TWI684519B - Composite conductive material - Google Patents
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- TWI684519B TWI684519B TW107129017A TW107129017A TWI684519B TW I684519 B TWI684519 B TW I684519B TW 107129017 A TW107129017 A TW 107129017A TW 107129017 A TW107129017 A TW 107129017A TW I684519 B TWI684519 B TW I684519B
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- 239000004020 conductor Substances 0.000 title claims abstract description 123
- 239000002131 composite material Substances 0.000 title claims abstract description 57
- 239000002070 nanowire Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 231
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 26
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
Abstract
Description
本發明係關於一種導電材料，特別是關於一種結合惰性透明無機導電材料與奈米金屬線的複合導電材料。 The invention relates to a conductive material, in particular to a composite conductive material combining an inert transparent inorganic conductive material and a nano metal wire.
近年來，隨著資訊產業、能源產業、通訊產業等不同產業的蓬勃發展，能夠應用於平板電視、觸控螢幕、智能玻璃、發光二極體與光伏電池等常見電子裝置的元件備受重視。其中，由於透明導電薄膜屬於製造上述電子裝置的必要元件，因此人們對於透明導電薄膜的需求量相應急劇增大。 In recent years, with the vigorous development of different industries such as the information industry, energy industry, and communication industry, components that can be applied to common electronic devices such as flat-screen TVs, touch screens, smart glasses, light-emitting diodes, and photovoltaic cells have received much attention. Among them, since the transparent conductive film is a necessary element for manufacturing the above-mentioned electronic device, the demand for the transparent conductive film has correspondingly increased dramatically.
在各種材料製備而成的透明導電薄膜中，氧化銦錫(ITO，indium tin oxide)薄膜的應用最廣。但是在使用過程中，無論是ITO薄膜，或者是與其具有相似性質的其他透明導電薄膜，例如：氧化銦鋅(IZO，indium zinc oxide)薄膜、氧化鋅(ZnO，zinc oxide)薄膜或氧化銦錫鋅(ITZO，indium tin zinc oxide)薄膜，皆存在電阻偏高的問題，同時，在加工製程期間，因為透明導電薄膜為脆性物質，進而導致其無法滿足較大曲度及可撓性(flexibility)應用的需求。 Among the transparent conductive films made of various materials, indium tin oxide (ITO) films are the most widely used. However, during use, whether it is an ITO film or other transparent conductive film with similar properties, such as: indium zinc oxide (IZO, indium zinc oxide) film, zinc oxide (ZnO, zinc oxide) film or indium tin oxide film Zinc (ITZO, indium tin zinc oxide) films have the problem of high resistance. At the same time, during the processing process, because the transparent conductive film is a brittle substance, which makes it unable to meet the application of greater curvature and flexibility (flexibility) Demand.
另一方面，奈米金屬線是一種奈米尺度的金屬線，被定義為在一個特定方向(例如：橫向)上的長度限制在100奈米以下的一維結構。相較於傳統物理學，奈米尺度內能夠產生特殊的量子力學效應，使奈米金屬線除了具有優 良的導電性之外，還具有較大的長徑比、優異的透光性、耐撓曲性等性質。因此奈米金屬線常被用於製造超小電路，同時被視為最有可能替代傳統透明導電薄膜的材料之一。 On the other hand, a nanowire is a kind of nanometer-sized metal wire, which is defined as a one-dimensional structure whose length in a specific direction (for example, lateral direction) is limited to less than 100 nanometers. Compared with traditional physics, the nanoscale can produce special quantum mechanical effects, which makes nanowires have excellent In addition to good conductivity, it also has properties such as a large aspect ratio, excellent light transmission, and flex resistance. Therefore, nanowires are often used to make ultra-small circuits, and are considered as one of the most likely materials to replace traditional transparent conductive films.
然而，奈米金屬線存在所需搭接面積較大、所需線寬較大、可靠性較低等問題。當奈米金屬線與其他導電材料進行搭接時，奈米金屬線需要較大的搭接面積以降低搭接阻抗，且亦需要較大的線寬，以使阻抗穩定與均一，進而提升可靠度。但是，增加搭接面積與線寬會造成製得之電子裝置的顯示區域邊框過寬、成本提升、電子裝置體積難以最小化之問題。 However, the nano metal wire has the problems of large required overlapping area, large required wire width, and low reliability. When the nano metal wire is lapped with other conductive materials, the nano metal wire needs a larger lap area to reduce the lap impedance, and also requires a larger line width to make the impedance stable and uniform, thereby improving reliability degree. However, increasing the overlapping area and the line width will cause the problem that the frame of the display area of the manufactured electronic device is too wide, the cost is increased, and the volume of the electronic device is difficult to minimize.
因此，仍須提供一種能夠同時解決透明導電薄膜與奈米金屬線的限制的導電材料。 Therefore, it is still necessary to provide a conductive material that can solve the limitation of the transparent conductive film and the nano metal wire at the same time.
鑒於上述問題，本發明之目的為提供複合導電材料，藉由同時使用透明導電薄膜與奈米金屬線，並針對其配置及圖案化之圖案進行調整，解決透明導電薄膜與奈米金屬線分別單獨使用時所造成的限制，來達到降低透明導電薄膜的電阻、縮小透明導電薄膜與奈米金屬線的搭接面積、提高產品可靠度、以及滿足曲面及可撓的需求之目的。 In view of the above problems, the object of the present invention is to provide a composite conductive material, by using a transparent conductive film and a nano metal wire at the same time, and adjusting the configuration and patterning of the pattern, to solve the problem of separate transparent conductive film and nano metal wire The restrictions caused by use are to reduce the resistance of the transparent conductive film, reduce the overlapping area of the transparent conductive film and the nano metal wire, improve product reliability, and meet the needs of curved surfaces and flexible.
本發明之目的係為提供一種複合導電材料，其包含：基板以及設置於基板上的導電單元。導電單元包含：至少一無機導電材料層以及包含複數條奈米金屬線的至少一奈米線層。複數條奈米金屬線中的每一條係電性連接。其中，無機導電材料層與奈米線層係為層疊設置，且無機導電材料層重疊於奈 米線層的至少一部份，或者無機導電材料層包覆且接觸奈米線層的至少一部份。其中，無機導電材料層與奈米線層電性連接。 An object of the present invention is to provide a composite conductive material, which includes a substrate and a conductive unit provided on the substrate. The conductive unit includes: at least one inorganic conductive material layer and at least one nanowire layer including a plurality of nanowires. Each of the plurality of nano metal wires is electrically connected. The inorganic conductive material layer and the nanowire layer are stacked, and the inorganic conductive material layer overlaps the nano At least a portion of the rice noodle layer, or an inorganic conductive material layer covering and contacting at least a portion of the nano wire layer. The inorganic conductive material layer is electrically connected to the nanowire layer.
較佳地，無機導電材料層與奈米線層完全重疊，或者無機導電材料層完全包覆且接觸奈米線層。 Preferably, the inorganic conductive material layer completely overlaps the nanowire layer, or the inorganic conductive material layer completely covers and contacts the nanowire layer.
較佳地，無機導電材料層或奈米線層被圖案化。 Preferably, the inorganic conductive material layer or the nanowire layer is patterned.
較佳地，無機導電材料層係為以第一圖案圖案化之圖案化無機層；奈米線層係為以第二圖案圖案化之圖案化金屬層；且第一圖案與第二圖案為相同或不同。 Preferably, the inorganic conductive material layer is a patterned inorganic layer patterned with a first pattern; the nanowire layer is a patterned metal layer patterned with a second pattern; and the first pattern and the second pattern are the same Or different.
較佳地，第一圖案包含複數個第一圖案單元，複數個第一圖案單元係重複排列或者不規則排列；第二圖案包含複數個第二圖案單元；複數個第二圖案單元係重複排列或者不規則排列。 Preferably, the first pattern includes a plurality of first pattern units, the plurality of first pattern units are repeatedly arranged or irregularly arranged; the second pattern includes a plurality of second pattern units; the plurality of second pattern units are repeatedly arranged or Irregular arrangement.
較佳地，第一圖案單元大於第二圖案單元。 Preferably, the first pattern unit is larger than the second pattern unit.
較佳地，第一圖案包含複數個第一圖案單元，複數個第一圖案單元的面積為隨機分配。 Preferably, the first pattern includes a plurality of first pattern units, and the areas of the plurality of first pattern units are randomly allocated.
較佳地，無機導電材料層包含氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋅(ZnO)或氧化銦錫鋅(ITZO)。 Preferably, the inorganic conductive material layer includes indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO).
較佳地，複數條奈米金屬線包含奈米銀線、奈米銅線、奈米金線、奈米鎳線或奈米鉑線。 Preferably, the plurality of nano metal wires includes nano silver wires, nano copper wires, nano gold wires, nano nickel wires, or nano platinum wires.
較佳地，導電單元包含與複數條奈米金屬線接觸的保護層。 Preferably, the conductive unit includes a protective layer in contact with a plurality of nano metal wires.
本發明之複合導電材料具有下述優點： The composite conductive material of the present invention has the following advantages:
(1)低阻值：本發明之複合導電材料具有透明導電薄膜與奈米金屬線之複合結構。其中，透明導電薄膜的各個圖案單元可與奈米金屬線以並聯形式設置，因此能夠大幅度地降低整體電阻。 (1) Low resistance: The composite conductive material of the present invention has a composite structure of a transparent conductive film and a nano metal wire. Among them, each pattern unit of the transparent conductive film can be arranged in parallel with the nano metal wire, so the overall resistance can be greatly reduced.
(2)細線寬與提升阻值均一性：奈米金屬線的直徑為奈米等級，因此意味著奈米金屬線的接觸面積亦為奈米等級，因此需要較多的奈米金屬線或者較寬的奈米金屬線的線寬，以提供奈米金屬線彼此接觸搭接，以達阻值均一或者穩定的需求。然而，本發明之複合導電材料中，除了透明導電薄膜本身就可達到細線寬的要求之外，透明導電薄膜能夠提供更多的面積，以與奈米金屬線接觸搭接，讓奈米金屬線及/或整體複合導電材料的阻值更為穩定與均一。 (2) The uniformity of the thin wire width and the lifting resistance: the diameter of the nano metal wire is nano grade, so it means that the contact area of the nano metal wire is also nano grade, so more nano metal wire or more The width of the wide nano-metal wires is to provide contact and overlap of the nano-metal wires to meet the requirement of uniform resistance or stability. However, in the composite conductive material of the present invention, in addition to the transparent conductive film itself can meet the requirements of thin line width, the transparent conductive film can provide more area to contact and overlap with the nano metal wire, so that the nano metal wire And/or the resistance value of the overall composite conductive material is more stable and uniform.
(3)提升可彎曲性與可撓性：因為透明導電薄膜為脆性物質，在彎折時容易脆裂，而造成導電線路短路或是斷路的情況，是故在曲度及可撓性要求較大之應用上產生限制。然而奈米金屬線為可撓性材料，其甚至為能夠在一定程度上承受拉扯的材料。因此，利用奈米金屬線的此種特性，與透明導電薄膜形成具有複合結構之複合導電材料，再搭配複合導電材料圖案化的圖案調整，提升可彎曲性與可撓性，以達到更為廣泛的產品要求。 (3) Improve bendability and flexibility: because the transparent conductive film is a brittle substance, it is easy to crack when bent, resulting in short circuit or open circuit of the conductive line. Therefore, the requirements for curvature and flexibility are more There are restrictions on the application of the big one. However, the nanowire is a flexible material, and it is even a material that can withstand pulling to some extent. Therefore, the use of such characteristics of the nano metal wire and the transparent conductive film to form a composite conductive material with a composite structure, and then with the pattern adjustment of the composite conductive material patterning, to improve the flexibility and flexibility, in order to achieve a wider range Product requirements.
(4)窄邊框：奈米金屬線與其他導電材料搭接時，需有較大之搭接面積以確保奈米金屬線的穩定性。目前市售的觸控面板，係利用銅(Cu)或鋁(A1)作為週邊導線，然而此類材料皆為不透明，因此需要使用不透明的邊框將周邊導線遮住。如果奈米金屬線與週邊導線的搭接面積過大，會造成邊框面積無法縮小。而使用本發明之複合導電材料時，由於複合結構係為奈米金屬線與透明導電薄膜組合而得之結構，因此本發明之複合導電材料為透明材料，可於可視區內搭接，而在不可視區中，不透明導線可僅與透明導電薄膜搭接，亦可同時與透明導電薄膜以及奈米金屬線搭接。 (4) Narrow border: When the nano metal wire is lapped with other conductive materials, a larger lap area is required to ensure the stability of the nano metal wire. Currently available touch panels use copper (Cu) or aluminum (A1) as the peripheral wires. However, these materials are opaque, so an opaque frame is required to cover the peripheral wires. If the overlapping area of the nano metal wire and the surrounding wires is too large, the area of the frame cannot be reduced. When using the composite conductive material of the present invention, since the composite structure is a structure obtained by combining a nano metal wire and a transparent conductive film, the composite conductive material of the present invention is a transparent material, which can be overlapped in the visible area, while In the invisible area, the opaque wire can only be lapped with the transparent conductive film, or it can be lapped with the transparent conductive film and the nano metal wire at the same time.
(5)提高產品可靠度及信賴性：奈米金屬線於存在電壓差的情況下，搭配特定條件容易產生電子遷移(migration)，若讓性質較為活潑的奈米金屬線與性質較不活潑的惰性物質，亦即ITO形成複合導電材料，則可大幅度降低電子遷移的發生機率，並藉此提高後續產品之可靠度及信賴性。 (5) Improve product reliability and reliability: In the case of a voltage difference between the nano metal wire and certain conditions, it is easy to produce electron migration (migration). If the nano metal wire with more active properties and the less active one Inert substances, that is, ITO forming a composite conductive material, can greatly reduce the probability of electron migration, and thereby improve the reliability and reliability of subsequent products.
100‧‧‧基板 100‧‧‧ substrate
110‧‧‧ITO層 110‧‧‧ITO layer
111、112‧‧‧ITO圖案化層 111、112‧‧‧ITO patterned layer
111p、112p‧‧‧圖案 111p, 112p‧‧‧pattern
120‧‧‧奈米銀線層 120‧‧‧Nano silver wire layer
120a‧‧‧有機材料 120a‧‧‧Organic materials
121‧‧‧奈米圖案化層 121‧‧‧Nano patterned layer
130、130a、131、132‧‧‧複合導電材料層 130, 130a, 131, 132‧‧‧‧ composite conductive material layer
第1圖係為本發明之實施例1之結構示意圖。
FIG. 1 is a schematic structural diagram of
第2圖係為本發明之實施例2之結構示意圖。
FIG. 2 is a schematic structural diagram of
第3圖係為本發明之實施例3之結構示意圖。 FIG. 3 is a schematic structural diagram of Embodiment 3 of the present invention.
第4圖係為本發明之實施例4之結構示意圖。 FIG. 4 is a schematic structural diagram of Embodiment 4 of the present invention.
第5圖係為本發明之實施例5之結構示意圖。 FIG. 5 is a schematic structural diagram of Embodiment 5 of the present invention.
第6圖係為本發明之實施例1與實施例5之俯視圖。
FIG. 6 is a plan view of
第7圖係為本發明之實施例5的複合導電材料層之俯視圖。 FIG. 7 is a top view of the composite conductive material layer of Example 5 of the present invention.
第8圖係為本發明之實施例6之結構示意圖。 FIG. 8 is a schematic structural diagram of Embodiment 6 of the present invention.
第9圖係為本發明之實施例6的複合導電材料層之俯視圖。 FIG. 9 is a top view of the composite conductive material layer of Example 6 of the present invention.
為使上述目的、技術特徵及實際實施後之效益更易於使本領域具通常知識者理解，將於下文中以實施例搭配圖式更詳細地說明。而其中所使用之圖式，其主旨僅為示意及輔助說明書之用，未必為本發明實施後之真實比例與精準配置，故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的權利範圍，合先敘明。為使便於理解，下述實施例中之相同元件係以相同之符號標示來說明。 In order to make the above purpose, technical features and benefits after actual implementation easier for those with ordinary knowledge in the art to understand, the following examples and drawings will be used to explain in more detail. The drawings used in it are for illustrative purposes and supplementary instructions only, and may not be the true scale and precise configuration after the implementation of the present invention. Therefore, the relationship between the scale and configuration of the attached drawings should not be interpreted or limited. The scope of rights in the actual implementation of the invention shall be described first. For ease of understanding, the same elements in the following embodiments are described with the same symbols.
在一實施例中，複合導電材料可包含基板以及設置於基板上的導電單元。在一實施例中，基板可為經由所屬技術領域中具有通常知識者為習知的各種製程處理後的半成品或成品，亦即已經存在製作後端產品所需的必要材 料在其之上，也可以為未經任何製程處理的基板。在一實施例中，基板可為玻璃、聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、聚醯亞胺(PI)、環烯烴共聚物(COP、Arton)、聚丙烯(PP)、聚苯乙烯(PS)、丙烯腈-丁二烯-苯乙烯(ABS)等之成品、半成品或加工品，也可為液晶顯示器(LCD)的偏光片(polarizer)之成品或半成品，亦可為LCD、有機發光二極體(OLED)、發光二極體(LED)、微發光二極體(Micro LED)等顯示器之成品或半成品。在一實施例中，可選用不同之種類的基板材料，並搭配所屬技術領域中具有通常知識者為習知的各種製程，以製得觸控螢幕、觸控傳感器、加熱器、光伏電池、智能玻璃等後續產品。 In one embodiment, the composite conductive material may include a substrate and conductive units disposed on the substrate. In one embodiment, the substrate may be a semi-finished product or a finished product processed through various processes known to those skilled in the art, that is, the necessary materials for manufacturing back-end products already exist. It can be a substrate without any process. In an embodiment, the substrate may be glass, polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), polyimide (PI), cyclic olefin Copolymers (COP, Arton), polypropylene (PP), polystyrene (PS), acrylonitrile-butadiene-styrene (ABS), etc., semi-finished products or processed products, can also be liquid crystal displays (LCD) The finished or semi-finished product of the polarizer can also be the finished or semi-finished product of LCD, organic light emitting diode (OLED), light emitting diode (LED), micro light emitting diode (Micro LED) and other displays. In one embodiment, different types of substrate materials can be selected and used in conjunction with various processes known to those of ordinary skill in the art to produce touch screens, touch sensors, heaters, photovoltaic cells, and smart Follow-up products such as glass.
在一實施例中，導電單元可包含無機導電材料層及包含複數條奈米金屬線的奈米線層。在一實施例中，複數條奈米金屬線中的每一條可彼此電性連接，以使奈米線層的整體皆能導電。 In one embodiment, the conductive unit may include an inorganic conductive material layer and a nanowire layer including a plurality of nanowires. In an embodiment, each of the plurality of nano metal wires can be electrically connected to each other, so that the entire nano wire layer can be electrically conductive.
在一實施例中，無機導電材料層與奈米線層可為層疊設置。在一實施例中，無機導電材料層可包覆且接觸奈米線層的至少一部份。在一實施例中，可先於基板上設置無機導電材料層，再設置奈米線層。在一實施例中，可先於基板上設置奈米線層，再設置無機導電材料層。在一實施例中，奈米線層可設置於無機導電材料層內。在一實施例中，設置無機導電材料層之製程為所屬技術領域中具有通常知識者為習知之製程。在一實施例中，設置奈米線層之製程為所屬技術領域中具有通常知識者為習知之製程。在一實施例中，設置無機導電材料層與奈米線層之製程可連續完成，亦可在兩道製程中加入其他的製程，例如：金屬導線製程，或者絕緣層導線製程，而不影響複合導電材料之製程。在一實施例中，可於獲得複 合導電材料後，視後續產品需求，接續進行其他所屬技術領域中具有通常知識者為習知之製程。 In an embodiment, the inorganic conductive material layer and the nanowire layer can be stacked. In one embodiment, the inorganic conductive material layer may cover and contact at least a part of the nanowire layer. In one embodiment, the inorganic conductive material layer may be provided on the substrate before the nanowire layer. In one embodiment, the nanowire layer may be provided on the substrate before the inorganic conductive material layer. In one embodiment, the nanowire layer can be disposed in the inorganic conductive material layer. In one embodiment, the process of providing the inorganic conductive material layer is a process known to those skilled in the art. In one embodiment, the process of setting the nanowire layer is a process known to those with ordinary knowledge in the technical field. In one embodiment, the process of providing the inorganic conductive material layer and the nanowire layer can be completed continuously, or other processes can be added to the two processes, such as: a metal wire process, or an insulating layer wire process, without affecting compounding The process of conducting materials. In one embodiment, multiple After the conductive materials are combined, depending on the requirements of the subsequent products, the manufacturing process of other persons with common knowledge in the related technical field is continued.
在一實施例中，無機導電材料層與奈米線層可彼此電性連接。在一實施例中，當基板彎曲而造成無機導電材料層破裂時，奈米線層內之複數條奈米金屬線可維持碎裂的無機導電材料層與奈米線層之電性連接，亦即奈米金屬線可利用類似編織網絡之方式，維持無機導電材料層與奈米線層之整體的導電性。 In one embodiment, the inorganic conductive material layer and the nanowire layer can be electrically connected to each other. In one embodiment, when the substrate bends to cause the inorganic conductive material layer to rupture, the plurality of nano-metal wires in the nano-wire layer can maintain the electrical connection between the broken inorganic conductive material layer and the nano-wire layer, and That is, the nano metal wire can maintain the overall conductivity of the inorganic conductive material layer and the nano wire layer in a similar way as a woven network.
在一實施例中，可依照後續產品的實際需要，全部區域皆設置有無機導電材料層與奈米線層，並使無機導電材料層與奈米線層完全重疊，或者使無機導電材料層完全包覆且接觸奈米線層，以達控制可視區域面積、維持導電性質等目的。在一實施例中，可依照後續產品的實際需要，部分區域可僅設置無機導電材料層或奈米線層，而另外部分區域則同時設置無機導電材料層與奈米線層，以達控制可視區域面積、降低成本等目的。 In one embodiment, the inorganic conductive material layer and the nanowire layer may be provided in all areas according to the actual needs of the subsequent products, and the inorganic conductive material layer and the nanowire layer may be completely overlapped, or the inorganic conductive material layer may be completely Cladding and contacting the nanowire layer for the purpose of controlling the visible area and maintaining the conductive properties. In one embodiment, according to the actual needs of subsequent products, some regions may only be provided with an inorganic conductive material layer or a nanowire layer, while other regions may be provided with an inorganic conductive material layer and a nanowire layer at the same time to achieve visual control. Area area, cost reduction and other purposes.
在一實施例中，無機導電材料層包含惰性透明的氧化銦錫(indium tin oxide，ITO)、氧化銦鋅(indium zinc oxide，IZO)、氧化鋅(zinc oxide，ZnO)或氧化銦錫鋅(indium tin zinc oxide，ITZO)。在一實施例中，複數條奈米金屬線包含奈米銀線、奈米銅線、奈米金線、奈米鎳線或奈米鉑線。 In one embodiment, the inorganic conductive material layer includes inert transparent indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide ( indium tin zinc oxide, ITZO). In an embodiment, the plurality of nano metal wires includes nano silver wires, nano copper wires, nano gold wires, nano nickel wires, or nano platinum wires.
在一實施例中，導電單元可包含與複數條奈米金屬線接觸的保護層，以保護性質活潑之奈米金屬線。在一實施例中，保護層可為所屬技術領域中具有通常知識者為習知的任何有機材料。在一實施例中，導電單元可包含至少一層的無機導電材料層以及至少一層的奈米線層。在一實 施例中，無機導電材料層以及奈米線層的層數可為相同或不同。在一實施例中，導電單元可包含一層的無機導電材料層以及兩層的奈米線層，並以奈米線層-無機導電材料層-奈米線層之三明治結構層疊設置。在一實施例中，導電單元可包含兩層的無機導電材料層以及一層的奈米線層，並以無機導電材料層-奈米線層-無機導電材料層之三明治結構層疊設置。 In an embodiment, the conductive unit may include a protective layer in contact with the plurality of nano-metal wires to protect the active nano-metal wires. In an embodiment, the protective layer may be any organic material known to those having ordinary knowledge in the technical field. In an embodiment, the conductive unit may include at least one inorganic conductive material layer and at least one nanowire layer. In one In an embodiment, the number of layers of the inorganic conductive material layer and the nanowire layer may be the same or different. In one embodiment, the conductive unit may include one inorganic conductive material layer and two nanowire layers, and are stacked in a sandwich structure of nanowire layer-inorganic conductive material layer-nanowire layer. In an embodiment, the conductive unit may include two inorganic conductive material layers and one nanowire layer, and are stacked in a sandwich structure of inorganic conductive material layer-nanowire layer-inorganic conductive material layer.
在一實施例中，無機導電材料層或者奈米線層被圖案化。在一實施例中，無機導電材料層與奈米線層皆被圖案化。在一實施例中，無機導電材料層與奈米線層可以未結合為複合導電材料之單層狀態，分別進行圖案化製程。在一實施例中，無機導電材料層與奈米線層可先結合為複合導電材料，再同時進行圖案化製程或是分別進行圖案化製程。在一實施例中，圖案化無機導電材料層之製程為所屬技術領域中具有通常知識者為習知之製程。在一實施例中，圖案化奈米線層之製程為所屬技術領域中具有通常知識者為習知之製程。 In one embodiment, the inorganic conductive material layer or the nanowire layer is patterned. In one embodiment, both the inorganic conductive material layer and the nanowire layer are patterned. In one embodiment, the inorganic conductive material layer and the nanowire layer may not be combined into a single layer state of the composite conductive material, and the patterning process is performed separately. In one embodiment, the inorganic conductive material layer and the nanowire layer may be combined into a composite conductive material, and then the patterning process or the patterning process may be performed separately. In one embodiment, the process of patterning the inorganic conductive material layer is a process known to those skilled in the art. In one embodiment, the process of patterning the nanowire layer is a process known to those skilled in the art.
在一實施例中，無機導電材料層可為以第一圖案進行圖案化之圖案化無機層，奈米線層可為以第二圖案圖案化之圖案化金屬層，且第一圖案與第二圖案可為相同或不同，以根據不同需求及目的調整圖案化製程。 In one embodiment, the inorganic conductive material layer may be a patterned inorganic layer patterned with a first pattern, the nanowire layer may be a patterned metal layer patterned with a second pattern, and the first pattern and the second The patterns can be the same or different to adjust the patterning process according to different needs and purposes.
在一實施例中，第一圖案可包含面積較小之複數個第一圖案單元，且複數個第一圖案單元可重複排列或者不規則排列，以及第二圖案可包含面積較小之複數個第二圖案單元，且複數個第二圖案單元可重複排列或者不規則排列。在一實施例中，複數個第一圖案單元可重複排列且複數個第二圖案單元可重複排列。在一實施例中，複數個第一圖案單元可重複排列且複數個第二圖案單元可不規則排列。在一實施例中，複數個第一圖案單元可不規則排列且 複數個第二圖案單元可重複排列。在一實施例中，複數個第一圖案單元可不規則排列且複數個第二圖案單元可不規則排列。 In an embodiment, the first pattern may include a plurality of first pattern units with a small area, and the plurality of first pattern units may be repeatedly arranged or irregularly arranged, and the second pattern may include a plurality of first patterns with a small area Two pattern units, and the plurality of second pattern units may be arranged repeatedly or irregularly. In an embodiment, the plurality of first pattern units can be repeatedly arranged and the plurality of second pattern units can be repeatedly arranged. In an embodiment, the plurality of first pattern units can be repeatedly arranged and the plurality of second pattern units can be arranged irregularly. In an embodiment, the plurality of first pattern units may be irregularly arranged and A plurality of second pattern units can be arranged repeatedly. In one embodiment, the plurality of first pattern units may be arranged irregularly and the plurality of second pattern units may be arranged irregularly.
在一實施例中，在形成無機導電材料層之第一圖案時，可先將第一圖案細分為面積較小的複數個第一圖案單元，後續再藉由設置奈米線層，將原先細分之複數個第一圖案單元，電性連接為原先大小之第一圖案。由於奈米金屬線層與無機導電材料層相連成複合導電材料結構，因此本實施例之導電效果幾乎等同於未將第一圖案細分為第一圖案單元時之導電效果。 In one embodiment, when forming the first pattern of the inorganic conductive material layer, the first pattern may be subdivided into a plurality of first pattern units with a smaller area, and then the original subdivision may be performed by providing a nanowire layer The plurality of first pattern units are electrically connected to the original size first pattern. Since the nano metal wire layer and the inorganic conductive material layer are connected to form a composite conductive material structure, the conductive effect of this embodiment is almost equivalent to the conductive effect when the first pattern is not subdivided into first pattern units.
在一實施例中，先形成奈米金屬線層之第二圖案，再設置無機導電材料層之第一圖案，其中第一圖形可細分為面積較小的複數個第一圖案單元。由於奈米金屬線層與無機導電材料層相連成複合導電材料結構，因此本實施例之導電效果幾乎等同於未將第一圖案細分為第一圖案單元時之導電效果。 In one embodiment, the second pattern of the nano metal wire layer is formed first, and then the first pattern of the inorganic conductive material layer is provided, wherein the first pattern can be subdivided into a plurality of first pattern units with a smaller area. Since the nano metal wire layer and the inorganic conductive material layer are connected to form a composite conductive material structure, the conductive effect of this embodiment is almost equivalent to the conductive effect when the first pattern is not subdivided into first pattern units.
在一實施例中，各第一圖案單元可大於各第二圖案單元。在一實施例中，無機導電材料層的一個第一圖案單元之邊緣距離相鄰的無機導電材料層的另一個第一圖案單元之邊緣距離較小，而奈米金屬線層的一個第二圖案單元之邊緣距離相鄰的另一個第二圖案單元之邊緣距離較大。 In an embodiment, each first pattern unit may be larger than each second pattern unit. In an embodiment, the edge of one first pattern unit of the inorganic conductive material layer is smaller than the edge of another first pattern unit of the adjacent inorganic conductive material layer, and a second pattern of the nanowire layer The distance between the edge of the unit and the edge of another adjacent second pattern unit is larger.
在一實施例中，當無機導電材料層受外力而碎裂時，第一圖案可包含複數個第一圖案單元，各複數個第一圖案單元的面積為隨機分配。由於奈米金屬線層與無機導電材料層相連成複合導電材料結構，因此本實施例之導電效果幾乎等同於第一圖案碎裂為具有不同面積之第一圖案單元時之導電效果。 In one embodiment, when the inorganic conductive material layer is broken by external force, the first pattern may include a plurality of first pattern units, and the area of each of the plurality of first pattern units is randomly allocated. Since the nano metal wire layer and the inorganic conductive material layer are connected to form a composite conductive material structure, the conductive effect of this embodiment is almost equivalent to the conductive effect when the first pattern is broken into first pattern units with different areas.
為了便於說明，於後述實施例中，選用ITO作為透明導電材料層，並選用奈米銀線作為奈米線層。 For ease of description, in the embodiments described below, ITO is used as the transparent conductive material layer, and nano silver wire is used as the nano wire layer.
實施例1 Example 1
參照第1圖，其係為本發明之實施例1之結構示意圖。
Refer to FIG. 1, which is a schematic structural view of
如第1圖(A)所示，於基板100上鍍上ITO層110。如第1圖(B)所示，將ITO層110以圖案111p圖案化為ITO圖案化層111。如第1圖(C)所示，將奈米銀線塗佈於ITO圖案化層111上，形成奈米銀線層120，如第1圖(D-1)所示，將奈米銀線層120圖案化為奈米圖案化層121，ITO圖案化層111與奈米圖案化層121結合形成複合導電材料層130。如第1圖(E-1)所示，形成複合導電材料層130後，可在130複合導電材料層上塗佈一層專門用於保護奈米銀線的有機材料120a，而ITO圖案化層111、奈米圖案化層121及有機材料120a形成之導電層為複合導電材料層130a。
As shown in FIG. 1(A), an
另外，如第1圖(D-2)所示，亦可先於奈米銀線層120上設置保護奈米銀線的有機材料120a。再如第1圖(E-2)所示，將已覆蓋有機材料120a之奈米銀線層120圖案化成奈米圖案化層121，而ITO圖案化層111與奈米圖案化層121及有機材料120a形成之導電層亦為複合導電材料層130a。
In addition, as shown in FIG. 1 (D-2), an
實施例2 Example 2
參照第2圖，其係為本發明之實施例2之結構示意圖。實施例2與實施例1相似之處於此不再加以贅述。
Refer to FIG. 2, which is a schematic structural diagram of
如第2圖(A)所示，於基板100上鍍上ITO層110。如第2圖(B)所示，將奈米銀絲塗佈於ITO層110上，形成奈米銀線層120。如第2圖(C)所示，將ITO層110及奈米銀線層120同時圖案化，獲得ITO圖案化層111及奈米圖案化層121，ITO圖案化層111及奈米圖案化層121結合形成之導電層為複合導電材料層130C。如第2圖(D)所示，可在複合導電材料層130上再塗佈有機材料120a，而ITO圖案化層111與奈米圖案化層121及有機材料120a形成之導電層亦為複合導電材料層130a。
As shown in FIG. 2(A), the
實施例3 Example 3
參照第3圖，其係為本發明之實施例3之結構示意圖。實施例3與實施例1相似之處於此不再加以贅述。
Refer to FIG. 3, which is a schematic structural view of Embodiment 3 of the present invention. Embodiment 3 is similar to
如第3圖(A)所示，於基板100上塗佈奈米銀線層120。如第3圖(B)所示，將奈米銀線層120圖案化為奈米圖案化層121。如第3圖(C)所示，奈米圖案化層121上鍍上ITO層110。如第3圖(D)所示，ITO層110圖案化為ITO圖案化層111，奈米圖案化層121與ITO圖案化層111形成之導電層為複合導電材料層131。
As shown in FIG. 3(A), the nano
實施例4 Example 4
參照第4圖，其係為本發明之實施例4之結構示意圖。實施例4與實施例1相似之處於此不再加以贅述。
Refer to FIG. 4, which is a schematic structural diagram of Embodiment 4 of the present invention. Embodiment 4 is similar to
如第4圖(A)所示，於基板100上塗佈奈米銀線層120。如第4圖(B)所示，接著鍍上ITO層110。如第4圖(C)所示，將奈米銀線層120與ITO層110同時圖案化為奈米圖案化層121與ITO圖案化層111，奈米圖案化層121與ITO圖案化層111形成之導電層亦為複合導電材料層131。
As shown in FIG. 4(A), the nano
實施例5 Example 5
參照第5圖，其係為本發明之實施例5之結構示意圖。 Refer to FIG. 5, which is a schematic structural view of Embodiment 5 of the present invention.
如第5圖(A)所示，於基板100上塗佈ITO層110。如第5圖(B)所示，將ITO層110以圖案112p圖案化為ITO圖案化層112。如第5圖(C)所示，接著塗佈奈米銀線層120。如第5圖(D)所示，將奈米銀線層120圖案化為奈米圖案化層121，ITO圖案化層112與奈米圖案化層121形成之導電層為複合導電材料層132。
As shown in FIG. 5(A), the
參照第6圖，其係為本發明之實施例1與實施例5之俯視圖。
Refer to FIG. 6, which is a plan view of
如第6圖所示，圖案112p與圖案111p不同之處在於，圖案112p是將圖案111p切割成更細的圖案。
As shown in FIG. 6, the
參照第7圖，其係為本發明之實施例5的複合導電材料層之俯視圖。如第7圖所示，由於奈米圖案化層121與ITO圖案化層112結合為複合導電材料層132，奈米圖案化層121內包含的奈米銀線可以網狀編織形狀使ITO圖案化層112的圖案112p相互電性連接，以維持ITO圖案化層112的導電性。因此，複合導電材料層132之導電效果幾乎等同於由ITO圖案化層111與奈米圖案化層121結合所形成之複合導電材料層130。
Referring to FIG. 7, this is a top view of the composite conductive material layer of Example 5 of the present invention. As shown in FIG. 7, since the nano-patterned
實施例6 Example 6
參照第8圖，其係為本發明之實施例6之結構示意圖。 Refer to FIG. 8, which is a schematic structural view of Embodiment 6 of the present invention.
如第8圖(A)所示，於基板100上塗佈奈米銀線層120。如第8圖(B)所示，奈米銀線層120圖案化為奈米圖案化層121。如第8圖(C)所示，接著鍍上ITO層110。如第8圖(D)所示，將ITO層以圖案112p圖案化為ITO圖案化層112，奈米圖案化層121與ITO圖案化層112形成之導電層為複合導電材料層133。
As shown in FIG. 8(A), the nano
參照第9圖，其係為本發明之實施例6的複合導電材料層之俯視圖。如第9圖(A)所示，其係為實施例6之奈米圖案化層121的俯視圖。如第9圖(B)所示，奈米圖案化層121與以ITO圖案化層112結合為複合導電材料層133，由於奈米圖案化層121內包含的奈米銀線可以網狀編織形狀使ITO圖案化層112的圖案112p相互電性連接，以維持ITO圖案化層112的導電性。因此，複合導電材料層133之導電效果幾乎等同於由ITO圖案化層111與奈米圖案化層121結合所形成之複合導電材料層130。
Refer to FIG. 9, which is a plan view of a composite conductive material layer according to Embodiment 6 of the present invention. As shown in FIG. 9(A), it is a top view of the nano-patterned
雖然本發明已以上述實施例及實例具體描述本發明之複合導電材料，然而本發明所屬技術領域中具有通常知識者應理解的是，可在不違背本發明之技術原理及精神下，對實施例作修改與變化。因此本發明之權利保護範圍應如申請專利範圍所述。 Although the present invention has described the composite conductive material of the present invention in detail with the above embodiments and examples, those of ordinary skill in the technical field to which the present invention belongs should understand that it can be implemented without departing from the technical principles and spirit of the present invention Examples of modifications and changes. Therefore, the protection scope of the present invention should be as described in the patent application scope.
100‧‧‧基板 100‧‧‧ substrate
110‧‧‧ITO層 110‧‧‧ITO layer
111‧‧‧ITO圖案化層 111‧‧‧ITO patterned layer
120‧‧‧奈米銀線層 120‧‧‧Nano silver wire layer
120a‧‧‧有機材料 120a‧‧‧Organic materials
121‧‧‧奈米圖案化層 121‧‧‧Nano patterned layer
130、130a‧‧‧複合導電材料層 130, 130a‧‧‧‧composite conductive material layer
Claims (9)
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| TW107129017A TWI684519B (en) | 2018-08-20 | 2018-08-20 | Composite conductive material |
| CN201811011223.2A CN110853800A (en) | 2018-08-20 | 2018-08-31 | Composite conductive material |
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| TW200924203A (en) * | 2007-04-20 | 2009-06-01 | Cambrios Technologies Corp | Composite transparent conductors and methods of forming the same |
| WO2014073597A1 (en) * | 2012-11-08 | 2014-05-15 | アルプス電気株式会社 | Conductor and method for producing same |
| TW201606005A (en) * | 2014-06-27 | 2016-02-16 | 漢高股份有限及兩合公司 | Conductive transparent coating for rigid and flexible substrates |
| CN106229037A (en) * | 2016-08-10 | 2016-12-14 | 深圳市国华光电科技有限公司 | A kind of flexible composite transparent conductive film and preparation method thereof |
| CN108335781A (en) * | 2018-02-11 | 2018-07-27 | 无锡博硕珈睿科技有限公司 | Composite conductive thin film, preparation method, its application, product with heating film |
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| KR101514743B1 (en) * | 2013-10-01 | 2015-04-24 | 재단법인대구경북과학기술원 | The method for manufacturing patterned metal nanowire transparent electrode and the patterned metal nanowire transparent electrode thereby |
| CN106125393A (en) * | 2016-09-06 | 2016-11-16 | 京东方科技集团股份有限公司 | A kind of color membrane substrates and manufacture method, display device |
| CN108336070A (en) * | 2018-02-11 | 2018-07-27 | 无锡博硕珈睿科技有限公司 | The manufacturing method of capacitor device structure, capacitor and capacitor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200924203A (en) * | 2007-04-20 | 2009-06-01 | Cambrios Technologies Corp | Composite transparent conductors and methods of forming the same |
| WO2014073597A1 (en) * | 2012-11-08 | 2014-05-15 | アルプス電気株式会社 | Conductor and method for producing same |
| TW201606005A (en) * | 2014-06-27 | 2016-02-16 | 漢高股份有限及兩合公司 | Conductive transparent coating for rigid and flexible substrates |
| CN106229037A (en) * | 2016-08-10 | 2016-12-14 | 深圳市国华光电科技有限公司 | A kind of flexible composite transparent conductive film and preparation method thereof |
| CN108335781A (en) * | 2018-02-11 | 2018-07-27 | 无锡博硕珈睿科技有限公司 | Composite conductive thin film, preparation method, its application, product with heating film |
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