 501 illustrates a 3000x magnification of the coating splash photo (e.g. 3000x scanning electron micrograph (SEM) of a one-inch sample). View 502 illustrates a 1000x magnified coating splash photograph (e.g., a 1000x scanning electron micrograph (SEM) of a one-inch sample) with a scale of 50 microns. View 503 illustrates an embodiment in which the powder formulation and plasma spraying are optimized to form a crack-free disc-shaped spray of the coating, with a 500-fold magnification of the coating spray photo (e.g., one inch) on a scale of 100 micrometers. A 500x scanning electron micrograph (SEM) of the sample). View 504 illustrates a 3000x magnified coating splash photograph (e.g., a 3000x scanning electron micrograph (SEM) of a one-inch sample) with a scale of 20 microns. View 505 illustrates a 1000x magnified coating splash photograph (e.g., a 1000x scanning electron micrograph (SEM) of a one-inch sample) with a scale of 50 microns. View 506 illustrates a 500x magnified coating splash photo with a scale of 100 microns (for example, a 500x scanning electron micrograph (SEM) of a one-inch sample), where the powder formulation and plasma spraying are not optimized for The coating forms a crack-free disc-shaped spray.

如第5圖所示，與塗層的視圖504、505、及506相比，被最佳化以具有盤餅形噴濺的塗層之視圖501、502及503顯示較少的裂紋或無裂紋。例如，盤餅形噴濺會具有近似圓形和扁平的似圓盤形狀。視圖501、502及503的噴濺具有比視圖504、505、及506的噴濺更光滑、無裂紋、圓形的邊緣及更像圓盤的外觀。與具有其他形狀的噴濺之塗 層相比，使用被最佳化以形成盤餅形噴濺的粉末和電漿噴灑所形成的塗層之評估表現出改良的形態和孔隙率。例如，由於粉末的改良熔化、降低的粗糙度、及減少的孔隙率，依據實施例的塗層傾向於具有較少的結核和較大的噴濺，所有這些都有助於改良晶圓上顆粒表現。 As shown in Figure 5, the views 501, 502, and 503 of the coating optimized to have a pie-shaped spray show fewer or no cracks compared to the views 504, 505, and 506 of the coating . For example, a disc-shaped splash will have an approximately circular and flat disc-like shape. The splashes of views 501, 502, and 503 have smoother, crack-free, rounded edges, and a disk-like appearance than the splashes of views 504, 505, and 506. Coating with splashes with other shapes Compared with the layers, the evaluation of coatings formed by using powders optimized to form disc-shaped sprays and plasma sprays showed improved morphology and porosity. For example, due to the improved melting of the powder, reduced roughness, and reduced porosity, the coatings according to the examples tend to have fewer nodules and larger splashes, all of which help to improve the particles on the wafer. which performed.

第6圖圖示塗層在噴灑過程中的原位曲率變化，其中圖601圖示比較的塗層而圖602圖示依據一實施例的塗層。曲率變化是在噴灑過程中塗層中的應力水平之指標。圖601顯示正曲率變化，正曲率變化可以表示拉伸應力，而且會是通常具有較多立方晶相的塗層之結果。圖602顯示負曲率變化，負曲率變化可以表示壓縮應力，而且會是通常具有較多非晶相的塗層之結果。 Figure 6 illustrates the in-situ curvature change of the coating during spraying, where Figure 601 illustrates the comparative coating and Figure 602 illustrates the coating according to an embodiment. The curvature change is an indicator of the stress level in the coating during spraying. Graph 601 shows a positive curvature change. A positive curvature change can indicate tensile stress and is the result of coatings that usually have more cubic phases. Graph 602 shows a negative curvature change, which can indicate compressive stress and is the result of coatings that usually have more amorphous phases.

前面的描述闡述了大量的具體細節，例如特定系統、元件、方法等之實例，以對本揭示的若干實施例提供良好的理解。然而，對於所屬技術領域中具有通常知識者而言將顯而易見的是，至少一些本揭示的實施例可以在沒有這些具體細節之下實施。在其他的情況下，眾所周知的元件或方法未被詳細描述或是以簡單的方塊圖型式呈現，以避免不必要地模糊了本揭示。因此，所闡述的具體細節只是例示性的。具體的實施方式可以與這些例示性細節不同，而且仍被視為是在本揭示的範圍內。 The foregoing description sets forth a large number of specific details, such as examples of specific systems, elements, methods, etc., to provide a good understanding of several embodiments of the present disclosure. However, it will be obvious to those skilled in the art that at least some of the embodiments of the present disclosure can be implemented without these specific details. In other cases, well-known elements or methods are not described in detail or are presented in simple block diagram form to avoid unnecessarily obscuring the present disclosure. Therefore, the specific details set forth are only illustrative. Specific implementations may differ from these illustrative details and still be considered within the scope of this disclosure.

貫穿本說明書，提及「一個實施例」或「一實施例」意指關於該實施例描述的特定特徵、結構、或特性被包括在至少一個實施例中。因此，貫穿本說明書在不同的地方出現的片語「在一個實施例中」或「在一實施例中」不一定全都指同一個實施例。此外，術語「或」意圖表示包含性的「或」而不是排他性的「或」。術語「約」和「大約」是指一個值加或減10%。 Throughout this specification, reference to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described with respect to the embodiment is included in at least one embodiment. Therefore, phrases "in one embodiment" or "in an embodiment" appearing in different places throughout this specification do not necessarily all refer to the same embodiment. In addition, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or". The terms "about" and "approximately" refer to a value plus or minus 10%.

雖然以特定的順序圖示和描述本文的方法之操作，但也可以改變每個方法的操作順序，使得某些操作可以以相反的順序進行，或使得某些操作可以至少部分與其他操作同時進行。在另一個實施例中，不同操作的指令或子操作可以以間歇的及/或交替的方式進行。 Although the operations of the methods herein are illustrated and described in a specific order, the order of operations of each method can also be changed so that some operations can be performed in the reverse order, or some operations can be performed at least partially simultaneously with other operations . In another embodiment, instructions or sub-operations of different operations may be performed in an intermittent and/or alternate manner.

應當理解的是，上面的描述意圖為說明性的而不是限制性的。在閱讀和理解了以上的描述之後，許多其他的實施例對於所屬技術領域中具有通常知識者而言將是顯而易見的。因此，本揭示的範圍應參照所附申請專利範圍連同該等申請專利範圍所賦予的均等物之全部範圍來決定。 It should be understood that the above description is intended to be illustrative and not restrictive. After reading and understanding the above description, many other embodiments will be obvious to those with ordinary knowledge in the technical field. Therefore, the scope of the present disclosure should be determined with reference to the scope of the attached patent application and the full scope of the equivalents granted by the scope of the patent application.

300‧‧‧系統 300‧‧‧System

302‧‧‧氣體輸送管 302‧‧‧Gas delivery pipe

304‧‧‧陽極 304‧‧‧Anode

306‧‧‧電弧 306‧‧‧Arc

308‧‧‧粉末 308‧‧‧Powder

310‧‧‧物件 310‧‧‧Object

312‧‧‧塗層 312‧‧‧Coating

314‧‧‧熔融顆粒流 314‧‧‧Melted particle flow

316‧‧‧陰極 316‧‧‧Cathode

318‧‧‧電漿氣體 318‧‧‧Plasma gas

320‧‧‧噴嘴 320‧‧‧Nozzle

Claims (21)

一種塗佈陶瓷的物件，包含：一主體，包含Al、Al₂O₃、AlN、Y₂O₃、YSZ、或SiC中之至少一者；以及一電漿噴灑陶瓷塗層，在該主體之至少一個表面上，該陶瓷塗層包含一化合物，該化合物包含Y₂O₃、Al₂O₃、及ZrO₂，該陶瓷塗層進一步包含複數個重疊的盤餅形噴濺，其中該陶瓷塗層具有一非晶相，以及該非晶相在塗層沉積過程中沒有相變，以及其中該盤餅形噴濺中的各者具有一直徑，該直徑比該噴濺的一厚度大許多級數量級。 A ceramic-coated object, comprising: a body containing _{at least one of Al, Al 2} O ₃ , AlN, Y ₂ O ₃ , YSZ, or SiC; and a plasma sprayed ceramic coating on the body On at least one surface, the ceramic coating includes a compound including Y ₂ O ₃ , Al ₂ O ₃ , and ZrO ₂ , the ceramic coating further includes a plurality of overlapping disc-shaped sprays, wherein the ceramic coating The layer has an amorphous phase, and the amorphous phase has no phase change during the coating deposition process, and each of the disc-shaped splashes has a diameter that is many orders of magnitude larger than a thickness of the splash . 如請求項1所述之物件，其中該陶瓷塗層包含約53莫耳%的Y₂O₃、約10莫耳%的ZrO₂、及約37莫耳%的Al₂O₃。 The article according to claim 1, wherein the ceramic coating comprises about 53 mol% Y ₂ O ₃ , about 10 mol% ZrO ₂ , and about 37 mol% Al ₂ O ₃ . 如請求項1所述之物件，其中該陶瓷塗層具有一選自一列表的組成物，該列表由以下組成：50-75莫耳%的Y₂O₃、10-30莫耳%的ZrO₂、及10-30莫耳%的Al₂O₃；40-100莫耳%的Y₂O₃、0-60莫耳%的ZrO₂、及0-10莫耳%的Al₂O₃；40-60莫耳%的Y₂O₃、30-50莫耳%的ZrO₂、及10-20莫耳%的Al₂O₃； 40-50莫耳%的Y₂O₃、20-40莫耳%的ZrO₂、及20-40莫耳%的Al₂O₃；70-90莫耳%的Y₂O₃、0-20莫耳%的ZrO₂、及10-20莫耳%的Al₂O₃；60-80莫耳%的Y₂O₃、0-10莫耳%的ZrO₂、及20-40莫耳%的Al₂O₃；40-60莫耳%的Y₂O₃、0-20莫耳%的ZrO₂、及30-40莫耳%的Al₂O₃；30-60莫耳%的Y₂O₃、0-20莫耳%的ZrO₂、及30-60莫耳%的Al₂O₃；以及20-40莫耳%的Y₂O₃、20-80莫耳%的ZrO₂、及0-60莫耳%的Al₂O₃。 The article according to claim 1, wherein the ceramic coating has a composition selected from a list consisting of: 50-75 mol% Y ₂ O ₃ , 10-30 mol% ZrO _2. And 10-30 mol% Al ₂ O ₃ ; 40-100 mol% Y ₂ O ₃ , 0-60 mol% ZrO ₂ , and 0-10 mol% Al ₂ O ₃ ; 40-60 mol% Y ₂ O ₃ , 30-50 mol% ZrO ₂ , and 10-20 mol% Al ₂ O ₃ ; 40-50 mol% Y ₂ O ₃ , 20-40 Mole% ZrO ₂ and 20-40 Mole% Al ₂ O ₃ ; 70-90 Mole% Y ₂ O ₃ , 0-20 Mole% ZrO ₂ , and 10-20 Mole% Al ₂ O ₃ ; 60-80 mol% Y ₂ O ₃ , 0-10 mol% ZrO ₂ , and 20-40 mol% Al ₂ O ₃ ; 40-60 mol% Y ₂ O _3. 0-20 mol% of ZrO ₂ and 30-40 mol% of Al ₂ O ₃ ; 30-60 mol% of Y ₂ O ₃ , 0-20 mol% of ZrO ₂ , and 30- 60 mol% Al ₂ O ₃ ; and 20-40 mol% Y ₂ O ₃ , 20-80 mol% ZrO ₂ , and 0-60 mol% Al ₂ O ₃ . 如請求項1所述之物件，其中該陶瓷塗層具有一內部壓縮應力。 The article according to claim 1, wherein the ceramic coating has an internal compressive stress. 如請求項1所述之物件，其中該物件包含一襯裡套組，該襯裡套組包含一前側、一後側、一上襯裡、一狹縫閥門、一電漿隔板、一下襯裡、及一陰極襯裡。 The article according to claim 1, wherein the article includes a lining set including a front side, a rear side, an upper lining, a slit valve, a plasma partition, a lower lining, and a Cathode lining. 如請求項1所述之物件，其中大多數的該盤餅形噴濺無裂紋。 According to the article described in claim 1, most of the disc-shaped sprays have no cracks. 如請求項1所述之物件，其中該陶瓷塗層具有2-15密耳的厚度及至少5000小時在電漿環境中處理的使用壽命。 The article according to claim 1, wherein the ceramic coating has a thickness of 2-15 mils and a service life of at least 5000 hours when processed in a plasma environment. 如請求項1所述之物件，其中該複數個噴濺中的各者具有約30微米至約100微米的一直徑。 The article according to claim 1, wherein each of the plurality of splashes has a diameter of about 30 microns to about 100 microns. 一種用於施加一陶瓷塗層的方法，包含以下步驟：對一電漿噴灑系統設定一電漿電流於一約100A至約1000A的值；定位該電漿噴灑系統之一噴炬於距一主體約60mm和約250mm之間的噴炬支架距離；使一第一氣體以介於約30L/min和約400L/min之間的速率流過該電漿噴灑系統；以及進行電漿噴灑塗佈以在該主體上形成一陶瓷塗層，該陶瓷塗層具有一內部壓縮應力及一非晶相，以及該非晶相在塗層沉積過程中沒有相變，其中該陶瓷塗層包含一Y₂O₃、Al₂O₃、及ZrO₂之化合物，及其中該陶瓷塗層之噴濺具有一盤餅形，該盤餅形噴濺中的各者具有一直徑，該直徑比該噴濺的一厚度大許多級數量級。 A method for applying a ceramic coating includes the following steps: setting a plasma current to a value of about 100A to about 1000A for a plasma spraying system; positioning a torch of the plasma spraying system away from a main body The torch holder distance between about 60mm and about 250mm; making a first gas flow through the plasma spray system at a rate between about 30L/min and about 400L/min; and performing plasma spray coating to A ceramic coating is formed on the main body, the ceramic coating has an internal compressive stress and an amorphous phase, and the amorphous phase has no phase change during the coating deposition process, wherein the ceramic coating includes a Y ₂ O ₃ , Al ₂ O ₃ , and ZrO ₂ compound, and the spray of the ceramic coating in the ceramic coating has a disc shape, each of the disc-shaped splashes has a diameter that is greater than a thickness of the splash Many orders of magnitude larger. 如請求項9所述之方法，其中該陶瓷塗層包含約53莫耳%的Y₂O₃、約10莫耳%的ZrO₂、及約37莫耳%的Al₂O₃。 The method of claim 9, wherein the ceramic coating comprises about 53 mol% Y ₂ O ₃ , about 10 mol% ZrO ₂ , and about 37 mol% Al ₂ O ₃ . 如請求項9所述之方法，其中該陶瓷塗層具有一選自一列表的組成物，該列表由以下組 成：50-75莫耳%的Y₂O₃、10-30莫耳%的ZrO₂、及10-30莫耳%的Al₂O₃；40-100莫耳%的Y₂O₃、0-60莫耳%的ZrO₂、及0-10莫耳%的Al₂O₃；40-60莫耳%的Y₂O₃、30-50莫耳%的ZrO₂、及10-20莫耳%的Al₂O₃；40-50莫耳%的Y₂O₃、20-40莫耳%的ZrO₂、及20-40莫耳%的Al₂O₃；70-90莫耳%的Y₂O₃、0-20莫耳%的ZrO₂、及10-20莫耳%的Al₂O₃；60-80莫耳%的Y₂O₃、0-10莫耳%的ZrO₂、及20-40莫耳%的Al₂O₃；40-60莫耳%的Y₂O₃、0-20莫耳%的ZrO₂、及30-40莫耳%的Al₂O₃；30-60莫耳%的Y₂O₃、0-20莫耳%的ZrO₂、及30-60莫耳%的Al₂O₃；以及20-40莫耳%的Y₂O₃、20-80莫耳%的ZrO₂、及0-60莫耳%的Al₂O₃。 The method according to claim 9, wherein the ceramic coating has a composition selected from a list consisting of: 50-75 mol% Y ₂ O ₃ , 10-30 mol% ZrO _2. And 10-30 mol% Al ₂ O ₃ ; 40-100 mol% Y ₂ O ₃ , 0-60 mol% ZrO ₂ , and 0-10 mol% Al ₂ O ₃ ; 40-60 mol% Y ₂ O ₃ , 30-50 mol% ZrO ₂ , and 10-20 mol% Al ₂ O ₃ ; 40-50 mol% Y ₂ O ₃ , 20-40 Mole% ZrO ₂ and 20-40 Mole% Al ₂ O ₃ ; 70-90 Mole% Y ₂ O ₃ , 0-20 Mole% ZrO ₂ , and 10-20 Mole% Al ₂ O ₃ ; 60-80 mol% Y ₂ O ₃ , 0-10 mol% ZrO ₂ , and 20-40 mol% Al ₂ O ₃ ; 40-60 mol% Y ₂ O _3. 0-20 mol% of ZrO ₂ and 30-40 mol% of Al ₂ O ₃ ; 30-60 mol% of Y ₂ O ₃ , 0-20 mol% of ZrO ₂ , and 30- 60 mol% Al ₂ O ₃ ; and 20-40 mol% Y ₂ O ₃ , 20-80 mol% ZrO ₂ , and 0-60 mol% Al ₂ O ₃ . 如請求項9所述之方法，其中該電漿電流在一介於約450A和約800A之間的範圍中。 The method of claim 9, wherein the plasma current is in a range between about 450A and about 800A. 如請求項9所述之方法，其中該電漿噴灑系統之該噴炬支架距離係介於約60mm和約 200mm之間。 The method according to claim 9, wherein the torch support distance of the plasma spraying system is between about 60mm and about Between 200mm. 如請求項9所述之方法，其中大多數具有該盤餅形的噴濺無裂紋。 The method according to claim 9, wherein most of the sprays having the disc shape have no cracks. 如請求項9所述之方法，其中該第一氣體為一氣體混合物之一主要氣體，該氣體混合物包含該主要氣體及一次要氣體，其中該氣體混合物係選自一由以下組成之列表：一氬氣和氫氣之混合物、一氬氣和氦氣之混合物、一氮氣和氫氣之混合物、一氮氣和氦氣之混合物、以及一氬氣和氧氣之混合物。 The method according to claim 9, wherein the first gas is a main gas of a gas mixture, the gas mixture includes the main gas and the primary gas, and the gas mixture is selected from a list consisting of: a A mixture of argon and hydrogen, a mixture of argon and helium, a mixture of nitrogen and hydrogen, a mixture of nitrogen and helium, and a mixture of argon and oxygen. 如請求項15所述之方法，其中使該第一氣體以介於約35L/min和約300L/min之間的速率流過該電漿噴灑系統。 The method of claim 15, wherein the first gas is caused to flow through the plasma spray system at a rate between about 35 L/min and about 300 L/min. 如請求項15所述之方法，其中使該次要氣體以介於約3L/min和約100L/min之間的速率流過該電漿噴灑系統。 The method of claim 15, wherein the secondary gas is caused to flow through the plasma spray system at a rate between about 3 L/min and about 100 L/min. 如請求項9所述之方法，其中該等噴濺在該非晶相中不經相變而固化。 The method according to claim 9, wherein the splashes are solidified without phase change in the amorphous phase. 如請求項9所述之方法，其中進行該電漿噴灑塗佈的該電漿噴灑系統具有一約6mm的噴嘴直徑。 The method according to claim 9, wherein the plasma spray system for performing the plasma spray coating has a nozzle diameter of about 6 mm. 一種塗佈陶瓷的物件，包含： 一主體；以及一電漿噴灑陶瓷塗層，在該主體之至少一個表面上，該陶瓷塗層包含一化合物，該化合物包含Y₄Al₂O₉及一Y₂O₃-ZrO₂固溶體，該陶瓷塗層進一步包含複數個重疊的盤餅形噴濺，其中該盤餅形噴濺中的各者具有一直徑，該直徑比該噴濺的一厚度大許多級數量級，以及該陶瓷塗層具有一非晶相及內部壓縮應力，以及該非晶相在塗層沉積過程中沒有相變。 A ceramic-coated object, comprising: a main body; and a plasma sprayed ceramic coating. On at least one surface of the main body, the ceramic coating includes a compound including Y ₄ Al ₂ O ₉ and a Y ₂ O ₃ -ZrO ₂ solid solution, the ceramic coating further comprises a plurality of overlapping disc-shaped splashes, wherein each of the disc-shaped splashes has a diameter that is greater than a thickness of the splash Many orders of magnitude larger, and the ceramic coating has an amorphous phase and internal compressive stress, and the amorphous phase has no phase change during the coating deposition process. 如請求項20所述之物件，其中大多數的該盤餅形噴濺無裂紋，以及其中該陶瓷塗層具有2-15密耳的厚度。 The article according to claim 20, wherein most of the disc-shaped sprays are free of cracks, and wherein the ceramic coating has a thickness of 2-15 mils.

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