TWI712066B - Electron beam device, thermal field emitter, method for producing an emitter tip for a thermal field emitter, and method for operating an electron beam device - Google Patents

Electron beam device, thermal field emitter, method for producing an emitter tip for a thermal field emitter, and method for operating an electron beam device Download PDF

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TWI712066B
TWI712066B TW106106110A TW106106110A TWI712066B TW I712066 B TWI712066 B TW I712066B TW 106106110 A TW106106110 A TW 106106110A TW 106106110 A TW106106110 A TW 106106110A TW I712066 B TWI712066 B TW I712066B
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facet
electron beam
emitter
emission
thermal field
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TW201740419A (en
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史帝芬 拉尼歐
艾勒克山卓 克拉瑪
約翰 布雷爾
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德商Ｉｃｔ積體電路測試股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/15—Cathodes heated directly by an electric current
    • H01J1/16—Cathodes heated directly by an electric current characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/02—Electron-emitting electrodes; Cathodes
    • H01J19/04—Thermionic cathodes
    • H01J19/10—Thermionic cathodes characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/065—Construction of guns or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H01J2237/06316—Schottky emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission

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Abstract

An electron beam device for inspecting a sample with an electron beam is described. The electron beam device includes an electron beam source including a thermal field emitter, which includes an emitter tip having an emission facet configured for electron emission, wherein the emission facet has an emission facet width; and a first side facet and a second side facet, wherein an edge facet is formed between the first side facet and the second side facet, which has an edge facet width. The edge facet width is between 20% and 40% of the emission facet width. The electron beam source further includes an extractor device; and a heating device for heating the thermal field emitter. The electron beam device further includes electron beam optics and a detector device for detecting secondary charged particles generated at an impingement or hitting of the primary electron beam on the sample.

Description

電子束裝置、熱場發射器、用於製造用於熱場發射器的發射 器尖端的方法及用於操作電子束裝置的方法 Electron beam device, thermal field emitter, used to manufacture the emission for thermal field emitter Method for tip of detector and method for operating electron beam device

本揭示之實施例係關於用於電子束裝置的電子發射器源、電子束裝置、用於製造用於電子束裝置的電子發射器的方法、及用於操作用於電子束裝置的電子發射器的方法。本揭示之實施例具體關於熱場電子發射器與電子束裝置，例如用於檢查系統應用、測試系統應用、光刻系統應用、缺陷檢視、或臨界尺寸確定應用、及類似者。 The embodiment of the present disclosure relates to an electron emitter source for an electron beam device, an electron beam device, a method for manufacturing an electron emitter for an electron beam device, and an electron emitter for operating an electron beam device Methods. The embodiments of the present disclosure are specifically related to thermal field electron emitters and electron beam devices, such as those used in inspection system applications, test system applications, photolithography system applications, defect inspection, or critical dimension determination applications, and the like.

帶電粒子束裝置可用於例如電子束檢查(EBI)，缺陷檢視、及臨界尺寸量測。在藉由初級帶電粒子束照射樣本或樣品之後，建立訊號帶電粒子(例如次級電子(SE)或背散射帶電粒子)，其可攜帶關於樣品的地形、樣品的化學成分、樣品的靜電位、及關於樣品的其他資訊的資訊。將訊號帶電粒子收集並導引至感測器，例如閃爍器、pin二極體、或類似者。 The charged particle beam device can be used for, for example, electron beam inspection (EBI), defect inspection, and critical dimension measurement. After the sample or sample is irradiated by the primary charged particle beam, the signal charged particles (such as secondary electrons (SE) or backscattered charged particles) are established, which can carry information about the topography of the sample, the chemical composition of the sample, the electrostatic potential of the sample, And other information about the sample. Collect and guide the signal charged particles to a sensor, such as a scintillator, pin diode, or the like.

在帶電粒子束裝置中提供初級帶電粒子束的帶電粒子源(例如電子發射器)的效能具有特別利益。作為實例，具有高發射穩定性的高亮度帶電粒子源及/或高發射電流源是有益的。在真空條件下操作帶電粒子源，其中帶電粒子源的效能可以與真空的品質相關。The efficiency of a charged particle source (such as an electron emitter) that provides a primary charged particle beam in a charged particle beam device is of particular interest. As an example, a high-brightness charged particle source with high emission stability and/or a high emission current source is beneficial. The charged particle source is operated under vacuum conditions, where the efficiency of the charged particle source can be related to the quality of the vacuum.

熱場發射器（TFE）係建立為用於電子顯微鏡的電子源，特別是由於相對高的亮度、相對小的能量寬度、中等的真空標準、及良好的短期發射穩定性與低光束電流雜訊。然而，商業上可取得的TFE通常表現出不希望的穩定性問題，例如角強度的長期連續減少，這歸因於尖端的一般生長，而這導致尖端頂點處的場強度降低，因此降低發射電流與角強度（亮度）的自發變化。尖端的一般生長、場強度的降低、及降低的發射電流係稱為所謂的環坍縮，這通常歸因於原子層中的原子在發射器的尖端處的重新排列，其中電子被釋放。Thermal field emitters (TFE) are established as electron sources for electron microscopes, especially due to relatively high brightness, relatively small energy width, medium vacuum standards, and good short-term emission stability and low beam current noise . However, commercially available TFE often exhibits undesirable stability problems, such as a long-term continuous decrease in angular strength, which is attributed to the general growth of the tip, which results in a decrease in the field strength at the apex of the tip, thereby reducing the emission current Spontaneous changes with angular intensity (brightness). The general growth of the tip, the reduction of the field strength, and the reduced emission current is called the so-called ring collapse, which is usually attributed to the rearrangement of the atoms in the atomic layer at the tip of the emitter, where electrons are released.

如上所述，意欲提供用於帶電粒子束的發射器、帶電粒子束裝置、及用於製造及操作用於帶電粒子束裝置的發射器的方法，以克服本領域的至少一些問題。As described above, it is intended to provide emitters for charged particle beams, charged particle beam devices, and methods for manufacturing and operating emitters for charged particle beam devices to overcome at least some problems in the art.

如上所述，根據獨立請求項提供電子束裝置、熱場發射器、用於操作電子束裝置的方法、及用於製造熱場發射器的方法。從附屬請求項、說明書、及隨附圖式中可理解進一步態樣、優勢、及特徵。As described above, the electron beam device, the thermal field emitter, the method for operating the electron beam device, and the method for manufacturing the thermal field emitter are provided according to the independent request. Further aspects, advantages, and features can be understood from the attached claims, instructions, and accompanying drawings.

根據一個實施例，提供用於利用電子束檢查樣品的電子束裝置。電子束裝置包括電子束源，電子束源包括用於發射電子束的熱場發射器。熱場發射器包括發射器尖端，發射器尖端包括發射刻面以及第一側刻面與第二側刻面，發射刻面經配置以用於電子發射，其中發射刻面具有發射刻面寬度，其中邊緣刻面係形成於第一側刻面與第二側刻面之間，邊緣刻面具有邊緣刻面寬度。邊緣刻面寬度係在發射刻面寬度的20％與40％之間。電子束源進一步包括提取器裝置與加熱裝置，提取器裝置用於在熱場發射器與提取器裝置之間施加提取電壓，加熱裝置用於加熱熱場發射器。電子束裝置進一步包括電子束光學元件與偵測器裝置，電子束光學元件用於將電子束引導並聚焦至樣品上，偵測器裝置用於偵測在電子束碰撞或撞擊至樣品上而產生的次級帶電粒子。According to one embodiment, an electron beam apparatus for inspecting a sample using an electron beam is provided. The electron beam device includes an electron beam source, and the electron beam source includes a thermal field emitter for emitting the electron beam. The thermal field emitter includes an emitter tip, the emitter tip includes an emission facet and a first side facet and a second side facet, the emission facet is configured for electron emission, wherein the emission facet has an emission facet width, The edge facet is formed between the first side facet and the second side facet, and the edge facet has an edge facet width. The edge facet width is between 20% and 40% of the emission facet width. The electron beam source further includes an extractor device and a heating device, the extractor device is used for applying an extraction voltage between the thermal field emitter and the extractor device, and the heating device is used for heating the thermal field emitter. The electron beam device further includes an electron beam optical element and a detector device. The electron beam optical element is used to guide and focus the electron beam on the sample, and the detector device is used to detect when the electron beam collides or hits the sample. Of secondary charged particles.

根據另一實施例，提供一種用於在電子束裝置中發射電子束的熱場發射器。熱場發射器包括發射器尖端，發射器尖端包括發射刻面以及第一側刻面與第二側刻面，發射刻面經配置以用於電子發射，其中發射刻面具有發射刻面寬度，其中邊緣刻面係形成於第一側刻面與第二側刻面之間，邊緣刻面具有邊緣刻面寬度。邊緣刻面寬度係在發射刻面寬度的20％與40％之間。According to another embodiment, there is provided a thermal field emitter for emitting an electron beam in an electron beam device. The thermal field emitter includes an emitter tip, the emitter tip includes an emission facet and a first side facet and a second side facet, the emission facet is configured for electron emission, wherein the emission facet has an emission facet width, The edge facet is formed between the first side facet and the second side facet, and the edge facet has an edge facet width. The edge facet width is between 20% and 40% of the emission facet width.

根據進一步實施例，提供一種用於製造用於電子束源的熱場發射器的發射器尖端的方法。該方法包括以下步驟：提供具有發射器尖端表面的發射器尖端，以及藉由加熱發射器尖端並向發射器尖端施加電場以處理發射器尖端，其中特別藉由處理步驟形成發射刻面、第一側刻面、第二側刻面、及邊緣刻面，發射刻面經配置以用於電子發射，並具有發射刻面寬度，邊緣刻面係在第一側刻面與第二側刻面之間，並具有邊緣刻面寬度。邊緣刻面寬度係形成為發射刻面寬度的20％與40％之間。According to a further embodiment, a method for manufacturing an emitter tip of a thermal field emitter for an electron beam source is provided. The method includes the following steps: providing an emitter tip with an emitter tip surface, and processing the emitter tip by heating the emitter tip and applying an electric field to the emitter tip, wherein the emitting facet, first The side facet, the second side facet, and the edge facet. The emission facet is configured for electron emission and has an emission facet width. The edge facet is between the first side facet and the second side facet Between, and has an edge facet width. The edge facet width is formed to be between 20% and 40% of the emission facet width.

根據進一步實施例，提供一種用於操作電子束裝置的方法。該方法包括以下步驟：提供包括熱場發射器與提取器裝置的電子束源，其中熱場發射器包括發射器尖端。發射器尖端包括發射刻面以及第一側刻面與第二側刻面，發射刻面經配置以用於電子發射，其中發射刻面具有發射刻面寬度，其中邊緣刻面係形成於第一側刻面與第二側刻面之間，邊緣刻面具有邊緣刻面寬度。邊緣刻面寬度係在發射刻面寬度的20％與40％之間。該方法進一步包括以下步驟：利用加熱裝置加熱熱場發射器，在電子束源的熱場發射器與提取器裝置之間施加提取電壓，以及從發射刻面發射電子。According to a further embodiment, a method for operating an electron beam device is provided. The method includes the steps of providing an electron beam source including a thermal field emitter and an extractor device, wherein the thermal field emitter includes an emitter tip. The emitter tip includes an emission facet and a first side facet and a second side facet. The emission facet is configured for electron emission, wherein the emission facet has an emission facet width, and the edge facet is formed on the first side facet. Between the side facet and the second side facet, the edge facet has an edge facet width. The edge facet width is between 20% and 40% of the emission facet width. The method further includes the steps of heating the thermal field emitter with a heating device, applying an extraction voltage between the thermal field emitter of the electron beam source and the extractor device, and emitting electrons from the emission facet.

實施例亦關於用於實現所揭示之方法的設備，並包括用於執行每一所述方法特徵的設備部件。可以藉由硬體部件、由適當軟體程式化的電腦、二者之任何組合或以任何其他方式執行這些方法特徵。此外，實施例亦關於所描述之設備操作的方法。實施例包括用於實現設備的每一功能的方法特徵。The embodiments also relate to equipment for implementing the disclosed method, and include equipment components for performing each of the method features. These method features can be implemented by hardware components, a computer programmed by appropriate software, any combination of the two, or in any other way. In addition, the embodiments also relate to the method of operation of the described device. The embodiment includes method features for implementing each function of the device.

現在將詳細參照各種實施例，一或更多個實例係圖示於圖式中。在以下圖式的描述中，相同的元件符號指稱相同的部件。描述關於獨立實施例的差異。每一實例係藉由解釋而提供，而不意味限制。此外，作為一個實施例的一部分圖示或描述的特徵可以在其他實施例使用或與其他實施例結合，以產生進一步實施例。敘述係意欲包括此類修改與變化。Reference will now be made in detail to various embodiments, one or more examples are shown in the drawings. In the following description of the drawings, the same reference numerals refer to the same components. Describe the differences regarding the independent embodiment. Each example is provided by way of explanation and not meant to be limiting. In addition, features illustrated or described as part of one embodiment can be used in or combined with other embodiments to produce further embodiments. The narrative is intended to include such modifications and changes.

第1圖圖示根據本文所述之實施例的熱場發射器的發射器尖端100。發射器尖端100具有第一部分101與第二部分102。根據一些實施例，第一部分101具有多面體形狀，例如大致立方體形狀、具有大致六邊形橫截面的多面體形狀、具有大致八邊形橫截面的多面體形狀、圓角立方體形狀、由發射刻面110至114中斷的球體、或類似者。第二部分102可以是發射器柄部及/或可以提供長形形狀，例如，如第1圖所示的多邊形柱體的形狀、角柱體、角錐、桿、圓柱體、或用於形成如本文的實施例中所述的電子束裝置的發射器尖端的柄部的任何合適的形狀。Figure 1 illustrates the emitter tip 100 of the thermal field emitter according to the embodiments described herein. The transmitter tip 100 has a first part 101 and a second part 102. According to some embodiments, the first part 101 has a polyhedral shape, such as a substantially cubic shape, a polyhedral shape with a substantially hexagonal cross-section, a polyhedral shape with a substantially octagonal cross-section, a rounded cube shape, and a shape from the emission facet 110 to 114 interrupted sphere, or similar. The second part 102 may be a transmitter handle and/or may provide an elongated shape, for example, the shape of a polygonal cylinder, a prism, a pyramid, a rod, a cylinder, or a shape such as the one shown in FIG. Any suitable shape of the handle of the emitter tip of the electron beam device described in the embodiment.

根據本文所述的一些實施例，第一部分101與第二部分102係由相同的一或更多種材料製成，並可包括一種結晶材料的部分，特別是單結晶材料，而下面將詳細解釋。According to some embodiments described herein, the first part 101 and the second part 102 are made of the same one or more materials, and may include a part of a crystalline material, especially a single crystalline material, which will be explained in detail below .

在第1圖所示的實施例中可以看出，發射器尖端100（特別是發射器尖端100的第一部分101）包括一個發射刻面110以及第一側刻面111、第二側刻面112、第三側刻面113、及第四側刻面114。在一些實施例中，發射器尖端100的側刻面111至114係佈置為相鄰於發射刻面110。根據一些實施例，側刻面係佈置為圍繞發射刻面，且更特定為環繞發射刻面110。In the embodiment shown in Figure 1, it can be seen that the emitter tip 100 (especially the first part 101 of the emitter tip 100) includes an emitting facet 110 and a first side facet 111 and a second side facet 112 , The third side facet 113, and the fourth side facet 114. In some embodiments, the side facets 111 to 114 of the launcher tip 100 are arranged adjacent to the launch facet 110. According to some embodiments, the side facets are arranged to surround the emitting facet, and more specifically to surround the emitting facet 110.

根據本文所述之實施例，本文所使用的術語「刻面」可描述為發射器尖端中的凹部。在一些實施例中，刻面可以具有延伸至發射器尖端中的特定厚度。刻面的厚度可定義為凹部的深度，特別是相較於發射器尖端的第一部分的完全圓形或球形形狀。在一些實施例中，刻面的厚度可以在刻面的面積或大小上變化。根據一些實施例，本文所指稱之刻面（例如發射刻面或側刻面）可以具有大致圓形的形狀、大致矩形的形狀、大致方形的形狀、大致八邊形的形狀、大致多邊形的形狀、具有圓角的矩形或多邊形的形狀、細長形狀、及類似者。According to the embodiments described herein, the term "facet" as used herein can be described as a recess in the tip of the transmitter. In some embodiments, the facet may have a specific thickness extending into the tip of the emitter. The thickness of the facet can be defined as the depth of the recess, especially compared to the completely circular or spherical shape of the first part of the emitter tip. In some embodiments, the thickness of the facet may vary in the area or size of the facet. According to some embodiments, the facet referred to herein (eg, emission facet or side facet) may have a substantially circular shape, a substantially rectangular shape, a substantially square shape, a substantially octagonal shape, or a substantially polygonal shape. , Rectangular or polygonal shapes with rounded corners, elongated shapes, and the like.

發射刻面具有發射刻面寬度。側刻面中之每一者具有側刻面寬度。The emission facet has an emission facet width. Each of the side facets has a side facet width.

第2圖所示的實施例示例性圖示發射刻面寬度，如發射刻面寬度140。側刻面中之每一者具有側刻面寬度115。針對第2圖的一個側刻面繪製側刻面寬度，以用於更好的概述。根據一些實施例，發射刻面寬度及/或側刻面寬度可理解為發射刻面或側刻面在一個方向上的一個尺寸（例如一個直徑），而特定為發射刻面或側刻面的最小尺寸（例如，最小直徑）。根據一些實施例，發射刻面寬度或側刻面寬度可以在各別刻面的平面中量測，或者在由各別刻面的邊界所跨越的平面中量測。The embodiment shown in FIG. 2 exemplarily illustrates the emission facet width, such as the emission facet width 140. Each of the side facets has a side facet width 115. Draw the side facet width for one side facet in Figure 2 for a better overview. According to some embodiments, the width of the emission facet and/or the width of the side facet may be understood as a dimension (for example, a diameter) of the emission facet or the side facet in one direction, and is specifically the size of the emission facet or the side facet. Minimum size (for example, minimum diameter). According to some embodiments, the emission facet width or the side facet width may be measured in the plane of the respective facet, or in the plane spanned by the boundary of the respective facet.

根據本文所述的實施例的刻面中之每一者可以具有限定刻面大小的刻面邊界。刻面邊界可描述為一個刻面結束的線段。如可以在第1圖與第2圖中示例性地看到的，側刻面藉由邊緣刻面120彼此分離，並特定為側刻面結束處為邊緣刻面開始處。Each of the facets according to the embodiments described herein may have a facet boundary that defines the size of the facet. The facet boundary can be described as a line segment where the facet ends. As can be exemplarily seen in Figures 1 and 2, the side facets are separated from each other by the edge facet 120, and the end of the side facet is specified as the beginning of the edge facet.

第1圖與第2圖圖示在側刻面之間形成的邊緣刻面120，特定為在第一側刻面111與第二側刻面112之間、第二側刻面112與第三側刻面113之間、第三側刻面113與第四側刻面114之間、及第四側刻面114與第一側刻面111之間。根據本文所述之實施例，二個側刻面之間的邊緣刻面具有邊緣刻面寬度141，如可以在第2圖中示例性地看到的。Figures 1 and 2 illustrate the edge facet 120 formed between the side facets, specifically between the first side facet 111 and the second side facet 112, and the second side facet 112 and the third side facet. Between the side facets 113, between the third side facet 113 and the fourth side facet 114, and between the fourth side facet 114 and the first side facet 111. According to the embodiment described herein, the edge facet between the two side facets has an edge facet width 141, as can be exemplarily seen in Figure 2.

如本文所使用的邊緣刻面可理解為在側刻面之間的條帶或帶。在一些實施例中，邊緣刻面係為在二個側刻面之間的基本上筆直的條帶或帶。更特定言之，二個側刻面之間的邊緣刻面係由側刻面的邊界限制。根據一些實施例，邊緣刻面在邊緣刻面的兩個側邊由二個側刻面限制，並在一個側邊由發射刻面限制。Edge facets as used herein can be understood as strips or bands between side facets. In some embodiments, the edge facet is a substantially straight strip or band between two side facets. More specifically, the edge facet between the two side facets is limited by the boundary of the side facet. According to some embodiments, the edge facet is limited by two side facets on both sides of the edge facet, and by the emission facet on one side.

根據一些實施例，如本文所述的邊緣刻面寬度可以是邊緣刻面在一個方向上的延伸，例如邊緣刻面在邊緣刻面的最小延伸方向上的延伸，特定為在由相鄰於邊緣刻面的側刻面的側刻面邊界所跨越的平面中。在一些實施例中，邊緣刻面寬度可量測為二個相鄰側刻面之間的最短距離。舉例而言，邊緣刻面可提供大致細長的形狀，例如矩形形狀、細長多面體、細長圓形、橢圓形、及類似者。對於具有細長形狀的邊緣刻面，邊緣刻面寬度可以是邊緣刻面的大致垂直於邊緣刻面的縱向方向的尺寸。如可以在第1圖與第2圖中看到的，邊緣刻面120在邊緣刻面的大致垂直於邊緣刻面的縱向方向的方向上面對發射刻面110。根據一些實施例，側刻面與邊緣刻面一起環繞發射刻面。According to some embodiments, the width of the edge facet as described herein may be the extension of the edge facet in one direction, for example, the extension of the edge facet in the minimum extension direction of the edge facet, particularly when it is adjacent to the edge In the plane spanned by the side facet boundary of the facet. In some embodiments, the edge facet width can be measured as the shortest distance between two adjacent side facets. For example, the edge facets can provide a generally elongated shape, such as a rectangular shape, an elongated polyhedron, an elongated circle, an ellipse, and the like. For an edge facet having an elongated shape, the edge facet width may be a dimension of the edge facet that is substantially perpendicular to the longitudinal direction of the edge facet. As can be seen in Figures 1 and 2, the edge facet 120 faces the emission facet 110 in a direction of the edge facet that is substantially perpendicular to the longitudinal direction of the edge facet. According to some embodiments, the side facet and the edge facet surround the emission facet together.

本文使用的術語「大致」可以意味著以「大致」表示的特性可以存在一定偏差。舉例而言，術語「大致方形」係指稱可以與精確方形的形狀具有一定偏差的形狀，例如在一個方向上的一般延伸的約1％至10％的偏差。在一個實例中，術語「大致垂直」可理解為可以偏離嚴格的「垂直」角度約1°至約15°的佈置。The term "approximately" used herein may mean that the characteristic expressed as "approximately" may have a certain deviation. For example, the term "substantially square" refers to a shape that can have a certain deviation from an exact square shape, such as a deviation of about 1% to 10% of a general extension in one direction. In one example, the term "substantially vertical" can be understood as an arrangement that can deviate from a strict "vertical" angle by about 1° to about 15°.

在一些實施例中，發射刻面可以是在操作期間具有最大電子發射的發射器尖端的刻面。舉例而言，發射刻面可以是在發射器尖端的刻面中具有低的（或甚至最低的）工作函數的刻面。根據一些實施例，發射刻面可以是在操作期間具有最大電子發射的發射器尖端的區域。發射刻面可描述為提供發射器尖端的主電子束的發射器尖端的刻面與區域。根據一些實施例，主電子束可以是沿著使用發射器尖端的電子束裝置的光軸行進的光束。In some embodiments, the emission facet may be the facet of the emitter tip that has the greatest electron emission during operation. For example, the emission facet may be a facet that has a low (or even the lowest) work function among the facets of the emitter tip. According to some embodiments, the emission facet may be the area of the emitter tip that has the greatest electron emission during operation. The emission facet can be described as the facet and area of the emitter tip that provides the main electron beam of the emitter tip. According to some embodiments, the main electron beam may be a beam traveling along the optical axis of the electron beam device using the emitter tip.

在本文所述的一些實施例中，邊緣刻面寬度可以小於發射刻面寬度或側刻面寬度。根據本文所述的實施例，邊緣刻面寬度可以在發射刻面寬度的15％與45％之間，特定為20％與40％之間，而甚至更典型地在25％與35％之間。在一些實施例中，邊緣刻面寬度可以是發射刻面寬度的約30％。In some embodiments described herein, the edge facet width may be smaller than the emission facet width or the side facet width. According to the embodiments described herein, the edge facet width may be between 15% and 45% of the emission facet width, specifically between 20% and 40%, and even more typically between 25% and 35% . In some embodiments, the edge facet width may be about 30% of the emission facet width.

根據一些實施例，發射刻面寬度通常可以在約100nm與約1000nm之間，更典型地在約200nm與約500nm之間，而甚至更典型地在約250nm與350nm之間。According to some embodiments, the emission facet width may generally be between about 100 nm and about 1000 nm, more typically between about 200 nm and about 500 nm, and even more typically between about 250 nm and 350 nm.

第3圖圖示根據本文所述之實施例的熱場發射器的發射器尖端100。第3圖圖示發射器尖端100的實施例，其中側刻面111至114係相對於發射刻面110傾斜。舉例而言，側刻面係佈置在與發射刻面的平面不同的平面中。根據一些實施例，刻面的平面係為包括各別刻面的邊界的平面。在一些實施例中，側刻面可以與發射刻面成一角度，其中該角度通常可以在約25°至約50°之間，更典型地在約30°至約45°之間，而甚至更典型地在約35°與約45°之間。在一些實施例中，發射器尖端包括鎢以及在110晶體平面中延伸的側刻面，其特定為對應於與發射刻面成45°的角度。在一些實施例中，發射器尖端包括鎢以及在211晶體平面中延伸的邊緣刻面，其特定為對應於與發射刻面成35°的角度。Figure 3 illustrates the emitter tip 100 of the thermal field emitter according to the embodiments described herein. Figure 3 illustrates an embodiment of the launcher tip 100, in which the side facets 111 to 114 are inclined relative to the launch facet 110. For example, the side facets are arranged in a plane different from the plane of the emitting facets. According to some embodiments, the plane of the facet is a plane including the boundaries of the individual facets. In some embodiments, the side facet may be at an angle to the emitting facet, where the angle may generally be between about 25° and about 50°, more typically between about 30° and about 45°, and even more It is typically between about 35° and about 45°. In some embodiments, the emitter tip includes tungsten and a side facet extending in the 110 crystal plane, which specifically corresponds to an angle of 45° to the emitting facet. In some embodiments, the emitter tip includes tungsten and an edge facet extending in the 211 crystal plane, which specifically corresponds to an angle of 35° to the emitting facet.

根據可與本文所述的其他實施例組合的一些實施例，發射器尖端可以是結晶發射尖端，特定為單晶發射器尖端或單結晶發射器尖端。在一些實施例中，發射刻面可以具有100晶體定向（對應於根據米勒指數的發射器尖端的晶體平面中的發射刻面的定向）。根據一些實施例，發射刻面可以形成為定向成大致垂直於使用發射器尖端的電子束裝置的光軸。根據一些實施例，側刻面具有不同於發射刻面的晶體定向的晶體定向，及/或邊緣刻面具有不同於側刻面與發射刻面的晶體定向的晶體定向。在可與本文所述的其他實施例組合的一些實施例中，至少第一與第二側刻面可具有110晶體定向。根據可與本文所述的其他實施例組合的一些實施例，邊緣刻面可具有211晶體定向。According to some embodiments that can be combined with other embodiments described herein, the emitter tip may be a crystalline emitter tip, in particular a single crystal emitter tip or a single crystal emitter tip. In some embodiments, the emission facet may have a 100 crystal orientation (corresponding to the orientation of the emission facet in the crystal plane of the emitter tip according to the Miller index). According to some embodiments, the emission facet may be formed to be oriented substantially perpendicular to the optical axis of the electron beam device using the emitter tip. According to some embodiments, the side facet has a crystal orientation different from the crystal orientation of the emitting facet, and/or the edge facet has a crystal orientation different from the crystal orientation of the side facet and the emitting facet. In some embodiments that can be combined with other embodiments described herein, at least the first and second side facets can have a 110 crystal orientation. According to some embodiments that can be combined with other embodiments described herein, the edge facet may have a 211 crystal orientation.

第3圖圖示發射器尖端100的進一步側刻面130，其佈置於側刻面之外，例如發射器尖端在軸件或第二部分102的方向上。進一步側刻面130可具有與側刻面大致相同的大小與形狀。在一些實施例中，進一步側刻面130具有比側刻面111至114更加細長的形狀。根據一些實施例，發射器尖端的側刻面係佈置成相鄰於發射刻面。進一步側刻面130可佈置成相鄰於側刻面。Figure 3 illustrates a further side facet 130 of the transmitter tip 100, which is arranged outside the side facet, for example the transmitter tip is in the direction of the shaft or second part 102. Further, the side facet 130 may have substantially the same size and shape as the side facet. In some embodiments, the further side facet 130 has a more elongated shape than the side facets 111 to 114. According to some embodiments, the side facet of the emitter tip is arranged adjacent to the emitting facet. Further side facets 130 may be arranged adjacent to the side facets.

已知的發射器系統通常不提供用於電子束裝置的高解析度應用的穩定性。舉例而言，當發射器在低發射電流下操作時發生環崩潰，而該操作模式亦導致低能量寬度。然而，低發射電流對於高解析度應用是有用的。實驗與長期經驗表明，已知的發射器系統展示下列行為，並且可以使用下列校正動作：安裝之後的發射器尖端的不穩定效能（穩定期間係用於得到穩定效能）。穩定期間意味著不使用電子束裝置且系統停機，而這升高成本且經常不被客戶接受。長期來說，已知的發射器系統展示出發射電流的降低。由於恆定的束電流（晶圓處的探針電流）對於電子束裝置是有利的，因此藉由升高提取電壓以使用補償動作。升高提取電壓伴隨著發射器尖端的升高的總發射電流（儘管發射到實際探針形成束的小立體角的電流保持恆定）。升高的提取電壓導致電子發射器腔室中產生電弧的較高風險。由發射器尖端發射的升高的電功率亦可能導致發射器系統的較高溫度，這導致真空劣化，而這最終負面地影響發射器系統的發射特性。降低發射、升高提取電壓、及劣化真空的循環開始，這限制能夠從陰極汲取的束電流，並限制到無法接受的低等級，或者導致功率供應器不再能夠提供各別電壓或電流的情況。在這兩種情況下，可更換發射器尖端，而工具將停機幾天，這（再次）升高擁有成本。Known transmitter systems generally do not provide stability for high-resolution applications of electron beam devices. For example, loop collapse occurs when the transmitter is operated at low emission current, and this mode of operation also results in a low energy width. However, low emission current is useful for high-resolution applications. Experiments and long-term experience have shown that the known launcher system exhibits the following behavior and can use the following corrective actions: The unstable performance of the launcher tip after installation (the stable period is used to obtain stable performance). The stabilization period means that the electron beam device is not used and the system is down, which raises costs and is often not accepted by customers. In the long term, the known transmitter system exhibits a reduction in emission current. Since a constant beam current (probe current at the wafer) is advantageous for the electron beam device, the compensation action is used by increasing the extraction voltage. Increasing the extraction voltage is accompanied by an increase in the total emission current of the emitter tip (although the current emitted to the small solid angle of the actual probe forming the beam remains constant). The increased extraction voltage leads to a higher risk of arcing in the electron emitter chamber. The increased electrical power emitted by the transmitter tip may also cause a higher temperature of the transmitter system, which leads to vacuum degradation, which ultimately negatively affects the emission characteristics of the transmitter system. The cycle of lower emission, higher extraction voltage, and deterioration of the vacuum begins. This limits the beam current that can be drawn from the cathode to an unacceptably low level, or causes the power supply to no longer be able to provide individual voltages or currents. . In both cases, the transmitter tip can be replaced and the tool will be down for a few days, which (again) raises the cost of ownership.

根據本文所述之實施例的熱場發射器與電子束裝置解決至少一些上述問題。更特定言之，根據本文所述之實施例的熱場發射器與電子束裝置允許在高亮度下提供穩定的操作，甚至接近在發射器尖端（例如結晶發射器尖端）開始生長任意突起而發射變得不穩定且不可預測之前能夠施加至熱場發射器尖端的最大場強度。根據本文所述之實施例，具有100定向（或大致垂直於電子束裝置的光軸的定向）的發射刻面的發射器尖端有助於實現高亮度下的穩定操作的可能性。The thermal field emitter and electron beam device according to the embodiments described herein solve at least some of the above-mentioned problems. More specifically, the thermal field emitters and electron beam devices according to the embodiments described herein allow stable operation at high brightness, even when any protrusions start to grow close to the tip of the emitter (for example, the tip of a crystal emitter). The maximum field strength that can be applied to the tip of the thermal field emitter before becoming unstable and unpredictable. According to the embodiments described herein, the emitter tip with the emission facet of 100 orientation (or orientation approximately perpendicular to the optical axis of the electron beam device) helps to realize the possibility of stable operation under high brightness.

根據本文所述的實施例的熱場發射器允許幾乎瞬間啟動及穩定（如燈泡）。根據本文所述的實施例的熱場發射器可以在恆定的束電流下操作長得多的時間，而不需顯著升高提取電壓與總體提取電流。The thermal field emitter according to the embodiments described herein allows almost instant start-up and stability (such as a light bulb). Thermal field emitters according to the embodiments described herein can operate at a constant beam current for much longer periods of time without significantly increasing the extraction voltage and overall extraction current.

相較於已知的發射器尖端，根據本文所述的實施例的發射器尖端展示一些有益效果。舉例而言，完全圓形的發射器尖端並不提供長期的穩定發射。另一方面，具有尖銳邊緣的多邊形發射器尖端亦造成不穩定性，因為尖銳邊緣（由於場增強）發射大量的電流，而這對於軸束電流沒有貢獻。過電流產生除氣與真空劣化的問題以及功率供應器限制。上述問題係由根據本文所述的實施例的發射器尖端所克服。Compared to known transmitter tips, the transmitter tips according to the embodiments described herein exhibit some beneficial effects. For example, a completely round transmitter tip does not provide long-term stable emission. On the other hand, the polygonal emitter tip with sharp edges also causes instability, because the sharp edges (due to field enhancement) emit a large amount of current, which does not contribute to the shaft beam current. Overcurrent causes outgassing and vacuum degradation problems and power supply limitations. The above-mentioned problems are overcome by the transmitter tip according to the embodiments described herein.

在一些實施例中，發射器尖端可包括第一材料（例如鎢），並且可具有第二材料（例如ZrO、BaO、或PrO）的塗層或儲存器，以用於發射電子。根據一些實施例，第一材料及/或第二材料可以是結晶材料，特定為單結晶或單晶材料。根據一些實施例，能夠承受具有一定穩定性的熱場發射器中的操作溫度的任何材料可以作為發射器尖端的材料。舉例而言，可以使用耐火金屬。在一些實例中，發射器尖端可包括下列至少一者所組成的群組：W、Cs/W、Ba/W、BaO/W、Th/W、Ce/W、La/W、Y/W、及Zr/W。In some embodiments, the emitter tip may include a first material (such as tungsten), and may have a coating or reservoir of a second material (such as ZrO, BaO, or PrO) for emitting electrons. According to some embodiments, the first material and/or the second material may be crystalline materials, specifically single crystalline or single crystalline materials. According to some embodiments, any material that can withstand the operating temperature in the thermal field emitter with a certain stability can be used as the material of the emitter tip. For example, refractory metals can be used. In some examples, the transmitter tip may include a group consisting of at least one of the following: W, Cs/W, Ba/W, BaO/W, Th/W, Ce/W, La/W, Y/W, And Zr/W.

根據可以與其他實施例組合的一些實施例，熱場發射器可以具有高於1000K的操作溫度範圍，例如高於1300K，甚至更典型地高於1500K。在一些實施例中，熱場發射器可以具有在約1700K與約2100K之間的操作溫度。According to some embodiments that can be combined with other embodiments, the thermal field emitter may have an operating temperature range higher than 1000K, such as higher than 1300K, and even more typically higher than 1500K. In some embodiments, the thermal field emitter may have an operating temperature between about 1700K and about 2100K.

第4圖圖示根據本文所述的實施例的具有帶有熱場發射器與發射器尖端100的電子束源300的電子束裝置1000的實例的示意圖。根據本文所述的實施例的電子束裝置1000可以是例如電子顯微鏡，例如掃描電子顯微鏡（SEM）或掃描透射電子顯微鏡（STEM）。更特定言之，電子顯微鏡可以是例如用於臨界尺寸（CD）、缺陷檢視（DR）或檢查（EBI，亦即電子束檢查）的電子顯微鏡。FIG. 4 illustrates a schematic diagram of an example of an electron beam device 1000 having an electron beam source 300 with a thermal field emitter and an emitter tip 100 according to embodiments described herein. The electron beam device 1000 according to the embodiment described herein may be, for example, an electron microscope, such as a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM). More specifically, the electron microscope may be, for example, an electron microscope used for critical dimension (CD), defect inspection (DR) or inspection (EBI, that is, electron beam inspection).

在電子束裝置中，可以相對於電子束裝置的總效能考慮電子束源的效能（例如，槍效能）。舉例而言，可以為電子束源提供高真空（低壓），例如在殼體1100內的電子束源周圍的10-7 至10-9 Pa的範圍中，或甚至低於10-10 Pa。而且，可能有害於電子發射器的至少一些殘餘氣體的低分壓是有益的。舉例而言，氧氣會對發射器材料的工作函數與電子發射具有負面影響。為了實現合適的真空條件，可以提供真空泵送裝置，並且可以選自渦輪分子泵、離子吸氣泵（例如非蒸發性吸氣泵）、低溫泵、以及上述裝置的任何組合。In the electron beam device, the efficiency of the electron beam source (for example, gun efficiency) can be considered relative to the total efficiency of the electron beam device. For example, a high vacuum (low pressure) may be provided for the electron beam source, such as in the range of 10 -7 to 10 -9 Pa around the electron beam source in the housing 1100, or even lower than 10 -10 Pa. Moreover, a low partial pressure of at least some residual gas that may be harmful to the electron emitter is beneficial. For example, oxygen has a negative impact on the work function of the emitter material and electron emission. In order to achieve suitable vacuum conditions, a vacuum pumping device may be provided, and may be selected from a turbo molecular pump, an ion getter pump (such as a non-evaporative getter pump), a cryopump, and any combination of the above devices.

根據本文所述的一些實施例，電子束裝置1000可包括位於殼體1100中的電子束源300以及連接至殼體1100的樣品腔室1110。在一些實施方案中，單獨的樣品腔室真空產生裝置可連接至樣品腔室1110。在替代實施例中，所有元件可佈置在一個殼體或腔室內。According to some embodiments described herein, the electron beam device 1000 may include an electron beam source 300 located in a housing 1100 and a sample chamber 1110 connected to the housing 1100. In some embodiments, a separate sample chamber vacuum generating device may be connected to the sample chamber 1110. In alternative embodiments, all elements may be arranged in one housing or chamber.

樣品10可設置於樣品腔室1110中。樣品10可設置於樣品支撐件（未圖示）上。樣品支撐件可以是用於定位樣品10的可移動台座。舉例而言，可移動台座可經配置以用於在一個方向（例如X方向）上、在兩個方向（例如XY方向）上、或在三個方向上移動樣品10。The sample 10 can be set in the sample chamber 1110. The sample 10 can be set on a sample support (not shown). The sample support may be a movable stand for positioning the sample 10. For example, the movable pedestal may be configured for moving the sample 10 in one direction (for example, the X direction), in two directions (for example, the XY direction), or in three directions.

本文所指稱之樣品包括但不限於半導體晶圓、半導體工件、遮罩（例如光刻遮罩）、多層遮罩、及其他工件（例如記憶體碟及類似者）。本揭示的實施例可以應用至材料沉積其上或所構造的任何工件。樣品可包括所構造或層沉積其上的表面，例如邊緣、斜面、或類似者。The samples referred to herein include but are not limited to semiconductor wafers, semiconductor workpieces, masks (such as photolithography masks), multilayer masks, and other workpieces (such as memory discs and the like). The embodiments of the present disclosure can be applied to any workpiece on which materials are deposited or constructed. The sample may include a surface on which a structure or layer is deposited, such as an edge, a bevel, or the like.

電子束源300產生電子束，亦稱為初級電子束。根據可與本文所述的其他實施例組合的一些實施例，電子束源300包括具有根據上述實施例的發射器尖端100的熱場發射器，例如，相對於第1圖至第3圖。更特定言之，電子束源300可以具有帶有發射刻面的發射器尖端，發射刻面係佈置於100晶體平面中。在一些實施例中，發射器尖端的發射刻面可以大致垂直於電子束裝置的光軸1。根據本文所述的一些實施例，電子束源300可包括用於加熱熱場發射器的加熱裝置301。更特定言之，加熱裝置可經配置以加熱熱場發射器的發射器尖端。在一些實施例中，加熱裝置301經配置以用於將熱場發射器加熱至操作溫度，例如直到2100K的溫度。在一些實施例中，可藉由電流加熱裝置、加熱絲、或類似者提供加熱裝置。舉例而言，加熱裝置可提供流經加熱絲的加熱電流。在一些實施例中，加熱裝置為可調整，以用於調整發射器尖端的溫度。The electron beam source 300 generates an electron beam, also called a primary electron beam. According to some embodiments that can be combined with other embodiments described herein, the electron beam source 300 includes a thermal field emitter having an emitter tip 100 according to the above-described embodiment, for example, with respect to FIGS. 1 to 3. More specifically, the electron beam source 300 may have an emitter tip with emission facets, and the emission facets are arranged in the 100 crystal plane. In some embodiments, the emission facet of the emitter tip may be substantially perpendicular to the optical axis 1 of the electron beam device. According to some embodiments described herein, the electron beam source 300 may include a heating device 301 for heating the thermal field emitter. More specifically, the heating device may be configured to heat the emitter tip of the thermal field emitter. In some embodiments, the heating device 301 is configured to heat the thermal field emitter to an operating temperature, for example, up to a temperature of 2100K. In some embodiments, the heating device can be provided by an electric current heating device, a heating wire, or the like. For example, the heating device can provide heating current flowing through the heating wire. In some embodiments, the heating device is adjustable to adjust the temperature of the emitter tip.

（初級）電子束在電子束裝置1000中沿著光軸1導引，而藉由物鏡1300聚焦至樣品10上。物鏡1300示例性圖示於樣品腔室1110內。根據一些實施例，舉例而言，物鏡1300成像樣品10上的電子束源的發射器尖端100。在一些實施方案中，可藉由磁性透鏡部分與靜電透鏡部分提供物鏡1300。根據可以與本文所述的其他實施例組合的一些實施例，可以例如在樣品10附近、在物鏡1300內或後方、或其組合中提供初級電子束的減速。舉例而言，根據一些實施例，可以將阻滯偏置電壓施加至樣品10。物鏡1300可以是具有例如軸向間隙或徑向間隙的靜電磁性複合物鏡，或者物鏡1300可以是靜電阻滯場透鏡。The (primary) electron beam is guided along the optical axis 1 in the electron beam device 1000 and focused on the sample 10 by the objective lens 1300. The objective lens 1300 is exemplarily shown in the sample chamber 1110. According to some embodiments, for example, the objective lens 1300 images the emitter tip 100 of the electron beam source on the sample 10. In some embodiments, the objective lens 1300 may be provided by a magnetic lens part and an electrostatic lens part. According to some embodiments that can be combined with other embodiments described herein, the deceleration of the primary electron beam can be provided, for example, in the vicinity of the sample 10, in or behind the objective lens 1300, or a combination thereof. For example, according to some embodiments, a blocking bias voltage may be applied to the sample 10. The objective lens 1300 may be an electrostatic magnetic composite objective lens having, for example, an axial gap or a radial gap, or the objective lens 1300 may be an electrostatic resistance hysteresis lens.

根據本文所述的實施例，可提供聚光透鏡180。聚光透鏡180可為磁性，並具有磁極片與一或更多個線圈。可替代地，聚光透鏡180可為靜電或組合的磁靜電。根據一些實施例，聚光透鏡可以是浸沒式聚光透鏡。According to the embodiments described herein, a condenser lens 180 may be provided. The condenser lens 180 may be magnetic and have a pole piece and one or more coils. Alternatively, the condenser lens 180 may be electrostatic or a combined magnetostatic. According to some embodiments, the condenser lens may be an immersion condenser lens.

在一些實施例中，電子束源300可包括提取器裝置170與陽極175中之至少一者。提取器裝置170可經配置以將電壓差提供至發射器尖端100，以造成電子發射。陽極175可經配置以加速初級電子束。作為實例，陽極175可經配置以加速初級帶電粒子束，而使得當初級帶電粒子束沿著電子束裝置的光軸1透過時，初級帶電粒子束具有預定能量。在一些實施方案中，離開提取器裝置170及/或陽極175的初級電子束的能量可在5keV或以上的範圍中，具體為10keV至50keV的範圍中，而更具體為約15keV或40keV。根據一些實施例，在透射電子顯微鏡（TEM）與掃描透射顯微鏡（STEM）中，束能量甚至可超過100keV。In some embodiments, the electron beam source 300 may include at least one of the extractor device 170 and the anode 175. The extractor device 170 may be configured to provide a voltage difference to the emitter tip 100 to cause electron emission. The anode 175 may be configured to accelerate the primary electron beam. As an example, the anode 175 may be configured to accelerate the primary charged particle beam so that when the primary charged particle beam passes along the optical axis 1 of the electron beam device, the primary charged particle beam has a predetermined energy. In some embodiments, the energy of the primary electron beam exiting the extractor device 170 and/or anode 175 may be in the range of 5 keV or more, specifically in the range of 10 keV to 50 keV, and more specifically about 15 keV or 40 keV. According to some embodiments, in transmission electron microscope (TEM) and scanning transmission microscope (STEM), the beam energy can even exceed 100 keV.

在一些實施例中，提供光束偏轉裝置190，以用於偏轉及導引電子束。根據一些實施例，當初級擊中或撞擊樣品10時，從樣品釋放或背散射訊號帶電粒子束。可以藉由根據本文所述之實施例的光束偏轉裝置190將訊號（或次級）帶電粒子束與初級帶電粒子束分離。光束偏轉裝置190可包括光束分離器與光束彎曲器中之至少一者、一或更多個孔隙（例如噴射孔隙或刀邊緣孔隙195）、或其任何組合。訊號帶電粒子束可被導引朝向偵測器組件或偵測器裝置200，其可包括感測器，例如閃爍器、pin二極體、及類似者。In some embodiments, a beam deflecting device 190 is provided for deflecting and guiding the electron beam. According to some embodiments, when the primary hits or impacts the sample 10, the signal charged particle beam is released or backscattered from the sample. The signal (or secondary) charged particle beam can be separated from the primary charged particle beam by the beam deflecting device 190 according to the embodiments described herein. The beam deflecting device 190 may include at least one of a beam splitter and a beam bender, one or more apertures (such as a jet aperture or a knife edge aperture 195), or any combination thereof. The signal charged particle beam may be directed toward the detector assembly or detector device 200, which may include sensors such as scintillators, pin diodes, and the like.

在電子束裝置的實施例中，可提供在本圖式中未圖示的一或更多個其他光學部件，例如對準系統、校正系統、進一步偵測系統、及類似者。In the embodiment of the electron beam device, one or more other optical components not shown in this drawing may be provided, such as an alignment system, a calibration system, a further detection system, and the like.

對於例如聚光透鏡、孔隙、偏轉器、及其他光學部件的電子束裝置的所描述元件可指稱為用於將電子束裝置引導並聚焦至樣品的帶電粒子束光學元件或電子束光學元件。The described elements of the electron beam device such as condenser lenses, apertures, deflectors, and other optical components may be referred to as charged particle beam optical elements or electron beam optical elements for guiding and focusing the electron beam device to the sample.

第5圖圖示根據本文所述之實施例的用於操作電子束裝置的方法的流程圖700。在方塊710中，該方法可包括以下步驟：提供電子束源與提取器裝置。舉例而言，提取器裝置可以是連接至功率供應器的電極。根據一些實施例，電子束源可以是如上所述的電子束源，例如相對於第4圖而具有提取器、加熱裝置、及熱場發射器。電子束源包括具有發射器尖端的熱場發射器。發射器尖端提供經配置以用於電子發射的發射刻面，其中發射刻面具有發射刻面寬度。所提供的發射器尖端進一步包括第一側刻面與第二側刻面。在第一側刻面與第二側刻面之間形成邊緣刻面，其中邊緣刻面具有邊緣刻面寬度。根據本文所述的實施例，邊緣刻面寬度可以在發射刻面寬度的20%與40%之間，而特定為發射刻面寬度的25%與35%之間。根據一些實施例，在方塊710中用於電子束裝置的操作的發射器尖端可以是如第1圖至第3圖所示及描述的發射器尖端。Figure 5 illustrates a flowchart 700 of a method for operating an electron beam device according to an embodiment described herein. In block 710, the method may include the following steps: providing an electron beam source and extractor device. For example, the extractor device may be an electrode connected to a power supply. According to some embodiments, the electron beam source may be the electron beam source as described above, for example, with respect to FIG. 4, it has an extractor, a heating device, and a thermal field emitter. The electron beam source includes a thermal field emitter with an emitter tip. The emitter tip provides an emission facet configured for electron emission, wherein the emission facet has an emission facet width. The provided transmitter tip further includes a first side facet and a second side facet. An edge facet is formed between the first side facet and the second side facet, wherein the edge facet has an edge facet width. According to the embodiments described herein, the edge facet width may be between 20% and 40% of the emission facet width, and specifically between 25% and 35% of the emission facet width. According to some embodiments, the emitter tip used for the operation of the electron beam device in block 710 may be the emitter tip as shown and described in FIGS. 1 to 3.

用於操作電子束裝置的方法進一步包括以下步驟：在方塊720中，利用加熱裝置加熱熱場發射器。根據一些實施例，可以執行加熱直到熱場發射器的操作溫度，例如直到高於1000K的溫度，例如通常在約1500K與2100K之間的溫度，更典型地在約1600K與約2000°之間的溫度，而甚至更典型地在約1700K與約1900K之間的溫度。The method for operating an electron beam device further includes the following steps: In block 720, the thermal field emitter is heated by a heating device. According to some embodiments, heating may be performed up to the operating temperature of the thermal field emitter, for example, up to a temperature higher than 1000K, such as a temperature generally between about 1500K and 2100K, and more typically between about 1600K and about 2000°. Temperature, and even more typically a temperature between about 1700K and about 1900K.

根據一些實施方案，可以藉由可調整的加熱裝置執行加熱，例如電流加熱裝置、加熱絲、或類似者。舉例而言，可以藉由調整流經加熱裝置的電流以調整發射器尖端的溫度。發射器尖端的溫度亦可受到進一步參數的影響，例如熱場發射器與支撐結構的熱耦合、供應電纜、及與周圍環境的輻射交換。According to some embodiments, the heating can be performed by an adjustable heating device, such as an electric current heating device, a heating wire, or the like. For example, the temperature of the transmitter tip can be adjusted by adjusting the current flowing through the heating device. The temperature of the emitter tip can also be affected by further parameters, such as the thermal coupling of the thermal field emitter to the supporting structure, the supply cable, and the radiation exchange with the surrounding environment.

在方塊730中，在電子束源的熱場發射器與提取器裝置之間施加提取電壓。舉例而言，幾kV的電壓可以施加至提取裝置的電極（例如第4圖所示之提取器裝置170的電極）。舉例而言，施加至提取裝置的電極的電壓通常可以在約2kV與約30kV之間，更典型地在約5kV與20kV之間，例如約10kV。在一些實施例中，可以在提取裝置後方沿著光軸提供加速電極，例如由第4圖中的陽極175所提供的加速電極。加速電極可以連接至功率供應器，並可經配置以將提取器裝置偏壓到第二電位。由陽極175提供的加速電極與提取器裝置170之間的電壓差可以大於100kV。作為實例，電壓差可以在0至40kV的範圍中，具體為0至10kV的範圍中，而更具體為5至30kV的範圍中。在一些SEM應用中，電壓差可以在5至30kV的範圍中。在TEM中，電壓可以大於100kV。In block 730, an extraction voltage is applied between the thermal field emitter of the electron beam source and the extractor device. For example, a voltage of several kV may be applied to the electrodes of the extraction device (for example, the electrodes of the extractor device 170 shown in FIG. 4). For example, the voltage applied to the electrodes of the extraction device may generally be between about 2 kV and about 30 kV, more typically between about 5 kV and 20 kV, such as about 10 kV. In some embodiments, an acceleration electrode may be provided along the optical axis behind the extraction device, such as the acceleration electrode provided by the anode 175 in FIG. 4. The acceleration electrode can be connected to a power supply and can be configured to bias the extractor device to a second potential. The voltage difference between the acceleration electrode provided by the anode 175 and the extractor device 170 may be greater than 100 kV. As an example, the voltage difference may be in the range of 0 to 40 kV, specifically in the range of 0 to 10 kV, and more specifically in the range of 5 to 30 kV. In some SEM applications, the voltage difference can be in the range of 5 to 30 kV. In TEM, the voltage can be greater than 100kV.

根據一些實施例，從所施加的提取電壓而引起的提取場受到幾個參數的影響，例如尖端形狀，特別是尖端的半徑與刻面的形狀；在尖端處提供提取場的電極的幾何形狀，特定為提取器孔隙（與發射器尖端的距離，孔隙直徑）；抑制電極、及施加至提取電極的電壓。According to some embodiments, the extraction field resulting from the applied extraction voltage is affected by several parameters, such as the tip shape, especially the tip radius and the shape of the facet; the geometry of the electrode that provides the extraction field at the tip, Specifically, the extractor aperture (distance from the tip of the emitter, aperture diameter); suppression electrode, and the voltage applied to the extraction electrode.

在方塊740中，從發射器尖端的發射刻面發射電子。根據一些實施例，從具有100晶體定向的發射刻面發射電子，及/或發射刻面係佈置為大致垂直於使用發射器尖端的電子束裝置的光軸。在一些實施例中，發射刻面可以是比發射器尖端的其餘部分發射更大量的電子的發射器的刻面與區域。In block 740, electrons are emitted from the emission facet at the tip of the emitter. According to some embodiments, electrons are emitted from an emission facet having a crystal orientation of 100, and/or the emission facet is arranged substantially perpendicular to the optical axis of the electron beam device using the emitter tip. In some embodiments, the emission facet may be the facet and area of the emitter that emits a larger amount of electrons than the rest of the emitter tip.

在可以與本文所述的其他實施例組合的一些實施例中，用於操作電子束裝置的方法可以進一步包括以下步驟：將（初級）電子束偏轉、聚焦、及導引至待檢查的樣品。舉例而言，第4圖圖示可用於將電子束引導並聚焦至樣品位置上的元件與裝置的實例，例如聚光透鏡、物鏡、偏轉器裝置、孔隙、及類似者。此外，用於操作電子束裝置的方法可包括以下步驟：偵測在初級電子束的撞擊之後從樣品釋放或背散射的次級帶電粒子。在用於偵測目的的方法中可以提供偵測裝置。In some embodiments that may be combined with other embodiments described herein, the method for operating an electron beam device may further include the steps of deflecting, focusing, and guiding the (primary) electron beam to the sample to be inspected. For example, Figure 4 illustrates examples of elements and devices that can be used to guide and focus an electron beam to a sample location, such as condenser lenses, objective lenses, deflector devices, apertures, and the like. In addition, the method for operating the electron beam device may include the step of detecting secondary charged particles released or backscattered from the sample after the impact of the primary electron beam. A detection device can be provided in the method used for detection purposes.

第6圖圖示用於製造電子束源的熱場發射器的發射器尖端的方法的流程圖800。在方塊810中，該方法包括以下步驟：提供具有發射器尖端表面的發射器尖端。更特定言之，發射器尖端可包含單結晶材料。在一個實例中，所提供的發射器尖端可以具有特定為大致圓形的第一部分（例如藉由具有大致球形的形狀、橢圓形、細長球形的形狀、或類似者）以及第二部分（例如，發射器尖端的柄部，如第1圖所描述）。Figure 6 illustrates a flowchart 800 of a method for manufacturing the emitter tip of the thermal field emitter of an electron beam source. At block 810, the method includes the step of providing a transmitter tip having a transmitter tip surface. More specifically, the emitter tip may comprise a single crystalline material. In one example, the provided emitter tip may have a first portion that is specifically substantially circular (for example, by having a substantially spherical shape, an oval shape, an elongated spherical shape, or the like) and a second portion (for example, The handle on the tip of the transmitter, as described in Figure 1).

根據一些實施例，在方塊820中，藉由加熱發射器尖端以及將電場施加至發射器尖端中之至少一者以處理發射器尖端。舉例而言，發射器尖端可以加熱至約2000K範圍內的高溫，例如加熱至通常在約1500K至約2100K之間的溫度，更典型地在約1600K與約2000K之間的溫度，而甚至更典型地在約1700K與約1900K的溫度。在一些實施例中，可以利用幾個MV/mm範圍內的電場而執行電場的施加。舉例而言，電場通常可以在約0.1MV/mm與約3MV/mm之間，更典型地在約0.5MV/mm與約2MV/mm之間，而甚至更典型地在約1MV/mm與約1.5MV/mm之間。根據一些實施例，可以考慮電場的選擇值與溫度的選擇值的關係。根據一些實施例，通常可以在約200V與約500V之間施加抑制器電壓，更典型地在約250V與約400V之間，而甚至更典型地在250V與約350V之間。在一個實例中，抑制器電壓可以是約300V。According to some embodiments, in block 820, the emitter tip is processed by at least one of heating the emitter tip and applying an electric field to the emitter tip. For example, the emitter tip can be heated to a high temperature in the range of about 2000K, such as to a temperature generally between about 1500K and about 2100K, more typically between about 1600K and about 2000K, and even more typically The ground is at a temperature of about 1700K and about 1900K. In some embodiments, the application of the electric field may be performed using an electric field in the range of several MV/mm. For example, the electric field can generally be between about 0.1MV/mm and about 3MV/mm, more typically between about 0.5MV/mm and about 2MV/mm, and even more typically between about 1MV/mm and about Between 1.5MV/mm. According to some embodiments, the relationship between the selected value of the electric field and the selected value of the temperature may be considered. According to some embodiments, the suppressor voltage may generally be applied between about 200V and about 500V, more typically between about 250V and about 400V, and even more typically between 250V and about 350V. In one example, the suppressor voltage may be about 300V.

處理發射器尖端，以給予根據本文所述的實施例的發射器尖端的具體形狀，特別是包括經配置以用於電子發射的發射刻面以及第一側刻面與第二側刻面的發射器尖端的形狀，其中發射刻面具有發射刻面寬度，其中邊緣刻面係形成於第一側刻面與第二側刻面之間，其中邊緣刻面具有邊緣刻面寬度。更特定言之，邊緣刻面寬度係在發射刻面寬度的20％與40％之間，特別是在25％與35％之間。更特定言之，藉由根據本文所述的實施例的流程圖800的方法所取得的發射器尖端的形狀可以是第1圖至第3圖詳細描述的形狀。The emitter tip is processed to give the specific shape of the emitter tip according to the embodiments described herein, in particular including emission facets configured for electron emission, and emission of the first side facet and the second side facet The shape of the tip of the device, wherein the emitting facet has an emitting facet width, wherein the edge facet is formed between the first side facet and the second side facet, and the edge facet has an edge facet width. More specifically, the edge facet width is between 20% and 40% of the emission facet width, especially between 25% and 35%. More specifically, the shape of the emitter tip obtained by the method of the flowchart 800 according to the embodiment described herein may be the shape described in detail in FIGS. 1 to 3.

根據可以與本文所述的其他實施例組合的一些實施例，可以藉由考慮施加至發射器尖端的電場與施加至發射器尖端的溫度之間的均衡以提供熱場發射器。舉例而言，若溫度相對高而電場相對低，則發射器尖端傾向於具有小的或甚至消失的圓形刻面的球形形狀。在另一實例中，若溫度相對低而電場強度相對高，則發射器尖端傾向於更像是具有大的方形刻面的截頂棱錐以及晶體平面之間的尖銳邊緣。According to some embodiments that can be combined with other embodiments described herein, a thermal field emitter can be provided by considering the balance between the electric field applied to the emitter tip and the temperature applied to the emitter tip. For example, if the temperature is relatively high and the electric field is relatively low, the emitter tip tends to have a small or even disappearing round facet spherical shape. In another example, if the temperature is relatively low and the electric field strength is relatively high, the emitter tip tends to be more like a truncated pyramid with large square facets and sharp edges between crystal planes.

根據一些實施例，選擇溫度與電場之間的平衡，而使得發射器尖端的所得到的形狀大致為上述實施例所述的發射器尖端的形狀，而更特定言之，長期發射是穩定的。舉例而言，降低的溫度（特別是溫度降低約50K至約150K，例如從1850K至約1750K）或者束電流設定的增加（例如，將提取電壓升高一因子，例如因子係在1.0與1.5之間）可用於形成根據本文所述之實施例的發射器尖端。According to some embodiments, the balance between temperature and electric field is selected so that the resulting shape of the emitter tip is roughly the shape of the emitter tip described in the above embodiments, and more specifically, the long-term emission is stable. For example, a decreased temperature (especially a temperature decrease of about 50K to about 150K, such as from 1850K to about 1750K) or an increase in the beam current setting (for example, the extraction voltage is increased by a factor, such as a factor between 1.0 and 1.5 Between) can be used to form a transmitter tip according to the embodiments described herein.

在一些實施例中，根據本文所述的實施例的用於製造發射器尖端的方法可包括以下步驟：緩慢地加熱發射器尖端，例如在3至10分鐘內將發射器尖端加熱至約1700K至約2000K的溫度。根據一些實施例，施加電場亦可利用傾斜函數執行，亦即緩慢升高電場，例如直到操作場強度的80％的場強度。可以觀察發射器尖端的穩定幾天，並可調適提取電壓（例如，每天）以取得閥值束電流。該方法亦可包括觀察、調適發射器尖端溫度、及調適提取電壓的一些迭代。In some embodiments, the method for manufacturing a transmitter tip according to the embodiments described herein may include the following steps: slowly heating the transmitter tip, for example, heating the transmitter tip to about 1700K to about 1700K within 3 to 10 minutes. The temperature is about 2000K. According to some embodiments, the application of the electric field can also be performed using a tilt function, that is, the electric field is slowly raised, for example, until a field strength of 80% of the operating field strength. The stability of the transmitter tip can be observed for several days, and the extraction voltage can be adjusted (for example, every day) to obtain the threshold beam current. The method may also include some iterations of observing, adjusting the temperature of the emitter tip, and adjusting the extraction voltage.

根據本文所述的實施例，發射器尖端與電子束裝置允許以高穩定性操作，例如發射電流的穩定性的改變通常小於0.5μA/天，而更典型地小於0.2μA/天。根據本文所述的實施例的熱場發射器與電子束裝置產生比已知系統更穩定的發射特性，且可以操作許多個月，而提取電壓、提取電流、及束電流沒有顯著改變。According to the embodiments described herein, the emitter tip and the electron beam device allow operation with high stability, for example, the change in the stability of the emission current is generally less than 0.5 μA/day, and more typically less than 0.2 μA/day. The thermal field emitter and electron beam device according to the embodiments described herein produce more stable emission characteristics than known systems, and can be operated for many months without significant changes in extraction voltage, extraction current, and beam current.

儘管前述係關於一些實施例，其他及進一步實施例可在不悖離基本範疇的情況下擬出，且範疇係由下列申請專利範圍所決定。Although the foregoing is about some embodiments, other and further embodiments can be drawn up without departing from the basic scope, and the scope is determined by the scope of the following patent applications.

1‧‧‧光軸10‧‧‧樣品100‧‧‧發射器尖端101‧‧‧第一部分102‧‧‧第二部分110‧‧‧發射刻面111‧‧‧側刻面112‧‧‧側刻面113‧‧‧側刻面114‧‧‧側刻面115‧‧‧側刻面寬度120‧‧‧邊緣刻面130‧‧‧進一步側刻面140‧‧‧發射刻面寬度141‧‧‧邊緣刻面寬度170‧‧‧提取器裝置175‧‧‧陽極180‧‧‧聚光透鏡190‧‧‧光束偏轉裝置195‧‧‧孔隙200‧‧‧偵測器裝置300‧‧‧電子束源301‧‧‧加熱裝置700‧‧‧流程圖710‧‧‧方塊720‧‧‧方塊730‧‧‧方塊740‧‧‧方塊800‧‧‧流程圖810‧‧‧方塊820‧‧‧方塊1000‧‧‧電子束裝置1100‧‧‧殼體1110‧‧‧樣品腔室1300‧‧‧物鏡1‧‧‧Optical axis 10‧‧‧Sample 100‧‧‧Emitter tip 101‧‧‧First part 102‧‧‧Second part 110‧‧‧Emitting facet 111‧‧‧Side facet 112‧‧‧Side Facet 113‧‧‧Side facet 114‧‧‧Side facet 115‧‧‧Side facet width 120‧‧‧Edge facet 130‧‧‧Further side facet 140‧‧‧Emission facet width 141‧‧ ‧Edge facet width 170‧‧‧Extractor device 175‧‧‧Anode 180‧‧‧Condenser lens 190‧‧‧Beam deflection device 195‧‧‧Aperture 200‧‧‧Detector device 300‧‧‧Electron beam Source 301‧‧‧Heating device 700‧‧‧Flow chart 710‧‧‧Block 720‧‧‧Block 730‧‧‧Block 740‧‧‧Block 800‧‧‧Flowchart 810‧‧‧Block 820‧‧‧Block 1000 ‧‧‧Electron beam device 1100‧‧‧Shell 1110‧‧‧Sample chamber 1300‧‧‧Objective lens

為了可以詳細地理解上述特徵，簡要概述於上的更具體描述可以參照實施例。隨附圖式係關於實施例，並描述於下： 第1圖圖示根據本文所述之實施例的熱場發射器尖端的示意性透視圖； 第2圖圖示根據本文所述之實施例的熱場發射器尖端的示意性仰視圖； 第3圖圖示根據本文所述之實施例的熱場發射器尖端的示意性透視圖； 第4圖圖示根據本文所述之實施例的電子束裝置的示意圖； 第5圖圖示根據本文所述之實施例的用於操作電子束裝置的方法的流程圖；以及 第6圖圖示根據本文所述之實施例的用於製造熱場發射器的發射器尖端的方法的流程圖。In order to understand the above features in detail, the more detailed description briefly summarized above may refer to the embodiments. The accompanying drawings relate to the embodiment and are described below: Figure 1 shows a schematic perspective view of the tip of the thermal field emitter according to the embodiment described herein; Figure 2 shows the embodiment according to the description herein Schematic bottom view of the tip of the thermal field emitter; Figure 3 illustrates a schematic perspective view of the tip of the thermal field emitter according to the embodiment described herein; Figure 4 illustrates the electron according to the embodiment described herein Fig. 5 illustrates a flowchart of a method for operating an electron beam device according to an embodiment described herein; and Fig. 6 illustrates a method for manufacturing thermal field emission according to an embodiment described herein Of the method of the transmitter tip of the transmitter.

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100:發射器尖端 100: Launcher tip

101:第一部分 101: Part One

102:第二部分 102: Part Two

110:發射刻面 110: launch facet

111:側刻面 111: side facet

112:側刻面 112: side facet

113:側刻面 113: side facet

114:側刻面 114: side facet

120:邊緣刻面 120: Edge facet

Claims (20)

一種用於利用一電子束檢查一樣品的電子束裝置，該電子束裝置包括一光軸，該電子束裝置包含： 一電子束源，包含用於發射一電子束的一熱場發射器，該熱場發射器包含： 一發射器尖端，包含： 一發射刻面，經配置以用於電子發射，其中該發射刻面具有一發射刻面寬度；以及 一第一側刻面與一第二側刻面，其中在該第一側刻面與該第二側刻面之間形成一邊緣刻面，該邊緣刻面具有一邊緣刻面寬度；以及 其中該邊緣刻面寬度係在該發射刻面寬度的20％與40％之間； 該電子束源進一步包含： 一提取器裝置，用於在該熱場發射器與該提取器裝置之間施加一提取電壓；以及 一加熱裝置，用於加熱該熱場發射器； 該電子束裝置進一步包含： 電子束光學元件，用於將該電子束引導並聚焦到該樣品上；以及 一偵測器裝置，用於偵測在該樣品上的該電子束的撞擊或碰撞時產生的次級帶電粒子。An electron beam device for inspecting a sample using an electron beam, the electron beam device comprising an optical axis, the electron beam device comprising: an electron beam source comprising a thermal field emitter for emitting an electron beam, the The thermal field emitter includes: an emitter tip, including: an emission facet configured for electron emission, wherein the emission facet has an emission facet width; and a first side facet and a second side Facet, wherein an edge facet is formed between the first side facet and the second side facet, the edge facet has an edge facet width; and wherein the edge facet width is tied to the emission facet Between 20% and 40% of the width; the electron beam source further includes: an extractor device for applying an extraction voltage between the thermal field emitter and the extractor device; and a heating device for heating The thermal field emitter; the electron beam device further comprising: an electron beam optical element for guiding and focusing the electron beam on the sample; and a detector device for detecting the electron on the sample Secondary charged particles produced during beam impact or collision. 如請求項1所述的電子束裝置，其中該邊緣刻面寬度係在該發射刻面寬度的25%與35%之間。The electron beam device according to claim 1, wherein the edge facet width is between 25% and 35% of the emission facet width. 如請求項1所述的電子束裝置，其中該第一側刻面與該第二側刻面係圍繞該發射刻面佈置。The electron beam device according to claim 1, wherein the first side facet and the second side facet are arranged around the emitting facet. 如請求項1所述的電子束裝置，其中該發射器尖端係為一結晶發射器尖端，且其中該發射刻面具有一100定向或其中該發射刻面係垂直於該電子束裝置的該光軸佈置。The electron beam device according to claim 1, wherein the emitter tip is a crystalline emitter tip, and wherein the emission facet has a 100 orientation or wherein the emission facet is perpendicular to the light of the electron beam device Axis arrangement. 如請求項1所述的電子束裝置，其中該等側刻面相對於該發射刻面傾斜。The electron beam device according to claim 1, wherein the side facets are inclined with respect to the emission facet. 一種用於在一電子束裝置中發射一電子束的熱場發射器，該熱場發射器包含： 一發射器尖端，包含： 一發射刻面，經配置以用於電子發射，其中該發射刻面具有一發射刻面寬度；以及 一第一側刻面與一第二側刻面，其中在該第一側刻面與該第二側刻面之間形成一邊緣刻面，該邊緣刻面具有一邊緣刻面寬度；以及 其中該邊緣刻面寬度係在該發射刻面寬度的20％與40％之間。A thermal field emitter for emitting an electron beam in an electron beam device, the thermal field emitter comprising: an emitter tip, comprising: an emission facet configured for electron emission, wherein the emission mark The mask has an emission facet width; and a first side facet and a second side facet, wherein an edge facet is formed between the first side facet and the second side facet, the edge facet There is an edge facet width; and wherein the edge facet width is between 20% and 40% of the emission facet width. 如請求項6所述的熱場發射器，其中該邊緣刻面寬度係在該發射刻面寬度的25%與35%之間。The thermal field emitter according to claim 6, wherein the edge facet width is between 25% and 35% of the emission facet width. 如請求項6所述的熱場發射器，其中該第一側刻面與該第二側刻面係圍繞該發射刻面佈置。The thermal field emitter according to claim 6, wherein the first side facet and the second side facet are arranged around the emitting facet. 如請求項6所述的熱場發射器，其中該等側刻面相對於該發射刻面傾斜。The thermal field emitter according to claim 6, wherein the side facets are inclined with respect to the emitting facet. 如請求項6所述的熱場發射器，其中該發射器尖端係為一單晶發射器尖端。The thermal field emitter according to claim 6, wherein the emitter tip is a single crystal emitter tip. 如請求項6所述的熱場發射器，其中該發射刻面具有一100晶體定向。The thermal field emitter according to claim 6, wherein the emitter has a 100 crystal orientation. 如請求項6所述的熱場發射器，其中該發射刻面具有一八邊形形狀。The thermal field emitter according to claim 6, wherein the emitter engraved mask has an octagonal shape. 如請求項6所述的熱場發射器，其中該發射刻面寬度在200nm與500nm之間。The thermal field emitter according to claim 6, wherein the emission facet width is between 200 nm and 500 nm. 如請求項6所述的熱場發射器，其中該發射器尖端係為包含鎢的一發射器尖端，並利用ZrO塗覆。The thermal field emitter according to claim 6, wherein the emitter tip is a emitter tip containing tungsten and coated with ZrO. 如請求項6所述的熱場發射器，其中該第一側刻面與該第二側刻面具有一110晶體定向。The thermal field emitter according to claim 6, wherein the first side facet and the second side facet have a 110 crystal orientation. 如請求項6所述的熱場發射器，其中該邊緣刻面具有一211晶體定向。The thermal field emitter according to claim 6, wherein the edge engraved mask has a 211 crystal orientation. 一種用於製造用於一電子束之一源的一熱場發射器的一發射器尖端的方法，包含以下步驟： 提供包含一發射器尖端表面的一發射器尖端；以及 藉由加熱該發射器尖端並將一電場施加至該發射器尖端，以處理該發射器尖端； 其中形成一發射刻面、一第一側刻面、一第二側刻面、及一邊緣刻面，該發射刻面經配置以用於電子發射，並具有一發射刻面寬度，該邊緣刻面係在該第一側刻面與該第二側刻面之間，並具有一邊緣刻面寬度， 其中該邊緣刻面寬度係形成為該發射刻面寬度的20％與40％之間。A method for manufacturing an emitter tip of a thermal field emitter for a source of an electron beam, comprising the steps of: providing an emitter tip including a tip surface of the emitter; and heating the emitter Tip and apply an electric field to the tip of the emitter to process the tip of the emitter; wherein an emitting facet, a first side facet, a second side facet, and an edge facet are formed, the emitting facet It is configured for electron emission and has an emission facet width, the edge facet is between the first side facet and the second side facet, and has an edge facet width, wherein the edge facet The face width is formed between 20% and 40% of the emission facet width. 如請求項17所述的用於製造一發射器尖端的方法，其中該第一側刻面與該第二側刻面係形成為圍繞該發射刻面。The method for manufacturing an emitter tip according to claim 17, wherein the first side facet and the second side facet are formed to surround the emitting facet. 一種用於操作一電子束裝置的方法，包含以下步驟： 提供包含一熱場發射器與一提取器裝置的一電子束源，其中該熱場發射器包含一發射器尖端，該發射器尖端包含： 一發射刻面，經配置以用於電子發射，其中該發射刻面具有一發射刻面寬度；以及 一第一側刻面與一第二側刻面，其中在該第一側刻面與該第二側刻面之間形成一邊緣刻面，該邊緣刻面具有一邊緣刻面寬度；以及 其中該邊緣刻面寬度係在該發射刻面寬度的20％與40％之間； 利用一加熱裝置加熱該熱場發射器； 在該電子束源的該熱場發射器與該提取器裝置之間施加一提取電壓；以及 從該發射刻面發射電子。A method for operating an electron beam device includes the following steps: providing an electron beam source including a thermal field emitter and an extractor device, wherein the thermal field emitter includes an emitter tip, and the emitter tip includes : An emission facet configured for electron emission, wherein the emission facet has an emission facet width; and a first side facet and a second side facet, wherein the first side facet and An edge facet is formed between the second side facets, the edge facet has an edge facet width; and wherein the edge facet width is between 20% and 40% of the emission facet width; using a A heating device heats the thermal field emitter; applying an extraction voltage between the thermal field emitter of the electron beam source and the extractor device; and emitting electrons from the emission facet. 如請求項19所述的用於操作一電子束裝置的方法，進一步包含以下步驟：藉由電子束光學元件將由該發射器尖端發射的該等電子引導至一樣品。The method for operating an electron beam device according to claim 19, further comprising the step of guiding the electrons emitted from the tip of the emitter to a sample by an electron beam optical element.
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