TWI698058B - Semiconductor laser device and manufacturing method thereof - Google Patents
Semiconductor laser device and manufacturing method thereof Download PDFInfo
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- TWI698058B TWI698058B TW105141439A TW105141439A TWI698058B TW I698058 B TWI698058 B TW I698058B TW 105141439 A TW105141439 A TW 105141439A TW 105141439 A TW105141439 A TW 105141439A TW I698058 B TWI698058 B TW I698058B
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- G—PHYSICS
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- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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Abstract
提供一種能夠實現透鏡曲率的設計自由度之提 升與光輸出降低之防止的半導體雷射裝置及其製造方法。 Provide a design freedom that can realize the curvature of the lens Semiconductor laser device and its manufacturing method for preventing increase and decrease of light output.
半導體雷射裝置(100)係具備:管座(21); 和半導體雷射元件(半導體雷射晶片(11)、次級基板(12)),係被搭載於管座(21),並射出雷射光(L);和蓋罩(31),係由可塑性變形之材料所構成,具有將半導體雷射元件予以包圍的筒狀之本體部(31a),本體部(31a)之一端側係被接合於管座(21);和透鏡(32),係在蓋罩(31)的本體部(31a)之他端側,以塞住該當本體部(31a)之開口部的方式而被固定。透鏡(32)係藉由蓋罩(31)的本體部(31a)的塑性變形,而被固定在本體部(31a)。 The semiconductor laser device (100) is equipped with: a tube socket (21); And semiconductor laser components (semiconductor laser chip (11), secondary substrate (12)) are mounted on the tube base (21) and emit laser light (L); and the cover (31) is made of plastic Composed of deformed material, it has a cylindrical body part (31a) that surrounds the semiconductor laser element. One end of the body part (31a) is joined to the stem (21); and the lens (32) is attached to The other end side of the main body (31a) of the cover (31) is fixed in such a way as to plug the opening of the corresponding main body (31a). The lens (32) is fixed to the main body (31a) by plastic deformation of the main body (31a) of the cover (31).
Description
本發明係有關於半導體雷射裝置及其製造方法。 The invention relates to a semiconductor laser device and its manufacturing method.
先前,將半導體雷射晶片配置在金屬製的管座,使用設有雷射光之出射窗的蓋罩而做密封的罐封裝型的半導體雷射裝置,已為人知。於如此的半導體雷射裝置中,在圓筒狀之蓋罩的一端是使用,固定有作為雷射光之出射窗的透鏡的附透鏡之蓋罩。 Previously, semiconductor laser devices of the can package type in which a semiconductor laser chip is arranged on a metal tube socket and sealed with a cover provided with an exit window of the laser light have been known. In such a semiconductor laser device, one end of a cylindrical cover is used, and a lens with a lens as an exit window of the laser light is fixed.
作為將透鏡固定在蓋罩的方法,係有例如專利文獻1所記載的技術。該技術,係在蓋罩的開口部滴下熔融玻璃,藉由使其固化,而在蓋罩的開口部形成透鏡。又,專利文獻2中係揭露,係藉由接著劑而將透鏡固定在蓋罩的技術。
As a method of fixing the lens to the cover, for example, there is a technique described in
[專利文獻1]日本特開平05-121841號公報 [Patent Document 1] Japanese Patent Application Publication No. 05-121841
[專利文獻2]日本特開2015-041736號公報 [Patent Document 2] JP 2015-041736 A
如上記專利文獻1所記載的技術般地,將熔融玻璃做滴下固定之方法的情況下,透鏡的曲率,係由表面張力與玻璃材的自重而被決定。因此,無法自由設計透鏡的曲率。又,在該方法下,在設計成表面具有反射防止膜之透鏡的情況下,則是將透鏡形成在蓋罩後進行鍍膜處理,但會因為蓋罩的形狀而使上記鍍膜處理變得困難。
As in the technique described in
又,如上記專利文獻2所記載之技術,將透鏡藉由接著劑而加以固定之方法的情況下,於製造過程中,透鏡的透光部分可能會被接著劑附著,導致光輸出降低。甚至,在蓋罩內被反射的迷光等會照射至接著劑,導致接著劑中所含有的揮發成分等會往透鏡面蒸鍍,污染光出射面而也可能導致光輸出降低的問題。 In addition, in the technique described in Patent Document 2 above, in the case of the method of fixing the lens with an adhesive, during the manufacturing process, the light-transmitting part of the lens may be adhered by the adhesive, resulting in a decrease in light output. Furthermore, the stray light reflected in the cover may irradiate the adhesive, causing the volatile components contained in the adhesive to vaporize on the lens surface, contaminating the light exit surface, and possibly causing the problem of reduced light output.
於是,本發明的課題在於,提供一種能夠實現透鏡曲率之設計自由度之提升與光輸出降低之防止的半導體雷射裝置及其製造方法。 Therefore, the subject of the present invention is to provide a semiconductor laser device and a manufacturing method thereof that can achieve an increase in the design freedom of the lens curvature and prevention of a decrease in light output.
為了解決上記課題,本發明所述之半導體雷射裝置的一態樣係具備:管座;和半導體雷射元件,係被搭載於前記管座,並射出雷射光;和蓋罩,係由可塑性變 形之材料所構成,具有將前記半導體雷射元件予以包圍的筒狀之本體部,前記本體部之一端側係被接合於前記管座;和透鏡,係在前記蓋罩的前記本體部之他端側,以塞住該當本體部之開口部的方式而被固定;前記透鏡,係藉由前記蓋罩的前記本體部的塑性變形,而被固定在該當本體部。 In order to solve the above problems, one aspect of the semiconductor laser device of the present invention includes: a tube base; and a semiconductor laser element, which is mounted on the front tube base and emits laser light; and a cover, which is made of plastic change It has a cylindrical body part that surrounds the semiconductor laser element of the shape, and one end side of the body part is joined to the tube holder; and the lens is attached to the body part of the preface cover. The end side is fixed in such a way as to plug the opening of the corresponding main body part; the front lens is fixed to the current main body by plastic deformation of the front body part of the front cover.
如此,將透鏡藉由蓋罩的塑性變形而加以固定,因此可提升透鏡的曲率之設計自由度。又,在透鏡的固定之際,不需要使用接著劑。因此,可防止接著劑所致之透鏡的污染,可防止半導體雷射裝置的光輸出之降低。 In this way, the lens is fixed by the plastic deformation of the cover, so that the design freedom of the curvature of the lens can be improved. In addition, it is not necessary to use an adhesive when fixing the lens. Therefore, the contamination of the lens caused by the adhesive can be prevented, and the decrease of the light output of the semiconductor laser device can be prevented.
又,於上記的半導體雷射裝置中,亦可為,前記本體部的前記他端側之外徑,係大於前記一端側之外徑。此情況下,將筒狀之密封電極裝著於蓋罩然後加壓、通電以使蓋罩與管座熔接時,較容易把密封電極從蓋罩拔下。因此,可適切地接合蓋罩與管座。 In addition, in the above-mentioned semiconductor laser device, it is also possible that the outer diameter of the other end side of the aforementioned main body part is greater than the outer diameter of the aforementioned one end side. In this case, when the cylindrical sealed electrode is mounted on the cover and then pressurized and energized to weld the cover to the base, it is easier to remove the sealed electrode from the cover. Therefore, the cover and the socket can be properly joined.
再者,於上記的半導體雷射裝置中,亦可為,前記蓋罩係具有:往前記本體部之內側面突出的突起部。此情況下,藉由突起部而可容易決定透鏡的高度方向位置。因此,可將從半導體雷射元件的發光點至透鏡的距離,設定成適切的距離。 Furthermore, in the above-mentioned semiconductor laser device, the front cover may have a protrusion that protrudes from the inner surface of the front body. In this case, the height direction position of the lens can be easily determined by the protrusion. Therefore, the distance from the light-emitting point of the semiconductor laser element to the lens can be set to an appropriate distance.
又,於上記的半導體雷射裝置中,亦可為,前記半導體雷射元件,係藉由前記蓋罩、前記透鏡及前記管座而被氣密密封。藉此,可實現高品質的半導體雷射裝置。 In addition, in the above-mentioned semiconductor laser device, the pre-semiconductor laser element may be hermetically sealed by the pre-scheduled cover, the pre-sent lens, and the pre-stake holder. In this way, a high-quality semiconductor laser device can be realized.
再者,於上記的半導體雷射裝置中,亦可為,前記透鏡係在其表面具有反射防止膜。藉此,可提升光輸出效率。 Furthermore, in the above-mentioned semiconductor laser device, the aforementioned lens system may have an anti-reflection film on its surface. In this way, the light output efficiency can be improved.
又,於上記的半導體雷射裝置中,亦可還具備:被配置在前記蓋罩的前記本體部與前記透鏡之間的環狀之間隔物。此情況下,可將透鏡藉由歛縫而固定於蓋罩。 In addition, the above-mentioned semiconductor laser device may further include a ring-shaped spacer arranged between the pre-recording body portion of the pre-recording cover and the pre-recording lens. In this case, the lens can be fixed to the cover by caulking.
再者,本發明所述之半導體雷射裝置的一態樣係具備:管座;和半導體雷射元件,係被搭載於前記管座,並射出雷射光;和蓋罩,係具有將前記半導體雷射元件予以包圍的筒狀之本體部,前記本體部之一端側係被接合於前記管座;和透鏡,係在前記蓋罩的前記本體部之他端側,以塞住該當本體部之開口部的方式而被固定;前記本體部的前記他端側之外徑,係大於前記一端側之外徑。 Furthermore, one aspect of the semiconductor laser device according to the present invention is provided with: a tube base; and a semiconductor laser element, which is mounted on the pre-marked tube base and emits laser light; and a cover, which has the pre-marked semiconductor In the cylindrical body part surrounded by the laser element, one end of the preface body part is joined to the preface tube holder; and the lens is attached to the other end side of the preface body part of the preface cover to plug the other end of the body part. It is fixed by means of an opening; the outside diameter of the other end of the main body of the preceding note is greater than the outside diameter of the one end of the preceding note.
又再者,本發明所述之半導體雷射裝置之製造方法的一態樣係包含:將半導體雷射元件固定於管座之工程;和使由可塑性變形之材料所構成的筒狀之本體部的一端做塑性變形,以塞住前記本體部之開口部的方式,固定透鏡之工程;和將前記蓋罩的前記本體部之他端側接合於前記管座之工程。 Furthermore, an aspect of the manufacturing method of the semiconductor laser device of the present invention includes: a process of fixing the semiconductor laser element to the base; and making a cylindrical body part made of plastically deformable material Plastic deformation at one end to plug the opening of the preface body part to fix the lens; and the process of joining the other end side of the preface body part of the preface cover to the preface tube seat.
如此,將透鏡藉由蓋罩的塑性變形而加以固定,因此可提升透鏡的曲率之設計自由度。又,在透鏡的固定之際,不需要使用接著劑。因此,可防止接著劑所致之透鏡的污染,可防止半導體雷射裝置的光輸出之降低。 In this way, the lens is fixed by the plastic deformation of the cover, so that the design freedom of the curvature of the lens can be improved. In addition, it is not necessary to use an adhesive when fixing the lens. Therefore, the contamination of the lens caused by the adhesive can be prevented, and the decrease of the light output of the semiconductor laser device can be prevented.
又,於上記的半導體雷射裝置之製造方法 中,將前記透鏡予以固定之工程係亦可包含;將前記透鏡***至前記本體部的前記開口部之工程;和在前記本體部與前記透鏡之間***環狀之間隔物之工程;和使前記間隔物做塑性變形之工程。此情況下,可將透鏡藉由歛縫而適切地固定於蓋罩。 Also, the manufacturing method of the semiconductor laser device mentioned above In, the engineering system for fixing the preface lens may also include; the process of inserting the preface lens into the preface opening of the preface body; and the process of inserting a ring-shaped spacer between the preface body and the preface lens; and The aforementioned spacer is plastically deformed. In this case, the lens can be appropriately fixed to the cover by caulking.
再者,於上記的半導體雷射裝置之製造方法中,亦可在將前記透鏡予以固定之工程之前,還包含:在前記透鏡的表面形成反射防止膜之工程。此情況下,可實現光輸出效率高的半導體雷射裝置。 Furthermore, in the above-mentioned method of manufacturing a semiconductor laser device, before the process of fixing the foregoing lens, the process of forming an anti-reflection film on the surface of the foregoing lens may also be included. In this case, a semiconductor laser device with high light output efficiency can be realized.
若依據本發明的半導體雷射裝置,則將半導體雷射晶片及次級基板予以密封的蓋罩上所被固定的透鏡的曲率之設計自由度,可被提升。又,可防止製造過程或使用過程中的透鏡之污染,可實現半導體雷射裝置的光輸出降低之防止。 According to the semiconductor laser device of the present invention, the design freedom of the curvature of the lens fixed on the cover that seals the semiconductor laser chip and the secondary substrate can be improved. In addition, it can prevent the contamination of the lens during the manufacturing process or the use process, and can prevent the reduction of the light output of the semiconductor laser device.
11‧‧‧半導體雷射晶片(晶片) 11‧‧‧Semiconductor laser chip (chip)
12‧‧‧次級基板 12‧‧‧Secondary substrate
21‧‧‧管座 21‧‧‧Tube seat
21a‧‧‧散熱片部 21a‧‧‧Heat sink
31‧‧‧蓋罩 31‧‧‧Cover
31a‧‧‧本體部 31a‧‧‧Main body
31b‧‧‧突起部 31b‧‧‧Protrusion
31c‧‧‧凸緣部 31c‧‧‧Flange
31d‧‧‧凸起 31d‧‧‧Protrusion
32‧‧‧透鏡 32‧‧‧Lens
33‧‧‧透鏡 33‧‧‧Lens
34‧‧‧間隔物 34‧‧‧Spacer
35‧‧‧蓋罩 35‧‧‧Cover
36‧‧‧透鏡 36‧‧‧Lens
41‧‧‧蓋罩側密封電極 41‧‧‧Seal electrode on cover side
42‧‧‧管座側密封電極 42‧‧‧Seal electrode on tube seat side
100,110,120‧‧‧半導體雷射裝置 100,110,120‧‧‧Semiconductor laser device
[圖1]第一實施形態中的半導體雷射裝置之構成例的剖面圖。 [Fig. 1] A cross-sectional view of a configuration example of the semiconductor laser device in the first embodiment.
[圖2]透鏡之固定方法的說明圖。 [Figure 2] An explanatory diagram of the lens fixing method.
[圖3]透鏡固定後的蓋罩的圖示。 [Fig. 3] An illustration of the cover after the lens is fixed.
[圖4]半導體雷射裝置之製造工程的說明圖。 [Figure 4] An explanatory diagram of the manufacturing process of the semiconductor laser device.
[圖5]半導體雷射裝置之製造工程的說明圖。 [Figure 5] An explanatory diagram of the manufacturing process of the semiconductor laser device.
[圖6]半導體雷射裝置之製造工程的說明圖。 [Figure 6] An explanatory diagram of the manufacturing process of the semiconductor laser device.
[圖7]熔接後的蓋罩之形狀的圖示。 [Figure 7] An illustration of the shape of the cover after welding.
[圖8]先前的半導體雷射裝置之製造工程的說明圖。 [Fig. 8] An explanatory diagram of the manufacturing process of the conventional semiconductor laser device.
[圖9]先前的熔接後的蓋罩之形狀的圖示。 [Fig. 9] An illustration of the shape of the cover after welding.
[圖10]第二實施形態中的半導體雷射裝置之構成例的剖面圖。 [Fig. 10] A cross-sectional view of a configuration example of the semiconductor laser device in the second embodiment.
[圖11]第二實施形態的透鏡之固定方法的說明圖。 [Fig. 11] An explanatory diagram of the lens fixing method of the second embodiment.
[圖12]第三實施形態中的半導體雷射裝置之構成例的剖面圖。 [Fig. 12] A cross-sectional view of a configuration example of the semiconductor laser device in the third embodiment.
以下,根據圖式來說明本發明的實施形態。 Hereinafter, an embodiment of the present invention will be described based on the drawings.
圖1係本實施形態中的半導體雷射裝置100之構成例的剖面圖。
FIG. 1 is a cross-sectional view of a configuration example of a
半導體雷射裝置100係具備:構成半導體雷射元件的半導體雷射晶片(以下簡稱為「晶片」)11和次級基板12。
The
晶片11係被固定在次級基板12,在被供給著所定之注入電流的情況下,會激發出雷射光L。該晶片11,係在半導體基板之主面,具備藉由磊晶成長而被形成的多層之半導體層的結構。次級基板12的本體部之材料,係考慮
放熱性、絕緣性、與晶片11之線膨脹係數差及成本等,而被適宜選擇。在次級基板12的表面,係藉由金(Au)而設置電極配線,晶片11係在該電極配線上,例如,透過金錫(AuSn)焊料而被接合。
The
被接合有晶片11的次級基板12係被固定在,圓盤狀的管座21所具有的散熱片部21a。此時,次級基板12,係以使得從晶片11所被射出之雷射光L的射出方向,會朝向與對管座21的圓盤狀之表面垂直之方向一致的方式,透過焊料而被接合在散熱片部21a。管座21係可藉由例如Fe合金所構成。此外,管座21係亦可為例如鍍金的鐵(Fe)及鍍金的銅(Cu)。散熱片部21a係可藉由例如銅(Cu)等的熱傳導佳的金屬所構成。
The
在管座21的圓盤狀之表面係被裝著有蓋罩31,藉由熔接等而被氣密密封。蓋罩31係具備:圓筒狀(圓環狀)的本體部31a、往本體部31a之內側面(內周面)突出的突起部31b、凸緣部31c。突起部31b係被設在,蓋罩31往管座21之固定側的相反側的端部附近。凸緣部31c係被設在,蓋罩31往管座21之固定側端部。該蓋罩31係可藉由例如切削加工而形成。
A
又,蓋罩31係由可塑性變形之材料所構成。例如,作為蓋罩31的材料係可使用不鏽鋼。此外,蓋罩31的材料係亦可為Fe-Ni、Fe-Ni-Co、Fe-Cr、Fe-Cr-Ni等的Fe系的合金材料,也可為Al系、Cu系的合金材料。但是,藉由熔接而將蓋罩31固定於管座21的情況下,蓋
罩31的材料是使用熱傳導率低的Fe系材料,較為理想。以熔接以外的方法(例如接著劑)而將蓋罩31予以固定的情況下,蓋罩31的材料係可為熱傳導率高的Al系材料或Cu系材料。
In addition, the
再者,在蓋罩31往管座21之固定側的相反側之端部,係被固定有透鏡32。該透鏡32係為,用來把從晶片11所射出之雷射光L以平行光的方式加以取出所需的光取出窗。透鏡32係為例如非球面透鏡,藉由抵接於突起部31b而決定其高度方向位置(從晶片11的發光點起算之距離)。
Furthermore, a
又,透鏡32係藉由蓋罩31的塑性變形,而被固定於蓋罩31。如圖2所示,透鏡32的直徑,係比蓋罩31的本體部31a的透鏡固定前的透鏡固定側的端部(圖2的上端部)的內徑還大。將透鏡32固定至蓋罩31之際,係將透鏡32放在本體部31a上,如箭頭A所示般地對透鏡32的外周部32a施加荷重,將透鏡32壓入至本體部31a。此時,如箭頭B所示,本體部31a的透鏡固定側端部的直徑係被擴大,透鏡32係被壓入至本體部31a直到抵接於突起部31b為止。如此,透鏡32係藉由壓入而被固定於蓋罩31。
In addition, the
在透鏡32被固定於蓋罩31的狀態下,如圖3的實線所示,蓋罩31的本體部31a的透鏡固定側之外徑R2,係比蓋罩31的本體部31a的管座固定側之外徑R3還大。又,蓋罩31的本體部31a的透鏡固定側之外徑R2,係比
蓋罩31的凸緣部31c之外徑R1還小。亦即,成立R1>R2>R3之關係。
In the state where the
又,透鏡32,係在被固定至蓋罩31前,亦可在表面鍍膜(AR鍍膜)有反射防止用的介電體多層膜。此時,反射防止膜係亦可被設置在透鏡32的光入射面及光射出面之雙方。作為反射防止膜而被使用的介電體係例如有:MgF2、CaF2、SiO2、Al2O3、Ta2O5、TiO2、ZrO2、Nb2O5等。作為反射防止膜的形成方法,係可使用真空蒸鍍法、離子協助蒸鍍法、離子束濺鍍法等。
In addition, before the
接著說明半導體雷射裝置100之製造方法。
Next, the manufacturing method of the
如圖4所示,首先將晶片11接合於次級基板12,將已被接合有晶片11的次級基板12,接合於管座21的散熱片部21a。接著,將晶片11與管座21上所被固定之電極22,以Au線24做電性接合(打線)。又,將次級基板12表面的電極配線與管座21上所被固定之電極23,以Au線25做電性接合(打線)。此外,電極22及23,係分別與管座21呈電性絕緣。
As shown in FIG. 4, first, the
又,將透鏡32的光入射面及光射出面進行AR鍍膜後,如上述的圖2所示,使蓋罩31之一端做塑性變形而將透鏡32固定於蓋罩31。然後,如圖5所示,在晶片11及次級基板12所被接合的管座21的圓盤狀之表面,裝著已被固定有透鏡32的蓋罩31,藉由熔接而予以氣密密封。
Furthermore, after AR coating the light incident surface and the light exit surface of the
首先,將蓋罩31藉由圓筒狀之蓋罩側密封電
極41進行磁性吸附(或真空吸附),並且將管座21藉由管座側密封電極42進行磁性吸附。接著,使蓋罩31的凸緣部31c的管座21的圓盤狀之表面所對向的面上所形成的凸起(突起部)31d與管座21接觸。亦即,藉由蓋罩側密封電極41與管座側密封電極42,將蓋罩31的凸緣部31c與管座21予以夾住。
First, the
然後,如圖6所示,使晶片11的發光點位置與透鏡32的中心位置呈一致,如圖中箭頭所示般地對蓋罩側密封電極41施加荷重。此時,在蓋罩側密封電極41與管座側密封電極42之間施加電壓,使電流集中在凸起31d而進行熔接。藉此,蓋罩31與透鏡32與管座21所區隔的空間,係成為氣密空間。該氣密空間的滲漏量,係為例如10-6〔Pa‧m3/sec〕以下,較為理想。
Then, as shown in FIG. 6, the position of the light-emitting point of the
藉由以上的工程,製造出半導體雷射裝置100。在該半導體雷射裝置100中,一旦在電極22與電極23之間施加所定之電壓,則從晶片11的端面會射出雷射光,該雷射光係穿透過透鏡32而放射。
Through the above process, the
此外,在上記的半導體雷射裝置100之製造方法中,是將已被固定有透鏡32之蓋罩31,接合於管座21。然而,半導體雷射裝置100之製造方法,係不限定於上記的方法。例如,亦可將蓋罩31接合於管座21後,對蓋罩31固定透鏡32。但是,為了提升晶片11的發光點位置與透鏡32的中心位置的定位精度,將已被固定有透鏡32之蓋罩31接合至管座21,較為理想。
In addition, in the manufacturing method of the
如以上所述,本實施形態中的的半導體雷射裝置100係具備:晶片11;和將晶片11予以固定的次級基板12;和將次級基板12予以固定的管座21;和被接合於管座21的由可塑性變形之材料所成之蓋罩31;和在蓋罩31的與管座21之相反側之端部,藉由該當蓋罩31的塑性變形而被固定的透鏡32。然後,晶片11及次級基板12係被密封在,由蓋罩31與透鏡32所構成的空間內。
As described above, the
如此,將透鏡32藉由蓋罩31的塑性變形而加以固定,因此透鏡32的固定時不必使用接著劑。因此,可防止製造過程或使用過程中因接著劑導致光射出面被污染。因此,可防止半導體雷射裝置100的光輸出之降低。
In this way, the
又,將透鏡32藉由蓋罩31的塑性變形而加以固定,可將預先設計成所望之規格的透鏡32,安裝至蓋罩31。因此,可提升透鏡32的曲率之設計自由度。再者,將透鏡32固定至蓋罩31之前,可進行AR鍍膜。亦即,無論蓋罩31的形狀為何,可將表面具有反射防止膜的透鏡32,固定於蓋罩31。因此,可實現光輸出效率高的半導體雷射裝置100。
Furthermore, the
又,已被固定有透鏡32之蓋罩31的形狀,係如圖3所示,成立R1>R2>R3之關係的形狀。因此,可適切地進行對管座21的密封熔接。在將蓋罩31與管座21接合時,如圖6所示,將圓筒狀之密封電極41裝著於蓋罩31,藉由加壓及通電而將蓋罩31的全周予以氣密密封。然後,將蓋罩31與管座21接合後,係將密封電極
41從蓋罩31拔下。在R2>R3的關係為成立的情況下,如圖6所示,蓋罩31的本體部31a的管座固定側的外周面與密封電極41的內周面之間,係形成有間隙。然後,該間隙,係相較於使用R2=R3之關係的蓋罩131的情況(圖7),是比較寬。
In addition, the shape of the
因此,使用R2>R3之蓋罩31的情況下,如圖8所示,管座固定側中的蓋罩31的本體部31a與密封電極41的接觸面積S1,係比使用圖9所示R2=R3之蓋罩131時的接觸面積S2還小。與密封電極41的接觸面積越大,熔接後,越難將密封電極41從蓋罩拔下。因此,如本實施形態般地將蓋罩31的形狀設成R2>R3,就可使熔接後的密封電極41容易從蓋罩31拔下,可適切地進行密封熔接。
Therefore, in the case of using the
又,本實施形態中的蓋罩31之形狀,係成立R1>R2之關係。因此,熔接時,可藉由圓筒狀之密封電極41而對蓋罩31的凸緣部31c適切地施加荷重。
In addition, the shape of the
再者,蓋罩31係具有,往本體部31a之內側面(內周面)突出的突起部31b。因此,藉由該突起部31b就可容易決定透鏡32的高度方向位置。因此,可將從晶片11的發光點至透鏡32的距離,設定成適切的距離。
Furthermore, the
又,由於是將透鏡32壓入至蓋罩31而固定,因此可為確保了氣密性之構成。如此,藉由蓋罩31、透鏡32及管座21而形成氣密空間,可將晶片11及次級基板12做氣密密封,因此可實現高品質的半導體雷射裝置100。
Moreover, since the
接著說明本發明的第二實施形態。 Next, the second embodiment of the present invention will be described.
在上述的第一實施形態中,雖然說明了將透鏡予以壓入而固定在蓋罩的情況,但在第二實施形態中,說明將透鏡予以歛縫固定在蓋罩的情況。 In the first embodiment described above, the case where the lens is press-fitted and fixed to the cover is described, but in the second embodiment, the case where the lens is fixed to the cover by caulking is described.
圖10係第二實施形態中的半導體雷射裝置110之構成例的剖面圖。於該圖10所示的半導體雷射裝置110中,具有和上述圖1所示半導體雷射裝置100相同構成的部分係標示和圖1相同的符號,以下以構成的不同部分為中心做說明。
FIG. 10 is a cross-sectional view of a configuration example of the
在蓋罩31往管座21之固定側的相反側之端部,係被固定有透鏡33。透鏡33係為例如非球面透鏡。透鏡33係藉由突起部31b而決定其高度方向位置(從晶片11的發光點起算之距離)。該透鏡33,係隔著環狀之間隔物34而藉由蓋罩31的塑性變形而被固定在蓋罩31。
A
如圖11所示,透鏡33的直徑,係比蓋罩31的本體部31a的透鏡固定前的透鏡固定側的端部(圖11的上端部)的內徑還小。將透鏡33固定至蓋罩31之際,係將透鏡33放在本體部31a內的突起部31b上,在透鏡33的外周面與本體部31a的內周面之間隙中,配置有厚度比該當間隙還薄的間隔物34。此處,間隔物34係由可塑性變形之材料所構成。然後,如箭頭A所示,將間隔物34予以加壓。如此一來,間隔物34係變形而被充填在透鏡
33與蓋罩31之間隙。間隔物34的加壓,係可使用環狀之模具等。又,此時如箭頭B所示,蓋罩31的透鏡固定側端部的直徑會變大,如圖3所示,成為R1>R2>R3之關係。如此,透鏡33係藉由歛縫固定而被固定在蓋罩31。
As shown in FIG. 11, the diameter of the
間隔物34係可使用例如鋁。此外,間隔物34所使用的材料,係只要是可塑性變形之材料即可,不限定於上記。但是,為了確保氣密性,使用硬度較低的Al系材料,較為理想。
For the
藉由以上的構成,和上述第一實施形態同樣地,可實現光輸出之降低的防止與透鏡曲率之設計自由度的提升。 With the above configuration, as in the first embodiment described above, it is possible to prevent the decrease in light output and increase the degree of freedom in lens curvature design.
接著說明本發明的第三實施形態。 Next, the third embodiment of the present invention will be described.
在上述第一及第二實施形態中,說明了在蓋罩31設置突起部31b的情況,但在第三實施形態中係說明,不設置突起部31b就將透鏡予以固定的情況。
In the first and second embodiments described above, the case where the
圖12係第三實施形態中的半導體雷射裝置120之構成例的剖面圖。於該圖12所示的半導體雷射裝置120中,具有和上述圖1所示半導體雷射裝置100相同構成的部分係標示和圖1相同的符號,以下以構成的不同部分為中心做說明。
FIG. 12 is a cross-sectional view of a configuration example of the
蓋罩35係具備:圓筒狀(圓環狀)的本體部35a、和被設在本體部35a之端部的凸緣部35b。凸緣部35b係被設在,蓋罩35往管座21之固定側端部。該蓋罩35係可藉
由例如沖壓加工而形成。又,蓋罩35係由可塑性變形之材料所構成。作為蓋罩35的材料,係可使用和上述的蓋罩31相同的材料。
The
在蓋罩35往管座21之固定側的相反側之端部,係被固定有透鏡36。透鏡36係為例如非球面透鏡。該透鏡36,係藉由蓋罩35的塑性變形而被固定在蓋罩35,在透鏡36已被固定之狀態下,蓋罩35的形狀,係和圖3所示的蓋罩31同樣地,成立R1>R2>R3之關係。
A
藉由以上的構成,和上述第一及第二實施形態同樣地,可實現光輸出之降低的防止與透鏡曲率之設計自由度的提升。又,在本實施形態中,蓋罩35係不像上述的蓋罩31般地具有往本體部31a之內側面突出的突起部31b,因此可藉由沖壓加工等而較為容易地製造,而較為廉價。
With the above configuration, as in the first and second embodiments described above, it is possible to prevent the decrease in light output and increase the degree of freedom in lens curvature design. Also, in this embodiment, the
此外,於上記各實施形態中,說明了藉由壓入、或歛縫固定而將透鏡固定在蓋罩的情況,但透鏡是只要藉由蓋罩的塑性變形而被固定即可,固定方法係不限定於上記。例如,亦可預先加熱蓋罩而使其熱膨脹,將與蓋罩的內徑同徑或其以下的透鏡配置在蓋罩的圓筒內部後,使蓋罩冷卻。此情況也是,蓋罩冷卻的結果,透鏡係藉由蓋罩的塑性變形而被固定。 In addition, in each of the above-mentioned embodiments, the case where the lens is fixed to the cover by press-fitting or caulking is described, but the lens only needs to be fixed by plastic deformation of the cover. The fixing method is Not limited to the above. For example, the cover may be heated in advance to thermally expand it, and a lens having the same diameter as or less than the inner diameter of the cover may be arranged inside the cylinder of the cover, and then the cover may be cooled. In this case, as a result of the cooling of the cover, the lens is fixed by plastic deformation of the cover.
又,固定在蓋罩的透鏡的形狀,係不限定於上述的形
狀。透鏡的形狀,係可使得來自晶片11的雷射光變成平行光、聚光、發散光等,隨著用途而可射出相應的光束形狀,且與蓋罩的接觸面(透鏡外周側面)上可以確保氣密性的形狀即可。
In addition, the shape of the lens fixed to the cover is not limited to the above-mentioned shape.
shape. The shape of the lens can make the laser light from the
11‧‧‧半導體雷射晶片(晶片) 11‧‧‧Semiconductor laser chip (chip)
12‧‧‧次級基板 12‧‧‧Secondary substrate
21‧‧‧管座 21‧‧‧Tube seat
21a‧‧‧散熱片部 21a‧‧‧Heat sink
31‧‧‧蓋罩 31‧‧‧Cover
31a‧‧‧本體部 31a‧‧‧Main body
31b‧‧‧突起部 31b‧‧‧Protrusion
31c‧‧‧凸緣部 31c‧‧‧Flange
32‧‧‧透鏡 32‧‧‧Lens
32a‧‧‧外周部 32a‧‧‧peripheral part
L‧‧‧雷射光 L‧‧‧Laser light
100‧‧‧半導體雷射裝置 100‧‧‧Semiconductor laser device
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TW201434171A (en) * | 2013-01-29 | 2014-09-01 | Panasonic Corp | Ultraviolet light emitting apparatus |
JP2015014803A (en) * | 2014-09-03 | 2015-01-22 | 日立マクセル株式会社 | Aspherical-lensed cap, manufacturing method therefor, and manufacturing method for light source module |
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WO2017134923A1 (en) | 2017-08-10 |
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