TWI689063B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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TWI689063B
TWI689063B TW105124368A TW105124368A TWI689063B TW I689063 B TWI689063 B TW I689063B TW 105124368 A TW105124368 A TW 105124368A TW 105124368 A TW105124368 A TW 105124368A TW I689063 B TWI689063 B TW I689063B
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island
semiconductor device
punch
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lead
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窪田晋也
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日商艾普凌科有限公司
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Abstract

一種散熱性良好的半導體裝置的製造方法，使載置半導體晶片的島狀物成形的成形模具包含內沖10、沖導11及外沖12，推頂成形模具而形成島狀物的凹部14、突出壁8及薄壁部9。使所述島狀物的背面露出，且藉由樹脂來密封島狀物的表面及側面、薄壁部、半導體晶片、內部引線及導線。

Description

半導體裝置及其製造方法
本發明是有關於一種載置半導體晶片（chip）的島狀物（island）的背面從密封樹脂露出的半導體裝置及其製造方法。
通常，在載置半導體晶片的島狀物的背面從密封樹脂露出的高散熱型半導體裝置中，當將元件搭載部的背面推頂至密封模具來填充密封樹脂時，有時密封樹脂會流入元件搭載部的背面與密封模具之間，從而在島狀物的背面側產生薄毛邊。此時會產生下述問題，即，島狀物背面側的露出部的實效面積減少而散熱效果下降。
因此採取以下對策：藉由在島狀物的背面側形成凹形（凹穴）與島狀物背面的突出壁，從而加大密封時的突出壁向下模具的按壓，以防止薄毛邊侵入至島狀物背面部的中央部（例如參照專利文獻1）。 現有技術文獻 專利文獻
專利文獻1：日本專利特開2013-175795號公報
[發明所欲解決之問題] 然而，如專利文獻1所示，藉由在島狀物的背面側形成凹形（凹穴），雖可在一定程度上抑制薄毛邊朝向島狀物背面的侵入，但並未完全抑制。而且，根據凹形的形狀，在樹脂毛邊去除步驟中，進入凹部內的樹脂毛邊有可能無法充分去除，從而在基板安裝時產生因樹脂毛邊造成的空隙（void），導致散熱特性下降。
本發明是有鑒於所述問題而完成，其課題在於提供一種防止薄毛邊附著於島狀物背面的半導體裝置的製造方法。 [解決問題之手段]
為了解決所述課題，使用了以下方案。
首先，在載置半導體晶片的島狀物背面從密封樹脂露出的半導體裝置的製造方法中，其特徵在於包含如下步驟：使包含島狀物、內部引線（inner lead）及外部引線（outer lead）的引線框架（lead frame）成型；在所述島狀物上載置半導體晶片；將所述半導體晶片與所述內部引線經由導線（wire）而連接；以及對所述島狀物、所述半導體晶片、所述內部引線及所述導線進行樹脂密封，所述使引線框架成形的步驟是將成為島狀物的片材（sheet）置於模（die）上，將包含內沖（inner punch）、沖導（punch guide）及外沖（outer punch）的成形模具推頂至片材，而使與內沖抵接的凹部、與沖導抵接的突出壁及與外沖抵接的薄壁部同時成形。
而且，半導體裝置的製造方法的特徵在於，在所述使引線框架成形的步驟中，使用所述內沖與所述沖導的階差為可變的成形模具。
而且，半導體裝置的製造方法的特徵在於，在所述使引線框架成形的步驟中，使用所述內沖與所述外沖的間隔為可變的成形模具。
而且，半導體裝置的製造方法的特徵在於，在所述樹脂密封步驟中，在模具內的空腔（cavity）的中央設置澆口（gate），並在所述空腔的中央偏下方設置所述薄壁部，從所述澆口注入樹脂。 [發明的效果]
藉由使用所述方案，可抑制在島狀物的背面側產生的薄毛邊，確保島狀物的露出部的實效面積，從而可獲得高散熱特性。
以下，基於圖式來說明用於實施本發明的形態。
圖1是本發明的第一實施形態的半導體裝置的剖面圖。
半導體晶片2被載置於島狀物7上，半導體晶片2上的電極（未圖示）經由導線3而與內部引線5電性連接。島狀物7、半導體晶片2、導線3是由密封樹脂4所覆蓋。並且，為了提高散熱性，島狀物7的背面從密封樹脂4露出。從內部引線5延伸的外部引線6也從密封樹脂4露出，其端部連接於配線基板等。
此處，本發明的半導體裝置1的特徵之處在於，島狀物7遍及背面的周圍的整周而具有朝下方突出的突出壁8及由其包圍的凹部14，並且在島狀物7的側面的上端部具有朝側方突出的薄壁部9。島狀物7的表面與薄壁部9的上表面為相同高度，形成平面。突出壁8的高度可控制在0.05 mm～0.10 mm的範圍，寬度可控制在0.05 mm～0.20 mm的範圍。藉由在島狀物7的背面的周圍設置具有此種高度的突出壁8，從而在對載置於島狀物7上的半導體晶片2進行樹脂密封時，突出壁8被按壓至樹脂密封用的下模具（未圖示），基於以下的理由，可防止密封樹脂的浸入，從而抑制薄毛邊的產生。
即，本發明中，在島狀物7的側面的上端部設有朝側方突出的薄壁部9，該薄壁部9在樹脂密封時起到將島狀物7按壓至下模具的作用。雖未圖示，但注入樹脂的澆口被設置在由上模具與下模具所形成的空腔的縱向的中央附近，從此處朝向周圍的模具供給樹脂。由於島狀物7的薄壁部9位於所述中央附近更偏下方，因此薄壁部9上方的樹脂體積遠大於下方的樹脂體積，由於將島狀物7按壓至下模具，因此可防止樹脂通過突出壁8之下浸入凹部14內。
如以上所說明般，本發明中，由於在島狀物的周圍的下端部設置朝下方突出的突出壁及由其包圍的凹部，並且在島狀物7的周圍的上端部設置朝側方突出的薄壁部，因此可抑制在島狀物7的背面產生薄毛邊，減小露出部的實效面積縮小的可能，從而可確保高散熱性。
圖2是表示半導體裝置的島狀物部的成形步驟的側面圖。
此處，將圖1所示的島狀物7上下相反地進行圖示。對島狀物7的厚度進行了誇大描繪。將包含島狀物的材料即銅或銅合金的片材，以島狀物7的半導體晶片載置面朝下的方式而置於模13的平坦面上，藉由成形模具來使島狀物7的背面成形。成形模具包含內沖10、沖導11及外沖12，藉由內沖10而在島狀物7的背面形成凹部14。在內沖10的兩端設有沖導11，藉此來決定突出壁8的高度，藉由在沖導11的外側所設的外沖12來形成薄壁部9。
即，以凹部14與內沖10抵接，突出壁8與沖導11抵接，薄壁部9與外沖12抵接的方式來成形。本發明中，由內沖10與外沖12這兩者來擠壓出島狀物7，因此將有大量的銅構件升起至沖導11中。因此，突出壁8可設為最大0.10 mm為止的高度，並且，藉由與該突出壁8同時形成的薄壁部9的存在，可在樹脂密封時防止密封樹脂的浸入，從而可抑制薄毛邊的產生。
另外，藉由成形模具的內沖10、沖導11與外沖12的相互高度和成形模具對片材的推頂壓力的調整，可調整凹部14的深度、突出壁8的高度與薄壁部9厚度。此處所用的成形模具可使內沖10與沖導11的階差為可變，而且使內沖10與外沖12的間隔為可變，藉此，可獲得所需高度與寬度的突出壁。
而且，由包含施加有鍍銀的銅或銅合金的片材藉由衝壓而形成內部引線5、外部引線6、島狀物7。島狀物7在衝壓後進行釋壓（depress）加工。島狀物7在衝壓後，根據需要來進行翹曲矯正。在釋壓加工後將片材切割（cut）成框架尺寸，完成引線框架的製作。
圖3是本發明的第一實施形態的半導體裝置的透視平面圖。在島狀物7上，經由導電性或絕緣性接合膜來載置半導體晶片2，半導體晶片2上的電極（未圖示）經由包含金（Au）或銅（Cu）的導線3而與內部引線5電性連接。島狀物7、半導體晶片2、導線3由密封樹脂4所覆蓋。從內部引線5延伸的外部引線6為自密封樹脂4露出、且其端部連接於配線基板等的結構。而且，藉由將薄壁部9設置於島狀物7的整個周圍，從而增加密封樹脂4與島狀物7的接觸面積，提高密接性，藉此，亦起到防止島狀物7從密封樹脂4脫落的作用。
圖4是本發明的第一實施形態的半導體裝置的背面圖。
從密封樹脂4的側面引出有多根外部引線6，在密封樹脂的中央區域，配置有在整個周圍設有突出壁8的島狀物7。該島狀物7背面的凹部14露出，從而可確保高散熱性。
圖式中所用的符號如下。
1．．．半導體裝置2．．．半導體晶片3．．．導線4．．．密封樹脂5．．．內部引線6．．．外部引線7．．．島狀物8．．．突出壁9．．．薄壁部10．．．內沖11．．．沖導12．．．外沖13．．．模14．．．凹部
圖1是本發明的第一實施形態的半導體裝置的剖面圖。 圖2是表示本發明的第一實施形態的半導體裝置中所使用的引線框架（島狀物）的製造步驟的側面圖。 圖3是本發明的第一實施形態的半導體裝置的（透視）平面圖。 圖4是本發明的第一實施形態的半導體裝置的背面圖。
1‧‧‧半導體裝置
2‧‧‧半導體晶片
3‧‧‧導線
4‧‧‧密封樹脂
5‧‧‧內部引線
6‧‧‧外部引線
7‧‧‧島狀物
8‧‧‧突出壁
9‧‧‧薄壁部
14‧‧‧凹部

Claims (4)

  1. 一種半導體裝置的製造方法，是載置半導體晶片的島狀物的背面從密封樹脂露出的半導體裝置的製造方法，所述半導體裝置的製造方法的特徵在於包含如下步驟：使包含島狀物、內部引線及外部引線的引線框架成型；在所述島狀物上載置半導體晶片；將所述半導體晶片與所述內部引線經由導線而連接；以及對所述島狀物、所述半導體晶片、所述內部引線及所述導線進行樹脂密封，所述使引線框架成形的步驟是將成為島狀物的片材置於模上，推頂包含內沖、沖導及外沖的成形模具，而使與所述內沖抵接的凹部、與所述沖導抵接的突出壁及與所述外沖抵接的薄壁部同時成形。
  2. 如申請專利範圍第1項所述的半導體裝置的製造方法，其中，在所述使引線框架成形的步驟中，使用所述內沖與所述沖導的階差為可變的成形模具。
  3. 如申請專利範圍第1項所述的半導體裝置的製造方法，其中，在所述使引線框架成形的步驟中，使用所述內沖與所述外沖的間隔為可變的成形模具。
  4. 如申請專利範圍第1項所述的半導體裝置的製造方法，其中，在所述樹脂密封步驟中，在模具內的空腔的中央設置澆口，並在所述空腔的中央偏下方設置所述薄壁部，從所述澆口注入樹 脂。
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