TWI685127B - A photo detector and producing method thereof - Google Patents
A photo detector and producing method thereof Download PDFInfo
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- TWI685127B TWI685127B TW107143668A TW107143668A TWI685127B TW I685127 B TWI685127 B TW I685127B TW 107143668 A TW107143668 A TW 107143668A TW 107143668 A TW107143668 A TW 107143668A TW I685127 B TWI685127 B TW I685127B
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- 238000000034 method Methods 0.000 title claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000002245 particle Substances 0.000 claims abstract description 38
- 239000010931 gold Substances 0.000 claims abstract description 33
- 229910052737 gold Inorganic materials 0.000 claims abstract description 33
- 239000011787 zinc oxide Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000007864 aqueous solution Substances 0.000 claims description 13
- 150000003839 salts Chemical class 0.000 claims description 13
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 239000003638 chemical reducing agent Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- NJSVDVPGINTNGX-UHFFFAOYSA-N [dimethoxy(propyl)silyl]oxymethanamine Chemical compound CCC[Si](OC)(OC)OCN NJSVDVPGINTNGX-UHFFFAOYSA-N 0.000 claims description 3
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000004246 zinc acetate Substances 0.000 claims description 3
- DCQBZYNUSLHVJC-UHFFFAOYSA-N 3-triethoxysilylpropane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCS DCQBZYNUSLHVJC-UHFFFAOYSA-N 0.000 claims description 2
- 238000001338 self-assembly Methods 0.000 claims 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910021505 gold(III) hydroxide Inorganic materials 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000000007 visual effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- -1 3-mercaptopropyl Chemical group 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
一種感測器的製造方法，特別是一種具有高透光性且在可見光波段下可檢測的光感測器。 A manufacturing method of a sensor, in particular, a light sensor with high transparency and detectable in the visible light band.
物聯網時代崛起，當中物聯網最核心的技術就是感測器。感測器是物聯網最重要的四肢、五官，一切資訊都要透過感測器來感知、收集資訊、測量，因此感測元件也隨著科技進步不斷發展，更結合在科技、物理、醫療等，讓人類生活更便利也更安全。 The rise of the Internet of Things era, the core technology of which is the sensor. Sensors are the most important limbs and facial features of the Internet of Things. All information must be sensed, collected, and measured through the sensors. Therefore, the sensor components have been continuously developed with the advancement of technology, and are more integrated in technology, physics, medical treatment, etc. To make human life more convenient and safer.
在所有感測器中，光感測器是可應用最為廣泛的檢測器之一。其中氧化鋅是最熱門的感光材料，氧化鋅具有材料性質無毒、便宜及極佳的熱穩定性等特性，因而被廣泛利用於紫外光感測器，但由於氧化鋅對光學的限制，因此只限於紫外光的檢測。 Among all sensors, light sensors are one of the most widely used detectors. Among them, zinc oxide is the most popular photosensitive material. Zinc oxide has the characteristics of non-toxic, cheap and excellent thermal stability, so it is widely used in ultraviolet light sensors. However, due to the optical limitations of zinc oxide, only zinc oxide Limited to the detection of ultraviolet light.
為解決該氧化鋅材料只對於該紫外光波段的檢測限制，本發明首先提供一種光感測器，該光感測器包括：一基板；一閘極層，設於該基板之一底面；一介電層形成於該基板之一頂面； 一奈米金粒子層形成於該介電層之表面；一通道層形成於該介電層表面；以及兩個電極間隔且分別形成於該通道層之表面。 In order to solve the limitation of the detection of the zinc oxide material only in the ultraviolet band, the present invention first provides a light sensor, the light sensor includes: a substrate; a gate layer, which is provided on a bottom surface of the substrate; a A dielectric layer is formed on a top surface of the substrate; A nano-gold particle layer is formed on the surface of the dielectric layer; a channel layer is formed on the surface of the dielectric layer; and two electrodes are spaced apart and formed on the surface of the channel layer, respectively.
上述該光感測器的製造方法，其步驟包含：於一基板上利用電漿輔助化學氣相沉積形成一介電層；於該介電層表面鏈結一奈米金粒子層，利用旋轉塗佈方式將通道層批覆於該介電層表面；於該通道層表面利用一金屬光罩及一熱蒸鍍法鍍出兩個電極，於該基板底面利用一金屬光罩及一熱蒸鍍法鍍出一閘極。 The manufacturing method of the photo sensor described above includes the steps of: forming a dielectric layer on a substrate using plasma-assisted chemical vapor deposition; linking a layer of nano-gold particles on the surface of the dielectric layer, using spin coating The channel layer is coated on the surface of the dielectric layer in a cloth way; two electrodes are plated on the surface of the channel layer using a metal mask and a thermal evaporation method, and a metal mask and a thermal evaporation method are used on the bottom surface of the substrate A gate is plated.
其中，該介電層為二氧化矽(SiO2)或氮化矽(SiNx)，利用低溫製程約300℃電漿輔助氣相沉積製成，且該電漿處理可改善該薄膜表面粗糙度，使表面粗糙度小於3nm。 Wherein, the dielectric layer is made of silicon dioxide (SiO 2 ) or silicon nitride (SiN x ), which is produced by plasma assisted vapor deposition at a low temperature process of about 300° C., and the plasma treatment can improve the surface roughness of the film To make the surface roughness less than 3nm.
其中，該奈米金粒子利用一四氯化金酸(HAuCl4．3H2O)搭配一檸檬酸(Na3C6H5O7)還原劑，以比例1mM：38.8mM合成出13nm粒徑大小的該奈米金粒子，該奈米金粒子在吸收光譜中有一特性吸收波帶，為一表面電漿共振波段，該奈米金粒子在吸收相對應的光能量後產生一熱載子(Hot electrons)，當該熱載子獲得足夠能量即可藉由一熱載子擴散(Thermionic diffusion)跨越接面能量進入該通道層。 Among them, the nano-gold particles used monotetrachloroauric acid (HAuCl 4 .3H 2 O) combined with a citric acid (Na 3 C 6 H 5 O 7 ) reducing agent to synthesize a 13nm particle size at a ratio of 1mM: 38.8mM The size of the nano-gold particles, the nano-gold particles have a characteristic absorption band in the absorption spectrum, which is a surface plasmon resonance band, the nano-gold particles generate a hot carrier after absorbing the corresponding light energy ( Hot electrons), when the hot carrier obtains enough energy, it can enter the channel layer by a thermal carrier diffusion (Thermionic diffusion) across the junction energy.
該奈米金粒子層，利用3-氨基丙基三乙氧基矽烷(C9H23NO3Si,APTMS)或3-巰丙基三乙氧基矽烷(C9H22O3SSi,MPTES)自組鏈結，將該奈米金粒子層鏈結於介電層上。 The nano-gold particle layer uses 3-aminopropyltriethoxysilane (C 9 H 23 NO 3 Si, APTMS) or 3-mercaptopropyltriethoxysilane (C 9 H 22 O 3 SSi, MPTES ) Self-assembled link, link the nano gold particle layer on the dielectric layer.
其中，該通道層為一氧化鋅薄膜，利用一溶膠-凝膠法(Sol-Gel method)備製出高透光性一氧化鋅有機金屬鹽水溶液，並利用旋轉塗佈方式將該氧化鋅有機金屬鹽水溶液塗佈於該介電層表面形成該氧化鋅薄膜。 Wherein, the channel layer is a zinc monoxide film, a sol-gel method (Sol-Gel method) is used to prepare a highly transmissive zinc monoxide organic metal salt aqueous solution, and the zinc oxide is organically formed by spin coating A metal salt aqueous solution is coated on the surface of the dielectric layer to form the zinc oxide film.
其中，該氧化鋅薄膜利用一氧電漿處理(Oxygen plasma treatment)使其漏電流減少，電流開關比增加至107以上。 Wherein the zinc oxide thin film using an oxygen plasma process (Oxygen plasma treatment) so as to reduce the leakage current, the switching current ratio is increased to more than 107.
其中，該閘極層及兩個該電極利用一金屬光罩及以一熱蒸鍍法，於真空度5×10-6torr下鍍出。 Wherein, the gate layer and the two electrodes are plated under a vacuum degree of 5×10 -6 torr using a metal mask and a thermal evaporation method.
其中，該介電層厚度為100nm。 The thickness of the dielectric layer is 100nm.
其中，該奈米金粒子粒徑大小為13nm。 Among them, the particle size of the nano-gold particles is 13 nm.
其中，該閘極層及兩個該電極厚度為300nm。 The thickness of the gate layer and the two electrodes are 300 nm.
藉由上述說明可知，本發明具有以下優點：1.本發明所提之該一種光感測器及其製造方法，使用該溶膠-凝膠法(Sol-Gel method)備製出高透光性一氧化鋅有機金屬鹽水溶液，並使用旋轉塗佈方式生成一氧化鋅薄膜，該氧化鋅薄膜為一通道層，利用該氧化鋅薄膜通道層的高透光性於可見光波段將可見光直接穿透該通道層至下一層該奈米金粒子層中；該奈米金粒子會對於可見光波段產生表面電漿共振，進而激發該通道層的一電子-電洞或產生額外的光電子進入該通道層中，改變了原始電訊號，以達到偵測目的。 It can be seen from the above description that the present invention has the following advantages: 1. The light sensor and the manufacturing method thereof provided by the present invention, using the Sol-Gel method to prepare high light transmittance A zinc oxide organic metal salt aqueous solution, and a spin coating method is used to generate a zinc oxide film. The zinc oxide film is a channel layer, and the high light transmittance of the zinc oxide film channel layer penetrates the visible light directly in the visible light band The channel layer to the next layer of the nano-gold particles; the nano-gold particles will generate surface plasmon resonance in the visible light band, which in turn excites an electron-hole in the channel layer or generates additional photoelectrons into the channel layer, Changed the original signal to achieve the purpose of detection.
10‧‧‧閘級層 10‧‧‧Gate level
20‧‧‧基板 20‧‧‧ substrate
30‧‧‧介電層 30‧‧‧dielectric layer
40‧‧‧奈米金粒子層 40‧‧‧Nano gold particle layer
40A‧‧‧奈米金粒子 40A‧‧‧Nano gold particles
50‧‧‧通道層 50‧‧‧channel layer
51‧‧‧電子 51‧‧‧Electronics
52‧‧‧電洞 52‧‧‧Electric Cave
60‧‧‧電極 60‧‧‧electrode
圖1是本發明較佳實施例的示意圖。 FIG. 1 is a schematic diagram of a preferred embodiment of the present invention.
圖2是本發明較佳實施例的流程圖。 FIG. 2 is a flowchart of a preferred embodiment of the present invention.
圖3是本發明較佳實施例的步驟流程示意圖。 FIG. 3 is a schematic flowchart of steps in a preferred embodiment of the present invention.
圖4是本發明較佳實施例的第二較佳實施例示意圖。 4 is a schematic diagram of a second preferred embodiment of the preferred embodiment of the present invention.
為能詳細瞭解本發明的技術特徵及實用功效，並可依照說明書的內容來實施，進一步以如圖式所示的較佳實施例，詳細說明如下。 In order to understand the technical features and practical effects of the present invention in detail, and can be implemented in accordance with the content of the specification, the preferred embodiments shown in the drawings are further described in detail below.
請參考圖1，為本發明之光感測器的較佳實施例，該光感測器包括：一基板20；一閘極層10，設於該基板20之一底面；一介電層30，形成於該基板20之一頂面；一奈米金粒子層40，形成於於該介電層30之表面；一通道層50，形成於該介電層30表面；以及兩個電極60間隔且分別形成於該通道層50之表面。
Please refer to FIG. 1, which is a preferred embodiment of the photo sensor of the present invention. The photo sensor includes: a
請參考圖2、圖3，為本發明之光感測器製造方法的較佳實施例，製造方法與步驟包含： Please refer to FIGS. 2 and 3, which are preferred embodiments of the manufacturing method of the light sensor of the present invention. The manufacturing method and steps include:
STEP1. 取一矽基板20經過標準濕式清潔(RCA)進行清洗。
STEP1. Take a
STEP2. 於該基板20表面形成一介電層30，本實施例之該介電層30係以低溫製程約300℃之電漿輔助化學氣相沉積成長厚度約10nm的二氧化矽(Sio2)或氮化矽(SiNx)。
STEP2. A
STEP3. 使用氧電漿對該介電層30表面進行清潔處理，使該介電層30表面形成親水性及改善表面粗糙度。
STEP3. Use oxygen plasma to clean the surface of the
STEP4. 備製一奈米金粒子40A：使用四氯化金酸(HAuCl4．3H2O)搭配檸檬酸(Na3C6H5O7)還原劑，以比例1mM：38.8mM合成出13nm粒徑大小的該奈米金粒子40A。
STEP4. Preparation of one
STEP5. 於該介電層30表面鏈結一奈米金粒子層40，本實施例利用3-氨基丙基三乙氧基矽烷(C9H23NO3Si,APTMS)或3-巰丙基三乙氧基矽烷(C9H22O3SSi,MPTES)，將該奈米金粒子層40鏈結於該介電層30表面。
STEP5. A nano-
STEP6. 備製一氧化鋅有機金屬鹽水溶液，將一溶質醋酸鋅Zn(CH3COO)2．2H2O(Aldrich,99.9%)，加入一乙醇(Ethanol,99.5%)溶劑中，產生莫爾濃度為0.05M的一氧化鋅有機金屬鹽水溶液，再利用電磁加熱攪拌器，將調配好的該氧化鋅有機金屬鹽水溶液加熱至55℃並攪拌1小時，使該氧化鋅有機金屬鹽水溶液之一溶質均勻溶解混和於溶劑中，得到高透明之該氧化鋅有機金屬鹽水溶液。 STEP6. Prepare an aqueous solution of zinc monoxide organic metal salt, and a solute zinc acetate Zn (CH 3 COO) 2 . 2H 2 O (Aldrich, 99.9%), add monoethanol (Ethanol, 99.5%) solvent to produce zinc oxide organic metal salt aqueous solution with a molar concentration of 0.05M, and then use electromagnetic heating stirrer The zinc oxide organic metal salt aqueous solution is heated to 55°C and stirred for 1 hour, so that one of the solutes of the zinc oxide organic metal salt aqueous solution is uniformly dissolved and mixed in the solvent to obtain the highly transparent zinc oxide organic metal salt aqueous solution.
STEP7. 於該介電層30上塗佈該氧化鋅薄膜形成一通道層50，本實施例之該通道層50利用前一步驟製成的該氧化鋅有機金屬鹽水溶液使用一旋轉塗佈方式在室溫下塗佈2-6次形成該氧化鋅薄膜。
STEP7. The zinc oxide film is coated on the
STEP8. 於該通道層50之表面形成兩個間隔的該電極60，於該基板20底面形成一閘極層10。利用一金屬光罩及以一熱蒸鍍法，於真空度5×10-6torr下鍍出厚度300nm該閘極層10及兩個該電極60。
STEP8. Two spaced
本實施例之該光感測器，如圖4於可見光波段下，利用該通道層50氧化鋅的高透光性，可見光可直接穿透該通道層50至下一層該奈米金粒子層40中，進而產生表面電漿共振，激發該通道層50產生一電子51-電洞52或產生額外光電子進入該通道層50中，改變了原始電訊號，進而導致薄膜電晶體之電訊號位移或更高之飽和電流。
The light sensor of this embodiment, as shown in FIG. 4 under the visible light band, utilizes the high transparency of the zinc oxide of the
以上所述僅為本發明的較佳實施例而已，並非用以限定本發明主張的權利範圍，凡其它未脫離本發明所揭示的精神所完成的等效改變或修飾，均應包括在本發明的申請專利範圍內。 The above are only preferred embodiments of the present invention and are not intended to limit the scope of the claimed rights of the present invention. Any other equivalent changes or modifications made without departing from the spirit of the present invention should be included in the present invention Within the scope of patent application.
10‧‧‧閘級層 10‧‧‧Gate level
20‧‧‧基板 20‧‧‧ substrate
30‧‧‧介電層 30‧‧‧dielectric layer
40‧‧‧奈米金粒子層 40‧‧‧Nano gold particle layer
40A‧‧‧奈米金粒子 40A‧‧‧Nano gold particles
50‧‧‧通道層 50‧‧‧channel layer
60‧‧‧電極 60‧‧‧electrode
Claims (8)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107143668A TWI685127B (en) | 2018-12-05 | 2018-12-05 | A photo detector and producing method thereof |
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| TW107143668A TWI685127B (en) | 2018-12-05 | 2018-12-05 | A photo detector and producing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080221806A1 (en) * | 2005-05-19 | 2008-09-11 | Nanomix, Inc. | Sensor having a thin-film inhibition layer, nitric oxide converter and monitor |
| US9331293B2 (en) * | 2013-03-14 | 2016-05-03 | Nutech Ventures | Floating-gate transistor photodetector with light absorbing layer |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080221806A1 (en) * | 2005-05-19 | 2008-09-11 | Nanomix, Inc. | Sensor having a thin-film inhibition layer, nitric oxide converter and monitor |
| US9331293B2 (en) * | 2013-03-14 | 2016-05-03 | Nutech Ventures | Floating-gate transistor photodetector with light absorbing layer |
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