TWI701842B - Image sensor and manufacturing method thereof - Google Patents

Image sensor and manufacturing method thereof Download PDF

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TWI701842B
TWI701842B TW108127753A TW108127753A TWI701842B TW I701842 B TWI701842 B TW I701842B TW 108127753 A TW108127753 A TW 108127753A TW 108127753 A TW108127753 A TW 108127753A TW I701842 B TWI701842 B TW I701842B
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light shielding
image sensor
shielding layer
gate
layer
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TW108127753A
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TW202107725A (en
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吳建龍
林文毅
黃文澔
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力晶積成電子製造股份有限公司
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Abstract

An image sensor includes a substrate, light sensing device, a doped region, a first gate, a grooving-type light shielding layer, and a second gate is provided. The light sensing device is located in the substrate. The doped region is located in the substrate on one side of the light sensing device. The first gate is disposed above the doped region. The first gate has a groove. The grooving-type light shielding layer is disposed on the surface of the groove and located above the doped region. The second gate is disposed on the substrate between the light sensing device and the doped region.

Description

影像感測器及其製造方法Image sensor and manufacturing method thereof

本發明是有關於一種半導體元件及其製造方法，且特別是有關於一種影像感測器及其製造方法。The present invention relates to a semiconductor device and its manufacturing method, and more particularly to an image sensor and its manufacturing method.

目前有些種類的影像感測器(如，全域快門影像感測器(global shutter image sensor))具有位在基底中且用以儲存訊號的儲存節點(storage node)。然而，雜散光(stray light)會對儲存在儲存節點中的訊號造成干擾，而造成全域快門效率(global shutter efficiency，GSE)不佳。因此，如何有效地防止雜散光干擾為目前持續研究發展的目標。At present, some types of image sensors (eg, global shutter image sensors) have storage nodes located in the substrate and used to store signals. However, stray light (stray light) interferes with the signal stored in the storage node, resulting in poor global shutter efficiency (GSE). Therefore, how to effectively prevent stray light interference is the goal of continuous research and development.

本發明提供一種影像感測器及其製造方法，其可有效地防止雜散光干擾。The invention provides an image sensor and a manufacturing method thereof, which can effectively prevent the interference of stray light.

本發明提出一種影像感測器，包括基底、感光元件、摻雜區、第一閘極、開槽式遮光層與第二閘極。感光元件位在基底中。摻雜區位在感光元件的一側的基底中。第一閘極設置在摻雜區上方。第一閘極具有凹槽。開槽式遮光層設置在凹槽的表面上，且位在摻雜區上方。第二閘極設置在感光元件與摻雜區之間的基底上。The present invention provides an image sensor, which includes a substrate, a photosensitive element, a doped region, a first gate, a slotted light shielding layer and a second gate. The photosensitive element is located in the substrate. The doped area is located in the substrate on one side of the photosensitive element. The first gate is arranged above the doped region. The first gate has a groove. The slotted light shielding layer is arranged on the surface of the groove and is located above the doped area. The second gate is arranged on the substrate between the photosensitive element and the doped region.

依照本發明的一實施例所述，在上述影像感測器中，感光元件例如是光二極體。According to an embodiment of the present invention, in the above-mentioned image sensor, the photosensitive element is, for example, a photodiode.

依照本發明的一實施例所述，在上述影像感測器中，開槽式遮光層的材料例如是金屬矽化物。According to an embodiment of the present invention, in the above-mentioned image sensor, the material of the slotted light shielding layer is, for example, metal silicide.

依照本發明的一實施例所述，在上述影像感測器中，開槽式遮光層更可設置在第一閘極的頂面上。According to an embodiment of the present invention, in the above-mentioned image sensor, the slotted light-shielding layer may be further disposed on the top surface of the first gate electrode.

依照本發明的一實施例所述，在上述影像感測器中，開槽式遮光層的開口可朝向遠離基底的方向。According to an embodiment of the present invention, in the above-mentioned image sensor, the opening of the slotted light shielding layer can face away from the substrate.

依照本發明的一實施例所述，在上述影像感測器中，開槽式遮光層可接地或電連接至偏壓。According to an embodiment of the present invention, in the above-mentioned image sensor, the slotted light shielding layer can be grounded or electrically connected to a bias voltage.

依照本發明的一實施例所述，在上述影像感測器中，更可包括浮置擴散區。浮置擴散區位在摻雜區的遠離感光元件的一側的基底中。According to an embodiment of the present invention, the above-mentioned image sensor may further include a floating diffusion region. The floating diffusion region is located in the substrate on the side of the doped region away from the photosensitive element.

依照本發明的一實施例所述，在上述影像感測器中，更可包括第三閘極。第三閘極設置在摻雜區與浮置擴散區之間的基底上。According to an embodiment of the present invention, the above-mentioned image sensor may further include a third gate electrode. The third gate is arranged on the substrate between the doped region and the floating diffusion region.

依照本發明的一實施例所述，在上述影像感測器中，第一閘極與基底可彼此絕緣。第二閘極與基底可彼此絕緣。第三閘極與基底可彼此絕緣。According to an embodiment of the present invention, in the above-mentioned image sensor, the first gate and the substrate can be insulated from each other. The second gate and the substrate may be insulated from each other. The third gate and the substrate may be insulated from each other.

依照本發明的一實施例所述，在上述影像感測器中，基底可具有第一導電型。摻雜區與浮置擴散區可具有第二導電型。According to an embodiment of the present invention, in the above-mentioned image sensor, the substrate may have the first conductivity type. The doped region and the floating diffusion region may have the second conductivity type.

依照本發明的一實施例所述，在上述影像感測器中，更可包括介電層與至少一個第一遮光層。介電層覆蓋開槽式遮光層。第一遮光層設置在介電層中，且連接於開槽式遮光層。According to an embodiment of the present invention, the above-mentioned image sensor may further include a dielectric layer and at least one first light shielding layer. The dielectric layer covers the slotted light shielding layer. The first light shielding layer is arranged in the dielectric layer and connected to the slotted light shielding layer.

依照本發明的一實施例所述，在上述影像感測器中，第一遮光層可環繞摻雜區。According to an embodiment of the present invention, in the above-mentioned image sensor, the first light shielding layer may surround the doped region.

依照本發明的一實施例所述，在上述影像感測器中，更可包括第二遮光層。第二遮光層設置在介電層上，且連接於第一遮光層。According to an embodiment of the present invention, the above-mentioned image sensor may further include a second light shielding layer. The second light shielding layer is arranged on the dielectric layer and connected to the first light shielding layer.

本發明提供一種影像感測器的製造方法，包括以下步驟。提供基底。在基底中形成感光元件。在感光元件的一側的基底中形成摻雜區。在摻雜區上方形成第一閘極。第一閘極具有凹槽。在感光元件與摻雜區之間的基底上形成第二閘極。在凹槽的表面上形成開槽式遮光層。開槽式遮光層位在摻雜區上方。The present invention provides a method for manufacturing an image sensor, including the following steps. Provide a base. A photosensitive element is formed in the substrate. A doped region is formed in the substrate on one side of the photosensitive element. A first gate is formed above the doped region. The first gate has a groove. A second gate is formed on the substrate between the photosensitive element and the doped region. A slotted light shielding layer is formed on the surface of the groove. The slotted light shielding layer is located above the doped region.

依照本發明的一實施例所述，在上述影像感測器的製造方法中，第一閘極的形成方法可包括以下步驟。在摻雜區上方形成閘極層。在閘極層上形成圖案化光阻層。圖案化光阻層暴露出部分閘極層。使用圖案化光阻層作為罩幕，移除部分閘極層。According to an embodiment of the present invention, in the method for manufacturing the image sensor, the method for forming the first gate electrode may include the following steps. A gate layer is formed above the doped region. A patterned photoresist layer is formed on the gate layer. The patterned photoresist layer exposes part of the gate layer. Use the patterned photoresist layer as a mask to remove part of the gate layer.

依照本發明的一實施例所述，在上述影像感測器的製造方法中，開槽式遮光層的形成方法例如是進行自對準金屬矽化物製程(self-aligned silicidation，salicidation)。According to an embodiment of the present invention, in the method for manufacturing the image sensor, the method for forming the slotted light shielding layer is, for example, a self-aligned silicidation (salicidation) process.

依照本發明的一實施例所述，在上述影像感測器的製造方法中，更可包括在摻雜區的遠離感光元件的一側的基底中形成浮置擴散區。According to an embodiment of the present invention, in the method for manufacturing the image sensor described above, it may further include forming a floating diffusion region in the substrate on the side of the doped region away from the photosensitive element.

依照本發明的一實施例所述，在上述影像感測器的製造方法中，更可包括在摻雜區與浮置擴散區之間的基底上形成第三閘極。According to an embodiment of the present invention, in the manufacturing method of the image sensor described above, it may further include forming a third gate electrode on the substrate between the doped region and the floating diffusion region.

依照本發明的一實施例所述，在上述影像感測器的製造方法中，更可包括以下步驟。形成覆蓋開槽式遮光層的介電層。在介電層中形成至少一個第一遮光層。第一遮光層連接於開槽式遮光層。According to an embodiment of the present invention, the manufacturing method of the image sensor may further include the following steps. A dielectric layer covering the slotted light shielding layer is formed. At least one first light shielding layer is formed in the dielectric layer. The first light shielding layer is connected to the slotted light shielding layer.

依照本發明的一實施例所述，在上述影像感測器的製造方法中，更可包括在介電層上形成第二遮光層。第二遮光層連接於第一遮光層。According to an embodiment of the present invention, in the manufacturing method of the image sensor described above, it may further include forming a second light shielding layer on the dielectric layer. The second light shielding layer is connected to the first light shielding layer.

基於上述，在上述影像感測器及其製造方法中，開槽式遮光層設置在第一閘極的凹槽的表面上，且位在摻雜區上方。如此一來，可藉由開槽式遮光層來防止雜散光照射到摻雜區，因此可有效地防止雜散光干擾，進而可提升全域快門效率。Based on the above, in the above-mentioned image sensor and the manufacturing method thereof, the slotted light shielding layer is disposed on the surface of the groove of the first gate electrode and is located above the doped region. In this way, the slotted light shielding layer can be used to prevent stray light from irradiating the doped area, so the interference of stray light can be effectively prevented, and the global shutter efficiency can be improved.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

圖1A至圖1G為本發明一實施例的影像感測器的製作流程剖面圖。圖2為圖1G的影像感測器中的部分構件的上視圖。1A to 1G are cross-sectional views of the manufacturing process of an image sensor according to an embodiment of the invention. 2 is a top view of some components in the image sensor of FIG. 1G.

請參照圖1A，提供基底100。基底100例如是半導體基底，如矽基底。基底100可具有第一導電型。以下，所記載的第一導電型與第二導電型可分別為P型導電型與N型導電型中的一者與另一者。在本實施例中，第一導電型是以P型導電型為例，且第二導電型是以N型導電型為例，但本發明並不以此為限。1A, a substrate 100 is provided. The substrate 100 is, for example, a semiconductor substrate, such as a silicon substrate. The substrate 100 may have a first conductivity type. Hereinafter, the first conductivity type and the second conductivity type described may be one and the other of the P-type conductivity type and the N-type conductivity type, respectively. In this embodiment, the first conductivity type is an example of a P-type conductivity, and the second conductivity type is an example of an N-type conductivity, but the invention is not limited to this.

在基底100中形成感光元件102。感光元件102可為光二極體。舉例來說，當感光元件102為光二極體時，感光元件102可包括第二導電型(如，N型)的摻雜區102a與第一導電型(如，P型)的基底100。感光元件102的形成方法例如是離子植入法。The photosensitive element 102 is formed in the substrate 100. The photosensitive element 102 may be an optical diode. For example, when the photosensitive element 102 is a photodiode, the photosensitive element 102 may include a doped region 102a of the second conductivity type (eg, N-type) and a substrate 100 of the first conductivity type (eg, P-type). The formation method of the photosensitive element 102 is, for example, an ion implantation method.

在基底100中可形成釘紮層(pinning layer)104。釘紮層104可位在感光元件102的表面。釘紮層104可用以降低暗電流。釘紮層104可為第一導電型(如，P型)的重摻雜區。釘紮層104的形成方法例如是離子植入法。A pinning layer 104 may be formed in the substrate 100. The pinning layer 104 may be located on the surface of the photosensitive element 102. The pinned layer 104 can be used to reduce dark current. The pinning layer 104 may be a heavily doped region of the first conductivity type (eg, P type). The method of forming the pinning layer 104 is, for example, an ion implantation method.

在感光元件102的一側的基底100中形成摻雜區106。摻雜區106可具有第二導電型(如，N型)。摻雜區106的形成方法例如是離子植入法。一般而言，儲存節點可由PN二極體電容所形成，且PN二極體電容為包含N型區與P型區的空乏區電容。此外，上述空乏區會涵蓋至少部份的N型區與P型區，且空乏區涵蓋N型區與P型區的範圍大小取決於N型區與P型區的濃度分佈。在本實施例中，摻雜區106可作為儲存節點的一部分。在一些實施例中，第二導電型的摻雜區106可與第一導電型的基底100形成儲存節點。A doped region 106 is formed in the substrate 100 on one side of the photosensitive element 102. The doped region 106 may have a second conductivity type (eg, N type). The formation method of the doped region 106 is, for example, an ion implantation method. Generally speaking, the storage node can be formed by a PN diode capacitor, and the PN diode capacitor is a depletion region capacitor including an N-type region and a P-type region. In addition, the aforementioned depletion region will cover at least part of the N-type region and the P-type region, and the extent of the depletion region covering the N-type region and the P-type region depends on the concentration distribution of the N-type region and the P-type region. In this embodiment, the doped region 106 can be used as a part of the storage node. In some embodiments, the doped region 106 of the second conductivity type may form a storage node with the substrate 100 of the first conductivity type.

在摻雜區106的遠離感光元件102的一側的基底100中可形成浮置擴散區108。浮置擴散區108可具有第二導電型(如，N型)。浮置擴散區108的形成方法例如是離子植入法。A floating diffusion region 108 may be formed in the substrate 100 on the side of the doped region 106 away from the photosensitive element 102. The floating diffusion region 108 may have a second conductivity type (eg, N type). The method of forming the floating diffusion region 108 is, for example, an ion implantation method.

此外，所屬技術領域具有通常知識者可依據製程需求來決定感光元件102、釘紮層104、摻雜區106與浮置擴散區108的形成順序。In addition, those skilled in the art can determine the formation sequence of the photosensitive element 102, the pinned layer 104, the doped region 106, and the floating diffusion region 108 according to the process requirements.

在摻雜區上方形成閘極層110。在感光元件102與摻雜區106之間的基底100上形成閘極112。閘極112可作為轉移閘極(transfer gate)使用。在摻雜區106與浮置擴散區108之間的基底100上可形成閘極114。閘極114可作為轉移閘極使用。閘極層110、閘極112與閘極114的材料例如是摻雜多晶矽。閘極層110、閘極112與閘極114的形成方法例如是組合使用沉積製程、微影製程與蝕刻製程。A gate layer 110 is formed above the doped region. A gate 112 is formed on the substrate 100 between the photosensitive element 102 and the doped region 106. The gate 112 can be used as a transfer gate. A gate 114 may be formed on the substrate 100 between the doped region 106 and the floating diffusion region 108. The gate 114 can be used as a transfer gate. The material of the gate layer 110, the gate 112 and the gate 114 is, for example, doped polysilicon. The method for forming the gate layer 110, the gate 112, and the gate 114 is, for example, a combination of a deposition process, a lithography process, and an etching process.

在閘極層110與基底100之間可形成介電層116。在閘極112與基底100之間可形成介電層118。在閘極114與基底100之間可形成介電層120。介電層116、介電層118與介電層120可用以作為閘介電層。介電層116、介電層118與介電層120的材料例如是氧化矽。介電層116、介電層118與介電層120的形成方法為所屬技術領域具有通常知識所周知，於此不再說明。A dielectric layer 116 may be formed between the gate layer 110 and the substrate 100. A dielectric layer 118 may be formed between the gate 112 and the substrate 100. A dielectric layer 120 may be formed between the gate 114 and the substrate 100. The dielectric layer 116, the dielectric layer 118, and the dielectric layer 120 can be used as gate dielectric layers. The material of the dielectric layer 116, the dielectric layer 118, and the dielectric layer 120 is, for example, silicon oxide. The formation methods of the dielectric layer 116, the dielectric layer 118, and the dielectric layer 120 are well-known in the art and will not be described here.

在閘極層110的側壁上可形成間隙壁122。在閘極112的側壁上可形成間隙壁124。在閘極114的側壁上可形成間隙壁126。間隙壁122、間隙壁124與間隙壁126可為單層結構或多層結構。間隙壁122、間隙壁124與間隙壁126的材料例如是氧化矽、氮化矽或其組合。間隙壁122、間隙壁124與間隙壁126的形成方法例如是先在閘極層110、閘極112與閘極114上共形地形成間隙壁材料層，再對間隙壁材料層進行回蝕刻製程。A spacer 122 may be formed on the sidewall of the gate layer 110. A spacer 124 may be formed on the sidewall of the gate 112. A spacer 126 may be formed on the side wall of the gate 114. The spacer 122, the spacer 124, and the spacer 126 may have a single-layer structure or a multilayer structure. The materials of the spacer 122, the spacer 124, and the spacer 126 are, for example, silicon oxide, silicon nitride, or a combination thereof. The method for forming the spacer 122, the spacer 124, and the spacer 126 is, for example, first forming a spacer material layer conformally on the gate layer 110, the gate 112, and the gate 114, and then performing an etching back process on the spacer material layer. .

請參照圖1B，可形成覆蓋閘極層110、閘極112與閘極114的介電層128。介電層128的材料例如是氧化矽。介電層128的形成方法例如是化學氣相沉積法。1B, a dielectric layer 128 covering the gate layer 110, the gate 112, and the gate 114 can be formed. The material of the dielectric layer 128 is silicon oxide, for example. The formation method of the dielectric layer 128 is, for example, a chemical vapor deposition method.

接著，可在介電層128上形成介電層130。介電層130可用以作為接觸窗蝕刻終止層(contact etch stop layer，CESL)。介電層130的材料例如是氮化矽。介電層130的形成方法例如是化學氣相沉積法。Next, a dielectric layer 130 may be formed on the dielectric layer 128. The dielectric layer 130 can be used as a contact etch stop layer (CESL). The material of the dielectric layer 130 is silicon nitride, for example. The formation method of the dielectric layer 130 is, for example, a chemical vapor deposition method.

然後，可在介電層130上形成圖案化光阻層132。圖案化光阻層132可暴露出位於閘極層110上方的介電層130。圖案化光阻層132例如是藉由微影製程所形成。Then, a patterned photoresist layer 132 may be formed on the dielectric layer 130. The patterned photoresist layer 132 may expose the dielectric layer 130 above the gate layer 110. The patterned photoresist layer 132 is formed by, for example, a photolithography process.

請參照圖1C，可使用圖案化光阻層132作為罩幕，移除部分介電層130與部分介電層128，而暴露出閘極層110。部分介電層130與部分介電層128可分別藉由乾式蝕刻法進行移除。1C, the patterned photoresist layer 132 can be used as a mask, and a part of the dielectric layer 130 and a part of the dielectric layer 128 are removed, and the gate layer 110 is exposed. Part of the dielectric layer 130 and part of the dielectric layer 128 can be removed by dry etching respectively.

請參照圖1D，移除圖案化光阻層132。圖案化光阻層132的移除方法例如是乾式去光阻法(dry stripping)(如，灰化法(ashing))或濕式去光阻法(wet stripping)。1D, the patterned photoresist layer 132 is removed. The removal method of the patterned photoresist layer 132 is, for example, dry stripping (eg, ashing) or wet stripping.

接著，在閘極層110上形成圖案化光阻層134。圖案化光阻層134暴露出部分閘極層110。圖案化光阻層134例如是藉由微影製程所形成。Next, a patterned photoresist layer 134 is formed on the gate layer 110. The patterned photoresist layer 134 exposes part of the gate layer 110. The patterned photoresist layer 134 is formed by, for example, a photolithography process.

請參照圖1E，使用圖案化光阻層作為罩幕，移除部分閘極層110，而在摻雜區106上方形成閘極110a。閘極110a具有凹槽G。部分閘極層110的移除方法例如是乾式蝕刻法。在本實施例中，雖然閘極110a的形成方法是以上述方法為例來進行說明，但本發明並不以此為限。1E, using the patterned photoresist layer as a mask, part of the gate layer 110 is removed, and a gate 110a is formed above the doped region 106. The gate 110a has a groove G. The method for removing part of the gate layer 110 is, for example, a dry etching method. In this embodiment, although the method for forming the gate 110a is described using the above method as an example, the present invention is not limited to this.

請參照圖1F，移除圖案化光阻層134。圖案化光阻層134的移除方法例如是乾式去光阻法(如，灰化法)或濕式去光阻法。Referring to FIG. 1F, the patterned photoresist layer 134 is removed. The method for removing the patterned photoresist layer 134 is, for example, a dry photoresist removal method (for example, an ashing method) or a wet photoresist removal method.

接著，在凹槽G的表面上形成開槽式遮光層136。開槽式遮光層136位在摻雜區106上方。開槽式遮光層136可防止雜散光照射到摻雜區106，因此可有效地防止雜散光干擾，進而可提升全域快門效率。開槽式遮光層136更可形成在閘極110a的頂面上。開槽式遮光層136的開口136a可朝向遠離基底100的方向。開槽式遮光層136的材料例如是金屬矽化物，如矽化鈷(CoSi)。開槽式遮光層136的形成方法例如是進行自對準金屬矽化物製程。Next, a slotted light shielding layer 136 is formed on the surface of the groove G. The slotted light shielding layer 136 is located above the doped region 106. The slotted light shielding layer 136 can prevent stray light from irradiating the doped region 106, and therefore can effectively prevent the interference of stray light, thereby improving the global shutter efficiency. The slotted light shielding layer 136 may further be formed on the top surface of the gate 110a. The opening 136 a of the slotted light shielding layer 136 may face away from the substrate 100. The material of the slotted light shielding layer 136 is, for example, metal silicide, such as cobalt silicide (CoSi). The method for forming the slotted light shielding layer 136 is, for example, a self-aligned metal silicide process.

此外，開槽式遮光層136可接地或電連接至偏壓。在開槽式遮光層136接地的情況下，可提升儲存節點的電容，而使得儲存節點可以承接的光電子變多。因此，在布局(layout)設計上，可縮小儲存節點的面積，以降低受到雜散光干擾的機率，且可增大感光元件102的面積，以提升全域快門效率。在開槽式遮光層136電連接至偏壓的情況下，開槽式遮光層136可以作為儲存閘極(storage gate)使用。In addition, the slotted light shielding layer 136 may be grounded or electrically connected to a bias voltage. When the slotted light shielding layer 136 is grounded, the capacitance of the storage node can be increased, so that the storage node can receive more photoelectrons. Therefore, in layout design, the area of the storage node can be reduced to reduce the probability of being interfered by stray light, and the area of the photosensitive element 102 can be increased to improve the global shutter efficiency. In the case where the slotted light shielding layer 136 is electrically connected to a bias voltage, the slotted light shielding layer 136 may be used as a storage gate.

接著，可形成覆蓋開槽式遮光層136的介電層138。介電層138的材料例如是氧化矽。介電層138的形成方法例如是化學氣相沉積法。Next, a dielectric layer 138 covering the slotted light shielding layer 136 may be formed. The material of the dielectric layer 138 is silicon oxide, for example. The formation method of the dielectric layer 138 is, for example, a chemical vapor deposition method.

請參照圖1G，可在介電層138中形成至少一個遮光層140。遮光層140連接於開槽式遮光層136。遮光層140的材料例如是金屬，如鎢。接著，可在介電層138上形成遮光層142。遮光層142連接於遮光層140。開槽式遮光層136可藉由遮光層140與遮光層142進行接地或電連接至偏壓。遮光層142的材料例如是金屬，如鋁、鎢或銅。遮光層140與遮光層142可藉由內連線製程所形成。1G, at least one light shielding layer 140 may be formed in the dielectric layer 138. The light shielding layer 140 is connected to the slotted light shielding layer 136. The material of the light shielding layer 140 is, for example, metal, such as tungsten. Next, a light shielding layer 142 can be formed on the dielectric layer 138. The light shielding layer 142 is connected to the light shielding layer 140. The slotted light shielding layer 136 can be grounded or electrically connected to a bias voltage through the light shielding layer 140 and the light shielding layer 142. The material of the light shielding layer 142 is, for example, a metal, such as aluminum, tungsten, or copper. The light-shielding layer 140 and the light-shielding layer 142 can be formed by an interconnection process.

請參照圖2，遮光層140可環繞摻雜區106。在此情況下，遮光層140的型態可為遮光牆。在本實施例中，遮光層140的數量是以一個為例來進行說明，但本發明並不以此為限。在其他實施例中，遮光層140的型態可為多個遮光柱(未示出)。Please refer to FIG. 2, the light shielding layer 140 can surround the doped region 106. In this case, the light shielding layer 140 may be a light shielding wall. In this embodiment, the number of the light shielding layer 140 is described by taking one as an example, but the present invention is not limited to this. In other embodiments, the shape of the light shielding layer 140 may be a plurality of light shielding rods (not shown).

在一些實施例中，更可在後續製程中形成如彩色濾光層(未示出)與微透鏡(未示出)等構件，上述構件為所屬技術領域具有通常知識者所周知，於此不再說明。In some embodiments, components such as a color filter layer (not shown) and microlenses (not shown) can be formed in a subsequent process. The above components are well known by those with ordinary knowledge in the art, and are not here. Let me explain.

以下，藉由圖1G來說明本實施例的影像感測器10。此外，雖然影像感測器10的形成方法是以上述方法為例進行說明，但本發明並不以此為限。Hereinafter, the image sensor 10 of this embodiment will be described with reference to FIG. 1G. In addition, although the method for forming the image sensor 10 is described using the above method as an example, the present invention is not limited to this.

請參照圖1G，影像感測器10包括基底100、感光元件102、摻雜區106、閘極110a、開槽式遮光層136與閘極112。感光元件102位在基底100中。摻雜區106位在感光元件102的一側的基底100中。閘極110a設置在摻雜區106上方。閘極110a具有凹槽G。開槽式遮光層136設置在凹槽G的表面上，且位在摻雜區106上方。開槽式遮光層136更可設置在閘極110a的頂面上。閘極112設置在感光元件102與摻雜區106之間的基底100上。1G, the image sensor 10 includes a substrate 100, a photosensitive element 102, a doped region 106, a gate 110a, a slotted light shielding layer 136, and a gate 112. The photosensitive element 102 is located in the substrate 100. The doped region 106 is located in the substrate 100 on one side of the photosensitive element 102. The gate 110 a is disposed above the doped region 106. The gate 110a has a groove G. The slotted light shielding layer 136 is disposed on the surface of the groove G and above the doped region 106. The slotted light-shielding layer 136 can be further disposed on the top surface of the gate 110a. The gate 112 is disposed on the substrate 100 between the photosensitive element 102 and the doped region 106.

此外，影像感測器10更可包括浮置擴散區108、閘極114、介電層116、介電層118、介電層120、間隙壁122、間隙壁124、間隙壁126、介電層128、介電層130、介電層138、遮光層140與遮光層142中的至少一者。浮置擴散區108位在摻雜區106的遠離感光元件102的一側的基底100中。閘極114設置在摻雜區106與浮置擴散區108之間的基底100上。介電層116位在閘極110a與基底100之間，藉此閘極110a與基底100可彼此絕緣。介電層118位在閘極112與基底100之間，藉此閘極112與基底100可彼此絕緣。介電層120位在閘極114與基底100之間，藉此閘極114與基底100可彼此絕緣。間隙壁122設置在閘極110a的側壁上。間隙壁124設置在閘極112的側壁上。間隙壁126設置在閘極114的側壁上。介電層128覆蓋閘極112與閘極114。介電層130設置在介電層128上。介電層138覆蓋開槽式遮光層136。遮光層140設置在介電層138中，且連接於開槽式遮光層136。遮光層142設置在介電層138上，且連接於遮光層140。In addition, the image sensor 10 may further include a floating diffusion region 108, a gate 114, a dielectric layer 116, a dielectric layer 118, a dielectric layer 120, a spacer 122, a spacer 124, a spacer 126, a dielectric layer 128. At least one of the dielectric layer 130, the dielectric layer 138, the light shielding layer 140, and the light shielding layer 142. The floating diffusion region 108 is located in the substrate 100 on the side of the doped region 106 away from the photosensitive element 102. The gate 114 is disposed on the substrate 100 between the doped region 106 and the floating diffusion region 108. The dielectric layer 116 is located between the gate 110a and the substrate 100, so that the gate 110a and the substrate 100 can be insulated from each other. The dielectric layer 118 is located between the gate 112 and the substrate 100, so that the gate 112 and the substrate 100 can be insulated from each other. The dielectric layer 120 is located between the gate 114 and the substrate 100, so that the gate 114 and the substrate 100 can be insulated from each other. The spacer 122 is provided on the side wall of the gate 110a. The spacer 124 is provided on the side wall of the gate 112. The spacer 126 is provided on the side wall of the gate 114. The dielectric layer 128 covers the gate 112 and the gate 114. The dielectric layer 130 is disposed on the dielectric layer 128. The dielectric layer 138 covers the slotted light shielding layer 136. The light shielding layer 140 is disposed in the dielectric layer 138 and connected to the slotted light shielding layer 136. The light shielding layer 142 is disposed on the dielectric layer 138 and connected to the light shielding layer 140.

此外，影像感測器10中的各構件的材料、設置方式、導電型態、形成方法與功效等已於上述實施例進行詳盡地說明，於此不再說明。In addition, the materials, arrangement methods, conductive types, formation methods and effects of the components in the image sensor 10 have been described in detail in the above-mentioned embodiments, and will not be described here.

基於上述實施例可知，在影像感測器10及其製造方法中，開槽式遮光層136設置在閘極100a的凹槽G的表面上，且位在摻雜區106上方。如此一來，可藉由開槽式遮光層136來防止雜散光照射到摻雜區106，因此可有效地防止雜散光干擾，進而可提升全域快門效率。Based on the above-mentioned embodiment, in the image sensor 10 and the manufacturing method thereof, the slotted light shielding layer 136 is disposed on the surface of the groove G of the gate 100a and is located above the doped region 106. In this way, the slotted light shielding layer 136 can be used to prevent stray light from irradiating the doped region 106, so the interference of stray light can be effectively prevented, and the global shutter efficiency can be improved.

綜上所述，在上述實施例的影像感測器及其製造方法中，藉由開槽式遮光層可有效地防止雜散光干擾，進而可提升全域快門效率。In summary, in the image sensor and the manufacturing method thereof in the above embodiments, the slotted light-shielding layer can effectively prevent the interference of stray light, thereby improving the global shutter efficiency.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

10:影像感測器 100:基底 102:感光元件 102a、106:摻雜區 104:釘紮層 108:浮置擴散區 110:閘極層 110a、112、114:閘極 116、118、120、128、130、138:介電層 122、124、126:間隙壁 132、134:圖案化光阻層 136:開槽式遮光層 136a:開口 140、142:遮光層 G:凹槽10: Image sensor 100: base 102: photosensitive element 102a, 106: doped area 104: pinned layer 108: Floating diffusion area 110: gate layer 110a, 112, 114: gate 116, 118, 120, 128, 130, 138: Dielectric layer 122, 124, 126: gap wall 132, 134: Patterned photoresist layer 136: Slotted shading layer 136a: opening 140, 142: shading layer G: Groove

圖1A至圖1G為本發明一實施例的影像感測器的製作流程剖面圖。 圖2為圖1G的影像感測器中的部分構件的上視圖。 1A to 1G are cross-sectional views of the manufacturing process of an image sensor according to an embodiment of the invention. 2 is a top view of some components in the image sensor of FIG. 1G.

10:影像感測器 10: Image sensor

100:基底 100: base

102:感光元件 102: photosensitive element

102a、106:摻雜區 102a, 106: doped area

104:釘紮層 104: pinned layer

108:浮置擴散區 108: Floating diffusion area

110a、112、114:閘極 110a, 112, 114: gate

116、118、120、128、130、138:介電層 116, 118, 120, 128, 130, 138: Dielectric layer

122、124、126:間隙壁 122, 124, 126: gap wall

136:開槽式遮光層 136: Slotted shading layer

136a:開口 136a: opening

140、142:遮光層 140, 142: shading layer

G:凹槽 G: Groove

Claims (20)

一種影像感測器，包括： 基底； 感光元件，位在所述基底中； 摻雜區，位在所述感光元件的一側的所述基底中； 第一閘極，設置在所述摻雜區上方，其中所述第一閘極具有凹槽； 開槽式遮光層，設置在所述凹槽的表面上，且位在所述摻雜區上方；以及 第二閘極，設置在所述感光元件與所述摻雜區之間的所述基底上。 An image sensor, including: Base The photosensitive element is located in the substrate; The doped area is located in the substrate on one side of the photosensitive element; The first gate electrode is arranged above the doped region, wherein the first gate electrode has a groove; A slotted light-shielding layer is disposed on the surface of the groove and located above the doped region; and The second gate is arranged on the substrate between the photosensitive element and the doped region. 如申請專利範圍第1項所述的影像感測器，其中所述感光元件包括光二極體。The image sensor according to claim 1, wherein the photosensitive element includes a photodiode. 如申請專利範圍第1項所述的影像感測器，其中所述開槽式遮光層的材料包括金屬矽化物。The image sensor according to claim 1, wherein the material of the slotted light shielding layer includes metal silicide. 如申請專利範圍第1項所述的影像感測器，其中所述開槽式遮光層更設置在所述第一閘極的頂面上。According to the image sensor described in claim 1, wherein the slotted light shielding layer is further disposed on the top surface of the first gate electrode. 如申請專利範圍第1項所述的影像感測器，其中所述開槽式遮光層的開口朝向遠離所述基底的方向。The image sensor according to claim 1, wherein the opening of the slotted light shielding layer faces away from the substrate. 如申請專利範圍第1項所述的影像感測器，其中所述開槽式遮光層接地或電連接至偏壓。The image sensor according to claim 1, wherein the slotted light shielding layer is grounded or electrically connected to a bias voltage. 如申請專利範圍第1項所述的影像感測器，更包括： 浮置擴散區，位在所述摻雜區的遠離所述感光元件的一側的所述基底中。 The image sensor described in item 1 of the scope of patent application further includes: The floating diffusion region is located in the substrate on the side of the doped region away from the photosensitive element. 如申請專利範圍第7項所述的影像感測器，更包括： 第三閘極，設置在所述摻雜區與所述浮置擴散區之間的所述基底上。 The image sensor described in item 7 of the scope of patent application further includes: The third gate is arranged on the substrate between the doped region and the floating diffusion region. 如申請專利範圍第8項所述的影像感測器，其中所述第一閘極與所述基底彼此絕緣，所述第二閘極與所述基底彼此絕緣，且所述第三閘極與所述基底彼此絕緣。The image sensor according to claim 8, wherein the first gate and the substrate are insulated from each other, the second gate and the substrate are insulated from each other, and the third gate is insulated from each other The substrates are insulated from each other. 如申請專利範圍第7項所述的影像感測器，其中所述基底具有第一導電型，且所述摻雜區與所述浮置擴散區具有第二導電型。The image sensor according to claim 7, wherein the substrate has a first conductivity type, and the doped region and the floating diffusion region have a second conductivity type. 如申請專利範圍第1項所述的影像感測器，更包括： 介電層，覆蓋所述開槽式遮光層；以及 至少一個第一遮光層，設置在所述介電層中，且連接於所述開槽式遮光層。 The image sensor described in item 1 of the scope of patent application further includes: A dielectric layer covering the slotted light shielding layer; and At least one first light shielding layer is arranged in the dielectric layer and connected to the slotted light shielding layer. 如申請專利範圍第11項所述的影像感測器，其中所述至少一個第一遮光層環繞所述摻雜區。The image sensor according to claim 11, wherein the at least one first light shielding layer surrounds the doped region. 如申請專利範圍第11項所述的影像感測器，更包括： 第二遮光層，設置在所述介電層上，且連接於所述至少一個第一遮光層。 The image sensor described in item 11 of the scope of patent application further includes: The second light shielding layer is arranged on the dielectric layer and connected to the at least one first light shielding layer. 一種影像感測器的製造方法，包括： 提供基底； 在所述基底中形成感光元件； 在所述感光元件的一側的所述基底中形成摻雜區； 在所述摻雜區上方形成第一閘極，其中所述第一閘極具有凹槽； 在所述感光元件與所述摻雜區之間的所述基底上形成第二閘極；以及 在所述凹槽的表面上形成開槽式遮光層，其中所述開槽式遮光層位在所述摻雜區上方。 A method for manufacturing an image sensor includes: Provide a base Forming a photosensitive element in the substrate; Forming a doped region in the substrate on one side of the photosensitive element; Forming a first gate electrode above the doped region, wherein the first gate electrode has a groove; Forming a second gate electrode on the substrate between the photosensitive element and the doped region; and A slotted light shielding layer is formed on the surface of the groove, wherein the slotted light shielding layer is located above the doped region. 如申請專利範圍第14項所述的影像感測器的製造方法，其中所述第一閘極的形成方法包括： 在所述摻雜區上方形成閘極層； 在所述閘極層上形成圖案化光阻層，其中所述圖案化光阻層暴露出部分所述閘極層；以及 使用所述圖案化光阻層作為罩幕，移除部分所述閘極層。 The manufacturing method of the image sensor as described in claim 14, wherein the method of forming the first gate includes: Forming a gate layer above the doped region; Forming a patterned photoresist layer on the gate layer, wherein the patterned photoresist layer exposes part of the gate layer; and Using the patterned photoresist layer as a mask, part of the gate layer is removed. 如申請專利範圍第14項所述的影像感測器的製造方法，其中所述開槽式遮光層的形成方法包括進行自對準金屬矽化物製程。According to the method for manufacturing an image sensor according to claim 14, wherein the method for forming the slotted light shielding layer includes a self-aligned metal silicide process. 如申請專利範圍第14項所述的影像感測器的製造方法，更包括： 在所述摻雜區的遠離所述感光元件的一側的所述基底中形成浮置擴散區。 The manufacturing method of the image sensor as described in item 14 of the scope of patent application further includes: A floating diffusion region is formed in the substrate on the side of the doped region away from the photosensitive element. 如申請專利範圍第17項所述的影像感測器的製造方法，更包括在所述摻雜區與所述浮置擴散區之間的所述基底上形成第三閘極。The manufacturing method of the image sensor as described in the scope of the patent application item 17 further includes forming a third gate electrode on the substrate between the doped region and the floating diffusion region. 如申請專利範圍第14項所述的影像感測器的製造方法，更包括： 形成覆蓋所述開槽式遮光層的介電層；以及 在所述介電層中形成至少一個第一遮光層，其中所述至少一個第一遮光層連接於所述開槽式遮光層。 The manufacturing method of the image sensor as described in item 14 of the scope of patent application further includes: Forming a dielectric layer covering the slotted light shielding layer; and At least one first light shielding layer is formed in the dielectric layer, wherein the at least one first light shielding layer is connected to the slotted light shielding layer. 如申請專利範圍第19項所述的影像感測器的製造方法，更包括： 在所述介電層上形成第二遮光層，其中所述第二遮光層連接於所述至少一個第一遮光層。 The manufacturing method of the image sensor as described in item 19 of the scope of patent application further includes: A second light shielding layer is formed on the dielectric layer, wherein the second light shielding layer is connected to the at least one first light shielding layer.
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WO2009073866A1 (en) * 2007-12-07 2009-06-11 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Gate after diamond transistor
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