TWI722412B - Substrate treatment method and substrate treatment apparatus - Google Patents
Substrate treatment method and substrate treatment apparatus Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
本發明係關於基板處理方法及基板處理裝置。 The present invention relates to a substrate processing method and a substrate processing apparatus.
專利文獻1記載之基板處理裝置,係用於對晶圓執行氮化矽膜之蝕刻處理的單片型裝置。蝕刻處理係用於自晶圓之表面對氮化矽膜選擇性地進行蝕刻的處理,於蝕刻處理中,使用磷酸水溶液作為蝕刻液。 The substrate processing apparatus described in Patent Document 1 is a monolithic apparatus for performing etching processing of a silicon nitride film on a wafer. The etching process is a process for selectively etching the silicon nitride film from the surface of the wafer. In the etching process, an aqueous phosphoric acid solution is used as an etching solution.
具體而言,基板處理裝置係對晶圓之表面供給磷酸水溶液,在被旋轉夾具所保持的晶圓之表面形成磷酸水溶液之液膜。然後,基板處理裝置係藉由加熱板加熱磷酸水溶液之液膜,使磷酸水溶液之液膜升溫。其結果,磷酸水溶液之對氮化矽膜的反應速度提高,可提高蝕刻速率。 Specifically, the substrate processing apparatus supplies a phosphoric acid aqueous solution to the surface of the wafer, and forms a liquid film of the phosphoric acid aqueous solution on the surface of the wafer held by the rotating chuck. Then, the substrate processing apparatus heats the liquid film of the phosphoric acid aqueous solution with a hot plate to raise the temperature of the phosphoric acid aqueous solution. As a result, the reaction rate of the phosphoric acid aqueous solution to the silicon nitride film is increased, and the etching rate can be increased.
[專利文獻1]日本專利特開2015-53333號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2015-53333
本案發明人係著眼於在單片型之基板處理裝置中,進一步抑制複數之晶圓間的蝕刻速率之變化,並進一步抑制複數之晶 圓間的處理結果之偏差。尤其近年來,存在有被要求抑制複數之晶圓間的處理結果之些微偏差的情況。 The inventor of the present invention focused on further suppressing the variation of the etching rate between the plural wafers in a single-chip substrate processing apparatus, and further suppressing the deviation of the processing result between the plural wafers. Particularly in recent years, there have been cases where it is required to suppress slight deviations in the processing results between a plurality of wafers.
而且,本案發明人發現,於單片型之基板處理裝置中,若使用如磷酸水溶液般之高溫處理液,對複數之晶圓連續地進行蝕刻處理,則因處理液之熱放射(熱輻射)而熱蓄積於旋轉基部。 進而發現,因蓄積於旋轉基部的熱之影響,每處理1片之基板則蝕刻速度可能逐漸地上升。 Moreover, the inventor of the present case discovered that in a single-chip substrate processing apparatus, if a high-temperature processing liquid such as an aqueous phosphoric acid solution is used to continuously etch a plurality of wafers, the heat radiation (heat radiation) of the processing liquid The heat accumulates in the base of the rotation. Furthermore, it was found that due to the influence of the heat accumulated in the rotating base, the etching rate may gradually increase every time a substrate is processed.
換言之,發現了由於於旋轉基部蓄積有熱的影響,而於複數之基板間處理速度可能產生些微變化。 In other words, it was discovered that due to the influence of heat accumulated in the rotating base, the processing speed may slightly change between the plurality of substrates.
因此,本案發明人係自旋轉基部之熱蓄積的觀點上,針對基板處理方法及基板處理裝置進行了潛心研究。 Therefore, the inventor of the present case has conducted intensive research on the substrate processing method and the substrate processing apparatus from the viewpoint of the heat accumulation of the spin base.
本發明係有鑑於上述課題而完成者,其目的在於提供可抑制於複數之基板間處理速度產生變化的基板處理方法及基板處理裝置。 The present invention was made in view of the above-mentioned problems, and an object thereof is to provide a substrate processing method and a substrate processing apparatus that can suppress changes in processing speed between a plurality of substrates.
根據本發明之一態樣的基板處理方法,係包含有溫度調節步驟、及處理步驟。在溫度調節步驟中對保持基板而旋轉的基板保持部供給流體,調節上述基板保持部之溫度。在處理步驟中藉由處理液而對上述基板進行處理。 The substrate processing method according to one aspect of the present invention includes a temperature adjustment step and a processing step. In the temperature adjustment step, a fluid is supplied to the substrate holding portion that rotates while holding the substrate, and the temperature of the substrate holding portion is adjusted. In the processing step, the substrate is processed with a processing liquid.
較佳為,在本發明之基板處理方法中,上述基板保持部係包含有進行旋轉的旋轉基部、及複數之夾具構件。較佳為,複數之夾具構件係設於上述旋轉基部,保持上述基板。較佳為,在上述溫度調節步驟中,對上述旋轉基部供給上述流體,調節上述旋轉基部之溫度。 Preferably, in the substrate processing method of the present invention, the substrate holding portion includes a rotating base that rotates, and a plurality of jig members. Preferably, a plurality of clamp members are provided on the rotation base to hold the substrate. Preferably, in the temperature adjustment step, the fluid is supplied to the rotating base to adjust the temperature of the rotating base.
較佳為,在本發明之基板處理方法中,上述溫度調節步驟係於不同於上述處理步驟的時間帶作為單獨之步驟而執行。 Preferably, in the substrate processing method of the present invention, the above-mentioned temperature adjustment step is performed as a separate step in a time zone different from the above-mentioned processing step.
較佳為,在本發明之基板處理方法中,上述溫度調節步驟係與不同於上述處理步驟的步驟或與上述處理步驟並行地執行。 Preferably, in the substrate processing method of the present invention, the above-mentioned temperature adjustment step is performed in parallel with a step different from the above-mentioned processing step or in parallel with the above-mentioned processing step.
較佳為,本發明之基板處理方法係進一步包含有洗淨上述基板的洗淨步驟、及乾燥上述基板的乾燥步驟。較佳為,在上述溫度調節步驟中之上述基板保持部之旋轉數係低於上述洗淨步驟、上述乾燥步驟、或在上述處理步驟中之上述基板保持部之旋轉數。 Preferably, the substrate processing method of the present invention further includes a washing step of washing the substrate, and a drying step of drying the substrate. Preferably, the number of rotations of the substrate holding portion in the temperature adjustment step is lower than the number of rotations of the substrate holding portion in the cleaning step, the drying step, or the processing step.
較佳為,在本發明之基板處理方法中,上述溫度調節步驟係作為上述處理步驟之前一個的步驟而執行。 Preferably, in the substrate processing method of the present invention, the temperature adjustment step is performed as a step preceding the processing step.
較佳為,在本發明之基板處理方法中,於上述溫度調節步驟係與對上述基板保持部供給上述流體並行,對在上述基板之表面與背面中之上述背面供給與上述流體相同之流體或不同之流體。 Preferably, in the substrate processing method of the present invention, in the temperature adjustment step, in parallel with supplying the fluid to the substrate holding portion, the back surface of the substrate surface and the back surface is supplied with the same fluid as the fluid or Different fluids.
較佳為,在本發明之基板處理方法中,上述溫度調節步驟係包含有:測定上述基板保持部之溫度的步驟;及根據上述基板保持部之溫度,對供給至上述基板保持部的上述流體進行控制的步驟。 Preferably, in the substrate processing method of the present invention, the temperature adjustment step includes: a step of measuring the temperature of the substrate holding portion; and, based on the temperature of the substrate holding portion, measuring the fluid supplied to the substrate holding portion Steps to control.
較佳為,在本發明之基板處理方法中,控制上述流體的上述步驟係包含有:判定上述基板保持部之溫度是否高於第1閾值的步驟;及在上述基板保持部之溫度被判定為高於上述第1閾值時,對上述基板保持部供給上述流體,將上述基板保持部冷卻直到上述基板保持部之溫度成為第1既定溫度為止的步驟。較 佳為,上述第1既定溫度係表示上述第1閾值之所示之溫度以下的溫度。 Preferably, in the substrate processing method of the present invention, the step of controlling the fluid includes: determining whether the temperature of the substrate holding portion is higher than a first threshold; and determining whether the temperature of the substrate holding portion is When the value is higher than the first threshold value, the step of supplying the fluid to the substrate holding portion and cooling the substrate holding portion until the temperature of the substrate holding portion reaches the first predetermined temperature. Preferably, the above-mentioned first predetermined temperature indicates a temperature below the temperature indicated by the above-mentioned first threshold value.
較佳為,在本發明之基板處理方法中,控制上述流體的上述步驟係包含有:判定上述基板保持部之溫度是否高於第1閾值的步驟;及判定上述基板保持部之溫度是否高於第2閾值的步驟。較佳為,上述第2閾值之所示之溫度係高於上述第1閾值之所示之溫度。較佳為,控制上述流體的上述步驟係進一步包含有:在判定上述基板保持部之溫度未高於上述第2閾值並且高於上述第1閾值時,將具有第1流量的上述流體供給至上述基板保持部,將上述基板保持部冷卻直到上述基板保持部之溫度成為第1既定溫度為止的步驟;及在判定上述基板保持部之溫度高於上述第2閾值時,將具有第2流量的上述流體供給至上述基板保持部,將上述基板保持部冷卻直到上述基板保持部之溫度成為上述第1既定溫度為止的步驟。較佳為,上述第2流量係多於上述第1流量,上述第1既定溫度係表示上述第1閾值之所示之溫度以下的溫度。 Preferably, in the substrate processing method of the present invention, the step of controlling the fluid includes: determining whether the temperature of the substrate holding portion is higher than a first threshold; and determining whether the temperature of the substrate holding portion is higher than
較佳為,在本發明之基板處理方法中,控制上述流體的上述步驟係包含有:判定上述基板保持部之溫度是否低於第3閾值的步驟;及在判定上述基板保持部之溫度低於上述第3閾值時,對上述基板保持部供給上述流體,將上述基板保持部加熱直到上述基板保持部之溫度成為第2既定溫度為止的步驟。較佳為,上述第2既定溫度係表示上述第3閾值之所示之溫度以上的溫度。 Preferably, in the substrate processing method of the present invention, the step of controlling the fluid includes: determining whether the temperature of the substrate holding portion is lower than a third threshold; and determining whether the temperature of the substrate holding portion is lower than In the case of the third threshold, the step of supplying the fluid to the substrate holding portion and heating the substrate holding portion until the temperature of the substrate holding portion reaches a second predetermined temperature. Preferably, the second predetermined temperature indicates a temperature equal to or higher than the temperature indicated by the third threshold.
較佳為,本發明之基板處理方法中,控制上述流體的上述步驟係包含有:判定上述基板保持部之溫度是否高於第3閾值的步驟;及判定上述基板保持部之溫度是否高於第4閾值的步驟。 較佳為,上述第4閾值之所示之溫度係低於上述第3閾值之所示之溫度。較佳為,控制上述流體的上述步驟係進一步包含有:在判定上述基板保持部之溫度未低於上述第4閾值並且低於上述第3閾值時,將具有第3流量及第1溫度的上述流體供給至上述基板保持部,將上述基板保持部加熱直到上述基板保持部之溫度成為第2既定溫度為止的步驟;及在判定上述基板保持部之溫度低於上述第4閾值時,將具有第4流量及/或第2溫度的上述流體供給至上述基板保持部,將上述基板保持部加熱直到上述基板保持部之溫度成為上述第2既定溫度為止的步驟。較佳為,上述第4流量係多於上述第3流量,上述第2溫度係高於上述第1溫度,上述第2既定溫度係表示上述第3閾值之所示之溫度以上的溫度。 Preferably, in the substrate processing method of the present invention, the step of controlling the fluid includes: determining whether the temperature of the substrate holding portion is higher than a third threshold; and determining whether the temperature of the substrate holding portion is higher than the third threshold. 4 threshold steps. Preferably, the temperature indicated by the fourth threshold is lower than the temperature indicated by the third threshold. Preferably, the step of controlling the fluid further includes: when it is determined that the temperature of the substrate holding portion is not lower than the fourth threshold value and lower than the third threshold value, setting the third flow rate and the first temperature to the The step of supplying fluid to the substrate holding portion and heating the substrate holding portion until the temperature of the substrate holding portion becomes the second predetermined temperature; and when it is determined that the temperature of the substrate holding portion is lower than the fourth threshold value, it will have a A step of supplying the fluid at a flow rate and/or a second temperature to the substrate holding portion, and heating the substrate holding portion until the temperature of the substrate holding portion reaches the second predetermined temperature. Preferably, the fourth flow rate is greater than the third flow rate, the second temperature is higher than the first temperature, and the second predetermined temperature represents a temperature higher than the temperature indicated by the third threshold.
較佳為,在本發明之基板處理方法中,上述第2既定溫度係表示上述基板保持部之溫度為飽和時的飽和溫度。 Preferably, in the substrate processing method of the present invention, the second predetermined temperature indicates a saturation temperature when the temperature of the substrate holding portion is saturated.
較佳為,本發明之基板處理方法中,於測定上述基板保持部之溫度的上述步驟中,使用熱電偶、放射溫度計或紅外線熱成像儀而測定上述基板保持部之溫度。 Preferably, in the substrate processing method of the present invention, in the step of measuring the temperature of the substrate holding portion, the temperature of the substrate holding portion is measured using a thermocouple, a radiation thermometer, or an infrared thermal imager.
較佳為,在本發明之基板處理方法中,在上述溫度調節步驟中,對上述基板保持部供給上述流體,將上述基板保持部冷卻。 Preferably, in the substrate processing method of the present invention, in the temperature adjustment step, the fluid is supplied to the substrate holding portion, and the substrate holding portion is cooled.
較佳為,在本發明之基板處理方法中,在上述溫度調節步驟中,對上述基板保持部供給上述流體,將上述基板保持部加熱。 Preferably, in the substrate processing method of the present invention, in the temperature adjustment step, the fluid is supplied to the substrate holding portion, and the substrate holding portion is heated.
較佳為,在本發明之基板處理方法中,上述流體係包含有惰性氣體、去離子水、或碳酸水。 Preferably, in the substrate processing method of the present invention, the flow system includes an inert gas, deionized water, or carbonated water.
較佳為,在本發明之基板處理方法中,上述處理液係包含有磷酸液、或硫酸過氧化氫水混合液。 Preferably, in the substrate processing method of the present invention, the processing liquid system includes phosphoric acid solution or a sulfuric acid hydrogen peroxide aqueous mixture.
根據本發明其他態樣之基板處理裝置,係藉由處理液而處理基板。基板處理裝置係具備有基板保持部、及溫度調節機構。基板保持部係保持基板而進行旋轉。溫度調節機構係對上述基板保持部供給流體,調節上述基板保持部之溫度。 According to another aspect of the substrate processing apparatus of the present invention, the substrate is processed by the processing liquid. The substrate processing apparatus is provided with a substrate holding part and a temperature adjustment mechanism. The substrate holding portion holds and rotates the substrate. The temperature adjustment mechanism supplies fluid to the substrate holding portion to adjust the temperature of the substrate holding portion.
根據本發明,可抑制複數之基板間處理速度產生變化。 According to the present invention, it is possible to suppress changes in the processing speed between plural substrates.
1、1A‧‧‧處理單元 1. 1A‧‧‧Processing unit
3‧‧‧控制裝置 3‧‧‧Control device
4‧‧‧流體供給調節部 4‧‧‧Fluid supply regulator
5‧‧‧腔室 5‧‧‧Chamber
6‧‧‧流體溫度調節部 6‧‧‧Fluid temperature adjustment part
7‧‧‧旋轉夾具(基板保持部) 7‧‧‧Rotating fixture (substrate holding part)
9‧‧‧旋轉馬達 9‧‧‧Rotating motor
11、15、17‧‧‧噴嘴 11, 15, 17‧‧‧Nozzle
13、19‧‧‧噴嘴移動部 13,19‧‧‧Nozzle moving part
21‧‧‧流體供給單元 21‧‧‧Fluid Supply Unit
22‧‧‧供給路徑 22‧‧‧Supply Path
22a‧‧‧吐出口 22a‧‧‧Exit
23‧‧‧供給路徑 23‧‧‧Supply Path
23a‧‧‧吐出口 23a‧‧‧Exit
24‧‧‧供給路徑 24‧‧‧Supply Path
24a‧‧‧吐出口 24a‧‧‧Exit
25‧‧‧導件 25‧‧‧Guide
26‧‧‧單元移動部 26‧‧‧Unit Movement Department
27‧‧‧溫度測定部 27‧‧‧Temperature Measurement Department
29、29A‧‧‧流體噴嘴(溫度調節機構) 29, 29A‧‧‧Fluid nozzle (temperature adjustment mechanism)
29a‧‧‧吐出口 29a‧‧‧Exit
29b‧‧‧傾斜面 29b‧‧‧inclined surface
30‧‧‧控制部 30‧‧‧Control Department
31‧‧‧記憶部 31‧‧‧Memory Department
40‧‧‧閥 40‧‧‧valve
41‧‧‧流量計 41‧‧‧Flowmeter
42‧‧‧流量調整閥 42‧‧‧Flow control valve
60‧‧‧供給配管 60‧‧‧Supply piping
60a‧‧‧內部空間 60a‧‧‧Internal space
61‧‧‧第1配管 61‧‧‧The first piping
62‧‧‧第2配管 62‧‧‧Second piping
70‧‧‧夾具構件 70‧‧‧Jig component
71‧‧‧旋轉基部 71‧‧‧Rotating base
71a‧‧‧貫通孔 71a‧‧‧Through hole
71b‧‧‧表面 71b‧‧‧surface
71c‧‧‧背面 71c‧‧‧Back
90‧‧‧馬達本體 90‧‧‧Motor body
91‧‧‧軸 91‧‧‧Axis
91a‧‧‧內部空間 91a‧‧‧Internal space
100、100A‧‧‧基板處理裝置 100, 100A‧‧‧Substrate processing equipment
290‧‧‧第1吐出口 290‧‧‧Exit 1
291‧‧‧第2吐出口 291‧‧‧
AX1‧‧‧旋轉軸線 AX1‧‧‧Rotation axis
AX2‧‧‧轉動軸線 AX2‧‧‧axis of rotation
AX3‧‧‧轉動軸線 AX3‧‧‧axis of rotation
FL‧‧‧流體 FL‧‧‧Fluid
P1、P2、P3、P4、P5、P6、P7‧‧‧供給配管 P1, P2, P3, P4, P5, P6, P7‧‧‧Supply piping
V1、V2、V3、V4、V5、V6‧‧‧閥 V1, V2, V3, V4, V5, V6‧‧‧Valve
W‧‧‧基板 W‧‧‧Substrate
Wa‧‧‧表面 Wa‧‧‧surface
Wb‧‧‧背面 Wb‧‧‧Back
圖1為表示本發明實施形態1之基板處理裝置的圖。 Fig. 1 is a diagram showing a substrate processing apparatus according to Embodiment 1 of the present invention.
圖2為表示實施形態1之基板處理裝置之流體噴嘴的剖面圖。 Fig. 2 is a cross-sectional view showing the fluid nozzle of the substrate processing apparatus of the first embodiment.
圖3為表示實施形態1之基板處理裝置所執行之基板處理方法的流程圖。 Fig. 3 is a flowchart showing a substrate processing method executed by the substrate processing apparatus of the first embodiment.
圖4為表示圖3之步驟S2之旋轉夾具溫度調節處理的流程圖。 Fig. 4 is a flowchart showing the temperature adjustment process of the rotating jig in step S2 of Fig. 3.
圖5為表示圖4之步驟S22之流體控制之第1例的流程圖。 Fig. 5 is a flowchart showing a first example of fluid control in step S22 in Fig. 4.
圖6為表示圖4之步驟S22之流體控制之第2例的流程圖。 Fig. 6 is a flowchart showing a second example of fluid control in step S22 in Fig. 4.
圖7為表示圖4之步驟S22之流體控制之第3例的流程圖。 Fig. 7 is a flowchart showing a third example of fluid control in step S22 in Fig. 4.
圖8為表示圖4之步驟S22之流體控制之第4例的流程圖。 Fig. 8 is a flowchart showing a fourth example of fluid control in step S22 in Fig. 4.
圖9為表示本發明實施形態2之基板處理裝置所執行之基板處理方法的流程圖。 Fig. 9 is a flowchart showing a substrate processing method executed by the substrate processing apparatus according to the second embodiment of the present invention.
圖10為表示本發明實施形態3之基板處理裝置之流體噴嘴的側面圖。 Fig. 10 is a side view showing a fluid nozzle of a substrate processing apparatus according to a third embodiment of the present invention.
圖11為表示本發明實施形態4之基板處理裝置的圖。 Fig. 11 is a diagram showing a substrate processing apparatus according to a fourth embodiment of the present invention.
圖12為表示實施形態4之基板處理裝置所執行之基板處理方法的流程圖。 Fig. 12 is a flowchart showing a substrate processing method executed by the substrate processing apparatus of the fourth embodiment.
圖13為表示實施形態5之基板處理裝置所執行之基板處理方法的流程圖。 Fig. 13 is a flowchart showing a substrate processing method executed by the substrate processing apparatus of the fifth embodiment.
圖14為表示本發明之實施例之基板處理裝置及比較例之基板處理裝置的蝕刻速度的圖表。 14 is a graph showing the etching rate of the substrate processing apparatus of the embodiment of the present invention and the substrate processing apparatus of the comparative example.
以下針對本發明之實施形態,參照圖式進行說明。又,對圖式中相同或相當之部分加註相同之元件符號而不重複說明。又,本發明之實施形態中,X軸、Y軸及Z軸係彼此正交,X軸及Y軸係與水平方向平行,Z軸係與鉛直方向平行。 Hereinafter, the embodiments of the present invention will be described with reference to the drawings. In addition, the same or equivalent parts in the drawings are given the same reference numerals without repeating the description. Furthermore, in the embodiment of the present invention, the X-axis, Y-axis, and Z-axis are orthogonal to each other, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.
參照圖1~圖8,說明本發明實施形態1之基板處理裝置100及基板處理方法。首先,參照圖1說明基板處理裝置100。圖1為表示基板處理裝置100的圖。如圖1所示,基板處理裝置100係藉由處理液而處理基板W。具體而言,基板處理裝置100係每次處理1片基板W的單片型。基板W為略圓板狀。 1 to 8, the
基板W為例如半導體基板、液晶顯示裝置用基板、電漿顯示器基板、電場發射顯示器(Field Emission Display:FED)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、或太陽電池用基板。 The substrate W is, for example, a semiconductor substrate, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, Ceramic substrates or substrates for solar cells.
基板處理裝置100係具備有處理單元1、控制裝置3、 閥V1、供給配管P1、閥V2、及供給配管P2。 The
處理單元1係對基板W吐出處理液,對基板W進行處理。具體而言,處理單元1係包含有腔室5、旋轉夾具7、旋轉馬達9、噴嘴11、噴嘴移動部13、噴嘴15、複數之導件25(於實施形態1中為2個導件25)、溫度測定部27、及流體噴嘴29。 The processing unit 1 discharges the processing liquid to the substrate W and processes the substrate W. Specifically, the processing unit 1 includes a
腔室5具有略箱形狀。腔室5係收納有基板W、旋轉夾具7、旋轉馬達9、噴嘴11、噴嘴移動部13、噴嘴15、導件25、溫度測定部27、流體噴嘴29、供給配管P1之一部分及供給配管P2之一部分。 The
旋轉夾具7係保持基板W並進行旋轉。旋轉夾具7為相當於基板保持部之一例。具體而言,旋轉夾具7係於腔室5內一邊水平地保持基板W並一邊使基板W圍繞旋轉軸線AX1進行旋轉。 The
旋轉夾具7係包含有複數之夾具構件70、及旋轉基部71。複數之夾具構件70係設於旋轉基部71。複數之夾具構件70以水平姿勢保持基板W。旋轉基部71係略圓板狀,以水平姿勢支撐複數之夾具構件70。旋轉馬達9係使旋轉基部71圍繞旋轉軸線AX1進行旋轉。因此,旋轉基部71係圍繞旋轉軸線AX1進行旋轉。其結果,被設於旋轉基部71的複數之夾具構件70所保持的基板W係圍繞旋轉軸線AX1進行旋轉。具體而言,旋轉馬達9係包含有馬達本體90、及軸91。軸91係結合於旋轉基部71。而且,馬達本體90係藉由使軸91旋轉,而使旋轉基部71旋轉。軸91為略筒狀。 The
噴嘴11係在基板W旋轉中朝基板W吐出處理液。處理液為藥液。在本說明書中,所謂處理液係指對基板W進行處 理的液體中,直接有助於處理基板W之目的的液體。從而,處理液係與對基板W進行處理之液體中的洗淨液有所區別。 The
例如,在基板處理裝置100對基板W執行蝕刻處理的情況下,處理液係包含有磷酸液。於執行蝕刻處理的情況,基板W為形成有氮化矽膜及氧化矽膜的半導體晶圓。所謂蝕刻處理,係指自半導體晶圓之表面而選擇性地對氮化矽膜進行蝕刻的處理。 For example, when the
例如,在基板處理裝置100對基板W執行光阻去除處理的情況下,處理液係包含有硫酸過氧化氫水混合液(sulfuric acid/hydrogen peroxide mixture:SPM)。在執行光阻去除處理時,基板W係形成有光阻的半導體晶圓。所謂光阻去除處理,係指自半導體晶圓之表面而去除光阻的處理。 For example, when the
包含有磷酸液或SPM的處理液,為在高溫所使用之處理液的一例。例如,磷酸液之溫度為175℃。例如,SPM之溫度為200℃。 A treatment liquid containing phosphoric acid solution or SPM is an example of a treatment liquid used at high temperatures. For example, the temperature of phosphoric acid solution is 175°C. For example, the temperature of SPM is 200°C.
供給配管P1係對噴嘴11供給處理液。閥V1係切換處理液對噴嘴11之供給開始與供給停止。 The supply pipe P1 supplies the processing liquid to the
噴嘴移動部13係圍繞轉動軸線AX2進行轉動,於噴嘴11之處理位置與待機位置之間,使噴嘴11水平地移動。處理位置係表示基板W之上方之位置。待機位置係表示較旋轉夾具7及導件25而更外側的位置。 The
噴嘴15係在基板W之旋轉中朝基板W吐出洗淨液。洗淨液為沖洗液或洗淨藥液。沖洗液為例如去離子水、碳酸水、電解離子水、氫水、臭氧水、及稀釋濃度(例如10ppm~100ppm左右)之鹽酸水之任一種。洗淨藥液為例如鹼性洗淨藥液。鹼性洗淨藥液 為例如氨過氧化氫水混合液(ammonia-hydrogen peroxide mixture:SC1)。 The
供給配管P2係對噴嘴15供給洗淨液。閥V2係切換洗淨液對噴嘴15的供給開始與供給停止。 The supply pipe P2 supplies the cleaning liquid to the
複數之導件25之各者係具有略圓筒形狀。複數之導件25之各者係承接自基板W所排出的處理液或洗淨液。 Each of the plural guides 25 has a substantially cylindrical shape. Each of the plurality of
溫度測定部27係測定旋轉夾具7之溫度。然後,溫度測定部27係將表示旋轉夾具7之溫度的資訊輸出至控制裝置3。具體而言,溫度測定部27係測定旋轉基部71之溫度。然後,溫度測定部27將表示旋轉基部71之溫度的資訊輸出至控制裝置3。 The
例如,溫度測定部27係包含有溫度感應器。溫度感應器例如包含有熱電偶及計測器。具體而言,熱電偶接觸至旋轉基部71。然後,熱電偶係檢測出旋轉基部71之溫度,將對應於溫度的電壓信號輸出至計測器。計測器係將電壓訊號轉換為溫度,將表示溫度的資訊輸出至控制裝置3。 For example, the
例如,溫度測定部27係包含有放射溫度計。放射溫度計係測定由旋轉基部71所放射出的紅外線或可見光線之強度,測定旋轉基部71之溫度。然後,放射溫度計係將表示旋轉基部71之溫度的資訊輸出至控制裝置3。 For example, the
例如,溫度測定部27係包含有紅外線熱成像儀。紅外線熱成像儀係包含有紅外線攝影機。紅外線熱成像儀係藉由紅外線攝影機而檢測出自旋轉基部71所放射出的紅外線。進而,紅外線熱成像儀係分析表示所檢測出之紅外線的影像,算出旋轉基部71之溫度。然後,紅外線熱成像儀係將表示旋轉基部71之溫度的資 訊輸出至控制裝置3。 For example, the
控制裝置3係包含有控制部30、及記憶部31。控制部30係包含有如CPU(Central Processing Unit)般之處理器。記憶部31係包含有記憶裝置,記憶資料及電腦程式。具體而言,記憶部31係包含有:半導體記憶體般的主記憶裝置;及半導體記憶體及/或硬碟驅動裝置般的輔助記憶裝置。記憶部31亦可包含有可移動式媒體。控制部30之處理器係執行記憶部31之記憶裝置所記憶的電腦程式,控制處理單元1、閥V1及閥V2。 The
接著,參照圖1及圖2詳細說明流體噴嘴29。圖2為表示流體噴嘴29之剖面圖。如圖1及圖2所示,流體噴嘴29係配置於旋轉軸線AX1上。流體噴嘴29係相當於「溫度調節機構」之一例。亦即,流體噴嘴29係將流體(以下記載為「流體FL」)供給至旋轉夾具7,調節旋轉夾具7之溫度。 Next, the
從而,根據實施形態1,例如可藉由流體FL將旋轉夾具7冷卻。其結果,可抑制因處理液之熱放射(熱輻射)的影響而旋轉夾具7溫度上升的情形。故可將藉由處理液所進行之處理時的旋轉夾具7之溫度保持為略一定溫度TcA。從而,可抑制複數之基板W間處理速率產生變化的情形。一定溫度TcA為例如室溫Trm。室溫Trm係例如處理單元1所設置之室內的溫度。 Therefore, according to the first embodiment, for example, the
又,根據實施形態1,例如可藉由流體FL而加熱旋轉夾具7。從而,可將藉由處理液所進行之處理時的旋轉夾具7之溫度保持為略一定溫度TcB。其結果,可抑制在複數之基板W間處理速率產生變化的情形。又,一定溫度TcB係表示較室溫Trm高的溫度。 Furthermore, according to Embodiment 1, for example, the
若可抑制於複數之基板W間處理速率產生變化的情形,則具有例如下述優點。亦即,在連續地對每次1片基板W進行處理時,可抑制在複數之基板W間處理結果之偏差。又,例如在對基板W執行蝕刻處理時,不需要顧慮到蝕刻速率變化之多餘的氮化矽膜之生成時間,可提升基板W生產量。進而,由於藉由處理液所造成之氮化矽膜之削除量成為一定,故可於複數之基板W間抑制蝕刻結果之偏差。再者,在對基板W執行光阻去除處理時,可於複數之基板W間抑制光阻去除結果之偏差。 If it is possible to suppress a change in the processing rate between a plurality of substrates W, there are, for example, the following advantages. That is, when one substrate W is continuously processed at a time, it is possible to suppress the deviation of the processing results among the plurality of substrates W. In addition, for example, when performing an etching process on the substrate W, there is no need to worry about the excess silicon nitride film generation time due to the change in the etching rate, and the throughput of the substrate W can be increased. Furthermore, since the removal amount of the silicon nitride film by the processing liquid becomes constant, the deviation of the etching result among the plurality of substrates W can be suppressed. Furthermore, when the photoresist removal process is performed on the substrate W, the deviation of the photoresist removal result among the plurality of substrates W can be suppressed.
於此,所謂處理速率係指藉由處理液而處理基板W時每單位時間之基板W之處理量。例如,在藉由處理液而對基板W執行蝕刻處理時之處理速率係表示蝕刻速率。蝕刻速率係表示每單位時間之基板W之蝕刻量。例如,在藉由處理液而對基板W執行光阻去除處理時之處理速率係表示光阻去除速率。光阻去除速率係表示每單位時間之光阻去除量。 Here, the so-called processing rate refers to the processing amount of the substrate W per unit time when the substrate W is processed by the processing liquid. For example, the processing rate when the etching processing is performed on the substrate W with the processing liquid represents the etching rate. The etching rate represents the etching amount of the substrate W per unit time. For example, the processing rate when the photoresist removal process is performed on the substrate W by the processing liquid means the photoresist removal rate. The photoresist removal rate means the amount of photoresist removal per unit time.
又,將流體FL供給至旋轉夾具7而調節旋轉夾具7之溫度,係在使用高溫之處理液(例如,含有磷酸液的處理液或含有SPM的處理液)的情況下特別有效。此係由於處理液為越高溫,則因處理液之熱放射而熱越蓄積於旋轉夾具7所致。亦即,根據實施形態1,即使在使用高溫處理液的情況下,根據藉由流體FL所進行之冷卻,可抑制旋轉夾具7之溫度上升,或根據藉由流體FL所進行之加熱,可將藉由處理液所進行之處理時之旋轉夾具7之溫度保持為略一定溫度TcB。其結果,即使在使用高溫之處理液的情況下,仍可於複數基板W間抑制處理速率產生變化的情形。 In addition, supplying the fluid FL to the
又,實施形態1中,用於調節旋轉夾具7之溫度的流 體FL為液體或氣體。特佳為流體FL係包含有惰性氣體、去離子水、或碳酸水。此係由於即使在流體FL接觸至基板W的情況下,惰性氣體、去離子水、及碳酸水亦幾乎不對基板W造成影響所致。又,流體FL亦可為與洗淨液(沖洗液或洗淨藥液)相同的液體。 In addition, in the first embodiment, the fluid FL used to adjust the temperature of the
再者,實施形態1中,具體而言,流體噴嘴29係對旋轉基部71供給流體,調節旋轉基部71之溫度。從而,根據藉由流體FL所進行之冷卻,可抑制旋轉基部71之溫度上升,可將旋轉基部71之溫度保持為略一定溫度TcA;又,根據藉由流體FL所進行之加熱,可將藉由處理液所進行之處理時的旋轉基部71之溫度保持為略一定溫度TcB。其結果,相較於僅對夾具構件70供給流體FL的情況,可更加抑制在複數之基板W間處理速率產生變化的情形。此係由於旋轉基部71之熱容量大於夾具構件70,旋轉基部71之蓄熱對處理速率所造成的影響大於夾具構件70之蓄熱對處理速率所造成的影響所致。尚且,流體噴嘴29亦可對旋轉基部71與夾具構件70之雙方供給流體FL。 Furthermore, in Embodiment 1, specifically, the
接著參照圖2,詳細地說明流體噴嘴29。如圖2所示,流體噴嘴29係通過旋轉馬達9之軸91之內部空間91a及旋轉基部71之貫通孔71a,於旋轉基部71之表面71b與背面71c中,自表面71b突出。流體噴嘴29係與基板W之表面Wa與背面Wb中的背面Wb相對向。流體噴嘴29係相對於基板W,於旋轉軸線AX1之延伸方向上隔著既定間隔而進行配置。流體噴嘴29係與旋轉基部71及軸91之旋轉無關而呈靜止。 Next, referring to Fig. 2, the
流體噴嘴29係自吐出口29a吐出流體FL,對旋轉基部71之表面71b供給流體FL。然後,流體FL係擴展於旋轉基部 71之表面71b。尤其是流體FL係藉由根據旋轉基部71之旋轉的離心力,而擴展至旋轉基部71之表面71b之全體。吐出口29a係朝上方向開口。又,流體FL之一部分係沿著流體噴嘴29之傾斜面29b流動,而供給至旋轉基部71之表面71b。 The
接著參照圖2,說明對流體噴嘴29之流體的供給。如圖2所示,基板處理裝置100係進一步具備有流體供給調節部4、流體溫度調節部6、及供給配管P7。供給配管P7係將流體FL供給至流體噴嘴29。 Next, referring to Fig. 2, the supply of fluid to the
流體供給調節部4係調節流體FL對流體噴嘴29的供給量。具體而言,流體供給調節部4係包含有閥40、流量計41、及流量調整閥42。閥40係切換流體FL對流體噴嘴29之供給開始與供給停止。流量計41係檢測出供給至流體噴嘴29的流體FL之流量。流量調整閥42係調整供給至流體噴嘴29的流體FL之流量。處理液係以對應於流量調整閥42之開度的流量,自供給配管P7供給至流體噴嘴29。開度係表示流量調整閥42所開放的程度。流體溫度調節部6係調節流體FL之溫度。流體溫度調節部6係例如包含有加熱器。流體溫度調節部6係例如在藉由流體FL加熱旋轉夾具7時,對流體FL進行加熱而使流體FL成為特定溫度。又,在藉由流體FL冷卻旋轉夾具7的情況,亦可不設置流體溫度調節部6。 The fluid
接著,參照圖1~圖3,說明實施形態1之基板處理方法。圖3為表示基板處理方法之流程圖。如圖3所示,基板處理方法係包含有步驟S1~步驟S6。基板處理方法係對每1片基板W藉由基板處理裝置100而執行。 Next, referring to FIGS. 1 to 3, the substrate processing method of Embodiment 1 will be described. Fig. 3 is a flowchart showing a substrate processing method. As shown in FIG. 3, the substrate processing method includes steps S1 to S6. The substrate processing method is executed by the
如圖1~圖3所示,在步驟S1中,旋轉夾具7保持基 板W。 As shown in Figs. 1 to 3, the
接著,於步驟S2,控制部30係控制流體供給調節部4,而流體噴嘴29對旋轉夾具7供給流體FL。其結果,流體噴嘴29係對旋轉夾具7供給流體FL,調節旋轉夾具7之溫度。具體而言,於步驟S2,流體噴嘴29係對旋轉夾具7供給流體FL,冷卻旋轉夾具7。或者,於步驟S2,流體噴嘴29係對旋轉夾具7供給流體FL,加熱旋轉夾具7。步驟S2係相當於「溫度調節步驟」之一例。 Next, in step S2, the
接著,於步驟S3,噴嘴11係對基板W之表面Wa吐出處理液,藉由處理液而處理基板W。步驟S3係相當於「處理步驟」之一例。 Next, in step S3, the
接著,於步驟S4,噴嘴15係將洗淨液吐出至基板W之表面Wa,洗淨基板W。步驟S3係相當於「洗淨步驟」之一例。 Next, in step S4, the
接著,於步驟S5,旋轉夾具7係藉由進行旋轉而乾燥基板W。尚且,在步驟S5中,亦可對基板W之表面Wa吐出用於使基板W乾燥的溶劑(以下記載為「乾燥用溶劑」)。乾燥用溶劑例如為含有表面張力較去離子水低之異丙醇(isopropyl alcohol:IPA)等之有機溶劑成分的液體(低表面張力溶劑)。步驟S5係相當於「乾燥步驟」之一例。 Next, in step S5, the
接著,於步驟S6,搬送機器人係自旋轉夾具7取出基板W。 Next, in step S6, the transfer robot system takes out the substrate W from the
以上,如參照圖1~圖3所說明般,根據實施形態1,於步驟S2(溫度調節步驟)係藉由流體FL冷卻旋轉夾具7。從而,可抑制因處理液之熱放射的影響而旋轉夾具7溫度上升的情形,可將藉由處理液所進行之處理時之旋轉夾具7的溫度保持為略一定溫度 TcA。或,於步驟S2,藉由流體FL加熱旋轉夾具7。從而,可將藉由處理液所進行之處理時之旋轉夾具7的溫度保持為略一定溫度TcB。以上,藉由步驟S2,可抑制在複數之基板W間處理速率產生變化的情形。 As described above with reference to FIGS. 1 to 3, according to Embodiment 1, in step S2 (temperature adjustment step), the
實施形態1中,具體而言,於步驟S2,流體噴嘴29係對旋轉夾具7直接供給流體FL,調節旋轉夾具7之溫度。更具體而言,步驟S2中,流體噴嘴29係對旋轉基部71(具體而言為旋轉基部71之表面71b)直接供給流體FL,調節旋轉基部71之溫度。 In Embodiment 1, specifically, in step S2, the
又,根據實施形態1,步驟S2(溫度調節步驟)係於步驟S1與步驟S3之間執行。又,亦可於步驟S1之前、於步驟S3與步驟S4之間、於步驟S4與步驟S5之間、於步驟S5與步驟S6之間、或於步驟S6之後,執行步驟S2。亦即,步驟S2係於與步驟S3相異之時間帶作為單獨步驟而執行。從而,可抑制例如流體FL與處理液混合、流體FL與洗淨液混合、流體FL與乾燥用溶劑混合等情形。其結果,成為容易地進行流體FL、處理液、洗淨液及乾燥用溶劑之各者的回收。 Furthermore, according to Embodiment 1, step S2 (temperature adjustment step) is executed between step S1 and step S3. Also, step S2 may be executed before step S1, between step S3 and step S4, between step S4 and step S5, between step S5 and step S6, or after step S6. That is, step S2 is executed as a separate step in a time zone different from step S3. Therefore, it is possible to suppress the mixing of the fluid FL with the treatment liquid, the mixing of the fluid FL with the cleaning liquid, and the mixing of the fluid FL with the drying solvent. As a result, it becomes easy to recover each of the fluid FL, the processing liquid, the cleaning liquid, and the drying solvent.
再者,根據實施形態1,步驟S2(溫度調節步驟)係作為步驟S3(處理步驟)之前一個步驟而執行。從而,在藉由流體FL而加熱旋轉夾具7時,可在步驟S3中即使藉由處理液所進行之基板W之處理前,對各基板W而將旋轉夾具7之溫度保持於略一定溫度TcB。其結果,可進一步抑制在複數之基板W間處理速率產生變化的情形。 Furthermore, according to Embodiment 1, step S2 (temperature adjustment step) is executed as a step before step S3 (processing step). Therefore, when the
於此,較佳為,在步驟S2(溫度調節步驟)中的旋轉夾具7之旋轉數,係較步驟S3、步驟S4、或步驟S5中的旋轉夾具7 之旋轉數為低。此係由於於步驟S2中之旋轉夾具7之旋轉數越低,則流體FL越容易滯留於旋轉基部71之表面71b,可對旋轉基部71藉由流體FL有效地進行冷卻或加熱所致。尚且,旋轉夾具7之旋轉數係表示每單位時間之旋轉夾具7之旋轉數(rpm)。 Here, it is preferable that the number of rotations of the
具體而言,較佳為,步驟S2之旋轉夾具7之旋轉數N1(例如10rpm),係較在步驟S5中之旋轉夾具7之旋轉數N5(例如1500rpm)為低,更佳為,較在步驟S4中之旋轉夾具7之旋轉數N4(例如1000rpm)為低,再更佳係較在步驟S3中之旋轉夾具7之旋轉數N3(例如200rpm)為低。 Specifically, it is preferable that the number of rotations N1 (for example, 10 rpm) of the
又,較佳為,於步驟S2(溫度調節步驟),流體噴嘴29係以不對基板W之溫度造成影響之程度的流量,對旋轉夾具7供給流體FL。例如,於步驟S2,藉由流體噴嘴29,使流體FL不直接接觸至基板W而將流體FL供給至旋轉夾具7。 Furthermore, it is preferable that in step S2 (temperature adjustment step), the
接著,參照圖1~圖4,詳細說明圖3之步驟S2。圖4為表示圖3之步驟S2之旋轉夾具溫度調節處理的流程圖。如圖4所示,旋轉夾具溫度調節處理係包含有步驟S21及步驟S22。 Next, referring to FIGS. 1 to 4, step S2 of FIG. 3 will be described in detail. Fig. 4 is a flowchart showing the temperature adjustment process of the rotating jig in step S2 of Fig. 3. As shown in FIG. 4, the rotating jig temperature adjustment process includes step S21 and step S22.
如圖1、圖2及圖4所示,於步驟S21,溫度測定部27係測定旋轉夾具7(具體而言為旋轉基部71)之溫度Tsp。控制部30係自溫度測定部27以既定時間隔接收表示旋轉夾具7之溫度Tsp的資訊。 As shown in FIGS. 1, 2 and 4, in step S21, the
於步驟S22,控制部30係根據旋轉夾具7之溫度Tsp,控制供給至旋轉夾具7的流體FL。從而,根據實施形態1,可監視旋轉夾具7之溫度,配合旋轉夾具7之溫度而確實地控制流體FL。步驟S22係相當於「控制流體FL之步驟」之一例。 In step S22, the
具體而言,步驟S22中,控制部30係根據旋轉夾具7之溫度Tsp控制流體供給調節部4及/或流體溫度調節部6,控制自流體噴嘴29對旋轉夾具7所供給的流體FL。從而,流體噴嘴29係在根據溫度Tsp之控制之下,對旋轉夾具7供給流體FL。藉由完成步驟S22,而完成旋轉夾具溫度調節處理。然後,處理係回至圖3之主程序,前進至步驟S3。 Specifically, in step S22, the
尚且,於步驟S21,可使用熱電偶、放射溫度計、或紅外線熱成像儀,測定旋轉夾具7之溫度。於使用熱電偶的情況下,由於可以高精度測定旋轉夾具7之溫度Tsp,故可更確實地控制流體FL。在使用放射溫度計的情況下,可簡易地測定旋轉夾具7之溫度Tsp。於使用紅外線熱成像儀的情況下,由於可測定旋轉夾具7之溫度分佈,故可配合旋轉夾具7之溫度分佈而控制流體FL。藉由紅外線熱成像儀而所測定的旋轉夾具7之溫度分佈,係表示旋轉夾具7之蓄熱狀況。 Furthermore, in step S21, a thermocouple, radiation thermometer, or infrared thermal imager can be used to measure the temperature of the
接著,參照圖1、圖2、圖4及圖5,說明圖4之步驟S22之一例。圖5為表示圖4之步驟S22之流體控制之第1例的流程圖。如圖5所示,第1例之流體控制係包含有步驟S31~步驟S34。 Next, referring to FIG. 1, FIG. 2, FIG. 4, and FIG. 5, an example of step S22 in FIG. 4 will be described. Fig. 5 is a flowchart showing a first example of fluid control in step S22 in Fig. 4. As shown in FIG. 5, the fluid control system of the first example includes steps S31 to S34.
如圖1、圖2及圖5所示般,在步驟S31中,控制部30係判定旋轉夾具7之溫度Tsp是否高於第1閾值TH1。 As shown in FIGS. 1, 2 and 5, in step S31, the
若於步驟S31判定為否定(No),處理係回至圖4之副程序,進而回至圖3之主程序,前進至步驟S3。 If the determination in step S31 is negative (No), the processing returns to the subroutine of FIG. 4, then returns to the main routine of FIG. 3, and proceeds to step S3.
另一方面,若於步驟S31判定為肯定(Yes),處理則前進至步驟S32。 On the other hand, if the determination in step S31 is affirmative (Yes), the process proceeds to step S32.
於步驟S32中,以流體噴嘴29對旋轉夾具7供給流體FL而冷卻旋轉夾具7之方式,控制部30控制流體供給調節部4。 In step S32, the
於步驟S33中,控制部30係判定旋轉夾具7之溫度Tsp是否成為第1既定溫度T1。第1既定溫度T1係表示第1閾值TH1之所示之溫度以下的溫度。第1既定溫度T1為例如室溫Trm。 In step S33, the
若於步驟S33中判定為否定(No),則處理回至步驟S32。 If it is determined as negative (No) in step S33, the process returns to step S32.
另一方面,若於步驟S33中判定為肯定(Yes),則處理前進至步驟S34。 On the other hand, if it is determined as affirmative (Yes) in step S33, the process proceeds to step S34.
於步驟S34中,以停止流體噴嘴29對旋轉夾具7的流體FL之供給之方式,控制部30控制流體供給調節部4。藉由完成步驟S34,而完成根據旋轉夾具7之溫度Tsp的流體控制。然後,處理係回至圖4之副程序,進而回至圖3之主程序,前進至步驟S3。 In step S34, the
以上,如參照圖5所說明般,根據實施形態1,在判定旋轉夾具7之溫度Tsp高於第1閾值TH1時(於步驟S31中為Yes),流體噴嘴29係對旋轉夾具7供給流體FL,冷卻旋轉夾具7直到旋轉夾具7之溫度成為第1既定溫度T1為止。從而,在連續地對每次1片基板W進行處理時,可更加抑制旋轉夾具7之溫度上升。其結果,可更加抑制在複數之基板W間處理速率產生變化的情形。 As described above with reference to FIG. 5, according to the first embodiment, when it is determined that the temperature Tsp of the
接著,參照圖1、圖2、圖4及圖6,說明圖4之步驟S22之一例。圖6為表示圖4之步驟S22之流體控制之第2例的流程圖。如圖6所示,第2例之流體控制係包含有步驟S41~步驟S47。 Next, referring to FIG. 1, FIG. 2, FIG. 4, and FIG. 6, an example of step S22 in FIG. 4 will be described. Fig. 6 is a flowchart showing a second example of fluid control in step S22 in Fig. 4. As shown in Fig. 6, the fluid control system of the second example includes steps S41 to S47.
如圖1、圖2及圖6所示,在步驟S41中,控制部30係判定旋轉夾具7之溫度Tsp是否高於第2閾值TH2。第2閾值TH2之所示之溫度係較步驟S44之第1閾值TH1之所示之溫度為高。 As shown in FIGS. 1, 2 and 6, in step S41, the
若於步驟S41判定為肯定(Yes),則處理係前進至步驟S42。 If the determination in step S41 is affirmative (Yes), the process proceeds to step S42.
另一方面,若於步驟S41判定為否定(No),處理則前進至步驟S44。 On the other hand, if the determination in step S41 is negative (No), the process proceeds to step S44.
於步驟S44中,控制部30係判定旋轉夾具7之溫度Tsp是否高於第1閾值TH1。 In step S44, the
若於步驟S44中判定為否定(No),則處理回至圖4之副程序,進而回至圖3之主程序,前進至步驟S3。 If the determination in step S44 is negative (No), the processing returns to the subroutine of FIG. 4, and then returns to the main routine of FIG. 3, and proceeds to step S3.
另一方面,若於步驟S44中判定為肯定(Yes),則處理係前進至步驟S45。 On the other hand, if the determination in step S44 is affirmative (Yes), the processing proceeds to step S45.
於步驟S45中,以流體噴嘴29對旋轉夾具7供給具有第1流量FW1的流體FL而冷卻旋轉夾具7之方式,控制部30控制流體供給調節部4。 In step S45, the
於步驟S46中,控制部30係判定旋轉夾具7之溫度Tsp是否成為第1既定溫度T1。第1既定溫度T1係表示第1閾值TH1之所示之溫度以下的溫度。第1既定溫度T1為例如室溫Trm。 In step S46, the
若於步驟S46中判定為否定(No),則處理係回至步驟S45。 If the determination in step S46 is negative (No), the process returns to step S45.
另一方面,若於步驟S46中判定為肯定(Yes),則處理係前進至步驟S47。 On the other hand, if it is determined in the affirmative (Yes) in step S46, the processing proceeds to step S47.
於步驟S41之肯定判定後,於步驟S42中,以流體噴 嘴29將具有第2流量FW2的流體FL供給至旋轉夾具7而冷卻旋轉夾具7之方式,控制部30控制流體供給調節部4。第2流量FW2係大於第1流量FW1。 After the affirmative determination in step S41, in step S42, the
於步驟S43中,控制部30係判定旋轉夾具7之溫度Tsp是否成為第1既定溫度T1。 In step S43, the
若於步驟S43中判定為否定(No),則處理係回至步驟S42。 If it is determined as negative (No) in step S43, the process returns to step S42.
另一方面,若於步驟S43中判定為肯定(Yes),則處理係前進至步驟S47。 On the other hand, if it is determined as affirmative (Yes) in step S43, the processing proceeds to step S47.
於步驟S43或步驟S46之肯定判定後,於步驟S47中,以停止流體噴嘴29對旋轉夾具7的流體之供給之方式,控制部30控制流體供給調節部4。藉由完成步驟S47,而完成根據旋轉夾具7之溫度Tsp的流體控制。然後,處理係回至圖4之副程序,進而回至圖3之主程序,前進至步驟S3。 After the affirmative determination in step S43 or step S46, in step S47, the
以上,如參照圖6所說明般,根據實施形態1,在判定旋轉夾具7之溫度Tsp未高於第2閾值TH2(在步驟S41中為No)並且判定高於第1閾值TH1時(於步驟S44中為Yes),流體噴嘴29係對旋轉夾具7供給具有第1流量FW1的流體FL,冷卻旋轉夾具7直到旋轉夾具7之溫度Tsp成為第1既定溫度T1為止。從而,與參照圖5而所說明之第1例的流體控制同樣,在連續地對每次1片基板W進行處理時,可更加抑制旋轉夾具7之溫度上升。 As described above, as described with reference to FIG. 6, according to Embodiment 1, when it is determined that the temperature Tsp of the
又,根據實施形態1,在判定旋轉夾具7之溫度Tsp高於第2閾值TH2(在步驟S41中為Yes)時,流體噴嘴29係對旋轉夾具7供給具有第2流量FW2的流體FL,冷卻旋轉夾具7直到旋 轉夾具7之溫度Tsp成為第1既定溫度T1為止。從而,即使在旋轉夾具7之溫度Tsp上升較多的情況下,藉由對旋轉夾具7供給較第1流量FW1為多之第2流量FW2的流體FL,可抑制使旋轉夾具7之溫度Tsp成為第1既定溫度T1為止之時間變長。 Furthermore, according to the first embodiment, when it is determined that the temperature Tsp of the
接著,參照圖1、圖2、圖4及圖7,說明圖4之步驟S22之另外其他例。圖7為表示圖4之步驟S22之流體控制之第3例的流程圖。如圖7所示,第3例之流體控制係包含有步驟S51~步驟S54。 Next, referring to FIG. 1, FIG. 2, FIG. 4, and FIG. 7, still another example of step S22 in FIG. 4 will be described. Fig. 7 is a flowchart showing a third example of fluid control in step S22 in Fig. 4. As shown in FIG. 7, the fluid control system of the third example includes steps S51 to S54.
如圖1、圖2及圖7所示般,在步驟S51中,控制部30係判定旋轉夾具7之溫度Tsp是否低於第3閾值TH3。 As shown in FIG. 1, FIG. 2 and FIG. 7, in step S51, the
若於步驟S51判定為否定(No),處理係回至圖4之副程序,進而回至圖3之主程序,前進至步驟S3。 If the determination in step S51 is negative (No), the processing returns to the subroutine of FIG. 4, then returns to the main routine of FIG. 3, and proceeds to step S3.
另一方面,若於步驟S51判定為肯定(Yes),處理則前進至步驟S52。 On the other hand, if the determination in step S51 is affirmative (Yes), the process proceeds to step S52.
於步驟S52中,以流體噴嘴29對旋轉夾具7供給流體而加熱旋轉夾具7之方式,控制部30控制流體供給調節部4。尚且,流體FL之溫度係藉由流體供給調節部4而維持為第1溫度Tft。第1溫度Tft係表示第2既定溫度T2以上之溫度。 In step S52, the
於步驟S53中,控制部30係判定旋轉夾具7之溫度Tsp是否成為第2既定溫度T2。第2既定溫度T2係表示第3閾值TH3之所示之溫度以上的溫度。又,第2既定溫度T2係表示較室溫Trm為高的溫度。 In step S53, the
若於步驟S53中判定為否定(No),則處理係回至步驟S52。 If it is determined as negative (No) in step S53, the process returns to step S52.
另一方面,若於步驟S53中判定為肯定(Yes),則處理係前進至步驟S54。 On the other hand, if the determination in step S53 is affirmative (Yes), the processing proceeds to step S54.
於步驟S54中,以停止流體噴嘴29對旋轉夾具7的流體之供給之方式,控制部30控制流體供給調節部4。藉由完成步驟S54,而完成根據旋轉夾具7之溫度Tsp的流體控制。然後,處理係回至圖4之副程序,進而回至圖3之主程序,前進至步驟S3。 In step S54, the
以上,如參照圖7所說明般,根據實施形態1,在判定旋轉夾具7之溫度Tsp低於第3閾值TH3時(於步驟S51中為Yes),流體噴嘴29係對旋轉夾具7供給流體FL,加熱旋轉夾具7直到旋轉夾具7之溫度Tsp成為第2既定溫度T2為止。從而,在連續地對每次1片基板W進行處理時,可將藉由處理液所進行之處理時的旋轉夾具7之溫度Tsp保持為略一定溫度TcB。其結果,可抑制在複數之基板W間處理速率產生變化的情形。尚且,於實施形態1中,由於即將執行步驟S3之前執行步驟S2(圖3),故一定溫度TcB係略相等於第2既定溫度T2。 As described above, as described with reference to FIG. 7, according to the first embodiment, when it is determined that the temperature Tsp of the
於此,較佳為,第2既定溫度T2係表示旋轉夾具7(具體而言為旋轉基部71)之溫度Tsp飽和時的飽和溫度Tst。此係由於旋轉夾具7之溫度Tsp超過飽和溫度Tst而變更高的可能性低,故超過飽和溫度Tst而加熱流體FL係使流體溫度調節部6之電力消耗成為浪費。亦即,藉由將第2既定溫度T2設定為旋轉夾具7之飽和溫度Tst,可抑制流體溫度調節部6之消耗電力。尚且,第2既定溫度T2亦可為超過飽和溫度Tst的溫度。 Here, it is preferable that the second predetermined temperature T2 represents the saturation temperature Tst when the temperature Tsp of the rotating jig 7 (specifically, the rotating base 71) is saturated. This is because the temperature Tsp of the
又,在不對旋轉夾具7供給流體FL的情況下,旋轉夾具7之溫度Tsp係因處理液之熱放射之影響,而每處理1片之基 板W即漸漸地上升。然後,當超過在實驗中所要求之處理片數時,旋轉夾具7之溫度Tsp係成為一定而飽和。溫度Tsp成為一定而飽和時之溫度為飽和溫度Tst。 Furthermore, when the fluid FL is not supplied to the
接著,參照圖1、圖2、圖4及圖8,說明圖4之步驟S22之另外其他例。圖8為表示圖4之步驟S22之流體控制之第4例的流程圖。如圖8所示般,第4例之流體控制係包含有步驟S61~步驟S67。 Next, another example of step S22 in FIG. 4 will be described with reference to FIG. 1, FIG. 2, FIG. 4, and FIG. 8. Fig. 8 is a flowchart showing a fourth example of fluid control in step S22 in Fig. 4. As shown in FIG. 8, the fluid control system of the fourth example includes steps S61 to S67.
如圖1、圖2及圖8所示般,在步驟S61中,控制部30係判定旋轉夾具7之溫度Tsp是否低於第4閾值TH4。第4閾值TH4之所示之溫度係低於步驟S64之第3閾值TH3之所示之溫度。 As shown in FIG. 1, FIG. 2 and FIG. 8, in step S61, the
若於步驟S61判定為肯定(Yes),處理係前進至步驟S62。 If the determination in step S61 is affirmative (Yes), the process proceeds to step S62.
另一方面,若於步驟S61判定為否定(No),處理則前進至步驟S64。 On the other hand, if the determination in step S61 is negative (No), the process proceeds to step S64.
於步驟S64中,控制部30係判定旋轉夾具7之溫度Tsp是否低於第3閾值TH3。 In step S64, the
若於步驟S64判定為否定(No),處理係回至圖4之副程序、進而回至圖3之主程序,前進至步驟S3。 If the determination in step S64 is negative (No), the processing returns to the subroutine of FIG. 4, and then to the main routine of FIG. 3, and proceeds to step S3.
另一方面,若於步驟S64判定為肯定(Yes),則處理係前進至步驟S65。 On the other hand, if the determination in step S64 is affirmative (Yes), the processing proceeds to step S65.
於步驟S65中,以流體噴嘴29對旋轉夾具7供給具有第3流量FW3及第1溫度Tft的流體FL而加熱旋轉夾具7之方式,控制部30控制流體供給調節部4及流體溫度調節部6。 In step S65, the
於步驟S66中,控制部30係判定旋轉夾具7之溫度 Tsp是否成為第2既定溫度T2。第2既定溫度T2係表示第3閾值TH3之所示之溫度以上的溫度。 In step S66, the
若於步驟S66中判定為否定(No),則處理係回至步驟S65。 If it is determined as negative (No) in step S66, the process returns to step S65.
另一方面,若於步驟S66中判定為肯定(Yes),則處理係前進至步驟S67。 On the other hand, if it is determined as affirmative (Yes) in step S66, the process proceeds to step S67.
於步驟S61中之判定為肯定之後,於步驟S62中,以流體噴嘴29將具有第4流量FW4及/或第2溫度Tsc的流體FL供給至旋轉夾具7而加熱旋轉夾具7之方式,控制部30控制流體供給調節部4及流體溫度調節部6。第4流量FW4係多於第3流量FW3。又,第2溫度Tsc係高於第1溫度Tft。 After the determination in step S61 is affirmative, in step S62, the
於步驟S63中,控制部30係判定旋轉夾具7之溫度Tsp是否成為第2既定溫度T2。 In step S63, the
若於步驟S63中判定為否定(No),則處理係回至步驟S62。 If it is determined as negative (No) in step S63, the process returns to step S62.
另一方面,若於步驟S63中判定為肯定(Yes),則處理係前進至步驟S67。 On the other hand, if the determination in step S63 is affirmative (Yes), the processing proceeds to step S67.
於步驟S63或步驟S66中之判定為肯定之後,於步驟S67,以停止流體噴嘴29對旋轉夾具7的流體之供給的方式,控制部30控制流體供給調節部4。藉由完成步驟S67,而完成根據旋轉夾具7之溫度Tsp的流體控制。然後,處理係回至圖4之副程序,進而回至圖3之主程序,前進至步驟S3。 After the determination in step S63 or step S66 is affirmative, in step S67, the
以上,如參照圖8所說明般,根據實施形態1,在判定旋轉夾具7之溫度Tsp未低於第4閾值TH4時(於步驟S61中為 No)並且低於第3閾值TH3時(步驟S64中為Yes),對旋轉夾具7供給具有第3流量FW3及第1溫度Tft的流體FL,加熱旋轉夾具7直到旋轉夾具7之溫度Tsp成為第2既定溫度T2為止。從而,與參照圖7所說明之第3例之流體控制同樣,在連續地對每次1片基板W進行處理時,可將藉由處理液所進行之處理時的旋轉夾具7之溫度Tsp保持為略一定溫度TcB。 As described above, as described with reference to FIG. 8, according to the first embodiment, when it is determined that the temperature Tsp of the
又,根據實施形態1,在判定旋轉夾具7之溫度Tsp低於第4閾值TH4(步驟S61中為Yes)時,對旋轉夾具7供給具有第4流量FW4及/或第2溫度Tsc的流體FL,加熱旋轉夾具7直到旋轉夾具7之溫度Tsp成為第2既定溫度T2為止。從而,即使在旋轉夾具7之溫度Tsp較低的情況下,藉由對旋轉夾具7供給較第3流量FW3為多之第4流量FW4的流體FL、對旋轉夾具7供給較第1溫度Tft為高之第2溫度Tsc的流體FL,可抑制使旋轉夾具7之溫度Tsp成為第2既定溫度T2為止之時間變長。例如,在處理第1片基板W時,對旋轉夾具7供給具有第4流量FW4及/或第2溫度Tsc的流體FL。 Furthermore, according to the first embodiment, when it is determined that the temperature Tsp of the
接著參照圖1及圖9,說明本發明實施形態2之基板處理裝置100及基板處理方法。實施形態2與實施形態1之主要差異點在於:實施形態2係將旋轉夾具溫度調節處理與其他之處理並行地執行。以下主要說明實施形態2與實施形態1之差異點。 Next, referring to FIGS. 1 and 9, a
圖9為表示實施形態2之基板處理方法之流程圖。如圖9所示般,基板處理方法係包含有步驟S71~步驟S76。基板處理 方法係對每1片之基板W藉由基板處理裝置100而執行。 Fig. 9 is a flowchart showing the substrate processing method of the second embodiment. As shown in FIG. 9, the substrate processing method includes steps S71 to S76. The substrate processing method is executed by the
圖9所示之步驟S71、步驟S72、步驟S73、步驟S74、步驟S75及步驟S76之處理,係分別與圖3所示之步驟S1、步驟S3、步驟S4、步驟S2、步驟S5及步驟S6之處理相同,適當省略說明。 The processing of step S71, step S72, step S73, step S74, step S75, and step S76 shown in FIG. 9 are respectively the same as those of step S1, step S3, step S4, step S2, step S5, and step S6 shown in FIG. 3 The processing is the same, and the description is omitted appropriately.
如圖1及圖9所示般,於步驟S71中,旋轉夾具7係保持基板W。 As shown in FIGS. 1 and 9, in step S71, the
接著,於步驟S72中,噴嘴11係對基板W之表面Wa吐出處理液,藉由處理液而處理基板W。 Next, in step S72, the
接著,並行地執行步驟S73與步驟S74。 Then, step S73 and step S74 are executed in parallel.
亦即,於步驟S73中,噴嘴15係將洗淨液吐出至基板W之表面Wa,洗淨基板W。 That is, in step S73, the
另一方面,於步驟S74,以流體噴嘴29對旋轉夾具7供給流體FL之方式,控制部30控制流體供給調節部4。其結果,流體噴嘴29係對旋轉夾具7供給流體FL,調節旋轉夾具7之溫度。步驟S74之處理係與圖3之步驟S2的處理相同。 On the other hand, in step S74, the
接著,於步驟S75中,旋轉夾具7係藉由進行旋轉而乾燥基板W。 Next, in step S75, the
接著,於步驟S76中,搬送機器人係自旋轉夾具7取出基板W。 Next, in step S76, the transfer robot system takes out the substrate W from the
以上,如參照圖9所說明般,根據實施形態2,將步驟S74(溫度調節步驟)與步驟S73並行地執行。從而,可一邊抑制在複數之基板W間處理速率產生變化的情形,一邊在與不執行步驟S74之一般基板處理方法相同的時間內,完成實施形態2之基板 處理方法。此外,步驟S74(溫度調節步驟)亦可與步驟S71、步驟S75、及步驟S76之任一者並行地執行。亦即,步驟S74亦可與不同於步驟S72(處理步驟)的步驟並行地執行。 As described above with reference to FIG. 9, according to the second embodiment, step S74 (temperature adjustment step) is executed in parallel with step S73. Therefore, it is possible to complete the substrate processing method of the second embodiment in the same time as the general substrate processing method without performing step S74 while suppressing changes in the processing rate among the plurality of substrates W. In addition, step S74 (temperature adjustment step) may be executed in parallel with any of step S71, step S75, and step S76. That is, step S74 may be executed in parallel with a step different from step S72 (processing step).
又,步驟S74(溫度調節步驟)亦可與步驟S72(處理步驟)並行地執行。尤其在將步驟S74與步驟S72並行地執行時,係例如將步驟S74與在步驟S72中之預分配處理並行地執行。預分配處理係在對基板W吐出處理液之前,朝如待機槽般之接液部而吐出處理液的處理。 In addition, step S74 (temperature adjustment step) may be executed in parallel with step S72 (processing step). In particular, when step S74 and step S72 are executed in parallel, for example, step S74 and the pre-allocation processing in step S72 are executed in parallel. The pre-distribution process is a process of discharging the treatment liquid to the liquid receiving part like a standby tank before discharging the treatment liquid to the substrate W.
接著參照圖1、圖9及圖10,說明本發明實施形態3之基板處理裝置100及基板處理方法。實施形態3與實施形態2之主要差異點在於:實施形態3係在對旋轉夾具7供給流體FL的同時亦對基板W之背面Wb供給流體FL。以下主要說明實施形態3與實施形態2之差異點。 Next, referring to FIG. 1, FIG. 9 and FIG. 10, a
如圖1及圖9所示般,實施形態3之步驟S74(溫度調節步驟)中,係與對旋轉夾具7供給流體FL並行地對基板W之表面Wa與背面Wb中之背面Wb,供給與流體FL相同的流體FL。從而,根據實施形態3,在例如流體FL為與洗淨液(沖洗液或洗淨藥液)相同液體的情況下,可同時地執行旋轉夾具7之溫度調節與基板W之背面Wb之洗淨。又,亦可與對旋轉夾具7供給流體FL並行地對基板W之背面Wb供給與流體FL相異的流體。 As shown in FIGS. 1 and 9, in step S74 (temperature adjustment step) of the third embodiment, in parallel with the supply of fluid FL to the
接著參照圖10,說明實施形態3之流體噴嘴29A。圖10為表示流體噴嘴29A之側面圖。如圖1及圖10所示般,實施形 態3之基板處理裝置100係取代圖1之流體噴嘴29,而具備有圖10之流體噴嘴29A。 Next, referring to Fig. 10, the
如圖10所示般,流體噴嘴29A係相對於基板W,於旋轉軸線AX1之延伸方向上隔著既定間隔而進行配置。流體噴嘴29A係與基板W之背面Wb相對向。流體噴嘴29A係與旋轉基部71及軸91之旋轉無關而呈靜止。 As shown in FIG. 10, the
流體噴嘴29A之第1吐出口290係朝旋轉基部71之徑方向外側開口。從而,流體噴嘴29A係自第1吐出口290吐出流體FL,對旋轉基部71之表面71b供給流體FL。具體而言,流體噴嘴29A係自第1吐出口290吐出流體FL,將流體FL直接供給至旋轉基部71之表面71b。 The
另一方面,流體噴嘴29A之第2吐出口291係朝上方向開口。而且,流體噴嘴29A係朝基板W之背面Wb,自第2吐出口291吐出流體FL。 On the other hand, the
接著參照圖10,說明對流體噴嘴29A之流體的供給。如圖10所示般,基板處理裝置100係進一步具備有中空之供給配管60、第1配管61、及第2配管62。供給配管60係通過旋轉馬達9之軸91之內部空間91a及旋轉基部71之貫通孔71a,連接至流體噴嘴29A。第1配管61係通過供給配管60之內部空間60a,連接至流體噴嘴29A之第1吐出口290。然後,第1配管61係連接於供給配管P7。其結果,流體FL係藉由供給配管P7及第1配管61而供給至流體噴嘴29A之第1吐出口290。第2配管62係通過供給配管60之內部空間60a,連接至流體噴嘴29A之第2吐出口291。然後,第2配管62係連接於供給配管P7。其結果,流體FL 係藉由供給配管P7及第2配管62而供給至流體噴嘴29A之第2吐出口291。 Next, referring to Fig. 10, the supply of fluid to the
尚且,流體噴嘴29A亦可自第2吐出口291吐出與流體FL相異的流體。此時,於第2配管62並未連接供給配管P7,而是連接其他之供給配管。又,實施形態1之基板處理裝置100係亦可取代流體噴嘴29,而具備有流體噴嘴29A。 Furthermore, the
參照圖11及圖12,說明本發明實施形態4之基板處理裝置100A。實施形態4與實施形態1之主要差異點在於:實施形態4之基板處理裝置100A係具備有3個噴嘴(噴嘴11、噴嘴15及噴嘴17)及流體供給單元21。以下主要說明實施形態4與實施形態1之差異點。 11 and 12, a
圖11為表示基板處理裝置100A之圖。如圖11所示般,基板處理裝置100A係除了實施形態1之基板處理裝置100的構成之外,進一步具備有閥V3、供給配管P3、閥V4、供給配管P4、閥V5、供給配管P5、閥V6、及供給配管P6。又,基板處理裝置100A之處理單元1A,係除了實施形態之處理單元1之構成之外,進一步具備有噴嘴17、噴嘴移動部19、流體供給單元21、及單元移動部26。 FIG. 11 is a diagram showing a
噴嘴17係朝基板W吐出SC1。供給配管P3係對噴嘴17供給SC1。閥V3係切換SC1對噴嘴17的供給開始及供給停止。 The
噴嘴移動部19係圍繞轉動軸線AX3進行轉動,於噴 嘴17之處理位置與待機位置之間,使噴嘴17水平地移動。處理位置係表示基板W之上方之位置。待機位置係表示較旋轉夾具7及導件25更外側的位置。 The
流體供給單元21係位於旋轉夾具7之上方。流體供給單元21係自吐出口22a朝基板W吐出氮氣(N2)。具體而言,吐出口22a係連接於供給路徑22。供給路徑22係連接於供給配管P4。然後,氮氣係自供給配管P4及供給路徑22供給至吐出口22a,自吐出口22a吐出。閥V4係切換氮氣對供給路徑22之供給開始與供給停止。 The
流體供給單元21係自吐出口23a朝基板W吐出沖洗液。具體而言,吐出口23a係連接於供給路徑23。進而,供給路徑23係連接於供給配管P5。然後,沖洗液係自供給配管P5及供給路徑23供給至吐出口23a,自吐出口23a吐出。閥V5係切換沖洗液對供給路徑23之供給開始與供給停止。 The
流體供給單元21係自吐出口24a朝基板W吐出IPA。具體而言,吐出口24a係連接於供給路徑24。進而,供給路徑24係連接於供給配管P4。然後,IPA係自供給配管P6及供給路徑24供給至吐出口24a,自吐出口24a吐出。閥V6係切換IPA對供給路徑24之供給開始與供給停止。 The
單元移動部26係使流體供給單元21沿著鉛直方向上升或下降。在流體供給單元21對基板W吐出氮氣、沖洗液及IPA時,單元移動部26係使流體供給單元21下降。 The
尚且,實施形態4中,噴嘴11係對基板W吐出作為處理液的磷酸液。 Furthermore, in the fourth embodiment, the
接著,參照圖11及圖12,說明實施形態4之基板處理方法。圖12為表示基板處理方法之流程圖。如圖12所示般,基板處理方法係包含有步驟S101~步驟S111。基板處理方法係對每1片之基板W藉由基板處理裝置100A而執行。 Next, referring to Figs. 11 and 12, the substrate processing method of the fourth embodiment will be described. Fig. 12 is a flowchart showing a substrate processing method. As shown in FIG. 12, the substrate processing method includes step S101 to step S111. The substrate processing method is performed by the
如圖11及圖12所示般,於步驟S101中,旋轉夾具7係保持基板W。 As shown in FIGS. 11 and 12, in step S101, the
於步驟S102中,噴嘴15係對基板W之表面Wa吐出沖洗液,洗淨基板W。 In step S102, the
於步驟S103,以流體噴嘴29對旋轉夾具7供給流體FL之方式,控制部30控制流體供給調節部4。其結果,流體噴嘴29係對旋轉夾具7供給流體FL,調節旋轉夾具7之溫度。步驟S103係相當於「溫度調節步驟」之一例。步驟S103係與圖3之步驟S2相同。 In step S103, the
於步驟S104中,噴嘴11係對基板W之表面Wa吐出磷酸液,處理基板W。步驟S104係相當於「處理步驟」之一例。 In step S104, the
於步驟S105中,旋轉夾具7係藉由進行旋轉而自基板W甩除磷酸液。 In step S105, the
於步驟S106中,噴嘴15係對基板W之表面Wa吐出沖洗液,洗淨基板W。 In step S106, the
於步驟S107中,噴嘴17係對基板W之表面Wa吐出SC1,洗淨基板W。 In step S107, the
於步驟S108中,流體供給單元21係自吐出口23a對基板W之表面Wa吐出沖洗液,洗淨基板W。 In step S108, the
於步驟S109中,流體供給單元21係自吐出口24a對 基板W之表面Wa吐出IPA,乾燥基板W。或者,流體供給單元21係自吐出口22a對基板W之表面Wa吐出氮氣。 In step S109, the
於步驟S110中,旋轉夾具7係藉由進行旋轉而乾燥基板W。 In step S110, the
於步驟S111中,搬送機器人係自旋轉夾具7取出基板W。 In step S111, the transfer robot system takes out the substrate W from the
以上,如參照圖12所說明般,根據實施形態4,步驟S103(溫度調節步驟)之處理係與實施形態1之步驟S2(溫度調節步驟)之處理相同。從而,在實施形態4中,與實施形態1同樣地可抑制在複數之基板W間處理速率產生變化的情形。 As described above with reference to FIG. 12, according to the fourth embodiment, the processing of step S103 (temperature adjustment step) is the same as the processing of step S2 (temperature adjustment step) of the first embodiment. Therefore, in the fourth embodiment, as in the first embodiment, it is possible to suppress a change in the processing rate among the plurality of substrates W.
尚且,步驟S102、步驟S106、步驟S107及步驟S108之各者係相當於「洗淨步驟」之一例。又,步驟S109及步驟S110之各者係相當於「乾燥步驟」之一例。 Furthermore, each of step S102, step S106, step S107, and step S108 corresponds to an example of the "washing step". In addition, each of step S109 and step S110 corresponds to an example of the "drying step".
又,步驟S103亦可於步驟S101之前、於步驟S101與步驟S102之間、於步驟S104與步驟S105之間、於步驟S105與步驟S106之間、於步驟S106與步驟S107之間、於步驟S107與步驟S108之間、於步驟S108與步驟S109之間、於步驟S109與步驟S110之間、於步驟S110與步驟S111之間、或於步驟S111之後執行。又,基板處理裝置100A亦可取代流體噴嘴29而具備有流體噴嘴29A(圖10)。 In addition, step S103 can also be before step S101, between step S101 and step S102, between step S104 and step S105, between step S105 and step S106, between step S106 and step S107, in step S107 Execute between step S108, between step S108 and step S109, between step S109 and step S110, between step S110 and step S111, or after step S111. In addition, the
參照圖11及圖13,說明本發明實施形態5之基板處理裝置100A。實施形態5與實施形態4之主要差異點在於:實施形態5 之基板處理裝置100A係將旋轉夾具溫度調節處理與其他之處理並行地執行。以下主要說明實施形態5與實施形態4之差異點。 11 and FIG. 13, a
圖13為表示實施形態5之基板處理方法之流程圖。如圖13所示般,基板處理方法係包含有步驟S101~步驟S111。基板處理方法係對每1片之基板W藉由基板處理裝置100A而執行。圖13之步驟S101~步驟S111係分別與參照圖12而所說明之步驟步驟S101~步驟S111相同。 Fig. 13 is a flowchart showing a substrate processing method of the fifth embodiment. As shown in FIG. 13, the substrate processing method includes step S101 to step S111. The substrate processing method is performed by the
其中,實施形態5係將步驟S103(溫度調節步驟)與步驟S102並行地執行。從而,可一邊抑制在複數之基板W間處理速率產生變化的情形,一邊在與不執行步驟S103之一般基板處理方法相同的時間內,完成實施形態5之基板處理方法。此外,步驟S103(溫度調節步驟)亦可與步驟S101及步驟S104~步驟S111之任一者並行地行。此點係與實施形態2相同。 Among them, in the fifth embodiment, step S103 (temperature adjustment step) is executed in parallel with step S102. Therefore, it is possible to complete the substrate processing method of
接著雖然根據實施例具體地說明本發明,但本發明並不限定於以下之實施例。 Next, although the present invention will be specifically explained based on examples, the present invention is not limited to the following examples.
於本發明之實施例,係藉由參照圖11所說明的基板處理裝置100A而執行參照圖13所說明的基板處理方法。亦即,使用磷酸液,對作為基板W的半導體晶圓執行蝕刻處理。然後,求出在半導體晶圓上之氮化矽膜之蝕刻速率。 In the embodiment of the present invention, the
尤其是圖13之步驟S103係在下述之條件下而被執行。亦即,自流體噴嘴29所吐出之流體FL之流量為800(毫升/分鐘)。旋轉基部71之旋轉數為10(rpm)。流體FL之吐出時間為30秒。流體FL為去離子水。流體FL之溫度為室溫。從而,在圖13 之步驟S103中,係藉由流體FL而冷卻旋轉夾具7。 In particular, step S103 in FIG. 13 is executed under the following conditions. That is, the flow rate of the fluid FL discharged from the
比較實施例之基板處理裝置100A之蝕刻速率與比較例之基板處理裝置之蝕刻速率。比較例之基板處理裝置係未執行圖13之步驟S103。比較例之基板處理裝置之條件係除了未執行步驟S103之外,其餘與實施例之基板處理裝置100A之條件相同。 The etching rate of the
圖14為表示實施例之基板處理裝置100A及比較例之藉由基板處理裝置所進行之蝕刻速率的圖表。在圖14中,橫軸係表示基板W之順序數。亦即,橫軸係在每次處理1片基板W的情況下,表示處理至第幾片的基板W。縱軸係表示蝕刻速率。 FIG. 14 is a graph showing the etching rate performed by the
如圖14所示般,比較例之基板處理裝置之蝕刻速率係藉由四角形記號200所示。比較例之基板處理裝置之蝕刻速率係在每處理1片之基板W而逐漸變大。 As shown in FIG. 14, the etching rate of the substrate processing apparatus of the comparative example is shown by a
另一方面,實施例之基板處理裝置100A之蝕刻速率,係藉由菱形記201號所示。實施例之基板處理裝置100A之蝕刻速率係於複數基板W間呈略一定。從而,可確認到若藉由流體FL冷卻旋轉夾具7,可減輕處理液之熱放射影響,可抑制蝕刻速率之變化。 On the other hand, the etching rate of the
尚且,比較例之基板處理裝置之蝕刻速率,係在第6片之基板W之處理時達到飽和。蝕刻速率之飽和係可推測表示旋轉夾具7之溫度Tsp到達飽和的情況。 Furthermore, the etching rate of the substrate processing apparatus of the comparative example reached saturation during the processing of the sixth substrate W. The saturation of the etching rate can be presumed to indicate that the temperature Tsp of the
以上參照圖式說明了本發明之實施形態。但本發明並不限定於上述實施形態,在不脫離其要旨之範圍內,可在各種之態樣中實施(例如以下所示(1)、(2)。又,亦可藉由將上述實施形態所揭示之複數構成要素加以適當組合,而形成各種發明。例如,亦可自實施形態所示的全構成要素中刪除數個構成要素。進而,亦可將 不同實施形態之構成要素加以適當組合。圖式係為了容易理解,而主要概略性地表示各個構成要素,所圖示之各構成要素之厚度、長度、個數、間隔等係因圖式製作的關係而與實際有所不同。又,在上述實施形態所示之各構成要素的材質、形狀、尺寸等僅為一例,並未特別地被限定,在實質上不脫離本發明效果之範圍內可進行各種之變更。 The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiments, and can be implemented in various aspects (for example, (1) and (2) shown below) without departing from the scope of the gist. In addition, the above-mentioned embodiments can also be implemented by The plural constituent elements disclosed in the form are appropriately combined to form various inventions. For example, several constituent elements may be deleted from all constituent elements shown in the embodiment. Furthermore, constituent elements of different embodiments may be appropriately combined The diagrams are for easy understanding, and mainly represent each component in a schematic manner. The thickness, length, number, interval, etc. of each component shown in the diagram are different from the actual situation due to the relationship between the diagrams. The materials, shapes, dimensions, etc. of the constituent elements shown in the above-mentioned embodiments are merely examples, and are not particularly limited, and various changes can be made within a range that does not substantially deviate from the effects of the present invention.
(1)於實施形態1~實施形態5,如圖1及圖11所示般,係將流體噴嘴29及流體噴嘴29A配置於旋轉馬達9之旋轉軸線AX1上。惟,在可對旋轉夾具7供給流體FL之前提下,將流體FL供給至旋轉夾具7的噴嘴之位置並未特別地被限定。例如亦可將噴嘴配置於旋轉夾具7之徑方向外側,將流體FL供給至旋轉夾具7。 (1) In Embodiments 1 to 5, as shown in FIGS. 1 and 11, the
(2)於實施形態1~實施形態5,係對每片基板W執行溫度調節步驟(步驟S2、步驟S74及步驟S103)。惟,在旋轉夾具7之溫度Tsp之變動不造成處理速率之變動的前提下,亦可依基板W之每既定片數NM執行溫度調節步驟。既定片數NM係表示2片以上之整數。 (2) In Embodiment 1 to
本發明係關於基板處理方法及基板處理裝置,具有產業上之可利用性。 The present invention relates to a substrate processing method and a substrate processing apparatus, and has industrial applicability.
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