TWI692885B

TWI692885B - High stability quantum dot unit, wavelength conversion device and light emitting device

Info

Publication number: TWI692885B
Application number: TW108120574A
Authority: TW
Inventors: 陳櫻芳; 陳學仕
Original assignee: 清颺科技有限公司
Priority date: 2019-06-14
Filing date: 2019-06-14
Publication date: 2020-05-01
Also published as: TW202046520A

Abstract

A conventional quantum dot (QD) unit commonly comprises at least one optical core and a moisture barrier layer for enclosing the optical core. Particularly, the present invention provides a defect covering layer comprising a cover portion, a plurality of gap filling portions and a plurality of hole filling portions, wherein the gap filling portions and the hole filling portions are connected to an inner surface of the cover portion. According to the particular design of the present invention, the defect covering layer is adopted for covering the moisture barrier layer, so as to make the gap filling portions be inserted into a plurality of micro gaps contained by the moisture barrier layer, respectively. Moreover, a plurality of micro holes contained by the moisture barrier layer would also embedded with the hole filling portions, respectively. By such arrangement, reliability and stability of the QD unit is therefore enhanced.

Description

高穩定性量子點單元、波長轉換模組及發光裝置High-stability quantum dot unit, wavelength conversion module and light-emitting device

本發明係關於量子點的技術領域，尤指可應用於一波長轉換模組與/或一發光裝置之中的一種高穩定性量子點單元。The invention relates to the technical field of quantum dots, in particular to a high-stability quantum dot unit that can be applied in a wavelength conversion module and/or a light-emitting device.

眾所周知，傳統的LED元件使用螢光粉作為光轉換材料。值得注意的是，隨著量子點(Quantum dot, QD)的製造技術越發成熟，以量子點作為光轉換材料的量子點發光二極體(Quantum dots light-emitting diode, QLED)逐漸受到重視。As we all know, traditional LED components use phosphor as a light conversion material. It is worth noting that as the manufacturing technology of quantum dots (Quantum dots, QDs) becomes more mature, quantum dots light-emitting diodes (QLEDs) that use quantum dots as light conversion materials are gradually gaining attention.

圖1顯示傳統的一種量子點的側剖視結構圖。如圖1所示，量子點1’的傳統結構係包括：一光學核心10’以及包覆該光學核心10’的一鈍化層11’。其中，該光學核心10’可以是量子點(例如CdSe 或 CdS)或具殼-核結構之量子點(例如CdSe/ZnS)，且該鈍化層11’常見為一有機配體，例如: 氨丙基三甲氧基矽烷(APS)。為了提高傳統量子點1’的穩定性，台灣專利公開號TW200611959A特別教示於該鈍化層11’之上進一步地覆上一無機保護層12’。圖2即顯示包含無機保護層的量子點的側剖視結構圖。其中，該無機保護層12’的材料為二氧化矽(silica)，此時該鈍化層11’可以由胺基配體材料製成，有助於該無機保護層12’形成於其上。FIG. 1 shows a side cross-sectional structure diagram of a conventional quantum dot. As shown in FIG. 1, the conventional structure of quantum dots 1'includes: an optical core 10' and a passivation layer 11' covering the optical core 10'. Wherein, the optical core 10' may be a quantum dot (such as CdSe or CdS) or a quantum dot with a shell-core structure (such as CdSe/ZnS), and the passivation layer 11' is usually an organic ligand, such as: aminopropyl Trimethoxysilane (APS). In order to improve the stability of the conventional quantum dot 1', Taiwan Patent Publication No. TW200611959A specifically teaches that the passivation layer 11' is further covered with an inorganic protective layer 12'. FIG. 2 shows a side cross-sectional structure diagram of quantum dots including an inorganic protective layer. Wherein, the material of the inorganic protective layer 12' is silicon dioxide. In this case, the passivation layer 11' may be made of an amine-based ligand material, which helps to form the inorganic protective layer 12' thereon.

在一些應用中，會以單一無機保護層12’同時包覆多個量子點1’於其中，以獲得一量子點單元。圖3即顯示量子點單元的側剖視圖。特別地，圖3係顯示，即使利用所述無機保護層12’ 包覆一個或多個量子點1’，仍無法有效地提升使量子點1’的可靠度與/或穩定度。主要原因在於以二氧化矽(silica)製成的無機保護層12’具有天生的缺陷，這些缺陷可能是微孔洞(void)121’或微隙縫122’。因此，在長期使用如圖3所示的量子點單元之後，水氣(water vapor)或氧氣(oxygen)還是會透過這些微孔洞121’或微隙縫122’進入無機保護層12’內部，進而侵襲各該量子點1’。In some applications, a single inorganic protective layer 12' may simultaneously coat multiple quantum dots 1'therein to obtain a quantum dot unit. Figure 3 shows a side cross-sectional view of a quantum dot unit. In particular, Fig. 3 shows that even if one or more quantum dots 1'are coated with the inorganic protective layer 12', the reliability and/or stability of the quantum dots 1'cannot be effectively improved. The main reason is that the inorganic protective layer 12' made of silicon dioxide has inherent defects, which may be micro-voids 121' or micro-slits 122'. Therefore, after long-term use of the quantum dot unit shown in FIG. 3, water vapor or oxygen will still enter the inorganic protective layer 12' through these micropores 121' or micro slits 122', and then Invade each quantum dot 1'.

由上述說明可知，如何消除存在於無機保護層12’之中的微孔洞121’或微隙縫122’以提升單一量子點1’或包含多個量子點1’的量子點單元之可靠度與穩定度，於是成為相當重要的課題。有鑑於此，本案之發明人係極力加以研究創作，而終於研發完成本發明之一種高穩定性量子點單元及包含該高穩定性量子點單元的一種波長轉換裝置。As can be seen from the above description, how to eliminate the micro-holes 121' or micro-slots 122' existing in the inorganic protective layer 12' to improve the reliability and reliability of a single quantum dot 1'or a quantum dot unit containing multiple quantum dots 1' Stability has become a very important issue. In view of this, the inventor of the present case made great efforts to study and create, and finally developed a high stability quantum dot unit and a wavelength conversion device including the high stability quantum dot unit of the present invention.

本發明之主要目的在於提供一種高穩定性量子點單元。習知的量子點單元通常包括一水氧阻障層以及包覆於該水氧阻障層之中的至少一光學核心。本發明特別設計一缺陷遮蓋層，其包括一覆蓋部、形成於該覆蓋部內面的複數個填縫部、以及形成於該覆蓋部內面的複數個填孔部，並以此於該覆蓋部覆蓋於該水氧阻障層之上。於該覆蓋部覆蓋於該水氧阻障層之上時，該複數個填縫部係填入該水氧阻障層內部的複數微隙縫，且該複數個填孔部係同時填入該水氧阻障層內部的複數微孔洞。如此方式，係能夠有效地阻絕外界的水氣或氧氣經由微隙縫或孔洞進入水氧阻障層內部，進而提升量子點單元的可靠度與穩定性。The main objective of the present invention is to provide a quantum dot unit with high stability. The conventional quantum dot unit generally includes a water-oxygen barrier layer and at least one optical core wrapped in the water-oxygen barrier layer. The present invention specifically designs a defect masking layer, which includes a covering portion, a plurality of caulking portions formed on the inner surface of the covering portion, and a plurality of hole filling portions formed on the inner surface of the covering portion, and thereby covering the covering portion with Above the water-oxygen barrier layer. When the covering part covers the water-oxygen barrier layer, the plurality of caulking parts are filled into the plurality of micro-gap inside the water-oxygen barrier layer, and the plurality of hole filling parts are simultaneously filled with the water-oxygen barrier Multiple micro-holes inside the barrier layer. In this way, it can effectively block the outside water or oxygen from entering the water and oxygen barrier layer through the micro slits or holes, thereby improving the reliability and stability of the quantum dot unit.

為了達成上述本發明之主要目的，本案發明人係提供所述高穩定性量子點單元的一實施例，係包括：至少一光學核心；一水氧阻障層，包覆該至少一光學核心；以及一缺陷遮蓋層，包括：一覆蓋部，覆蓋於該水氧阻障層之上；複數個填縫部，形成於該覆蓋部的內面；及複數個填孔部，形成於該覆蓋部的內面；其中，於該覆蓋部覆蓋於該水氧阻障層之上時，該複數個填縫部係填入該水氧阻障層內部的複數微隙縫，且該複數個填孔部係同時填入該水氧阻障層部的複數微孔洞。 In order to achieve the above-mentioned main objective of the present invention, the present inventor provides an embodiment of the high-stability quantum dot unit, which includes: At least one optical core; A water-oxygen barrier layer covering the at least one optical core; and A defect masking layer, including: A covering part covering the water-oxygen barrier layer; A plurality of caulking parts formed on the inner surface of the covering part; and A plurality of hole-filling parts are formed on the inner surface of the covering part; Wherein, when the covering part covers the water-oxygen barrier layer, the plurality of caulking parts are filled into the plurality of micro-slots inside the water-oxygen barrier layer, and the plurality of hole-filling parts are simultaneously filled into the Plural micropores in the water-oxygen barrier layer.

並且，本發明同時提供包含前述高穩定性量子點單元的一種波長轉換模組，Moreover, the present invention also provides a wavelength conversion module including the aforementioned high-stability quantum dot unit,

進一步地，本發明又提供包含前述波長轉換模組的一種發光裝置。Further, the present invention further provides a light-emitting device including the foregoing wavelength conversion module.

為了能夠更清楚地描述本發明所提出之高穩定性量子點單元、波長轉換模組及發光裝置，以下將配合圖式，詳盡說明本發明之較佳實施例。In order to be able to more clearly describe the high-stability quantum dot unit, wavelength conversion module and light-emitting device proposed by the present invention, the following will explain the preferred embodiments of the present invention in detail with reference to the drawings.

圖4顯示本發明之一種高穩定性量子點單元的製程示意圖。圖4之中的(a)圖顯示一水氧阻障層12包覆複數個光學核心11，其中該水氧阻障層12之內部具有複數微隙縫121與複數微孔洞122。另一面，圖4之中的(b)圖顯示一缺陷遮蓋層13，其包括：一覆蓋部131、形成於該覆蓋部131內面的複數個填縫部132、以及形成於該覆蓋部131內面的複數個填孔部133。如圖4之中的(c)圖所示，將該缺陷遮蓋層13覆於該水氧阻障層12之上，即獲得本發明之高穩定性量子點單元1。值得注意的是，於該覆蓋部131覆蓋於該水氧阻障層12之上時，該複數個填縫部132係填入該水氧阻障層12內部的複數微隙縫121，且該複數個填孔部133係同時填入該水氧阻障層12內部的複數微孔洞122。FIG. 4 shows a schematic diagram of the manufacturing process of a high-stability quantum dot unit of the present invention. FIG. 4(a) shows a water-oxygen barrier layer 12 covering a plurality of optical cores 11, wherein the water-oxygen barrier layer 12 has a plurality of micro-slots 121 and a plurality of micro-holes 122 therein. On the other hand, (b) in FIG. 4 shows a defect masking layer 13, which includes: a covering portion 131, a plurality of caulking portions 132 formed on the inner surface of the covering portion 131, and formed in the covering portion 131 A plurality of hole-filling parts 133 on the surface. As shown in (c) of FIG. 4, the defect masking layer 13 is coated on the water-oxygen barrier layer 12 to obtain the high-stability quantum dot unit 1 of the present invention. It is worth noting that when the covering portion 131 covers the water-oxygen barrier layer 12, the plurality of caulking portions 132 are filled into the plurality of micro-slots 121 inside the water-oxygen barrier layer 12, and the plurality of The hole-filling portion 133 simultaneously fills the plurality of micro-holes 122 inside the water-oxygen barrier layer 12.

所述光學核心11為尺寸大小介於2nm至7nm之間、3nm至10nm之間、4nm至12nm之間、4nm至14nm之間、或5nm至20nm之間的量子點。簡單地說，光學核心11可以是紅光量子點、綠光量子點、藍光量子點、上述兩者之組合、或上述三者之組合。示範性的幾種不同的量子點材料係整理於下表(1)之中。表(1)

The optical core 11 is a quantum dot with a size between 2 nm to 7 nm, 3 nm to 10 nm, 4 nm to 12 nm, 4 nm to 14 nm, or 5 nm to 20 nm. In short, the optical core 11 may be a red light quantum dot, a green light quantum dot, a blue light quantum dot, a combination of the two, or a combination of the three. Exemplary types of different quantum dot materials are organized in the following table (1). Table 1)

必須特別說明的是，表(1)僅僅列出所述光學核心11的示範性材料，並非用以對其製程材料作出限制。舉例而言，可以在該光學核心11的外表面進一步連接複數有機配體，用以藉由配體交換法以有助於使得所述水氧阻障層12包覆該複數有機配體與該光學核心11。常用的有機配體可為下列任一者：烷基膦 (Alkyl phosphines)、氧化膦(phosphine oxides)、膦酸(phosphonic acids)、具巰基(thiol group)之有機化合物、具胺基(amine group)之有機化合物、或羧酸。另一方面，熟悉量子點或波長轉換膜設計與製造的材料工程師勢必已經熟知所述水氧阻障層12的經用的製程材料，例如：二氧化矽(Silica)、透光金屬氧化物、聚矽氧烷(例如:矽酮)、含降冰片烯(Norbornene)結構的聚合物、或其它任何具水氣阻隔特性的有機聚合物。常用的透光金屬氧化物有Al ₂O ₃、TiO ₂、與SiTiO _4-x。並且，具水氣阻隔特性的有機聚合物的種類繁多，諸如丙烯酸異冰片酯、丙烯酸月桂酯、三羥甲基丙烷三丙烯酸酯、苯氧芐酯等，於此不再一一列舉。 It must be particularly noted that Table (1) only lists exemplary materials of the optical core 11 and is not intended to limit its process materials. For example, a plurality of organic ligands may be further connected to the outer surface of the optical core 11 to help the water-oxygen barrier layer 12 coat the plurality of organic ligands and the Optical core 11. Commonly used organic ligands can be any of the following: Alkyl phosphines, phosphine oxides, phosphonic acids, organic compounds with thiol groups, and amine groups ) Of organic compounds, or carboxylic acids. On the other hand, materials engineers who are familiar with the design and manufacture of quantum dots or wavelength conversion films must already be familiar with the process materials used for the water-oxygen barrier layer 12, such as: silicon dioxide (Silica), light-transmitting metal oxide, Polysiloxane (for example: silicone), polymer containing norbornene (Norbornene) structure, or any other organic polymer with water vapor barrier properties. Commonly used transparent metal oxides are Al ₂ O ₃ , TiO ₂ , and SiTiO _4-x . In addition, there are many types of organic polymers with water vapor barrier properties, such as isobornyl acrylate, lauryl acrylate, trimethylolpropane triacrylate, phenoxybenzyl ester, etc., which are not listed here.

必須特別說明的是，本發明係特別設計缺陷遮蓋層13的組成，其中該填縫部132與該填孔部133皆由一無機材料或一低分子量材料製成，且該填孔部133的分子量大於該填縫部132的分子量。值得說明的是，分子量小的材料具有較小的表面張力，因此容易滲入隙縫或細縫之中。由此可知，本發明選擇以小分子量的材料作為該缺陷遮蓋層13的填縫部132，其目的在於令所述填縫部132可以完全地填入或滲入該水氧阻障層12內部的該些微隙縫121之中。根據一般的定義，分子量小於500 Dalton的材料即被稱為小分子量材料；然而，本發明之中的小分子量可以定義為1000 Dalton以下。該填縫部132與該填孔部133的幾種不同的示範性材料係整理於下表(2)之中。表(2)

It must be particularly noted that the present invention specifically designs the composition of the defect masking layer 13, wherein the caulked portion 132 and the hole-filled portion 133 are both made of an inorganic material or a low molecular weight material, and the molecular weight of the hole-filled portion 133 It is larger than the molecular weight of the caulked portion 132. It is worth noting that materials with a small molecular weight have a small surface tension, so they easily penetrate into gaps or slits. It can be seen that the present invention selects a material with a small molecular weight as the caulking portion 132 of the defect masking layer 13, the purpose of which is to allow the caulking portion 132 to be completely filled or infiltrated into the water and oxygen barrier layer 12 In the gap 121. According to the general definition, a material with a molecular weight of less than 500 Dalton is called a small molecular weight material; however, the small molecular weight in the present invention can be defined as 1000 Dalton or less. Several different exemplary materials of the caulked portion 132 and the hole-filled portion 133 are listed in the following table (2). Table 2)

當然也可以使用分子量相對較高的材料作為該填孔部133。如圖5A所示的包覆多個光學核心的水氧阻障層的側剖視圖所示，若填孔部133為大分子量材料，則填孔部133不但無法完全填滿該水氧阻障層12內部的複數微孔洞122，甚至無法填入任一個微隙縫121。相反地，如圖5B所示的包覆多個光學核心的水氧阻障層的側剖視圖所示，選擇適合的小分子量材料作為該填孔部133，才能令所述填孔部133完全填滿該水氧阻障層12內部的複數微孔洞122。Of course, a material with a relatively high molecular weight may be used as the hole-filling portion 133. As shown in the side cross-sectional view of the water-oxygen barrier layer covering multiple optical cores shown in FIG. 5A, if the hole-filling portion 133 is a large molecular weight material, the hole-filling portion 133 cannot only completely fill the water-oxygen barrier layer The plurality of micro-holes 122 inside 12 cannot even fill any micro-slot 121. Conversely, as shown in the side cross-sectional view of the water-oxygen barrier layer covering multiple optical cores shown in FIG. 5B, a suitable small molecular weight material is selected as the hole-filling portion 133, so that the hole-filling portion 133 is completely filled A plurality of micro-holes 122 inside the water-oxygen barrier layer 12 are filled.

請參閱圖6，係顯示使用本發明之高穩定性量子點單元的發光二極體晶片的側面剖視圖。如圖6所示，該發光二極體晶片1a係於結構上包括：一絕緣主體101、一導線架102、一LED晶粒103、以及一波長轉換模組；其中，該波長轉換模組包括一透光封裝層20與包覆於該透光封裝層20之中的複數個高穩定性量子點單元1。另一方面，該絕緣主體101係具有一LED設置凹槽1011。並且，該導線架102係設置於該絕緣主體101內部，並具有至少二焊接部1021與至少二電性連接部1022；其中，所述焊接部1021係曝露於該LED設置凹槽1011之內，且所述電性連接部1022係穿出於該絕緣主體101之外。另一方面，該LED晶粒103係設置於該LED設置凹槽1011之內並電性連接至該至少二焊接部1021，用以發出具有一第一波長的一第一色光，例如：紫外光、紫藍光、藍光、上述任兩者之組合、或上述任兩者以上之組合。Please refer to FIG. 6, which is a side cross-sectional view of a light-emitting diode chip using the highly stable quantum dot unit of the present invention. As shown in FIG. 6, the light-emitting diode chip 1a is structurally comprised of an insulating body 101, a lead frame 102, an LED die 103, and a wavelength conversion module; wherein the wavelength conversion module includes A light-transmitting encapsulation layer 20 and a plurality of high-stability quantum dot units 1 wrapped in the light-transmitting encapsulation layer 20. On the other hand, the insulating body 101 has an LED recess 1011. Moreover, the lead frame 102 is disposed inside the insulating body 101, and has at least two soldering portions 1021 and at least two electrical connection portions 1022; wherein the soldering portion 1021 is exposed in the LED setting groove 1011, Moreover, the electrical connection portion 1022 penetrates outside the insulating body 101. On the other hand, the LED die 103 is disposed in the LED recess 1011 and is electrically connected to the at least two soldering portions 1021 for emitting a first color light having a first wavelength, for example: ultraviolet Light, violet-blue light, blue light, a combination of any two of the above, or a combination of any two or more of the above.

波長轉換模組包括一透光封裝層20係設置於該LED設置凹槽1011之中，且其材料可為下列任一者：矽膠、壓克力(聚甲基丙烯酸甲酯)、聚碳酸酯、聚氯乙烯、聚苯乙烯、聚乙烯對苯二甲酸酯、或環氧樹脂。另外，圖6係顯示該絕緣主體101之頂部係設有一透鏡106，並且一散熱器105係設置於該絕緣主體101之內部；其中，該散熱器105的一乘載部1051係曝露於該LED設置凹槽1011之內以乘載該LED晶粒103，並且該散熱器105的一散熱部1052係穿出於該絕緣主體101之外。必須補充說明的是，光學核心11的種類或組成會隨著所使用的LED晶粒103類型而有所不同。LED晶粒103與光學核心11的示範性選用係整理於下表(3)之中。表(3)

The wavelength conversion module includes a light-transmissive encapsulation layer 20 disposed in the LED recess 1011, and its material can be any of the following: silicone, acrylic (polymethyl methacrylate), polycarbonate , Polyvinyl chloride, polystyrene, polyethylene terephthalate, or epoxy resin. In addition, FIG. 6 shows that a lens 106 is provided on the top of the insulating body 101, and a heat sink 105 is disposed inside the insulating body 101; wherein, a loading portion 1051 of the heat sink 105 is exposed to the LED The recess 1011 is provided to carry the LED die 103, and a heat dissipation portion 1052 of the heat sink 105 penetrates outside the insulating body 101. It must be added that the type or composition of the optical core 11 will vary with the type of LED die 103 used. The exemplary selection of the LED die 103 and the optical core 11 are summarized in the following table (3). table 3)

值得注意的是，隨著LED背光源被廣泛地應用至顯示器、平板電腦、與智慧型手機，LED的電子元件的尺寸被要求必須進一步地微縮至微米尺寸。Mini LED 又名「次毫米發光二極體」，最早是由晶元光電(EPISTAR Corporation)所提出，晶粒的對角線長度介於50微米至60微米之間的 LED。Micro LED 則是新一代顯示技術，是將 LED 晶粒進一步地微小化，使其晶粒的對角線長度小於 50 微米；同時，透過薄膜化、陣列化與單獨驅動發光的技術來實現每個LED晶粒之圖元單獨定址。晶片封裝級(Chip scale package, CSP)目前已經被廣泛地應用於Mini LED之製造。It is worth noting that as LED backlights are widely used in displays, tablet computers, and smartphones, the size of LED electronic components must be further reduced to micron size. Mini LED, also known as "sub-millimeter light-emitting diode", was first proposed by Epistar Corporation (EPISTAR Corporation), and the diagonal length of the crystal grain is between 50 microns and 60 microns. Micro LED is a new generation of display technology, which further miniaturizes the LED crystal grains so that the diagonal length of the crystal grains is less than 50 microns; at the same time, each technology is realized through thin-film formation, array formation, and individual driving light emission technology. The picture elements of the LED die are individually addressed. Chip scale package (CSP) has been widely used in the manufacture of Mini LED.

本發明之高穩定性量子點單元也能夠被應用在晶片封裝級的LED電子元件之中。圖7顯示習知的晶片封裝級LED電子元件的側面剖視圖。如圖7所示，該晶片封裝級LED電子元件1b的基本結構係包括：一LED晶粒11b與覆於該LED晶粒11b之上的一光轉換膜，其中，該LED晶粒11b係以其電極111b電連接至一基板2b(例如:PCB)，且該波長轉換膜包括一透光封裝層12b與包覆於該透光封裝層12b之中的複數個高穩定性量子點單元1。The high-stability quantum dot unit of the present invention can also be applied to LED electronic components at the chip packaging level. 7 shows a side cross-sectional view of a conventional chip package-level LED electronic component. As shown in FIG. 7, the basic structure of the chip package-level LED electronic component 1b includes: an LED die 11b and a light conversion film overlying the LED die 11b, wherein the LED die 11b is The electrode 111b is electrically connected to a substrate 2b (for example, PCB), and the wavelength conversion film includes a light-transmitting encapsulation layer 12b and a plurality of high-stability quantum dot units 1 wrapped in the light-transmitting encapsulation layer 12b.

如此，上述係已完整且清楚地說明本發明之高穩定性量子點單元、波長轉換模組及發光裝置；並且，經由上述可知本發明係具有下列之優點：As such, the above is a complete and clear description of the high-stability quantum dot unit, wavelength conversion module, and light-emitting device of the present invention; and, through the above, the present invention has the following advantages:

(1)量子點單元包括通常一水氧阻障層12以及包覆於該水氧阻障層12之中的至少一光學核心11。本發明特別設計一缺陷遮蓋層13，其包括一覆蓋部131、形成於該覆蓋部131內面的複數個填縫部132、以及形成於該覆蓋部131內面的複數個填孔部133，並以此於該覆蓋部131覆蓋於該水氧阻障層12之上。於該覆蓋部131覆蓋於該水氧阻障層12之上時，該複數個填縫部132係填入該水氧阻障層12內部的複數微隙縫121，且該複數個填孔部133係同時填入該水氧阻障層12內部的複數微孔洞122。如此方式，係能夠有效地阻絕外界的水氣或氧氣經由微隙縫或孔洞進入水氧阻障層內部。(1) The quantum dot unit includes a water-oxygen barrier layer 12 and at least one optical core 11 encapsulated in the water-oxygen barrier layer 12. The present invention specifically designs a defect masking layer 13 which includes a covering portion 131, a plurality of caulking portions 132 formed on the inner surface of the covering portion 131, and a plurality of hole filling portions 133 formed on the inner surface of the covering portion 131, and In this way, the covering portion 131 covers the water-oxygen barrier layer 12. When the covering portion 131 covers the water-oxygen barrier layer 12, the plurality of caulking portions 132 are filled into the plurality of micro-slots 121 inside the water-oxygen barrier layer 12, and the plurality of hole-filling portions 133 are At the same time, a plurality of micropores 122 inside the water-oxygen barrier layer 12 are filled. In this way, the system can effectively block the external moisture or oxygen from entering the water-oxygen barrier layer through the micro slits or holes.

必須加以強調的是，上述之詳細說明係針對本發明可行實施例之具體說明，惟該實施例並非用以限制本發明之專利範圍，凡未脫離本發明技藝精神所為之等效實施或變更，均應包含於本案之專利範圍中。It must be emphasized that the above detailed description is a specific description of possible embodiments of the present invention, but this embodiment is not intended to limit the patent scope of the present invention, and any equivalent implementation or change without departing from the technical spirit of the present invention, Should be included in the patent scope of this case.

＜本發明＞<The present invention>

1:高穩定性量子點單元1: High stability quantum dot unit

11:光學核心11: Optical core

12:水氧阻障層12: Water oxygen barrier

121:微隙縫121: Micro slit

122:微孔洞122: micro holes

13:缺陷遮蓋層13: Defect cover layer

131:覆蓋部131: Covering part

132:填縫部132: caulk

133:填孔部133: Filling hole

1a:發光二極體晶片1a: LED chip

101:絕緣主體101: Insulation body

102:導線架102: lead frame

103:LED晶粒103: LED die

20:透光封裝層20: Light-transmitting encapsulation layer

1011:LED設置凹槽1011: LED setting groove

1021:焊接部1021: Welding Department

1022:電性連接部1022: Electrical connection

106:透鏡106: lens

105:散熱器105: radiator

1051:乘載部1051: Passenger compartment

1052:散熱部1052: Radiator

11b:LED晶粒11b: LED die

111b:電極111b: electrode

2b:基板2b: substrate

12b:透光封裝層12b: Light-transmitting encapsulation layer

1b:晶片封裝級LED電子元件1b: Chip package level LED electronic components

＜習知＞<Xizhi>

1’:量子點1’: Quantum dots

10’:光學核心10’: Optical core

11’:鈍化層11’: Passivation layer

12’:無機保護層12’: Inorganic protective layer

121’:微孔洞121’: Micro holes

122’:微隙縫122’: micro slit

圖1顯示傳統的一種量子點的側剖視結構圖；圖2顯示包含無機保護層的量子點的側剖視結構圖；圖3顯示量子點單元的側剖視圖；圖4顯示本發明之一種高穩定性量子點單元的製程示意圖；圖5A顯示包覆多個光學核心的水氧阻障層的側剖視圖；圖5B顯示包覆多個光學核心的水氧阻障層的側剖視圖；圖6顯示使用本發明之高穩定性量子點單元的發光二極體晶片的側面剖視圖；以及圖7顯示習知的晶片封裝級LED電子元件的側面剖視圖。 Figure 1 shows a side cross-sectional structure diagram of a conventional quantum dot; 2 shows a side cross-sectional structure diagram of quantum dots including an inorganic protective layer; Figure 3 shows a side cross-sectional view of a quantum dot unit; 4 shows a schematic diagram of the manufacturing process of a high stability quantum dot unit of the present invention; 5A shows a side cross-sectional view of a water-oxygen barrier layer covering multiple optical cores; 5B shows a side cross-sectional view of a water-oxygen barrier layer covering multiple optical cores; 6 shows a side cross-sectional view of a light-emitting diode wafer using the highly stable quantum dot unit of the present invention; and 7 shows a side cross-sectional view of a conventional chip package-level LED electronic component.

1:高穩定性量子點單元 1: High stability quantum dot unit

11:光學核心 11: Optical core

12:水氧阻障層 12: Water oxygen barrier

121:微隙縫 121: Micro slit

122:微孔洞 122: micro holes

13:缺陷遮蓋層 13: Defect cover layer

131:覆蓋部 131: Covering part

132:填縫部 132: caulk

133:填孔部 133: Filling hole

Claims

一種高穩定性量子點單元，包括：至少一光學核心；一水氧阻障層，包覆該至少一光學核心；以及一缺陷遮蓋層，包括：一覆蓋部，覆蓋於該水氧阻障層之上；複數個填縫部，形成於該覆蓋部的內面；及複數個填孔部，形成於該覆蓋部的內面；其中，該填縫部與該填孔部皆由一無機材料或一低分子量材料製成，且該填孔部的分子量大於該填縫部的分子量；其中，於該覆蓋部覆蓋於該水氧阻障層之上時，該複數個填縫部係分別填入該水氧阻障層內部的複數微隙縫，且該複數個填孔部係分別填入該水氧阻障層內部的複數微孔洞。 A high-stability quantum dot unit, comprising: at least one optical core; a water-oxygen barrier layer covering the at least one optical core; and a defect masking layer, comprising: a covering part covering the water-oxygen barrier layer Above; a plurality of caulking portions formed on the inner surface of the covering portion; and a plurality of caulking portions formed on the inner surface of the covering portion; wherein, the caulking portion and the caulking portion are made of an inorganic material or a Made of low molecular weight material, and the molecular weight of the hole-filling part is greater than that of the caulking part; wherein, when the covering part covers the water-oxygen barrier layer, the plurality of caulking parts are filled with the water-oxygen A plurality of micro-slots inside the barrier layer, and the plurality of hole-filling portions are filled into the plurality of micro-holes inside the water-oxygen barrier layer, respectively.

如申請專利範圍第1項所述之高穩定性量子點單元，其中，該光學核心可為下列任一者：II-VI族量子點、III-V族量子點、具有殼-核結構之II-VI族量子點、具有殼-核結構之III-V族量子點、具有合金結構之非球形II-VI量子點、上述任兩者之組合、或上述任兩者以上之組合。 The high-stability quantum dot unit as described in item 1 of the patent application range, wherein the optical core may be any of the following: II-VI group quantum dots, III-V group quantum dots, II with a shell-core structure -Group VI quantum dots, group III-V quantum dots having a shell-core structure, non-spherical II-VI quantum dots having an alloy structure, a combination of any two of the above, or a combination of any two or more of the above.

如申請專利範圍第1項所述之高穩定性量子點單元，其中，該光學核心為一量子點，且該量子點的尺寸大小係選自於下列任一種尺寸大小範圍：2-7nm、3-10nm、4-12nm、4-14nm、或5-20nm。 The high stability quantum dot unit as described in item 1 of the patent application scope, wherein the optical core is a quantum dot, and the size of the quantum dot is selected from any one of the following size ranges: 2-7nm, 3 -10nm, 4-12nm, 4-14nm, or 5-20nm.

如申請專利範圍第1項所述之高穩定性量子點單元，其中，該光學核心的外表面係連接有複數有機配體，用以藉由配體交換法令所述水氧阻障層包覆該複數有機配體與該光學核心。 The high-stability quantum dot unit as described in item 1 of the patent application scope, wherein the outer surface of the optical core is connected with a plurality of organic ligands for coating the water-oxygen barrier layer by a ligand exchange method The plural organic ligands and the optical core.

如申請專利範圍第1項所述之高穩定性量子點單元，其中，該水氧阻障層與該覆蓋部皆由一水氧阻障材料製成，且該水氧阻障材料可為下列任一者：二氧化矽(Silica)、透明金屬氧化物、聚矽氧烷、含降冰片烯結構的聚合物、或具水氣阻隔特性的有機聚合物。 The high-stability quantum dot unit as described in item 1 of the patent scope, wherein the water-oxygen barrier layer and the covering portion are made of a water-oxygen barrier material, and the water-oxygen barrier material can be as follows Either: Silica, transparent metal oxide, polysiloxane, polymer with norbornene structure, or organic polymer with water vapor barrier properties.

如申請專利範圍第4項所述之高穩定性量子點單元，其中，該有機配體可為下列任一者：烷基膦(Alkyl phosphines)、氧化膦(phosphine oxides)、膦酸(phosphonic acids)、具巰基(thiol group)之有機化合物、具胺基(amine group)之有機化合物、或羧酸。 The high stability quantum dot unit as described in item 4 of the patent application range, wherein the organic ligand may be any of the following: alkyl phosphines (Alkyl phosphines), phosphine oxides (phosphine oxides), phosphonic acids (phosphonic acids ), an organic compound with a thiol group, an organic compound with an amine group, or a carboxylic acid.

如申請專利範圍第1項所述之高穩定性量子點單元，其中，該無機材料可為下列任一者：二氧化矽(Silica)或透明金屬氧化物。 The high-stability quantum dot unit as described in item 1 of the patent application range, wherein the inorganic material may be any one of the following: silicon dioxide (Silica) or transparent metal oxide.

如申請專利範圍第1項所述之高穩定性量子點單元，其中，該低分子量材料可為下列任一者：低分子量聚矽氧烷、透明金屬氧化物、含降冰片烯結構的低聚物、或具水氣阻隔特性的有機低聚物。 The high-stability quantum dot unit as described in item 1 of the patent application range, wherein the low molecular weight material may be any of the following: low molecular weight polysiloxane, transparent metal oxide, oligomer containing norbornene structure Substances, or organic oligomers with water vapor barrier properties.

一種波長轉換模組，包括：一透光封裝層；以及複數個如申請專利範圍第1項至第8項之中任一項所述之高穩定性量子點單元，係包覆於該透明封裝層之中。 A wavelength conversion module, comprising: a light-transmitting encapsulation layer; and a plurality of high-stability quantum dot units as described in any one of patent application items 1 to 8, which are wrapped in the transparent package Among the layers.

一種發光裝置，其具有一發光元件與一波長轉換模組；其中，該波長轉換模組包括一透光封裝層以及複數個如申請專利範圍第1項至第8項之中任一項所述之高穩定性量子點單元，且該複數個高穩定性量子點單元係包覆於該透明封裝層之中。 A light-emitting device having a light-emitting element and a wavelength conversion module; wherein the wavelength conversion module includes a light-transmitting encapsulation layer and a plurality of items as described in any one of items 1 to 8 of the patent application High stability quantum dot unit, and the plurality of high stability quantum dot units are encapsulated in the transparent encapsulation layer.