TWI683428B - 放射線檢測元件、及其製造方法 - Google Patents
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Abstract
本發明提供一種放射線檢測元件,其於由含有碲化鎘或碲化鋅鎘之化合物半導體結晶所構成之基板之表面具備多個電極部與電極間之絕緣部,於上述多個電極部與基板之間存在含有碲之氧化物之中間層,將距上述電極間之絕緣部之端部500 nm之內側之碲氧化物層之厚度設為100 nm以下,而即便於如製成電極之密接性較高且為了獲得高精細之放射線繪製圖像而電極間之間隔較窄之放射線檢測元件的情形時,亦不會產生因多個電極間之絕緣不充分而引起之性能不良。
Description
本發明係關於一種使用含有碲化鎘(CdTe)或碲化鋅鎘(CdZnTe)之化合物半導體結晶之放射線檢測元件。
作為II族(2B族)元素之鎘(Cd)與作為VI族(6B族)元素之碲(Te)之II-VI族化合物即碲化鎘(CdTe)之結晶材料係具有相對較大之帶隙(〜1.44 eV)的結晶性化合物半導體材料。又,藉由用作為同族元素之Zn置換CdTe之Cd之一部分,而亦包括進一步增大了帶隙之碲化鋅鎘(CdZnTe)在內之CdTe系化合物半導體結晶材料可較佳地用於太陽電池、電光學調變器、紅外窗口等光學元件;暗視野相機、紅外線望遠鏡等紅外線檢測器;X射線照片、X射線電腦斷層攝影術(CT)、環境放射線測量器等放射線檢測器等廣泛之用途。
於上述中之放射線檢測器用途中,對電阻率較高之絕緣性之CdTe系結晶施加高偏壓電壓,藉由放射線入射至結晶材料時所產生之(內部)光電效應將放射線之入射轉化成電流之訊號,藉此可電性地檢測出放射線。即,於放射線檢測器中成為感知放射線之主要部分之放射線檢測元件係至少由CdTe系結晶材料及用以對其施加高偏壓電壓之電極所構成。
若將放射線檢測元件以於CdTe系結晶之表面上改變位置地配置有多個電極者之形式構成,則能夠視電極之位置而檢測放射線。若利用該情況並將多個電極配置成矩陣狀,則可獲得與各電極感知放射線之像素對應之放射線圖像。X射線照片或X射線CT係應用上述原理而獲得作為放射線之一種之X射線之繪製圖像。關於此種放射線檢測元件,如專利文獻1〜3所揭示之技術等為公知。 [發明之揭示]
於CdTe系結晶之上改變位置地配置有多個電極之放射線檢測元件係藉由如下方式製作:於由含有CdTe系化合物之半導體結晶所構成之基板之表面,將多個電極以特定之間隔隔開並配置形成。關於該情況,於專利文獻1中,藉由抗蝕劑膜等來遮蔽基板表面上之與多個電極間對應之部分,於該狀態下將基板浸漬於鍍敷液中,而於基板表面之未被遮蔽之部分藉由鍍敷形成導電膜,從成形成成為電極之薄膜。又,關於電極膜之形成手段,亦存在如專利文獻4般不依賴鍍敷法而使用蒸鍍法等之習知技術。於形成電極膜之後,將抗蝕劑膜等遮蔽材去除。
於專利文獻1中,於藉由上述方法形成電極時,使用特定之鍍敷液並於特定之條件下進行鍍敷處理,藉此於所形成之電極與基板面之間形成含有電阻率為10
7Ω・cm以下之Te氧化物之中間層。藉由該中間層之存在,可大幅地提高由含有CdTe系化合物之結晶材料構成之基板之表面與所形成之薄膜狀電極材料之間的密接性。
上述專利文獻1之技術係於獲得基板與電極層之密接性較高且高耐久性、高壽命之放射線檢測元件之方面上非常有用之技術。作為近年來之技術傾向,對於放射線檢測元件之繪製圖像之高精細化之要求提高,伴隨此,各個電極之面積以及電極間之間隔亦不斷縮小化。為了將來自各電極之電訊號確實地分離而獲得高精細之繪製圖像,重要的是即便電極間之間隔縮小變窄,電極間亦確實地被絕緣。為此,由電極間之材料、即含有CdTe系化合物之結晶材料所構成之基板本身必須具有足夠高之電阻率。
然而,僅此並不充分,尤其是於製作電極間之間隔較窄之放射線檢測元件之情形等時,確認到會產生將電極間之絕緣不充分視作原因之元件性能之不良(電極間之漏電流等)。產生此種不良之元件其放射線之檢測訊號無法對於根據各電極之位置來實現適當之分離,因此亦會產生如下事態:空間解析度降低而產生繪製圖像之不清晰化,或者視情形而無法發揮作為放射線檢測元件之功能。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2013-157494號公報 [專利文獻2]日本特表2013-503481號公報 [專利文獻3]日本特開2003-142673號公報 [專利文獻4]日本特開平08-125203號公報
[發明所欲解決之課題]
本發明之技術係欲解決上述技術課題者,其目的在於提供一種即便於如製成電極與基板之密接性較高且為了獲得高精細之放射線繪製圖像而電極間之間隔較窄之放射線檢測元件的情形時,亦不會產生因多個電極間之絕緣不充分而引起之性能不良之放射線檢測元件。又,作為另一態樣之技術,本發明之目的在於提供一種用以製造此種放射線檢測元件之方法。 [解決課題之技術手段]
為了解決上述技術課題,本發明人等進行了潛心研究,結果獲得如下見解,從而完成本發明:如上述之元件之電極間之絕緣不良係因如下情況產生,即於原本具有高電阻率之電極間之絕緣部之表面附近之一部分形成導電性之氧化物,以該氧化物作為洩漏通道之電流流過;並且,藉由將電極間之絕緣部之端部中之導電性之氧化物的厚度抑制為特定範圍以下,可阻斷電流之洩漏通道而防止元件不良之產生。
基於上述見解,本發明提供以下之發明。 1)一種放射線檢測元件,其於由含有碲化鎘或碲化鋅鎘之化合物半導體結晶所構成之基板之表面具備多個電極部及電極間之絕緣部,其特徵在於:於上述多個電極部與基板之間存在含有碲之氧化物之中間層,於距上述電極間之絕緣部之端部500 nm之內側,碲氧化物層之厚度為100 nm以下; 2)如上述1)所述之放射線檢測元件,其中,上述電極間之絕緣部之寬度為100 μm以下; 3)如上述1)或2)所述之放射線檢測元件,其中,上述電極間之絕緣部係含有碲化鎘或碲化鋅鎘之化合物半導體結晶; 4)如上述1)至3)中任一項所述之放射線檢測元件,其中,上述電極部係由包含鉑、金、或含有鉑與金之至少一者之合金之薄膜所構成; 5)如上述1)至4)中任一項所述之放射線檢測元件,其中,在與上述基板之表面垂直之剖面,上述電極部成為凹狀之形狀、上述電極間之絕緣部成為凸狀之形狀; 6)如上述1)至5)中任一項所述之放射線檢測元件,其中,上述化合物半導體結晶為II族元素中之鋅之濃度為2 at%以上且10 at%以下之碲化鋅鎘結晶; 7)如上述1)至6)中任一項所述之放射線檢測元件,其中,由上述化合物半導體結晶所構成之基板之表面係{111}、{110}、或{100}中之任一方位面; 8)一種放射線檢測元件之製造方法,其係上述1)至7)中任一項所述之放射線檢測元件之製造方法,且包括:於由含有碲化鎘或碲化鋅鎘之化合物半導體結晶所構成之基板之表面,在與電極間之絕緣部對應之部分形成抗蝕劑膜;藉由將形成有上述抗蝕劑膜之基板浸漬於鍍敷液中,而在與電極部對應之部分形成電極;及將上述抗蝕劑膜去除; 9)如上述8)所述之放射線檢測元件之製造方法,其中,藉由浸漬於上述鍍敷液中而形成上述電極,並且於上述電極部與基板之間形成含有碲之氧化物之中間層; 10)如上述8)或9)所述之放射線檢測元件之製造方法,其中,上述鍍敷液含有10 ml/L〜30 ml/L之35%濃度之鹽酸; 11)如上述8)至10)中任一項所述之放射線檢測元件之製造方法,其中,藉由上述鍍敷液進行無電解鍍敷處理之時間為50秒以上且70秒以下。 [發明之效果]
根據本發明之技術,關於使用CdTe或CdZnTe等CdTe系化合物半導體結晶之放射線檢測器,即便於如製成如電極與基板之密接性較高且電極間之間隔較窄之放射線檢測元件之情形時,亦確實地防止產生由因電極間之絕緣不良而產生之漏電流所導致之元件的性能不良,而可獲得高精細且高性能之放射線檢測元件。又,可降低元件之不良品率而提高元件製造之良率。
基於本發明之技術之放射線檢測元件具有如下構成:於由含有CdTe或CdZnTe之化合物半導體結晶所構成之基板之表面具備多個、即至少2個以上之電極部,且於電極與電極之間具備至少1個以上之絕緣部。成為基板之材料係含有用Zn置換CdTe或CdTe之Cd之一部分所得之CdZnTe的結晶性材料,較佳為單晶材料。成為基板之含有CdTe或CdZnTe之結晶性材料亦可視需要進而含有銦(In)或氯(Cl)等摻雜劑元素。
於圖1中表示本發明中之放射線檢測元件100整體之外觀之一例。於該圖所示之例中,基板之表面所具備之多個電極101係分別遍及縱向及與其正交之橫向而配置成矩陣狀,但作為本發明對象之放射線檢測元件並不限定於此種具體態樣。如上所述,只要為於基板之表面設置有至少2個以上之電極,且存在於其等之間不存在電極之區域之構成者,則亦包含於作為本發明對象之技術範疇內。
圖2係概略性地表示圖1中之電極部與絕緣部之附近之剖面放大圖者。於基板200之表面上所相鄰之2個電極之間成為電阻率較高之絕緣部201。藉由該絕緣部將各個電極隔開,而劃定出每個電極之空間性之放射線檢測區域。因此,電極間之絕緣部係電阻率必須充分地高至於相鄰之電極彼此不會產生電流通路之程度,例如可設為10
7Ω・cm以上。再者,圖2係電極部之表面形成於較電極間之絕緣部之表面更低之位置,但並不限定於此,亦可為兩者處於同一平面、或電極之表面形成於較電極部間之絕緣部之表面更高之位置。
於電極202與基板200之表面之間形成有包含Te之氧化物之中間層203。構成該氧化物層之物質為Te之氧化物,但係氧(O)與Te之原子數比O/Te大致處於0.6〜1之範圍之導電性氧化物。因此,即便隔著該氧化物層,半導體中之電荷亦能夠到達電極。包含該Te之氧化物之中間層係介存於由含有CdTe或CdZnTe之化合物半導體結晶所構成之基板之表面與電極物質之間,藉此發揮改善電極之密接性之作用。中間層之厚度於發揮改善電極之密接性之作用之範圍內無特別限制。
並且,於電極間之絕緣部之與電極部相鄰之端部之表面,亦以上述電極部之中間層延伸之形式存在Te氧化物層204。於本發明之技術中,關於該部分,其特徵在於:距絕緣部之端部500 nm之內側之Te氧化物層之厚度為100 nm以下。若該部分之Te氧化物層之厚度超過100 nm,則因該氧化物層而於電極間之絕緣部形成電流之洩漏通道之傾向顯著增高,而容易於電極間之絕緣部產生絕緣不良。該部分之Te氧化物層之厚度可設為70 nm以下,亦可設為50 nm以下。
本發明之技術係有效地應用於相鄰之電極間之絕緣部之寬度為100 μm以下的放射線檢測元件。隨著相鄰之電極間之絕緣部之寬度變窄,而容易於絕緣部形成電流之洩漏通道,但藉由應用本發明之技術,可有效地消除此種弊端。電極間之絕緣部之寬度係定義為相鄰之電極間所存在之絕緣部之一電極側之端部至另一電極側之端部的最短直線距離。電極間之絕緣部之寬度可設為70 μm以下,亦可設為50 μm以下。
相鄰之電極間所存在之絕緣部可由含有CdTe或CdZnTe之化合物半導體結晶所構成。尤佳為如下構造:構成基板之含有CdTe或CdZnTe之絕緣性(10
7Ω・cm以上)之化合物半導體結晶材料成為如一部分於基板表面露出以於相鄰之電極之間將兩電極之間隔開之形態而構成絕緣部,但並不限定於此,亦可設為如下構造:設置電極間之絕緣部作為由與基板不同之絕緣性材料所構成之構成。
關於電極部之構造或形狀,並無特別限制,可視所需設計來進行構成,就元件形成製程方面之觀點、或若構成元件之小型化、操作之簡便性,則電極部可以薄膜之形態設置於基板上。又,若考慮到與形成於基板表面之Te氧化物層之密接性,則構成電極部之材料可設為金屬材料,其中可列舉鉑(Pt)、金(Au)、或含有Pt與Au之至少一者之合金材料作為此種金屬材料之選擇項。
如上所述,形成如下構造:使電極間所存在之絕緣部成為如一部分於基板表面露出以於相鄰之電極之間將兩電極之間隔開之形態而構成。此外,於由形成電極部之含有CdTe或CdZnTe之化合物半導體結晶所構成之基板之表面包含於基板之表面加工時所產生之結晶應變層或變質層等的情形時,可藉由將其去除而提高放射線檢測性能。亦可僅對於形成電極部之部分之表面,將表面之應變層或變質層去除。於該情形時,關於電極部,使之於相鄰之絕緣部之間存在於較絕緣部之表面更低之位置,並以如電極部成為凹狀、絕緣部成為凸狀之形狀之構造進行構成。再者,於電極部為凹狀,絕緣部為凸狀且該等兩者之交界傾斜狀地連續之形狀之情形時,所謂「絕緣部之端部」,於圖4、5中,可設為關於基板之剖面,與絕緣部之表面相接且與表面平行之外推線因電極部之凹狀部而自外推線開始向下方下降之部分。
構成基板之化合物材料可設為II族元素中之鋅濃度為2 at%以上且10 at%以下之CdZnTe結晶。藉由設為此種範圍之Zn濃度,而於將CdTe系半導體結晶材料用作放射線檢測器時可控制為較佳之帶隙,並且可使絕緣性良好而形成漏電流較少之元件。CdZnTe結晶之II族元素中之鋅之濃度可設為3 at%以上或5 at%以上,亦可設為9 at%以下或7 at%以下。
由化合物半導體結晶所構成之基板之表面之面方位可視結晶特性或所要求之放射線檢測性能而設為任意方位,可設為{111}、{110}、或{100}之任一方位面。
關於上述放射線檢測元件,只要為包括可獲得上述特徵之手段者,則可為不論內容而藉由任意之任何製造方法製造所得者。以下,列舉可有效地獲得上述放射線檢測元件之構造、構成性特徵之製造方法之一例,但並不限定於此。
圖3係表示藉由本發明之技術製造放射線檢測元件之方法之一例之步驟之概略者。於該例之方法中,首先,準備由含有CdTe或CdZnTe之化合物半導體結晶構成之基板301(圖3(a))。對於基板,亦可視需要進行洗淨處理、作為預處理之整個表面之蝕刻處理等。繼而,藉由塗佈法等而於基板之整個表面形成抗蝕劑膜302,該抗蝕劑膜具有於後續之蝕刻步驟中保護基板表面免受蝕刻液影響之作用(圖3(b))。
繼而,關於形成於基板之整個表面之抗蝕劑膜,僅殘留與電極間之絕緣部對應之部分(圖案)而將與電極部對應之部分去除。此時,若將抗蝕劑膜設為感光材料,將藉由使用如僅曝光電極部之圖案之光罩303之光微影法等進行過曝光之部分去除(圖3(c)),則可有效率地進行上述操作。並且,可設為僅於基板表面之與電極間之絕緣部對應之部分形成有抗蝕劑膜之狀態(圖3(d))。
關於將抗蝕劑膜去除而基板表面露出之部分、即電極形成部,為了將殘存於基板表面之結晶應變層或變質層等去除,而將基板浸漬於蝕刻液中以進行蝕刻處理。藉此,不存在抗蝕劑膜之部位之基板表面得到蝕刻而成為凹狀,存在抗蝕劑膜之部位成為凸狀並殘留下來(圖3(e))。繼而,將該狀態之基板浸漬於鍍敷液中,藉此,藉由鍍敷法於不存在抗蝕劑膜之部位之基板表面上形成鍍敷被膜304(圖3(f))。該凹狀部之被膜成為電極部。
若對上述步驟中所使用之鍍敷液之組成進行調整,則可於所形成之鍍敷被膜與基板之表面之間同時形成包含Te氧化物之中間層。作為此時所使用之鍍敷液,可設為除了用以藉由鍍敷使應形成之電極材料析出之成分以外,亦含有10 ml/L〜30 ml/L之35%濃度之鹽酸(HCl)者。於藉由鍍敷法而形成成為電極之被膜之情形時,認為會於基板之CdTe或CdZnTe與電極材料之反應部位產生Te變得過量之區域,若於其中存在HCl,則會促進鍍敷液中所存在之氧之吸入而形成Te氧化物。
若藉由上述方法同時形成電極與含有Te氧化物之中間層,則於電極間之絕緣部之側壁部與抗蝕劑膜下之絕緣部之端部之一部分亦會形成Te之氧化物層。於抗蝕劑膜下之絕緣部之端部之一部分亦會形成Te氧化物層之理由雖未必明確,但認為主要原因在於鍍敷液自端部滲入至抗蝕劑膜與絕緣部表面之界面。本發明之放射線檢測元件之特徵在於:距絕緣部之端部500 nm之內側之Te氧化物層之厚度為100 nm以下,該厚度亦可藉由將鍍敷時間、以及上述鹽酸濃度或鍍敷液中所包含之其他成分之濃度、進而液溫等鍍敷條件調整為適當之範圍而進行控制。
再者,電極之形成未必必須藉由上述鍍敷法進行,亦可藉由真空蒸鍍法或濺鍍法、化學氣相沈積(CVD)法等包括乾式法在內之其他公知之方法進行。但是,於該情形時,必須於形成電極之前另外實施用以於電極材料與基板之表面之間形成含有導電性之Te氧化物之中間層的步驟。於該情形時,絕緣部之端部之Te氧化物層之厚度亦可藉由視所應用之製程手段適當地調整條件而進行控制。
並且,藉由將殘留於電極間之絕緣部之表面上之抗蝕劑膜去除(剝離),可獲得本發明之放射線檢測元件之基本構成(圖3(g))。再者,不言而喻,可於將抗蝕劑膜去除之前於電極之表面進而形成凸塊下金屬(UBM)層、或於將抗蝕劑膜去除後藉由鈍化處理等進行作為最終元件之封裝等附加任意步驟。 [實施例]
以下,基於實施例、比較例對本發明之技術內容具體地進行說明。以下之實施例、比較例之記載僅不過為用以使本發明之技術內容之理解容易之具體例,本發明之技術範圍並不受該等具體例限制。
(實施例1) 準備由CdZnTe(II族元素中之Zn濃度為3 at%)單晶所構成且表面為(111)面之基板作為基板。將其洗淨後進行乾燥,並進行整個表面之蝕刻處理作為預處理。對於該基板之表面塗佈光阻劑並乾燥後,藉由經由具有與電極部對應之部分為透光性且與電極間之絕緣部對應之部分為遮光性之圖案之光罩對光阻劑膜進行紫外線(UV)曝光,而使感光部顯影並將之去除之UV微影法進行光阻劑膜之圖案化。再者,該例中之電極部之大小為0.2 mm×0.3 mm,相當於電極間之絕緣部之部分之寬度為40 μm。
繼而,將表面具有上述經圖案化之光阻劑膜之基板浸漬於由氫溴酸(HBr)300 ml、溴(Br)6 ml、水300 ml所構成之蝕刻液中,藉此進行基板表面之CdZnTe露出之部分、即形成電極之部分之蝕刻,而將殘留於基板表面之結晶應變、變質部分去除。將基板再次洗淨、乾燥後,將基板浸漬於將20 ml之35%鹽酸(HCl)混合於氯化鉑酸(IV)六水合物(H
2PtCl
6・6H
2O)1 g、純水1.2 L中而成之鍍敷液(35%HCl濃度≈16.4 ml/L)中,藉此進行由Pt之鍍敷被膜所構成之電極之形成。於該例中,將鍍敷液之溫度設定為50℃、將鍍敷時間設定為1分鐘而進行電極之形成。
於形成電極之後,將光阻劑去除,進行基板之洗淨、乾燥。然後,藉由聚焦離子束二次電子顯微鏡(FIB-SEM)對該例中所獲得之元件之剖面構造進行觀察。將藉由該FIB-SEM所得之剖面放大圖像示於圖4。根據放大圖像確認到於電極部,於經蝕刻而成為凹狀之CdZnTe基板之表面隔著含有Te氧化物之中間層形成有Pt電極層。該例中之含有上述Te氧化物之中間層與Pt電極層之厚度均為30〜50 nm。
又,於放大圖中與形成有電極之凹部相鄰地存在之凸部係相當於電極間之絕緣部之部位。於該凸部之側壁部分與凸部之上表面之端部附近形成有由Te之氧化物構成之層。並且,於該例中,確認到於距上述凸部、即電極間之絕緣部之端部,Te之氧化物層之厚度為30〜50 nm。進而,確認到隨著遠離絕緣部之端部而Te之氧化物層之厚度減少,存在以一端部與另一端部之中間點作為中心而Te之氧化物層消失之區域。
進而,對上述元件進行電壓施加試驗。試驗係藉由如下方式進行:將元件配置於不受放射線等電磁波影響之暗室內,使探針端子與隔著絕緣部相鄰之電極部之間接觸,測定施加有900 V之高電壓時所流過之電流值。其結果為,流經設置於暗室內之元件之電極間之漏電流值極小而獲得了良好之結果。
(比較例1) 於形成電極時,將使基板浸漬於鍍敷液中而形成Pt之鍍敷被膜之鍍敷時間設定為10分鐘,除此以外,全部以與實施例1相同之方法、條件製作元件。並且,對於所獲得之元件,藉由與實施例1相同之手法進行元件之剖面構造觀察。將該例中所獲得之元件之藉由FIB-SEM所得之剖面放大圖像示於圖5。於成為凹狀之電極部,於CdZnTe基板之表面與Pt電極層之間形成有包含Te氧化物之中間層之情況係與實施例1相同,但中間層之厚度厚於實施例1。該例中之上述包含Te氧化物之中間層與Pt電極層之厚度分別為250〜300 nm與30〜50 nm。
又,確認到如下情況:於成為凸狀之電極間之絕緣部之側壁部分與絕緣部之上表面之端部附近形成有由Te之氧化物構成之層,該方面亦與實施例1相同,但Te氧化物層較實施例1厚,尤其是絕緣部之端部中之Te之氧化物層之厚度達到260 nm。進而,顯示出若遠離絕緣部之端部則Te之氧化物層之厚度減少之傾向,但自絕緣部之一端部直至另一端部無法確認到存在Te之氧化物層明確消失之區域。進而,與實施例1同樣地進行電壓施加試驗,結果觀測到與實施例1相比顯著大之電極間之漏電流。
(比較例2) 於鍍敷液中不添加35%HCl且將鍍敷時間設定為3分鐘,除此以外,以與實施例1相同之方法、條件製作元件。並且,藉由與實施例1相同之手法對所獲得之元件進行元件之剖面構造觀察。於該例中,無法確認到於成為凹狀之電極部,於CdZnTe基板之表面與Pt電極層之間形成包含Te氧化物之中間層。再者,該例中之Pt電極層之厚度為120 nm。
於該例中,於成為凸狀之電極間之絕緣部之側壁部分與絕緣部之上表面之端部附近亦未形成由Te之氧化物構成之層。對於該例中所獲得之元件之電極部,藉由依據JIS H8504之鍍敷之密接性試驗中之膠帶試驗方法對電極鍍敷膜之密接性進行評價,結果確認到鍍敷膜之超過5%之面積剝離而電極之密接性、即元件之耐久性較差。
將該等結果彙總示於表1。 [表1]
[產業上之可利用性]
絕緣部端部之Te氧化物層厚度(nm) | 絕緣部之Te氧化物層之消失 | 漏電流 | 電極剝離 | 備註 | |
實施例1 | 40 | ○ | 微小 | 無 | 鍍敷時間1分鐘 |
比較例1 | 260 | × | 有 | 無 | 鍍敷時間10分鐘 |
比較例2 | 0 | - | - | 超過5% | 鍍敷液中未添加HCl |
根據本發明之技術,於用作放射線檢測器之主要構成之利用CdTe系結晶之光電效應之放射線檢測元件中,即便多個電極間之間隔變窄,亦可確實地確保電極間之絕緣性,從而防止於電極間產生漏電流。藉此,可促進放射線檢測元件中之電極之小面積高密度化、即像素之高解析度化、高精細化,而於利用X射線照片或X射線CT等藉由放射線檢測元件所獲得之繪製圖像之各種圖像分析、圖像診斷等技術及產業機器、進而使用其等之產業領域等可期待極大之貢獻。
100:放射線檢測元件 101:電極 200:基板 201:絕緣部 202:電極 203:中間層 204:Te氧化物層 301:基板 302:抗蝕劑膜 303:光罩 304:鍍敷被膜
圖1係放射線檢測元件之外觀圖 圖2係放射線檢測元件之剖面放大圖 圖3係放射線檢測元件之製造步驟之例 圖4係實施例1之放射線檢測元件之剖面放大圖像 圖5係比較例1之放射線檢測元件之剖面放大圖像
Claims (10)
- 一種放射線檢測元件,其於由含有碲化鎘或碲化鋅鎘之化合物半導體結晶所構成之基板之表面具備多個電極部及電極間之絕緣部,其特徵在於:於上述多個電極部與基板之間存在含有碲之氧化物之中間層,於距上述電極間之絕緣部之端部500μm之內側,碲氧化物層之厚度為100nm以下,上述電極間之絕緣部為含有碲化鎘或碲化鋅鎘之化合物半導體結晶。
- 如請求項1所述之放射線檢測元件,其中,上述電極間之絕緣部之寬度為100μm以下。
- 如請求項1或2所述之放射線檢測元件,其中,上述電極部係由含有鉑、金、或含鉑與金之至少一者之合金的薄膜所構成。
- 如請求項1或2所述之放射線檢測元件,其中,在與上述基板之表面垂直之剖面,上述電極部成為凹狀之形狀、上述電極間之絕緣部成為凸狀之形狀。
- 如請求項1或2所述之放射線檢測元件,其中,上述化合物半導體結晶係II族元素中之鋅之濃度為2at%以上且10at%以下之碲化鋅鎘結晶。
- 如請求項1或2所述之放射線檢測元件,其中,由上述化合物半導體結晶所構成之基板之表面為{111}、{110}、或{100}中之任一方位面。
- 一種放射線檢測元件之製造方法,其係請求項1至6中任一項所述之放射線檢測元件之製造方法,且包括:於由含有碲化鎘或碲化鋅鎘之化合物半導體結晶所構成之基板之表面,在與電極間之絕緣部對應之部分形成抗蝕劑膜;將形成有上述抗蝕劑膜之基板浸漬於鍍敷液中,藉此在與電極部對應之部分形成電極;及將上述抗蝕劑膜去除。
- 如請求項7所述之放射線檢測元件之製造方法,其藉由浸漬於上述鍍敷液中而形成上述電極,並且於上述電極部與基板之間形成含有碲之氧化物之中間層。
- 如請求項7或8所述之放射線檢測元件之製造方法,其中,上述鍍敷液含有10ml/L~30ml/L之35%濃度之鹽酸。
- 如請求項7或8所述之放射線檢測元件之製造方法,其中,藉由上述鍍敷液進行無電解鍍敷處理之時間為50秒以上且70秒以下。
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