TWI693639B - Substrate processing method and substrate processing apparatus - Google Patents
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/16—Drying solid materials or objects by processes not involving the application of heat by contact with sorbent bodies, e.g. absorbent mould; by admixture with sorbent materials
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B9/00—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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Abstract
基板處理方法係使具有圖案形成面之基板乾燥，該圖案形成面形成有具有凹部之圖案。基板處理方法包含：犧牲層形成製程，其係於上述圖案形成面形成仿照上述圖案之表面之犧牲層；填充層形成製程，其係於形成有上述犧牲層之狀態下，在上述圖案形成面形成填埋上述圖案之上述凹部之填充層；氣化製程，其係於形成有上述填充層之狀態下，使上述犧牲層氣化；及剝離製程，其係於使上述犧牲層氣化之後，將上述填充層自上述圖案形成面剝離。The substrate processing method is to dry a substrate having a pattern forming surface on which a pattern having concave portions is formed. The substrate processing method includes: a sacrificial layer forming process, which forms a sacrificial layer imitating the surface of the pattern on the pattern forming surface; and a filling layer forming process, which is formed on the pattern forming surface with the sacrificial layer formed A filling layer that fills the concave portion of the pattern; a vaporization process, which is to vaporize the sacrificial layer in the state where the filler layer is formed; and a peeling process, which is to vaporize the sacrificial layer, then The filling layer is peeled from the pattern forming surface.
Description
本發明係關於一種對基板進行處理之基板處理方法及基板處理裝置。成為處理對象之基板例如包含半導體晶圓、液晶顯示裝置用基板、有機EL(Electroluminescence，電致發光)顯示裝置等FPD(Flat Panel Display，平板顯示器)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、太陽電池用基板等基板。The invention relates to a substrate processing method and a substrate processing device for processing substrates. The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, organic EL (Electroluminescence) display devices, and other FPD (Flat Panel Display) substrates, optical disc substrates, magnetic disc substrates, Substrates for magneto-optical disc substrates, photomask substrates, ceramic substrates, solar cell substrates, etc.
於半導體元件之製造中，在基板之表面形成電路圖案。形成有電路圖案之基板之表面於利用藥液進行清洗之後被乾燥。詳細而言，於將藥液置換為沖洗液之後，使基板以高速旋轉而自基板之表面去除沖洗液，藉此使基板之表面乾燥。但是，有無法去除進入至電路圖案內之凹部之沖洗液之虞。因此，有產生乾燥不良之虞。進入至凹部之沖洗液之液面(空氣與液體之界面)形成於凹部。因此，沖洗液之表面張力作用於液面與圖案之接觸位置。於該表面張力較大之情形時，容易引起圖案之坍塌。In the manufacture of semiconductor elements, circuit patterns are formed on the surface of the substrate. The surface of the substrate on which the circuit pattern is formed is dried after being cleaned with a chemical solution. In detail, after replacing the chemical solution with the rinse solution, the substrate is rotated at a high speed to remove the rinse solution from the surface of the substrate, thereby drying the surface of the substrate. However, there is a possibility that the rinse liquid that has entered the concave portion in the circuit pattern cannot be removed. Therefore, there is a risk of drying defects. The liquid surface (interface of air and liquid) of the rinsing liquid entering the recess is formed in the recess. Therefore, the surface tension of the rinse liquid acts on the contact position of the liquid surface and the pattern. When the surface tension is large, it is easy to cause the pattern to collapse.
因此，於下述專利文獻1中，提出一種基板處理，其係於利用填充劑置換基板上之沖洗液後，使填充劑固化之後，藉由電漿處理去除填充劑，藉此使基板乾燥。
[先前技術文獻]
[專利文獻]Therefore, in the following
[專利文獻1]日本專利特開2011-124313號公報[Patent Document 1] Japanese Patent Laid-Open No. 2011-124313
[發明所欲解決之問題] 但是，於進行電漿處理之情形時，需要複雜之製程，故而有基板之乾燥所需之時間較長之虞。進而，有半導體元件之生產性降低之虞。[Problems to be solved by the invention] However, in the case of plasma processing, a complicated process is required, so there is a possibility that the time required for drying the substrate is longer. Furthermore, there is a possibility that the productivity of the semiconductor element may decrease.
因此，本發明之目的在於提供一種可縮短基板之乾燥所需之時間之基板處理方法及基板處理裝置。 [解決問題之技術手段]Therefore, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus that can shorten the time required for substrate drying. [Technical means to solve the problem]
本發明之一實施形態提供一種基板處理方法，其係使具有圖案形成面之基板乾燥者，該圖案形成面形成有具有凹部之圖案，且該基板處理方法包含：犧牲層形成製程，其係於上述圖案形成面形成仿照上述圖案之表面之犧牲層；填充層形成製程，其係於上述圖案形成面形成填埋形成有上述犧牲層之上述圖案形成面之上述圖案之上述凹部填埋的填充層；氣化製程，其係於形成有上述填充層之狀態下，使上述犧牲層氣化；及剝離製程，其係於使上述犧牲層氣化之後，將上述填充層自上述圖案形成面剝離。An embodiment of the present invention provides a substrate processing method which dries a substrate having a pattern-forming surface with a pattern having recesses, and the substrate processing method includes: a sacrificial layer forming process, which is based on The pattern forming surface forms a sacrificial layer imitating the surface of the pattern; a filling layer forming process is formed on the pattern forming surface to fill a filling layer filled with the recess of the pattern of the pattern forming surface on which the sacrificial layer is formed A gasification process, which is to vaporize the sacrificial layer in the state where the filling layer is formed; and a peeling process, which is to strip the filling layer from the pattern-forming surface after vaporizing the sacrificial layer.
根據該方法，於形成了仿照圖案之表面之犧牲層之後，圖案之凹部被填充層填埋。因此，填充層係以與圖案之表面之間介置有犧牲層之狀態形成，而非以密接於圖案之表面之狀態形成。其後，藉由於形成有填充層之狀態下使犧牲層氣化，犧牲層自圖案之表面與填充層之間消失。因此，與未形成犧牲層而利用填充層填埋圖案之凹部之情形相比，圖案與填充層之密接度變低。因此，可於使犧牲層氣化之後，容易地將填充層自圖案形成面剝離。其結果，可縮短基板之乾燥所需之時間。According to this method, after the sacrificial layer imitating the surface of the pattern is formed, the concave portion of the pattern is filled with the filling layer. Therefore, the filling layer is formed in a state where a sacrificial layer is interposed between the surface of the pattern and not in a state of being in close contact with the surface of the pattern. Thereafter, by vaporizing the sacrificial layer with the filling layer formed, the sacrificial layer disappears from between the surface of the pattern and the filling layer. Therefore, the degree of adhesion between the pattern and the filling layer becomes lower than in the case where the recessed portion of the pattern is filled with the filling layer without forming the sacrificial layer. Therefore, after vaporizing the sacrificial layer, the filling layer can be easily peeled off from the patterned surface. As a result, the time required for drying the substrate can be shortened.
於本發明之一實施形態中，上述氣化製程包含間隙形成製程，該間隙形成製程係藉由使上述犧牲層氣化，而於上述圖案之表面與上述填充層之間形成間隙。因此，藉由使犧牲層氣化，可進一步降低圖案與填充層之密接度。因此，可更容易地自圖案形成面剝離填充層。In one embodiment of the present invention, the vaporization process includes a gap formation process that forms a gap between the surface of the pattern and the filling layer by vaporizing the sacrificial layer. Therefore, by vaporizing the sacrificial layer, the adhesion between the pattern and the filling layer can be further reduced. Therefore, the filling layer can be more easily peeled off from the patterned surface.
於本發明之一實施形態中，上述犧牲層形成製程包含犧牲層形成液供給製程，該犧牲層形成液供給製程係供給與上述圖案發生反應而於上述圖案形成面形成上述犧牲層之犧牲層形成液。因此，藉由對圖案形成面供給犧牲層形成液，可使犧牲層形成液進入至凹部之各個角落。因此，可確實地形成仿照圖案之表面之犧牲層。In one embodiment of the present invention, the sacrificial layer forming process includes a sacrificial layer forming liquid supply process that supplies a sacrificial layer that reacts with the pattern to form the sacrificial layer on the pattern forming surface liquid. Therefore, by supplying the sacrificial layer forming liquid to the pattern forming surface, the sacrificial layer forming liquid can be allowed to enter each corner of the concave portion. Therefore, a sacrificial layer that imitates the surface of the pattern can be reliably formed.
於本發明之一實施形態中，上述基板處理方法進而包含去除液供給製程，該去除液供給製程係於形成上述犧牲層之後且上述填充層形成製程執行前，將自上述圖案形成面去除上述犧牲層形成液之去除液供給至上述圖案形成面。因此，可於形成填充層之前自圖案形成面去除無助於犧牲層之形成之犧牲層形成液。因此，可減小犧牲層形成液對填充層之形成帶來之影響。In one embodiment of the present invention, the substrate processing method further includes a removal liquid supply process that removes the sacrifice from the patterned surface after forming the sacrificial layer and before performing the filling layer forming process The removal liquid of the layer forming liquid is supplied to the pattern forming surface. Therefore, the sacrificial layer forming liquid that does not contribute to the formation of the sacrificial layer can be removed from the pattern forming surface before the filling layer is formed. Therefore, the influence of the sacrificial layer forming liquid on the formation of the filling layer can be reduced.
於本發明之一實施形態中，上述氣化製程包含加熱氣化製程，該加熱氣化製程係介隔上述基板加熱上述犧牲層，藉此使上述犧牲層氣化。因此，可利用將基板加熱之簡單之方法，使犧牲層氣化。In one embodiment of the present invention, the gasification process includes a heating gasification process that heats the sacrificial layer via the substrate, thereby vaporizing the sacrificial layer. Therefore, a simple method of heating the substrate can be used to vaporize the sacrificial layer.
於本發明之一實施形態中，上述填充層形成製程包含：填充製程，其係藉由對上述圖案形成面供給填充層形成液而將上述填充層形成液填充於上述凹部；及固化製程，其使上述圖案形成面上之上述填充層形成液固化而形成上述填充層。In one embodiment of the present invention, the filling layer forming process includes a filling process in which the filling layer forming liquid is filled in the concave portion by supplying a filling layer forming liquid to the pattern forming surface; and a curing process, which The filling layer forming liquid on the pattern forming surface is cured to form the filling layer.
根據該方法，藉由對圖案形成面供給填充層形成液，可使填充層形成液進入至凹部之各個角落。藉此，可利用填充層形成液置換殘留於凹部之液體成分。於在該狀態下使填充層形成液固化而形成填充層之後，將填充層剝離，藉此可使基板良好地乾燥。According to this method, by supplying the filling layer forming liquid to the pattern forming surface, the filling layer forming liquid can enter each corner of the concave portion. Thereby, the liquid component remaining in the concave portion can be replaced with the filling layer forming liquid. After the filling layer forming liquid is cured in this state to form the filling layer, the filling layer is peeled off, whereby the substrate can be dried well.
於本發明之一實施形態中，上述基板處理方法進而包含將上述基板保持為水平之基板保持製程。而且，上述填充層形成製程包含旋轉排除製程，該旋轉排除製程係於上述凹部填充有上述填充層形成液之後且上述固化製程執行前，使被保持為水平之上述基板繞沿著鉛直方向之旋轉軸線旋轉，藉此自上述圖案形成面排除上述填充層形成液之一部分。In one embodiment of the present invention, the substrate processing method further includes a substrate holding process for holding the substrate horizontally. Moreover, the filling layer forming process includes a spin-out process, which rotates the substrate held horizontally around the vertical direction after the concave portion is filled with the fill layer forming liquid and before the curing process is performed The axis rotates, thereby excluding a part of the filling layer forming liquid from the pattern forming surface.
根據該方法，利用因基板之旋轉而產生之離心力，自圖案形成面排除填充層形成液之一部分。因此，圖案形成面上之填充層形成液之量減少。因此，可縮短填充層形成液之固化所需之時間。According to this method, the centrifugal force generated by the rotation of the substrate is used to exclude a part of the filling layer forming liquid from the pattern forming surface. Therefore, the amount of the filling layer forming liquid on the pattern forming surface is reduced. Therefore, the time required for curing of the filling layer forming liquid can be shortened.
於本發明之一實施形態中，上述固化製程包含加熱固化製程，該加熱固化製程係介隔上述基板加熱上述圖案形成面上之上述填充層形成液，藉此使上述圖案形成面上之上述填充層形成液固化。因此，可利用將基板加熱之簡單之方法，使填充層形成液固化而形成填充層。In one embodiment of the present invention, the curing process includes a heating and curing process that heats the filling layer forming liquid on the pattern forming surface via the substrate, thereby filling the filling on the pattern forming surface The layer forming liquid solidifies. Therefore, a simple method of heating the substrate can be used to solidify the filling layer forming liquid to form the filling layer.
於本發明之一實施形態中，上述氣化製程包含加熱氣化製程，該加熱氣化製程係介隔上述基板加熱上述犧牲層，藉此使上述犧牲層氣化。而且，上述填充層形成製程包含：填充製程，其係將固化溫度較上述犧牲層之氣化溫度低之填充層形成液供給至上述圖案形成面，藉此將上述填充層形成液填充於上述凹部；及加熱固化製程，其係介隔上述基板加熱上述圖案形成面上之上述填充層形成液，藉此使上述圖案形成面上之上述填充層形成液固化而形成上述填充層。In one embodiment of the present invention, the gasification process includes a heating gasification process that heats the sacrificial layer via the substrate, thereby vaporizing the sacrificial layer. Furthermore, the filling layer forming process includes a filling process which supplies a filling layer forming liquid with a curing temperature lower than the vaporization temperature of the sacrificial layer to the pattern forming surface, thereby filling the filling layer forming liquid into the concave portion And a heat curing process, which heats the filling layer forming liquid on the pattern forming surface via the substrate, thereby curing the filling layer forming liquid on the pattern forming surface to form the filling layer.
根據該方法，亦能利用將基板加熱之簡單之方法，使填充層形成液固化而形成填充層。並且，可使犧牲層氣化。又，填充層形成液之固化溫度較犧牲層之氣化溫度低，故而可防止於填充層形成液固化之前使犧牲層氣化。又，於藉由加熱使填充層形成液固化之後使犧牲層氣化，故而於犧牲層之加熱開始時，已藉由為了實現填充層形成液之固化而進行之加熱將犧牲層加熱。因此，可縮短用於犧牲層之氣化之加熱所需之時間。According to this method, a simple method of heating the substrate can also be used to solidify the filling layer forming liquid to form the filling layer. Also, the sacrificial layer can be vaporized. In addition, the solidification temperature of the filling layer forming liquid is lower than the vaporization temperature of the sacrificial layer, so it is possible to prevent the sacrificial layer from being vaporized before the filling layer forming liquid solidifies. In addition, the sacrificial layer is vaporized after the filling layer forming liquid is cured by heating. Therefore, when the heating of the sacrificial layer is started, the sacrificial layer has been heated by heating to achieve the solidification of the filling layer forming liquid. Therefore, the time required for the heating of the gasification of the sacrificial layer can be shortened.
又，藉由對圖案形成面供給填充層形成液，可使填充層形成液進入至凹部之各個角落。藉此，可利用填充層形成液置換殘留於凹部之液體成分。於在該狀態下使填充層形成液固化而形成填充層之後，將填充層剝離，藉此可使基板良好地乾燥。In addition, by supplying the filling layer forming liquid to the pattern forming surface, the filling layer forming liquid can enter each corner of the concave portion. Thereby, the liquid component remaining in the concave portion can be replaced with the filling layer forming liquid. After the filling layer forming liquid is cured in this state to form the filling layer, the filling layer is peeled off, whereby the substrate can be dried well.
於本發明之一實施形態中，提供一種基板處理裝置，其係使具有圖案形成面之基板乾燥者，該圖案形成面形成有具有凹部之圖案，且該基板處理裝置包含：犧牲層形成單元，其於上述圖案形成面形成仿照上述圖案之表面之犧牲層；填充層形成單元，其於形成有上述犧牲層之上述圖案形成面形成填埋上述圖案之上述凹部之填充層；氣化單元，其使形成有上述填充層之上述基板上之上述犧牲層氣化；及剝離單元，其自上述犧牲層經氣化之上述基板之上述圖案形成面將上述填充層剝離。In one embodiment of the present invention, there is provided a substrate processing apparatus which dries a substrate having a pattern forming surface formed with a pattern having concave portions, and the substrate processing apparatus includes: a sacrificial layer forming unit, Forming a sacrificial layer imitating the surface of the pattern on the pattern forming surface; filling layer forming unit, forming a filling layer filling the concave portion of the pattern on the pattern forming surface on which the sacrificial layer is formed; vaporizing unit, which Vaporizing the sacrificial layer on the substrate on which the filler layer is formed; and a peeling unit that peels the filler layer from the pattern-forming surface of the substrate on which the sacrificial layer has been vaporized.
根據該構成，藉由填充層形成單元，利用填充層填埋形成有犧牲層之圖案形成面之圖案之凹部。因此，填充層係以與圖案之表面之間介置有犧牲層之狀態形成，而非以密接於圖案之表面之狀態形成。而且，藉由利用氣化單元使形成有填充層之圖案形成面上之犧牲層氣化，犧牲層自圖案之表面與填充層之間消失。因此，與未形成犧牲層而利用填充層填埋圖案之凹部之情形相比，圖案與填充層之密接度變低。因此，可利用剝離單元容易地將填充層自犧牲層經氣化之圖案形成面剝離。其結果，可縮短基板之乾燥所需之時間。According to this configuration, the unit for forming the filling layer fills the concave portion of the pattern on the pattern forming surface on which the sacrificial layer is formed with the filling layer. Therefore, the filling layer is formed in a state where a sacrificial layer is interposed between the surface of the pattern and not in a state of being in close contact with the surface of the pattern. Furthermore, by vaporizing the sacrificial layer on the pattern forming surface on which the filling layer is formed by the vaporization unit, the sacrificial layer disappears from between the surface of the pattern and the filling layer. Therefore, the degree of adhesion between the pattern and the filling layer becomes lower than in the case where the recessed portion of the pattern is filled with the filling layer without forming the sacrificial layer. Therefore, the peeling unit can easily peel the filling layer from the vaporized pattern forming surface of the sacrificial layer. As a result, the time required for drying the substrate can be shortened.
於本發明之一實施形態中，上述氣化單元係藉由使上述犧牲層氣化，而於上述圖案之表面與上述填充層之間形成間隙。因此，藉由使犧牲層氣化，可進一步降低圖案與填充層之密接度。因此，可更容易地自圖案形成面剝離填充層。In one embodiment of the present invention, the vaporization unit vaporizes the sacrificial layer to form a gap between the surface of the pattern and the filling layer. Therefore, by vaporizing the sacrificial layer, the adhesion between the pattern and the filling layer can be further reduced. Therefore, the filling layer can be more easily peeled off from the patterned surface.
於本發明之一實施形態中，上述犧牲層形成單元具有犧牲層形成液供給單元，該犧牲層形成液供給單元對上述圖案形成面供給犧牲層形成液。因此，藉由對圖案形成面供給犧牲層形成液，可使犧牲層形成液進入至凹部之各個角落。因此，可確實地形成仿照圖案之表面之犧牲層。In one embodiment of the present invention, the sacrificial layer forming unit includes a sacrificial layer forming liquid supply unit that supplies the sacrificial layer forming liquid to the pattern forming surface. Therefore, by supplying the sacrificial layer forming liquid to the pattern forming surface, the sacrificial layer forming liquid can be allowed to enter each corner of the concave portion. Therefore, a sacrificial layer that imitates the surface of the pattern can be reliably formed.
於本發明之一實施形態中，上述基板處理裝置進而包含去除液供給單元，該去除液供給單元將用以自上述圖案形成面去除上述犧牲層形成液之去除液供給至上述圖案形成面。因此，可於形成填充層之前自圖案形成面去除無助於犧牲層之形成之犧牲層形成液。因此，可減小犧牲層形成液對填充層之形成帶來之影響。In one embodiment of the present invention, the substrate processing apparatus further includes a removal liquid supply unit that supplies the removal liquid for removing the sacrificial layer formation liquid from the pattern formation surface to the pattern formation surface. Therefore, the sacrificial layer forming liquid that does not contribute to the formation of the sacrificial layer can be removed from the pattern forming surface before the filling layer is formed. Therefore, the influence of the sacrificial layer forming liquid on the formation of the filling layer can be reduced.
於本發明之一實施形態中，上述氣化單元具有犧牲層加熱單元，該犧牲層加熱單元係介隔上述基板加熱上述犧牲層。因此，可利用將基板加熱之簡單之方法，使犧牲層氣化。In one embodiment of the present invention, the vaporization unit includes a sacrificial layer heating unit that heats the sacrificial layer via the substrate. Therefore, a simple method of heating the substrate can be used to vaporize the sacrificial layer.
於本發明之一實施形態中，上述填充層形成單元具有：填充層形成液供給單元，其對上述圖案形成面供給填充層形成液而使上述填充層形成液填充於上述凹部；及固化單元，其使上述圖案形成面上之上述填充層形成液固化。In one embodiment of the present invention, the filling layer forming unit includes a filling layer forming liquid supply unit that supplies a filling layer forming liquid to the pattern forming surface to fill the concave portion with the filling layer forming liquid; and a curing unit, This solidifies the filling layer forming liquid on the pattern forming surface.
根據該構成，藉由自填充層形成液供給單元對圖案形成面供給填充層形成液，可使填充層形成液進入至凹部之各個角落。藉此，可利用填充層形成液置換殘留於凹部之液體成分。於在該狀態下使填充層形成液固化而形成填充層之後，將填充層剝離，藉此可使基板良好地乾燥。According to this configuration, by supplying the filling layer forming liquid from the filling layer forming liquid supply unit to the pattern forming surface, the filling layer forming liquid can enter each corner of the concave portion. Thereby, the liquid component remaining in the concave portion can be replaced with the filling layer forming liquid. After the filling layer forming liquid is cured in this state to form the filling layer, the filling layer is peeled off, whereby the substrate can be dried well.
於本發明之一實施形態中，上述基板處理裝置進而包含：基板保持單元，其將上述基板保持為水平；及基板旋轉單元，其使被保持為水平之上述基板繞沿著鉛直方向之旋轉軸線旋轉。而且，上述基板旋轉單元使上述凹部填充有上述填充層形成液之上述基板旋轉，藉此一面維持上述凹部填充有上述填充層形成液之狀態，一面自上述圖案形成面排除上述填充層形成液之一部分。In one embodiment of the present invention, the substrate processing apparatus further includes: a substrate holding unit that holds the substrate horizontally; and a substrate rotation unit that rotates the substrate held horizontally around a rotation axis along the vertical direction Spin. In addition, the substrate rotating unit rotates the substrate filled with the filling layer forming liquid in the concave portion, thereby excluding the filling layer forming liquid from the pattern forming surface while maintaining the state in which the concave portion is filled with the filling layer forming liquid Part.
根據該構成，利用因基板之旋轉而產生之離心力，自圖案形成面排除填充層形成液之一部分。因此，圖案形成面上之填充層形成液之量減少。因此，可縮短填充層形成液之固化所需之時間。According to this configuration, the centrifugal force generated by the rotation of the substrate is used to exclude a part of the filling layer forming liquid from the pattern forming surface. Therefore, the amount of the filling layer forming liquid on the pattern forming surface is reduced. Therefore, the time required for curing of the filling layer forming liquid can be shortened.
於本發明之一實施形態中，上述固化單元具有填充層形成液加熱單元，該填充層形成液加熱單元係介隔上述基板加熱上述填充層形成液。因此，可利用將基板加熱之簡單之方法，使填充層形成液固化而形成填充層。In one embodiment of the present invention, the curing unit includes a filling layer forming liquid heating unit that heats the filling layer forming liquid via the substrate. Therefore, a simple method of heating the substrate can be used to solidify the filling layer forming liquid to form the filling layer.
於本發明之一實施形態中，上述氣化單元具有犧牲層加熱單元，該犧牲層加熱單元係介隔上述基板加熱上述犧牲層。而且，上述填充層形成單元具有：填充層形成液供給單元，其將固化溫度較上述犧牲層之氣化溫度低之填充層形成液供給至上述圖案形成面；及填充層形成液加熱單元，其介隔上述基板加熱上述填充層形成液。In one embodiment of the present invention, the vaporization unit includes a sacrificial layer heating unit that heats the sacrificial layer via the substrate. Furthermore, the filling layer forming unit includes: a filling layer forming liquid supply unit that supplies a filling layer forming liquid whose curing temperature is lower than the vaporization temperature of the sacrificial layer to the pattern forming surface; and a filling layer forming liquid heating unit, which The filling layer forming liquid is heated across the substrate.
根據該構成，可藉由利用填充層形成液加熱單元將基板加熱之簡單之方法，使填充層形成液固化而形成填充層。進而，亦可藉由利用犧牲層加熱單元將基板加熱之簡單之方法，使形成有填充層之圖案形成面上之犧牲層氣化。又，因填充層形成液之固化溫度較犧牲層之氣化溫度低，故而可防止於利用犧牲層加熱單元將基板加熱時，在填充層形成液固化之前使犧牲層氣化。又，於犧牲層之加熱開始時，已藉由為了形成填充層形成液而進行之加熱將犧牲層加熱。因此，可縮短用於犧牲層之氣化之加熱所需之時間。According to this structure, the filling layer can be formed by curing the filling layer forming liquid by a simple method of heating the substrate by the filling layer forming liquid heating unit. Furthermore, the sacrificial layer on the patterned surface on which the filling layer is formed can be vaporized by a simple method of heating the substrate using the sacrificial layer heating unit. In addition, since the curing temperature of the filling layer forming liquid is lower than the vaporization temperature of the sacrificial layer, it is possible to prevent the sacrificial layer from being vaporized before the filling layer forming liquid is cured when the substrate is heated by the sacrificial layer heating unit. In addition, when the heating of the sacrificial layer is started, the sacrificial layer has been heated by the heating performed to form the filling layer forming liquid. Therefore, the time required for the heating of the gasification of the sacrificial layer can be shortened.
又，藉由自填充層形成液供給單元對圖案形成面供給填充層形成液，可使填充層形成液進入至凹部之各個角落。藉此，可利用填充層形成液置換殘留於凹部之液體成分。於在該狀態下使填充層形成液固化而形成填充層之後，將填充層剝離，藉此可使基板良好地乾燥。In addition, by supplying the filling layer forming liquid to the pattern forming surface from the filling layer forming liquid supply unit, the filling layer forming liquid can be allowed to enter each corner of the concave portion. Thereby, the liquid component remaining in the concave portion can be replaced with the filling layer forming liquid. After the filling layer forming liquid is cured in this state to form the filling layer, the filling layer is peeled off, whereby the substrate can be dried well.
本發明之上述或進而其他目的、特徵及效果係藉由以下參照隨附圖式敍述之實施形態之說明而明確。The above or further other objects, features, and effects of the present invention will be made clear by the following description with reference to the embodiments described in the accompanying drawings.
圖1A係用以說明本發明之第1實施形態之基板處理裝置1之構成的模式性俯視圖。圖1B係用以說明基板處理裝置1之構成之模式性立面圖。FIG. 1A is a schematic plan view for explaining the structure of the
參照圖1A，基板處理裝置1係對半導體晶圓等基板W逐片實施清洗處理或蝕刻處理等各種處理之單片式之裝置。由基板處理裝置1進行處理之基板W具有第1主面W1、及第1主面W1之相反側之主面即第2主面W2(參照圖1B)。第1主面W1係形成有圖案之圖案形成面。於第2主面W2，未形成有圖案。Referring to FIG. 1A, a
如圖2所示，於基板W之第1主面W1，形成有微細之圖案161。圖案161包含形成於基板W之表面之微細之凸狀之構造體162。構造體162可包含絕緣體膜，亦可包含導體膜。又，構造體162亦可為積層複數層膜所得之積層膜。於線狀之構造體162相鄰之情形時，於其等之間形成有凹部(槽)163。於此情形時，構造體162之寬度L1亦可為10 nm~45 nm左右，構造體162彼此之間隔L2亦可為10 nm~數μm左右。構造體162之高度T亦可為例如50 nm~5 μm左右。圖案161之表面包含構造體162之表面及凹部163之底面。於構造體162為筒狀之情形時，在其內側形成有凹部。As shown in FIG. 2, a
再次參照圖1A，基板處理裝置1包含利用處理液對基板W進行處理之複數個(本實施形態中為4個)處理塔2。處理液包含下述藥液、沖洗液、兩親媒性之有機溶劑、犧牲層形成液、填充層形成液及清洗液等。複數個處理塔2例如具有相同之構成。Referring again to FIG. 1A, the
基板處理裝置1進而包含：裝載埠口LP，其供載置載具C，該載具C收容由處理塔2進行處理之複數片基板W；搬送機械手IR及CR，其等於裝載埠口LP與處理塔2之間搬送基板W；控制器3，其控制基板處理裝置1；搬送路徑5，其於水平方向上延伸；及翻轉單元6，其使基板W之正背翻轉。The
搬送路徑5自搬送機械手IR朝向搬送機械手CR呈直線狀延伸。搬送機械手IR於載具C與搬送機械手CR之間搬送基板W。搬送機械手CR於搬送機械手IR與處理塔2之間搬送基板W。The
複數個處理塔2隔著搬送路徑5對稱地配置。複數個處理塔2於搬送路徑5之兩側之各側，沿著搬送路徑5延伸之方向(延長方向X)排列。於本實施形態中，處理塔2於搬送路徑5之兩側各配置有2個。翻轉單元6配置於搬送路徑5中距離搬送機械手IR最遠之位置。The plurality of
處理塔2包含液體處理單元M、第1加熱單元D1及第2加熱單元D2。於本實施形態中，液體處理單元M於各處理塔2分別設置有2個。The
參照圖1B，於處理塔2中，上下積層有2個液體處理單元M、第1加熱單元D1及第2加熱單元D2。於處理塔2中，自下側起依序配置有液體處理單元M、液體處理單元M、第1加熱單元D1及第2加熱單元D2。1B, in the
圖3係用以說明液體處理單元M之構成例之模式性剖視圖。液體處理單元M包含腔室R1、旋轉夾盤10、處理承杯11、第1移動噴嘴12、第2移動噴嘴13、第1固定噴嘴14及複數個第2固定噴嘴15。旋轉夾盤10、處理承杯11、第1移動噴嘴12、第2移動噴嘴13、第1固定噴嘴14及複數個第2固定噴嘴15配置於腔室R1內。FIG. 3 is a schematic cross-sectional view for explaining a configuration example of the liquid processing unit M. FIG. The liquid processing unit M includes a chamber R1, a
旋轉夾盤10包含旋轉基座21、旋轉軸22、及對旋轉軸22賦予旋轉力之旋轉馬達23。旋轉軸22係中空軸。旋轉軸22沿著旋轉軸線A1在鉛直方向上延伸。於旋轉軸22之上端，結合有旋轉基座21。旋轉基座21具有沿著水平方向之圓盤狀之圓板部21A、及外嵌於旋轉軸22之上端之筒狀部21B。圓板部21A之上表面之直徑較基板W之直徑小。The
旋轉夾盤10進而包含吸引單元27，該吸引單元27吸引配置於旋轉基座21之上表面之基板W，以使基板W保持於旋轉基座21。於旋轉基座21及旋轉軸22，插通有吸引路徑25。吸引路徑25具有自旋轉基座21之上表面之中心露出之吸引口24。吸引路徑25連結於吸引管26。吸引管26連結於真空泵等吸引單元27。於吸引管26，介裝有用以使該路徑開閉之吸引閥28。旋轉夾盤10係用以將基板W保持為水平之基板保持單元之一例。The
藉由利用旋轉馬達23使旋轉軸22旋轉，而使旋轉基座21旋轉。藉此，基板W繞旋轉軸線A1旋轉。旋轉馬達23係使基板W繞旋轉軸線A1旋轉之基板旋轉單元之一例。By rotating the
於腔室R1之側壁30，形成有供利用搬送機械手CR將基板W搬入搬出之出入口31。於腔室R1，設置有使出入口31開閉之擋閘32。擋閘32係藉由擋閘開閉單元33而開閉驅動。On the
處理承杯11包含：複數個護罩16，其等承接自保持於旋轉夾盤10之基板W朝外側飛散之液體；及複數個承杯17，其等承接由複數個護罩16引導至下方之液體。於本實施形態中，示出設置有2個護罩16(第1護罩16A及第2護罩16B)、及2個承杯17(第1承杯17A及第2承杯17B)之例。The
第1承杯17A及第2承杯17B之各者具有朝上敞開之槽狀之形態。第1護罩16A包圍旋轉基座21。第2護罩16B於較第1護罩16A更靠外側包圍旋轉基座21。第1承杯17A承接由第1護罩16A引導至下方之液體。第2承杯17B承接由第2護罩16B引導至下方之液體。於各承杯17之槽，連接有回收配管(未圖示)或排出配管(未圖示)。第1護罩16A與第2護罩16B可藉由護罩升降單元36而個別地升降。護罩升降單元36例如包含滾珠螺桿、及對該滾珠螺桿賦予驅動力之馬達。護罩升降單元36亦稱為護罩升降器。Each of the
第1移動噴嘴12係朝向被保持於旋轉夾盤10之基板W之上表面供給(噴出)藥液的藥液供給單元之一例。自第1移動噴嘴12噴出之藥液例如為氫氟酸。The first moving
自第1移動噴嘴12噴出之藥液並不限於氫氟酸。即，自第1移動噴嘴12噴出之藥液亦可為包含硫酸、乙酸、硝酸、鹽酸、氫氟酸、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如TMAH：氫氧化四甲基銨等)、界面活性劑、防腐蝕劑中之至少一者之液體。作為將該等混合所得之藥液之例，可列舉SPM(sulfuric acid/hydrogen peroxide mixture：硫酸過氧化氫水混合液)及SC1(ammonia-hydrogen peroxide mixture：氨過氧化氫水混合液)等。The chemical solution discharged from the first moving
第1移動噴嘴12連接於引導藥液之藥液配管40。當將介裝於藥液配管40之藥液閥50打開時，藥液自第1移動噴嘴12朝下方連續地噴出。The first moving
第1移動噴嘴12係藉由第1噴嘴移動單元37而於水平方向及鉛直方向上移動。第1移動噴嘴12可於中心位置與靜止位置(退避位置)之間移動。第1移動噴嘴12於位於中心位置時，與基板W之上表面之旋轉中心對向。所謂基板W之上表面之旋轉中心係指基板W之上表面之與旋轉軸線A1之交叉位置。第1移動噴嘴12於位於靜止位置時，不與基板W之上表面對向，而於俯視下位於處理承杯11之外側。第1移動噴嘴12可藉由朝鉛直方向之移動而與基板W之上表面接近或自基板W之上表面朝上方退避。The first moving
第1噴嘴移動單元37例如包含沿著鉛直方向之旋動軸、與旋動軸結合並水平地延伸之臂部、及使旋動軸升降或旋動之旋動軸驅動單元。旋動軸驅動單元係藉由使旋動軸繞鉛直之旋動軸線旋動而使臂部擺動。進而，旋動軸驅動單元係藉由使旋動軸沿著鉛直方向升降，而使臂部上下移動。第1移動噴嘴12固定於臂部。相應於臂部之擺動及升降，第1移動噴嘴12於水平方向及鉛直方向上移動。The first
第2移動噴嘴13具有作為犧牲層形成液供給單元之功能，該犧牲層形成液供給單元係朝向被保持於旋轉夾盤10之基板W之上表面(第1主面W1)供給(噴出)犧牲層形成液。第2移動噴嘴13進而具有作為有機溶劑供給單元之功能，該有機溶劑供給單元係朝向被保持於旋轉夾盤10之基板W之上表面(第1主面W1)供給(噴出)IPA(異丙醇)等兩親媒性之有機溶劑。第2移動噴嘴13進而具有作為填充層形成液供給單元之功能，該填充層形成液供給單元係朝向被保持於旋轉夾盤10之基板W之上表面(第1主面W1)供給(噴出)填充層形成液。The second moving
犧牲層形成液係與形成於基板W之第1主面W1之圖案161(參照圖2)之表面的SiO2 膜發生反應而形成犧牲層之液體。作為犧牲層形成液，使用犧牲層之熱分解溫度(氣化溫度)為例如500℃左右者。犧牲層當達到熱分解溫度時便分解並氣化。犧牲層亦可藉由昇華而氣化。作為犧牲層形成液，例如可列舉使基板W之表面疏水化之疏水化劑。The sacrificial layer forming liquid reacts with the SiO 2 film formed on the surface of the pattern 161 (refer to FIG. 2) on the first main surface W1 of the substrate W to form a sacrificial layer. As the sacrificial layer forming liquid, the thermal decomposition temperature (gasification temperature) of the sacrificial layer is, for example, about 500°C. The sacrificial layer decomposes and vaporizes when it reaches the thermal decomposition temperature. The sacrificial layer can also be vaporized by sublimation. Examples of the sacrificial layer forming liquid include a hydrophobizing agent that hydrophobizes the surface of the substrate W.
作為疏水化劑，例如可使用使矽本身及含矽之化合物疏水化之矽系疏水化劑、或使金屬本身及含金屬之化合物疏水化之金屬系疏水化劑。金屬系疏水化劑例如包含具有疏水基之胺、及有機矽化合物之至少一者。矽系疏水化劑例如為矽烷偶合劑。矽烷偶合劑例如包含HMDS(六甲基二矽氮烷)、TMS(四甲基矽烷)、氟化烷氯矽烷、烷基二矽氮烷、及非氯系疏水化劑之至少一者。非氯系之疏水化劑例如包含二甲基矽烷基二甲基胺、二甲基矽烷基二乙基胺、六甲基二矽氮烷、四甲基二矽氮烷、雙(二甲胺基)二甲基矽烷、N,N-二甲胺基三甲基矽烷、N-(三甲基矽烷基)二甲基胺及有機矽烷化合物之至少一者。As the hydrophobizing agent, for example, a silicon-based hydrophobizing agent that hydrophobizes silicon itself and the silicon-containing compound, or a metal-based hydrophobizing agent that hydrophobizes the metal itself and the metal-containing compound can be used. The metal-based hydrophobizing agent includes, for example, at least one of an amine having a hydrophobic group and an organic silicon compound. The silicon-based hydrophobizing agent is, for example, a silane coupling agent. The silane coupling agent includes, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and a non-chlorine-based hydrophobizing agent. Non-chlorine-based hydrophobizing agents include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamine At least one of dimethyl silane, N,N-dimethylaminotrimethyl silane, N-(trimethyl silane) dimethyl amine and organic silane compound.
犧牲層形成液亦可包含作為溶質之疏水化劑、及將疏水化劑溶解之溶劑。作為溶劑，可列舉PGMEA(丙二醇單甲醚乙酸酯)等有機溶劑。The sacrificial layer forming liquid may contain a hydrophobizing agent as a solute and a solvent to dissolve the hydrophobizing agent. Examples of the solvent include organic solvents such as PGMEA (propylene glycol monomethyl ether acetate).
填充層形成液係藉由固化而形成填充層之液體。「固化」例如包含：藉由伴隨溶劑之蒸發而作用於分子間之力等使溶質凝固；及藉由聚合或交聯等化學性變化使物質凝固(硬化)。The filling layer forming liquid is a liquid that forms a filling layer by solidification. "Curing" includes, for example, solidification of solutes by forces acting between molecules accompanying evaporation of solvents; and solidification (hardening) of substances by chemical changes such as polymerization or crosslinking.
藉由聚合或交聯等化學性變化而硬化之填充層形成液包含藉由加熱而硬化之熱硬化性物質、或藉由光之照射而硬化之光硬化性物質。以下，有時將熱硬化性物質及光硬化性物質統稱為硬化性物質。作為包含硬化性物質之液體，例如可使用硬化性物質之熔融液等以熔解狀態包含硬化性物質者、或者使作為溶質之硬化性物質溶解於溶劑而得之溶液等。此處，所謂「熔解狀態」係指藉由硬化性物質完全或一部分溶解而具有流動性之狀態。作為熔解狀態之硬化性物質，可列舉流動性之有機聚合物等。The filling layer forming liquid hardened by chemical changes such as polymerization or cross-linking contains a thermosetting substance hardened by heating or a photohardening substance hardened by irradiation of light. Hereinafter, the thermosetting substance and the photocuring substance may be collectively referred to as a curable substance. As the liquid containing the hardening substance, for example, a melt of the hardening substance or the like which contains the hardening substance in a molten state or a solution obtained by dissolving the hardening substance as a solute in a solvent can be used. Here, the "melted state" refers to a state in which the hardenable substance is completely or partially dissolved and has fluidity. Examples of the curable substance in the melted state include fluid organic polymers.
作為被用作填充層形成液溶劑之液體，可列舉PGMEA等。於本實施形態中，對填充層形成液包含熱硬化性物質之例進行說明。作為熱硬化性物質，使用熱硬化溫度(固化溫度)為較犧牲層之熱分解溫度低之溫度(例如200℃左右)者。Examples of the liquid used as the solvent for the filling layer forming liquid include PGMEA and the like. In this embodiment, an example in which the filling layer forming liquid contains a thermosetting substance will be described. As the thermosetting substance, a thermosetting temperature (curing temperature) that is lower than the thermal decomposition temperature of the sacrificial layer (for example, about 200°C) is used.
作為兩親媒性之有機溶劑，可使用不與基板W之上表面及形成於基板W之圖案161發生化學反應之(反應性缺乏之)液體。兩親媒性之有機溶劑較佳為與犧牲層形成液及填充層形成液之各者具有相容性。As the amphiphilic organic solvent, a liquid (which lacks reactivity) that does not chemically react with the upper surface of the substrate W and the
第2移動噴嘴13連接於如下構件：犧牲層形成液配管41，其引導犧牲層形成液；填充層形成液配管42，其引導填充層形成液；及有機溶劑配管43，其引導有機溶劑。當將介裝於犧牲層形成液配管41之犧牲層形成液閥51打開時，犧牲層形成液自第2移動噴嘴13朝下方連續地噴出。當將介裝於填充層形成液配管42之填充層形成液閥52打開時，填充層形成液自第2移動噴嘴13朝下方連續地噴出。當將介裝於有機溶劑配管43之有機溶劑閥53打開時，有機溶劑自第2移動噴嘴13朝下方連續地噴出。The second moving
第2移動噴嘴13係藉由第2噴嘴移動單元38而於水平方向及鉛直方向上移動。第2移動噴嘴13可於中心位置與靜止位置(退避位置)之間移動。第2移動噴嘴13於位於中心位置時，與基板W之上表面之旋轉中心對向。第2移動噴嘴13於位於靜止位置時，不與基板W之上表面對向，而於俯視下位於處理承杯11之外側。第2移動噴嘴13可藉由朝鉛直方向之移動而與基板W之上表面接近或自基板W之上表面朝上方退避。The second moving
第2噴嘴移動單元38具有與第1噴嘴移動單元37相同之構成。即，第2噴嘴移動單元38例如包含沿著鉛直方向之旋動軸、與旋動軸及第2移動噴嘴13結合並水平地延伸之臂部、及使旋動軸升降或旋動之旋動軸驅動單元。The second
第1固定噴嘴14包含於沖洗液供給單元，該沖洗液供給單元係朝向被保持於旋轉夾盤10之基板W之上表面(第1主面W1)供給(噴出)沖洗液。沖洗液例如為DIW(純水)。作為沖洗液，除DIW以外，亦可列舉碳酸水、電解離子水、氫水、臭氧水、氨水及稀釋濃度(例如10 ppm~100 ppm左右)之鹽酸水等。The first fixed
第1固定噴嘴14連接於引導沖洗液之沖洗液配管44。當將介裝於沖洗液配管44之沖洗液閥54打開時，沖洗液自第1固定噴嘴14之噴出口朝下方連續地噴出。The first fixed
複數個第2固定噴嘴15於繞旋轉軸線A1之旋轉方向上隔開間隔而配置。第2固定噴嘴15包含於清洗液供給單元，該清洗液供給單元係朝向基板W之下表面(第2主面W2)之周緣部供給(噴出)IPA等清洗液。清洗液係用以於基板W之下表面對周緣部進行清洗之液體。可利用清洗液去除附著於基板W之下表面之周緣部之犧牲層形成液或填充層形成液。The plurality of second fixed
第2固定噴嘴15逐一連接於引導清洗液之複數個清洗液配管45之各者。當將介裝於清洗液配管45之清洗液閥55打開時，清洗液自第2固定噴嘴15之噴出口朝上方連續地噴出。The second
圖4係用以說明第1加熱單元D1之構成例之模式性剖視圖。第1加熱單元D1包含：腔室R2；第1基板保持器60，其保持基板W；第1加熱器61，其將基板W加熱；及複數個第1頂起銷62，其等使基板W上下移動。4 is a schematic cross-sectional view for explaining a configuration example of the first heating unit D1. The first heating unit D1 includes: a chamber R2; a
第1基板保持器60係以基板W成為水平之姿勢之方式自下方支持基板W的板狀之構件。第1基板保持器60收容於腔室R2內。The
第1加熱器61內置於第1基板保持器60。第1加熱器61係藉由傳熱或熱輻射而加熱基板W。於第1加熱器61，連接有對第1加熱器61供給電力之第1加熱器通電單元63。第1加熱器通電單元63包含電源、及連接電源與第1加熱器61之電線。第1加熱器61只要可將基板W加熱至填充層形成液之熱硬化溫度為止便可。亦可代替第1加熱器61，使用照射電磁波(紫外線、紅外線、微波、X射線及雷射光等)而將基板W加熱之電磁波照射單元。The
複數個第1頂起銷62分別***至貫通第1基板保持器60之複數個貫通孔。複數個第1頂起銷62係藉由第1頂起銷升降單元68而於上位置與下位置之間升降。第1頂起銷升降單元68例如包含滾珠螺桿、及對該滾珠螺桿賦予驅動力之馬達。第1頂起銷升降單元68亦可稱為第1頂起銷升降器。The plurality of first jacking
於複數個第1頂起銷62位於上位置時，基板W自第1基板保持器60朝上方離開。於複數個第1頂起銷62位於下位置時，複數個第1頂起銷62之上端部退避至第1基板保持器60之內部。因此，基板W由第1基板保持器60自下方支持。When the plurality of first jacking
腔室R2具有第1基座部64、及相對於第1基座部64上下移動之第1可動蓋部65。由第1基座部64及第1可動蓋部65將腔室R2之內部空間66劃分。第1可動蓋部65係藉由第1蓋部驅動單元67而於上位置與下位置之間升降。第1蓋部驅動單元67例如包含滾珠螺桿、及對該滾珠螺桿賦予驅動力之馬達。The chamber R2 has a
於第1可動蓋部65位於下位置時，第1基座部64與第1可動蓋部65接觸，腔室R2關閉。於第1可動蓋部65位於上位置時，腔室R2打開。當使腔室R2打開時，搬送機械手CR可接近腔室R2之內部空間66。於該狀態下，使複數個第1頂起銷62位於上位置而使基板W自第1基板保持器60離開，藉此，搬送機械手CR可自第1頂起銷62接收基板W，或將基板W交接至第1頂起銷62。When the first
圖5係用以說明第2加熱單元D2之構成例之模式性剖視圖。FIG. 5 is a schematic cross-sectional view for explaining a configuration example of the second heating unit D2.
第2加熱單元D2包含：腔室R3；第2基板保持器70，其保持基板W；第2加熱器71，其將基板W加熱；及複數個第2頂起銷72，其等使基板W上下移動。The second heating unit D2 includes: a chamber R3; a
第2基板保持器70係以基板W成為水平之姿勢之方式自下方支持基板W的板狀之構件。第2基板保持器70收容於腔室R3內。The
第2加熱器71內置於第2基板保持器70。第2加熱器71係藉由傳熱或熱輻射而加熱基板W。於第2加熱器71，連接有對第2加熱器71供給電力之第2加熱器通電單元73。第2加熱器通電單元73包含電源、及連接電源與第2加熱器71之電線。第2加熱器71只要可將基板W加熱至犧牲層之熱分解溫度為止便可。The
亦可代替第2加熱器71，使用照射電磁波(紫外線、紅外線、微波、X射線及雷射光等)而將基板W加熱之電磁波照射單元。Instead of the
複數個第2頂起銷72分別***至貫通第2基板保持器70之複數個貫通孔。複數個第2頂起銷72係藉由第2頂起銷升降單元78而於上位置與下位置之間升降。第2頂起銷升降單元78例如包含滾珠螺桿、及對該滾珠螺桿賦予驅動力之馬達。第2頂起銷升降單元78亦可稱為第2頂起銷升降器。The plurality of second jacking
於複數個第2頂起銷72位於上位置時，基板W自第2基板保持器70朝上方離開。於複數個第2頂起銷72位於下位置時，複數個第2頂起銷72之上端部退避至第2基板保持器70之內部。因此，基板W由第2基板保持器70自下方支持。When the plurality of second lift pins 72 are in the upper position, the substrate W is separated upward from the
腔室R3具有第2基座部74、及相對於第2基座部74上下移動之第2可動蓋部75。由第2基座部74及第2可動蓋部75將腔室R3之內部空間76劃分。第2可動蓋部75係藉由第2蓋部驅動單元77而於上位置與下位置之間升降。第2蓋部驅動單元77例如包含滾珠螺桿、及對該滾珠螺桿賦予驅動力之馬達。The chamber R3 has a
於第2可動蓋部75位於下位置時，第2基座部74與第2可動蓋部75接觸，腔室R3關閉。於第2可動蓋部75位於上位置時，腔室R3打開。當使腔室R3打開時，搬送機械手CR可接近腔室R3之內部空間76。於該狀態下，使複數個第2頂起銷72位於上位置而使基板W自第2基板保持器70離開，藉此，搬送機械手CR可自第2頂起銷72接收基板W，或將基板W交接至第2頂起銷72。When the second
圖6係用以說明翻轉單元6之構成例之模式性俯視圖。翻轉單元6包含：一對夾持構件80，其等夾持基板W；夾持構件旋轉單元81，其使一對夾持構件80旋轉；及夾持構件移動單元82，其使一對夾持構件80之一者相對於基板W相接/分離(移動)。FIG. 6 is a schematic plan view for explaining a configuration example of the
夾持構件80包含抵接於基板W之周緣之抵接部80a、及連結於抵接部80a之軸部80b。一對夾持構件80之抵接部80a隔著基板W之第1主面W1之中心而相互對向。夾持構件80之軸部80b經由軸承83可旋轉地支持於支持構件84。一對夾持構件80之軸部80b之旋轉中心軸A2共通，且通過基板W之中心。夾持構件旋轉單元81包含對一夾持構件80之軸部80b賦予旋轉力之馬達。夾持構件移動單元82包含氣缸，該氣缸使一夾持構件80之抵接部80a相對於一夾持構件80之軸部80b朝另一夾持構件80側移動。The clamping
夾持構件移動單元82使一夾持構件80之抵接部80a相對於一夾持構件80之軸部80b移動，使一夾持構件80之抵接部80a抵接於基板W之周緣。藉此，利用一對夾持構件80夾持基板W。於該狀態下，夾持構件旋轉單元81對一夾持構件80之軸部80b賦予旋轉力，藉此，基板W繞旋轉中心軸A2旋轉。藉此，可使基板W翻轉。The clamping
圖7係用以說明基板處理裝置1之主要部分之電性構成之區塊圖。控制器3具備微電腦，且按照特定之程式控制基板處理裝置1所具備之控制對象。更具體而言，控制器3構成為包含處理器(CPU)3A、及儲存有程式之記憶體3B，且藉由處理器3A執行程式而執行用於基板處理之多種控制。7 is a block diagram for explaining the electrical structure of the main part of the
尤其是，控制器3控制搬送機械手IR、CR、吸引單元27、旋轉馬達23、擋閘開閉單元33、護罩升降單元36、第1噴嘴移動單元37、第2噴嘴移動單元38、第1蓋部驅動單元67、第2蓋部驅動單元77、第1頂起銷升降單元68、第2頂起銷升降單元78、第1加熱器通電單元63、第2加熱器通電單元73、夾持構件旋轉單元81、夾持構件移動單元82及吸引閥28、藥液閥50、犧牲層形成液閥51、填充層形成液閥52、有機溶劑閥53、沖洗液閥54、清洗液閥55等之動作。藉由控制藥液閥50、犧牲層形成液閥51、填充層形成液閥52、有機溶劑閥53、沖洗液閥54及清洗液閥55，而控制來自對應之噴嘴之流體之噴出。In particular, the
圖8係用以說明利用基板處理裝置1進行之基板處理之一例之流程圖，主要表示藉由控制器3執行程式而實現之處理。FIG. 8 is a flowchart for explaining an example of substrate processing performed by the
於利用基板處理裝置1進行之基板處理中，例如如圖8所示，依序執行藥液處理(步驟S1)、沖洗處理(步驟S2)及乾燥處理(步驟S3)。In the substrate processing performed by the
首先，於利用基板處理裝置1進行之基板處理中，基板W由搬送機械手IR、CR(參照圖1)自載具C搬入至處理塔2之液體處理單元M。繼而，開始利用吸引單元27之吸引，且於將吸引閥28打開之狀態下，基板W被移交至旋轉夾盤10。First, in the substrate processing performed by the
基板W於由搬送機械手CR搬出為止之期間，由旋轉夾盤10保持為水平(基板保持製程)。基板W係於使第1主面W1朝向上方之狀態下，保持於旋轉夾盤10。繼而，旋轉馬達23使旋轉基座21之旋轉開始。藉此，基板W之旋轉開始(基板旋轉製程)。基板W之旋轉速度例如為300 rpm~500 rpm。基板W之旋轉係於由搬送機械手CR搬出為止之期間繼續。The substrate W is held horizontally by the
繼而，開始藥液處理(步驟S1)。具體而言，第1噴嘴移動單元37使第1移動噴嘴12移動至中心位置。繼而，將藥液閥50打開。藉此，自第1移動噴嘴12對旋轉狀態之基板W之第1主面W1(上表面)之中央區域供給藥液(藥液供給製程)。藥液係藉由離心力而遍及基板W之第1主面W1之整體。Then, the chemical solution processing is started (step S1). Specifically, the first
其次，執行沖洗處理(步驟S2)。於沖洗處理中，基板W上之藥液被DIW等沖洗液沖洗。Next, the flushing process is executed (step S2). In the rinsing process, the chemical solution on the substrate W is rinsed with a rinse solution such as DIW.
具體而言，將藥液閥50關閉。藉此，停止來自第1移動噴嘴12之藥液之噴出。繼而，將沖洗液閥54打開。藉此，自第1固定噴嘴14朝向旋轉狀態之基板W之上表面之中央區域供給沖洗液(沖洗液供給製程)。沖洗液係藉由離心力而遍及基板W之上表面之整體。藉此，基板W上之藥液由沖洗液置換。Specifically, the chemical
其次，執行使基板W乾燥之乾燥處理(步驟S3)。以下，對乾燥處理進行具體說明。圖9係用以說明乾燥處理(步驟S3)之一例之流程圖。於利用基板處理裝置1進行之乾燥處理(步驟S3)中，例如，如圖9所示，依序執行有機溶劑置換製程(步驟S31)、犧牲層形成液供給製程(步驟S32)、去除液供給製程(步驟S33)、填充製程(步驟S34)、旋轉排除製程(步驟S35)、加熱固化製程(步驟S36)、加熱氣化製程(步驟S37)及剝離製程(步驟S38)。Next, a drying process to dry the substrate W is performed (step S3). Hereinafter, the drying treatment will be specifically described. 9 is a flowchart for explaining an example of the drying process (step S3). In the drying process (step S3) performed by the
圖10A~圖10H係用以說明乾燥處理(步驟S3)之一例之模式性剖視圖。圖11A~圖11G係用以說明乾燥處理(步驟S3)之一例中之基板W的第1主面W1之構造之變化之模式性剖視圖。10A to 10H are schematic cross-sectional views for explaining an example of the drying process (step S3). 11A to 11G are schematic cross-sectional views for explaining the change in the structure of the first main surface W1 of the substrate W in an example of the drying process (step S3).
於乾燥處理(步驟S3)中，首先，參照圖10A，第2噴嘴移動單元38使第2移動噴嘴13移動至中心位置。繼而，將沖洗液閥54(參照圖3)關閉。藉此，停止來自第1固定噴嘴14(參照圖3)之沖洗液之噴出。繼而，將有機溶劑閥53打開。藉此，自第2移動噴嘴13朝向旋轉狀態之基板W之第1主面W1之中央區域噴出(供給)有機溶劑180。有機溶劑180係藉由離心力而遍及基板W之上表面之整體。藉此，基板W上之沖洗液由有機溶劑180置換(圖9之有機溶劑置換製程(步驟S31))。進入至圖案161之複數個凹部163之沖洗液亦由有機溶劑180置換(參照圖11A)。In the drying process (step S3), first, referring to FIG. 10A, the second
繼而，將有機溶劑閥53關閉。藉此，停止來自第2移動噴嘴13之有機溶劑之噴出(供給)。取而代之，如圖10B所示，將犧牲層形成液閥51打開。藉此，自第2移動噴嘴13朝向旋轉狀態之基板W之第1主面W1之中央區域噴出(供給)犧牲層形成液181(犧牲層形成液供給製程(步驟S32))。犧牲層形成液181係藉由離心力而遍及基板W之上表面(第1主面W1)之整體。藉此，基板W上之有機溶劑180由犧牲層形成液181置換。Then, the organic
如圖11B所示，進入至圖案161內之複數個凹部163之有機溶劑180亦由犧牲層形成液181置換。繼而，藉由基板W上之圖案161與犧牲層形成液181發生反應，而於第1主面W1形成仿照圖案161之表面之犧牲層170(犧牲層形成製程)。犧牲層170為固體。犧牲層170亦可為具有相當於疏水化劑之1分子之大小之厚度的單分子層。如此，第2移動噴嘴13作為於基板W之第1主面W1形成犧牲層170之犧牲層形成單元發揮功能。As shown in FIG. 11B, the organic solvent 180 entering the plurality of
繼而，將犧牲層形成液閥51關閉。藉此，停止來自第2移動噴嘴13之犧牲層形成液181之噴出(供給)。取而代之，如圖10C所示，將有機溶劑閥53再次打開。藉此，自第2移動噴嘴13朝向旋轉狀態之基板W之第1主面W1之中央區域噴出(供給)有機溶劑180。有機溶劑180係藉由離心力而遍及基板W之上表面之整體。藉此，基板W上之犧牲層形成液181由有機溶劑180置換。如此，作為自第1主面W1去除犧牲層形成液181發揮功能。又，第2移動噴嘴13作為去除液供給單元功能，藉由自第2移動噴嘴13朝向旋轉狀態之基板W之第1主面W1之中央區域供給去除液而執行去除液供給製程(步驟S33)。Then, the sacrificial layer formation
如圖11C所示，進入至圖案161之複數個凹部163之犧牲層形成液181亦由有機溶劑180置換。As shown in FIG. 11C, the sacrificial
繼而，將有機溶劑閥53關閉。藉此，停止來自第2移動噴嘴13之有機溶劑180之噴出(供給)。取而代之，如圖10D所示，將填充層形成液閥52打開。藉此，自第2移動噴嘴13朝向旋轉狀態之基板W之第1主面W1之中央區域噴出(供給)填充層形成液182(填充層形成液供給製程(步驟S34))。填充層形成液182係藉由離心力而遍及基板W之上表面之整體。藉此，基板W上之有機溶劑180由填充層形成液182置換，於基板W上形成填充層形成液182之液膜171。Then, the organic
如圖11D所示，進入至圖案161之複數個凹部163之有機溶劑亦由填充層形成液182置換，藉此，將填充層形成液182填充於圖案161之複數個凹部163(填充製程)。於將填充層形成液182填充在圖案161之凹部163之後，亦維持於第1主面W1形成有犧牲層170之狀態。As shown in FIG. 11D, the organic solvent entering the plurality of
繼而，將填充層形成液閥52關閉。藉此，如圖10E所示，停止來自第2移動噴嘴13之填充層形成液182之噴出(供給)。繼而，旋轉馬達23使基板W之旋轉加速，使基板W高速旋轉。藉此，將基板W上之填充層形成液182之一部分排除而使液膜171薄膜化(旋轉排除製程(步驟S35))。Then, the filling layer forming
參照圖11E，於使液膜171薄膜化之後，亦維持填充層形成液182填充於凹部163之狀態。較佳為以液膜171之表面位於較圖案161之上端(構造體162之前端)更靠上方之方式，排除填充層形成製程。再者，旋轉排除製程(步驟S35)係於填充製程執行後且於下述固化製程執行前進行。Referring to FIG. 11E, after the
亦可於停止對第1主面W1之填充層形成液182之供給之後，將複數個清洗液閥55打開。藉此，自第2固定噴嘴15朝向基板W之第2主面W2之周緣部噴出(供給)清洗液，清洗第2主面W2之周緣部(周緣部清洗製程)。詳細而言，自第1主面W1之周緣部流回至第2主面W2之周緣部之犧牲層形成液181或填充層形成液182被置換為清洗液。After the supply of the filling
於一定時間之周緣部清洗製程之後，將複數個清洗液閥55關閉，停止自第2固定噴嘴15向基板W之第2主面W2之周緣部噴出清洗液。繼而，旋轉馬達23使基板W之旋轉停止。繼而，將吸引閥28關閉。繼而，搬送機械手CR自旋轉夾盤10接收基板W，將基板W自液體處理單元M搬出。After the peripheral portion cleaning process for a certain period of time, the plurality of cleaning
搬送機械手CR將自液體處理單元M搬出之基板W搬入至第1加熱單元D1。於第1加熱單元D1中，如圖10F所示，利用內置於第1基板保持器60之第1加熱器61加熱基板W。利用第1加熱器61，介隔基板W加熱填充層形成液182至填充層形成液182之熱硬化溫度(固化溫度)為止。藉此，基板W之第1主面W1之填充層形成液182固化，形成填埋凹部163之填充層172(加熱固化製程(步驟S36)、固化製程)。如此，可利用將基板W加熱之簡單之方法，使填充層形成液182固化而形成填充層172。於本實施形態中，第1加熱器61具有作為介隔基板W將填充層形成液182加熱之填充層形成液加熱單元之功能、及作為使填充層形成液182固化之固化單元之功能。The transfer robot CR transfers the substrate W transferred from the liquid processing unit M to the first heating unit D1. In the first heating unit D1, as shown in FIG. 10F, the substrate W is heated by the
填充層172包含：複數個進入部172b，其等分別進入至各凹部163；及連結部172a，其設置於圖案161之外側(上方)且將複數個進入部172b連結。The
繼而，搬送機械手CR將基板W自第1加熱單元D1搬出，並搬入至第2加熱單元D2。於第2加熱單元D2中，如圖10G所示，利用內置於第2基板保持器70之第2加熱器71加熱基板W。利用第2加熱器71，介隔基板W，加熱犧牲層170至較填充層形成液之熱硬化溫度高之犧牲層170之熱分解溫度為止。藉此，使犧牲層170分解並氣化(加熱氣化製程(步驟S37)、氣化製程)。因此，可利用將基板W加熱之簡單之方法，使犧牲層170氣化。如此，第2加熱器71具有作為介隔基板W將犧牲層170加熱之犧牲層加熱單元之功能、及作為使犧牲層170氣化之氣化單元之功能。Then, the transport robot CR carries out the substrate W from the first heating unit D1 and carries it into the second heating unit D2. In the second heating unit D2, as shown in FIG. 10G, the substrate W is heated by the
藉由犧牲層170氣化，而於填充層172與圖案161之間形成間隙174(參照圖11G)(間隙形成製程)。間隙174形成於構造體162之前端與填充層172之連結部172a之間、及圖案161之表面中之劃分凹部163之部分與填充層172之進入部172b之間。By vaporizing the
繼而，搬送機械手CR將基板W自第2加熱單元D2搬出，並搬入至翻轉單元6。於翻轉單元6中，利用夾持構件移動單元82使一夾持構件80朝向另一夾持構件80移動，藉此，基板W被一對夾持構件80夾持。繼而，如圖10H所示，夾持構件旋轉單元81使基板W旋轉180°。藉此，基板W由一對夾持構件80以使第1主面W1朝向下側之狀態保持為水平。於填充層172與圖案161之間形成有間隙174，故而填充層172未密接於圖案161之表面。因此，當第1主面W1朝向下側時，如圖11G所示，填充層172自然下落。藉此，填充層172被自第1主面W1剝離(剝離製程(步驟S38))。如此，翻轉單元6作為將填充層172自第1主面W1剝離之剝離單元發揮功能。Then, the transfer robot CR transfers the substrate W from the second heating unit D2 and transfers it into the reversing
其後，利用搬送機械手CR、IR使基板W返回至載具C，藉此，結束基板處理。After that, the substrate W is returned to the carrier C by the transfer robots CR and IR, thereby ending the substrate processing.
如上所述，根據本實施形態，於形成仿照圖案161之表面之犧牲層170之後，利用填充層172填埋圖案161之凹部163。因此，填充層172係以與圖案161之表面之間介置有犧牲層170之狀態形成，而非以密接於圖案161之表面之狀態形成。其後，藉由以形成有填充層172之狀態使犧牲層170氣化，犧牲層170自圖案161之表面與填充層172之間消失。As described above, according to the present embodiment, after the
此處，與本實施形態不同，假定未形成犧牲層170而利用填充層172填埋圖案161之凹部163之參考例之基板處理。設置有凹部163之圖案161之表面積相對較大，故而於執行參考例之基板處理之情形時，填充層172與圖案161之表面之密接度進一步提高。不易自第1主面W1剝離填充層172。Here, unlike the present embodiment, it is assumed that the substrate processing of the reference example in which the
因此，於進行本實施形態之基板處理之情形時，與進行參考例之基板處理之情形相比，可降低設置有凹部163之圖案161之表面與填充層172之密接度。由此，可於使犧牲層170氣化之後，容易地將填充層172自第1主面W1剝離填充層172。其結果，可縮短基板W之乾燥所需之時間。Therefore, when the substrate processing of the present embodiment is performed, the adhesion between the surface of the
根據本實施形態，氣化製程(加熱氣化製程(步驟S37))包含藉由使犧牲層170氣化，而於圖案161之表面與填充層172之間形成間隙174之間隙形成製程。因此，藉由使犧牲層170氣化，可進一步降低填充層172與圖案161之密接度。因此，可更容易地自第1主面W1剝離填充層172。According to this embodiment, the vaporization process (heating vaporization process (step S37)) includes a gap formation process of forming a
根據本實施形態，犧牲層形成製程包含犧牲層形成液供給製程，該犧牲層形成液供給製程係供給與圖案161發生反應而於第1主面W1形成犧牲層170之犧牲層形成液181。因此，藉由對第1主面W1供給犧牲層形成液181，可使犧牲層形成液181進入至凹部163之各個角落。因此，可確實地形成仿照圖案161之表面之犧牲層170。According to this embodiment, the sacrificial layer forming process includes a sacrificial layer forming liquid supply process that supplies the sacrificial
根據本實施形態，於形成犧牲層170之後且於填充層形成製程執行前，將作為去除液之兩親媒性之有機溶劑180供給至第1主面W1(去除液供給製程(步驟S33))。因此，可於形成填充層172之前自第1主面W1去除無助於犧牲層170之形成之犧牲層形成液181。因此，可減小犧牲層形成液181對填充層172之形成帶來之影響。According to the present embodiment, after the
根據本實施形態，藉由於液體處理單元M中執行將填充層形成液182填充於凹部163之填充製程(填充層形成液供給製程(步驟S34))、及使第1主面W1上之填充層形成液182固化之固化製程(加熱固化製程(步驟S37))，而於第1主面W1形成填充層172(填充層形成製程)。According to the present embodiment, the filling process of filling the filling
因此，藉由對第1主面W1供給填充層形成液182，可使填充層形成液182進入至凹部163之各個角落。藉此，可利用填充層形成液182置換殘留於凹部163之液體成分(尤其是兩親媒性之有機溶劑180)。於在該狀態下使填充層形成液182固化(硬化)而形成填充層172之後，將填充層172剝離，藉此可使基板W良好地乾燥。再者，於本實施形態中，由第2移動噴嘴13及第1加熱器61構成填充層形成單元。Therefore, by supplying the filling layer forming liquid 182 to the first main surface W1, the filling
根據本實施形態，於在填充層形成製程中在凹部163填充了填充層形成液之後且在固化製程執行前，執行旋轉排除製程(步驟S35)。因此，第1主面W1上之填充層形成液182之量減少。因此，可縮短填充層形成液182之固化所需之時間。According to the present embodiment, after the
根據本實施形態，填充層形成液182之固化溫度(硬化溫度)較犧牲層170之氣化溫度低。因此，可防止於填充層形成液182固化之前使犧牲層170氣化。又，於藉由加熱使填充層形成液182固化之後，使犧牲層170氣化，故而於犧牲層170之加熱開始時，已藉由為了實現填充層形成液182之固化而進行之加熱將犧牲層170加熱。因此，可縮短用於犧牲層170之氣化之加熱所需之時間。According to this embodiment, the solidification temperature (hardening temperature) of the filling
又，於本實施形態中，有機溶劑180(去除液)與填充層形成液182及犧牲層形成液181之兩者具有相容性(混合)。因此，即便於填充層形成液182與犧牲層形成液181未混合之情形時，亦可對基板W之第1主面W1供給有機溶劑180而以有機溶劑180置換基板W上之犧牲層形成液181，其後，對基板W之第1主面W1供給填充層形成液182而以填充層形成液182置換基板W上之有機溶劑180，藉此，可利用填充層形成液182填充凹部163。因此，犧牲層形成液181及填充層形成液182之選擇自由度提高。In addition, in the present embodiment, the organic solvent 180 (removal liquid) is compatible (mixed) with both the filling
本發明並不限定於以上所說明之實施形態，可進而以其他形態實施。The present invention is not limited to the embodiments described above, and can be implemented in other forms.
於本實施形態中，使用翻轉單元6作為剝離單元。然而，亦可使用除翻轉單元6以外之構件作為剝離單元。例如，如圖12所示，亦可代替翻轉單元6，設置捲取填充層172而將填充層172自基板W之第1主面W1剝離之捲取單元90。捲取單元90例如包含：輥91，其於基板W之第1主面W1上滾動；及輥移動單元92，其使輥91於沿著基板W之第1主面W1之方向上移動。又，如圖13所示，亦可代替翻轉單元6，設置藉由吸附填充層172而將填充層172自第1主面W1剝離之吸附單元95。吸附單元95包含：吸附嘴96，其抵接於填充層172；及減壓單元97，其將吸附嘴96內減壓而使填充層172吸附於吸附嘴96。再者，亦可使吸附嘴96之前端之吸附面之大小與填充層172之上表面之大小大致相同。In this embodiment, the
又，去除液並非必須為兩親媒性之有機溶劑。所謂兩親媒性之有機溶劑，亦可另行使用與犧牲層形成液及填充層形成液之各者具有相容性之液體作為去除液。於此情形時，只要第2移動噴嘴13構成為供給與犧牲層形成液、填充層形成液及兩親媒性之有機溶劑不同之液體作為去除液便可。又，於此情形時，兩親媒性之有機溶劑只要與沖洗液及犧牲層形成液之各者具有相容性便可，無需與填充層形成液具有相容性。In addition, the removal liquid does not have to be an amphiphilic organic solvent. As the so-called amphiphilic organic solvent, a liquid compatible with each of the sacrificial layer forming liquid and the filling layer forming liquid may be used as the removal liquid. In this case, the second moving
又，於與本實施形態不同，填充層形成液包含光硬化物質之情形時，代替第1加熱單元D1而將對基板W之第1主面W1照射光之光照射單元設置於各處理塔2。In addition, in a case where the filling layer forming liquid contains a photocurable substance different from the present embodiment, instead of the first heating unit D1, a light irradiation unit that irradiates light to the first main surface W1 of the substrate W is provided in each
又，於本實施形態中，分開地設置用以形成填充層之第1加熱單元D1、及用以使犧牲層氣化之第2加熱單元D2。然而，與本實施形態不同，處理塔2亦可代替第1加熱單元D1及第2加熱單元D2，而包含使基板W之溫度呈填充層形成液之固化溫度及犧牲層之氣化溫度之至少2個階段發生變化之單一之加熱單元。In this embodiment, the first heating unit D1 for forming the filling layer and the second heating unit D2 for vaporizing the sacrificial layer are separately provided. However, unlike the present embodiment, the
對本發明之實施形態進行了詳細說明，但該等只不過為用以明確本發明之技術性內容之具體例，本發明不應限定於該等具體例進行解釋，本發明之精神及範圍僅由隨附之申請專利範圍限定。The embodiments of the present invention have been described in detail, but these are only specific examples to clarify the technical content of the present invention, and the present invention should not be limited to these specific examples for explanation. The spirit and scope of the present invention are only The scope of the attached patent application is limited.
本申請案對應於2018年4月10日於日本專利局提出申請之日本專利特願2018-075587號，本申請案之全部內容係藉由引用而併入本文。This application corresponds to Japanese Patent Application No. 2018-075587 filed with the Japanese Patent Office on April 10, 2018. The entire contents of this application are incorporated herein by reference.
1‧‧‧基板處理裝置 2‧‧‧處理塔 3‧‧‧控制器 3A‧‧‧處理器 3B‧‧‧記憶體 5‧‧‧搬送路徑 6‧‧‧翻轉單元 10‧‧‧旋轉夾盤 11‧‧‧處理承杯 12‧‧‧第1移動噴嘴 13‧‧‧第2移動噴嘴 14‧‧‧第1固定噴嘴 15‧‧‧第2固定噴嘴 16‧‧‧護罩 16A‧‧‧第1護罩 16B‧‧‧第2護罩 17‧‧‧承杯 17A‧‧‧第1承杯 17B‧‧‧第2承杯 21‧‧‧旋轉基座 21A‧‧‧圓板部 21B‧‧‧筒狀部 22‧‧‧旋轉軸 23‧‧‧旋轉馬達 24‧‧‧吸引口 25‧‧‧吸引路徑 26‧‧‧吸引管 27‧‧‧吸引單元 28‧‧‧吸引閥 30‧‧‧側壁 31‧‧‧出入口 32‧‧‧擋閘 33‧‧‧擋閘開閉單元 36‧‧‧護罩升降單元 37‧‧‧第1噴嘴移動單元 38‧‧‧第2噴嘴移動單元 40‧‧‧藥液配管 41‧‧‧犧牲層形成液配管 42‧‧‧填充層形成液配管 43‧‧‧有機溶劑配管 44‧‧‧沖洗液配管 45‧‧‧清洗液配管 50‧‧‧藥液閥 51‧‧‧犧牲層形成液閥 52‧‧‧填充層形成液閥 53‧‧‧有機溶劑閥 54‧‧‧沖洗液閥 55‧‧‧清洗液閥 60‧‧‧第1基板保持器 61‧‧‧第1加熱器 62‧‧‧第1頂起銷 63‧‧‧第1加熱器通電單元 64‧‧‧第1基座部 65‧‧‧第1可動蓋部 66‧‧‧內部空間 67‧‧‧第1蓋部驅動單元 68‧‧‧第1頂起銷升降單元 70‧‧‧第2基板保持器 71‧‧‧第2加熱器 72‧‧‧第2頂起銷 73‧‧‧第2加熱器通電單元 74‧‧‧第2基座部 75‧‧‧第2可動蓋部 76‧‧‧內部空間 77‧‧‧第2蓋部驅動單元 78‧‧‧第2頂起銷升降單元 80‧‧‧夾持構件 80a‧‧‧抵接部 80b‧‧‧軸部 81‧‧‧夾持構件旋轉單元 82‧‧‧夾持構件移動單元 83‧‧‧軸承 84‧‧‧支持構件 90‧‧‧捲取單元 91‧‧‧輥 92‧‧‧輥移動單元 95‧‧‧吸附單元 96‧‧‧吸附嘴 97‧‧‧減壓單元 161‧‧‧圖案 162‧‧‧構造體 163‧‧‧凹部 170‧‧‧犧牲層 171‧‧‧液膜 172‧‧‧填充層 172a‧‧‧連結部 172b‧‧‧進入部 174‧‧‧間隙 180‧‧‧有機溶劑 181‧‧‧犧牲層形成液 182‧‧‧填充層形成液 A1‧‧‧旋轉軸線 A2‧‧‧旋轉中心軸 C‧‧‧載具 CR‧‧‧搬送機械手 D1‧‧‧第1加熱單元 D2‧‧‧第2加熱單元 IR‧‧‧搬送機械手 L1‧‧‧寬度 L2‧‧‧間隔 LP‧‧‧裝載埠口 M‧‧‧液體處理單元 R1‧‧‧腔室 R2‧‧‧腔室 R3‧‧‧腔室 S1‧‧‧步驟 S2‧‧‧步驟 S3‧‧‧步驟 S31‧‧‧步驟 S32‧‧‧步驟 S33‧‧‧步驟 S34‧‧‧步驟 S35‧‧‧步驟 S36‧‧‧步驟 S37‧‧‧步驟 S38‧‧‧步驟 T‧‧‧高度 W‧‧‧基板 W1‧‧‧第1主面 W2‧‧‧第2主面 X‧‧‧延長方向1‧‧‧Substrate processing device 2‧‧‧treatment tower 3‧‧‧Controller 3A‧‧‧ processor 3B‧‧‧Memory 5‧‧‧Transport path 6‧‧‧Flip unit 10‧‧‧rotating chuck 11‧‧‧Handle 12‧‧‧ First mobile nozzle 13‧‧‧ 2nd moving nozzle 14‧‧‧First fixed nozzle 15‧‧‧Second fixed nozzle 16‧‧‧Shield 16A‧‧‧First shield 16B‧‧‧2nd shield 17‧‧‧Cup 17A‧‧‧1st Cup 17B‧‧‧Second Cup 21‧‧‧Rotating base 21A‧‧‧Circular Board Department 21B‧‧‧Cylinder 22‧‧‧rotation axis 23‧‧‧rotating motor 24‧‧‧ attraction 25‧‧‧ attraction path 26‧‧‧ suction tube 27‧‧‧ Attraction Unit 28‧‧‧ Suction valve 30‧‧‧Side wall 31‧‧‧ Entrance 32‧‧‧Block 33‧‧‧Block opening and closing unit 36‧‧‧Shield lifting unit 37‧‧‧ No.1 nozzle moving unit 38‧‧‧ 2nd nozzle moving unit 40‧‧‧ liquid medicine piping 41‧‧‧Sacrificial layer forming liquid piping 42‧‧‧Filling layer forming liquid piping 43‧‧‧ Organic solvent piping 44‧‧‧Flushing liquid piping 45‧‧‧Cleaning liquid piping 50‧‧‧Medicine valve 51‧‧‧Sacrificial layer forming liquid valve 52‧‧‧Filling layer forming valve 53‧‧‧Organic solvent valve 54‧‧‧Flush valve 55‧‧‧Cleaning fluid valve 60‧‧‧First substrate holder 61‧‧‧First heater 62‧‧‧First jacking 63‧‧‧The first heater power unit 64‧‧‧First base 65‧‧‧The first movable cover 66‧‧‧Internal space 67‧‧‧ First cover drive unit 68‧‧‧The first jacking lifting unit 70‧‧‧ 2nd substrate holder 71‧‧‧ 2nd heater 72‧‧‧The second jack 73‧‧‧The second heater power unit 74‧‧‧The second base 75‧‧‧Second movable cover 76‧‧‧Internal space 77‧‧‧ 2nd cover drive unit 78‧‧‧The second jacking lift unit 80‧‧‧Clamping member 80a‧‧‧Abutment Department 80b‧‧‧Shaft 81‧‧‧Clamping member rotating unit 82‧‧‧Clamping member moving unit 83‧‧‧bearing 84‧‧‧Support component 90‧‧‧coiling unit 91‧‧‧roll 92‧‧‧Roll moving unit 95‧‧‧Adsorption unit 96‧‧‧Adsorption nozzle 97‧‧‧Decompression unit 161‧‧‧pattern 162‧‧‧Structure 163‧‧‧recess 170‧‧‧Sacrifice 171‧‧‧Liquid film 172‧‧‧filling layer 172a‧‧‧Link 172b‧‧‧ Entry Department 174‧‧‧ gap 180‧‧‧ organic solvent 181‧‧‧Sacrificial layer forming fluid 182‧‧‧fill layer forming fluid A1‧‧‧Rotation axis A2‧‧‧Rotating central axis C‧‧‧Vehicle CR‧‧‧Transfer robot D1‧‧‧The first heating unit D2‧‧‧The second heating unit IR‧‧‧Transfer robot L1‧‧‧Width L2‧‧‧Interval LP‧‧‧Loading port M‧‧‧Liquid handling unit R1‧‧‧ chamber R2‧‧‧chamber R3‧‧‧chamber S1‧‧‧Step S2‧‧‧Step S3‧‧‧Step S31‧‧‧Step S32‧‧‧Step S33‧‧‧Step S34‧‧‧Step S35‧‧‧Step S36‧‧‧Step S37‧‧‧Step S38‧‧‧Step T‧‧‧Altitude W‧‧‧Substrate W1‧‧‧ 1st main face W2‧‧‧ 2nd main face X‧‧‧Extend direction
圖1A係用以說明本發明之一實施形態之基板處理裝置之構成的模式性俯視圖。 圖1B係用以說明上述基板處理裝置之構成之模式性立面圖。 圖2係用以說明由上述基板處理裝置處理之基板之圖案形成面之構造的一例之模式性剖視圖。 圖3係用以說明上述基板處理裝置所具備之液體處理單元之構成例之模式性剖視圖。 圖4係用以說明上述基板處理裝置所具備之第1加熱單元之構成例之模式性剖視圖。 圖5係用以說明上述基板處理裝置所具備之第2加熱單元之構成例之模式性剖視圖。 圖6係用以說明上述基板處理裝置所具備之翻轉單元之構成例之模式性俯視圖。 圖7係用以說明上述基板處理裝置之主要部分之電性構成之區塊圖。 圖8係用以說明利用上述基板處理裝置進行之基板處理之一例之流程圖。 圖9係用以說明上述基板處理之乾燥處理之一例之流程圖。 圖10A係用以說明上述乾燥處理之一例之模式性剖視圖。 圖10B係用以說明上述乾燥處理之一例之模式性剖視圖。 圖10C係用以說明上述乾燥處理之一例之模式性剖視圖。 圖10D係用以說明上述乾燥處理之一例之模式性剖視圖。 圖10E係用以說明上述乾燥處理之一例之模式性剖視圖。 圖10F係用以說明上述乾燥處理之一例之模式性剖視圖。 圖10G係用以說明上述乾燥處理之一例之模式性剖視圖。 圖10H係用以說明上述乾燥處理之一例之模式性剖視圖。 圖11A係用以說明上述乾燥處理之一例中之基板之圖案形成面的構造之變化之模式性剖視圖。 圖11B係用以說明上述乾燥處理之一例中之基板之圖案形成面的構造之變化之模式性剖視圖。 圖11C係用以說明上述乾燥處理之一例中之基板之圖案形成面的構造之變化之模式性剖視圖。 圖11D係用以說明上述乾燥處理之一例中之基板之圖案形成面的構造之變化之模式性剖視圖。 圖11E係用以說明上述乾燥處理之一例中之基板之圖案形成面的構造之變化之模式性剖視圖。 圖11F係用以說明上述乾燥處理之一例中之基板之圖案形成面的構造之變化之模式性剖視圖。 圖11G係用以說明上述乾燥處理之一例中之基板之圖案形成面的構造之變化之模式性剖視圖。 圖11H係用以說明上述乾燥處理之一例中之基板之圖案形成面的構造之變化之模式性剖視圖。 圖12係用以說明變化例之基板處理裝置所具備之剝離單元之構成的模式圖。 圖13係用以說明另一變化例之基板處理裝置所具備之剝離單元之構成的模式圖。FIG. 1A is a schematic plan view for explaining the structure of a substrate processing apparatus according to an embodiment of the present invention. FIG. 1B is a schematic elevation view for explaining the structure of the substrate processing apparatus. 2 is a schematic cross-sectional view for explaining an example of the structure of a pattern-forming surface of a substrate processed by the substrate processing apparatus. 3 is a schematic cross-sectional view for explaining a configuration example of a liquid processing unit included in the substrate processing apparatus. 4 is a schematic cross-sectional view for explaining a configuration example of a first heating unit included in the substrate processing apparatus. 5 is a schematic cross-sectional view for explaining a configuration example of a second heating unit included in the substrate processing apparatus. FIG. 6 is a schematic plan view for explaining a configuration example of an inversion unit included in the substrate processing apparatus. 7 is a block diagram for explaining the electrical structure of the main part of the substrate processing apparatus. 8 is a flowchart for explaining an example of substrate processing performed by the above substrate processing apparatus. FIG. 9 is a flowchart for explaining an example of the drying process of the above substrate process. FIG. 10A is a schematic cross-sectional view for explaining an example of the drying process. FIG. 10B is a schematic cross-sectional view for explaining an example of the drying process. 10C is a schematic cross-sectional view for explaining an example of the above-mentioned drying process. FIG. 10D is a schematic cross-sectional view for explaining an example of the drying process. FIG. 10E is a schematic cross-sectional view for explaining an example of the drying process. 10F is a schematic cross-sectional view for explaining an example of the above-mentioned drying process. 10G is a schematic cross-sectional view for explaining an example of the above-mentioned drying process. FIG. 10H is a schematic cross-sectional view for explaining an example of the drying process. 11A is a schematic cross-sectional view for explaining the change in the structure of the pattern forming surface of the substrate in one example of the above-mentioned drying process. 11B is a schematic cross-sectional view for explaining the change in the structure of the pattern-forming surface of the substrate in one example of the above-mentioned drying process. FIG. 11C is a schematic cross-sectional view for explaining the change in the structure of the pattern forming surface of the substrate in one example of the above-mentioned drying process. 11D is a schematic cross-sectional view for explaining the change in the structure of the pattern forming surface of the substrate in one example of the above-mentioned drying process. 11E is a schematic cross-sectional view for explaining the change in the structure of the pattern-forming surface of the substrate in one example of the above-mentioned drying process. 11F is a schematic cross-sectional view for explaining the change in the structure of the pattern-forming surface of the substrate in one example of the above-mentioned drying process. 11G is a schematic cross-sectional view for explaining the change in the structure of the pattern forming surface of the substrate in one example of the above-mentioned drying process. 11H is a schematic cross-sectional view for explaining the change in the structure of the pattern-forming surface of the substrate in one example of the above-mentioned drying process. 12 is a schematic diagram for explaining the structure of a peeling unit included in a substrate processing apparatus according to a modified example. 13 is a schematic diagram for explaining the structure of a peeling unit included in a substrate processing apparatus according to another modification.
161‧‧‧圖案 161‧‧‧pattern
162‧‧‧構造體 162‧‧‧Structure
163‧‧‧凹部 163‧‧‧recess
170‧‧‧犧牲層 170‧‧‧Sacrifice
171‧‧‧液膜 171‧‧‧Liquid film
182‧‧‧填充層形成液 182‧‧‧fill layer forming fluid
W‧‧‧基板 W‧‧‧Substrate
W1‧‧‧第1主面 W1‧‧‧ 1st main face
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| JP2018075587A JP7013309B2 (en) | 2018-04-10 | 2018-04-10 | Board processing method and board processing equipment |
| JP2018-075587 | 2018-04-10 |
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| TW201447998A (en) * | 2013-03-18 | 2014-12-16 | Shibaura Mechatronics Corp | Substrate processing device and substrate processing method |
| US20160133477A1 (en) * | 2014-11-07 | 2016-05-12 | Rohm And Haas Electronic Materials, Llc | Methods of forming relief images |
| TW201719743A (en) * | 2015-08-07 | 2017-06-01 | Tokyo Electron Ltd | Substrate processing device and substrate processing method |
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| JP2011124313A (en) * | 2009-12-09 | 2011-06-23 | Tokyo Electron Ltd | Substrate processing system, substrate processing apparatus, substrate processing method, and recording medium with substrate processing program recorded |
| JP2013042094A (en) * | 2011-08-19 | 2013-02-28 | Central Glass Co Ltd | Wafer cleaning method |
| JP6983571B2 (en) * | 2016-09-27 | 2021-12-17 | 株式会社Ｓｃｒｅｅｎホールディングス | Board processing method and board processing equipment |
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| TW201430938A (en) * | 2012-10-11 | 2014-08-01 | Lam Res Corp | Delamination drying apparatus and method |
| TW201447998A (en) * | 2013-03-18 | 2014-12-16 | Shibaura Mechatronics Corp | Substrate processing device and substrate processing method |
| US20160133477A1 (en) * | 2014-11-07 | 2016-05-12 | Rohm And Haas Electronic Materials, Llc | Methods of forming relief images |
| TW201719743A (en) * | 2015-08-07 | 2017-06-01 | Tokyo Electron Ltd | Substrate processing device and substrate processing method |
| CN107871657A (en) * | 2016-09-27 | 2018-04-03 | 株式会社斯库林集团 | Substrate processing method using same and substrate board treatment |
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| WO2019198575A1 (en) | 2019-10-17 |
| TW201946151A (en) | 2019-12-01 |
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