TWI682420B - Ion implantation system and method with variable energy control - Google Patents

Ion implantation system and method with variable energy control Download PDF

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TWI682420B
TWI682420B TW104101458A TW104101458A TWI682420B TW I682420 B TWI682420 B TW I682420B TW 104101458 A TW104101458 A TW 104101458A TW 104101458 A TW104101458 A TW 104101458A TW I682420 B TWI682420 B TW I682420B
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workpiece
ion beam
ion
ion implantation
scanning
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TW104101458A
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TW201628042A (en
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克川 任
馬文 法雷
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美商艾克塞利斯科技公司
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Abstract

An ion implantation system and method for implanting ions at varying energies across a workpiece is provided. The system comprises an ion source configured to ionize a dopant gas into a plurality of ions and to form an ion beam. A mass analyzer is positioned downstream of the ion source and configured to mass analyze the ion beam. A deceleration/acceleration stage is positioned downstream of the mass analyzer. An energy filter may form part of the deceleration/acceleration stage or may positioned downstream of the deceleration/acceleration stage. An end station is provided having a workpiece support associated therewith for positioning the workpiece before the ion beam is also provided. A scanning apparatus is configured to scan one or more of the ion beam and workpiece support with respect to one another. One or more power sources are operably coupled to one or more of the ion source, mass analyzer, deceleration/acceleration stage, and energy filter. A controller is configured to selectively vary one or more voltages respectively supplied to one or more of the deceleration/acceleration stage and the energy filter concurrent with the scanning of the ion beam and/or workpiece support, wherein the selective variation of the one or more voltages is based, at least in part, on a position of the ion beam with respect to the workpiece support.

Description

離子植入系統及具有可變能量控制的方法 Ion implantation system and method with variable energy control

本發明係大致有關於離子植入系統，並且更明確地說是有關於一種用於在工件的離子植入期間提供選擇性控制的可變能量至一被傳遞至工件的離子束之系統及方法。 The present invention relates generally to ion implantation systems, and more specifically to a system and method for providing selectively controlled variable energy to an ion beam delivered to a workpiece during ion implantation of the workpiece .

相關申請案之參照 Reference to related applications

此申請案係主張2014年1月15日申請的名稱為"離子植入系統及具有可變能量控制的方法"之美國臨時申請案號61/927,811的益處，該申請案的內容係在此以其整體被納入作為參考。 This application claims the benefits of US Provisional Application No. 61/927,811, entitled "Ion Implantation System and Method with Variable Energy Control", filed on January 15, 2014. The content of this application is here The whole is incorporated as a reference.

在半導體裝置的製造中，離子植入係被用來將半導體摻雜雜質。離子植入系統經常被利用來在一積體電路的製造期間，將一例如是矽或鍺晶圓的工件摻雜來自離子束的離子，以便於產生n型或p型材料的摻雜、或是形成保護層。當用於摻雜半導體晶圓時，該離子植入系統係注入一所選的離子物種到該工件中，以在該工件的基體材料中產生所要的電性特徵。例如，產生自像是銻、砷或磷的來源材料的植入離子係產生一"n型"材料特徵，而一"p型"材料特徵則產生自利用例如是硼、鎵或銦的來源材料所產生的離子。 In the manufacture of semiconductor devices, ion implantation systems are used to dope semiconductors with impurities. Ion implantation systems are often used to dope a workpiece, such as a silicon or germanium wafer, with ions from the ion beam during the manufacture of an integrated circuit to facilitate the doping of n-type or p-type materials, or Is to form a protective layer. When used to dope semiconductor wafers, the ion implantation system implants a selected ion species into the workpiece to produce the desired electrical characteristics in the base material of the workpiece. For example, an implanted ion system generated from a source material like antimony, arsenic, or phosphorus produces an "n-type" material feature, and a "p-type" material feature is derived from the use of a source material such as boron, gallium, or indium The generated ions.

典型的離子植入系統包含一用於從可離子化的來源材料產生帶電的離子之離子源。所產生的離子係利用一強的電場而被形成為一高速的離子束，以從該離子源吸引離子並且導引該些離子沿著一預設的射束路徑至一植入終端站，該植入終端站係容許該工件能夠被傳輸在該射束的路徑中。該離子植入器可包含延伸在該離子源與終端站之間的射束形成及成形結構。該些射束形成及成形結構係維持該離子束，並且界定該離子束通往該終端站所通過之一細長的內部凹處或通道。在操作期間，此通道通常是被抽真空以便於降低離子由於和氣體分子碰撞而偏離該預設的射束路徑的機率。 A typical ion implantation system includes an ion source for generating charged ions from ionizable source materials. The generated ion system is formed into a high-speed ion beam by using a strong electric field to attract ions from the ion source and guide the ions along a predetermined beam path to an implantation terminal station. The implantation terminal station allows the workpiece to be transported in the path of the beam. The ion implanter may include a beam forming and shaping structure extending between the ion source and the terminal station. The beam forming and shaping structures maintain the ion beam and define an elongated internal recess or channel through which the ion beam passes to the terminal station. During operation, this channel is usually evacuated to reduce the probability that ions will deviate from the preset beam path due to collisions with gas molecules.

普遍的是，在該離子植入系統中被植入的工件是一具有尺寸遠大於離子束的尺寸之半導體晶圓。在大多數的離子植入應用中，植入的目標是均勻地在該工件或晶圓的表面的整個面積上傳遞一摻雜物之一精確控制的量。為了達成利用一具有尺寸遠小於該工件面積的離子束的摻雜均勻性，一種被廣泛使用的技術是所謂的混合掃描系統，其中一小尺寸的離子束係在一方向上快速地來回掃過或掃描，並且該工件係沿著掃描的離子束之正交的方向機械式地移動。 It is common that the workpiece to be implanted in the ion implantation system is a semiconductor wafer having a size much larger than that of the ion beam. In most ion implantation applications, the goal of implantation is to uniformly deliver a precisely controlled amount of one of the dopants over the entire area of the surface of the workpiece or wafer. In order to achieve the uniformity of doping with an ion beam having a size much smaller than the area of the workpiece, a widely used technique is a so-called hybrid scanning system in which a small-size ion beam is quickly scanned back and forth in one direction or Scanning, and the workpiece is mechanically moved in the direction orthogonal to the scanned ion beam.

或者是，帶狀(ribbon)射束系統是已知的，其係從離子源提供一縱長的離子束，其中該射束係被容許在其朝向該工件行進時進一步發散，藉此以在該工件沿著該縱長的離子束的正交的方向被機械式地移動時，橫跨該工件的整個寬度散佈離子。在又一替代方案中，所謂的"筆形(pencil)射束"系統是已知的，其中離子束係以一點的形式被呈現至該工件，同時該工件是在兩個維度上被掃描，藉此利用來自該筆形射束的離子來"畫" 整個晶圓。 Alternatively, a ribbon beam system is known, which provides a longitudinal ion beam from an ion source, where the beam system is allowed to diverge further as it travels toward the workpiece, thereby When the workpiece is mechanically moved in the direction orthogonal to the longitudinal ion beam, ions are spread across the entire width of the workpiece. In yet another alternative, the so-called "pencil beam" system is known, in which the ion beam system is presented to the workpiece in the form of a point, while the workpiece is scanned in two dimensions. This uses the ions from the pen-shaped beam to "paint" The entire wafer.

藉由一離子束而被植入一工件中的離子劑量傳統上已經是藉由在掃描速度(例如，工件相對離子束的一速度、或者反之亦然)上的變化來加以控制。例如，授予Berrian等人的美國專利號4,922,106係揭示一種離子植入系統，其中一離子束係以一種受控的方式掃描且橫越在一工件之上，以達到一所選的射束電流以及在該工件上之對應的離子劑量。Berrian等人的專利之另一特點是一種用於感測入射在該工件的離子束並且控制該離子束至該工件的曝露之方法及裝置，以便於在該工件達到一所選的離子劑量，其特定目的為在該工件的整個表面上獲得一高度均勻的劑量。 The ion dose implanted into a workpiece by an ion beam has traditionally been controlled by changes in scanning speed (eg, a speed of the workpiece relative to the ion beam, or vice versa). For example, U.S. Patent No. 4,922,106 issued to Berrian et al. discloses an ion implantation system in which an ion beam is scanned and traversed over a workpiece in a controlled manner to achieve a selected beam current and The corresponding ion dose on the workpiece. Another feature of the Berrian et al. patent is a method and apparatus for sensing the ion beam incident on the workpiece and controlling the exposure of the ion beam to the workpiece, so as to achieve a selected ion dose at the workpiece, Its specific purpose is to obtain a highly uniform dose over the entire surface of the workpiece.

在更加精細的積體電路製造技術中，對於在工件上產生被植入不同劑量的多個區域而言，藉由以一種非均勻的方式植入離子的植入製程之控制可能是有利的。例如，授予Iwasawa等人的美國專利號6,750,462係揭示一種離子植入方法及裝置，其中複數個離子植入步驟係藉由改變該工件的一驅動速度而被執行。再者，一旋轉步驟係被提供，以用於在該離子束未施加至該工件時的個別的植入步驟之間繞著工件中心旋轉該工件一指定的角度，以便於提供具有一橫跨工件表面之選擇性控制的離子劑量之被植入的工件。 In more elaborate integrated circuit manufacturing techniques, it may be advantageous to control the implantation process by implanting ions in a non-uniform manner for producing multiple regions on the workpiece where different doses are implanted. For example, US Patent No. 6,750,462 issued to Iwasawa et al. discloses an ion implantation method and apparatus in which a plurality of ion implantation steps are performed by changing a driving speed of the workpiece. Furthermore, a rotation step is provided for rotating the workpiece about the center of the workpiece by a specified angle between the individual implantation steps when the ion beam is not applied to the workpiece, in order to provide a span The implanted workpiece with a selectively controlled ion dose on the surface of the workpiece.

通常，維持橫跨一工件的表面被植入的離子之一均勻的能量分布是所期望的。然而，授予Rouh等人的美國專利號7,576,339係揭示一種植入系統，其具有一能量控制特徵以用於根據被植入的晶圓的區域來控制離子束的離子植入能量。如同由Rouh等人所揭露的，進入一晶圓的離子植入能量的分布係根據在該晶圓上的離散或有限的區域來加以離散地(有限地) 改變，使得離子係以一相對高的植入能量被植入一第一區域中，並且離子係以一相對低的植入能量被植入一第二區域中。在Rouh等人的替代實施例中，該晶圓的一第一離散的區域係被植入一離散的低植入能量，一第二離散的區域係被植入一離散的高植入能量，並且一第三區域係再度被植入該低植入能量。同樣地，該離子植入能量係根據晶圓之離散的區域而離散地加以改變。 Generally, it is desirable to maintain a uniform energy distribution of one of the implanted ions across the surface of a workpiece. However, US Patent No. 7,576,339 issued to Rouh et al. discloses an implantation system with an energy control feature for controlling the ion implantation energy of the ion beam according to the area of the wafer being implanted. As disclosed by Rouh et al., the distribution of ion implantation energy into a wafer is discretely (limitedly) based on discrete or limited areas on the wafer Changes such that the ion system is implanted into a first region with a relatively high implant energy, and the ion system is implanted into a second region with a relatively low implant energy. In an alternative embodiment of Rouh et al., a first discrete area of the wafer is implanted with a discrete low implant energy, and a second discrete area is implanted with a discrete high implant energy, And a third area is again implanted with the low implant energy. Similarly, the ion implantation energy is discretely changed according to discrete regions of the wafer.

以下係提出本揭露內容之一簡化的概要，以便於提供對於本揭露內容的某些特點之一基本的理解。此概要並非本發明之廣泛的概觀。其並非打算指出本發明的關鍵或重要的元件、也非描述本發明的範疇。其目的是以簡化的形式提出本發明的某些概念來作為稍後所提出的更詳細的說明之一引言。 The following is a simplified summary of one of the contents of this disclosure in order to provide a basic understanding of some of the features of this disclosure. This summary is not an extensive overview of the invention. It is not intended to point out key or important elements of the invention, nor to describe the scope of the invention. Its purpose is to present some concepts of the invention in a simplified form as a prelude to the more detailed description that is presented later.

本揭露內容係大致有關於一種用於和一工件以及一離子束相對於彼此平移同時的選擇性的連續變化被植入到該工件中的離子的能量之系統、裝置及方法。 The present disclosure generally relates to a system, device, and method for continuously changing the energy of ions implanted into a workpiece while a workpiece and an ion beam are translated relative to each other while shifting relative to each other.

一種離子植入系統係被提出，其包含一被配置以離子化一摻雜物氣體成為複數個離子並且形成一離子束的離子源；以及被設置在該離子源的下游並且被配置以質量分析該離子束的質量分析器。一電極級係被設置在該質量分析器的下游，以用於響應被施加至其的偏壓電壓來加速或減速該離子束。再者，一能量過濾器係被設置以用於偏轉該離子束，其中一輸出偏轉角度可藉由根據該離子束的能量來選擇性地改變施加至該能量過濾器的偏壓電壓來加以維持。一終端站係被設置在該能量過濾器的下 游，其中該終端站係具有一與其相關的工件支撐件。 An ion implantation system is proposed that includes an ion source configured to ionize a dopant gas into a plurality of ions and form an ion beam; and an ion source disposed downstream of the ion source and configured for mass analysis The mass analyzer of the ion beam. An electrode stage system is provided downstream of the mass analyzer for accelerating or decelerating the ion beam in response to the bias voltage applied thereto. Furthermore, an energy filter is provided for deflecting the ion beam, wherein an output deflection angle can be maintained by selectively changing the bias voltage applied to the energy filter according to the energy of the ion beam . A terminal station is set under the energy filter Where the terminal station has a workpiece support associated with it.

在一較佳實施例中，本揭露內容係進一步設置有一掃描裝置，其被配置以相對彼此掃描該離子束及/或工件支撐件中的一或多個。一或多個電源係可操作地耦接至該離子源、質量分析器、電極級、以及能量過濾器中的一或多個。一控制器係進一步加以設置，並且被配置以和該點狀(spot)離子束及/或工件支撐件的掃描同時的選擇性地改變分別被供應至該電極級以及該能量過濾器中的一或多個的一或多個電壓，其中該一或多個電壓的選擇性的改變是至少部分根據該離子束相對該工件支撐件的一位置而定。 In a preferred embodiment, the present disclosure is further provided with a scanning device configured to scan one or more of the ion beam and/or the workpiece support relative to each other. One or more power supplies are operatively coupled to one or more of the ion source, mass analyzer, electrode stage, and energy filter. A controller is further provided and is configured to selectively change one of the electrode stage and the energy filter to be supplied simultaneously with the scanning of the spot ion beam and/or workpiece support, respectively One or more voltages, wherein the selective change of the one or more voltages depends at least in part on a position of the ion beam relative to the workpiece support.

在本揭露內容的另一實施例中，一種用於提供一工件的選擇性的持續可變能量的離子植入之方法係被提出。該方法係包括導引一離子束朝向一工件；相對於彼此地掃描該離子束及工件中的一或多個；以及和該點狀離子束及工件中的一或多個的掃描同時的選擇性地改變該離子束的一能量的動作。於是，離子植入到該工件中之一所產生的深度係受到控制，並且沿著該工件的一表面以一種連續的方式選擇性地加以改變。 In another embodiment of the present disclosure, a method for providing selective continuous variable energy ion implantation of a workpiece is proposed. The method includes directing an ion beam toward a workpiece; scanning the ion beam and one or more of the workpiece relative to each other; and selecting simultaneously with the scanning of the spot ion beam and one or more of the workpiece To change the energy of the ion beam. Thus, the depth of ion implantation into one of the workpieces is controlled and selectively changed along a surface of the workpiece in a continuous manner.

100‧‧‧工件 100‧‧‧Workpiece

102‧‧‧氧化層 102‧‧‧Oxide layer

104、104A、104B‧‧‧厚度 104, 104A, 104B ‧‧‧ thickness

106‧‧‧表面 106‧‧‧Surface

108‧‧‧周邊區域 108‧‧‧ surrounding area

110‧‧‧周邊 110‧‧‧ peripheral

112‧‧‧中心區域 112‧‧‧ Central area

200‧‧‧工件 200‧‧‧Workpiece

202‧‧‧掃描的離子束 202‧‧‧ Scanned ion beam

204‧‧‧掃描方向 204‧‧‧ Scanning direction

206‧‧‧氧化層 206‧‧‧Oxide layer

208‧‧‧深度 208‧‧‧Depth

210‧‧‧邊緣(周邊) 210‧‧‧ Edge (periphery)

212‧‧‧深度 212‧‧‧Depth

214‧‧‧中心 214‧‧‧ Center

216‧‧‧厚度 216‧‧‧thickness

218‧‧‧厚度 218‧‧‧thickness

410‧‧‧離子植入系統 410‧‧‧Ion implantation system

412‧‧‧終端 412‧‧‧Terminal

414‧‧‧束線組件 414‧‧‧Bundle assembly

416‧‧‧終端站 416‧‧‧Terminal

418‧‧‧狹縫 418‧‧‧ slit

420‧‧‧離子源 420‧‧‧Ion source

421‧‧‧產生室 421‧‧‧ Production room

422‧‧‧電源供應器 422‧‧‧Power supply

423‧‧‧離子抽取組件 423‧‧‧Ion extraction module

424‧‧‧離子束 424‧‧‧Ion beam

424a~424g‧‧‧小射束 424a~424g‧‧‧small beam

425‧‧‧抽取/抑制電極 425‧‧‧Extraction/suppression electrode

425a、425b‧‧‧電極 425a、425b‧‧‧electrode

426‧‧‧質量分析器 426‧‧‧Quality Analyzer

427‧‧‧側壁 427‧‧‧Sidewall

430‧‧‧工件 430‧‧‧Workpiece

432‧‧‧束導 432‧‧‧beam guide

434‧‧‧解析孔 434‧‧‧Analysis hole

435‧‧‧掃描系統 435‧‧‧ Scanning system

436‧‧‧掃描元件 436‧‧‧scanning element

436a、436b‧‧‧電極 436a、436b‧‧‧electrode

437‧‧‧行進的距離 437‧‧‧ distance traveled

438‧‧‧聚焦/引導元件/平行化器 438‧‧‧focus/guide element/parallelizer

438a、438b‧‧‧電極 438a, 438b ‧‧‧ electrode

439‧‧‧平行化器 439‧‧‧Parallelizer

439a、439b‧‧‧雙極磁鐵 439a, 439b ‧‧‧ bipolar magnet

441‧‧‧掃描頂點 441‧‧‧ scanning vertex

449‧‧‧電源供應器 449‧‧‧Power supply

450‧‧‧電源供應器 450‧‧‧Power supply

452‧‧‧劑量系統 452‧‧‧Dose system

454‧‧‧控制系統 454‧‧‧Control system

456‧‧‧分析器 456‧‧‧Analyzer

457‧‧‧加速或減速/過濾子系統 457‧‧‧Acceleration or deceleration/filtration subsystem

457a、457b‧‧‧電極 457a、457b‧‧‧electrode

458‧‧‧分析器路徑 458‧‧‧Analyzer path

460‧‧‧波形圖 460‧‧‧waveform

470‧‧‧步進馬達 470‧‧‧stepping motor

500‧‧‧電極柱 500‧‧‧electrode column

502‧‧‧第一電極 502‧‧‧First electrode

504‧‧‧第二電極 504‧‧‧Second electrode

506‧‧‧第一孔 506‧‧‧First hole

508‧‧‧第二孔 508‧‧‧Second hole

510‧‧‧間隙 510‧‧‧Gap

512‧‧‧軸 512‧‧‧axis

514‧‧‧上方的間隙中的電極 514‧‧‧ electrode in the gap above

516‧‧‧下方的間隙中的電極 516‧‧‧ electrode in the gap below

518‧‧‧第一上方的子間隙區域 518‧‧‧Sub-gap area above the first

520‧‧‧第一下方的子間隙區域 520‧‧‧Sub-gap area under the first

522‧‧‧第二上方的子間隙區域 522‧‧‧Sub-gap area above the second

524‧‧‧第二下方的子間隙區域 524‧‧‧Second sub-gap area

526‧‧‧離子束 526‧‧‧Ion beam

528‧‧‧點 528‧‧‧

530‧‧‧中性區域 530‧‧‧Neutral area

532‧‧‧角落 532‧‧‧ corner

534‧‧‧電極 534‧‧‧electrode

536‧‧‧電極 536‧‧‧electrode

600‧‧‧方法 600‧‧‧Method

602‧‧‧動作 602‧‧‧Action

604‧‧‧動作 604‧‧‧Action

606‧‧‧動作 606‧‧‧Action

608‧‧‧動作 608‧‧‧Action

610‧‧‧動作 610‧‧‧Action

圖1是一其上具有一氧化層的工件的一部分的橫截面圖，其係展示一習知的化學機械平坦化或拋光(CMP)製程於其上的效應。 FIG. 1 is a cross-sectional view of a portion of a workpiece having an oxide layer thereon, which shows the effect of a conventional chemical mechanical planarization or polishing (CMP) process thereon.

圖2係描繪一範例的工件的一橫截面圖，其係根據本揭露內容之一特點，和掃描同時的進行具有一在離子能量上的變化之離子植入，以提供一連續可變的深度之離子植入。 FIG. 2 depicts a cross-sectional view of an exemplary workpiece, which is an ion implant with a change in ion energy according to one of the features of the present disclosure, while scanning, to provide a continuously variable depth Ion implantation.

圖3係描繪一範例的工件的一橫截面圖，其已經進行根據本揭露內容之一可變的深度/能量離子植入以及根據先前的說明之一CMP製程，其係描繪本揭露內容之一有利的應用。 FIG. 3 depicts a cross-sectional view of an example workpiece that has undergone variable depth/energy ion implantation according to the disclosure and a CMP process according to the previous description, which depicts one of the disclosure Favorable application.

圖4是根據本揭露內容的數個特點之一範例的離子植入系統的方塊圖。 FIG. 4 is a block diagram of an ion implantation system according to one example of several features of the present disclosure.

圖5是一範例的掃描器的概要圖，其可被納入根據本揭露內容的數個特點之一範例的離子植入系統中。 FIG. 5 is a schematic diagram of an exemplary scanner that can be incorporated into an exemplary ion implantation system according to one of several features of the present disclosure.

圖6是一具有通常被施加至圖5的掃描器的類型之三角波或"鋸齒波"電壓波形的繪圖；圖7是描繪單一掃描的離子束以及其在時間上的數個離散的點撞擊一工件的數個離散的點之立體圖；圖8是描繪一用於橫跨一工件的一表面掃描一離子束，以用於該工件的離子植入之典型的掃描圖案的側視圖；圖9是描繪用在根據本揭露內容的另一特點之一範例的離子植入裝置的減速級/角能量過濾器裝置的類型之電極柱所產生的減速及彎曲效應之圖。 Figure 6 is a plot of a triangular or "sawtooth" voltage waveform of the type normally applied to the scanner of Figure 5; Figure 7 is a depiction of a single-scan ion beam and its impact on several discrete points in time A perspective view of several discrete points of the workpiece; FIG. 8 is a side view depicting a typical scanning pattern for scanning an ion beam across a surface of a workpiece for ion implantation of the workpiece; FIG. 9 is A graph depicting the deceleration and bending effects produced by an electrode column of the type of deceleration stage/angular energy filter device of an ion implantation device according to an example of another feature of the disclosure.

圖10係描繪根據又一特點的一種用於改變在一掃描的離子束植入器中的一點狀離子束的一能量之方法。 FIG. 10 depicts a method for changing the energy of a spot-shaped ion beam in a scanning ion beam implanter according to yet another feature.

本揭露內容係大致有關於一種用於改變在一離子植入系統中的一離子束的一能量之系統、裝置及方法。在一特定的實施例中，用於改變離子束的能量之系統、裝置及方法係結合一種具有由麻薩諸塞州Beverly的艾克塞利斯技術公司所開發、製造及銷售的類型之掃描的筆形射 束系統架構來加以揭示。然而，亦被思及的是，本揭露內容可被實施在普遍已知的帶狀射束或筆形射束離子植入系統架構中，即如同將會進一步敘述者。 This disclosure generally relates to a system, device, and method for changing the energy of an ion beam in an ion implantation system. In a particular embodiment, the system, apparatus, and method for changing the energy of the ion beam incorporates a scan of the type developed, manufactured, and sold by Excellus Technology Corporation of Beverly, Massachusetts Pen shot Beam system architecture. However, it is also contemplated that the present disclosure can be implemented in a generally known ribbon beam or pencil beam ion implantation system architecture, as will be described further.

本揭露內容係可應用於各種的離子植入器，並且被思及用於在各種的離子植入器中的實施。例如，本揭露內容係可應用於三種類型的離子植入器：那些利用一在兩個維度上掃過一工件的離子束之離子植入器，其中一帶狀離子束係被界定為具有一縱長的尺寸大於被照射該離子束的工件的一寬度；那些利用一具有一相對靜態的橫截面尺寸的離子束並且其中工件係相對於該離子束而在兩個維度上被移動之離子植入器；以及那些利用一種混合系統之離子植入器，其中該離子束係相對於工件沿著一第一方向震盪或掃描，並且該工件係沿著一與該第一方向為橫向的第二方向而被移動。 This disclosure can be applied to various ion implanters, and is considered for implementation in various ion implanters. For example, this disclosure can be applied to three types of ion implanters: those that use an ion beam that sweeps a workpiece in two dimensions, where a ribbon ion beam is defined as having A longitudinal dimension is larger than a width of the workpiece irradiated with the ion beam; those using an ion beam having a relatively static cross-sectional dimension and in which the workpiece is moved in two dimensions relative to the ion beam Implanters; and those using a hybrid system of ion implanters, wherein the ion beam is oscillated or scanned relative to the workpiece along a first direction, and the workpiece is along a first direction transverse to the first direction Moved in two directions.

所揭露的在離子植入製程中的能量分布之選擇性的可變的控制是至今尚未被揭露或思及的，尤其是植入能量以一種橫跨一目標工件的表面之連續的方式之選擇性的可變的控制。因此，本揭露內容係提供一種用於以一種連續的方式改變由一離子束所植入的離子橫跨該工件的一能量分布之系統、裝置及方法。 The disclosed variable control of the selectivity of the energy distribution in the ion implantation process has not yet been revealed or considered, especially the choice of implantation energy in a continuous way across the surface of a target workpiece Variable control of sex. Therefore, the present disclosure provides a system, device, and method for changing the energy distribution of ions implanted by an ion beam across the workpiece in a continuous manner.

本揭露內容係對於存在於先進的積體電路製造中之一特定的問題提供一種解決方案。近來，積體電路製造產業已經採用適應性圖案化製程，其在許多情況中是依賴用於移除沉積在一半導體工件上的材料之輔助的製程。例如，一矽晶圓可被設置有一氧化層(或是一多晶矽或氮化物層)，其可能被曝露到一植入步驟，例如經由氫(例如，其係普遍使用於剝落 表面)或是經由例如是氟或氯的反應性離子(例如，其係普遍使用於改變該氧化層的化學成分)。一用於移除沉積在一半導體工件上的材料之較佳製程是所謂的化學機械平坦化或拋光(CMP)，其係一利用化學及機械力的組合來平滑化表面之製程。CMP可被想成是化學蝕刻及游離磨料(free abrasive)拋光的混合，並且是一種用於從一基板以一種平面且均勻的方式來移除材料之較佳的方法，因為除了其它方面之外，其係提供具有精確度及可重覆性的例如是在形成於一半導體晶圓上的銅及氧化物絕緣層之間的重要的介面處停止材料的移除之能力。 This disclosure provides a solution to a specific problem that exists in advanced integrated circuit manufacturing. Recently, the integrated circuit manufacturing industry has adopted adaptive patterning processes, which in many cases rely on auxiliary processes for removing materials deposited on a semiconductor workpiece. For example, a silicon wafer may be provided with an oxide layer (or a polysilicon or nitride layer), which may be exposed to an implantation step, for example via hydrogen (for example, it is commonly used for exfoliation Surface) or via reactive ions such as fluorine or chlorine (for example, it is commonly used to change the chemical composition of the oxide layer). A preferred process for removing material deposited on a semiconductor workpiece is the so-called chemical mechanical planarization or polishing (CMP), which is a process that uses a combination of chemical and mechanical forces to smooth the surface. CMP can be thought of as a mixture of chemical etching and free abrasive polishing, and is a preferred method for removing material from a substrate in a planar and uniform manner because, among other things It provides accuracy and repeatability, such as the ability to stop material removal at important interfaces between copper and oxide insulating layers formed on a semiconductor wafer.

儘管此製程的各種優點，該CMP製程仍然遭受到其並非總是橫跨該晶圓的表面均勻地移除某些材料層。更明確地說，已經發現到被移除的塗層(例如，通常是一氧化層)可能會有一彎曲的輪廓，其在該晶圓的中間較厚，並且在邊緣上是較薄的，此係產生一凸面的表面層。 Despite the various advantages of this process, the CMP process still suffers from not always removing certain material layers uniformly across the surface of the wafer. More specifically, it has been found that the removed coating (for example, usually an oxide layer) may have a curved profile, which is thicker in the middle of the wafer and thinner on the edges. It produces a convex surface layer.

本揭露內容目前體認到藉由在一CMP步驟之前使得該層遭受一離子植入步驟，所產生的經CMP處理的層可以具有一更均勻的厚度。尤其，待被移除的層的離子植入可以改變CMP材料的移除速率。更具體而言，材料移除速率可藉由離子被植入的深度來加以調適，因此離子被植入的深度係直接成比例於被植入的離子的能量。 The present disclosure currently recognizes that by subjecting the layer to an ion implantation step before a CMP step, the resulting CMP-treated layer can have a more uniform thickness. In particular, the ion implantation of the layer to be removed can change the removal rate of the CMP material. More specifically, the material removal rate can be adjusted by the depth of ion implantation, so the depth of ion implantation is directly proportional to the energy of the implanted ions.

一種類似的方法亦可以應用至一用於在一不均勻的層被形成在工件之間時，平滑化一工件表面的控制之蝕刻製程。根據表面層厚度而有不同的能量被傳遞至工件的不同部分之離子植入可以在不同的深度修改材料蝕刻速率。因此，在不同的晶圓位置的蝕刻移除層之最終的深度可以相稱原始的非均勻度來加以控制，並且因此在蝕刻之後產生一更均勻的 層。 A similar method can also be applied to a controlled etching process for smoothing the surface of a workpiece when an uneven layer is formed between the workpieces. Depending on the thickness of the surface layer, different energies are transferred to different parts of the workpiece. Ion implantation can modify the material etching rate at different depths. Therefore, the final depth of the etch-removed layer at different wafer positions can be controlled in proportion to the original non-uniformity, and thus produces a more uniform after etching Floor.

因此，本揭露內容係有利地解決在材料改性的領域中的問題，藉此致能先進的積體電路製造技術。有關由本發明人所思及的特定解決方案，圖1-3係被提供作為舉例說明的例子。例如，圖1係描繪一工件100，例如是具有被使用作為在半導體製程的最初步驟的工件基板的類型之習知的矽晶圓。在此舉例說明的例子中，一具有一預設厚度104的氧化層102已經被形成在該工件100的表面106上。此氧化層102接著可以經由CMP來加以處理，以達成所指定的特徵。 Therefore, the present disclosure advantageously solves the problems in the field of material modification, thereby enabling advanced integrated circuit manufacturing technology. Regarding the specific solution contemplated by the inventors, FIGS. 1-3 are provided as illustrative examples. For example, FIG. 1 depicts a workpiece 100, such as a conventional silicon wafer of the type used as a workpiece substrate in the first step of a semiconductor process. In the example illustrated here, an oxide layer 102 having a predetermined thickness 104 has been formed on the surface 106 of the workpiece 100. This oxide layer 102 can then be processed by CMP to achieve the specified characteristics.

一典型的CMP製程是使用結合一拋光墊的一種研磨且腐蝕性化學研漿(例如，一膠體)。該拋光墊以及工件100係藉由一動態拋光頭而被壓一起，該拋光頭係以不同的旋轉軸(亦即，非同心的)來加以旋轉。該CMP製程的目標是去移除材料並且整平任何不規則的表面構形，因此使得晶圓變為平坦或是平面的，此有時是必要的，以便於製備晶圓以用於額外的電路元件之後續的形成。例如，CMP處理可加以執行，以使得整個表面都在一微影系統的景深內、或是根據位置以選擇性地移除材料。 A typical CMP process uses an abrasive and corrosive chemical slurry (eg, a colloid) combined with a polishing pad. The polishing pad and workpiece 100 are pressed together by a dynamic polishing head, which rotates with different axes of rotation (ie, non-concentric). The goal of the CMP process is to remove material and smooth out any irregular surface configuration, thus making the wafer flat or planar, which is sometimes necessary to prepare the wafer for additional Subsequent formation of circuit elements. For example, the CMP process can be performed so that the entire surface is within the depth of field of a lithography system, or the material is selectively removed according to location.

儘管CMP製程在移除材料上是有效的，但是已經發現會在一留存於該工件100上的殘留的層中產生中心至邊緣的厚度的非均勻性。如同在圖1中所繪，此問題本身是在一大致凸面的氧化層102中表現出來。例如，在CMP製程之後的氧化層102在一接近該工件100的周邊110的周邊區域108中是薄的(例如，被描繪為厚度104A)，並且在一接近該工件的中心的中心區域112中是較厚的(例如，被描繪為厚度104B)。為了解決此問題，本揭露內容尤其思及一種用於植入離子在該氧化層內之可變的深度 處，以便於改變CMP的材料移除速率之系統及方法。 Although the CMP process is effective in removing material, it has been found that a center-to-edge thickness non-uniformity can occur in a residual layer remaining on the workpiece 100. As depicted in FIG. 1, this problem manifests itself in a substantially convex oxide layer 102. For example, the oxide layer 102 after the CMP process is thin in a peripheral region 108 close to the periphery 110 of the workpiece 100 (eg, depicted as a thickness 104A), and in a central region 112 close to the center of the workpiece It is thicker (for example, depicted as thickness 104B). In order to solve this problem, this disclosure specifically considers a variable depth for implanting ions in the oxide layer System and method for changing the material removal rate of CMP.

離子植入的深度是直接相關於被植入的離子的能量。藉由以一種對應於一所要的CMP移除速率修改的方式來控制離子植入的深度，本揭露內容係有利地修改橫跨該晶圓的表面之材料移除，以提供所要的均勻厚度以及其表面構形。因此，如同在圖2及3的範例的工件200中所繪，本發明之一範例的特點係被思及，其中離子係沿著該工件的一邊緣或周邊210，以一淺深度208而被植入(例如，一掃描的離子束在圖2中係被描繪為箭頭202，其係行進在一相對該工件的掃描方向204上)到一氧化層206中，而離子在朝向該工件的一中心214時係以一較大的深度212被植入。因此，在該氧化層206的後續的化學機械拋光之後，該氧化層的一厚度216可被做成是從該邊緣或周邊210至該中心214的橫跨該工件200均勻的，即如同在圖3中所描繪成的一經拋光的厚度218。此種可變的深度的離子植入係藉由本揭露內容的一種系統及方法而被致能，以用於在一離子植入中提供該離子植入能量之一連續的選擇性的改變。 The depth of ion implantation is directly related to the energy of the implanted ions. By controlling the depth of ion implantation in a manner that corresponds to a desired CMP removal rate modification, the present disclosure advantageously modifies the material removal across the surface of the wafer to provide the desired uniform thickness and Its surface configuration. Therefore, as depicted in the workpiece 200 of the example of FIGS. 2 and 3, the characteristics of an example of the present invention are considered, in which the ions are treated at a shallow depth 208 along an edge or periphery 210 of the workpiece Implanted (for example, a scanned ion beam is depicted as arrow 202 in FIG. 2 which travels in a scanning direction 204 relative to the workpiece) into an oxide layer 206, and the ions are directed toward a The center 214 is implanted with a larger depth 212. Therefore, after the subsequent chemical mechanical polishing of the oxide layer 206, a thickness 216 of the oxide layer can be made to be uniform across the workpiece 200 from the edge or periphery 210 to the center 214, as shown in the figure A polished thickness 218 depicted in 3. Such variable depth ion implantation is enabled by a system and method of the present disclosure for providing a continuous selective change of the ion implantation energy in an ion implantation.

將會瞭解到的是，先前的應用只是藉由本揭露內容的連續且可變的深度的離子植入系統及方法所致能的各種製程及應用中之一而已。本揭露內容以及申請專利範圍的範疇並不限於針對此問題的解決方案，也不限於一種用於在工件之一凸面的形狀、一凹面的形狀或是任何其它形狀或其它輪廓中提供可變的深度的植入之製程。本揭露內容之可變的、連續的、非均勻的離子能量植入製程可以用任何根據需要的方式來加以實施，以提供除了一非連續的可變的植入深度輪廓之外的一連續可變的植入深度輪廓。例如，所思及的是，本揭露內容可以經由離子植入能量之選擇性的 改變而被利用在其中選擇性可變的離子植入的深度是所要的任何所要的應用中。可能有一些原因是要以橫跨一工件的表面之不同的深度/能量來植入，其包含但不限於：橫跨該工件的臨界電壓的變化；在橫跨該工件的掃描寬度之植入的能量輪廓上的系統的輪廓變化；以及在單一晶圓上植入具有不同的電性特徵的多個晶粒之能力。 It will be understood that the previous application is only one of various processes and applications enabled by the continuous and variable depth ion implantation system and method of the present disclosure. The scope of this disclosure and the scope of the patent application are not limited to the solution to this problem, nor is it limited to a variable shape used in the shape of a convex surface of a workpiece, a concave surface or any other shape or other contour Deep implantation process. The variable, continuous, and non-uniform ion energy implantation process of the present disclosure can be implemented in any manner as required to provide a continuous process in addition to a non-continuous variable implantation depth profile Variable implant depth profile. For example, it is thought that the content of this disclosure can be selectively Changes are utilized in any desired application where the depth of ion implantation with variable selectivity is desired. There may be some reasons for implantation at different depths/energy across the surface of a workpiece, including but not limited to: changes in the critical voltage across the workpiece; implantation across the scan width of the workpiece The contour of the system changes on the energy profile; and the ability to implant multiple dies with different electrical characteristics on a single wafer.

因此，為了前述及相關的目的之達成，本發明係包括在以下完整敘述並且在申請專利範圍中特別被指出的特徵。以下的說明以及所附的圖式係詳細地闡述本發明的某些舉例說明的實施例。然而，這些實施例只是指出本發明的原理可被採用的各種方式中的幾種方式而已。本發明的其它目的、優點以及新穎的特徵從以下本發明的詳細說明，當結合該圖式加以考量時將會變成是明顯的。 Therefore, in order to achieve the aforementioned and related purposes, the present invention includes the features fully described below and particularly pointed out in the scope of the patent application. The following description and accompanying drawings illustrate some of the illustrated embodiments of the present invention in detail. However, these embodiments are only a few of the various ways in which the principles of the present invention can be adopted. Other objects, advantages, and novel features of the present invention will become apparent from the following detailed description of the present invention when considered in conjunction with the drawings.

於是，本發明現在將會參考該圖式來加以描述，其中相同的元件符號可能通篇的被用來指相似的元件。應瞭解的是，這些特點的說明只是舉例說明而已，並且它們不應該以限制性的意思加以解釋。在以下的說明中，為了解說的目的，許多特定的細節係被闡述，以便於提供本發明的徹底理解。然而，對於熟習此項技術者而言將會明顯的是，本發明可以在沒有這些特定的細節下加以實施。 Therefore, the present invention will now be described with reference to the drawings, in which the same element symbols may be used to refer to similar elements throughout. It should be understood that the descriptions of these features are only examples, and they should not be interpreted in a restrictive sense. In the following description, for the purpose of understanding, many specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention can be implemented without these specific details.

圖4係描繪一種範例的離子植入系統410，其中離子束能量可以如同在此所述的選擇性地加以改變及/或控制。該系統410係具有一終端412、一束線組件414、以及一終端站416。該終端412係包含一藉由一高電壓的電源供應器422所供電的離子源420，其係產生並且導引一離子束424至該束線組件414。就此點而言，該離子源420係產生帶電的離子，其係從 該來源經由抽取組件423而被抽取出並且形成該離子束424，其之後沿著一在該束線組件414中的射束路徑而被導引至該終端站416。 FIG. 4 depicts an exemplary ion implantation system 410 in which ion beam energy can be selectively changed and/or controlled as described herein. The system 410 has a terminal 412, a harness assembly 414, and a terminal station 416. The terminal 412 includes an ion source 420 powered by a high-voltage power supply 422, which generates and directs an ion beam 424 to the beam assembly 414. In this regard, the ion source 420 generates charged ions, which are derived from The source is extracted via extraction assembly 423 and forms the ion beam 424, which is then directed to the terminal station 416 along a beam path in the beamline assembly 414.

為了產生離子，一種待被離子化的摻雜物材料(未顯示)係被設置在該離子源420的一產生室421之內。例如，該摻雜物材料可以從一氣體源(未顯示)而被饋入該室421中。在一例子中，除了電源供應器422之外，將會體認到的是任意數量的適當的機構(未顯示)都可被利用以激勵在該離子產生室421內的自由電子，例如RF或微波激勵源、電子束注入源、電磁的來源及/或一在該室內產生電弧放電的陰極。被激勵的電子係和摻雜物氣體分子碰撞，藉此產生離子。一般而言，正離子係被產生，儘管在此的揭露內容亦可以適用於其中負離子被產生的系統。 In order to generate ions, a dopant material (not shown) to be ionized is disposed within a generation chamber 421 of the ion source 420. For example, the dopant material can be fed into the chamber 421 from a gas source (not shown). In one example, in addition to the power supply 422, it will be appreciated that any number of suitable mechanisms (not shown) can be utilized to excite free electrons in the ion generating chamber 421, such as RF or A microwave excitation source, an electron beam injection source, an electromagnetic source, and/or a cathode that generates an arc discharge in the chamber. The excited electron system collides with the dopant gas molecules, thereby generating ions. In general, positive ions are generated, although the disclosure herein can also be applied to systems in which negative ions are generated.

該些離子係可控制地透過一在該室421中的狹縫418，藉由一離子抽取組件423來加以抽取，其中該離子抽取組件係包括複數個抽取及/或抑制電極425。例如，該離子抽取組件423可包含一個別的抽取電源供應器(未顯示)，以偏壓該些抽取及/或抑制電極425以用於從該產生室421加速該些離子。可以體認到由於該離子束424包括相同帶電的微粒，因此該離子束可能有徑向向外的擴張或是射束"膨脹"的傾向，因為相同帶電的微粒在該離子束內會彼此排斥。亦可以體認到此射束膨脹的現象可能在低能量、高電流(例如，高導流係數(perveance))的射束中會加劇，其中許多相同帶電的微粒相當緩慢地移動在相同的方向上，並且其中在該些微粒之間有一大量的排斥力，但是有很小的粒子動量以保持該些微粒移動在該射束路徑的方向上。 The ion systems are controllably drawn through a slit 418 in the chamber 421 through an ion extraction assembly 423, where the ion extraction assembly includes a plurality of extraction and/or suppression electrodes 425. For example, the ion extraction assembly 423 may include another extraction power supply (not shown) to bias the extraction and/or suppression electrodes 425 for accelerating the ions from the generation chamber 421. It can be appreciated that since the ion beam 424 includes the same charged particles, the ion beam may have a tendency to expand radially outward or the beam "expands" because the same charged particles will repel each other within the ion beam . It can also be appreciated that the phenomenon of beam expansion may be exacerbated in low-energy, high-current (eg, high conductivity) beams, where many of the same charged particles move relatively slowly in the same direction There is a large amount of repulsive force between the particles, but there is a small particle momentum to keep the particles moving in the direction of the beam path.

於是，該抽取組件423一般是被配置成使得該離子束424係 以高能被抽取出，使得該離子束並不會膨脹(例如，使得該些微粒具有充分的動量以克服可能會導致射束膨脹的排斥力)。再者，在該整個系統中以一相當高的能量來傳輸該離子束424一般是有利的，其中此能量可以根據需要，就在離子植入該工件430內之前被降低，以提升射束保含(containment)。也可能有利的是產生及傳輸分子或叢集離子，其可以在一相當高能下被傳輸，但是以一較低的等同能量被植入，因為該分子或叢集的能量被分散在該分子的摻雜物原子之間。 Therefore, the extraction component 423 is generally configured such that the ion beam 424 is It is extracted with high energy so that the ion beam does not expand (for example, so that the particles have sufficient momentum to overcome the repulsive force that may cause the beam to expand). Furthermore, it is generally advantageous to transmit the ion beam 424 with a relatively high energy in the entire system, where this energy can be reduced as needed just before the ions are implanted into the workpiece 430 to improve the beam protection Containment. It may also be advantageous to generate and transport molecules or cluster ions, which can be transported at a relatively high energy, but implanted with a lower equivalent energy, because the energy of the molecule or cluster is dispersed in the doping of the molecule Between atoms.

該束線組件414係包含一束導432、一質量分析器426、一掃描系統435，一平行化器(parallelizer)439、以及一或多個加速或減速及/或過濾子系統457。該質量分析器426係被配置以具有一約九十度的角度，並且包括一或多個作用以在其中建立一(雙極)磁場的磁鐵(未顯示)。當該離子束424進入質量分析器426時，其藉由該磁場而被相應地彎曲，使得所要的離子沿著該射束路徑被傳輸，而具有不適當的電荷至質量比的離子則被拒絕。更具體而言，具有太大或是過小的電荷至質量比之離子會被不足偏轉或是過大偏轉，以便於被引導到該質量分析器426的側壁427中，因而該質量分析器係容許在該離子束424中的那些具有所要的電荷至質量比的離子能夠通過其，並且透過一解析孔434而離開。 The beam assembly 414 includes a beam guide 432, a mass analyzer 426, a scanning system 435, a parallelizer 439, and one or more acceleration or deceleration and/or filtering subsystems 457. The mass analyzer 426 is configured to have an angle of about ninety degrees, and includes one or more magnets (not shown) that act to establish a (bipolar) magnetic field therein. When the ion beam 424 enters the mass analyzer 426, it is bent accordingly by the magnetic field, so that the desired ions are transmitted along the beam path, and ions with an inappropriate charge-to-mass ratio are rejected . More specifically, ions with a too large or too small charge-to-mass ratio will be deflected insufficiently or excessively so as to be guided into the sidewall 427 of the mass analyzer 426, so the mass analyzer is allowed to The ions in the ion beam 424 that have the desired charge-to-mass ratio can pass therethrough and exit through a resolution hole 434.

一掃描系統435係進一步加以說明，其中該掃描系統例如包括一掃描元件436以及一聚焦及/或引導元件438。該掃描系統435可包括各種的掃描系統，例如是在授予Berrian等人的美國專利號4,980,562、授予Dykstra等人的5,091,655、授予Glavish的5,393,984、授予Benveniste等人的7,550,751、以及授予Vanderberg等人的7,615,763中所展示者，該些美國專 利的整體茲在此被納入作為參考。 A scanning system 435 is further described, wherein the scanning system includes, for example, a scanning element 436 and a focusing and/or guiding element 438. The scanning system 435 may include various scanning systems, such as U.S. Patent No. 4,980,562 issued to Berrian et al., 5,091,655 issued to Dykstra et al., 5,393,984 granted to Glavish, 7,550,751 granted to Benveniste et al., and 7,615,763 granted to Vanderberg et al. The exhibitors in the Lee's overall is hereby included as a reference.

在該範例的掃描系統435中，個別的電源供應器449、450係在操作上耦接至一掃描元件436以及一聚焦及引導元件438，並且更特定的說是耦接至位在其中的個別的電極436a、436b以及438a、438b。該聚焦及引導元件438係接收具有一相當窄的輪廓之經質量分析的離子束424(例如，在該舉例說明的系統410中的一"筆形"射束)，其中一藉由電源供應器450施加至該些板438a及438b的電壓係操作以聚焦及引導該離子束至該掃描元件436之一最佳的點，較佳的是一掃描頂點441。一藉由電源供應器449(例如，該電源供應器450亦可以作為該電源供應器449)施加至該些掃描器板436a及436b的電壓波形係接著來回地掃描該離子束424，以將該離子束424展開成一細長的"帶狀"射束(例如，一掃描的離子束424)，其具有一寬度可以是至少和所關注的工件一樣寬的、或是比該工件寬。將會體認到的是該掃描頂點441可被定義為在該光學路徑中，該帶狀射束的每個小射束(beamlet)或掃描的部分在已經藉由該掃描元件436掃描之後看起來所源自的點。 In the scanning system 435 of this example, the individual power supplies 449, 450 are operatively coupled to a scanning element 436 and a focusing and guiding element 438, and more specifically to the individual located therein Electrodes 436a, 436b and 438a, 438b. The focusing and guiding element 438 receives a mass-analyzed ion beam 424 with a relatively narrow profile (eg, a "pen" beam in the illustrated system 410), one of which is powered by a power supply 450 The voltages applied to the plates 438a and 438b operate to focus and direct the ion beam to an optimal point of the scanning element 436, preferably a scanning vertex 441. A voltage waveform applied to the scanner boards 436a and 436b by the power supply 449 (for example, the power supply 450 can also be used as the power supply 449) is then scanned back and forth of the ion beam 424 to The ion beam 424 unfolds into an elongated "ribbon" beam (eg, a scanned ion beam 424) having a width that can be at least as wide as or wider than the workpiece of interest. It will be appreciated that the scanning vertex 441 can be defined as being in the optical path, each beamlet or scanned portion of the ribbon beam is seen after having been scanned by the scanning element 436 The point from which it rises.

將會瞭解到的是，一種具有在此所述類型的離子植入系統可以利用不同類型的掃描系統。例如，靜電系統或磁性系統可被採用在本發明中。靜電掃描系統之一典型的實施例係包含一耦接至掃描器板或電極436a及436b的電源供應器，其中該掃描器436係提供一掃描的射束。該掃描器436係接收具有一相當窄的輪廓之經質量分析的離子束(例如，在該舉例說明的系統中之一"筆形"射束)，並且一藉由該電源供應器449而被施加至掃描器板436a及436b的電壓波形係操作以在該X方向(該掃描方向)上來 回地掃描該射束，以將該射束展開成為一細長的"帶狀"射束(例如，一掃描的射束)，其具有一有效的X方向寬度可以是至少和所關注的工件一樣寬、或是比該工件寬。類似地，在一磁性掃描系統中，一高電流供應器係連接至一電磁鐵的線圈。該磁場係被調整以掃描該射束。為了此揭露內容之目的，所有不向類型的掃描系統係被思及，並且該靜電系統係被使用於說明。該掃描的離子束424係接著通過平行化器438，該平行化器438係導引該射束在大致平行於該Z方向(例如，大致垂直於工件表面)而朝向該終端站416。 It will be appreciated that an ion implantation system of the type described herein can utilize different types of scanning systems. For example, an electrostatic system or a magnetic system can be adopted in the present invention. A typical embodiment of an electrostatic scanning system includes a power supply coupled to the scanner board or electrodes 436a and 436b, wherein the scanner 436 provides a scanning beam. The scanner 436 receives a mass-analyzed ion beam with a fairly narrow profile (for example, a "pen" beam in the illustrated system), and is applied by the power supply 449 The voltage waveforms to the scanner boards 436a and 436b operate to come in the X direction (the scanning direction) Scan the beam back to expand the beam into an elongated "ribbon" beam (eg, a scanned beam) with an effective X-direction width that can be at least the same as the workpiece of interest Wider, or wider than the workpiece. Similarly, in a magnetic scanning system, a high current supply is connected to the coil of an electromagnet. The magnetic field is adjusted to scan the beam. For the purpose of this disclosure, all types of scanning systems are considered, and the electrostatic system is used for illustration. The scanned ion beam 424 then passes through a parallelizer 438 that directs the beam toward the end station 416 substantially parallel to the Z direction (eg, substantially perpendicular to the workpiece surface).

參照圖5-6，該射束掃描器436的靜電版本係進一步描繪在圖5中，其在該射束路徑的兩個橫向側邊上具有一對掃描板或電極436a及436b、以及一提供交流電壓至電極436a及436b的電壓源450，即如同在圖6中的一"鋸齒波類型"的波形圖460所繪者。一介於掃描電極436a及436b之間的時變的電壓係橫跨其之間的射束路徑來產生一時變的電場，該射束係藉由該電場而沿著一掃描方向(例如，在圖5中的X方向)被彎曲或偏轉(例如是掃描)。當該掃描器電場是在從電極436a至電極436b的方向上時(例如，電極436a的電位是比電極436b的電位更正，例如是在圖6中的時間"e"、"f"及"g")，該離子束424之帶正電離子係在負X方向上(例如，朝向該電極436b)遭受到一橫向的力。當電極436a及436b是在相同的電位時(例如，在該掃描器436中的零電場，例如是在圖6中的時間"d")，該離子束424係未被修改地通過該掃描器436。當該電場是在從電極436b至電極436a的方向上時(例如，在圖6中的時間"a"、"b"及"c")，該離子束424之帶正電離子係在正X方向上(例如，朝向該電極436a)遭受到一橫向的力。用於舉例說明的目的，圖5係展示當該掃描的離子束424在掃描期間的時間上的數個離散的點通過 該掃描器436時的偏轉，其中極限的小射束424a及424g被標示以對應於圖6的時間"a"及"g"。 5-6, the electrostatic version of the beam scanner 436 is further depicted in FIG. 5, which has a pair of scanning plates or electrodes 436a and 436b on both lateral sides of the beam path, and a The voltage source 450 of the AC voltage to the electrodes 436a and 436b is as shown in the waveform diagram 460 of the "sawtooth wave type" in FIG. A time-varying voltage between scan electrodes 436a and 436b produces a time-varying electric field across the beam path between them, and the beam is along a scanning direction by the electric field (e.g. (X direction in 5) is bent or deflected (for example, scanning). When the scanner electric field is in the direction from the electrode 436a to the electrode 436b (for example, the potential of the electrode 436a is more positive than the potential of the electrode 436b, for example, at times "e", "f", and "g in FIG. 6 "), the positively charged ions of the ion beam 424 are subjected to a lateral force in the negative X direction (eg, toward the electrode 436b). When the electrodes 436a and 436b are at the same potential (for example, the zero electric field in the scanner 436, for example, the time "d" in FIG. 6), the ion beam 424 passes through the scanner unmodified 436. When the electric field is in the direction from electrode 436b to electrode 436a (for example, at times "a", "b", and "c" in FIG. 6), the positively charged ions of the ion beam 424 are at positive X A lateral force is applied in the direction (for example, toward the electrode 436a). For illustrative purposes, FIG. 5 shows when the scanned ion beam 424 passes through several discrete points in time during the scan The deflection of the scanner 436, where the extreme beamlets 424a and 424g are marked to correspond to the times "a" and "g" of FIG.

低能量的植入器通常是被設計以提供幾千電子伏特(keV)到高達約80-100keV的離子束，而高能量的植入器可以在圖4的質量分析器426與終端站416之間利用RF線性加速(linac)裝置(未顯示)，以加速經質量分析的離子束424至通常是數個百keV的較高能量，其中DC加速也是可行的。高能量的離子植入通常是被採用於該工件430中之較深的植入。相反地，高電流、低能量(高導流係數)的離子束424通常是被採用於高劑量、淺深度的離子植入，在此情形中，該離子束的高導流係數通常會在維持該離子束424的均勻性上造成困難。 Low-energy implanters are usually designed to provide ion beams from several thousand electron volts (keV) to as high as about 80-100keV, while high-energy implanters can be located between mass analyzer 426 and end station 416 of FIG. An RF linear acceleration (linac) device (not shown) is used to accelerate the mass-analyzed ion beam 424 to a higher energy, usually several hundred keV, where DC acceleration is also feasible. High energy ion implantation is usually the deeper implant used in the workpiece 430. Conversely, the high current, low energy (high conductivity) ion beam 424 is usually used for high dose, shallow depth ion implantation. In this case, the high conductivity of the ion beam is usually maintained The uniformity of the ion beam 424 causes difficulties.

再次參照圖4，該掃描的離子束424接著通過該平行化器439。各種的平行化器系統439係由授予Dykstra等人的美國專利號5,091,655、授予Dykstra等人的5,177,366、授予Inoue的6,744,377、授予Rathmell等人的7,112,809、以及授予Vanderberg等人的7,507,978所展示，該些美國專利的整體茲在此被納入作為參考。如同其名稱所意味的，該平行化器439係使得具有發散的射線或小射束之進入的掃描的筆形射束被偏轉成為平行的射線或小射束424a，使得橫跨該工件430的植入參數(例如，植入角度)是均勻的。在目前描繪的實施例中，該平行化器439係包括兩個雙極磁鐵439a、439b，其中該些雙極是實質梯形的，並且被定向為彼此鏡射，以使得該離子束424彎曲成一實質"s形"。在一較佳實施例中，該些雙極係具有相等的角度以及相反的彎曲方向。 Referring again to FIG. 4, the scanned ion beam 424 then passes through the parallelizer 439. Various parallelizer systems 439 are shown by US Patent Nos. 5,091,655 to Dykstra et al., 5,177,366 to Dykstra et al., 6,744,377 to Inoue, 7,112,809 to Rathmell et al., and 7,507,978 to Vanderberg et al. The entirety of the US patent is hereby incorporated by reference. As the name implies, the parallelizer 439 causes the pen-shaped beam with the incoming rays of diverging rays or beamlets to be deflected into parallel rays or beamlets 424a so that the implant across the workpiece 430 The input parameters (eg, implantation angle) are uniform. In the presently depicted embodiment, the parallelizer 439 includes two bipolar magnets 439a, 439b, where the bipoles are substantially trapezoidal and are oriented to mirror each other so that the ion beam 424 is bent into one The substance is "s-shaped". In a preferred embodiment, the bipolar systems have equal angles and opposite bending directions.

該些雙極的主要目的是轉換源自於該掃描頂點441的複數 個發散的射線或小射束成為複數個具有一相當薄的細長的帶狀射束的形式之實質平行的射線或小射束。如同在此描繪的兩個對稱的雙極的使用係在小射束路徑長度以及一階與更高階的聚焦性質的方面產生橫跨該帶狀射束之對稱的特性。再者，類似於該質量分析器426的操作，該s形彎曲係作用以淨化該離子束424。尤其，在該質量分析器426的下游進入該離子束424的中性微粒及/或其它污染物(例如，環境的微粒)的軌道一般是不受到該些雙極影響(或是影響非常小)，使得這些微粒繼續沿著原始的射束路徑行進，因而並不被彎曲或是被彎曲非常小之一相當大量的這些中性微粒因此並不會影響到該工件430(例如，該工件係被設置以接收該彎曲的離子束424)。可以體認到從該離子束424移除此種污染物是重要的，因為它們可能具有一不正確的電荷、等等。一般而言，此種污染物將不會受到該系統410中的減速及/或其它級影響(或是被非常小程度的影響)。就此而論，它們可能對於該工件430就劑量及角度均勻性的方面而言具有一顯著的(儘管是非故意且一般是非所要的)影響。於是，此可能會產生未預料到而且非所要的所產生的裝置效能。 The main purpose of the dipoles is to convert the complex number derived from the scan vertex 441 The divergent rays or beamlets become a plurality of substantially parallel rays or beamlets in the form of a relatively thin, elongated ribbon beam. The use of two symmetrical dipoles as depicted here produces a symmetrical characteristic across the ribbon beam in terms of small beam path length and first-order and higher-order focusing properties. Furthermore, similar to the operation of the mass analyzer 426, the s-shaped bending system acts to purify the ion beam 424. In particular, the trajectories of neutral particles and/or other contaminants (eg, environmental particles) entering the ion beam 424 downstream of the mass analyzer 426 are generally not affected by the bipolar (or have very little effect) , So that these particles continue to travel along the original beam path, and therefore are not bent or are bent very small. A considerable amount of these neutral particles will not affect the workpiece 430 (for example, the workpiece is Set to receive the curved ion beam 424). It can be appreciated that it is important to remove such contaminants from the ion beam 424 because they may have an incorrect charge, etc. Generally speaking, such pollutants will not be affected (or by a very small degree) by the deceleration and/or other levels in the system 410. In this regard, they may have a significant (though unintentional and generally undesirable) effect on the workpiece 430 in terms of dose and angular uniformity. As a result, this may produce unexpected and undesirable device performance.

圖7係描繪經掃描及平行化的離子束424在圖6中指出之對應的時間影響該工件430。對於在該X方向上的橫跨該工件430之單一大致水平的掃描而言，在圖7中的經掃描及平行化的小射束424a係對應於在圖6中的時間"a"被施加的電極電壓，並且接著針對於在圖6之對應的時間"b"-"g"的掃描電壓，該些小射束424b-424g係被描繪在圖7中。圖8係描繪該離子束424橫跨該工件430的一直接的掃描，其中機械式致動(未顯示)係在藉由該掃描器436的X方向(例如，快速的掃描方向)掃描期間，在該正Y 方向(例如，緩慢的掃描方向)上平移該工件430，藉此該離子束424係被施予在該工件430的整個露出的表面上。 FIG. 7 depicts that the scanned and parallelized ion beam 424 affects the workpiece 430 at the corresponding time indicated in FIG. 6. For a single substantially horizontal scan across the workpiece 430 in the X direction, the scanned and parallelized beamlet 424a in FIG. 7 is applied corresponding to the time "a" in FIG. 6 Electrode voltage, and then for the scan voltage at the corresponding time "b"-"g" in FIG. 6, these small beams 424b-424g are depicted in FIG. 7. FIG. 8 depicts a direct scan of the ion beam 424 across the workpiece 430, wherein the mechanical actuation (not shown) is during scanning by the scanner 436 in the X direction (e.g., fast scan direction), In that positive Y The workpiece 430 is translated in a direction (eg, a slow scanning direction), whereby the ion beam 424 is applied to the entire exposed surface of the workpiece 430.

再次參照圖4，一或多個減速級457係被設置在該平行化構件439的下游。減速及/或加速系統的例子係被授予Dykstra等人的美國專利號5,091,655、授予Huang的6,441,382、以及授予Farley等人的8,124,946所展示，該些美國專利的整體茲在此被納入作為參考。如同先前指出的，到該系統410中的此點之前，該離子束424大致是以一相當高能量的位準來加以傳輸，以減輕射束膨脹的傾向，該傾向例如是在一解析孔434的其中射束密度被提高之處可能是特別高的。類似於該離子抽取組件423、掃描元件436以及聚焦及引導元件438，該減速級457係包括可運作以減速該離子束424的一或多個電極457a、457b。 Referring again to FIG. 4, one or more deceleration stages 457 are provided downstream of the parallelizing member 439. Examples of deceleration and/or acceleration systems are shown in US Patent Nos. 5,091,655 issued to Dykstra et al., 6,441,382 issued to Huang, and 8,124,946 issued to Farley et al. The entirety of these US patents is hereby incorporated by reference. As previously pointed out, before this point in the system 410, the ion beam 424 is generally transmitted at a relatively high energy level to reduce the tendency of the beam to expand, such as a resolution hole 434 Where the beam density is increased may be particularly high. Similar to the ion extraction assembly 423, scanning element 436, and focusing and guiding element 438, the deceleration stage 457 includes one or more electrodes 457a, 457b operable to decelerate the ion beam 424.

將會體認到的是，儘管兩個電極425a及425b、436a及436b、438a及438b、以及457a及457b係分別被描繪在該範例的離子抽取組件423、掃描元件436、聚焦及引導元件438、以及減速級457中，但是這些元件423、436、438及457可包括任何適當數量的電極，其被配置且偏壓以加速及/或減速離子、以及聚焦、彎曲、偏轉、收斂、發散、掃描、平行化及/或淨化該離子束424，例如是在授予Rathmell等人的美國專利號6,777,696中所提出者，該美國專利的整體茲在此被納入作為參考。此外，該聚焦及引導元件438可包括靜電偏轉板(例如，一或多個對的靜電偏轉板)、以及一單透鏡(Einzellens)、四極及/或其它聚焦元件，以聚焦該離子束。儘管不是必要的，但是施加電壓至元件438內的偏轉板以使得它們平均為零可能是有利的，其效果是避免必須引入一額外的單透鏡來減輕元件438的聚焦特徵的失 真。將會體認到的是，"引導"該離子束424是特別為板438a、438b的尺寸以及被施加至其的引導電壓的一函數，因為射束方向係成比例於該些引導電壓以及該些板的長度，並且成反比於該射束能量。 It will be appreciated that although the two electrodes 425a and 425b, 436a and 436b, 438a and 438b, and 457a and 457b are depicted in the example ion extraction component 423, scanning element 436, focusing and guiding element 438, respectively , And deceleration stage 457, but these elements 423, 436, 438, and 457 may include any suitable number of electrodes configured and biased to accelerate and/or decelerate ions, as well as focus, bend, deflect, converge, diverge, The ion beam 424 is scanned, parallelized, and/or cleaned, for example, as proposed in U.S. Patent No. 6,777,696 to Rathmell et al., the entirety of which is incorporated herein by reference. In addition, the focusing and guiding element 438 may include an electrostatic deflection plate (for example, one or more pairs of electrostatic deflection plates), and a single lens (Einzellens), quadrupole, and/or other focusing elements to focus the ion beam. Although not necessary, it may be advantageous to apply a voltage to the deflection plates in element 438 so that they average to zero. The effect is to avoid having to introduce an additional single lens to mitigate the loss of focusing characteristics of element 438 true. It will be appreciated that the “guiding” of the ion beam 424 is a function of the size of the plates 438a, 438b in particular and the guiding voltage applied to it, because the beam direction is proportional to the guiding voltages and the The length of these plates is inversely proportional to the beam energy.

現在轉到圖9，根據本揭露內容的一或多個特點之一範例的減速/加速級457係被更加詳細地描繪為一電極柱500，其係包含第一及第二電極502及504以及一對中間的電極板514及516。該第一及第二電極502及504係實質平行於彼此，並且分別界定第一及第二孔506及508。一間隙510係被界定在該些孔506、508之間，並且該些電極502、504係被配置成使得一實質垂直於該第一及第二電極502、504的軸512延伸通過該間隙510並且通過該第一及第二孔506、508。該些中間的電極板係包括一上方的間隙中的電極514以及一下方的間隙中的電極516。一第一上方的子間隙區域518係被界定在該第一電極502以及該上方的間隙中的電極514之間。一第一下方的子間隙區域520係被界定在該第一電極502以及該下方的間隙中的電極516之間。類似地，一第二上方的子間隙區域522係被界定在該第二電極504以及該上方的間隙中的電極514之間，並且一第二下方的子間隙區域524係被界定在該第二電極504以及該下方的間隙中的電極516之間。一離子束526係通過該間隙510並且例如從該軸512被偏轉例如約12度，並且聚焦在該間隙510的下游的一點528。 Turning now to FIG. 9, an example deceleration/acceleration stage 457 according to one or more features of the present disclosure is depicted in more detail as an electrode post 500, which includes first and second electrodes 502 and 504 and A pair of middle electrode plates 514 and 516. The first and second electrodes 502 and 504 are substantially parallel to each other, and define first and second holes 506 and 508, respectively. A gap 510 is defined between the holes 506, 508, and the electrodes 502, 504 are configured such that an axis 512 substantially perpendicular to the first and second electrodes 502, 504 extends through the gap 510 And through the first and second holes 506, 508. The middle electrode plates include an electrode 514 in the upper gap and an electrode 516 in the lower gap. A first upper sub-gap region 518 is defined between the first electrode 502 and the electrode 514 in the upper gap. A first lower sub-gap region 520 is defined between the first electrode 502 and the electrode 516 in the lower gap. Similarly, a second upper sub-gap region 522 is defined between the second electrode 504 and the electrode 514 in the upper gap, and a second lower sub-gap region 524 is defined in the second Between the electrode 504 and the electrode 516 in the lower gap. An ion beam 526 passes through the gap 510 and is deflected, for example, about 12 degrees from the axis 512, and is focused at a point 528 downstream of the gap 510.

在該舉例說明的例子中，特定的偏壓係被描繪以使得該電極柱500的操作之討論變得容易。然而，將會體認到的是，為了本揭露內容之目的，任何適當的偏壓都可被施加在該些電極之間以達成所要的結果(例如，一程度的加速、減速及/或偏轉)。確實，在其中可變的離子束能量是所 要的結果之本揭露內容的上下文中，將會瞭解到的是，施加至這些電極的偏壓電壓的改變將會是重要的。然而，在圖9中的偏壓值是有效的展現該離子束526的減速。 In the illustrated example, specific bias voltages are depicted to facilitate discussion of the operation of the electrode post 500. However, it will be appreciated that for the purposes of this disclosure, any suitable bias can be applied between the electrodes to achieve the desired result (eg, a degree of acceleration, deceleration, and/or deflection ). Indeed, the variable ion beam energy is In the context of the present disclosure, it will be appreciated that changes in the bias voltage applied to these electrodes will be important. However, the bias value in FIG. 9 is effective to exhibit the deceleration of the ion beam 526.

該離子束526以及更特定是內含在其中的正離子係以一最初的能量位準(例如，在所描繪的例子中是6KeV)，透過該第一孔506而進入該間隙510。為了加速或減速在該射束中的離子，該第一及第二電極502及504係被不同地偏壓，使得一在電位上的差值存在於其之間，並且該些離子在其通過介於該第一及第二電極502、504之間的間隙510時遭受到一在能量上之對應的增加或減少。譬如，在圖9所呈現的例子中，該離子束的正離子係在其從具有一負4KV偏壓的第一電極502通過至具有零電位(例如，耦接至接地)的第二電極504時，遭受到一4KeV的能量下降。因此，原始的正6KeV的離子束能量係在離子通過該間隙510時被降低到2KeV，因而遭受到一4KeV的能量下降。因此，該離子束526一旦在其離開該間隙510之後將會具有一特定產生的能量位準(例如，在所描繪的例子中是2KeV)，並且進入一在該間隙510的下游的中性區域530。 The ion beam 526 and, more specifically, the positive ion system contained therein passes through the first hole 506 and enters the gap 510 at an initial energy level (for example, 6 KeV in the depicted example). In order to accelerate or decelerate the ions in the beam, the first and second electrodes 502 and 504 are biased differently so that a difference in potential exists between them, and the ions pass through The gap 510 between the first and second electrodes 502, 504 suffers a corresponding increase or decrease in energy. For example, in the example presented in FIG. 9, the positive ion of the ion beam passes from the first electrode 502 with a negative 4KV bias to the second electrode 504 with zero potential (eg, coupled to ground) At the time, suffered a 4KeV energy drop. Therefore, the original positive 6KeV ion beam energy system is reduced to 2KeV when the ions pass through the gap 510, and thus suffers a 4KeV energy drop. Therefore, once the ion beam 526 leaves the gap 510, it will have a specifically generated energy level (eg, 2KeV in the depicted example) and enter a neutral region downstream of the gap 510 530.

將會體認到的是，不論離子通過該間隙510所可能採取的路徑為何，此都會成立。譬如，在所描繪的例子中，進入介於該第一電極502與下方的間隙中的電極516之間的下方的子間隙520的離子將會被加速在一速率大於進入介於該第一電極502與上方的間隙中的電極514之間的上方的子間隙518的離子將會被加速的速率。這是因為在電位上相較於在該第一電極502與上方的間隙中的電極514之間有的差值，在該第一電極502與下方的間隙中的電極516之間有一較大的差值(例如，該下方的子間隙520為 負2.5KV(負4KV減去負6.5KV)，而該上方的子間隙518為負0.5KV(負4KV減去負4.5KV))。 It will be appreciated that this is true regardless of the path that ions may take through the gap 510. For example, in the depicted example, ions entering the lower sub-gap 520 between the first electrode 502 and the electrode 516 in the lower gap will be accelerated at a rate greater than entering the first electrode The rate at which the ions in the upper sub-gap 518 between 502 and the electrode 514 in the upper gap will be accelerated. This is because there is a larger potential difference between the first electrode 502 and the electrode 516 in the gap below compared to the difference between the first electrode 502 and the electrode 514 in the gap above Difference (for example, the sub-gap 520 below this is Negative 2.5KV (negative 4KV minus negative 6.5KV), and the upper sub-gap 518 is negative 0.5KV (negative 4KV minus negative 4.5KV).

然而，此在加速上的差異係藉由在電位上，在該上方的間隙中的電極514以及下方的間隙中的電極516與該第二電極504之間的對應的差值來加以補償。譬如，在所描繪的例子中，該第二電極504係被偏壓為零(例如，耦接至接地)。因此，相較於來自該第一上方的子間隙518的離子，來自該第一下方的子間隙520的離子係被減速一較大的程度。此係補償當該些離子進入該間隙時的在該些離子的加速上的差異，使得當該些離子離開該間隙時，其都具有實質相同的能量(例如，2KeV)。來自該第一下方的子間隙520的離子將會被減速一較大的程度，因為當穿越該第二下方的子間隙524時，它們將必須橫越該負6.5KV(例如，該下方的間隙中的電極516的負6.5KV偏壓減去該第二電極504的零V偏壓)。相對地，來自該第一上方的子間隙518的離子將會被減速一較小的程度，因為當穿越該第二上方的子間隙522時，它們將會僅必須橫越該負4.5KV(例如，該上方的間隙中的電極614的負4.5KV偏壓減去該第二電極504的零V偏壓)。於是，不論該些離子所採用的不同路徑以及其下降的能量位準為何，從該間隙的效應所出現的離子是在實質相同的能量位準(例如，2KeV)。 However, this difference in acceleration is compensated by the corresponding difference in potential between the electrode 514 in the upper gap and the electrode 516 in the lower gap and the second electrode 504. For example, in the depicted example, the second electrode 504 is biased to zero (eg, coupled to ground). Therefore, the ion system from the first lower sub-gap 520 is decelerated to a greater degree than the ions from the first upper sub-gap 518. This compensates for the difference in acceleration of the ions when the ions enter the gap, so that when the ions leave the gap, they all have substantially the same energy (eg, 2KeV). Ions from the sub-gap 520 below the first will be decelerated to a greater degree because when crossing the sub-gap 524 below the second, they will have to traverse the negative 6.5 kV (eg, the lower (The negative 6.5 kV bias of the electrode 516 in the gap minus the zero V bias of the second electrode 504). In contrast, ions from the sub-gap 518 above the first will be decelerated to a lesser degree because when crossing the sub-gap 522 above the second, they will only have to traverse the negative 4.5KV (e.g. , The negative 4.5KV bias of the electrode 614 in the upper gap minus the zero V bias of the second electrode 504). Therefore, regardless of the different paths taken by the ions and the energy level at which they fall, the ions emerging from the effect of the gap are at substantially the same energy level (eg, 2KeV).

將會體認到的是，該上方及下方的間隙中的電極514、516係作用為將該射束拉入該間隙510中以加速或減速該離子束，並且為了射束過濾之目的而提供射束偏轉之雙重目的。例如，該間隙中的板514、516一般是被彼此不同地偏壓，因而一靜電場係被發展在其之間，以不是向上、就是向下彎曲或偏轉該射束、或是依據該些電極的偏壓大小以及相對於該 離子束的能量而具有變化的大小。譬如，在描述特徵的例子中，該上方及下方的間隙中的電極514、516係分別被偏壓至負4.5KV以及負6.5KV。假設該射束包含帶正電的離子，此在電位上的差值係使得通過該間隙510的帶正電的離子被向下推向該更帶負電的下方的間隙中的電極516，此最終使得該射束526向下彎曲或偏轉(例如，約12度)。將會瞭解到的是考慮到一變化能量的射束，為了維持此範例的12度偏轉，施加至該間隙中的電極514、516的偏壓亦必須以一對應的方式來加以改變。 It will be appreciated that the electrodes 514, 516 in the upper and lower gaps act to pull the beam into the gap 510 to accelerate or decelerate the ion beam, and are provided for the purpose of beam filtering The dual purpose of beam deflection. For example, the plates 514, 516 in the gap are generally biased differently from each other, so an electrostatic field is developed between them, to bend or deflect the beam either up or down, or according to these The size of the electrode bias and relative to the The energy of the ion beam has a varying magnitude. For example, in the example describing the features, the electrodes 514, 516 in the upper and lower gaps are biased to minus 4.5KV and minus 6.5KV, respectively. Assuming that the beam contains positively charged ions, the difference in potential is such that the positively charged ions passing through the gap 510 are pushed down to the electrode 516 in the more negatively charged gap below, which ultimately The beam 526 is bent or deflected downward (eg, about 12 degrees). It will be appreciated that considering a beam of varying energy, in order to maintain the 12-degree deflection of this example, the bias applied to the electrodes 514, 516 in the gap must also be changed in a corresponding manner.

例如，一離子束的加速可以藉由偏壓電極534、536至負4KV，同時偏壓電極502、506至正40KV來引發，儘管任何偏壓值亦被本揭露內容所思及。此偏壓配置係產生一延伸到該中性區域530內的負電位阻障。將會體認到的是，在這些被施加的偏壓電壓下，該裝置的操作係實質類似於參考圖5所述者，除了該射束526是被加速，而不是減速以外。這些範例的值是作用以從例如80KeV至120KeV的增加該射束的能量位準，此係加速該射束1.5倍，其中當該些離子橫越該第二上方的子間隙區域522以及第二下方的子間隙區域524時，在該射束526中的正離子將會被加速。 For example, the acceleration of an ion beam can be initiated by biasing electrodes 534, 536 to negative 4KV, while biasing electrodes 502, 506 to positive 40KV, although any bias value is also considered by this disclosure. This bias configuration creates a negative potential barrier that extends into the neutral region 530. It will be appreciated that under these applied bias voltages, the operation of the device is substantially similar to that described with reference to FIG. 5 except that the beam 526 is accelerated, not decelerated. The values of these examples are to increase the energy level of the beam from, for example, 80KeV to 120KeV, which accelerates the beam by 1.5 times, wherein when the ions traverse the sub-gap region 522 above the second and the second In the lower sub-gap region 524, the positive ions in the beam 526 will be accelerated.

將會體認到的是該上方的間隙中的電極514以及下方的間隙中的電極516的配置、組態設定及/或成形可被調適，以使得對於該射束的透鏡效應的控制變得容易。例如，在圖9描繪的圖示中，相對於該上方的間隙中的電極514的寬度，該下方的間隙中的電極516係具有一稍微縮減的寬度，並且亦具有一稍微斜角的角落532。這些調整係實質對抗靠近該下方的間隙中的電極516的離子在其因為於被施加的偏壓上的差異而進行較強的加速及/或減速時所遭受到的增大的透鏡效應。然而，將會體認到的是， 為了本揭露內容之目的，這些電極514、516可以具有任何適當的構形，其包含相同的形狀。進一步將會體認到的是，該射束可以在加速、減速及/或漂移(例如，零加速/減速)模式中加以彎曲，因為主要負責射束彎曲之上方及下方的間隙中的電極514、516是實質獨立於主要負責該射束510的加速/減速之第一及第二電極502、504來運作。 It will be appreciated that the configuration, configuration settings and/or shaping of the electrode 514 in the upper gap and the electrode 516 in the lower gap can be adapted so that the control of the lens effect of the beam becomes easy. For example, in the illustration depicted in FIG. 9, the electrode 516 in the lower gap has a slightly reduced width relative to the width of the electrode 514 in the upper gap, and also has a slightly beveled corner 532 . These adjustments substantially counteract the increased lens effect that the ions of the electrode 516 near the lower gap experience when they undergo strong acceleration and/or deceleration due to differences in applied bias. However, you will realize that For the purpose of this disclosure, these electrodes 514, 516 may have any suitable configuration, including the same shape. It will be further appreciated that the beam can be bent in acceleration, deceleration, and/or drift (eg, zero acceleration/deceleration) modes, because it is mainly responsible for the electrode 514 in the gap above and below the beam bend 516 is substantially independent of the first and second electrodes 502 and 504 which are mainly responsible for the acceleration/deceleration of the beam 510.

在電位上的所有差異之整體淨效果是在該射束526中的離子的聚焦、減速(或加速)以及偏轉。該離子束的偏轉係提供能量淨化，因為在該射束中的未受到該些電極的影響而阻礙的中性微粒係繼續沿著平行於該軸512之原始的射束路徑。例如，污染物接著可以遭遇到某種類型的阻障或吸收結構(未顯示)，其係阻止污染物前向的行進並且將任何工件從該些污染物屏蔽開。相對地，被偏轉的離子束526的軌跡係使得該射束適當地遭遇且摻雜該工件(未顯示)的選擇的區域。 The overall net effect of all differences in potential is the focusing, deceleration (or acceleration) and deflection of ions in the beam 526. The deflection of the ion beam provides energy purification because the neutral particles in the beam that are not obstructed by the electrodes continue to follow the original beam path parallel to the axis 512. For example, the contaminants may then encounter some type of barrier or absorption structure (not shown) that prevents the contaminants from traveling forward and shields any workpieces from those contaminants. In contrast, the trajectory of the deflected ion beam 526 is such that the beam properly encounters and doped selected areas of the workpiece (not shown).

將會體認到的是，該些電極(例如，介於該第一及第二電極502、504之間的上方及下方的間隙中的電極514、516)的配置亦作用以減輕射束膨脹，因為此構形係最小化該射束526在遭遇到晶圓之前所必須行進的距離。藉由使得該射束526被偏轉(例如，藉由該上方及下方的間隙中的電極514、516)，同時使得該射束聚焦(例如，藉由該第一及第二電極502、504)，而不是使得這些彎曲及聚焦級被串列配置，該終端站可以位在更靠近該離子植入系統的減速器級之處。 It will be appreciated that the configuration of the electrodes (e.g., electrodes 514, 516 in the gap above and below the first and second electrodes 502, 504) also acts to reduce beam expansion Because this configuration minimizes the distance the beam 526 must travel before encountering the wafer. By deflecting the beam 526 (eg, by the electrodes 514, 516 in the upper and lower gaps), while focusing the beam (eg, by the first and second electrodes 502, 504) Instead of having these bending and focusing stages arranged in series, the end station can be located closer to the reducer stage of the ion implantation system.

在該舉例說明的例子中，特定的偏壓係被描繪以使得圖4的減速級457的操作之更佳的理解變得容易。然而，將會體認到的是，為了本揭露內容之目的，任何適當的偏壓都可被施加在該些電極之間以達成 所要的結果，例如加速、減速、及/或偏轉的程度。再者，該些特定的偏壓係以一種選擇性地可變且受控制的方式而被施加，以便於達成本揭露內容之選擇性且可變能量的控制。然而，在圖9中之舉例說明的偏壓值是有效於展現該離子束526的減速。 In the illustrated example, specific bias voltages are depicted to facilitate a better understanding of the operation of the deceleration stage 457 of FIG. However, it will be appreciated that for the purpose of this disclosure, any suitable bias voltage can be applied between the electrodes to achieve The desired result, such as the degree of acceleration, deceleration, and/or deflection. Furthermore, the specific bias voltages are applied in a selectively variable and controlled manner in order to achieve selective and variable energy control of the cost disclosure content. However, the bias value illustrated in FIG. 9 is effective to exhibit the deceleration of the ion beam 526.

應注意到的是，該偏壓電壓的選擇性的改變例如可以進一步根據由一操作者以及圖4的工件430的一描述中之一所提供的一或多個預設的特徵而定，並且可以是反復的。例如，一種"鏈(chain)植入"可被執行，其中一離散數量的具有可變劑量的植入(例如，複數個"鏈")係被提供至該工件430。例如，每個"鏈"可以在植入之前，透過該工件430的一度量(metrology)圖來加以預設。因此，整體效果是一橫跨該工件430之非均勻的可變的摻雜深度輪廓，因此界定一能量圖案的植入。例如，不同能量的鏈可以反復地執行，其中在每次鏈中所提供的橫跨該工件的劑量及摻雜深度輪廓是均勻的。或者是，地形的(topographic)回授可以和該植入同時且/或在植入的鏈之間，被利用以選擇性地改變該偏壓電壓。 It should be noted that the selective change of the bias voltage may, for example, be further based on one or more preset features provided by an operator and one of the descriptions of the workpiece 430 of FIG. 4, and It can be repeated. For example, a "chain implant" may be performed, in which a discrete number of implants with variable doses (eg, a plurality of "chains") are provided to the workpiece 430. For example, each "chain" can be preset by a metrology diagram of the workpiece 430 before implantation. Therefore, the overall effect is a non-uniform variable doping depth profile across the workpiece 430, thus defining the implantation of an energy pattern. For example, chains of different energies can be executed repeatedly, where the dose and doping depth profiles across the workpiece provided in each chain are uniform. Alternatively, topographic feedback can be utilized concurrently with the implant and/or between implanted chains to selectively change the bias voltage.

再次轉到圖4，將會體認到的是，不同類型的終端站416都可被採用在該植入器410中。例如，一種"批次"類型的終端站可以在一旋轉支承結構上同時支承多個工件430，其中該些工件430係被旋轉以通過該離子束的路徑，直到所有的工件都完全被植入為止。在另一方面，一種"串列"類型的終端站係沿著用於植入的射束路徑支承單一工件430，其中多個工件430係以串列方式一次一個被植入，其中每個工件430是在下一個工件430的植入開始之前完全被植入。在混合系統中，該工件430可以機械式平移在一第一(Y或是緩慢的掃描)方向上，同時該射束係在一第二(X或是快速的 掃描)方向上掃描，以將該離子束424施加在該整個工件430上。對比之下，在一種如同此項技術中已知並且由麻薩諸塞州Beverly的艾克塞利斯技術公司製造及銷售的Optima HDTM離子植入系統所例示之所謂的二維機械式掃描架構中，該工件430可以在一固定位置的離子束的前面而在一第一(緩慢的)掃描方向上機械式平移，而該工件同時在一第二實質正交的(快速的)掃描方向上被掃描，以將該離子束424施加在該整個工件430上。 Turning again to FIG. 4, it will be appreciated that different types of end stations 416 can be used in the implanter 410. For example, a "batch" type terminal station can simultaneously support multiple workpieces 430 on a rotating support structure, where the workpieces 430 are rotated to pass the path of the ion beam until all the workpieces are completely implanted until. On the other hand, a "tandem" type of terminal station supports a single workpiece 430 along the beam path for implantation, where multiple workpieces 430 are implanted one at a time in a tandem manner, where each workpiece 430 is completely implanted before the implantation of the next workpiece 430 starts. In a hybrid system, the work piece 430 can be mechanically translated in a first (Y or slow scan) direction, while the beam is scanned in a second (X or fast scan) direction to shift The ion beam 424 is applied to the entire workpiece 430. In contrast, the so-called two-dimensional mechanical scanning architecture exemplified by an Optima HD TM ion implantation system as known in this technology and manufactured and sold by Excellis Technologies of Beverly, Massachusetts The workpiece 430 can be mechanically translated in a first (slow) scanning direction in front of an ion beam at a fixed position, while the workpiece is simultaneously in a second substantially orthogonal (fast) scanning direction It is scanned to apply the ion beam 424 to the entire workpiece 430.

在該舉例說明的例子中的終端站416是一種"串列"類型的終端站，其係沿著用於植入的射束路徑支承單一工件430。一劑量系統452係內含在該終端站416中的靠近該工件位置處，以用於在植入操作之前的校準量測。在校準期間，該離子束424係通過劑量系統452。該劑量系統452係包含一或多個可以持續地橫越一分析器路徑458的分析器456，藉此量測該掃描的射束的輪廓。例如，該分析器456可包括一例如是法拉第杯的電流密度感測器，其係量測該掃描的射束的電流密度，其中電流密度是植入角度(例如，在該射束與工件的機械表面之間的相對方位及/或在該射束與工件的晶格結構之間的相對方位)的一函數。該電流密度感測器係以一種相對該掃描的射束為大致正交的方式移動，並且因此通常係橫越該帶狀射束的寬度。在一例子中，該劑量系統係量測射束密度分布以及角度分布兩者。射束角度的量測可以使用一移動的分析器，其係在一如同於文獻中所敘述的具有槽的遮罩之後感測電流。來自該槽位置的每一個別的小射束在一短的漂移之後的位移可被利用以計算該小射束角度。將會體認到的是，此位移可被稱為在該系統中的射束診斷的一經校準的參考。 The terminal station 416 in the illustrated example is a "tandem" type terminal station that supports a single workpiece 430 along the beam path for implantation. A dose system 452 is included in the terminal station 416 near the workpiece for calibration measurement prior to the implantation operation. During calibration, the ion beam 424 passes through the dose system 452. The dose system 452 includes one or more analyzers 456 that can continuously traverse an analyzer path 458, thereby measuring the profile of the scanned beam. For example, the analyzer 456 may include a current density sensor, such as a Faraday cup, which measures the current density of the scanned beam, where the current density is the implantation angle (eg, between the beam and the workpiece) The relative orientation between the mechanical surfaces and/or the relative orientation between the beam and the lattice structure of the workpiece) is a function of. The current density sensor moves in a substantially orthogonal manner with respect to the scanned beam, and therefore generally traverses the width of the ribbon beam. In one example, the dose system measures both the beam density distribution and the angle distribution. The measurement of the beam angle can use a moving analyzer which senses the current after a mask with grooves as described in the literature. The displacement of each individual beamlet from the slot position after a short drift can be used to calculate the beamlet angle. It will be appreciated that this displacement can be referred to as a calibrated reference for beam diagnosis in the system.

該劑量系統452係可操作地耦接至一控制系統454，以從其 接收命令信號並且提供量測值至其。例如，可包括一電腦、微處理器、等等的控制系統454可以是可運作以從該劑量系統452取得量測值，並且計算該掃描的帶狀射束橫跨該工件的一平均角度分布。該控制系統454係同樣地在操作上耦接至離子束被產生所來自的終端412、以及該束線組件414的質量分析器426、掃描元件436(例如是經由電源供應器449)、聚焦及引導元件438(例如是經由電源供應器450)、平行化器439以及減速/加速級457。於是，這些元件的任一個都可藉由該控制系統454根據由該劑量系統452或是任何其它離子束量測或監視裝置所提供的值來加以調整，以使得所要的離子植入變得容易。控制信號亦可以經由被儲存在記憶體模組中的查找表而被產生，該查找表通常是根據透過實驗所收集的經驗數據而定的。 The dosage system 452 is operatively coupled to a control system 454 to Receive the command signal and provide the measured value to it. For example, a control system 454, which may include a computer, microprocessor, etc., may be operable to take measurements from the dose system 452 and calculate an average angular distribution of the scanned ribbon beam across the workpiece . The control system 454 is also operatively coupled to the terminal 412 from which the ion beam is generated, and the mass analyzer 426 of the beamline assembly 414, the scanning element 436 (eg, via the power supply 449), focusing and Guide element 438 (eg via power supply 450), parallelizer 439 and deceleration/acceleration stage 457. Thus, any of these elements can be adjusted by the control system 454 according to the values provided by the dose system 452 or any other ion beam measurement or monitoring device, so that the desired ion implantation becomes easier . The control signal can also be generated via a look-up table stored in the memory module, which is usually based on empirical data collected through experiments.

舉例而言，該離子束最初可以根據預設的射束調諧參數(例如，其被儲存/載入到該控制系統454中)來加以建立。接著，根據來自該劑量系統452的回授，例如該平行化器439可被調整以改變射束的能量位準，其可以藉由調整被施加至該離子抽取組件423以及減速級457中的電極的偏壓而適配於調整接面深度。相應地，例如是產生在該掃描器中的磁場或電場的強度及方位例如可藉由調節被施加至該些掃描電極的偏壓電壓來加以調整。植入的角度可以例如藉由調整被施加至該引導元件438或減速/加速級457的電壓而進一步加以控制。 For example, the ion beam may initially be established according to preset beam tuning parameters (eg, it is stored/loaded into the control system 454). Then, based on feedback from the dose system 452, for example, the parallelizer 439 can be adjusted to change the energy level of the beam, which can be applied to the ion extraction assembly 423 and the electrodes in the deceleration stage 457 by adjusting The bias voltage is adapted to adjust the junction depth. Accordingly, the intensity and orientation of the magnetic field or electric field generated in the scanner, for example, can be adjusted by adjusting the bias voltage applied to the scan electrodes. The angle of implantation can be further controlled, for example, by adjusting the voltage applied to the guide element 438 or deceleration/acceleration stage 457.

根據本揭露內容的一特點，控制系統454係被設置並且配置以在該工件430上建立一預設的掃描圖案，其中該工件係藉由該掃描系統435的控制而被曝露到該點狀離子束。例如，該控制系統454係被配置以控制該離子束的各種性質，例如是離子束的射束密度及電流、以及其它和該 離子束相關的性質，此明確地說為其能量。再者，該控制器454係被配置以控制該工件430的掃描速度。最重要的是，在用於一離子植入系統中提供一選擇性可變能量的離子束的本揭露內容的上下文中，該控制系統454係被配置以修改及調整被施加至該離子植入系統中的各種子系統的偏壓電壓。有關在上文敘述的範例的離子植入系統410，該控制系統係被配置以修改及改變被施加至該掃描器435的掃描電壓，並且進一步被配置以與該掃描電壓同步的修改及改變被施加至該減速/加速級457的偏壓電壓，以用於相應地調整該離子束的能量及偏轉。例如，該掃描電壓及偏壓電壓的此種修改是連續的(例如，非離散的)，因此其係提供優於已知的系統及方法的各種優點。 According to a feature of the disclosure, the control system 454 is set up and configured to create a predetermined scan pattern on the workpiece 430, wherein the workpiece is exposed to the spot ion by the control of the scanning system 435 bundle. For example, the control system 454 is configured to control various properties of the ion beam, such as the beam density and current of the ion beam, and others and the The properties related to the ion beam are clearly their energy. Furthermore, the controller 454 is configured to control the scanning speed of the workpiece 430. Most importantly, in the context of the present disclosure for providing a selective variable energy ion beam in an ion implantation system, the control system 454 is configured to modify and adjust the ion implantation applied to the ion implantation system The bias voltage of various subsystems in the system. With respect to the example ion implantation system 410 described above, the control system is configured to modify and change the scanning voltage applied to the scanner 435, and is further configured to modify and change in synchronization with the scanning voltage The bias voltage applied to the deceleration/acceleration stage 457 is used to adjust the energy and deflection of the ion beam accordingly. For example, this modification of the scan voltage and bias voltage is continuous (eg, non-discrete), so it provides various advantages over known systems and methods.

將會體認到的是，本揭露內容的提供一工件之選擇性控制的可變能量的離子植入之特定目的可被實施在此項技術中已知的其它離子植入系統架構中。例如，吾人可以利用一種所謂的帶狀射束架構來獲得類似於那些在上文敘述的選擇性控制的可變能量的離子植入結果，其中一具有跨越一晶圓的直徑之寬度的寬的離子束係被傳遞至一終端站，該終端站係在一維的掃描中將該晶圓移動通過該離子束。此種性質的一種普遍已知的離子植入系統是由瓦里安(Varian)半導體設備聯合公司以商品名稱VIISta HC製造及銷售的。同樣地，吾人可以利用一種所謂的二維的機械式掃描架構來獲得類似於那些在上文敘述的選擇性控制的可變能量的離子植入結果，其中一靜止的點狀離子束係被傳遞至一終端站，該終端站係在兩個維度上移動該晶圓通過該離子束。此種性質的一種普遍已知的離子植入系統是由艾克塞利斯技術公司以商品名稱Optima HD製造及銷售的。 It will be appreciated that the specific purpose of variable energy ion implantation that provides selective control of a workpiece of the present disclosure can be implemented in other ion implantation system architectures known in the art. For example, we can use a so-called ribbon beam architecture to obtain selectively controlled variable energy ion implantation results similar to those described above, one of which has a width that spans the diameter of a wafer. The ion beam system is transferred to a terminal station, which moves the wafer through the ion beam in a one-dimensional scan. A generally known ion implantation system of this nature is manufactured and sold by Varian Semiconductor Equipment Corporation under the trade name VIISta HC. Similarly, we can use a so-called two-dimensional mechanical scanning architecture to obtain ion implantation results similar to those of the selective control variable energy described above, in which a stationary spot ion beam system is delivered To a terminal station, the terminal station moves the wafer through the ion beam in two dimensions. A generally known ion implantation system of this nature is manufactured and sold by Excellis Technology under the trade name Optima HD.

為了在一種帶狀射束或是二維的機械式掃描架構中達成本揭露內容的所要的結果，該系統可以用一種類似於在美國專利4,929,840(該專利的整個內容係被納入在此作為參考)中敘述的解決方案之方式而被修改以納入晶圓旋轉控制，其中用於控制在一半導體晶圓中被植入的離子劑量之方法及裝置係被描述。在該專利中，該晶圓或工件係被設置在一平台上，該平台係在離散的步階中例如是藉由一步進馬達而被旋轉。在沿著一最初的路徑被掃描下，由該晶圓所累積的劑量係被量測。當該增量的量測到的劑量等於待被植入的總劑量除以該植入將被實行的一預設的步階數目時，該馬達係步進一增量。此過程係接著被重複，直到所要的總劑量達到為止。 In order to achieve the desired result of cost disclosure in a ribbon beam or two-dimensional mechanical scanning architecture, the system can be used in a manner similar to that in U.S. Patent 4,929,840 (the entire content of this patent is incorporated herein by reference ) Is modified to incorporate wafer rotation control, in which the method and apparatus for controlling the dose of ions implanted in a semiconductor wafer are described. In this patent, the wafer or workpiece is arranged on a platform which is rotated in discrete steps, for example by a stepping motor. After being scanned along an initial path, the dose accumulated by the wafer is measured. When the measured dose of the increment is equal to the total dose to be implanted divided by a preset number of steps in which the implantation is to be performed, the motor steps by an increment. This process is then repeated until the desired total dose is reached.

以一種類似的方式，該晶圓可以在一維或是二維的掃描路徑被傳輸通過一具有隨著該晶圓通過靜止的離子束時為可變的能量的離子束，例如是一隨著該晶圓從頂端至底部通過該射束路徑時而改變的能量。例如，該射束可以在該晶圓掃描的開始時，以一低能量來加以提供，並且隨著該晶圓的中心朝向該靜止的射束移動而且一初始的離子劑量被該晶圓所累積時而逐漸地(例如，持續地)增加。當該增量的量測到的劑量等於待被植入的總劑量除以該植入將被實行的一預設的步階數目時，該馬達係步進一增量。此過程係接著被重複，直到所要的總劑量達到為止。藉由對於每個步進的增量維持相同的可變能量輪廓，可以在該晶圓上達成一可變能量的離子植入。 In a similar manner, the wafer can be transported through a one-dimensional or two-dimensional scanning path through an ion beam having a variable energy as the wafer passes through a stationary ion beam, such as The energy that changes as the wafer passes the beam path from top to bottom. For example, the beam can be provided with a low energy at the beginning of the wafer scan, and as the center of the wafer moves toward the stationary beam and an initial ion dose is accumulated by the wafer Increasing from time to time (eg, continuously). When the measured dose of the increment is equal to the total dose to be implanted divided by a preset number of steps in which the implantation is to be performed, the motor steps by an increment. This process is then repeated until the desired total dose is reached. By maintaining the same variable energy profile for each step increment, a variable energy ion implant can be achieved on the wafer.

因此，在一帶狀射束或是二維的點狀射束中，以離散的步階經由例如是圖4的步進馬達470繞著一軸(其係與一垂直且交叉在該晶圓支撐件上的一晶圓的表面的軸一致)來旋轉該晶圓支撐件可被利用以選擇性地 改變該晶圓的離子植入的能量輪廓。例如，此種方法係包括一控制系統，其被配置以獲得劑量資訊信號，並且響應於該劑量資訊信號以發送信號來提供該支撐裝置的步進的旋轉。為了滿足以上的需求，該離子植入器例如是提供用於在植入期間或是在植入之間旋轉該晶圓之功能，並且在以上類型的離子植入系統架構中提供一用於控制晶圓的旋轉之系統。 Therefore, in a ribbon beam or a two-dimensional point beam, a discrete step is passed around a shaft (which is perpendicular to and intersecting on the wafer) via a stepping motor 470 such as FIG. 4. The axis of the surface of a wafer on the wafer coincides) to rotate the wafer support can be utilized to selectively Change the energy profile of ion implantation of the wafer. For example, such a method includes a control system configured to obtain a dose information signal, and in response to the dose information signal, send a signal to provide stepped rotation of the support device. In order to meet the above requirements, the ion implanter provides, for example, a function to rotate the wafer during implantation or between implantation, and provides a control for the above type of ion implantation system architecture. Wafer rotation system.

為了符合以上的目標，本揭露內容可包含一步進馬達470以繞著晶圓軸來旋轉該接收晶圓的平台、以及一用於控制該步進馬達的系統，藉此該晶圓係以一些可以是0到90度的數量級之離散的步階(或者是連續地)來加以旋轉。因此，藉由進行多次旋轉並且以該晶圓的緩慢的掃描方向的一函數來改變該能量，該能量可以從頂端邊緣到中心而回到底部邊緣來加以改變。在一例子中，將會瞭解到的是，該劑量將會以1/n增量來累積，其中n是離散的旋轉的數量。例如，每個步階係相關於藉由一法拉第杯所量測的射束電流來加以控制，以便於提供一為角旋轉的一函數之均勻的劑量分布。該旋轉驅動系統較佳的是包括一步進馬達，其可運作以繞著一垂直於晶圓表面並且通過其中心的軸來旋轉該平台組件。在操作上，所要的總劑量以及該平台組件之所要的旋轉數目係被輸入到一步進馬達控制器中，其中該所要的劑量係除以植入的步階的總數，以決定每個馬達步階待被植入的劑量。 In order to meet the above objectives, the present disclosure may include a stepping motor 470 to rotate the receiving wafer platform around the wafer axis, and a system for controlling the stepping motor, whereby the wafer is provided with some It can be rotated in discrete steps (or continuously) on the order of 0 to 90 degrees. Therefore, by performing multiple rotations and changing the energy as a function of the slow scanning direction of the wafer, the energy can be changed from the top edge to the center and back to the bottom edge. In one example, it will be understood that the dose will be accumulated in 1/n increments, where n is the number of discrete rotations. For example, each step is related to being controlled by the beam current measured by a Faraday cup so as to provide a uniform dose distribution as a function of angular rotation. The rotary drive system preferably includes a stepper motor operable to rotate the platform assembly about an axis perpendicular to the wafer surface and through its center. In operation, the required total dose and the required number of rotations of the platform assembly are entered into a stepper motor controller, where the required dose is divided by the total number of implanted steps to determine each motor step The dose to be implanted.

當該植入進行時，累積的離子劑量係由一法拉第杯來加以收集，其係提供一指出該累積的劑量之射束電流信號至該控制器。當該增量的累積的劑量等於每個步階之計算出的劑量時，一信號係被傳送至該步進馬達以旋轉該晶圓一步階。該植入是以此種方式進行，直到累積的劑量等 於所要的總劑量為止，在該時間點，該植入將會完成，並且該射束係藉由至一閘控制器的一信號而被閘控"關斷"。 As the implantation proceeds, the accumulated ion dose is collected by a Faraday cup, which provides a beam current signal to the controller indicating the accumulated dose. When the cumulative accumulated dose is equal to the calculated dose for each step, a signal is sent to the stepper motor to rotate the wafer one step. The implantation is performed in this way until the accumulated dose, etc. Up to the desired total dose, at this point in time, the implantation will be completed, and the beam will be gated "off" by a signal to a gate controller.

同樣將會理解到的是，本揭露內容可以和此項技術中已知的特點結合，以在離子植入期間提供甚至更大的離子植入製程的可變性。例如，如同先前所指出的，在有關於提供植入之可變的劑量控制的特徵之習知技術中有一些揭露內容。本揭露內容的用於提供一植入製程的選擇性可變能量控制的特徵可以和該些特徵結合，以用於提供一離子植入製程的選擇性可變的劑量控制，以達成橫跨該晶圓的表面之選擇性可變能量及劑量的離子植入。 It will also be understood that the present disclosure can be combined with features known in the art to provide even greater variability in the ion implantation process during ion implantation. For example, as previously indicated, there are some disclosures in the prior art regarding the features of providing variable dose control for implantation. The features of the present disclosure for providing selective variable energy control of an implantation process can be combined with these features for providing selective variable dose control of an ion implantation process to achieve cross-over Selective variable energy and dose ion implantation on the surface of the wafer.

根據本揭露內容，在此所述的系統係致能一種用於在變化的深度植入離子之方法，即如同在圖10的流程圖形式中所繪者。應注意到的是，儘管範例的方法在此係被描繪及敘述為一系列的動作或事件，但將會體認到的是，本揭露內容並不限於此種動作或事件之舉例說明的順序，因為根據本揭露內容，某些步驟可以用不同的順序且/或與除了在此所展示及敘述之外的其它步驟同時的發生。此外，並非所有說明的步驟都可能是實施根據本揭露內容的一種方法所需的。再者，將會體認到的是，該些方法可以相關在此描繪及敘述的系統以及相關其它未被描繪的系統來加以實施。 According to the present disclosure, the system described herein enables a method for implanting ions at varying depths, as depicted in the form of the flowchart of FIG. 10. It should be noted that although the example method is depicted and described here as a series of actions or events, it will be appreciated that the content of this disclosure is not limited to the order in which such actions or events are illustrated Because, according to the present disclosure, some steps may occur in a different order and/or simultaneously with other steps than those shown and described herein. Furthermore, not all illustrated steps may be required to implement a method according to the present disclosure. Furthermore, it will be appreciated that these methods can be implemented in relation to the systems depicted and described herein and other systems not depicted.

圖10的方法600係在動作602以在一支撐件上設置一工件來開始。在動作604中，一例如是點狀離子束的離子束係被提供，並且在動作606中，該離子束係被質量分析。在動作608中，該工件及離子束中的一或多個係相對彼此來加以掃描。例如，該工件係在動作608中，於兩個 正交的方向上被機械式掃描。在另一替代方案中，該離子束係在一第一方向上加以靜電或磁性式掃描，並且在一第二方向上加以機械式掃描。在又一替代方案中，該離子束係在兩個非平行的方向上加以靜電式掃描。 The method 600 of FIG. 10 begins at act 602 by placing a workpiece on a support. In act 604, an ion beam system such as a spot ion beam is provided, and in act 606, the ion beam system is mass analyzed. In act 608, one or more of the workpiece and the ion beam are scanned relative to each other. For example, the workpiece is in action 608 It is scanned mechanically in the orthogonal direction. In another alternative, the ion beam is electrostatically or magnetically scanned in a first direction and mechanically scanned in a second direction. In yet another alternative, the ion beam system is electrostatically scanned in two non-parallel directions.

在動作610中，該離子束的一能量係以一種連續的方式，和動作608的掃描同時的選擇性地加以改變。於是，離子植入到該工件中之一所產生的深度係沿著該工件的一表面而被改變。 In act 610, an energy system of the ion beam is selectively changed in a continuous manner simultaneously with the scan of act 608. Thus, the depth of ion implantation into one of the workpieces is changed along a surface of the workpiece.

因此，本揭露內容係針對於一種用於在離子束橫跨工件行進時改變離子束的能量、或者反之亦然之離子植入系統及方法。本揭露內容係藉由改變被施加至加速/減速電極的偏壓電壓而被致能，因而傳遞至一工件的離子能量可以選擇性地加以改變，以在該工件達成一預設的可變能量圖案。在一較佳實施例中，本揭露內容將會響應於一對映橫跨該工件並且對映成為矩陣之連續的函數以提供一連續可變能量的圖案，其可被利用以程式化該射束的能量為橫跨該工件的位置的一函數。例如，本揭露內容可以藉由在記憶體中產生一空間的映射來加以實行，其中該記憶體位置的每個胞係對應於相關在該工件上的一x及y位置之一獨特的能量。將會瞭解到的是，本揭露內容可被納入在一種用於提供具有一連續可變能量、在能量上的步階函數改變、或其它形式的可變能量植入之系統中。在橫跨工件的表面之能量輪廓上的改變可以是對稱的，並且亦可以是以象限或其它方式呈現，例如，在指定的位置Q1為X1能量、在Q2中為X2能量、依此類推。 Therefore, the present disclosure is directed to an ion implantation system and method for changing the energy of an ion beam as it travels across a workpiece, or vice versa. The content of this disclosure is enabled by changing the bias voltage applied to the acceleration/deceleration electrode, so that the ion energy transferred to a workpiece can be selectively changed to achieve a predetermined variable energy in the workpiece pattern. In a preferred embodiment, the present disclosure will respond to a pair of mappings across the workpiece and the mapping becomes a continuous function of the matrix to provide a continuously variable energy pattern that can be used to program the radiation The energy of the beam is a function of the position across the workpiece. For example, the present disclosure can be implemented by generating a spatial mapping in memory, where each cell of the memory location corresponds to a unique energy associated with one of the x and y locations on the workpiece. It will be appreciated that the present disclosure can be incorporated into a system for providing a continuously variable energy, a step function change in energy, or other forms of variable energy implantation. The change in the energy profile across the surface of the workpiece may be symmetrical, and may also be presented in quadrants or other ways, for example, X 1 energy at a designated position Q 1 , X 2 energy at Q 2 , So on and so forth.

為了舉例之目的而在此敘述的範例的離子植入系統架構係特別適合於致能在橫跨一工件的表面的離子束能量上之選擇性的改變，其中圖4的系統410係納入一掃描的點狀射束，其中該射束係電子或磁性式掃 描橫跨該工件的表面。一點狀射束的此種掃描係容許該離子束能量隨著該射束掃描之選擇性的改變的調變。因此，當該射束掃描以撞擊在晶圓上之所選的位置時，其係通過該束線的所有光學元件，其中該射束可以在撞擊該晶圓之前，被修改以改變其能量成為一所選的能量。有利的是，在該射束能量上的改變可以和該掃描器及/或終端站的x及y掃描函數同步地加以達成，使得該掃描的射束的能量可以用x及y的一函數來加以改變。此外，被施加至該減速/加速以及其偏轉能量過濾器特徵的偏壓電壓可以選擇性以該掃描的射束的x及y位置的一函數來改變，使得該射束可被限制於在相同的路徑上行進至該晶圓，而與該離子束的能量改變無關。 The example ion implantation system architecture described herein for illustrative purposes is particularly suitable for enabling selective changes in ion beam energy across the surface of a workpiece, where the system 410 of FIG. 4 incorporates a scan Point beam, where the beam is electronic or magnetic Trace across the surface of the workpiece. Such scanning of a one-point beam allows modulation of the energy of the ion beam as the selectivity of the scanning of the beam changes. Therefore, when the beam is scanned to strike a selected position on the wafer, it passes through all the optical elements of the beam line, where the beam can be modified to change its energy before hitting the wafer One selected energy. Advantageously, the change in the beam energy can be achieved synchronously with the x and y scanning functions of the scanner and/or terminal station, so that the energy of the scanned beam can be used as a function of x and y To change. In addition, the bias voltage applied to the deceleration/acceleration and its deflection energy filter characteristics can be selectively changed as a function of the x and y positions of the scanned beam, so that the beam can be limited to the same Path travels to the wafer regardless of the energy change of the ion beam.

將會瞭解到的是，構件及子系統的所有選擇性的偏壓都可以經由控制系統454而被達成，並且可以根據從該掃描系統輸出的射束位置，經由一回授迴路輸入至該加速/減速級以及該能量過濾器而被實施。然而，將會理解到的是，一回授迴路並不是用於致能本揭露內容的選擇性地可變能量的離子植入特徵之一要件，因為預先程式化的離子束能量輪廓亦可以有利地被實施以執行本揭露內容的選擇性地可變能量的離子植入。就此而論，離子束能量可以經由一針對於該射束在該晶圓上的x，y座標位置的回授迴路、或是經由某個預設的所要的圖案，依每個晶粒、或是某個其它特徵或區域來選擇性地加以改變。 It will be appreciated that all selective biases of components and subsystems can be achieved via the control system 454 and can be input to the acceleration via a feedback loop based on the beam position output from the scanning system / Deceleration stage and this energy filter are implemented. However, it will be understood that a feedback loop is not one of the requirements for the selectively variable energy ion implantation feature used to enable this disclosure, as a pre-programmed ion beam energy profile can also be beneficial Is implemented to perform the selective variable energy ion implantation of the present disclosure. In this connection, the energy of the ion beam can be through a feedback loop for the x,y coordinate position of the beam on the wafer, or through a predetermined desired pattern, per die, or It is some other feature or area to be selectively changed.

本揭露內容的選擇性地可變能量的離子植入亦可以透過該工件的一映射來加以實施，其中分別被供應至該電極柱及/或能量過濾器的電極中的一或多個之一或多個電壓的選擇性的改變係根據設置在該工件支撐件上的一工件的一映射而定。在另一替代方案中，本揭露內容的離子植 入系統可被設置有一偵測器或是多個偵測器，其被配置以偵測設置在該工件支撐件上的一工件的一或多個性質，其中分別被供應至該減速/加速級的電極柱及/或該能量過濾器中的一或多個之一或多個電壓的選擇性的改變係進一步根據來自該偵測器的回授而定。根據此替代實施例，該一或多個偵測器較佳的是可被配置以偵測該工件的一厚度、一被設置在該工件上的層的一厚度、一在該工件上的晶粒圖案、該工件的一邊緣、該工件的一中心、或是在該工件上的一預先定義的區域中的一或多個，其中偵測到的資訊係被提供作為輸入，以選擇性地改變該離子束的能量。 The selectively variable energy ion implantation of the present disclosure can also be implemented through a mapping of the workpiece, which is supplied to one of one or more of the electrodes of the electrode column and/or the energy filter, respectively The selective change of the voltage or voltages depends on a mapping of a workpiece provided on the workpiece support. In another alternative, the ion implant of the present disclosure The entry system may be provided with a detector or a plurality of detectors, which are configured to detect one or more properties of a workpiece provided on the workpiece support, which are respectively supplied to the deceleration/acceleration stage The selective change of one or more voltages of the electrode column and/or one or more of the energy filters is further determined based on the feedback from the detector. According to this alternative embodiment, the one or more detectors may preferably be configured to detect a thickness of the workpiece, a thickness of a layer disposed on the workpiece, and a crystal on the workpiece One or more of a grain pattern, an edge of the workpiece, a center of the workpiece, or a predefined area on the workpiece, where the detected information is provided as input to selectively Change the energy of the ion beam.

儘管本發明已經相關一或多個實施方式來加以描繪及敘述，但將會瞭解到的是，可以對於該些舉例說明的例子做成改變及/或修改，而不脫離所附的申請專利範圍的精神及範疇。尤其是有關於藉由上述的構件或結構(區塊、單元、引擎、組件、裝置、電路、系統、等等)所執行的各種功能，除非另有指出，否則被用來描述此種構件的該些術語(包含任何對於"裝置"的參照)係欲對應到任何執行所敘述的構件之指明的功能的構件或結構(例如，其係在功能上等同的)，即使其在結構上並不等同於在本發明於此說明的範例實施方式中所揭露的執行該功能的結構。此外，儘管本發明之一特定的特點可能已經只相關數個實施方式中的一個而被揭露，但是只要對於任何給定或特定的應用而言可能是所要的而且是有利的，則此種特點都可以和其它實施方式的一或多個其它特點結合。再者，在該些術語"包含"、"具有"、"帶有"、或是其變化型被使用在該詳細說明以及申請專利範圍中的範疇下，此種術語係欲以一種類似於該術語"包括"的方式而為包括性質的。 Although the present invention has been described and described in relation to one or more embodiments, it will be understood that changes and/or modifications can be made to the illustrated examples without departing from the scope of the attached patent application Spirit and scope. In particular, the various functions performed by the above-mentioned components or structures (blocks, units, engines, components, devices, circuits, systems, etc.) are used to describe such components unless otherwise indicated These terms (including any reference to "device") are intended to correspond to any component or structure that performs the specified function of the described component (eg, it is functionally equivalent), even if it is not structurally equivalent It is equivalent to the structure disclosed in the exemplary embodiment of the present invention described herein to perform the function. In addition, although a particular feature of the present invention may have been disclosed in relation to only one of the several embodiments, such feature is as long as it may be desired and advantageous for any given or specific application Both can be combined with one or more other features of other embodiments. Furthermore, under the scope that the terms "including", "having", "with", or variations thereof are used in the detailed description and patent application, such terms are intended to be similar to the The term "comprising" is inclusive.

410‧‧‧離子植入系統 410‧‧‧Ion implantation system

412‧‧‧終端 412‧‧‧Terminal

414‧‧‧束線組件 414‧‧‧Bundle assembly

416‧‧‧終端站 416‧‧‧Terminal

418‧‧‧狹縫 418‧‧‧ slit

420‧‧‧離子源 420‧‧‧Ion source

421‧‧‧產生室 421‧‧‧ Production room

422‧‧‧電源供應器 422‧‧‧Power supply

423‧‧‧離子抽取組件 423‧‧‧Ion extraction module

424‧‧‧離子束 424‧‧‧Ion beam

424a‧‧‧小射束 424a‧‧‧small beam

425a、425b‧‧‧電極 425a、425b‧‧‧electrode

426‧‧‧質量分析器 426‧‧‧Quality Analyzer

427‧‧‧側壁 427‧‧‧Sidewall

430‧‧‧工件 430‧‧‧Workpiece

432‧‧‧束導 432‧‧‧beam guide

434‧‧‧解析孔 434‧‧‧Analysis hole

435‧‧‧掃描系統 435‧‧‧ Scanning system

436‧‧‧掃描元件 436‧‧‧scanning element

436a、436b‧‧‧電極 436a、436b‧‧‧electrode

437‧‧‧行進的距離 437‧‧‧ distance traveled

438‧‧‧聚焦/引導元件/平行化器 438‧‧‧focus/guide element/parallelizer

438a、438b‧‧‧電極 438a, 438b ‧‧‧ electrode

439‧‧‧平行化器 439‧‧‧Parallelizer

439a、439b‧‧‧雙極磁鐵 439a, 439b ‧‧‧ bipolar magnet

441‧‧‧掃描頂點 441‧‧‧ scanning vertex

449‧‧‧電源供應器 449‧‧‧Power supply

450‧‧‧電源供應器 450‧‧‧Power supply

452‧‧‧劑量系統 452‧‧‧Dose system

454‧‧‧控制系統 454‧‧‧Control system

456‧‧‧分析器 456‧‧‧Analyzer

457‧‧‧加速或減速/過濾子系統 457‧‧‧Acceleration or deceleration/filtration subsystem

457a、457b‧‧‧電極 457a、457b‧‧‧electrode

458‧‧‧分析器路徑 458‧‧‧Analyzer path

470‧‧‧步進馬達 470‧‧‧stepping motor

Claims (24)

一種被配置以提供一選擇性地可變能量的離子束至一工件之離子植入系統，其係包括：一離子源，其被配置以離子化一摻雜物材料以用於產生一離子束；一被設置在該離子源的下游的質量分析器，其被配置以提供一經質量分析的離子束；一被設置在該質量分析器的下游的減速/加速級，其被配置以接收該經質量分析的離子束以產生該選擇性地可變能量的離子束；一被設置該減速/加速級的下游的終端站，其中該終端站係包含一工件支撐件，該工件支撐件被配置以選擇性地設置該工件在該選擇性地可變能量的離子束的前面，以用於藉此的離子植入；一掃描裝置，其被配置以相對於彼此掃描該離子束以及工件支撐件中的其中一或多個；一或多個電源，其可操作地耦接至該離子源、質量分析器以及減速/加速級中的其中一或多個；以及一控制系統，其耦接至該一或多個電源並且被配置以和該離子束及/或工件支撐件的掃描同時的選擇性地改變至少一被供應至該減速/加速級的偏壓電壓，其中該至少一被供應至該減速/加速級的偏壓電壓的選擇性的改變係至少部分根據該離子束相對該工件的一位置而定，以提供一選擇性地可變能量的離子束至該工件。 An ion implantation system configured to provide a selectively variable energy ion beam to a workpiece includes: an ion source configured to ionize a dopant material for generating an ion beam A mass analyzer disposed downstream of the ion source, which is configured to provide a mass analyzed ion beam; a deceleration/acceleration stage disposed downstream of the mass analyzer, which is configured to receive the Mass-analyze the ion beam to generate the selectively variable energy ion beam; a terminal station downstream of the deceleration/acceleration stage, wherein the terminal station includes a workpiece support, the workpiece support is configured to Selectively placing the workpiece in front of the selectively variable energy ion beam for ion implantation thereby; a scanning device configured to scan the ion beam and the workpiece support relative to each other One or more of; one or more power supplies operably coupled to one or more of the ion source, mass analyzer, and deceleration/acceleration stage; and a control system coupled to the One or more power sources and configured to selectively change at least one bias voltage supplied to the deceleration/acceleration stage simultaneously with the scanning of the ion beam and/or workpiece support, wherein the at least one is supplied to the The selective change of the bias voltage of the deceleration/acceleration stage is based at least in part on a position of the ion beam relative to the workpiece to provide a selectively variable energy ion beam to the workpiece. 如申請專利範圍第1項之離子植入系統，其進一步包括：一能量過濾器，其用於偏轉具有一所要的能量的離子，以界定一具有 一所要的能量之離子束以被傳遞至該終端站；其中該控制系統係進一步被配置以和該離子束及/或工件支撐件的掃描同時的選擇性地改變一或多個分別被供應至該能量過濾器的電壓，使得該一或多個電壓的選擇性的改變是至少部分根據該離子束的能量而定。 For example, the ion implantation system of patent application scope item 1, which further includes: an energy filter for deflecting ions with a desired energy to define a An ion beam of desired energy is delivered to the terminal station; wherein the control system is further configured to selectively change one or more of the ion beam and/or the workpiece support simultaneously while scanning one or more of them to be supplied to The voltage of the energy filter is such that the selective change of the one or more voltages depends at least in part on the energy of the ion beam. 如申請專利範圍第1項之離子植入系統，其中該至少一偏壓電壓的選擇性的改變係和該離子束及/或工件支撐件的掃描同步的選擇性地改變被導引朝向被設置在該工件支撐件上的該工件的該離子束的一能量。 An ion implantation system as claimed in item 1 of the patent application, wherein the selective change of the at least one bias voltage is synchronized with the selective scanning of the ion beam and/or the workpiece support being guided to be set An energy of the ion beam of the workpiece on the workpiece support. 如申請專利範圍第3項之離子植入系統，其中該至少一偏壓電壓的選擇性的改變係根據該離子束沿著一掃描路徑的一位置而定。 For example, in the ion implantation system of claim 3, the selective change of the at least one bias voltage depends on a position of the ion beam along a scanning path. 如申請專利範圍第3項之離子植入系統，其中該至少一偏壓電壓的選擇性的改變係進一步根據由一操作者以及該工件的一描述中其中一者所提供的一或多個預設的特徵而定。 An ion implantation system as claimed in item 3 of the patent application, wherein the selective change of the at least one bias voltage is further based on one or more pre-provisions provided by an operator and one of a description of the workpiece Set characteristics. 如申請專利範圍第1項之離子植入系統，其中該掃描裝置係包括一靜電式及/或磁性式掃描器，其被配置以沿著至少一第一掃描軸分別靜電式及/或磁性式掃描該離子束。 An ion implantation system as claimed in item 1 of the patent application, wherein the scanning device includes an electrostatic and/or magnetic scanner configured to be electrostatically and/or magnetically respectively along at least a first scanning axis Scan the ion beam. 如申請專利範圍第6項之離子植入系統，其中該掃描裝置進一步包括一機械式掃描系統，其被配置以沿著一非平行於該第一掃描軸的第二掃描軸機械式掃描該工件支撐件。 An ion implantation system as claimed in claim 6, wherein the scanning device further includes a mechanical scanning system configured to mechanically scan the workpiece along a second scanning axis that is not parallel to the first scanning axis supporting item. 如申請專利範圍第7項之離子植入系統，其中該第一掃描軸係正交於該第二掃描軸。 For example, in the ion implantation system of claim 7, the first scanning axis is orthogonal to the second scanning axis. 如申請專利範圍第1項之離子植入系統，其中該掃描裝置係包括一機械式掃描系統，其被配置以沿著一第一掃描軸以及一實質正交於該第一掃 描軸的第二掃描軸兩者機械式掃描該工件支撐件。 An ion implantation system as claimed in item 1 of the patent application, wherein the scanning device includes a mechanical scanning system configured to be along a first scanning axis and a substantially orthogonal to the first scanning Both the second scanning axis of the scanning axis mechanically scans the workpiece support. 如申請專利範圍第1項之離子植入系統，其中該一或多個分別被供應至該減速/加速級的電壓的選擇性的改變係根據來自該掃描系統的指出該離子束相對該工件的位置之回授而定。 As in the ion implantation system of claim 1, the selective change of the one or more voltages respectively supplied to the deceleration/acceleration stage is based on the indication from the scanning system of the ion beam relative to the workpiece The location depends on the feedback. 如申請專利範圍第2項之離子植入系統，其中該一或多個分別被供應至該能量過濾器的電壓的選擇性的改變係根據來自該掃描系統的指出該離子束相對該工件的位置之回授而定。 An ion implantation system as claimed in item 2 of the patent application, wherein the selective change of the one or more voltages respectively supplied to the energy filter is based on the position from the scanning system indicating the position of the ion beam relative to the workpiece It depends on the feedback. 如申請專利範圍第1項之離子植入系統，其中該至少一分別被供應至該減速/加速級的偏壓電壓的選擇性的改變是預設的。 As in the ion implantation system of claim 1, the selective change of the at least one bias voltage respectively supplied to the deceleration/acceleration stage is preset. 如申請專利範圍第2項之離子植入系統，其中該一或多個分別被供應至該能量過濾器的電壓的選擇性的改變是預設的。 As in the ion implantation system of claim 2, the selective change of the one or more voltages respectively supplied to the energy filter is preset. 如申請專利範圍第1項之離子植入系統，其中該一或多個分別被供應至該減速/加速級以及該能量過濾器中的一或多個的電壓的選擇性的改變係根據一被設置在該工件支撐件上的工件的一映射而定。 An ion implantation system as claimed in item 1 of the patent application, wherein the selective change of the voltages supplied to the one or more of the deceleration/acceleration stage and the energy filter is based on a The mapping of the workpieces set on the workpiece support depends on the mapping. 如申請專利範圍第14項之離子植入系統，其中該工件的該映射係包括一材料層厚度橫跨該工件的一表面的一映射。 An ion implantation system as claimed in item 14 of the patent application, wherein the mapping of the workpiece includes a mapping of a material layer thickness across a surface of the workpiece. 如申請專利範圍第1項之離子植入系統，其中該一或多個被供應至該減速/加速級以及該能量過濾器的電壓的選擇性的改變係進一步至少部分根據一或多個和一被設置在該工件支撐件上的工件相關的特徵的一位置而定。 An ion implantation system as claimed in item 1 of the patent application, wherein the selective change of the one or more voltages supplied to the deceleration/acceleration stage and the energy filter is further based at least in part on one or more and one The position of the workpiece-related features provided on the workpiece support. 如申請專利範圍第15項之離子植入系統，其中該一或多個特徵係包括一被形成在該工件上的層、一在該工件上的晶粒圖案、該工件的一邊緣、 該工件的一中心、以及在該工件上的一預先定義的區域中的其中一或多個。 For example, the ion implantation system of claim 15, wherein the one or more features include a layer formed on the workpiece, a grain pattern on the workpiece, an edge of the workpiece, One or more of a center of the workpiece and a predefined area on the workpiece. 如申請專利範圍第1項之離子植入系統，其中該減速/加速級係包括一離子束加速器以及一離子束減速器中的其中一或多個。 For example, the ion implantation system of claim 1, wherein the deceleration/acceleration stage includes one or more of an ion beam accelerator and an ion beam reducer. 如申請專利範圍第1項之離子植入系統，其進一步包括一偵測器，該偵測器被配置以偵測一被設置在該工件支撐件上的工件的一或多個性質，並且其中該一或多個分別被供應至該減速/加速級以及該能量過濾器中的一或多個的電壓的選擇性的改變係進一步根據來自該偵測器的回授而定。 The ion implantation system as claimed in item 1 of the patent application further includes a detector configured to detect one or more properties of a workpiece disposed on the workpiece support, and wherein The selective change of the one or more voltages supplied to the deceleration/acceleration stage and one or more of the energy filters, respectively, is further dependent on the feedback from the detector. 如申請專利範圍第19項之離子植入系統，其中該偵測器係被配置以偵測該工件的一厚度、一被設置在該工件上的層的一厚度、一在該工件上的晶粒圖案、該工件的一邊緣、該工件的一中心、以及在該工件上的一預先定義的區域中的其中一或多個。 An ion implantation system as claimed in claim 19, wherein the detector is configured to detect a thickness of the workpiece, a thickness of a layer disposed on the workpiece, and a crystal on the workpiece One or more of a grain pattern, an edge of the workpiece, a center of the workpiece, and a predefined area on the workpiece. 如申請專利範圍第1項之離子植入系統，其中該工件支撐件係包含：一馬達，其被配置以離散的步階繞著一軸來旋轉該支撐件，該軸係與一垂直於且交叉在該工件支撐件上所收容的該工件的表面的軸一致，其中該控制系統係被配置以控制該馬達；以及一用於量測被植入在該工件中的離子的一劑量之劑量量測裝置，其中該控制系統係可操作以從該劑量量測裝置接收劑量資訊信號，並且發送控制信號至該馬達以用於進一步提供該工件支撐件的步階的旋轉。 An ion implantation system as claimed in item 1 of the patent application, wherein the workpiece support includes: a motor configured to rotate the support around an axis in discrete steps, the axis being perpendicular to and intersecting with an axis The axis of the surface of the workpiece accommodated on the workpiece support is consistent, wherein the control system is configured to control the motor; and a dose amount for measuring a dose of ions implanted in the workpiece Measuring device, wherein the control system is operable to receive a dose information signal from the dose measuring device and send a control signal to the motor for further providing step rotation of the workpiece support. 如申請專利範圍第21項之離子植入系統，其中該馬達係包括一步進馬達。 For example, the ion implantation system of claim 21, wherein the motor includes a stepping motor. 如申請專利範圍第1項之離子植入系統，其中該至少一被供應至該 減速/加速級的偏壓電壓的選擇性的改變是反復的，因此界定一種鏈植入，並且進一步至少部分根據由一操作者以及該工件的一描述中之其中一者所提供的一或多個預設的特徵而定。 As for the ion implantation system of claim 1, the at least one of which is supplied to the The selective change of the bias voltage of the deceleration/acceleration stage is iterative, thus defining a chain implant, and further based at least in part on one or more provided by an operator and one of a description of the workpiece Depending on a preset feature. 如申請專利範圍第1項之離子植入系統，其中該至少一被供應至該減速/加速級的偏壓電壓的選擇性的改變大致是連續的。 As in the ion implantation system of claim 1, the selective change of the at least one bias voltage supplied to the deceleration/acceleration stage is substantially continuous.
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