TWI698392B - Micromechanical sensor apparatus and corresponding production method - Google Patents
Micromechanical sensor apparatus and corresponding production method Download PDFInfo
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- TWI698392B TWI698392B TW106106262A TW106106262A TWI698392B TW I698392 B TWI698392 B TW I698392B TW 106106262 A TW106106262 A TW 106106262A TW 106106262 A TW106106262 A TW 106106262A TW I698392 B TWI698392 B TW I698392B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/122—Circuits particularly adapted therefor, e.g. linearising circuits
- G01N27/123—Circuits particularly adapted therefor, e.g. linearising circuits for controlling the temperature
Abstract
Description
本發明係關於一種微機械感測器設備及一種藉由加熱裝置之相關的製造方法。 The present invention relates to a micro-mechanical sensor device and a related manufacturing method using a heating device.
儘管具有加熱裝置之任意微機械組件亦係可適用的，但將參考具有基於矽與加熱裝置(加熱板)之氣體感測器的組件而解釋本發明及藉由本發明所解決之問題。 Although any micromechanical component with a heating device is also applicable, the invention and the problems solved by the invention will be explained with reference to a component with a gas sensor based on silicon and a heating device (heating plate).
微型加熱板係微機械感測器之重要組件。該等微型加熱板對於功能原理而言在需要高溫之感測器原理的狀況下得以使用。在此處可主要提及在化學換能器原理情況下之氣體感測器：所要化學反應尚未在室溫下進行，而是需要某一活化能且因此需要較高操作溫度。此類型之傳統感測器係例如典型地必須在250℃與400℃之間操作的金屬氧化物氣體感測器。 The micro heating plate is an important component of the micro mechanical sensor. These mini-heating plates can be used under conditions that require high-temperature sensor principles for functional principles. Here we can mainly mention the gas sensor in the case of the chemical transducer principle: the desired chemical reaction has not been carried out at room temperature, but a certain activation energy is required and therefore a higher operating temperature. Traditional sensors of this type are, for example, metal oxide gas sensors that typically must operate between 250°C and 400°C.
除了化學感測器以外，加熱板亦用於在物理換能器原理情況下之感測器，諸如導熱率感測器、皮冉尼(Pirani)元件(真空感測器)或質量流率感測器。 In addition to chemical sensors, heating plates are also used for sensors based on the principle of physical transducers, such as thermal conductivity sensors, Pirani elements (vacuum sensors) or mass flow rate sensors. Detector.
根據先前技術，微型加熱板作為閉合隔膜或藉助於懸置式隔
膜加以生產，如Isolde Simon等人在Sensors and Actuators B 73(2001)之Micromachined metal oxide gas sensors：opportunities to improve sensor performance第1頁至第26頁中所描述。
According to the prior art, the micro heating plate is used as a closed diaphragm or by means of a suspended diaphragm
The film is produced, as described in Micromachined metal oxide gas sensors: Opportunities to improve sensor performance by Isolde Simon et al. in Sensors and Actuators B 73 (2001) on
根據先前技術之具有微型加熱板的此類感測器元件典型地具有大於1mm×1mm之側向尺寸。為了滿足(諸如)呈現於例如智慧型電話中之消費型電子裝置的要求，目前爭取小於約1mm×1mm之側向尺寸的小型化，且同時需要功率需求之減小。除了關於特殊加熱器設計之挑戰以外，可供用於晶片黏著性接合之區域亦因此正變得愈來愈小，且對於適合於製造之構造及連接技術的挑戰正因此亦增大。 Such sensor elements with miniature heating plates according to the prior art typically have lateral dimensions greater than 1 mm×1 mm. In order to meet the requirements of consumer electronic devices such as those present in, for example, smart phones, miniaturization of lateral dimensions less than about 1 mm×1 mm is currently striving for, and at the same time, a reduction in power requirements is required. In addition to the challenges related to the design of special heaters, the area available for chip adhesive bonding is becoming smaller and smaller, and the challenges to the structure and connection technology suitable for manufacturing are also increasing.
懸置式隔膜(諸如例如藉助於表面微機械加工技術生產)得到關於「晶片處置」及黏著性接合之優點，此係因為晶片在此狀況下可以黏著方式接合於後側上之整個區域上方，且可能的黏著性接合區域因此相較於在藉助於濕式化學曝光(使用例如KOH)或乾式蝕刻(使用例如DRIE)自後部曝露之隔膜的狀況下要大得非常多。然而，閉合隔膜(典型地處於抗張應力下之隔膜)關於穩固性及與各種塗佈方法之相容性具有優點，使得其將仍保留其甚至在極其小型化系統之狀況下存在的權利，儘管黏著性接合區域較小。 Suspended diaphragms (such as, for example, produced by surface micromachining technology) have advantages regarding "chip handling" and adhesive bonding, because the chip can be adhesively bonded over the entire area on the rear side under this condition, and The possible adhesive bonding area is therefore much larger than in the case of a diaphragm exposed from the rear by wet chemical exposure (using for example KOH) or dry etching (using, for example, DRIE). However, the closed diaphragm (the diaphragm typically under tensile stress) has advantages in terms of stability and compatibility with various coating methods, so that it will still retain its right to exist even in an extremely miniaturized system. Although the adhesive bonding area is small.
使用表面微機械加工技術來懸置於腹板上之隔膜，例如與使用整體微機械加工之閉合隔膜相比，具有中心之載體結構對機械負載(諸如振動或衝擊)敏感地作出反應之性質。此外，其機械穩定性相對於特定塗佈方法(諸如時間壓力施配)係不充分的。在使用表面微機械加工技術之閉合隔膜的狀況下，閉合空腔以由生產控管之方式在晶圓表面處出現。 在此處取決於閉合方法而設定介於大氣壓力與數豪巴之間的壓力。若在大氣壓下執行閉合，則圍封氣體在操作期間加熱，且發生隔膜之變形。此又引起隔膜上之阻抗改變及對感測器效能之影響。若在毫巴範圍內執行閉合，則隔膜由周圍大氣壓力偏轉。然而，此偏轉對生產過程具有不利影響，此係因為例如隔膜不定位於與晶圓表面相同之焦平面中，且成像像差因此在微影製程中出現。在兩種狀況下，有必要特別注意應用氣敏材料之方法，以便能夠可靠地避免對隔膜之機械損壞。 The surface micromachining technology is used to suspend the diaphragm on the web. For example, compared with the closed diaphragm using integral micromachining, the carrier structure has the property of sensitively responding to mechanical loads (such as vibration or impact). In addition, its mechanical stability is insufficient relative to specific coating methods (such as time pressure dispensing). In the case of the closed diaphragm using surface micromachining technology, the closed cavity appears on the surface of the wafer in a manner controlled by the production. Here, depending on the closing method, a pressure between atmospheric pressure and several millibars is set. If the closing is performed under atmospheric pressure, the enclosed gas will heat up during the operation and the diaphragm will deform. This in turn causes the impedance on the diaphragm to change and affect the performance of the sensor. If the closing is performed in the millibar range, the diaphragm is deflected by the surrounding atmospheric pressure. However, this deflection has an adverse effect on the production process because, for example, the diaphragm is not positioned in the same focal plane as the wafer surface, and imaging aberrations therefore appear in the lithography process. Under two conditions, it is necessary to pay special attention to the method of applying gas-sensitive materials in order to reliably avoid mechanical damage to the diaphragm.
結果，對用於塗佈之可能方法的選擇受到限制。僅使結構僅經受低機械負載之方法係因此適當的。通常可例如藉助於CVD、PCD或噴墨法僅沈積薄膜類層；排除例如藉助於噴塗法之藉由糊狀或液態材料的常常合乎需要之塗佈、藉助於時間壓力之印刷法、或轉印法或印模法。 As a result, the choice of possible methods for coating is limited. The method of merely subjecting the structure to only low mechanical loads is therefore appropriate. Generally, only thin-film-like layers can be deposited, for example, by means of CVD, PCD or inkjet methods; often desirable coating by means of paste or liquid materials, for example, by spraying, printing by means of time pressure, or transfer, is excluded. Printing method or impression method.
同樣地，例如具有較大重量之較大層厚度，在懸置於腹板上之表面微機械加工隔膜的狀況下，應被視為重要的，此係因為可能特定地在振動之後即刻建立對懸置物之損壞。 Similarly, for example, a larger layer thickness with a larger weight should be regarded as important in the case of a surface micro-machined diaphragm suspended on the web, because the suspension may be specifically established immediately after vibration. Damage to storage.
圖3係用於闡明由本發明解決之問題的微機械感測器設備之示意性橫截面圖。 Fig. 3 is a schematic cross-sectional view of a micromechanical sensor device used to illustrate the problem solved by the present invention.
在圖3中，參考符號1指示載體基板，例如陶瓷載體基板或印刷電路板。具有前側VS及後側RS之MEMS感測器基板MC藉助於黏著層KL在基板MC之後側RS處以黏著方式接合至載體基板1上。
In FIG. 3,
MEMS感測器基板MC具有自後側RS朝向前側VS延伸之後側空腔K。後側空腔K之側壁S'具有在生產過程期間源自濕式化學蝕刻(例如，KOH)之傾斜齒腹。 The MEMS sensor substrate MC has a rear cavity K extending from the rear side RS toward the front side VS. The side wall S'of the back cavity K has an inclined tooth flank derived from wet chemical etching (for example, KOH) during the production process.
在前側VS上，閉合隔膜區M由MEMS感測器基板MC之前側VS上的功能層FS形成，該隔膜區配置於後側空腔K上方。可由個別層(例如氧化矽、氮化矽或碳化矽)或由層序列(例如由氧化矽及氮化矽層)建構功能層FS及因此隔膜區M，額外金屬導體軌道定位於該等層中及/或該等層上，額外金屬導體軌道可具有加熱器及/或電極之功能。 On the front side VS, the closed diaphragm area M is formed by the functional layer FS on the front side VS of the MEMS sensor substrate MC, and the diaphragm area is disposed above the back cavity K. The functional layer FS and therefore the diaphragm region M can be constructed from individual layers (such as silicon oxide, silicon nitride, or silicon carbide) or from layer sequences (such as silicon oxide and silicon nitride layers), with additional metal conductor tracks positioned in these layers And/or on these layers, additional metal conductor tracks can function as heaters and/or electrodes.
加熱裝置HE在其中心整合至隔膜區M中，隔膜區M可藉助於該加熱裝置加熱至預定溫度。感測器區SB配置於隔膜區M中之加熱裝置HE上方，該感測器區包含例如基於金屬氧化物的厚膜或基於金屬氧化物的薄膜及嵌入於該感測器區中之電極，因此以便實現例如氣體感測器設備。 The heating device HE is integrated into the diaphragm area M at its center, and the diaphragm area M can be heated to a predetermined temperature by means of the heating device. The sensor area SB is disposed above the heating device HE in the diaphragm area M. The sensor area includes, for example, a thick film based on metal oxide or a thin film based on metal oxide and electrodes embedded in the sensor area, Therefore in order to realize, for example, a gas sensor device.
黏著層KL之黏著性接合並非周界性的(例如點狀或條狀)，亦即，不覆蓋整個後側RS，使得氣體體積可在加熱裝置HE之加熱操作期間在後側空腔K內膨脹，亦即，與環境之氣體交換可發生。此防止隔膜區M經受可在感測器操作期間引起隔膜區M之磨損的連續壓力改變。 The adhesive bonding of the adhesive layer KL is not perimeter (such as dots or strips), that is, does not cover the entire rear side RS, so that the gas volume can be in the rear cavity K during the heating operation of the heating device HE Expansion, that is, gas exchange with the environment can occur. This prevents the diaphragm area M from undergoing continuous pressure changes that can cause wear of the diaphragm area M during sensor operation.
本發明提供一種如申請專利範圍第1項之微機械感測器設備及一種如申請專利範圍第11項之製造一微機械感測器設備之相關的製造方法。 The present invention provides a micromechanical sensor device such as the 1st patent application and a related manufacturing method for manufacturing a micromechanical sensor device such as the 11th patent application.
各別附屬請求項係關於本發明的較佳發展。 The respective dependent claims are related to the preferred development of the present invention.
本發明之優點 Advantages of the invention
本發明下之概念係該隔膜區具有用於該後側空腔之壓力等化的一或多個壓力等化孔。 The concept under the present invention is that the diaphragm area has one or more pressure equalization holes for pressure equalization of the back cavity.
本發明因此使得有可能在一小型化感測器基板之狀況下提供一完全或實質上環形周界黏著性接合及實現充分氣體交換，而不管此環形黏著性接合。因此有可能避免該感測器基板由於氣體膨脹而在構造及連接技術之過程中在必需烘烤步驟期間傾斜的一情形，且一後續線接合製程因此係不可能的。此外，可避免或補償在該加熱裝置之加熱操作期間的壓力改變。 The present invention therefore makes it possible to provide a completely or substantially annular peripheral adhesive bond and achieve sufficient gas exchange regardless of the annular adhesive bond under the condition of a miniaturized sensor substrate. Therefore, it is possible to avoid the situation where the sensor substrate is inclined during the necessary baking step during the construction and connection technology due to gas expansion, and a subsequent wire bonding process is therefore impossible. In addition, pressure changes during the heating operation of the heating device can be avoided or compensated.
其他優點係進一步處理步驟之一高製造可靠性。該等壓力等化孔可經定位/設定尺寸，使得維持一箝位閉合隔膜與懸置於腹板上之一隔膜相比的有利性質。具有數μm之範圍內的一直徑之孔對於充分通風而言將足夠。 Another advantage is high manufacturing reliability as one of the further processing steps. The pressure equalization holes can be positioned/sized to maintain the advantageous properties of a clamped closed diaphragm compared to a diaphragm suspended on the web. A hole with a diameter in the range of several μm will be sufficient for sufficient ventilation.
可達成一穩固黏著性接合製程，而不管一小的黏著性接合區域(側向地具有小於或等於1mm×1mm之典型感測器元件尺寸)。 A stable adhesive bonding process can be achieved regardless of a small adhesive bonding area (laterally having a typical sensor element size less than or equal to 1mm×1mm).
該氣體交換特別有利於真空及導熱率感測器，此係因為在此處量測原理係基於以下事實：一加熱元件之熱耗散隨周圍氣體之導熱率變化。在無通風之情況下，僅該隔膜上方之氣體可促成量測；在通風之情況下，該隔膜下方之氣體亦可促成量測信號。 This gas exchange is particularly advantageous for vacuum and thermal conductivity sensors, because the measurement principle here is based on the fact that the heat dissipation of a heating element varies with the thermal conductivity of the surrounding gas. In the case of no ventilation, only the gas above the diaphragm can contribute to the measurement; in the case of ventilation, the gas below the diaphragm can also contribute to the measurement signal.
根據一個較佳發展，該(等)壓力等化孔以變化之大小提供。可因此達成關於機械穩定性之一最佳化。 According to a preferred development, the (equal) pressure equalization holes are provided in varying sizes. One of the optimizations regarding mechanical stability can therefore be achieved.
根據一個較佳發展，該(等)壓力等化孔在該感測器區及該加熱裝置外部配置於該隔膜區之一外部邊緣區中。該等壓力等化孔因此不影響感測器功能。為了能夠確保該隔膜之最高可能機械穩定性，該等孔理想上引入於該隔膜之具有一應力最小值的區中，或定位於其附近。 According to a preferred development, the pressure equalization hole(s) is arranged in an outer edge area of the diaphragm area outside the sensor area and the heating device. The pressure equalization holes therefore do not affect the function of the sensor. In order to be able to ensure the highest possible mechanical stability of the membrane, the holes are ideally introduced in the region of the membrane with a minimum stress, or located near it.
根據另一較佳發展，該後側空腔之側壁實質上垂直於該前側而延行。此實現另一小型化。 According to another preferred development, the side wall of the rear cavity extends substantially perpendicular to the front side. This achieves another miniaturization.
根據另一較佳發展，該後側以使得該後側空腔在該後側處氣密密封的方式藉助於一黏著區以黏著方式接合於一載體基板上。此在上升之小型化的狀況下提高穩定性。 According to another preferred development, the back side is adhesively bonded to a carrier substrate by means of an adhesive zone in such a way that the back side cavity is hermetically sealed at the back side. This improves stability in the context of increasing miniaturization.
根據另一較佳發展，該後側藉助於一黏著區以黏著方式接合於一載體基板上，其中提供用於該感測器基板中之該後側空腔的壓力等化之一壓力等化通道。此進一步改良該壓力等化，而不會降低穩定性。 According to another preferred development, the back side is adhesively bonded to a carrier substrate by means of an adhesive zone, wherein a pressure equalization is provided for the pressure equalization of the back cavity in the sensor substrate aisle. This further improves the pressure equalization without reducing stability.
根據另一較佳發展，該後側藉助於一黏著區以黏著方式接合於一載體基板上，其中提供用於該載體基板中之該後側空腔的壓力等化之一壓力等化通道。此甚至進一步改良該壓力等化，而不會降低穩定性。 According to another preferred development, the back side is adhesively bonded to a carrier substrate by means of an adhesive zone, wherein a pressure equalization channel is provided for the pressure equalization of the back cavity in the carrier substrate. This improves the pressure equalization even further without reducing stability.
根據另一較佳發展，將該加熱裝置引入於該隔膜區中，且將該感測器區提供於該隔膜區上之該加熱裝置上方。因此確保一高效加熱功能。 According to another preferred development, the heating device is introduced into the diaphragm area, and the sensor area is provided above the heating device on the diaphragm area. Therefore, an efficient heating function is ensured.
根據另一較佳發展，該感測器區包含一氣體感測器區或一導熱率感測器區或一紅外感測器區或一質量流率感測器區。 According to another preferred development, the sensor area includes a gas sensor area or a thermal conductivity sensor area or an infrared sensor area or a mass flow rate sensor area.
根據另一較佳發展，該(等)壓力等化孔之直徑為1μm至50μm，較佳地1μm至10μm。此減小該等壓力等化孔之機械影響，且對於所要壓力等化功能而言足夠。該等壓力等化孔較佳地定位於該隔膜區之具有低機械應力的區中，及/或該等壓力等化孔定位於該加熱裝置及該感測器區之區中。 According to another preferred development, the diameter of the (equal) pressure equalization hole is 1 μm to 50 μm, preferably 1 μm to 10 μm. This reduces the mechanical influence of the pressure equalization holes and is sufficient for the desired pressure equalization function. The pressure equalization holes are preferably located in the area of the diaphragm area with low mechanical stress, and/or the pressure equalization holes are located in the area of the heating device and the sensor area.
1‧‧‧載體基板 1‧‧‧Carrier substrate
AK‧‧‧壓力等化通道 AK‧‧‧Pressure equalization channel
FS‧‧‧功能層 FS‧‧‧Functional layer
HE‧‧‧加熱裝置 HE‧‧‧Heating device
K‧‧‧後側空腔 K‧‧‧Back cavity
KL‧‧‧黏著區/黏著層 KL‧‧‧Adhesive area/Adhesive layer
L1‧‧‧壓力等化孔 L1‧‧‧Pressure equalization hole
L2‧‧‧壓力等化孔 L2‧‧‧Pressure equalization hole
L3‧‧‧壓力等化孔 L3‧‧‧Pressure equalization hole
L4‧‧‧壓力等化孔 L4‧‧‧Pressure equalization hole
L5‧‧‧壓力等化孔 L5‧‧‧Pressure equalization hole
L6‧‧‧壓力等化孔 L6‧‧‧Pressure equalization hole
M‧‧‧隔膜區 M‧‧‧ Diaphragm area
MC‧‧‧感測器基板 MC‧‧‧Sensor substrate
RS‧‧‧後側 RS‧‧‧Rear
S‧‧‧側壁 S‧‧‧ side wall
S'‧‧‧側壁 S'‧‧‧ side wall
SB‧‧‧感測器區 SB‧‧‧Sensor area
VS‧‧‧前側 VS‧‧‧Front side
圖1a)、圖1b)展示用於闡明根據本發明之第一具體實例的微機械感測器設備之示意性說明，具體言之圖1a)以橫截面且圖1b)以平面視圖展示；圖2a)、圖2b)展示用於闡明根據本發明之第二具體實例的微機械感測器設備之示意性說明，具體言之圖2a)以平面視圖且圖2b)以側視圖展示；且圖3展示用於闡明由本發明解決之問題的微機械感測器設備之示意性橫截面圖。 Figures 1a) and 1b) show a schematic illustration of a micromechanical sensor device according to a first specific example of the present invention, in particular, Figure 1a) is shown in cross section and Figure 1b) is shown in plan view; 2a), Fig. 2b) shows a schematic illustration for explaining the micromechanical sensor device according to the second specific example of the present invention, specifically Fig. 2a) is shown in a plan view and Fig. 2b) is shown in a side view; and 3 shows a schematic cross-sectional view of the micromechanical sensor device used to illustrate the problem solved by the present invention.
在圖式中，相同參考符號指定相同或功能上相同之元件。 In the drawings, the same reference signs designate the same or functionally same elements.
圖1a)、圖1b)係用於闡明根據本發明之第一具體實例的微機械感測器設備之示意性說明，具體言之圖1a)呈橫截面且圖1b)呈平面視圖。 Figures 1a) and 1b) are used to illustrate a schematic illustration of a micromechanical sensor device according to a first specific example of the present invention. Specifically, Figure 1a) is a cross section and Figure 1b) is a plan view.
在圖1a)、圖1b)中，參考符號1指示載體基板，例如陶瓷載體基板或印刷電路板。具有前側VS及後側RS之MEMS感測器基板MC藉助於黏著層KL在基板MC之後側RS處以黏著方式接合至載體基板1上。黏著層KL之黏著性接合係周界性的，此在提前小型化之狀況下支援穩定性。
In FIGS. 1a) and 1b),
MEMS感測器基板MC具有自後側RS朝向前側VS延伸之後側空腔K。相比於上文相對於圖3所描述之後側空腔，後側空腔K之側壁S具有在生產過程期間源自各向異性蝕刻之豎直齒腹。此支援小型化。藉助於側壁S採用直線豎直形式且實質上垂直於隔膜區M或前側VS之平 面而延行的事實，可在隔膜區之預定大小的狀況下生產儘可能小之感測器設備。出於此目的之一個尤其較佳可能性係乾式蝕刻製程(DRIE)之使用。 The MEMS sensor substrate MC has a rear cavity K extending from the rear side RS toward the front side VS. Compared to the back side cavity described above with respect to FIG. 3, the side wall S of the back side cavity K has a vertical flank derived from anisotropic etching during the production process. This supports miniaturization. With the help of the side wall S adopts a straight vertical form and is substantially perpendicular to the flat diaphragm area M or front side VS It is possible to produce the smallest possible sensor device under the condition of the predetermined size of the diaphragm area. A particularly preferred possibility for this purpose is the use of dry etching processes (DRIE).
在前側VS上，閉合隔膜區M由MEMS感測器基板MC之前側VS上的功能層FS形成，該隔膜區配置於後側空腔K上方。可由個別層(例如氧化矽、氮化矽或碳化矽)或由層序列(例如由氧化矽及氮化矽層)建構功能層FS及因此隔膜區M，額外金屬導體軌道定位於該等層中及/或該等層上，額外金屬導體軌道可具有加熱器及/或電極之功能。 On the front side VS, the closed diaphragm area M is formed by the functional layer FS on the front side VS of the MEMS sensor substrate MC, and the diaphragm area is disposed above the back cavity K. The functional layer FS and therefore the diaphragm region M can be constructed from individual layers (such as silicon oxide, silicon nitride, or silicon carbide) or from layer sequences (such as silicon oxide and silicon nitride layers), with additional metal conductor tracks positioned in these layers And/or on these layers, additional metal conductor tracks can function as heaters and/or electrodes.
加熱裝置HE在其中心整合至隔膜區M中，隔膜區M可藉助於該加熱裝置加熱至預定溫度。感測器區SB配置於隔膜區M中之加熱裝置HE上方，該感測器區包含例如電極結構上之基於金屬氧化物的厚膜或基於金屬氧化物的薄膜，因此以便實現例如氣體感測器設備。 The heating device HE is integrated into the diaphragm area M at its center, and the diaphragm area M can be heated to a predetermined temperature by means of the heating device. The sensor area SB is disposed above the heating device HE in the diaphragm area M. The sensor area includes, for example, a thick metal oxide-based film or a metal oxide-based thin film on the electrode structure, so as to achieve, for example, gas sensing器设备。 Device.
相比於上文聯合圖3所解釋之MEMS感測器設備，隔膜區M在第一具體實例之狀況下具有壓力等化孔L1、L2、L3、L4、L5、L6，該等壓力等化孔在加熱裝置HE及配置於其上方之感測器區SB外部配置於隔膜區M之邊緣區中。 Compared with the MEMS sensor device explained above in conjunction with FIG. 3, the diaphragm region M has pressure equalization holes L1, L2, L3, L4, L5, and L6 under the conditions of the first specific example. The holes are arranged in the edge area of the diaphragm area M outside the heating device HE and the sensor area SB arranged above it.
該等壓力等化孔之直徑較佳地為介於1μm與50μm之間，較佳地介於1μm與10μm之間。壓力等化孔L1至L6較佳地配置於隔膜區M之具有低機械應力的區中。除了壓力等化效應之外，壓力等化孔亦可改良隔膜區M之熱絕緣。 The diameters of the pressure equalization holes are preferably between 1 μm and 50 μm , preferably between 1 μm and 10 μm . The pressure equalization holes L1 to L6 are preferably arranged in the region of the diaphragm region M with low mechanical stress. In addition to the pressure equalization effect, the pressure equalization hole can also improve the thermal insulation of the diaphragm area M.
圖2a)、圖2b)係用於闡明根據本發明之第二具體實例的微機械感測器設備之示意性說明，具體言之圖2a)呈平面視圖且圖2b)呈側視圖。 Figures 2a) and 2b) are used to illustrate a schematic illustration of a micromechanical sensor device according to a second specific example of the present invention. Specifically, Figure 2a) is a plan view and Figure 2b) is a side view.
在第二具體實例之狀況下，壓力等化通道AK另外設置於感測器基板MC中，該壓力等化通道在以黏著方式接合至載體基板1上之狀態(此處未展示)下定位於黏著層KL之自由區中，使得額外壓力等化藉助於壓力等化通道AK成為可能。因此，在第二具體實例中僅提供四個壓力等化孔L1、L3、L4、L6。取決於壓力等化通道AK之組態，亦有可能省掉壓力等化孔L1、L3、L4、L6。
In the case of the second specific example, the pressure equalization channel AK is additionally provided in the sensor substrate MC, and the pressure equalization channel is positioned on the adhesive in a state (not shown here) being bonded to the
否則，第二具體實例等同於第一具體實例。 Otherwise, the second specific example is equivalent to the first specific example.
在另一具體實例(未說明)中，另外或作為感測器基板MC中之壓力等化通道AK的替代方案，有可能在後側空腔K下方之載體基板1中提供壓力等化通道。
In another specific example (not illustrated), in addition or as an alternative to the pressure equalization channel AK in the sensor substrate MC, it is possible to provide a pressure equalization channel in the
在分別根據第一及第二具體實例之MEMS感測器設備之生產期間，可藉由蝕刻製程(例如乾式蝕刻製程)或藉由雷射製程生產壓力等化孔。 During the production of the MEMS sensor device according to the first and second specific examples, respectively, the pressure equalization hole can be produced by an etching process (such as a dry etching process) or by a laser process.
因為用於生產隔膜區M之所描述方法涉及自晶圓後側RS之曝光蝕刻製程(在曝光蝕刻製程中藉助於DRIE蝕刻製程移除處於隔膜區M下方之矽層)，所以在在先前製程步驟中已將壓力等化孔L1至L6或L1至L4引入至功能層FS中且因此引入至隔膜區M中之情況下係有利的。在曝光隔膜區M之過程中，該等壓力等化孔打開，且使後一感測器元件中之隔膜區M的前側與後側之間的壓力等化成為可能。 Because the described method for producing the diaphragm region M involves the exposure and etching process from the backside RS of the wafer (the silicon layer under the diaphragm region M is removed by the DRIE etching process in the exposure and etching process), so in the previous process It is advantageous when the pressure equalization holes L1 to L6 or L1 to L4 have been introduced into the functional layer FS and therefore into the diaphragm region M in the step. In the process of exposing the diaphragm area M, the pressure equalization holes are opened, and it is possible to equalize the pressure between the front side and the back side of the diaphragm area M in the latter sensor element.
儘管已基於較佳例示性具體實例而描述本發明，但本發明不限於此。詳言之，所提及材料及拓樸結構係僅僅作為實例，且不限於所解釋實例。 Although the present invention has been described based on preferred exemplary specific examples, the present invention is not limited thereto. In detail, the materials and topology mentioned are only examples, and are not limited to the examples explained.
除了分別如第一及第二具體實例中所說明之壓力等化孔的位置以外，亦可設想其他實現形式，例如，不同數目個孔/孔形狀或者槽形具體實例或其類似者。 In addition to the positions of the pressure equalization holes as described in the first and second specific examples respectively, other implementation forms can also be envisaged, for example, different numbers of holes/hole shapes or groove-shaped specific examples or the like.
根據本發明之MEMS感測器設備的尤其較佳應用通常係包含隔膜且包含加熱裝置之所有感測器設備，例如除了化學氣體感測器以外，亦有(諸如)金屬氧化物氣體感測器、導熱率感測器、皮冉尼元件、質量流率感測器，諸如空氣質量流量量測裝置、微機械隔膜上之λ探測器、紅外感測器設備等。 Particularly preferred applications of the MEMS sensor device according to the present invention are generally all sensor devices that include a diaphragm and include a heating device. For example, in addition to chemical gas sensors, there are also (such as) metal oxide gas sensors. , Thermal conductivity sensor, Pirani element, mass flow rate sensor, such as air mass flow measurement device, lambda detector on micromechanical diaphragm, infrared sensor equipment, etc.
1‧‧‧載體基板 1‧‧‧Carrier substrate
FS‧‧‧功能層 FS‧‧‧Functional layer
HE‧‧‧加熱裝置 HE‧‧‧Heating device
K‧‧‧後側空腔 K‧‧‧Back cavity
KL‧‧‧黏著區 KL‧‧‧Adhesion area
L2‧‧‧壓力等化孔 L2‧‧‧Pressure equalization hole
L5‧‧‧壓力等化孔 L5‧‧‧Pressure equalization hole
M‧‧‧隔膜區 M‧‧‧ Diaphragm area
MC‧‧‧感測器基板 MC‧‧‧Sensor substrate
RS‧‧‧後側 RS‧‧‧Rear
S‧‧‧側壁 S‧‧‧ side wall
SB‧‧‧感測器區 SB‧‧‧Sensor area
VS‧‧‧前側 VS‧‧‧Front side
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