TWI689608B - 濺鍍靶材以及使用其的濺鍍成膜方法 - Google Patents

濺鍍靶材以及使用其的濺鍍成膜方法 Download PDF

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Publication number
TWI689608B
TWI689608B TW105116409A TW105116409A TWI689608B TW I689608 B TWI689608 B TW I689608B TW 105116409 A TW105116409 A TW 105116409A TW 105116409 A TW105116409 A TW 105116409A TW I689608 B TWI689608 B TW I689608B
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TW
Taiwan
Prior art keywords
film
sputtering
target
sputtering target
plate
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TW105116409A
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English (en)
Chinese (zh)
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TW201641729A (zh
Inventor
渡邉寛人
Original Assignee
日商住友金屬礦山股份有限公司
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Publication of TW201641729A publication Critical patent/TW201641729A/zh
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Publication of TWI689608B publication Critical patent/TWI689608B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW105116409A 2015-05-29 2016-05-26 濺鍍靶材以及使用其的濺鍍成膜方法 TWI689608B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-110620 2015-05-29
JP2015110620A JP6716863B2 (ja) 2015-05-29 2015-05-29 スパッタリングターゲット及びこれを用いたスパッタリング成膜方法

Publications (2)

Publication Number Publication Date
TW201641729A TW201641729A (zh) 2016-12-01
TWI689608B true TWI689608B (zh) 2020-04-01

Family

ID=57441440

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105116409A TWI689608B (zh) 2015-05-29 2016-05-26 濺鍍靶材以及使用其的濺鍍成膜方法

Country Status (5)

Country Link
JP (1) JP6716863B2 (ja)
KR (1) KR20180014007A (ja)
CN (1) CN107614746B (ja)
TW (1) TWI689608B (ja)
WO (1) WO2016194696A1 (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066381A (en) * 1988-04-15 1991-11-19 Sharp Kabushiki Kaisha Target unit
CN101509127A (zh) * 2008-02-15 2009-08-19 爱发科材料股份有限公司 溅射靶的制造方法、溅射靶的洗涤方法、溅射靶及溅射装置
JP2015025170A (ja) * 2013-07-26 2015-02-05 大同特殊鋼株式会社 シリコンターゲット

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60193964U (ja) * 1984-05-31 1985-12-24 ホ−ヤ株式会社 マグネトロンスパツタ装置のタ−ゲツト
JPS63105961A (ja) * 1986-10-22 1988-05-11 Hitachi Ltd 磁性薄膜合金の製造方法
JP2635362B2 (ja) * 1988-04-15 1997-07-30 シャープ株式会社 ターゲットユニット
JP2000319776A (ja) * 1999-05-06 2000-11-21 Sti Technology Kk スパッタリング用ターゲットとこれを用いたカラーフィルタ用ブラックマトリクスの製造方法
JP2004052082A (ja) * 2002-07-23 2004-02-19 Sumitomo Metal Mining Co Ltd スパッタリングターゲット組立体
JP4882332B2 (ja) * 2005-10-11 2012-02-22 大日本印刷株式会社 スパッタ装置
CN202390523U (zh) * 2011-12-16 2012-08-22 深圳市创益科技发展有限公司 一种组合式磁控溅射靶材
JP5968740B2 (ja) * 2012-09-20 2016-08-10 株式会社アルバック ターゲット装置、スパッタ装置、及び、ターゲット装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066381A (en) * 1988-04-15 1991-11-19 Sharp Kabushiki Kaisha Target unit
CN101509127A (zh) * 2008-02-15 2009-08-19 爱发科材料股份有限公司 溅射靶的制造方法、溅射靶的洗涤方法、溅射靶及溅射装置
JP2015025170A (ja) * 2013-07-26 2015-02-05 大同特殊鋼株式会社 シリコンターゲット

Also Published As

Publication number Publication date
JP2016222975A (ja) 2016-12-28
KR20180014007A (ko) 2018-02-07
CN107614746A (zh) 2018-01-19
JP6716863B2 (ja) 2020-07-01
WO2016194696A1 (ja) 2016-12-08
CN107614746B (zh) 2020-12-29
TW201641729A (zh) 2016-12-01

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