TWI698058B - Semiconductor laser device and manufacturing method thereof - Google Patents

Semiconductor laser device and manufacturing method thereof Download PDF

Info

Publication number
TWI698058B
TWI698058B TW105141439A TW105141439A TWI698058B TW I698058 B TWI698058 B TW I698058B TW 105141439 A TW105141439 A TW 105141439A TW 105141439 A TW105141439 A TW 105141439A TW I698058 B TWI698058 B TW I698058B
Authority
TW
Taiwan
Prior art keywords
lens
cover
semiconductor laser
preface
laser device
Prior art date
Application number
TW105141439A
Other languages
Chinese (zh)
Other versions
TW201740644A (en
Inventor
萩元将人
滝沢泰
宮本晋太郎
Original Assignee
日商牛尾電機股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商牛尾電機股份有限公司 filed Critical 日商牛尾電機股份有限公司
Publication of TW201740644A publication Critical patent/TW201740644A/en
Application granted granted Critical
Publication of TWI698058B publication Critical patent/TWI698058B/en

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

提供一種能夠實現透鏡曲率的設計自由度之提 升與光輸出降低之防止的半導體雷射裝置及其製造方法。 Provide a design freedom that can realize the curvature of the lens Semiconductor laser device and its manufacturing method for preventing increase and decrease of light output.

半導體雷射裝置(100)係具備：管座(21)； 和半導體雷射元件(半導體雷射晶片(11)、次級基板(12))，係被搭載於管座(21)，並射出雷射光(L)；和蓋罩(31)，係由可塑性變形之材料所構成，具有將半導體雷射元件予以包圍的筒狀之本體部(31a)，本體部(31a)之一端側係被接合於管座(21)；和透鏡(32)，係在蓋罩(31)的本體部(31a)之他端側，以塞住該當本體部(31a)之開口部的方式而被固定。透鏡(32)係藉由蓋罩(31)的本體部(31a)的塑性變形，而被固定在本體部(31a)。 The semiconductor laser device (100) is equipped with: a tube socket (21); And semiconductor laser components (semiconductor laser chip (11), secondary substrate (12)) are mounted on the tube base (21) and emit laser light (L); and the cover (31) is made of plastic Composed of deformed material, it has a cylindrical body part (31a) that surrounds the semiconductor laser element. One end of the body part (31a) is joined to the stem (21); and the lens (32) is attached to The other end side of the main body (31a) of the cover (31) is fixed in such a way as to plug the opening of the corresponding main body (31a). The lens (32) is fixed to the main body (31a) by plastic deformation of the main body (31a) of the cover (31).

Description

半導體雷射裝置及其製造方法 Semiconductor laser device and manufacturing method thereof

本發明係有關於半導體雷射裝置及其製造方法。 The invention relates to a semiconductor laser device and its manufacturing method.

先前，將半導體雷射晶片配置在金屬製的管座，使用設有雷射光之出射窗的蓋罩而做密封的罐封裝型的半導體雷射裝置，已為人知。於如此的半導體雷射裝置中，在圓筒狀之蓋罩的一端是使用，固定有作為雷射光之出射窗的透鏡的附透鏡之蓋罩。 Previously, semiconductor laser devices of the can package type in which a semiconductor laser chip is arranged on a metal tube socket and sealed with a cover provided with an exit window of the laser light have been known. In such a semiconductor laser device, one end of a cylindrical cover is used, and a lens with a lens as an exit window of the laser light is fixed.

作為將透鏡固定在蓋罩的方法，係有例如專利文獻1所記載的技術。該技術，係在蓋罩的開口部滴下熔融玻璃，藉由使其固化，而在蓋罩的開口部形成透鏡。又，專利文獻2中係揭露，係藉由接著劑而將透鏡固定在蓋罩的技術。 As a method of fixing the lens to the cover, for example, there is a technique described in Patent Document 1. In this technique, molten glass is dropped on the opening of the cover and solidified to form a lens in the opening of the cover. In addition, Patent Document 2 discloses a technique for fixing the lens to the cover by an adhesive.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開平05-121841號公報 [Patent Document 1] Japanese Patent Application Publication No. 05-121841

[專利文獻2]日本特開2015-041736號公報 [Patent Document 2] JP 2015-041736 A

如上記專利文獻1所記載的技術般地，將熔融玻璃做滴下固定之方法的情況下，透鏡的曲率，係由表面張力與玻璃材的自重而被決定。因此，無法自由設計透鏡的曲率。又，在該方法下，在設計成表面具有反射防止膜之透鏡的情況下，則是將透鏡形成在蓋罩後進行鍍膜處理，但會因為蓋罩的形狀而使上記鍍膜處理變得困難。 As in the technique described in Patent Document 1 above, when the molten glass is dropped and fixed, the curvature of the lens is determined by the surface tension and the weight of the glass material. Therefore, the curvature of the lens cannot be freely designed. In addition, in this method, when designing a lens with an anti-reflection coating on the surface, the lens is formed on the cover and then coated. However, the above-mentioned coating treatment becomes difficult due to the shape of the cover.

又，如上記專利文獻2所記載之技術，將透鏡藉由接著劑而加以固定之方法的情況下，於製造過程中，透鏡的透光部分可能會被接著劑附著，導致光輸出降低。甚至，在蓋罩內被反射的迷光等會照射至接著劑，導致接著劑中所含有的揮發成分等會往透鏡面蒸鍍，污染光出射面而也可能導致光輸出降低的問題。 In addition, in the technique described in Patent Document 2 above, in the case of the method of fixing the lens with an adhesive, during the manufacturing process, the light-transmitting part of the lens may be adhered by the adhesive, resulting in a decrease in light output. Furthermore, the stray light reflected in the cover may irradiate the adhesive, causing the volatile components contained in the adhesive to vaporize on the lens surface, contaminating the light exit surface, and possibly causing the problem of reduced light output.

於是，本發明的課題在於，提供一種能夠實現透鏡曲率之設計自由度之提升與光輸出降低之防止的半導體雷射裝置及其製造方法。 Therefore, the subject of the present invention is to provide a semiconductor laser device and a manufacturing method thereof that can achieve an increase in the design freedom of the lens curvature and prevention of a decrease in light output.

為了解決上記課題，本發明所述之半導體雷射裝置的一態樣係具備：管座；和半導體雷射元件，係被搭載於前記管座，並射出雷射光；和蓋罩，係由可塑性變 形之材料所構成，具有將前記半導體雷射元件予以包圍的筒狀之本體部，前記本體部之一端側係被接合於前記管座；和透鏡，係在前記蓋罩的前記本體部之他端側，以塞住該當本體部之開口部的方式而被固定；前記透鏡，係藉由前記蓋罩的前記本體部的塑性變形，而被固定在該當本體部。 In order to solve the above problems, one aspect of the semiconductor laser device of the present invention includes: a tube base; and a semiconductor laser element, which is mounted on the front tube base and emits laser light; and a cover, which is made of plastic change It has a cylindrical body part that surrounds the semiconductor laser element of the shape, and one end side of the body part is joined to the tube holder; and the lens is attached to the body part of the preface cover. The end side is fixed in such a way as to plug the opening of the corresponding main body part; the front lens is fixed to the current main body by plastic deformation of the front body part of the front cover.

如此，將透鏡藉由蓋罩的塑性變形而加以固定，因此可提升透鏡的曲率之設計自由度。又，在透鏡的固定之際，不需要使用接著劑。因此，可防止接著劑所致之透鏡的污染，可防止半導體雷射裝置的光輸出之降低。 In this way, the lens is fixed by the plastic deformation of the cover, so that the design freedom of the curvature of the lens can be improved. In addition, it is not necessary to use an adhesive when fixing the lens. Therefore, the contamination of the lens caused by the adhesive can be prevented, and the decrease of the light output of the semiconductor laser device can be prevented.

又，於上記的半導體雷射裝置中，亦可為，前記本體部的前記他端側之外徑，係大於前記一端側之外徑。此情況下，將筒狀之密封電極裝著於蓋罩然後加壓、通電以使蓋罩與管座熔接時，較容易把密封電極從蓋罩拔下。因此，可適切地接合蓋罩與管座。 In addition, in the above-mentioned semiconductor laser device, it is also possible that the outer diameter of the other end side of the aforementioned main body part is greater than the outer diameter of the aforementioned one end side. In this case, when the cylindrical sealed electrode is mounted on the cover and then pressurized and energized to weld the cover to the base, it is easier to remove the sealed electrode from the cover. Therefore, the cover and the socket can be properly joined.

再者，於上記的半導體雷射裝置中，亦可為，前記蓋罩係具有：往前記本體部之內側面突出的突起部。此情況下，藉由突起部而可容易決定透鏡的高度方向位置。因此，可將從半導體雷射元件的發光點至透鏡的距離，設定成適切的距離。 Furthermore, in the above-mentioned semiconductor laser device, the front cover may have a protrusion that protrudes from the inner surface of the front body. In this case, the height direction position of the lens can be easily determined by the protrusion. Therefore, the distance from the light-emitting point of the semiconductor laser element to the lens can be set to an appropriate distance.

又，於上記的半導體雷射裝置中，亦可為，前記半導體雷射元件，係藉由前記蓋罩、前記透鏡及前記管座而被氣密密封。藉此，可實現高品質的半導體雷射裝置。 In addition, in the above-mentioned semiconductor laser device, the pre-semiconductor laser element may be hermetically sealed by the pre-scheduled cover, the pre-sent lens, and the pre-stake holder. In this way, a high-quality semiconductor laser device can be realized.

再者，於上記的半導體雷射裝置中，亦可為，前記透鏡係在其表面具有反射防止膜。藉此，可提升光輸出效率。 Furthermore, in the above-mentioned semiconductor laser device, the aforementioned lens system may have an anti-reflection film on its surface. In this way, the light output efficiency can be improved.

又，於上記的半導體雷射裝置中，亦可還具備：被配置在前記蓋罩的前記本體部與前記透鏡之間的環狀之間隔物。此情況下，可將透鏡藉由歛縫而固定於蓋罩。 In addition, the above-mentioned semiconductor laser device may further include a ring-shaped spacer arranged between the pre-recording body portion of the pre-recording cover and the pre-recording lens. In this case, the lens can be fixed to the cover by caulking.

再者，本發明所述之半導體雷射裝置的一態樣係具備：管座；和半導體雷射元件，係被搭載於前記管座，並射出雷射光；和蓋罩，係具有將前記半導體雷射元件予以包圍的筒狀之本體部，前記本體部之一端側係被接合於前記管座；和透鏡，係在前記蓋罩的前記本體部之他端側，以塞住該當本體部之開口部的方式而被固定；前記本體部的前記他端側之外徑，係大於前記一端側之外徑。 Furthermore, one aspect of the semiconductor laser device according to the present invention is provided with: a tube base; and a semiconductor laser element, which is mounted on the pre-marked tube base and emits laser light; and a cover, which has the pre-marked semiconductor In the cylindrical body part surrounded by the laser element, one end of the preface body part is joined to the preface tube holder; and the lens is attached to the other end side of the preface body part of the preface cover to plug the other end of the body part. It is fixed by means of an opening; the outside diameter of the other end of the main body of the preceding note is greater than the outside diameter of the one end of the preceding note.

又再者，本發明所述之半導體雷射裝置之製造方法的一態樣係包含：將半導體雷射元件固定於管座之工程；和使由可塑性變形之材料所構成的筒狀之本體部的一端做塑性變形，以塞住前記本體部之開口部的方式，固定透鏡之工程；和將前記蓋罩的前記本體部之他端側接合於前記管座之工程。 Furthermore, an aspect of the manufacturing method of the semiconductor laser device of the present invention includes: a process of fixing the semiconductor laser element to the base; and making a cylindrical body part made of plastically deformable material Plastic deformation at one end to plug the opening of the preface body part to fix the lens; and the process of joining the other end side of the preface body part of the preface cover to the preface tube seat.

如此，將透鏡藉由蓋罩的塑性變形而加以固定，因此可提升透鏡的曲率之設計自由度。又，在透鏡的固定之際，不需要使用接著劑。因此，可防止接著劑所致之透鏡的污染，可防止半導體雷射裝置的光輸出之降低。 In this way, the lens is fixed by the plastic deformation of the cover, so that the design freedom of the curvature of the lens can be improved. In addition, it is not necessary to use an adhesive when fixing the lens. Therefore, the contamination of the lens caused by the adhesive can be prevented, and the decrease of the light output of the semiconductor laser device can be prevented.

又，於上記的半導體雷射裝置之製造方法 中，將前記透鏡予以固定之工程係亦可包含；將前記透鏡***至前記本體部的前記開口部之工程；和在前記本體部與前記透鏡之間***環狀之間隔物之工程；和使前記間隔物做塑性變形之工程。此情況下，可將透鏡藉由歛縫而適切地固定於蓋罩。 Also, the manufacturing method of the semiconductor laser device mentioned above In, the engineering system for fixing the preface lens may also include; the process of inserting the preface lens into the preface opening of the preface body; and the process of inserting a ring-shaped spacer between the preface body and the preface lens; and The aforementioned spacer is plastically deformed. In this case, the lens can be appropriately fixed to the cover by caulking.

再者，於上記的半導體雷射裝置之製造方法中，亦可在將前記透鏡予以固定之工程之前，還包含：在前記透鏡的表面形成反射防止膜之工程。此情況下，可實現光輸出效率高的半導體雷射裝置。 Furthermore, in the above-mentioned method of manufacturing a semiconductor laser device, before the process of fixing the foregoing lens, the process of forming an anti-reflection film on the surface of the foregoing lens may also be included. In this case, a semiconductor laser device with high light output efficiency can be realized.

若依據本發明的半導體雷射裝置，則將半導體雷射晶片及次級基板予以密封的蓋罩上所被固定的透鏡的曲率之設計自由度，可被提升。又，可防止製造過程或使用過程中的透鏡之污染，可實現半導體雷射裝置的光輸出降低之防止。 According to the semiconductor laser device of the present invention, the design freedom of the curvature of the lens fixed on the cover that seals the semiconductor laser chip and the secondary substrate can be improved. In addition, it can prevent the contamination of the lens during the manufacturing process or the use process, and can prevent the reduction of the light output of the semiconductor laser device.

11‧‧‧半導體雷射晶片(晶片) 11‧‧‧Semiconductor laser chip (chip)

12‧‧‧次級基板 12‧‧‧Secondary substrate

21‧‧‧管座 21‧‧‧Tube seat

21a‧‧‧散熱片部 21a‧‧‧Heat sink

31‧‧‧蓋罩 31‧‧‧Cover

31a‧‧‧本體部 31a‧‧‧Main body

31b‧‧‧突起部 31b‧‧‧Protrusion

31c‧‧‧凸緣部 31c‧‧‧Flange

31d‧‧‧凸起 31d‧‧‧Protrusion

32‧‧‧透鏡 32‧‧‧Lens

33‧‧‧透鏡 33‧‧‧Lens

34‧‧‧間隔物 34‧‧‧Spacer

35‧‧‧蓋罩 35‧‧‧Cover

36‧‧‧透鏡 36‧‧‧Lens

41‧‧‧蓋罩側密封電極 41‧‧‧Seal electrode on cover side

42‧‧‧管座側密封電極 42‧‧‧Seal electrode on tube seat side

100,110,120‧‧‧半導體雷射裝置 100,110,120‧‧‧Semiconductor laser device

[圖1]第一實施形態中的半導體雷射裝置之構成例的剖面圖。 [Fig. 1] A cross-sectional view of a configuration example of the semiconductor laser device in the first embodiment.

[圖2]透鏡之固定方法的說明圖。 [Figure 2] An explanatory diagram of the lens fixing method.

[圖3]透鏡固定後的蓋罩的圖示。 [Fig. 3] An illustration of the cover after the lens is fixed.

[圖4]半導體雷射裝置之製造工程的說明圖。 [Figure 4] An explanatory diagram of the manufacturing process of the semiconductor laser device.

[圖5]半導體雷射裝置之製造工程的說明圖。 [Figure 5] An explanatory diagram of the manufacturing process of the semiconductor laser device.

[圖6]半導體雷射裝置之製造工程的說明圖。 [Figure 6] An explanatory diagram of the manufacturing process of the semiconductor laser device.

[圖7]熔接後的蓋罩之形狀的圖示。 [Figure 7] An illustration of the shape of the cover after welding.

[圖8]先前的半導體雷射裝置之製造工程的說明圖。 [Fig. 8] An explanatory diagram of the manufacturing process of the conventional semiconductor laser device.

[圖9]先前的熔接後的蓋罩之形狀的圖示。 [Fig. 9] An illustration of the shape of the cover after welding.

[圖10]第二實施形態中的半導體雷射裝置之構成例的剖面圖。 [Fig. 10] A cross-sectional view of a configuration example of the semiconductor laser device in the second embodiment.

[圖11]第二實施形態的透鏡之固定方法的說明圖。 [Fig. 11] An explanatory diagram of the lens fixing method of the second embodiment.

[圖12]第三實施形態中的半導體雷射裝置之構成例的剖面圖。 [Fig. 12] A cross-sectional view of a configuration example of the semiconductor laser device in the third embodiment.

以下，根據圖式來說明本發明的實施形態。 Hereinafter, an embodiment of the present invention will be described based on the drawings.

(第一實施形態) (First Embodiment)

圖1係本實施形態中的半導體雷射裝置100之構成例的剖面圖。 FIG. 1 is a cross-sectional view of a configuration example of a semiconductor laser device 100 in this embodiment.

半導體雷射裝置100係具備：構成半導體雷射元件的半導體雷射晶片(以下簡稱為「晶片」)11和次級基板12。 The semiconductor laser device 100 includes a semiconductor laser chip (hereinafter referred to as a “chip”) 11 and a secondary substrate 12 constituting a semiconductor laser element.

晶片11係被固定在次級基板12，在被供給著所定之注入電流的情況下，會激發出雷射光L。該晶片11，係在半導體基板之主面，具備藉由磊晶成長而被形成的多層之半導體層的結構。次級基板12的本體部之材料，係考慮 放熱性、絕緣性、與晶片11之線膨脹係數差及成本等，而被適宜選擇。在次級基板12的表面，係藉由金(Au)而設置電極配線，晶片11係在該電極配線上，例如，透過金錫(AuSn)焊料而被接合。 The wafer 11 is fixed to the secondary substrate 12, and when a predetermined injection current is supplied, the laser light L is excited. The wafer 11 is on the main surface of a semiconductor substrate, and has a structure of multiple semiconductor layers formed by epitaxial growth. The material of the main body of the secondary substrate 12 is considered Heat dissipation, insulation, coefficient of linear expansion difference with the wafer 11, cost, etc., are appropriately selected. On the surface of the secondary substrate 12, electrode wiring is provided by gold (Au), and the wafer 11 is connected to the electrode wiring by, for example, gold-tin (AuSn) solder.

被接合有晶片11的次級基板12係被固定在，圓盤狀的管座21所具有的散熱片部21a。此時，次級基板12，係以使得從晶片11所被射出之雷射光L的射出方向，會朝向與對管座21的圓盤狀之表面垂直之方向一致的方式，透過焊料而被接合在散熱片部21a。管座21係可藉由例如Fe合金所構成。此外，管座21係亦可為例如鍍金的鐵(Fe)及鍍金的銅(Cu)。散熱片部21a係可藉由例如銅(Cu)等的熱傳導佳的金屬所構成。 The secondary substrate 12 to which the wafer 11 is bonded is fixed to the heat sink portion 21 a of the disk-shaped stem 21. At this time, the secondary substrate 12 is joined through solder so that the direction of the laser light L emitted from the chip 11 is aligned with the direction perpendicular to the disk-shaped surface of the stem 21 In the fin portion 21a. The base 21 can be made of, for example, Fe alloy. In addition, the base 21 may be, for example, gold-plated iron (Fe) and gold-plated copper (Cu). The heat sink portion 21a can be made of a metal with good thermal conductivity such as copper (Cu).

在管座21的圓盤狀之表面係被裝著有蓋罩31，藉由熔接等而被氣密密封。蓋罩31係具備：圓筒狀(圓環狀)的本體部31a、往本體部31a之內側面(內周面)突出的突起部31b、凸緣部31c。突起部31b係被設在，蓋罩31往管座21之固定側的相反側的端部附近。凸緣部31c係被設在，蓋罩31往管座21之固定側端部。該蓋罩31係可藉由例如切削加工而形成。 A cover 31 is attached to the disc-shaped surface of the tube base 21 and is hermetically sealed by welding or the like. The cover 31 includes a cylindrical (annular) body portion 31a, a protrusion portion 31b that protrudes toward the inner surface (inner peripheral surface) of the body portion 31a, and a flange portion 31c. The protrusion 31b is provided in the vicinity of the end of the cover 31 on the side opposite to the fixed side of the socket 21. The flange portion 31c is provided at the end of the cover 31 toward the fixed side of the socket 21. The cover 31 can be formed by cutting, for example.

又，蓋罩31係由可塑性變形之材料所構成。例如，作為蓋罩31的材料係可使用不鏽鋼。此外，蓋罩31的材料係亦可為Fe-Ni、Fe-Ni-Co、Fe-Cr、Fe-Cr-Ni等的Fe系的合金材料，也可為Al系、Cu系的合金材料。但是，藉由熔接而將蓋罩31固定於管座21的情況下，蓋 罩31的材料是使用熱傳導率低的Fe系材料，較為理想。以熔接以外的方法(例如接著劑)而將蓋罩31予以固定的情況下，蓋罩31的材料係可為熱傳導率高的Al系材料或Cu系材料。 In addition, the cover 31 is made of a plastically deformable material. For example, as the material of the cover 31, stainless steel can be used. In addition, the material system of the cover 31 may be an Fe-based alloy material such as Fe-Ni, Fe-Ni-Co, Fe-Cr, and Fe-Cr-Ni, or an Al-based or Cu-based alloy material. However, when the cover 31 is fixed to the socket 21 by welding, the cover The material of the cover 31 is preferably an Fe-based material with low thermal conductivity. When the cover 31 is fixed by a method other than welding (for example, an adhesive), the material of the cover 31 may be an Al-based material or a Cu-based material with high thermal conductivity.

再者，在蓋罩31往管座21之固定側的相反側之端部，係被固定有透鏡32。該透鏡32係為，用來把從晶片11所射出之雷射光L以平行光的方式加以取出所需的光取出窗。透鏡32係為例如非球面透鏡，藉由抵接於突起部31b而決定其高度方向位置(從晶片11的發光點起算之距離)。 Furthermore, a lens 32 is fixed to the end of the cover 31 on the opposite side to the fixing side of the socket 21. The lens 32 is a light extraction window for extracting the laser light L emitted from the wafer 11 in parallel light. The lens 32 is, for example, an aspheric lens, and its height direction position (distance from the light-emitting point of the wafer 11) is determined by abutting on the protrusion 31b.

又，透鏡32係藉由蓋罩31的塑性變形，而被固定於蓋罩31。如圖2所示，透鏡32的直徑，係比蓋罩31的本體部31a的透鏡固定前的透鏡固定側的端部(圖2的上端部)的內徑還大。將透鏡32固定至蓋罩31之際，係將透鏡32放在本體部31a上，如箭頭A所示般地對透鏡32的外周部32a施加荷重，將透鏡32壓入至本體部31a。此時，如箭頭B所示，本體部31a的透鏡固定側端部的直徑係被擴大，透鏡32係被壓入至本體部31a直到抵接於突起部31b為止。如此，透鏡32係藉由壓入而被固定於蓋罩31。 In addition, the lens 32 is fixed to the cover 31 by plastic deformation of the cover 31. As shown in FIG. 2, the diameter of the lens 32 is larger than the inner diameter of the end (upper end of FIG. 2) on the lens fixing side of the body portion 31a of the cover 31 before the lens is fixed. When fixing the lens 32 to the cover 31, the lens 32 is placed on the main body portion 31a, a load is applied to the outer peripheral portion 32a of the lens 32 as indicated by arrow A, and the lens 32 is pressed into the main body portion 31a. At this time, as indicated by arrow B, the diameter of the lens fixing side end of the main body portion 31a is enlarged, and the lens 32 is pressed into the main body portion 31a until it abuts against the protrusion 31b. In this way, the lens 32 is fixed to the cover 31 by press-fitting.

在透鏡32被固定於蓋罩31的狀態下，如圖3的實線所示，蓋罩31的本體部31a的透鏡固定側之外徑R2，係比蓋罩31的本體部31a的管座固定側之外徑R3還大。又，蓋罩31的本體部31a的透鏡固定側之外徑R2，係比 蓋罩31的凸緣部31c之外徑R1還小。亦即，成立R1>R2>R3之關係。 In the state where the lens 32 is fixed to the cover 31, as shown by the solid line in FIG. 3, the outer diameter R2 of the lens fixing side of the main body portion 31a of the cover 31 is larger than the tube seat of the main body portion 31a of the cover 31 The outer diameter R3 of the fixed side is still large. In addition, the outer diameter R2 of the lens fixing side of the body portion 31a of the cover 31 is greater than The outer diameter R1 of the flange portion 31c of the cover 31 is still small. That is, the relationship of R1>R2>R3 is established.

又，透鏡32，係在被固定至蓋罩31前，亦可在表面鍍膜(AR鍍膜)有反射防止用的介電體多層膜。此時，反射防止膜係亦可被設置在透鏡32的光入射面及光射出面之雙方。作為反射防止膜而被使用的介電體係例如有：MgF2、CaF2、SiO2、Al2O3、Ta2O5、TiO2、ZrO2、Nb2O5等。作為反射防止膜的形成方法，係可使用真空蒸鍍法、離子協助蒸鍍法、離子束濺鍍法等。 In addition, before the lens 32 is fixed to the cover 31, a dielectric multilayer film for preventing reflection may be coated (AR coating) on the surface. At this time, the anti-reflection film may be provided on both the light incident surface and the light exit surface of the lens 32. The dielectric system used as the anti-reflection film includes, for example, MgF 2 , CaF 2 , SiO 2 , Al 2 O 3 , Ta 2 O 5 , TiO 2 , ZrO 2 , Nb 2 O 5 and the like. As a method for forming the antireflection film, a vacuum vapor deposition method, an ion assisted vapor deposition method, an ion beam sputtering method, etc. can be used.

接著說明半導體雷射裝置100之製造方法。 Next, the manufacturing method of the semiconductor laser device 100 will be described.

如圖4所示，首先將晶片11接合於次級基板12，將已被接合有晶片11的次級基板12，接合於管座21的散熱片部21a。接著，將晶片11與管座21上所被固定之電極22，以Au線24做電性接合(打線)。又，將次級基板12表面的電極配線與管座21上所被固定之電極23，以Au線25做電性接合(打線)。此外，電極22及23，係分別與管座21呈電性絕緣。 As shown in FIG. 4, first, the wafer 11 is bonded to the secondary substrate 12, and the secondary substrate 12 to which the wafer 11 has been bonded is bonded to the heat sink portion 21 a of the stem 21. Then, the wafer 11 and the electrode 22 fixed on the stem 21 are electrically bonded (wired) with the Au wire 24. In addition, the electrode wiring on the surface of the secondary substrate 12 and the electrode 23 fixed on the stem 21 are electrically bonded (wired) with the Au wire 25. In addition, the electrodes 22 and 23 are electrically insulated from the base 21, respectively.

又，將透鏡32的光入射面及光射出面進行AR鍍膜後，如上述的圖2所示，使蓋罩31之一端做塑性變形而將透鏡32固定於蓋罩31。然後，如圖5所示，在晶片11及次級基板12所被接合的管座21的圓盤狀之表面，裝著已被固定有透鏡32的蓋罩31，藉由熔接而予以氣密密封。 Furthermore, after AR coating the light incident surface and the light exit surface of the lens 32, as shown in FIG. 2 described above, one end of the cover 31 is plastically deformed to fix the lens 32 to the cover 31. Then, as shown in FIG. 5, on the disc-shaped surface of the tube holder 21 where the wafer 11 and the secondary substrate 12 are joined, the cover 31 to which the lens 32 has been fixed is mounted, and it is airtight by welding. seal.

首先，將蓋罩31藉由圓筒狀之蓋罩側密封電 極41進行磁性吸附(或真空吸附)，並且將管座21藉由管座側密封電極42進行磁性吸附。接著，使蓋罩31的凸緣部31c的管座21的圓盤狀之表面所對向的面上所形成的凸起(突起部)31d與管座21接觸。亦即，藉由蓋罩側密封電極41與管座側密封電極42，將蓋罩31的凸緣部31c與管座21予以夾住。 First, the cover 31 is sealed by the cylindrical cover side. The pole 41 performs magnetic adsorption (or vacuum adsorption), and the tube socket 21 is magnetically attracted by the tube socket side sealing electrode 42. Next, the protrusion (protrusion) 31 d formed on the surface of the flange portion 31 c of the cap 31 facing the disc-shaped surface of the socket 21 is brought into contact with the socket 21. That is, the flange portion 31c of the cover 31 and the socket 21 are sandwiched by the cover-side sealing electrode 41 and the socket-side sealing electrode 42.

然後，如圖6所示，使晶片11的發光點位置與透鏡32的中心位置呈一致，如圖中箭頭所示般地對蓋罩側密封電極41施加荷重。此時，在蓋罩側密封電極41與管座側密封電極42之間施加電壓，使電流集中在凸起31d而進行熔接。藉此，蓋罩31與透鏡32與管座21所區隔的空間，係成為氣密空間。該氣密空間的滲漏量，係為例如10-6〔Pa‧m3/sec〕以下，較為理想。 Then, as shown in FIG. 6, the position of the light-emitting point of the wafer 11 is aligned with the center position of the lens 32, and a load is applied to the cover-side sealing electrode 41 as indicated by the arrow in the figure. At this time, a voltage is applied between the cover-side sealing electrode 41 and the socket-side sealing electrode 42 to concentrate the current on the protrusion 31d to perform welding. Thereby, the space separated by the cover 31 and the lens 32 and the tube base 21 becomes an airtight space. The leakage amount of the airtight space is preferably 10 -6 [Pa‧m 3 /sec] or less, for example.

藉由以上的工程，製造出半導體雷射裝置100。在該半導體雷射裝置100中，一旦在電極22與電極23之間施加所定之電壓，則從晶片11的端面會射出雷射光，該雷射光係穿透過透鏡32而放射。 Through the above process, the semiconductor laser device 100 is manufactured. In the semiconductor laser device 100, when a predetermined voltage is applied between the electrode 22 and the electrode 23, laser light is emitted from the end surface of the wafer 11, and the laser light is emitted through the lens 32.

此外，在上記的半導體雷射裝置100之製造方法中，是將已被固定有透鏡32之蓋罩31，接合於管座21。然而，半導體雷射裝置100之製造方法，係不限定於上記的方法。例如，亦可將蓋罩31接合於管座21後，對蓋罩31固定透鏡32。但是，為了提升晶片11的發光點位置與透鏡32的中心位置的定位精度，將已被固定有透鏡32之蓋罩31接合至管座21，較為理想。 In addition, in the manufacturing method of the semiconductor laser device 100 described above, the cover 31 to which the lens 32 has been fixed is bonded to the stem 21. However, the manufacturing method of the semiconductor laser device 100 is not limited to the above-mentioned method. For example, after the cover 31 is joined to the base 21, the lens 32 may be fixed to the cover 31. However, in order to improve the positioning accuracy of the position of the light-emitting point of the wafer 11 and the center position of the lens 32, it is preferable to join the cover 31 to which the lens 32 has been fixed to the stem 21.

如以上所述，本實施形態中的的半導體雷射裝置100係具備：晶片11；和將晶片11予以固定的次級基板12；和將次級基板12予以固定的管座21；和被接合於管座21的由可塑性變形之材料所成之蓋罩31；和在蓋罩31的與管座21之相反側之端部，藉由該當蓋罩31的塑性變形而被固定的透鏡32。然後，晶片11及次級基板12係被密封在，由蓋罩31與透鏡32所構成的空間內。 As described above, the semiconductor laser device 100 in this embodiment includes: the wafer 11; and the secondary substrate 12 to which the wafer 11 is fixed; and the stem 21 to which the secondary substrate 12 is fixed; A cover 31 made of a plastically deformable material on the base 21; and a lens 32 at the end of the cover 31 opposite to the base 21 by the plastic deformation of the cover 31. Then, the wafer 11 and the secondary substrate 12 are sealed in the space formed by the cover 31 and the lens 32.

如此，將透鏡32藉由蓋罩31的塑性變形而加以固定，因此透鏡32的固定時不必使用接著劑。因此，可防止製造過程或使用過程中因接著劑導致光射出面被污染。因此，可防止半導體雷射裝置100的光輸出之降低。 In this way, the lens 32 is fixed by the plastic deformation of the cover 31, so it is not necessary to use an adhesive when fixing the lens 32. Therefore, it is possible to prevent the light exit surface from being contaminated by the adhesive during the manufacturing process or the use process. Therefore, the decrease in the light output of the semiconductor laser device 100 can be prevented.

又，將透鏡32藉由蓋罩31的塑性變形而加以固定，可將預先設計成所望之規格的透鏡32，安裝至蓋罩31。因此，可提升透鏡32的曲率之設計自由度。再者，將透鏡32固定至蓋罩31之前，可進行AR鍍膜。亦即，無論蓋罩31的形狀為何，可將表面具有反射防止膜的透鏡32，固定於蓋罩31。因此，可實現光輸出效率高的半導體雷射裝置100。 Furthermore, the lens 32 is fixed by plastic deformation of the cover 31, and the lens 32 designed in advance to a desired specification can be attached to the cover 31. Therefore, the design freedom of the curvature of the lens 32 can be improved. Furthermore, before fixing the lens 32 to the cover 31, AR coating may be performed. That is, regardless of the shape of the cover 31, the lens 32 having the anti-reflection film on the surface can be fixed to the cover 31. Therefore, a semiconductor laser device 100 with high light output efficiency can be realized.

又，已被固定有透鏡32之蓋罩31的形狀，係如圖3所示，成立R1>R2>R3之關係的形狀。因此，可適切地進行對管座21的密封熔接。在將蓋罩31與管座21接合時，如圖6所示，將圓筒狀之密封電極41裝著於蓋罩31，藉由加壓及通電而將蓋罩31的全周予以氣密密封。然後，將蓋罩31與管座21接合後，係將密封電極 41從蓋罩31拔下。在R2>R3的關係為成立的情況下，如圖6所示，蓋罩31的本體部31a的管座固定側的外周面與密封電極41的內周面之間，係形成有間隙。然後，該間隙，係相較於使用R2=R3之關係的蓋罩131的情況(圖7)，是比較寬。 In addition, the shape of the cover 31 to which the lens 32 has been fixed is a shape that establishes the relationship R1>R2>R3 as shown in FIG. Therefore, the seal welding to the socket 21 can be appropriately performed. When the cover 31 is joined to the base 21, as shown in FIG. 6, a cylindrical sealing electrode 41 is mounted on the cover 31, and the entire circumference of the cover 31 is airtightly sealed by pressurizing and energizing. seal. Then, after the cap 31 is joined to the base 21, the sealed electrode 41 is removed from the cover 31. When the relationship of R2>R3 is established, as shown in FIG. 6, a gap is formed between the outer peripheral surface of the main body portion 31a of the cover 31 on the socket fixing side and the inner peripheral surface of the sealing electrode 41. Then, the gap is wider than the case of using the cover 131 with the relationship of R2=R3 (FIG. 7).

因此，使用R2>R3之蓋罩31的情況下，如圖8所示，管座固定側中的蓋罩31的本體部31a與密封電極41的接觸面積S1，係比使用圖9所示R2=R3之蓋罩131時的接觸面積S2還小。與密封電極41的接觸面積越大，熔接後，越難將密封電極41從蓋罩拔下。因此，如本實施形態般地將蓋罩31的形狀設成R2>R3，就可使熔接後的密封電極41容易從蓋罩31拔下，可適切地進行密封熔接。 Therefore, in the case of using the cover 31 with R2>R3, as shown in FIG. 8, the contact area S1 between the body portion 31a of the cover 31 on the fixed side of the socket and the sealing electrode 41 is higher than that shown in FIG. = The contact area S2 when the cover 131 is R3 is still small. The larger the contact area with the sealing electrode 41, the more difficult it is to remove the sealing electrode 41 from the cover after welding. Therefore, by setting the shape of the cover 31 to R2>R3 as in the present embodiment, the sealed electrode 41 after welding can be easily removed from the cover 31, and sealing welding can be performed appropriately.

又，本實施形態中的蓋罩31之形狀，係成立R1>R2之關係。因此，熔接時，可藉由圓筒狀之密封電極41而對蓋罩31的凸緣部31c適切地施加荷重。 In addition, the shape of the cover 31 in this embodiment has a relationship of R1>R2. Therefore, at the time of welding, it is possible to appropriately apply a load to the flange portion 31c of the cover 31 by the cylindrical sealing electrode 41.

再者，蓋罩31係具有，往本體部31a之內側面(內周面)突出的突起部31b。因此，藉由該突起部31b就可容易決定透鏡32的高度方向位置。因此，可將從晶片11的發光點至透鏡32的距離，設定成適切的距離。 Furthermore, the cover 31 has a protrusion 31b protruding to the inner surface (inner peripheral surface) of the main body 31a. Therefore, the height direction position of the lens 32 can be easily determined by the protrusion 31b. Therefore, the distance from the light-emitting point of the wafer 11 to the lens 32 can be set to an appropriate distance.

又，由於是將透鏡32壓入至蓋罩31而固定，因此可為確保了氣密性之構成。如此，藉由蓋罩31、透鏡32及管座21而形成氣密空間，可將晶片11及次級基板12做氣密密封，因此可實現高品質的半導體雷射裝置100。 Moreover, since the lens 32 is press-fitted into the cover 31 and fixed, it can be a structure which ensures airtightness. In this way, an airtight space is formed by the cover 31, the lens 32, and the stem 21, and the chip 11 and the secondary substrate 12 can be hermetically sealed, so that a high-quality semiconductor laser device 100 can be realized.

(第二實施形態) (Second Embodiment)

接著說明本發明的第二實施形態。 Next, the second embodiment of the present invention will be described.

在上述的第一實施形態中，雖然說明了將透鏡予以壓入而固定在蓋罩的情況，但在第二實施形態中，說明將透鏡予以歛縫固定在蓋罩的情況。 In the first embodiment described above, the case where the lens is press-fitted and fixed to the cover is described, but in the second embodiment, the case where the lens is fixed to the cover by caulking is described.

圖10係第二實施形態中的半導體雷射裝置110之構成例的剖面圖。於該圖10所示的半導體雷射裝置110中，具有和上述圖1所示半導體雷射裝置100相同構成的部分係標示和圖1相同的符號，以下以構成的不同部分為中心做說明。 FIG. 10 is a cross-sectional view of a configuration example of the semiconductor laser device 110 in the second embodiment. In the semiconductor laser device 110 shown in FIG. 10, the parts having the same configuration as the semiconductor laser device 100 shown in FIG. 1 are denoted by the same symbols as in FIG. 1, and the following description will focus on the different parts of the configuration.

在蓋罩31往管座21之固定側的相反側之端部，係被固定有透鏡33。透鏡33係為例如非球面透鏡。透鏡33係藉由突起部31b而決定其高度方向位置(從晶片11的發光點起算之距離)。該透鏡33，係隔著環狀之間隔物34而藉由蓋罩31的塑性變形而被固定在蓋罩31。 A lens 33 is fixed to the end of the cover 31 on the side opposite to the fixed side of the tube holder 21. The lens 33 is, for example, an aspheric lens. The height direction position of the lens 33 (the distance from the light-emitting point of the wafer 11) is determined by the protrusion 31b. The lens 33 is fixed to the cover 31 by plastic deformation of the cover 31 via a ring-shaped spacer 34.

如圖11所示，透鏡33的直徑，係比蓋罩31的本體部31a的透鏡固定前的透鏡固定側的端部(圖11的上端部)的內徑還小。將透鏡33固定至蓋罩31之際，係將透鏡33放在本體部31a內的突起部31b上，在透鏡33的外周面與本體部31a的內周面之間隙中，配置有厚度比該當間隙還薄的間隔物34。此處，間隔物34係由可塑性變形之材料所構成。然後，如箭頭A所示，將間隔物34予以加壓。如此一來，間隔物34係變形而被充填在透鏡 33與蓋罩31之間隙。間隔物34的加壓，係可使用環狀之模具等。又，此時如箭頭B所示，蓋罩31的透鏡固定側端部的直徑會變大，如圖3所示，成為R1>R2>R3之關係。如此，透鏡33係藉由歛縫固定而被固定在蓋罩31。 As shown in FIG. 11, the diameter of the lens 33 is smaller than the inner diameter of the end (upper end of FIG. 11) on the lens fixing side of the body portion 31a of the cover 31 before the lens is fixed. When the lens 33 is fixed to the cover 31, the lens 33 is placed on the protrusion 31b in the main body portion 31a. In the gap between the outer circumferential surface of the lens 33 and the inner circumferential surface of the main body portion 31a, a thickness greater than this is arranged. Spacers 34 whose gaps are still thin. Here, the spacer 34 is made of a plastically deformable material. Then, as indicated by arrow A, the spacer 34 is pressurized. In this way, the spacer 34 is deformed and is filled in the lens 33 and the gap between the cover 31. The spacer 34 can be pressurized by using a ring-shaped mold or the like. Also, at this time, as indicated by the arrow B, the diameter of the lens fixing side end of the cover 31 becomes larger, and as shown in FIG. 3, the relationship becomes R1>R2>R3. In this way, the lens 33 is fixed to the cover 31 by crimping.

間隔物34係可使用例如鋁。此外，間隔物34所使用的材料，係只要是可塑性變形之材料即可，不限定於上記。但是，為了確保氣密性，使用硬度較低的Al系材料，較為理想。 For the spacer 34, for example, aluminum can be used. In addition, the material used for the spacer 34 is not limited to the above as long as it is a plastically deformable material. However, in order to ensure airtightness, it is preferable to use an Al-based material with a low hardness.

藉由以上的構成，和上述第一實施形態同樣地，可實現光輸出之降低的防止與透鏡曲率之設計自由度的提升。 With the above configuration, as in the first embodiment described above, it is possible to prevent the decrease in light output and increase the degree of freedom in lens curvature design.

(第三實施形態) (Third Embodiment)

接著說明本發明的第三實施形態。 Next, the third embodiment of the present invention will be described.

在上述第一及第二實施形態中，說明了在蓋罩31設置突起部31b的情況，但在第三實施形態中係說明，不設置突起部31b就將透鏡予以固定的情況。 In the first and second embodiments described above, the case where the protrusion 31b is provided on the cover 31 is described, but in the third embodiment, the case where the lens is fixed without providing the protrusion 31b is described.

圖12係第三實施形態中的半導體雷射裝置120之構成例的剖面圖。於該圖12所示的半導體雷射裝置120中，具有和上述圖1所示半導體雷射裝置100相同構成的部分係標示和圖1相同的符號，以下以構成的不同部分為中心做說明。 FIG. 12 is a cross-sectional view of a configuration example of the semiconductor laser device 120 in the third embodiment. In the semiconductor laser device 120 shown in FIG. 12, the parts having the same configuration as the semiconductor laser device 100 shown in FIG. 1 are denoted by the same symbols as in FIG. 1, and the following description will focus on the different parts of the configuration.

蓋罩35係具備：圓筒狀(圓環狀)的本體部35a、和被設在本體部35a之端部的凸緣部35b。凸緣部35b係被設在，蓋罩35往管座21之固定側端部。該蓋罩35係可藉 由例如沖壓加工而形成。又，蓋罩35係由可塑性變形之材料所構成。作為蓋罩35的材料，係可使用和上述的蓋罩31相同的材料。 The cover 35 includes a cylindrical (annular) body portion 35a and a flange portion 35b provided at the end of the body portion 35a. The flange 35b is provided at the end of the cover 35 toward the fixed side of the socket 21. The cover 35 series can borrow It is formed by, for example, pressing. In addition, the cover 35 is made of a plastically deformable material. As the material of the cover 35, the same material as the aforementioned cover 31 can be used.

在蓋罩35往管座21之固定側的相反側之端部，係被固定有透鏡36。透鏡36係為例如非球面透鏡。該透鏡36，係藉由蓋罩35的塑性變形而被固定在蓋罩35，在透鏡36已被固定之狀態下，蓋罩35的形狀，係和圖3所示的蓋罩31同樣地，成立R1>R2>R3之關係。 A lens 36 is fixed to the end of the cover 35 on the side opposite to the fixed side of the tube holder 21. The lens 36 is, for example, an aspheric lens. The lens 36 is fixed to the cover 35 by the plastic deformation of the cover 35. When the lens 36 is fixed, the shape of the cover 35 is the same as that of the cover 31 shown in FIG. 3, Establish the relationship R1>R2>R3.

藉由以上的構成，和上述第一及第二實施形態同樣地，可實現光輸出之降低的防止與透鏡曲率之設計自由度的提升。又，在本實施形態中，蓋罩35係不像上述的蓋罩31般地具有往本體部31a之內側面突出的突起部31b，因此可藉由沖壓加工等而較為容易地製造，而較為廉價。 With the above configuration, as in the first and second embodiments described above, it is possible to prevent the decrease in light output and increase the degree of freedom in lens curvature design. Also, in this embodiment, the cover 35 does not have the protrusion 31b protruding from the inner surface of the main body 31a like the above-mentioned cover 31, so it can be manufactured relatively easily by press working or the like. cheap.

(變形例) (Modification)

此外，於上記各實施形態中，說明了藉由壓入、或歛縫固定而將透鏡固定在蓋罩的情況，但透鏡是只要藉由蓋罩的塑性變形而被固定即可，固定方法係不限定於上記。例如，亦可預先加熱蓋罩而使其熱膨脹，將與蓋罩的內徑同徑或其以下的透鏡配置在蓋罩的圓筒內部後，使蓋罩冷卻。此情況也是，蓋罩冷卻的結果，透鏡係藉由蓋罩的塑性變形而被固定。 In addition, in each of the above-mentioned embodiments, the case where the lens is fixed to the cover by press-fitting or caulking is described, but the lens only needs to be fixed by plastic deformation of the cover. The fixing method is Not limited to the above. For example, the cover may be heated in advance to thermally expand it, and a lens having the same diameter as or less than the inner diameter of the cover may be arranged inside the cylinder of the cover, and then the cover may be cooled. In this case, as a result of the cooling of the cover, the lens is fixed by plastic deformation of the cover.

又，固定在蓋罩的透鏡的形狀，係不限定於上述的形 狀。透鏡的形狀，係可使得來自晶片11的雷射光變成平行光、聚光、發散光等，隨著用途而可射出相應的光束形狀，且與蓋罩的接觸面(透鏡外周側面)上可以確保氣密性的形狀即可。 In addition, the shape of the lens fixed to the cover is not limited to the above-mentioned shape. shape. The shape of the lens can make the laser light from the wafer 11 become parallel light, condensed light, divergent light, etc., and can emit the corresponding beam shape according to the application, and the contact surface with the cover (the outer peripheral surface of the lens) can be secured The air-tight shape is sufficient.

11‧‧‧半導體雷射晶片(晶片) 11‧‧‧Semiconductor laser chip (chip)

12‧‧‧次級基板 12‧‧‧Secondary substrate

21‧‧‧管座 21‧‧‧Tube seat

21a‧‧‧散熱片部 21a‧‧‧Heat sink

31‧‧‧蓋罩 31‧‧‧Cover

31a‧‧‧本體部 31a‧‧‧Main body

31b‧‧‧突起部 31b‧‧‧Protrusion

31c‧‧‧凸緣部 31c‧‧‧Flange

32‧‧‧透鏡 32‧‧‧Lens

32a‧‧‧外周部 32a‧‧‧peripheral part

L‧‧‧雷射光 L‧‧‧Laser light

100‧‧‧半導體雷射裝置 100‧‧‧Semiconductor laser device

Claims (9)

一種半導體雷射裝置，其特徵為，具備：管座；和半導體雷射元件，係被搭載於前記管座，並射出雷射光；和蓋罩，係由可塑性變形之材料所構成，具有將前記半導體雷射元件予以包圍的筒狀之本體部，前記本體部之一端側係被接合於前記管座；和透鏡，係在前記蓋罩的前記本體部之他端側，以塞住該當本體部之開口部的方式而被固定；和間隔物，是被配置在前記蓋罩的前記本體部與前記透鏡之間的環狀且可塑性變形之間隔物，前記透鏡，係藉由前記蓋罩的前記本體部的塑性變形，而被固定在該當本體部。 A semiconductor laser device, characterized in that it is provided with: a tube base; and a semiconductor laser element, which is mounted on the tube base and emits laser light; and a cover, which is composed of a plastically deformable material and has a The cylindrical body part surrounded by the semiconductor laser element, one end of the preface body part is joined to the preface socket; and the lens is attached to the other end side of the preface body part of the preface cover to plug the body part The opening part is fixed; and the spacer is a ring-shaped and plastically deformable spacer that is arranged between the preface body part of the preface cover and the preface lens. The preface lens is provided by the preface of the preface cover The plastic deformation of the main body is fixed to the proper main body. 如請求項1所記載之半導體雷射裝置，其中，前記本體部的前記他端側之外徑，係大於前記一端側之外徑。 The semiconductor laser device described in claim 1, wherein the outer diameter of the other end side of the foregoing main body is larger than the outer diameter of the foregoing end side. 如請求項1所記載之半導體雷射裝置，其中，前記蓋罩係具有：往前記本體部之內側面突出的突起部。 The semiconductor laser device according to claim 1, wherein the front cover has a protrusion that protrudes toward the inner surface of the front body. 如請求項1所記載之半導體雷射裝置，其中，前記半導體雷射元件，係藉由前記蓋罩、前記透鏡及前記管座而被氣密密封。 The semiconductor laser device according to claim 1, wherein the semiconductor laser element is hermetically sealed by the pre-shaped cover, the pre-shaped lens, and the pre-shaped tube holder. 如請求項4所記載之半導體雷射裝置，其中，前 記氣密密封的氣密空間的滲漏量，為10-6〔Pa‧m3/sec〕以下。 The semiconductor laser device described in claim 4, wherein the amount of leakage in the airtight airtight space mentioned above is 10 -6 [Pa‧m 3 /sec] or less. 如請求項1所記載之半導體雷射裝置，其中，前記透鏡係在其表面具有反射防止膜。 The semiconductor laser device according to claim 1, wherein the aforementioned lens has an anti-reflection film on its surface. 一種半導體雷射裝置之製造方法，其特徵為，包含：將半導體雷射元件固定於管座之工程；和使由可塑性變形之材料所構成的筒狀之本體部之一端做塑性變形，以塞住前記本體部之開口部的方式，固定透鏡之工程；和將前記蓋罩的前記本體部之他端側接合於前記管座之工程。 A method of manufacturing a semiconductor laser device, which is characterized in that it includes: fixing the semiconductor laser element to a tube base; and plastically deforming one end of a cylindrical body made of a plastically deformable material to plug The method of holding the opening of the preface body part, the process of fixing the lens; and the process of joining the other end side of the preface body part of the preface cover to the preface tube seat. 如請求項7所記載之半導體雷射裝置之製造方法，其中，將前記透鏡予以固定之工程係包含：將前記透鏡***至前記本體部的前記開口部之工程；和在前記本體部與前記透鏡之間***環狀之間隔物之工程；和藉由使前記間隔物塑性變形，來使前記本體部的前記一端塑性變形，使前記本體部的前記一端側的外徑大於前記他端側的外徑之工程。 The method of manufacturing a semiconductor laser device described in claim 7, wherein the process of fixing the preface lens includes: the process of inserting the preface lens into the preface opening of the preface body part; and the process of inserting the preface lens into the preface body part and the preface lens The process of inserting a ring-shaped spacer between them; and plastically deforming the front end of the front part of the body by plastically deforming the front part of the spacer, so that the outer diameter of the front part of the front part of the body is larger than the outer diameter of the other end of the front part. Path of the project. 如請求項7所記載之半導體雷射裝置之製造方法，其中，在將前記透鏡予以固定之工程之前，還包含： 在前記透鏡的表面形成反射防止膜之工程。 The method for manufacturing a semiconductor laser device described in claim 7, wherein, before the process of fixing the aforementioned lens, it further includes: The process of forming anti-reflection film on the surface of the front lens.
TW105141439A 2016-02-03 2016-12-14 Semiconductor laser device and manufacturing method thereof TWI698058B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-019293 2016-02-03
JP2016019293A JP6558259B2 (en) 2016-02-03 2016-02-03 Semiconductor laser device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW201740644A TW201740644A (en) 2017-11-16
TWI698058B true TWI698058B (en) 2020-07-01

Family

ID=59500230

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105141439A TWI698058B (en) 2016-02-03 2016-12-14 Semiconductor laser device and manufacturing method thereof

Country Status (3)

Country Link
JP (1) JP6558259B2 (en)
TW (1) TWI698058B (en)
WO (1) WO2017134923A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111066213B (en) * 2017-09-12 2022-04-05 三菱电机株式会社 Method for manufacturing optical module
DE102018210135B4 (en) * 2018-06-21 2023-06-29 Trumpf Photonics, Inc. Laser diode assembly and method of assembling a laser diode assembly
JP7255409B2 (en) * 2019-07-26 2023-04-11 ウシオ電機株式会社 Light source device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201434171A (en) * 2013-01-29 2014-09-01 Panasonic Corp Ultraviolet light emitting apparatus
JP2015014803A (en) * 2014-09-03 2015-01-22 日立マクセル株式会社 Aspherical-lensed cap, manufacturing method therefor, and manufacturing method for light source module

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62276517A (en) * 1986-05-26 1987-12-01 Hitachi Ltd Photoelectronic device
JP3102174B2 (en) * 1992-12-24 2000-10-23 株式会社日立製作所 Method for manufacturing semiconductor light emitting device
JPH10313147A (en) * 1997-05-09 1998-11-24 Hitachi Koki Co Ltd Semiconductor laser optical source
JP2004165398A (en) * 2002-11-13 2004-06-10 Sony Corp Semiconductor laser device
JP2007225696A (en) * 2006-02-21 2007-09-06 Mitsubishi Electric Corp Optical module manufacturing method, optical module, and optical module member
JP5206944B2 (en) * 2008-02-25 2013-06-12 富士ゼロックス株式会社 Optical module and medical optical measurement system using the same
JP2014149465A (en) * 2013-02-02 2014-08-21 Konica Minolta Inc Optical component and optical device including the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201434171A (en) * 2013-01-29 2014-09-01 Panasonic Corp Ultraviolet light emitting apparatus
JP2015014803A (en) * 2014-09-03 2015-01-22 日立マクセル株式会社 Aspherical-lensed cap, manufacturing method therefor, and manufacturing method for light source module

Also Published As

Publication number Publication date
TW201740644A (en) 2017-11-16
JP6558259B2 (en) 2019-08-14
JP2017139332A (en) 2017-08-10
WO2017134923A1 (en) 2017-08-10

Similar Documents

Publication Publication Date Title
US10840414B2 (en) Optical semiconductor apparatus and method of manufacturing optical semiconductor apparatus
TWI698058B (en) Semiconductor laser device and manufacturing method thereof
JP5539618B2 (en) Semiconductor mounting for ultra-high vacuum tubes
JP6737760B2 (en) Light emitting device and lid used therefor
US20160178866A1 (en) Optical module and optical module lens cap
JP6511807B2 (en) Semiconductor laser device, light source device, method of manufacturing semiconductor laser device, and method of manufacturing light source device
US5878069A (en) Semiconductor laser diode assembly
US10411167B2 (en) Semiconductor light emitting apparatus, stem part
JP2003110181A (en) Semiconductor laser device and method of manufacturing the same
JP3626313B2 (en) Electron tube
JP6197606B2 (en) Compound semiconductor light emitting device manufacturing method and compound semiconductor light emitting device manufactured by the manufacturing method
JP2016219504A (en) Light-emitting device
EP0687014B1 (en) Pressure contact type semiconductor device of the light triggered type
JP2016046007A (en) Electromagnetic contactor
KR101704831B1 (en) Optoelectronic semiconductor chip with gas-filled mirror
JP2008216174A (en) Infrared detector and method of manufacturing the same
JP7271243B2 (en) Laser device and lid used therefor
JP5123223B2 (en) Infrared sensor element package
JPH0555712A (en) Optical semiconductor device and its assembly method
JP2007324412A (en) Semiconductor laser module
JP2020113610A (en) Protective cover
JP2013219237A (en) Vacuum package and manufacturing method of the same
JP2005347564A (en) Airtight seal package
JP2007048937A (en) Semiconductor laser and manufacturing method thereof
US6090642A (en) Semiconductor laser diode assembly and method of manufacturing the same