TWI717986B - Display panel and manufacturing method thereof - Google Patents

Display panel and manufacturing method thereof Download PDF

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Publication number
TWI717986B
TWI717986B TW109103012A TW109103012A TWI717986B TW I717986 B TWI717986 B TW I717986B TW 109103012 A TW109103012 A TW 109103012A TW 109103012 A TW109103012 A TW 109103012A TW I717986 B TWI717986 B TW I717986B
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emitting diode
light emitting
light
array substrate
pad
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TW109103012A
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Chinese (zh)
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TW202131508A (en
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劉仲展
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友達光電股份有限公司
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Priority to CN202010668719.8A priority patent/CN111883637B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

A display panel including an array substrate, a first light emitting diode, a package, a dielectric layer, and a second light emitting diode is provided. The first light emitting diode is disposed on the array substrate. The package is disposed on the array substrate and covers the first light emitting diode. The first light emitting diode is electrically connected to the array substrate at least through the package. The dielectric layer is disposed on the array substrate and covers the package. The second light emitting diode is disposed on the dielectric layer and is electrically connected to the array substrate. A manufacturing method of a display panel is also provided.

Description

顯示面板及其製造方法Display panel and manufacturing method thereof

本發明是有關於一種面板及其製造方法，且特別是有關於一種顯示面板及其製造方法。 The present invention relates to a panel and a manufacturing method thereof, and more particularly to a display panel and a manufacturing method thereof.

發光二極體(light emitting diode；LED)具有諸如壽命長、體積小、高抗震性、低熱產生及低功率消耗等優點，因此已被廣泛應用於家用及各種設備中的指示器或光源。近年來，發光二極體已朝多色彩及高亮度發展，因此其應用領域已擴展至大型戶外看板、交通號誌燈及相關領域。因此，發光二極體常做為兼具省電及環保功能的主要照明光源。 Light emitting diodes (LEDs) have advantages such as long life, small size, high shock resistance, low heat generation, and low power consumption. Therefore, they have been widely used as indicators or light sources in households and various devices. In recent years, light-emitting diodes have developed toward multi-color and high-brightness, so their application fields have been extended to large outdoor billboards, traffic signs and related fields. Therefore, light-emitting diodes are often used as the main lighting source with both power saving and environmental protection functions.

然而，若顯示面板的發光二極體損壞、失效或效能低落，或顯示面板的製造過程中的疏失操作，常會造成顯示品質的降低。因此，如何提升顯示面板的顯示品質，實已成目前亟欲解決的課題。 However, if the light-emitting diode of the display panel is damaged, fails or has low performance, or negligence during the manufacturing process of the display panel, the display quality will often be reduced. Therefore, how to improve the display quality of the display panel has become an urgent problem to be solved at present.

本發明提供一種顯示面板及其製造方法，可以使顯示面板具有較佳的顯示品質。 The present invention provides a display panel and a manufacturing method thereof, which can make the display panel have better display quality.

本發明的一種顯示面板，其包括陣列基板、第一發光二極體、封裝體、介電層以及第二發光二極體。第一發光二極體配置於陣列基板上。封裝體位於陣列基板上且覆蓋第一發光二極體。第一發光二極體至少藉由封裝體電性連接於陣列基板。介電層位於陣列基板上且覆蓋封裝體。第二發光二極體配置於介電層上電性連接於陣列基板。 A display panel of the present invention includes an array substrate, a first light emitting diode, a packaging body, a dielectric layer, and a second light emitting diode. The first light emitting diode is configured on the array substrate. The package is located on the array substrate and covers the first light emitting diode. The first light emitting diode is electrically connected to the array substrate at least through the package. The dielectric layer is located on the array substrate and covers the package body. The second light emitting diode is disposed on the dielectric layer and electrically connected to the array substrate.

在本發明的一種顯示面板的製造方法包括以下步驟。提供陣列基板。配置第一發光二極體於陣列基板上。形成可固化材料於陣列基板上，以覆蓋第一發光二極體。對部分的可固化材料進行固化步驟，以固化部分的可固化材料，而形成覆蓋第一發光二極體的封裝體。於形成封裝體後，移除未被固化的其餘部分可固化材料。形成介電層於陣列基板上，以覆蓋封裝體及陣列基板。配置第二發光二極體於介電層上，且使第二發光二極體電性連接於陣列基板。 The manufacturing method of a display panel of the present invention includes the following steps. Provide array substrate. The first light emitting diode is arranged on the array substrate. A curable material is formed on the array substrate to cover the first light emitting diode. A curing step is performed on part of the curable material to cure part of the curable material to form a package covering the first light emitting diode. After the package is formed, the remaining part of the curable material that has not been cured is removed. A dielectric layer is formed on the array substrate to cover the package body and the array substrate. The second light emitting diode is arranged on the dielectric layer, and the second light emitting diode is electrically connected to the array substrate.

基於上述，藉由上述的佈線設計、配置方式或製作方式，可以依據損壞、失效、效能低落或製造過程中疏失操作的發光二極體進行修補，而可以使顯示面板具有較佳的顯示品質。 Based on the above, the above-mentioned wiring design, configuration or manufacturing method can be repaired according to the light-emitting diodes that are damaged, failed, low in performance, or negligent in the manufacturing process, so that the display panel can have better display quality.

100、200、300、400:顯示面板 100, 200, 300, 400: display panel

110:陣列基板 110: Array substrate

110a:基板表面 110a: substrate surface

115:基板 115: substrate

117:畫素陣列層 117: pixel array layer

111、111a、111b、111c:第一接墊 111, 111a, 111b, 111c: first pad

112:第二接墊 112: second pad

113:第三接墊 113: third pad

119:絕緣層 119: Insulation layer

120、121、122、123:第一發光二極體 120, 121, 122, 123: the first light-emitting diode

120a:出光頂面 120a: light top surface

139:可固化材料 139: Curable materials

139a:第一可固化部分 139a: The first curable part

139b:第二可固化部分 139b: second curable part

130、138、230:封裝體 130, 138, 230: package body

130a、230a:封裝頂面 130a, 230a: package top surface

130h、230h:封裝高度 130h, 230h: package height

191:界面 191: Interface

192:間距 192: Spacing

193:夾角 193: angle

140、148:介電層 140, 148: Dielectric layer

142、143:介電開口 142, 143: Dielectric opening

140a:介電頂面 140a: Dielectric top surface

140h:介電高度 140h: dielectric height

151、152a、152b:連接線路 151, 152a, 152b: connection lines

160:第二發光二極體 160: second light-emitting diode

360、460:光轉換層 360, 460: light conversion layer

371、471:透明基板 371, 471: Transparent substrate

372、472:封裝層 372, 472: Encapsulation layer

120a、160a:第一電極 120a, 160a: first electrode

120b、160b:第一型半導體層 120b, 160b: first type semiconductor layer

120c、160c:發光區 120c, 160c: luminous area

120d、160d:第二型半導體層 120d, 160d: second type semiconductor layer

120e、160e:第二電極 120e, 160e: second electrode

120f、160f:絕緣層 120f, 160f: insulating layer

SP:子畫素區 SP: Sub-pixel area

81:轉印頭 81: transfer head

圖1A至圖1J是依照本發明的第一實施例的一種顯示面板的部分製造方法的部分剖視示意圖。 1A to 1J are schematic partial cross-sectional views of a part of a manufacturing method of a display panel according to a first embodiment of the present invention.

圖1K是依照本發明的第一實施例的一種顯示面板的部分製造方法的部分上視示意圖。 FIG. 1K is a schematic partial top view of a partial manufacturing method of a display panel according to the first embodiment of the present invention.

圖1L至圖1M是依照本發明的第一實施例的一種顯示面板的部分製造方法的部分立體示意圖。 1L to 1M are partial perspective views of a part of a manufacturing method of a display panel according to the first embodiment of the present invention.

圖2是依照本發明的第二實施例的一種顯示面板的部分剖視示意圖。 2 is a schematic partial cross-sectional view of a display panel according to a second embodiment of the invention.

圖3是依照本發明的第三實施例的一種顯示面板的部分剖視示意圖。 3 is a schematic partial cross-sectional view of a display panel according to a third embodiment of the invention.

圖4是依照本發明的第四實施例的一種顯示面板的部分剖視示意圖。 4 is a schematic partial cross-sectional view of a display panel according to a fourth embodiment of the invention.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。如本領域技術人員將認識到的，可以以各種不同的方式修改所描述的實施例，而不脫離本發明的精神或範圍。 In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various different ways without departing from the spirit or scope of the present invention.

在附圖中，為了清楚起見，放大了各元件等的厚度。在整個說明書中，相同的附圖標記表示相同的元件。應當理解，當諸如層、膜、區域或基板的元件被稱為在“另一元件上”、或“連接到另一元件”、“重疊於另一元件”時，其可以直接在另一元 件上或與另一元件連接，或者中間元件可以也存在。相反，當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時，不存在中間元件。如本文所使用的，“連接”可以指物理及/或電連接。 In the drawings, the thickness of each element and the like are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being “on”, or “connected to,” or “overlapped with, another element,” it may be directly on another element. Or connected to another element, or intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements. As used herein, "connected" can refer to physical and/or electrical connections.

在附圖中，相同或相似之參考號碼表示相同或相似之元件，且可以具有相同或相似的結構、材質、功能或形成方式，以下段落將不再一一贅述。 In the drawings, the same or similar reference numbers indicate the same or similar elements, and may have the same or similar structures, materials, functions or formation methods, and the following paragraphs will not repeat them one by one.

應當理解，儘管術語“第一”、“第二”、“第三”等在本文中可以用於描述各種元件、部件、區域、層及/或部分，但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此，下面討論的“第一元件”、“部件”、“區域”、“層”、或“部分”可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。 It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or parts, these elements, components, regions, and/or Or part should not be restricted by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, the “first element,” “component,” “region,” “layer,” or “portion” discussed below may be referred to as a second element, component, region, layer or portion without departing from the teachings herein.

這裡使用的術語僅僅是為了描述特定實施例的目的，而不是限制性的。如本文所使用的，除非內容清楚地指示，否則單數形式“一”、“一個”和“該”旨在包括複數形式，包括“至少一個”。“或”表示“及/或”。如本文所使用的，術語“及/或”包括一個或多個相關所列項目的任何和所有組合。還應當理解，當在本說明書中使用時，術語“包括”及/或“包括”指定所述特徵、區域、整體、步驟、操作、元件的存在及/或部件，但不排除一個或多個其它特徵、區域整體、步驟、操作、元件、部件 及/或其組合的存在或添加。 The terminology used here is only for the purpose of describing specific embodiments and is not limiting. As used herein, unless the content clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms, including "at least one." "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the related listed items. It should also be understood that when used in this specification, the terms "including" and/or "including" designate the presence of the features, regions, wholes, steps, operations, elements, and/or components, but do not exclude one or more Other features, overall area, steps, operations, elements, parts And/or the presence or addition of a combination thereof.

此外，諸如“下”或“底部”和“上”或“頂部”的相對術語可在本文中用於描述一個元件與另一元件的關係，如圖所示。應當理解，相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如，如果一個附圖中的裝置翻轉，則被描述為在其他元件的“下”側的元件將被定向在其他元件的“上”側。因此，示例性術語“下”可以包括“下”和“上”的取向，取決於附圖的特定取向。類似地，如果一個附圖中的裝置翻轉，則被描述為在其它元件“下方”或“下方”的元件將被定向為在其它元件“上方”。因此，示例性術語“下面”或“下面”可以包括上方和下方的取向。 In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship between one element and another element, as shown in the figure. It should be understood that relative terms are intended to include different orientations of the device other than those shown in the figures. For example, if the device in one figure is turned over, elements described as being on the "lower" side of other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" may include an orientation of "lower" and "upper", depending on the specific orientation of the drawing. Similarly, if the device in one figure is turned over, elements described as "below" or "beneath" other elements will be oriented "above" the other elements. Thus, the exemplary terms "below" or "below" can include an orientation of above and below.

本文使用的“基本上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值，考慮到所討論的測量和與測量相關的誤差的特定數量(即，測量系統的限制)。例如，“約”可以表示在所述值的一個或多個標準偏差內，或±30%、±20%、±10%、±5%內。 As used herein, "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account the measurement in question and the specific amount of error associated with the measurement (ie , Limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%.

除非另有定義，本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是，諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義，並且將不被解釋為理想化的或過度正式的意義，除非本文中明確地這樣定義。 Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of related technologies and the present invention, and will not be interpreted as idealized or excessive The formal meaning, unless explicitly defined as such in this article.

本文參考作為理想化實施例的示意圖的截面圖來描述示例性實施例。因此，可以預期到作為例如製造技術及/或公差的結果的圖示的形狀變化。因此，本文所述的實施例不應被解釋為限於如本文所示的區域的特定形狀，而是包括例如由製造導致的形狀偏差。例如，示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外，所示的銳角可以是圓的。因此，圖中所示的區域本質上是示意性的，並且它們的形狀不是旨在示出區域的精確形狀，並且不是旨在限制權利要求的範圍。 The exemplary embodiments are described herein with reference to cross-sectional views that are schematic diagrams of idealized embodiments. Therefore, a change in the shape of the diagram as a result of, for example, manufacturing technology and/or tolerance can be expected. Therefore, the embodiments described herein should not be interpreted as being limited to the specific shape of the area as shown herein, but include, for example, shape deviations caused by manufacturing. For example, areas shown or described as flat may generally have rough and/or non-linear characteristics. In addition, the acute angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to show the precise shape of the regions, and are not intended to limit the scope of the claims.

圖1A至圖1J是依照本發明的第一實施例的一種顯示面板的部分製造方法的部分剖視示意圖。圖1K是依照本發明的第一實施例的一種顯示面板的部分製造方法的部分上視示意圖。圖1L至圖1M是依照本發明的第一實施例的一種顯示面板的部分製造方法的部分立體示意圖。舉例而言，圖1H可以是對應於圖1K中A-B剖線、B-C剖線以及D-E剖線上的剖視示意圖，且圖1A至圖1G及圖1I至圖1J中的剖視位置例如是對應於圖1H中的剖視位置。 1A to 1J are schematic partial cross-sectional views of a part of a manufacturing method of a display panel according to a first embodiment of the present invention. FIG. 1K is a schematic partial top view of a partial manufacturing method of a display panel according to the first embodiment of the present invention. 1L to 1M are partial perspective views of a part of a manufacturing method of a display panel according to the first embodiment of the present invention. For example, FIG. 1H may be a schematic cross-sectional view corresponding to the AB, BC, and DE cross-sections in FIG. 1K, and the cross-sectional positions in FIGS. 1A to 1G and FIGS. 1I to 1J correspond to Sectional position in Figure 1H.

請參照圖1A，提供陣列基板110。陣列基板110可以包括基板115、畫素陣列層117、第一接墊111以及第二接墊112。舉例而言，畫素陣列層117位於基板115上，第一接墊111以及第二接墊112位於畫素陣列層117上。第一接墊111與第二接墊112可以畫素陣列層117內的電子元件(如：主動元件或導線)電性連接。 1A, an array substrate 110 is provided. The array substrate 110 may include a substrate 115, a pixel array layer 117, a first pad 111 and a second pad 112. For example, the pixel array layer 117 is located on the substrate 115, and the first pad 111 and the second pad 112 are located on the pixel array layer 117. The first pad 111 and the second pad 112 can be electrically connected to electronic components (such as active components or wires) in the pixel array layer 117.

在本實施例中，陣列基板110可以更包括第三接墊113，且第三接墊113可以電性連接於第一接墊111。第三接墊113與第一接墊111之間可以藉由常用的佈線設計(layout)方式而彼此電性連接，故於此不加以詳述或繪示。 In this embodiment, the array substrate 110 may further include a third pad 113, and the third pad 113 may be electrically connected to the first pad 111. The third pad 113 and the first pad 111 can be electrically connected to each other by a common layout method, so it will not be described in detail or shown here.

在本實施例中，陣列基板110可以更包括絕緣層119。絕緣層119可以覆蓋於第一接墊111上，且絕緣層119可以暴露出部分的第一接墊111。在一實施例中，絕緣層119的材質可以包括防焊材質，但本發明不限於此。 In this embodiment, the array substrate 110 may further include an insulating layer 119. The insulating layer 119 may cover the first pad 111, and the insulating layer 119 may expose part of the first pad 111. In an embodiment, the material of the insulating layer 119 may include a solder mask material, but the invention is not limited thereto.

基板115的材質可以為玻璃、石英、有機聚合物或其他適宜的材質，於本發明中並不加以限制。 The material of the substrate 115 can be glass, quartz, organic polymer or other suitable materials, which is not limited in the present invention.

畫素陣列層117內的電子元件可以依據設計上的需求而加以調整，於本發明中並不加以限制。舉例而言，畫素陣列層117可以包括主動元件(未繪示)、被動元件(未繪示)或對應的導線(如：掃描線、資料線或其他類似的訊號線)。又再舉例而言，第一接墊111可以藉由對應的導線與主動元件電性連接，以接收主動元件所傳遞的驅動電壓。再舉例而言，多個第二接墊112之間可以彼此電性連接且電性連接至相同的共電壓源；或是，第二接墊112可以藉由對應的導線與具有相同電壓的共電壓源電性連接。 The electronic components in the pixel array layer 117 can be adjusted according to design requirements, which are not limited in the present invention. For example, the pixel array layer 117 may include active devices (not shown), passive devices (not shown), or corresponding wires (such as scan lines, data lines, or other similar signal lines). For another example, the first pad 111 can be electrically connected to the active device through a corresponding wire to receive the driving voltage transmitted by the active device. For another example, the plurality of second pads 112 may be electrically connected to each other and to the same common voltage source; or, the second pad 112 may be connected to a common voltage source with the same voltage through corresponding wires. The voltage source is electrically connected.

舉例而言，陣列基板110可以具有多個子畫素區SP。各個子畫素區SP具有對應的第一接墊111、第二接墊112以及第三接墊113。各個子畫素區SP中的第一接墊111及第三接墊113可以彼此電性連接，且更可以電性連接至對應的主動元件。並且， 於俯視狀態下(如：垂直於基板表面110a的方向，類似或相似於圖1K所示)，在各個子畫素區SP中，第一接墊111與第二接墊112之間的距離大於第一接墊111與第三接墊113之間的距離。 For example, the array substrate 110 may have a plurality of sub-pixel regions SP. Each sub-pixel area SP has a corresponding first pad 111, a second pad 112, and a third pad 113. The first pad 111 and the third pad 113 in each sub-pixel area SP can be electrically connected to each other, and can also be electrically connected to the corresponding active device. and, In a top view state (eg, a direction perpendicular to the substrate surface 110a, similar or similar to that shown in FIG. 1K), in each sub-pixel area SP, the distance between the first pad 111 and the second pad 112 is greater than The distance between the first pad 111 and the third pad 113.

請參照圖1B，配置第一發光二極體120於陣列基板110上。在本實施例中，並未限定所配置的第一發光二極體120的數量。以圖1B為例，被配置於陣列基板110上的第一發光二極體120的數量為二個，但本發明並不限於此。 1B, the first light emitting diode 120 is disposed on the array substrate 110. In this embodiment, the number of the first light emitting diodes 120 configured is not limited. Taking FIG. 1B as an example, the number of first light emitting diodes 120 arranged on the array substrate 110 is two, but the present invention is not limited to this.

在本實施例中，可以藉由轉置或轉移的方式以將第一發光二極體120配置於陣列基板110上。以圖1K為例，藉由具有轉印頭(print head)81的機台及/或其他適宜的轉置機台，以轉印及/或其他適宜的方式，而將多個第一發光二極體120轉置於陣列基板110上。轉印頭81例如為聚二甲基矽氧烷轉印頭或其他適宜的彈性轉印頭(elastomer print head)，但本發明不限於此。 In this embodiment, the first light emitting diode 120 can be disposed on the array substrate 110 by transposition or transfer. Taking FIG. 1K as an example, by means of a machine with a print head 81 and/or other suitable transposing machines, the plurality of first light-emitting two are transferred by transfer and/or other suitable methods. The pole body 120 is placed on the array substrate 110. The transfer head 81 is, for example, a polydimethylsiloxane transfer head or other suitable elastomer print heads, but the present invention is not limited thereto.

在本實施例中，並未限定預被轉移的第一發光二極體120可以如期地被配置於陣列基板110上。也就是說，預被轉移的第一發光二極體120的數量可以為X個，而如期地被配置於陣列基板110上的第一發光二極體120的數量可以為Y個，且X≧Y。以圖1L至圖1M為例，預被轉移的第一發光二極體120的數量可以為三個(如：第一發光二極體121、第一發光二極體122及第一發光二極體123)，而如期地被配置於陣列基板110上的第一發光二極體120的數量可以為二個(如：第一發光二極體121及第一發光二極體122)。 In this embodiment, it is not limited that the pre-transferred first light emitting diode 120 can be arranged on the array substrate 110 as expected. In other words, the number of first light emitting diodes 120 that are pre-transferred may be X, and the number of first light emitting diodes 120 that are arranged on the array substrate 110 as expected may be Y, and X≧ Y. Taking FIGS. 1L to 1M as an example, the number of first light-emitting diodes 120 that are pre-transferred may be three (for example, the first light-emitting diode 121, the first light-emitting diode 122, and the first light-emitting diode). 123), and the number of the first light-emitting diodes 120 arranged on the array substrate 110 as expected can be two (for example, the first light-emitting diode 121 and the first light-emitting diode 122).

在本實施例中，並未限定預被轉移的第一發光二極體120或已被配置於陣列基板110上的第一發光二極體120為已知合格晶片(known good die；KGD)。也就是說，在一可能的實施例中，第一發光二極體120的其中之一可能會有損壞、失效或效能低落的狀況。舉例來說，第一發光二極體122可能會有損壞、失效或效能低落的狀況。 In this embodiment, the pre-transferred first light-emitting diode 120 or the first light-emitting diode 120 that has been arranged on the array substrate 110 is not limited to be a known good die (KGD). In other words, in a possible embodiment, one of the first light emitting diodes 120 may be damaged, failed, or have low performance. For example, the first light emitting diode 122 may be damaged, failed, or low in performance.

在本實施例中，可以在第一發光二極體120與第一接墊111之間形成連接線路151。以使第一發光二極體120與第一接墊111可以相連接。在一實施例中，連接線路151的材質可以包括焊料，但本發明不限於此。 In this embodiment, a connection line 151 may be formed between the first light emitting diode 120 and the first pad 111. So that the first light emitting diode 120 and the first pad 111 can be connected. In an embodiment, the material of the connection line 151 may include solder, but the present invention is not limited to this.

在本實施例中，第一發光二極體120可以為垂直式(vertical)發光二極體。舉例而言，第一發光二極體120可以包括第一電極120a、第一型半導體層120b、發光區120c、第二型半導體層120d、第二電極120e以及絕緣層120f。發光區120c位於第一型半導體層120b以及第二型半導體層120d之間。第一電極120a位於第一型半導體層120b上(以圖1B的方向為例，第一電極120a位於第一型半導體層120b的上方)且電性連接至第一型半導體層120b。第二電極120e位於第二型半導體層120d上(以圖1B的方向為例，第二電極120e位於第二型半導體層120d的下方)且電性連接至第二型半導體層120d。絕緣層120f覆蓋第一電極120a、第一型半導體層120b、發光區120c、第二型半導體層120d以及第二電極120e，且絕緣層120f可以暴露出部分的第一電 極120a及部分的第二電極120e。藉由調整發光區120c的材料、組成、結構或參雜濃度，可以使第一發光二極體120具有對應的可發光顏色。如此一來，在將垂直式的第一發光二極體120連接於連接線路151上之後，具有第一發光二極體120於其上的第一接墊111基本上可以較不容易地被暴露在外。舉例而言，在將垂直式的第一發光二極體120連接於連接線路151上之後，具有第一發光二極體121於其上的第一接墊111a及具有第一發光二極體122於其上的第一接墊111b基本上可以較不容易地被暴露在外。 In this embodiment, the first light emitting diode 120 may be a vertical light emitting diode. For example, the first light emitting diode 120 may include a first electrode 120a, a first type semiconductor layer 120b, a light emitting region 120c, a second type semiconductor layer 120d, a second electrode 120e, and an insulating layer 120f. The light emitting region 120c is located between the first type semiconductor layer 120b and the second type semiconductor layer 120d. The first electrode 120a is located on the first type semiconductor layer 120b (taking the direction of FIG. 1B as an example, the first electrode 120a is located above the first type semiconductor layer 120b) and is electrically connected to the first type semiconductor layer 120b. The second electrode 120e is located on the second type semiconductor layer 120d (taking the direction of FIG. 1B as an example, the second electrode 120e is located below the second type semiconductor layer 120d) and is electrically connected to the second type semiconductor layer 120d. The insulating layer 120f covers the first electrode 120a, the first type semiconductor layer 120b, the light emitting region 120c, the second type semiconductor layer 120d, and the second electrode 120e, and the insulating layer 120f may expose part of the first electrical The pole 120a and part of the second electrode 120e. By adjusting the material, composition, structure, or doping concentration of the light-emitting region 120c, the first light-emitting diode 120 can have a corresponding light-emitting color. In this way, after the vertical first light-emitting diode 120 is connected to the connection line 151, the first pad 111 with the first light-emitting diode 120 thereon can basically be less easily exposed outer. For example, after the vertical first light-emitting diode 120 is connected to the connection line 151, the first pad 111a having the first light-emitting diode 121 thereon and the first light-emitting diode 122 The first pad 111b thereon can basically be less easily exposed to the outside.

請參照圖1C，形成可固化材料139於陣列基板110上，以覆蓋第一發光二極體120。可固化材料139具有導電性，且可固化材料139例如可以藉由照光或加熱的方式而被固化。 1C, a curable material 139 is formed on the array substrate 110 to cover the first light emitting diode 120. The curable material 139 has conductivity, and the curable material 139 can be cured by irradiation or heating, for example.

在一實施例中，可固化材料139可以為負光阻(negative resist)材料。舉例而言，可固化材料139可以包括奈米銀線(silver nanowire)、奈米銀粒子(silver nanoparticle)、奈米銀管(silver nanotube)、奈米金線(gold nanowire)、奈米碳管(carbon nanotube)、石墨烯(graphene)或其他適宜的導電材料。並且，可以依據可固化材料139的特性，將特定波長或亮度的光照射於可固化材料139，而可以使可固化材料139被固化。 In an embodiment, the curable material 139 may be a negative resist material. For example, the curable material 139 may include silver nanowire, silver nanoparticle, silver nanotube, gold nanowire, carbon nanotube (carbon nanotube), graphene (graphene) or other suitable conductive materials. Also, according to the characteristics of the curable material 139, the curable material 139 may be irradiated with light of a specific wavelength or brightness, and the curable material 139 may be cured.

在本實施例中，可固化材料139可以連接第一發光二極體120及第二接墊112，且可固化材料139不電性連接具有第一發光二極體120於其上的第一接墊111。舉例而言，可固化材料139不電性連接第一接墊111a及第一接墊111b。 In this embodiment, the curable material 139 can be connected to the first light emitting diode 120 and the second pad 112, and the curable material 139 is not electrically connected to the first connection having the first light emitting diode 120 thereon.垫111. For example, the curable material 139 is not electrically connected to the first pad 111a and the first pad 111b.

在本實施例中，若配置於陣列基板110上的第一發光二極體120為良品晶片(good die)，且第一發光二極體120與第一接墊111之間具有良好的電性連接，且第一發光二極體120與第二接墊112之間具有良好的電性連接，則藉由對陣列基板110第一發光二極體120通電，應該可以使第一發光二極體120發光。 In this embodiment, if the first light emitting diode 120 disposed on the array substrate 110 is a good die, and there is good electrical property between the first light emitting diode 120 and the first pad 111 Connection, and there is a good electrical connection between the first light-emitting diode 120 and the second pad 112, by energizing the first light-emitting diode 120 of the array substrate 110, it should be possible to make the first light-emitting diode 120 120 glow.

請參照圖1C至圖1D，對部分的可固化材料139進行固化步驟，以固化部分的可固化材料139，而形成覆蓋第一發光二極體120的封裝體138。封裝體138具有導電性。也就是說，封裝體138為導體。 1C to 1D, a curing step is performed on part of the curable material 139 to cure part of the curable material 139 to form a package 138 covering the first light emitting diode 120. The package body 138 has conductivity. In other words, the package 138 is a conductor.

舉例而言，可固化材料139可以包括第一可固化部分139a(標示於圖1C)以及第二可固化部分139b(標示於圖1C)，其中第一可固化部分139a位於第二可固化部分139b與第一發光二極體121之間，且第一可固化部分139a至少覆蓋第一發光二極體121及與前述第一發光二極體121最接近的第二接墊112。配置於陣列基板110上的第一發光二極體121可以為良品晶片，且第一發光二極體121與第一接墊111a之間具有良好的電性連接，且第一發光二極體121與最接近於其的第二接墊112之間具有良好的電性連接。因此，藉由陣列基板110對第一發光二極體121通電，可以使第一發光二極體121發光。如此一來，可以使覆蓋於第一發光二極體121的第一可固化部分139a被固化，而形成共形覆蓋於第一發光二極體121的封裝體138。 For example, the curable material 139 may include a first curable part 139a (marked in FIG. 1C) and a second curable part 139b (marked in FIG. 1C), wherein the first curable part 139a is located in the second curable part 139b Between the first light-emitting diode 121 and the first curable portion 139a at least covers the first light-emitting diode 121 and the second pad 112 closest to the first light-emitting diode 121. The first light-emitting diode 121 disposed on the array substrate 110 may be a good chip, and there is a good electrical connection between the first light-emitting diode 121 and the first pad 111a, and the first light-emitting diode 121 There is a good electrical connection with the second pad 112 closest to it. Therefore, by energizing the first light emitting diode 121 by the array substrate 110, the first light emitting diode 121 can emit light. In this way, the first curable portion 139a covering the first light emitting diode 121 can be cured to form a package 138 covering the first light emitting diode 121 conformally.

又舉例而言，若配置於陣列基板110上的第一發光二極 體122為非良品晶片(not good die；NG die)，或第一發光二極體122與第一接墊111b之間不具有良好的電性連接，或第一發光二極體122與第二接墊112之間不具有良好的電性連接。則縱使對陣列基板110通電，也無法致能(enable)第一發光二極體122發出預期的光。如此一來，覆蓋於第一發光二極體122周圍的可固化材料139則不會被固化。 For another example, if the first light emitting diode disposed on the array substrate 110 The body 122 is a not good die (NG die), or there is no good electrical connection between the first light-emitting diode 122 and the first pad 111b, or the first light-emitting diode 122 and the second There is no good electrical connection between the pads 112. Even if the array substrate 110 is energized, the first light emitting diode 122 cannot be enabled to emit the expected light. In this way, the curable material 139 covering the first light emitting diode 122 will not be cured.

再舉例而言，在部分的第一接墊111c上，若沒有被配置第一發光二極體(例如：由於在前述的轉移過程中的疏失操作(miss operation；MO)，而未將欲配置於第一接墊111c上的第一發光二極體123配置於其上)，則未有第一發光二極體(因無，故於繪示及標示)配置於其上的第一接墊111c上方的可固化材料139不會被固化。 For another example, if the first light-emitting diode is not configured on part of the first pad 111c (for example, due to the miss operation (MO) in the aforementioned transfer process), it is not configured to be configured. The first light-emitting diode 123 on the first pad 111c is disposed thereon), and the first light-emitting diode is not (they are shown and marked because it is not) disposed on the first pad The curable material 139 above 111c will not be cured.

請參照圖1D至圖1E，於形成封裝體138後，移除未被固化的其餘部分可固化材料139b。舉例而言，可以藉由蝕刻的方式移除未被固化的第二可固化部分139b(標示於圖1D)。 1D to 1E, after the package body 138 is formed, the remaining portion of the curable material 139b that is not cured is removed. For example, the uncured second curable portion 139b (marked in FIG. 1D) can be removed by etching.

在移除未被固化的其餘部分可固化材料139b之後，可發出預期的光的第一發光二極體121的一端(如：具有第二電極120e的一端)可以藉由第一接墊111a電性連接陣列基板110，且可發出預期的光的第一發光二極體121的另一端(如：具有第一電極120a的一端)可以藉由具有導電性的封裝體138以及第二接墊112電性連接陣列基板110。 After removing the remaining portion of the curable material 139b that has not been cured, one end of the first light emitting diode 121 (such as the end with the second electrode 120e) that can emit the expected light can be electrically connected through the first pad 111a. The other end of the first light-emitting diode 121 (such as the end with the first electrode 120a) that is electrically connected to the array substrate 110 and can emit expected light can be connected to the conductive package 138 and the second pad 112 The array substrate 110 is electrically connected.

在本實施例中，於移除未被固化的其餘部分可固化材料 139b之後，封裝體138基本上不與第三接墊113電性連接。 In this embodiment, the remaining part of the curable material that has not been cured is removed After 139b, the package body 138 is basically not electrically connected to the third pad 113.

請參照圖1F，形成介電層140於陣列基板110上，以覆蓋封裝體138及陣列基板110。 1F, a dielectric layer 140 is formed on the array substrate 110 to cover the package body 138 and the array substrate 110.

介電層148的材料可以包含無機材料(例如：氧化矽、氮化矽、氮氧化矽、其他適宜的材料、或上述至少二種材料的堆疊層)、有機材料或其他適宜的介電材料。以無機的介電材料為例，可以藉由沉積製程或其他適宜的製程在陣列基板110上形成。以有機的介電材料為例，可以藉由塗佈法、黏合法、溶膠凝膠法(Sol-Gel method)或壓合法或其他適宜的製程在陣列基板110上形成。 The material of the dielectric layer 148 may include inorganic materials (for example, silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a stacked layer of at least two of the foregoing materials), organic materials, or other suitable dielectric materials. Taking an inorganic dielectric material as an example, it can be formed on the array substrate 110 by a deposition process or other suitable processes. Taking an organic dielectric material as an example, it can be formed on the array substrate 110 by a coating method, a bonding method, a Sol-Gel method, a pressing method, or other suitable processes.

請參照圖1F至圖1G，在本實施例中，可以藉由平坦化製程(planarization process)，而使封裝體130的封裝頂面130a與介電層140的介電頂面140a共平面(coplanar)。也就是說，介電層140的厚度可以較介電層140的厚度薄，且封裝體130的厚度可以較封裝體138的厚度薄，但介電層140的材質或性質基本上相同或相似於介電層148，且封裝體130的材質或性質基本上相同或相似於封裝體138。平坦化製程例如可以包括蝕刻製程(etching process)、拋光製程(polishing process)或研磨製程(grinding process)。但值得注意的是，本發明並未限定需進行前述的平坦化製程。 1F to FIG. 1G, in this embodiment, the package top surface 130a of the package body 130 and the dielectric top surface 140a of the dielectric layer 140 can be coplanar (coplanar ). That is, the thickness of the dielectric layer 140 may be thinner than that of the dielectric layer 140, and the thickness of the package body 130 may be thinner than that of the package body 138, but the material or properties of the dielectric layer 140 are substantially the same or similar to The dielectric layer 148 and the material or properties of the package body 130 are substantially the same or similar to the package body 138. The planarization process may include, for example, an etching process, a polishing process, or a grinding process. However, it should be noted that the present invention does not limit the need to perform the aforementioned planarization process.

在本實施例中，第一發光二極體120具有出光頂面120a(即，第一發光二極體120最遠離基板表面110a的表面)與封裝 頂面130a之間具有間距192。也就是說，在經由上述的平坦化製程之後，可發出預期的光的第一發光二極體120的另一端(如：具有第一電極120a的一端)仍可以藉由具有導電性的封裝體130以及第二接墊112電性連接陣列基板110。 In this embodiment, the first light emitting diode 120 has a light emitting top surface 120a (that is, the surface of the first light emitting diode 120 farthest from the substrate surface 110a) and a package There is a gap 192 between the top surfaces 130a. That is to say, after the above-mentioned planarization process, the other end of the first light emitting diode 120 (such as the end with the first electrode 120a) that can emit the expected light can still be used by the package with conductivity 130 and the second pad 112 are electrically connected to the array substrate 110.

在一實施例中，在經由上述的平坦化製程之後，封裝體130的封裝高度130h(如：封裝體130的封裝頂面130a與陣列基板110的基板表面110a之間的距離)與介電層140的介電高度140h(如：介電層140的介電頂面140a與陣列基板110的基板表面110a之間的距離)基本上可以相同。 In one embodiment, after the above-mentioned planarization process, the package height 130h of the package body 130 (such as the distance between the package top surface 130a of the package body 130 and the substrate surface 110a of the array substrate 110) and the dielectric layer The dielectric height 140h of 140 (for example, the distance between the dielectric top surface 140a of the dielectric layer 140 and the substrate surface 110a of the array substrate 110) may be substantially the same.

在一實施例中，封裝體130與介電層140可以相接觸。也就是說，封裝體130與介電層140之間具有界面191。並且，由於形成封裝體130的光固化步驟中，是藉由其所覆蓋的第一發光二極體120所發出的光而不是藉由外界的光。因此，封裝體130基本上可以共形覆蓋於第一發光二極體120，且使界面191與介電頂面140a之間的夾角193小於90°。 In an embodiment, the package body 130 and the dielectric layer 140 may be in contact. In other words, there is an interface 191 between the package body 130 and the dielectric layer 140. Moreover, in the light curing step of forming the package body 130, the light emitted by the first light emitting diode 120 covered by the package body 130 is used instead of external light. Therefore, the package body 130 can basically cover the first light emitting diode 120 conformally, and the angle 193 between the interface 191 and the dielectric top surface 140a is less than 90°.

請參照圖1H及圖1K，配置第二發光二極體160於介電層140上，且第二發光二極體160基本上不接觸封裝體130的封裝頂面130a。 1H and 1K, the second light emitting diode 160 is disposed on the dielectric layer 140, and the second light emitting diode 160 does not substantially contact the package top surface 130a of the package body 130.

在本實施例中，第二發光二極體160可以與部分的第一接墊111b重疊，其中在第一接墊111b上的第一發光二極體122至少不與第二接墊112電性連接。 In this embodiment, the second light-emitting diode 160 may overlap part of the first pad 111b, and the first light-emitting diode 122 on the first pad 111b is at least not electrically connected to the second pad 112. connection.

在本實施例中，第二發光二極體160可以與部分的第一 接墊111c重疊，其中在第一接墊111c上可以不具有相同或相似於第一發光二極體121或第一發光二極體122的第一發光二極體(因無，故無繪示或標示)。 In this embodiment, the second light-emitting diode 160 can be combined with part of the first The pads 111c overlap, and the first pad 111c may not have the same or similar first light-emitting diode 121 or the first light-emitting diode 122 (they are not shown because there is no Or mark).

在本實施例中，在垂直於基板表面110a的方向上，第二發光二極體160與基板表面110a之間的最小距離大於第一發光二極體120與基板表面110a之間的最大距離。 In this embodiment, in the direction perpendicular to the substrate surface 110a, the minimum distance between the second light emitting diode 160 and the substrate surface 110a is greater than the maximum distance between the first light emitting diode 120 and the substrate surface 110a.

請參照圖1I至圖1J，使第二發光二極體160電性連接於陣列基板110。 Please refer to FIGS. 1I to 1J to electrically connect the second light-emitting diode 160 to the array substrate 110.

舉例而言，如圖1I所示，可以藉由顯影、蝕刻、鑽孔或其他適宜的製程，以在介電層140上形成暴露出第二接墊112的介電開口142以及暴露出第三接墊113的介電開口143。之後，如圖1J所示，在暴露出第二接墊112及第三接墊113之後，可以在介電層140上形成多個連接線路152a、152b。連接線路152a、152b可以覆蓋第二發光二極體160的一端、介電層140的部分介電頂面140a、介電開口142的側壁以及第二接墊112，以使第二發光二極體160的一端可以與第二接墊112電性連接。連接線路152b可以覆蓋第二發光二極體160的另一端、介電層140的部分介電頂面140a、介電開口143的側壁以及第三接墊113，以使第二發光二極體160的另一端可以與第三接墊113電性連接。 For example, as shown in FIG. 1I, development, etching, drilling, or other suitable processes may be used to form a dielectric opening 142 exposing the second pad 112 on the dielectric layer 140 and to expose the third The dielectric opening 143 of the pad 113. Then, as shown in FIG. 1J, after the second pad 112 and the third pad 113 are exposed, a plurality of connection lines 152a and 152b may be formed on the dielectric layer 140. The connection lines 152a and 152b can cover one end of the second light-emitting diode 160, part of the dielectric top surface 140a of the dielectric layer 140, the sidewall of the dielectric opening 142, and the second pad 112, so that the second light-emitting diode One end of 160 can be electrically connected to the second pad 112. The connection line 152b may cover the other end of the second light emitting diode 160, a part of the dielectric top surface 140a of the dielectric layer 140, the sidewall of the dielectric opening 143 and the third pad 113, so that the second light emitting diode 160 The other end of can be electrically connected to the third pad 113.

在本實施例中，第二發光二極體160可以為水平式發光二極體。舉例而言，第二發光二極體160可以包括第一電極160a、第一型半導體層160b、發光區160c、第二型半導體層160d、第二 電極160e以及絕緣層160f。發光區160c位於第一型半導體層160b以及第二型半導體層160d之間。第一電極160a位於第一型半導體層160b上(以圖1H的方向為例，第一電極160a位於第一型半導體層160b的上方)且電性連接至第一型半導體層160b。第二電極160e位於第二型半導體層160d上(以圖1H的方向為例，第二電極160e位於第二型半導體層160d的上方)且電性連接至第二型半導體層160d。絕緣層160f至少覆蓋第一電極160a、第一型半導體層160b、發光區160c以及第二型半導體層160d，且絕緣層160f可以暴露出部分的第一電極160a。藉由調整發光區160c的材料、組成、結構或參雜濃度，可以使第二發光二極體160具有對應的可發光顏色。如此一來，可以在連接線路152a或連接線路152b的佈線設計或製作上較為簡單。 In this embodiment, the second light emitting diode 160 may be a horizontal light emitting diode. For example, the second light emitting diode 160 may include a first electrode 160a, a first type semiconductor layer 160b, a light emitting region 160c, a second type semiconductor layer 160d, and a second type semiconductor layer 160b. The electrode 160e and the insulating layer 160f. The light emitting region 160c is located between the first type semiconductor layer 160b and the second type semiconductor layer 160d. The first electrode 160a is located on the first type semiconductor layer 160b (take the direction of FIG. 1H as an example, the first electrode 160a is located above the first type semiconductor layer 160b) and is electrically connected to the first type semiconductor layer 160b. The second electrode 160e is located on the second type semiconductor layer 160d (taking the direction of FIG. 1H as an example, the second electrode 160e is located above the second type semiconductor layer 160d) and is electrically connected to the second type semiconductor layer 160d. The insulating layer 160f covers at least the first electrode 160a, the first type semiconductor layer 160b, the light emitting region 160c, and the second type semiconductor layer 160d, and the insulating layer 160f may expose a part of the first electrode 160a. By adjusting the material, composition, structure, or doping concentration of the light-emitting region 160c, the second light-emitting diode 160 can have a corresponding light-emitting color. In this way, the wiring design or production of the connection line 152a or the connection line 152b can be relatively simple.

經過上述步驟後即可大致上完成本實施例之顯示面板100的製作。 After the above steps, the manufacturing of the display panel 100 of this embodiment can be roughly completed.

請參照圖1J，顯示面板100可以包括陣列基板110、第一發光二極體120、封裝體130、介電層140以及第二發光二極體160。第一發光二極體120配置於陣列基板110上。封裝體130位於陣列基板110上且覆蓋第一發光二極體120。第一發光二極體120至少藉由封裝體130電性連接於陣列基板110。介電層140位於陣列基板110上且覆蓋封裝體130。第二發光二極體160配置於介電層140上電性連接於陣列基板110。 1J, the display panel 100 may include an array substrate 110, a first light emitting diode 120, a package body 130, a dielectric layer 140, and a second light emitting diode 160. The first light emitting diode 120 is disposed on the array substrate 110. The package body 130 is located on the array substrate 110 and covers the first light emitting diode 120. The first light emitting diode 120 is electrically connected to the array substrate 110 through at least the package body 130. The dielectric layer 140 is located on the array substrate 110 and covers the package body 130. The second light emitting diode 160 is disposed on the dielectric layer 140 and electrically connected to the array substrate 110.

圖2是依照本發明的第二實施例的顯示面板的部分剖視 示意圖。在本實施例中，顯示面板200的製造方法與顯示面板100的製造方法相似，其類似的構件以相同的標號表示，且具有類似的功能、材質或形成方式，並省略描述。 2 is a partial cross-sectional view of a display panel according to a second embodiment of the invention Schematic. In this embodiment, the manufacturing method of the display panel 200 is similar to the manufacturing method of the display panel 100, and similar components are denoted by the same reference numerals, and have similar functions, materials, or formation methods, and descriptions are omitted.

請參照圖2，顯示面板200可以包括陣列基板110、第一發光二極體120、封裝體230、介電層140以及第二發光二極體160。封裝體230位於陣列基板110上且覆蓋第一發光二極體120。第一發光二極體120至少藉由封裝體230電性連接於陣列基板110。介電層140位於陣列基板110上且覆蓋封裝體230。封裝體230的材質或形成方式與前述實施例中的封裝體230的材質或形成方式相同或相似，差別在於：封裝體230的封裝高度230h(如：封裝體230的封裝頂面230a與陣列基板110的基板表面110a之間的距離)大於介電層140的介電高度140h(如：介電層140的介電頂面140a與陣列基板110的基板表面110a之間的距離)。 Please refer to FIG. 2, the display panel 200 may include an array substrate 110, a first light emitting diode 120, a package body 230, a dielectric layer 140 and a second light emitting diode 160. The package body 230 is located on the array substrate 110 and covers the first light emitting diode 120. The first light emitting diode 120 is electrically connected to the array substrate 110 at least through the package 230. The dielectric layer 140 is located on the array substrate 110 and covers the package body 230. The material or forming method of the package body 230 is the same as or similar to that of the package body 230 in the foregoing embodiment. The difference is: the package height 230h of the package body 230 (for example, the package top surface 230a of the package body 230 and the array substrate The distance between the substrate surfaces 110a of the 110 is greater than the dielectric height 140h of the dielectric layer 140 (for example, the distance between the dielectric top surface 140a of the dielectric layer 140 and the substrate surface 110a of the array substrate 110).

圖3是依照本發明的第三實施例的顯示面板的部分剖視示意圖。在本實施例中，顯示面板300的製造方法與顯示面板100的製造方法相似，其類似的構件以相同的標號表示，且具有類似的功能、材質或形成方式，並省略描述。 3 is a schematic partial cross-sectional view of a display panel according to a third embodiment of the invention. In this embodiment, the manufacturing method of the display panel 300 is similar to the manufacturing method of the display panel 100, and similar components are denoted by the same reference numerals, and have similar functions, materials, or formation methods, and descriptions are omitted.

請參照圖3，顯示面板300可以包括陣列基板110、第一發光二極體120、封裝體130、介電層140、第二發光二極體160以及光轉換層360。第一發光二極體120或第二發光二極體160位於光轉換層360與陣列基板110之間。 3, the display panel 300 may include an array substrate 110, a first light emitting diode 120, a package body 130, a dielectric layer 140, a second light emitting diode 160, and a light conversion layer 360. The first light emitting diode 120 or the second light emitting diode 160 is located between the light conversion layer 360 and the array substrate 110.

光轉換層360的材質可以包括量子點(quantum dot， QD)、上轉換(upconversion)材料或下轉換(downconversion)材料中的一種或多種。光轉換層360可吸收第一發光二極體120或第二發光二極體160所放出的光，且放出不同於第一發光二極體120或第二發光二極體160的發光顏色的其他顏色的光。 The material of the light conversion layer 360 may include quantum dots (quantum dots, QD), one or more of upconversion materials or downconversion materials. The light conversion layer 360 can absorb the light emitted by the first light-emitting diode 120 or the second light-emitting diode 160, and emit light other than the light-emitting color of the first light-emitting diode 120 or the second light-emitting diode 160 Color of light.

在一實施例中，光轉換層360可以是多個或多種光轉換材料的堆疊層，但本發明不限於此。 In an embodiment, the light conversion layer 360 may be a stacked layer of multiple or multiple light conversion materials, but the present invention is not limited thereto.

在一實施例中，位於不同位置的光轉換層360的結構、材質或組成可以不同。如此一來，可以藉由多個具有不同結構、材質或組成的光轉換層360而使顯示面板300在不同的區域可以具有不同的發光顏色。 In an embodiment, the structure, material, or composition of the light conversion layer 360 at different positions may be different. In this way, the display panel 300 can have different light-emitting colors in different regions by using a plurality of light conversion layers 360 with different structures, materials or compositions.

在本實施例中，第一發光二極體120或第二發光二極體160可以為藍光發光二極體或紫外光發光二極體，但本發明不限於此。 In this embodiment, the first light emitting diode 120 or the second light emitting diode 160 may be a blue light emitting diode or an ultraviolet light emitting diode, but the invention is not limited thereto.

在本實施例中，顯示面板300可以更包括透明基板371以及封裝層372。光轉換層360可以位於透明基板371與第一發光二極體120或第二發光二極體160之間。封裝層372可以位於透明基板371與介電層140之間。 In this embodiment, the display panel 300 may further include a transparent substrate 371 and an encapsulation layer 372. The light conversion layer 360 may be located between the transparent substrate 371 and the first light emitting diode 120 or the second light emitting diode 160. The encapsulation layer 372 may be located between the transparent substrate 371 and the dielectric layer 140.

圖4是依照本發明的第四實施例的顯示面板400的部分剖視示意圖。在本實施例中，顯示面板400的製造方法與顯示面板300的製造方法相似，其類似的構件以相同的標號表示，且具有類似的功能、材質或形成方式，並省略描述。 4 is a schematic partial cross-sectional view of a display panel 400 according to a fourth embodiment of the invention. In this embodiment, the manufacturing method of the display panel 400 is similar to the manufacturing method of the display panel 300, and similar components thereof are denoted by the same reference numerals, and have similar functions, materials, or formation methods, and description is omitted.

請參照圖4，顯示面板400可以包括陣列基板110、第一 發光二極體120、封裝體130、介電層140、第二發光二極體160以及光轉換層460。陣列基板110位於光轉換層460與第一發光二極體120之間；或是，陣列基板110位於光轉換層460與第二發光二極體160之間。 4, the display panel 400 may include an array substrate 110, a first The light emitting diode 120, the package body 130, the dielectric layer 140, the second light emitting diode 160, and the light conversion layer 460. The array substrate 110 is located between the light conversion layer 460 and the first light emitting diode 120; or, the array substrate 110 is located between the light conversion layer 460 and the second light emitting diode 160.

光轉換層460的結構、材質或組成可以相同或相似於前述實施例的光轉換層360的結構、材質或組成，故於此不加以贅述。 The structure, material, or composition of the light conversion layer 460 can be the same or similar to the structure, material, or composition of the light conversion layer 360 in the foregoing embodiment, so it will not be repeated here.

在本實施例中，顯示面板400可以更包括透明基板471以及封裝層472。光轉換層460可以位於透明基板471與陣列基板110之間。封裝層372可以位於透明基板471與陣列基板110之間。 In this embodiment, the display panel 400 may further include a transparent substrate 471 and an encapsulation layer 472. The light conversion layer 460 may be located between the transparent substrate 471 and the array substrate 110. The encapsulation layer 372 may be located between the transparent substrate 471 and the array substrate 110.

綜上所述，藉由上述的佈線設計、配置方式或製作方式，可以依據損壞、失效、效能低落或製造過程中疏失操作的發光二極體進行修補，而可以使顯示面板具有較佳的顯示品質。 In summary, through the above-mentioned wiring design, configuration or manufacturing method, it can be repaired according to the light-emitting diodes that are damaged, invalid, low in performance, or negligent operation in the manufacturing process, so that the display panel can have a better display. quality.

100:顯示面板 100: display panel

110:陣列基板 110: Array substrate

110a:基板表面 110a: substrate surface

115:基板 115: substrate

117:畫素陣列層 117: pixel array layer

111、111a、111b、111c:第一接墊 111, 111a, 111b, 111c: first pad

112:第二接墊 112: second pad

113:第三接墊 113: third pad

120、121、122:第一發光二極體 120, 121, 122: the first light-emitting diode

130:封裝體 130: package body

140:介電層 140: Dielectric layer

152a、152b:連接線路 152a, 152b: connection line

160:第二發光二極體 160: second light-emitting diode

Claims (12)

一種顯示面板，包括：一陣列基板；一第一發光二極體，配置於該陣列基板上；一封裝體，位於該陣列基板上且覆蓋該第一發光二極體，且該第一發光二極體至少藉由該封裝體電性連接於該陣列基板；一介電層，位於該陣列基板上且覆蓋該封裝體；以及一第二發光二極體，配置於該介電層上電性連接於該陣列基板，其中該封裝體為導體。 A display panel includes: an array substrate; a first light emitting diode disposed on the array substrate; a package body located on the array substrate and covering the first light emitting diode, and the first light emitting diode The pole body is electrically connected to the array substrate at least through the package body; a dielectric layer is located on the array substrate and covers the package body; and a second light emitting diode is disposed on the dielectric layer electrically Connected to the array substrate, wherein the package body is a conductor. 如請求項1所述的顯示面板，其中該陣列基板具有多個子畫素區，該陣列基板於各個該些子畫素區包括一第一接墊、一第二接墊以及一第三接墊，其中：於各個該些子畫素區中，該第一接墊電性連接於該第三接墊，且該第一接墊與該第二接墊之間的距離大於該第一接墊與該第三接墊之間的距離；該第一發光二極體電性連接於該些子畫素區的其中之一的該第一接墊與該第二接墊；且該第二發光二極體電性連接於該些子畫素區的其中另一的該第三接墊與該第二接墊。 The display panel according to claim 1, wherein the array substrate has a plurality of sub-pixel areas, and the array substrate includes a first pad, a second pad, and a third pad in each of the sub-pixel areas , Wherein: in each of the sub-pixel regions, the first pad is electrically connected to the third pad, and the distance between the first pad and the second pad is greater than the first pad The distance from the third pad; the first light emitting diode is electrically connected to the first pad and the second pad of one of the sub-pixel regions; and the second light emitting diode The diode is electrically connected to the third pad and the second pad of the other of the sub-pixel regions. 如請求項1所述的顯示面板，其中該第一發光二極體為垂直式發光二極體，或該第二發光二極體為水平式發光二極體。 The display panel according to claim 1, wherein the first light-emitting diode is a vertical light-emitting diode, or the second light-emitting diode is a horizontal light-emitting diode. 如請求項3所述的顯示面板，其中該第一發光二極體為垂直式發光二極體，且該第二發光二極體為水平式發光二極體。 The display panel according to claim 3, wherein the first light emitting diode is a vertical light emitting diode, and the second light emitting diode is a horizontal light emitting diode. 如請求項1所述的顯示面板，其中：該封裝體與該介電層之間具有一界面；該介電層具有一介電頂面；且該界面與該介電頂面之間的夾角小於90°。 The display panel according to claim 1, wherein: there is an interface between the package and the dielectric layer; the dielectric layer has a dielectric top surface; and the angle between the interface and the dielectric top surface Less than 90°. 如請求項1所述的顯示面板，其中：該封裝體具有一封裝高度；該介電層具有一介電高度；且該封裝高度大於或等於該介電高度。 The display panel according to claim 1, wherein: the package body has a package height; the dielectric layer has a dielectric height; and the package height is greater than or equal to the dielectric height. 如請求項1所述的顯示面板，其中：該封裝體具有一封裝頂面；該第一發光二極體具有一出光頂面；該封裝頂面與該出光頂面之間具有一間距。 The display panel according to claim 1, wherein: the package body has a package top surface; the first light emitting diode has a light emitting top surface; and there is a gap between the package top surface and the light emitting top surface. 如請求項1所述的顯示面板，其中該第一發光二極體或該第二發光二極體為藍光發光二極體或紫外光發光二極體。 The display panel according to claim 1, wherein the first light emitting diode or the second light emitting diode is a blue light emitting diode or an ultraviolet light emitting diode. 如請求項1所述的顯示面板，更包括：一光轉換層，其中：該第一發光二極體或該第二發光二極體位於該光轉換層與該陣列基板之間；或該陣列基板位於該光轉換層與該第一發光二極體之間，或該陣列基板位於該光轉換層與該第二發光二極體之間。 The display panel according to claim 1, further comprising: a light conversion layer, wherein: the first light-emitting diode or the second light-emitting diode is located between the light conversion layer and the array substrate; or the array The substrate is located between the light conversion layer and the first light emitting diode, or the array substrate is located between the light conversion layer and the second light emitting diode. 一種顯示面板的製造方法，包括：提供一陣列基板；配置一第一發光二極體於該陣列基板上；形成一可固化材料於該陣列基板上，以覆蓋該第一發光二極體；對部分的該可固化材料進行一固化步驟，以固化部分的該可固化材料，而形成覆蓋該第一發光二極體的一封裝體，其中該封裝體為導體；於形成該封裝體後，移除未被固化的其餘部分該可固化材料；形成一介電層於該陣列基板上，以覆蓋該封裝體及該陣列基板；以及配置一第二發光二極體於該介電層上，且使該第二發光二極體電性連接於該陣列基板。 A method for manufacturing a display panel includes: providing an array substrate; arranging a first light emitting diode on the array substrate; forming a curable material on the array substrate to cover the first light emitting diode; Part of the curable material undergoes a curing step to cure part of the curable material to form a package covering the first light emitting diode, wherein the package is a conductor; after forming the package, move Except for the remaining part of the curable material that is not cured; forming a dielectric layer on the array substrate to cover the package and the array substrate; and disposing a second light-emitting diode on the dielectric layer, and The second light emitting diode is electrically connected to the array substrate. 如請求項10所述的顯示面板的製造方法，其中該固化步驟包括對電性連接於該陣列基板的該第一發光二極體通電，以使該第一發光二極體發光。 The method for manufacturing a display panel according to claim 10, wherein the curing step includes energizing the first light-emitting diode electrically connected to the array substrate to make the first light-emitting diode emit light. 如請求項10所述的顯示面板的製造方法，其中該可固化材料為負光阻材料。 The method for manufacturing a display panel according to claim 10, wherein the curable material is a negative photoresist material.
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