TWI720263B - 電晶體結構以及其製造方法 - Google Patents
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Abstract
一種電晶體結構,包括摻雜硫的第一氧化物半導體層。源極結構與汲極結構設置在該第一氧化物半導體層上,其中該第一氧化物半導體層在該源極結構與該汲極結構之間的區域構成通道區域。摻雜硫的第二氧化物半導體層,至少設置在該第一氧化物半導體層的該通道區域上。
Description
本發明是有關於半導體製造技術,更是關於電晶體結構以及其製造方法。
在半導體的積體電路中,場效電晶體是主要元件。積體電路會包含大數量的電晶體。電晶體的性能與大小會影響積體電路整體的性能與大小。
傳統以矽基板為基礎的場效電晶體是金氧半導體(metal-oxide-semiconductor,MOS)的結構,包含閘極結構,以及在閘極結構兩側且在基板中的源極區域與汲極區域。在源極區域與汲極區域之間是通道區域。另外,薄膜電晶體的設計可以不需要以矽基板為基礎,但是其通道區域仍是以矽半導體來構成。
由於半導體材料的研發,場效電晶體的通道區域可以採用氧化物半導體(oxide semiconductor,OS)來取代,使得電晶體可以更容易製造。對於由氧化物半導體所製造的電晶體,其通道的性能會取決於氧化物半導體層的品質。
提升氧化物半導體層的通道的品質,可以提升氧化物半導體電晶體的品質。
本發明是關於電晶體結構以及其製造方法。電晶體結構的通道區域是多層摻雜硫的氧化物半導體層所構成,如此可以提升通道區域的品質,進而也提升電晶體的品質。
依據一實施例,本發明提供一種電晶體結構,包括摻雜硫的第一氧化物半導體層。源極結構與汲極結構設置在該第一氧化物半導體層上,其中該第一氧化物半導體層在該源極結構與該汲極結構之間的區域構成通道區域。摻雜硫的第二氧化物半導體層,至少設置在該第一氧化物半導體層的該通道區域上。
依據一實施例,所述的電晶體結構更包括:閘極絕緣層,設置在該第二氧化物半導體層或是在該第一氧化物半導體層上;以及閘極結構,設置在該閘極絕緣層上,位在該源極結構與該汲極結構之間。
依據一實施例,對於所述的電晶體結構,該第一氧化物半導體層的第一硫濃度不同於該第二氧化物半導體層的第二硫濃度。
依據一實施例,對於所述的電晶體結構,該第一氧化物半導體層的第一厚度大於該第二氧化物半導體層的第二厚度。
依據一實施例,對於所述的電晶體結構,該第一氧化物半導體層與該第二氧化物半導體層的材質包含In-Ga-Zn-O
(IGZO)、In-Zn-O(IZO)、In-Ga-O(IGO)、Zn-Sn-O(ZTO)、In-Sn-Zn-O(ITZO)、Hf-In-Zn-O(HIZO)、Al-Zn-Sn-O(AZTO)、Al-Zn-O(AZO)、Ga-Zn-O(GZO)、或是Zn-O(ZO)。
依據一實施例,對於所述的電晶體結構,該第二氧化物半導體層也包含一部份,設置在該源極結構與該汲極結構上。
依據一實施例,對於所述的電晶體結構,該源極結構與該汲極結構的每一個包括:金屬層,設置在該第一氧化物半導體層上;以及金屬氧化層,設置在該金屬層的頂部。
依據一實施例,所述的電晶體結構更包括基部氧化物半導體層在該第一氧化物半導體層上,且是在該第二氧化物半導體的相對邊。
依據一實施例,對於所述的電晶體結構,該第二氧化物半導體覆蓋過該源極結構、該汲極結構該以及該第一氧化物半導體層的該通道區域。該電晶體結構更包括:第一閘極絕緣層,在該第二氧化物半導體層上;以及第一閘極結構,設置在該閘極絕緣層上,具有一底部區域,位在該源極結構與該汲極結構之間。
依據一實施例,對於所述的電晶體結構,其更包括:第二閘極絕緣層,覆蓋過於該第一氧化物半導體層,在相對於該第二氧化物半導體層的相反邊;以及第二閘極結構,設置在該第二閘極絕緣層上。
依據一實施例,本發明提供一種製造電晶體結構的方法,包括提供結構基板,具有摻雜硫的第一氧化物半導體層。源
極結構與汲極結構形成在該第一氧化物半導體層上,其中該第一氧化物半導體層在該源極結構與該汲極結構之間的通道區域被暴露。摻雜硫的第二氧化物半導體層,形成至少在該第一氧化物半導體層的該通道區域上。
依據一實施例,對於製造電晶體結構的方法,其更包括形成閘極絕緣層在該第二氧化物半導體層或是在該第一氧化物半導體層上。閘極結構形成在該閘極絕緣層上,在該源極結構與該汲極結構之間。
依據一實施例,對於製造電晶體結構的方法,該第一氧化物半導體層的第一硫濃度不同於該第二氧化物半導體層的第二硫濃度。
依據一實施例,對於製造電晶體結構的方法,該第一氧化物半導體層的第一厚度大於該第二氧化物半導體層的第二厚度。
依據一實施例,對於製造電晶體結構的方法,該第一氧化物半導體層與該第二氧化物半導體層的材質包含In-Ga-Zn-O(IGZO)、In-Zn-O(IZO)、In-Ga-O(IGO)、Zn-Sn-O(ZTO)、In-Sn-Zn-O(ITZO)、Hf-In-Zn-O(HIZO)、Al-Zn-Sn-O(AZTO)、Al-Zn-O(AZO)、Ga-Zn-O(GZO)、或是Zn-O(ZO)。
依據一實施例,對於製造電晶體結構的方法,該第二氧化物半導體層也包含一部份,設置在該源極結構與該汲極結構上。
依據一實施例,對於製造電晶體結構的方法,該源極結
構與該汲極結構的每一個,該方法更包括:形成金屬層在該第一氧化物半導體層上;以及形成金屬氧化層在該金屬層的頂部。
依據一實施例,對於製造電晶體結構的方法,其更包括形成基部氧化物半導體層,在該第一氧化物半導體層上,且是在該第二氧化物半導體的相對邊。
依據一實施例,對於製造電晶體結構的方法,該第二氧化物半導體覆蓋過該源極結構、該汲極結構該以及該第一氧化物半導體層的該通道區域,其中該方法更包括:形成頂閘極絕緣層,在該第一氧化物半導體層上;以及形成頂閘極結構,在該頂閘極絕緣層上。該頂閘極結構具有一底部區域,位在該源極結構與該汲極結構之間。
依據一實施例,對於製造電晶體結構的方法,提供該結構基板的該步驟包括形成底閘極結構,於一基板上;形成底閘極絕緣層,覆蓋過該基板與該底閘極結構;以及形成該第一氧化物半導體層,覆蓋過該底閘極絕緣層。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
100:基板
102:閘極結構
104:閘極絕緣層
106:氧化物半導體層
108:汲極結構
110:源極結構
111:通道區域
112:保護層
114:空間區域
116:氧化物半導體層
120:基板
122、122a、122b:氧化物半導體層
124:源極結構(S)
126:汲極結構(D)
127:通道區域
128:氧化物半導體層
130:閘極絕緣層
132:頂部金屬層
134:鐵電層
136:底部金屬層
138:閘極結構(G)
200:基板
202:閘極結構
204:閘極絕緣層
206、206a、206b:氧化物半導體
208:源極結構
208’:抗氧化層
210:汲極結構
210’:抗氧化層
211:通道區域
212:金屬氧化層
214:氧化物半導體
216:閘極結構
218:閘極絕緣層
220:阻障層
222:閘極結構
224:保護層
圖1是依照本發明一實施例,繪示電晶體剖面結構示意圖。
圖2是依照本發明一實施例,繪示電晶體剖面結構示意圖。
圖3是依照本發明一實施例,繪示電晶體剖面結構示意圖。
圖4是依照本發明一實施例,繪示電晶體剖面結構示意圖。
圖5是依照本發明一實施例,繪示電晶體剖面結構示意圖。
圖6是依照本發明一實施例,繪示製造電晶體的方法的流程示意圖。
隨著電晶體結構配合半導體材料的研發,薄膜電晶體的通道區域可以由氧化物半導體來達成,如此至少可以簡化電晶體的製造流程。
經過研發可知,氧化物半導體的材料一般例如是In-Ga-Zn-O(IGZO)、In-Zn-O(IZO)、In-Ga-O(IGO)、Zn-Sn-O(ZTO)、In-Sn-Zn-O(ITZO)、Hf-In-Zn-O(HIZO)、Al-Zn-Sn-O(AZTO)、Al-Zn-O(AZO)、Ga-Zn-O(GZO)、或是Zn-O(ZO),或是類似的材料等。這些材料具有半導體的特性,可以用來取代金屬半導體來形成電晶體的通道區域。
再進一步對氧化物半導體的研發,氧化物半導體可以藉由摻雜硫而提升半導體的性能,可以預期也提升電晶體的通道效能。本發明提出採用摻雜硫的氧化物半導體,以多層的方式來製造電晶體的通道區域。
以下舉多個實施例來說明本發明,但是本發明不侷限於所舉的多個實施例。在這些實施例之間也允許有適當的結合,而構成其它的實施例。
圖1是依照本發明一實施例,繪示電晶體剖面結構示意
圖。參閱圖1,以薄膜電晶體為例,其是單閘極(single-gate)的結構。在基板100上形成有閘極結構102。閘極絕緣層104形成在閘極結構102上。氧化物半導體層106形成在閘極絕緣層104上。源極結構110與汲極結構108形成在氧化物半導體層106上的兩端。於此如一般可知,源極結構110與汲極結構108是依照實際電路操作來決定,因此源極結構110與汲極結構108一般是相同的結構,可以互換。氧化物半導體層106於本實施例是摻雜硫的氧化物半導體層106。氧化物半導體層106在源極結構110與汲極結構108之間區域是當作電晶體的通道區域111。由於源極結構110與汲極結構108不是全部覆蓋氧化物半導體層106,而對應通道區域111的位置,對應源極結構110與汲極結構108之間的空間區域114,於當前的製造階段是暴露的,其暴露的表面上可能存在缺陷。本發明更提出形成另一層摻雜硫的氧化物半導體層116,其至少有一部分覆蓋於氧化物半導體層106對應通道區域111的區域,其是被源極結構110與汲極結構108所暴露的區域。氧化物半導體層116可以修護氧化物半導體層106在通道區域111缺陷。另外,氧化物半導體層116也可以延伸覆蓋過源極結構110與汲極結構108的表面。之後,保護層112形成在源極結構110與汲極結構108的上方,可以保護電晶體。
另外,關於氧化物半導體層106與氧化物半導體層116所摻雜的硫的濃度是不同,但金屬原子成分可以相同。以IGZO的氧化物半導體為例,其中In/Ga/Zn的原子比例如是4/3/2。
於圖1的實施例,其使用多層的摻雜硫的氧化物半導體層106、116,可以提升通道區域111的品質。然而本發明不限於圖1所示的電晶體結構。以下更舉多個實施例,說明本發明的技術。
圖2是依照本發明一實施例,繪示電晶體剖面結構示意圖。參閱圖2,對於單閘極的電晶體結構,其可以有不同的設計結構。例如,基部(base)的氧化物半導體層122a可以先形成在基板120上。基部氧化物半導體層122a可以摻雜硫或是無需摻雜硫。基部氧化物半導體層122a提供基板120與摻雜硫的氧化物半導體層122b之間的過渡(transition)效用,如此允許氧化物半導體層122b可以較容易形成。實際上,基部氧化物半導體層122a也可以省去。基部氧化物半導體層122a與氧化物半導體層122b整體可以視為摻雜硫的氧化物半導體層122。
源極結構124與汲極結構126形成在氧化物半導體層122的兩端。源極結構124與汲極結構126之間的間隔是要促使氧化物半導體層122在對應此間隔的區域,構成通道區域127。
另一層摻雜硫的氧化物半導體層128接著覆蓋過源極結構(S)124與汲極結構(D)126以及暴露區域的氧化物半導體層122。於此,氧化物半導體層128至少覆蓋暴露區域的氧化物半導體層122,如此可以修復氧化物半導體層122在源極結構124與汲極結構126之間的表面。另外,氧化物半導體層128也可以延伸到源極結構124與汲極結構126的表面。另外,源極結構124與
汲極結構126例如可以採用一般的導電材料即可,例如金屬氮化物,其更例如是TaN。
藉由半導體的製程,閘極絕緣層130的結構例如可以是U形狀的絕緣層。於此實施例,閘極結構(G)138是形成在U形狀的中間空間之內,其底部與側壁是由閘極絕緣層130覆蓋,而頂部沒有被閘極絕緣層130覆蓋。閘極結構138可以是單層結構或是疊層結構。本實施例是以三個疊層為例,包括底部金屬層136、鐵電(Ferroelectrics)層134以及頂部金屬層132。鐵電層134的材料例如是鋯鈦酸鉛(PZT)或是鈦酸鍶鋇(BST)。本發明的閘極結構138與閘極絕緣層130不限於所舉的實施例。
本發明所提出多層摻雜硫的氧化物半導體構成通道區域127,以提升通道區域的性能。本案技術特徵可以廣泛應用到多種電晶體。例如,所提出的通道區域也可以應用到雙閘極(dual-gate)的電晶體。圖3是依照本發明一實施例,繪示電晶體剖面結構示意圖。
參閱圖3,本實施例是雙閘極的電晶體結構。在製造上,在一基板200中先形成背閘極結構202。之後,背閘極絕緣層204形成在背閘極結構202上。背閘極絕緣層204也可以同時覆蓋基板200的其它暴露表面上。摻雜硫的氧化物半導體206形成在背閘極絕緣層204上。於此摻雜硫的氧化物半導體層206包含摻雜硫的氧化物半導體層206b當作通道區域211的主要構成部份。另外,如果需要的話,摻雜硫的氧化物半導體層206可以更包含氧
化物半導體層206a,形成在背閘極絕緣層204上,當作背閘極絕緣層204與氧化物半導體層206b之間的過渡(transition)層,以利於後續氧化物半導體層206b的形成。氧化物半導體層206a可以摻雜硫或是不摻雜硫。另外以IGZO的氧化物半導體為例,氧化物半導體層206a的In/Ga/Zn原子比例例如是1/3/2。也就是說,氧化物半導體層206a可以選擇性的使用,不是必要的構件,是可以忽略的。氧化物半導體層206b以IGZO的材料為例,其In/Ga/Zn原子比例例如是4/3/2,不同於氧化物半導體層206a。
源極結構(S)208與汲極結構(D)210形成於氧化物半導體層206上。氧化物半導體層206在源極結構208與汲極結構210之間的區域是用來構成通道區域211。本發明提出再形成另外的摻雜硫的氧化物半導體214至少覆蓋在氧化物半導體層206的通道區域211上。另外,源極結構208與汲極結構210也可以在其頂表面,依照設計,可以再形成金屬氧化層212於源極結構208與汲極結構210上,但不是必要的構件。
於本發明一實施例,另一層摻雜硫的氧化物半導體層214至少形成於氧化物半導體層206b上,在源極結構208與汲極結構210之間的暴露表面上,其構成通道區域211。氧化物半導體層214例如可以修補通道區域211的暴露表面的缺陷,提升通道區域211的性能(performance)。於一實施例,氧化物半導體層214更可以延伸覆蓋源極結構208與汲極結構210。於一實施例,氧化物半導體層214與氧化物半導體層206(206a)的硫的摻雜濃度可以是不同。
本實施例是以雙閘極電晶體的結構為例,因此另一層閘極絕緣層218會形成在氧化物半導體層214上。之後,閘極結構216形成在閘極絕緣層218上方,其中依實際需要,閘極結構216可以是疊層結構,例如會包含阻障層220。本發明的閘極結構216可以是其它的設計,一般而言,不需要限制於特定結構。閘極結構216相對於背閘極結構202也可以稱為前閘極結構216。
圖3的雙閘極電晶體的結構也不是唯一的方式。本發明也適用於其它的雙閘極電晶體。再舉一實施例,圖4是依照本發明一實施例,繪示電晶體剖面結構示意圖。
參閱圖4,在基板200上先形成背閘極結構202。閘極絕緣層204接著形成於基板200上,覆蓋背閘極結構202。摻雜硫的氧化物半導體層206形成於閘極絕緣層204上。源極結構208與汲極結構210形成在氧化物半導體層206上的兩端。依照實際需要,源極結構208與汲極結構210的底部也可以包含抗氧化層208’、210’,但是本發明不限於所舉實施例。
依照本發明提出的技術,再一層的氧化物半導體層214至少形成在氧化物半導體層206上且在源極結構208與汲極結構210之間對應通道區域211的表面上。如前面的描述,氧化物半導體層214也是摻雜硫,但是硫的摻雜濃度與氧化物半導體層206的硫的摻雜濃度可以不同。氧化物半導體層214也可以延申覆蓋源極結構208與汲極結構210上。
接著,閘極絕緣層218形成在氧化物半導體層214上。
另一個閘極結構222,形成在閘極絕緣層218上,其底部位在源極結構208與汲極結構210之間的通道區域211的上方。閘極結構222可以是單層結構或是疊層結構,無需限制。
再於一實施例,本發明提出雙閘極電晶體的另一種結構。圖5是依照本發明一實施例,繪示電晶體剖面結構示意圖。參閱圖5,在基板200上先形成背閘極結構202。閘極絕緣層204接著形成於基板200上,覆蓋背閘極結構202。摻雜硫的氧化物半導體層206形成於閘極絕緣層202上。源極結構208與汲極結構210形成在氧化物半導體層206上的兩端。
依照本發明提出的技術,再一層的氧化物半導體層214至少形成在氧化物半導體層206上且在源極結構214與汲極結構210之間對應通道區域211的表面上。於本實施例,氧化物半導體層214也可以延申覆蓋源極結構208與汲極結構210,而且延伸到氧化物半導體層206的外側邊,與氧化物半導體層206接觸。如前面的描述,氧化物半導體層214也是摻雜硫,但是硫的摻雜濃度與氧化物半導體層206的硫的摻雜濃度可以不同。氧化物半導體層206主要包括氧化物半導體層206b。而如前述,氧化物半導體層206也可以包含氧化物半導體層206a,其可以摻雜硫或是不摻雜硫,可以提供過度的作用以利於氧化物半導體層206b的形成。
在完成氧化物半導體層206後,閘極絕緣層218形成在氧化物半導體層214上,且閘極絕緣層218的周邊部分會與在背部的閘極絕緣層204合併。另一個閘極結構222形成在對應閘極
絕緣層218上,其位置是相對於源極結構208與汲極結構210之間的通道區域的位置。再者,保護層224可以覆蓋整個電晶體結構,提供保護作用。
本發明也提出製造電晶體結構的方法。圖6是依照本發明一實施例,繪示製造電晶體的方法的流程示意圖。參閱圖6,於一實施例,製造電晶體結構的方法,例如配合圖3或圖4的元件標號,包括步驟S100,其提供結構基板200/202/204/206,具有摻雜硫的第一氧化物半導體層206。於步驟S102,其形成源極結構208與汲極結構210在該第一氧化物半導體層206上,其中該第一氧化物半導體層206在該源極結構208與該汲極結構210之間的通道區域211被暴露。於步驟S104,其形成摻雜硫的第二氧化物半導體層214,至少在該第一氧化物半導體層206的該通道區域211上。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
200‧‧‧基底
202‧‧‧閘極結構
204‧‧‧閘極絕緣層
206、206a、206b‧‧‧氧化物半導體
208‧‧‧源極結構(S)
210‧‧‧汲極結構(D)
211‧‧‧通道區域
212‧‧‧金屬氧化層
214‧‧‧氧化物半導體
216‧‧‧閘極結構
218‧‧‧閘極絕緣層
220‧‧‧阻障層
Claims (19)
- 一種電晶體結構,包括:摻雜硫的第一氧化物半導體層;源極結構與汲極結構,設置在該第一氧化物半導體層上,其中該第一氧化物半導體層在該源極結構與該汲極結構之間的區域構成通道區域;以及摻雜硫的第二氧化物半導體層,至少設置在該第一氧化物半導體層的該通道區域上,其中該第二氧化物半導體覆蓋過該源極結構、該汲極結構該以及該第一氧化物半導體層的該通道區域,其中該電晶體結構更包括:第一閘極絕緣層,在該第二氧化物半導體層上;以及第一閘極結構,設置在該第一閘極絕緣層上,具有一底部區域,位在該源極結構與該汲極結構之間。
- 如申請專利範圍第1項所述的電晶體結構,更包括:閘極絕緣層,設置在該第二氧化物半導體層或是在該第一氧化物半導體層上;以及閘極結構,設置在該閘極絕緣層上,位在該源極結構與該汲極結構之間。
- 如申請專利範圍第1項所述的電晶體結構,其中該第一氧化物半導體層的第一硫濃度不同於該第二氧化物半導體層的第二硫濃度。
- 如申請專利範圍第1項所述的電晶體結構,其中該第一氧化物半導體層的第一厚度大於該第二氧化物半導體層的第二厚度。
- 如申請專利範圍第1項所述的電晶體結構,其中該第一氧化物半導體層與該第二氧化物半導體層的材質包含In-Ga-Zn-O(IGZO)、In-Zn-O(IZO)、In-Ga-O(IGO)、Zn-Sn-O(ZTO)、In-Sn-Zn-O(ITZO)、Hf-In-Zn-O(HIZO)、Al-Zn-Sn-O(AZTO)、Al-Zn-O(AZO)、Ga-Zn-O(GZO)、或是Zn-O(ZO)。
- 如申請專利範圍第1項所述的電晶體結構,其中該第二氧化物半導體層也包含一部份,設置在該源極結構與該汲極結構上,或是更延伸到該源極結構與該汲極結構的外側邊而與該第一氧化物半導體層接觸。
- 如申請專利範圍第1項所述的電晶體結構,其中該源極結構與該汲極結構的每一個包括:金屬層,設置在該第一氧化物半導體層上;以及金屬氧化層,設置在該金屬層的頂部。
- 如申請專利範圍第1項所述的電晶體結構,更包括基部氧化物半導體層在該第一氧化物半導體層上,且是在該第二氧化物半導體的相對邊。
- 如申請專利範圍第1項所述的電晶體結構,更包括:第二閘極絕緣層,覆蓋過於該第一氧化物半導體層,在相對於該第二氧化物半導體層的相反邊;以及 第二閘極結構,設置在該第二閘極絕緣層上。
- 一種製造電晶體結構的方法,包括:提供結構基板,具有摻雜硫的第一氧化物半導體層;形成源極結構與汲極結構在該第一氧化物半導體層上,其中該第一氧化物半導體層在該源極結構與該汲極結構之間的通道區域被暴露;以及形成摻雜硫的第二氧化物半導體層,至少在該第一氧化物半導體層的該通道區域上。
- 如申請專利範圍第10項所述的製造電晶體結構的方法,更包括:形成閘極絕緣層在該第二氧化物半導體層或是在該第一氧化物半導體層上;以及形成閘極結構在該閘極絕緣層上,在該源極結構與該汲極結構之間。
- 如申請專利範圍第10項所述的製造電晶體結構的方法,其中該第一氧化物半導體層的第一硫濃度不同於該第二氧化物半導體層的第二硫濃度。
- 如申請專利範圍第10項所述的製造電晶體結構的方法,其中該第一氧化物半導體層的第一厚度大於該第二氧化物半導體層的第二厚度。
- 如申請專利範圍第10項所述的製造電晶體結構的方法,其中該第一氧化物半導體層與該第二氧化物半導體層的材質 包含In-Ga-Zn-O(IGZO)、In-Zn-O(IZO)、In-Ga-O(IGO)、Zn-Sn-O(ZTO)、In-Sn-Zn-O(ITZO)、Hf-In-Zn-O(HIZO)、Al-Zn-Sn-O(AZTO)、Al-Zn-O(AZO)、Ga-Zn-O(GZO)、或是Zn-O(ZO)。
- 如申請專利範圍第10項所述的製造電晶體結構的方法,其中該第二氧化物半導體層也包含一部份,設置在該源極結構與該汲極結構上。
- 如申請專利範圍第10項所述的製造電晶體結構的方法,對於該源極結構與該汲極結構的每一個,該方法更包括:形成金屬層在該第一氧化物半導體層上;以及形成金屬氧化層在該金屬層的頂部。
- 如申請專利範圍第10項所述的製造電晶體結構的方法,更包括:形成基部氧化物半導體層,在該第一氧化物半導體層上,且是在該第二氧化物半導體的相對邊。
- 如申請專利範圍第10項所述的製造電晶體結構的方法,其中該第二氧化物半導體覆蓋過該源極結構、該汲極結構該以及該第一氧化物半導體層的該通道區域,其中該方法更包括:形成頂閘極絕緣層,在該第一氧化物半導體層上;以及形成頂閘極結構,在該頂閘極絕緣層上,該頂閘極結構具有一底部區域,位在該源極結構與該汲極結構之間。
- 如申請專利範圍第18項所述的製造電晶體結構的方法,提供該結構基板的該步驟包括:形成底閘極結構,於一基板上;形成底閘極絕緣層,覆蓋過該基板與該底閘極結構;以及形成該第一氧化物半導體層,覆蓋過該底閘極絕緣層。
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