TWI721595B - Apparatus for collecting by-product having cooling line of semiconductor manufacturing process - Google Patents
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Abstract
一種配備冷卻流路的半導體工程反應副產物收集裝置的特徵在於，包括：外殼，在內壁上形成有用於使通過上述上板的氣體流入口流入且利用加熱器調節溫度之後的排出氣體形成渦流並對反應副產物進行收集的內壁板；內部收集塔，由垂直板、上側面板以及被嵌入到垂直板的渦流板組裝而成，用於對排出氣體進行凝聚並收集反應副產物；主冷卻流路，貫通上述內部收集塔並利用冷卻水對排出氣體進行冷卻；以及，多重連接管道，利用安裝在上述外殼外部的供應管和排出管，依次向上述上板冷卻流路以及主冷卻流路迴圈供應和排出冷卻水。A semiconductor engineering reaction by-product collection device equipped with a cooling flow path is characterized by comprising: an outer shell formed on the inner wall for allowing the gas inlet through the upper plate to flow in and use a heater to adjust the temperature of the exhaust gas to form a vortex The inner wall plate that collects the reaction by-products; the inner collection tower, which is assembled by the vertical plate, the upper side panel and the vortex plate embedded in the vertical plate, is used to condense the exhaust gas and collect the reaction by-products; main cooling The flow path penetrates the internal collection tower and uses cooling water to cool the exhaust gas; and, multiple connection pipes use supply pipes and exhaust pipes installed outside the casing to sequentially flow to the upper plate cooling flow path and the main cooling flow path Circulating supply and discharge of cooling water.
Description
本發明係與配備冷卻流路的半導體工程反應副產物收集裝置有關；特別是指一種為了能夠從在製造半導體的製程腔體中使用後排出的排出氣體成分中有效地收集反應副產物而將冷卻流路直接導入到內部空間並借此提升內部收集塔的反應副產物收集效率的收集裝置。The present invention relates to a semiconductor engineering reaction by-product collection device equipped with a cooling flow path; in particular, it refers to a method for effectively collecting the reaction by-products from the exhaust gas components discharged after use in the process chamber for manufacturing semiconductors. A collection device that directly introduces the flow path into the internal space and thereby improves the collection efficiency of reaction by-products of the internal collection tower.
通常，半導體製造工程大體上包括前工程（製造（Fabrication）工程）以及後工程（裝配（Assembly）工程）。Generally, semiconductor manufacturing engineering generally includes pre-engineering (Fabrication engineering) and post-engineering (Assembly engineering).
上述前工程是指通過在各種製程腔體（Chamber）的內部重複執行在晶圓（Wafer）上沉積形成薄膜並對沉積形成的薄膜進行選擇性蝕刻的過程而加工出特定圖案的半導體晶片（Chip）製造工程。The above-mentioned pre-engineering refers to the process of repeatedly performing the process of depositing and forming a thin film on the wafer and selectively etching the deposited thin film in various process chambers (Chamber) to process a semiconductor wafer with a specific pattern (Chip )Manufacturing Engineering.
此外，上述後工程是指通過對在上述前工程中在晶圓上製造出的晶片進行單獨切割分離之後與引線框架進行結合而組裝出成品的封裝（package）工程。In addition, the above-mentioned post process refers to a package process of assembling a finished product by individually cutting and separating the wafer manufactured on the wafer in the above-mentioned previous process and then combining it with a lead frame.
具體來講，上述前工程是指在晶圓上沉積形成薄膜或對在晶圓上沉積形成的薄膜進行蝕刻的工程，為此，將在向製程腔體的內部注入如SiH 4（矽烷，Silane）、砷化氫（Arsine）、氯化硼、氫氣、WF6（六氟化鎢，Tungsten hexafluoride）等反應氣體之後在高溫下執行工程。此時，在製程腔體的內部將產生大量的含有各種易燃氣體、腐蝕性異物以及有毒成分的有害氣體等。 Specifically, the above-mentioned pre-process refers to the process of depositing and forming a thin film on a wafer or etching a thin film deposited on the wafer. For this purpose, SiH 4 (Silane, Silane) will be injected into the process chamber. ), Arsine (Arsine), boron chloride, hydrogen, WF6 (Tungsten hexafluoride) and other reactive gases are then executed at high temperature. At this time, a large amount of harmful gases containing various flammable gases, corrosive foreign substances, and toxic components will be generated inside the process chamber.
為了能夠在對如上所述的有害氣體進行淨化之後排出，在半導體製造裝置中配備有用於將製程腔體轉換成真空狀態的真空泵以及用於在真空泵的後端對從製程腔體排出的排出氣體進行淨化之後再排出到大氣的洗滌器（Scrubber）。In order to be able to purify the harmful gases as described above, the semiconductor manufacturing equipment is equipped with a vacuum pump for converting the process chamber into a vacuum state and a vacuum pump for exhausting the exhaust gas discharged from the process chamber at the rear end of the vacuum pump. Scrubber that is discharged to the atmosphere after purification.
但是，因為洗滌器只能對氣體形態的反應副產物進行淨化和處理，因此當反應副產物在被排出到製程腔體的外部之後發生固化時，會造成如因為附著在排氣管中而導致排出氣體壓力的上升、因為流入到真空泵而誘發泵的故障或因為有害氣體逆流到製程腔體而導致晶圓受到污染等多種問題。However, because the scrubber can only purify and treat the reaction by-products in the form of gas, when the reaction by-products solidify after being discharged to the outside of the process chamber, it will cause problems such as adhesion to the exhaust pipe. There are many problems such as the increase in the pressure of the exhaust gas, the failure of the pump due to the inflow of the vacuum pump, or the contamination of the wafer due to the backflow of harmful gases into the process chamber.
為此，半導體製造裝置通過在製程腔體與真空泵之間安裝反應副產物收集裝置而對從製程腔體排出的排出氣體進行凝聚。To this end, the semiconductor manufacturing apparatus condenses the exhaust gas discharged from the process chamber by installing a reaction by-product collecting device between the process chamber and the vacuum pump.
如上所述的反應副產物收集裝置通過泵管與製程腔體以及真空泵連接，從而對在製程腔體內進行反應之後排出的排出氣體中所包含的粒子狀反應副產物進行凝聚和收集。The reaction by-product collection device described above is connected to the process chamber and the vacuum pump through a pump tube, so as to condense and collect the particulate reaction by-products contained in the exhaust gas discharged after the reaction in the process chamber.
通常，反應副產物收集裝置的結構中包括：外殼，提供用於對所流入的排出氣體進行收容的空間部；上板，用於對外殼的上部進行覆蓋，形成有用於維持保護O型環以及收集反應副產物的適當溫度的冷卻流路；內部收集塔，用於對流入到外殼內部的排出氣體中所包含的反應副產物進行凝聚和收集；以及，加熱器，用於調節至可使流入到外殼內部的排出氣體調節形成反應副產物的適當的溫度分佈。Generally, the structure of the reaction by-product collection device includes: an outer shell, which provides a space for accommodating the discharged gas flowing in; an upper plate, which covers the upper part of the shell, is formed with an O-ring for maintaining and protecting; A cooling flow path with an appropriate temperature for collecting the reaction by-products; an internal collection tower for condensing and collecting the reaction by-products contained in the exhaust gas flowing into the inside of the casing; and a heater for adjusting to allow the inflow The exhaust gas to the inside of the casing adjusts the proper temperature distribution to form the reaction by-products.
在如上所述構成的收集裝置中最為重要的是，需要使構成安裝於外殼內部的內部收集塔的各個板表面均勻地與排出氣體接觸，以便於能夠更加有效且快速地使包含於排出氣體中的粒子狀有毒物質發生凝聚並作為反應副產物被收集。The most important thing in the collection device constructed as described above is that the surfaces of the respective plates constituting the internal collection tower installed in the housing should be uniformly contacted with the exhaust gas so as to be contained in the exhaust gas more efficiently and quickly. The particulate toxic substances agglomerate and are collected as reaction by-products.
但是，現有的反應副產物收集裝置採用的是通過使得在流入到外殼內部的同時借助於加熱器被調節至可形成反應副產物的適當的溫度分佈的高溫排出氣體與內部收集塔的板表面發生接觸而進行收集的方式或通過利用螺旋槳變更所流入的排出氣體的流動而使其均勻地擴散到外殼內部並借助於與內部收集塔的板表面的接觸而進行收集的方式等，從而會因為內部收集塔的內側板的溫度高於外側板的溫度而導致收集效率下降的問題，而且還會因為排出氣體無法流暢地流入到內側並均勻擴散而導致與板表面的接觸量不足的問題，並最終導致所流入的排出氣體作為反應副產物被凝聚的時間過長的結構性問題。However, the existing reaction by-product collection device uses a high-temperature exhaust gas that is adjusted to form a proper temperature distribution of the reaction by-products by means of a heater while flowing into the inside of the housing. The method of collecting by contact or by changing the flow of the inflowing exhaust gas with a propeller to make it evenly diffuse into the inside of the housing and collecting by contact with the plate surface of the internal collecting tower, etc. The temperature of the inner plate of the collection tower is higher than the temperature of the outer plate, which leads to the problem of reduced collection efficiency. Moreover, the exhaust gas cannot flow smoothly into the inner side and diffuse uniformly, resulting in insufficient contact with the plate surface, and finally A structural problem that causes the inflowing exhaust gas to be condensed as a reaction by-product for too long.
先行技術文獻Advanced technical literature
專利文獻Patent literature
（專利文獻0001）韓國註冊專利公報註冊編號10-0717837（2007.05.07.）(Patent Document 0001) Korean Registered Patent Publication Registration No. 10-0717837 (2007.05.07.)
（專利文獻0002）韓國註冊專利公報註冊編號10-0862684（2008.10.02.）(Patent Document 0002) Korean Registered Patent Publication Registration No. 10-0862684 (2008.10.02.)
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（專利文獻0004）韓國註冊專利公報註冊編號10-1806480（2017.12.01.）(Patent Document 0004) Korean Registered Patent Publication Registration No. 10-1806480 (2017.12.01.)
本發明的目的在於解決如上所述的現有問題而提供一種通過配備由貫通內部收集塔的主冷卻流路和安裝在外殼內壁上的內壁板以及形成不同大小的氣孔板組裝而成的內部收集塔而在對所流入的排出氣體進行冷卻的同時形成渦流，從而對高密度凝聚的反應副產物進行收集的反應副產物收集裝置。The purpose of the present invention is to solve the above-mentioned existing problems and provide an interior assembled by equipping the main cooling flow path penetrating the internal collection tower, the inner wall plate installed on the inner wall of the housing, and the air hole plates of different sizes. The collection tower is a reaction by-product collection device that forms a vortex while cooling the inflowing exhaust gas, thereby collecting high-density agglomerated reaction by-products.
為了達成如上所述的目的並解決現有技術中存在的問題，本發明提供一種配備冷卻流路的半導體工程反應副產物收集裝置，其特徵在於：在通過安裝在製程腔體與真空泵之間的管道上而對從上述製程腔體排出的排出氣體內的反應副產物進行收集的半導體工程反應副產物收集裝置中，包括：外殼，在對通過形成有氣體流入口以及上板冷卻流路的上板流入的排出氣體進行收容之後再通過形成有氣體排出口的下板進行排出，在內壁上形成有用於使通過上述上板的氣體流入口流入且利用加熱器調節溫度之後的排出氣體形成渦流並對反應副產物進行收集的內壁板；內部收集塔，在與下板相距一定間隔的上部安裝在外殼內部，由用於形成主冷卻流路的安裝空間的多個垂直板、為了誘導排出氣體的流動以及形成渦流而對垂直板的上側面進行覆蓋的上側面板以及被嵌入到垂直板的渦流板組裝而成，用於對排出氣體進行凝聚並收集反應副產物；主冷卻流路，通過貫通上述內部收集塔而利用冷卻水對排出氣體進行冷卻；以及，多重連接管道，利用安裝在上述外殼外部的供應管以及排出管依次向上述上板冷卻流路以及主冷卻流路迴圈供應和排出冷卻水。In order to achieve the above objectives and solve the problems in the prior art, the present invention provides a semiconductor engineering reaction by-product collection device equipped with a cooling flow path, which is characterized in that it passes through a pipeline installed between the process chamber and the vacuum pump. The semiconductor engineering reaction by-product collection device that collects the reaction by-products in the exhaust gas discharged from the above-mentioned process chamber includes: a housing, and an upper plate formed with a gas inlet and an upper plate cooling flow path After the inflowing exhaust gas is contained, it is discharged through a lower plate formed with a gas discharge port. The inner wall is formed with a gas inlet through the upper plate and the exhaust gas after the temperature is adjusted by a heater to form a vortex and form a vortex. The inner wall plate that collects the reaction by-products; the inner collecting tower is installed inside the shell at a certain interval from the lower plate, and is composed of multiple vertical plates used to form the installation space of the main cooling flow path in order to induce exhaust gas The upper side panel that covers the upper side of the vertical plate and the vortex plate embedded in the vertical plate are assembled to condense the exhaust gas and collect the reaction by-products; the main cooling flow path passes through The internal collection tower uses cooling water to cool the exhaust gas; and, multiple connection pipes use supply pipes and exhaust pipes installed outside the housing to sequentially supply and discharge the upper plate cooling flow path and the main cooling flow path loops Cooling water.
作為較佳的實施例，在上述外殼的內壁各個面上橫跨上下區域以一定的間隔形成內壁板，在相鄰的面上形成的內壁板相互交錯安裝，且在各個側面上以小於相應面的水平長度的長度上下相互交錯安裝。As a preferred embodiment, the inner wall panels are formed at a certain interval across the upper and lower areas on each surface of the inner wall of the above-mentioned housing, and the inner wall panels formed on adjacent surfaces are staggered and installed on each side. The lengths less than the horizontal length of the corresponding surface are installed staggered up and down.
作為較佳的實施例，形成於上述上板的上板冷卻流路能夠使得從外部供應的冷卻水在通過與多重連接管道的冷卻水流入口連接的一側分支插口流入並迴圈之後再通過另一側分支插口排出到多重連接管道並向主冷卻流路一側迴圈。As a preferred embodiment, the upper plate cooling flow path formed on the upper plate can make the cooling water supplied from the outside flow in and circulate through the branch socket connected to the cooling water inlet of the multiple connection pipe and then pass through the other. The branch socket on one side is discharged to the multiple connection pipe and looped to the side of the main cooling flow path.
作為較佳的實施例，上述內部收集塔，能夠包括：多個垂直板，相距一定的間隔配置；上側面垂直板，用於對各個垂直板的上側面進行覆蓋；基礎板，用於對各個垂直板的下部進行支撐；以及，渦流板，在水平方向上交叉嵌入到上述各個垂直板；As a preferred embodiment, the above-mentioned internal collection tower can include: a plurality of vertical plates arranged at a certain interval; an upper side vertical plate for covering the upper side of each vertical plate; a base plate for covering each vertical plate The lower part of the vertical plate is supported; and the vortex plate is cross-embedded in the above-mentioned vertical plates in the horizontal direction;
其中，在上述垂直板、上側面板、基礎板以及渦流板的表面分別形成可供排出氣體移動的氣孔，Wherein, air holes are formed on the surfaces of the above-mentioned vertical plate, upper side panel, base plate, and vortex plate to allow the exhaust gas to move, respectively,
在上述垂直板上垂直形成可供主冷卻流路貫通的一個以上的管道槽，以便於在安裝U字形管道形狀的主冷卻流路時輕易地對其上下位置進行調節。One or more duct grooves through which the main cooling flow path can penetrate are vertically formed on the vertical plate, so that the vertical position of the U-shaped duct-shaped main cooling flow path can be easily adjusted when the main cooling flow path is installed.
作為較佳的實施例，能夠通過在上述內部收集塔的兩側垂直板上形成向外側凸出的水平板而在形成渦流的同時延長排出氣體流動的停滯時間。As a preferred embodiment, horizontal plates protruding to the outside can be formed on the vertical plates on both sides of the above-mentioned internal collection tower to prolong the stagnation time of the exhaust gas flow while forming a vortex.
作為較佳的實施例，能夠在上述上側面板的表面排列形成不同大小的多個氣孔，且通過使形成于長邊兩側末端的氣孔大於形成於其他位置的其他氣孔而使得從上部流入的排出氣體在外側的排出量大於中央部。As a preferred embodiment, a plurality of pores of different sizes can be arranged on the surface of the upper panel, and the pores formed at the ends of both sides of the long side are larger than other pores formed in other positions, so that the discharge of the inflow from the upper part can be achieved. The amount of gas discharged on the outside is greater than that in the center.
作為較佳的實施例，能夠使形成於上述垂直板上的氣孔大於形成於渦流板上的氣孔。As a preferred embodiment, the air holes formed on the vertical plate can be made larger than the air holes formed on the vortex plate.
作為較佳的實施例，上述主冷卻流路能夠採用由上下構成的水平管以及在一側對上述水平管進行連接的彎曲管構成的“U”字形管道形狀。As a preferred embodiment, the above-mentioned main cooling flow path can adopt a "U"-shaped pipe shape composed of a horizontal pipe formed up and down and a curved pipe connecting the horizontal pipe on one side.
作為較佳的實施例，上述主冷卻流路能夠由兩個以上的多個構成。As a preferred embodiment, the above-mentioned main cooling flow path can be composed of two or more.
作為較佳的實施例，上述多重連接管道能夠在通過與冷卻水流入口連接的上板冷卻流路的一側分支插口流入並迴圈之後再通過另一側分支插口排出到多重連接管道的供應管並通過位於下部的分支插口供應到主冷卻流路。流入到主冷卻流路的下部水平管的冷卻水在流過上述水平管的過程中對內部收集塔周邊的排出氣體進行冷卻之後排出到外部的排出管。接下來，將通過位於排出管末端的冷卻水排出口進行排出。As a preferred embodiment, the above-mentioned multiple connection pipe can flow in and circulate through one side branch socket of the upper plate cooling flow path connected to the cooling water inlet, and then discharge to the supply pipe of the multiple connection pipe through the other side branch socket. And it is supplied to the main cooling flow path through the branch socket at the lower part. The cooling water flowing into the lower horizontal pipe of the main cooling flow path cools the exhaust gas around the inner collecting tower while flowing through the horizontal pipe, and then is discharged to the external discharge pipe. Next, it will be discharged through the cooling water outlet at the end of the discharge pipe.
作為較佳的實施例，上述多重連接管道能夠在配備有兩個以上的主冷卻流路時通過在供應管以及排出管所處的下部以及上部分別配備內部由空間部構成的冷卻水腔體而利用一個供應管將集聚到位於下部的冷卻水腔體的內部空間部中的冷卻水同時供應到位於下部的兩個以上的供應管或將排出到位於上部的冷卻水腔體的內部空間部中的經過熱交換之後的冷卻水通過一個排出管進行排出。As a preferred embodiment, when the above-mentioned multiple connection pipe is equipped with two or more main cooling channels, the lower and upper parts where the supply pipe and the discharge pipe are located are respectively equipped with cooling water cavities composed of internal spaces. A supply pipe is used to simultaneously supply the cooling water collected in the internal space of the cooling water chamber located at the lower part to two or more supply pipes located at the lower part or will be discharged to the internal space of the cooling water chamber located at the upper part. The cooling water after the heat exchange is discharged through a discharge pipe.
作為較佳的實施例，上述加熱器還包括：熱分配板，通過結合部以與加熱器的下部相距一定間隔的方式安裝在加熱器的下部，通過在外側形成多個氣孔而將一部分排出氣體供應到位於下部的內部收集塔的上部側並將剩餘的排出氣體供應到位於側方的外殼的內壁方向。As a preferred embodiment, the above heater further includes: a heat distribution plate, which is installed at the lower part of the heater at a certain distance from the lower part of the heater through the coupling part, and a part of the gas is discharged by forming a plurality of air holes on the outside. It is supplied to the upper side of the internal collection tower located at the lower part and the remaining exhaust gas is supplied to the direction of the inner wall of the housing located on the side.
具有如上所述特徵的適用本發明的反應副產物收集裝置，能夠通過配備貫通內部收集塔的主冷卻流路而將流入到外殼內部其利用加熱器調節溫度之後的排出氣體冷卻調節至適合於收集反應副產物的最佳溫度，從而在內部收集塔中對高密度凝聚的反應副產物進行收集。The reaction by-product collection device to which the present invention has the above-mentioned characteristics can be equipped with a main cooling flow path that penetrates the internal collection tower to cool and adjust the exhaust gas that flows into the inside of the housing after the temperature is adjusted by the heater to be suitable for collection. The optimal temperature of reaction by-products, so as to collect high-density coagulated reaction by-products in the internal collection tower.
此外，能夠通過構成內部收集塔的垂直板、上側面板以及渦流板之間的組裝結構以及形成於其表面的不同大小的氣孔結構使得所流入的排出氣體形成渦流並在延長通過內部收集塔的停滯時間的同時使其均勻擴散，從而在排出氣體中對高密度凝聚的反應副產物進行收集。In addition, through the assembly structure between the vertical plate, the upper side panel and the vortex plate that constitute the internal collection tower, and the pore structure of different sizes formed on the surface, the inflowing exhaust gas can form a vortex and extend through the stagnation of the internal collection tower. It is uniformly diffused over time, thereby collecting high-density agglomerated reaction by-products in the exhaust gas.
如上所述，本發明是具有多種效果的有用的發明，具有良好的產業應用前景。As described above, the present invention is a useful invention with various effects and has a good industrial application prospect.
接下來，將結合附圖對適用本發明的實施例的構成及其作用進行詳細的說明如下。此外，在對本發明進行說明的過程中，當判定對相關的公知功能或構成的具體說明可能會導致本發明的要旨變得不清晰時，將省略與其相關的詳細說明。Next, the configuration and function of the embodiment to which the present invention is applied will be described in detail below with reference to the accompanying drawings. In addition, in the process of describing the present invention, when it is determined that specific descriptions of related well-known functions or configurations may cause the gist of the present invention to become unclear, detailed descriptions related thereto will be omitted.
圖１是適用本發明之一實施例的反應副產物收集裝置的斜視圖，圖２是適用本發明之一實施例的反應副產物收集裝置的分解斜視圖，圖３是適用本發明之一實施例的反應副產物收集裝置的正向截面圖，圖４是適用本發明之一實施例的反應副產物收集裝置的側面圖，圖５是適用本發明之一實施例的反應副產物收集裝置的平面圖，圖６是對適用本發明之一實施例的垂直板進行圖示的示意圖，圖７是對適用本發明的渦流板的類型進行圖示的示意圖，圖８是適用本發明之一實施例的主冷卻流路的斜視圖。Fig. 1 is an oblique view of a reaction by-product collection device to which an embodiment of the present invention is applied, Fig. 2 is an exploded oblique view of a reaction by-product collection device to which an embodiment of the present invention is applied, and Fig. 3 is an embodiment of the present invention A front cross-sectional view of the reaction by-product collection device of the example, FIG. 4 is a side view of the reaction by-product collection device to which an embodiment of the present invention is applied, and FIG. 5 is a side view of the reaction by-product collection device to which an embodiment of the present invention is applied Plan view, Figure 6 is a schematic diagram of a vertical plate to which one embodiment of the present invention is applied, Figure 7 is a schematic diagram of a type of vortex plate to which the present invention is applied, and Figure 8 is a schematic diagram of an embodiment of the present invention Oblique view of the main cooling flow path.
如圖１所示，適用本發明的配備冷卻流路的半導體工程反應副產物收集裝置是在對從半導體工程的製程腔體中排出的排出氣體中所包含的粒子狀有毒氣體進行凝聚並作為反應副產物進行收集之後再將排出氣體排出到真空泵一側的裝置，尤其是一種能夠在內部收集裝置以及外殼表面上將在執行如氮化鈦原子層沉積（TiN-ALD）以及化學氣相澱積（CVD）等工程的製程腔體中使用之後進行排出的排出氣體成分中所包含的粒子狀有毒氣體均勻地凝聚成高密度反應副產物的裝置。As shown in Figure 1, the semiconductor process reaction byproduct collection device equipped with a cooling flow path to which the present invention is applied condenses and reacts particulate poisonous gas contained in the exhaust gas discharged from the process chamber of the semiconductor process. After the by-products are collected, the exhaust gas is discharged to the side of the vacuum pump, especially a device that can perform such as titanium nitride atomic layer deposition (TiN-ALD) and chemical vapor deposition on the internal collection device and the surface of the shell. (CVD) is a device that uniformly condenses the particulate poisonous gas contained in the exhaust gas component that is used in the process chamber of the process such as (CVD) into a high-density reaction by-product.
其構成大體上能夠包括：外殼110，用於在對所流入的排出氣體進行收容之後再進行排出，在內壁上形成有用於使所流入的排出氣體形成渦流並對反應副產物進行收集的內壁板111；上板120，對外殼的上部進行覆蓋，通過氣體流入口將排出氣體供應到外殼內部，形成有用於對O型環（O-Ring）進行保護的上板冷卻流路；下板130，對外殼的下部進行覆蓋，通過氣體排出口對去除反應副產物之後的排出氣體進行排出；加熱器140，用於將流入到外殼內部的排出氣體調節到可形成反應副產物的適當的溫度分佈並均勻地向周邊進行分配；內部收集塔150，在與下板相距一定間隔的上部安裝在外殼內部，由用於形成主冷卻流路的安裝空間的多個垂直板、為了誘導排出氣體的流動以及形成渦流而對垂直板的上側面進行覆蓋的上側面板以及被嵌入到垂直板的渦流板組裝而成，用於對排出氣體進行凝聚並收集反應副產物；主冷卻流路160，貫通上述內部收集塔150並利用冷卻水對排出氣體進行冷卻；以及，多重連接管道170，利用安裝在上述外殼外部的供應管和排出管，依次向上述上板冷卻流路以及主冷卻流路迴圈供應和排出冷卻水。The structure can generally include: an
為了在如上所述的適用本發明的反應副產物收集裝置中防止從製程腔體排出的排出氣體所導致的腐蝕等，其大部分構成要素均利用可阻止腐蝕的不銹鋼、鋁或可防止腐蝕的金屬中的某一種原材料製造。In order to prevent corrosion caused by the exhaust gas discharged from the process chamber in the reaction by-product collection device to which the present invention is applied as described above, most of its components are made of corrosion-resistant stainless steel, aluminum, or corrosion-resistant Manufacture of a certain kind of raw material in metal.
接下來，將對構成上述反應副產物收集裝置的各個構成進行更為詳細的說明。Next, each configuration constituting the above-mentioned reaction by-product collecting device will be described in more detail.
外殼110採用內部中空的箱體（Box）形狀，起到構成用於對流入到安裝於內部的內部收集塔150中的排出氣體進行凝聚和收集的氣體流路空間的作用。The
外殼110的上部以及下部為開放狀態，在對內部收集塔150進行收納安裝之後利用上述上板以及下板對開放的上部以及下部空間部進行覆蓋，然後利用如螺栓等結合部進行固定。The upper and lower parts of the
在外殼110的內壁各個面上橫跨上下區域以一定的間隔形成內壁板111，在使所流入的排出氣體形成渦流的同時對反應副產物進行收集。The
在內壁板111與排出氣體發生碰撞時產生的停滯且不規則的氣流和沒有與內壁板111發生碰撞的具有較快流速的周邊排出氣體的氣流將相互混合並形成渦流。The stagnant and irregular airflow generated when the
此外，內壁板111和在相鄰的面上形成的內壁板111相互交錯安裝，借此能夠使在各個面上流動的排出氣體和相鄰的排出氣體在不同的位置上與內壁板111發生碰撞，從而因為相互之間的流動不一致而形成渦流。In addition, the
此外，內壁板111在外殼的各個側面上以小於相應面的水平長度的長度上下相互交錯安裝，從而因為安裝有內壁板111的一側和沒有安裝的一側之間的流動不一致而形成渦流。In addition, the
通過在橫跨內壁的上下區域安裝如上所述的內壁板，能夠使流入到外殼內壁的排出氣體在壁面一側形成渦流並減緩其流速，從而有效地通過內壁板111對外部氣體溫度進行傳遞並借此均勻地進行冷卻，此時反應副產物將在外殼避免上發生凝聚，尤其是在內壁板111上將借助於邊緣效應實現更高密度的凝聚。By installing the above-mentioned inner wall panels across the upper and lower areas of the inner wall, the exhaust gas flowing into the inner wall of the casing can form a vortex on the wall side and slow down its flow rate, thereby effectively passing the
上板120起到對上部開放的外殼110的上部進行覆蓋的蓋子作用，通過在氣孔的上部凸出形成氣體流入口121並利用焊接等方式進行固定而供排出氣體流入。氣體流入口121接收從製程腔體排出的排出氣體並供應到外殼內部。The
此外，為了能夠在安裝於底面的加熱器140工作而對外殼110內部空間的溫度進行調節時防止安裝在上板下部的用於實現氣密的O型環（O-Ring）發生變形並因此導致其功能的下降，同時為了能夠通過對在流入到上板下部之後被加熱器升溫至高溫狀態的排出氣體進行冷卻而提供適合於收集反應副產物的適當溫度，在上板的上部面以凹槽形態加工形成上板冷卻流路122。此外，通過利用流路蓋123對形成凹槽的上板冷卻流路的上部進行覆蓋而實現水密性。為此，流路蓋能夠通過未圖示的用於實現水密性的密封處理方式結合，作為其結合方式採用包括如嵌入式、焊接式、螺栓結合方式等公知的結合方式即可。In addition, in order to be able to adjust the temperature of the internal space of the
上述上板冷卻流路122使得從外部供應的冷卻水在通過與多重連接管道170的冷卻水流入口170a連接的一側分支插口173流入並迴圈之後再通過另一側分支插口173排出到多重連接管道並向主冷卻流路160一側供應迴圈。為了避免所流入的冷卻水與所排出的冷卻水相互混合，能夠通過在上板冷卻流路122中形成邊界部而避免其發生連通。作為冷卻水，能夠使用水或冷媒。The upper plate cooling
下板130起到對下部開放的外殼110的下部進行覆蓋的蓋子作用，在某一位置氣孔的下部以焊接等方式凸出固定氣體排出口131。氣體排出口是可供對反應副產物進行收集和去除之後的排出氣體排出的通道。The
此外，在下板130的多個位置安裝有向外殼內部的上部方向凸出的多個支撐杆132，用於將內部收集塔150固定到與下板130相距一定間隔的上部並對其荷重進行支撐。上述支撐杆132中的一部分用於使位於內部收集塔150最下端的基礎板與外殼的下部相距一定間隔，而另一部分通過與安裝在內部收集塔150最外側的垂直板交叉而對向外凸出的渦流板進行支撐。In addition, a plurality of
作為支撐杆132與內部收集塔之間的結合方式，採用單純的嵌入結合方式或利用如單獨的螺栓等結合部件進行結合或通過其他公知的各種結合方式進行結合即可。As the coupling method between the
加熱器140通過螺栓或焊接等結合方式被連接安裝到形成於上板的氣體流入口121的底面一側，從而將流入到外殼110內部的排出氣體調節至適合於形成反應副產物的適當的溫度分佈。The
此外，加熱器140還包括通過結合手段與下部相距一定間隔安裝的熱分配板141。熱分配板141能夠在防止加熱器中產生的熱源被直接傳遞到內部收集塔的上部的同時將熱源傳遞至上板的下部空間的遠處。In addition, the
在外側形成有多個氣孔的熱分配板141的大小大於加熱器的大小以及位於其下部的內部收集塔150的上部面積。The size of the heat distribution plate 141 having a plurality of pores formed on the outer side is larger than the size of the heater and the upper area of the inner collection tower 150 located at the lower part thereof.
以如上所述的方式形成的熱分配板能夠將通過在外側形成的氣孔1411的一部分排出氣體供應到位於其下部的內部收集塔的上部一側，並將剩餘的排出氣體供應至位於側方的外殼的內壁方向。The heat distribution plate formed as described above can supply part of the exhaust gas passing through the
作為熱分配板與加熱器之間的結合方式，能夠採用螺栓結合方式。因為其他結合結構採用公知的結合方式即可，因此將省略其詳細的說明。As the coupling method between the heat distribution plate and the heater, a bolt coupling method can be adopted. Since other coupling structures can use well-known coupling methods, detailed descriptions thereof will be omitted.
上述加熱器140的熱源在從包含安裝於上板的上側面上的溫度感測器的加熱器電源供應部142載入電源時，加熱器將按照所設定的溫度發熱。When the heat source of the
加熱器的溫度能夠根據排出氣體的類型進行不同的設定。作為加熱器的原材料，使用可以防止因為排出氣體而導致的腐蝕的如陶瓷或鉻鎳鐵合金，其基本形狀採用可均勻地放射出熱源的將多個散熱鰭（或散熱板）以放射狀配置的構成。The temperature of the heater can be set differently according to the type of exhaust gas. As the raw material of the heater, ceramic or Inconel, which can prevent corrosion due to exhaust gas, is used. Its basic shape is a radial arrangement of multiple radiating fins (or radiating plates) that can uniformly radiate heat sources. constitute.
加熱器的作用在於防止從製程腔體排出的排出氣體通過形成於上板的氣體流入口121流入時發生凝聚堵塞並在到達內部收集塔150時發生最大限度的凝聚。The function of the heater is to prevent the exhaust gas discharged from the process chamber from flowing in through the
如上所述結構的加熱器，能夠通過向外殼內部空間均勻地供應調節溫度之後的排出氣體而使其均勻地發生凝聚。The heater structured as described above can uniformly condense the exhaust gas after adjusting the temperature to the inner space of the housing.
此外，配備上述熱分配板141的另一個原因在於，隨著半導體製造工程的變化，當從製程腔體排出的排出氣體中所包含的較輕氣體的含量高於較重氣體的含量時，遠離加熱器的排出氣體的溫度冷卻速度將大於接近加熱器的排出氣體的冷卻速度，從而可能會在到達收集塔並被捕獲之前在上側面的一部分被凝聚成高密度反應副產物並因此對空間部流路造成堵塞，而且在被進一步冷卻至更低的溫度時可能會形成低密度多孔性反應副產物並對空間部的流路進行堵塞，而通過將熱分配板141配置在加熱器的下部能夠將熱源傳導到更遠的位置並借此防止如上所述的現象。In addition, another reason for the above-mentioned heat distribution plate 141 is that as the semiconductor manufacturing process changes, when the content of the lighter gas contained in the exhaust gas discharged from the process chamber is higher than the content of the heavier gas, stay away from The temperature cooling rate of the exhaust gas from the heater will be greater than the cooling rate of the exhaust gas close to the heater, so that a part of the upper side may be condensed into high-density reaction by-products before reaching the collection tower and being trapped. The flow path is clogged, and when it is further cooled to a lower temperature, low-density porous reaction by-products may form and block the flow path in the space. The heat distribution plate 141 can be placed under the heater. Conduct the heat source to a farther location and thereby prevent the phenomenon described above.
內部收集塔150是被收納安裝到外殼110內部的構成，能夠通過增加與排出氣體的接觸流路以及停滯時間而對排出氣體進行凝聚並作為高密度反應副產物進行收集。The internal collection tower 150 is a structure that is housed and installed inside the
為此，內部收集塔的構成中包括：多個垂直板151，相距一定的間隔配置；上側面垂直板152，用於對各個垂直板的上側面進行覆蓋；基礎板153，用於對各個垂直板的下部進行支撐；以及，渦流板154，在水平方向上交叉嵌入到上述各個垂直板。To this end, the internal collection tower includes a plurality of
在上述垂直板151、上側面板152、基礎板153以及渦流板154的表面分別形成可供排出氣體移動的氣孔1511、1521、1531、1541。形成於垂直板上的氣孔相對大於形成於其他上側面板、基礎板以及渦流板上的氣孔大小，從而使得排出氣體向側方的移動更加容易，而在水平方向安裝的上側面板、基礎板以及渦流板中，通過使在位於最下部的基礎板上形成的氣孔最大而便於向排出口排出為宜。On the surfaces of the
在上述垂直板151中除氣孔1511之外還形成有嵌入部1512以及嵌入片1513，從而與上側面板以及渦流板潛入結合。嵌入部沿著垂直方向以及水平方向以一定的間隔形成，可供渦流板在水平方向上嵌入。嵌入片形成於上部末端，可供上側面板嵌入結合。In addition to the
此外，在各個垂直板上垂直形成可供主冷卻流路貫通以一定的間隔排列安裝的垂直板之間的一個以上的管道槽1514，以便於在對U字形側面形狀的主冷卻流路的上下位置進行調節時能夠無干擾地自由安裝。管道槽1513採用上部側封閉而只有下部方向側形成開口的形態。In addition, one or
在上述上側面板152的表面排列形成不同大小的多個氣孔1521，且通過使形成於長邊兩側末端的氣孔大於形成於其他位置的其他氣孔而使得從上部流入的排出氣體在外側的排出量大於中央部。通過如上所述的氣孔大小差異能夠形成流速差異，從而使得在內部收集塔的內部空間中流動的排出氣體形成渦流。A plurality of
此外，在上述上側面板中除氣孔之外還排列形成可供位於其下部的垂直板151嵌入的多個嵌入部1522。嵌入部的長邊方向兩側端以凹槽形態構成而其他則由孔形態構成，可供在位於其下部的垂直板的上端形成的嵌入片組裝。此外，還能夠追加地對嵌入結合部位進行焊接。In addition, in addition to the air holes, a plurality of embedding
上述基礎板153上形成有可供排出氣體流動的不同大小的氣孔1531，從而在使排出氣體上下流動的同時通過對所接觸的所有垂直板的下部提供支撐而對其荷重進行支撐，且能夠通過形成於下板的支撐杆與外殼的下部相距一定間隔，從而防止排出氣體的熱源被直接傳遞到下板。The
此外，基礎板153還能夠起到防止因為反應副產物直接跌落到氣體排出口131而造成堵塞的作用。In addition, the
此外，在基礎板153上除氣孔之外還形成有用於使主冷卻流路160通過內部收集塔的內部空間進行安裝的一個以上的管道槽1532，以防止在安裝主冷卻流路的下部側管道時發生干擾。管道槽1532僅向基礎板152a的一側方向形成開口。In addition, in addition to the air holes, the
在上述渦流板154中除可供排出氣體移動的氣孔1541之外還形成兩個以上的嵌入片1542，從而被嵌入結合到形成於垂直板上的任意的嵌入部。渦流板的結合方向是沿著水平方向安裝到垂直板上，從而使上下移動的排出氣體形成渦流。In addition to the
此時，在相鄰的垂直板之間的不同高度位置上交錯安裝多個渦流板，而通過採用如上所述的交錯安裝方式，排出氣體將在渦流板的長度無法觸及的與對向垂直板之間的縫隙中快速下降，從而使排出氣體在上下配置的渦流板與垂直板之間的縫隙中左右交錯流過。借助於如上所述的排出氣體的快速流動，除在渦流板上生成的渦流之外還能夠追加地在渦流板的末端部周圍幫助渦流的形成。At this time, a plurality of vortex plates are staggeredly installed at different height positions between adjacent vertical plates, and by adopting the staggered installation method as described above, the exhaust gas will be inaccessible to the opposite vertical plate at the length of the vortex plate The gap between the two is rapidly descended, so that the exhaust gas flows through the gap between the vortex plate and the vertical plate arranged up and down. With the rapid flow of the exhaust gas as described above, in addition to the vortex generated on the vortex plate, it is possible to additionally assist the formation of the vortex around the end portion of the vortex plate.
上述嵌入片1542能夠根據渦流板的類型在一側面凸出形成兩個或三個，並通過嵌入到形成於垂直板上的嵌入部的兩個位置或三個位置而維持穩定的結合狀態。此外，嵌入片的數量能夠根據渦流板的大小或形狀採用不同的實施例。The above-mentioned embedded
在構成上述說明的內部收集塔150的垂直板151、上側面板152、基礎板153以及渦流板154中，形成於垂直板151上的氣孔1511相對大於形成於渦流板154上的氣孔1541，從而使排出氣體的流入更加流暢。In the
與此相反，形成於渦流板154上的氣孔1541相對小於形成於垂直板151上的氣孔1511，從而使排出氣體在垂直方向上的流入相對較少，並借此在延長停滯時間且形成渦流的同時使排出氣體在內部收集塔的內部均勻擴散。Contrary to this, the
通過利用如上所述的方式使排出氣體均勻擴散，能夠在使流入到內部收集塔的排出氣體形成渦流的同時使得被主冷卻流路160冷卻的排出氣體借助於表面接觸以及相互凸出結構的邊緣效應促進排出氣體的凝聚並借此提升收集效率。By uniformly dispersing the exhaust gas as described above, the exhaust gas flowing into the internal collecting tower can form a vortex, and the exhaust gas cooled by the main
主冷卻流路160採用平躺的“U”字形管道形狀。具體來講，包括上下構成的水平管1601以及在一側對上述水平管進行連接的彎曲管1602。其數量能夠是一個或多個。The main
上述水平管貫通內部收集塔150的上部側和下部側，從而對上下區域周邊的排出氣體溫度進行冷卻。The above-mentioned horizontal pipe penetrates the upper and lower sides of the internal collection tower 150 to cool the exhaust gas temperature around the upper and lower regions.
從主冷卻流路160供應的冷卻水在通過位於下部的水平管供應之後再通過位於上部的水平管排出到外部的多重連接管道。The cooling water supplied from the main
此時，對於在主冷卻流路中流動的冷卻水的溫度，能夠根據所流入的排出氣體的類型對冷卻水的溫度進行調節。因此，本發明並不對冷卻水的溫度進行特殊的限定。At this time, as for the temperature of the cooling water flowing in the main cooling flow path, the temperature of the cooling water can be adjusted according to the type of exhaust gas flowing in. Therefore, the present invention does not specifically limit the temperature of the cooling water.
適用一實施例的本發明通過配備兩個主冷卻流路而提升了冷卻效率。此外，還能夠配備兩個以上的主冷卻流路。通過採用如上所述的由多個構成的結構，能夠在更短的時間內對在內部收集塔中流動的排出氣體的溫度進行冷卻。通過如上所述的構成，能夠在構成內部收集塔150的垂直板、上側面板、基礎板以及渦流板的表面高密度凝聚反應副產物。The present invention applied to one embodiment improves the cooling efficiency by equipping two main cooling flow paths. In addition, two or more main cooling channels can also be equipped. By adopting the structure composed of a plurality of pieces as described above, the temperature of the exhaust gas flowing in the internal collection tower can be cooled in a shorter time. With the above-mentioned configuration, the reaction by-products can be aggregated at a high density on the surfaces of the vertical plate, the upper side plate, the base plate, and the vortex plate that constitute the internal collection tower 150.
此外，如上所述構成的主冷卻流路160能夠通過均勻地對內部收集塔進行冷卻而在表面上對排出氣體中所包含的反應副產物進行凝聚，而且還能夠在主冷卻流路的表面與排出氣體發生接觸並對反應副產物進行收集，從而提升整體的收集效率。In addition, the main
多重連接管道170能夠由通過與安裝在向上述上板冷卻流路以及主冷卻流路供應冷卻水的位置以及排出冷卻水的位置上的各個分支插口173分別連接而使冷卻水進行迴圈的冷卻水供應管171以及排出管172構成。The multiple connection pipe 170 can be connected to the
所流入的冷卻水不是在封閉回路上迴圈而是與外部連接迴圈，從而利用包含新熱源的冷卻水替代經過熱交換之後的冷卻水。為此，包括未圖示的冷卻水供應源、冷卻水供應泵以及冷卻水儲藏罐。必要時，還能夠包括熱交換機。The inflowing cooling water does not circulate on a closed circuit but is connected to the outside, so that the cooling water containing a new heat source is used to replace the cooling water after heat exchange. To this end, it includes a cooling water supply source, a cooling water supply pump, and a cooling water storage tank (not shown). If necessary, a heat exchanger can also be included.
具體來講，多重連接管道170通過與冷卻水流入口170a連接的上板冷卻流路的一側分支插口173流入並迴圈之後再通過另一側分支插口173排出到多重連接管道的供應管171，然後通過位於下部的分支插口173供應到主冷卻流路160。流入到主冷卻流路的下部水平管的冷卻水在流過上述水平管的過程中對內部收集塔周邊的排出氣體進行冷卻之後排出到外部的排出管172。接下來，通過位於排出管末端的冷卻水排出口170b排出到未圖示的冷卻水罐或外部。Specifically, the multi-connection pipe 170 flows in and circulates through one
此外，上述多重連接管道170能夠在配備有兩個以上的主冷卻流路160時通過在供應管以及排出管所處的下部以及上部分別配備內部由空間部構成的冷卻水腔體174而不與所配備的兩個以上的各個主冷卻流路的水平管分別連接，而是利用一個供應管將集聚到位於下部的冷卻水腔體174的內部空間部中的冷卻水同時供應到位於下部的兩個以上的供應管或將排出到位於上部的冷卻水腔體174的內部空間部中的經過熱交換之後的冷卻水通過一個排出管進行排出。In addition, when the above-mentioned multiple connection pipe 170 is equipped with two or more main
通過配備如上所述的冷卻水腔體174，不需要根據主冷卻流路160的數量配備複雜的管道或分支插口也能夠同時向各個主冷卻流路160供應冷卻水，而且能夠使得在經過內部收集塔的過程中進行熱交換的冷卻水通過主冷卻流路160的排出口同時排出。By equipping the cooling
附件１是對適用本發明之一實施例的反應副產物收集裝置的各個區域中的反應副產物收集傾向進行圖示的示意圖。
如附件１所示，流入到適用本發明的反應副產物收集裝置中的排出氣體能夠在形成於外殼壁面上的上板的下部外側部分、內壁板、內部收集塔以及主冷卻流路上均勻地對高密度反應副產物進行收集。As shown in
本發明並不限定於如上所述的特定較佳實施例，在不脫離權利要求書中所要求的本發明之要旨的範圍內，具有本發明所屬技術領域之一般知識的人員能夠進行各種變形實施，且上述變更包含在權利要求書中所記載的範圍之內。The present invention is not limited to the specific preferred embodiments described above, and within the scope that does not deviate from the gist of the present invention as claimed in the claims, persons with general knowledge in the technical field of the present invention can make various modifications and implementations. , And the above-mentioned changes are included in the scope described in the claims.
［本發明］[this invention]
110:外殼110: shell
111:內壁板111: Inner Wall Panel
120:上板120: upper board
121:氣體流入口121: gas inlet
122:上板冷卻流路122: upper plate cooling flow path
123:流路蓋123: Flow path cover
130:下板130: lower board
131:氣體排出口131: Gas outlet
132:支撐杆132: support rod
140:加熱器140: heater
141:熱分配板141: Heat distribution plate
142:加熱器電源供應部142: Heater power supply unit
1411、1511、1521、1531、1541:氣孔1411, 1511, 1521, 1531, 1541: Stoma
150:內部收集塔150: Internal Collection Tower
151:垂直板151: vertical board
1512、1522:嵌入部1512, 1522: Embedded part
1513、1542:嵌入片1513, 1542: embedded piece
1514、1532:管道槽1514, 1532: pipe groove
152:上側面板152: Upper side panel
153:基礎板153: base board
154:渦流板154: Vortex plate
160:主冷卻流路160: main cooling flow path
1601:水準管1601: level tube
1602:彎曲管1602: curved tube
170:多重連接管道170: Multiple connection pipes
170a:冷卻水流入口170a: Cooling water inlet
170b:冷卻水排出口170b: Cooling water outlet
171:供應管171: Supply Pipe
172:排出管172: discharge pipe
173:分支插口173: branch socket
174:冷卻水腔體冷卻流路174: Cooling flow path of cooling water cavity
圖１是適用本發明之一實施例的反應副產物收集裝置的斜視圖。
圖２是適用本發明之一實施例的反應副產物收集裝置的分解斜視圖。
圖３是適用本發明之一實施例的反應副產物收集裝置的正向截面圖。
圖４是適用本發明之一實施例的反應副產物收集裝置的側面圖。
圖５是適用本發明之一實施例的反應副產物收集裝置的平面圖。
圖６是對適用本發明之一實施例的垂直板進行圖示的示意圖。
圖７是對適用本發明的渦流板的類型進行圖示的示意圖。
圖８是適用本發明之一實施例的主冷卻流路的斜視圖。
附件１是對適用本發明之一實施例的反應副產物收集裝置的各個區域中的反應副產物收集傾向進行圖示的示意圖。
Fig. 1 is a perspective view of a reaction by-product collecting device to which an embodiment of the present invention is applied.
Fig. 2 is an exploded perspective view of a reaction by-product collecting device to which an embodiment of the present invention is applied.
Fig. 3 is a front cross-sectional view of a reaction by-product collecting device to which an embodiment of the present invention is applied.
Fig. 4 is a side view of a reaction by-product collecting device to which an embodiment of the present invention is applied.
Fig. 5 is a plan view of a reaction by-product collecting device to which an embodiment of the present invention is applied.
Fig. 6 is a schematic diagram illustrating a vertical plate to which an embodiment of the present invention is applied.
Fig. 7 is a schematic diagram illustrating the type of vortex plate to which the present invention is applied.
Fig. 8 is a perspective view of a main cooling flow path to which an embodiment of the present invention is applied.
110:外殼 110: shell
120:上板 120: upper board
121:氣體流入口 121: gas inlet
123:流路蓋 123: Flow path cover
130:下板 130: lower board
142:加熱器電源供應部 142: Heater power supply unit
170:多重連接管道 170: Multiple connection pipes
170a:冷卻水流入口 170a: Cooling water inlet
170b:冷卻水排出口 170b: Cooling water outlet
171:供應管 171: Supply Pipe
172:排出管 172: discharge pipe
173:分支插口 173: branch socket
174:冷卻水腔體冷卻流路 174: Cooling flow path of cooling water cavity
Claims (9)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI789831B (en) * | 2021-04-28 | 2023-01-11 | 南韓商未來寶股份有限公司 | Apparatus for multi trapping of reaction by-product for semiconductor process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW446111U (en) * | 1999-05-17 | 2001-07-11 | Taiwan Semiconductor Mfg | Cooling collector |
| KR20170111437A (en) * | 2016-03-28 | 2017-10-12 | 주식회사 미래보 | By-product collecting device caused during the semiconductor manufacturing process |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW446111U (en) * | 1999-05-17 | 2001-07-11 | Taiwan Semiconductor Mfg | Cooling collector |
| KR20170111437A (en) * | 2016-03-28 | 2017-10-12 | 주식회사 미래보 | By-product collecting device caused during the semiconductor manufacturing process |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI789831B (en) * | 2021-04-28 | 2023-01-11 | 南韓商未來寶股份有限公司 | Apparatus for multi trapping of reaction by-product for semiconductor process |
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