TWI714387B - Pulse sensing device - Google Patents

Pulse sensing device Download PDF

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TWI714387B
TWI714387B TW108144954A TW108144954A TWI714387B TW I714387 B TWI714387 B TW I714387B TW 108144954 A TW108144954 A TW 108144954A TW 108144954 A TW108144954 A TW 108144954A TW I714387 B TWI714387 B TW I714387B
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electrode
passive electrode
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pulse sensing
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TW202122037A (en
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許清華
黃仲欽
張倚涵
江旻謙
徐文斌
謝昊倫
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友達光電股份有限公司
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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/48—Other medical applications
    • A61B5/4854—Diagnosis based on concepts of traditional oriental medicine
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
    • A61B2562/02—Details of sensors specially adapted for in-vivo measurements

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Abstract

A pulse sensing device including a substrate, a plurality of active devices, a plurality of active electrodes, a first passive electrode, a second passive electrode and a plurality of bonding pads is provided. The substrate has an active region and a bonding region. The active devices and the active electrodes are disposed in the active region. The active electrodes are electrically connected to the active devices, respectively. The first passive electrode and the second passive electrode are respectively disposed on two opposite sides of at least part of the active electrodes. The bonding pads are disposed in the bonding region. The active devices, the first passive electrode and the second passive electrode are electrically connected to the bonding pads, respectively.

Description

脈搏感測元件Pulse sensing element

本發明是有關於一種脈搏量測技術，且特別是有關於一種脈搏感測元件。The present invention relates to a pulse measurement technology, and particularly relates to a pulse sensing element.

中醫師在看診時，是以「望、聞、問、切」等四個步驟進行，其中「切」即為脈診。進行脈診時，中醫師通常是藉由觸診的方式感受受診者的脈象（即：脈搏的狀態）。然而，由於透過觸診所獲知的脈象並無法轉換成可量化的資訊，故中醫師僅能藉由自身的經驗來判斷脈象。也因此，診斷結果較容易受中醫師的主觀因素影響，且在經驗的傳承上也較為困難。When a Chinese medicine doctor sees a doctor, he takes the four steps of "looking, smelling, asking, and cutting", among which "cutting" is pulse diagnosis. When performing pulse diagnosis, traditional Chinese medicine practitioners usually feel the patient's pulse condition (that is, the state of pulse) by palpating. However, since the pulse condition obtained through contact with the clinic cannot be converted into quantifiable information, the Chinese medicine practitioner can only judge the pulse condition based on his own experience. Therefore, the diagnosis result is more susceptible to the subjective factors of traditional Chinese medicine practitioners, and it is more difficult to pass on experience.

為了解決脈象量化的問題，設有壓力感測元件的脈診器應運而生，且此類的脈診器對於脈象的位、數、形、勢之量測已有顯著的進展。近年來，中西醫整合醫療的發展逐漸受到重視。雖然脈診器可提供圖像化的脈象資訊，但對於西方現代醫學所講求的科學化數據仍稍嫌不足。因此，如何從中醫的脈診方式取得更多的科學化數據，為整合中國傳統醫學與西方現代醫學的重要一環。In order to solve the problem of quantification of pulse conditions, pulse diagnostic devices equipped with pressure sensing elements have emerged, and this type of pulse diagnostic devices have made significant progress in measuring the position, number, shape, and potential of pulse conditions. In recent years, the development of integrated Chinese and Western medicine has gradually received attention. Although the pulse diagnostic device can provide graphical pulse information, it still lacks the scientific data required by modern western medicine. Therefore, how to obtain more scientific data from the pulse diagnosis method of traditional Chinese medicine is an important part of integrating traditional Chinese medicine with modern western medicine.

本發明提供一種脈搏感測元件，適於同時量測動脈血管的脈壓分佈與脈波訊號。The present invention provides a pulse sensing element, which is suitable for simultaneously measuring the pulse pressure distribution and pulse wave signal of arterial blood vessels.

本發明的脈搏感測元件，包括基板、多個主動元件、多個主動電極、第一被動電極、第二被動電極以及多個接墊。基板具有主動區與接合區。多個主動元件與多個主動電極設置於主動區。這些主動電極分別電性連接這些主動元件。第一被動電極與第二被動電極分別設置於至少部分主動電極的相對兩側。多個接墊設置於接合區。多個主動元件、第一被動電極與第二被動電極分別電性連接於這些接墊。The pulse sensing device of the present invention includes a substrate, a plurality of active devices, a plurality of active electrodes, a first passive electrode, a second passive electrode, and a plurality of pads. The substrate has an active area and a bonding area. A plurality of active elements and a plurality of active electrodes are arranged in the active area. The active electrodes are respectively electrically connected to the active components. The first passive electrode and the second passive electrode are respectively arranged on opposite sides of at least part of the active electrode. A plurality of pads are arranged in the bonding area. A plurality of active components, a first passive electrode and a second passive electrode are electrically connected to the pads, respectively.

在本發明的一實施例中，上述的脈搏感測元件的第一被動電極與第二被動電極分別設置於主動區的相對兩側。In an embodiment of the present invention, the first passive electrode and the second passive electrode of the above-mentioned pulse sensing element are respectively disposed on opposite sides of the active area.

在本發明的一實施例中，上述的脈搏感測元件，更包括重疊設置於多個主動電極、第一被動電極與第二被動電極的壓電材料層。這些主動電極、第一被動電極與第二被動電極位於基板與壓電材料層之間。In an embodiment of the present invention, the above-mentioned pulse sensing element further includes a piezoelectric material layer arranged on the multiple active electrodes, the first passive electrode and the second passive electrode. The active electrode, the first passive electrode and the second passive electrode are located between the substrate and the piezoelectric material layer.

在本發明的一實施例中，上述的脈搏感測元件，更包括多條第一訊號線、多條第二訊號線以及屏蔽電極。多條第一訊號線與多條第二訊號線排列於主動區，且多個主動元件透過這些第一訊號線與這些第二訊號線電性連接於部分接墊，且這些第一訊號線相交於這些第二訊號線。屏蔽電極重疊設置於多個主動元件、多個第一訊號線與多個第二訊號線。In an embodiment of the present invention, the above-mentioned pulse sensing device further includes a plurality of first signal lines, a plurality of second signal lines, and a shield electrode. A plurality of first signal lines and a plurality of second signal lines are arranged in the active area, and a plurality of active components are electrically connected to some of the pads through the first signal lines and the second signal lines, and the first signal lines intersect On these second signal lines. The shielding electrode is overlapped and arranged on a plurality of active components, a plurality of first signal lines and a plurality of second signal lines.

在本發明的一實施例中，上述的脈搏感測元件的屏蔽電極位於多個主動元件與壓電材料層之間。In an embodiment of the present invention, the shield electrode of the above-mentioned pulse sensing element is located between the multiple active elements and the piezoelectric material layer.

在本發明的一實施例中，上述的脈搏感測元件的多個主動電極位於屏蔽電極與多個主動元件之間。屏蔽電極具有重疊於這些主動電極的多個開口。In an embodiment of the present invention, the multiple active electrodes of the above-mentioned pulse sensing device are located between the shield electrode and the multiple active devices. The shield electrode has a plurality of openings overlapping the active electrodes.

在本發明的一實施例中，上述的脈搏感測元件的屏蔽電極位於主動元件與主動電極之間。屏蔽電極具有開口，且主動電極透過開口而電性連接於主動元件。In an embodiment of the present invention, the shield electrode of the above-mentioned pulse sensing element is located between the active element and the active electrode. The shield electrode has an opening, and the active electrode is electrically connected to the active element through the opening.

在本發明的一實施例中，上述的脈搏感測元件，更包括異方性導電膠層，設置於壓電材料層與多個主動電極之間，且電性連接於壓電材料層。In an embodiment of the present invention, the aforementioned pulse sensing element further includes an anisotropic conductive adhesive layer, which is disposed between the piezoelectric material layer and the plurality of active electrodes, and is electrically connected to the piezoelectric material layer.

在本發明的一實施例中，上述的脈搏感測元件的第一被動電極、第二被動電極與多個主動電極屬於同一膜層。In an embodiment of the present invention, the first passive electrode, the second passive electrode and the multiple active electrodes of the above-mentioned pulse sensing element belong to the same film layer.

在本發明的一實施例中，上述的脈搏感測元件，更包括第三被動電極。主動區具有彼此分離開來的第一子區與第二子區，且第三被動電極位於第一子區與第二子區之間。In an embodiment of the present invention, the aforementioned pulse sensing element further includes a third passive electrode. The active region has a first subregion and a second subregion separated from each other, and the third passive electrode is located between the first subregion and the second subregion.

在本發明的一實施例中，上述的脈搏感測元件，更包括第四被動電極。主動區還具有與第一子區及第二子區分離開來的第三子區，且第四被動電極位於第二子區與第三子區之間。In an embodiment of the present invention, the above-mentioned pulse sensing element further includes a fourth passive electrode. The active region also has a third subregion separated from the first subregion and the second subregion, and the fourth passive electrode is located between the second subregion and the third subregion.

在本發明的一實施例中，上述的脈搏感測元件，更包括排列於主動區的多條第一訊號線與多條第二訊號線。這些第一訊號線相交於這些第二訊號線。多個主動元件透過這些第一訊號線與這些第二訊號線電性連接於部分接墊。第一被動電極與第二被動電極重疊於對應的部分第一訊號線。In an embodiment of the present invention, the above-mentioned pulse sensing element further includes a plurality of first signal lines and a plurality of second signal lines arranged in the active area. These first signal lines intersect with these second signal lines. A plurality of active components are electrically connected to some of the pads through the first signal lines and the second signal lines. The first passive electrode and the second passive electrode overlap the corresponding part of the first signal line.

在本發明的一實施例中，上述的脈搏感測元件，更包括設置於主動區的第三被動電極。第三被動電極位於第一被動電極與第二被動電極之間，且重疊於對應的另一條第一訊號線。In an embodiment of the present invention, the aforementioned pulse sensing element further includes a third passive electrode disposed in the active area. The third passive electrode is located between the first passive electrode and the second passive electrode, and overlaps with another corresponding first signal line.

在本發明的一實施例中，上述的脈搏感測元件，更包括屏蔽電極，重疊設置於部分主動元件、部分第一訊號線與這些第二訊號線。第一被動電極、第二被動電極與屏蔽電極屬於同一膜層。In an embodiment of the present invention, the above-mentioned pulse sensing element further includes a shielding electrode, which is overlapped and arranged on part of the active element, part of the first signal line and these second signal lines. The first passive electrode, the second passive electrode and the shielding electrode belong to the same film layer.

基於上述，在本發明一實施例的脈搏感測元件中，用以量測脈搏之脈壓的主動區設有多個主動元件與多個主動電極，並透過設置在此主動區之相對兩側的兩被動電極，即時取得脈搏的脈波訊號，可進一步實現脈搏感測元件的科學化量測，有助於中西醫整合醫療的發展。Based on the above, in the pulse sensing element of an embodiment of the present invention, the active area for measuring the pulse pressure of the pulse is provided with a plurality of active elements and a plurality of active electrodes, and is arranged on opposite sides of the active area The two passive electrodes can obtain the pulse signal of the pulse in real time, which can further realize the scientific measurement of the pulse sensor element, which is helpful to the development of integrated Chinese and Western medicine.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

本文使用的「約」、「近似」、「本質上」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值，考慮到所討論的測量和與測量相關的誤差的特定數量（即，測量系統的限制）。例如，「約」可以表示在所述值的一個或多個標準偏差內，或例如±30%、±20%、±15%、±10%、±5%內。再者，本文使用的「約」、「近似」、「本質上」、或「實質上」可依量測性質、切割性質或其它性質，來選擇較可接受的偏差範圍或標準偏差，而可不用一個標準偏差適用全部性質。As used herein, "approximately", "approximately", "essentially", or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account all The measurement in question and the specific number of errors associated with the measurement (ie, the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or, for example, within ±30%, ±20%, ±15%, ±10%, ±5%. Furthermore, "about", "approximately", "essentially", or "substantially" used in this article can be based on measurement properties, cutting properties, or other properties to select a more acceptable deviation range or standard deviation. Not one standard deviation applies to all properties.

在附圖中，為了清楚起見，放大了層、膜、面板、區域等的厚度。應當理解，當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時，其可以直接在另一元件上或與另一元件連接，或者中間元件可以也存在。相反，當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時，不存在中間元件。如本文所使用的，「連接」可以指物理及/或電性連接。再者，「電性連接」可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements. As used herein, "connection" can refer to physical and/or electrical connection. Furthermore, "electrical connection" can mean that there are other components between the two components.

此外，諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係，如圖所示。應當理解，相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如，如果一個附圖中的裝置翻轉，則被描述為在其它元件的「下」側的元件將被定向在其它元件的「上」側。因此，示例性術語「下」可以包括「下」和「上」的取向，取決於附圖的特定取向。類似地，如果一個附圖中的裝置翻轉，則被描述為在其它元件「下方」或「下方」的元件將被定向為在其它元件「上方」。因此，示例性術語「上面」或「下面」可以包括上方和下方的取向。In addition, relative terms such as "lower" or "bottom" and "upper" or "top" can be used herein to describe the relationship between one element and another element, as shown in the figure. It should be understood that relative terms are intended to include different orientations of the device other than those shown in the figures. For example, if the device in one figure is turned over, elements described as being on the "lower" side of other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" may include an orientation of "lower" and "upper", depending on the specific orientation of the drawing. Similarly, if the device in one figure is turned over, elements described as "below" or "below" other elements will be oriented "above" the other elements. Thus, the exemplary terms "above" or "below" can include an orientation of above and below.

現將詳細地參考本發明的示範性實施方式，示範性實施方式的實例說明於所附圖式中。只要有可能，相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, and examples of the exemplary embodiments are illustrated in the accompanying drawings. Whenever possible, the same component symbols are used in the drawings and descriptions to indicate the same or similar parts.

圖1是本發明的第一實施例的脈搏感測元件的俯視示意圖。圖2是圖1的脈搏感測元件的局部區域的放大示意圖。圖3是圖2的脈搏感測元件的剖面示意圖。圖3對應於圖1的剖線A-A’以及圖2的剖線B-B’。圖4是圖1的脈搏感測元件應用於人體脈搏量測時的示意圖。圖5是利用圖1的脈搏感測元件所量測到的脈波圖。圖6是圖5的脈波訊號經快速傅立葉轉換後的頻譜圖。需說明的是，為清楚呈現與說明起見，圖1省略了圖2的屏蔽電極150的繪示；圖1及圖2省略了圖3的緩衝層110、閘絕緣層120、層間絕緣層130、平坦層140、異方性導電膠層160與壓電材料層170的繪示；圖4省略了圖1的感測單元SU、訊號線SL1、訊號線SL2、周邊走線PL1、周邊走線PL2、周邊走線PL3與接墊200的繪示。Fig. 1 is a schematic top view of a pulse sensing element according to a first embodiment of the present invention. Fig. 2 is an enlarged schematic diagram of a partial area of the pulse sensing element of Fig. 1. Fig. 3 is a schematic cross-sectional view of the pulse sensing element of Fig. 2. Fig. 3 corresponds to the section line A-A' of Fig. 1 and the section line B-B' of Fig. 2. FIG. 4 is a schematic diagram of the pulse sensing element of FIG. 1 when it is applied to human pulse measurement. Fig. 5 is a pulse wave diagram measured by the pulse sensing element of Fig. 1. Fig. 6 is a spectrum diagram of the pulse signal of Fig. 5 after fast Fourier transform. It should be noted that, for clarity of presentation and description, FIG. 1 omits the drawing of the shield electrode 150 of FIG. 2; FIG. 1 and FIG. 2 omits the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130 of FIG. 3 , Flat layer 140, anisotropic conductive adhesive layer 160 and piezoelectric material layer 170; Figure 4 omits the sensing unit SU, signal line SL1, signal line SL2, peripheral wiring PL1, and peripheral wiring of Figure 1 PL2, peripheral traces PL3 and pads 200 are shown.

請參照圖1及圖2，脈搏感測元件10包括基板100、多個感測單元SU、多條第一訊號線SL1與多條第二訊號線SL2。基板100具有主動區AR與接合區BR。多個感測單元SU、多條第一訊號線SL1與多條第二訊號線SL2設置於基板100的主動區AR。在本實施例中，多個感測單元SU可陣列排列於基板100上，且各自電性連接於對應的一條第一訊號線SL1與對應的一條第二訊號線SL2。多條第一訊號線SL1相交於多條第二訊號線SL2。舉例而言，這些第一訊號線SL1可沿方向X排列於基板100上，且在方向Y上延伸；這些第二訊號線SL2可沿方向Y排列於基板100上，且在方向X上延伸。1 and 2, the pulse sensing device 10 includes a substrate 100, a plurality of sensing units SU, a plurality of first signal lines SL1 and a plurality of second signal lines SL2. The substrate 100 has an active area AR and a bonding area BR. A plurality of sensing units SU, a plurality of first signal lines SL1 and a plurality of second signal lines SL2 are disposed in the active area AR of the substrate 100. In this embodiment, a plurality of sensing units SU may be arranged in an array on the substrate 100, and each is electrically connected to a corresponding first signal line SL1 and a corresponding second signal line SL2. The plurality of first signal lines SL1 intersect with the plurality of second signal lines SL2. For example, the first signal lines SL1 may be arranged on the substrate 100 along the direction X and extend in the direction Y; the second signal lines SL2 may be arranged on the substrate 100 along the direction Y and extend in the direction X.

基於導電性的考量，第一訊號線SL1及第二訊號線SL2的材料一般是使用金屬材料。然而，本發明不限於此，根據其他實施例，第一訊號線SL1及第二訊號線SL2也可使用其他導電材料，例如：合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。在本實施例中，基板100例如是軟性基板，且軟性基板的材質可包括聚醯亞胺（polyimide，PI）、聚對苯二甲酸乙二酯（polyethylene terephthalate，PET）與聚碳酸酯（polycarbonate，PC），但本發明不以此為限。在其他實施例中，基板100的材質也可包括玻璃、石英、或其他適合的有機聚合物。Based on the consideration of conductivity, the materials of the first signal line SL1 and the second signal line SL2 are generally metal materials. However, the present invention is not limited to this. According to other embodiments, the first signal line SL1 and the second signal line SL2 may also use other conductive materials, such as alloys, nitrides of metallic materials, oxides of metallic materials, and metallic materials. Nitrogen oxide, or other suitable materials, or stacked layers of metal materials and other conductive materials. In this embodiment, the substrate 100 is, for example, a flexible substrate, and the material of the flexible substrate may include polyimide (PI), polyethylene terephthalate (PET), and polycarbonate (polycarbonate). , PC), but the present invention is not limited to this. In other embodiments, the material of the substrate 100 may also include glass, quartz, or other suitable organic polymers.

在本實施例中，第一訊號線SL1例如是掃描線（scan line），第二訊號線SL2例如是感測線（sensing line）。當閘極信號經由第一訊號線SL1傳遞至感測單元SU時，感測單元SU被致能而使接收到的感測訊號經由第二訊號線SL2傳遞至接合區BR。值得一提的是，脈搏感測元件10可用以量測人體的生理信號，例如脈搏的脈壓、心率與血流速度。舉例來說，受測者USR可將具有三個脈搏感測元件10的脈診器1貼附於手腕的動脈（例如橈動脈）血管BV上，且這三個脈搏感測元件10分別位於手腕的寸部、關部以及尺部上（如圖4所示）。如此一來，即可透過脈診器1取得受測者USR的脈象（例如脈壓分佈）與脈波訊號。In this embodiment, the first signal line SL1 is, for example, a scan line, and the second signal line SL2 is, for example, a sensing line. When the gate signal is transmitted to the sensing unit SU via the first signal line SL1, the sensing unit SU is enabled so that the received sensing signal is transmitted to the junction area BR via the second signal line SL2. It is worth mentioning that the pulse sensor 10 can be used to measure physiological signals of the human body, such as pulse pressure, heart rate, and blood flow velocity. For example, the subject USR can attach the pulse diagnostic device 1 with three pulse sensing elements 10 to the artery (such as the radial artery) blood vessel BV of the wrist, and the three pulse sensing elements 10 are respectively located on the wrist. On the inch part, off part and ruler part (as shown in Figure 4). In this way, the pulse condition (such as pulse pressure distribution) and pulse wave signal of the subject's USR can be obtained through the pulse diagnostic device 1.

需說明的是，此處脈診器1的脈搏感測元件10數量係以三個為例進行示範性地說明，並不表示本發明以圖式揭示內容為限制。在其他實施例中，脈診器的脈搏感測元件10數量也可根據施測範圍而調整為兩個或四個。以下將針對脈搏感測元件10用於獲取上述生理信號的結構組成與其相對的配置關係作進一步說明。It should be noted that the number of pulse sensing elements 10 of the pulse diagnostic device 1 here is illustrated by taking three as an example, which does not mean that the present invention is limited by the content of the diagram. In other embodiments, the number of pulse sensing elements 10 of the pulse detector can also be adjusted to two or four according to the measurement range. The structural composition of the pulse sensing element 10 for acquiring the physiological signal and the relative configuration relationship will be further described below.

請參照圖2及圖3，感測單元SU包括主動元件T1與主動電極AE。主動元件T1電性連接於第一訊號線SL1與第二訊號線SL2。詳細而言，主動元件T1具有半導體圖案SC、源極S、汲極D以及閘極G。閘極G電性連接於第一訊號線SL1。源極S與汲極D分別電性連接於第二訊號線SL2與主動電極AE。脈搏感測元件10更包括配置於半導體圖案SC與閘極G之間的閘絕緣層120。在本實施例中，主動元件T1的閘極G可選擇性地配置在半導體圖案SC的上方，以形成頂部閘極型薄膜電晶體（top-gate TFT），但本發明並不以此為限。另一方面，脈搏感測元件10還可選擇性地包括緩衝層110，設置於主動元件T1與基板100之間。2 and 3, the sensing unit SU includes an active element T1 and an active electrode AE. The active device T1 is electrically connected to the first signal line SL1 and the second signal line SL2. In detail, the active device T1 has a semiconductor pattern SC, a source S, a drain D, and a gate G. The gate G is electrically connected to the first signal line SL1. The source S and the drain D are electrically connected to the second signal line SL2 and the active electrode AE, respectively. The pulse sensing device 10 further includes a gate insulating layer 120 disposed between the semiconductor pattern SC and the gate electrode G. In this embodiment, the gate G of the active device T1 can be selectively disposed above the semiconductor pattern SC to form a top-gate TFT, but the invention is not limited to this . On the other hand, the pulse sensing device 10 may also optionally include a buffer layer 110 disposed between the active device T1 and the substrate 100.

舉例而言，半導體圖案SC可包括源極區SR、輕摻雜源極區LSR、通道區CH、輕摻雜汲極區LDR以及汲極區DR，輕摻雜源極區LSR位於源極區SR與通道區CH之間，輕摻雜汲極區LDR位於通道區CH與汲極區DR之間，且閘極G重疊於半導體圖案SC的通道區CH，但本發明並不以此為限。根據其他的實施例，半導體圖案SC僅包括源極區SR、通道區CH及汲極區DR。For example, the semiconductor pattern SC may include a source region SR, a lightly doped source region LSR, a channel region CH, a lightly doped drain region LDR, and a drain region DR. The lightly doped source region LSR is located in the source region. Between the SR and the channel region CH, the lightly doped drain region LDR is located between the channel region CH and the drain region DR, and the gate G overlaps the channel region CH of the semiconductor pattern SC, but the present invention is not limited to this . According to other embodiments, the semiconductor pattern SC only includes the source region SR, the channel region CH, and the drain region DR.

進一步而言，脈搏感測元件10更包括層間絕緣層130，配置於閘絕緣層120上，並覆蓋主動元件T1的閘極G與第一訊號線SL1。主動元件T1的源極S與汲極D配置在層間絕緣層130上，且分別重疊於半導體圖案SC的不同兩區。具體而言，閘絕緣層120與層間絕緣層130具有分別重疊於源極區SR與汲極區DR的兩通孔，分別為通孔125a與通孔125b，且主動元件T1的源極S與汲極D分別填入通孔125a與通孔125b以電性連接半導體圖案SC。Furthermore, the pulse sensing device 10 further includes an interlayer insulating layer 130 disposed on the gate insulating layer 120 and covering the gate G of the active device T1 and the first signal line SL1. The source S and the drain D of the active device T1 are disposed on the interlayer insulating layer 130 and overlap with two different regions of the semiconductor pattern SC, respectively. Specifically, the gate insulating layer 120 and the interlayer insulating layer 130 have two through holes respectively overlapping the source region SR and the drain region DR, which are respectively a through hole 125a and a through hole 125b, and the source S of the active device T1 and The drain electrode D is respectively filled into the through hole 125a and the through hole 125b to electrically connect the semiconductor pattern SC.

在本實施例中，半導體圖案SC的材質例如是低溫多晶矽（low temperature poly-silicon，LTPS）半導體，也就是說，主動元件T1可以是低溫多晶矽薄膜電晶體（LTPS TFT）。然而，本發明不限於此，在其他實施例中，主動元件也可以是非晶矽薄膜電晶體（Amorphous Silicon TFT，a-Si TFT）、微晶矽薄膜電晶體（micro-Si TFT）或金屬氧化物電晶體（Metal Oxide Transistor）。舉例而言，主動電極AE於基板100上的垂直投影輪廓為矩形，但本發明不以此為限。在其他實施例中，主動電極AE於基板100上的垂直投影輪廓也可以是正方形或其他適合的形狀。另一方面，主動電極AE、源極S與汲極D的材質可選擇性地相同；也就是說，主動電極AE、源極S與汲極D可屬於同一膜層，但本發明不以此為限。In this embodiment, the material of the semiconductor pattern SC is, for example, a low temperature poly-silicon (LTPS) semiconductor, that is, the active device T1 may be a low temperature poly-silicon thin film transistor (LTPS TFT). However, the present invention is not limited to this. In other embodiments, the active device may also be an amorphous silicon thin film transistor (a-Si TFT), a micro-Si TFT or a metal oxide thin film transistor. Material Transistor (Metal Oxide Transistor). For example, the vertical projection profile of the active electrode AE on the substrate 100 is rectangular, but the invention is not limited to this. In other embodiments, the vertical projection profile of the active electrode AE on the substrate 100 may also be a square or other suitable shapes. On the other hand, the materials of the active electrode AE, the source S, and the drain D can be selectively the same; that is, the active electrode AE, the source S, and the drain D can belong to the same film layer, but the present invention does not use this Is limited.

需說明的是，閘極G、源極S、汲極D、緩衝層110、閘絕緣層120及層間絕緣層130分別可由任何所屬技術領域中具有通常知識者所周知的用於主動元件陣列基板的任一閘極、任一源極、任一汲極、任一緩衝層、任一閘絕緣層及任一層間絕緣層來實現，且閘極G、源極S、汲極D、緩衝層110、閘絕緣層120及層間絕緣層130分別可藉由任何所屬技術領域中具有通常知識者所周知的任一方法來形成，故於此不加以贅述。It should be noted that the gate G, the source S, the drain D, the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130 can be used for active device array substrates, respectively, which are well known to those with ordinary knowledge in the art. Any gate, any source, any drain, any buffer layer, any gate insulating layer, and any interlayer insulating layer are implemented, and the gate G, source S, drain D, buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130 can be respectively formed by any method well known to those having ordinary knowledge in the art, so they will not be repeated here.

請參照圖1及圖4，脈搏感測元件10更包括第一被動電極PE1與第二被動電極PE2。第一被動電極PE1與第二被動電極PE2分別設置於主動區AR的相對兩側。特別說明的是，兩被動電極與主動區AR的排列方向係取決於欲檢測的動脈血管的血流方向。舉例來說，在本實施例中，第一被動電極PE1與第二被動電極PE2可分別設置於主動區AR沿方向X排列的相對兩側。當脈搏感測元件10貼附於受測者SUR的手腕上時，其動脈（例如橈動脈）血管BV中的血流方向大致上平行於兩被動電極與主動區AR的排列方向（即方向X）。如此一來，即可透過兩被動電極量測到脈波訊號的時間差，並分析出血流速度與心率。1 and 4, the pulse sensing element 10 further includes a first passive electrode PE1 and a second passive electrode PE2. The first passive electrode PE1 and the second passive electrode PE2 are respectively disposed on opposite sides of the active area AR. In particular, the arrangement direction of the two passive electrodes and the active area AR depends on the blood flow direction of the arterial vessel to be detected. For example, in this embodiment, the first passive electrode PE1 and the second passive electrode PE2 may be disposed on opposite sides of the active area AR along the direction X, respectively. When the pulse sensing element 10 is attached to the wrist of the subject SUR, the blood flow direction in the artery (such as the radial artery) blood vessel BV is substantially parallel to the arrangement direction of the two passive electrodes and the active area AR (ie direction X ). In this way, the time difference of the pulse signal can be measured through the two passive electrodes, and the blood flow velocity and heart rate can be analyzed.

特別說明的是，為了取得完整的脈象以及較強的脈波訊號，第一被動電極PE1、第二被動電極PE2與主動區AR各自在方向Y上的長度可大於受測者USR的動脈血管BV在垂直於方向X上的寬度（如圖4所示）。在本實施例中，被動電極於基板100上的垂直投影輪廓為長條狀的矩形，但本發明不以此為限。在其他實施例中，被動電極於基板100上的垂直投影輪廓也可根據實際的設計需求（例如高訊噪比、微型化）而調整為適合的外形。In particular, in order to obtain a complete pulse condition and a strong pulse wave signal, the length of each of the first passive electrode PE1, the second passive electrode PE2, and the active area AR in the direction Y can be greater than the arterial vessel BV of the subject's USR The width perpendicular to the direction X (as shown in Figure 4). In this embodiment, the vertical projection profile of the passive electrode on the substrate 100 is a long rectangle, but the invention is not limited to this. In other embodiments, the vertical projection profile of the passive electrode on the substrate 100 can also be adjusted to a suitable shape according to actual design requirements (such as high signal-to-noise ratio, miniaturization).

請參照圖2及圖3，在本實施例中，被動電極（例如第二被動電極PE2）與主動電極AE的材質可選擇性地相同；也就是說，被動電極與主動電極AE可屬於同一膜層。然而，本發明不限於此，根據其他實施例，被動電極與主動電極AE也可分別屬於不同的膜層。進一步而言，脈搏感測元件10更包括平坦層140。平坦層140覆蓋主動元件T1的源極S、汲極D、主動電極AE、被動電極以及層間絕緣層130的部分表面。在本實施例中，平坦層140的材質例如是有機絕緣材料，有機絕緣材料可包括聚亞醯胺、聚酯、苯並環丁烯（benzocyclobutene，BCB）、聚甲基丙烯酸甲酯（polymethylmethacrylate，PMMA）、聚乙烯苯酚（poly(4-vinylphenol)，PVP）、聚乙烯醇（polyvinyl alcohol，PVA）、聚四氟乙烯（polytetrafluoroethene，PTFE）、六甲基二矽氧烷（hexamethyldisiloxane，HMDSO）。2 and 3, in this embodiment, the material of the passive electrode (for example, the second passive electrode PE2) and the active electrode AE can be selectively the same; that is, the passive electrode and the active electrode AE can belong to the same film Floor. However, the present invention is not limited to this. According to other embodiments, the passive electrode and the active electrode AE may also belong to different film layers. Furthermore, the pulse sensing element 10 further includes a flat layer 140. The flat layer 140 covers the source electrode S, the drain electrode D, the active electrode AE, the passive electrode and a part of the surface of the interlayer insulating layer 130 of the active device T1. In this embodiment, the material of the flat layer 140 is, for example, an organic insulating material. The organic insulating material may include polyimide, polyester, benzocyclobutene (BCB), and polymethylmethacrylate (polymethylmethacrylate). PMMA), poly(4-vinylphenol) (PVP), polyvinyl alcohol (PVA), polytetrafluoroethene (PTFE), hexamethyldisiloxane (HMDSO).

進一步而言，為了提高電性量測的精確度與信賴性，脈搏感測元件10還可包括屏蔽電極150。在基板100的法線方向上，屏蔽電極150重疊設置於主動元件T1、第一訊號線SL1與第二訊號線SL2，且具有重疊於多個主動電極AE的多個開口150a。在本實施例中，屏蔽電極150的開口150a所占區域於基板100上的垂直投影面積大於主動電極AE於基板100上的垂直投影面積，但本發明不以此為限。在其他實施例中，屏蔽電極150的開口150a所占區域於基板100上的垂直投影面積也可小於或等於主動電極AE於基板100上的垂直投影面積。在本實施例中，屏蔽電極150可選擇性地具有一接地電位（ground）、或固定電位。Furthermore, in order to improve the accuracy and reliability of electrical measurement, the pulse sensing element 10 may further include a shield electrode 150. In the normal direction of the substrate 100, the shielding electrode 150 is overlapped on the active device T1, the first signal line SL1 and the second signal line SL2, and has a plurality of openings 150a overlapping the plurality of active electrodes AE. In this embodiment, the vertical projection area of the area occupied by the opening 150a of the shielding electrode 150 on the substrate 100 is larger than the vertical projection area of the active electrode AE on the substrate 100, but the invention is not limited thereto. In other embodiments, the vertical projection area of the area occupied by the opening 150a of the shielding electrode 150 on the substrate 100 may also be less than or equal to the vertical projection area of the active electrode AE on the substrate 100. In this embodiment, the shield electrode 150 can selectively have a ground potential (ground) or a fixed potential.

脈搏感測元件10更包括依序設置於屏蔽電極150上的異方性導電膠層160與壓電材料層170。在本實施例中，屏蔽電極150可選擇性地設置在異方性導電膠層160與平坦層140之間，且異方性導電膠層160係直接覆蓋屏蔽電極150與平坦層140的部分表面。換句話說，異方性導電膠層160可（電性）連接於壓電材料層170與屏蔽電極150之間，或者是透過屏蔽電極150的開口150a而（電性）連接於平坦層140與壓電材料層170之間，但本發明不以此為限。在本實施例中，屏蔽電極150的材料可選自金屬、合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。壓電材料層170的材料可選自尼龍11、聚氟乙烯、聚氯乙烯、聚脲、聚偏二氟乙烯（polyvinylidene difluoride，PVDF）、偏二氟乙烯-三氟乙烯共聚物（P(VDF-TrFE)）。The pulse sensing element 10 further includes an anisotropic conductive adhesive layer 160 and a piezoelectric material layer 170 which are sequentially disposed on the shield electrode 150. In this embodiment, the shielding electrode 150 can be selectively disposed between the anisotropic conductive adhesive layer 160 and the flat layer 140, and the anisotropic conductive adhesive layer 160 directly covers part of the shield electrode 150 and the flat layer 140. . In other words, the anisotropic conductive adhesive layer 160 can be (electrically) connected between the piezoelectric material layer 170 and the shield electrode 150, or through the opening 150a of the shield electrode 150 and (electrically) connected to the flat layer 140 and Between the piezoelectric material layers 170, but the present invention is not limited to this. In this embodiment, the material of the shielding electrode 150 can be selected from metals, alloys, nitrides of metallic materials, oxides of metallic materials, oxynitrides of metallic materials, or other suitable materials, or metallic materials and other conductive materials. Stacked layers of materials. The material of the piezoelectric material layer 170 can be selected from nylon 11, polyvinyl fluoride, polyvinyl chloride, polyurea, polyvinylidene difluoride (PVDF), vinylidene fluoride-trifluoroethylene copolymer (P(VDF) -TrFE)).

進一步而言，當壓電材料層170在基板100的法線方向上受一外力（例如橈動脈的搏動所產生的正向力）而產生一壓縮形變時，其受力方向上的相對兩側會分別累積不同極性的電荷（亦即，其受力方向上的相對兩側之間具有一電位差）。此時，位於壓電材料層170與異方性導電膠層160之連接面的一部分電荷會經由異方性導電膠層160的傳導而累積在平坦層140位於屏蔽電極150之開口150a內的部分表面上，致使位於平坦層140另一側表面上的主動電極AE形成與之相對應的感應電荷。相似地，壓電材料層170所生成的另一部分電荷也可經由異方性導電膠層160的傳導而累積在平坦層140重疊於被動電極的部分表面上，致使位於平坦層140另一側表面上的被動電極（例如第二被動電極PE2）形成與之相對應的感應電荷。也就是說，本實施例的主動電極AE與被動電極可透過電容感應的方式，形成對應於壓電材料層170之壓縮形變量的感測訊號，但本發明不以此為限。Furthermore, when the piezoelectric material layer 170 is subjected to an external force in the normal direction of the substrate 100 (for example, the positive force generated by the pulsation of the radial artery) to produce a compression deformation, the opposite sides of the force direction Charges of different polarities are accumulated respectively (that is, there is a potential difference between opposite sides in the direction of force). At this time, a part of the charge located on the connection surface between the piezoelectric material layer 170 and the anisotropic conductive adhesive layer 160 will be conducted through the anisotropic conductive adhesive layer 160 and accumulated in the portion of the flat layer 140 located in the opening 150a of the shield electrode 150 On the surface, the active electrode AE on the other side surface of the flat layer 140 is caused to form an induced charge corresponding thereto. Similarly, another part of the charge generated by the piezoelectric material layer 170 can also be accumulated on the surface of the flat layer 140 overlapping the passive electrode through the conduction of the anisotropic conductive adhesive layer 160, so that it is located on the other side of the flat layer 140. The upper passive electrode (for example, the second passive electrode PE2) forms an induced charge corresponding to it. In other words, the active electrode AE and the passive electrode of this embodiment can form a sensing signal corresponding to the compressive deformation of the piezoelectric material layer 170 through capacitive sensing, but the invention is not limited to this.

值得一提的是，透過設置在主動元件T1（及訊號線）與壓電材料層170之間的屏蔽電極150，可避免壓電材料層170所生成的部分電荷累積在平坦層140重疊於主動元件T1與訊號線的部分表面上。亦即，這些電荷可經由屏蔽電極150的傳導而自平坦層140與異方性導電膠層160之間移除，進而確保主動元件T1與訊號線的操作電性。換句話說，可避免壓電材料層170與主動元件T1（及訊號線）之間產生電性上的串擾（cross-talk），有助於提升脈搏感測元件10的量測精確度與信賴性。It is worth mentioning that through the shield electrode 150 disposed between the active element T1 (and signal line) and the piezoelectric material layer 170, part of the charge generated by the piezoelectric material layer 170 can be prevented from being accumulated on the flat layer 140 to overlap the active element. Component T1 and part of the surface of the signal line. That is, these charges can be removed from between the flat layer 140 and the anisotropic conductive adhesive layer 160 through the conduction of the shield electrode 150, thereby ensuring the operating electrical properties of the active device T1 and the signal line. In other words, electrical cross-talk between the piezoelectric material layer 170 and the active device T1 (and the signal line) can be avoided, which helps to improve the measurement accuracy and reliability of the pulse sensor 10 Sex.

另一方面，為了取得動脈（例如橈動脈）血管各部（例如寸、關、尺）於不同按壓深度（例如浮、中、沉）時的脈壓分佈，位於主動區AR的多個感測單元SU分別透過多個主動元件T1與訊號線（例如第一訊號線SL1與第二訊號線SL2）電性連接。換句話說，脈搏感測元件10可透過主動元件陣列的操作，讓主動區AR的多個感測單元SU可以特定的掃描頻率進行脈壓的感測。有別於感測單元SU的上述驅動方式，被動電極並未透過主動元件的操作，即可直接連接至訊號讀取端。換句話說，脈搏感測元件10可透過被動電極的連續性感測，實現脈波訊號的即時量測，如圖5所示。On the other hand, in order to obtain the pulse pressure distribution of various parts of the artery (such as the radial artery) (such as inch, close, and ulnar) at different compression depths (such as floating, centering, sinking), multiple sensing units located in the active area AR The SU is electrically connected to signal lines (for example, the first signal line SL1 and the second signal line SL2) through a plurality of active components T1, respectively. In other words, through the operation of the active device array, the pulse sensing element 10 allows the multiple sensing units SU in the active area AR to perform pulse pressure sensing at a specific scanning frequency. Different from the above-mentioned driving method of the sensing unit SU, the passive electrode can be directly connected to the signal reading terminal without the operation of the active element. In other words, the pulse sensing element 10 can realize the real-time measurement of the pulse wave signal through continuous sensing of the passive electrode, as shown in FIG. 5.

進一步而言，圖5的脈波訊號還可進行快速傅立葉轉換（Fast Fourier Transform，FFT），以取得其在頻域（frequency domain）上的訊號分佈（如圖6所示），並透過不同頻率的訊號分析，取得更多的生理特徵，例如心率與呼吸頻率。整體而言，透過設置在主動區AR之相對兩側的兩被動電極，即時取得脈搏的脈波訊號，可進一步實現脈搏感測元件10的科學化量測，有助於中西醫整合醫療的發展。Furthermore, the pulse signal in Figure 5 can also be subjected to Fast Fourier Transform (FFT) to obtain its signal distribution in the frequency domain (as shown in Figure 6), and through different frequencies Signal analysis to obtain more physiological characteristics, such as heart rate and respiratory rate. On the whole, through the two passive electrodes arranged on opposite sides of the active area AR, the pulse signal of the pulse can be obtained in real time, which can further realize the scientific measurement of the pulse sensor 10 and contribute to the development of integrated Chinese and Western medicine. .

在本實施例中，脈搏感測元件10更包括多個接墊200與多條周邊走線。這些接墊200設置於基板100的接合區BR。周邊走線電性連接於對應的一條訊號線（或被動電極）與對應的一個接墊200之間。舉例來說，第一訊號線SL1、第二訊號線SL2與第一被動電極PE1（或第二被動電極PE2）可分別透過周邊走線PL1、周邊走線PL2與周邊走線PL3與對應的一個接墊200電性連接。舉例而言，脈搏感測元件10的這些接墊200可接合至一軟性印刷電路板（flexible printed circuit，FPC）（未繪示），而軟性印刷電路板例如包括覆晶軟板（chip on film，COF）、或其他適合的傳輸電路板。特別說明的是，在本實施例中，多條第二訊號線SL2分別由主動區AR的相對兩側與對應的周邊走線PL2電性連接，但本發明不以此為限。在其他實施例中，多條第二訊號線SL2也可根據實際的電路設計需求由主動區AR的同一側與多條周邊走線PL2電性連接。In this embodiment, the pulse sensing device 10 further includes a plurality of pads 200 and a plurality of peripheral wires. These pads 200 are disposed on the bonding area BR of the substrate 100. The peripheral wiring is electrically connected between a corresponding signal line (or passive electrode) and a corresponding pad 200. For example, the first signal line SL1, the second signal line SL2, and the first passive electrode PE1 (or the second passive electrode PE2) can pass through the peripheral wiring PL1, the peripheral wiring PL2, and the peripheral wiring PL3, respectively. The pad 200 is electrically connected. For example, the pads 200 of the pulse sensor 10 can be connected to a flexible printed circuit board (FPC) (not shown), and the flexible printed circuit board includes, for example, a chip on film , COF), or other suitable transmission circuit boards. Specifically, in this embodiment, the plurality of second signal lines SL2 are electrically connected to the corresponding peripheral traces PL2 from opposite sides of the active area AR, but the present invention is not limited to this. In other embodiments, the multiple second signal lines SL2 can also be electrically connected to multiple peripheral wires PL2 from the same side of the active area AR according to actual circuit design requirements.

以下將列舉另一些實施例以詳細說明本揭露，其中相同的構件將標示相同的符號，並且省略相同技術內容的說明，省略部分請參考前述實施例，以下不再贅述。Other embodiments will be listed below to describe the disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the foregoing embodiments, and will not be repeated hereafter.

圖7是本發明的第二實施例的脈搏感測元件的剖面示意圖。請參照圖7，本實施例的脈搏感測元件11與圖3的脈搏感測元件10的主要差異在於：被動電極（或主動電極）與屏蔽電極的配置關係以及主動元件的構型不同。在本實施例中，平坦層140A可以是第一子層141與第二子層142的堆疊層，其中第一子層141位於主動元件T2與第二子層142之間，且屏蔽電極150A位於第一子層141與第二子層142之間。更具體地說，屏蔽電極150A係夾設於平坦層140A的兩子層之間。Fig. 7 is a schematic cross-sectional view of a pulse sensing element according to a second embodiment of the present invention. Referring to FIG. 7, the main difference between the pulse sensing element 11 of this embodiment and the pulse sensing element 10 of FIG. 3 lies in the configuration relationship between the passive electrode (or active electrode) and the shield electrode and the configuration of the active element. In this embodiment, the planarization layer 140A may be a stacked layer of the first sublayer 141 and the second sublayer 142, where the first sublayer 141 is located between the active device T2 and the second sublayer 142, and the shield electrode 150A is located Between the first sublayer 141 and the second sublayer 142. More specifically, the shield electrode 150A is sandwiched between the two sub-layers of the flat layer 140A.

進一步而言，主動電極AE1與被動電極（例如第二被動電極PE2A）係設置在平坦層140A與異方性導電膠層160之間。平坦層140A可具有通孔145a與通孔145b，其中通孔145b經由屏蔽電極150A的開口150Aa而貫穿平坦層140A。被動電極（例如第二被動電極PE2A）填入通孔145a以電性連接導電圖案CP2，而主動電極AE1填入通孔145b以電性連接導電圖案CP1。舉例而言，導電圖案CP1可電性連接於主動元件T2的汲極D，而導電圖案CP2可電性連接於周邊走線（未繪示）。需說明的是，本實施例的通孔145a與通孔145b數量係分別以兩個與四個為例進行示範性地說明，並不表示本發明以圖式揭示內容為限制。在其他實施例中，通孔145a與通孔145b的數量也可根據實際的阻值設定而調整。Furthermore, the active electrode AE1 and the passive electrode (for example, the second passive electrode PE2A) are disposed between the flat layer 140A and the anisotropic conductive adhesive layer 160. The flat layer 140A may have a through hole 145a and a through hole 145b, wherein the through hole 145b penetrates the flat layer 140A through the opening 150Aa of the shield electrode 150A. The passive electrode (for example, the second passive electrode PE2A) is filled into the through hole 145a to electrically connect to the conductive pattern CP2, and the active electrode AE1 is filled into the through hole 145b to electrically connect to the conductive pattern CP1. For example, the conductive pattern CP1 can be electrically connected to the drain D of the active device T2, and the conductive pattern CP2 can be electrically connected to a peripheral trace (not shown). It should be noted that the number of through holes 145a and through holes 145b in this embodiment is exemplified by taking two and four respectively as examples, which does not mean that the present invention is limited by the content of the drawings. In other embodiments, the number of through holes 145a and through holes 145b can also be adjusted according to actual resistance settings.

值得一提的是，由於主動電極AE1與被動電極係設置於壓電材料層170與屏蔽電極150A之間，主動電極AE1的感測面積可有效增加，且壓電材料層170受外力（例如橈動脈的搏動所產生的正向力）擠壓所生成的部分電荷可透過異方性導電膠層160傳遞至主動電極AE1與被動電極（例如第二被動電極PE2A），並形成感應訊號（例如電流訊號）。據此，可進一步提升脈搏感測元件11的感測訊號強度。另一方面，本實施例的主動元件T2的閘極G係配置在半導體圖案SC的下方（亦即，閘極G位於半導體圖案SC與基板100之間），以形成底部閘極型薄膜電晶體（bottom-gate TFT）。It is worth mentioning that since the active electrode AE1 and the passive electrode are arranged between the piezoelectric material layer 170 and the shield electrode 150A, the sensing area of the active electrode AE1 can be effectively increased, and the piezoelectric material layer 170 is subjected to external forces (such as radial Part of the charge generated by the pulsation of the artery) can be transferred to the active electrode AE1 and the passive electrode (such as the second passive electrode PE2A) through the anisotropic conductive adhesive layer 160, and form an induced signal (such as current Signal). Accordingly, the intensity of the sensing signal of the pulse sensing element 11 can be further improved. On the other hand, the gate G of the active device T2 of this embodiment is arranged under the semiconductor pattern SC (that is, the gate G is located between the semiconductor pattern SC and the substrate 100) to form a bottom gate type thin film transistor (Bottom-gate TFT).

圖8是本發明的第三實施例的脈搏感測元件的俯視示意圖。請參照圖8，本實施例的脈搏感測元件12與圖1的脈搏感測元件10的主要差異在於：感測單元的尺寸不同。在本實施例中，為了能同時量測動脈（例如橈動脈）血管的寸、關、尺三部的脈壓分佈，脈搏感測元件12的感測單元SU-1（或者是主動電極）的所占區域在方向X上的長度大致上可三倍於感測單元SU-1（或者是主動電極）的所占區域在方向Y上的長度。也就是說，脈搏感測元件12的基板100A的主動區AR-1在方向X上的長度大致上可三倍於脈搏感測元件10的基板100的主動區AR在方向X上的長度。據此，有助於提升脈搏感測元件的掃描頻率。然而，本發明不限於此，根據其他實施例，感測單元的所占區域在方向X與方向Y上的尺寸比例也可根據實際的設計需求（例如解析度、掃描頻率）而調整。Fig. 8 is a schematic top view of a pulse sensing element according to a third embodiment of the present invention. Please refer to FIG. 8. The main difference between the pulse sensing element 12 of this embodiment and the pulse sensing element 10 of FIG. 1 is that the size of the sensing unit is different. In this embodiment, in order to measure the pulse pressure distribution of the three parts of an artery (such as the radial artery) at the same time, the measurement unit SU-1 (or the active electrode) of the pulse sensor 12 The length of the occupied area in the direction X may be approximately three times the length of the occupied area of the sensing unit SU-1 (or the active electrode) in the direction Y. That is to say, the length of the active area AR-1 of the substrate 100A of the pulse sensing element 12 in the direction X may be approximately three times the length of the active area AR of the substrate 100 of the pulse sensing element 10 in the direction X. Accordingly, it is helpful to increase the scanning frequency of the pulse sensing element. However, the present invention is not limited to this. According to other embodiments, the size ratio of the area occupied by the sensing unit in the direction X and the direction Y can also be adjusted according to actual design requirements (eg, resolution, scanning frequency).

圖9是本發明的第四實施例的脈搏感測元件的俯視示意圖。請參照圖9，本實施例的脈搏感測元件13與圖8的脈搏感測元件12的主要差異在於：感測單元的數量與尺寸以及被動電極的數量。在本實施例中，基板100A的主動區AR-2具有彼此分離開來的第一子區ARa、第二子區ARb與第三子區ARc。舉例來說，位於每一子區的感測單元SU數量可等於圖1的脈搏感測元件10的感測單元SU數量。特別一提的是，本實施例的第二訊號線SL2可與位在多個子區的多個感測單元SU電性連接，但本發明不以此為限。根據其他實施例，各個子區也可獨自設有第二訊號線SL2。Fig. 9 is a schematic top view of a pulse sensing element according to a fourth embodiment of the present invention. Please refer to FIG. 9, the main difference between the pulse sensing element 13 of this embodiment and the pulse sensing element 12 of FIG. 8 lies in the number and size of sensing units and the number of passive electrodes. In this embodiment, the active area AR-2 of the substrate 100A has a first sub-area ARa, a second sub-area ARb, and a third sub-area ARc that are separated from each other. For example, the number of sensing units SU located in each sub-area may be equal to the number of sensing units SU of the pulse sensing element 10 in FIG. 1. In particular, the second signal line SL2 of this embodiment can be electrically connected to a plurality of sensing units SU located in a plurality of sub-regions, but the invention is not limited thereto. According to other embodiments, each sub-area can also be independently provided with the second signal line SL2.

另一方面，脈搏感測元件13更包括第三被動電極PE3與第四被動電極PE4。第三被動電極PE3設置於主動區AR-2的第一子區ARa與第二子區ARb之間。第四被動電極PE4設置於主動區AR-2的第二子區ARb與第三子區ARc之間，且這些被動電極分別透過對應的一條周邊走線PL1直接與對應的一個接墊200電性連接。據此，脈搏感測元件13可透過這四個被動電極的連續性感測，實現脈波訊號的即時量測。特別說明的是，本實施例的脈搏感測元件13的感測範圍可涵蓋較大的區域，例如橈動脈的寸、關、尺三部（如圖4所示）。換句話說，脈搏感測元件13可用以取代圖4的脈診器1的三個脈搏感測元件10。On the other hand, the pulse sensing element 13 further includes a third passive electrode PE3 and a fourth passive electrode PE4. The third passive electrode PE3 is disposed between the first sub-region ARa and the second sub-region ARb of the active region AR-2. The fourth passive electrode PE4 is disposed between the second sub-area ARb and the third sub-area ARc of the active area AR-2, and these passive electrodes are directly electrically connected to a corresponding pad 200 through a corresponding peripheral wiring PL1. connection. Accordingly, the pulse sensor 13 can realize the real-time measurement of the pulse signal through the continuous sensing of the four passive electrodes. In particular, the sensing range of the pulse sensing element 13 of this embodiment can cover a relatively large area, such as the three parts of the radial artery, such as the inch, the guan, and the ulnar (as shown in FIG. 4). In other words, the pulse sensing element 13 can be used to replace the three pulse sensing elements 10 of the pulse scanner 1 in FIG. 4.

需說明的是，本實施例的被動電極數量以及主動區AR-2的子區數量係分別以四個與三個為例進行示範性的說明，並不表示本發明以此為限制。在其他實施例中，脈搏感測元件的被動電極數量與主動區的子區數量也可根據實際的量測需求而調整。It should be noted that the number of passive electrodes and the number of sub-regions of the active area AR-2 in this embodiment are exemplified by taking four and three as examples, respectively, which does not mean that the present invention is limited thereto. In other embodiments, the number of passive electrodes and the number of sub-regions of the active area of the pulse sensing element can also be adjusted according to actual measurement requirements.

圖10是本發明的第五實施例的脈搏感測元件的俯視示意圖。圖11是圖10的脈搏感測元件的局部區域II的放大示意圖。圖12是圖11的脈搏感測元件的剖面示意圖。需說明的是，為清楚呈現與說明起見，圖10省略了圖11的屏蔽電極150B的繪示；圖10及圖11省略了圖12的閘絕緣層120、平坦層140B、異方性導電膠層160與壓電材料層170的繪示。Fig. 10 is a schematic top view of a pulse sensing element according to a fifth embodiment of the present invention. FIG. 11 is an enlarged schematic diagram of a partial area II of the pulse sensing element of FIG. 10. Fig. 12 is a schematic cross-sectional view of the pulse sensing element of Fig. 11. It should be noted that, for clarity of presentation and description, FIG. 10 omits the drawing of the shield electrode 150B of FIG. 11; FIG. 10 and FIG. 11 omits the gate insulating layer 120, the flat layer 140B, and the anisotropic conductive layer of FIG. The glue layer 160 and the piezoelectric material layer 170 are shown.

請參照圖10及圖11，本實施例的脈搏感測元件14與圖1及圖2的脈搏感測元件10的主要差異在於：被動電極的配置方式不同。在本實施例中，脈搏感測元件14的第一被動電極PE1B與第二被動電極PE2B是設置在主動區AR內。據此，可實現脈搏感測元件14的窄邊框設計。具體而言，第一被動電極PE1B（或第二被動電極PE2B）在基板100的法線方向上可重疊於對應的一條第一訊號線SL1。10 and FIG. 11, the main difference between the pulse sensing element 14 of this embodiment and the pulse sensing element 10 of FIGS. 1 and 2 lies in the configuration of the passive electrodes. In this embodiment, the first passive electrode PE1B and the second passive electrode PE2B of the pulse sensing element 14 are arranged in the active area AR. Accordingly, a narrow frame design of the pulse sensing element 14 can be realized. Specifically, the first passive electrode PE1B (or the second passive electrode PE2B) can overlap with a corresponding first signal line SL1 in the normal direction of the substrate 100.

請參照圖11及圖12，由於本實施例的主動電極AE2、屏蔽電極150B與主動元件T2的配置關係與圖7的脈搏感測元件11相似，因此相關的說明請參見前述實施例，於此便不再重述。在本實施例中，屏蔽電極150B具有開口150Ba，且主動電極AE2貫穿平坦層140B並經由屏蔽電極150B的開口150Ba與主動元件T2的汲極D電性連接。值得注意的是，脈搏感測元件14的被動電極（例如第一被動電極PE1B）是設置在主動電極AE2與主動元件T2之間，且與屏蔽電極150B可屬於同一膜層，但本發明不以此為限。在其他實施例中，脈搏感測元件的被動電極與屏蔽電極也可屬於不同的膜層。11 and 12, since the configuration relationship of the active electrode AE2, the shield electrode 150B, and the active element T2 in this embodiment is similar to that of the pulse sensing element 11 in FIG. 7, the related description please refer to the foregoing embodiment, here Will not repeat it. In this embodiment, the shield electrode 150B has an opening 150Ba, and the active electrode AE2 penetrates the flat layer 140B and is electrically connected to the drain D of the active device T2 through the opening 150Ba of the shield electrode 150B. It is worth noting that the passive electrode (for example, the first passive electrode PE1B) of the pulse sensing element 14 is disposed between the active electrode AE2 and the active element T2, and may belong to the same film layer as the shield electrode 150B, but the present invention does not This is limited. In other embodiments, the passive electrode and the shielding electrode of the pulse sensing element may also belong to different layers.

圖13是本發明的第六實施例的脈搏感測元件的俯視示意圖。請參照圖13，本實施例的脈搏感測元件15與圖10的脈搏感測元件14的差異在於：被動電極的數量不同。具體而言，脈搏感測元件15更包括第三被動電極PE3B。第三被動電極PE3B設置於主動區AR內，且位於第一被動電極PE1B與第二被動電極PE2B之間。值得注意的是，這三個被動電極在基板100的法線方向上各自重疊於對應的一條第一訊號線SL1。據此，可實現脈搏感測元件14的窄邊框設計。Fig. 13 is a schematic top view of a pulse sensing element according to a sixth embodiment of the present invention. Please refer to FIG. 13, the difference between the pulse sensing element 15 of this embodiment and the pulse sensing element 14 of FIG. 10 is that the number of passive electrodes is different. Specifically, the pulse sensing element 15 further includes a third passive electrode PE3B. The third passive electrode PE3B is disposed in the active area AR and located between the first passive electrode PE1B and the second passive electrode PE2B. It is worth noting that the three passive electrodes overlap the corresponding first signal line SL1 in the normal direction of the substrate 100. Accordingly, a narrow frame design of the pulse sensing element 14 can be realized.

需說明的是，在本實施例中，位於主動區AR內的被動電極數量是以三個為例進行示範性地說明，並不表示本發明以圖式揭示內容為限制。根據其他實施例，主動區AR內的被動電極數量也可根據實際的設計需求而調整為一個。It should be noted that, in this embodiment, the number of passive electrodes located in the active area AR is exemplified by taking three as an example, which does not mean that the present invention is limited by the content of the drawings. According to other embodiments, the number of passive electrodes in the active area AR can also be adjusted to one according to actual design requirements.

綜上所述，在本發明一實施例的脈搏感測元件中，用以量測脈搏之脈壓的主動區設有多個主動元件與多個主動電極，並透過設置在此主動區之相對兩側的兩被動電極，即時取得脈搏的脈波訊號，可進一步實現脈搏感測元件的科學化量測，有助於中西醫整合醫療的發展。In summary, in the pulse sensing element of an embodiment of the present invention, the active area for measuring the pulse pressure of the pulse is provided with a plurality of active elements and a plurality of active electrodes. The two passive electrodes on both sides can obtain the pulse signal of the pulse in real time, which can further realize the scientific measurement of the pulse sensor element, which is helpful for the development of integrated Chinese and Western medicine.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

1:脈診器 10、11、12、13、14、15:脈搏感測元件 100、100A:基板 110:緩衝層 120:閘絕緣層 125a、125b、145a、145b:通孔 130:層間絕緣層 140、140A、140B:平坦層 141:第一子層 142:第二子層 150、150A、150B:屏蔽電極 150a、150Aa、150Ba:開口 160:異方性導電膠層 170:壓電材料層 200:接墊 AE、AE1、AE2:主動電極 AR、AR-1、AR-2:主動區 ARa:第一子區 ARb:第二子區 ARc:第三子區 BR:接合區 BV:血管 CH:通道區 CP1、CP2:導電圖案 D:汲極 DR:汲極區 G:閘極 LDR:輕摻雜汲極區 LSR:輕摻雜源極區 PE1、PE1B、PE2、PE2A、PE2B、PE3、PE3B、PE4:被動電極 PL1、PL2、PL3:周邊走線 S:源極 SC:半導體圖案 SL1、SL2:訊號線 SR:源極區 SU、SU-1:感測單元 T1、T2:主動元件 USR:受測者 X、Y:方向 I、II:區域 A-A’、B-B’:剖線 1: Pulse diagnostic device 10, 11, 12, 13, 14, 15: pulse sensing element 100, 100A: substrate 110: buffer layer 120: gate insulation 125a, 125b, 145a, 145b: through holes 130: Interlayer insulation 140, 140A, 140B: flat layer 141: first sublayer 142: second sublayer 150, 150A, 150B: shield electrode 150a, 150Aa, 150Ba: opening 160: Anisotropic conductive adhesive layer 170: Piezoelectric material layer 200: pad AE, AE1, AE2: active electrode AR, AR-1, AR-2: active area ARa: The first sub-area ARb: second sub-area ARc: third sub-area BR: junction zone BV: blood vessels CH: Channel area CP1, CP2: conductive pattern D: Dip pole DR: Drain region G: Gate LDR: Lightly doped drain region LSR: Lightly doped source region PE1, PE1B, PE2, PE2A, PE2B, PE3, PE3B, PE4: passive electrodes PL1, PL2, PL3: peripheral routing S: source SC: Semiconductor pattern SL1, SL2: signal line SR: Source region SU, SU-1: sensing unit T1, T2: active components USR: Subject X, Y: direction I, II: area A-A’, B-B’: cut line

圖1是本發明的第一實施例的脈搏感測元件的俯視示意圖。 圖2是圖1的脈搏感測元件的局部區域的放大示意圖。 圖3是圖2的脈搏感測元件的剖面示意圖。 圖4是圖1的脈搏感測元件應用於人體脈搏量測時的示意圖。 圖5是利用圖1的脈搏感測元件所量測到的脈波圖。 圖6是圖5的脈波訊號經快速傅立葉轉換後的頻譜圖。 圖7是本發明的第二實施例的脈搏感測元件的剖面示意圖。 圖8是本發明的第三實施例的脈搏感測元件的俯視示意圖。 圖9是本發明的第四實施例的脈搏感測元件的俯視示意圖。 圖10是本發明的第五實施例的脈搏感測元件的俯視示意圖。 圖11是圖10的脈搏感測元件的局部區域的放大示意圖。 圖12是圖11的脈搏感測元件的剖面示意圖。 圖13是本發明的第六實施例的脈搏感測元件的俯視示意圖。 Fig. 1 is a schematic top view of a pulse sensing element according to a first embodiment of the present invention. Fig. 2 is an enlarged schematic diagram of a partial area of the pulse sensing element of Fig. 1. Fig. 3 is a schematic cross-sectional view of the pulse sensing element of Fig. 2. FIG. 4 is a schematic diagram of the pulse sensing element of FIG. 1 when it is applied to human pulse measurement. Fig. 5 is a pulse wave diagram measured by the pulse sensing element of Fig. 1. Fig. 6 is a spectrum diagram of the pulse signal of Fig. 5 after fast Fourier transform. Fig. 7 is a schematic cross-sectional view of a pulse sensing element according to a second embodiment of the present invention. Fig. 8 is a schematic top view of a pulse sensing element according to a third embodiment of the present invention. Fig. 9 is a schematic top view of a pulse sensing element according to a fourth embodiment of the present invention. Fig. 10 is a schematic top view of a pulse sensing element according to a fifth embodiment of the present invention. Fig. 11 is an enlarged schematic diagram of a partial area of the pulse sensing element of Fig. 10. Fig. 12 is a schematic cross-sectional view of the pulse sensing element of Fig. 11. Fig. 13 is a schematic top view of a pulse sensing element according to a sixth embodiment of the present invention.

10:脈搏感測元件 10: Pulse sensing element

100:基板 100: substrate

200:接墊 200: pad

AR:主動區 AR: active area

BR:接合區 BR: junction zone

PE1、PE2:被動電極 PE1, PE2: passive electrodes

PL1、PL2、PL3:周邊走線 PL1, PL2, PL3: peripheral routing

SL1、SL2:訊號線 SL1, SL2: signal line

SU:感測單元 SU: sensing unit

X、Y:方向 X, Y: direction

I:區域 I: area

A-A’:剖線 A-A’: Cut line

Claims (12)

一種脈搏感測元件，包括：一基板，具有一主動區與一接合區；多個主動元件，設置於該主動區；多個主動電極，設置於該主動區，且該些主動電極分別電性連接於該些主動元件；一第一被動電極與一第二被動電極，分別設置於至少部分該些主動電極的相對兩側；多個接墊，設置於該接合區，其中該些主動元件、該第一被動電極與該第二被動電極分別電性連接於該些接墊；以及多條第一訊號線與多條第二訊號線，排列於該主動區，該些第一訊號線相交於該些第二訊號線，其中該些主動元件透過該些第一訊號線與該些第二訊號線電性連接於部分該些接墊，且該第一被動電極與該第二被動電極重疊於對應的該些第一訊號線。 A pulse sensing element includes: a substrate having an active area and a bonding area; a plurality of active elements arranged in the active area; a plurality of active electrodes arranged in the active area, and the active electrodes are electrically respectively Connected to the active components; a first passive electrode and a second passive electrode are respectively disposed on opposite sides of at least part of the active electrodes; a plurality of pads are disposed in the bonding area, wherein the active components, The first passive electrode and the second passive electrode are respectively electrically connected to the pads; and a plurality of first signal lines and a plurality of second signal lines are arranged in the active area, and the first signal lines intersect The second signal lines, wherein the active components are electrically connected to some of the pads through the first signal lines and the second signal lines, and the first passive electrode and the second passive electrode overlap The corresponding first signal lines. 如申請專利範圍第1項所述的脈搏感測元件，更包括：一壓電材料層，重疊設置於該些主動電極、該第一被動電極與該第二被動電極，其中該些主動電極、該第一被動電極與該第二被動電極位於該基板與該壓電材料層之間。 The pulse sensing element described in the first item of the scope of patent application further includes: a piezoelectric material layer which is overlapped and disposed on the active electrodes, the first passive electrode and the second passive electrode, wherein the active electrodes, The first passive electrode and the second passive electrode are located between the substrate and the piezoelectric material layer. 如申請專利範圍第2項所述的脈搏感測元件，更包括：一屏蔽電極，重疊設置於該些主動元件、該些第一訊號線與該些第二訊號線。 For example, the pulse sensing device described in the scope of patent application 2 further includes: a shielding electrode arranged to overlap the active devices, the first signal lines and the second signal lines. 如申請專利範圍第3項所述的脈搏感測元件，其中該屏蔽電極位於該些主動元件與該壓電材料層之間。 The pulse sensing device according to item 3 of the scope of patent application, wherein the shield electrode is located between the active devices and the piezoelectric material layer. 如申請專利範圍第3項所述的脈搏感測元件，其中該些主動電極位於該屏蔽電極與該些主動元件之間，且該屏蔽電極具有重疊於該些主動電極的多個開口。 According to the pulse sensing device described in claim 3, the active electrodes are located between the shield electrode and the active components, and the shield electrode has a plurality of openings overlapping the active electrodes. 如申請專利範圍第3項所述的脈搏感測元件，其中該屏蔽電極位於該主動元件與該主動電極之間，該屏蔽電極具有一開口，且該主動電極透過該開口而電性連接於該主動元件。 The pulse sensing device according to claim 3, wherein the shielding electrode is located between the active device and the active electrode, the shielding electrode has an opening, and the active electrode is electrically connected to the active electrode through the opening Active components. 如申請專利範圍第2項所述的脈搏感測元件，更包括：一異方性導電膠層，設置於該壓電材料層與該些主動電極之間，且電性連接於該壓電材料層。 The pulse sensing element described in the second item of the scope of the patent application further includes: an anisotropic conductive adhesive layer disposed between the piezoelectric material layer and the active electrodes and electrically connected to the piezoelectric material Floor. 如申請專利範圍第1項所述的脈搏感測元件，其中該第一被動電極、該第二被動電極與該些主動電極屬於同一膜層。 According to the pulse sensing element described in claim 1, wherein the first passive electrode, the second passive electrode and the active electrodes belong to the same film layer. 如申請專利範圍第1項所述的脈搏感測元件，更包括：一第三被動電極，其中該主動區具有彼此分離開來的一第一子區與一第二子區，且該第三被動電極位於該第一子區與該第二子區之間。 The pulse sensing element described in the first item of the patent application further includes: a third passive electrode, wherein the active area has a first subarea and a second subarea separated from each other, and the third The passive electrode is located between the first sub-region and the second sub-region. 如申請專利範圍第9項所述的脈搏感測元件，更包括：一第四被動電極，其中該主動區還具有與該第一子區及該第二子區分離開來的一第三子區，且該第四被動電極位於該第二子區與該第三子區之間。 The pulse sensing element described in item 9 of the scope of patent application further includes: a fourth passive electrode, wherein the active area further has a third sub-area separated from the first sub-area and the second sub-area , And the fourth passive electrode is located between the second sub-region and the third sub-region. 如申請專利範圍第1項所述的脈搏感測元件，更包括： 一第三被動電極，設置於該主動區，該第三被動電極位於該第一被動電極與該第二被動電極之間，且重疊於對應的另一該第一訊號線。 The pulse sensing element as described in item 1 of the scope of patent application further includes: A third passive electrode is arranged in the active area, and the third passive electrode is located between the first passive electrode and the second passive electrode and overlaps the corresponding other first signal line. 如申請專利範圍第1項所述的脈搏感測元件，更包括：一屏蔽電極，重疊設置於部分該些主動元件、部分該些第一訊號線與該些第二訊號線，其中該第一被動電極、該第二被動電極與該屏蔽電極屬於同一膜層。 For example, the pulse sensing device described in claim 1 further includes: a shielding electrode arranged to overlap part of the active elements, part of the first signal lines and the second signal lines, wherein the first signal line The passive electrode, the second passive electrode and the shielding electrode belong to the same film layer.
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