TWI722386B - Determination method, exposure method, exposure device, article manufacturing method, and storage medium - Google Patents

Determination method, exposure method, exposure device, article manufacturing method, and storage medium Download PDF

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TWI722386B
TWI722386B TW108104887A TW108104887A TWI722386B TW I722386 B TWI722386 B TW I722386B TW 108104887 A TW108104887 A TW 108104887A TW 108104887 A TW108104887 A TW 108104887A TW I722386 B TWI722386 B TW I722386B
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Taiwan
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focus position
level
optical system
aforementioned
projection optical
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TW108104887A
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Chinese (zh)
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TW201939325A (en
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籔伸彦
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日商佳能股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

提供一種決定方法，係決定將掩模的圖案投影到基板的投影光學系統的最佳聚焦位置，該決定方法，其特徵係，具有：第1工程，取得表示經前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與複數個位置的各個位置的關係的函數；第2工程，求出成為前述函數和第1水準交叉的2個點的中點的第1聚焦位置；第3工程，求出成為前述函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置；第4工程，求出成為前述函數和前述第1水準與前述第2水準之間的第3水準交叉的2個點的中點的第3聚焦位置；以及第5工程，根據前述第3聚焦位置、前述第1聚焦位置與前述第3聚焦位置的第1差分、及前述第2聚焦位置與前述第3聚焦位置的第2差分，決定前述最佳聚焦位置。A method for determining the optimal focus position of a projection optical system for projecting a pattern of a mask on a substrate is provided. The method for determining is characterized by having: a first step, obtaining representations of the projection optical system through the projection optical system. The measurement result of the first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the optical system, and the function of the relationship between each position of the plurality of positions; the second step is to obtain the aforementioned function and the first 1 The first focus position of the midpoint of the two points where the level intersects; the third step is to find the second focus position that becomes the midpoint of the two points where the aforementioned function intersects with the second level that is different from the first level; The fourth step is to find the third focus position which is the midpoint of the two points where the aforementioned function and the third level between the aforementioned first level and the aforementioned second level intersect; and the fifth step, based on the aforementioned third focus position , The first difference between the first focus position and the third focus position and the second difference between the second focus position and the third focus position determine the best focus position.

Description

決定方法、曝光方法、曝光裝置、物品的製造方法及記憶媒體Determination method, exposure method, exposure device, article manufacturing method, and storage medium

本發明涉及決定方法、曝光方法、曝光裝置、物品的製造方法以及記憶媒體。The present invention relates to a determination method, an exposure method, an exposure device, an article manufacturing method, and a storage medium.

半導體元件、平板顯示器(FPD)等元件是經由光微影工程而製造的。光微影工程包括曝光工程，在該曝光工程中，將掩模或者掩模原版(原版)的圖案，經由包括透鏡、反射鏡的投影光學系統投影到塗敷有抗蝕劑(感光劑)的玻璃板、晶片等基板，對上述基板進行曝光。 在曝光工程中，需要使投影光學系統的最佳聚焦位置、即掩模的圖案的圖像以最高的對比度形成的位置、和基板的表面位置(塗敷有抗蝕劑的面)準確地一致。在投影光學系統的最佳聚焦位置和基板的表面位置未一致時，掩模的圖案的像產生模糊，無法在基板上形成期望的圖案的像。 在日本特開平6-216004號公報中，提出了求出投影光學系統的最佳聚焦位置的技術。在日本特開平6-216004號公報公開的技術中，首先，在將塗敷有抗蝕劑的基板的聚焦位置設定為初始值的狀態下，經由聚焦測量用圖案對基板進行曝光(在基板上形成聚焦測量用圖案的像)。接下來，在將基板的聚焦位置變更了預定的步進量的狀態下，經由聚焦測量用圖案對基板進行曝光。直至基板的聚焦位置到達變更範圍的下限、上限，反復這樣的基板的聚焦位置的變更和基板的曝光，如果基板的聚焦位置到達變更範圍的下限、上限，則使基板顯影。接下來，測量與在顯影後的基板上形成的聚焦測量用圖案對應的抗蝕劑像(圖案像)的大小，使用最小二乘法利用聚焦位置的函數來近似圖案像的大小。然後，設定比近似函數的最大值小了預先決定的值的閾值，求出上述閾值和近似函數交叉的2個點(聚焦位置)，將2個點的中間的位置作為投影光學系統的最佳聚焦位置。這樣，在日本特開平6-216004號公報公開的技術中，利用在理想的成像狀態下，與在基板上形成的聚焦測量用圖案對應的圖案像的大小由於聚焦位置而導致的變化關於最佳聚焦位置為對稱這一情況。其原因為，散焦針對圖像形成的影響在正側、負側大致相同。Semiconductor components, flat panel displays (FPD) and other components are manufactured through the photolithography process. The photolithography process includes an exposure process. In this exposure process, the pattern of a mask or an original mask (original plate) is projected onto a resist (sensitizer) coated by a projection optical system including lenses and mirrors. Substrates such as glass plates and wafers are exposed to the above-mentioned substrates. In the exposure process, it is necessary to accurately match the best focus position of the projection optical system, that is, the position where the image of the mask pattern is formed with the highest contrast, and the surface position of the substrate (the surface where the resist is applied). . When the best focus position of the projection optical system and the surface position of the substrate do not match, the image of the pattern of the mask is blurred, and the image of the desired pattern cannot be formed on the substrate. In Japanese Patent Laid-Open No. 6-216004, a technique for finding the best focus position of the projection optical system is proposed. In the technique disclosed in Japanese Patent Application Laid-Open No. 6-216004, first, in a state where the focus position of the resist-coated substrate is set to an initial value, the substrate is exposed via the focus measurement pattern (on the substrate). An image of the pattern for focus measurement is formed). Next, in a state where the focus position of the substrate is changed by a predetermined step amount, the substrate is exposed through the pattern for focus measurement. Until the focus position of the substrate reaches the lower limit and the upper limit of the change range, the change of the focus position of the substrate and the exposure of the substrate are repeated, and if the focus position of the substrate reaches the lower limit and the upper limit of the change range, the substrate is developed. Next, the size of the resist image (pattern image) corresponding to the focus measurement pattern formed on the developed substrate is measured, and the size of the pattern image is approximated by the function of the focus position using the least square method. Then, set a threshold value that is smaller than the maximum value of the approximate function by a predetermined value, find the two points (focus positions) where the above threshold value and the approximate function intersect, and use the middle position of the two points as the optimum of the projection optical system Focus position. In this way, in the technique disclosed in Japanese Patent Application Laid-Open No. 6-216004, the change in the size of the pattern image corresponding to the focus measurement pattern formed on the substrate due to the focus position in an ideal imaging state is optimized for The focus position is symmetrical. The reason is that the effect of defocus on image formation is approximately the same on the positive side and the negative side.

然而，實際上，有時與在基板上形成的聚焦測量用圖案對應的圖案像的大小由於聚焦位置而導致的變化關於最佳聚焦位置為非對稱。針對每個聚焦位置在基板上的不同的位置形成與聚焦測量用圖案對應的圖案像。因此，在存在依賴於基板上的位置而使圖案像的大小變化的主要原因的情況下，圖案像的大小由於聚焦位置而導致的變化關於最佳聚焦位置為非對稱。作為這樣的主要原因，可以舉出抗蝕劑膜厚由於基板上的位置而導致的差、顯影時的顯影液的液量、滯留時間由於基板上的位置而導致的差、耀斑光強度由於基板上的位置而導致的差等。另外，即使在投影光學系統具有球面像差等像差的情況下，圖案像的大小由於聚焦位置而導致的變化仍關於最佳聚焦位置為非對稱。 在這樣的情況下，用聚焦位置的函數對圖案像的大小進行近似而得到的近似函數也為非對稱的形狀，所以依賴於將閾值設定於何處而最佳聚焦位置發生大幅變化。因此，認為根據非對稱的形狀的近似函數求出的最佳聚焦位置的可靠性低(與真實值的差大)。但是，在以往技術中，無法定量地評價根據近似函數求出的最佳聚焦位置的可靠性，所以有可能將與真實值的差大的聚焦位置作為最佳聚焦位置。 本發明提供一種有利於決定投影光學系統的最佳聚焦位置的決定方法。 作為本發明的一個側面的決定方法是決定將掩模的圖案投影到基板的投影光學系統的最佳聚焦位置的決定方法，其特徵在於，具有：第1工程，取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的函數；第2工程，求出成為前述函數和第1水準交叉的2個點的中點的第1聚焦位置；第3工程，求出成為前述函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置；第4工程，求出成為前述函數和前述第1水準與前述第2水準之間的第3水準交叉的2個點的中點的第3聚焦位置；以及第5工程，根據前述第3聚焦位置、前述第1聚焦位置與前述第3聚焦位置的第1差分、及前述第2聚焦位置與前述第3聚焦位置的第2差分，決定前述最佳聚焦位置。 作為本發明的另一側面的決定方法是決定將掩模的圖案投影到基板的投影光學系統的最佳聚焦位置的決定方法，其特徵在於，具有：第1工程，取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的函數；第2工程，求出成為前述函數和第1水準交叉的2個點的中點的第1聚焦位置；第3工程，求出成為前述函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置；以及第4工程，根據前述第1聚焦位置與前述第2聚焦位置的差分，決定前述最佳聚焦位置。 作為本發明的又另一側面的曝光方法是使用具有將掩模的圖案投影到基板的投影光學系統的曝光裝置對前述基板進行曝光的曝光方法，其特徵在於，具有：第1工程，決定前述投影光學系統的最佳聚焦位置；第2工程，根據在前述第1工程中決定的最佳聚焦位置，調整前述曝光裝置；以及第3工程，使用在前述第2工程中調整後的前述曝光裝置對前述基板進行曝光，前述第1工程包括：取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的函數的工程；求出成為前述函數和第1水準交叉的2個點的中點的第1聚焦位置的工程；求出成為前述函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置的工程；求出成為前述函數和前述第1水準與前述第2水準之間的第3水準交叉的2個點的中點的第3聚焦位置的工程；以及根據前述第3聚焦位置、前述第1聚焦位置與前述第3聚焦位置的第1差分、及前述第2聚焦位置與前述第3聚焦位置的第2差分，決定前述最佳聚焦位置的工程。 作為本發明的又另一側面的曝光方法是使用具有將掩模的圖案投影到基板的投影光學系統的曝光裝置對前述基板進行曝光的曝光方法，其特徵在於，具有：第1工程，決定前述投影光學系統的最佳聚焦位置；第2工程，根據在前述第1工程中決定的最佳聚焦位置，調整前述曝光裝置；以及第3工程，使用在前述第2工程中調整後的前述曝光裝置對前述基板進行曝光，前述第1工程包括：取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的函數的工程；求出成為前述函數和第1水準交叉的2個點的中點的第1聚焦位置的工程；求出成為前述函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置的工程；以及根據前述第1聚焦位置與前述第2聚焦位置的差分，決定前述最佳聚焦位置的工程。 作為本發明的又另一側面的曝光裝置是對基板進行曝光的曝光裝置，其特徵在於，具有：投影光學系統，將掩模的圖案投影到前述基板；以及處理部，進行決定前述投影光學系統的最佳聚焦位置的處理，前述處理部取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的函數，求出成為前述函數和第1水準交叉的2個點的中點的第1聚焦位置，求出成為前述函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置，求出成為前述函數和前述第1水準與前述第2水準之間的第3水準交叉的2個點的中點的第3聚焦位置，根據前述第3聚焦位置、前述第1聚焦位置與前述第3聚焦位置的第1差分、及前述第2聚焦位置與前述第3聚焦位置的第2差分，決定前述最佳聚焦位置。 作為本發明的又另一側面的曝光裝置是對基板進行曝光的曝光裝置，其特徵在於，具有：投影光學系統，將掩模的圖案投影到前述基板；以及處理部，進行決定前述投影光學系統的最佳聚焦位置的處理，前述處理部取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的函數，求出成為前述函數和第1水準交叉的2個點的中點的第1聚焦位置，求出成為前述函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置，根據前述第1聚焦位置與前述第2聚焦位置的差分，決定前述最佳聚焦位置。 作為本發明的又另一側面的物品的製造方法具有：使用曝光方法對塗敷於基板的感光劑進行曝光的工程；使被曝光的前述感光劑顯影而形成前述感光劑的圖案的工程；以及通過根據顯影的前述感光劑的圖案將圖案形成於前述基板並對形成有圖案的基板進行加工從而製造物品的工程，前述曝光方法是使用具有將掩模的圖案投影到前述基板的投影光學系統的曝光裝置對前述基板進行曝光的曝光方法，前述曝光方法具有：第1工程，決定前述投影光學系統的最佳聚焦位置；第2工程，根據在前述第1工程中決定的最佳聚焦位置，調整前述曝光裝置；以及第3工程，使用在前述第2工程中調整後的前述曝光裝置對前述基板進行曝光，前述第1工程包括：取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的函數的工程；求出成為前述函數和第1水準交叉的2個點的中點的第1聚焦位置的工程；求出成為前述函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置的工程；求出成為前述函數和前述第1水準與前述第2水準之間的第3水準交叉的2個點的中點的第3聚焦位置的工程；以及根據前述第3聚焦位置、前述第1聚焦位置與前述第3聚焦位置的第1差分、及前述第2聚焦位置與前述第3聚焦位置的第2差分，決定前述最佳聚焦位置的工程。 作為本發明的又另一側面的物品的製造方法具有：使用曝光方法對塗敷於基板的感光劑進行曝光的工程；使被曝光的前述感光劑顯影而形成前述感光劑的圖案的工程；以及通過根據顯影的前述感光劑的圖案將圖案形成於前述基板並對形成有圖案的基板進行加工從而製造物品的工程，前述曝光方法是使用具有將掩模的圖案投影到前述基板的投影光學系統的曝光裝置對前述基板進行曝光的曝光方法，前述曝光方法具有：第1工程，決定前述投影光學系統的最佳聚焦位置；第2工程，根據在前述第1工程中決定的最佳聚焦位置，調整前述曝光裝置；以及第3工程，使用在前述第2工程中調整後的前述曝光裝置對前述基板進行曝光，前述第1工程包括：取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的函數的工程；求出成為前述函數和第1水準交叉的2個點的中點的第1聚焦位置的工程；求出成為前述函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置的工程；以及根據前述第1聚焦位置與前述第2聚焦位置的差分，決定前述最佳聚焦位置的工程。 作為本發明的又另一側面的記憶媒體是存儲有用於使電腦執行決定將掩模的圖案投影到基板的投影光學系統的最佳聚焦位置的決定方法的各工程的程式的記憶媒體，其特徵在於，前述決定方法具有：第1工程，取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的函數；第2工程，求出成為前述函數和第1水準交叉的2個點的中點的第1聚焦位置；第3工程，求出成為前述函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置；第4工程，求出成為前述函數和前述第1水準與前述第2水準之間的第3水準交叉的2個點的中點的第3聚焦位置；以及第5工程，根據前述第3聚焦位置、前述第1聚焦位置與前述第3聚焦位置的第1差分、及前述第2聚焦位置與前述第3聚焦位置的第2差分，決定前述最佳聚焦位置。 作為本發明的又另一側面的記憶媒體是存儲有用於使電腦執行決定將掩模的圖案投影到基板的投影光學系統的最佳聚焦位置的決定方法的各工程的程式的記憶媒體，其特徵在於，前述決定方法具有：第1工程，取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的函數；第2工程，求出成為前述函數和第1水準交叉的2個點的中點的第1聚焦位置；第3工程，求出成為前述函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置；以及第4工程，根據前述第1聚焦位置與前述第2聚焦位置的差分，決定前述最佳聚焦位置。 本發明的進一步的目的或者其他側面通過以下參照附圖說明的優選的實施方式將變得更加明確。 根據本發明，例如，能夠提供有利於決定投影光學系統的最佳聚焦位置的決定方法。However, in reality, the change in the size of the pattern image corresponding to the focus measurement pattern formed on the substrate due to the focus position may be asymmetric with respect to the optimal focus position. A pattern image corresponding to the pattern for focus measurement is formed at a different position on the substrate for each focus position. Therefore, in the case where there is a main cause of the change in the size of the pattern image depending on the position on the substrate, the change in the size of the pattern image due to the focus position is asymmetric with respect to the best focus position. The main reasons for this include the difference in resist film thickness due to the position on the substrate, the amount of developer during development, the difference in residence time due to the position on the substrate, and the difference in flare light intensity due to the substrate. The difference caused by the upper position. In addition, even when the projection optical system has aberrations such as spherical aberration, the change in the size of the pattern image due to the focus position is still asymmetric with respect to the best focus position. In such a case, the approximate function obtained by approximating the size of the pattern image with the function of the focus position also has an asymmetric shape, and therefore the optimal focus position changes greatly depending on where the threshold is set. Therefore, it is considered that the reliability of the optimal focus position obtained from the approximation function of the asymmetric shape is low (the difference from the true value is large). However, in the prior art, it is impossible to quantitatively evaluate the reliability of the best focus position obtained from the approximate function, so there is a possibility that a focus position with a large difference from the true value may be regarded as the best focus position. The present invention provides a method for determining the best focus position of a projection optical system. As one aspect of the present invention, the method of determining is a method of determining the optimal focus position of the projection optical system that projects the pattern of the mask on the substrate, and is characterized by having: a first step to obtain representations via the aforementioned projection optical system. A function of the measurement result of the first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system and each position of the plurality of positions; the second step is obtained as The first focus position is the midpoint of the two points where the aforementioned function intersects the first level; the third step is to find the first focus position that becomes the midpoint of the two points where the aforementioned function intersects with the second level that is different from the first level. 2 focus position; the fourth step, find the third focus position that becomes the midpoint of the two points between the aforementioned function and the third level between the aforementioned first level and the aforementioned second level; and the fifth step, based on the aforementioned The third focus position, the first difference between the first focus position and the third focus position, and the second difference between the second focus position and the third focus position determine the best focus position. As another aspect of the present invention, the method of determining is a method of determining the optimal focus position of the projection optical system that projects the pattern of the mask on the substrate, and it is characterized by having: a first step to obtain the display via the projection optical system The measurement result of the first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system, and a function of the relationship between each position of the plurality of positions; the second step, find The first focus position becomes the midpoint of the two points where the aforementioned function intersects the first level; the third step is to find the midpoint of the two points where the aforementioned function intersects with the second level that is different from the first level. The second focus position; and the fourth step, determining the best focus position based on the difference between the first focus position and the second focus position. An exposure method as yet another aspect of the present invention is an exposure method for exposing the substrate using an exposure device having a projection optical system that projects a pattern of a mask onto the substrate, and is characterized by including: a first step, determining the foregoing The best focus position of the projection optical system; the second step is to adjust the exposure device based on the best focus position determined in the first step; and the third step is to use the exposure device adjusted in the second step Exposing the substrate, and the first process includes: obtaining measurement results representing the first measurement patterns transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, The process of the function of the relationship with each of the aforementioned plural positions; the process of finding the first focus position that becomes the midpoint of the two points where the aforementioned function and the first level intersect; the process of finding the aforementioned function and the first The process of the second focus position at the midpoint of the two points where the second level with different levels intersects; find the center of the two points where the above function and the third level between the first level and the second level intersect The process of the third focus position of the point; and based on the third focus position, the first difference between the first focus position and the third focus position, and the second difference between the second focus position and the third focus position, The process of determining the aforementioned best focus position. An exposure method as yet another aspect of the present invention is an exposure method for exposing the substrate using an exposure device having a projection optical system that projects a pattern of a mask onto the substrate, and is characterized by including: a first step, determining the foregoing The best focus position of the projection optical system; the second step is to adjust the exposure device based on the best focus position determined in the first step; and the third step is to use the exposure device adjusted in the second step Exposing the substrate, and the first process includes: obtaining measurement results representing the first measurement patterns transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, The process of the function of the relationship with each of the aforementioned plural positions; the process of finding the first focus position that becomes the midpoint of the two points where the aforementioned function and the first level intersect; the process of finding the aforementioned function and the first The process of determining the best focus position based on the difference between the first focus position and the second focus position. An exposure apparatus as yet another aspect of the present invention is an exposure apparatus for exposing a substrate, and is characterized by having: a projection optical system that projects a pattern of a mask onto the substrate; and a processing unit that determines the projection optical system For the processing of the best focus position, the processing unit obtains a measurement result representing the first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and The function of the relationship between the positions of the plurality of positions, the first focus position that becomes the midpoint of the two points where the function and the first level intersect is obtained, and the second focus position that becomes the function and the second level different from the first level is obtained. The second focus position of the midpoint of the two points where the levels intersect, and the third focus position that becomes the midpoint of the two points where the aforementioned function intersects with the third level between the first level and the second level is calculated, The optimal focus position is determined based on the third focus position, the first difference between the first focus position and the third focus position, and the second difference between the second focus position and the third focus position. An exposure apparatus as yet another aspect of the present invention is an exposure apparatus for exposing a substrate, and is characterized by having: a projection optical system that projects a pattern of a mask onto the substrate; and a processing unit that determines the projection optical system For the processing of the best focus position, the processing unit obtains a measurement result representing the first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and The function of the relationship between the positions of the plurality of positions, the first focus position that becomes the midpoint of the two points where the function and the first level intersect is obtained, and the second focus position that becomes the function and the second level different from the first level is obtained. The second focus position at the midpoint of the two points where the levels intersect is determined based on the difference between the first focus position and the second focus position. The method of manufacturing an article as yet another aspect of the present invention includes: a process of exposing a photosensitive agent applied to a substrate using an exposure method; a process of developing the exposed photosensitive agent to form a pattern of the photosensitive agent; and The process of manufacturing an article by forming a pattern on the substrate according to the pattern of the developed photosensitive agent and processing the patterned substrate. The exposure method uses a projection optical system that projects the pattern of the mask onto the substrate. An exposure method for exposing the substrate by an exposure device. The exposure method includes: a first step, determining the best focus position of the projection optical system; a second step, adjusting based on the best focus position determined in the first step The exposure device; and a third process, using the exposure device adjusted in the second process to expose the substrate, and the first process includes: acquiring the image plane of the projection optical system through the projection optical system. Engineering of the function of the relationship between the measurement results of the first measurement pattern transferred at a plurality of positions in the optical axis direction on the side of the optical axis and the respective positions of the aforementioned plurality of positions; find the two that become the intersection of the aforementioned function and the first level The process of the first focus position of the midpoint of the point; the process of obtaining the second focus position that becomes the midpoint of the two points intersecting the aforementioned function and the second level different from the aforementioned first level; the process of obtaining the aforementioned function and The process of the third focus position at the midpoint of the two points intersecting the third level between the first level and the second level; and based on the third focus position, the first focus position, and the third focus position The first difference between, and the second difference between the second focus position and the third focus position determine the process of the best focus position. The method of manufacturing an article as yet another aspect of the present invention includes: a process of exposing a photosensitive agent applied to a substrate using an exposure method; a process of developing the exposed photosensitive agent to form a pattern of the photosensitive agent; and The process of manufacturing an article by forming a pattern on the substrate according to the pattern of the developed photosensitive agent and processing the patterned substrate. The exposure method uses a projection optical system that projects the pattern of the mask onto the substrate. An exposure method for exposing the substrate by an exposure device. The exposure method includes: a first step, determining the best focus position of the projection optical system; a second step, adjusting based on the best focus position determined in the first step The exposure device; and a third process, using the exposure device adjusted in the second process to expose the substrate, and the first process includes: acquiring the image plane of the projection optical system through the projection optical system. Engineering of the function of the relationship between the measurement results of the first measurement pattern transferred at a plurality of positions in the optical axis direction on the side of the optical axis and the respective positions of the aforementioned plurality of positions; find the two that become the intersection of the aforementioned function and the first level The process of finding the first focus position of the midpoint of the point; the process of finding the second focus position that becomes the midpoint of the two points intersecting the aforementioned function and the second level different from the aforementioned first level; and based on the aforementioned first focus The difference between the position and the second focus position determines the process of the best focus position. The storage medium as still another aspect of the present invention is a storage medium storing programs of each process for making a computer execute a method of determining the optimal focus position of a projection optical system for projecting a pattern of a mask on a substrate, and is characterized by The determination method includes: a first step of obtaining a measurement result representing a first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and The function of the relationship between the positions of the aforementioned plural positions; the second step is to find the first focus position that becomes the midpoint of the two points where the aforementioned function and the first level intersect; the third step is to find the aforementioned function and The second focus position of the midpoint of the two points where the first level is different from the second level; the fourth step is to find the intersection of the foregoing function and the third level between the foregoing first level and the foregoing second level The third focus position at the midpoint of the two points; and the fifth process, based on the third focus position, the first difference between the first focus position and the third focus position, and the second focus position and the third focus position The second difference of the focus position determines the above-mentioned best focus position. The storage medium as still another aspect of the present invention is a storage medium storing programs of each process for making a computer execute a method of determining the optimal focus position of a projection optical system for projecting a pattern of a mask on a substrate, and is characterized by The determination method includes: a first step of obtaining a measurement result representing a first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and The function of the relationship between the positions of the aforementioned plural positions; the second step is to find the first focus position that becomes the midpoint of the two points where the aforementioned function and the first level intersect; the third step is to find the aforementioned function and The second focus position at the midpoint of the two points where the second level with the different first level intersects; and the fourth step determines the best focus position based on the difference between the first focus position and the second focus position. The further purpose or other aspects of the present invention will become more clarified by the preferred embodiments described below with reference to the accompanying drawings. According to the present invention, for example, it is possible to provide a determining method that is advantageous for determining the optimal focus position of the projection optical system.

以下，參照附圖，說明本發明的優選的實施方式。此外，在各圖中，對同一部件附加同一參照編號，省略重複的說明。 作為本發明的一個側面，說明決定使來自物面的光在像面成像的光學系統的最佳聚焦位置的決定方法。在本實施方式中，以在決定將在曝光裝置中使用的掩模的圖案投影到基板的投影光學系統的最佳聚焦位置時應用本發明的情況為例子進行說明。在此，投影光學系統的最佳聚焦位置是指，掩模的圖案的像以最高的對比度形成的位置。 首先，參照圖1，說明曝光裝置100。圖1是示出曝光裝置100的結構的概略圖。曝光裝置100是在作為半導體元件、平板顯示器(FPD)等元件的製造工程的光微影工程中使用的光微影裝置。曝光裝置100經由掩模對基板進行曝光，將掩模的圖案轉印到基板。 曝光裝置100如圖1所示，具有照明光學系統1、投影光學系統7、掩模平台22、基板平台62以及控制部80。在此，以將水平面設為XY平面、將鉛直方向設為Z軸方向的方式，定義XYZ坐標系。 曝光裝置100將從光源(未圖示)射出的光經由照明光學系統1照射到掩模21，使來自掩模21的圖案的光經由投影光學系統7在基板61上成像。在基板61上，塗敷有抗蝕劑(感光劑)，所以通過經由後序工程的顯影工程，將掩模21的圖案轉印到基板61。 在對基板61進行曝光時，在±Y方向上，對保持掩模21的掩模平台22、和保持基板61的基板平台62同步地進行掃描。由此，能夠在比投影光學系統7的投影區域大的尺寸的區域(掩模圖案區域)對基板61進行曝光。在掩模平台22以及基板平台62的掃描結束後，使基板平台62在X方向和/或Y方向上步進移動一定量，對基板61的其他鏡頭區域進行曝光。在基板61的所有鏡頭區域的曝光結束後，將基板61從曝光裝置100搬出，將新的基板搬入到曝光裝置100。 在本實施方式中，投影光學系統7是包括凹面反射鏡3、梯形反射鏡4以及凸面反射鏡5的反射型光學系統。另外，投影光學系統7在兩側(物面側以及像面側)是遠心。換言之，從投影光學系統7入射到基板61的光的主光線在物面側以及像面側這兩方中與Z軸平行。 控制部80由包括CPU、記憶體等的資訊處理裝置(電腦)構成，依照儲存於記憶體的程式控制曝光裝置100的各部分。控制部80通過控制曝光裝置100的各部分的動作，進行對基板61實施曝光而將掩模21的圖案轉印到基板61的曝光處理。另外，在本實施方式中，控制部80還作為進行決定投影光學系統7的最佳聚焦位置的決定處理的處理部發揮功能。但是，上述決定處理無需一定由控制部80進行，也可以由曝光裝置100的外部的資訊處理裝置進行，從資訊處理裝置取得投影光學系統7的最佳聚焦位置。 在經由投影光學系統7將掩模21的圖案投影到基板61時，需要使投影光學系統7的最佳聚焦位置、和基板61的表面位置(塗敷有抗蝕劑的面)準確地一致。在投影光學系統7的最佳聚焦位置和基板61的表面位置未一致時，經由投影光學系統7形成在基板上的掩模21的圖案的像產生模糊，所以無法在基板上形成期望的圖案的像。 因此，在本實施方式中，在對基板61進行曝光之前，進行決定投影光學系統7的最佳聚焦位置的決定處理。在決定處理中，首先，一邊變更相對投影光學系統7的測試基板的光軸方向、即Z軸方向的位置(聚焦位置)，一邊經由投影光學系統7，將測量圖案的像投影到測試基板。然後，測量經由顯影工程在測試基板上形成的、與測量圖案對應的抗蝕劑像(圖案像)的線寬，根據其測量結果，決定投影光學系統7的最佳聚焦位置。使這樣決定的投影光學系統7的最佳聚焦位置和基板61的表面位置一致而對基板61進行曝光。由此，經由投影光學系統7在基板上形成的掩模21的圖案的像不會產生模糊，而能夠在基板上形成期望的圖案的像。此外，在後面詳細說明決定投影光學系統7的最佳聚焦位置的決定處理。另外，在本實施方式中，在決定處理中，將經由投影光學系統7對測量圖案的像進行投影的物件作為測試基板，但也可以代替測試基板，而使用被轉印掩模21的圖案的基板61。 圖2是示出包括複數個測量圖案的測量圖案群10的一個例子的圖。測量圖案群10既可以設置於掩模21，也可以設置於與掩模21獨立的聚焦測量用掩模。測量圖案群10例如如圖2所示，包括圖案延伸的方向相互不同的4個測量圖案101、102、103以及104。測量圖案101至104分別是孤立的單一的線圖案，被稱為孤立線(等規)圖案。測量圖案101至104被用於決定針對分別延伸的方向的圖案的投影光學系統7的最佳聚焦位置。因此，根據針對形成於掩模21的哪個方向的圖案決定投影光學系統7的最佳聚焦位置，決定測量圖案101至104中的使用的測量圖案即可。測量圖案101至104被設計成在投影光學系統7的最佳聚焦位置和基板61的表面位置一致的情況下，該像的線寬成為最大。因此，通過測量經由投影光學系統7在投影光學系統7的像面側的光軸方向、即Z軸方向的複數個位置的各個位置處形成的測量圖案101至104的圖像的線寬，能夠求出投影光學系統7的最佳聚焦位置。 以下，參照圖3，詳細說明決定投影光學系統7的最佳聚焦位置的決定處理。在S302中，將測試基板的聚焦位置設定為初始聚焦位置。具體而言，使基板平台62保持塗敷有抗蝕劑的測試基板，以使測試基板的聚焦位置成為初始聚焦位置的方式，使基板平台62移動。初始聚焦位置例如被設定為使測試基板在Z軸方向上移動的範圍(移動範圍)的下限位置(Z座標負側的極限)或者上限位置(Z座標正側的極限)。在本實施方式中，初始聚焦位置被設定為移動範圍的下限位置。 在S304中，經由投影光學系統7將測量圖案的圖像投影到測試基板，對測試基板進行曝光。具體而言，使掩模平台22保持設置有圖2所示的測量圖案群10的掩模，經由投影光學系統7，在測試基板上形成測量圖案101至104中的1個測量圖案的像。 在S306中，判定測試基板的聚焦位置是否到達移動範圍的上限位置。在測試基板的聚焦位置未到達移動範圍的上限位置的情況下，轉移到S308。 在S308中，使測試基板在Z軸方向上步進移動。具體而言，使保持測試基板的基板平台在Z軸方向上移動預定的步進量。在本實施方式中，初始聚焦位置被設定為移動範圍的下限位置，所以以使測試基板上升的方式，使基板平台向Z座標正側移動。在S302中，在初始聚焦位置被設定為移動範圍的上限位置的情況下，以使測試基板下降的方式，使基板平台向Z座標負側移動。 在S310中，使測試基板在X軸方向和/或Y軸方向上步進移動。具體而言，以使測試基板的未曝光區域曝光的方式，使保持測試基板的基板平台在X軸方向和/或Y軸方向上移動預定的步進量。 這樣，直至測試基板的聚焦位置到達移動範圍的上限位置，反復進行S304至S310。然後，在測試基板的聚焦位置到達移動範圍的上限位置後，在S306中，轉移到S312。 在S312中，從曝光裝置100搬出測試基板。在S314中，使從曝光裝置100搬出的測試基板顯影。 在S316中，使用顯微鏡，測量在顯影後的測試基板上形成的、與測量圖案對應的抗蝕劑圖像、即轉印到測試基板的測量圖案的線寬。將與測試基板的聚焦位置Fi(i=0，1，2，･･･)對應的測量圖案的線寬的測量值(測量結果)設為Li。在抗蝕劑圖像走形等而無法測量測量圖案的線寬的情況下，與其聚焦位置Fi對應的測量圖案的線寬的測量值Li成為無效。 在S318中，判定在S316中得到的測量圖案的測量值(有效的測量值)的數量是否為預定數以下(例如4個以下)。在測量圖案的測量值的數量是預定數以下的情況下，當作測量條件有問題，轉移到S320。在S320中，通知決定投影光學系統7的最佳聚焦位置的決定處理錯誤了(錯誤通知)，轉移到S302，從經由投影光學系統7將測量圖案的像投影到測試基板而使測試基板曝光開始重新進行。另一方面，在測量圖案的測量值的數量並非預定數以下的情況下，轉移到S322。 在S322中，取得表示在S316中得到的測量圖案的測量值Li與測試基板的聚焦位置Fi的關係的近似函數。具體而言，將在S316中得到的測量圖案的測量值Li作為聚焦位置的函數，進行利用最小二乘法的函數擬合。在函數擬合中使用的函數例如是聚焦位置的4次多項式。此外，在本實施方式中，以近似函數為例子進行說明，但是只要是表示在S316中得到的測量圖案的測量值Li與測試基板的聚焦位置Fi的關係的函數即可。 在S324中，根據在S322中取得的近似函數，在某個聚焦範圍內，求出近似函數的最大值M以及與最大值M對應的聚焦位置FM。 在S326中，針對在S322中取得的近似函數，設定3個限幅值T1、T2以及T3，求出3個聚焦位置F1C、F2C以及F3C。限幅值T1、T2以及T3是以與在S322中取得的近似函數交叉的方式設定的限幅水準(直線)。 具體而言，首先設定限幅值T3(水準)，求出成為在S322中取得的近似函數和限幅值T3交叉的2個點的中點的聚焦位置F3C。在此，將在S322中取得的近似函數和限幅值T3交叉的2個點中的負側的點設為聚焦位置F3A，將正側的點設為聚焦位置F3B。並且，根據聚焦位置F3A以及F3B，求出作為它們的平均值的聚焦位置F3C。限幅值T3設定比在S324中求出的近似函數的最大值M稍微小的值是妥當的。例如，將近似函數的最大值M作為基準，設為T3=0.90×M。但是，限幅值T3可以不管近似函數的最大值M如何都設為固定值。 接下來，使用與限幅值T3不同的限幅值T1以及T2，同樣地求出聚焦位置。限幅值T1是比限幅值T3大一定量的值，限幅值T2是比限幅值T3小一定量的值。例如，設T1=0.95×M，T2=0.85×M。然後，求出成為在S322中取得的近似函數和限幅值T1交叉的2個點的中點的聚焦位置F1C。在此，將在S322中取得的近似函數和限幅值T1交叉的2個點中的負側的點設為聚焦位置F1A，將正側的點設為聚焦位置F1B。然後，根據聚焦位置F1A以及F1B，求出作為它們的平均值的聚焦位置F1C。同樣地，求出成為在S322中取得的近似函數和限幅值T2交叉的2個點的中點的聚焦位置F2C。在此，將在S322中取得的近似函數和限幅值T2交叉的2個點中的負側的點設為聚焦位置F2A，將正側的點設為聚焦位置F2B。然後，根據聚焦位置F2A以及F2B，求出作為它們的平均值的聚焦位置F2C。 在S328中，判定在S326中求出的3個聚焦位置F1C、F2C以及F3C是否滿足基準。在本實施方式中，在S328中，判定將在S326中求出的聚焦位置F3C作為投影光學系統7的最佳聚焦位置是否妥當(是否採用)。具體而言，求出聚焦位置F3C和聚焦位置F1C的差分、以及聚焦位置F3C和聚焦位置F2C的差分，判定這些差分的絕對值是否為閾值以下、即是否滿足以下的式(1)以及式(2)。如果在S322中取得的近似函數是關於聚焦位置對稱的形狀，則|F1C-F3C|以及|F2C-F3C|的值變小，所以易於滿足式(1)以及式(2)。另一方面，如果在S322中取得的近似函數是關於聚焦位置非對稱的形狀，則|F1C-F3C|以及|F2C-F3C|的值變大，所以難以滿足式(1)以及式(2)。 |F1C-F3C|≤U･･･(1) |F2C-F3C|≤U･･･(2) 在式(1)以及式(2)中，U是閾值。 閾值U需要根據決定投影光學系統7的最佳聚焦位置的精度預先設定。例如，如果需要以1μm程度的精度決定投影光學系統7的最佳聚焦位置，則設定為U=1μm。 在滿足式(1)以及式(2)這兩方的情況下，認為聚焦位置F3C作為投影光學系統7的最佳聚焦位置可靠性高(接近真實值)。因此，判定為聚焦位置F1C、F2C以及F3C滿足基準，轉移到S332。 另一方面，在未滿足式(1)以及式(2)中的某一方或者兩方的情況下，聚焦位置F3C由於根據限幅值而大幅變動，所以認為作為投影光學系統7的最佳聚焦位置可靠性低(遠離真實值)。因此，判定為聚焦位置F1C、F2C以及F3C未滿足基準，轉移到S330。 在S330中，判定在S322中取得的近似函數和限幅值的交點是否為1點以下、或者、限幅值是否達到預先設定的變更範圍的界限。在限幅值過小時，在S322中取得的近似函數和限幅值的交點有時為1點以下。在S322中取得的近似函數和限幅值的交點為1點以下、或者、限幅值達到預先設定的變更範圍的界限的情況下，轉移到S320。另一方面，在S322中取得的近似函數和限幅值的交點並非1點以下、並且、限幅值未達到預先設定的變更範圍的界限的情況下，轉移到S332。 在S332中，變更限幅值T1、T2以及T3。具體而言，以使限幅值T1、T2以及T3變小的方式，分別移位元預定量。例如，限幅值T3從T3=0.90×M變更為T3=0.80×M。同樣地，限幅值T1從T1=0.95×M變更為T1=0.85×M，限幅值T2從T2=0.85×M變更為T2=0.75×M。然後，轉移到S326，再次求出3個聚焦位置F1C、F2C以及F3C。 在S334中，決定投影光學系統7的最佳聚焦位置。在本實施方式中，如上前述，判定聚焦位置F3C作為投影光學系統7的最佳聚焦位置是否妥當。因此，在轉移到S334的情況下，將在S326中求出的聚焦位置F3C決定(採用)為投影光學系統7的最佳聚焦位置。 參照圖4A、圖4B、圖5A、圖5B以及圖6，具體地說明圖3所示的決定處理的S322、S324以及S326、S328、S332以及S334。 圖4A是示出在S322中取得的、在S316中得到的測量圖案的測量值Li與測試基板的聚焦位置Fi的關係的近似函數CC的一個例子的圖。在圖4A中，縱軸表示測量圖案的測量值Li(線寬)，橫軸表示測試基板的聚焦位置Fi(從投影光學系統7的最佳聚焦位置起的散焦量)。另外，測量圖案的測量值Li以約4μm的聚焦間距得到。 圖4B是示出通過針對圖4A所示的近似函數CC設定限幅值T1、T2以及T3而求出的聚焦位置F1A、F1B、F1C、F2A、F2B、F2C、F3A、F3B以及F3C的一個例子的圖。在圖4B中，縱軸表示測量圖案的測量值Li(線寬)，橫軸表示測試基板的聚焦位置Fi(從投影光學系統7的最佳聚焦位置起的散焦量)。另外，限幅值T1成為T1=0.95×M，限幅值T2成為T2=0.85×M，限幅值T3成為T3=0.90×M。 參照圖4B，聚焦位置F1C、F2C以及F3C大致相同。因此，在S328中，例如在將閾值U設為U=1μm時，滿足式(1)以及式(2)。在該情況下，轉移到S334，將聚焦位置F3C決定為投影光學系統7的最佳聚焦位置。 圖5A是示出在S322中取得的、表示在S316中得到的測量圖案的測量值Li與測試基板的聚焦位置Fi的關係的近似函數CC’的一個例子的圖。在圖5A中，縱軸表示測量圖案的測量值Li(線寬)，橫軸表示測試基板的聚焦位置Fi(從投影光學系統7的最佳聚焦位置起的散焦量)。另外，測量圖案的測量值Li以約4μm的聚焦間距得到。 圖5B是示出通過針對圖5A所示的近似函數CC’設定限幅值T1’、T2’以及T3’而求出的聚焦位置F1A’、F1B’、F1C’、F2A’、F2B’、F2C’、F3A’、F3B’以及F3C’的一個例子的圖。在圖5B中，縱軸表示測量圖案的測量值Li(線寬)，橫軸表示測試基板的聚焦位置Fi(從投影光學系統7的最佳聚焦位置起的散焦量)。另外，限幅值T1’成為T1’=0.95×M’，限幅值T2’成為T2’=0.85×M’，限幅值T3’成為T3’=0.90×M’。M’是近似函數CC’的最大值。 參照圖5B，在聚焦位置F1C’、F2C’以及F3C’之間產生差。因此，在S328中，例如在將閾值U設為U=1μm時，不滿足式(1)以及式(2)。在該情況下，轉移到S330，進而，在轉移到S332後，對限幅值施加變更。在此，設為限幅值T1’被變更為限幅值T1’’(=0.85×M’)，限幅值T2’被變更為限幅值T2’’(=0.75×M’)，限幅值T3’被變更為限幅值T3’’(=0.80×M’)。 圖6示出針對圖5A所示的近似函數CC’設定了限幅值T1’’、T2’’以及T3’’的情況。在該情況下，求出聚焦位置F1A’’、F1B’’、F1C’’、F2A’’、F2B’’、F2C’’、F3A’’、F3B’’以及F3C’’。在圖6中，縱軸表示測量圖案的測量值Li(線寬)，橫軸表示測試基板的聚焦位置Fi(從投影光學系統7的最佳聚焦位置起的散焦量)。 參照圖6，聚焦位置F1C’’、F2C’’以及F3C’’大致相同。因此，在S328中，滿足式(1)以及式(2)。在該情況下，轉移到S334，將聚焦位置F3C’’決定為投影光學系統7的最佳聚焦位置。 這樣，在本實施方式中，定量地評價根據表示測量圖案的測量結果與聚焦位置的關係的近似函數求出的最佳聚焦位置的可靠性。因此，即使在近似函數具有非對稱的形狀的情況下，也能夠避免將與真實值的差大的聚焦位置作為投影光學系統7的最佳聚焦位置，將接近真實值的聚焦位置決定為投影光學系統7的最佳聚焦位置。換言之，在本實施方式中，相比於以往技術，能夠高精度地求出投影光學系統7的最佳聚焦位置。 另外，本實施方式中的決定投影光學系統7的最佳聚焦位置的決定處理不限定於參照圖3說明的手法，能夠採用各種手法。例如，限幅值T1、T2以及T3的設定也可以不是與近似函數的最大值的比值，而是與固定值(最佳聚焦位置的設定值等)的比值。 另外，也可以在S304至S310中，代替一邊變更測試基板的聚焦位置一邊進行曝光，而對於保持測試基板的基板平台62，一邊從XY平面傾斜一定量的方向上掃描一邊進行曝光。由此，能夠在1個鏡頭區域內一併地進行不同的聚焦位置處的曝光。 另外，返回到S302，在重新進行向測試基板的曝光的情況下，也可以不是再次轉印同一測量圖案，而轉印在與上述測量圖案相同的方向上延伸並且具有不同的線寬的測量圖案。例如，在由於顯影工藝等的主要原因而無法正確地形成與測量圖案對應的抗蝕劑圖像的情況下，通過使用具有更大的線寬的測量圖案，能夠正確地形成與測量圖案對應的抗蝕劑圖像。 另外，在S328中，在不滿足式(1)以及式(2)的至少一方的情況下，也可以不轉移到S330，而返回到S302，重新進行向測試基板的曝光。在該情況下，也可以如上前述，使用在同一方向上延伸並且具有不同的線寬的測量圖案。此外，當在同一方向上延伸並且具有不同的線寬的其他測量圖案已經轉印到測試基板的情況下，由於不需要曝光，所以轉移到S316，測量其他測量圖案的線寬即可。 另外，也可以在S328中，代替式(1)以及式(2)，而使用以下的式(3)。並且，在滿足式(3)的情況下，轉移到S332，在未滿足式(3)的情況下，轉移到S330。 |F1C-F2C|≤U･･･(3) 在使用式(3)的情況下，也可以在S334中，將聚焦位置F3C作為投影光學系統7的最佳聚焦位置，但不限定於此。換言之，還能夠將聚焦位置F3C以外的聚焦位置作為投影光學系統7的最佳聚焦位置。例如，也可以將位於聚焦位置F1C與聚焦位置F2C之間並且並非聚焦位置F3C的聚焦位置，作為投影光學系統7的最佳聚焦位置。具體而言，也可以將與聚焦位置F1C和聚焦位置F2C的中點對應的聚焦位置作為投影光學系統7的最佳聚焦位置。另外，也可以如圖7所示，求出近似函數CC和限幅值T3形成的閉合區域400的重心位置F4，將與重心位置F4對應的聚焦位置作為投影光學系統7的最佳聚焦位置。如圖7所示，閉合區域400由近似函數CC、以及連接近似函數CC和限幅值T3交叉的2個點的線段規定，通過表示重心位置F4的直線而分割成區域401和區域402。以使區域401的面積和區域402的面積相等的方式，決定重心位置F4。 另外，在圖3中，以將測量圖案轉印到測試基板的情況為例子進行了說明。但是，也可以如圖8所示，通過設置於基板平台62的感測器63，對測量圖案的像的線寬進行測量。感測器63經由投影光學系統7，對測量圖案的像進行檢測，輸出(測量)上述測量圖案的像的線寬。另外，感測器63也可以不是測量圖案的像的線寬，而是對測量圖案的像的光強度分佈圖(最大光強度)進行測量。此外，感測器63也可以與基板平台62獨立地構成。 說明曝光裝置100中的曝光處理(曝光方法)。首先，通過上述決定方法，決定投影光學系統7的最佳聚焦位置。接下來，根據投影光學系統7的最佳聚焦位置，調整曝光裝置100的各部分。具體而言，以使投影光學系統7的最佳聚焦位置和基板61的表面位置一致的方式，調整曝光裝置100的各部分。上述調整包括調整基板平台62的位置及姿勢的至少1個、以及調整包含於投影光學系統7的光學元件的位置、姿勢及面形狀的至少1個的至少一方。然後，在使投影光學系統7的最佳聚焦位置和基板61的表面位置一致的狀態下，經由投影光學系統7對基板61進行曝光而將掩模21的圖案轉印到基板61。這樣，在曝光裝置100中，能夠在使投影光學系統7的最佳聚焦位置和基板61的表面位置一致的狀態下進行曝光，所以能夠在基板上形成期望的圖案的像。 Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In addition, in each figure, the same reference number is attached|subjected to the same part, and the overlapping description is abbreviate|omitted. As one aspect of the present invention, a method of determining the optimal focus position of an optical system for imaging light from the object surface on the image surface will be described. In this embodiment, a case where the present invention is applied when determining the optimal focus position of the projection optical system for projecting the pattern of the mask used in the exposure device onto the substrate will be described as an example. Here, the best focus position of the projection optical system refers to the position where the image of the mask pattern is formed with the highest contrast. First, referring to FIG. 1, the exposure apparatus 100 will be described. FIG. 1 is a schematic diagram showing the structure of the exposure apparatus 100. The exposure apparatus 100 is a photolithography apparatus used in a photolithography process which is a manufacturing process of elements such as semiconductor elements and flat panel displays (FPD). The exposure device 100 exposes the substrate through the mask, and transfers the pattern of the mask to the substrate. As shown in FIG. 1, the exposure apparatus 100 has an illumination optical system 1, a projection optical system 7, a mask stage 22, a substrate stage 62, and a control unit 80. Here, the XYZ coordinate system is defined so that the horizontal plane is the XY plane and the vertical direction is the Z-axis direction. The exposure device 100 irradiates light emitted from a light source (not shown) to the mask 21 via the illumination optical system 1, and forms the light from the pattern of the mask 21 on the substrate 61 via the projection optical system 7. Since a resist (photosensitive agent) is applied to the substrate 61, the pattern of the mask 21 is transferred to the substrate 61 by a development process through a subsequent process. When exposing the substrate 61, the mask stage 22 holding the mask 21 and the substrate stage 62 holding the substrate 61 are simultaneously scanned in the ±Y direction. Thereby, the substrate 61 can be exposed in an area (mask pattern area) of a size larger than the projection area of the projection optical system 7. After the scanning of the mask platform 22 and the substrate platform 62 is completed, the substrate platform 62 is stepped and moved in the X direction and/or the Y direction by a certain amount to expose other lens areas of the substrate 61. After the exposure of all the lens regions of the substrate 61 is completed, the substrate 61 is carried out from the exposure apparatus 100 and a new substrate is carried in the exposure apparatus 100. In this embodiment, the projection optical system 7 is a reflective optical system including a concave mirror 3, a trapezoidal mirror 4, and a convex mirror 5. In addition, the projection optical system 7 is telecentric on both sides (object surface side and image surface side). In other words, the chief ray of the light incident on the substrate 61 from the projection optical system 7 is parallel to the Z axis on both the object surface side and the image surface side. The control unit 80 is composed of an information processing device (computer) including a CPU, a memory, etc., and controls each part of the exposure apparatus 100 in accordance with a program stored in the memory. The control unit 80 controls the operation of each part of the exposure apparatus 100 to perform exposure processing of exposing the substrate 61 and transferring the pattern of the mask 21 to the substrate 61. In addition, in the present embodiment, the control unit 80 also functions as a processing unit that performs determination processing for determining the optimal focus position of the projection optical system 7. However, the above-mentioned determination processing does not necessarily need to be performed by the control unit 80, and may be performed by an information processing device external to the exposure device 100, and the best focus position of the projection optical system 7 is obtained from the information processing device. When projecting the pattern of the mask 21 onto the substrate 61 via the projection optical system 7, it is necessary to accurately match the optimal focus position of the projection optical system 7 and the surface position of the substrate 61 (the surface on which the resist is applied). When the best focus position of the projection optical system 7 and the surface position of the substrate 61 do not match, the image of the pattern of the mask 21 formed on the substrate via the projection optical system 7 is blurred, so the desired pattern cannot be formed on the substrate. Like. Therefore, in this embodiment, before exposing the substrate 61, a determination process for determining the optimal focus position of the projection optical system 7 is performed. In the determination processing, first, while changing the optical axis direction of the test substrate with respect to the projection optical system 7, that is, the position (focus position) in the Z-axis direction, the image of the measurement pattern is projected onto the test substrate via the projection optical system 7. Then, the line width of the resist image (pattern image) corresponding to the measurement pattern formed on the test substrate through the development process is measured, and the optimal focus position of the projection optical system 7 is determined based on the measurement result. The optimal focus position of the projection optical system 7 determined in this way and the surface position of the substrate 61 are aligned, and the substrate 61 is exposed. Thereby, the image of the pattern of the mask 21 formed on the substrate via the projection optical system 7 is not blurred, and the image of the desired pattern can be formed on the substrate. In addition, the determination process of determining the optimal focus position of the projection optical system 7 is demonstrated in detail later. In addition, in the present embodiment, in the determination process, the object projected by the projection optical system 7 on the image of the measurement pattern is used as the test substrate. However, instead of the test substrate, the pattern of the mask 21 to be transferred may be used.板61。 Substrate 61. FIG. 2 is a diagram showing an example of a measurement pattern group 10 including a plurality of measurement patterns. The measurement pattern group 10 may be provided in the mask 21 or may be provided in a mask for focus measurement independent of the mask 21. The measurement pattern group 10 includes, for example, as shown in FIG. 2, four measurement patterns 101, 102, 103, and 104 whose patterns extend in different directions. The measurement patterns 101 to 104 are isolated single line patterns, which are called isolated line (isotactic) patterns. The measurement patterns 101 to 104 are used to determine the best focus positions of the projection optical system 7 for the patterns in the respective extending directions. Therefore, the optimal focus position of the projection optical system 7 may be determined according to the pattern formed in the mask 21 in which direction, and the measurement pattern used among the measurement patterns 101 to 104 may be determined. The measurement patterns 101 to 104 are designed so that when the best focus position of the projection optical system 7 and the surface position of the substrate 61 coincide, the line width of the image becomes the largest. Therefore, by measuring the line widths of the images of the measurement patterns 101 to 104 formed at various positions of the image plane side of the projection optical system 7 via the projection optical system 7 in the optical axis direction, that is, the Z-axis direction The best focus position of the projection optical system 7 is obtained. Hereinafter, with reference to FIG. 3, the process of determining the optimal focus position of the projection optical system 7 will be described in detail. In S302, the focus position of the test substrate is set as the initial focus position. Specifically, the substrate stage 62 is made to hold the test substrate coated with the resist, and the substrate stage 62 is moved so that the focus position of the test substrate becomes the initial focus position. The initial focus position is set to, for example, the lower limit position (the limit on the negative side of the Z coordinate) or the upper limit position (the limit on the positive side of the Z coordinate) of the range (movement range) in which the test substrate is moved in the Z-axis direction. In this embodiment, the initial focus position is set as the lower limit position of the movement range. In S304, the image of the measurement pattern is projected to the test substrate via the projection optical system 7, and the test substrate is exposed. Specifically, the mask stage 22 is held on the mask provided with the measurement pattern group 10 shown in FIG. 2, and an image of one of the measurement patterns 101 to 104 is formed on the test substrate via the projection optical system 7. In S306, it is determined whether the focus position of the test substrate has reached the upper limit position of the movement range. If the focus position of the test substrate has not reached the upper limit position of the movement range, the process proceeds to S308. In S308, the test substrate is moved stepwise in the Z-axis direction. Specifically, the substrate stage holding the test substrate is moved in the Z-axis direction by a predetermined step amount. In this embodiment, the initial focus position is set to the lower limit position of the movement range, so the substrate stage is moved to the positive side of the Z coordinate so that the test substrate is raised. In S302, when the initial focus position is set to the upper limit position of the movement range, the substrate stage is moved to the negative side of the Z coordinate so that the test substrate is lowered. In S310, the test substrate is moved stepwise in the X-axis direction and/or Y-axis direction. Specifically, in a manner of exposing the unexposed area of the test substrate, the substrate platform holding the test substrate is moved in the X-axis direction and/or the Y-axis direction by a predetermined step amount. In this way, until the focus position of the test substrate reaches the upper limit position of the movement range, S304 to S310 are repeated. Then, after the focus position of the test substrate reaches the upper limit position of the movement range, in S306, it shifts to S312. In S312, the test substrate is carried out from the exposure apparatus 100. In S314, the test substrate carried out from the exposure apparatus 100 is developed. In S316, a microscope is used to measure the resist image corresponding to the measurement pattern formed on the developed test substrate, that is, the line width of the measurement pattern transferred to the test substrate. The measurement value (measurement result) of the line width of the measurement pattern corresponding to the focus position Fi (i=0, 1, 2, ･･･) of the test substrate is set to Li. When the resist image is out of shape or the like and the line width of the measurement pattern cannot be measured, the measurement value Li of the line width of the measurement pattern corresponding to the focus position Fi becomes invalid. In S318, it is determined whether the number of measurement values (valid measurement values) of the measurement pattern obtained in S316 is a predetermined number or less (for example, 4 or less). When the number of measurement values of the measurement pattern is less than the predetermined number, it is deemed that there is a problem with the measurement condition, and the process proceeds to S320. In S320, it is notified that the determination processing for determining the optimal focus position of the projection optical system 7 is wrong (error notification), and the process moves to S302, from which the image of the measurement pattern is projected onto the test substrate via the projection optical system 7 and the test substrate is exposed. Do it again. On the other hand, when the number of measurement values of the measurement pattern is not less than the predetermined number, the process proceeds to S322. In S322, an approximate function representing the relationship between the measurement value Li of the measurement pattern obtained in S316 and the focus position Fi of the test substrate is obtained. Specifically, the measurement value Li of the measurement pattern obtained in S316 is used as a function of the focus position, and a function fitting using the least square method is performed. The function used in the function fitting is, for example, a fourth-order polynomial of the focus position. In addition, in the present embodiment, an approximation function is used as an example for description, but it may be a function that represents the relationship between the measurement value Li of the measurement pattern obtained in S316 and the focus position Fi of the test substrate. In S324, based on the approximate function obtained in S322, the maximum value M of the approximate function and the focus position FM corresponding to the maximum value M are obtained within a certain focus range. In S326, three limiter values T1, T2, and T3 are set for the approximate function obtained in S322, and three focus positions F1C, F2C, and F3C are obtained. The limiter values T1, T2, and T3 are limiter levels (straight lines) set so as to cross the approximate function obtained in S322. Specifically, first, the limiter value T3 (level) is set, and the focus position F3C is obtained as the midpoint of the two points where the approximate function acquired in S322 and the limiter value T3 intersect. Here, the point on the negative side of the two points where the approximation function acquired in S322 and the limiter value T3 intersect is the focus position F3A, and the point on the positive side is the focus position F3B. Then, based on the focus positions F3A and F3B, the focus position F3C, which is their average value, is obtained. It is appropriate to set the limiter value T3 to a value slightly smaller than the maximum value M of the approximate function obtained in S324. For example, using the maximum value M of the approximate function as a reference, set T3=0.90×M. However, the limit value T3 can be set to a fixed value regardless of the maximum value M of the approximation function. Next, using the limiter values T1 and T2 that are different from the limiter value T3, the focus position is similarly obtained. The limit value T1 is a value larger than the limit value T3 by a certain amount, and the limit value T2 is a value smaller than the limit value T3 by a certain amount. For example, let T1=0.95×M and T2=0.85×M. Then, the focus position F1C which is the midpoint of the two points where the approximate function acquired in S322 and the limiter value T1 intersect is obtained. Here, the point on the negative side of the two points where the approximation function obtained in S322 and the limiter value T1 intersect is the focus position F1A, and the point on the positive side is the focus position F1B. Then, based on the focus positions F1A and F1B, the focus position F1C, which is their average value, is obtained. Similarly, the focus position F2C that is the midpoint of the two points where the approximate function acquired in S322 and the limit value T2 intersect is obtained. Here, the point on the negative side of the two points where the approximation function acquired in S322 and the limiter value T2 intersect is the focus position F2A, and the point on the positive side is the focus position F2B. Then, based on the focus positions F2A and F2B, the focus position F2C, which is their average value, is obtained. In S328, it is determined whether or not the three focus positions F1C, F2C, and F3C obtained in S326 satisfy the reference. In this embodiment, in S328, it is determined whether it is appropriate to use the focus position F3C obtained in S326 as the best focus position of the projection optical system 7 (whether it is adopted or not). Specifically, the difference between the focus position F3C and the focus position F1C, and the difference between the focus position F3C and the focus position F2C are calculated, and it is determined whether the absolute value of these differences is below the threshold, that is, whether the following equations (1) and ( 2). If the approximate function obtained in S322 is a symmetrical shape with respect to the focus position, the values of |F1C-F3C| and |F2C-F3C| become smaller, so it is easy to satisfy the equations (1) and (2). On the other hand, if the approximate function obtained in S322 is an asymmetrical shape with respect to the focus position, the values of |F1C-F3C| and |F2C-F3C| become larger, so it is difficult to satisfy equations (1) and (2) . |F1C-F3C|≤U･･･(1) |F2C-F3C|≤U･･･(2) In equations (1) and (2), U is the threshold value. The threshold U needs to be set in advance according to the accuracy of determining the best focus position of the projection optical system 7. For example, if it is necessary to determine the best focus position of the projection optical system 7 with an accuracy of about 1 μm, set U=1 μm. When both equations (1) and (2) are satisfied, it is considered that the focus position F3C is highly reliable as the best focus position of the projection optical system 7 (close to the true value). Therefore, it is determined that the focus positions F1C, F2C, and F3C satisfy the reference, and the process proceeds to S332. On the other hand, when one or both of the equations (1) and (2) are not satisfied, the focus position F3C greatly changes according to the limit value, so it is considered to be the best focus of the projection optical system 7 Location reliability is low (far from the true value). Therefore, it is determined that the focus positions F1C, F2C, and F3C do not satisfy the reference, and the process proceeds to S330. In S330, it is determined whether the intersection of the approximation function acquired in S322 and the limiter value is 1 point or less, or whether the limiter value reaches the limit of the preset change range. When the limit value is too small, the intersection of the approximate function obtained in S322 and the limit value may be 1 point or less. When the intersection of the approximation function acquired in S322 and the limiter value is 1 point or less, or the limiter value reaches the limit of the preset change range, it transfers to S320. On the other hand, if the intersection of the approximate function and the limiter value acquired in S322 is not less than 1 point, and the limiter value does not reach the limit of the preset change range, the process proceeds to S332. In S332, the limiter values T1, T2, and T3 are changed. Specifically, the limiter values T1, T2, and T3 are respectively shifted by a predetermined amount. For example, the limit value T3 is changed from T3=0.90×M to T3=0.80×M. Similarly, the limit value T1 is changed from T1=0.95×M to T1=0.85×M, and the limit value T2 is changed from T2=0.85×M to T2=0.75×M. Then, the process moves to S326, and the three focus positions F1C, F2C, and F3C are calculated again. In S334, the optimal focus position of the projection optical system 7 is determined. In this embodiment, as described above, it is determined whether the focus position F3C is appropriate as the best focus position of the projection optical system 7. Therefore, when transitioning to S334, the focus position F3C obtained in S326 is determined (adopted) as the best focus position of the projection optical system 7. 4A, FIG. 4B, FIG. 5A, FIG. 5B, and FIG. 6, S322, S324, and S326, S328, S332, and S334 of the decision processing shown in FIG. 3 will be specifically described. 4A is a diagram showing an example of the approximate function CC of the relationship between the measurement value Li of the measurement pattern obtained in S322 and the focus position Fi of the test substrate obtained in S316. In FIG. 4A, the vertical axis represents the measurement value Li (line width) of the measurement pattern, and the horizontal axis represents the focus position Fi (the amount of defocus from the best focus position of the projection optical system 7) of the test substrate. In addition, the measurement value Li of the measurement pattern was obtained with a focus pitch of about 4 μm. 4B shows an example of focus positions F1A, F1B, F1C, F2A, F2B, F2C, F3A, F3B, and F3C obtained by setting limiter values T1, T2, and T3 for the approximate function CC shown in FIG. 4A Figure. In FIG. 4B, the vertical axis represents the measurement value Li (line width) of the measurement pattern, and the horizontal axis represents the focus position Fi (the amount of defocus from the best focus position of the projection optical system 7) of the test substrate. In addition, the limit value T1 becomes T1=0.95×M, the limit value T2 becomes T2=0.85×M, and the limit value T3 becomes T3=0.90×M. Referring to FIG. 4B, the focus positions F1C, F2C, and F3C are substantially the same. Therefore, in S328, when the threshold value U is set to U=1 μm, for example, equations (1) and (2) are satisfied. In this case, the process moves to S334, and the focus position F3C is determined as the best focus position of the projection optical system 7. FIG. 5A is a diagram showing an example of the approximate function CC' obtained in S322 and representing the relationship between the measured value Li of the measurement pattern obtained in S316 and the focus position Fi of the test substrate. In FIG. 5A, the vertical axis represents the measurement value Li (line width) of the measurement pattern, and the horizontal axis represents the focus position Fi (the amount of defocus from the best focus position of the projection optical system 7) of the test substrate. In addition, the measurement value Li of the measurement pattern was obtained with a focus pitch of about 4 μm. FIG. 5B shows the focus positions F1A', F1B', F1C', F2A', F2B', F2C obtained by setting limiter values T1', T2', and T3' for the approximate function CC' shown in FIG. 5A Figure of an example of', F3A', F3B', and F3C'. In FIG. 5B, the vertical axis represents the measurement value Li (line width) of the measurement pattern, and the horizontal axis represents the focus position Fi (the amount of defocus from the best focus position of the projection optical system 7) of the test substrate. In addition, the limiter value T1' becomes T1'=0.95×M', the limiter value T2' becomes T2'=0.85×M', and the limiter value T3' becomes T3'=0.90×M'. M'is the maximum value of the approximate function CC'. Referring to FIG. 5B, a difference occurs between the focus positions F1C', F2C', and F3C'. Therefore, in S328, when the threshold value U is set to U=1 μm, for example, the equations (1) and (2) are not satisfied. In this case, the process proceeds to S330, and after the process proceeds to S332, the limiter value is changed. Here, it is assumed that the limiter value T1' is changed to the limiter value T1'' (=0.85×M'), and the limiter value T2' is changed to the limiter value T2” (=0.75×M'). The amplitude T3' is changed to a limit value T3'' (=0.80×M'). Fig. 6 shows a case where limiter values T1’’, T2’’, and T3’’ are set for the approximation function CC' shown in Fig. 5A. In this case, the focus positions F1A', F1B', F1C', F2A', F2B', F2C', F3A', F3B', and F3C' are obtained. In FIG. 6, the vertical axis represents the measurement value Li (line width) of the measurement pattern, and the horizontal axis represents the focus position Fi (the amount of defocus from the best focus position of the projection optical system 7) of the test substrate. Referring to FIG. 6, the focus positions F1C', F2C', and F3C' are approximately the same. Therefore, in S328, equations (1) and (2) are satisfied. In this case, the process moves to S334, and the focus position F3C'' is determined as the best focus position of the projection optical system 7. In this way, in the present embodiment, the reliability of the optimal focus position determined from the approximate function indicating the relationship between the measurement result of the measurement pattern and the focus position is quantitatively evaluated. Therefore, even when the approximate function has an asymmetrical shape, it is possible to avoid using a focus position with a large difference from the true value as the best focus position of the projection optical system 7, and determine a focus position close to the true value as the projection optical system. The best focus position of system 7. In other words, in the present embodiment, the optimal focus position of the projection optical system 7 can be obtained with high accuracy compared with the conventional technology. In addition, the determination processing for determining the optimal focus position of the projection optical system 7 in the present embodiment is not limited to the method described with reference to FIG. 3, and various methods can be adopted. For example, the setting of the limiter values T1, T2, and T3 may not be a ratio to the maximum value of the approximation function, but a ratio to a fixed value (setting value of the best focus position, etc.). In addition, in S304 to S310, instead of performing exposure while changing the focus position of the test substrate, the substrate stage 62 holding the test substrate may be exposed while scanning in a direction inclined by a certain amount from the XY plane. As a result, it is possible to collectively perform exposures at different focus positions within one lens area. In addition, returning to S302, in the case of re-exposing to the test substrate, it is not necessary to transfer the same measurement pattern again, but to transfer the measurement pattern extending in the same direction as the above-mentioned measurement pattern and having a different line width. . For example, in the case where the resist image corresponding to the measurement pattern cannot be formed correctly due to the development process, etc., by using the measurement pattern with a larger line width, it is possible to accurately form the measurement pattern corresponding to the measurement pattern. Resist image. In addition, in S328, when at least one of formula (1) and formula (2) is not satisfied, it is not necessary to shift to S330 but to return to S302, and to perform exposure to the test substrate again. In this case, as described above, it is also possible to use measurement patterns that extend in the same direction and have different line widths. In addition, when other measurement patterns that extend in the same direction and have different line widths have been transferred to the test substrate, since exposure is not required, transfer to S316 to measure the line widths of other measurement patterns. In addition, in S328, instead of the formula (1) and the formula (2), the following formula (3) may be used. In addition, when the expression (3) is satisfied, the process proceeds to S332, and when the expression (3) is not satisfied, the process proceeds to S330. |F1C-F2C|≤U･･･(3) When formula (3) is used, the focus position F3C may be set as the optimal focus position of the projection optical system 7 in S334, but it is not limited to this. In other words, it is also possible to set a focus position other than the focus position F3C as the best focus position of the projection optical system 7. For example, a focus position that is located between the focus position F1C and the focus position F2C and is not the focus position F3C may be used as the best focus position of the projection optical system 7. Specifically, the focus position corresponding to the midpoint of the focus position F1C and the focus position F2C may be used as the best focus position of the projection optical system 7. In addition, as shown in FIG. 7, the center of gravity position F4 of the closed region 400 formed by the approximation function CC and the limit value T3 may be obtained, and the focus position corresponding to the center of gravity position F4 may be used as the optimal focus position of the projection optical system 7. As shown in FIG. 7, the closed area 400 is defined by the approximate function CC and a line segment connecting two points where the approximate function CC and the limit value T3 intersect, and is divided into an area 401 and an area 402 by a straight line indicating the center of gravity position F4. The center of gravity position F4 is determined so that the area of the area 401 and the area of the area 402 are equal. In addition, in FIG. 3, the case where the measurement pattern is transferred to the test substrate has been described as an example. However, as shown in FIG. 8, the line width of the image of the measurement pattern may be measured by the sensor 63 provided on the substrate stage 62. The sensor 63 detects the image of the measurement pattern via the projection optical system 7, and outputs (measures) the line width of the image of the measurement pattern. In addition, the sensor 63 may not measure the line width of the image of the pattern, but may measure the light intensity distribution map (maximum light intensity) of the image of the measurement pattern. In addition, the sensor 63 may also be configured independently of the substrate platform 62. The exposure process (exposure method) in the exposure apparatus 100 will be described. First, the optimal focus position of the projection optical system 7 is determined by the above-mentioned determination method. Next, according to the best focus position of the projection optical system 7, each part of the exposure apparatus 100 is adjusted. Specifically, each part of the exposure apparatus 100 is adjusted so that the best focus position of the projection optical system 7 and the surface position of the substrate 61 coincide. The above-mentioned adjustment includes adjusting at least one of the position and posture of the substrate stage 62 and adjusting at least one of the position, posture, and surface shape of the optical element included in the projection optical system 7. Then, in a state where the best focus position of the projection optical system 7 and the surface position of the substrate 61 are aligned, the substrate 61 is exposed via the projection optical system 7 to transfer the pattern of the mask 21 to the substrate 61. In this way, in the exposure apparatus 100, it is possible to perform exposure in a state where the best focus position of the projection optical system 7 and the surface position of the substrate 61 are aligned, so that an image of a desired pattern can be formed on the substrate.

本發明的實施方式中的物品的製造方法例如適合於製造元件(半導體元件、磁記憶媒體、液晶顯示元件等)、濾光片、光學零件、MEMS等物品。上述製造方法包括：使用曝光裝置100，通過上述實施方式的曝光方法，對塗敷有感光劑的基板進行曝光的工程；以及使曝光的感光劑顯影的工程。另外，將顯影的感光劑的圖案作為掩模，針對基板進行蝕刻工程、離子注入工程等，在基板上形成電路圖案。反復這些曝光、顯影、蝕刻等工程，在基板上形成由複數個層構成的電路圖案。在後工程中，針對形成有電路圖案的基板進行切割(加工)，進行晶片的固定、鍵合、檢查工程。另外，上述製造方法能夠包括其他公知的工程(氧化、成膜、蒸鍍、摻雜、平坦化、抗蝕劑剝離等)。本實施方式中的物品的製造方法相比於以往，在物品的性能、品質、生產率以及生產成本的至少1個方面上更有利。 The manufacturing method of the article in the embodiment of the present invention is suitable for manufacturing devices (semiconductor devices, magnetic memory media, liquid crystal display devices, etc.), filters, optical parts, MEMS and other articles, for example. The above-mentioned manufacturing method includes: a process of exposing a substrate coated with a photosensitive agent by the exposure method of the above-mentioned embodiment using the exposure device 100; and a process of developing the exposed photosensitive agent. In addition, using the developed photosensitive agent pattern as a mask, an etching process, an ion implantation process, and the like are performed on the substrate to form a circuit pattern on the substrate. These processes of exposure, development, and etching are repeated to form a circuit pattern composed of a plurality of layers on the substrate. In the post process, the substrate on which the circuit pattern is formed is cut (processed), and the wafer is fixed, bonded, and inspected. In addition, the above-mentioned manufacturing method can include other well-known processes (oxidation, film formation, vapor deposition, doping, planarization, resist stripping, etc.). The method of manufacturing an article in the present embodiment is more advantageous in at least one aspect of the performance, quality, productivity, and production cost of the article than in the past.

本發明還能夠利用如下處理來實現：將實現上述實施方式的1個以上的功能的程式經由網路或者記憶媒體供給到系統或者裝置，該系統或者裝置的電腦中的1個以上的處理器讀出並執行程式。另外，還能夠通過實現1個以上的功能的電路(例如ASIC)來實現。 The present invention can also be realized by the following processing: a program that realizes one or more functions of the above-mentioned embodiment is supplied to a system or device via a network or a storage medium, and one or more processors in the computer of the system or device are read Exit and execute the program. In addition, it can also be realized by a circuit (for example, ASIC) that realizes one or more functions.

其它實施例 Other embodiments

本發明的實施例還可以通過如下的方法來實現，即，通過網路或者各種記憶媒體將執行上述實施例的功能的軟體(程式)提供給系統或裝置，該系統或裝置的電腦或是中央處理單元(CPU)、微處理單元(MPU)讀出並執行程式的方法。 The embodiments of the present invention can also be implemented by the following method, that is, software (programs) that perform the functions of the above-mentioned embodiments are provided to a system or device through a network or various storage media, and the computer or the center of the system or device The processing unit (CPU) and the micro processing unit (MPU) read and execute the program.

以上，說明了本發明的優選的實施方式，但本發明不限定於這些實施方式，能夠在其要旨的範圍內進行各種變形以及變更。 The preferred embodiments of the present invention have been described above, but the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist.

1:照明光學系統 1: Illumination optical system

3:凹面反射鏡 3: Concave mirror

4:梯形反射鏡 4: Trapezoidal mirror

5:凸面反射鏡 5: Convex mirror

7:投影光學系統 7: Projection optical system

10:測量圖案群 10: Measurement pattern group

21:掩模 21: Mask

22:掩模平台 22: Mask platform

61:基板 61: substrate

62:基板平台 62: substrate platform

63:感測器 63: Sensor

80:控制部 80: Control Department

100:曝光裝置 100: Exposure device

101:測量圖案 101: Measuring pattern

102:測量圖案 102: Measuring pattern

103:測量圖案 103: Measuring pattern

104:測量圖案 104: Measuring pattern

400:閉合區域 400: closed area

401:區域 401: area

402:區域 402: area

Fi:聚焦位置 Fi: focus position

FM:聚焦位置 FM: Focus position

F1A:聚焦位置 F1A: Focus position

F1B:聚焦位置 F1B: Focus position

F1C:聚焦位置 F1C: Focus position

F2A:聚焦位置 F2A: Focus position

F2B:聚焦位置 F2B: Focus position

F2C:聚焦位置 F2C: Focus position

F3A:聚焦位置 F3A: Focus position

F3B:聚焦位置 F3B: Focus position

F3C:聚焦位置 F3C: Focus position

F1A’:聚焦位置 F1A’: Focus position

F1B’:聚焦位置 F1B’: Focus position

F1C’:聚焦位置 F1C’: Focus position

F2A’:聚焦位置 F2A’: Focus position

F2B’:聚焦位置 F2B’: Focus position

F2C’:聚焦位置 F2C’: Focus position

F3A’:聚焦位置 F3A’: Focus position

F3B’:聚焦位置 F3B’: Focus position

F3C’:聚焦位置 F3C’: Focus position

F1A”:聚焦位置 F1A”: Focus position

F1B”:聚焦位置 F1B": focus position

F1C”:聚焦位置 F1C": Focus position

F2A”:聚焦位置 F2A": focus position

F2B”:聚焦位置 F2B": focus position

F2C”:聚焦位置 F2C": focus position

F3A”:聚焦位置 F3A”: Focus position

F3B”:聚焦位置 F3B": focus position

F3C”:聚焦位置 F3C": Focus position

F4:重心位置 F4: Center of gravity position

圖1是示出曝光裝置的結構的概略圖。 圖2是示出測量圖案的一個例子的圖。 圖3是用於說明決定投影光學系統的最佳聚焦位置的決定處理的流程圖。 圖4A以及圖4B是用於具體地說明圖3所示的決定處理的S322、S324以及S326、S328、S332以及S334的圖。 圖5A以及圖5B是用於具體地說明圖3所示的決定處理的S322、S324以及S326、S328、S332以及S334的圖。 圖6是用於具體地說明圖3所示的決定處理的S322、S324以及S326、S328、S332以及S334的圖。 圖7是用於說明決定投影光學系統的最佳聚焦位置的決定處理的圖。 圖8是示出曝光裝置的結構的概略圖。FIG. 1 is a schematic diagram showing the structure of an exposure apparatus. Fig. 2 is a diagram showing an example of a measurement pattern. FIG. 3 is a flowchart for explaining the determination process for determining the optimal focus position of the projection optical system. 4A and 4B are diagrams for specifically explaining S322, S324, and S326, S328, S332, and S334 of the determination processing shown in FIG. 3. 5A and 5B are diagrams for specifically explaining S322, S324, and S326, S328, S332, and S334 of the determination processing shown in FIG. 3. Fig. 6 is a diagram for specifically explaining S322, S324, and S326, S328, S332, and S334 of the determination processing shown in Fig. 3. FIG. 7 is a diagram for explaining the determination processing for determining the optimal focus position of the projection optical system. Fig. 8 is a schematic diagram showing the structure of an exposure apparatus.

Claims (23)

一種決定方法，係決定將掩模的圖案投影到基板的投影光學系統的最佳聚焦位置，其特徵係，具有：第1工程，取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的近似函數；第2工程，求出成為前述近似函數和第1水準交叉的2個點的中點的第1聚焦位置；第3工程，求出成為前述近似函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置；第4工程，求出成為前述近似函數和前述第1水準與前述第2水準之間的第3水準交叉的2個點的中點的第3聚焦位置；以及第5工程，根據前述第3聚焦位置、前述第1聚焦位置與前述第3聚焦位置的第1差分、及前述第2聚焦位置與前述第3聚焦位置的第2差分，決定前述最佳聚焦位置。 A method of determining is to determine the best focus position of the projection optical system that projects the pattern of the mask on the substrate. It is characterized by: The first step is to obtain the image plane of the projection optical system through the projection optical system. The measurement result of the first measurement pattern transferred at plural positions in the optical axis direction on the side of the optical axis, and the approximate function of the relationship between the positions of the aforementioned plural positions; the second step is to obtain the aforementioned approximate function and the first level The first focus position of the midpoint of the two intersecting points; the third step is to find the second focus position of the midpoint of the two points intersecting the approximate function and the second level that is different from the first level; Step 4, find the third focus position that is the midpoint of the two points where the approximation function intersects the third level between the first level and the second level; and the fifth step is based on the third focus position. , The first difference between the first focus position and the third focus position and the second difference between the second focus position and the third focus position determine the best focus position. 如申請專利範圍第1項的決定方法，其中，前述第3水準是前述第1水準和前述第2水準的中點。 Such as the method for determining the scope of the patent application, wherein the third level is the midpoint of the first level and the second level. 如申請專利範圍第1項的決定方法，其中，在前述第5工程中，在前述第1差分以及前述第2差分 是閾值以下的情況下，將前述第3聚焦位置作為前述最佳聚焦位置。 Such as the method for determining the scope of the patent application, in which, in the fifth step, the first difference and the second difference When it is below the threshold value, the third focus position is set as the best focus position. 如申請專利範圍第1項前述的決定方法，其中，前述第5工程在前述第1差分及前述第2差分大於閾值的情況下，包括：求出成為前述近似函數和使前述第1水平移位預定量而得到的第4水準交叉的2個點的中點的第4聚焦位置的工程；求出成為前述近似函數和使前述第2水平移位前述預定量而得到的第5水準交叉的2個點的中點的第5聚焦位置的工程；求出成為前述近似函數和使前述第3水平移位前述預定量而得到的第6水準交叉的2個點的中點的第6聚焦位置的工程；以及根據前述第6聚焦位置、前述第4聚焦位置和前述第6聚焦位置的差分、及前述第5聚焦位置和前述第6聚焦位置的差分，決定前述最佳聚焦位置的工程。 Such as the determination method described in the first item of the scope of patent application, wherein the fifth step includes obtaining the approximate function and shifting the first level when the first difference and the second difference are greater than a threshold value. The process of the fourth focus position at the midpoint of the two points at the intersection of the fourth level obtained by a predetermined amount; find the 2 that becomes the approximation function and the intersection of the fifth level obtained by shifting the second level by the predetermined amount The process of the fifth focus position of the midpoint of the two points; finding the sixth focus position of the midpoint of the two points intersected by the sixth level obtained by shifting the third level by the aforementioned approximate function and the aforementioned predetermined amount Process; and the process of determining the best focus position based on the sixth focus position, the difference between the fourth focus position and the sixth focus position, and the difference between the fifth focus position and the sixth focus position. 如申請專利範圍第1項的決定方法，其中，前述第5工程在前述第1差分及前述第2差分大於閾值的情況下，包括：取得表示經由前述投影光學系統再次在前述複數個位置的各個位置被轉印的前述第1測量圖案的測量結果、與 前述複數個位置的各個位置的關係的新的近似函數的工程；求出成為前述新的近似函數和前述第1水準交叉的2個點的中點的第7聚焦位置的工程；求出成為前述新的近似函數和前述第2水準交叉的2個點的中點的第8聚焦位置的工程；求出成為前述新的近似函數和前述第3水準交叉的2個點的中點的第9聚焦位置的工程；以及根據前述第9聚焦位置、前述第7聚焦位置和前述第9聚焦位置的差分、及前述第8聚焦位置和前述第9聚焦位置的差分，決定前述最佳聚焦位置的工程。 For example, the method for determining the scope of the patent application, wherein the fifth step, when the first difference and the second difference are greater than a threshold value, includes: obtaining each of the plurality of positions indicated by the projection optical system again The measurement result of the aforementioned first measurement pattern whose position is transferred, and The process of a new approximation function of the relationship between the positions of the aforementioned plural positions; the process of finding the seventh focus position that is the midpoint of the two points where the aforementioned new approximation function and the aforementioned first level intersect; the process of finding the aforementioned The process of the 8th focus position of the midpoint of the two points where the new approximation function intersects the second level; finds the 9th focus that is the midpoint of the two points where the new approximation function intersects the third level And the process of determining the best focus position based on the ninth focus position, the difference between the seventh focus position and the ninth focus position, and the difference between the eighth focus position and the ninth focus position. 如申請專利範圍第1項的決定方法，其中，前述第5工程在前述第1差分及前述第2差分大於閾值的情況下，包括：取得表示經由前述投影光學系統在前述複數個位置的各個位置被轉印的、在與前述第1測量圖案相同的方向上延伸、且具有與前述第1測量圖案的線寬不同的線寬的第2測量圖案的測量結果、與前述複數個位置的各個位置的關係的新的近似函數的工程；求出成為前述新的近似函數和前述第1水準交叉的2個點的中點的第10聚焦位置的工程；求出成為前述新的近似函數和前述第2水準交叉的2個點的中點的第11聚焦位置的工程； 求出成為前述新的近似函數和前述第3水準交叉的2個點的中點的第12聚焦位置的工程；以及根據前述第12聚焦位置、前述第10聚焦位置和前述第12聚焦位置的差分、及前述第11聚焦位置和前述第12聚焦位置的差分，決定前述最佳聚焦位置的工程。 For example, the method for determining the scope of the patent application, wherein the fifth step includes obtaining each position representing the plurality of positions through the projection optical system when the first difference and the second difference are greater than a threshold value The measurement result of the transferred second measurement pattern that extends in the same direction as the first measurement pattern and has a line width different from the line width of the first measurement pattern, and each of the multiple positions described above The process of obtaining the tenth focus position that is the midpoint of the two points where the new approximation function intersects the first level; obtaining the new approximation function and the first 2 The project of the 11th focus position of the midpoint of the 2 points where the level crosses; The process of obtaining the 12th focus position that is the midpoint of the two points where the new approximation function intersects the third level; and based on the difference between the 12th focus position, the 10th focus position, and the 12th focus position And the difference between the eleventh focus position and the twelfth focus position to determine the best focus position. 如申請專利範圍第6項的決定方法，其中，前述第5工程包括經由前述投影光學系統在前述複數個位置的各個位置轉印前述第2測量圖案的工程。 Such as the method for determining the scope of the patent application, wherein the fifth step includes a step of transferring the second measurement pattern at each of the plurality of positions via the projection optical system. 如申請專利範圍第1項的決定方法，其中，前述測量結果包括在前述複數個位置的各個位置被轉印的前述第1測量圖案的線寬或者前述第1測量圖案的光強度分佈圖。 Such as the determination method of the first item of the patent application, wherein the measurement result includes the line width of the first measurement pattern or the light intensity distribution map of the first measurement pattern transferred at each of the plurality of positions. 一種決定方法，係決定將掩模的圖案投影到基板的投影光學系統的最佳聚焦位置，其特徵係，具有：第1工程，取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的近似函數；第2工程，求出成為前述近似函數和第1水準交叉的2個點的中點的第1聚焦位置；第3工程，求出成為前述近似函數和與前述第1水準不 同的第2水準交叉的2個點的中點的第2聚焦位置；以及第4工程，根據前述第1聚焦位置與前述第2聚焦位置的差分，決定前述最佳聚焦位置。 A method of determining is to determine the best focus position of the projection optical system that projects the pattern of the mask on the substrate. It is characterized by: The first step is to obtain the image plane of the projection optical system through the projection optical system. The measurement result of the first measurement pattern transferred at plural positions in the optical axis direction on the side of the optical axis, and the approximate function of the relationship between the positions of the aforementioned plural positions; the second step is to obtain the aforementioned approximate function and the first level The first focus position at the midpoint of the two intersecting points; the third step is to obtain the aforementioned approximate function and the difference between the aforementioned approximate function and the aforementioned first level. The second focus position at the midpoint of the two points where the same second level intersects; and the fourth step determines the best focus position based on the difference between the first focus position and the second focus position. 如申請專利範圍第9項的決定方法，其中，在前述第4工程中，在前述差分是閾值以下的情況下，將前述第1聚焦位置與前述第2聚焦位置之間的第3聚焦位置作為前述最佳聚焦位置。 Such as the determination method of claim 9, wherein, in the fourth step, in the case where the difference is less than the threshold value, the third focus position between the first focus position and the second focus position is taken as The aforementioned best focus position. 如申請專利範圍第10項的決定方法，其中，前述第3聚焦位置是前述第1聚焦位置和前述第2聚焦位置的中點。 Such as the determination method of the tenth patent application, wherein the third focus position is the midpoint of the first focus position and the second focus position. 如申請專利範圍第10項的決定方法，其中，前述第3聚焦位置是由前述近似函數、以及連接前述近似函數和第3水準交叉的2個點的線段規定的閉合區域的重心位置，前述第3水準是前述第1水準與前述第2水準之間的水準。 For example, in the method of determining item 10 of the scope of patent application, the third focus position is the center of gravity of the closed area defined by the approximate function and the line segment connecting the two points where the approximate function and the third level intersect. Level 3 is the level between the aforementioned first level and the aforementioned second level. 如申請專利範圍第9項的決定方法，其中，前述測量結果包括在前述複數個位置的各個位置被轉印的前述第1測量圖案的線寬或者前述第1測量圖案的光強度分佈圖。 Such as the determination method of item 9 of the scope of patent application, wherein the measurement result includes the line width of the first measurement pattern transferred at each of the plurality of positions or the light intensity distribution map of the first measurement pattern. 一種曝光方法，係使用具有將掩模的圖案投影到基板的投影光學系統的曝光裝置，對前述基板進行曝光，其特徵係，具有：第1工程，決定前述投影光學系統的最佳聚焦位置；第2工程，根據在前述第1工程中決定的最佳聚焦位置，調整前述曝光裝置；以及第3工程，使用在前述第2工程中調整後的前述曝光裝置，對前述基板進行曝光，前述第1工程包括：取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的近似函數的工程；求出成為前述近似函數和第1水準交叉的2個點的中點的第1聚焦位置的工程；求出成為前述近似函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置的工程；求出成為前述近似函數和前述第1水準與前述第2水準之間的第3水準交叉的2個點的中點的第3聚焦位置的工程；以及根據前述第3聚焦位置、前述第1聚焦位置與前述第3聚焦位置的第1差分、及前述第2聚焦位置與前述第3聚焦位置的第2差分，決定前述最佳聚焦位置的工程。 An exposure method that uses an exposure device having a projection optical system that projects a pattern of a mask onto a substrate to expose the aforementioned substrate, and its feature is: the first step is to determine the best focus position of the aforementioned projection optical system; The second step is to adjust the exposure device based on the best focus position determined in the first step; and the third step is to expose the substrate using the exposure device adjusted in the second step. 1 The process includes: obtaining a measurement result representing the first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and each position of the plurality of positions The process of the approximate function of the relationship; the process of finding the first focus position that becomes the midpoint of the two points where the above-mentioned approximate function and the first level intersect; the process of finding the above-mentioned approximate function and the second that is different from the first level The process of the second focus position of the midpoint of the two points where the levels intersect; find the third that becomes the midpoint of the two points where the approximation function intersects with the third level between the first level and the second level The process of the focus position; and based on the third focus position, the first difference between the first focus position and the third focus position, and the second difference between the second focus position and the third focus position to determine the optimum The focus position works. 如申請專利範圍第14項的曝光方法，其中，前述第2工程包括調整保持前述基板的基板平台的位置及姿勢的至少1個的工程、以及調整包含於前述投影光學系統的光學元件的位置、姿勢及面形狀的至少1個的工程的至少一方。 Such as the exposure method of claim 14, wherein the second step includes adjusting at least one of the position and posture of the substrate platform holding the substrate, and adjusting the position of the optical element included in the projection optical system, At least one of the process of at least one of posture and face shape. 一種曝光方法，係使用具有將掩模的圖案投影到基板的投影光學系統的曝光裝置，對前述基板進行曝光，其特徵係，具有：第1工程，決定前述投影光學系統的最佳聚焦位置；第2工程，根據在前述第1工程中決定的最佳聚焦位置，調整前述曝光裝置；以及第3工程，使用在前述第2工程中調整後的前述曝光裝置，對前述基板進行曝光，前述第1工程包括：取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的近似函數的工程；求出成為前述近似函數和第1水準交叉的2個點的中點的第1聚焦位置的工程；求出成為前述近似函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置的工程；以及 根據前述第1聚焦位置與前述第2聚焦位置的差分，決定前述最佳聚焦位置的工程。 An exposure method that uses an exposure device having a projection optical system that projects a pattern of a mask onto a substrate to expose the aforementioned substrate, and its feature is: the first step is to determine the best focus position of the aforementioned projection optical system; The second step is to adjust the exposure device based on the best focus position determined in the first step; and the third step is to expose the substrate using the exposure device adjusted in the second step. 1 The process includes: obtaining a measurement result representing the first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and each position of the plurality of positions The process of the approximate function of the relationship; the process of finding the first focus position that becomes the midpoint of the two points where the above-mentioned approximate function and the first level intersect; the process of finding the above-mentioned approximate function and the second that is different from the first level The construction of the second focus position at the midpoint of the two points where the level intersects; and The process of determining the best focus position based on the difference between the first focus position and the second focus position. 如申請專利範圍第16項的曝光方法，其中，前述第2工程包括調整保持前述基板的基板平台的位置及姿勢的至少1個的工程、以及調整包含於前述投影光學系統的光學元件的位置、姿勢及面形狀的至少1個的工程的至少一方。 Such as the exposure method of claim 16, wherein the second step includes adjusting at least one of the position and posture of the substrate platform holding the substrate, and adjusting the position of the optical element included in the projection optical system, At least one of the process of at least one of posture and face shape. 一種曝光裝置，係對基板進行曝光，其特徵係，具有：投影光學系統，將掩模的圖案投影到前述基板；以及處理部，進行決定前述投影光學系統的最佳聚焦位置的處理，前述處理部取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的近似函數，求出成為前述近似函數和第1水準交叉的2個點的中點的第1聚焦位置，求出成為前述近似函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置，求出成為前述近似函數和前述第1水準與前述第2水準 之間的第3水準交叉的2個點的中點的第3聚焦位置，根據前述第3聚焦位置、前述第1聚焦位置與前述第3聚焦位置的第1差分、及前述第2聚焦位置與前述第3聚焦位置的第2差分，決定前述最佳聚焦位置。 An exposure device for exposing a substrate, characterized by: a projection optical system that projects a pattern of a mask onto the substrate; and a processing unit that performs processing for determining the best focus position of the projection optical system, the processing The section acquires the measurement results of the first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and the relationship with each position of the plurality of positions Approximate function, find the first focus position that becomes the midpoint of the two points where the above approximation function and the first level intersect, and find the two points where the above approximation function intersects with the second level different from the first level The second focus position at the midpoint is calculated as the aforementioned approximate function, the aforementioned first level and the aforementioned second level The third focus position at the midpoint of the two points where the third level intersects is based on the third focus position, the first difference between the first focus position and the third focus position, and the second focus position and The second difference of the third focus position determines the best focus position. 一種曝光裝置，係對基板進行曝光，其特徵係，具有：投影光學系統，將掩模的圖案投影到前述基板；以及處理部，進行決定前述投影光學系統的最佳聚焦位置的處理，前述處理部取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的近似函數，求出成為前述近似函數和第1水準交叉的2個點的中點的第1聚焦位置，求出成為前述近似函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置，根據前述第1聚焦位置與前述第2聚焦位置的差分，決定前述最佳聚焦位置。 An exposure device for exposing a substrate, characterized by: a projection optical system that projects a pattern of a mask onto the substrate; and a processing unit that performs processing for determining the best focus position of the projection optical system, the processing The section acquires the measurement results of the first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and the relationship with each position of the plurality of positions Approximate function, find the first focus position that becomes the midpoint of the two points where the above approximation function and the first level intersect, and find the two points where the above approximation function intersects with the second level different from the first level The second focus position at the midpoint determines the best focus position based on the difference between the first focus position and the second focus position. 一種物品的製造方法，其特徵係，具有：使用曝光方法，對塗敷於基板的感光劑進行曝光的工 程；使被曝光的前述感光劑顯影而形成前述感光劑的圖案的工程；以及通過根據顯影的前述感光劑的圖案，將圖案形成於前述基板並對形成有圖案的基板進行加工，從而製造物品的工程，前述曝光方法是使用具有將掩模的圖案投影到前述基板的投影光學系統的曝光裝置，對前述基板進行曝光的曝光方法，前述曝光方法具有：第1工程，決定前述投影光學系統的最佳聚焦位置；第2工程，根據在前述第1工程中決定的最佳聚焦位置，調整前述曝光裝置；以及第3工程，使用在前述第2工程中調整後的前述曝光裝置，對前述基板進行曝光，前述第1工程包括：取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的近似函數的工程；求出成為前述近似函數和第1水準交叉的2個點的中點的第1聚焦位置的工程；求出成為前述近似函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置的工程； 求出成為前述近似函數和前述第1水準與前述第2水準之間的第3水準交叉的2個點的中點的第3聚焦位置的工程；以及根據前述第3聚焦位置、前述第1聚焦位置與前述第3聚焦位置的第1差分、及前述第2聚焦位置與前述第3聚焦位置的第2差分，決定前述最佳聚焦位置的工程。 A method of manufacturing an article, which is characterized by: using an exposure method to expose a photosensitive agent applied on a substrate Process; the process of developing the exposed photosensitive agent to form the pattern of the photosensitive agent; and forming the pattern on the substrate according to the pattern of the developed photosensitive agent and processing the patterned substrate, thereby manufacturing an article The aforementioned exposure method is an exposure method for exposing the aforementioned substrate using an exposure device having a projection optical system that projects the pattern of the mask onto the aforementioned substrate. The aforementioned exposure method has: the first step, determining the degree of the aforementioned projection optical system The best focus position; the second step, the exposure device is adjusted based on the best focus position determined in the first step; and the third step, the exposure device adjusted in the second step is used for the substrate Exposure is performed, and the first step includes: obtaining a measurement result representing a first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and the plurality of The process of approximating the function of the relationship between the positions of each position; the process of finding the first focus position that is the midpoint of the two points where the aforementioned approximation function and the first level intersect; the process of finding the approximation function and the first The construction of the second focus position at the midpoint of the two points where the second levels of different levels intersect; The process of obtaining a third focus position that is the midpoint of the two points where the approximation function intersects the third level between the first level and the second level; and based on the third focus position and the first focus The first difference between the position and the third focus position and the second difference between the second focus position and the third focus position determine the process of the best focus position. 一種物品的製造方法，其特徵係，具有：使用曝光方法，對塗敷於基板的感光劑進行曝光的工程；使被曝光的前述感光劑顯影而形成前述感光劑的圖案的工程；以及通過根據顯影的前述感光劑的圖案，將圖案形成於前述基板並對形成有圖案的基板進行加工，從而製造物品的工程，前述曝光方法是使用具有將掩模的圖案投影到前述基板的投影光學系統的曝光裝置，對前述基板進行曝光的曝光方法，前述曝光方法具有：第1工程，決定前述投影光學系統的最佳聚焦位置；第2工程，根據在前述第1工程中決定的最佳聚焦位置，調整前述曝光裝置；以及第3工程，使用在前述第2工程中調整後的前述曝光裝置，對前述基板進行曝光， 前述第1工程包括：取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的近似函數的工程；求出成為前述近似函數和第1水準交叉的2個點的中點的第1聚焦位置的工程；求出成為前述近似函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置的工程；以及根據前述第1聚焦位置與前述第2聚焦位置的差分，決定前述最佳聚焦位置的工程。 A method of manufacturing an article, characterized by comprising: a process of exposing a photosensitive agent applied to a substrate using an exposure method; a process of developing the exposed photosensitive agent to form a pattern of the photosensitive agent; and The developed pattern of the aforementioned photosensitive agent, the pattern is formed on the aforementioned substrate and the pattern-formed substrate is processed to produce the process of the article. The aforementioned exposure method uses a projection optical system with a projection optical system that projects the pattern of the mask onto the aforementioned substrate. The exposure device is an exposure method for exposing the substrate. The exposure method includes: a first step, determining the best focus position of the projection optical system; a second step, based on the best focus position determined in the first step, Adjusting the aforementioned exposure device; and the third step, using the aforementioned exposure device adjusted in the aforementioned second step to expose the aforementioned substrate, The first step includes: obtaining a measurement result representing a first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and the measurement results of the plurality of positions The process of the approximate function of the relationship between each position; the process of finding the first focus position that is the midpoint of the two points where the aforementioned approximate function and the first level intersect; the process of finding the aforementioned approximate function and the difference from the aforementioned first level The process of the second focus position at the midpoint of the two points where the second level intersects; and the process of determining the best focus position based on the difference between the first focus position and the second focus position. 一種記憶媒體，係存儲有用於使電腦執行決定將掩模的圖案投影到基板的投影光學系統的最佳聚焦位置的決定方法的各工程的程式，其特徵係，前述決定方法具有：第1工程，取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的近似函數；第2工程，求出成為前述近似函數和第1水準交叉的2個點的中點的第1聚焦位置；第3工程，求出成為前述近似函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置； 第4工程，求出成為前述近似函數和前述第1水準與前述第2水準之間的第3水準交叉的2個點的中點的第3聚焦位置；以及第5工程，根據前述第3聚焦位置、前述第1聚焦位置與前述第3聚焦位置的第1差分、及前述第2聚焦位置與前述第3聚焦位置的第2差分，決定前述最佳聚焦位置。 A memory medium storing programs for each process for making a computer execute a method for determining the optimal focus position of a projection optical system for projecting a pattern of a mask on a substrate, and the feature is that the foregoing determination method has: the first process , To obtain a measurement result representing the first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and the relationship with each of the plurality of positions Approximation function; the second step is to find the first focus position that becomes the midpoint of the two points where the aforementioned approximation function and the first level intersect; the third step is to find the aforementioned approximate function and the first level that is different from the aforementioned first level The second focus position of the midpoint of the 2 points where the 2 levels cross; The fourth step is to find the third focus position that is the midpoint of the two points where the aforementioned approximate function and the third level between the aforementioned first level and the aforementioned second level intersect; and the fifth step, based on the aforementioned third focus The position, the first difference between the first focus position and the third focus position, and the second difference between the second focus position and the third focus position determine the best focus position. 一種記憶媒體，係存儲有用於使電腦執行決定將掩模的圖案投影到基板的投影光學系統的最佳聚焦位置的決定方法的各工程的程式，其特徵係，前述決定方法具有：第1工程，取得表示經由前述投影光學系統分別在前述投影光學系統的像面側的光軸方向的複數個位置處被轉印的第1測量圖案的測量結果、與前述複數個位置的各個位置的關係的近似函數；第2工程，求出成為前述近似函數和第1水準交叉的2個點的中點的第1聚焦位置；第3工程，求出成為前述近似函數和與前述第1水準不同的第2水準交叉的2個點的中點的第2聚焦位置；以及第4工程，根據前述第1聚焦位置與前述第2聚焦位置的差分，決定前述最佳聚焦位置。 A memory medium storing programs for each process for making a computer execute a method for determining the optimal focus position of a projection optical system for projecting a pattern of a mask on a substrate, and the feature is that the foregoing determination method has: the first process , To obtain a measurement result representing the first measurement pattern transferred at a plurality of positions in the optical axis direction on the image plane side of the projection optical system via the projection optical system, and the relationship with each of the plurality of positions Approximation function; the second step is to find the first focus position that becomes the midpoint of the two points where the aforementioned approximation function and the first level intersect; the third step is to find the aforementioned approximate function and the first level that is different from the aforementioned first level The second focus position at the midpoint of the two points where the two levels intersect; and the fourth step determines the best focus position based on the difference between the first focus position and the second focus position.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210033557A1 (en) * 2019-07-30 2021-02-04 Applied Materials, Inc. Differential capacitive sensors for in-situ film thickness and dielectric constant measurement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080049203A1 (en) * 2006-08-28 2008-02-28 Canon Kabushiki Kaisha Exposure apparatus
US20090077528A1 (en) * 2003-07-02 2009-03-19 Kabushiki Kaisha Toshiba Pattern correction method, pattern correction system, mask manufacturing method, semiconductor device manufacturing method, recording medium, and designed pattern
TW201019041A (en) * 2008-09-25 2010-05-16 Zeiss Carl Smt Ag Projection exposure apparatus with optimized adjustment possibility
TWI396225B (en) * 2004-07-23 2013-05-11 尼康股份有限公司 Image surface measuring method, exposuring method, device manufacturing method, and exposuring device
TW201600940A (en) * 2006-02-21 2016-01-01 尼康股份有限公司 Exposure apparatus, exposure method and device manufacturing method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3265668B2 (en) * 1993-01-13 2002-03-11 株式会社ニコン How to calculate the best focus position
JP3303436B2 (en) * 1993-05-14 2002-07-22 キヤノン株式会社 Projection exposure apparatus and method for manufacturing semiconductor element
JPH07326563A (en) * 1994-06-01 1995-12-12 Hitachi Ltd Exposure condition evaluating pattern, and method and system for evaluating exposure condition using the same
JPH0982620A (en) * 1995-09-20 1997-03-28 Nikon Corp Method for detection of best focus position
JPWO2002029870A1 (en) * 2000-10-05 2004-02-19 株式会社ニコン Exposure condition determination method, exposure method, device manufacturing method, and recording medium
JP2002260986A (en) * 2001-03-02 2002-09-13 Nikon Corp Method of measuring optical characteristic, method for exposure, and method of manufacturing device
JP5002100B2 (en) * 2001-09-13 2012-08-15 キヤノン株式会社 Focus position detection method and focus position detection apparatus
WO2004059394A2 (en) * 2002-12-30 2004-07-15 Koninklijke Philips Electronics N.V. Determining lithographic parameters to optimise a process window
JP4873242B2 (en) * 2004-06-22 2012-02-08 株式会社ニコン Best focus detection method, exposure method, and exposure apparatus
CN102053506A (en) * 2009-11-05 2011-05-11 中芯国际集成电路制造(上海)有限公司 Method for monitoring focusing of exposure machine
JP5835968B2 (en) * 2011-07-05 2015-12-24 キヤノン株式会社 Determination method, program, and exposure method
JP6661371B2 (en) * 2015-12-25 2020-03-11 キヤノン株式会社 Evaluation method, exposure method, and article manufacturing method
WO2017171880A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Systems, methods, and apparatuses for implementing critical dimension (cd) and phase calibration of alternating phase shift masks (apsm) and chromeless phase lithography (cpl) masks for modeling
JP6730850B2 (en) * 2016-06-01 2020-07-29 キヤノン株式会社 Exposure condition determination method, program, information processing apparatus, exposure apparatus, and article manufacturing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090077528A1 (en) * 2003-07-02 2009-03-19 Kabushiki Kaisha Toshiba Pattern correction method, pattern correction system, mask manufacturing method, semiconductor device manufacturing method, recording medium, and designed pattern
TWI396225B (en) * 2004-07-23 2013-05-11 尼康股份有限公司 Image surface measuring method, exposuring method, device manufacturing method, and exposuring device
TW201600940A (en) * 2006-02-21 2016-01-01 尼康股份有限公司 Exposure apparatus, exposure method and device manufacturing method
US20080049203A1 (en) * 2006-08-28 2008-02-28 Canon Kabushiki Kaisha Exposure apparatus
TW201019041A (en) * 2008-09-25 2010-05-16 Zeiss Carl Smt Ag Projection exposure apparatus with optimized adjustment possibility
TW201702764A (en) * 2008-09-25 2017-01-16 卡爾蔡司Ｓｍｔ有限公司 Projection exposure apparatus with optimized adjustment possibility

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210033557A1 (en) * 2019-07-30 2021-02-04 Applied Materials, Inc. Differential capacitive sensors for in-situ film thickness and dielectric constant measurement
US11781214B2 (en) * 2019-07-30 2023-10-10 Applied Materials, Inc. Differential capacitive sensors for in-situ film thickness and dielectric constant measurement

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