TWI701842B - Image sensor and manufacturing method thereof - Google Patents
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Description
本發明是有關於一種半導體元件及其製造方法,且特別是有關於一種影像感測器及其製造方法。The present invention relates to a semiconductor device and its manufacturing method, and more particularly to an image sensor and its manufacturing method.
目前有些種類的影像感測器(如,全域快門影像感測器(global shutter image sensor))具有位在基底中且用以儲存訊號的儲存節點(storage node)。然而,雜散光(stray light)會對儲存在儲存節點中的訊號造成干擾,而造成全域快門效率(global shutter efficiency,GSE)不佳。因此,如何有效地防止雜散光干擾為目前持續研究發展的目標。At present, some types of image sensors (eg, global shutter image sensors) have storage nodes located in the substrate and used to store signals. However, stray light (stray light) interferes with the signal stored in the storage node, resulting in poor global shutter efficiency (GSE). Therefore, how to effectively prevent stray light interference is the goal of continuous research and development.
本發明提供一種影像感測器及其製造方法,其可有效地防止雜散光干擾。The invention provides an image sensor and a manufacturing method thereof, which can effectively prevent the interference of stray light.
本發明提出一種影像感測器,包括基底、感光元件、摻雜區、第一閘極、開槽式遮光層與第二閘極。感光元件位在基底中。摻雜區位在感光元件的一側的基底中。第一閘極設置在摻雜區上方。第一閘極具有凹槽。開槽式遮光層設置在凹槽的表面上,且位在摻雜區上方。第二閘極設置在感光元件與摻雜區之間的基底上。The present invention provides an image sensor, which includes a substrate, a photosensitive element, a doped region, a first gate, a slotted light shielding layer and a second gate. The photosensitive element is located in the substrate. The doped area is located in the substrate on one side of the photosensitive element. The first gate is arranged above the doped region. The first gate has a groove. The slotted light shielding layer is arranged on the surface of the groove and is located above the doped area. The second gate is arranged on the substrate between the photosensitive element and the doped region.
依照本發明的一實施例所述,在上述影像感測器中,感光元件例如是光二極體。According to an embodiment of the present invention, in the above-mentioned image sensor, the photosensitive element is, for example, a photodiode.
依照本發明的一實施例所述,在上述影像感測器中,開槽式遮光層的材料例如是金屬矽化物。According to an embodiment of the present invention, in the above-mentioned image sensor, the material of the slotted light shielding layer is, for example, metal silicide.
依照本發明的一實施例所述,在上述影像感測器中,開槽式遮光層更可設置在第一閘極的頂面上。According to an embodiment of the present invention, in the above-mentioned image sensor, the slotted light-shielding layer may be further disposed on the top surface of the first gate electrode.
依照本發明的一實施例所述,在上述影像感測器中,開槽式遮光層的開口可朝向遠離基底的方向。According to an embodiment of the present invention, in the above-mentioned image sensor, the opening of the slotted light shielding layer can face away from the substrate.
依照本發明的一實施例所述,在上述影像感測器中,開槽式遮光層可接地或電連接至偏壓。According to an embodiment of the present invention, in the above-mentioned image sensor, the slotted light shielding layer can be grounded or electrically connected to a bias voltage.
依照本發明的一實施例所述,在上述影像感測器中,更可包括浮置擴散區。浮置擴散區位在摻雜區的遠離感光元件的一側的基底中。According to an embodiment of the present invention, the above-mentioned image sensor may further include a floating diffusion region. The floating diffusion region is located in the substrate on the side of the doped region away from the photosensitive element.
依照本發明的一實施例所述,在上述影像感測器中,更可包括第三閘極。第三閘極設置在摻雜區與浮置擴散區之間的基底上。According to an embodiment of the present invention, the above-mentioned image sensor may further include a third gate electrode. The third gate is arranged on the substrate between the doped region and the floating diffusion region.
依照本發明的一實施例所述,在上述影像感測器中,第一閘極與基底可彼此絕緣。第二閘極與基底可彼此絕緣。第三閘極與基底可彼此絕緣。According to an embodiment of the present invention, in the above-mentioned image sensor, the first gate and the substrate can be insulated from each other. The second gate and the substrate may be insulated from each other. The third gate and the substrate may be insulated from each other.
依照本發明的一實施例所述,在上述影像感測器中,基底可具有第一導電型。摻雜區與浮置擴散區可具有第二導電型。According to an embodiment of the present invention, in the above-mentioned image sensor, the substrate may have the first conductivity type. The doped region and the floating diffusion region may have the second conductivity type.
依照本發明的一實施例所述,在上述影像感測器中,更可包括介電層與至少一個第一遮光層。介電層覆蓋開槽式遮光層。第一遮光層設置在介電層中,且連接於開槽式遮光層。According to an embodiment of the present invention, the above-mentioned image sensor may further include a dielectric layer and at least one first light shielding layer. The dielectric layer covers the slotted light shielding layer. The first light shielding layer is arranged in the dielectric layer and connected to the slotted light shielding layer.
依照本發明的一實施例所述,在上述影像感測器中,第一遮光層可環繞摻雜區。According to an embodiment of the present invention, in the above-mentioned image sensor, the first light shielding layer may surround the doped region.
依照本發明的一實施例所述,在上述影像感測器中,更可包括第二遮光層。第二遮光層設置在介電層上,且連接於第一遮光層。According to an embodiment of the present invention, the above-mentioned image sensor may further include a second light shielding layer. The second light shielding layer is arranged on the dielectric layer and connected to the first light shielding layer.
本發明提供一種影像感測器的製造方法,包括以下步驟。提供基底。在基底中形成感光元件。在感光元件的一側的基底中形成摻雜區。在摻雜區上方形成第一閘極。第一閘極具有凹槽。在感光元件與摻雜區之間的基底上形成第二閘極。在凹槽的表面上形成開槽式遮光層。開槽式遮光層位在摻雜區上方。The present invention provides a method for manufacturing an image sensor, including the following steps. Provide a base. A photosensitive element is formed in the substrate. A doped region is formed in the substrate on one side of the photosensitive element. A first gate is formed above the doped region. The first gate has a groove. A second gate is formed on the substrate between the photosensitive element and the doped region. A slotted light shielding layer is formed on the surface of the groove. The slotted light shielding layer is located above the doped region.
依照本發明的一實施例所述,在上述影像感測器的製造方法中,第一閘極的形成方法可包括以下步驟。在摻雜區上方形成閘極層。在閘極層上形成圖案化光阻層。圖案化光阻層暴露出部分閘極層。使用圖案化光阻層作為罩幕,移除部分閘極層。According to an embodiment of the present invention, in the method for manufacturing the image sensor, the method for forming the first gate electrode may include the following steps. A gate layer is formed above the doped region. A patterned photoresist layer is formed on the gate layer. The patterned photoresist layer exposes part of the gate layer. Use the patterned photoresist layer as a mask to remove part of the gate layer.
依照本發明的一實施例所述,在上述影像感測器的製造方法中,開槽式遮光層的形成方法例如是進行自對準金屬矽化物製程(self-aligned silicidation,salicidation)。According to an embodiment of the present invention, in the method for manufacturing the image sensor, the method for forming the slotted light shielding layer is, for example, a self-aligned silicidation (salicidation) process.
依照本發明的一實施例所述,在上述影像感測器的製造方法中,更可包括在摻雜區的遠離感光元件的一側的基底中形成浮置擴散區。According to an embodiment of the present invention, in the method for manufacturing the image sensor described above, it may further include forming a floating diffusion region in the substrate on the side of the doped region away from the photosensitive element.
依照本發明的一實施例所述,在上述影像感測器的製造方法中,更可包括在摻雜區與浮置擴散區之間的基底上形成第三閘極。According to an embodiment of the present invention, in the manufacturing method of the image sensor described above, it may further include forming a third gate electrode on the substrate between the doped region and the floating diffusion region.
依照本發明的一實施例所述,在上述影像感測器的製造方法中,更可包括以下步驟。形成覆蓋開槽式遮光層的介電層。在介電層中形成至少一個第一遮光層。第一遮光層連接於開槽式遮光層。According to an embodiment of the present invention, the manufacturing method of the image sensor may further include the following steps. A dielectric layer covering the slotted light shielding layer is formed. At least one first light shielding layer is formed in the dielectric layer. The first light shielding layer is connected to the slotted light shielding layer.
依照本發明的一實施例所述,在上述影像感測器的製造方法中,更可包括在介電層上形成第二遮光層。第二遮光層連接於第一遮光層。According to an embodiment of the present invention, in the manufacturing method of the image sensor described above, it may further include forming a second light shielding layer on the dielectric layer. The second light shielding layer is connected to the first light shielding layer.
基於上述,在上述影像感測器及其製造方法中,開槽式遮光層設置在第一閘極的凹槽的表面上,且位在摻雜區上方。如此一來,可藉由開槽式遮光層來防止雜散光照射到摻雜區,因此可有效地防止雜散光干擾,進而可提升全域快門效率。Based on the above, in the above-mentioned image sensor and the manufacturing method thereof, the slotted light shielding layer is disposed on the surface of the groove of the first gate electrode and is located above the doped region. In this way, the slotted light shielding layer can be used to prevent stray light from irradiating the doped area, so the interference of stray light can be effectively prevented, and the global shutter efficiency can be improved.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
圖1A至圖1G為本發明一實施例的影像感測器的製作流程剖面圖。圖2為圖1G的影像感測器中的部分構件的上視圖。1A to 1G are cross-sectional views of the manufacturing process of an image sensor according to an embodiment of the invention. 2 is a top view of some components in the image sensor of FIG. 1G.
請參照圖1A,提供基底100。基底100例如是半導體基底,如矽基底。基底100可具有第一導電型。以下,所記載的第一導電型與第二導電型可分別為P型導電型與N型導電型中的一者與另一者。在本實施例中,第一導電型是以P型導電型為例,且第二導電型是以N型導電型為例,但本發明並不以此為限。1A, a
在基底100中形成感光元件102。感光元件102可為光二極體。舉例來說,當感光元件102為光二極體時,感光元件102可包括第二導電型(如,N型)的摻雜區102a與第一導電型(如,P型)的基底100。感光元件102的形成方法例如是離子植入法。The
在基底100中可形成釘紮層(pinning layer)104。釘紮層104可位在感光元件102的表面。釘紮層104可用以降低暗電流。釘紮層104可為第一導電型(如,P型)的重摻雜區。釘紮層104的形成方法例如是離子植入法。A pinning
在感光元件102的一側的基底100中形成摻雜區106。摻雜區106可具有第二導電型(如,N型)。摻雜區106的形成方法例如是離子植入法。一般而言,儲存節點可由PN二極體電容所形成,且PN二極體電容為包含N型區與P型區的空乏區電容。此外,上述空乏區會涵蓋至少部份的N型區與P型區,且空乏區涵蓋N型區與P型區的範圍大小取決於N型區與P型區的濃度分佈。在本實施例中,摻雜區106可作為儲存節點的一部分。在一些實施例中,第二導電型的摻雜區106可與第一導電型的基底100形成儲存節點。A doped
在摻雜區106的遠離感光元件102的一側的基底100中可形成浮置擴散區108。浮置擴散區108可具有第二導電型(如,N型)。浮置擴散區108的形成方法例如是離子植入法。A floating
此外,所屬技術領域具有通常知識者可依據製程需求來決定感光元件102、釘紮層104、摻雜區106與浮置擴散區108的形成順序。In addition, those skilled in the art can determine the formation sequence of the
在摻雜區上方形成閘極層110。在感光元件102與摻雜區106之間的基底100上形成閘極112。閘極112可作為轉移閘極(transfer gate)使用。在摻雜區106與浮置擴散區108之間的基底100上可形成閘極114。閘極114可作為轉移閘極使用。閘極層110、閘極112與閘極114的材料例如是摻雜多晶矽。閘極層110、閘極112與閘極114的形成方法例如是組合使用沉積製程、微影製程與蝕刻製程。A
在閘極層110與基底100之間可形成介電層116。在閘極112與基底100之間可形成介電層118。在閘極114與基底100之間可形成介電層120。介電層116、介電層118與介電層120可用以作為閘介電層。介電層116、介電層118與介電層120的材料例如是氧化矽。介電層116、介電層118與介電層120的形成方法為所屬技術領域具有通常知識所周知,於此不再說明。A
在閘極層110的側壁上可形成間隙壁122。在閘極112的側壁上可形成間隙壁124。在閘極114的側壁上可形成間隙壁126。間隙壁122、間隙壁124與間隙壁126可為單層結構或多層結構。間隙壁122、間隙壁124與間隙壁126的材料例如是氧化矽、氮化矽或其組合。間隙壁122、間隙壁124與間隙壁126的形成方法例如是先在閘極層110、閘極112與閘極114上共形地形成間隙壁材料層,再對間隙壁材料層進行回蝕刻製程。A
請參照圖1B,可形成覆蓋閘極層110、閘極112與閘極114的介電層128。介電層128的材料例如是氧化矽。介電層128的形成方法例如是化學氣相沉積法。1B, a
接著,可在介電層128上形成介電層130。介電層130可用以作為接觸窗蝕刻終止層(contact etch stop layer,CESL)。介電層130的材料例如是氮化矽。介電層130的形成方法例如是化學氣相沉積法。Next, a
然後,可在介電層130上形成圖案化光阻層132。圖案化光阻層132可暴露出位於閘極層110上方的介電層130。圖案化光阻層132例如是藉由微影製程所形成。Then, a patterned
請參照圖1C,可使用圖案化光阻層132作為罩幕,移除部分介電層130與部分介電層128,而暴露出閘極層110。部分介電層130與部分介電層128可分別藉由乾式蝕刻法進行移除。1C, the patterned
請參照圖1D,移除圖案化光阻層132。圖案化光阻層132的移除方法例如是乾式去光阻法(dry stripping)(如,灰化法(ashing))或濕式去光阻法(wet stripping)。1D, the patterned
接著,在閘極層110上形成圖案化光阻層134。圖案化光阻層134暴露出部分閘極層110。圖案化光阻層134例如是藉由微影製程所形成。Next, a patterned
請參照圖1E,使用圖案化光阻層作為罩幕,移除部分閘極層110,而在摻雜區106上方形成閘極110a。閘極110a具有凹槽G。部分閘極層110的移除方法例如是乾式蝕刻法。在本實施例中,雖然閘極110a的形成方法是以上述方法為例來進行說明,但本發明並不以此為限。1E, using the patterned photoresist layer as a mask, part of the
請參照圖1F,移除圖案化光阻層134。圖案化光阻層134的移除方法例如是乾式去光阻法(如,灰化法)或濕式去光阻法。Referring to FIG. 1F, the patterned
接著,在凹槽G的表面上形成開槽式遮光層136。開槽式遮光層136位在摻雜區106上方。開槽式遮光層136可防止雜散光照射到摻雜區106,因此可有效地防止雜散光干擾,進而可提升全域快門效率。開槽式遮光層136更可形成在閘極110a的頂面上。開槽式遮光層136的開口136a可朝向遠離基底100的方向。開槽式遮光層136的材料例如是金屬矽化物,如矽化鈷(CoSi)。開槽式遮光層136的形成方法例如是進行自對準金屬矽化物製程。Next, a slotted
此外,開槽式遮光層136可接地或電連接至偏壓。在開槽式遮光層136接地的情況下,可提升儲存節點的電容,而使得儲存節點可以承接的光電子變多。因此,在布局(layout)設計上,可縮小儲存節點的面積,以降低受到雜散光干擾的機率,且可增大感光元件102的面積,以提升全域快門效率。在開槽式遮光層136電連接至偏壓的情況下,開槽式遮光層136可以作為儲存閘極(storage gate)使用。In addition, the slotted
接著,可形成覆蓋開槽式遮光層136的介電層138。介電層138的材料例如是氧化矽。介電層138的形成方法例如是化學氣相沉積法。Next, a
請參照圖1G,可在介電層138中形成至少一個遮光層140。遮光層140連接於開槽式遮光層136。遮光層140的材料例如是金屬,如鎢。接著,可在介電層138上形成遮光層142。遮光層142連接於遮光層140。開槽式遮光層136可藉由遮光層140與遮光層142進行接地或電連接至偏壓。遮光層142的材料例如是金屬,如鋁、鎢或銅。遮光層140與遮光層142可藉由內連線製程所形成。1G, at least one
請參照圖2,遮光層140可環繞摻雜區106。在此情況下,遮光層140的型態可為遮光牆。在本實施例中,遮光層140的數量是以一個為例來進行說明,但本發明並不以此為限。在其他實施例中,遮光層140的型態可為多個遮光柱(未示出)。Please refer to FIG. 2, the
在一些實施例中,更可在後續製程中形成如彩色濾光層(未示出)與微透鏡(未示出)等構件,上述構件為所屬技術領域具有通常知識者所周知,於此不再說明。In some embodiments, components such as a color filter layer (not shown) and microlenses (not shown) can be formed in a subsequent process. The above components are well known by those with ordinary knowledge in the art, and are not here. Let me explain.
以下,藉由圖1G來說明本實施例的影像感測器10。此外,雖然影像感測器10的形成方法是以上述方法為例進行說明,但本發明並不以此為限。Hereinafter, the
請參照圖1G,影像感測器10包括基底100、感光元件102、摻雜區106、閘極110a、開槽式遮光層136與閘極112。感光元件102位在基底100中。摻雜區106位在感光元件102的一側的基底100中。閘極110a設置在摻雜區106上方。閘極110a具有凹槽G。開槽式遮光層136設置在凹槽G的表面上,且位在摻雜區106上方。開槽式遮光層136更可設置在閘極110a的頂面上。閘極112設置在感光元件102與摻雜區106之間的基底100上。1G, the
此外,影像感測器10更可包括浮置擴散區108、閘極114、介電層116、介電層118、介電層120、間隙壁122、間隙壁124、間隙壁126、介電層128、介電層130、介電層138、遮光層140與遮光層142中的至少一者。浮置擴散區108位在摻雜區106的遠離感光元件102的一側的基底100中。閘極114設置在摻雜區106與浮置擴散區108之間的基底100上。介電層116位在閘極110a與基底100之間,藉此閘極110a與基底100可彼此絕緣。介電層118位在閘極112與基底100之間,藉此閘極112與基底100可彼此絕緣。介電層120位在閘極114與基底100之間,藉此閘極114與基底100可彼此絕緣。間隙壁122設置在閘極110a的側壁上。間隙壁124設置在閘極112的側壁上。間隙壁126設置在閘極114的側壁上。介電層128覆蓋閘極112與閘極114。介電層130設置在介電層128上。介電層138覆蓋開槽式遮光層136。遮光層140設置在介電層138中,且連接於開槽式遮光層136。遮光層142設置在介電層138上,且連接於遮光層140。In addition, the
此外,影像感測器10中的各構件的材料、設置方式、導電型態、形成方法與功效等已於上述實施例進行詳盡地說明,於此不再說明。In addition, the materials, arrangement methods, conductive types, formation methods and effects of the components in the
基於上述實施例可知,在影像感測器10及其製造方法中,開槽式遮光層136設置在閘極100a的凹槽G的表面上,且位在摻雜區106上方。如此一來,可藉由開槽式遮光層136來防止雜散光照射到摻雜區106,因此可有效地防止雜散光干擾,進而可提升全域快門效率。Based on the above-mentioned embodiment, in the
綜上所述,在上述實施例的影像感測器及其製造方法中,藉由開槽式遮光層可有效地防止雜散光干擾,進而可提升全域快門效率。In summary, in the image sensor and the manufacturing method thereof in the above embodiments, the slotted light-shielding layer can effectively prevent the interference of stray light, thereby improving the global shutter efficiency.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.
10:影像感測器
100:基底
102:感光元件
102a、106:摻雜區
104:釘紮層
108:浮置擴散區
110:閘極層
110a、112、114:閘極
116、118、120、128、130、138:介電層
122、124、126:間隙壁
132、134:圖案化光阻層
136:開槽式遮光層
136a:開口
140、142:遮光層
G:凹槽10: Image sensor
100: base
102:
圖1A至圖1G為本發明一實施例的影像感測器的製作流程剖面圖。 圖2為圖1G的影像感測器中的部分構件的上視圖。 1A to 1G are cross-sectional views of the manufacturing process of an image sensor according to an embodiment of the invention. 2 is a top view of some components in the image sensor of FIG. 1G.
10:影像感測器 10: Image sensor
100:基底 100: base
102:感光元件 102: photosensitive element
102a、106:摻雜區 102a, 106: doped area
104:釘紮層 104: pinned layer
108:浮置擴散區 108: Floating diffusion area
110a、112、114:閘極 110a, 112, 114: gate
116、118、120、128、130、138:介電層 116, 118, 120, 128, 130, 138: Dielectric layer
122、124、126:間隙壁 122, 124, 126: gap wall
136:開槽式遮光層 136: Slotted shading layer
136a:開口 136a: opening
140、142:遮光層 140, 142: shading layer
G:凹槽 G: Groove
Claims (20)
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Citations (4)
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WO2009073866A1 (en) * | 2007-12-07 | 2009-06-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Gate after diamond transistor |
TW201203489A (en) * | 2010-04-27 | 2012-01-16 | On Semiconductor Trading Ltd | Semiconductor device and method of manufacturing same |
CN102800684A (en) * | 2011-05-27 | 2012-11-28 | 佳能株式会社 | Solid-state image pickup device, image pickup system, and method of manufacturing solid-state image pickup device |
US20180286905A1 (en) * | 2017-03-30 | 2018-10-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Front side illuminated image sensor device structure and method for forming the same |
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WO2009073866A1 (en) * | 2007-12-07 | 2009-06-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Gate after diamond transistor |
TW201203489A (en) * | 2010-04-27 | 2012-01-16 | On Semiconductor Trading Ltd | Semiconductor device and method of manufacturing same |
CN102800684A (en) * | 2011-05-27 | 2012-11-28 | 佳能株式会社 | Solid-state image pickup device, image pickup system, and method of manufacturing solid-state image pickup device |
US20180286905A1 (en) * | 2017-03-30 | 2018-10-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Front side illuminated image sensor device structure and method for forming the same |
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