TWI709251B - Solar antenna array and its fabrication - Google Patents

Solar antenna array and its fabrication Download PDF

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TWI709251B
TWI709251B TW104137565A TW104137565A TWI709251B TW I709251 B TWI709251 B TW I709251B TW 104137565 A TW104137565 A TW 104137565A TW 104137565 A TW104137565 A TW 104137565A TW I709251 B TWI709251 B TW I709251B
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antenna array
antenna
template
ground
solar
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TW104137565A
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TW201624746A (en
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勞倫斯Ｈ 庫克
威廉Ｊ 艾倫
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美商諾瓦索里克斯股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Abstract

A solar antenna array may comprise an array of antennas that may capture and convert sunlight into electrical power. Methods for constructing the solar antenna array may use a stencil and self aligning semiconductor processing steps to minimize cost. Designs may be optimized for capturing a broad spectrum of visible light and non-polarized light. Testing and disconnecting defective antennas from the array may also be performed.

Description

太陽能天線陣列及其製造技術 Solar antenna array and its manufacturing technology 相關申請案交互參照Cross-reference to related applications

本申請案係2012年4月24日提出申請之美國專利申請案第13/454,155號的部分連續案，其全文內容係以參考方式併入本文。 This application is a partial continuation of US Patent Application No. 13/454,155 filed on April 24, 2012, the full content of which is incorporated herein by reference.

本揭露之各項態樣可涉及可見光校正天線陣列之節約製造程序，用於將太陽能轉換成電。 Various aspects of the present disclosure may involve the economical manufacturing process of the visible light correction antenna array for converting solar energy into electricity.

高頻信號之交流對直流轉換用的整流器數十年來已是眾所周知。二極體整流器耦合至稱為校正天線(rectenna)之天線時的特定類型，也已為人所知達數十年。更具體而言，在20多年前，Logan便曾在1991年8月27日獲准之美國專利第5,043,739號中，說明使用校正天線陣列擷取微波並將其轉換成電能。然而，天線尺寸使頻率受到限制，這個問題直到最近獲得解決，Gritz在2010年3月16日獲准之美國專利第7,679,957號中，說明使用類似結構將紅外光轉換成電，而Pietro Siciliano在義大利Lecce之「Nano-Rectenna For High Efficiency Direct Conversion of Sunlight to Electricity：by Pietro Siciliano of The Institute for Microelectronics and Microsystems IMM-CNR」中提出此一 結構可用於陽光。 Rectifiers for AC to DC conversion of high frequency signals have been well known for decades. The specific type of diode rectifier when coupled to an antenna called a rectenna has also been known for decades. More specifically, more than 20 years ago, Logan described the use of a correction antenna array to capture microwaves and convert them into electrical energy in US Patent No. 5,043,739 granted on August 27, 1991. However, the antenna size limits the frequency. This problem has only recently been resolved. Gritz in the US Patent No. 7,679,957 granted on March 16, 2010, describes the use of a similar structure to convert infrared light into electricity, while Pietro Siciliano in Italy Lecce’s "Nano-Rectenna For High Efficiency Direct Conversion of Sunlight to Electricity: by Pietro Siciliano of The Institute for Microelectronics and Microsystems IMM-CNR" proposed this The structure can be used for sunlight.

此類可見光校正天線所需的最小尺寸大致仍是數十奈米。儘管現今的深次微米遮罩技術可以達到這些尺寸，處理成本一般仍遠高於目前的太陽能電池程序，其需要的尺寸大很多。 The minimum size required for this type of visible light correction antenna is still roughly tens of nanometers. Although the current deep sub-micron mask technology can reach these sizes, the processing cost is generally still much higher than the current solar cell process, and the size required is much larger.

如Logan在美國專利第5,043,739中所提，微波校正天線的效率仍可高達40%，比一般單接面多晶矽太陽能電池陣列的兩倍還高，而且如Pietro所提，使用金屬-氧化物-金屬(MOM)整流二極體時，陣列核心不需要半導體電晶體。 As mentioned by Logan in U.S. Patent No. 5,043,739, the efficiency of the microwave correction antenna can still be as high as 40%, which is twice as high as that of a general single-junction polycrystalline silicon solar array. Moreover, as mentioned by Pietro, it uses metal-oxide-metal. (MOM) When rectifying diodes, the core of the array does not require semiconductor transistors.

如此，可能會有助益的是，能夠利用目前半導體製造技術現存之細小幾何形狀處理能力，但不用為此製造承擔成本。 In this way, it may be helpful to be able to use the existing processing capabilities of small geometric shapes in current semiconductor manufacturing technology without having to bear the cost of manufacturing.

同樣地，在萊斯大學(Rice University)近來提出的報告中，其研究已建立具有類金屬電及熱性質之奈米碳管(CNT)主題緒。再者，如Rosenberger等人在2008年4月8日獲准之美國專利第7,354,877中所述，單壁式奈米碳管(SWCNT)結構正變為更具有可製造性。各種形式之持續CNT生長亦可能已列入考量，例如Lemaire等人在CNT領域不斷地有所收獲，並且在2010年6月29日獲准美國專利第7,744,793號，及/或使用Predtechensky等人在2012年3月20日獲准之美國專利第8,137,653號中所述的技術加以落實。Grigorian等人在2008年10月7日獲准之美國專利第7,431,985號中，說明持續推送碳氣穿過催化劑敷層多孔膜 以生長CNT。 Similarly, in a recent report by Rice University, its research has established the topic of carbon nanotubes (CNT) with metal-like electrical and thermal properties. Furthermore, as described in US Patent No. 7,354,877 issued by Rosenberger et al. on April 8, 2008, the single-walled carbon nanotube (SWCNT) structure is becoming more manufacturable. Various forms of continuous CNT growth may also be considered. For example, Lemaire et al. have continued to gain in the CNT field, and were granted US Patent No. 7,744,793 on June 29, 2010, and/or used Predtechensky et al. in 2012 The technology described in U.S. Patent No. 8,137,653, which was approved on March 20, 2005, was implemented. Grigorian et al., in US Patent No. 7,431,985, which was granted on October 7, 2008, described the continuous push of carbon gas through the catalyst coating porous membrane To grow CNT.

再者，其他文獻已考量將SWCNT用於各種結構，例如：萊斯大學在如Mike Williams於2014年2月13日公告之「Rice’s carbon nanotube fibers outperform copper」中所述之CNT主題緒，網址為：http：//news.rice.edu/2014/02/13/rices-carbon-nanotube-fibers-outperform-copper-2，如Tyson Winarski在2010年3月30日獲准之美國專利第7,687,160中所述之磁性資料儲存器，以及特別的是，Tadashi Ito等人在2010年9月30日公告之美國專利公告第2010/0244656號中所述之天線式太陽能電池。Ito等人仍未說明以不昂貴的方式建構用於有效率地轉換太陽能之奈米碳管太陽能天線的方法。 In addition, other documents have considered the use of SWCNT in various structures. For example, Rice University’s CNT thread in the "Rice's carbon nanotube fibers outperform copper" announced by Mike Williams on February 13, 2014, is available at ：Http://news.rice.edu/2014/02/13/rices-carbon-nanotube-fibers-outperform-copper-2, as described in U.S. Patent No. 7,687,160 granted by Tyson Winarski on March 30, 2010 The magnetic data storage device, and in particular, the antenna-type solar cell described in U.S. Patent Publication No. 2010/0244656 published by Tadashi Ito et al. on September 30, 2010. Ito et al. have not yet explained how to construct a carbon nanotube solar antenna for efficient conversion of solar energy in an inexpensive manner.

本發明之各項實施例可與用於將陽光轉換成電之校正天線陣列的結構有關，及/或與用以製造此類結構之方法有關，該等結構可將使用目前深次微米IC遮罩技術製作之自對準程序步驟及模板(或稱模版)有關，以便達到天線所需的細小尺寸。 The various embodiments of the present invention may be related to the structure of the calibration antenna array used to convert sunlight into electricity, and/or to the method used to manufacture such structures, which can be used to shield the current deep submicron ICs. The self-alignment process steps of the cover technology are related to the template (or template) in order to achieve the required small size of the antenna.

校正天線陣的結構可包括有藉由MOM二極體連接至正軌及負軌之天線陣列。天線可等長，居於中心位置以接收最多綠光。 The structure of the calibration antenna array may include an antenna array connected to the positive rail and the negative rail by MOM diodes. The antennas can be of equal length and centered to receive the most green light.

在一項實施例中，天線列可在藍光最佳接收與紅光最佳接收之間，跨陣列前後逐漸改變長度。此最佳接收可由長度可從220奈米改變至340奈米之半波天線所組成。 校正天線陣列可附接至實心背表面，該實心背表面可包括有用於將光反射回陣列之鏡面。還可有接地平面的作用，其中介於接地與天線陣列之間的距離搭配介於兩者之間的聚合物介電常數可形成用於可見光之理想帶線天線。 In one embodiment, the antenna array may gradually change the length between the best reception of blue light and the best reception of red light across the array. The optimal reception can be composed of a half-wave antenna whose length can be changed from 220 nm to 340 nm. The calibration antenna array may be attached to a solid back surface, which may include a mirror surface for reflecting light back to the array. It can also function as a ground plane, where the distance between the ground and the antenna array and the polymer dielectric constant between the two can form an ideal strip line antenna for visible light.

在另一實施例中，不同長度的天線係順著至少兩個方向局部對準，以及該等兩個方向可為彼此垂直。 In another embodiment, antennas of different lengths are locally aligned along at least two directions, and the two directions may be perpendicular to each other.

在另一實施例中，一對陣列可夾在一起，使得各別天線層彼此垂直。 In another embodiment, a pair of arrays can be clamped together so that the individual antenna layers are perpendicular to each other.

在一項實施例中，模板可藉由一系列經遮罩之異向性V形槽蝕刻建立，隨後進行抗黏附沉積。此程序其中一道步驟可包括有研磨阻劑，使矽的非開槽部分經受V形槽蝕刻。 In one embodiment, the template can be created by a series of masked anisotropic V-groove etchings followed by anti-adhesion deposition. One of the steps in this process can include a polishing resist to subject the non-grooved portion of the silicon to V-groove etching.

在另一實施例中，校正天線陣列可在連續金屬沉積步驟中使用模板製作。模板在當作沉積目標時可成角度或平坦，而且沉積的深度遠小於模板中的V形槽。產生的金屬可使用聚合物襯底材料自模板剝離。附加層接著可在以聚合物襯底之校正天線陣列上沉積。 In another embodiment, the calibration antenna array can be fabricated using a template in a continuous metal deposition step. The template can be angled or flat when used as a deposition target, and the depth of deposition is much smaller than the V-shaped groove in the template. The resulting metal can be peeled from the template using a polymer backing material. Additional layers can then be deposited on the calibration antenna array on a polymer substrate.

在又另一實施例中，模板可重複清潔並且再利用。 In yet another embodiment, the template can be repeatedly cleaned and reused.

在又另一實施例中，校正天線陣列可具體實現冗餘天線，該等冗餘天線若有缺陷，可藉由透過陣列通電來斷接。 In yet another embodiment, the calibration antenna array can implement redundant antennas. If the redundant antennas are defective, they can be disconnected by powering on the array.

在另一實施例中，奈米碳管天線可在金屬線之間生長，該等金屬線包含有V形槽模板所形成之金屬及金屬氧 化物奈米球的混合物。 In another embodiment, carbon nanotube antennas can be grown between metal wires. The metal wires include metal and metal oxide formed by a V-shaped groove template. A mixture of chemical nanospheres.

10、111、151、170、172:天線 10, 111, 151, 170, 172: antenna

11、12:透納二極體 11, 12: Turner diode

13、122、155、173、214、220、226、230:電力線 13, 122, 155, 173, 214, 220, 226, 230: power line

14、121、156、208、213、221、227、231:接地線 14, 121, 156, 208, 213, 221, 227, 231: ground wire

20:天線長度 20: antenna length

21、25:矽晶圓 21, 25: Silicon wafer

22:材料 22: Material

23、152:溝槽 23, 152: groove

24:阻劑線 24: Resist line

123:V形槽蝕刻 123: V-groove etching

26:大型脊 26: large ridge

27:小型脊 27: Small Ridge

28:脊 28: Ridge

29:薄層矽 29: Thin layer silicon

30:線路 30: Line

31:間隔 31: interval

32~35、132~133、140~142、180、183~184、186~187、207:V形槽 32~35, 132~133, 140~142, 180, 183~184, 186~187, 207: V groove

36:氮化矽 36: silicon nitride

40:v形凹槽 40: v-shaped groove

41~42:v形脊 41~42: V-shaped ridge

50:模板 50: template

51:傳導線 51: Conduction line

52:聚合物材料 52: polymer material

53:氧化物 53: oxide

60:蓋玻璃層 60: cover glass layer

61~62:凹穴 61~62: cavities

63:電力線材料 63: Power line materials

65:接地線材料 65: Ground wire material

71~72、171:MOM二極體 71~72, 171: MOM diode

74:背板 74: Backplane

75:清透蓋層 75: Clear cover layer

80、82、101~102:太陽能天線陣列 80, 82, 101~102: solar antenna array

81:光旋轉材料 81: light rotating material

83:反射材料 83: reflective material

90:圖 90: Figure

92:波長段 92: wavelength band

100:重疊段 100: overlapping segments

112、162、190~191、196:電力 112, 162, 190~191, 196: Electricity

113、161、192~193、197:接地 113, 161, 192~193, 197: Ground

114:短接之二極體 114: Short-circuit diode

115:斷開之電容器 115: Disconnected capacitor

116:熔斷 116: Fuse

120、181:阻劑 120, 181: resist

124:矽 124: Silicon

125:V形槽溝槽 125: V-groove groove

130:阻劑圖型 130: resist pattern

134、154:非黏附材料 134, 154: non-adhesive materials

153:蓋玻璃 153: cover glass

157:撓性聚合物 157: Flexible polymer

163:鈍化材料 163: Passivation Material

182:非蝕刻表面 182: Non-etched surface

185:第一組 185: The first group

188:選擇性n型摻雜擴散 188: Selective n-type doping diffusion

194、195:交錯轉折 194, 195: Staggered Turn

201、215:催化球 201, 215: Catalytic ball

202、211:導體 202, 211: Conductor

203、212:聚合物 203, 212: Polymer

205:氧化球 205: Oxidized Ball

217~218:奈米碳管 217~218: Carbon Nanotubes

222~225:結部 222~225: knot

240、253:電力線與接地線 240, 253: power line and grounding line

241:催化球及金屬 241: Catalytic ball and metal

242:絕緣聚合物 242: Insulating polymer

250:天線陣列 250: antenna array

251:板線 251: Board Line

252:聚醯胺稜錐或根柱 252: Polyamide pyramid or root column

254:支撐透明玻璃板 254: Support transparent glass plate

本發明之各項實施例現將參照附圖來說明，其中：圖1係根據本發明之一實施例，天線陣列的邏輯圖；圖2a、2b及2c係根據本發明之一實施例，模板在製作期間順著Y方向的截面；圖3a、3b、3c及3d係根據本發明之一實施例，模板在製作期間順著X方向的截面；圖4係根據本發明之一實施例，一段模板的圖；圖5a、5b、5c及5d係根據本發明之一實施例，天線陣列在製作期間順著X方向的截面；圖6a、6b及6c係根據本發明之一實施例，天線陣列在製作期間順著X方向的截面；圖7係根據本發明之一實施例，一段天線陣列的截面；圖8係根據本發明之一實施例，兩個夾在一起之天線陣列的截面；圖9係根據本發明之一實施例，一段天線陣列的俯視圖；圖10係根據本發明之一實施例，兩個夾在一起之天線陣列的俯視圖；圖11a及11b係根據本發明之一實施例，具有缺陷之天線陣列在測試之前及之後的邏輯圖；圖12a、12b及12c係根據本發明之一實施例，模板在製 作期間順著Y方向的截面；圖13a、13b、13c及13d係根據本發明之一實施例，模板在製作期間順著X方向的截面；圖14係根據本發明之一實施例，一段模板的上剖視圖；圖15a至15f係根據本發明之一實施例，天線陣列在模板上製作期間的截面；圖16a、16b及16c係根據本發明之一實施例，天線陣列從模板移除後，製作期間的截面；圖17係根據本發明之另一實施例，天線陣列的邏輯圖；圖18a至18d係根據本發明之一實施例，另一模板製造技術之截面；圖19a及19b係根據本發明之實施例，數段模板的圖；圖20a至20d係根據本發明之一實施例，天線陣列在製作期間的截面；圖21a至21d係根據本發明之另一實施例，天線陣列在製作期間的截面；圖22a及22b係太陽能陣列上與圖19a及19b中所示數段模板對應之電力線與接地線之兩種不同組態的俯視圖；圖23係所具有之奈米碳管天線有缺陷之天線陣列的截面；圖24係根據本發明之一實施例，天線陣列之有標註的截面；以及 圖25係根據本發明之另一實施例，具有蓋板之天線陣列的截面。 The various embodiments of the present invention will now be described with reference to the accompanying drawings, in which: Fig. 1 is a logic diagram of an antenna array according to an embodiment of the present invention; Figs. 2a, 2b and 2c are a template according to an embodiment of the present invention Sections along the Y direction during production; Figures 3a, 3b, 3c, and 3d are cross sections along the X direction during production according to an embodiment of the present invention; Figure 4 is a section according to an embodiment of the present invention, a section Figures of the template; Figures 5a, 5b, 5c, and 5d are cross sections of the antenna array along the X direction during production according to an embodiment of the present invention; Figures 6a, 6b, and 6c are based on an embodiment of the present invention, the antenna array The cross section along the X direction during production; Fig. 7 is a cross section of an antenna array according to an embodiment of the present invention; Fig. 8 is a cross section of two antenna arrays sandwiched together according to an embodiment of the present invention; 9 is a top view of an antenna array according to an embodiment of the present invention; FIG. 10 is a top view of two antenna arrays clamped together according to an embodiment of the present invention; FIGS. 11a and 11b are according to an embodiment of the present invention , The logic diagram of the defective antenna array before and after the test; Figures 12a, 12b, and 12c are based on an embodiment of the present invention, the template is being manufactured The cross section along the Y direction during operation; Figures 13a, 13b, 13c and 13d are the cross section along the X direction during the production of the template according to an embodiment of the present invention; Figure 14 is a section of the template according to an embodiment of the present invention Figures 15a to 15f are cross-sections of the antenna array during fabrication on a template according to an embodiment of the present invention; Figures 16a, 16b and 16c are according to an embodiment of the present invention, after the antenna array is removed from the template, Sections during production; Figure 17 is a logic diagram of an antenna array according to another embodiment of the present invention; Figures 18a to 18d are sections of another template manufacturing technique according to one embodiment of the present invention; Figures 19a and 19b are based on Embodiments of the present invention, diagrams of several sections of templates; Figures 20a to 20d are cross-sections of the antenna array during fabrication according to an embodiment of the present invention; Figures 21a to 21d are according to another embodiment of the present invention, the antenna array is Cross section during production; Figure 22a and 22b are top views of two different configurations of power lines and ground lines corresponding to the segments of the template shown in Figures 19a and 19b on the solar array; Figure 23 is the carbon nanotube antenna with Section of a defective antenna array; Figure 24 is a labeled section of the antenna array according to an embodiment of the present invention; and Figure 25 is a cross-section of an antenna array with a cover according to another embodiment of the present invention.

本發明之實施例現係參照圖1至24來說明，據了解，這些圖可繪示各項實施例之標的內容，並且可能未按照比例或尺度繪製。 The embodiments of the present invention are now described with reference to FIGS. 1 to 24. It is understood that these figures can illustrate the subject matter of the various embodiments, and may not be drawn according to scale or scale.

圖1中展示本發明之一實施例之一實例的邏輯圖。太陽能天線陣列的核心可具有數列天線10，這數列天線是藉由電力線13及接地線14分離。電力線及接地線可各別藉由透納二極體11及12耦合至天線。當天線受到可見光激發時，電流可從接地線流至電力線，從而產生半整流電能。所屬技術領域中具有通常知識者可瞭解的是，諸如切換電容器及解耦電容器等附加電路系統可包括於太陽能天線陣列的周緣，希望能以適合商業應用的電壓產生穩定的直流電。 Fig. 1 shows a logic diagram of an example of an embodiment of the present invention. The core of the solar antenna array may have a number of antennas 10 which are separated by a power line 13 and a ground line 14. The power line and the ground line can be coupled to the antenna through the turner diodes 11 and 12, respectively. When the antenna is excited by visible light, current can flow from the ground line to the power line, thereby generating semi-rectified electrical energy. Those skilled in the art can understand that additional circuit systems such as switching capacitors and decoupling capacitors can be included on the periphery of the solar antenna array, hoping to generate stable direct current with a voltage suitable for commercial applications.

為了使天線有效率地接收可見光，天線若是所擷取之光波長的¼或½，可能會有所助益，端視天線是否耦合至現存接地平面而定。為了產生此類小型結構，無需昂貴的遮罩作業，可建立用來製造天線之模板。 In order for the antenna to receive visible light efficiently, it may be helpful if the antenna is ¼ or ½ of the wavelength of the light picked up, depending on whether the antenna is coupled to an existing ground plane. In order to produce such a small structure, there is no need for expensive masking operations, and a template for manufacturing the antenna can be established.

現請參照圖4，其為此一模板之一項實施例的俯視圖之一實例。模板可具有數列水平v形凹槽40，任一側係由一個大型v形脊41及一個小型v形脊42所約束。這些脊可交跨天線陣列。為了易於產生V形結構，模板可由晶向為(1,1,1)之矽晶圓形成。 Please refer to FIG. 4, which is an example of a top view of an embodiment of a template. The template may have several rows of horizontal v-shaped grooves 40, and either side is bound by a large v-shaped ridge 41 and a small v-shaped ridge 42. These ridges can cross the antenna array. In order to easily produce a V-shaped structure, the template can be formed from a silicon wafer with a crystal orientation of (1, 1, 1).

現請參照圖2a、2b及2c，其係可用於產生模板之第一組步驟順著Y方向之截面的實例。一開始，圖2a之矽晶圓21可在正阻劑中用幾乎最小尺寸的線路來製作圖型，正阻劑可經垂直蝕刻以產生一系列小型溝槽23。這些溝槽後續可具有一層沉積於其上的蝕刻終止材料22，例如氧化矽或氮化矽。類似圖型可在負阻劑中形成，其中該類似圖型可由再沉積有一層蝕刻終止之幾乎最小尺寸的線路所組成，該層蝕刻終止可在溝槽23之間等間隔。 Now please refer to Figures 2a, 2b and 2c, which are examples of the cross-section along the Y direction of the first set of steps that can be used to generate the template. In the beginning, the silicon wafer 21 of FIG. 2a can be patterned with a circuit of almost the smallest size in a positive resist. The positive resist can be etched vertically to produce a series of small trenches 23. These trenches may subsequently have a layer of etch stop material 22, such as silicon oxide or silicon nitride, deposited thereon. A similar pattern can be formed in the negative resist, wherein the similar pattern can be composed of a layer of almost the smallest size line that is deposited with an etching stop, and the etching stop of this layer can be equally spaced between the trenches 23.

在下一個步驟中，如圖2b所示，阻劑線24及沉積材料22可形成V形槽蝕刻的蝕刻終止，其可移除矽晶圓25之一部分，留下交錯的大型脊26及小型脊27。隨後，在圖2c中，薄層蝕刻終止可在整體陣列上方沉積，其可附著至非(1,1,1)矽表面。後續的垂直蝕刻可用於將蝕刻終止從脊28之間的水平表面移除，隨同薄層矽29一同移除，留下沉積於大型脊及小型脊28上的薄層蝕刻終止。應知，用以建立圖2a所示溝槽23及阻劑線24圖型之遮罩步驟的對準組合，連同圖2b所示V形槽蝕刻的持續時間，可用於產生圖2c中適當的天線長度20。 In the next step, as shown in FIG. 2b, the resist line 24 and the deposition material 22 can form an etch stop for the V-groove etch, which can remove part of the silicon wafer 25, leaving interlaced large ridges 26 and small ridges 27. Subsequently, in Figure 2c, a thin layer of etch stop can be deposited over the overall array, which can be attached to non-(1,1,1) silicon surfaces. Subsequent vertical etching can be used to remove the etch stop from the horizontal surface between the ridges 28, along with the thin layer of silicon 29, leaving the thin layer of etch stop deposited on the large and small ridges 28. It should be understood that the alignment combination of the mask step used to create the pattern of the trench 23 and the resist line 24 shown in FIG. 2a, together with the duration of the V-groove etching shown in FIG. 2b, can be used to generate the appropriate Antenna length 20.

現請參照圖3a、3b、3c及3d，其係可用於產生模板之第二組步驟順著X方向之截面的實例。在圖3a中，等寬線路30及間隔之正規陣列可在介於小型及大型v形脊(舉例而言，可如上述予以製備)之間的扁平矽表面上製作圖型。後續的部分V形槽蝕刻可在阻劑線路30之間形成部分V形槽。若使用的是(1,1,1)矽材料，這可以不是對時間有嚴格要 求的步驟，因為蝕刻可偏好選擇矽的(1,1,1)表面，在完成凹槽時終止。接著，薄層蝕刻終止材料可在蝕刻好的V形槽33中沉積，其他部分則藉由將其卸下而移除，阻劑係用於V形槽32之圖型製作，如圖3b所示。將現存V形槽35中的材料當作蝕刻終止來進行另一V組蝕刻，可用於蝕刻出新的V形槽34，如圖3c所示。產生的凹槽圖型接著可除去蝕刻終止材料，並且後續可用一層材料來覆蓋，這層材料不會黏附至金屬天線，例如氮化矽36，如圖3d所示。 Now please refer to Figures 3a, 3b, 3c, and 3d, which are examples of cross-sections in the X direction that can be used to generate the second set of template steps. In FIG. 3a, a regular array of equal-width lines 30 and spaces can be patterned on a flat silicon surface between small and large v-shaped ridges (for example, can be prepared as described above). The subsequent partial V-groove etching can form a partial V-groove between the resist lines 30. If you are using (1,1,1) silicon material, this is not a strict time requirement The step of seeking, because the etching can prefer to choose the (1,1,1) surface of silicon, and it ends when the groove is completed. Then, a thin layer of etch stop material can be deposited in the etched V-shaped groove 33, and other parts are removed by unloading it. The resist is used for patterning of the V-shaped groove 32, as shown in Figure 3b. Show. The material in the existing V-shaped groove 35 is used as an etching stop to perform another group of V etching, which can be used to etch a new V-shaped groove 34, as shown in FIG. 3c. The resulting groove pattern can then be removed from the etch stop material, and can be subsequently covered with a layer of material that will not adhere to the metal antenna, such as silicon nitride 36, as shown in Figure 3d.

線路30在v形脊之間的對準不一定要確實，只要大到足以延伸到v形脊但不在其上方即可，因為圖3c中的初始V形槽蝕刻可能不會影響小型脊及大型脊28上的材料，如圖2c所示。儘管可如圖3a所示，使線路30及間隔31保持最小尺寸，但這可能不是很重要；更加重要的反而是要盡可能地使線路30的寬度與間隔31保持相等，以便盡量使V形槽保持相等深度。如此，在另一實施例中，線距若可比線寬及間隔保持更緊密的容差，圖3b中的V形槽蝕刻之後，便可進行阻劑移除並且繼續V形槽蝕刻，產生深度為兩倍之多一半的V形槽。在這種狀況中，順著Y方向形成溝槽可經放大以確保太陽能天線陣列之製作能夠順利。 The alignment of the line 30 between the v-shaped ridges does not have to be exact, as long as it is large enough to extend to the v-shaped ridge but not above it, because the initial V-groove etching in Figure 3c may not affect small ridges and large ridges. The material on the ridge 28 is shown in Figure 2c. Although it is possible to keep the minimum size of the line 30 and the interval 31 as shown in Figure 3a, this may not be very important; instead, it is more important to keep the width of the line 30 and the interval 31 as equal as possible so as to make the V-shaped The grooves are kept at equal depth. In this way, in another embodiment, if the line pitch can maintain a tighter tolerance than the line width and spacing, after the V-groove in Figure 3b is etched, the resist can be removed and the V-groove etching can continue to produce depth It is twice as much as half of the V-shaped groove. In this situation, the formation of grooves along the Y direction can be amplified to ensure smooth fabrication of the solar antenna array.

太陽能天線陣列模板可由部分或全部矽晶圓來建立。進一步列入考量的是，矽鑄錠能以切成長面板所需的方位來生長，或者可在矽沉積玻璃之長面板或其他適合結構上進行單晶矽退火。進一步列入考量的是，模板的尺寸僅需藉由將其可靠使用及再利用於製造太陽能天線陣列 的能力來決定。 The solar antenna array template can be built by part or all of the silicon wafer. It is further considered that the silicon ingot can be grown in the orientation required to cut the long faceplate, or single crystal silicon can be annealed on the long faceplate of silicon deposited glass or other suitable structures. Further consideration is that the size of the template only needs to be reliably used and reused to manufacture solar antenna arrays Ability to decide.

現請參照圖5a、5b、5c及5d，其係根據本發明之一實施例，可用於製造太陽能天線陣列之第一組步驟之X方向截面的實例。圖5a展示適合的傳導材料沉積到模板50之V形槽上形成傳導線51的結果，該等傳導線可變為天線。舉例而言，這可藉由使用低壓化學氣相沉積(LPCVD)設備來達成。在一項實施例中，鎳因為不會附著至氮化矽模板而可予以使用。為了建立可處理兆赫頻率之金屬氧化物金屬(MOM)整流二極體，材料51的截面可形成有小於40nm之¼圓半徑，但V形槽的尺寸可能大很多，因為材料量是由沉積時間來決定，而不是V形槽的尺寸。形成合理的天線陣列可能需要用到加熱之模板、使模板振動、或在傾斜高達45度之模板上沉積金屬、或這些程序之任何組合。一層諸如聚醯胺之聚合物材料52可接著在模板上沉積，如圖5b所示，並且可固化到足以將聚合物材料52連同傳導線51從模板剝離，如圖5c所示。可垂直於天線，順著X方向進行剝離，以免天線因剝離程序而斷裂。接著，可在傳導線51上生長薄層氧化物53，如圖5d所示。氧化層在天線的端部可小於6nm。 Please refer to FIGS. 5a, 5b, 5c, and 5d, which are examples of the X-direction cross-section of the first set of steps that can be used to manufacture a solar antenna array according to an embodiment of the present invention. Fig. 5a shows the result of depositing suitable conductive materials on the V-shaped grooves of the template 50 to form conductive lines 51, which can become antennas. For example, this can be achieved by using low pressure chemical vapor deposition (LPCVD) equipment. In one embodiment, nickel can be used because it does not adhere to the silicon nitride template. In order to create a metal oxide metal (MOM) rectifier diode that can handle megahertz frequencies, the cross section of material 51 can be formed with a ¼ circle radius of less than 40 nm, but the size of the V-shaped groove may be much larger because the amount of material is determined by the deposition time To decide, not the size of the V-groove. Forming a reasonable antenna array may require the use of a heated template, vibrating the template, or depositing metal on a template tilted up to 45 degrees, or any combination of these procedures. A layer of polymer material 52 such as polyamide can then be deposited on the template, as shown in Figure 5b, and can be cured enough to peel the polymer material 52 together with the conductive lines 51 from the template, as shown in Figure 5c. It can be perpendicular to the antenna and stripped along the X direction to prevent the antenna from breaking due to the stripping process. Next, a thin layer of oxide 53 can be grown on the conductive line 51, as shown in FIG. 5d. The oxide layer can be less than 6nm at the end of the antenna.

現請參照圖6a、6b、及6c，其係可用於製造太陽能天線陣列之第二組步驟之Y方向截面的實例。如圖6a所示，聚合物材料52從模板剝離時，可從如圖4中所示模板上之大型及小型v形脊41、42得到大型及小型凹穴61、62。為了使天線53與後續金屬沉積保持絕緣，接著可在天線陣列上 沉積薄蓋玻璃層60。在一項實施例中，可添增短蝕刻以確保天線53端部的氧化物得以曝露。其次，如圖6b所示，可沉積並且研磨電力線材料63，以將額外的材料從天線陣列移除，留下有差別的電力線，如圖6b所示。可沉積足以填充小凹穴62的材料量，但僅部分填充大型凹穴61。在另一實施例中，可在沉積材料上沉積/生長薄層非黏附材料，以便輕易移除研磨殘渣，研磨後可增添另一短蝕刻，以便再次確保天線53端部的氧化物得以曝露。如圖6c所示，可沉積接地線材料65並予以從陣列的某些部分研磨掉以形成接地線，所用的方式類似於用於電力線的程序，如圖6d所示。在另一實施例中，電力線及接地線分別可以是有韌性的金屬，例如鋁及金。 Now please refer to FIGS. 6a, 6b, and 6c, which are examples of Y-direction cross-sections of the second set of steps that can be used to manufacture a solar antenna array. As shown in FIG. 6a, when the polymer material 52 is peeled from the template, large and small cavities 61, 62 can be obtained from the large and small v-shaped ridges 41, 42 on the template as shown in FIG. In order to keep the antenna 53 insulated from subsequent metal deposition, it can then be placed on the antenna array A thin cover glass layer 60 is deposited. In one embodiment, a short etch may be added to ensure that the oxide at the end of the antenna 53 is exposed. Second, as shown in Figure 6b, the power line material 63 can be deposited and ground to remove additional material from the antenna array, leaving a differentiated power line, as shown in Figure 6b. An amount of material sufficient to fill the small cavity 62 can be deposited, but only partially fills the large cavity 61. In another embodiment, a thin layer of non-adhesive material can be deposited/grown on the deposition material to easily remove the polishing residue, and another short etch can be added after polishing to again ensure that the oxide at the end of the antenna 53 is exposed. As shown in Figure 6c, the ground wire material 65 can be deposited and ground away from certain parts of the array to form the ground wire in a manner similar to the procedure used for power wires, as shown in Figure 6d. In another embodiment, the power line and the ground line can be made of ductile metals, such as aluminum and gold.

在製作程序之又另一實施例中，模板可進行清潔、視需要修理、並且再利用，以便產生複數個天線陣列。 In yet another embodiment of the production process, the template can be cleaned, repaired as necessary, and reused to generate a plurality of antenna arrays.

應知，模板之設計及相關天線陣列程序可經最佳化，以藉由使模板及天線陣列程序兩者的成本降到最低而使得製作程序的總體成本降到最低，同時使模板再利用及天線陣列產出達到最大。 It should be understood that the design of the template and related antenna array procedures can be optimized to minimize the overall cost of the manufacturing process by minimizing the cost of both the template and the antenna array procedure, and at the same time enable the reuse and reuse of the template. The output of the antenna array is maximized.

在模板建構及天線陣列程序之又另一實施例中，大部分天線陣列可建構在模板上，而且只有研磨並將保護層塗敷至天線陣列可在將其從模板移除後接著進行。 In yet another embodiment of the template construction and antenna array procedure, most of the antenna array can be constructed on the template, and only grinding and applying the protective layer to the antenna array can be performed after removing it from the template.

現請參照圖12a、12b及12c，根據本發明之一實施例，所示為模板在製作期間Y方向截面的實施例。在這種狀況中，如圖12b所示，垂直側V形槽123可藉由阻劑120遮 罩來蝕刻，首先，如圖12a所示，進行電力線122及接地線121之垂直蝕刻，接著如圖12b所示，進行V形槽蝕刻123。阻劑可接著再填充到V形槽溝槽125內，並且研磨掉以使矽124曝露，如圖12c所示。此阻劑可在後續X方向蝕刻當作蝕刻終止使用。 Referring now to FIGS. 12a, 12b, and 12c, according to an embodiment of the present invention, an embodiment of the Y-direction cross-section of the template during production is shown. In this situation, as shown in Figure 12b, the vertical side V-shaped groove 123 can be covered by the resist 120 The mask is etched. First, as shown in FIG. 12a, the power line 122 and the ground line 121 are vertically etched, and then, as shown in FIG. 12b, the V-groove etching 123 is performed. The resist can then be refilled into the V-groove groove 125 and ground away to expose the silicon 124, as shown in Figure 12c. This resist can be used as an etching stop in subsequent X-direction etching.

現請參照圖13a、13b、13c及13d，根據本發明之一實施例，所示為模板在製作期間順著X方向之一實例的截面。可形成經遮罩之阻劑圖型130，之後可進行V形槽蝕刻，如圖13a所示。接著可再塗敷並且研磨掉阻劑，在現存V形槽132中留下阻劑，並且可進行另一V形槽蝕刻，建立另一組V形槽133，如圖13b所示。接著可移除阻劑，如圖13c所示，並且可將薄層非黏附材料134塗敷至模板，如圖13d所示。與先前X方向V形槽程序不同的是，如圖3a、3b、3c及3d所示，目前的程序不需要進行蝕刻終止之沉積或其後續之卸下。 Referring now to FIGS. 13a, 13b, 13c, and 13d, according to an embodiment of the present invention, a cross section of an example of the template along the X direction during production is shown. A masked resist pattern 130 can be formed, and then V-groove etching can be performed, as shown in FIG. 13a. Then, the resist can be re-coated and ground away, leaving the resist in the existing V-groove 132, and another V-groove etching can be performed to create another set of V-grooves 133, as shown in FIG. 13b. The resist can then be removed, as shown in Figure 13c, and a thin layer of non-adhesive material 134 can be applied to the template, as shown in Figure 13d. Different from the previous X-direction V-groove procedure, as shown in FIGS. 3a, 3b, 3c, and 3d, the current procedure does not require etching termination deposition or subsequent removal.

現請參照圖14，根據本發明之一實施例，所示為一段模板之一實例的上剖視圖。在這種狀況中，儘管天線X方向V形槽140與圖4所示的v形凹槽40可實質相同，相較於圖4所示之V形脊41及42，V形槽溝槽141及142可反向。這可在從模板移除完成之天線陣列之前，先用來促進電力線及接地線在模板上之沉積。 Referring now to FIG. 14, according to an embodiment of the present invention, shown is an upper cross-sectional view of an example of a section of template. In this situation, although the V-shaped groove 140 in the X direction of the antenna may be substantially the same as the V-shaped groove 40 shown in FIG. 4, compared with the V-shaped ridges 41 and 42 shown in FIG. 4, the V-shaped groove groove 141 And 142 can be reversed. This can be used to facilitate the deposition of power lines and ground lines on the template before removing the completed antenna array from the template.

現請參照圖15a至15f，根據本發明之一實施例，所示為天線陣列在模板上製作期間之截面的實例。一開始，如圖15a所示，可將諸如鎳等適合的傳導材料沉積到模板上 以形成天線151，包括有溝槽152之底端，接著可進行薄氧化物步驟。其次，如圖15b所示，可沉積153蓋玻璃，至少可沉積到X方向V形槽頂端的位置。在一項實施例中，可添增短蝕刻以確保天線151端部的氧化物得以曝露。就理想而言，如圖13d所示，其下面可選擇不會附著至模板上非黏附層134的玻璃及傳導層。任選的是，電力線及接地線的傳導材料若未能從現存非黏附層輕易移除，在下一個步驟中，可沉積一薄層之另一非黏附材料154，如圖15c所示。以如同圖6a、6b及6c所示程序的方式，圖15d中所示之電力線155及圖15e中所示之接地線156可各別沉積並研磨掉(視需要)傳導材料。接著，可沉積圖15f中所示之撓性聚合物157以形成襯底，以便將天線陣列從模板剝離。 Referring now to FIGS. 15a to 15f, according to an embodiment of the present invention, examples of cross-sections of the antenna array during fabrication on the template are shown. Initially, as shown in Figure 15a, a suitable conductive material such as nickel can be deposited on the template To form the antenna 151, including the bottom end of the trench 152, a thin oxide step may be performed. Secondly, as shown in Figure 15b, 153 cover glass can be deposited, at least to the top of the V-shaped groove in the X direction. In one embodiment, a short etch may be added to ensure that the oxide at the end of the antenna 151 is exposed. Ideally, as shown in FIG. 13d, a glass and conductive layer that will not adhere to the non-adhesive layer 134 on the template can be selected below it. Optionally, if the conductive material of the power line and the ground line cannot be easily removed from the existing non-adhesive layer, in the next step, a thin layer of another non-adhesive material 154 can be deposited, as shown in FIG. 15c. In the same manner as the procedures shown in FIGS. 6a, 6b, and 6c, the power line 155 shown in FIG. 15d and the ground line 156 shown in FIG. 15e can be separately deposited and ground away (if necessary) conductive material. Next, the flexible polymer 157 shown in FIG. 15f can be deposited to form a substrate to peel off the antenna array from the template.

現請參照圖16a，根據本發明之一實施例，所示為從模板剝離並且翻轉，添增有蓋玻璃層之天線陣列之截面的一實例。任選的是，可將此厚蓋玻璃向下研磨到電力162及接地161傳導材料以移除非必要層，如圖16b所示，並且添增附加鈍化材料163以覆蓋曝露之傳導材料，如圖16c所示。應知，如同第一程序中所述之材料及步驟可在此製作程序中使用，並且可添增其他製作步驟，或可視需要修改本文中所述的步驟以改善天線陣列之產出、或模板之保存。 Referring now to FIG. 16a, according to an embodiment of the present invention, an example of a cross-section of an antenna array that is peeled from the template and turned over to add a cover glass layer is shown. Optionally, this thick cover glass can be ground down to the power 162 and ground 161 conductive materials to remove unnecessary layers, as shown in Figure 16b, and additional passivation materials 163 are added to cover the exposed conductive materials, such as Shown in Figure 16c. It should be understood that the materials and steps described in the first procedure can be used in this production process, and other production steps can be added, or the steps described in this article can be modified as needed to improve the output of the antenna array or template The preservation.

現請參照圖7，根據本發明之一實施例，所示為完成之太陽能天線陣列之一實例的Y截面。在這種狀況中，可添增清透蓋層75以保護陣列，並且可將實心背板74附接 至聚合物材料52以使得結構更具有剛性。由於天線上生長氧化物的關係，天線53與接地線65之間可存在MOM二極體71，而天線53與電力線63之間可存在另一MOM二極體72。在另一實施例中，背板74可以是用於將未遭受天線陣列吸收之光反射的鏡面。在又另一實施例中，背板74可以是傳導接地平面，並且可調整聚合物材料52之厚度以使得天線陣列可作用為最佳帶線天線陣列。 Referring now to FIG. 7, according to an embodiment of the present invention, a Y-section of an example of a completed solar antenna array is shown. In this situation, a clear cover layer 75 can be added to protect the array, and a solid back plate 74 can be attached To the polymer material 52 to make the structure more rigid. Due to the growth of oxide on the antenna, a MOM diode 71 may exist between the antenna 53 and the ground line 65, and another MOM diode 72 may exist between the antenna 53 and the power line 63. In another embodiment, the back plate 74 may be a mirror surface for reflecting light not absorbed by the antenna array. In yet another embodiment, the backplane 74 can be a conductive ground plane, and the thickness of the polymer material 52 can be adjusted so that the antenna array can function as an optimal stripline antenna array.

現請參照圖8，所示反映本發明之進一步實施例的一實例。太陽能天線陣列80可最佳地吸收順著天線之方向(例如Y方向)偏振的光，其大致只有陽光能量的½。來自太陽之隨機偏振光的其他分量，例如X分量，可透過太陽能天線陣列傳播或從太陽能天線陣列反射出去。因此，在另一實施例中，這兩個太陽能天線陣列80與82可夾在一起，兩者之間具有光旋轉材料81，例如液晶。再者，一層反射材料83可附接至結構之背側，以將剩餘的光反射回到夾起來的陣列內。進一步列入考量的是，如圖7所示之聚合物材料52及傳導接地背板74可具有光學透明性，並且可包括於此一夾起來的結構中。 Now please refer to FIG. 8, which shows an example reflecting a further embodiment of the present invention. The solar antenna array 80 can best absorb light polarized in the direction of the antenna (for example, the Y direction), which is roughly ½ of the solar energy. Other components of randomly polarized light from the sun, such as the X component, can propagate through or reflect off the solar antenna array. Therefore, in another embodiment, the two solar antenna arrays 80 and 82 can be sandwiched together with a light rotating material 81, such as liquid crystal, between them. Furthermore, a layer of reflective material 83 can be attached to the back side of the structure to reflect the remaining light back into the clamped array. It is further considered that the polymer material 52 and the conductive grounding back plate 74 shown in FIG. 7 may have optical transparency and may be included in this sandwiched structure.

在本發明之又另一實施例中，材料81可具有光學清透性，並且如圖10所示，這兩個太陽能天線陣列101與102可垂直互夾，如重疊段100中所示。 In yet another embodiment of the present invention, the material 81 may have optical clarity, and as shown in FIG. 10, the two solar antenna arrays 101 and 102 may be vertically clamped to each other, as shown in the overlapping section 100.

現請參照圖9，根據本發明之一實施例，所示為太陽能天線陣列之一實例其中一段的俯視圖。儘管可見光中的最高能量大致可位於光譜的藍綠段(波長500nm左右)， 仍然可以期望吸收儘可能多的可見光譜。因此，可以期望改變天線長度以涵蓋大部分可見光譜，例如自400nm至720nm。這可藉由跨陣列前後改變各別天線列的尺寸來達成，範圍各92從兩個100nm之¼波長段到兩個180nm之¼波長段，或者，若接地平面未添增至陣列，可達這些尺寸的兩倍。圖9中的圖90可用於涵蓋自400nm至720nm分成八等節的光譜，但在重複前，節長變化可以更細小並且可以出現更多節，使得稜鏡可運用於將適當頻率之光引導到最相應的天線。 Referring now to FIG. 9, according to an embodiment of the present invention, a top view of a section of an example of a solar antenna array is shown. Although the highest energy in visible light can be roughly located in the blue-green range of the spectrum (wavelength around 500nm), It can still be expected to absorb as much of the visible spectrum as possible. Therefore, it may be desirable to change the antenna length to cover most of the visible spectrum, for example from 400nm to 720nm. This can be achieved by changing the size of the individual antenna columns before and after the array, ranging from two ¼ wavelength bands of 100 nm to two ¼ wavelength bands of 180 nm, or if the ground plane is not added to the array, Twice these dimensions. Figure 90 in Figure 9 can be used to cover the spectrum divided into eight equal sections from 400nm to 720nm, but before repetition, the change in section length can be smaller and more sections can appear, so that 稜鏡 can be used to guide light of appropriate frequency To the most corresponding antenna.

所屬技術領域中具有通常知識者將了解的是，本發明中所述的尺寸可能難以製作，並且可能容易有缺陷，特別是介於天線與電力線或接地線之間的開路(「斷開」)及/或短路(「短接」)。 Those with ordinary knowledge in the art will understand that the dimensions described in the present invention may be difficult to make and may be prone to defects, especially open circuits ("disconnects") between the antenna and the power line or ground line And/or short circuit ("short circuit").

現請參照圖11a，根據本發明之一實施例，所示為天線陣列之一實例之一段的圖，其中所示天線陣列具備有缺陷的二極體，係繪示成電阻器，將隨機天線連接至電力112或接地113。在一些狀況中，天線111可具有兩個短接之二極體。此類缺陷可在電力線與接地線之間產生短接或部分短接。 Referring now to FIG. 11a, according to an embodiment of the present invention, a diagram of a segment of an example of an antenna array is shown. The antenna array shown has a defective diode, which is shown as a resistor, and the random antenna Connect to power 112 or ground 113. In some cases, the antenna 111 may have two shorted diodes. Such defects can cause short or partial shorts between the power line and the ground line.

在另一實施例中，天線陣列可藉由在接地線與電力線之間施加足以迫使單一透納二極體通過其負電阻，但不足以接通良好二極體對的電壓來測試並且固定。這可選擇性地驅使電流通過短接之有缺陷的二極體，並且可藉此按照類似於保險絲的方式將電阻器加熱到足以將短接斷開， 這樣可以消除介於電力與接地之間的短接。 In another embodiment, the antenna array can be tested and fixed by applying a voltage between the ground line and the power line that is sufficient to force a single turner diode through its negative resistance, but not enough to connect a good diode pair. This can selectively drive current through the defective diode of the short circuit, and can thereby heat the resistor enough to break the short circuit in a fuse-like manner. This eliminates the short circuit between power and ground.

現請參照圖11b，根據本發明之一實施例，所示為天線陣列之一實例之一段的圖，其中所示的天線陣列具備有缺陷的二極體，該等二極體已熔斷，並且係繪示成斷開之電容器115，將隨機天線元件連接至電力112或接地113。在具有兩個短接之二極體114的天線中，電阻器中最弱的一個可熔斷116，藉此消除短接。 Referring now to FIG. 11b, according to an embodiment of the present invention, a diagram of an example of an antenna array is shown, in which the antenna array is provided with defective diodes, which have been fused, and It is shown as a disconnected capacitor 115, connecting the random antenna element to the power 112 or the ground 113. In an antenna with two shorted diodes 114, the weakest one of the resistors can be fusible 116, thereby eliminating the shorting.

在又另一實施例中，天線陣列的間隔可緊密到足以藉由陣列使因為消除隨機之有缺陷的天線導致的電力產量衰減作用降到最低。 In yet another embodiment, the spacing of the antenna arrays can be close enough to minimize the power output attenuation caused by the elimination of random defective antennas.

在本發明之另一實施例中，天線可由生長於電力線與接地線之間的奈米碳管建構。在這種狀況中，模板主要可由等深度的V形槽建構。 In another embodiment of the present invention, the antenna can be constructed by carbon nanotubes grown between the power line and the ground line. In this situation, the template can mainly be constructed by V-shaped grooves of equal depth.

現請參照圖18a至18d，其為模板製作之一實例之截面。可將正規寬度圖型曝照成阻劑181，並且可在短垂直電漿蝕刻之後進行後續V形槽蝕刻，在殘餘阻劑之間留下第一組V形槽180。任選的是，p型摻雜晶圓可用於建構模板，並且可在初始V形槽上進行188選擇性n型摻雜擴散。之後，經洗淨之晶圓可塗布有諸如氮化矽(SiN)或碳化矽(SiC)等薄層非黏附材料，如圖18b所示塗布第一組V形槽183及晶圓之頂端表面。在研磨晶圓以將非蝕刻表面182上之非黏附材料移除之後，可蝕刻第二組V形槽184，留下受到非黏附材料保護之第一組185，如圖18c所示。最後，可添增非黏弣材料附加層至晶圓，覆蓋所有V形槽186，如圖18d所示。第 一組V形槽187可蝕刻成比第二組V形槽更寬以補償非黏附材料之不同厚度。替代地，諸如氮化矽及碳化矽等不同非黏附材料可分別在第一185及第二184組V形槽中沉積。產生的模板以交錯方式含有電力190及接地192V形槽指部，各係連接至電力191及接地193V形槽結部，在指部的另一端具有交錯轉折194及195，如圖19a所示。亦列入考量的是，電力線196及接地線197之V形槽指部在水平及垂直方向上可能不同，如圖19b所示。 Please refer to Figures 18a to 18d, which are cross-sections of an example of template making. The regular width pattern can be exposed to the resist 181, and subsequent V-groove etching can be performed after the short vertical plasma etching, leaving the first set of V-grooves 180 between the residual resist. Optionally, p-type doped wafers can be used to construct templates, and 188 selective n-type doping diffusion can be performed on the initial V-groove. Afterwards, the cleaned wafer can be coated with a thin layer of non-adhesive material such as silicon nitride (SiN) or silicon carbide (SiC), as shown in Figure 18b, coating the first set of V-grooves 183 and the top surface of the wafer . After grinding the wafer to remove the non-adhesive material on the non-etched surface 182, the second set of V-shaped grooves 184 can be etched, leaving the first group 185 protected by the non-adhesive material, as shown in FIG. 18c. Finally, an additional layer of non-adhesive material can be added to the wafer to cover all the V-shaped grooves 186, as shown in Figure 18d. First One set of V-shaped grooves 187 can be etched wider than the second set of V-shaped grooves to compensate for the different thickness of the non-adhesive material. Alternatively, different non-adhesive materials such as silicon nitride and silicon carbide can be deposited in the first 185 and second 184 sets of V-grooves, respectively. The resulting template contains power 190 and ground 192 V-groove fingers in a staggered manner, each connected to power 191 and ground 193 V-groove knots, with staggered turns 194 and 195 at the other end of the fingers, as shown in Figure 19a. It is also considered that the V-groove fingers of the power line 196 and the ground line 197 may be different in the horizontal and vertical directions, as shown in FIG. 19b.

現請參照圖20a至20d，其為根據本發明之一實施例，天線陣列在製作期間之一實例的截面。一開始，諸如鐵、鎳、鈷或一些其他磁性金屬等奈米碳管催化劑可電弧濺鍍到模板上，在V形槽中形成一層任選小型、氧化球。諸如金、銀、鋁或一些其他適合金屬或合金等導體可在V形槽中沉積，使得催化球201可在導體202之邊緣上懸置，如圖20a所示。替代地，模板中兩組V形槽之間建立的PN二極體可逆偏，因而可選擇性地在一些V形槽207中沉積奈米碳管催化劑。諸如聚醯胺或一些其他適合材料等聚合物203可接著在模板上方塗布，如圖20b所示。固化聚合物203之後，整體結構可從模板移除。任選的是，氧化球205可進行回蝕刻，曝露催化球之金屬，如圖20c所示。之後，電力線及接地線可加熱並且分別充電至負電壓及正電壓，可施加任選磁場，並且可將諸如甲烷或乙炔等烴類引入含有太陽能電池之沉積室，以在電力線與接地線之間生長奈米碳管，如圖20d所示。奈米管可自帶負電之電力線上之催化球生長至 帶正電之接地線208上之金屬。將奈米管連接至導體後，可將導體加熱，從而可將奈米碳管退火成傳導材料。 Please refer to FIGS. 20a to 20d, which are cross-sections of an example of an antenna array during fabrication according to an embodiment of the present invention. In the beginning, carbon nanotube catalysts such as iron, nickel, cobalt or some other magnetic metals can be arc sputtered onto the template to form a layer of optional small, oxide balls in the V-shaped groove. Conductors such as gold, silver, aluminum or some other suitable metals or alloys can be deposited in the V-shaped groove so that the catalytic ball 201 can be suspended on the edge of the conductor 202, as shown in FIG. 20a. Alternatively, the PN diodes established between the two sets of V-shaped grooves in the template are reversibly biased, so that carbon nanotube catalysts can be selectively deposited in some V-shaped grooves 207. Polymer 203, such as polyamide or some other suitable material, can then be coated over the template, as shown in Figure 20b. After curing the polymer 203, the overall structure can be removed from the template. Optionally, the oxide ball 205 can be etched back to expose the metal of the catalytic ball, as shown in Figure 20c. After that, the power line and the grounding line can be heated and charged to negative and positive voltages, respectively, an optional magnetic field can be applied, and hydrocarbons such as methane or acetylene can be introduced into the deposition chamber containing solar cells to be between the power line and the grounding line Grow carbon nanotubes, as shown in Figure 20d. Nanotubes can grow from the catalytic ball on the negatively charged power line to The metal on the positively charged ground wire 208. After connecting the nanotube to the conductor, the conductor can be heated, so that the carbon nanotube can be annealed into a conductive material.

現請參照圖21a至21d，其為根據本發明之另一實施例，天線陣列在製作期間之一實例的截面。在此實施例中，V形槽可僅用導體211來填充，用聚合物212來覆蓋，如圖21a所示，並且從模板移除。電力線及接地線接著可分別充電至負電壓及正電壓，而帶電氧化催化球可選擇性地在接地線213上沉積，留下沒有催化球之電力線214，如圖21b所示。之後，任選的是，可將曝露之氧化物從催化球215蝕刻掉，如圖21c所示。隨後，奈米碳管可順著反方向218自接地線朝電力線上之金屬生長，在奈米碳管之尖端上攜載催化球，使得最短的奈米碳管217可首先連接，並且更長的奈米碳管218可隨後連接，如圖21d所示。導體、催化球及薄氧化物可形成金屬氧化物金屬(MOM)二極體。依照這種方式，如圖17所示，整流MOM二極體171可連接至電力線173及天線170，而天線172另一端可連接至接地線。催化球之直徑可決定奈米管之直徑，奈米碳管之結構或對掌性可部分由施加的磁場來決定，而奈米管的生長方向可由介於電力線與接地線之間的電場方向來決定，連接則是按照長度順序依次進行，可如圖21d所示。 Please refer now to FIGS. 21a to 21d, which are cross-sections of an example of an antenna array during fabrication according to another embodiment of the present invention. In this embodiment, the V-shaped groove can be filled with only the conductor 211, covered with the polymer 212, as shown in FIG. 21a, and removed from the template. The power line and the ground line can then be charged to a negative voltage and a positive voltage, respectively, and the charged oxidation catalytic ball can be selectively deposited on the ground line 213, leaving the power line 214 without the catalytic ball, as shown in FIG. 21b. Afterwards, optionally, the exposed oxide can be etched away from the catalytic ball 215, as shown in Figure 21c. Subsequently, the carbon nanotube can grow from the ground line to the metal on the power line in the opposite direction 218, and the catalytic ball is carried on the tip of the carbon nanotube, so that the shortest carbon nanotube 217 can be connected first and longer The carbon nanotubes 218 can then be connected, as shown in Figure 21d. Conductors, catalytic balls, and thin oxides can form metal oxide metal (MOM) diodes. In this way, as shown in FIG. 17, the rectifying MOM diode 171 can be connected to the power line 173 and the antenna 170, and the other end of the antenna 172 can be connected to the ground line. The diameter of the catalytic ball can determine the diameter of the nanotube, the structure or the oppositeness of the carbon nanotube can be partially determined by the applied magnetic field, and the growth direction of the nanotube can be determined by the direction of the electric field between the power line and the ground line To decide, the connection is made in order of length, as shown in Figure 21d.

現請參照圖24，其為根據本發明之一實施例，天線陣列之一實例之有標註的截面，天線吸收電磁頻率的效率可顯著偏低，電磁頻率偏離天線理想頻率更遠，或電磁波離天線更遠。這些效應可能顯著限制不同長度之正規二 維陣列天線的效率。為了吸收可見及紅外線太陽能最佳量，天線的長度可能必須在80奈米與460奈米之間變動。奈米管可順著電場方向生長至介於80奈米與460奈米之間的距離，該電場可在含有催化球之導體之間施加。生長量可與電場強度及催化球密度有關，可經選擇以使產生的天線達到最大效率。太陽能天線陣列之電力線及接地線可藉由沉積約190奈米之催化金屬及金屬241、然後沉積約40奈米之絕緣聚合物242來建構，所使用的是具有V形槽之模板，該等V形槽可已用約½微米尺寸之不昂貴遮罩建構完成，並且可塗布有氮化矽、碳化矽及/或一些可對沉積之導體具備非黏附性的其他材料。由於塗布及任何任選蝕刻的關係，產生的電力線及接地線240可比原始蝕刻之V形槽淺約20奈米。 Please refer to FIG. 24, which is a marked section of an example of an antenna array according to an embodiment of the present invention. The efficiency of the antenna in absorbing electromagnetic frequencies may be significantly lower, and the electromagnetic frequency may deviate further from the ideal frequency of the antenna, or electromagnetic waves may deviate from The antenna is farther. These effects may significantly limit the normal two of different lengths The efficiency of a three-dimensional array antenna. In order to absorb the optimal amount of visible and infrared solar energy, the length of the antenna may have to vary between 80 nm and 460 nm. Nanotubes can grow to a distance between 80 nm and 460 nm along the direction of the electric field, which can be applied between conductors containing catalytic balls. The amount of growth can be related to the strength of the electric field and the density of the catalytic ball, and can be selected to maximize the efficiency of the antenna produced. The power line and ground line of the solar antenna array can be constructed by depositing about 190 nanometers of catalytic metal and metal 241, and then depositing about 40 nanometers of insulating polymer 242. A template with V-shaped grooves is used. The V-shaped groove can be constructed with an inexpensive mask of about ½ micrometer in size, and can be coated with silicon nitride, silicon carbide, and/or some other material that can be non-adhesive to the deposited conductor. Due to coating and any optional etching, the generated power line and ground line 240 can be about 20 nm shallower than the original etched V-shaped groove.

現請參照圖22a及22b，其為太陽能陣列上與圖19a及19b中所示數段模板對應之電力線與接地線之兩種不同組態的俯視圖。在任一種組態中，此陣列可能受限於V形槽大小之線路，因為傳導性可能要求電力線及接地線必須在陣列各處維持同樣的高度。在圖22a所示之一種組態中，陣列可由電力線220及接地線221之交錯指部組成，具有垂直的結部222及223，而且可能視需要有多個結部224及225，從而保持低電流密度及電阻。在另一組態中，陣列可含有電力線226及接地線227之不同指部圖型，從而可使水平及垂直方向之奈米管天線獲得局部平衡，如圖22b所示。此類組態可消除對兩個夾在一起垂直對準之面板的需求。 Now please refer to FIGS. 22a and 22b, which are top views of two different configurations of power lines and grounding lines corresponding to the segments of the template shown in FIGS. 19a and 19b on the solar array. In either configuration, the array may be limited by the size of the V-groove, because conductivity may require that the power and ground lines must maintain the same height throughout the array. In a configuration shown in Figure 22a, the array can be composed of interleaved fingers of the power line 220 and the ground line 221, with vertical junctions 222 and 223, and may have multiple junctions 224 and 225 as needed to keep low Current density and resistance. In another configuration, the array may contain different finger patterns for the power line 226 and the ground line 227, so that the horizontal and vertical nanotube antennas can be locally balanced, as shown in Figure 22b. This type of configuration eliminates the need for two panels that are clamped together and aligned vertically.

亦列入考量的是，在電力線及接地線初始充電前， 探針墊及更大線略可先在陣列上分離沉積。 It is also considered that before the initial charging of the power line and the ground line, Probe pads and larger wires can be deposited on the array first.

再者，列入考量的是，導體可以是銀、鋁、鉑、或另一可在與催化球氧化程序步驟相同或相鄰之程序步驟中氧化的合金。在電力線與接地線之間生長奈米碳管可接著在接地線與奈米碳管天線端部之間形成MoM二極體，並且在接地線與奈米碳管天線另一端之間形成碳金屬-氧化物-金屬二極體，所採用的方式類似於圖1所示之結構。 Furthermore, it is considered that the conductor can be silver, aluminum, platinum, or another alloy that can be oxidized in the same or adjacent process step as the catalytic ball oxidation process. Growing carbon nanotubes between the power line and the ground line can then form a MoM diode between the ground line and the end of the carbon nanotube antenna, and form carbon metal between the ground line and the other end of the carbon nanotube antenna -Oxide-metal diode, the method used is similar to the structure shown in Figure 1.

亦列入考量的是，可將圖11a及11b所示短接裝置測試及熔斷用的程序套用至奈米碳管天線，藉此斷開有缺陷的天線之至少一端。現請參照圖23，其為所具有之奈米碳管天線有缺陷之天線陣列之一實例的截面，建構太陽能天線陣列之後，一些個別奈米管可能不完整或不正確地連接至電力線230及/或接地線231。可用以下步驟來測試並且校正：A.將太陽能陣列上下翻轉，B.將電力線及接地線兩者接地，C.跨天線陣列並在天線陣列下面移動帶正電源，以便將鬆散之奈米管係拉到所連接電力線或接地線側邊後面，藉此使奈米管斷裂自由，以及D.移除任何鬆散的奈米管，從而使陣列斷裂。 It is also considered that the procedures for testing and fusing the shorting device shown in Figures 11a and 11b can be applied to the carbon nanotube antenna, thereby disconnecting at least one end of the defective antenna. Now please refer to Figure 23, which is a cross section of an example of an antenna array with defective carbon nanotube antennas. After the solar antenna array is constructed, some individual nanotubes may be incomplete or incorrectly connected to the power line 230 and /Or ground wire 231. The following steps can be used to test and calibrate: A. Turn the solar array upside down, B. Ground both the power line and the ground line, C. Cross the antenna array and move the positive power supply under the antenna array to connect the loose nanotube system Pull behind the side of the connected power line or ground line to free the nanotube to break, and D. Remove any loose nanotubes to break the array.

在本發明之另一實施例中，更大的結構可支撐陣列上方的蓋板以保護天線、電力線及接地線免受外部環境影響。現請參照圖25，其為具有蓋板之天線陣列之一實例的截面。藉由蝕刻模板外側周圍的大型V形槽，大板線251 可由聚醯胺建立。大V形槽方體亦可跨模板週期性蝕刻，從而可在天線陣列250上之電力線與接地線253之間建立大聚醯胺稜錐或根柱252之正規陣列，於是，可置放支撐透明玻璃(或其他透明到足以讓光通過之材料)板254以保護天線陣列。任選的是，若聚醯胺可充分透明，則可用反射鏡更換玻璃板，反射鏡可將可能已透過聚醯胺進入陣列之光反射回到天線。 In another embodiment of the present invention, a larger structure can support the cover plate above the array to protect the antenna, power line, and ground line from the external environment. Please refer to FIG. 25, which is a cross section of an example of an antenna array with a cover plate. By etching the large V-shaped groove around the outside of the template, the large plate line 251 Can be established by polyamide. The large V-shaped groove cube can also be periodically etched across the template, so that a regular array of large polyamide pyramids or posts 252 can be established between the power line on the antenna array 250 and the ground line 253, so that supports can be placed A transparent glass (or other material that is transparent enough for light to pass through) plate 254 protects the antenna array. Optionally, if the polyamide is sufficiently transparent, the glass plate can be replaced with a reflector, which can reflect light that may have entered the array through the polyamide back to the antenna.

所屬技術領域中具有通常知識者將了解的是，本發明不受限於以上特別展示及說明的內容。反而，本發明之範疇同時包括有以上所述各種特徵之組合及次組合，並且包括有所屬技術領域中具有通常知識者只要閱讀前述說明便能進行的修改及變化，而且這些修改及變化不屬於先前技術。 Those with ordinary knowledge in the technical field will understand that the present invention is not limited to the content specifically shown and described above. On the contrary, the scope of the present invention also includes the combinations and sub-combinations of the various features described above, and includes modifications and changes that can be made by those with ordinary knowledge in the technical field as long as they read the foregoing description, and these modifications and changes do not belong to Prior art.

240‧‧‧電力線與接地線 240‧‧‧Power line and grounding line

241‧‧‧催化球及金屬 241‧‧‧Catalytic ball and metal

242‧‧‧絕緣聚合物 242‧‧‧Insulating polymer

Claims (8)

一種組配來將陽光轉換成電力之太陽能天線陣列，其包含有：具傾斜面之交錯電力線與接地線，其在一第一方向上均勻間隔，並在與該第一方向垂直之一第二方向上延伸，其中該等傾斜面自垂直於該第一方向與該第二方向之一第三方向以各別的角度延伸，及其中各別傾斜線的頂部與各別電力線與接地線的頂部之相交處形成在該第二方向上延伸的平行線，以及連接於相鄰之該等電力線與接地線的該等傾斜面之間的奈米碳管天線，其中該等奈米碳管天線的長度在該第一方向上變化，該變化係基於在連接於該等各別奈米碳管天線之間的各別相鄰之該等電力線與接地線之該等各別傾斜面上的位置。 A solar antenna array configured to convert sunlight into electricity, which includes: interlaced power lines and ground lines with inclined surfaces, which are evenly spaced in a first direction, and a second perpendicular to the first direction Extend in the direction, wherein the inclined surfaces extend at different angles from a third direction perpendicular to the first direction and the second direction, and the tops of the respective inclined lines and the tops of the respective power lines and ground lines The intersection of the two forms parallel lines extending in the second direction, and the carbon nanotube antennas connected between the inclined surfaces of the adjacent power lines and the ground line, wherein the carbon nanotube antennas The length changes in the first direction, and the change is based on the positions of the respective inclined surfaces of the respective adjacent power lines and ground wires connected between the respective carbon nanotube antennas. 如請求項1之太陽能天線陣列，其中：該等電力線與接地線更包含有一傳導金屬。 Such as the solar antenna array of claim 1, wherein: the power lines and the ground lines further include a conductive metal. 如請求項2之太陽能天線陣列，其中該傳導金屬包含有下列項目所組成群組中之至少一者：金、銀、鉑及鋁。 For example, the solar antenna array of claim 2, wherein the conductive metal includes at least one of the following items: gold, silver, platinum, and aluminum. 如請求項2之太陽能天線陣列，其中該等電力線與接地線其中一者更包含有催化球。 Such as the solar antenna array of claim 2, wherein one of the power line and the ground line further includes a catalytic ball. 如請求項4之太陽能天線陣列，其中該等催化球包含有塗布有氧化物之磁性傳導金屬。 Such as the solar antenna array of claim 4, wherein the catalytic balls include magnetic conductive metal coated with oxide. 如請求項5之太陽能天線陣列，其中該等催化球包含有 選自於由鎳、鐵及另一磁性金屬所組成群組之至少一種物質。 Such as the solar antenna array of claim 5, wherein the catalytic balls include At least one substance selected from the group consisting of nickel, iron and another magnetic metal. 如請求項1之太陽能天線陣列，其中該等奈米碳管天線係組配來涵蓋至少兩個光譜區域。 Such as the solar antenna array of claim 1, wherein the carbon nanotube antennas are assembled to cover at least two spectral regions. 如請求項1之太陽能天線陣列，其中該等奈米碳管天線係相對於該第二與該第三方向局部對準。 Such as the solar antenna array of claim 1, wherein the carbon nanotube antennas are locally aligned with respect to the second and third directions.
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