TWI694168B - Device and method for supplying a cvd or pvd coating device with a process gas mixture - Google Patents

Device and method for supplying a cvd or pvd coating device with a process gas mixture Download PDF

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TWI694168B
TWI694168B TW104114708A TW104114708A TWI694168B TW I694168 B TWI694168 B TW I694168B TW 104114708 A TW104114708 A TW 104114708A TW 104114708 A TW104114708 A TW 104114708A TW I694168 B TWI694168 B TW I694168B
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gas
mixing chamber
flow
mixing
chamber
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TW201602398A (en
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巴斯卡爾 帕加達拉 戈琵
愛德華多 奧斯曼 舒凡 皮內羅
馬庫斯 葛斯多夫
馬庫斯 賈科柏
斯特芬 諾依曼
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德商愛思強歐洲公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/42—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions
    • B01F25/421—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions by moving the components in a convoluted or labyrinthine path
    • B01F25/423—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions by moving the components in a convoluted or labyrinthine path by means of elements placed in the receptacle for moving or guiding the components
    • B01F25/4231—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions by moving the components in a convoluted or labyrinthine path by means of elements placed in the receptacle for moving or guiding the components using baffles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/42—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions
    • B01F25/43—Mixing tubes, e.g. wherein the material is moved in a radial or partly reversed direction
    • B01F25/431—Straight mixing tubes with baffles or obstructions that do not cause substantial pressure drop; Baffles therefor
    • B01F25/4314—Straight mixing tubes with baffles or obstructions that do not cause substantial pressure drop; Baffles therefor with helical baffles
    • B01F25/43141—Straight mixing tubes with baffles or obstructions that do not cause substantial pressure drop; Baffles therefor with helical baffles composed of consecutive sections of helical formed elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/50—Mixing receptacles
    • B01F35/52—Receptacles with two or more compartments
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/71—Feed mechanisms
    • B01F35/712—Feed mechanisms for feeding fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/71—Feed mechanisms
    • B01F35/716—Feed mechanisms characterised by the relative arrangement of the containers for feeding or mixing the components
    • B01F35/7163—Feed mechanisms characterised by the relative arrangement of the containers for feeding or mixing the components the containers being connected in a mouth-to-mouth, end-to-end disposition, i.e. the openings are juxtaposed before contacting the contents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本發明首先係有關一種供氣裝置，包括：進入通道(22)，用於將分別由一氣體源(21)提供之單一氣流送入第一混合室(12)，其中在該第一混合室(12)中，特定言之藉由一或數個第一氣體致偏元件(13)使該等單一氣流發生單一偏轉或多重偏轉並將該等單一氣流混合；溢流障壁(14)，由所有單一氣流組成之第一氣流越過該溢流障壁而由該第一混合室(12)進入第二混合室(15)，在該第二混合室中，特定言之藉由第二氣體致偏元件(16)使該第一氣流發生單一偏轉或多重偏轉；及排氣通道(8)，用於將該氣流由該第二混合室(15)排出至CVD或PVD塗佈裝置(1)之進氣機構(5)。提出以下創新方案：該等單一氣流在該等氣體源(21)與該進氣機構(5)間具有相同之有效徑長。本發明另亦有關一種將製程氣體供給至CVD或PVD塗佈裝置之進氣機構(9)的方法，其特徵在於，該等氣體在該氣體源(21)與該進氣機構(5)間之路徑上的有效停留時間至多相差十毫秒。 The present invention first relates to a gas supply device, which includes: an inlet channel (22) for feeding a single gas flow respectively provided by a gas source (21) into a first mixing chamber (12), wherein the first mixing chamber In (12), specifically, one or more first gas deflecting elements (13) cause the single gas flow to undergo single deflection or multiple deflections and mix the single gas flows; the overflow barrier (14), by The first gas flow composed of all the single gas flows crosses the overflow barrier and enters the second mixing chamber (15) from the first mixing chamber (12). In the second mixing chamber, in particular, the second gas is deflected The element (16) causes the first gas flow to deflect single or multiple times; and the exhaust channel (8) is used to discharge the gas flow from the second mixing chamber (15) to the CVD or PVD coating device (1) Intake mechanism (5). The following innovative solution is proposed: the single gas flows have the same effective diameter length between the gas sources (21) and the air intake mechanism (5). The invention also relates to a method for supplying process gas to the gas inlet mechanism (9) of the CVD or PVD coating device, characterized in that the gases are between the gas source (21) and the gas inlet mechanism (5) The effective residence time on the path is at most ten milliseconds.

Description

用於將製程氣體混合物供給至CVD或PVD塗佈裝置之裝置及方法 Device and method for supplying process gas mixture to CVD or PVD coating device

本發明係有關一種供氣裝置，包括：進入通道，用於將分別由一氣體源提供之單一氣流送入第一混合室，其中在該第一混合室中，特定言之藉由一或數個第一氣體致偏元件使該等單一氣流發生單一偏轉或多重偏轉並將該等單一氣流混合；溢流障壁，由所有單一氣流組成之第一氣流越過該溢流障壁而由該第一混合室進入第二混合室，在該第二混合室中，特定言之藉由第二氣體致偏元件使該第一氣流發生單一偏轉或多重偏轉；及排氣通道，用於將該氣流由該第二混合室排出至CVD或PVD塗佈裝置之進氣機構。 The invention relates to a gas supply device, which includes: an inlet channel for feeding a single gas flow provided by a gas source into a first mixing chamber, wherein in the first mixing chamber, specifically by one or more A first gas deflecting element causes the single gas streams to deflect single or multiple deflections and mix the single gas streams; the overflow barrier, the first gas stream composed of all single gas streams crosses the overflow barrier and is mixed by the first The chamber enters a second mixing chamber, in which the first gas flow is specifically deflected by the second gas deflection element in a single deflection or multiple deflections; and an exhaust channel is used to divert the gas flow from the The second mixing chamber is discharged to the air intake mechanism of the CVD or PVD coating device.

本發明另亦有關一種將製程氣體供給至CVD或PVD塗佈裝置之進氣機構的方法，包括以下步驟：- 分別用一氣體源提供數種製程氣體；- 將該等製程氣體以單一氣流之形式由各氣體源分別透過一進入通道分開送入第一混合室；- 在該第一混合室中，特定言之藉由第一氣體致偏元件使該等單一氣流發生偏轉並將該等單一氣流混合；- 由所有單一氣體組成之第一氣流越過溢流障壁而進入第二混合室；- 特定言之藉由第二氣體致偏元件使該氣流發生偏轉； - 將由所有單一氣流組成之氣流由排氣通道排出至該進氣機構。 The present invention also relates to a method for supplying process gas to the gas inlet mechanism of a CVD or PVD coating device, which includes the following steps:-providing a plurality of process gases with a gas source;-using a single gas flow of these process gases Each gas source is separately fed into the first mixing chamber through an inlet channel;-in the first mixing chamber, specifically, the single gas flow is deflected by the first gas deflection element and the single Gas flow mixing;-The first gas flow composed of all single gases crosses the overflow barrier and enters the second mixing chamber;-Specifically, the gas flow is deflected by the second gas deflection element; -The airflow composed of all single airflows is discharged from the exhaust channel to the air intake mechanism.

氣體混合裝置用於混合多種不同之氣體，該等氣體分別由一例如管件形式之進入通道導入預混室並於該處進行第一次混合。氣體在預混室中發生偏轉並被送往第二混合室(例如混氣管)。US 2009/0120364 A1即描述此種氣體混合裝置，其強制氣體打旋以改良混合效果。設有嵌件形式之氣體致偏裝置，該嵌件***混氣管。 The gas mixing device is used to mix a variety of different gases. These gases are introduced into the premixing chamber from an inlet channel in the form of a pipe, for example, and are mixed there for the first time. The gas is deflected in the premixing chamber and sent to the second mixing chamber (eg, gas mixing pipe). US 2009/0120364 A1 describes such a gas mixing device, which forces the gas to swirl to improve the mixing effect. There is a gas deflection device in the form of an insert, which is inserted into the gas mixing tube.

上述混合裝置應用於CVD或PVD裝置。此類裝置具有反應器殼體、設於該反應器殼體內之蓮蓬頭型進氣機構及上面平放有基板之基座。基座可被加熱或冷卻，具體視需於基板表面進行熱激發化學反應抑或僅需在基板表面完成冷凝而定。透過進氣機構將氣體混合物導入設於基板上方之處理室。氣體混合裝置用於混合該由數種單一氣體組成之氣體混合物。 The above mixing device is applied to a CVD or PVD device. Such a device has a reactor housing, a showerhead-type air intake mechanism provided in the reactor housing, and a base on which a substrate is laid flat. The susceptor can be heated or cooled, depending on whether a thermally excited chemical reaction needs to be performed on the substrate surface or only condensation on the substrate surface is required. The gas mixture is introduced into the processing chamber provided above the substrate through the air intake mechanism. The gas mixing device is used to mix the gas mixture composed of several single gases.

US 7,540,305 B2例如揭露一種CVD處理室，其包含被構造成蓮蓬頭之進氣機構，可將不同製程氣體送入該進氣機構。該蓮蓬頭上游設有氣體混合裝置。 US 7,540,305 B2, for example, discloses a CVD processing chamber, which includes an air intake mechanism configured as a shower head, which can feed gases of different processes into the air intake mechanism. A gas mixing device is arranged upstream of the shower head.

DE 10 2005 003 984 A1描述一種環形室，其包圍蓮蓬頭，用於混合製程氣體。US 2003/0019428 A1亦描述一種沿流向設於進氣機構前面之混合室。 DE 10 2005 003 984 A1 describes an annular chamber which surrounds the shower head and is used for mixing process gases. US 2003/0019428 A1 also describes a mixing chamber provided in front of the intake mechanism along the flow direction.

DE 10 2013 113 817描述一種扁平柱形殼體形式之氣體混合裝置。該殼體包含兩混合室。在設於徑向外側之混合室中，透過呈星型佈置之進入通道將不同製程氣體送入設於徑向外側之 預混室。預混室中設有能使被送入預混室之單一氣流發生偏轉之第一氣體致偏元件。其中，單一氣流沿一橫向於進入通道所在之進入平面之延伸平面的方向偏轉。其越過溢流障壁而進入第二混合室，該第二混合室設於氣體混合裝置中央且具有開口朝下之排氣通道，在該排氣通道中設有第二氣體致偏元件。此未出版公開案與本發明屬同一類型。 DE 10 2013 113 817 describes a gas mixing device in the form of a flat cylindrical shell. The housing contains two mixing chambers. In the mixing chamber located on the outside in the radial direction, gases of different processes are sent to the outlet located on the outside in the radial direction through the star-shaped inlet channels Premix room. The premixing chamber is provided with a first gas deflecting element capable of deflecting the single gas flow fed into the premixing chamber. Wherein, the single air flow is deflected in a direction transverse to the extension plane of the entry plane where the entry channel is located. It crosses the overflow barrier and enters the second mixing chamber. The second mixing chamber is provided in the center of the gas mixing device and has an exhaust channel with an opening facing downward, and a second gas deflection element is provided in the exhaust channel. This unpublished publication is of the same type as the present invention.

EP 1 252 363 B1描述一種CVD反應器，其氣體混合系統設於進氣機構上方，處理室頂部正上方。 EP 1 252 363 B1 describes a CVD reactor whose gas mixing system is arranged above the gas inlet mechanism and directly above the top of the processing chamber.

US 6,758,591 B1描述一種氣體混合裝置，包括居中佈置之第一混合室，該第一混合室由數個呈星型佈置之進氣通道饋氣。所饋送之氣流在中央混合室中打旋並經由渦旋格柵沿軸向離開第一混合室以沿徑向向外流動，其中該氣流大約偏轉90度。在中央第一混合室中經預混之氣流穿過設於中央第一混合室徑向外側之第二混合室，以便離開呈星型佈置之排出通道而進入進氣機構。 US 6,758,591 B1 describes a gas mixing device comprising a centrally arranged first mixing chamber, which is fed by a plurality of star-shaped air inlet channels. The fed airflow swirls in the central mixing chamber and leaves the first mixing chamber axially via a vortex grid to flow radially outward, wherein the airflow is deflected by approximately 90 degrees. The pre-mixed gas flow in the central first mixing chamber passes through the second mixing chamber located radially outside the central first mixing chamber, so as to leave the star-shaped discharge channel and enter the air intake mechanism.

US 6,495,233 B1描述一種CVD反應器，包括蓮蓬頭以及設於該蓮蓬頭上方之用於混合製程氣體的混合裝置。由電漿發生器提供之製程氣體沿平行分佈之進入通道流入渦旋室並於該處打旋。 US 6,495,233 B1 describes a CVD reactor including a shower head and a mixing device for mixing process gases provided above the shower head. The process gas provided by the plasma generator flows into the vortex chamber along the parallel distribution inlet channels and swirls there.

EP 1 452 626 B1描述一種用於混合兩氣體之氣體混合裝置，此二氣體經相互分離之進氣通道進入第一混合室。一間壁將第一混合室與擴散室隔開。經進入通道流入且在第一混合室中經預混之兩製程氣體透過該間壁之開口而進入擴散室並該處進一步混合。 EP 1 452 626 B1 describes a gas mixing device for mixing two gases. The two gases enter the first mixing chamber through separate intake channels. A wall separates the first mixing chamber from the diffusion chamber. The two process gases flowing through the inlet channel and pre-mixed in the first mixing chamber enter the diffusion chamber through the opening of the partition wall and are further mixed there.

US 6,068,703描述一種用於混合數種製程氣體之氣體 混合裝置，該等製程氣體經由若干沿徑向朝中心延伸之進氣通道進入混合室。該混合室具有呈環形圍繞中心佈置之停留室，製程氣體須呈迴形穿過該等停留室以實現混合。總氣流透過設於中央之排氣口而進入進氣機構。 US 6,068,703 describes a gas for mixing several process gases In the mixing device, the process gases enter the mixing chamber through a number of intake channels extending radially toward the center. The mixing chamber has residence chambers arranged annularly around the center, and the process gas must pass through the residence chambers in a round shape to achieve mixing. The total air flow enters the air intake mechanism through the exhaust port provided in the center.

US 2011/0223334 A1描述一種CVD反應器，包括反應器護蓋，在該反應器護蓋上設有氣體源及混合室。該混合室設於中央且由沿徑向朝中心延伸之進氣通道饋氣。單一氣流在混合室中進行混合。 US 2011/0223334 A1 describes a CVD reactor including a reactor cover, on which a gas source and a mixing chamber are provided. The mixing chamber is provided at the center and is fed by an intake passage extending radially toward the center. A single gas flow is mixed in the mixing chamber.

WO 97/35107揭露管段形氣體致偏元件。淨切(freigeschnitten)彎曲致偏板由圓柱形管件之壁部伸入該管件之流道。 WO 97/35107 discloses a pipe segment-shaped gas deflection element. The deflection plates of the net cut (freigeschnitten) extend from the wall of the cylindrical pipe into the flow path of the pipe.

本發明之目的在於對用於將製程氣體供給至進氣機構之供氣裝置或方法進行技術改良。 The purpose of the present invention is to technically improve the gas supply device or method for supplying process gas to the intake mechanism.

該目的透過申請專利範圍所給出的本發明而達成。 This objective is achieved by the invention given in the scope of patent application.

作為申請專利範圍主題之各項特徵的優點如下：本發明之裝置被構造成使得該等單一氣流在該等氣體源與該進氣機構間具有相同之有效徑長。該等單一氣流若具有相同之有效徑長，則該等不同氣體在該供氣裝置中具有相同之停留時間。在進入通道具有不同直徑或混合室區段採用不同構造之情況下，可透過不同壓力比來保持該相同之停留時間。但亦可透過不同之管線長度來補償不同直徑。對稱方案為較佳之選，其中進入通道及相對應之混合室區段採用相同構造。故此，「有效徑長」具體係指單一氣流以相同時間穿過第一混合室時所沿之流動路徑。可透過不同壓力比來補償各 流道間可能存在之幾何差別。在進入通道採用使得所有進入通道皆具有相同截面且在相同之幾何環境中通入混合室的對稱方案情況下，有效徑長乃是每個單一氣流由相關進入通道通往混合室之出口到排氣通道起點之流動路徑的幾何距離。該等單一氣流較佳分別為一層流，故該等徑長基本取決於流線。單一氣流在第一混合室中基本透過單一氣流之橫向擴散及多重偏轉而實現混合。設於第一混合室中之第一氣體致偏元件可被佈置成使得其大體具有增長流徑之特性。第一氣體致偏元件相對於進氣通道之星型排佈較佳對稱設於第一混合室內部，從而使得各單一氣流至少沿等效之流動路徑流動。第一氣體致偏元件可被佈置成使得單一氣流呈螺旋線形穿過環柱形第一混合室。在此過程中，單一氣流具有橫向於該進入平面之延伸平面的運動分量。在此過程中，單一氣流具有橫向於該進入平面之延伸平面的運動分量。但單一氣流在形成該延伸平面之方向上亦具有運動分量。在此等方向上較佳形成圓周運動或渦旋運動。其中，單一氣流沿螺旋線穿過第一混合室，例如沿混合室之虛軸由下向上。在第一混合室內側可設有第二混合室。兩混合室可由同心佈置之管件構成。在此情況下，第一混合室形成外圍混合室，第二混合室形成中央混合室。單一氣流在第一混合室內部匯合成預混第一氣流，該第一氣流越過溢流障壁。該溢流障壁可為一同時形成第一混合室之內壁及第二混合室之外壁之管件的端緣。在第二混合室中設有其他的第二氣體致偏元件，其能使越過溢流障壁而進入第二混合室之氣流發生單一偏轉或多重偏轉。第二氣體致偏元件以能引發渦旋之方式進行構建與佈置。第一氣體致偏元件較佳採用能使氣體層流發生單一偏轉或多重偏轉之構造與佈置方式，第二氣體致偏元 件則採用能產生渦旋之佈置方式。故此，第二氣體致偏元件係產生由全部單一氣流組成之第二氣體渦流。穿過第二混合室之氣流經排氣通道離開第二混合室，其中氣體排出方向較佳橫向於氣體饋送方向。因此，該排氣通道之延伸方向較佳橫向於該進氣平面之延伸平面。該二混合室之壁部可呈圓柱形且可由同心管件形成。該等管件之虛軸橫向於該進氣平面延伸。氣體在兩管件中以相反方向流動。該等氣體源可為蒸發源。此等蒸發源包含固態或液態起始材料，藉由施加蒸發熱將其變成氣態。藉由可定量載氣將此已蒸發起始材料透過進入通道送往第一混合室。單一氣流較佳以相同之平均流速由饋送通道進入第一混合室。可用質量流量控制器調節單一氣流之流速。但該等氣體源亦可為氣膠蒸發器。其亦藉由施加蒸發熱而將液態或固態起始材料變成氣態。蒸汽之質量流量一方面可透過蒸發面之溫度來加以控制，另一方面亦可透過載氣流量來加以控制。根據本發明，各氣體在氣體混合裝置內部(即在氣體源與CVD反應器之進氣機構間之區域)的停留時間大體為同等長度。停留時間之差至多為10毫秒。該等氣體在氣體混合裝置內部之停留時間較佳不超過100毫秒。在替代性裝置中，第一混合室亦可具有用以產生渦流之流動障礙物。第二混合室同樣可具有流動障礙物。但其亦可具有用於形成層流之導流元件。 The advantages of the features that are the subject of the patent application are as follows: The device of the present invention is constructed such that the single gas flows have the same effective diameter length between the gas sources and the air intake mechanism. If the single gas flows have the same effective diameter length, the different gases have the same residence time in the gas supply device. In the case where the inlet channels have different diameters or the mixing chamber sections adopt different configurations, the same residence time can be maintained through different pressure ratios. But different diameters can also be compensated by different pipeline lengths. A symmetrical scheme is a better choice, in which the inlet channel and the corresponding mixing chamber section adopt the same structure. Therefore, the "effective diameter length" specifically refers to the flow path along which a single airflow passes through the first mixing chamber at the same time. Different pressure ratios can be used to compensate each There may be geometric differences between the flow channels. In the case where the inlet channel adopts a symmetrical scheme such that all inlet channels have the same cross-section and lead into the mixing chamber in the same geometric environment, the effective diameter length is that each single airflow flows from the relevant inlet channel to the outlet of the mixing chamber to the exhaust The geometric distance of the flow path from the beginning of the gas channel. The single air flows are preferably one-layer flows, so the diameters are basically determined by the flow lines. The single air flow in the first mixing chamber basically achieves mixing through the lateral diffusion and multiple deflections of the single air flow. The first gas deflecting element provided in the first mixing chamber may be arranged so that it generally has the characteristic of increasing the flow path. The first gas deflecting element is preferably arranged symmetrically inside the first mixing chamber with respect to the star arrangement of the air inlet channel, so that each single gas flow flows at least along an equivalent flow path. The first gas deflecting element may be arranged such that a single gas flow spirally passes through the annular cylindrical first mixing chamber. In this process, a single airflow has a component of motion transverse to the extension plane of the entry plane. In this process, a single airflow has a component of motion transverse to the extension plane of the entry plane. However, a single airflow also has a motion component in the direction forming the extension plane. Circular motion or vortex motion is preferably formed in these directions. Wherein, a single gas flow passes through the first mixing chamber along a spiral line, for example, from the bottom to the top along the virtual axis of the mixing chamber. A second mixing chamber may be provided on the inside of the first mixing chamber. The two mixing chambers can be composed of concentrically arranged pipes. In this case, the first mixing chamber forms a peripheral mixing chamber, and the second mixing chamber forms a central mixing chamber. The single airflow merges into a premixed first airflow inside the first mixing chamber, and the first airflow crosses the overflow barrier. The overflow barrier may be an end edge of a pipe that simultaneously forms the inner wall of the first mixing chamber and the outer wall of the second mixing chamber. Other second gas deflecting elements are provided in the second mixing chamber, which can cause a single deflection or multiple deflections of the gas flow that enters the second mixing chamber across the overflow barrier. The second gas deflection element is constructed and arranged in such a way as to induce vortex. The first gas deflecting element preferably adopts a structure and arrangement which can cause single or multiple deflections of the gas laminar flow, and the second gas deflecting element The pieces are arranged in a way that produces vortices. Therefore, the second gas deflection element generates a second gas vortex composed of all single gas flows. The gas flow passing through the second mixing chamber leaves the second mixing chamber through the exhaust passage, wherein the gas discharge direction is preferably transverse to the gas feed direction. Therefore, the extension direction of the exhaust passage is preferably transverse to the extension plane of the intake plane. The wall of the two mixing chambers can be cylindrical and can be formed by concentric pipes. The imaginary axis of the pipes extends transverse to the intake plane. The gas flows in opposite directions in the two pipes. These gas sources can be evaporation sources. These evaporation sources contain solid or liquid starting materials, which are turned into gaseous state by applying evaporation heat. The evaporable starting material is sent to the first mixing chamber through the inlet channel by the quantitative carrier gas. The single air flow preferably enters the first mixing chamber from the feed channel at the same average flow rate. A mass flow controller can be used to adjust the flow rate of a single gas flow. However, these gas sources can also be aerosol evaporators. It also changes the liquid or solid starting material into a gaseous state by applying evaporation heat. The mass flow of steam can be controlled on the one hand by the temperature of the evaporation surface and on the other hand by the flow of carrier gas. According to the present invention, the residence time of each gas in the gas mixing device (that is, the area between the gas source and the gas inlet mechanism of the CVD reactor) is substantially the same length. The difference in residence time is at most 10 ms. The residence time of these gases in the gas mixing device is preferably not more than 100 milliseconds. In an alternative device, the first mixing chamber may also have a flow obstacle to generate vortices. The second mixing chamber may also have flow obstacles. However, it can also have flow guiding elements for forming laminar flow.

以下結合所附圖式闡述本發明之實施例。 The embodiments of the present invention will be described below in conjunction with the accompanying drawings.

1‧‧‧反應器殼體 1‧‧‧Reactor shell

2‧‧‧處理室 2‧‧‧Processing room

3‧‧‧基座 3‧‧‧Dock

4‧‧‧基板 4‧‧‧ substrate

5‧‧‧進氣機構 5‧‧‧ Intake mechanism

6:排氣孔 6: vent

7:氣體分配容積 7: gas distribution volume

8:排氣通道 8: Exhaust channel

9:排氣機構 9: Exhaust mechanism

10:真空泵 10: Vacuum pump

11:氣體混合裝置 11: Gas mixing device

12:第一混合室 12: First mixing room

13:第一氣體致偏元件 13: First gas deflection element

13':障礙物 13': Obstacle

14:溢流障壁 14: Overflow barrier

15:第二混合室 15: Second mixing room

16:第二氣體致偏元件 16: Second gas deflection element

17:頂部 17: top

18:柱面壁 18: cylindrical wall

19:管件 19: Pipe fittings

20:底部 20: bottom

21:氣體源 21: Gas source

22:進入通道 22: Enter the channel

22':進入通道 22': Enter the channel

23:饋送通道 23: Feed channel

24:氣體致偏元件 24: gas deflection element

25:橫向通道 25: Lateral passage

圖1為CVD或PVD反應器及相關氣體混合裝置之截面示意圖；圖2為沿圖1中II-II線截取之剖面圖； 圖3為氣體混合裝置第二實施例之視圖；圖4為圖3所示之氣體混合裝置的俯視圖；圖5為第三實施例透視圖，其中氣體混合裝置由U形管件形成；圖6為圖5所示混合裝置之側視圖；圖7為圖5所示混合裝置之俯視圖；圖8為混合裝置第四實施例透視圖；圖9為圖8所示之氣體混合裝置的俯視圖；圖10為沿圖9中X-X線截取之剖面圖；圖11為沿圖9中XI-XI線截取之剖面圖；圖12為氣體混合裝置第五實施例俯視圖；圖13為圖12所示之氣體混合裝置的側視圖；圖14為沿圖13中XIV-XIV線截取之剖面圖；圖15為沿圖13中XV-XV線截取之剖面圖；圖16為沿圖13中XVI-XVI線截取之剖面圖；及圖17為沿圖13中XVII-XVII線截取之剖面圖。 Figure 1 is a schematic cross-sectional view of a CVD or PVD reactor and related gas mixing device; Figure 2 is a cross-sectional view taken along line II-II in Figure 1; 3 is a view of a second embodiment of the gas mixing device; FIG. 4 is a top view of the gas mixing device shown in FIG. 3; FIG. 5 is a perspective view of the third embodiment, wherein the gas mixing device is formed by a U-shaped pipe; FIG. 6 is 5 is a side view of the mixing device; FIG. 7 is a top view of the mixing device shown in FIG. 5; FIG. 8 is a perspective view of the fourth embodiment of the mixing device; FIG. 9 is a top view of the gas mixing device shown in FIG. 9 is a cross-sectional view taken along line XX in FIG. 9; FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 9; FIG. 12 is a top view of a fifth embodiment of a gas mixing device; FIG. 13 is a gas mixing shown in FIG. Side view of the device; Figure 14 is a cross-sectional view taken along the line XIV-XIV in Figure 13; Figure 15 is a cross-sectional view taken along the line XV-XV in Figure 13; Figure 16 is taken along the line XVI-XVI in Figure 13 Sectional view; and FIG. 17 is a sectional view taken along line XVII-XVII in FIG. 13.

圖1及圖2示出本發明之第一實施例。內部可抽真空之氣密反應器殼體1包含進氣機構5，該進氣機構包括氣體分配容積7及排氣板，該排氣板具有數個似蓮蓬頭般佈置之排氣孔6，該等排氣孔指向處理室2，待塗佈基板4平放於該處理室底部。基板4平放於可被加熱裝置加熱至處理溫度或者可被冷卻裝置冷卻至處理溫度之基座3上。基座3被環形排氣機構9包圍，該排氣機構連接至真空泵10，利用該真空泵可調節處理室2或反應器殼體1內部之總壓力。 1 and 2 show the first embodiment of the present invention. The gas-tight reactor shell 1 that can be evacuated internally includes an air intake mechanism 5 that includes a gas distribution volume 7 and an exhaust plate. The exhaust plate has a plurality of exhaust holes 6 arranged like a shower head. The exhaust holes are directed toward the processing chamber 2, and the substrate 4 to be coated is placed flat on the bottom of the processing chamber. The substrate 4 is placed flat on the base 3 which can be heated to the processing temperature by the heating device or can be cooled to the processing temperature by the cooling device. The base 3 is surrounded by a ring-shaped exhaust mechanism 9, which is connected to a vacuum pump 10 by which the total pressure inside the processing chamber 2 or the reactor housing 1 can be adjusted.

透過排氣通道8為進氣機構5饋送製程氣體，該排氣通道經反應器殼體1之頂部而伸入內部。 The intake mechanism 5 is fed with process gas through the exhaust passage 8, which extends into the interior through the top of the reactor housing 1.

排氣通道8連接氣體混合裝置之殼體的底部20，該氣體混合裝置可設於反應器殼體1之頂壁的正上方。該氣體混合裝置可與反應器殼體1之頂壁固連。該頂壁可為該氣體混合裝置之支架。 The exhaust channel 8 is connected to the bottom 20 of the housing of the gas mixing device, which can be located directly above the top wall of the reactor housing 1. The gas mixing device can be fixedly connected with the top wall of the reactor shell 1. The top wall can be the support of the gas mixing device.

該氣體混合裝置具有圓柱形殼體，其中底部20及與底部20相對佈置之頂部17皆呈圓盤形。該氣體混合裝置之殼體具有柱形外壁18，其由第一管件形成。第二管件19位於內部且其下端與底部20固連。內管19之空腔連接排氣通道8。內管19之上緣懸空伸入外管18之空腔且形成一可被越過之邊緣。 The gas mixing device has a cylindrical casing, in which the bottom 20 and the top 17 arranged opposite to the bottom 20 are both disc-shaped. The housing of the gas mixing device has a cylindrical outer wall 18 which is formed by a first tube. The second tube 19 is located inside and its lower end is fixedly connected to the bottom 20. The cavity of the inner tube 19 is connected to the exhaust passage 8. The upper edge of the inner tube 19 extends into the cavity of the outer tube 18 and forms an edge that can be crossed.

透過與底部20鄰接且呈星型佈置之進入通道22可在不同周向位置上將不同製程氣體送入氣體混合裝置。在實施例中設有四個以均勻角分佈佈置之進入通道22，其各連接一氣體源21。氣體源21係為透過加熱來蒸發固態或液態起始材料之蒸發器。以此方式形成之蒸汽由被送入饋送通道23之載氣透過進入通道22送入氣體混合裝置。 Through the inlet channels 22 adjacent to the bottom 20 and arranged in a star shape, different process gases can be sent to the gas mixing device at different circumferential positions. In the embodiment, there are four inlet channels 22 arranged at a uniform angular distribution, each connected to a gas source 21. The gas source 21 is an evaporator that evaporates solid or liquid starting materials through heating. The steam formed in this way is sent from the carrier gas fed into the feeding passage 23 through the inlet passage 22 to the gas mixing device.

該氣體混合裝置具有第一混合室12，該第一混合室向外由外管18界定，向內由內管19界定。在此第一混合室12中設有數個上下佈置之氣體致偏元件13。氣體致偏元件13所採用之佈置方式能使由饋送通道22進入第一混合室12之單一氣流大體發生盤旋型流動，較佳為層流。第一氣體致偏元件13相對於進入通道22之排佈對稱軸係對稱佈置，從而使得離開進入通道22後穿過第一混合室12之單一氣流分別具有相似之流型。該流型為螺旋線 形流線，氣體沿此等流線由底部20朝頂部17方向，特定言之透過繞內管19環行多次而向上運動。由所有單一氣流組成之氣流於該處越過由管端形成之溢流障壁14。此氣流係為已在第一混合室12中經預混之氣流。 The gas mixing device has a first mixing chamber 12 which is delimited outwardly by an outer tube 18 and inwardly by an inner tube 19. In this first mixing chamber 12, a plurality of gas deflecting elements 13 arranged above and below are provided. The arrangement of the gas deflecting element 13 enables the single gas flow entering the first mixing chamber 12 from the feed channel 22 to generally generate a spiral flow, preferably a laminar flow. The first gas deflecting elements 13 are arranged symmetrically with respect to the arrangement symmetry axis of the inlet channel 22, so that the single gas streams passing through the first mixing chamber 12 after leaving the inlet channel 22 have similar flow patterns, respectively. The flow pattern is spiral In the shape of a streamline, the gas moves from the bottom 20 toward the top 17 along the streamline, specifically by moving around the inner tube 19 multiple times to move upward. The airflow composed of all the single airflows crosses the overflow barrier 14 formed by the pipe ends there. This airflow is the airflow that has been premixed in the first mixing chamber 12.

該預混氣流在溢流障壁14區域偏轉180度，而後由頂部17朝底部20方向穿過由內管19形成之第二混合室15。在第二混合室15中設有第二氣體致偏元件16，其以能引發渦旋之方式進行構建與佈置。例如，氣體致偏元件16可具有氣體中斷邊緣，其後面可形成渦流。氣體致偏元件16可為流動障礙物。故此，第一氣流在第二混合室15中打旋。以此方式形成之第二渦動氣流包含全部單一氣流之氣體，其透過排氣通道8離開第二混合室15之底部20並進入進氣機構5之氣體分配容積7。載氣如此這般被送入氣體源21或進入通道22，使得進入通道22通往第一混合室12之出口截面上的平均氣體速度為同一氣體速度。故此，來自於每個進入通道22之氣體皆以同一平均流速流入混合室12。 The premixed gas flow is deflected 180 degrees in the area of the overflow barrier 14 and then passes through the second mixing chamber 15 formed by the inner tube 19 from the top 17 toward the bottom 20. A second gas deflecting element 16 is provided in the second mixing chamber 15, which is constructed and arranged in such a way as to induce vortex. For example, the gas deflecting element 16 may have a gas interrupting edge, behind which a vortex may be formed. The gas deflecting element 16 may be a flow obstacle. Therefore, the first air flow swirls in the second mixing chamber 15. The second vortex flow formed in this way contains all the gas in a single flow, which leaves the bottom 20 of the second mixing chamber 15 through the exhaust passage 8 and enters the gas distribution volume 7 of the intake mechanism 5. The carrier gas is sent into the gas source 21 or the inlet channel 22 in such a way that the average gas velocity on the cross section of the outlet of the inlet channel 22 leading to the first mixing chamber 12 is the same gas velocity. Therefore, the gas from each inlet channel 22 flows into the mixing chamber 12 at the same average flow rate.

圖3及圖4示出第二實施例，其在一共用進氣平面內共設八個呈星型朝氣體混合裝置之中心延伸的進入通道22。位於徑向外側之第一混合室12具有氣體致偏元件13，藉該氣體致偏元件形成呈螺旋線形延伸之第一混合室12。第一混合室12之末端由溢流邊緣14形成，其連接柱形第二內側混合室15。在第一混合室12中更設有階梯形障礙物13'，其同樣可具有氣體致偏及氣體起旋功能。在第二混合室中亦可設置類似之氣流影響元件。 3 and 4 show a second embodiment, which has eight inlet channels 22 extending in a star shape toward the center of the gas mixing device in a common intake plane. The first mixing chamber 12 located on the radially outer side has a gas deflecting element 13, by which the first mixing chamber 12 extending in a spiral shape is formed. The end of the first mixing chamber 12 is formed by an overflow edge 14 which is connected to the cylindrical second inner mixing chamber 15. A stepped obstacle 13' is further provided in the first mixing chamber 12, which can also have gas deflection and gas swirling functions. Similar airflow influencing elements can also be provided in the second mixing chamber.

圖3及圖4示出具有不同截面面積之進入通道22。截面面積較大之進入通道22較佳被製程氣體及運送製程氣體之載 氣穿過。截面面積較小之進入通道22'較佳僅被稀釋用氣體即載氣穿過。不輸送製程氣體之附加進入通道22'可用來在混合室中產生渦旋。由此等附加進入通道22'饋送之載氣流或稀釋用氣流的有效徑長不必與進入通道22所饋送之製程氣體的有效徑長相適配。 3 and 4 show access channels 22 with different cross-sectional areas. The entry channel 22 having a larger cross-sectional area is preferably carried by the process gas and the process gas Qi through. The inlet channel 22' having a smaller cross-sectional area is preferably passed only by the dilution gas, that is, the carrier gas. The additional inlet channel 22', which does not deliver process gas, can be used to create a vortex in the mixing chamber. Therefore, the effective diameter of the carrier gas flow or dilution gas flow fed by the additional inlet channel 22 ′ does not have to match the effective diameter of the process gas fed by the inlet channel 22.

在圖5至圖7所示之第三實施例中，該混合裝置之殼體呈U形。該U形殼體之第一側邊形成管狀第一混合室12，設於第一平面之第一進入通道22的出口以及設於平行於該第一平面之第二平面之第二進入通道22'的出口位於該第一側邊上。此處亦共有八個各連接一氣體源之進入通道22、22'通入第一混合室12，該第一混合室具有第一氣體致偏元件13，其形式為形成於管件內壁之凸起。該等凸起為半圓形凸起，其自由直邊伸向形成第一混合室12之管件的中心。 In the third embodiment shown in FIGS. 5 to 7, the housing of the mixing device is U-shaped. The first side of the U-shaped shell forms a tubular first mixing chamber 12, an outlet of the first inlet channel 22 provided in the first plane and a second inlet channel 22 provided in the second plane parallel to the first plane The exit of 'is located on this first side. There are also eight inlet channels 22, 22' each connected to a gas source into the first mixing chamber 12, which has a first gas deflecting element 13 in the form of a protrusion formed on the inner wall of the pipe Up. The protrusions are semi-circular protrusions whose free straight edges extend toward the center of the pipe forming the first mixing chamber 12.

U形管件12、15之基邊形成溢流障壁14。該處同樣有半圓形氣體致偏元件24伸入U形管件之自由截面，該氣體致偏元件之自由邊穿過管件中心。 The bases of the U-shaped pipes 12 and 15 form an overflow barrier 14. There is also a semi-circular gas deflecting element 24 extending into the free section of the U-shaped pipe, the free edge of the gas deflecting element passing through the center of the pipe.

一平行於形成第一混合室12之管件側邊的管件側邊，其形成第二混合室15且在內部同樣具有氣體致偏元件16。第一混合室中之氣體致偏元件13的自由邊大體相平行分佈，橫向伸入氣流之氣體致偏板16的自由邊則相交叉分佈。 A tube side parallel to the tube side forming the first mixing chamber 12 forms the second mixing chamber 15 and also has a gas deflecting element 16 inside. The free edges of the gas deflecting elements 13 in the first mixing chamber are distributed substantially parallel, and the free edges of the gas deflecting plates 16 extending laterally into the gas flow are intersected.

在實施例中，氣體致偏元件13、15、24由一半周長連接管件內壁之扁平板件構成。該等板件橫向於流向延伸。 In the embodiment, the gas deflecting elements 13, 15, and 24 are composed of flat plate members whose half circumferences are connected to the inner wall of the pipe. The plates extend transverse to the flow direction.

圖8至圖11示出混合裝置之第四實施例，其具有八個設於一共用饋送平面之饋送通道22。一柱形殼體橫向於該饋送平面延伸。該殼體具有外柱體18及內柱體19。內柱體19以一自由邊 形成溢流障壁14。進氣通道22在軸向鄰近底部20之處通入向外由外管18界定之第一混合室12，該第一混合室僅在上部區域(即鄰近溢流邊緣14之區域)具有氣體致偏元件13。此等氣體致偏元件13導引沿軸向穿過第一混合室12之單一氣流沿一螺旋線形流動路徑流動，單一氣流在該流動路徑上到達頂部17下方之空間並於該處在越過溢流障壁14的同時偏轉180度。 8 to 11 show a fourth embodiment of the mixing device, which has eight feed channels 22 provided on a common feed plane. A cylindrical housing extends transverse to the feed plane. The housing has an outer cylinder 18 and an inner cylinder 19. Inner cylinder 19 with a free edge The overflow barrier 14 is formed. The intake passage 22 opens into the first mixing chamber 12 delimited outwardly by the outer tube 18 axially adjacent to the bottom 20, and the first mixing chamber has a gas-causing effect only in the upper region (ie, the region adjacent to the overflow edge 14).偏元件13. These gas deflecting elements 13 guide the single gas flow passing through the first mixing chamber 12 in the axial direction to flow along a spiral flow path. The single gas flow reaches the space below the top 17 on the flow path and crosses the overflow there The flow barrier 14 is simultaneously deflected 180 degrees.

內側第二混合室15具有數個沿流向相繼佈置之氣體致偏元件16。此等氣體致偏元件係為能使氣體發生多級偏轉之彎曲扁平件。該等扁平件固定於內管19之內壁且能使穿過內側混合室15之氣流打旋，此氣流沿該柱體結構之軸向經排氣通道8離開第二混合室15。氣體致偏元件16採用相同構造。其可為相抵接(即附接於一起)之附接件。該等附接件所採用之構造使其能抵靠於管件19之內壁。 The inner second mixing chamber 15 has several gas deflecting elements 16 arranged one after another in the flow direction. These gas deflecting elements are curved flat pieces capable of deflecting the gas in multiple stages. The flat members are fixed to the inner wall of the inner tube 19 and can swirl the airflow passing through the inner mixing chamber 15. This airflow leaves the second mixing chamber 15 through the exhaust passage 8 along the axial direction of the column structure. The gas deflecting element 16 adopts the same configuration. It can be an attachment that abuts (ie, attaches together). These attachments are constructed so that they can abut against the inner wall of the tube 19.

此處亦設有不同之進入通道。直徑較大之進入通道22被製程氣體及運送製程氣體之載氣穿過，直徑較小之附加進入通道22'則僅被載氣即稀釋用氣體穿過。 There are also different access routes here. The inlet channel 22 with a larger diameter is passed through by the process gas and the carrier gas carrying the process gas, and the additional inlet channel 22' with a smaller diameter is only passed by the carrier gas, that is, the dilution gas.

圖12至圖17所示之第五實施例總共具有八個呈星型設於一進入平面之進入通道22。進入通道22採用相同構造且具有沿流向逐步增大之內徑。此外，進入通道22尚透過橫向通道25分別連接相鄰之進入通道22。 The fifth embodiment shown in FIGS. 12 to 17 has a total of eight access channels 22 star-shaped on an access plane. The inlet channel 22 adopts the same configuration and has an inner diameter that gradually increases along the flow direction. In addition, the inlet channels 22 are connected to adjacent inlet channels 22 through lateral channels 25 respectively.

在此，兩同軸佈置之管件18、19同樣形成外側第一混合室12及內側第二混合室15，其中透過進入通道22由下方為外側第一混合室12饋送待混合氣體。在第一混合室12中設有能使氣流沿周向偏轉之第一氣體致偏元件13。氣流可在致偏元件13作用 下沿不同周向發生多重偏轉，例如，氣流在第一混合室12之第一豎向區段以順時針方向穿過第一混合室12，並在隨後之豎向區段以逆時針方向穿過第一混合室12。在該順時針或逆時針流體運動上疊加有柱形管件軸向之流動分量，從而使得來自於進入通道22之單一氣流在第一混合室12內部經預混後到達第一混合室12之上部區段並於該處在越過兩相對佈置之溢流障壁14的同時偏轉180度而流入中央第二混合室15。 Here, the two coaxially arranged pipes 18 and 19 also form an outer first mixing chamber 12 and an inner second mixing chamber 15, wherein the outer first mixing chamber 12 is fed with gas to be mixed from below through the inlet channel 22. A first gas deflecting element 13 capable of deflecting the gas flow in the circumferential direction is provided in the first mixing chamber 12. Airflow can act on the deflector element 13 Multiple deflections occur in different circumferential directions, for example, the airflow passes through the first mixing chamber 12 in the first vertical section of the first mixing chamber 12 in a clockwise direction, and passes through the first counterclockwise section in the subsequent vertical section. One mixing chamber 12. On the clockwise or counterclockwise fluid movement, the axial flow component of the cylindrical tube is superimposed, so that the single gas flow from the inlet channel 22 reaches the upper part of the first mixing chamber 12 after premixing inside the first mixing chamber 12 At this point, the section deflects 180 degrees and flows into the central second mixing chamber 15 while crossing the two oppositely arranged overflow barriers 14.

在中央第二混合室15中設有第二氣體致偏元件16，該等氣體致偏元件仍由可具有彎曲結構之扁平材料構成且能使穿過第二混合室15之氣體打旋。 A second gas deflecting element 16 is provided in the central second mixing chamber 15, and these gas deflecting elements are still composed of a flat material that can have a curved structure and can swirl the gas passing through the second mixing chamber 15.

在前述所有實施例中，該等氣體致偏元件13、16皆被構造並佈置成使得即便在考慮進入通道22之長度情況下，每個單一氣流在氣體源21與進氣機構5間皆大體流經相同之有效徑長。 In all the foregoing embodiments, the gas deflecting elements 13, 16 are constructed and arranged so that even considering the length of the inlet channel 22, each single gas flow is generally between the gas source 21 and the air inlet mechanism 5 Flow through the same effective diameter length.

氣體源21之饋送通道23分別被饋送一定之載氣流量。該載氣流量之大小使得該等氣體在混合裝置內部(即在其由氣體源21流動至進氣機構5期間)具有相同之停留時間。各停留時間之差不應超過10毫秒，其中總停留時間較佳為最長100毫秒。較佳在公差範圍內調節進入通道22中之氣體流動，使得氣體以相同之平均流速進入混合室並在相同時間內穿過混合室或整個氣體混合裝置。最佳者為，各停留時間之差小於10毫秒，例如至多僅相差2毫秒或5毫秒。 The feed channels 23 of the gas source 21 are respectively fed with a certain carrier gas flow rate. The size of the carrier gas flow makes the gases have the same residence time inside the mixing device (that is, during its flow from the gas source 21 to the intake mechanism 5). The difference between each residence time should not exceed 10 milliseconds, and the total residence time is preferably up to 100 milliseconds. The gas flow into the channel 22 is preferably adjusted within tolerances so that the gas enters the mixing chamber at the same average flow rate and passes through the mixing chamber or the entire gas mixing device at the same time. The best one is that the difference between the residence times is less than 10 milliseconds, for example, the difference is at most only 2 milliseconds or 5 milliseconds.

氣體混合可在大氣壓力下進行。但較佳在介於1mbar與500mbar間之壓力範圍內進行氣體混合。氣體源21與進氣機構5間之壓力差小於1mbar，較佳小於0.2mbar。該氣體混合裝置之 直徑及高度介於200mm與700mm間。 Gas mixing can be performed at atmospheric pressure. However, the gas mixing is preferably carried out in a pressure range between 1 mbar and 500 mbar. The pressure difference between the gas source 21 and the intake mechanism 5 is less than 1 mbar, preferably less than 0.2 mbar. The gas mixing device The diameter and height are between 200mm and 700mm.

前述實施方案係用於說明本申請整體所包含之發明，該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之進一步方案：一種供氣裝置，其特徵在於，該等單一氣流在該等氣體源21與該進氣機構5間具有相同之有效徑長。 The foregoing embodiments are used to illustrate the inventions included in the entire application, and these inventions independently constitute a further solution relative to the prior art through at least the following feature combinations: an air supply device, characterized in that the single gas flows are The gas source 21 and the air intake mechanism 5 have the same effective diameter length.

一種供氣裝置，其特徵在於，該等進入通道22設於一進入平面內且特定言之對準一共用中心，及/或該排氣通道8沿橫向於該進入平面之方向延伸，及/或氣體越過該溢流障壁14時偏轉180°。 An air supply device, characterized in that the inlet passages 22 are provided in an entry plane and are specifically aligned with a common center, and/or the exhaust passage 8 extends in a direction transverse to the entry plane, and/or Or the gas deflects 180° when passing over the overflow barrier 14.

一種供氣裝置，其特徵在於，該第一混合室12為預混室，包括較佳能使相關單一氣流層流變向(laminare Richtungsänderung)之第一氣體致偏元件13，及/或該第二混合室15為渦旋室，包括用於在該第二混合室15中產生第二渦動氣流之第二氣體致偏元件16。 A gas supply device, characterized in that the first mixing chamber 12 is a premixing chamber, which includes a first gas deflecting element 13 which can preferably change the laminar direction of the relevant single gas flow (laminare Richtungsänderung), and/or the second The mixing chamber 15 is a vortex chamber and includes a second gas deflecting element 16 for generating a second vortex flow in the second mixing chamber 15.

一種供氣裝置，其特徵在於，該等第一或第二氣體致偏元件12、13沿流向分多級相繼佈置。 A gas supply device is characterized in that the first or second gas deflecting elements 12 and 13 are successively arranged in multiple stages along the flow direction.

一種供氣裝置，其特徵在於，該第一及第二混合室12、15由通流方向相反之同心管件18、19構成。 An air supply device, characterized in that the first and second mixing chambers 12, 15 are composed of concentric pipe members 18, 19 having opposite flow directions.

一種供氣裝置，其特徵在於，該第一或第二混合室12、15之直徑小於該第一或第二混合室12、15之軸向高度。 An air supply device characterized in that the diameter of the first or second mixing chamber 12, 15 is smaller than the axial height of the first or second mixing chamber 12, 15.

一種供氣裝置，其特徵在於，由此二混合室12、15及該等氣體源21構成之供氣裝置沿豎向設於處理室2上方，特定言之直接設於反應器殼體1之頂壁上。 A gas supply device, characterized in that the gas supply device constituted by the two mixing chambers 12, 15 and the gas sources 21 is arranged vertically above the processing chamber 2, specifically in the reactor housing 1 directly On the top wall.

一種方法，其特徵在於，該等氣體在該氣體源21與該進氣機構(5)間之路徑上的有效停留時間至多相差十毫秒。 A method characterized in that the effective residence time of the gases on the path between the gas source 21 and the intake mechanism (5) differs by at most ten milliseconds.

一種方法，其特徵在於，該等氣體在該氣體源21與該進氣機構5間之路徑上的停留時間短於一百毫秒。 A method characterized in that the residence time of the gases on the path between the gas source 21 and the intake mechanism 5 is shorter than one hundred milliseconds.

一種方法，其特徵在於，設於該第一混合室12中之該等第一氣體致偏元件13特定言之使該等單一氣流發生層流偏轉，及/或設於該第二混合室15中之該等第二氣體致偏元件16特定言之產生渦動第二氣流。 A method characterized in that the first gas deflecting elements 13 provided in the first mixing chamber 12 specifically deflect the laminar flow of the single gas flows, and/or are provided in the second mixing chamber 15 The second gas deflecting elements 16 in particular generate a vortex second gas flow.

一種方法，其特徵在於，調節該等進入通道22中之氣體流動，使得該等單一氣流以相同之平均氣體速度離開相關進入通道22。 A method characterized by adjusting the gas flow in the inlet channels 22 so that the single gas streams leave the relevant inlet channels 22 at the same average gas velocity.

所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容，該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明，其目的主要在於在該等請求項基礎上進行分案申請。 All the disclosed features (as a single feature or a combination of features) are the essence of the invention. Therefore, the disclosure content of this application also includes all the contents disclosed in the relevant/attached priority files (copies of prior applications), and the features described in these files are also included in the scope of the patent application of this application. The auxiliary items describe the characteristics of the improvement scheme of the present invention with respect to the prior art based on their characteristics, and their main purpose is to make a divisional application on the basis of these request items.

1‧‧‧反應器殼體 1‧‧‧Reactor shell

2‧‧‧處理室 2‧‧‧Processing room

3‧‧‧基座 3‧‧‧Dock

4‧‧‧基板 4‧‧‧ substrate

5‧‧‧進氣機構 5‧‧‧ Intake mechanism

6‧‧‧排氣孔 6‧‧‧ vent

7‧‧‧氣體分配容積 7‧‧‧ gas distribution volume

8‧‧‧排氣通道 8‧‧‧Exhaust channel

9‧‧‧排氣機構 9‧‧‧Exhaust mechanism

10‧‧‧真空泵 10‧‧‧Vacuum pump

11‧‧‧氣體混合裝置 11‧‧‧Gas mixing device

12‧‧‧第一混合室 12‧‧‧ First Mixing Room

13‧‧‧第一氣體致偏元件 13‧‧‧First gas deflection element

14‧‧‧溢流障壁 14‧‧‧Overflow barrier

15‧‧‧第二混合室 15‧‧‧Second mixing room

16‧‧‧第二氣體致偏元件 16‧‧‧Second gas deflection element

17‧‧‧頂部 17‧‧‧Top

18‧‧‧柱面壁 18‧‧‧Cylinder wall

19‧‧‧管件 19‧‧‧Pipe fittings

20‧‧‧底部 20‧‧‧Bottom

21‧‧‧氣體源 21‧‧‧Gas source

22‧‧‧進入通道 22‧‧‧Enter the passage

23‧‧‧饋送通道 23‧‧‧Feeding channel

Claims (14)

一種供氣裝置，包括：呈星型圍繞中心佈置且分別連接一氣體源(21)之進入通道(22)，用於將分別由一氣體源(21)提供之單一氣流送入呈環柱形圍繞該中心佈置之第一混合室(12)，其中在該第一混合室(12)中，藉由一或數個第一氣體致偏元件(13)使該等單一氣流發生單一偏轉或多重偏轉並將該等單一氣流混合；溢流障壁(14)，由所有單一氣流組成之第一氣流在偏轉180°之情況下越過該溢流障壁而由該第一混合室(12)進入設於該第一混合室(12)內側之第二混合室(15)，在該第二混合室中，藉由第二氣體致偏元件(16)使該第一氣流發生單一偏轉或多重偏轉；及設於該中心之排氣通道(8)，用於將該氣流由該第二混合室(15)排出至CVD或PVD塗佈裝置(1)之進氣機構(5)，其特徵在於，由此二混合室(12、15)及該等氣體源(21)構成之該供氣裝置沿豎向設於處理室(2)上方，第一及第二混合室(12、15)分別包含第一及第二氣體致偏元件(13、16)，以及排氣通道(8)位在第二混合室(15)之中心且與位在氣體混合裝置(11)垂直下方的進氣機構(5)連接。 A gas supply device, comprising: an inlet channel (22) arranged in a star shape around the center and respectively connected to a gas source (21), for feeding a single gas flow respectively provided by a gas source (21) into a circular cylindrical shape A first mixing chamber (12) arranged around the center, wherein in the first mixing chamber (12), the single gas flow is single deflected or multiplexed by one or several first gas deflecting elements (13) Deflect and mix the single air flows; the overflow barrier (14), the first air flow composed of all single air flows over the overflow barrier when deflected by 180° and enters the first mixing chamber (12) A second mixing chamber (15) inside the first mixing chamber (12), in which a single or multiple deflection of the first gas flow is caused by a second gas deflection element (16); and The exhaust channel (8) provided in the center is used to discharge the gas flow from the second mixing chamber (15) to the air intake mechanism (5) of the CVD or PVD coating device (1). These two mixing chambers (12, 15) and the gas supply device constituted by the gas sources (21) are vertically arranged above the processing chamber (2), and the first and second mixing chambers (12, 15) respectively include The first and second gas deflecting elements (13, 16) and the exhaust passage (8) are located in the center of the second mixing chamber (15) and are vertically below the gas mixing device (11) air intake mechanism (5) )connection. 如申請專利範圍第1項之供氣裝置，其中，該等單一氣流在該等氣體源(21)與該進氣機構(5)間具有相同之有效徑長。 For example, in the gas supply device of claim 1, the single gas flows have the same effective diameter length between the gas source (21) and the air intake mechanism (5). 如申請專利範圍第1項之供氣裝置，其中，該等進入通道(22)設於一進入平面內且對準一共用中心，其中該排氣通道(8)沿橫向於該進入平面之方向延伸。 A gas supply device as claimed in item 1 of the patent scope, wherein the inlet channels (22) are arranged in an inlet plane and are aligned with a common center, wherein the exhaust channel (8) is transverse to the inlet plane extend. 如申請專利範圍第1項之供氣裝置，其中，該第一混合室(12) 為預混室，包括能使相關單一氣流層流變向之第一氣體致偏元件(13)，並且該第二混合室(15)為渦旋室，包括該等用於在該第二混合室(15)中產生第二渦動氣流之第二氣體致偏元件(16)。 The gas supply device as claimed in item 1 of the patent scope, wherein the first mixing chamber (12) It is a premixing chamber, which includes a first gas deflecting element (13) capable of reversing the laminar flow of the relevant single gas flow, and the second mixing chamber (15) is a vortex chamber, including these used for mixing in the second The second gas deflecting element (16) in the chamber (15) which generates the second vortex flow. 如申請專利範圍第1項之供氣裝置，其中，該等第一或第二氣體致偏元件(12、13)沿流向分多級相繼佈置。 For example, the gas supply device according to item 1 of the patent application, wherein the first or second gas deflecting elements (12, 13) are successively arranged in multiple stages along the flow direction. 如申請專利範圍第1項之供氣裝置，其中，該第一及第二混合室(12、15)由通流方向相反之同心管件(18、19)構成。 For example, in the gas supply device of claim 1, the first and second mixing chambers (12, 15) are composed of concentric pipes (18, 19) with opposite flow directions. 如申請專利範圍第1項之供氣裝置，其中，該第一或第二混合室(12、15)之直徑小於該第一或第二混合室(12、15)之軸向高度。 For example, in the gas supply device of claim 1, the diameter of the first or second mixing chamber (12, 15) is smaller than the axial height of the first or second mixing chamber (12, 15). 如申請專利範圍第1項之供氣裝置，其中，該等氣體源(21)及該等混合室(12、15)直接設於反應器殼體(1)之頂壁上。 For example, the gas supply device according to item 1 of the patent application, wherein the gas sources (21) and the mixing chambers (12, 15) are directly provided on the top wall of the reactor housing (1). 如申請專利範圍第1項之供氣裝置，其中，具有用於導入稀釋用氣流之附加進氣通道(22')。 An air supply device as claimed in item 1 of the patent scope, which has an additional air inlet channel (22') for introducing a gas stream for dilution. 一種將製程氣體供給至CVD或PVD塗佈裝置之進氣機構(9)的方法，包括以下步驟：分別用一氣體源(21)提供數種製程氣體；將每種製程氣體以單一氣流之形式由相關氣體源(21)分別透過一進入通道(22)與其他單一氣流分開地送入第一混合室(12)；在該第一混合室(12)中，藉由第一氣體致偏元件(13)使該等單一氣流發生偏轉並將該等單一氣流混合；由所有單一氣體組成之第一氣流越過溢流障壁(14)而進入第二混合室(15)；藉由第二氣體致偏元件(16)使該氣流發生偏轉；將由所有單一氣流組成之氣流由排氣通道(8)排出至該進氣機構 (5)，其特徵在於，該等氣體在該氣體源(21)與該進氣機構(5)間之路徑上的有效停留時間至多相差十毫秒，第一及第二混合室(12、15)分別包含第一及第二氣體致偏元件(13、16)，以及排氣通道(8)位在第二混合室(15)之中心且與位在氣體混合裝置(11)垂直下方的進氣機構(5)連接。 A method for supplying process gas to the gas inlet mechanism (9) of a CVD or PVD coating device, including the following steps: providing a plurality of process gases with a gas source (21); each process gas in the form of a single gas flow The relevant gas source (21) is separately sent into the first mixing chamber (12) through an inlet channel (22) separately from other single gas flows; in the first mixing chamber (12), the first gas deflecting element (13) deflect and mix the single gas flows; the first gas flow composed of all the single gases crosses the overflow barrier (14) and enters the second mixing chamber (15); The deflector element (16) deflects the airflow; the airflow composed of all single airflows is discharged from the exhaust channel (8) to the air intake mechanism (5), characterized in that the effective residence time of the gases on the path between the gas source (21) and the intake mechanism (5) is at most ten milliseconds different, and the first and second mixing chambers (12, 15) ) Includes the first and second gas deflection elements (13, 16), and the exhaust channel (8) is located in the center of the second mixing chamber (15) and is located vertically below the gas mixing device (11). The gas mechanism (5) is connected. 如申請專利範圍第10項之方法，其中，該等氣體在該氣體源(21)與該進氣機構(5)間之路徑上的停留時間短於一百毫秒。 For example, the method of claim 10, wherein the residence time of the gases on the path between the gas source (21) and the intake mechanism (5) is less than one hundred milliseconds. 如申請專利範圍第10項之方法，其中，設於該第一混合室(12)中之該等第一氣體致偏元件(13)使該等單一氣流發生層流偏轉，及/或設於該第二混合室(15)中之該等第二氣體致偏元件(16)產生渦動第二氣流。 For example, the method of claim 10, wherein the first gas deflecting elements (13) provided in the first mixing chamber (12) deflect the laminar flow of the single gas flows, and/or The second gas deflecting elements (16) in the second mixing chamber (15) generate a swirling second gas flow. 如申請專利範圍第10項之方法，其中，調節該等進入通道(22)中之氣體流動，使得該等單一氣流以相同之平均氣體速度離開相關進入通道(22)。 As in the method of claim 10, the gas flow in the inlet channels (22) is adjusted so that the single gas streams leave the relevant inlet channel (22) at the same average gas velocity. 如申請專利範圍第10項之方法，其中，透過附加進入通道(22')饋送稀釋用氣流。 A method as claimed in item 10 of the patent scope, wherein the dilution air flow is fed through an additional inlet channel (22').
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